WO2017222151A1 - Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur - Google Patents

Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur Download PDF

Info

Publication number
WO2017222151A1
WO2017222151A1 PCT/KR2017/003325 KR2017003325W WO2017222151A1 WO 2017222151 A1 WO2017222151 A1 WO 2017222151A1 KR 2017003325 W KR2017003325 W KR 2017003325W WO 2017222151 A1 WO2017222151 A1 WO 2017222151A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
resin composition
sealing
epoxy resin
substrate
Prior art date
Application number
PCT/KR2017/003325
Other languages
English (en)
Korean (ko)
Inventor
이윤만
배경철
박용엽
이은정
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Priority to CN201780038924.2A priority Critical patent/CN109328204B/zh
Publication of WO2017222151A1 publication Critical patent/WO2017222151A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/28—Di-epoxy compounds containing acyclic nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/16—Applications used for films
    • C08L2203/162—Applications used for films sealable films
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets

Definitions

  • the present invention relates to an epoxy resin composition for semiconductor encapsulation, an encapsulant and a semiconductor package including the same. More specifically, the present invention relates to an epoxy resin composition for sealing a solid phase semiconductor, which can minimize warpage due to a low coefficient of thermal expansion and a high glass transition temperature, and an encapsulant and a semiconductor package including the same.
  • the method of sealing a semiconductor element with an epoxy resin composition is commercially performed for the purpose of protecting a semiconductor element from external environments, such as moisture or a mechanical shock.
  • semiconductor chips are manufactured by cutting a wafer to manufacture semiconductor chips, and then packaging is performed in units of semiconductor chips, but packaging is performed in a wafer state not recently cut, and then semiconductor chips.
  • a process of cutting with a has been developed. In general, the former method is called Chip Scale Package (CSP) and the latter process is called Wafer Level Packaging (WLP).
  • CSP Chip Scale Package
  • WLP Wafer Level Packaging
  • Wafer-level packaging has advantages in that the process is simpler than the chip scale packaging process, and the package thickness is reduced, thereby reducing the semiconductor mounting space.
  • the wafer level packaging has a problem in that warpage due to the difference in thermal expansion rate between the wafer and the encapsulant is large because the film forming area is larger than that of the chip scale packaging for sealing the individual chips. If warping occurs, it will affect the yield and wafer handling of subsequent processes.
  • liquid type epoxy resin or silicone resin is mainly used as an encapsulant for wafer level packaging.
  • these encapsulants have poor storage stability, which is poor in storageability, impossible to re-storage after aging, and a filler content in the composition.
  • Another object of the present invention is to provide an epoxy resin composition for solid-state particulate semiconductor sealing, which can realize excellent durability even when applied to wafer level packaging, and is easy to store and use.
  • Still another object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation having excellent adhesion to a redistribution layer (RDL).
  • RDL redistribution layer
  • Still another object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation, which can realize excellent reliability with low moisture absorption.
  • Still another object of the present invention is to provide an encapsulant and a semiconductor package including the epoxy resin composition for semiconductor encapsulation as described above.
  • the solid-state semiconductor element sealing resin composition is an epoxy resin containing a compound represented by the formula (1); Curing agent; And inorganic fillers.
  • R1 to R12 are each independently hydrogen, a substituent containing a nitrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C3-C30 A heteroaryl group, a substituted or unsubstituted C3-C10 heterocycloalkyl group, a substituted or unsubstituted C7-C30 arylalkyl group, or a substituted or unsubstituted C1-C30 heteroalkyl group, at least one of the above R1 to R12 At least one is a substituted or unsubstituted C 6 -C 30 aryl group or a substituent containing a nitrogen atom.
  • the C6 ⁇ C30 aryl group may be a phenyl group, biphenyl group, naphthyl group, naphthol group, or anthracenyl group.
  • the epoxy resin may include at least one or more of the compounds represented by Formulas 1a to 1d.
  • the composition may comprise about 0.1 to about 15 weight percent of the epoxy resin, about 0.1 to about 13 weight percent of the curing agent and about 70 to about 95 weight percent of the inorganic filler.
  • the encapsulant includes the resin composition for sealing the solid-state semiconductor element.
  • the encapsulant may be tablet type, film type or sheet type.
  • Another aspect of the invention relates to a semiconductor package.
  • the semiconductor package comprises a substrate; A semiconductor device mounted on the substrate; A sealing layer formed on the substrate to encapsulate at least a portion of the semiconductor device; And a connection terminal formed under the substrate, wherein the sealing layer includes the resin composition for sealing the solid-state semiconductor element.
  • the substrate may be a circuit board, a lead frame substrate or a substrate including a redistribution layer.
  • the semiconductor device may be one in which a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV).
  • TSV through silicon via
  • the semiconductor package includes a substrate including a redistribution layer; A semiconductor device disposed on the redistribution layer; A sealing layer formed on the redistribution layer to seal at least a portion of the semiconductor device; And a connection terminal formed under the substrate, wherein the sealing layer includes the resin composition for sealing the solid-state semiconductor element.
  • the semiconductor package comprises a substrate; A semiconductor device mounted on the substrate through an adhesive member, wherein a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV); A connection terminal is formed below the substrate, and the sealing layer includes the resin composition for sealing the solid-state semiconductor device.
  • TSV through silicon via
  • the present invention has a low coefficient of thermal expansion, high glass transition temperature to minimize warpage, excellent durability even when applied to wafer level packaging, and is easy to store and use in a solid rather than liquid form.
  • RDL re-distribution layer
  • FIG. 1 is a view schematically showing an embodiment of a semiconductor package according to the present invention.
  • FIG. 2 is a view schematically showing another embodiment of a semiconductor package according to the present invention.
  • Positional relationships such as 'top', 'top', 'bottom', and 'bottom' are described based on the drawings and do not represent absolute positional relationships. That is, the positions of the 'top' and 'bottom' or 'top' and 'bottom' may be changed depending on the position to be observed.
  • substituted in “substituted or unsubstituted” means that at least one hydrogen atom of the functional group is a hydroxyl group, a halogen, an amino group, a nitro group, a cyano group, a carboxyl group, a C1-C20 alkyl group, a C1-C20 Alkenyl group, C1-C20 alkynyl group, C1-C20 haloalkyl group, C6-C30 aryl group, C3-C30 heteroaryl group, C3-C10 cycloalkyl group, C3-C10 heterocycloalkyl group, C7-C30 An arylalkyl group, C1 ⁇ C30 It is substituted with a heteroalkyl group, "halogen” means fluorine, chlorine, iodine or bromine.
  • aryl group means a substituent in which all elements of a cyclic substituent have p-orbital and p-orbital forms a conjugate, and a single ring structure or two or more rings are fused. It includes a multi-ring structure, for example, it may mean a phenyl group, biphenyl group, naphthyl group, naphthol group, anthracenyl group and the like, but is not limited thereto.
  • the "heteroaryl group” means one to three atoms selected from the group consisting of nitrogen, oxygen, sulfur and phosphorus in the aryl group of C6 to C30 and the rest are carbon, for example, Dinyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, acridinyl, quinazolinyl, cshinolinyl, phthalazinyl, thiazolyl, benzothia Zolyl, isoxazolyl, benzisoxazolyl, oxazolyl, benzoxazolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, furinyl, thiophenyl, benzothiophenyl, furanyl, benzofuranyl, iso Benzofuranyl, and the like,
  • 'hetero' in the 'heterocycloalkyl group', 'heteroaryl group', 'heterocycloalkylene group', and 'heteroarylene group' means nitrogen, oxygen, sulfur or phosphorus atoms.
  • X-Y which shows a range means "X or more and Y or less.”
  • the epoxy resin composition of this invention contains (A) epoxy resin, (B) hardening
  • the epoxy resin used in the present invention includes an alicyclic epoxy compound represented by the following formula (1).
  • R1 to R12 are each independently a substituent containing a hydrogen, a nitrogen atom, substituted or unsubstituted C1 ⁇ C20 alkyl group, substituted or unsubstituted C6 ⁇ C30 aryl group, substituted or unsubstituted C3 ⁇ C30 heteroaryl group, substituted or unsubstituted C3 ⁇ C10 heterocycloalkyl group, substituted or unsubstituted C7 ⁇ C30 is an arylalkyl group or a substituted or unsubstituted C1-C30 heteroalkyl group, and at least one of R1 to R12 is a substituted or unsubstituted C6 to C30 aryl group or a substituent containing a nitrogen atom.
  • the C6 to C30 aryl group may be a phenyl group, biphenyl group, naphthyl group, naphthol group or anthracenyl group.
  • the compound having an alicyclic epoxy structure as shown in Formula 1 has a high coefficient of thermal expansion and a high glass transition temperature, it is possible to effectively suppress warpage of a semiconductor package by using an epoxy resin to which the compound is applied.
  • the compound having an alicyclic epoxy structure as shown in Formula 1 and containing a substituent containing a nitrogen atom as the epoxy resin it is possible to excellently implement the adhesive force with the redistribution layer (Re-Distribution Layer, RDL).
  • the semiconductor device is sealed on the carrier wafer to facilitate packaging of the input / output terminals, the carrier wafer is removed, and the sealed semiconductor device is formed on the substrate on which the dielectric and metal layers are alternately stacked. A method of relocating on (Re-Distribution Layer, RDL) is used.
  • the redistribution layer (RDL) is formed by using a negative photoresist such as polybenzoazole, the adhesion force between the epoxy resin and the redistribution layer when a substituent containing a nitrogen atom is included in the epoxy resin. This improved effect can be obtained.
  • the compound having an alicyclic epoxy structure as shown in the general formula (1) and containing a C6 ⁇ C30 aryl group as the epoxy resin it is possible to obtain the effect of improving the moisture absorption of the epoxy resin.
  • the moisture absorption is high and the reliability of the semiconductor after packaging is somewhat lowered.
  • the C6-C30 aryl group is included as a substituent in the alicyclic epoxy structure as in the present invention, the moisture absorption rate is lowered, thereby improving reliability.
  • the epoxy resin may include at least one or more of the compounds represented by Formulas 1a to 1d.
  • the epoxy resin comprising the compound represented by Formula 1 is about 0.1 to about 15% by weight of the epoxy resin composition for sealing semiconductor devices, for example about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 , 0.8, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 or 15% by weight, one or more of the above values and a range below one of the above values It may be included as. It may also be included in an amount of about 3 to about 15 weight percent, more specifically about 3 to about 12 weight percent.
  • curing agents generally used for sealing semiconductor devices may be used without limitation, and preferably, curing agents having two or more reactors may be used.
  • a phenol aralkyl type phenol resin such as acid anhydride, metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, and the like may be used, but are not limited thereto.
  • the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.
  • the phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following formula (2).
  • the phenol novolak-type phenolic resin represented by Chemical Formula 2 has a short crosslinking point spacing, and when reacted with an epoxy resin, the crosslinking density becomes high, thereby increasing the glass transition temperature of the cured product, thereby lowering the coefficient of linear expansion of the cured product. The warpage of the package can be more effectively suppressed.
  • the phenol aralkyl type phenol resin may be, for example, a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule represented by the following formula (3).
  • the phenol aralkyl type phenol resin represented by Chemical Formula 3 forms a carbon layer (char) by reacting with the epoxy resin to block the transfer of heat and oxygen in the surroundings to achieve flame retardancy.
  • Xylox type phenol resin may be, for example, "xylok” type phenol resin represented by the following formula (4).
  • the average value of f is 0 to 7.
  • the xylox phenol resin represented by the formula (4) is preferable in view of fluidity and reliability strengthening of the resin composition.
  • the polyfunctional phenol resin may be, for example, a polyfunctional phenol resin containing a repeating unit represented by the following formula (5).
  • the polyfunctional phenol resin containing the repeating unit represented by the formula (5) is preferable in view of enhancing the high temperature bending characteristics of the epoxy resin composition.
  • curing agents may be used alone or in combination.
  • addition agent which made the said hardening agent and other components such as an epoxy resin, a hardening accelerator, a mold release agent, a coupling agent, and a stress relaxation agent, pre-reacts, such as a melt master batch, can also be used as a compound.
  • the curing agent is about 0.1 to about 13% by weight of the epoxy resin composition for sealing the semiconductor device, for example about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3 , 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13% by weight, may be included in the range of one or more of the above values and one or less of the above values. It may also be included in an amount of about 0.1 to about 10% by weight, more specifically about 0.1 to about 8% by weight.
  • the blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package.
  • the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75.
  • the inorganic filler is for improving the mechanical properties and low stress of the epoxy resin composition.
  • general inorganic fillers used in semiconductor sealing materials can be used without limitation, and are not particularly limited.
  • fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
  • molten silica having a low coefficient of linear expansion is used to reduce stress.
  • Fused silica refers to amorphous silica having a specific gravity of about 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having a spherical molten silica having an average particle diameter of about 5 to about 30 ⁇ m, and an average particle diameter of about 0.001 to about 1 ⁇ m.
  • the molten silica mixture including about 50% by weight, is included from about 40% to about 100% by weight of the total filler.
  • the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler is about 70 to about 95 weight percent of the epoxy resin composition, for example about 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94 or 95% by weight, may be included in the range of one or more of the above values and one or less of the above values. It may also specifically comprise about 80 to about 90% by weight or about 83 to about 97% by weight.
  • the epoxy resin composition according to the present invention may further include one or more of a curing accelerator, a coupling agent, a mold releasing agent, and a coloring agent.
  • a hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening
  • a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example.
  • Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
  • organometallic compound examples include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
  • Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts.
  • the imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4.
  • boron compound examples include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like.
  • 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN)
  • 1, 8- diazabicyclo [5.4. 0] undec-7-ene 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU
  • phenol novolak resin salts and the like.
  • an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator.
  • the curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
  • the amount of the curing accelerator used in the present invention may be about 0.01 to about 2% by weight, specifically about 0.02 to about 1.5% by weight, and more specifically about 0.05 to about 1% by weight, based on the total weight of the epoxy resin composition. In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
  • the coupling agent is for improving the interfacial strength by reacting between the epoxy resin and the inorganic filler.
  • the coupling agent may be a silane coupling agent.
  • the said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler,
  • the kind is not specifically limited.
  • Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like.
  • the coupling agents may be used alone or in combination.
  • the coupling agent may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition. In the above range, the strength of the cured epoxy resin composition may be improved.
  • the release agent may be used at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt.
  • the release agent may be included in about 0.1 to about 1% by weight of the epoxy resin composition.
  • the colorant is for laser marking of the semiconductor device sealant, and colorants well known in the art may be used, and are not particularly limited.
  • the colorant may include one or more of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.
  • the colorant may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition.
  • the epoxy resin composition of the present invention may be selected from the group consisting of stress relieving agents such as modified silicone oil, silicone powder, and silicone resin within the scope of not impairing the object of the present invention; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate] methane; And the like may be further added as necessary.
  • the epoxy resin composition is uniformly sufficiently mixed with the above components at a predetermined mixing ratio using a Henschel mixer or Lodige mixer, and then roll-mill or kneader ( After kneading with a kneader), it can be prepared in the form of a solid powder through cooling and grinding.
  • the storage stability is higher than that of the liquid epoxy resin composition, so that storage and transporting are easy.
  • the content of the inorganic filler is higher than the liquid epoxy resin, it is excellent in durability and reliability.
  • the epoxy resin composition of the present invention uses an alicyclic epoxy resin having a low thermal expansion coefficient and a high glass transition temperature as the epoxy resin, warpage generation of the semiconductor package can be minimized.
  • This invention provides the sealing material containing the resin composition for semiconductor element sealing of this invention as mentioned above.
  • the sealing material of this invention only needs to contain the resin composition for semiconductor element sealing of above-mentioned this invention, and the kind in particular is not restrict
  • the encapsulant may be a variety of encapsulation materials commonly used in the art, such as granule encapsulation, tablet encapsulation, film encapsulation, or sheet. It may be a (sheet) -type encapsulant.
  • the film encapsulant means a film-type encapsulant that is flexible enough to be wound on a winding roll
  • the sheet encapsulant means an encapsulant that cannot be wound on a roll because it is relatively hard as compared to the film encapsulant. do.
  • the encapsulant of the present invention has less warpage than the encapsulant for semiconductor encapsulation, which can be used in the wafer level packaging process.
  • 1 and 2 illustrate embodiments of a semiconductor package according to the present invention.
  • the semiconductor packages 100 and 200 of the present invention may include the substrates 110 and 210, the semiconductor elements 120 and 220, the sealing layers 130 and 230, and the connection terminals 140. 240).
  • the substrates 110 and 210 support the semiconductor devices 120 and 220 and provide electrical signals to the semiconductor devices 120 and 220, and the semiconductor mounting substrates generally used in the art are not limited. Can be used.
  • the substrates 110 and 210 may be a circuit board, a lead frame substrate, or a substrate including a redistribution layer.
  • the circuit board may be made of an insulating material, for example, a flat plate to which a heat-curable film such as an epoxy resin or a polyimide is attached, or a heat-resistant organic film such as a liquid crystal polyester film or a polyamide film.
  • a circuit pattern is formed on the circuit board, and the circuit pattern includes a power line for supplying power, a ground line, a signal line for signal transmission, and the like.
  • Each of the wires may be separated from each other by an interlayer insulating layer.
  • the circuit board may be a printed circuit board (PCB) in which a circuit pattern is formed by a printing process.
  • PCB printed circuit board
  • the lead frame substrate may be made of a metal material such as nickel, iron, copper, nickel alloy, iron alloy, copper alloy, or the like.
  • the lead frame substrate may include a semiconductor chip mounting part for mounting a semiconductor chip and a connection terminal part electrically connected to an electrode part of the semiconductor chip.
  • the lead frame substrate is not limited thereto, and leads of various structures and materials known in the art may be used. Frame substrates can be used without limitation.
  • the substrate including the redistribution layer may include a redistribution layer (RDL) 113 at an outermost layer of the laminate in which the dielectric layer 111 and the metal layer 112 are alternately stacked.
  • RDL redistribution layer
  • the dielectric layer 111 may be made of, for example, photosensitive polyimide
  • the metal layer 112 may be made of, for example, copper.
  • dielectric layers and metal layers of various materials used in the art may be used without limitation.
  • the redistribution layer 113 may include, for example, a photoresist such as polybenzoazole, but is not limited thereto.
  • Various redistribution layer forming materials used in the art may be used without limitation.
  • the semiconductor devices 120 and 220 are mounted on the substrates 110 and 210.
  • the semiconductor device mounting method is not particularly limited, and semiconductor chip mounting techniques known in the art may be used without limitation.
  • the semiconductor device may be mounted on a substrate by a flip chip or a wire bonding method.
  • a bump is formed on a bottom surface of a semiconductor chip, and a semiconductor device is fused to a circuit board using the bump.
  • an additional connection structure such as a wire is not required, which is advantageous in miniaturization and light weight of the semiconductor package, and has a merit of high integration since the distance between electrodes can be reduced.
  • the wire bonding method is a method of electrically connecting an electrode portion of a semiconductor device and a substrate with a metal wire.
  • an adhesive member 250 such as a die bonding film, may be interposed between the semiconductor device 220 and the substrate 210.
  • the semiconductor device 220 is fixed on the substrate 210 by 250.
  • the semiconductor device may be formed of one semiconductor chip or may include a plurality of semiconductor chips.
  • the semiconductor device may be a stacked semiconductor device in which a plurality of semiconductor chips 222 are electrically stacked through a through silicon via (TSV) 224.
  • TSV through silicon via
  • the sealing layers 130 and 230 are for protecting the semiconductor devices 120 and 220 from the external environment, and include the epoxy resin composition according to the present invention. Since the epoxy resin composition has been described above, a detailed description thereof will be omitted.
  • the sealing layer is formed to encapsulate at least a portion of the semiconductor device on the substrate. 1 and 2, the sealing layer is illustrated as encapsulating the side surface of the semiconductor device, but is not limited thereto. That is, the sealing layer may be formed so as to seal both the side surface and the upper surface of the semiconductor device.
  • Connection terminals 140 and 240 for electrically connecting the substrates 110 and 210 and an external power source are formed on the lower surfaces of the substrates 110 and 210, that is, opposite surfaces on which the semiconductor devices are mounted.
  • the connection terminal may be any of various connection terminals well known in the art, for example, a lead, a ball grid array, and the like, without limitation.
  • the semiconductor package according to the present invention as shown in Figure 1, the substrate 110 including a redistribution layer (113), and on the redistribution layer 113 A semiconductor device 120 disposed, a sealing layer 130 formed on the redistribution layer 113 and encapsulating at least a portion of the semiconductor device 120, and a connection terminal formed under the substrate 110. 140 may be included.
  • the sealing layer comprises an epoxy resin composition according to the present invention.
  • the semiconductor package according to the present invention is mounted on the substrate 210, the adhesive member 250 on the substrate 210, a plurality of semiconductor chips ( 222 may include a semiconductor device 220 that is electrically stacked through a through silicon via (TSV) 224, and a connection terminal 240 formed under the substrate 210.
  • the sealing layer comprises an epoxy resin composition according to the present invention.
  • a single silicon chip was rearranged on top of a carrier wafer having an adhesive tape by using a pick-and-place process. The chips were rearranged and then pre-baked at 120 ° C. Then, after raising the temperature to 120 ⁇ 170 °C, the sealing material prepared in Examples and Comparative Examples was applied on a carrier wafer and then cooled to room temperature to form a sealing layer at the wafer level. After the sealing layer was formed, (7) about 70,000 points of the height and cross section of the wafer were measured using a laser technology WDM-300, and the average of the measured values was expressed as warpage at the wafer level.
  • the temperature of the carrier wafer was raised to 150-200 ° C. to separate the carrier wafer and the sealed semiconductor chip.
  • a spin coating of the polybenzoazole precursor solution was formed on the molded wafer to form a redistribution layer, and a semiconductor chip separated on the redistribution layer was disposed and then UV cured.
  • the individual semiconductor packages were manufactured by dicing. The warpage of the individual semiconductor packages manufactured as described above was measured using a profile according to JESD22-B112 using AKRO MATRIX of Shadow Moire (USA).
  • Test specimens were prepared using the epoxy resin compositions according to Examples and Comparative Examples. Test specimens were prepared by making a disk-type hardened specimen of 5 cm in diameter and 5 mm in depth using a 30 ton press molding machine and post-curing at 175 ° C. for 2 hours in a dry oven. After measuring the initial weight of the prepared test specimen to 0.001g unit, the test specimen was placed in a chamber of a pressure cooking tester (PCT) (EHS-211MD, EPEC Co., Ltd.) at 120 ° C, 2 atmospheres, and a relative humidity of 100%. After 24 hours of exposure at, the weight was measured to 0.001g units after exposure to calculate the absorption. The mean value is shown after three measurements.
  • PCT pressure cooking tester
  • Substrate with an RDL layer formed by performing a plasma treatment on a Ni metal plate having a width ⁇ length ⁇ depth of 35 ⁇ 35 ⁇ 2 mm, followed by spin coating a PBO-based liquid type RDL to a thickness of 15 to 20 ⁇ m and curing at 200 ° C. was prepared.
  • the epoxy resin compositions of Examples and Comparative Examples were molded on the substrate under conditions of a mold temperature of 175 ° C., a transfer pressure of 9 MPa, a feed rate of 1 mm / sec, and a curing time of 90 seconds, a cured specimen was obtained, and then the cured specimen was ovened at 175 ° C. And post-cured (PMC) for 4 hours.
  • PMC post-cured
  • C-SAM C-SAM
  • Scanning Acoustic Microscope Sonix Co., Ltd., a device for determining the presence or absence of peeling by sound waves, was measured for tensile strength (kgf).
  • the area of the epoxy resin composition in contact with the substrate is 1 ⁇ 1cm and the tensile force measurement was carried out using a universal testing machine (UTM) for three specimens for each measurement process and the average value was calculated.
  • UPM universal testing machine
  • connection terminal 140, 240 connection terminal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)

Abstract

La présente invention concerne : une composition de résine permettant de sceller un dispositif à semi-conducteurs à l'état solide, comprenant une résine époxy contenant un composé représenté par la formule chimique 1, un agent de durcissement et une charge inorganique ; un matériau d'encapsulation comprenant celle-ci; et un boîtier à semi-conducteur. La composition de résine destinée à sceller un dispositif à semi-conducteur présente un faible coefficient de dilatation thermique et une température de transition vitreuse élevée, ce qui permet de réduire au maximum le gauchissement.
PCT/KR2017/003325 2016-06-23 2017-03-28 Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur WO2017222151A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201780038924.2A CN109328204B (zh) 2016-06-23 2017-03-28 用于密封固态半导体器件的环氧树脂组合物、包含其的封装材料及半导体封装件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0078905 2016-06-23
KR1020160078905A KR101922296B1 (ko) 2016-06-23 2016-06-23 고체상 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 포함하는 봉지재 및 반도체 패키지

Publications (1)

Publication Number Publication Date
WO2017222151A1 true WO2017222151A1 (fr) 2017-12-28

Family

ID=60783420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/003325 WO2017222151A1 (fr) 2016-06-23 2017-03-28 Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur

Country Status (3)

Country Link
KR (1) KR101922296B1 (fr)
CN (1) CN109328204B (fr)
WO (1) WO2017222151A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102659602B1 (ko) 2019-03-12 2024-04-23 동우 화인켐 주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자
KR20210038011A (ko) 2019-09-30 2021-04-07 동우 화인켐 주식회사 에폭시 수지 조성물 및 이를 포함하는 반도체 소자용 밀봉재
KR20210078941A (ko) 2019-12-19 2021-06-29 동우 화인켐 주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자
KR20210078942A (ko) 2019-12-19 2021-06-29 동우 화인켐 주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050076660A (ko) * 2004-01-21 2005-07-26 닛토덴코 가부시키가이샤 반도체 밀봉용 수지 조성물
JP2012214608A (ja) * 2011-03-31 2012-11-08 Nippon Zeon Co Ltd 硬化性樹脂組成物、フィルム、積層体、及び硬化物
WO2012165239A1 (fr) * 2011-06-01 2012-12-06 住友ベークライト株式会社 Composition de résine liquide et dispositif à semi-conducteurs l'utilisant
WO2015111525A1 (fr) * 2014-01-23 2015-07-30 株式会社ダイセル Composition pour scellement
WO2015129670A1 (fr) * 2014-02-27 2015-09-03 積水化学工業株式会社 Composition de résine durcissable pour sceller un élément d'affichage électroluminescent organique, feuille de résine durcissable pour sceller un élément d'affichage électroluminescent organique, et élément d'affichage électroluminescent organique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050076660A (ko) * 2004-01-21 2005-07-26 닛토덴코 가부시키가이샤 반도체 밀봉용 수지 조성물
JP2012214608A (ja) * 2011-03-31 2012-11-08 Nippon Zeon Co Ltd 硬化性樹脂組成物、フィルム、積層体、及び硬化物
WO2012165239A1 (fr) * 2011-06-01 2012-12-06 住友ベークライト株式会社 Composition de résine liquide et dispositif à semi-conducteurs l'utilisant
WO2015111525A1 (fr) * 2014-01-23 2015-07-30 株式会社ダイセル Composition pour scellement
WO2015129670A1 (fr) * 2014-02-27 2015-09-03 積水化学工業株式会社 Composition de résine durcissable pour sceller un élément d'affichage électroluminescent organique, feuille de résine durcissable pour sceller un élément d'affichage électroluminescent organique, et élément d'affichage électroluminescent organique

Also Published As

Publication number Publication date
CN109328204B (zh) 2023-12-29
KR20180000630A (ko) 2018-01-03
KR101922296B1 (ko) 2018-11-26
CN109328204A (zh) 2019-02-12

Similar Documents

Publication Publication Date Title
WO2017222151A1 (fr) Composition de résine époxy pour sceller un dispositif à semi-conducteurs à l'état solide, matériau d'encapsulation la comprenant et boîtier à semi-conducteur
WO2016175385A1 (fr) Composition de résine époxy pour étancher un dispositif semi-conducteur, et dispositif semi-conducteur étanché au moyen de celle-ci
WO2011090364A2 (fr) Composition durcissable
WO2011090361A2 (fr) Composition durcissable
WO2011090362A2 (fr) Résine de silicone
WO2011081325A2 (fr) Résine transmettant de la lumière pour un matériau d'encapsulation et dispositif électronique la comprenant
WO2016167449A1 (fr) Composé à base de phosphonium, composition de résine époxyde le contenant, et dispositif à semi-conducteur fabriqué à l'aide de celui-ci
WO2024151049A1 (fr) Composition de résine pour encapsuler un dispositif électronique, et dispositif électronique fabriqué à l'aide de celle-ci
WO2014017885A1 (fr) Composition durcissable
WO2012173460A2 (fr) Composition durcissable
WO2017142251A1 (fr) Composition de résine époxy pour la fermeture hermétique d'un dispositif semi-conducteur et dispositif semi-conducteur fermé hermétiquement au moyen de celle-ci
WO2012091306A2 (fr) Composition adhésive pour semi-conducteurs, et pellicule adhésive l'utilisant
WO2018117373A1 (fr) Élément d'étanchéité de semiconducteur de type film, boîtier de semiconducteur fabriqué à l'aide de celui-ci, et son procédé de fabrication
WO2011081326A2 (fr) Résine transmettant de la lumière pour un matériau d'encapsulation et dispositif électronique la comprenant
WO2016085115A1 (fr) Composé à base de phosphonium, composition de résine époxy le contenant et dispositif à semi-conducteur fabriqué à l'aide de celui-ci
WO2014104609A1 (fr) Monomère de siloxane, composition de matériau d'étanchéité, matériau d'étanchéité, et dispositif électronique
WO2013094998A1 (fr) Composition adhésive pour semi-conducteur, et film adhésif la contenant
WO2017057844A1 (fr) Boîtier de semi-conducteur et son procédé de fabrication
WO2014017889A1 (fr) Composition de durcissement
WO2018117374A1 (fr) Élément d'étanchéité semiconducteur de type film, boîtier de semiconducteur fabriqué à l'aide de celui-ci, et son procédé de fabrication
WO2013094930A1 (fr) Film adhésif pour la découpe de puces semi-conductrices non-ultraviolet
WO2017099356A1 (fr) Procédé de préparation de résine époxyde, résine époxyde, composition de résine époxyde pour l'encapsulation d'un dispositif semi-conducteur contenant cette dernière, et produit moulé à l'aide de cette dernière
WO2019132175A1 (fr) Composition de résine époxy pour encapsulation d'un dispositif à semi-conducteurs et dispositif à semi-conducteurs encapsulé l'utilisant
KR20190081986A (ko) 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
WO2014017886A1 (fr) Composition durcissante

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17815565

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17815565

Country of ref document: EP

Kind code of ref document: A1