WO2017090890A1 - Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière - Google Patents

Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière Download PDF

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Publication number
WO2017090890A1
WO2017090890A1 PCT/KR2016/011745 KR2016011745W WO2017090890A1 WO 2017090890 A1 WO2017090890 A1 WO 2017090890A1 KR 2016011745 W KR2016011745 W KR 2016011745W WO 2017090890 A1 WO2017090890 A1 WO 2017090890A1
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Prior art keywords
epoxy resin
resin composition
formula
semiconductor device
weight
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PCT/KR2016/011745
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English (en)
Korean (ko)
Inventor
한승
정주영
김민겸
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삼성에스디아이 주식회사
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Priority to CN201680069339.4A priority Critical patent/CN108291052B/zh
Publication of WO2017090890A1 publication Critical patent/WO2017090890A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/50—Phosphorus bound to carbon only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection

Definitions

  • the present invention relates to an epoxy resin composition for semiconductor device sealing and a semiconductor device sealed using the same. More specifically, it is possible to minimize the reduction in shrinkage, curing strength and continuous workability of the epoxy resin composition according to the addition of the flame-retardant material including a phosphorus-based flame retardant of a specific structure, epoxy resin for sealing a semiconductor device exhibiting excellent flame retardancy and the same It relates to a semiconductor element sealed using.
  • organic flame retardants phosphorus-based flame retardants such as phosphazene and phosphate esters or resins containing nitrogen have been studied.
  • nitrogen-containing resin the flame retardancy is not sufficient, and in the case of phosphorus-based flame retardant, even if only a small amount is used, there is a problem that the shrinkage ratio of the epoxy resin composition is increased, and the glass transition temperature after curing of the resin composition is lowered.
  • An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device that can implement excellent flame retardancy while minimizing the physical properties such as shrinkage, curing strength and workability due to the addition of flame retardant.
  • Another object of the present invention is to provide a semiconductor device sealed by the epoxy resin composition as described above.
  • the present invention provides an epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, an inorganic filler and a flame retardant represented by the following formula (1).
  • R is hydrogen or a hydrocarbon group of 1 to 20 carbon atoms.
  • R may be hydrogen, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms, and more preferably, R is It may be a phenyl group, a biphenyl group or a naphthalene group.
  • the flame retardant may be represented by the following formula (2) or formula (3).
  • the flame retardant may be included in about 0.01% to about 3% by weight of the epoxy resin composition.
  • the epoxy resin composition is about 0.1% to about 15% by weight of the epoxy resin, about 0.1% to about 13% by weight of the curing agent, about 70% to about 95% by weight of the inorganic filler and flame retardant represented by Formula 1 0.01 wt% to about 3 wt%.
  • the present invention provides a semiconductor device sealed by the epoxy resin composition according to the present invention.
  • the epoxy resin composition according to the present invention exhibits excellent flame retardancy while minimizing deterioration in shrinkage, curing strength and continuous workability of the epoxy resin composition due to the addition of the flame retardant by using a phosphorus-based flame retardant.
  • X-Y which shows a range means "X or more and Y or less.”
  • the epoxy resin composition for semiconductor element sealing of this invention contains an epoxy resin, a hardening
  • the flame retardant may be represented by the following formula (1).
  • R is hydrogen or a hydrocarbon group of 1 to 20 carbon atoms, preferably, hydrogen, an alkyl group of 1 to 20 carbon atoms, an alkenyl group of 1 to 20 carbon atoms, an alkoxy group of 1 to 20 carbon atoms or 6 to 6 carbon atoms 20 may be an aryl group. More preferably, R may be a phenyl group, a biphenyl group or a naphthalene group.
  • the present inventors conducted a study to develop a technology that can realize a sufficient flame retardancy without lowering the existing physical properties of the epoxy resin composition, when using the flame retardant represented by the formula (1), curing shrinkage rate, strength after curing, work It was found that excellent flame retardancy can be realized without deteriorating physical properties such as properties, and completed the present invention.
  • the flame retardant represented by Chemical Formula 1 may be represented by the following Chemical Formula 2 or Chemical Formula 3.
  • the flame retardant represented by Chemical Formula 1 may be included in about 0.01% to about 3% by weight, preferably about 0.05% to about 1% by weight of the epoxy resin composition.
  • the content of the flame retardant is within the above range, it is possible to implement excellent flame retardant properties without deteriorating the physical properties of the resin composition.
  • the epoxy resin may be used epoxy resins generally used for semiconductor device sealing, it is not particularly limited.
  • an epoxy compound containing two or more epoxy groups in a molecule may be used as the epoxy resin.
  • Such epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, polyfunctional type epoxy resins, naphthol novolak type epoxys, etc.
  • Resins novolac epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, and the like.
  • the epoxy resin may include at least one of a cresol novolac epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin and a biphenyl type epoxy resin.
  • the multifunctional epoxy resin may be, for example, an epoxy resin represented by the following Formula (4).
  • R1, R2, R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 10 carbon atoms
  • R6 and R7 are each independently a hydrogen atom, a methyl group, or an ethyl group
  • a is 0 to 6 Is an integer.
  • R1, R2, R3, R4 and R5 are each independently hydrogen, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group or hexyl group
  • R6 and R7 may be hydrogen, but are not necessarily limited thereto.
  • the multifunctional epoxy resin of [Formula 4] can reduce the deformation of the package, and has excellent advantages in fast curing, latentness and preservation, as well as excellent cured strength and adhesiveness.
  • the multifunctional epoxy resin composition may be a triphenol alkane type epoxy resin such as a triphenol methane type epoxy resin, a triphenol propane type epoxy resin, or the like.
  • the phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following Formula 5.
  • the phenol aralkyl type epoxy resin of [Formula 5] forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidation resistance, and crack resistance. While forming a carbon layer (char) has the advantage that it can secure a certain level of flame resistance in itself.
  • the biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by the following formula (6).
  • R8, R9, R10, R11, R12, R13, R14 and R15 are each independently an alkyl group having 1 to 4 carbon atoms, the average value of c is 0 to 7.
  • the biphenyl type epoxy resin of the above [Formula 6] is preferable from the viewpoint of fluidity and reliability strengthening of the resin composition.
  • epoxy resins may be used alone or in combination, and are additive compounds made by preliminary reactions such as melt master batches with other components such as hardeners, curing accelerators, mold release agents, coupling agents, and stress relieving agents. It can also be used in the form. On the other hand, in order to improve the moisture resistance reliability, it is preferable to use the epoxy resin that is low in chlorine ions, sodium ions, and other ionic impurities contained in the epoxy resin.
  • the epoxy resin is about 0.1% to about 15% by weight of the epoxy resin composition for sealing semiconductor devices, specifically about 0.1% to about 12% by weight, more specifically about 3% to about 12% by weight It may be included in the content of.
  • the content of the epoxy resin satisfies the above range, it is possible to better implement the adhesive strength and strength of the epoxy resin composition after curing.
  • curing agents generally used for sealing semiconductor devices may be used without limitation, and preferably, curing agents having two or more reactors may be used.
  • a phenol aralkyl type phenol resin such as acid anhydride, metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, and the like may be used, but are not limited thereto.
  • the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.
  • the phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following [Formula 7], and the phenol aralkyl type phenol resin is represented by, for example, [Formula 8] below It may be a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule thereof.
  • the xylloxyl phenolic resin may be, for example, a xyloxyl phenolic resin represented by the following [Formula 9], and the polyfunctional phenolic resin is, for example, represented by the following [Formula 10] It may be a polyfunctional phenol resin containing the repeating unit represented.
  • d is 1 to 7.
  • the average value of g in [Formula 10] is 1 to 7.
  • curing agents may be used alone or in combination, and may also be used as additive compounds made by preliminary reactions such as melt master batches with other components such as epoxy resins, curing accelerators, release agents, coupling agents, and stress relaxation agents.
  • the curing agent may be included in about 0.1% to about 13% by weight, preferably about 0.1% to about 10% by weight, more preferably about 0.1% to about 8% by weight of the epoxy resin composition.
  • the content of the curing agent satisfies the above range, the curing degree of the epoxy resin composition and the strength of the cured product are excellent.
  • the compounding ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package.
  • the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75.
  • the inorganic fillers may be used without limitation, general inorganic fillers used in the semiconductor sealing material, it is not particularly limited.
  • the inorganic filler fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
  • molten silica having a low coefficient of linear expansion is used to reduce stress.
  • Fused silica refers to amorphous silica having a specific gravity of about 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the shape and particle diameter of the molten silica are not particularly limited, but the spherical molten silica having a spherical molten silica having an average particle diameter of about 5 ⁇ m to about 30 ⁇ m and a spherical molten silica having an average particle diameter of about 0.001 ⁇ m to about 1 ⁇ m Preferably comprises from about 40% to about 100% by weight of the molten silica mixture comprising about 1% to about 50% by weight relative to the total filler. Moreover, according to a use, the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler may be included in about 70% to about 95% by weight, for example about 80% to about 90% or about 83% to about 97% by weight of the epoxy resin composition. Within this range, flame retardancy, fluidity and reliability of the epoxy resin composition can be ensured.
  • the epoxy resin composition which concerns on this invention can further contain a hardening accelerator as needed.
  • the curing accelerator is a substance that promotes the reaction of the epoxy resin and the curing agent.
  • a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example.
  • Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
  • organometallic compound examples include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
  • Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts.
  • the imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4.
  • boron compound examples include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like.
  • 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN)
  • 1, 8- diazabicyclo [5.4. 0] undec-7-ene 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU
  • phenol novolak resin salts and the like.
  • an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator.
  • the curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
  • the amount of the curing accelerator used in the present invention may be about 0.01% to about 2% by weight based on the total weight of the epoxy resin composition, specifically about 0.02% to about 1.5% by weight, more specifically about 0.05% to about It may be about 1% by weight. In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
  • the epoxy resin composition of the present invention may further include a conventional additive contained in the composition.
  • the additive may comprise one or more of a coupling agent, a release agent, a stress relaxer, a crosslinking enhancer, a leveling agent, a colorant.
  • the coupling agent may use one or more selected from the group consisting of epoxysilane, aminosilane, mercaptosilane, alkylsilane and alkoxysilane, but is not limited thereto.
  • the coupling agent may be included in about 0.1% to about 1% by weight of the epoxy resin composition.
  • the release agent may use one or more selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt.
  • the release agent may be included in about 0.1% to about 1% by weight of the epoxy resin composition.
  • the stress relieving agent may use one or more selected from the group consisting of modified silicone oils, silicone elastomers, silicone powders and silicone resins, but is not limited thereto.
  • the stress relieving agent is preferably contained in 0 to about 6.5% by weight, for example from about 0.1% to about 1% by weight in the epoxy resin composition, may optionally be included, both may be contained.
  • the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and the total epoxy resin composition by mixing one or two or more kinds of a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, and a silicone oil having a carboxyl functional group. About 0.05% to about 1.5% by weight relative to about 20% by weight.
  • the silicone oil exceeds about 1.5% by weight or more, surface contamination is likely to occur and the resin bleed may be long, and when used below about 0.05% by weight, sufficient low modulus of elasticity may not be obtained. There may be.
  • the silicon powder has a central particle diameter of 15 ⁇ m or less because it does not act as a cause of the deterioration of moldability, and is about 0 to about 5 wt%, for example, about 0.1 wt% to about 5 wt% based on the total resin composition. It may be contained in%.
  • Colorants are for laser marking of semiconductor device sealants, and colorants commonly used in the art, such as carbon black, titanium nitride, titanium black, copper phosphate hydroxide, iron oxides, mica or combinations thereof, may be used. Can be. Colorants may be included from about 0.05% to about 4.0% by weight in the epoxy resin composition. Within this range, incomplete marking of the epoxy resin composition can be prevented from occurring, soot can be prevented from occurring due to sooting during marking, and electrical insulation of the resin composition can be prevented from deteriorating.
  • the additive may be included in about 0.1% to about 10% by weight, for example about 0.1% to about 3% by weight of the epoxy resin composition.
  • a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or Lodige mixer, and then roll-mill After kneading with a kneader or a kneader, cooling and grinding are used to obtain a final powder product.
  • a low pressure transfer molding method can be generally used as a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention.
  • the present invention is not limited thereto, and molding may also be performed by an injection molding method or a casting method.
  • the epoxy resin composition is preplated with a copper lead frame (e.g., silver plated copper lead frame), a nickel alloy lead frame, and a material containing nickel and palladium in the lead frame by the above method.
  • a semiconductor device in which a semiconductor device is sealed may be manufactured by attaching a lead frame, a PCB, or the like plated with one or more of Ag) and gold (Au).
  • (C) Curing accelerator Triphenylphosphine from Hokko, a triphenylphosphine, was used.
  • (D) Inorganic filler A spherical molten silica having an average particle diameter of 18 ⁇ m and a spherical molten silica having an average particle diameter of 0.5 ⁇ m were mixed and used in a weight ratio of 9 to 1.
  • KBM-803 (Shinetsu), a mercaptopropyltrimethoxysilane (E1), and SZ-6070 (Dow Corning Chemical, Inc.), a methyltrimethoxysilane, were used in combination.
  • Carnauba wax was used as the release agent (f1) and carbon black MA-600 (Matsusita Chemical Co., Ltd.) was used as the colorant.
  • the components were weighed according to the composition of Table 1 below, and then uniformly mixed using a Henschel mixer (KEUM SUNG MACHINERY CO.LTD (KSM-22)) to prepare a powder-based primary composition. Then, melt kneading at 95 ° C. using a continuous kneader, followed by cooling and pulverization to prepare an epoxy resin composition for sealing a semiconductor device.
  • a Henschel mixer KEUM SUNG MACHINERY CO.LTD (KSM-22)
  • Flowability (inch) Flow length was measured using a transfer molding press at 175 ° C. and 70 kgf / cm 2 using an evaluation mold according to EMMI-1-66. The higher the measured value, the better the fluidity.
  • Hardening shrinkage (%): Molded specimens (125 ⁇ 12.6 ⁇ ) using a transfer molding press at 175 ° C. and 70 kgf / cm 2 using ASTM molds for flexural strength specimen preparation for the prepared composition. 6.4 mm). The obtained specimen was placed in an oven at 170 ° C. to 180 ° C. for 4 hours, post-cured (PMC: post molding cure), and then cooled. The length of the specimen was measured by a caliper. The cure shrinkage was calculated from the following equation 1.
  • C is the length of the specimen obtained by the transfer molding press of the epoxy resin composition at 175 °C, 70kgf / cm 2
  • D is the specimen obtained after curing and cooling the specimen at 170 ⁇ 180 °C 4 hours Length).
  • Release force The mold release force test mold was cleaned three times at 175 ° C. for 300 seconds using melamine resin, and then molded twice at 175 ° C. for 300 seconds using Tablet wax to apply Wax to the test mold. After the epoxy resin composition prepared as described above was molded at 175 ° C. for 120 seconds, a release force with a mold was measured using a release force measuring device. The release force was measured 50 times, and the force was measured using a force pull gauge.

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Abstract

La présente invention concerne une composition de résine époxyde pour colmater un dispositif à semi-conducteurs, la composition contenant une résine époxyde, un agent de durcissement, une charge inorganique et un retardateur de flamme représenté par la formule chimique 1, et un dispositif à semi-conducteurs colmaté à l'aide de celle-ci. Dans la formule chimique, R représente un groupe hydrogène ou un groupe hydrocarbure en C1-C20.
PCT/KR2016/011745 2015-11-26 2016-10-19 Composition de résine époxyde pour colmater un dispositif à semi-conducteurs et dispositif à semi-conducteurs colmaté à l'aide de cette dernière WO2017090890A1 (fr)

Priority Applications (1)

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CN201680069339.4A CN108291052B (zh) 2015-11-26 2016-10-19 用于密封半导体器件的环氧树脂组合物以及使用其密封的半导体器件

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KR10-2015-0166792 2015-11-26
KR1020150166792A KR101922288B1 (ko) 2015-11-26 2015-11-26 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자

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WO2017090890A1 true WO2017090890A1 (fr) 2017-06-01

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JP2004269586A (ja) * 2003-03-05 2004-09-30 Sumitomo Bakelite Co Ltd 硬化促進剤、エポキシ樹脂組成物および半導体装置
US20110201724A1 (en) * 2008-10-29 2011-08-18 Levchik Sergei V Phosphorous-Containing Flame Retardant Epoxy Resin Composition, Prepreg and Laminate Thereof
KR20140082528A (ko) * 2012-12-24 2014-07-02 제일모직주식회사 4가 포스포늄염, 이를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
KR20150011747A (ko) * 2013-07-23 2015-02-02 제일모직주식회사 포스포늄 이온 함유 화합물, 이를 포함하는 에폭시수지 조성물, 및 이를 사용하여 제조된 장치

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KR101309820B1 (ko) * 2010-12-29 2013-09-23 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
KR101659128B1 (ko) * 2013-09-30 2016-09-22 제일모직주식회사 이방성 도전 필름 및 이를 이용한 반도체 장치
US9868751B2 (en) * 2014-10-22 2018-01-16 Samsung Sdi Co., Ltd. Phosphonium compound, epoxy resin composition including the same and semiconductor device prepared from the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002105171A (ja) * 2000-09-29 2002-04-10 Sumitomo Bakelite Co Ltd 積層板用エポキシ樹脂組成物、並びにこれを用いたプリプレグおよび積層板
JP2004269586A (ja) * 2003-03-05 2004-09-30 Sumitomo Bakelite Co Ltd 硬化促進剤、エポキシ樹脂組成物および半導体装置
US20110201724A1 (en) * 2008-10-29 2011-08-18 Levchik Sergei V Phosphorous-Containing Flame Retardant Epoxy Resin Composition, Prepreg and Laminate Thereof
KR20140082528A (ko) * 2012-12-24 2014-07-02 제일모직주식회사 4가 포스포늄염, 이를 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
KR20150011747A (ko) * 2013-07-23 2015-02-02 제일모직주식회사 포스포늄 이온 함유 화합물, 이를 포함하는 에폭시수지 조성물, 및 이를 사용하여 제조된 장치

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CN108291052B (zh) 2020-07-03
KR101922288B1 (ko) 2018-11-27
KR20170061817A (ko) 2017-06-07
CN108291052A (zh) 2018-07-17

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