WO2017128457A1 - 量子点发光器件及其制备方法及液晶显示装置 - Google Patents

量子点发光器件及其制备方法及液晶显示装置 Download PDF

Info

Publication number
WO2017128457A1
WO2017128457A1 PCT/CN2016/074065 CN2016074065W WO2017128457A1 WO 2017128457 A1 WO2017128457 A1 WO 2017128457A1 CN 2016074065 W CN2016074065 W CN 2016074065W WO 2017128457 A1 WO2017128457 A1 WO 2017128457A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
layer
hole
dot light
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/074065
Other languages
English (en)
French (fr)
Inventor
徐超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/033,623 priority Critical patent/US10050220B2/en
Publication of WO2017128457A1 publication Critical patent/WO2017128457A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers

Definitions

  • the present invention claims the priority of the prior art application entitled “Quantum Dots Light-Emitting Device and Its Preparation Method and Liquid Crystal Display Device", which is filed on January 25, 2016, the content of which is incorporated herein by reference. Into this text.
  • the present invention relates to the field of display, and in particular to a quantum dot light emitting device, a method for fabricating the same, and a liquid crystal display device.
  • Quantum dot light-emitting devices such as Quantum dot light emitting diodes (QLEDs) are known as organic light-emitting devices because of their wide color gamut, high color purity, good stability, low power consumption, and low cost. A new generation of lighting devices.
  • the quantum dot light emitting diode includes a quantum dot light emitting layer, a hole transport layer, and an electron transport layer.
  • the electron transport layer, the quantum dot light-emitting layer, and the hole transport layer are stacked in this order.
  • the electron transport layer, the quantum dot light-emitting layer, and the hole transport layer are usually dissolved in an organic solvent by a corresponding material, and then separately formed into a film by spin coating.
  • the electron transport layer, the quantum dot light-emitting layer, and the hole transport layer are prepared in three layers. Typically, one layer is prepared first, followed by another layer. Since the organic solvent is used in the film formation, in the preparation process of the quantum dot light-emitting diode, the film layer being fabricated may cause damage to the adjacent film layer which has been fabricated, thereby causing the luminous efficiency of the quantum dot light-emitting diode. Reduce and reduce the success rate of preparation.
  • the present invention provides a quantum dot light emitting device comprising a substrate, an anode, a hole injecting and hole transporting layer, a quantum dot emitting layer, an electron injecting and electron transporting layer, and a cathode, the anode being disposed in the On the substrate, the anode and the cathode are disposed on the same side of the substrate, and the anode and the cathode are opposite and spaced apart, the hole injection and hole transport layer, the quantum dot light emitting layer And the electron injecting and electron transporting layer is interposed between the anode and the cathode, the hole One side of the implantation and hole transport layer is connected to the anode, and the quantum dot light-emitting layer and the electron injecting and electron transporting layer are sequentially stacked on one side of the hole injecting and hole transporting layer away from the anode.
  • the electron injection and electron transport layer is connected to the cathode away from a side of the quantum dot light-emitting layer, the anode is for providing holes, and the cathode is for supplying electrons, the hole injection and the hole transport a layer for transporting the holes to the quantum dot luminescent layer, the electron injecting and electron transporting layer for transporting the electrons to the quantum dot luminescent layer, the holes and the electrons being
  • the quantum dot luminescent layer is compounded to emit light, wherein the electron injecting and electron transporting layer comprises a water alcohol soluble conjugated polymer.
  • the water-soluble conjugated polymer includes any one or more of PFN, PFNBr, and PFNSO.
  • the anode comprises indium tin oxide.
  • the hole injection and hole transport layer comprises PEDOT:PSS or P-type metal oxide nanoparticles, wherein the P-type metal oxide nanoparticles comprise any one or more of MoO3, NiO, V2O5 and WoO3. Kind.
  • the hole injection and hole transport layers have a thickness of 10 to 15 nm.
  • the quantum dot light-emitting layer has a thickness of 30 to 40 nm.
  • the quantum dot light emitting layer comprises a single layer or a plurality of quantum dots.
  • the cathode comprises aluminum, and the cathode has a thickness of 100 to 150 nm.
  • the invention also provides a method for preparing a quantum dot light emitting device, and the method for preparing the quantum dot light emitting device comprises:
  • an electron injecting and electron transporting material to the surface of the quantum dot emitting layer away from the hole injecting and hole transporting layer to form an electron injecting and electron transporting layer, wherein the electron injecting and electron transporting layer comprises hydroalcohol Soluble conjugated polymer;
  • a metal is deposited on the surface of the electron injecting and electron transporting layer away from the quantum dot emitting layer to form a cathode.
  • the present invention also provides a liquid crystal display device comprising the quantum dot light-emitting device according to any of the above embodiments.
  • the electron injecting and electron transporting layer of the quantum dot light-emitting device of the present invention comprises a hydroalcoholic conjugated polymer which can be dissolved in a solvent having a relatively high polarity, such as water, formaldehyde or the like. It is possible to prevent the electron injecting and electron transporting layer from being damaged when the film is formed into a film, and therefore, the performance of the quantum dot light emitting device can be improved. Further, the water-soluble conjugated polymer is non-toxic, has no pollution to the environment during the production process, and is environmentally friendly.
  • FIG. 1 is a schematic structural view of a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • FIG. 2 is a flow chart of a method of fabricating a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a liquid crystal display device according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • the quantum dot light emitting device 100 includes a substrate 110, an anode 120, a hole injecting and hole transporting layer 130, a quantum dot light emitting layer 140, an electron injecting and electron transporting layer 150, and a cathode 160.
  • the anode 120 is disposed on the substrate 110, the anode 120 and the cathode 160 are disposed on the same side of the substrate 110, and the anodes 120 are disposed opposite to each other.
  • the hole injecting and hole transporting layer 130, The quantum dot light emitting layer 140 and the electron injecting and electron transporting layer 150 are interposed between the anode 120 and the cathode 160, and one side of the hole injecting and hole transporting layer 130 and the anode 120 Connected, the quantum dot light emitting layer 140 and the electron injecting and electron transporting layer 150 are sequentially stacked on one side of the hole injecting and hole transporting layer 150 away from the anode 120, and the electron injecting and electron transporting A layer 150 is connected to the cathode 160 away from a side of the quantum dot light-emitting layer 140.
  • the anode 120 is for providing holes
  • the cathode 160 is for supplying electrons
  • the hole injection and hole transport layer 130 is for transporting the holes to the quantum dot light-emitting layer 140
  • An implantation and electron transport layer 150 is used to transport the electrons to the quantum dot light-emitting layer 140, and the holes and the electrons are combined in the quantum dot light-emitting layer 140 to emit light
  • the electron injection and The electron transport layer 150 includes a water alcohol soluble conjugated polymer.
  • the water-soluble conjugated polymers consist of a conjugated backbone and contain strong polar groups (eg, amine groups, diethanolamine groups, phosphate groups, carboxyl groups, quaternary ammonium salts, carboxylates, sulfonates, zwitterions).
  • the hydroalcoholic conjugated polymer includes any one or more of PFN, PFNBr, and PFNSO.
  • the water-soluble conjugated polymer can be dissolved in a solvent having a relatively high polarity, such as water, formaldehyde, or the like, as a material of the electron injecting and electron transporting layer.
  • the destruction of the quantum dot light-emitting layer 140 at the time of preparation of the electron injecting and electron transporting layer 150 can be avoided, and therefore, the performance of the quantum dot light emitting device 100 can be improved.
  • the water-soluble conjugated polymer is non-toxic, has no pollution to the environment during the production process, and is environmentally friendly.
  • the substrate 110 is a transparent substrate, and the substrate 110 may be, but not limited to, a glass, a plastic substrate, or the like.
  • the anode 120 includes indium tin oxide (ITO), and the cathode 160 is a metal such as aluminum.
  • ITO indium tin oxide
  • the anode 120 is disposed on a surface of the substrate 110.
  • the hole injecting and hole transporting layer 130 includes poly(3,4-ethylenedioxythiophene: poly styrenesulfonate, PEDOT:PSS) or a P-type metal. Oxide nanoparticles.
  • the P-type metal oxide nanoparticles include any one or more of MoO3, NiO, V2O5, and WoO3.
  • the hole injection and hole transport layer 130 has a thickness of 10 to 15 nm.
  • the quantum dot light-emitting layer 140 has a thickness of 30 to 40 nm.
  • the quantum dot light emitting layer 140 includes a single layer or a plurality of quantum dots.
  • the electron injecting and electron transporting layer 150 may have a thickness of 5 to 10 nm.
  • the electron injecting and electron transporting layer 150 in the quantum dot light emitting device 100 of the present invention comprises a water alcohol soluble conjugated polymer which can be dissolved in a solvent having a relatively high polarity, such as water, formaldehyde or the like.
  • a solvent having a relatively high polarity such as water, formaldehyde or the like.
  • the destruction of the quantum dot light-emitting layer 140 when the electron injecting and electron transporting layer 150 is formed into a film can be prevented, and therefore, the performance of the quantum dot light emitting device 100 can be improved.
  • the water-soluble conjugated polymer is non-toxic, has no pollution to the environment during the production process, and is environmentally friendly.
  • FIG. 2 is a flow chart of a method for fabricating a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • the method of preparing the quantum dot light emitting device includes, but is not limited to, the following steps.
  • step S110 the substrate 110 is provided.
  • step S120 an anode 120 is formed on the surface of the substrate 110.
  • a hole injecting and hole transporting material is coated on the surface of the anode 120 away from the substrate 110 to form a hole injecting and hole transporting layer 130.
  • the hole injecting and hole transporting layer 130 may be formed by applying a hole injecting and hole transporting material to a surface of the anode 120 away from the substrate 110 by spin coating or the like to form the hole Hole injection and hole transport layer 130.
  • Step S140 coating a quantum dot luminescent material on the surface of the hole injection and hole transport layer 130 away from the anode 120 to form a quantum dot luminescent layer 140.
  • the quantum dot light-emitting layer 140 may be formed by coating a quantum dot luminescent material on a surface of the hole injection and hole transport layer 130 away from the anode 120 by spin coating or the like to form the quantum.
  • the light emitting layer 140 is spotted.
  • Step S150 coating an electron injection and electron transport material on the surface of the quantum dot light-emitting layer 140 away from the hole injection and hole transport layer 130 to form an electron injection and electron transport layer 150, wherein the electron injection and The electron transport layer 150 includes a water alcohol soluble conjugated polymer.
  • the electron injecting and electron transporting layer 150 may be formed by applying electron injection and electron transport to the surface of the quantum dot light emitting layer 140 away from the hole injecting and hole generating layer 130 by spin coating or the like. Materials are formed to form the electron injecting and electron transporting layer 150.
  • Step S160 depositing a metal on the surface of the electron injecting and electron transporting layer 150 away from the quantum dot emitting layer 140 to form a cathode 160.
  • the method for preparing the cathode 160 can be shaped as follows Forming: a metal such as aluminum is formed on the surface of the electron injecting and electron transporting layer 150 away from the quantum dot emitting layer 140 by evaporation or the like to prepare the cathode 160.
  • the cathode 160 has a thickness of 100 nm to 150 nm.
  • the present invention also provides a liquid crystal display device 10.
  • the liquid crystal display device 10 includes the quantum dot light emitting device 100 described above, and details are not described herein again.
  • the liquid crystal display device 10 may include, but is not limited to, a smart phone, a mobile device (MID), an e-book, a Play Station Portable (PSP), or a personal digital assistant (PDA).
  • the portable electronic device can also be a display or the like.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种量子点发光器件及其制备方法及液晶显示装置。量子点发光器件包括基板(110)、阳极(120)、空穴注入和空穴传输层(130)、量子点发光层(140)、电子注入和电子传输层(150)及阴极(160)，阳极(120)设置在基板(110)上，阳极(120)与阴极(160)设置在基板(110)的同侧，且相对且间隔设置，空穴注入和空穴传输层(130)、量子点发光层(140)及电子注入和电子传输层(150)依次夹设在阳极(120)和阴极(160)之间，空穴注入和空穴传输层(130)的一面与阳极(120)相连，阳极(120)提供空穴，阴极(160)提供电子，空穴注入和空穴传输层(130)将空穴传输至量子点发光层(140)，电子注入和电子传输层(150)将电子传输至量子点发光层(140)，空穴和电子在量子点发光层(140)中复合以发光，其中，电子注入和电子传输层(150)包括水醇溶性共轭聚合物。

Description

量子点发光器件及其制备方法及液晶显示装置
本发明要求2016年1月25日递交的发明名称为“量子点发光器件及其制备方法及液晶显示装置”的申请号201610048567.5的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示领域，尤其涉及一种量子点发光器件及其制备方法及液晶显示装置。
背景技术
量子点发光器件，比如，量子点发光二极管(Quantum dot Light Emitting Diode，QLED)因具有色域广、色纯度高、稳定性好、低功耗、低成本等优点被誉为继有机发光器件之后的新一代照明器件。量子点发光二极管包括量子点发光层、空穴传输层及电子传输层。所述电子传输层、所述量子点发光层及所述空穴传输层依次层叠设置。所述电子传输层、所述量子点发光层及所述空穴传输层通常将相应的材料溶解在有机溶剂中，再通过旋涂的方式湿法单独成膜。即，所述电子传输层、所述量子点发光层及所述空穴传输层分为三层来制备。通常，先制备出一层，再接着制备另一层。由于成膜的时候会用到有机溶剂，因此，在量子点发光二极管制备过程中，正在制作的膜层会对已经制作好的相邻的膜层造成破坏，从而造成量子点发光二极管发光效率的降低及制备成功率的降低。
发明内容
本发明提供一种量子点发光器件，所述量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极，所述阳极设置在所述基板上，所述阳极与所述阴极设置在所述基板的同侧，且所述阳极和所述阴极相对且间隔设置，所述空穴注入和空穴传输层、所述量子点发光层及所述电子注入和电子传输层夹设在所述阳极和所述阴极之间，所述空穴 注入和空穴传输层的一面与所述阳极相连，所述量子点发光层及所述电子注入和电子传输层依次层叠设置在所述空穴注入和空穴传输层远离所述阳极的一面，且所述电子注入和电子传输层远离所述量子点发光层的一面与所述阴极相连，所述阳极用于提供空穴，所述阴极用于提供电子，所述空穴注入和空穴传输层用于将所述空穴传输至所述量子点发光层，所述电子注入和电子传输层用于将所述电子传输至所述量子点发光层，所述空穴和所述电子在所述量子点发光层中复合以发光，其中，所述电子注入和电子传输层包括水醇溶性共轭聚合物。
其中，所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
其中，所述阳极包括氧化铟锡。
其中，所述空穴注入和空穴传输层包括PEDOT：PSS或者P型金属氧化物纳米粒子，其中，所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
其中，所述空穴注入和空穴传输层的厚度为10～15nm。
其中，所述量子点发光层的厚度为30～40nm。
其中，所述量子点发光层包括单层或者多层量子点。
其中，所述阴极包括铝，所述阴极的厚度为100～150nm。
本发明还提供了一种量子点发光器件的制备方法，所述量子点发光器件的制备方法包括：
提供基板；
在所述基板的表面上形成阳极；
在所述阳极远离所述基板的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层；
在所述空穴注入和空穴传输层远离所述阳极的表面涂布量子点发光材料以形成量子点发光层；
在所述量子点发光层远离所述空穴注入和空穴传输层的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层，其中，所述电子注入和电子传输层包括水醇溶性共轭聚合物；
在所述电子注入和电子传输层远离所述量子点发光层的表面沉积金属以形成阴极。
本发明还提供了一种液晶显示装置，所述液晶显示装置包括前述任一实施方式所述的量子点发光器件。
相较于现有技术，本发明的量子点发光器件的电子注入和电子传输层包括水醇溶性共轭聚合物可以溶解在极性较大的溶剂中，比如，水、甲醛等。可以避免所述电子注入和电子传输层制备成膜时对所述量子点发光层产生破坏，因此，可以提高所述量子点发光器件的性能。进一步地，所述水醇溶性共轭聚合物是无毒的，在生产过程中对环境无污染，绿色环保。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的量子点发光器件的结构示意图。
图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程图。
图3为本发明一较佳实施方式的液晶显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明一较佳实施方式的量子点发光器件的结构示意图。所述量子点发光器件100包括基板110、阳极120、空穴注入和空穴传输层130、量子点发光层140、电子注入和电子传输层150及阴极160。所述阳极120设置在所述基板110上，所述阳极120和所述阴极160设置在所述基板110的同侧，且所述阳极120相对且间隔设置。所述空穴注入和空穴传输层130、 所述量子点发光层140及所述电子注入和电子传输层150夹设在所述阳极120和所述阴极160之间，所述空穴注入和空穴传输层130的一面与所述阳极120相连，所述量子点发光层140及所述电子注入和电子传输层150依次层叠设置在所述空穴注入和空穴传输层150远离所述阳极120的一面，且所述电子注入和电子传输层150远离所述量子点发光层140的一面与所述阴极160相连。所述阳极120用于提供空穴，所述阴极160用于提供电子，所述空穴注入和空穴传输层130用于将所述空穴传输至所述量子点发光层140，所述电子注入和电子传输层150用于将所述电子传输至所述量子点发光层140，所述空穴和所述电子在所述量子点发光层140中复合以发光，其中，所述电子注入和电子传输层150包括水醇溶性共轭聚合物。
所述水醇溶性共轭聚合物(WACPs)由共轭骨架和含有强极性基团(如胺基、二乙醇胺基、磷酸酯基、羧基、季铵盐、羧酸根、磺酸根、两性离子基团等)的侧链组成，在一实施方式中，所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。所述水醇溶性共轭聚合物作为所述电子注入和电子传输层的材料，可以溶解在极性较大的溶剂中，比如，水、甲醛等。可以避免所述电子注入和电子传输层150制备时对所述量子点发光层140产生破坏，因此，可以提高所述量子点发光器件100的性能。进一步地，所述水醇溶性共轭聚合物是无毒的，在生产过程中对环境无污染，绿色环保。
所述基板110为透明基板，所述基板110可以为但不仅限于为玻璃、塑料基板等。
所述阳极120包括氧化铟锡(ITO)，所述阴极160为金属，比如铝。所述阳极120设置在所述基板110的一表面上。
所述空穴注入和空穴传输层130包括聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene)：poly styrenesulfonate，PEDOT：PSS)或者P型金属氧化物纳米粒子。所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。优选地，所述空穴注入和空穴传输层130的厚度为10～15nm。
所述量子点发光层140的厚度为30～40nm。所述量子点发光层140包括单层或者多层量子点。
所述电子注入和电子传输层150的厚度可以为5～10nm。
相较于现有技术，本发明的量子点发光器件100中的电子注入和电子传输层150包括水醇溶性共轭聚合物可以溶解在极性较大的溶剂中，比如，水、甲醛等。可以避免所述电子注入和电子传输层150制备成膜时对所述量子点发光层140产生破坏，因此，可以提高所述量子点发光器件100的性能。进一步地，所述水醇溶性共轭聚合物是无毒的，在生产过程中对环境无污染，绿色环保。
下面结合图1及前面对所述量子点发光器件100的介绍，下面对本发明的量子点发光器件的制备方法进行介绍。请参阅图2，图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程图。所述量子点发光器件的制备方法包括但不仅限于以下步骤。
步骤S110，提供基板110。
步骤S120，在所述基板110的表面上形成阳极120。
步骤S130，在所述阳极120远离所述基板110的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层130。所述空穴注入和空穴传输层130可以由如下方式形成：采用旋涂等方法，在所述阳极120远离所述基板110的表面涂布空穴注入和空穴传输材料，以形成所述空穴注入和空穴传输层130。
步骤S140，在所述空穴注入和空穴传输层130远离所述阳极120的表面涂布量子点发光材料以形成量子点发光层140。所述量子点发光层140可以由如下方式形成：采用旋涂等方法，在所述空穴注入和空穴传输层130远离所述阳极120的表面涂布量子点发光材料，以形成所述量子点发光层140。
步骤S150，在所述量子点发光层140远离所述空穴注入和空穴传输层130的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层150，其中，所述电子注入和电子传输层150包括水醇溶性共轭聚合物。所述电子注入和电子传输层150可以通过如下方式形成：采用旋涂等方法，在所述量子点发光层140远离所述空穴注入和空穴产生层130的表面涂布电子注入和电子传输材料，以形成所述电子注入和电子传输层150。
步骤S160，在所述电子注入和电子传输层150远离所述量子点发光层140的表面沉积金属以形成阴极160。所述阴极160的制备方法可以由如下方式形 成：采用蒸镀等方法在所述电子注入和电子传输层150远离所述量子点发光层140的表面形成金属，比如，铝，以制备出所述阴极160。所述阴极160的厚度为100nm～150nm。
本发明还提供了一种液晶显示装置10，请参阅图3，所述液晶显示装置10包括前述介绍的量子点发光器件100，在此不再赘述。所述液晶显示装置10可以包括但不仅限于为智能手机、互联网设备(Mobile Internet Device,MID)，电子书，便携式播放站(Play Station Portable,PSP)或者个人数字助理(Personal Digital Assistant,PDA)等便携式电子设备，也可以为显示器等。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (17)

  1. 一种量子点发光器件，其中，所述量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极，所述阳极设置在所述基板上，所述阳极与所述阴极设置在所述基板的同侧，且所述阳极和所述阴极相对且间隔设置，所述空穴注入和空穴传输层、所述量子点发光层及所述电子注入和电子传输层夹设在所述阳极和所述阴极之间，所述空穴注入和空穴传输层的一面与所述阳极相连，所述量子点发光层及所述电子注入和电子传输层依次层叠设置在所述空穴注入和空穴传输层远离所述阳极的一面，且所述电子注入和电子传输层远离所述量子点发光层的一面与所述阴极相连，所述阳极用于提供空穴，所述阴极用于提供电子，所述空穴注入和空穴传输层用于将所述空穴传输至所述量子点发光层，所述电子注入和电子传输层用于将所述电子传输至所述量子点发光层，所述空穴和所述电子在所述量子点发光层中复合以发光，其中，所述电子注入和电子传输层包括水醇溶性共轭聚合物。
  2. 如权利要求1所述的量子点发光器件，其中，所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
  3. 如权利要求1所述的量子点发光器件，其中，所述阳极包括氧化铟锡。
  4. 如权利要求1所述的量子点发光器件，其中，所述空穴注入和空穴传输层包括PEDOT：PSS或者P型金属氧化物纳米粒子，其中，所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
  5. 如权利要求1所述的量子点发光器件，其中，所述空穴注入和空穴传输层的厚度为10～15nm。
  6. 如权利要求1所述的量子点发光器件，其中，所述量子点发光层的厚度为30～40nm。
  7. 如权利要求1所述的量子点发光器件，其中，所述量子点发光层包括单层或者多层量子点。
  8. 如权利要求1所述的量子点发光器件，其中，所述阴极包括铝，所述阴极的厚度为100～150nm。
  9. 一种量子点发光器件的制备方法，其中，所述量子点发光器件的制备方法包括：
    提供基板；
    在所述基板的表面上形成阳极；
    在所述阳极远离所述基板的表面涂布空穴注入和空穴传输材料以形成空穴注入和空穴传输层；
    在所述空穴注入和空穴传输层远离所述阳极的表面涂布量子点发光材料以形成量子点发光层；
    在所述量子点发光层远离所述空穴注入和空穴传输层的表面涂布电子注入和电子传输材料以形成电子注入和电子传输层，其中，所述电子注入和电子传输层包括水醇溶性共轭聚合物；
    在所述电子注入和电子传输层远离所述量子点发光层的表面沉积金属以形成阴极。
  10. 一种液晶显示装置，其中，所述液晶显示装置包括量子点发光器件，所述量子点发光器件包括基板、阳极、空穴注入和空穴传输层、量子点发光层、电子注入和电子传输层及阴极，所述阳极设置在所述基板上，所述阳极与所述阴极设置在所述基板的同侧，且所述阳极和所述阴极相对且间隔设置，所述空穴注入和空穴传输层、所述量子点发光层及所述电子注入和电子传输层夹设在所述阳极和所述阴极之间，所述空穴注入和空穴传输层的一面与所述阳极相连，所述量子点发光层及所述电子注入和电子传输层依次层叠设置在所述空穴注入和空穴传输层远离所述阳极的一面，且所述电子注入和电子传输层远离所 述量子点发光层的一面与所述阴极相连，所述阳极用于提供空穴，所述阴极用于提供电子，所述空穴注入和空穴传输层用于将所述空穴传输至所述量子点发光层，所述电子注入和电子传输层用于将所述电子传输至所述量子点发光层，所述空穴和所述电子在所述量子点发光层中复合以发光，其中，所述电子注入和电子传输层包括水醇溶性共轭聚合物。
  11. 如权利要求10所述的液晶显示装置，其中，所述水醇溶性共轭聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
  12. 如权利要求10所述的液晶显示装置，其中，所述阳极包括氧化铟锡。
  13. 如权利要求10所述的液晶显示装置，其中，所述空穴注入和空穴传输层包括PEDOT：PSS或者P型金属氧化物纳米粒子，其中，所述P型金属氧化物纳米粒子包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
  14. 如权利要求10所述的液晶显示装置，其中，所述空穴注入和空穴传输层的厚度为10～15nm。
  15. 如权利要求10所述的液晶显示装置，其中，所述量子点发光层的厚度为30～40nm。
  16. 如权利要求10所述的液晶显示装置，其中，所述量子点发光层包括单层或者多层量子点。
  17. 如权利要求10所述的液晶显示装置，其中，所述阴极包括铝，所述阴极的厚度为100～150nm。
PCT/CN2016/074065 2016-01-25 2016-02-18 量子点发光器件及其制备方法及液晶显示装置 Ceased WO2017128457A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/033,623 US10050220B2 (en) 2016-01-25 2016-02-18 Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610048567.5A CN105470387A (zh) 2016-01-25 2016-01-25 量子点发光器件及其制备方法及液晶显示装置
CN201610048567.5 2016-01-25

Publications (1)

Publication Number Publication Date
WO2017128457A1 true WO2017128457A1 (zh) 2017-08-03

Family

ID=55607898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/074065 Ceased WO2017128457A1 (zh) 2016-01-25 2016-02-18 量子点发光器件及其制备方法及液晶显示装置

Country Status (3)

Country Link
US (1) US10050220B2 (zh)
CN (1) CN105470387A (zh)
WO (1) WO2017128457A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108767126A (zh) * 2018-05-28 2018-11-06 京东方科技集团股份有限公司 一种qled器件及其制作方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679954A (zh) 2016-01-25 2016-06-15 深圳市华星光电技术有限公司 量子点发光器件及其制备方法及液晶显示装置
CN107046107A (zh) * 2016-12-13 2017-08-15 Tcl集团股份有限公司 处理pedot:pss的方法、qled及制备方法
CN110739404B (zh) 2018-07-18 2021-04-02 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
CN110739408B (zh) * 2018-07-18 2021-06-29 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
CN111224018B (zh) * 2018-11-26 2022-04-01 Tcl科技集团股份有限公司 一种量子点发光二极管的制备方法
CN113196880B (zh) * 2018-12-10 2024-09-17 夏普株式会社 发光元件、发光设备
CN110165066A (zh) * 2019-06-10 2019-08-23 南昌航空大学 一种量子点发光二极管及其制备方法
CN112086563B (zh) * 2019-06-12 2022-03-22 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
KR102718279B1 (ko) * 2019-09-23 2024-10-15 삼성전자주식회사 발광소자, 발광소자의 제조 방법과 표시 장치
CN114267814B (zh) * 2020-09-16 2023-12-26 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN114267799B (zh) * 2020-09-16 2024-02-20 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096656A1 (en) * 2008-10-21 2010-04-22 Thuc-Quyen Nguyen Cationic conjugated polyelectrolyte electron injection layers altered with counter anions having oxidative properties
CN104465911A (zh) * 2013-09-23 2015-03-25 三星显示有限公司 量子点发光装置及显示设备
CN105140361A (zh) * 2015-09-11 2015-12-09 Tcl集团股份有限公司 量子点发光二极管及其制备方法
CN105185919A (zh) * 2015-09-02 2015-12-23 Tcl集团股份有限公司 混合型qled及其制备方法
CN105206761A (zh) * 2015-09-25 2015-12-30 南方科技大学 一种发光二极管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224859A1 (en) * 2007-10-16 2010-09-09 Hcf Partners, Lp Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots
KR101173105B1 (ko) * 2010-05-24 2012-08-14 한국과학기술원 유기발광소자
CN201985178U (zh) * 2010-10-09 2011-09-21 中国计量学院 一种光子晶体结构量子点有机发光二极管发光装置
CN102263205B (zh) * 2011-07-25 2013-08-28 华南理工大学 可交联共轭聚合物材料在倒装有机光电器件中的应用
WO2013103440A1 (en) * 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
CN103427030A (zh) * 2012-05-31 2013-12-04 上海理工大学 量子点白光发光器件
CN103972416B (zh) * 2014-05-15 2017-02-08 华北电力大学 基于反向结构的半导体量子点发光二极管及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096656A1 (en) * 2008-10-21 2010-04-22 Thuc-Quyen Nguyen Cationic conjugated polyelectrolyte electron injection layers altered with counter anions having oxidative properties
CN104465911A (zh) * 2013-09-23 2015-03-25 三星显示有限公司 量子点发光装置及显示设备
CN105185919A (zh) * 2015-09-02 2015-12-23 Tcl集团股份有限公司 混合型qled及其制备方法
CN105140361A (zh) * 2015-09-11 2015-12-09 Tcl集团股份有限公司 量子点发光二极管及其制备方法
CN105206761A (zh) * 2015-09-25 2015-12-30 南方科技大学 一种发光二极管及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DU, BIN ET AL.: "Research Progress of Ammonium-Functionalized Conjugated Polyele Ctrolyte and their Precursors Used in Electron Injection Layer of PLED", CHINA PRINTING AND PACKAGING STUDY, vol. 5, no. 1, 28 February 2013 (2013-02-28), pages 1 - 2,4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108767126A (zh) * 2018-05-28 2018-11-06 京东方科技集团股份有限公司 一种qled器件及其制作方法
CN108767126B (zh) * 2018-05-28 2020-07-17 京东方科技集团股份有限公司 一种qled器件及其制作方法

Also Published As

Publication number Publication date
CN105470387A (zh) 2016-04-06
US10050220B2 (en) 2018-08-14
US20180047923A1 (en) 2018-02-15

Similar Documents

Publication Publication Date Title
WO2017128457A1 (zh) 量子点发光器件及其制备方法及液晶显示装置
US9960378B2 (en) Quantum dot light emitting device and manufacturing method thereof, liquid crystal display device
WO2017161615A1 (zh) 量子点发光器件及其制备方法及液晶显示装置
Manders et al. High efficiency and ultra‐wide color gamut quantum dot LEDs for next generation displays
CN105470408B (zh) 用于打印成膜工艺的凹槽结构及其制作方法
EP3690969B1 (en) Manufacturing method of an all-solution oled device
US10510990B2 (en) Groove structure for printing OLED display and manufacturing method for OLED display
CN106601922B (zh) 一种量子点显示面板及其制作方法
US10566390B2 (en) Series connected quantum dot light-emitting device, panel and display device
CN105206761B (zh) 一种发光二极管及其制备方法
JPWO2017010124A1 (ja) 有機薄膜積層体及び有機エレクトロルミネッセンス素子
US20210332295A1 (en) White light quantum dot light emitting diode device and preparation method thereof
WO2018152885A1 (zh) 一种量子点电致发光器件及其制作方法
WO2017128552A1 (zh) 量子点发光器件及其制备方法及液晶显示装置
CN105489782A (zh) 量子点发光器件及量子点发光器件的制备方法
JP2017022063A (ja) 有機薄膜積層体の製造方法及び有機エレクトロルミネッセンス素子の製造方法
CN106711177A (zh) 一种增强光提取率的qled场效应晶体管及其制备方法
CN105140413B (zh) 显示面板、有机发光器件及其制备方法
CN108400250A (zh) 基于高功函数金属阴极的有机电致发光器件及其制备方法
KR102288225B1 (ko) 유기 발광 소자와 그 제조 방법 및 그를 이용한 유기 발광 디스플레이 장치
US20210159467A1 (en) Method of manufacturing light-emitting device
CN115440763A (zh) 显示器件及其制备方法
US20120032153A1 (en) Organic Light-Emitting Diode Device
CN105161626A (zh) 一种掺杂的纳米锡化物有机发光器件
CN205264760U (zh) 有机电致发光器件和显示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15033623

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16887341

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16887341

Country of ref document: EP

Kind code of ref document: A1