WO2017096775A1 - 半导体加工设备 - Google Patents

半导体加工设备 Download PDF

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Publication number
WO2017096775A1
WO2017096775A1 PCT/CN2016/086205 CN2016086205W WO2017096775A1 WO 2017096775 A1 WO2017096775 A1 WO 2017096775A1 CN 2016086205 W CN2016086205 W CN 2016086205W WO 2017096775 A1 WO2017096775 A1 WO 2017096775A1
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WIPO (PCT)
Prior art keywords
shaft portion
passage
chamber
movable member
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/086205
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English (en)
French (fr)
Inventor
赵隆超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing NMC Co Ltd
Original Assignee
Beijing NMC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing NMC Co Ltd filed Critical Beijing NMC Co Ltd
Priority to SG11201804216RA priority Critical patent/SG11201804216RA/en
Publication of WO2017096775A1 publication Critical patent/WO2017096775A1/zh
Priority to US16/004,655 priority patent/US10985034B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations

Definitions

  • the present invention relates to the field of semiconductor manufacturing, and in particular to a semiconductor processing apparatus.
  • Plasma processing equipment is widely used in the manufacturing process of integrated circuits (ICs) or MEMS devices, which utilizes a large number of active particles of electrons, ions, excited atoms, etc., to undergo various physical and chemical reactions with the surface of the substrate. Thereby the performance of the surface of the substrate is changed.
  • ICs integrated circuits
  • MEMS devices which utilizes a large number of active particles of electrons, ions, excited atoms, etc., to undergo various physical and chemical reactions with the surface of the substrate. Thereby the performance of the surface of the substrate is changed.
  • the air intake mechanism it is common for the air intake mechanism to provide a corresponding working gas for generating plasma.
  • a plasma processing apparatus includes a reaction chamber 100 and an air intake device, wherein a chuck 101 for carrying a substrate is disposed in the reaction chamber 100.
  • the air intake device includes a center nozzle 102 and an edge air intake mechanism, wherein the center nozzle 102 is disposed at a center position of the top of the reaction chamber 100;
  • the edge air intake mechanism includes an air inlet 106, a flow chamber 105, and a plurality of air outlets 107, wherein the flow chamber 105 is formed by two cover plates (103, 104) disposed around the top of the side wall of the reaction chamber 100, each of the cover plates (103, 104) being axially along the reaction chamber 100
  • the cross-sectional shape is "L" shape, the two cover plates (103, 104) are fastened to each other to form a flow chamber 105; the air inlet 106 is used to transport the process gas to the flow chamber 105; the plurality of air outlets 107 are evenly distributed
  • the circumference shape is "L" shape, the two cover plates
  • the plasma processing apparatus described above can be applied to a process in which two different process gases are required to be alternately introduced into the reaction chamber, such as a BOSCH process, in which a deposition gas and an etching gas are alternately introduced into the reaction chamber.
  • a BOSCH process in which a deposition gas and an etching gas are alternately introduced into the reaction chamber.
  • the first process gas is delivered to the reaction chamber 100 through the center nozzle 102, and the second process gas is sequentially passed through the air inlet. 106.
  • the flow chamber 105 and the respective gas outlets 107 are delivered into the reaction chamber 100.
  • the edge inlet mechanism after it completes the delivery of the second process gas, a portion of the process gas remains in the interior of the flow chamber 105, and when the edge inlet mechanism is not used, due to the flow chamber 105
  • the respective outlets 107 are always in communication with the reaction chamber 100, such that the second process gas remaining inside the flow chamber 105 enters the reaction chamber 100 and mixes with the first process gas, resulting in a reaction chamber.
  • the composition of the gas within 100 changes, which affects process uniformity.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a semiconductor processing apparatus which can avoid leaving the inside of the shimming chamber when two different process gases are alternately introduced into the reaction chamber.
  • the process gas enters the reaction chamber to ensure process uniformity.
  • a semiconductor processing apparatus comprising a reaction chamber, a central air intake mechanism and an edge air intake mechanism, wherein the central air intake mechanism is disposed at a center position of a top portion of the reaction chamber
  • the edge air intake mechanism includes an air inlet, a flow chamber, and at least one air outlet, wherein the flow chamber is circumferentially disposed at an edge of the top of the reaction chamber along a circumference of the reaction chamber
  • the inlet port is in communication with the flow mixing chamber for conveying a process gas to the flow mixing chamber; the at least one gas outlet is disposed between the reaction chamber and the flow mixing chamber.
  • each of the air outlets is provided with an on-off device for connecting the flow chamber to the reaction chamber when the process gas is delivered to the flow chamber through the air inlet Or, the flow chamber is isolated from the reaction chamber when the process gas is not delivered to the flow chamber.
  • the on-off device comprises a fixed component, a movable component and an elastic component.
  • the fixing member and the movable member block the air outlets, and the two are disposed opposite to each other along the axial direction of the air outlet, the movable member is close to the air inlet end of the air outlet, and the fixing component is close to the air outlet An outlet end of the gas port; and the fixing member has a first passage; the outlet end of the first passage is always in communication with the reaction chamber; and the elastic member is disposed at the movable member and the fixed member Between the two, the two are elastically connected, and one end of the movable member is exposed in the internal environment of the vortex chamber, so that when the process gas is delivered to the vortex chamber through the air inlet, the movable member Capable of changing the position of the elastic member by pressing the elastic member under the pressure of the internal environment of the vortex chamber, so that the intake end of the first passage communicates with the merging chamber; When the process gas is not delivered to the vortex chamber, the mov
  • the fixing member comprises an end portion and a shaft portion.
  • the end portion is sealed at an air outlet end of the air outlet;
  • the shaft portion is columnar, one end of the shaft portion is connected to the end portion, and is located at a center position of the end portion, the shaft
  • the other end of the portion extends horizontally toward the intake end of the air outlet;
  • the intake end of the first passage is located on the outer peripheral wall of the shaft portion, and the outlet end of the first passage is located at the end of the end portion
  • the movable member is annular and sleeved on the shaft portion, and an inner peripheral wall of the movable member is slidably engaged with an outer peripheral wall of the shaft portion;
  • the elasticity A member is sleeved on the shaft portion and located between the end portion and an end surface of the movable member.
  • the first passage has a plurality of intake ends and is symmetrically distributed along the circumferential direction of the shaft portion.
  • the fixing member comprises an end portion and a shaft portion.
  • the end portion is sealed at an air outlet end of the air outlet;
  • the shaft portion is annular, and an outer peripheral wall of the shaft portion is matched with an inner wall of the air outlet;
  • the end portion is connected, the other end of the shaft portion extends horizontally toward the intake end of the air outlet;
  • the intake end of the first passage is located on the inner peripheral wall of the shaft portion, and the air outlet of the first passage
  • An end is located on an inner side wall of the end portion facing the reaction chamber;
  • the movable member is columnar and nested within the shaft portion, and an outer peripheral wall of the movable member and an inner peripheral wall of the shaft portion a sliding fit;
  • the elastic member is located at the shaft portion
  • the inner side is located between the end and the end surface of the movable member.
  • the first channel is a plurality of strips and is symmetrically distributed along a circumferential direction of the shaft portion.
  • the on-off device comprises a fixed component, a movable component and an elastic component.
  • the fixing member and the movable member block the air outlets, which are oppositely disposed along an axial direction of the air outlet, the movable member is close to an air inlet end of the air outlet, and the fixing member is close to the air outlet And an outlet member;
  • the fixed member has a first passage, the movable member has a second passage; an outlet end of the first passage is always in communication with the reaction chamber, and the intake of the first passage The end is always in communication with the outlet end of the second passage;
  • the elastic member is disposed between the movable member and the fixed member to elastically connect the two, and one end of the movable member is exposed to the uniform
  • the movable member is capable of squeezing the elasticity under the pressure of the internal environment of the flow chamber when the process gas is delivered to the flow chamber through the air inlet
  • the component is deformed to change its position such that the intake end of the second passage communicates
  • the fixing member comprises an end portion and a shaft portion.
  • the end portion is sealed at an air outlet end of the air outlet;
  • the shaft portion is columnar and horizontally disposed, and one end of the shaft portion is connected to the end portion and is located at a center position of the end portion
  • the other end of the shaft portion extends horizontally toward the intake end of the air outlet;
  • the intake end of the first passage is located on an outer peripheral wall of the shaft portion, and the air outlet end of the first passage is located at The end portion faces the inner side wall of the reaction chamber;
  • a matching hole is disposed on a surface of the movable member opposite to the shaft portion, the matching hole is matched with the shaft portion;
  • the second a passage is located outside the fitting hole, and an outlet end of the second passage is located on a surface of the movable member opposite to the end;
  • a peripheral wall of the movable member is slidably engaged with an inner wall of the air outlet And correspondingly disposed on the inner wall of the movable member
  • the second channel is a plurality of strips and is symmetrically distributed around the mating holes.
  • the first passage has a plurality of intake ends and is symmetrically distributed along the circumferential direction of the shaft portion.
  • the number of the air outlets is plural, and is evenly distributed along the circumferential direction of the flow mixing chamber.
  • the elastic member includes a spring or a bellows.
  • the semiconductor processing apparatus provided by the present invention is provided with a central air intake mechanism and an edge air intake mechanism at a center position and an edge position of a top portion of the reaction chamber, respectively, and the central air intake mechanism and the edge air intake mechanism are connected to different process gas sources and mutually Alternatingly transferring the other to the reaction chamber, and each of the air outlets of the edge air intake mechanism is provided with an on/off device, by means of which the edge air intake mechanism is transported to the flow chamber during the process gas
  • the flow chamber is connected to the reaction chamber under the pressure of the internal environment of the flow chamber; or, under the pressure of the internal environment of the flow chamber of the edge air intake mechanism, when the process gas is not transported to the flow chamber
  • the flow chamber is isolated from the reaction chamber, so that when the central air intake mechanism supplies gas to the reaction chamber, the process gas remaining in the flow chamber is prevented from entering the reaction chamber, thereby ensuring process uniformity and products. Yield.
  • FIG. 1 is a schematic structural view of a conventional plasma processing apparatus
  • FIG. 2A is a cross-sectional view of a semiconductor processing apparatus according to a first embodiment of the present invention
  • Figure 2B is an enlarged view of the area I of Figure 2A when no gas is introduced;
  • Figure 2C is an enlarged view of the area I in Figure 2A when the gas is introduced;
  • 3A is a view showing the on-off device used in the second embodiment of the present invention when no gas is introduced; Large picture
  • 3B is an enlarged view of the on-off device used in the second embodiment of the present invention when a gas is introduced;
  • FIG. 4A is an enlarged view of the on-off device used in the third embodiment of the present invention when no gas is introduced;
  • Fig. 4B is an enlarged view of the on-off device used in the third embodiment of the present invention when a gas is introduced.
  • the semiconductor processing apparatus includes a reaction chamber 200, a central air intake mechanism 202, and an edge air intake mechanism, wherein a chuck 201 for carrying a workpiece to be processed is disposed in the reaction chamber 200.
  • the central air intake mechanism 202 is disposed at a central position of the top of the reaction chamber 200.
  • the edge air intake mechanism is disposed at an edge position of the top of the reaction chamber 200.
  • the semiconductor processing apparatus provided by the embodiments of the present invention can be applied to a process in which two different process gases need to be alternately introduced into the reaction chamber, for example, alternately, the first process gas is delivered to the reaction chamber through the central air intake mechanism 202. Within chamber 200, a second process gas is delivered to reaction chamber 200 through an edge intake mechanism.
  • the edge air intake mechanism in this embodiment will be described in detail below.
  • the edge air intake mechanism includes an air inlet 206, a flow chamber 203, and a plurality of air outlets 207.
  • the flow chamber 203 is formed by two cover plates (204, 205) disposed around the top of the side wall of the reaction chamber 200, specifically, each of the cover plates (204, 205) along the reaction chamber 200
  • the cross-sectional shape in the half-sectional view in the axial direction is "L"-shaped, and the two cover plates (204, 205) are overlapped and joined to each other to form a doubling chamber 203.
  • the air inlet 206 communicates with the flow plenum 203 and extends through the cover plate 204 for transporting process gases from outside the reaction chamber into the flow chamber 203.
  • the plurality of air outlets 207 are evenly distributed along the circumferential direction of the flow chamber 203, and each air outlet 207 penetrates the cover plate 204 in the radial direction of the flow chamber 203 for conveying the process gas in the flow chamber 203 to the reaction chamber.
  • an opening and closing device 208 is disposed in each of the air outlets 207 for making the flow of the gas in the flow chamber 203 under the action of the air pressure in the flow chamber 203 when the process gas is transported into the flow chamber 203 through the air inlet 206.
  • the chamber 203 is in communication with the reaction chamber 200; or, when the process gas is not transported into the flow chamber 203, the flow chamber 203 is isolated from the reaction chamber 200 by the air pressure in the flow chamber 203.
  • FIG. 2B is an enlarged view of the area I in FIG. 2A when no gas is introduced
  • FIG. 2C is an enlarged view of the area I in FIG. 2A when the gas is introduced.
  • the switching device 208 includes a fixing member, a movable member 304, and a compression spring 305, wherein the fixing member and the movable member 304 block the air outlet 207, which are disposed opposite each other along the axial direction of the air outlet 207.
  • the fixing member includes an end portion 301 and a shaft portion 302 that is closed at the air outlet end of the air outlet 207 (the left end of the air outlet 207 in FIG. 2B); the shaft portion 302 has a columnar shape, and the shaft portion 302 One end (the left end of the shaft portion 302 in Fig. 2B) is connected to the end portion 301, and is located at the center position of the end portion 301, and the other end of the shaft portion 302 faces the intake end of the air outlet port 207 (out of Fig. 2B) The right end of the port 207 extends horizontally.
  • the fixing member has a first passage 303, and the outlet end of the first passage 303 (the left end of the first passage 303 in Fig. 2B) is located on the inner side wall of the end portion 301 facing the reaction chamber 200, the inner side wall being exposed In the internal environment of the reaction chamber 200, thereby always reacting
  • the chambers 200 are in communication; the intake end of the first passage 303 (the right end of the first passage 303 in FIG. 2B) is located on the outer peripheral wall of the shaft portion 302, the number of the intake ends being plural, and along the shaft portion 302
  • the circumferential direction is symmetrically distributed, so that the intake efficiency can be improved.
  • the movable member 304 is annular and sleeved on the shaft portion 302, and the inner peripheral wall of the movable member 304 is slidably engaged with the outer peripheral wall of the shaft portion 302.
  • the compression spring 305 is sleeved on the shaft portion 302 and is located between the end portion 301 and the end surface of the movable member 304 (the left end surface of the movable member 304 in FIG. 2B), so that the movable member 304 is realized by the compression spring 305 and the fixed member.
  • the elastic connection is made and the positional change of the movable part 304 relative to the fixed part is caused by the elastic deformation of the compression spring 305. As shown in FIG.
  • the compression spring 305 is substantially in the original state (i.e., the compression spring 305 remains substantially free in length), at which point the movable member 304 is positioned sufficient to enclose the respective intake ends of the first passage 303, thus,
  • the central air intake mechanism 202 transports the process gas to the reaction chamber 200, the process gas remaining in the flow chamber 203 can be prevented from entering the reaction chamber 200, thereby ensuring process uniformity and product yield.
  • the gas pressure in the flow chamber 203 gradually rises, and when the gas pressure rises to a pressure applied to the movable member 304, the pressure is greater than the compression spring 305.
  • the movable member 304 starts to compress the compression spring 305 to cause elastic deformation, that is, the movable member 304 slides to the left as the compression spring 305 deforms until the respective intake ends of the first passage 303 are converge.
  • the chambers 203 are in communication.
  • the process gas in the flow chamber 203 enters the first passage 303 through the respective intake ends of the first passage 303, and then enters the reaction chamber 200 through the outlet end of the first passage 303, the flow of the process gas.
  • the direction is shown by the arrow in Figure 2C.
  • the intake end of the first passage 303 is plural and evenly distributed along the circumferential direction of the shaft portion 302, but the present invention is not limited thereto, and in practical applications, multiple The intake end does not have to be evenly distributed along the circumferential direction of the shaft portion 302; or the intake end of the first passage may be one.
  • FIG. 3A is an enlarged view of the on-off device used in the second embodiment of the present invention when no gas is introduced
  • FIG. 3B is an on-off according to the second embodiment of the present invention.
  • the semiconductor processing apparatus provided in this embodiment also includes a reaction chamber, a central air intake mechanism, and an edge air intake mechanism, and is disposed in each air outlet, as compared with the first embodiment. Switching device. Since the structure and function of the above mechanism or device have been described in detail in the first embodiment, no further details are provided herein. Only the differences between the present embodiment and the above-described first embodiment will be described in detail below.
  • the switching device used in the embodiment includes a fixing component, a movable component 404 and a compression spring 405, wherein the fixing component and the movable component 404 block the air outlet 207, which are oppositely disposed along the axial direction of the air outlet 207, and The movable member 404 is located outside the fixed member.
  • the fixing member includes an end portion 401 and a shaft portion 402, wherein the end portion 401 is sealed at the air outlet end of the air outlet 207; the shaft portion 402 is annular, and the outer peripheral wall of the shaft portion 402 and the air outlet 207 The inner wall cooperates; one end of the shaft portion 402 is coupled to the end portion 401, and the other end of the shaft portion 402 extends horizontally toward the intake end of the air outlet port 207.
  • the fixing member has one or more first passages 403.
  • the plurality of first passages 403 are symmetrically distributed along the circumferential direction of the shaft portion 402, thereby improving intake efficiency and intake air. Uniformity.
  • the outlet end of each of the first passages 403 is located at the end 401 toward the inner side wall of the reaction chamber 200, the inner side wall being exposed in the internal environment of the reaction chamber 200, so that the outlet end of each of the first passages 403 is always The reaction chambers 200 are in communication; the intake end of the first passage 403 is located on the inner peripheral wall of the shaft portion 402.
  • the movable member 404 is columnar and nested within the shaft portion 402, and the outer peripheral wall of the movable member 404 is slidably engaged with the inner peripheral wall of the shaft portion 402.
  • the compression spring 405 is located inside the shaft portion 402 and between the end portion 401 and the end surface of the movable member 404, so that the movable member 404 is elastically coupled to the fixed member by the compression spring 405, and is made movable by the elastic deformation of the compression spring 405.
  • Component 404 produces a change in position relative to the stationary component. As shown in FIG.
  • the gas pressure in the flow chamber 203 gradually rises, and when the gas pressure rises to a pressure applied to the movable member 404, the pressure is greater than the compression spring 405.
  • the movable member 404 starts to compress the compression spring 405 to elastically deform, that is, the movable member 404 slides to the left as the compression spring 405 deforms until the respective intake ends of the first passage 403 are converge.
  • the chambers 203 are in communication.
  • the process gas in the flow chamber 203 enters the first passage 403 through the respective intake ends of the first passage 403, and then enters the reaction chamber 200 through the outlet end of the first passage 403, the flow of the process gas.
  • the direction is shown by the arrow in Figure 3B.
  • the air pressure in the ration chamber 203 is lowered, so that the movable member 404 is reset by the elastic force of the compression spring 405, that is, returns to the position in FIG. 3A to re-enable
  • the respective intake ends of the first passage 403 are isolated from the flow equalization chamber 203.
  • the first channel 403 is multiple and evenly distributed along the circumferential direction of the shaft portion 402, but the present invention is not limited thereto. In practical applications, the plurality of first channels 403 It is also not necessary to evenly distribute along the circumferential direction of the shaft portion 402; or, the first passage 403 can be one.
  • FIG. 4A is an enlarged view of the on-off device used in the third embodiment of the present invention when no gas is introduced
  • FIG. 4B is an on-off device according to a third embodiment of the present invention.
  • the semiconductor processing apparatus provided in this embodiment also includes a reaction chamber, a central air intake mechanism, and an edge air intake mechanism, and each of the air outlets is provided with a pass. Broken device. Since the structure and function of the above mechanism or device have been described in detail in the first embodiment, no further details are provided herein. Only the differences between the present embodiment and the above-described first embodiment will be described in detail below.
  • the switching device 208 used in this embodiment includes a fixing component, a movable component 504 and a compression spring 505, wherein the fixing component and the movable component 504 block the air outlet 207, and the two are oppositely disposed along the axial direction of the air outlet 207.
  • the movable member 504 is close to the intake end of the air outlet 207, and the fixed member is close to the air outlet of the air outlet 207.
  • the fixing member includes an end portion 501 and a shaft portion 502, wherein the end portion 501 is closed at the air outlet end of the air outlet 207; the shaft portion 502 is columnar and horizontally disposed, and one end and end portion 501 of the shaft portion 502 The connection is located at a central position of the end portion 501; the other end of the shaft portion 502 extends horizontally toward the intake end of the air outlet 207.
  • the fixing member has a first passage 503, and the outlet end of the first passage 503 is located on the inner side wall of the end portion 501 facing the reaction chamber 200, the inner side wall being exposed in the internal environment of the reaction chamber 200, thereby A passage 503 is always in communication with the reaction chamber 200; the intake end of the first passage 503 is located on the outer peripheral wall of the shaft portion 502, the number of the intake ends being plural, and symmetrically distributed along the circumferential direction of the shaft portion 502, thereby It can improve intake efficiency and intake air uniformity.
  • a fitting hole is provided on a surface of the movable member 504 opposite to the shaft portion 502, and the fitting hole is engaged with the shaft portion 502.
  • the movable member 504 has one or more second passages 506 and is located outside the fitting hole, and the plurality of second passages 506 are symmetrically distributed around the fitting holes, so that the intake efficiency and the intake uniformity can be improved.
  • the outlet end of each second passage 506 is located The surface of the moving member 504 opposite the end portion 501 is such that the intake end of the first passage 503 is always in communication with the outlet end of the second passage 506.
  • the outer peripheral wall of the movable member 504 is slidably engaged with the inner wall of the air outlet 207, and a concave portion 508 is formed at an end portion of the movable member 504 close to the flow plenum 203, and a convex portion 507 is provided on the inner wall of the air outlet 207 corresponding to the concave portion 508.
  • the intake end of the second passage 506 is located on a surface of the recess 508 that mates with the projection 507.
  • the compression spring 505 is located in the fitting hole and extends between the end surface (right end) of the shaft portion 502 and the bottom surface of the fitting hole, that is, the compression spring 505 extends in the axial direction of the shaft portion 502, and the movable member 504 can be realized by the compression spring 505. Flexible connection to the fixed part. As shown in FIG.
  • the movable member 504 starts to compress the compression spring 505 to elastically deform, that is, the movable member 504 slides to the left as the compression spring 505 deforms until the concave portion 508 and the convex portion 507 are separated from each other, that is, the movable member
  • the rightmost end of the 504 is closer to the inner side wall of the end portion 501 than the leftmost end of the convex portion 507, so that a gap is formed between the rightmost end of the movable member 504 and the leftmost end of the convex portion 507, so that the intake end of the second passage 506 is
  • the flow chambers 203 are in communication.
  • the process gas in the vortex chamber 203 enters the second passage 506 through the intake end of the second passage 506, and enters the outlet member 504 through the outlet end of the second passage 506 and is located at the movable member 504. Between ends 501 The space enters the first passage 503 through the respective intake ends of the first passage 503 and enters the reaction chamber 200 through the outlet end of the first passage 503.
  • the direction of gas flow of the process gas is shown by the arrows in Figure 4B.
  • the present invention is not limited thereto, and other forms of elastic members such as bellows may be employed as long as the elastic member is used. It can be satisfied that the elastic member can generate an elastic deformation sufficient to make the flow chamber and the reaction chamber communicate when the flow chamber is ingested, and does not deform when the flow chamber is not ingested or The resulting deformation is insufficient to allow the turbulent chamber to communicate with the reaction chamber.
  • the semiconductor processing apparatus provided by the above various embodiments of the present invention is provided with a central air intake mechanism and an edge air intake mechanism, a central air intake mechanism and an edge air intake, respectively, at a center position and an edge position of a top portion of the reaction chamber.
  • the mechanism connects different process gas sources and alternates to each other to the reaction chamber, and each of the air outlets of the edge air intake mechanism is provided with an on-off device, by means of which the transfer device is transported to the uniform flow chamber
  • the flow chamber is connected to the reaction chamber under the pressure of the internal environment of the vortex chamber of the edge air intake mechanism; or, when the process gas is not transported to the flow chamber, the air inlet mechanism is evenly distributed. Under the pressure of the internal environment of the flow chamber, the flow chamber is isolated from the reaction chamber, so that when the central air intake mechanism supplies gas to the reaction chamber, the process gas remaining in the flow chamber is prevented from entering the reaction chamber. This ensures process uniformity and product yield.

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Abstract

一种半导体加工设备，包括反应腔室（200）、中央进气机构（202）和边缘进气机构。边缘进气机构包括进气口（206）、匀流腔（203）和至少一个出气口（207），进气口（206）与匀流腔（203）连通，用以将工艺气体输送至匀流腔（203）；至少一个出气口（207）设置在反应腔室（200）和匀流腔（203）之间，其中，在每一个出气口（207）内均设置有通断装置（208），用以在通过进气口（206）向匀流腔（203）输送工艺气体时，使匀流腔（203）与反应腔室（200）相连通；在不向匀流腔（203）输送工艺气体时，使匀流腔（203）与反应腔室（200）相隔离。该半导体加工设备，其在将两种不同的工艺气体交替通入反应腔室（200）时，在中央进气机构（202）向反应腔室（200）输送工艺气体时，能够避免匀流腔（203）内存留的工艺气体进入到反应腔室（200）内，从而可以保证工艺的均匀性及产品良率。

Description

半导体加工设备 技术领域
本发明涉及半导体制造领域，具体地，涉及一种半导体加工设备。
背景技术
等离子体加工设备广泛地应用于集成电路(IC)或MEMS器件的制造工艺中，其利用大量的电子、离子、激发态的原子等的活性粒子，与衬底表面发生各种物理和化学反应，从而使衬底表面的性能获得变化。在集成电路的制造工艺过程中，通常由进气机构负责为产生等离子体提供相应工作气体。
图1为现有的等离子体加工设备的结构示意图。请参阅图1，等离子体加工设备包括反应腔室100和进气装置，其中，在反应腔室100内设置有用于承载衬底的卡盘101。进气装置包括中心喷嘴102和边缘进气机构，其中，中心喷嘴102设置在反应腔室100的顶部的中心位置处；边缘进气机构包括进气口106、匀流腔105和多个出气口107，其中，匀流腔105由两个环绕设置在反应腔室100的侧壁顶部的盖板(103，104)形成，每一个盖板(103，104)沿反应腔室100轴向方向上的截面形状呈“L”形，两个盖板(103，104)彼此扣合形成匀流腔105；进气口106用于将工艺气体输送至匀流腔105；多个出气口107沿匀流腔105的周向均匀分布，用以将匀流腔105内的工艺气体输送至反应腔室100内。
上述等离子体加工设备可以应用在需要将两种不同的工艺气体交替通入反应腔室的工艺，例如BOSCH工艺，需要交替地向反应腔室内通入沉积气体和刻蚀气体。具体地，交替地，将第一种工艺气体通过中心喷嘴102输送至反应腔室100内，将第二种工艺气体依次通过进气口 106、匀流腔105和各个出气口107输送至反应腔室100内。
但是，对于边缘进气机构，在其完成对第二种工艺气体的输送之后，会有一部分工艺气体留存在匀流腔105的内部，而且在不使用边缘进气机构时，由于匀流腔105通过各个出气口107始终与反应腔室100保持连通，这使得留存在匀流腔105内部的第二种工艺气体会进入到反应腔室100内，与第一种工艺气体混合，导致反应腔室100内的气体成分发生改变，从而对工艺均匀性造成影响。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体加工设备，其在将两种不同的工艺气体交替通入反应腔室时，可以避免留存在匀流腔内部的工艺气体进入到反应腔室内，从而可以保证工艺均匀性。
为实现本发明的目的而提供一种半导体加工设备，包括反应腔室、中央进气机构和边缘进气机构，其中，所述中央进气机构设置在所述反应腔室的顶部的中心位置处；所述边缘进气机构包括进气口、匀流腔和至少一个出气口，其中，所述匀流腔沿所述反应腔室的周向环绕设置在所述反应腔室的顶部的边缘位置处；所述进气口与所述匀流腔连通，用以将工艺气体输送至所述匀流腔；所述至少一个出气口设置在所述反应腔室和所述匀流腔之间，其中，在每一个所述出气口内均设置有通断装置，用以在通过所述进气口向所述匀流腔输送工艺气体时，使所述匀流腔与所述反应腔室相连通；或者，在不向所述匀流腔输送工艺气体时，使所述匀流腔与所述反应腔室相隔离。
其中，所述通断装置包括固定部件、活动部件和弹性部件。所述固定部件和活动部件封堵所述出气口，二者沿所述出气口的轴向相对设置，所述活动部件靠近所述出气口的进气端，所述固定部件靠近所述出 气口的出气端；并且，所述固定部件具有第一通道；所述第一通道的出气端始终与所述反应腔室相连通；所述弹性部件设置在所述活动部件和所述固定部件之间，使二者弹性连接，且所述活动部件的一端暴露在所述匀流腔的内部环境中，以便在通过所述进气口向所述匀流腔输送工艺气体时，所述活动部件能够在所述匀流腔的内部环境的压力作用下通过挤压所述弹性部件变形而使自身位置发生变化，以使所述第一通道的进气端与所述匀流腔相连通；在不向所述匀流腔输送工艺气体时，在所述匀流腔的内部环境的压力作用下，所述活动部件处于原始位置，以使所述第一通道的进气端与所述匀流腔相隔离。
其中，所述固定部件包括端部和轴部。所述端部封堵在所述出气口的出气端处；所述轴部呈柱状，所述轴部的一端与所述端部连接，且位于所述端部的中心位置处，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的外周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；所述活动部件呈环状，且套设在所述轴部上，并且所述活动部件的内周壁与所述轴部的外周壁滑动配合；所述弹性部件套设在所述轴部上，且位于所述端部和所述活动部件的端面之间。
其中，所述第一通道的进气端为多个，且沿所述轴部的周向对称分布。
其中，所述固定部件包括端部和轴部。所述端部封堵在所述出气口的出气端处；所述轴部呈环状，且所述轴部的外周壁与所述出气口的内壁相配合；所述轴部的一端与所述端部连接，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的内周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；所述活动部件呈柱状，且嵌套在所述轴部内，并且所述活动部件的外周壁与所述轴部的内周壁滑动配合；所述弹性部件位于所述轴部 的内侧，且位于所述端部与所述活动部件的端面之间。
其中，所述第一通道为多条，且沿所述轴部的周向对称分布。
其中，所述通断装置包括固定部件、活动部件和弹性部件。所述固定部件和活动部件封堵所述出气口，二者沿所述出气口的轴向相对设置，所述活动部件靠近所述出气口的进气端，所述固定部件靠近所述出气口的出气端；并且，所述固定部件具有第一通道，所述活动部件具有第二通道；所述第一通道的出气端始终与所述反应腔室相连通，所述第一通道的进气端始终与所述第二通道的出气端相连通；所述弹性部件设置在所述活动部件和所述固定部件之间，使二者弹性连接，且所述活动部件的一端暴露在所述匀流腔的内部环境中，以便在通过所述进气口向所述匀流腔输送工艺气体时，所述活动部件能够在所述匀流腔的内部环境的压力作用下通过挤压所述弹性部件变形而使自身位置发生变化，以使所述第二通道的进气端与所述匀流腔相连通；在不向所述匀流腔输送工艺气体时，在所述匀流腔的内部环境的压力作用下，所述活动部件处于原始位置，以使所述第二通道的进气端与所述匀流腔相隔离。
其中，所述固定部件包括端部和轴部。所述端部封堵在所述出气口的出气端处；所述轴部呈柱状，且水平设置，并且所述轴部的一端与所述端部连接，且位于所述端部的中心位置处，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的外周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；在所述活动部件与所述轴部相对的表面上设置有配合孔，所述配合孔与所述轴部相配合；所述第二通道位于所述配合孔的外侧，且所述第二通道的出气端位于所述活动部件的与所述端部相对的表面上；所述活动部件的外周壁与所述出气口的内壁滑动配合，且分别在所述活动部件和所述出气口的内壁上对应地设置有凹部和凸部，所述凹部和凸部能够在所述活动部件处于原始位置时相互配合，在所述活动部件压缩所 述弹性部件时相互分离；所述第二通道的进气端位于所述凹部的与所述凸部相配合的表面上；所述弹性部件位于所述配合孔内，且位于所述轴部的端面与所述配合孔的底面之间。
其中，所述第二通道为多条，且围绕所述配合孔对称分布。
其中，所述第一通道的进气端为多个，且沿所述轴部的周向对称分布。
其中，所述出气口的数量为多个，且沿所述匀流腔的周向均匀分布。
所述弹性部件包括弹簧或波纹管。
本发明具有以下有益效果：
本发明提供的半导体加工设备，在反应腔室的顶部的中心位置和边缘位置分别设置有中央进气机构和边缘进气机构，中央进气机构和边缘进气机构连接不同的工艺气体源且彼此交替地向反应腔室输送其他，并且，在边缘进气机构的每一个出气口内均设置有通断装置，借助该通断装置，在向匀流腔输送工艺气体时，在边缘进气机构的匀流腔的内部环境的压力作用下，匀流腔与反应腔室相连通；或者，在不向匀流腔输送工艺气体时，在边缘进气机构的匀流腔的内部环境的压力作用下，匀流腔与反应腔室相隔离，这样，在中央进气机构向反应腔室输送气体时，避免匀流腔内存留的工艺气体进入到反应腔室内，从而可以保证工艺的均匀性及产品良率。
附图说明
图1为现有的等离子体加工设备的结构示意图；
图2A为本发明第一实施例提供的半导体加工设备的剖视图；
图2B为未通入气体时图2A中I区域的放大图；
图2C为通入气体时图2A中I区域的放大图；
图3A为本发明第二实施例中采用的通断装置在未通入气体时的放 大图；
图3B为本发明第二实施例采用的通断装置在通入气体时的放大图；
图4A为本发明第三实施例采用的通断装置在未通入气体时的放大图；以及
图4B为本发明第三实施例采用的通断装置在通入气体时的放大图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的半导体加工设备进行详细描述。
图2A为本发明第一实施例提供的半导体加工设备的剖视图。请参阅图2A，半导体加工设备包括反应腔室200、中央进气机构202和边缘进气机构，其中，在反应腔室200内设置有用于承载被加工工件的卡盘201。中央进气机构202设置在反应腔室200的顶部的中心位置处。边缘进气机构设置在反应腔室200的顶部的边缘位置处。
本发明实施例提供的半导体加工设备可以应用在需要将两种不同的工艺气体交替通入反应腔室的工艺，例如，交替地，将第一种工艺气体通过中央进气机构202输送至反应腔室200内，将第二种工艺气体通过边缘进气机构输送至反应腔室200内。
下面对本实施例中的边缘进气机构进行详细描述。
边缘进气机构包括进气口206、匀流腔203和多个出气口207。其中，匀流腔203由两个环绕设置在反应腔室200的侧壁顶部的盖板(204，205)扣合形成，具体地，在每一个盖板(204，205)沿反应腔室200轴向方向的半剖视图中的剖面形状呈“L”形，两个盖板(204，205)彼此搭接扣合形成匀流腔203。
进气口206与匀流腔203连通，并贯穿盖板204，用于将工艺气体自反应腔室外部输送至匀流腔203内。
多个出气口207沿匀流腔203的周向均匀分布，且每一个出气口207沿匀流腔203的径向贯穿盖板204，用以将匀流腔203内的工艺气体输送至反应腔室200内。而且，在每个出气口207内设置有通断装置208，用以在通过进气口206向匀流腔203内输送工艺气体时，在匀流腔203内的气压的作用下，使匀流腔203与反应腔室200相连通；或者，在不向匀流腔203内输送工艺气体时，在匀流腔203内的气压的作用下，使匀流腔203与反应腔室200相隔离，这样，在中央进气机构202向反应腔室200输送工艺气体时，能够避免匀流腔203内存留的第二种工艺气体进入到反应腔室200内，并与第一种工艺气体混合，从而可以保证工艺的均匀性及产品良率。
下面对上述通断装置208的具体实施方式进行详细描述。请一并参阅图2B和图2C，其中，图2B为未通入气体时图2A中I区域的放大图；图2C为通入气体时图2A中I区域的放大图。如图2B和图2C所示，通断装置208包括固定部件、活动部件304和压缩弹簧305，其中，固定部件和活动部件304封堵出气口207，二者沿出气口207的轴向相对设置，且活动部件304靠近出气口207的进气端，固定部件靠近出气口207的出气端。进一步地，固定部件包括端部301和轴部302，该端部301封堵在出气口207的出气端(图2B中的出气口207的左端)处；轴部302呈柱状，该轴部302的一端(图2B中的轴部302的左端)与端部301连接，且位于该端部301的中心位置处，轴部302的另一端朝出气口207的进气端(图2B中的出气口207的右端)水平延伸。
而且，固定部件具有第一通道303，该第一通道303的出气端(图2B中的第一通道303的左端)位于端部301的朝向反应腔室200的内侧壁上，该内侧壁暴露在反应腔室200的内部环境中，从而始终与反应 腔室200相连通；第一通道303的进气端(图2B中的第一通道303的右端)位于轴部302的外周壁上，该进气端的数量为多个，且沿轴部302的周向对称分布，从而可以提高进气效率。
活动部件304呈环状，且套设在轴部302上，并且该活动部件304的内周壁与轴部302的外周壁滑动配合。压缩弹簧305套设在轴部302上，且位于端部301和活动部件304的端面(图2B中的活动部件304的左端面)之间，从而活动部件304通过压缩弹簧305实现与固定部件的弹性连接，并且借助压缩弹簧305的弹性形变而使活动部件304相对于固定部件产生位置变化。如图2B所示，当不向匀流腔203内输送工艺气体时，匀流腔203内的气压较低，该气压朝向活动部件304施加的压力较小，不足以使压缩弹簧305产生明显形变，因此压缩弹簧305基本处于原始状态(即，压缩弹簧305基本保持自由状态下的长度)，此时，活动部件304所处位置足以使其封闭第一通道303的各个进气端，这样，在中央进气机构202向反应腔室200输送工艺气体时，能够避免匀流腔203内存留的工艺气体进入到反应腔室200内，从而可以保证工艺的均匀性及产品良率。
当通过进气口206向匀流腔203内输送工艺气体时，如图2C所示，匀流腔203内的气压逐渐上升，当该气压上升至其朝向活动部件304施加的压力大于压缩弹簧305的弹力的时候，活动部件304开始压缩压缩弹簧305使其产生弹性形变，即，活动部件304随着压缩弹簧305的形变而向左滑动，直至使第一通道303的各个进气端与匀流腔203相连通。在这种情况下，匀流腔203内的工艺气体通过第一通道303的各个进气端进入第一通道303，然后通过第一通道303的出气端进入反应腔室200内，工艺气体的气流方向如图2C中的箭头所示。当停止向匀流腔203内输送工艺气体时，匀流腔203内的气压下降，从而使得活动部件304在压缩弹簧305的弹力作用下复位，即返回至图2B中的位置处， 以重新使第一通道303的各个进气端与匀流腔203相隔离。
需要说明的是，在本实施例中，第一通道303的进气端为多个，且沿轴部302的周向均匀分布，但是本发明并不局限于此，在实际应用中，多个进气端不必沿轴部302的周向均匀分布；或者第一通道的进气端可以为一个。
请一并参阅图3A和图3B，其中，图3A为本发明第二实施例中采用的通断装置在未通入气体时的放大图；图3B为本发明第二实施例采用的通断装置在通入气体时的放大图。如图3A和图3B所示，本实施例提供的半导体加工设备与上述第一实施例相比，同样包括反应腔室、中央进气机构和边缘进气机构，且在每个出气口内设置有通断装置。由于上述机构或装置的结构和功能在第一实施例中已有了详细描述，在此不再赘述。下面仅对本实施例与上述第一实施例之间的区别进行详细描述。
具体地，本实施例采用的通断装置包括固定部件、活动部件404和压缩弹簧405，其中，固定部件和活动部件404封堵出气口207，二者沿出气口207的轴向相对设置，且活动部件404位于固定部件的外侧。进一步地，固定部件包括端部401和轴部402，其中，端部401封堵在出气口207的出气端处；轴部402呈环状，且该轴部402的外周壁与出气口207的内壁相配合；轴部402的一端与端部401连接，轴部402的另一端朝向出气口207的进气端水平延伸。
而且，固定部件具有一条或多条第一通道403，当第一通道403为多条时，多条第一通道403沿轴部402的周向对称分布，从而可以提高进气效率以及进气的均匀性。每条第一通道403的出气端位于端部401朝向反应腔室200的内侧壁上，该内侧壁暴露在反应腔室200的内部环境中，从而使每条第一通道403的出气端始终与反应腔室200相连通；第一通道403的进气端位于轴部402的内周壁上。
活动部件404呈柱状，且嵌套在轴部402内，并且活动部件404的外周壁与轴部402的内周壁滑动配合。压缩弹簧405位于轴部402内侧，且位于端部401与活动部件404的端面之间，从而活动部件404通过压缩弹簧405实现与固定部件的弹性连接，并且借助压缩弹簧405的弹性形变而使活动部件404相对于固定部件产生位置变化。如图3A所示，当不向匀流腔203内输送工艺气体时，此时匀流腔203内的气压较低，该气压朝向活动部件404施加的压力小于压缩弹簧405的弹力，压缩弹簧405基本处于原始状态(即，压缩弹簧405基本保持自由状态下的长度)，同时活动部件404处于可将第一通道403的各个进气端完全封闭住的位置处，这样，在中央进气机构202向反应腔室200输送工艺气体时，能够避免匀流腔203内存留的工艺气体进入到反应腔室200内，从而可以保证工艺的均匀性及产品良率。
当通过进气口206向匀流腔203内输送工艺气体时，如图3B所示，匀流腔203内的气压逐渐上升，当该气压上升至其朝向活动部件404施加的压力大于压缩弹簧405的弹力的时候，活动部件404开始压缩压缩弹簧405使其产生弹性形变，即，活动部件404随着压缩弹簧405的形变而向左滑动，直至使第一通道403的各个进气端与匀流腔203相连通。在这种情况下，匀流腔203内的工艺气体通过第一通道403的各个进气端进入第一通道403，然后通过第一通道403的出气端进入反应腔室200内，工艺气体的气流方向如图3B中的箭头所示。当停止向匀流腔203内输送工艺气体时，匀流腔203内的气压下降，从而使得活动部件404在压缩弹簧405的弹力作用下复位，即返回至图3A中的位置处，以重新使第一通道403的各个进气端与匀流腔203相隔离。
需要说明的是，在本实施例中，第一通道403为多条，且沿轴部402的周向均匀分布，但是本发明并不局限于此，在实际应用中，多条第一通道403也可以不必沿轴部402的周向均匀分布；或者，第一通道 403可以为一条。
请一并参阅图4A和图4B，其中，图4A为本发明第三实施例采用的通断装置在未通入气体时的放大图；图4B为本发明第三实施例采用的通断装置在通入气体时的放大图。如图4A和图4B所示，本实施例提供的半导体加工设备与上述第一实施例相比，同样包括反应腔室、中央进气机构和边缘进气机构，且每个出气口内设置有通断装置。由于上述机构或装置的结构和功能在第一实施例中已有了详细描述，在此不再赘述。下面仅对本实施例与上述第一实施例之间的区别进行详细描述。
具体地，本实施例采用的通断装置208包括固定部件、活动部件504和压缩弹簧505，其中，固定部件和活动部件504封堵出气口207，二者沿出气口207的轴向相对设置，且活动部件504靠近出气口207的进气端，固定部件靠近出气口207的出气端。进一步地，固定部件包括端部501和轴部502，其中，端部501封堵在出气口207的出气端处；轴部502呈柱状，且水平设置，并且轴部502的一端与端部501连接，且位于该端部501的中心位置处；轴部502的另一端朝向出气口207的进气端水平延伸。
而且，固定部件具有第一通道503，该第一通道503的出气端位于端部501的朝向反应腔室200的内侧壁上，该内侧壁暴露在反应腔室200的内部环境中，从而使第一通道503始终与反应腔室200相连通；第一通道503的进气端位于轴部502的外周壁上，该进气端的数量为多个，且沿轴部502的周向对称分布，从而可以提高进气效率以及进气均匀性。
在活动部件504与轴部502相对的表面上设置有配合孔，该配合孔与轴部502相配合。并且，活动部件504具有一条或多条第二通道506，且位于配合孔的外侧，并且多条第二通道506围绕配合孔对称分布，从而可以提高进气效率和进气均匀性。每条第二通道506的出气端位于活 动部件504的与端部501相对的表面上，从而使得第一通道503的进气端始终与第二通道506的出气端相连通。而且，活动部件504的外周壁与出气口207的内壁滑动配合，在活动部件504的靠近匀流腔203的端部形成凹部508，在出气口207的内壁上对应于该凹部508设置凸部507，第二通道506的进气端位于凹部508的与凸部507相配合的表面上。压缩弹簧505位于配合孔内，且在轴部502的端面(右端)与配合孔的底面之间延伸，即，压缩弹簧505沿轴部502的轴向延伸，通过压缩弹簧505可以实现活动部件504与固定部件的弹性连接。如图4A所示，当不向匀流腔203内输送工艺气体时，匀流腔203内的气压较低，该气压朝向活动部件304施加的压力小于压缩弹簧505的弹力，压缩弹簧505基本处于原始状态(即，压缩弹簧505基本保持自由状态下的长度)，同时凸部507嵌入凹部508内，且二者相互配合以将第二通道506的进气端封闭，从而使第二通道506的进气端与匀流腔203相隔离，这样，在中央进气机构202向反应腔室200输送工艺气体时，能够避免匀流腔203内存留的工艺气体进入到反应腔室200内，从而可以保证工艺的均匀性及产品良率。
当通过进气口206向匀流腔203内输送工艺气体时，如图4B所示，匀流腔203内的气压逐渐上升，当该气压上升至其朝向活动部件504施加的压力大于压缩弹簧505的弹力的时候，活动部件504开始压缩压缩弹簧505使其产生弹性形变，即，活动部件504随着压缩弹簧505的形变而向左滑动，直至凹部508和凸部507相互分离，即，活动部件504的最右端相比于凸部507最左端更靠近端部501的内侧壁，从而在活动部件504的最右端和凸部507最左端之间形成间隙，使得第二通道506的进气端与匀流腔203相连通。在这种情况下，匀流腔203内的工艺气体通过第二通道506的进气端进入第二通道506，并通过第二通道506的出气端进入出气口207的位于活动部件504与所述端部501之间 的空间内，然后通过第一通道503的各个进气端进入第一通道503，并通过第一通道503的出气端进入反应腔室200内。工艺气体的气流方向如图4B中的箭头所示。当停止向匀流腔203内输送工艺气体时，匀流腔203内的气压下降，从而使得活动部件504在压缩弹簧505的弹力作用下复位，即返回至图4A中的位置处，以重新使第二通道506的进气端与匀流腔203相隔离。
需要说明的是，尽管上述各实施例均是以压缩弹簧为例进行的说明，但是本发明并不局限于此，而是也可以采用诸如波纹管等的其他形式的弹性部件，只要该弹性部件能够满足下述的条件即可：即，该弹性部件在匀流腔进气时能够产生足以使匀流腔和反应腔室连通的弹性形变，且在匀流腔未进气时不产生形变或者产生的形变不足以使匀流腔和反应腔室连通。
综上所述，本发明上述各个实施例提供的半导体加工设备，在反应腔室的顶部的中心位置和边缘位置分别设置有中央进气机构和边缘进气机构，中央进气机构和边缘进气机构连接不同的工艺气体源且彼此交替地向反应腔室输送其他，并且，在边缘进气机构的每一个出气口内均设置有通断装置，借助该通断装置，在向匀流腔输送工艺气体时，在边缘进气机构的匀流腔的内部环境的压力作用下，匀流腔与反应腔室相连通；或者，在不向匀流腔输送工艺气体时，在边缘进气机构的匀流腔的内部环境的压力作用下，匀流腔与反应腔室相隔离，这样，在中央进气机构向反应腔室输送气体时，避免匀流腔内存留的工艺气体进入到反应腔室内，从而可以保证工艺的均匀性及产品良率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种半导体加工设备，包括反应腔室、中央进气机构和边缘进气机构，其中，所述中央进气机构设置在所述反应腔室的顶部的中心位置处；所述边缘进气机构包括进气口、匀流腔和至少一个出气口，其中，所述匀流腔沿所述反应腔室的周向环绕设置在所述反应腔室的顶部的边缘位置处；所述进气口与所述匀流腔连通，用以将工艺气体输送至所述匀流腔；所述至少一个出气口设置在所述反应腔室和所述匀流腔之间，其特征在于，
    在每一个所述出气口内均设置有通断装置，用以在通过所述进气口向所述匀流腔输送工艺气体时，使所述匀流腔与所述反应腔室相连通；或者，在不向所述匀流腔输送工艺气体时，使所述匀流腔与所述反应腔室相隔离。
  2. 根据权利要求1所述的半导体加工设备，其特征在于，所述通断装置包括固定部件、活动部件和弹性部件，其中，
    所述固定部件和活动部件封堵所述出气口，二者沿所述出气口的轴向相对设置，所述活动部件靠近所述出气口的进气端，所述固定部件靠近所述出气口的出气端；并且，所述固定部件具有第一通道；所述第一通道的出气端始终与所述反应腔室相连通；
    所述弹性部件设置在所述活动部件和所述固定部件之间，使二者弹性连接，且所述活动部件的一端暴露在所述匀流腔的内部环境中，以便在通过所述进气口向所述匀流腔输送工艺气体时，所述活动部件能够在所述匀流腔的内部环境的压力作用下通过挤压所述弹性部件变形而使自身位置发生变化，以使所述第一通道的进气端与所述匀流腔相连通；在不向所述匀流腔输送工艺气体时，在所述匀流腔的内部环境的压力作用下，所述活动部件处于原始位置，以使所述第一通道的进气端与所述匀流腔相隔离。
  3. 根据权利要求2所述的半导体加工设备，其特征在于，所述固定部 件包括端部和轴部，其中，
    所述端部封堵在所述出气口的出气端处；
    所述轴部呈柱状，所述轴部的一端与所述端部连接，且位于所述端部的中心位置处，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的外周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；
    所述活动部件呈环状，且套设在所述轴部上，并且所述活动部件的内周壁与所述轴部的外周壁滑动配合；
    所述弹性部件套设在所述轴部上，且位于所述端部和所述活动部件的端面之间。
  4. 根据权利要求3所述的半导体加工设备，其特征在于，所述第一通道的进气端为多个，且沿所述轴部的周向对称分布。
  5. 根据权利要求2所述的半导体加工设备，其特征在于，所述固定部件包括端部和轴部，其中，
    所述端部封堵在所述出气口的出气端处；
    所述轴部呈环状，且所述轴部的外周壁与所述出气口的内壁相配合；所述轴部的一端与所述端部连接，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的内周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；
    所述活动部件呈柱状，且嵌套在所述轴部内，并且所述活动部件的外周壁与所述轴部的内周壁滑动配合；
    所述弹性部件位于所述轴部的内侧，且位于所述端部与所述活动部件的端面之间。
  6. 根据权利要求5所述的半导体加工设备，其特征在于，所述第一通 道为多条，且沿所述轴部的周向对称分布。
  7. 根据权利要求1所述的半导体加工设备，其特征在于，所述通断装置包括固定部件、活动部件和弹性部件，其中，
    所述固定部件和活动部件封堵所述出气口，二者沿所述出气口的轴向相对设置，所述活动部件靠近所述出气口的进气端，所述固定部件靠近所述出气口的出气端；并且，所述固定部件具有第一通道，所述活动部件具有第二通道；所述第一通道的出气端始终与所述反应腔室相连通，所述第一通道的进气端始终与所述第二通道的出气端相连通；
    所述弹性部件设置在所述活动部件和所述固定部件之间，使二者弹性连接，且所述活动部件的一端暴露在所述匀流腔的内部环境中，以便在通过所述进气口向所述匀流腔输送工艺气体时，所述活动部件能够在所述匀流腔的内部环境的压力作用下通过挤压所述弹性部件变形而使自身位置发生变化，以使所述第二通道的进气端与所述匀流腔相连通；在不向所述匀流腔输送工艺气体时，在所述匀流腔的内部环境的压力作用下，所述活动部件处于原始位置，以使所述第二通道的进气端与所述匀流腔相隔离。
  8. 根据权利要求7所述的半导体加工设备，其特征在于，所述固定部件包括端部和轴部，其中，
    所述端部封堵在所述出气口的出气端处；
    所述轴部呈柱状，且水平设置，并且所述轴部的一端与所述端部连接，且位于所述端部的中心位置处，所述轴部的另一端朝向所述出气口的进气端水平延伸；所述第一通道的进气端位于所述轴部的外周壁上，所述第一通道的出气端位于所述端部的朝向所述反应腔室的内侧壁上；
    在所述活动部件与所述轴部相对的表面上设置有配合孔，所述配合孔与所述轴部相配合；所述第二通道位于所述配合孔的外侧，且所述第二通道的 出气端位于所述活动部件的与所述端部相对的表面上；
    所述活动部件的外周壁与所述出气口的内壁滑动配合，且分别在所述活动部件和所述出气口的内壁上对应地设置有凹部和凸部，所述凹部和凸部能够在所述活动部件处于原始位置时相互配合，在所述活动部件压缩所述弹性部件时相互分离；所述第二通道的进气端位于所述凹部的与所述凸部相配合的表面上；
    所述弹性部件位于所述配合孔内，且位于所述轴部的端面与所述配合孔的底面之间。
  9. 根据权利要求8所述的半导体加工设备，其特征在于，所述第二通道为多条，且围绕所述配合孔对称分布。
  10. 根据权利要求8所述的半导体加工设备，其特征在于，所述第一通道的进气端为多个，且沿所述轴部的周向对称分布。
  11. 根据权利要求1-10中任一项所述的半导体加工设备，其特征在于，所述出气口的数量为多个，且沿所述匀流腔的周向均匀分布。
  12. 根据权利要求11所述的半导体加工设备，其特征在于，所述弹性部件包括弹簧或波纹管。
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