WO2017131390A1 - Composition de résine époxyde pour rendre étanche un dispositif à semi-conducteurs et dispositif rendu étanche au moyen de celle-ci - Google Patents

Composition de résine époxyde pour rendre étanche un dispositif à semi-conducteurs et dispositif rendu étanche au moyen de celle-ci Download PDF

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WO2017131390A1
WO2017131390A1 PCT/KR2017/000669 KR2017000669W WO2017131390A1 WO 2017131390 A1 WO2017131390 A1 WO 2017131390A1 KR 2017000669 W KR2017000669 W KR 2017000669W WO 2017131390 A1 WO2017131390 A1 WO 2017131390A1
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epoxy resin
resin composition
formula
semiconductor device
group
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PCT/KR2017/000669
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English (en)
Korean (ko)
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조지윤
배경철
윤지아
이영준
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삼성에스디아이 주식회사
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Priority to CN201780007822.4A priority Critical patent/CN108602984B/zh
Publication of WO2017131390A1 publication Critical patent/WO2017131390A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3477—Six-membered rings
    • C08K5/3492—Triazines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads

Definitions

  • the present invention relates to an epoxy resin composition for semiconductor device sealing and a semiconductor device sealed using the same. More specifically, the present invention relates to an epoxy resin composition for sealing a semiconductor device having excellent crack resistance and excellent adhesion to lead frames of various materials, and a semiconductor device sealed using the same.
  • solder among the components applied to semiconductor devices, lead-free solder is almost used abroad, and tin-lead (Sn-Pb) plating applied to lead frames is gradually becoming lead-free.
  • the lead-free methods currently being developed to replace traditional tin-lead plating include pure Sn plating and nickel-palladium pre-plating.
  • Nickel-palladium-silver (Ni-Pd-Ag) or nickel-palladium-silver / gold (Ni-Pd-Ag / Au) preplating (PPF) is an alternative to overcome this problem. Is being presented. In particular, research is being actively conducted to replace copper lead frames with PPF lead frames, mainly in Europe.
  • the reliability after welding tends to depend largely on the adhesion at the interface between the cured product of the epoxy resin composition and the semiconductor element or lead frame inside the semiconductor device. Therefore, when the interface adhesion decreases, there is a problem that peeling occurs and cracking occurs in the semiconductor device by this peeling.
  • a method of improving the interfacial adhesion between the semiconductor element and the sealing material by adding an amine coupling agent or the like to the epoxy resin composition has been used. However, such a method alone cannot secure sufficient adhesion with the PPF lead frame.
  • An object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that is excellent in adhesion to a lead frame of a semiconductor element, particularly a PPF lead frame.
  • Another object of the present invention is to provide a semiconductor device excellent in crack resistance at the time of mounting a substrate by using the epoxy resin composition for sealing a semiconductor device as described above.
  • the present invention provides an epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, an inorganic filler and a triazine compound represented by the following formula (8).
  • X and Y are each independently a substituted or unsubstituted C1-20 alkyl group or a substituted or unsubstituted C6-20 aryl group
  • E is NH, O or S
  • the R 16 , R 17 , R 18 , R 19 and R 20 are each independently hydrogen, hydroxyl group, amine group or thiol group
  • n 1 , n 2 , n 3 , n 4 and n 5 are each independently an integer of 0 to 5.
  • R 16 , R 17 , R 18 , R 19, and R 20 may be a hydroxyl group, an amine group, or a thiol group, and specifically, R 17 is It may be a hydroxyl group, an amine group or a thiol group.
  • At least one or more of X and Y may be represented by Formula 9 below.
  • the triazine compound may be a compound represented by the following formula (10).
  • R 16 , R 17 , R 18 , R 19, R 20 , n 1 , n 2 , n 3 , n 4 and n 5 are the same as in the general formula (8).
  • the triazine compound represented by Formula 8 may be included in about 0.01 to about 0.5% by weight of the epoxy resin composition.
  • the epoxy resin composition is about 0.1 to about 17% by weight of the epoxy resin, about 0.1 to about 13% by weight of the curing agent, about 70 to about 95% by weight of the inorganic filler and the triazine compound represented by Formula 8 About 0.01 to about 0.5% by weight.
  • the epoxy resin composition may further include one or more of a curing accelerator, a coupling agent, a release agent and a colorant.
  • the present invention provides a semiconductor device sealed by the epoxy resin composition according to the present invention.
  • the semiconductor device may include a lead frame pre-plated with a material containing nickel and palladium.
  • the epoxy resin composition according to the present invention is excellent in adhesion to a lead frame of a semiconductor device, in particular a PPF lead frame.
  • the semiconductor element sealed by the epoxy resin composition which concerns on this invention shows the outstanding crack resistance when mounting a board
  • FIG. 1 is a view showing the adhesion test specimen of the present invention.
  • (A) is a top view of the specimen, and
  • (B) is a sectional view.
  • X-Y which shows a range means "X or more and Y or less.”
  • substituted in “substituted or unsubstituted” means that at least one hydrogen atom of the functional group is hydroxyl, halogen, amino, amine, nitro, cyano, oxo, thiol, C1-C20 Alkyl group, C1 ⁇ C20 haloalkyl group, C6 ⁇ C30 aryl group, C3 ⁇ C30 heteroaryl group, C3 ⁇ C10 cycloalkyl group, C3 ⁇ C10 heterocycloalkyl group, C7 ⁇ C30 arylalkyl group, C1 ⁇ C30
  • halo refers to fluorine, chlorine, iodine or bromine.
  • the epoxy resin composition for semiconductor element sealing of this invention contains an epoxy resin, a hardening
  • epoxy resins generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, an epoxy compound containing two or more epoxy groups in the molecule can be used.
  • epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, polyfunctional type epoxy resins, naphthol novolak type epoxys, etc.
  • Resins novolac epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, and the like.
  • the epoxy resin may include at least one of a cresol novolac epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin and a biphenyl type epoxy resin.
  • the multifunctional epoxy resin may be, for example, an epoxy resin represented by the following Chemical Formula 1.
  • R1, R2, R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 10 carbon atoms
  • R6 and R7 are each independently a hydrogen atom, a methyl group, or an ethyl group
  • a is 0 to 6 Is an integer.
  • R1, R2, R3, R4 and R5 are each independently hydrogen, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group or hexyl group
  • R6 and R7 may be hydrogen, but are not necessarily limited thereto.
  • the polyfunctional epoxy resin of the above [Formula 1] can reduce the deformation of the package, and has excellent advantages in fast curing, latentness and preservation, as well as excellent cured strength and adhesiveness.
  • the multifunctional epoxy resin composition may be a triphenol alkane type epoxy resin such as a triphenol methane type epoxy resin, a triphenol propane type epoxy resin, or the like.
  • the phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following Chemical Formula 2.
  • the phenol aralkyl type epoxy resin of [Formula 2] forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidative resistance and crack resistance, and has a low crosslinking density to burn at high temperatures. While forming a carbon layer (char) has the advantage that it can secure a certain level of flame resistance in itself.
  • the biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by Formula 3 below.
  • R8, R9, R10, R11, R12, R13, R14 and R15 are each independently an alkyl group having 1 to 4 carbon atoms, the average value of c is 0 to 7.
  • the biphenyl type epoxy resin of [Formula 3] has the advantage that the flowability and reliability of the resin composition is enhanced.
  • epoxy resins may be used alone or in combination.
  • the epoxy resin may also be used in the form of a compound in which the epoxy resin is subjected to a linear reaction such as a melt master batch with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
  • the epoxy resin may be a low chlorine ion (ion), sodium ions (sodium ion), and other ionic impurities contained in the epoxy resin.
  • the epoxy resin is about 0.1% to about 17% by weight of the epoxy resin composition for sealing a semiconductor device, specifically about 3% to about 15% by weight, more specifically about 3% to about 12% by weight It may be included in the content of.
  • the content of the epoxy resin satisfies the above range, it is possible to better implement the adhesive strength and strength of the epoxy resin composition after curing.
  • curing agents generally used for sealing semiconductor devices may be used without limitation, and specifically, curing agents having two or more reactors may be used.
  • a phenol aralkyl type phenol resin such as acid anhydride, metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, and the like may be used, but are not limited thereto.
  • the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.
  • the phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following [Formula 4].
  • the phenol novolak type phenolic resin represented by Chemical Formula 4 has a short crosslinking point spacing, and when reacted with an epoxy resin, the crosslinking density becomes high, thereby increasing the glass transition temperature of the cured product. The curvature of a package can be suppressed.
  • the phenol aralkyl type phenol resin may be, for example, a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule represented by the following [Formula 5].
  • the phenol aralkyl type phenol resin represented by Chemical Formula 5 forms a carbon layer (char) by reacting with an epoxy resin to achieve flame retardancy by blocking transfer of heat and oxygen around.
  • xylox type phenol resin may be, for example, a “xylok” type phenol resin represented by the following [Formula 6].
  • Xylox phenolic resin represented by the formula (6) has the advantage that the flowability and reliability of the resin composition is enhanced.
  • the polyfunctional phenolic resin may be, for example, a polyfunctional phenolic resin containing a repeating unit represented by the following [Formula 7].
  • the multifunctional phenolic resin including the repeating unit represented by the formula (7) has an advantage of excellent high temperature warpage characteristics of the epoxy resin composition.
  • These curing agents may be used alone or in combination.
  • the addition agent which made the said hardening agent and other components such as an epoxy resin, a hardening accelerator, a mold release agent, a coupling agent, and a stress relaxation agent, pre-reacts, such as a melt master batch, can also be used as a compound.
  • the curing agent may be included in an amount of about 0.1 to about 13% by weight, specifically about 0.1 to about 10% by weight, and more specifically about 0.1 to about 8% by weight of the epoxy resin composition for sealing a semiconductor device.
  • the content of the curing agent satisfies the above range, the curing degree of the epoxy resin composition and the strength of the cured product are excellent.
  • the blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package.
  • the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75.
  • the inorganic filler is for improving the mechanical properties and low stress of the epoxy resin composition.
  • general inorganic fillers used in semiconductor sealing materials can be used without limitation, and are not particularly limited.
  • fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
  • molten silica having a low coefficient of linear expansion is used to reduce stress.
  • Fused silica refers to amorphous silica having a specific gravity of about 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having an average particle diameter of about 5 to about 30 ⁇ m, and about spherical molten silica having an average particle diameter of about 0.001 to about 1 ⁇ m.
  • the molten silica mixture including about 50% by weight, comprises from about 40% to about 100% by weight of the total filler.
  • the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler may be included in about 70% to about 95% by weight, for example about 80% to about 90% or about 83% to about 97% by weight of the epoxy resin composition. Within this range, flame retardancy, fluidity and reliability of the epoxy resin composition can be ensured.
  • the triazine compound is for improving adhesion to a lead frame plated with silver or gold or a lead frame pre-plated with a material including nickel and palladium, and may be a compound represented by the following Formula 8.
  • X and Y are each independently a substituted or unsubstituted C1-20 alkyl group or a substituted or unsubstituted C6-20 aryl group
  • E is NH, O or S
  • R 16 , R 17 , R 18 , R 19 and R 20 are each independently a hydrogen, a hydroxyl group, an amine group or a thiol group
  • n 1 , n 2 , n 3 , n 4 and n 5 are each independently an integer of 0 to 5.
  • R 16 , R 17 , R 18 , R 19, and R 20 may be a hydroxyl group, an amine group, or a thiol group.
  • R 17 is It may be a hydroxyl group, an amine group or a thiol group.
  • the effect of improving adhesion is particularly excellent.
  • At least one or more of the X and Y may be a functional group represented by the following formula (9).
  • the triazine compound may be a compound represented by the following formula (10).
  • R 16 , R 17 , R 18 , R 19, R 20 , n 1 , n 2 , n 3 , n 4 and n 5 are the same as in the general formula (8).
  • the triazine compound as described above contains a large amount of N having a high electronegativity, thereby improving adhesion to metal.
  • the triazine compound represented by [Formula 8] is about 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.40, 0.45 in the epoxy resin composition. Or 0.50% by weight.
  • the triazine compound represented by the above [Formula 8] may be included in one or more of the above numerical values and about one or less of the above numerical values in the epoxy resin composition.
  • the triazine compound represented by [Formula 8] may be included in about 0.01 wt% to about 0.5 wt%, specifically about 0.01 wt% to about 0.3 wt% of the epoxy resin composition. In the above range, the effect of improving adhesion to the lead frame is remarkable.
  • the epoxy resin composition according to the present invention may further include one or more of a curing accelerator, a coupling agent, a mold releasing agent, and a coloring agent.
  • a hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening
  • a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example.
  • Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
  • organometallic compound examples include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
  • Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts.
  • the imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4.
  • boron compound examples include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like.
  • 1,5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN)
  • 1, 8- diazabicyclo [5.4. 0] undec-7-ene 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU
  • phenol novolak resin salts and the like.
  • an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator.
  • the curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
  • the amount of the curing accelerator used in the present invention may be about 0.01% to about 2% by weight based on the total weight of the epoxy resin composition, specifically about 0.02% to about 1.5% by weight, more specifically about 0.05% by weight to about It may be about 1% by weight. In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
  • the coupling agent is for improving the interfacial strength by reacting between the epoxy resin and the inorganic filler.
  • the coupling agent may be a silane coupling agent.
  • the said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler,
  • the kind is not specifically limited.
  • Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like.
  • the coupling agents may be used alone or in combination.
  • the coupling agent is about 0.01% to about 5% by weight, specifically about 0.05% to about 3% by weight, more specifically about 0.1% to about 2% by weight based on the total weight of the epoxy resin composition. It may be included in the content of. In the above range, the strength of the cured epoxy resin composition is improved.
  • the release agent may be used at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt.
  • the release agent may be included in about 0.1 to about 1% by weight of the epoxy resin composition.
  • the colorant is for laser marking of the semiconductor device sealant, and colorants well known in the art may be used, and are not particularly limited.
  • the colorant may include one or more of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.
  • the colorant is about 0.01% to about 5% by weight, specifically about 0.05% to about 3% by weight, more specifically about 0.1% to about 2% by weight based on the total weight of the epoxy resin composition. It may be included in the content.
  • the epoxy resin composition of the present invention may be selected from the group consisting of stress relieving agents such as modified silicone oil, silicone powder, and silicone resin within the scope of not impairing the object of the present invention; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate] methane; And the like may be further added as necessary.
  • a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or Lodige mixer, and then roll-mill After kneading with a kneader or a kneader, cooling and grinding are used to obtain a final powder product.
  • a low pressure transfer molding method can be generally used as a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention.
  • the present invention is not limited thereto, and molding may also be performed by an injection molding method or a casting method.
  • the epoxy resin composition is preplated with a copper lead frame (e.g., silver plated copper lead frame), a nickel alloy lead frame, and a material containing nickel and palladium in the lead frame by the above method.
  • a semiconductor device in which a semiconductor device is sealed may be manufactured by attaching a lead frame, a PCB, or the like plated with one or more of Ag) and gold (Au).
  • Inorganic filler A 9: 1 (weight ratio) mixture of spherical molten silica having an average particle diameter of 20 ⁇ m and spherical molten silica having an average particle diameter of 0.5 ⁇ m was used.
  • Example Comparative example One 2 3 4 5
  • One 2 (A) (a1) 5.32 4.89 5.21 4.95 5.06 5.47 5.13 (a2) 2.38 2.53 2.13 2.37 2.48 2.33 2.35 (B) (b1) 2.29 2.35 2.11 2.24 2.19 2.26 2.17 (b2) 1.47 1.61 2.01 1.91 1.65 1.71 1.82 (C) 0.29 0.27 0.29 0.28 0.27 0.28 0.28 (D) 87.0 87.0 87.0 87.0 87.0 87.0 87.0 87.0 (E) (e1) 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 (e2) 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.24 (e3) 0.03 0.03 0.03 0.03 0.03 0.03 0.03 (F) (f1) 0.3 - - - - - - (f2) - 0.4 - - - - - - (f3) - - - - - - (f4) - - - - 0.3 - - -
  • Flowability (inch) Flow length was measured using a transfer molding press at 175 ° C. and 70 kgf / cm 2 using an evaluation mold according to EMMI-1-66. The higher the measured value, the better the fluidity.
  • TMA Glass transition temperature
  • Adhesion force (kgf): The lead frame of the material shown in Table 2 below was prepared in a standard suitable for the mold for measuring adhesion force, and the epoxy resin composition of Table 1 was placed on the lead frame with a mold temperature of 170 to 180 ° C and a clamp pressure of 70 kgf /. m2, a feed pressure of 1000 psi, a feed rate of 0.5 ⁇ 1cm / s, a curing time of 120 seconds to form a specimen as shown in Figure 1 was prepared. At this time, the contact area of the lead frame and the epoxy resin composition was 40 ⁇ 1 mm 2 .
  • the prepared test specimen was placed in an oven at 170-180 ° C. for 4 hours, after which the adhesive force (adhesive force I) and the post-cured specimen were left at 60 ° C. and 60% relative humidity for 120 hours, and then at 260 ° C.
  • the semiconductor device including a lead frame pre-plated with nickel-palladium-gold was sealed with the epoxy resin composition of Table 1 to prepare a semiconductor package.
  • the prepared semiconductor package was put in an oven at 175 ° C. and then cured for 2 hours. Then, the semiconductor package was dried at 125 ° C. for 24 hours, left at 60 ° C., 60% relative humidity for 120 hours, and then repeated once with IR reflow for 30 seconds at 260 ° C. Then, by using a non-destructive scanner C-SAM (Scanning Acoustical Microscopy) and an optical microscope, the number of cracked packages out of 200 packages were evaluated.
  • C-SAM Sccanning Acoustical Microscopy
  • the epoxy resin composition for sealing semiconductor devices of Examples 1 to 5 including the triazine compound of Formula 8 has excellent adhesion to lead frames of various materials, fluidity, reliability (crack resistance) And hardening degree were also excellent.
  • Comparative Example 1 which does not include a triazine compound
  • Comparative Example 2 which used a triazine compound having an epoxy group end, compared with the compositions of Examples 1 to 5, and showed higher adhesion and resistance to Ag plating and PPF lead frames. It can be seen that the crackability is poor.

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Abstract

La présente invention concerne une composition de résine époxyde permettant de rendre étanche un dispositif à semi-conducteurs, et un dispositif à semi-conducteurs rendu étanche à l'aide de celle-ci, la composition de résine époxyde contenant une résine époxyde, un agent de durcissement, une charge inorganique, et un composé triazine représenté par la formule chimique 8.
PCT/KR2017/000669 2016-01-29 2017-01-19 Composition de résine époxyde pour rendre étanche un dispositif à semi-conducteurs et dispositif rendu étanche au moyen de celle-ci WO2017131390A1 (fr)

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CN201780007822.4A CN108602984B (zh) 2016-01-29 2017-01-19 用于密封半导体器件的环氧树脂组合物及通过使用其密封的半导体器件

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KR10-2016-0012005 2016-01-29
KR1020160012005A KR101943698B1 (ko) 2016-01-29 2016-01-29 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자

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WO2017131390A1 true WO2017131390A1 (fr) 2017-08-03

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JP2000038439A (ja) * 1998-07-23 2000-02-08 Dainippon Ink & Chem Inc エポキシ樹脂組成物
WO2001060913A1 (fr) * 2000-02-15 2001-08-23 Resolution Research Nederland B.V. Composition de resine thermodurcissable
JP2005132890A (ja) * 2003-10-28 2005-05-26 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2007204679A (ja) * 2006-02-03 2007-08-16 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびその製法ならびにそれを用いて得られる半導体装置
KR100797967B1 (ko) * 2006-12-31 2008-01-24 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한반도체 소자

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JP2007224242A (ja) * 2006-02-27 2007-09-06 Tamura Kaken Co Ltd 熱硬化性樹脂組成物、ｂステージ化した樹脂フィルムおよび多層ビルドアップ基板
KR20140127039A (ko) * 2013-04-24 2014-11-03 삼성전기주식회사 저열팽창율 및 고내열성을 갖는 인쇄회로기판용 절연수지 조성물, 이를 이용한 프리프레그, 동박적층판, 및 인쇄회로기판

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000038439A (ja) * 1998-07-23 2000-02-08 Dainippon Ink & Chem Inc エポキシ樹脂組成物
WO2001060913A1 (fr) * 2000-02-15 2001-08-23 Resolution Research Nederland B.V. Composition de resine thermodurcissable
JP2005132890A (ja) * 2003-10-28 2005-05-26 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2007204679A (ja) * 2006-02-03 2007-08-16 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびその製法ならびにそれを用いて得られる半導体装置
KR100797967B1 (ko) * 2006-12-31 2008-01-24 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한반도체 소자

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