WO2017094176A1 - Dispositif de préparation d'échantillon pour observation en coupe, et procédé de préparation d'échantillon pour observation en coupe - Google Patents

Dispositif de préparation d'échantillon pour observation en coupe, et procédé de préparation d'échantillon pour observation en coupe Download PDF

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Publication number
WO2017094176A1
WO2017094176A1 PCT/JP2015/084093 JP2015084093W WO2017094176A1 WO 2017094176 A1 WO2017094176 A1 WO 2017094176A1 JP 2015084093 W JP2015084093 W JP 2015084093W WO 2017094176 A1 WO2017094176 A1 WO 2017094176A1
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WIPO (PCT)
Prior art keywords
semiconductor substrate
cross
filler
observation sample
opening
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PCT/JP2015/084093
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English (en)
Japanese (ja)
Inventor
敬司 渡邉
哲史 河村
峰　利之
杉井　信之
龍崎　大介
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株式会社日立製作所
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Priority to PCT/JP2015/084093 priority Critical patent/WO2017094176A1/fr
Publication of WO2017094176A1 publication Critical patent/WO2017094176A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support

Definitions

  • the present invention relates to a cross-section observation sample preparation apparatus and a cross-section observation sample preparation method for a semiconductor substrate, and more particularly to preparation of a cross-section observation sample for a semiconductor substrate having a hollow region.
  • MEMS Micro Electro Mechanical Systems
  • the MEMS device is used as, for example, a pressure sensor that utilizes vibration of a membrane, and often has a hollow region inside a semiconductor substrate.
  • the cross-sectional shape of the hollow region greatly affects its operating characteristics. For this reason, observing the cross-sectional shape of the hollow region in the middle stage of the manufacturing process of the MEMS device is one of effective inspection methods for maintaining the operation characteristics of the MEMS device.
  • Non-Patent Document 1 describes that in a MEMS device manufacturing process, a membrane is deformed and a stiction phenomenon occurs.
  • the stiction phenomenon is a phenomenon that occurs when, for example, a membrane deformed by the action of a capillary force or an electrostatic force comes into contact with an opposing film or substrate via a cavity and is fixed.
  • a technique using a focused ion beam is often employed for cross-section processing and shape observation.
  • sample observation can be performed with high magnification using an ion beam or an electron beam, and a desired position of a semiconductor device can be processed.
  • the cross-section processing is performed by irradiating a semiconductor substrate having a hollow region with a focused ion beam
  • a part of the substance removed from the semiconductor substrate adheres to the inner wall of the hollow region as a reattachment.
  • the membrane and the semiconductor substrate come into contact with each other through the reattachment in a part of the hollow region, and the stiction The phenomenon occurs.
  • the cross-sectional shape of the hollow region becomes different from the shape before the cross-section processing. Therefore, it is currently difficult to inspect the semiconductor device (MEMS device) during the manufacturing process by processing the cross section using a focused ion beam and observing the cross-sectional shape of the obtained hollow region. there were.
  • MEMS device semiconductor device
  • An object of the present invention is to provide a cross-section observation sample preparation apparatus and a cross-section observation sample preparation method capable of suppressing the occurrence of a stiction phenomenon when a cross section of a semiconductor substrate having a hollow region is processed.
  • a support base for supporting a semiconductor substrate, a beam irradiation gun for irradiating the semiconductor substrate with a beam, and a probe for extracting the cross-sectional observation sample from the semiconductor substrate
  • a filler supply line that supplies a filler toward the surface of the semiconductor substrate supported by the support
  • a discharge nozzle that is connected to the filler supply line and that discharges the filler onto the surface of the semiconductor substrate.
  • a suction nozzle for sucking a filler from the surface of the semiconductor substrate, a vacuum line for collecting the filler sucked from the suction nozzle, a temperature control mechanism for controlling the temperature of the support base, and the discharge nozzle. It has a discharge nozzle moving mechanism for moving, and a suction nozzle moving mechanism for moving the suction nozzle.
  • a first opening that exposes the hollow region is formed by irradiating a beam toward the surface of the semiconductor substrate having the hollow region,
  • the filler is discharged toward the first opening, the filler is filled into the hollow region, the temperature of the semiconductor substrate is controlled, the beam is irradiated to the semiconductor substrate, and the first Forming a second opening that exposes the hollow region by a processing cross-section including a surface formed by the filler at a position different from the opening of the semiconductor substrate, and from the semiconductor substrate having the second opening
  • the filler is removed, and a cross-section observation sample having the processed cross section is extracted from the semiconductor substrate.
  • FIG. 2 is a view showing a state where a semiconductor substrate 41 in an initial state before beam irradiation from a beam irradiation gun 12 is installed on a support base 11. It is a figure which shows the state which is performing the 1st beam irradiation toward the semiconductor substrate 41 from the beam irradiation gun 12.
  • FIG. It is a figure which shows the state which is discharging the filler 51 toward the 1st opening part 44 from the discharge nozzle 23.
  • FIG. It is a figure which shows the state which is heating with the heater 16 the semiconductor substrate 41 with which the hollow area
  • FIG. It is a figure which shows the state which is performing the 2nd beam irradiation toward the semiconductor substrate 41 from the beam irradiation gun 12.
  • FIG. It is a figure which shows typically the flow direction of the washing
  • FIG. It is a figure which shows the state at the time of extracting the observation sample 47 from the semiconductor substrate 41.
  • FIG. 4B shows a perspective view of the appearance of the semiconductor substrate 41 in the vicinity of the first opening 44 after the first cross-section processing.
  • FIG. 3 is a perspective view showing an appearance of a semiconductor substrate 41 in the vicinity of a first opening 44 after a hollow region 42 is filled with a liquid filler 51.
  • FIG. 3 is a perspective view showing an appearance of a semiconductor substrate 41 in the vicinity of a first opening 44 after a solid filler 53 is formed in a hollow region 42.
  • 4D is a diagram showing a position of a second cross-section processing surface 62 in the semiconductor substrate 41 shown in FIG. 4D. It is a perspective view which shows the external appearance of the semiconductor substrate 41 in the vicinity of the 2nd opening part 45 after performing the 2nd cross-section process. It is a perspective view which shows the external appearance of the semiconductor substrate 41 in the vicinity of the 2nd opening part 45 after the filler 53 was removed. 10 is a flowchart showing a cleaning process using the cross-section observation sample preparation device 200. It is a figure which shows the state by which the semiconductor substrate 41 of the initial state before performing the beam irradiation from the beam irradiation gun 12 was installed in the support stand.
  • FIG. 1 It is a figure which shows the state which is performing the 1st beam irradiation toward the semiconductor substrate 41 from the beam irradiation gun 12.
  • FIG. It is a figure which shows the state which is discharging the filler 51 toward the 1st opening part 44 from the discharge nozzle 23.
  • FIG. 1 is a perspective view showing a cross-sectional observation sample preparation apparatus 100 according to the first embodiment.
  • the cross-section observation sample preparation apparatus 100 includes a support base 11 that supports the semiconductor substrate 41.
  • a support base rotating mechanism 71 that rotates the support base 11 is connected to the support base 11. By connecting the support table rotating mechanism 71 to the support table 11, the semiconductor substrate 41 can be cleaned while being rotated.
  • a beam irradiation gun 12 that irradiates the semiconductor substrate 41 with a beam and a probe 13 that extracts a cross-sectional observation sample (hereinafter simply referred to as an observation sample) from the semiconductor substrate 41 are installed in the vicinity of the support base 11. Yes.
  • the beam irradiation gun 12 is connected to a beam irradiation gun drive mechanism 72 that drives the movement operation and beam irradiation operation of the beam irradiation gun 12, and the probe 13 drives the movement operation of the probe 13 and the sample extraction operation.
  • a probe driving mechanism 73 is connected.
  • a liquid supply line 21 is installed in the vicinity of the beam irradiation gun 12.
  • the liquid supply line 21 is configured by a hollow columnar body.
  • a filler supply line (not shown) for supplying a filler toward the surface of the semiconductor substrate 41
  • a cleaning liquid supply line (not shown) for supplying a cleaning liquid toward the surface of the semiconductor substrate 41. It is arranged.
  • the liquid supply line 21 has both the function of the filler supply line and the function of the cleaning liquid supply line.
  • a filling material storage tank and a cleaning liquid storage tank (not shown) are disposed at one end of the liquid supply line 21.
  • the filler storage tank is connected to the filler supply line, and the cleaning liquid storage tank is connected to the cleaning liquid supply line.
  • the other end of the liquid supply line 21 is connected with a discharge nozzle movable arm 22 and a discharge nozzle 23 in this order. That is, the discharge nozzle 23 is connected to the cleaning liquid supply line and the filler supply line via the discharge nozzle movable arm 22.
  • the filler supply line and the cleaning liquid supply line can be switched between a filler supply from the filler supply line to the discharge nozzle 23 and a cleaning liquid supply from the cleaning liquid supply line to the discharge nozzle 23 by a switching mechanism (not shown). It is configured.
  • a vacuum line 31 for collecting liquid from the surface of the semiconductor substrate 41 is installed.
  • the vacuum line 31 is constituted by a hollow columnar body, and a vacuum pump (not shown) is connected to one end of the vacuum line 31.
  • a suction nozzle movable arm 32 and a suction nozzle 33 are connected to the other end of the vacuum line 31 in this order.
  • the discharge nozzle movable arm 22 is connected to a discharge nozzle moving mechanism 74.
  • the discharge nozzle moving mechanism 74 moves the discharge nozzle 23 by driving the discharge nozzle movable arm 22.
  • the suction nozzle movable arm 32 is connected to the suction nozzle moving mechanism 75.
  • the suction nozzle moving mechanism 75 moves the suction nozzle 33 by driving the suction nozzle movable arm 32.
  • a pure water supply line for supplying pure water and a pure water discharge nozzle connected to the pure water supply line may be installed.
  • a gas spraying mechanism may be provided in which after the semiconductor substrate 41 is cleaned, a gas is sprayed onto the liquid remaining on the surface of the semiconductor substrate 41 to dry the surface of the semiconductor substrate 41.
  • the heater 11 is built in the support base 11.
  • a temperature control mechanism 76 is connected to the heater 16.
  • the temperature control mechanism 76 controls the temperature of the support 16 to a desired range by controlling the temperature of the heater 16.
  • the support 11, the beam irradiation gun 12, the probe 13, the liquid supply line 21, the vacuum line 31, the discharge nozzle movable arm 22, the suction nozzle movable arm 32, the discharge nozzle 23, and the suction nozzle 33 are accommodated in the chamber 90. .
  • a evacuation mechanism 77 that evacuates the chamber 90 is connected to the chamber 90.
  • the control unit 81 is connected to the support base rotating mechanism 71, the beam irradiation gun driving mechanism 72, the probe driving mechanism 73, the discharge nozzle moving mechanism 74, the suction nozzle moving mechanism 75, the temperature control mechanism 76, and the vacuuming mechanism 77. The operation of each of these units is controlled.
  • the portions that may come into contact with the cleaning liquid in the support base 11, the discharge nozzle 23, and the suction nozzle 33 are formed of a corrosion-resistant material.
  • each part of the cross-section observation sample preparation apparatus 100 is made of a low dust generation material as much as possible.
  • each of the discharge nozzle 23 and the suction nozzle 33 has a single-cylinder configuration.
  • the discharge nozzle 23 and the suction nozzle 33 may have other configurations.
  • the support base 11, the beam irradiation gun 12, the probe 13, the liquid supply line 21, the vacuum line 31, the discharge nozzle movable arm 22 and the suction nozzle movable arm 32 have shapes different from those shown in FIG. Also good.
  • FIG. 2 shows a cross-section observation sample preparation device 200 that is a modification of the cross-section observation sample preparation device 100 shown in FIG.
  • the cross-section observation sample preparation apparatus 200 is different from the suction nozzle 33 of the cross-section observation sample preparation apparatus 100 in the form of the suction nozzle 33.
  • the other configuration of the cross-section observation sample preparation device 200 is the same as that of the cross-section observation sample preparation device 100, and a description thereof will be omitted.
  • the suction nozzle 33 having an opening 332 inside an annular suction port 331 is used.
  • the suction nozzle 33 has a double cylindrical configuration in which the outer edge and the inner edge of the suction port 331 both have a circular upper surface shape.
  • the outer diameter of the discharge nozzle 23 is smaller than the inner diameter of the suction port 331 of the suction nozzle 33.
  • the discharge nozzle 231 of the discharge nozzle 23 is positioned inside the inner edge of the suction port 331 of the suction nozzle 33, that is, in the opening 332.
  • the liquid can be discharged from the nozzle 23 and the liquid can be sucked from the suction nozzle 33. Accordingly, when the liquid is discharged and sucked, the liquid existing range on the surface of the semiconductor substrate 41 can be defined within a range surrounded by the suction port 331 of the suction nozzle 33.
  • a suction nozzle 331 having an inner edge and an outer edge having another planar shape such as a square may be used as the suction nozzle 33 having the annular suction port 331.
  • the cross-sectional observation sample preparation apparatus 200 having the support base rotating mechanism 71 is used as the support base 11 has been described as an example.
  • the cross-sectional observation sample preparation apparatus does not necessarily have the support base rotation mechanism 71.
  • the configuration in which the heater 16 is built in the support base 11 has been described as an example.
  • the heater 16 may be installed separately from the support base 11.
  • ⁇ Cross-section observation sample preparation method> A method for preparing a cross-section observation sample using the cross-section observation sample preparation apparatus 200 will be described with reference to the flowchart shown in FIG. 5 and FIGS. 3A to 3H.
  • control unit 81 the support base rotating mechanism 71, the beam irradiation gun driving mechanism 72, the probe driving mechanism 73, the discharge nozzle moving mechanism 74, the suction nozzle moving mechanism 75, the temperature control mechanism 76, and the vacuum evacuation.
  • the description of the mechanism 77 is omitted.
  • Step S11 First, in step S11, the semiconductor substrate 41 having the hollow region 42 is installed on the support base 11 (see FIG. 3A).
  • FIG. 3A shows a cross section of the semiconductor substrate 41 in an initial state before the beam irradiation from the beam irradiation gun 12 is performed.
  • the semiconductor substrate 41 is held on the support base 11 by an electrostatic chuck.
  • the semiconductor substrate 41 has a hollow region 42 formed therein, and a membrane 43 is formed on the hollow region 42.
  • Step S12 Next, in step S ⁇ b> 12, the control unit 81 sets a region for extracting an observation sample in the semiconductor substrate 41 based on information input by an input unit (not shown).
  • Step S13 Next, in step S ⁇ b> 13, the first beam irradiation is performed toward the surface of the semiconductor substrate 41 to form the first opening 44.
  • the controller 81 drives the evacuation mechanism 77 to evacuate the chamber 90 using the evacuation mechanism 77.
  • the beam irradiation gun drive mechanism 72 drives the beam irradiation gun 12 based on a command from the control unit 81, and moves the beam irradiation gun 12 above the range set in step S12.
  • the beam irradiation gun 12 is driven by a beam irradiation gun drive mechanism 72 to irradiate the beam 14 toward the surface of the semiconductor substrate 41 (see FIG. 3B).
  • the first beam irradiation is performed toward an arbitrary position within a range corresponding to a position immediately above the hollow region 42 on the surface of the semiconductor substrate 41.
  • a hollow region 42 is exposed through the first opening 44 in the semiconductor substrate 41 after the first beam irradiation.
  • FIG. 3B shows a cross section of the semiconductor substrate 41 in which the first opening 44 is formed.
  • the beam irradiation gun 12 it is desirable to use an ion beam or an electron beam that is accelerated by an electric field to be an ion beam or an electron beam, and by focusing these beams on the surface of the sample, a part of the sample can be removed.
  • the beam irradiation gun 12 forms the first opening 44 from the surface of the semiconductor substrate 41 to a position deeper than the lower end surface of the hollow region 42.
  • the first opening 44 is preferably formed substantially perpendicular to the surface of the semiconductor substrate 41 as shown in FIG. 3B.
  • the first opening 44 desirably has an opening width that allows the liquid filler 51 to be smoothly filled into the hollow region 42 in step S ⁇ b> 17 described later.
  • step S14 Next, in step S ⁇ b> 14, the support base rotation mechanism 71 rotates the support base 11 based on a command from the control unit 81. Thereby, the semiconductor substrate 41 rotates by spin.
  • Step S15 Next, in step S ⁇ b> 15, the discharge nozzle moving mechanism 74 drives the discharge nozzle movable arm 22 based on a command from the control unit 81, and the discharge nozzle 231 is separated from the surface of the semiconductor substrate 41. 23 is moved horizontally. The discharge nozzle moving mechanism 74 drives the discharge nozzle movable arm 22 so that the tip of the discharge nozzle 23 is positioned above the first opening 44 formed in step S13.
  • Step S16 Next, in step S ⁇ b> 16, the discharge nozzle moving mechanism 74 drives the discharge nozzle movable arm 22 and moves the discharge nozzle 23 vertically to the semiconductor substrate 41 side based on a command from the control unit 81 as necessary.
  • the discharge nozzle moving mechanism 74 vertically moves the discharge nozzle movable arm 22 toward the semiconductor substrate 41 to a position where the distance between the discharge port 231 of the discharge nozzle 23 and the semiconductor substrate 41 becomes a desired value.
  • step S17 the hollow region 42 is filled with a liquid filler 51 (hereinafter simply referred to as filler 51) (see FIG. 3C).
  • FIG. 3C shows a cross section of the semiconductor substrate 41 after the hollow region 42 is filled with the filler 51.
  • FIG. 3C schematically shows the flow direction of the filler 51 in the discharge nozzle movable arm 22 and the discharge nozzle 23 in step S ⁇ b> 17 together with the semiconductor substrate 41.
  • the flow direction 52 of the filler 51 is indicated by an arrow.
  • the filler 51 stored in a filler storage tank (not shown) is supplied to the filler supply line of the liquid supply line 21, and the inside of the discharge nozzle movable arm 22 is shown in FIG. 3C. It flows in the direction of the arrow 52 and is supplied to the discharge nozzle 23. Then, the discharge nozzle 23 discharges the filler 51 toward the first opening 44 of the semiconductor substrate 41, and the filler 51 is filled into the hollow region 42 from the first opening 44.
  • the filler 51 is preferably made of a resin material such as a photoresist in consideration of solidification by heating performed in step S18 described later and workability of removal performed by cleaning performed in steps S24 to S25.
  • the discharge amount of the filler 51 discharged toward the semiconductor substrate 41 is larger than the volume required for filling the hollow region 42.
  • the entire hollow region 42 is filled with the filler 51, and the filler 51 is also deposited on the surface of the semiconductor substrate 41 with the first opening 44 as the center.
  • the discharge amount of the filler 51 is too large compared to the volume of the hollow region 42, the filler 51 diffuses over a wide range on the surface of the semiconductor substrate 41, and the amount of cleaning liquid required for removing the filler 51 is large. It becomes excessive. For this reason, it is desirable that the discharge amount of the filler 51 onto the semiconductor substrate 41 is as small as possible within a range larger than the volume required to fill the hollow region 42.
  • step S18 the temperature control mechanism 76 raises the temperature of the heater 16 and heats the support base 11 based on a command from the control unit 81 (see FIG. 3D).
  • the semiconductor substrate 41 is heated by the heat flow 15 applied to the semiconductor substrate 41 from the support 11 heated by the heater 16.
  • the liquid filler 51 is solidified, and a solid filler 53 is formed in the hollow region 42.
  • FIG. 3D shows a cross section of the semiconductor substrate 41 after the liquid filler 51 is solidified and the solid filler 53 is formed.
  • the semiconductor substrate 41 can be solidified by heating to about 110 to 120 ° C.
  • Step S19 Next, in step S19, a second beam irradiation is performed toward the semiconductor substrate 41 to form a second opening.
  • the beam irradiation gun drive mechanism 72 drives the beam irradiation gun 12 based on a command from the control unit 81, and step S12.
  • the beam irradiation gun 12 is moved above the range set in.
  • the beam irradiation gun 12 is driven by a beam irradiation gun drive mechanism 72 to irradiate the beam 14 toward the surface of the semiconductor substrate 41 (see FIG. 3E).
  • the second beam irradiation is performed in a range corresponding to a position immediately above the hollow region 42 on the surface of the semiconductor substrate 41 and toward a position different from the first opening 44.
  • the solid filler 53 hereinafter simply referred to as the filler 53
  • the membrane 43 the membrane 43
  • the semiconductor substrate 41 are removed in a part of the region, and the first opening 44 is A second opening 45 is formed at a different position.
  • FIG. 3E shows a cross section of the semiconductor substrate 41 in which the second opening 45 is formed.
  • the second opening 45 formed by the second beam irradiation has a processed cross section 451 including a surface formed by the solid filler 53 (see FIG. 4F). Through this processed cross section 451, the hollow region 42 filled with the solid filler 53 is exposed in the second opening 45.
  • the processed cross section 451 of the second opening 45 is an observation surface of the observation sample 47 (see FIG. 3H) extracted in step S27 described later. For this reason, the formation region and depth of the second opening 45 are appropriately adjusted so that a desired observation visual field can be obtained in the observation sample 47.
  • the second opening 45 is formed from the surface of the solid filler 53 to a position deeper than the lower end surface of the hollow region 42.
  • the second opening 45 is preferably formed substantially perpendicular to the surface of the semiconductor substrate 41.
  • Step S20 Next, in step S ⁇ b> 20, the suction nozzle moving mechanism 75 drives the suction nozzle movable arm 32 based on a command from the control unit 81, and the suction port 331 of the suction nozzle 33 is separated from the surface of the semiconductor substrate 41. Then, the suction nozzle 33 is moved horizontally. The suction nozzle moving mechanism 75 moves the suction nozzle movable arm 32 so that the center of the suction port 331 of the suction nozzle 33 is located above the first opening 44 when viewed from the axial direction of the suction nozzle 33. The suction nozzle 33 is moved by driving.
  • Step S21 Next, in step S ⁇ b> 21, the suction nozzle moving mechanism 75 drives the suction nozzle movable arm 32 based on a command from the control unit 81 and vertically moves the suction nozzle 33 to the semiconductor substrate 41 side.
  • the suction nozzle moving mechanism 75 moves the suction nozzle movable arm 32 to a position where the distance between the suction port 331 of the suction nozzle 33 and the semiconductor substrate 41 becomes a desired value.
  • Step S22 Next, in step S ⁇ b> 22, the discharge nozzle moving mechanism 74 drives the discharge nozzle movable arm 22 based on a command from the control unit 81, and the discharge nozzle 23 in a state where the discharge port 231 is separated from the surface of the semiconductor substrate 41. Move horizontally.
  • the discharge nozzle moving mechanism 74 discharges so that the discharge port 231 enters a region inside the suction port 331, that is, a region in the opening 332 (see FIG. 2).
  • the nozzle movable arm 22 is moved horizontally (see FIG. 3F).
  • Step S23 the discharge nozzle moving mechanism 74 drives the discharge nozzle movable arm 22 based on a command from the control unit 81 and vertically moves the discharge nozzle 23 toward the semiconductor substrate 41.
  • the discharge nozzle moving mechanism 74 vertically moves the discharge nozzle movable arm 22 toward the semiconductor substrate 41 to a position where the distance between the discharge port 231 of the discharge nozzle 23 and the semiconductor substrate 41 becomes a desired value.
  • Step S24 Next, in step S24 to step S25, the cleaning liquid is discharged and sucked, and the filler 53 is removed.
  • FIG. 3F schematically shows the flow direction of the cleaning liquid in the cross-section observation sample preparation apparatus 200 in the following steps S24 to S25.
  • the flow direction 52 of the cleaning liquid is indicated by an arrow.
  • step S24 the cleaning liquid stored in a cleaning liquid storage tank (not shown) is supplied to the cleaning liquid supply line of the liquid supply line 21. As shown in FIG. It is made to flow in the direction and supplied to the discharge nozzle 23. Then, the discharge nozzle 23 discharges the cleaning liquid toward the first opening 44 of the semiconductor substrate 41, and causes the cleaning liquid to flow into the hollow region 42.
  • a cleaning liquid storage tank not shown
  • the solid filler 53 is separated from the inside of the hollow region 42 and the surface of the semiconductor substrate 41 by the cleaning liquid.
  • the solid filler 53 separated from the hollow region 42 and the surface of the semiconductor substrate 41 flows out to the surface of the semiconductor substrate 41 from the first opening 44 and the second opening 45 together with the cleaning liquid.
  • an organic solvent such as acetone is preferably used as the cleaning liquid.
  • an organic solvent such as acetone is preferably used as the cleaning liquid.
  • Step S25 Next, in step S ⁇ b> 25, the suction nozzle 33 sucks the mixture of the cleaning liquid and the filler 53 that has flowed out to the surface of the semiconductor substrate 41. As shown in FIG. 3F, the suction nozzle 33 sucks the mixture of the cleaning liquid and the filler 53 while being separated from the surface of the semiconductor substrate 41. The mixture of the cleaning liquid and the filler 53 sucked by the suction nozzle 33 is collected by the vacuum line 31 via the suction nozzle movable arm 32 and removed from the semiconductor substrate 41. FIG. 3F shows a cross section of the semiconductor substrate 41 after the filler 53 has been removed by the cleaning liquid.
  • the suction nozzle 33 applies a suction force to the cleaning liquid by reducing the pressure inside the nozzle as described above. Accordingly, the cleaning liquid is sucked by the suction nozzle 33 while the suction nozzle 33 and the semiconductor substrate 41 are not in contact with each other.
  • the semiconductor substrate 41 is spin-rotated so that the cleaning liquid moves within a desired cleaning range on the surface of the semiconductor substrate 41.
  • a centrifugal force directed toward the outer periphery of the semiconductor substrate 41 acts on the cleaning liquid.
  • the suction force by the suction nozzle 33 is smaller than the centrifugal force acting on the cleaning liquid, the cleaning liquid is not sucked by the suction nozzle 33 and diffuses to the outer periphery of the semiconductor substrate 41. Accordingly, the positions of the suction nozzle 33 and the discharge nozzle 23 are set so that the suction force acting on the cleaning liquid from the suction nozzle 33 becomes larger than the centrifugal force acting on the cleaning liquid due to the spin rotation of the semiconductor substrate 41, and It is desirable to adjust conditions appropriately.
  • the suction nozzle 33 has a circular top surface shape and has rotational symmetry.
  • the cleaning liquid flows uniformly in all directions due to the rotation of the support table 11 when the cleaning liquid is sucked. For this reason, generation of a watermark on the surface of the semiconductor substrate 41 can be prevented.
  • Step S26 a third beam irradiation is performed toward the semiconductor substrate 41 to form a third opening.
  • the beam irradiation gun drive mechanism 72 drives the beam irradiation gun 12 on the basis of a command from the control unit 81, and the step The beam irradiation gun 12 is moved above the range set in S12.
  • the beam irradiation gun 12 is driven by a beam irradiation gun drive mechanism 72 to irradiate the surface of the semiconductor substrate 41 with the beam 14.
  • the third beam irradiation is performed in a range corresponding to a position immediately above the hollow region 42 on the surface of the semiconductor substrate 41 and toward a position different from both the first opening 44 and the second opening 45.
  • a third opening 46 is formed at a position different from the first opening 44 and the second opening 45 (see FIG. 3G).
  • FIG. 3G shows a cross section of the semiconductor substrate 41 in which the third opening 46 is formed.
  • the first opening 44 and the second opening 45 are formed in a direction perpendicular to the surface of the semiconductor substrate 41.
  • the third opening 46 is formed obliquely with respect to the surface of the semiconductor substrate 41 as shown in FIG. 3F.
  • the wedge-shaped observation sample can be separated from the semiconductor substrate 41 by the third opening 46 formed in the oblique direction and the second opening 45.
  • Step S27 Next, in step S ⁇ b> 27, the observation sample is extracted from the semiconductor substrate 41 by the probe 13.
  • the probe driving mechanism 73 drives the probe 13 based on a command from the control unit 81 and moves the probe 13 above the position between the second opening 45 and the third opening 46.
  • the probe 13 is driven by the probe driving mechanism 73 to extract the observation sample 47 separated from the semiconductor substrate 41 by the second opening 45 and the third opening 46 from the semiconductor substrate 41 (see FIG. 3H).
  • FIG. 3H shows a cross section of the semiconductor substrate 41 after the observation sample 47 is extracted.
  • the beam irradiation gun 12 may additionally irradiate the semiconductor substrate 41 in the state shown in FIG. 3G as necessary. Extraction of the observation sample 47 using the probe 13 can be performed in the same manner as a general sample extraction method performed using a focused ion beam apparatus.
  • the configuration in which the cleaning liquid is discharged from the cleaning liquid supply line and the filler 53 is removed from the semiconductor substrate 41 has been described.
  • the removal of the filler 53 is not necessarily performed using a cleaning liquid.
  • the solid filler 53 is changed by temperature adjustment. After forming the liquid filler 51, the liquid filler 51 may be sucked and removed from the suction nozzle 33.
  • the solid filler 53 can be easily removed from the semiconductor substrate 41 by discharging the cleaning liquid from the cleaning liquid supply line.
  • the filler 51 and the cleaning liquid are discharged and sucked while the discharge nozzle 23 and the suction nozzle 33 are both separated from the surface of the semiconductor substrate 41. For this reason, it is possible to prevent foreign matter from adhering to the surface of the semiconductor substrate 41.
  • the discharge nozzle 23 and the suction nozzle 33 may be brought into contact with the surface of the semiconductor substrate 41 as necessary when the filler 51 or the cleaning liquid is discharged or sucked.
  • FIGS. 4A to 4G show in detail the shape changes of the hollow region 42 and the membrane 43 of the semiconductor substrate 41, and the other configurations shown in FIGS. 3A to 3H are not shown.
  • FIG. 4A is a perspective view showing an appearance of the vicinity of the hollow region 42 of the semiconductor substrate 41 in the initial state before the cross-section processing is performed by focused ion beam irradiation. 4A, the hollow region 42 is not exposed to the outside. However, in FIG. 4A, in order to explain the internal state of the hollow region 42, the hollow region 42 is shown exposed for convenience.
  • the lower end surface of the hollow region 42 is a flat surface parallel to the horizontal plane.
  • the membrane 43 formed on the upper side of the hollow region 42 is bent due to the stress of the membrane 43 itself and the surrounding membrane, and the upper end surface of the hollow region 42 has a curved surface shape due to the bending of the membrane 43. Yes.
  • FIG. 4A the position of the first cross-section processed surface 61 on which the first beam irradiation is performed is indicated by a broken line.
  • the first opening 44 is formed by the first cross-section processing by beam irradiation performed along the first cross-section processing surface 61 (see FIG. 3B).
  • FIG. 4B shows a perspective view of the appearance of the semiconductor substrate 41 in the vicinity of the first opening 44 after the first cross-section processing.
  • FIG. 4B corresponds to the state of FIG. 3B.
  • the membrane 43 is deformed by the first beam irradiation. As shown in FIG. 4B, in the semiconductor substrate 41 after the first beam irradiation, due to the deformation of the membrane 43, a stiction phenomenon in which the membrane 43 and the semiconductor substrate 41 come into contact with each other in a part of the hollow region 42 occurs. ing.
  • FIG. 4C shows a perspective view of the appearance of the semiconductor substrate 41 in the vicinity of the first opening 44 after the liquid filler 51 is filled.
  • FIG. 4C corresponds to the state of FIG. 3C.
  • a void 442 in which the stiction phenomenon does not occur remains in the processed cross section 441 of the first opening 44, and the hollow material 42 is filled with the filler 51 from the void 442.
  • step S ⁇ b> 18 the liquid filler 51 is solidified by heating by the heater 16, and the solid filler 53 is formed in the hollow region 42.
  • FIG. 4D shows an external perspective view of the semiconductor substrate 41 in the vicinity of the first opening 44 after the solid filler 53 is formed.
  • FIG. 4D corresponds to the state of FIG. 3D.
  • step S19 the semiconductor substrate 41 after the solid filler 53 is formed is subjected to cross-section processing by second beam irradiation.
  • FIG. 4E the position of the second cross-section processing surface 62 that performs the second beam irradiation is indicated by a broken line. Note that the state shown in FIG. 4E is the same as the state shown in FIG. 4D.
  • the second cross-section processing surface 62 is set at a position different from the first cross-section processing surface 61 shown in FIG. 4A.
  • the second cross-section processing surface 62 includes a region where a stiction phenomenon due to deformation of the membrane 43 does not occur during the first cross-section processing, that is, a region where the filler 53 is formed.
  • FIG. 4F shows an external perspective view of the semiconductor substrate 41 in the vicinity of the second opening 45 after the second cross-section processing. 4F corresponds to the state of FIG. 3E.
  • the cross section processing is performed at a position including the region where the solid filler 53 is formed. For this reason, at the time of the second cross-section processing, it is possible to form the second opening 45 in which the deformation of the membrane 43 is suppressed and the occurrence of the stiction phenomenon is suppressed. As shown in FIG. 4F, in the second opening 45, the hollow region 42 is exposed by the processing section 451 including the surface formed by the filler 53.
  • FIG. 4G shows an external perspective view of the semiconductor substrate 41 in the vicinity of the second opening 45 after the filler 53 is removed.
  • FIG. 4G corresponds to the state of FIG. 3F.
  • the membrane 43 after the removal of the filler 53 has a shape close to the shape of the membrane 43 before the cross-section processing (see FIG. 4A), as shown in FIG. 4G.
  • the cross-sectional observation sample preparation method of Example 2 can be performed using an apparatus similar to the cross-sectional observation sample preparation apparatus 200 used in Example 1. A method for preparing a cross-sectional observation sample of Example 2 will be described with reference to the flowchart shown in FIG. 5 and FIGS. 6A to 6C.
  • the cross-sectional observation sample preparation method of Example 2 is a partial modification of Step S13 of the cross-section observation sample preparation method of Example 1, and the other steps are the same as the steps of the cross-section observation sample preparation method of Example 1. Do the same.
  • FIG. 6A is a perspective view showing an appearance of the vicinity of the hollow region 42 of the semiconductor substrate 41 in an initial state before the cross-section processing is performed by focused ion beam irradiation.
  • the sample is a semiconductor substrate 41.
  • a hollow region 42 is formed inside the semiconductor substrate 41, and a membrane 43 is formed on the hollow region 42.
  • Steps S11 to S12 are performed in the same manner as in the first embodiment. For this reason, description of step S11 to step S12 is omitted.
  • step S13 a first beam irradiation is performed toward the surface of the semiconductor substrate 41 to form a first opening 44 (see FIG. 6B).
  • FIG. 6B shows a cross section of the semiconductor substrate 41 after the first beam 14 irradiation.
  • a first opening 44 is formed on the surface of the semiconductor substrate 41 by the first irradiation of the beam 14.
  • the first opening 44 is penetrated to the upper end surface of the hollow region 42, and the lower end thereof is formed so as not to exceed the lower end surface of the hollow region 42. Thereby, the cutting amount of the semiconductor substrate 41 when the first opening 44 is formed can be reduced.
  • the first opening 44 may be formed in a linear shape on the top surface or may be formed in a dot shape. By forming the upper surface shape of the first opening 44 in a dot shape, the cutting amount of the semiconductor substrate 41 when the first opening 44 is formed can be further reduced. Except for the points described above, step S13 can be performed in the same manner as in the first embodiment.
  • step S14 to step S16 the support base 11 is rotationally driven and the discharge nozzle 23 is moved.
  • Steps S14 to S16 are performed in the same manner as in the first embodiment, and thus description thereof is omitted.
  • FIG. 6C shows a cross section of the semiconductor substrate 41 after the hollow region 42 is filled with the filler 51. Filling the hollow region 42 with the filler 51 is performed in the same manner as in step S17 of the first embodiment. Also in Example 2, as shown in FIG. 6C, the hollow region 42 is filled with the liquid filler 51.
  • the amount of the semiconductor substrate 41 that is removed when the first opening 44 is formed can be reduced by making the first opening 44 shallower than the first embodiment. For this reason, the time required for forming the first opening 44 can be shortened.
  • the volume of the first opening 44 is reduced as compared with the first embodiment. Further, when the first opening 44 is formed in a dot shape, the opening area of the semiconductor substrate 41 is reduced. For this reason, in Example 2, compared with Example 1, it becomes difficult to fill the whole hollow region 42 with the liquid filler 51. For this reason, in Example 2, it is desirable to select and use the liquid filler 51 having a lower viscosity at the time of filling.
  • the cross-sectional observation sample preparation apparatus and the cross-sectional observation sample preparation method of Example 1 and Example 2 described above can be suitably used for preparing a cross-sectional observation sample of a semiconductor substrate having a hollow region such as a MEMS device.

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Abstract

L'invention concerne un dispositif de préparation d'échantillon pour observation en coupe (100) qui comprend : un socle de support (11) ; un pistolet d'irradiation de faisceau (12) ; une sonde (13) ; une conduite d'alimentation de charge pour fournir une charge vers la surface d'un substrat semi-conducteur (41) maintenu sur le socle de support (11) ; une buse d'évacuation (23) qui est reliée à la conduite d'alimentation de charge et évacue la charge sur la surface du substrat semi-conducteur (41) ; une buse d'aspiration (33) pour aspirer la charge depuis la surface du substrat semi-conducteur (41) ; une conduite de vide (31) pour récupérer la charge qui a été aspirée par la buse d'aspiration (33) ; un mécanisme de régulation de température (71) pour réguler la température du socle de support (11) ; un mécanisme de mouvement de buse d'évacuation (74) pour déplacer la buse d'évacuation (23) ; et un mécanisme de mouvement de buse d'aspiration (75) pour déplacer la buse d'aspiration (33).
PCT/JP2015/084093 2015-12-04 2015-12-04 Dispositif de préparation d'échantillon pour observation en coupe, et procédé de préparation d'échantillon pour observation en coupe WO2017094176A1 (fr)

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PCT/JP2015/084093 WO2017094176A1 (fr) 2015-12-04 2015-12-04 Dispositif de préparation d'échantillon pour observation en coupe, et procédé de préparation d'échantillon pour observation en coupe

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PCT/JP2015/084093 WO2017094176A1 (fr) 2015-12-04 2015-12-04 Dispositif de préparation d'échantillon pour observation en coupe, et procédé de préparation d'échantillon pour observation en coupe

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001264225A (ja) * 2000-03-15 2001-09-26 Hitachi Ltd 試料作製方法
JP2014092496A (ja) * 2012-11-06 2014-05-19 Hitachi High-Technologies Corp イオン液体を用いた試料観察方法
JP2015501734A (ja) * 2011-12-07 2015-01-19 ジョージア・テック・リサーチ・コーポレーション パッケージングに適合する、ｍｅｍｓデバイスのウェハレベルキャッピング

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001264225A (ja) * 2000-03-15 2001-09-26 Hitachi Ltd 試料作製方法
JP2015501734A (ja) * 2011-12-07 2015-01-19 ジョージア・テック・リサーチ・コーポレーション パッケージングに適合する、ｍｅｍｓデバイスのウェハレベルキャッピング
JP2014092496A (ja) * 2012-11-06 2014-05-19 Hitachi High-Technologies Corp イオン液体を用いた試料観察方法

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