WO2017126199A1 - Composition de résine de silicone durcissable et son produit durci, et dispositif semi-conducteur optique l'utilisant - Google Patents

Composition de résine de silicone durcissable et son produit durci, et dispositif semi-conducteur optique l'utilisant Download PDF

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Publication number
WO2017126199A1
WO2017126199A1 PCT/JP2016/083317 JP2016083317W WO2017126199A1 WO 2017126199 A1 WO2017126199 A1 WO 2017126199A1 JP 2016083317 W JP2016083317 W JP 2016083317W WO 2017126199 A1 WO2017126199 A1 WO 2017126199A1
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WO
WIPO (PCT)
Prior art keywords
component
silicone resin
group
formula
represented
Prior art date
Application number
PCT/JP2016/083317
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English (en)
Japanese (ja)
Inventor
亘 河合
勝宏 秋山
佑 松野
真 情野
Original Assignee
セントラル硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016200588A external-priority patent/JP2017128707A/ja
Application filed by セントラル硝子株式会社 filed Critical セントラル硝子株式会社
Publication of WO2017126199A1 publication Critical patent/WO2017126199A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

La composition de résine de silicone durcissable selon la présente invention contient au moins un composant (A), un composant (B) et un composant (C). Composant (A) : une résine de silicone prédéterminée représentée par la formule [1] et ayant une viscosité de 10 000 cP ou moins. Composant (B) : une résine de silicone prédéterminée représentée par la formule [2] et ayant une viscosité de 10 000 cP ou moins. Composant (C) : un catalyseur hydrosilylé. (H-SiMe2O1/2)a(Me2SiO2/2)b(PhSiO3/2)c(SiO4/2)d [1] (Vi-SiMe2O1/2)e(Me2SiO2/2)f(PhSiO3/2)g(SiO4/2)h [2] La composition de résine de silicone durcissable présente une faible viscosité et une durabilité suffisante, et est utile en tant que matériau d'étanchéité pour éléments semi-conducteurs dans un dispositif semi-conducteur optique.
PCT/JP2016/083317 2016-01-19 2016-11-10 Composition de résine de silicone durcissable et son produit durci, et dispositif semi-conducteur optique l'utilisant WO2017126199A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-007512 2016-01-19
JP2016007512 2016-01-19
JP2016-200588 2016-10-12
JP2016200588A JP2017128707A (ja) 2016-01-19 2016-10-12 硬化性シリコーン樹脂組成物およびその硬化物、並びにこれらを用いた光半導体装置

Publications (1)

Publication Number Publication Date
WO2017126199A1 true WO2017126199A1 (fr) 2017-07-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/083317 WO2017126199A1 (fr) 2016-01-19 2016-11-10 Composition de résine de silicone durcissable et son produit durci, et dispositif semi-conducteur optique l'utilisant

Country Status (1)

Country Link
WO (1) WO2017126199A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005105217A (ja) * 2003-10-01 2005-04-21 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置
JP2009215420A (ja) * 2008-03-10 2009-09-24 Shin Etsu Chem Co Ltd 高硬度シリコーンゴムを与える組成物およびそれを封止材として用いた半導体装置
JP2010106223A (ja) * 2008-10-31 2010-05-13 Dow Corning Toray Co Ltd 電気・電子部品用封止・充填剤および電気・電子部品
WO2012029538A1 (fr) * 2010-08-31 2012-03-08 東レ・ダウコーニング株式会社 Composition de polysiloxane et produit durci de ladite composition
JP2012082300A (ja) * 2010-10-08 2012-04-26 Shin-Etsu Chemical Co Ltd 付加硬化型シリコーン組成物、及び該組成物の硬化物により半導体素子が被覆された半導体装置
JP2012144617A (ja) * 2011-01-11 2012-08-02 Sekisui Chem Co Ltd 光半導体装置用ダイボンド材及びそれを用いた光半導体装置
JP2013067683A (ja) * 2011-09-21 2013-04-18 Dow Corning Toray Co Ltd 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
JP2013147659A (ja) * 2007-11-19 2013-08-01 Toagosei Co Ltd ポリシロキサンおよびその硬化物の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005105217A (ja) * 2003-10-01 2005-04-21 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置
JP2013147659A (ja) * 2007-11-19 2013-08-01 Toagosei Co Ltd ポリシロキサンおよびその硬化物の製造方法
JP2009215420A (ja) * 2008-03-10 2009-09-24 Shin Etsu Chem Co Ltd 高硬度シリコーンゴムを与える組成物およびそれを封止材として用いた半導体装置
JP2010106223A (ja) * 2008-10-31 2010-05-13 Dow Corning Toray Co Ltd 電気・電子部品用封止・充填剤および電気・電子部品
WO2012029538A1 (fr) * 2010-08-31 2012-03-08 東レ・ダウコーニング株式会社 Composition de polysiloxane et produit durci de ladite composition
JP2012082300A (ja) * 2010-10-08 2012-04-26 Shin-Etsu Chemical Co Ltd 付加硬化型シリコーン組成物、及び該組成物の硬化物により半導体素子が被覆された半導体装置
JP2012144617A (ja) * 2011-01-11 2012-08-02 Sekisui Chem Co Ltd 光半導体装置用ダイボンド材及びそれを用いた光半導体装置
JP2013067683A (ja) * 2011-09-21 2013-04-18 Dow Corning Toray Co Ltd 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子

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