WO2017110673A1 - Dispositif de biprisme et dispositif à faisceau de particules chargées - Google Patents

Dispositif de biprisme et dispositif à faisceau de particules chargées Download PDF

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Publication number
WO2017110673A1
WO2017110673A1 PCT/JP2016/087541 JP2016087541W WO2017110673A1 WO 2017110673 A1 WO2017110673 A1 WO 2017110673A1 JP 2016087541 W JP2016087541 W JP 2016087541W WO 2017110673 A1 WO2017110673 A1 WO 2017110673A1
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Prior art keywords
electrode
filament
contact
seat
biprism
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PCT/JP2016/087541
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English (en)
Japanese (ja)
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研 原田
惠子 嶌田
甲大 新津
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国立研究開発法人理化学研究所
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Publication of WO2017110673A1 publication Critical patent/WO2017110673A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes

Definitions

  • the present invention relates to charged particle beam technology, and more particularly to interference technology using a charged particle beam device.
  • Charged particle beams are not only easy to control convergence, divergence, and deflection using an electromagnetic field, but also have a large interaction with the material and use the degree of scattering that occurs when the material is transmitted or reflected. It has been put into practical use as a measuring device that knows information on the inside and surface of a substance.
  • an electron beam is an observation device or an analysis device typified by an electron microscope or an accessory device thereof
  • an ion beam is a processing device typified by a focused ion beam device.
  • interference measurement methods using the wave nature of charged particles have also become common. Interferometry using an ion beam is still less common than electron beams, but the helium ion microscope clearly records the interference effect in the observed image, and has reached a technical level that enables interference measurement. (Refer nonpatent literature 1).
  • the biprism device is a deflecting device used for the purpose of dividing / separating or superimposing charged particle beams.
  • the biprism name is given because it has the same action as a Fresnel biprism (a prism having two prisms), which is one of the deflection / interference devices in optics.
  • the biprism device is an indispensable interference device in the field of electron beam interference.
  • the imaging optical system includes a plurality of biprism devices, and the irradiation optical system also includes a biprism device. An apparatus equipped with a device has begun to be put into practical use.
  • Prior art documents related to the biprism device include the following.
  • the biprism device is an optical device for a charged particle beam that has the same effect as a Fresnel biprism in optics, and there are two types, an electric field type and a magnetic type.
  • the subject of the present invention is a widely used electric field type biprism, which is composed of a filament electrode at the center and a parallel plate ground electrode held in such a manner as to sandwich the electrode.
  • a glass wire filament is mainly used for the filament electrode, and the surface is metal-coated (mainly gold, platinum, platinum-palladium alloy or the like) to provide conductivity.
  • this filament electrode is used in an interference optical system, it is more convenient as it is thinner due to the demand for coherence.
  • a filament electrode having a wire diameter of about 0.5 ⁇ m is used. Since this filament electrode is so thin that it cannot be seen with the naked eye, it must be handled with great care so that it is free from mechanical damage and dust adhesion.
  • the filament electrode Since the filament electrode is arranged so as to straddle the optical axis of the charged particle beam device, it is exactly irradiated to the charged particle beam. For this reason, impurities (mainly carbon-based or organic-based contamination) remaining in the vacuum of the charged particle beam device are likely to adhere, and when it adheres, local charge-up occurs due to the adhered matter, causing an interference phenomenon. It is a disturbing factor.
  • impurities mainly carbon-based or organic-based contamination
  • the current situation is that the filament electrode is re-coated with metal after the charge-up occurs or is replaced with a new filament electrode.
  • the filament electrode requires careful attention for its production, it is a difficult task that requires a response by an expert.
  • the filament electrode is energized and heated to remove the attached contamination, or the heating is continued during use so that the contamination is not attached, but it has not been widely used.
  • An object of the present invention is to provide a biprism device and a charged particle beam device capable of solving the above-described problems and preventing local char-up at a portion where contamination has adhered.
  • a biprism device includes a filament perpendicular to the optical axis of the charged particle beam device, and a plane normal to the optical axis and an axis perpendicular to both of the filaments.
  • a pair of parallel plate electrodes disposed between the filaments, and a first seat electrode and a second seat electrode that are fixed at both ends of the filament and insulated from each other by an insulating portion, and are parallel to the optical axis.
  • a first contact electrode connected to a power source, and a second contact electrode.
  • Uru Vipri Beam device and to provide a charged particle beam apparatus using the same.
  • the local charge-up due to the adhesion of contamination can be eliminated. Further, it becomes possible to reuse the filament that has become unusable due to local charge-up. Furthermore, when a metallic filament is used, the operation period of the biprism device can be significantly extended because there is no damage such as peeling due to irradiation with a charged particle beam.
  • FIG. 1 is a schematic diagram illustrating a configuration of a biprism device according to Embodiment 1.
  • FIG. 3 is a schematic diagram illustrating a range of azimuth angles that can be energized in the biprism device according to the first embodiment.
  • FIG. 6 is a schematic diagram showing that the biprism device according to the second embodiment can be deflected in the same azimuth angle range as that during energization.
  • FIG. FIG. 10 is a schematic diagram illustrating an example of an entire system of an electron beam interference device according to a fourth embodiment.
  • the filament electrode may be simply referred to as a filament.
  • ⁇ Bi-Prism Device> The action of deflection by a widely used electric field type biprism device is not limited to an electron beam, but is common to charged particle beams.
  • the positive / negative of the charge can be easily controlled by the positive / negative of the potential applied to the filament electrode, but in the following description, the description will be mainly made using an electron beam biprism or an electron microscope equipped with the same.
  • the present invention is not limited to an electron biprism or an electron microscope.
  • the electric field type biprism 9 is composed of a filament electrode 91 at the center and a parallel plate ground electrode 99 held so as to sandwich the electrode.
  • the electron beams 27 that pass in the vicinity of the filament electrode 91 are deflected to face each other by the potential of the filament electrode 91 as shown in FIG.
  • the A plane 22 is drawn perpendicularly to the electron trajectory 27 in FIG. 1. This is an equiphase surface when expressing an electron beam as a wave, and is generally a plane perpendicular to the electron orbit. Is called the wavefront.
  • the two wavefronts 22 deflected in the directions facing each other overlap behind the filament electrode 91 to form the interference fringes 8.
  • ⁇ kV f using the voltage V f applied to the filament electrode and the deflection coefficient k.
  • FIG. 2 shows, as an application example using a biprism device, the most common optical system for creating an interference microscope image by electron beam holography (see Non-Patent Document 2).
  • the biprism device 9 is disposed between the objective lens 5 and the image plane 71 of the sample, and a positive potential is applied to the filament electrode 91, whereby the object wave 21 that is an electron beam transmitted through the sample 3.
  • an electron beam that passes through the left side of the filament electrode is hatched) and a reference wave 23 (an electron beam that passes through the right side of the filament electrode in FIG. 2) is an electron beam that has passed through the side without the sample. ) Is superimposed to obtain an image in which interference fringes 8 are superimposed on the sample image 31 which is an interference microscope image. That is, the phase change that the sample 3 gives to the wavefront of the object wave 21 is recorded as the modulation of the superimposed interference fringe 8.
  • the charged particle beam apparatus has an axisymmetric structure around the optical axis of the apparatus.
  • the biprism device is inserted in a direction perpendicular to the optical axis, and the deflection direction of the charged particle beam by the biprism device is a direction perpendicular to both the optical axis and the filament electrode. Therefore, an azimuth dependency with the optical axis as the center of rotation occurs in the optical system including the biprism device.
  • the positional relationship between the sample and the filament electrode has a degree of freedom of azimuth rotation about the optical axis as the rotation center. Therefore, in most cases, the biprism devices that are currently in practical use have a structure that includes a rotation mechanism for the orientation in a plane including the filament electrode (see Non-Patent Document 2).
  • FIG. 3 shows a one-electrode rotary biprism device body 80 (Non-patent Document 2).
  • (A) of the figure is a bird's-eye schematic diagram, and (b) is an external schematic diagram of a practical device.
  • the filament holder 93 to which the filament electrode 91 is fixed has an annular shape, and the outer periphery of the holder and the contact electrode 81 are in contact and electrically connected.
  • the contact electrode 81 is connected to a power source 95, and a potential is applied to the filament electrode 91 through the power source.
  • the filament electrode 91 and the annular filament holder 93 may be made of a non-conductive adhesive, such as an epoxy resin, as long as it is an adhesive 92 that can withstand vacuum when the whole is metal-coated after fixing the filament.
  • a parallel plate ground electrode 99 is disposed between the filament electrode 91 and the annular filament holder 93. Therefore, the azimuth rotation of the filament electrode 91 rotates together with the parallel plate ground electrode 99. In the absence of the parallel plate ground electrode, a potential exists also in the space between the filament electrode 91 and the annular filament holder 93, so that the deflection angle of the charged particle beam becomes small.
  • the entire apparatus can be finely moved in the X direction (axial direction perpendicular to the apparatus) and the Y direction (axial direction) in the figure to adjust the position of the filament electrode 91.
  • the biprism mechanism moves greatly in the Y-axis direction so that the biprism mechanism is separated from the charged particle beam.
  • the optical axis of the charged particle beam apparatus at this time is indicated by reference numeral 20.
  • the contact electrode 81 has a spring property as a cantilever structure, and secures a contact regardless of the azimuth rotation of the filament holder 93.
  • the biprism device shown in FIG. 3B has a shaft structure as a whole device, vibration modes unique to the device are different between the axial direction and the axial vertical direction.
  • the vibration amplitude in the axial direction is small, and the vibration amplitude in the vertical direction is large.
  • the filament electrode 91 is less affected by vibration in the axial direction of the filament, and more affected by vibration in the direction perpendicular to the filament. Therefore, as a result, the appearance of the influence of vibration differs depending on the azimuth angle of the filament electrode. That is, when the axis of the filament electrode is perpendicular to the axis of the biprism device, the influence of vibration is the smallest and the most stable against vibration.
  • 3A is drawn with this stable azimuth.
  • the difference in stability depending on the azimuth angle of the filament electrode 91 is an important implementation requirement. If the filament electrode can be operated at an azimuth angle perpendicular to the axis of the biprism device, the convenience of the biprism device is high.
  • the biprism device has a filament perpendicular to the optical axis of the charged particle beam device, and a plane whose normal is the axis perpendicular to both the optical axis and the filament, and sandwiches the filament.
  • the filament holder in which the filament is installed includes a first seat electrode and a second seat electrode with an insulating portion interposed therebetween, and an optical axis of the charged particle beam apparatus.
  • the filaments are respectively fixed to the first and second seat electrodes of the filament holder, and provided with a first contact electrode and a second contact electrode that contact the filament holder.
  • the first contact electrode is connected to the power source
  • the second contact electrode is connected to the biprism device
  • the first seat electrode is connected to the biprism device according to the rotation angle of the filament holder.
  • a state in which at least one of the two seat electrodes is in contact with the first contact electrode, or the first seat electrode is in contact with the first contact electrode, and the second seat electrode is the second contact electrode.
  • This preferred embodiment is a one-electrode biprism device having a filament electrode rotation mechanism, and allows a current to flow through the filament electrode with the configuration of one electrode.
  • heating by energization of the filament electrode becomes possible, and contamination adhered to the filament electrode is removed. Thereby, the local charge-up due to the adhesion of contamination disappears.
  • the operation period of the biprism device can be significantly extended because there is no damage such as peeling due to irradiation with a charged particle beam.
  • the orientation of one electrode that can take a state in which the filament electrode can be energized and the contamination attached to the filament electrode can be removed without losing the advantage that the orientation of the filament electrode can be rotated.
  • the biprism device has a filament orthogonal to the optical axis of the charged particle beam device and a pair of planes that are normal to an axis orthogonal to both the optical axis and the filament, and are disposed across the filament.
  • a first contact electrode connected to the power source and a second contact electrode, and at least one of the first seat electrode and the second seat electrode is brought into the first contact by rotation of the filament holder This is an embodiment of a biprism device that can take a state of being in contact with an electrode, or a state in which a first seating electrode is in contact with a first contact electrode and a second seating electrode is in contact with a second contact electrode.
  • FIG. 4 shows a schematic bird's-eye view of a configuration example of the biprism device of the first embodiment.
  • the biprism device of the present embodiment is newly provided with the following four unique configurations.
  • the filament holder to which the filament electrode 91 is fixed is composed of two seat electrodes 83 and 84 sandwiching an insulator.
  • the second seat electrode 84 is provided with a protrusion 86.
  • a second contact electrode 82 that contacts the protrusion 86 when the filament holder rotates is provided.
  • a conductive adhesive 92 is used to fix the filament 91 to the two seat electrodes 83 and 84.
  • the filament holder has a structure in which two seat electrodes 83 and 84 are connected by an insulating portion 85 made of an insulator.
  • the entire holder has an annular shape and has two first and second springs. It has sufficient rigidity not to be deformed even if it contacts with the contact electrodes 81, 82.
  • the protrusion 86 of the second seat electrode 84 has a structure that can contact either the first contact electrode 81 or the second contact electrode 82.
  • the two insulating portions 85 connecting the seat electrodes 83 and 84 of the filament holder are connected to the parallel plate ground electrode 99. It is located on the back side of the structure, so that it cannot be seen directly from the charged particle beam. That is, the insulating part is positioned on the back side as viewed from the optical axis of the parallel plate electrode.
  • the filament holder and the parallel plate ground electrode 99 are integrally rotated in the direction.
  • the parallel plate electrode may be connected to only one electrode or both electrodes to a separate power source or the like without grounding the parallel plate electrode, and may have a function of applying a single deflection to the charged particle beam.
  • the two contact electrodes 81 and 82 are drawn assuming a cantilever-type leaf spring shape, similar to the contact electrode 81 of the rotary biprism device of FIG. 3.
  • the shape is not limited, and may be a shape pressed by a coil spring from the back side of the electrode, or other shapes.
  • the first contact electrode 81 and the second contact electrode 82 only have to have a spring property that does not cause plastic deformation even if they contact the protrusion 86 provided on the second seat electrode 84.
  • the spring property that satisfies this condition also depends on the amount of protrusion, which is the size of the protrusion 86 of the second seat electrode, and therefore the size of the protrusion 86 of the second seat electrode together with the shape, size, and material of the contact electrode. It may be determined in consideration of such factors.
  • a first contact electrode 81 connected to a power source 95 for applying a potential to the filament electrode 91 and a second contact electrode 82 connected directly to the biprism device and grounded are the midpoint of the filament electrode 91 (ideal
  • the azimuth angle ⁇ between the first seat electrode 83 and the second seat electrode 84 of the filament holder is set in the filament electrode 91. It must be larger than the azimuth angle ⁇ formed by the point ( ⁇ > ⁇ ).
  • This condition is derived from a configuration requirement that the second seat electrode 84 is not connected to the first contact electrode 81 and the second contact electrode 82 alone. That is, this is a condition for preventing the power source from being short-circuited by the second seat electrode 84 having the protrusion 86 being independently connected to both contact electrodes.
  • both the angle ⁇ and the angle ⁇ described here are smaller azimuth angles as shown in FIG. That is, the angle on the smaller side between the first contact electrode and the second contact electrode and the middle point of the filament is that the two insulating portions between the first seat electrode and the second seat electrode are in the filament electrode. It is larger than the angle on the smaller side formed by the point.
  • FIG. 5 shows a range in which the second seat electrode 84 can be connected to the second contact electrode 82 by rotating the filament holder of the biprism device of this embodiment.
  • the filament electrode 91 can be energized within the azimuth angle range shown in FIGS.
  • FIG. 5 and subsequent drawings the azimuth angle ⁇ between the first contact electrode 81 and the second contact electrode 82 and the midpoint of the filament electrode 91 and the first seat electrode 83 are shown.
  • the two azimuth angles ⁇ formed by the two insulating portions 85 between the second seat electrode 84 and the middle point of the filament electrode 91 are drawn at right angles, but the angle is not limited to this.
  • the first seat electrode 83 is in contact with the first contact electrode 81 and the second seat electrode 84.
  • the filament electrode 91 can be heated by energizing with the power source 95 in the rotation angle range of rotation in contact with the second contact electrode 82, that is, the azimuth angle range.
  • the degree of heating at this time depends not only on the amount of current to flow and the energization time, but also on the material, cross-sectional area, and length of the filament electrode. For example, according to Non-Patent Document 3, when a filament wire diameter is about 0.6 ⁇ m, heating is performed at 600 ° C. for 4 minutes with an energization amount of about 300 ⁇ A. In the charged particle beam biprism devices developed so far, there is no great difference in the size of the filament electrode, so the above numerical value will be one operation index in the future.
  • the coating thickness of the filament electrode is about 1/10 of the filament wire diameter. It is about 5% of the area.
  • the power supply system can control the electric heating to the metal filament, it is at a sufficiently controllable level, and the filament electrode in the present application is not limited to the metal wire, and the glass wire is the same as the conventional filament electrode. Even a coated one can be implemented.
  • the filament electrode 91 has a small wire diameter
  • the voltage applied from the power source when energized is estimated to be 1 V or less
  • the applied potential to the biprism apparatus in normal electron holography is Compared with several tens of volts to 100 volts, it is quite small. That is, in the biprism device of the present embodiment, the possibility of using it as a biprism is low while being energized.
  • the rotation angle range in which the filament electrode 91 can be energized depends on the size and shape of the second contact electrode 82. In this range, when a potential for use as a biprism (approx. 10V to 100V) is applied, the filament burns out. However, in the case of the amount of current heated to about 600 ° C., as described above, a predetermined potential cannot be applied and it is impossible to use as a biprism. Therefore, when the angle range in which the filament electrode 91 can be energized is large, the angle range that does not function as the original biprism becomes large. Therefore, it is appropriate that the rotation angle range of rotation capable of energizing the filament electrode 91, that is, the azimuth angle range is 90 ° or less.
  • a current can be passed through the filament electrode with the configuration of one electrode. It becomes possible. As a result, heating by energization of the filament electrode becomes possible, and contamination adhered to the filament electrode is removed. Thereby, the local charge-up due to the adhesion of contamination disappears. That is, the filament electrode can be reused, and the operating life of the biprism device can be extended.
  • FIG. 6 shows a configuration example of the biprism device of the second embodiment.
  • FIG. 6 is a diagram that forms a pair with FIG. 5.
  • the azimuth angle of the filament electrode 91 is drawn so as to match those of (a) and (b) of FIG.
  • FIG. 6 illustrates a method and a configuration in which the biprism device is used at the azimuth angle of the filament electrode that is determined to be unusable as a biprism device due to energization of the filament electrode 91 in the first embodiment.
  • the azimuth angle for energization can be used as a biprism by using the azimuth angle (rotational symmetry position) obtained by rotating the filament electrode 91 by 180 °.
  • the filament electrode can be operated as a biprism device in all directions even when the energization function is provided.
  • FIG. 7 shows a configuration example of the bi-prism device according to the third embodiment.
  • the first contact electrode has a branch structure, and the rotation angle at which both the first seat electrode and the second seat electrode contact the first contact electrode having the branch structure, that is, It is an Example of the biprism apparatus of the structure which has an angle range of an azimuth.
  • Fig. 7 (a) shows the state of the electrically floating problem
  • Fig. 7 (b) shows a state where a potential is applied from the branch electrode
  • Fig. 7 (c) shows that both seat electrodes are connected to the contact electrode. Indicates the state.
  • FIG. 7A shows the case where the filament holder insulating portion 85 has an azimuth angle at which the first contact electrode 81 is in contact.
  • the filament electrode 91 is in an electrically floating state, and not only the filament electrode 91 cannot be energized but also has a potential as the biprism device 9. It cannot be applied.
  • the situation in which the filament electrode 91 is electrically floated occurs specifically at the azimuth angle because the filament holder is provided with the insulating portion 85. As shown in FIG. 7, this problem can be avoided by providing the protrusion 86 provided in the second contact electrode 82 in the vicinity of the insulating portion 85 as shown in FIG. 7.
  • FIG. 7A shows a state in which the remaining insulating portion 85 is in contact with the first contact electrode 81 and the filament electrode 91 is in an electrically floating state.
  • the remaining problem can be avoided by providing a branch structure on the first contact electrode 81 as shown in FIG. That is, the protrusion 86 provided on the second seat electrode 84 is connected to the branch electrode 88 at azimuth angles before and after the situation where the insulating portion 85 contacts the first contact electrode 81. If the width of the branch electrode 88 is configured to be somewhat large, the outer peripheral width where the branch electrode 88 and the protrusion 86 are in contact with each other can be made larger than the outer peripheral width of the annular filament holder of the insulating portion 85. Yes, this problem is completely solved.
  • FIG. 7 depicts a case where the second seat electrode 84 is provided and the projection 86 contacts the first contact electrode 81.
  • the first contact electrode 81 is elastically deformed by the size of the protrusion 86, but the connection portion between the first contact electrode 81 and the branch electrode 88 is used as a fulcrum 87 as shown in FIG. If the configuration is such that the angle can be changed, the branch electrode 88 can be connected to the first contact electrode 81, and a potential can be applied to the filament electrode 91 more stably.
  • both insulating portions are in contact with each other by only one protruding portion. Contact with the electrode can be avoided. However, in this case, it is difficult to position the insulating portion on the back side of the parallel plate ground electrode, and a separate charge-up prevention measure is required for the insulating portion. As described above, since the filament electrode is very thin and has a low mechanical strength, a more delicate design and handling work is required to prevent charge-up.
  • the method shown in the third embodiment not only can the situation in which the filament electrode generated by the insulating portion of the filament holder floats electrically is avoided, but also the potential can be more stably applied to the filament electrode. It becomes. As a result, it is possible to apply a potential to the filament electrode over all azimuth angles, and even with a single-electrode rotary biprism device, it is possible to energize the filament electrode with a single electrode configuration. In addition, the biprism device can be used in all directions without hindrance.
  • FIG. 8 is a schematic diagram of a configuration example of the entire system of the electron beam interference apparatus according to the fourth embodiment.
  • FIG. 8 schematically illustrates the entire system in the case of an electron beam interference optical system assuming a general-purpose electron microscope having an acceleration voltage of about 300 kV, but is not limited to an electron microscope having this configuration. .
  • the electron gun 1 as an electron source is positioned at the most upstream part in the direction in which the electron beam flows.
  • the electron beam is brought to a predetermined speed by the acceleration tube 40 and then passed through the condenser lenses 41 and 42 which are irradiation optical systems.
  • the sample 3 is irradiated with the intensity adjusted to the irradiation area.
  • the electron beam that has passed through the sample 3 is imaged by the objective lens 5.
  • This imaging action is taken over by the imaging lens systems 61, 62, 63, 64 downstream of the objective lens 5 and finally imaged on the observation recording surface 75 of the electron beam apparatus.
  • the image passes through a recording medium 79 such as a CCD camera and a controller 78, and is observed on, for example, an image data monitor 76 screen or stored as image data in a recording device 77.
  • the biprism device 9 is disposed between the image plane of the light source 1 by the objective lens 5 and the image plane of the sample 3 by the objective lens 5 and is operated so as to superimpose an electron beam below the filament 91.
  • the superimposed portion of the electron beam by the biprism is magnified by the imaging lens systems 61, 62, 63, and 64 at the latter stage of the objective lens together with the sample image, and is imaged on the observation recording surface 75.
  • Control unit 39 second irradiation lens control unit 47, first irradiation lens control unit 48, acceleration tube control unit 49, objective lens control unit 59, fourth imaging lens control unit 66, third imaging
  • control units such as a lens control unit 67, a second imaging lens control unit 68, a first imaging lens control unit 69, an image recording medium control unit 78, and a biprism device control unit 98.
  • Electron source 1, acceleration tube 40, lenses 41, 42, 5, 61, 62, 63, 64, test 3 can be controlled and the detector 79 or the like.
  • this invention is not limited to the above-mentioned Example, Various modifications are included.
  • the case where the second contact electrode is connected to the biprism device main body has been shown, but it is sufficient that the second contact electrode can be grounded, and the charged particle beam device main body may be used.
  • this invention may be used for a scanning electron microscope and may be used for an ion microscope. At that time, it goes without saying that the configuration of the optical system is changed based on each device.
  • the assumed charged particle beam apparatus is equipped with a charged particle beam deflection system, an evacuation system, etc., which are not directly related to the present application. Omitted.
  • control unit or control system computer that operates a program that realizes part or all of them, part or all of them are used.
  • it may be realized by hardware, for example, by designing with an integrated circuit. That is, all or part of the functions of the control unit may be realized by an integrated circuit such as ASIC (Application Specific Integrated Circuit) or FPGA (Field Programmable Gate Array) instead of the program.
  • ASIC Application Specific Integrated Circuit
  • FPGA Field Programmable Gate Array
  • Electron source or electron gun 11 Light source image formed by objective lens (crossover) 18 Vacuum container 19 Electron source control unit 2 Optical axis 20 Optical axis when biprism device is not used 21 Object wave 22 Electron wavefront 23 Reference wave 27 Electron trajectory 3 Sample 31 Sample imaged by objective lens Image 39 Sample control unit 4 Irradiation optical system 40 Acceleration tube 41 First irradiation (condenser) lens 42 Second irradiation (condenser) lens 47 Second irradiation lens control unit 48 First irradiation lens control unit 49 Acceleration tube Control unit 5 Objective lens 51 Control system computer 52 Control system computer monitor 53 Control system computer interface 59 Objective lens control unit 61 First imaging lens 62 Second imaging lens 63 Third imaging lens 64 Fourth imaging Lens 66 Fourth imaging lens control unit 67 Third imaging lens control unit 6 Second imaging lens control unit 69 First imaging lens control unit 71 Sample image plane 75 by objective lens Observation recording surface 76 Image data monitor 77 Image recording device 78 Image recording medium control unit 79 Image observation /

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Abstract

Dans la présente invention, lorsque des contaminants adhèrent, une charge localisée est produite dans une partie du contaminant adhérent, et l'utilisation d'un dispositif de biprisme est évitée. Un dispositif de biprisme rotatif dans lequel un support de filament sur lequel une électrode de filament (91) est installée est configuré pour comprendre deux électrodes de siège (83), (84), une saillie (86) étant prévue sur l'une des électrodes de siège (84). Lorsque ledit dispositif doit être utilisé en tant que dispositif de biprisme, il est ainsi possible d'adopter : un état dans lequel un potentiel est appliqué à une électrode de filament (91) par l'intermédiaire d'une électrode de contact (81) connectée à une source d'alimentation (95) ; et un état dans lequel, lorsque l'électrode de filament doit être nettoyée par chauffage électrique, l'électrode de siège (84) munie de la saillie vient en contact avec une électrode de contact (82) directement connectée au dispositif, moyennant quoi un circuit fermé comprenant l'électrode de filament est formé, l'électrode de filament est chauffée en étant excitée, et des contaminants adhérents sont éliminés.
PCT/JP2016/087541 2015-12-24 2016-12-16 Dispositif de biprisme et dispositif à faisceau de particules chargées WO2017110673A1 (fr)

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JP2015251027A JP6614492B2 (ja) 2015-12-24 2015-12-24 バイプリズム装置、及び荷電粒子線装置

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US20230223232A1 (en) * 2020-06-18 2023-07-13 Riken Electron microscope analysis system

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JPH0414744A (ja) * 1990-05-09 1992-01-20 Hitachi Ltd 電子線ホログラフィ装置
US5811806A (en) * 1995-09-12 1998-09-22 Jeol Ltd. Electron-beam biprism
JPH1140097A (ja) * 1997-07-23 1999-02-12 Hitachi Ltd 電子線干渉装置
JP2001325913A (ja) * 2000-05-19 2001-11-22 Jeol Ltd 電子線バイプリズム装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414744A (ja) * 1990-05-09 1992-01-20 Hitachi Ltd 電子線ホログラフィ装置
US5811806A (en) * 1995-09-12 1998-09-22 Jeol Ltd. Electron-beam biprism
JPH1140097A (ja) * 1997-07-23 1999-02-12 Hitachi Ltd 電子線干渉装置
JP2001325913A (ja) * 2000-05-19 2001-11-22 Jeol Ltd 電子線バイプリズム装置

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