WO2017117829A1 - 一种tft液晶显示模组及其封装结构和封装方法 - Google Patents

一种tft液晶显示模组及其封装结构和封装方法 Download PDF

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Publication number
WO2017117829A1
WO2017117829A1 PCT/CN2016/072552 CN2016072552W WO2017117829A1 WO 2017117829 A1 WO2017117829 A1 WO 2017117829A1 CN 2016072552 W CN2016072552 W CN 2016072552W WO 2017117829 A1 WO2017117829 A1 WO 2017117829A1
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Prior art keywords
tft
layer
protective layer
package structure
hydrophobic
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French (fr)
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李文辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to the technical field of a liquid crystal display package structure, and in particular to a TFT liquid crystal display module, a package structure thereof and a packaging method.
  • FIG. 1 is a schematic diagram of a TFT package structure in the prior art.
  • the oxide semiconductor TFT easily absorbs moisture in the environment and causes variation in TFT performance.
  • the protective layer 3 is often used to insulate the water vapor 555, and the protective layer 3 may be an inorganic material or an organic material. However, water vapor is adsorbed on the surface of the protective layer 3, and it is highly likely to penetrate the protective layer 3 and invade the TFT structural unit 2, thereby affecting the performance of the TFT.
  • reference numeral 1 is a glass substrate.
  • the embodiment of the invention provides a TFT liquid crystal display module, a package structure and a packaging method thereof, so as to solve the technical problem that the TFT package structure in the prior art easily invades the water vapor in the environment and further affects the performance of the TFT.
  • an embodiment of the present invention provides a TFT package structure having a hydrophobic layer, the package structure including a first protection layer disposed on a surface of the TFT, and a second protection disposed outside the first protection layer. a layer, and a hydrophobic layer disposed outside the second protective layer.
  • the hydrophobic layer is of one or more layers.
  • the hydrophobic layer is made of an organic photoresist material.
  • the hydrophobic layer is formed by plasma treatment with an organic photoresist material.
  • the first protective layer and the second protective layer are made of an insulating material.
  • the present invention also provides a TFT packaging method having a hydrophobic layer, the packaging method comprising:
  • a hydrophobic layer is formed on an outer surface of the second protective layer.
  • the hydrophobic layer is of one or more layers.
  • the hydrophobic layer is made of an organic photoresist material.
  • the hydrophobic layer is formed by plasma treatment with an organic photoresist material.
  • the present invention provides a TFT liquid crystal display module in which a TFT structural unit in the TFT liquid crystal display module is packaged by the packaging method described in the above embodiments.
  • the TFT liquid crystal display module provided by the present invention the package structure and the packaging method thereof have a hydrophobic layer formed on the outer surface of the TFT protective layer, and the hydrophobic layer does not adsorb water vapor, and has the function of blocking water vapor intrusion. Thereby achieving the purpose of protecting the performance of the TFT.
  • FIG. 1 is a schematic diagram of a TFT package structure in the prior art
  • FIG. 2 is a schematic structural view of a preferred embodiment of a TFT package structure having a hydrophobic layer according to the present invention
  • FIG. 3 is a schematic flow chart of a preferred embodiment of a TFT encapsulation method having a hydrophobic layer according to the present invention
  • FIG. 4 is a schematic structural view of fabricating the first and second protective layers in the TFT packaging method of the embodiment of FIG. 3;
  • FIG. 5 is a schematic structural view of a hydrophobic layer formed in the TFT packaging method of the embodiment of FIG. 3.
  • FIG. 5 is a schematic structural view of a hydrophobic layer formed in the TFT packaging method of the embodiment of FIG. 3.
  • FIG. 2 is a schematic structural diagram of a preferred embodiment of a TFT package structure having a hydrophobic layer according to the present invention; wherein the package structure includes, but is not limited to, the following structural units: a substrate 100, a TFT structural unit 200, and a first protective layer. 300, a second protective layer 400 and a hydrophobic layer 500.
  • the TFT structural unit 200 is disposed on the substrate 100, wherein the TFT structural unit 200 further includes a gate 210, a semiconductor layer 220, a source 230, a drain 240, a metal oxide layer 250, and the like, regarding the TFT structural unit.
  • the TFT structural unit 200 further includes a gate 210, a semiconductor layer 220, a source 230, a drain 240, a metal oxide layer 250, and the like, regarding the TFT structural unit.
  • the detailed structural features of the present invention are within the scope of those skilled in the art and will not be described herein.
  • the first protective layer 300 is provided as a passivation layer on the outer surface of the TFT structural unit 200, wherein the first protective layer 300 is made of an insulating material, preferably PVC (Polyvinyl) Chloride, polyvinyl chloride).
  • the first protective layer 300 may be provided in the form of one or more layers.
  • the second protective layer 400 is disposed as a flat layer on the outer surface of the first protective layer 300, wherein the second protective layer 400 is made of an insulating material, and is preferably PVC (Polyvinyl). Chloride, polyvinyl chloride). Moreover, the second protective layer 400 may also be provided in the form of one or more layers. In order to further enhance the waterproof effect of the TFT, a hydrophobic layer 500 is further provided on the outer surface of the second protective layer 400. Similarly, the hydrophobic layer 500 may also be provided in the form of one or more layers. Preferably, the hydrophobic layer 500 is made of an organic photoresist material, and the organic photoresist material is subjected to plasma gas treatment to form a final hydrophobic layer structure. . The plasma gas used may be tetrafluoromethane or sulfur hexafluoride.
  • the TFT package structure provided by the present invention has an organic photoresist layer formed on the outer surface of the TFT protective layer, and then the organic photoresist material is treated by plasma, thereby obtaining a hydrophobic layer, since the hydrophobic layer does not adsorb.
  • Water vapor has the function of blocking the intrusion of water vapor, thereby achieving the purpose of protecting the performance of the TFT.
  • FIG. 3 is a schematic flowchart of a preferred embodiment of a TFT encapsulation method having a hydrophobic layer according to the present invention. Limited to the following steps.
  • step S100 a first protective layer is formed on the surface of the TFT.
  • FIG. 4 is a schematic structural diagram of fabricating the first and second protective layers in the TFT packaging method of the embodiment of FIG. 3.
  • the TFT structural unit 200 is first disposed on the substrate 100, wherein the TFT structure is The unit 200 further includes a gate 210, a semiconductor layer 220, a source 230, a drain 240, a metal oxide layer 250, and the like.
  • the detailed structural features of the TFT structural unit 200 within the scope that can be understood by those skilled in the art, this I won't go into details here.
  • the first protective layer 300 is disposed on the outer surface of the TFT structural unit 200, wherein the first protective layer 300 is made of an insulating material, preferably PVC (Polyvinyl) Chloride, polyvinyl chloride).
  • the first protective layer 300 may be provided in the form of one or more layers.
  • Step S110 forming a second protective layer on the outer surface of the first protective layer.
  • the second protective layer 400 is disposed on the outer surface of the first protective layer 300, wherein the second protective layer 400 is made of an insulating material, and is preferably PVC (Polyvinyl). Chloride, polyvinyl chloride). Moreover, the second protective layer 400 may also be provided in the form of one or more layers.
  • PVC Polyvinyl
  • Chloride Polyvinyl chloride
  • Step S120 forming a hydrophobic layer on the outer surface of the second protective layer.
  • a hydrophobic layer 500 is further provided on the outer surface of the second protective layer 400.
  • the hydrophobic layer 500 may also be provided in the form of one or more layers.
  • the hydrophobic layer 500 is made of an organic photoresist material, and the organic photoresist material is processed by a plasma gas 999 to form a final hydrophobic layer. structure.
  • the plasma gas 999 used may be tetrafluoromethane or sulfur hexafluoride. Please refer to FIG. 5.
  • FIG. 5 is a schematic structural diagram of fabricating a hydrophobic layer in the TFT packaging method of the embodiment of FIG. After the plasma gas 999 is processed, the hydrophobic layer 500 is formed, and the finally formed TFT package structure is shown in FIG.
  • the TFT packaging method provided by the present invention has an organic photoresist layer formed on the outer surface of the TFT protective layer, and then the organic photoresist material is treated by plasma, thereby obtaining a hydrophobic layer, since the hydrophobic layer does not adsorb.
  • Water vapor has the function of blocking the intrusion of water vapor, thereby achieving the purpose of protecting the performance of the TFT.
  • the embodiment of the present invention further provides a liquid crystal display module, which comprises a TFT structural unit, and the TFT structural unit is encapsulated by the packaging method in the above embodiment.
  • a liquid crystal display module which comprises a TFT structural unit, and the TFT structural unit is encapsulated by the packaging method in the above embodiment.
  • the structural features of other parts of the liquid crystal display module are within the scope of those skilled in the art and will not be described in detail herein.

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Abstract

一种TFT液晶显示模组及其封装结构和封装方法，该封装结构包括盖设于TFT表面的第一保护层（300），设于第一保护层（300）外的第二保护层（400），以及设于第二保护层（400）外的疏水层（500）。该TFT的封装结构，通过在TFT保护层外表面上制作有机光阻层，然后用等离子体处理该有机光阻材料，进而得到疏水层（500），由于疏水层（500）不吸附水汽，具有阻隔水汽侵入的作用，从而达到保护TFT性能稳定的目的。

Description

一种TFT液晶显示模组及其封装结构和封装方法
【技术领域】
本发明涉及液晶显示器封装结构的技术领域，具体是涉及一种TFT液晶显示模组及其封装结构和封装方法。
【背景技术】
氧化物半导体（如IGZO ，indium gallium zinc oxide，铟镓锌氧化物的缩写），等等）TFT存在的问题，如图1所示，图1为现有技术中一种TFT封装结构的示意图。
氧化物半导体TFT，容易吸收环境中的水汽，造成TFT性能变异。常使用保护层3来隔绝水汽555，保护层3可以是无机材料，或有机材料。但水汽会吸附在保护层3表面，极有可能穿透保护层3，侵入到TFT结构单元2处，进而影响到TFT的性能。其中，图中标注1为玻璃基板。
【发明内容】
本发明实施例提供一种TFT液晶显示模组及其封装结构和封装方法，以解决现有技术中TFT封装结构容易使环境中的水汽侵入，进而影响TFT性能的技术问题。
为解决上述问题，本发明实施例提供了一种具有疏水层的TFT封装结构，所述封装结构包括盖设于TFT表面的第一保护层，设于所述第一保护层外的第二保护层，以及设于所述第二保护层外的疏水层。
根据本发明一优选实施例，所述疏水层为一层或者多层结构。
根据本发明一优选实施例，所述疏水层的材质为有机光阻材料。
根据本发明一优选实施例，所述疏水层利用有机光阻材料经过等离子处理之后形成。
根据本发明一优选实施例，所述第一保护层和所述第二保护层的材质为绝缘材料。
为解决上述技术问题，本发明还一种具有疏水层的TFT封装方法，所述封装方法包括：
在TFT表面形成第一保护层；
在所述第一保护层的外表面形成第二保护层；
在所述第二保护层的外表面形成疏水层。
根据本发明一优选实施例，所述疏水层为一层或者多层结构。
根据本发明一优选实施例，所述疏水层的材质为有机光阻材料。
根据本发明一优选实施例，所述疏水层利用有机光阻材料经过等离子处理之后形成。
进一步地，本发明提供一种TFT液晶显示模组，所述TFT液晶显示模组中的TFT结构单元利用上述实施例中所述的封装方法封装而成。
相对于现有技术，本发明提供的TFT液晶显示模组及其封装结构和封装方法，通过在TFT保护层外表面上制作有疏水层，由于疏水层不吸附水汽，具有阻隔水汽侵入的作用，从而达到保护TFT性能稳定的目的。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中一种TFT封装结构示意图；
图2是本发明具有疏水层的TFT封装结构一优选实施例的结构示意图；
图3是本发明具有疏水层的TFT封装方法一优选实施例的流程示意图；
图4是图3实施例TFT封装方法中制作第一、第二保护层的结构示意图；以及
图5是图3实施例TFT封装方法中制作疏水层的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图2，图2是本发明具有疏水层的TFT封装结构一优选实施例的结构示意图；其中，该封装结构包括但不限于以下结构单元：基板100、TFT结构单元200、第一保护层300、第二保护层400以及疏水层500。
具体而言，该TFT结构单元200设在基板100上，其中，TFT结构单元200进一步包括栅极210、半导体层220、源极230、漏极240以及金属氧化物层250等，关于TFT结构单元200的详细结构特征，在本领域技术人员能够理解的范围之内，此处不再赘述。
第一保护层300作为钝化层盖设于TFT结构单元200的外表面，其中，该第一保护层300为绝缘材料制成，优选地为PVC（Polyvinyl chloride，聚氯乙烯）。第一保护层300可以为一层或者多层的结构形式设置。
第二保护层400作为平坦层盖设于第一保护层300的外表面，其中，该第二保护层400为绝缘材料制成，也优选地为PVC（Polyvinyl chloride，聚氯乙烯）。而且第二保护层400也可以为一层或者多层的结构形式设置。为了进一步加强TFT的防水效果，在第二保护层400的外表面还设有疏水层500。同样的，疏水层500也可以为一层或者多层的结构形式设置，优选地，该疏水层500的材质为有机光阻材料，并且有机光阻材料经过等离子气体处理之后形成最终的疏水层结构。其中，采用的等离子气体可以为四氟甲烷或者六氟化硫等。
相对于现有技术，本发明提供的TFT封装结构，通过在TFT保护层外表面上制作有有机光阻层，然后用等离子体处理该有机光阻材料，进而得到疏水层，由于疏水层不吸附水汽，具有阻隔水汽侵入的作用，从而达到保护TFT性能稳定的目的。
进一步地，本发明实施例还提供一种具有疏水层的TFT封装方法，请参阅图3，图3是本发明具有疏水层的TFT封装方法一优选实施例的流程示意图，该封装方法包括但不限于以下步骤。
步骤S100，在TFT表面形成第一保护层。
请参阅图4，图4是图3实施例TFT封装方法中制作第一、第二保护层的结构示意图，在步骤S100中，首先需要将TFT结构单元200设置在基板100上，其中，TFT结构单元200进一步包括栅极210、半导体层220、源极230、漏极240以及金属氧化物层250等，关于TFT结构单元200的详细结构特征，在本领域技术人员能够理解的范围之内，此处不再赘述。
第一保护层300盖设于TFT结构单元200的外表面，其中，该第一保护层300为绝缘材料制成，优选地为PVC（Polyvinyl chloride，聚氯乙烯）。第一保护层300可以为一层或者多层的结构形式设置。
步骤S110，在第一保护层的外表面形成第二保护层。
在步骤S110中，第二保护层400盖设于第一保护层300的外表面，其中，该第二保护层400为绝缘材料制成，也优选地为PVC（Polyvinyl chloride，聚氯乙烯）。而且第二保护层400也可以为一层或者多层的结构形式设置。
步骤S120，在第二保护层的外表面形成疏水层。
为了进一步加强TFT的防水效果，在第二保护层400的外表面还设有疏水层500。同样的，疏水层500也可以为一层或者多层的结构形式设置，优选地，该疏水层500的材质为有机光阻材料，并且有机光阻材料经过等离子气体999处理之后形成最终的疏水层结构。其中，采用的等离子气体999可以为四氟甲烷或者六氟化硫等。请参阅图5，图5是图3实施例TFT封装方法中制作疏水层的结构示意图。经过等离子气体999处理之后的形成疏水层500，最终形成的TFT封装结构请参阅图2中所示。
相对于现有技术，本发明提供的TFT封装方法，通过在TFT保护层外表面上制作有有机光阻层，然后用等离子体处理该有机光阻材料，进而得到疏水层，由于疏水层不吸附水汽，具有阻隔水汽侵入的作用，从而达到保护TFT性能稳定的目的。
另外，本发明实施例还提供一种液晶显示模组，该液晶显示模组中包括TFT结构单元，而该TFT结构单元则是通过上述实施例中的封装方法封装而成。关于液晶显示模组其他部分的结构特征，在本领域技术人员能够理解的范围之内，此处不再详述。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种具有疏水层的TFT封装结构，其特征在于，所述封装结构包括盖设于TFT表面的第一保护层，设于所述第一保护层外的第二保护层，以及设于所述第二保护层外的疏水层。
  2. 根据权利要求1所述的TFT封装结构，其特征在于，所述疏水层为一层或者多层结构。
  3. 根据权利要求1所述的TFT封装结构，其特征在于，所述疏水层的材质为有机光阻材料。
  4. 根据权利要求3所述的TFT封装结构，其特征在于，所述疏水层利用有机光阻材料经过等离子处理之后形成。
  5. 根据权利要求1所述的TFT封装结构，其特征在于，所述第一保护层和所述第二保护层的材质为绝缘材料。
  6. 根据权利要求5所述的TFT封装结构，其特征在于，所述第一保护层和所述第二保护层的材质为聚氯乙烯。
  7. 根据权利要求5所述的TFT封装结构，其特征在于，所述第一保护层和所述第二保护层分别为一层或者多层的结构。
  8. 根据权利要求4所述的TFT封装结构，其特征在于，处理所述有机光阻材料的为等离子气体。
  9. 根据权利要求8所述的TFT封装结构，其特征在于，所述等离子气体为四氟甲烷或者六氟化硫。
  10. 一种具有疏水层的TFT封装方法，其特征在于，所述封装方法包括：
    在TFT表面形成第一保护层；
    在所述第一保护层的外表面形成第二保护层；
    在所述第二保护层的外表面形成疏水层。
  11. 根据权利要求10所述的封装方法，其特征在于，所述疏水层为一层或者多层结构。
  12. 根据权利要求10所述的封装方法，其特征在于，所述疏水层的材质为有机光阻材料。
  13. 根据权利要求12所述的封装方法，其特征在于，所述疏水层利用有机光阻材料经过等离子处理之后形成。
  14. 根据权利要求10所述的封装方法，其特征在于，所述第一保护层和所述第二保护层的材质为绝缘材料。
  15. 根据权利要求14所述的封装方法，其特征在于，所述第一保护层和所述第二保护层的材质为聚氯乙烯。
  16. 根据权利要求14所述的封装方法，其特征在于，所述第一保护层和所述第二保护层分别为一层或者多层的结构。
  17. 根据权利要求13所述的封装方法，其特征在于，处理所述有机光阻材料的为等离子气体。
  18. 根据权利要求17所述的封装方法，其特征在于，所述等离子气体为四氟甲烷或者六氟化硫。
  19. 一种TFT液晶显示模组，其特征在于，所述TFT液晶显示模组中的TFT结构单元利用权利要求10所述的封装方法封装而成。
PCT/CN2016/072552 2016-01-05 2016-01-28 一种tft液晶显示模组及其封装结构和封装方法 Ceased WO2017117829A1 (zh)

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