WO2017045222A1 - 一种触摸面板、阵列基板及其制造方法 - Google Patents

一种触摸面板、阵列基板及其制造方法 Download PDF

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Publication number
WO2017045222A1
WO2017045222A1 PCT/CN2015/090673 CN2015090673W WO2017045222A1 WO 2017045222 A1 WO2017045222 A1 WO 2017045222A1 CN 2015090673 W CN2015090673 W CN 2015090673W WO 2017045222 A1 WO2017045222 A1 WO 2017045222A1
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WIPO (PCT)
Prior art keywords
touch
layer
electrode layer
pixel electrode
insulating layer
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Ceased
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PCT/CN2015/090673
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English (en)
French (fr)
Inventor
李文英
郝思坤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/786,307 priority Critical patent/US10288952B2/en
Publication of WO2017045222A1 publication Critical patent/WO2017045222A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present invention relates to the field of touch technologies, and in particular, to a touch panel, an array substrate, and a method of fabricating the same.
  • the liquid crystal display has the advantages of low power consumption, low flickering, vivid color and the like, and is widely used in electronic products such as mobile phones, cameras, computer screens, televisions, etc., and is currently the mainstream display.
  • the touch screen has the advantages of sturdy and durable, fast response, space saving, and easy communication.
  • the touch technology the user only needs to touch the graphic symbols or characters on the touch screen with a finger to realize the operation of the host, thereby enabling human-computer interaction. It is more straightforward and greatly facilitates users who are not familiar with computer operations.
  • the screens of many electronic devices combine liquid crystal display technology and touch technology, which not only has the advantages of liquid crystal display, but also realizes touch operation, and is popular among consumers.
  • the touch electrode for implementing the touch function is usually located under the pixel electrode of the liquid crystal display panel, which is easy to cause the touch electrode. It is difficult to sense the user's touch operation and reduce the sensitivity of the touch.
  • the technical problem to be solved by the present invention is to provide a touch panel, an array substrate, and a method of manufacturing the same, which can improve the sensitivity of touch.
  • a technical solution adopted by the present invention is to provide an array substrate applied to a touch panel, comprising a plurality of mutually insulated touch electrode lines, mutually insulated pixel electrode layers and touch electrode layers,
  • the touch electrode layer is located on a side of the pixel electrode layer facing the touch operation space; wherein the touch electrode layer comprises a plurality of self-capacitance touch electrodes insulated from each other, and each of the self-capacitive touches
  • the electrode is connected to a corresponding one of the touch electrode lines, and the touch electrode line is not in the same layer as the source/drain metal layer of the thin film transistor that drives the pixel electrode layer; the touch electrode layer simultaneously serves as the array The common electrode layer of the substrate.
  • the touch electrode line is disposed in a different layer from the corresponding self-capacitance touch electrode.
  • the first insulating layer is sequentially formed on the side of the pixel electrode layer facing the touch operation space.
  • a second insulating layer the touch electrode layer is formed on a side of the second insulating layer facing the touch operation space; the touch electrode line is formed on a side of the first insulating layer facing the touch operation space
  • a plurality of first via holes are disposed on the second insulating layer, and at least a portion of the touch electrode lines are respectively connected to the corresponding self-capacitive touch electrodes through the first via holes.
  • the method further includes sequentially forming a third insulating layer, a source/drain metal layer, a fourth insulating layer, a gate, a gate insulating layer, and an active layer on a side of the pixel electrode layer facing away from the touch operation space.
  • a second via hole is disposed on the third insulating layer, and the pixel electrode layer is connected to the source/drain metal layer through the second via hole.
  • a touch panel including an array substrate, the array substrate includes a pixel electrode layer and a touch electrode layer insulated from each other, and the touch electrode layer is located.
  • the pixel electrode layer faces the touch operation space side.
  • the touch electrode layer includes a plurality of mutually insulated self-capacitive touch electrodes, each of the self-capacitive touch electrodes and a corresponding one of the touch electrodes.
  • the control electrode line is connected, and the touch electrode line is not in the same layer as the source/drain metal layer of the thin film transistor that drives the pixel electrode layer.
  • the touch electrode line is disposed in a different layer from the corresponding self-capacitance touch electrode.
  • a first insulating layer and a second insulating layer are formed on the side of the pixel electrode layer facing the touch operation space, and the touch electrode layer is formed on a side of the second insulating layer facing the touch operation space.
  • the touch electrode line is formed on a side of the first insulating layer facing the touch operation space, and the second insulating layer is provided with a plurality of first via holes, at least part of the touch electrode lines respectively The first via hole is connected to the corresponding self-capacitive touch electrode.
  • the touch electrode layer serves as a common electrode layer of the array substrate at the same time.
  • the method further includes sequentially forming a third insulating layer, a source/drain metal layer, a fourth insulating layer, a gate, a gate insulating layer, and an active layer on a side of the pixel electrode layer facing away from the touch operation space.
  • a second via hole is disposed on the third insulating layer, and the pixel electrode layer is connected to the source/drain metal layer through the second via hole.
  • another technical solution adopted by the present invention is to provide a method for fabricating an array substrate, comprising: providing a substrate; forming a pixel electrode layer on the substrate; forming on the pixel electrode layer
  • the touch electrode layer is disposed such that the touch electrode layer is located on a side of the pixel electrode layer facing the touch operation space, and the pixel electrode layer and the touch electrode layer are insulated from each other.
  • the method includes: Forming a plurality of mutually insulated touch electrode lines on the element electrode layer, the plurality of touch electrode lines are insulated from the pixel electrode layer, and the plurality of touch electrode lines and the thin film transistor driving the pixel electrode layer
  • the source and drain metal layers are not in the same layer
  • the step of forming the touch electrode layer on the pixel electrode layer includes: forming a plurality of mutually insulated self-capacitive touch electrodes on the pixel electrode layer, and each The self-capacitive touch electrodes are connected to a corresponding one of the touch electrode lines.
  • the touch electrode line is disposed in a different layer from the corresponding self-capacitive touch electrode; before the step of forming a plurality of mutually insulated touch electrode lines on the pixel electrode layer, the method includes: Forming a first insulating layer on the electrode layer such that the first insulating layer is located on a side of the pixel electrode layer facing the touch operation space; and a plurality of mutually insulated touch electrode lines are formed on the pixel electrode layer
  • the method includes: forming a plurality of mutually insulated touch electrode lines on the first insulating layer; forming a second insulating layer on the touch electrode lines, such that the second insulating layer is located in the pixel electrode layer a plurality of first via holes are formed on the second insulating layer; and the step of forming a plurality of mutually insulated self-capacitive touch electrodes on the pixel electrode layer includes And forming a plurality of mutually insulated self-capacitive touch electrodes on the second insulating layer, and connecting at least a
  • the touch electrode layer is disposed on the side of the pixel electrode layer facing the touch operation space, thereby making the touch electrode The layer is closer to the touch operation space, which facilitates the touch sensing operation of the touch electrode layer and can improve the sensitivity of the touch.
  • FIG. 1 is a cross-sectional view showing an embodiment of an array substrate applied to a touch panel of the present invention
  • FIG. 2 is a plan view showing an embodiment of an array substrate applied to a touch panel of the present invention
  • FIG. 3 is a schematic structural view of an embodiment of a touch panel of the present invention.
  • FIG. 4 is a flow chart showing an embodiment of a method for fabricating an array substrate of the present invention.
  • FIG. 5 is a flow chart before the touch electrode layer is formed on the pixel electrode layer in the first embodiment of the method for fabricating the array substrate of the present invention.
  • the present invention is applied to an array substrate of a touch panel.
  • the array substrate includes a pixel electrode layer 11 and a touch electrode layer 12 which are insulated from each other.
  • the touch panel is a liquid crystal display panel with a touch function
  • the pixel electrode layer 11 is used to display the liquid crystal display panel 12
  • the touch electrode layer 12 is disposed on the array substrate for realizing the touch of the liquid crystal display panel. Control function.
  • the touch electrode layer 12 is located on the side of the pixel electrode layer 11 facing the touch operation space 10, and the touch operation space 10 is a space area in which the user inputs a touch operation. Therefore, the touch electrode layer 12 can be closer to the touch operation space 10, thereby more easily sensing the touch operation of the user, which is beneficial to improving the sensitivity of the touch.
  • the array substrate further includes a plurality of mutually insulated touch electrode lines 13 , and the touch electrodes 13 are located on the color film substrate of the touch panel in a vertical projection area on the array substrate to reduce the touch electrodes. The effect of line 13 on the aperture ratio.
  • the touch electrode layer 12 includes a plurality of self-capacitive touch electrodes 121 insulated from each other.
  • each self-capacitive touch electrode 121 has a rectangular shape, and the self-capacitance touch electrode 121 has a width ranging from 5 mm to 8 mm, and may be 9 mm to 15 mm.
  • the shape of each self-capacitive touch electrode 121 may also be a circular shape, a triangular shape or the like, and the edge of the self-capacitive touch electrode 121 may also have a saw tooth.
  • Each of the self-capacitive touch electrodes 121 is connected to a corresponding touch electrode line 13 , and the touch electrode line 13 is connected to the touch chip (not shown) to sense the self-capacitive touch electrode 121 .
  • the touch signal is transmitted to the touch chip.
  • the principle of the touch control by the plurality of self-capacitive touch electrodes 121 is: when the human body does not touch the screen, the capacitance sensed by the respective capacitive touch electrodes 121 is a fixed value, when the human body touches the screen, for example, the finger is on the screen.
  • the capacitance sensed by the self-capacitive touch electrode corresponding to the position where the finger touches the screen is changed by the influence of the human body, thereby determining the finger by detecting the change of the capacitance value of each of the capacitive touch electrodes 121. Touch the location to achieve touch functionality.
  • the touch electrode line 13 is not in the same layer as the source/drain metal layer of the thin film transistor that drives the pixel electrode layer 11 , and is not disposed in the same layer as the data line that drives the pixel electrode layer 11 , that is, the source and drain metal layers are not used.
  • the metal layer of the same layer acts as a touch electrode line to reduce the impedance of the touch electrode line 13.
  • the touch electrode lines 13 are disposed in different layers from the corresponding self-capacitive touch electrodes 121.
  • the first surface of the pixel electrode layer 11 facing the touch operation space 10 is sequentially formed.
  • the edge layer 14 and the second insulating layer 15 are formed on the side of the second insulating layer 15 facing the touch operation space 10 .
  • the plurality of touch electrode lines 13 are formed on the side of the first insulating layer 14 facing the touch operation space 10, and the plurality of touch electrode lines 13 are located on the lower layer of the touch electrode layer 12, so that the touch electrode lines 13 and The corresponding self-capacitive touch electrodes 121 are arranged in different layers.
  • a plurality of first via holes 151 are disposed on the second insulating layer 15 , and some of the touch electrode lines 13 are in direct contact with the corresponding self-capacitive touch electrodes 121 , and the other touch electrodes 13 are respectively passed through the first lead.
  • the through hole 151 is connected to the corresponding self-capacitive touch electrode 121.
  • the plurality of touch electrode lines 13 may be formed on the side of the first insulating layer 14 facing away from the touch operation space 10, that is, in the same layer as the pixel electrode layer 11.
  • a via hole is disposed on the insulating layer 14 and the second insulating layer 15 to sequentially pass the touch electrode line 13 through the via hole on the first insulating layer 14 and the second insulating layer 15 and the corresponding self-capacitive touch electrode 121 connection.
  • only the first insulating layer 14 or the second insulating layer 15 may be provided between the pixel electrode layer 11 and the touch electrode layer 12.
  • the touch electrode layer 12 serves as a common electrode layer of the array substrate.
  • the plurality of touch electrode lines 13 input the common electrode signals required for display, so that the respective capacitive touch electrodes 121 have common electrode signals, thereby realizing display; in the touch scanning stage, multiple touch electrode lines 13 is used as a touch lead to be connected to the touch chip to transmit the sensing signals from the respective capacitive touch electrodes 121 to the touch chip, thereby implementing the touch function.
  • the material of the touch electrode layer 12 may be ITO (indium tin oxide) or graphene.
  • the array substrate of the present embodiment further includes a third insulating layer 16 , a source/drain metal layer 17 , a fourth insulating layer 18 , and a gate electrode 19 which are sequentially formed on the side of the pixel electrode layer 11 facing away from the touch operation operation space 10 .
  • the array substrate further includes a substrate 22 for carrying the above components, such as the pixel electrode layer 11, the active layer 21, the gate insulating layer 20, and the like.
  • the source and drain metal layer 17 includes a drain 171 and a source 172, and the drain 171 and the source 172 are in contact with the active layer 21, respectively.
  • the gate electrode 19, the drain electrode 171, and the source electrode 172 are respectively a gate, a drain, and a source of a thin film transistor that drives the pixel electrode layer 11.
  • the third insulating layer 16 is used to partition the pixel electrode layer 11 and the source and drain metal layer 17.
  • the third insulating layer 16 is provided with a second via hole 161, and the pixel electrode layer 11 is connected to the drain electrode 171 of the source/drain metal layer 17 through the second via hole 161.
  • the touch function is implemented by using the self-capacitive touch electrode 121, and only the touch electrode line 13 is required as the sensing line, and the driving line is not required to be disposed on the panel, thereby avoiding the increase of the width of the panel frame by the driving line. And can reduce the wiring inside the panel, which helps to reduce parasitic capacitance and can Reduce the effect of the line on the panel aperture ratio.
  • the touch electrode layer 12 on the side of the pixel electrode layer 11 facing the touch operation space 10, the touch sensitivity can be improved.
  • the touch panel is a liquid crystal display panel having a touch function, and includes an array substrate 31 , a color filter substrate 32 , and a liquid crystal layer between the array substrate 31 and the color filter substrate 32 . 33.
  • the array substrate 31 is the array substrate according to any of the above embodiments.
  • the touch panel may also be an OLED display panel with touch function or other display panel.
  • FIG. 4 is a method for manufacturing an array substrate according to an embodiment of the present invention.
  • the manufacturing method provided by the embodiment is used to manufacture the array substrate provided in the embodiment shown in FIG. 1.
  • the manufacturing method includes the following steps. :
  • Step S401 providing a substrate.
  • Step S402 forming a pixel electrode layer on the substrate.
  • Step S403 forming a touch electrode layer on the pixel electrode layer such that the touch electrode layer is located on a side of the pixel electrode layer facing the touch operation space, and the pixel electrode layer and the touch electrode layer are insulated from each other.
  • the touch electrode layer is formed on the side of the pixel electrode layer facing the touch operation space, thereby making the touch electrode layer closer to the touch operation space, thereby more easily sensing the touch operation of the user. Helps improve the sensitivity of touch.
  • the method before the step of forming a touch electrode layer on the pixel electrode layer, the method includes:
  • Step S501 forming a first insulating layer on the pixel electrode layer such that the first insulating layer is located on a side of the pixel electrode layer facing the touch operation space.
  • Step S502 forming a plurality of mutually insulated touch electrode lines on the first insulating layer.
  • Step S503 forming a second insulating layer on the plurality of touch electrode lines, such that the second insulating layer is located on a side of the pixel electrode layer facing the touch operation space.
  • Step S504 forming a plurality of first via holes on the second insulating layer.
  • the step of forming a touch electrode layer on the pixel electrode layer includes: forming a plurality of self-capacitance self-capacitive touch electrodes on the second insulating layer, and making each self-capacitive touch electrode and a corresponding touch Control electrode line connection.
  • the first insulating layer and the second insulating layer are spaced apart between the pixel electrode layer and the touch electrode layer, thereby achieving insulation between the two.
  • the touch electrode line is formed on the first insulating layer, and the self-capacitive touch electrode is formed on the second insulating layer, so that the touch electrode line and the self-capacitive touch electrode are disposed in different layers.
  • the at least part of the touch electrode lines are respectively connected to the corresponding self-capacitive touch electrodes through the first conductive vias, and the other touch electrodes are directly connected to the self-capacitive touch electrodes.
  • only the first insulating layer or the second insulating layer may be disposed between the pixel electrode layer and the touch electrode layer, and the touch electrode line may be disposed in the same layer as the pixel electrode layer.
  • the method further includes the steps of sequentially forming an active layer, a gate insulating layer, a gate electrode, a fourth insulating layer, a source/drain metal layer, and a third insulating layer on the substrate.
  • the pixel electrode layer is formed on the third insulating layer such that the active layer, the gate insulating layer, the gate electrode, the fourth insulating layer, the source/drain metal layer, and the third insulating layer are all located in a back direction of the pixel electrode layer Touch operation space side.
  • a second via hole is formed on the third insulating layer, and the pixel electrode layer is connected to the source/drain metal layer through the second via hole.
  • the source and drain metal layers include a source and a drain, the source and the drain are respectively connected to the active layer, and the pixel electrode layer is connected to the drain through the second via.
  • the gate, the source, and the drain are formed as the gate, the source, and the drain of the thin film transistor that drives the pixel electrode layer, respectively, to drive the pixel electrode layer.
  • the first insulating layer, the pixel electrode layer, the third insulating layer and the like are separated between the touch electrode line and the source/drain metal layer, so that the touch electrode line and the source/drain metal layer are not in the same layer, thereby Reduce the impedance of the touch electrode line.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Position Input By Displaying (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种触摸面板、阵列基板及其制造方法，所述阵列基板包括相互绝缘的像素电极层（11）和触控电极层（12），所述触控电极层（12）位于所述像素电极层（11）的朝向触控操作空间一侧。通过上述方式，能够提高触摸灵敏度。

Description

一种触摸面板、阵列基板及其制造方法 【技术领域】
本发明涉及触控技术领域，特别是涉及一种触摸面板、阵列基板及其制造方法。
【背景技术】
液晶显示器具有低功耗、低闪烁度、画面色彩逼真等优点，被广泛应用于移动电话、相机、计算机屏幕、电视机等电子产品中，为目前主流的显示器。
触摸屏具有坚固耐用、反应速度快、节省空间、易于交流等优点，利用触控技术，用户只需要用手指轻碰触摸屏幕上的图形符号或文字即可实现对主机的操作，从而使得人机交互更为直截了当，极大方便对电脑操作不熟悉的用户。
目前，许多电子设备的屏幕都是将液晶显示技术和触控技术相结合，不仅具有液晶显示器的优点，同时实现触控操作，备受消费者欢迎。然而，现有的具有触摸功能的液晶显示器中，受液晶显示器本身结构的影响，用于实现触摸功能的触控电极通常是位于液晶显示面板的像素电极之下，如此一来容易导致触控电极难以感测用户的触摸操作，降低了触控的灵敏度。
【发明内容】
本发明主要解决的技术问题是提供一种触摸面板、阵列基板及其制造方法，能够提高触摸的灵敏度。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种应用于触摸面板的阵列基板，包括多条相互绝缘的触控电极线、相互绝缘的像素电极层和触控电极层，所述触控电极层位于所述像素电极层的朝向触控操作空间一侧；其中，所述触控电极层包括多个相互绝缘的自电容式触控电极，每个所述自电容式触控电极与相应的一条所述触控电极线连接，所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层；所述触控电极层同时作为所述阵列基板的公共电极层。
其中，所述触控电极线与对应的所述自电容式触控电极异层设置。
其中，所述像素电极层的朝向触控操作空间一侧依次形成有第一绝缘层和 第二绝缘层，所述触控电极层形成于所述第二绝缘层的朝向触控操作空间一侧；所述触控电极线形成于所述第一绝缘层的朝向触控操作空间一侧，所述第二绝缘层上设置有多个第一导通孔，至少部分所述触控电极线分别通过所述第一导通孔与对应的所述自电容式触控电极连接。
其中，还包括依次形成于所述像素电极层的背向触控操作空间一侧的第三绝缘层、源漏极金属层、第四绝缘层、栅极、栅极绝缘层以及有源层，所述第三绝缘层上设置有第二导通孔，所述像素电极层通过所述第二导通孔与所述源漏极金属层连接。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种触摸面板，包括阵列基板，所述阵列基板包括相互绝缘的像素电极层和触控电极层，所述触控电极层位于所述像素电极层的朝向触控操作空间一侧。
其中，还包括多条相互绝缘的触控电极线，所述触控电极层包括多个相互绝缘的自电容式触控电极，每个所述自电容式触控电极与相应的一条所述触控电极线连接，所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层。
其中，所述触控电极线与对应的所述自电容式触控电极异层设置。
其中，所述像素电极层的朝向触控操作空间一侧依次形成有第一绝缘层和第二绝缘层，所述触控电极层形成于所述第二绝缘层的朝向触控操作空间一侧；所述触控电极线形成于所述第一绝缘层的朝向触控操作空间一侧，所述第二绝缘层上设置有多个第一导通孔，至少部分所述触控电极线分别通过所述第一导通孔与对应的所述自电容式触控电极连接。
其中，所述触控电极层同时作为所述阵列基板的公共电极层。
其中，还包括依次形成于所述像素电极层的背向触控操作空间一侧的第三绝缘层、源漏极金属层、第四绝缘层、栅极、栅极绝缘层以及有源层，所述第三绝缘层上设置有第二导通孔，所述像素电极层通过所述第二导通孔与所述源漏极金属层连接。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种阵列基板的制造方法，包括：提供衬底；在所述衬底上形成像素电极层；在所述像素电极层上形成触控电极层，以使得所述触控电极层位于所述像素电极层的朝向触控操作空间一侧，所述像素电极层和所述触控电极层相互绝缘。
其中，在所述像素电极层上形成触控电极层的步骤之前，包括：在所述像 素电极层上形成多条相互绝缘的触控电极线，多条所述触控电极线与所述像素电极层绝缘，且多条所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层；在所述像素电极层上形成触控电极层的步骤包括：在所述像素电极层上形成多个相互绝缘的自电容式触控电极，并使每个所述自电容式触控电极与对应的一条所述触控电极线连接。
其中，所述触控电极线与对应的所述自电容式触控电极异层设置；在所述像素电极层上形成多条相互绝缘的触控电极线的步骤之前，包括：在所述像素电极层上形成第一绝缘层，以使得所述第一绝缘层位于所述像素电极层的朝向触控操作空间一侧；在所述像素电极层上形成多条相互绝缘的触控电极线的步骤包括：在所述第一绝缘层上形成多条相互绝缘的触控电极线；在所述触控电极线上形成第二绝缘层，以使得所述第二绝缘层位于所述像素电极层的朝向触控操作空间一侧；在所述第二绝缘层上形成多个第一导通孔；所述在所述像素电极层上形成多个相互绝缘的自电容式触控电极的步骤包括：在所述第二绝缘层上形成多个相互绝缘的自电容式触控电极，并使至少部分触控电极线分别通过所述第一导通孔与对应的自电容式触控电极连接。
本发明的有益效果是：区别于现有技术的情况，本发明的阵列基板中，通过将触控电极层设置在像素电极层的朝向触控操作空间的一侧，由此可使得触控电极层更靠近触控操作空间，有利于触控电极层感应触控操作，能够提高触控的灵敏度。
【附图说明】
图1是本发明应用于触摸面板的阵列基板一实施方式的截面图；
图2是本发明应用于触摸面板的阵列基板一实施方式的平面图；
图3是本发明触摸面板一实施方式的结构示意图；
图4是本发明阵列基板的制造方法一实施方式的流程图；
图5是本发明阵列基板的制造方法一实施方式中，在像素电极层上形成触控电极层之前的流程图。
【具体实施方式】
下面将结合附图和实施方式对本发明进行详细说明。
参阅图1和图2，本发明应用于触摸面板的阵列基板一实施方式中，阵列基板包括相互绝缘的像素电极层11和触控电极层12。
本实施方式中，触摸面板为具有触控功能的液晶显示面板，像素电极层11用于实现液晶显示面板12的显示，触控电极层12设置在阵列基板上，用于实现液晶显示面板的触控功能。
其中，触控电极层12位于像素电极层11的朝向触控操作空间10一侧，触控操作空间10即为用户输入触控操作的空间区域。由此，可使得触控电极层12更靠近触控操作空间10，从而更容易感应用户的触控操作，有利于提高触控的灵敏度。
进一步地，阵列基板还包括多条相互绝缘的触控电极线13，触控电极线13位于触摸面板的彩膜基板上的黑色矩阵在阵列基板上的垂直投影区域内，以减小触控电极线13对开口率的影响。
触控电极层12包括多个相互绝缘的自电容式触控电极121。多个自电容式触控电极121呈阵列分布，每个自电容式触控电极121的面积范围可以在65～70mm2，例如可以66mm2、68mm2等，也可以设定为50～75mm2。本实施方式中，每个自电容式触控电极121为矩形，自电容式触控电极121的宽度范围可以是5mm～8mm，也可以是9mm～15mm等。其中，每个自电容式触控电极121的形状还可以是圆形、三角形或其他形状，并且自电容式触控电极121边缘还可以具有锯齿。
每个自电容式触控电极121与相应的一条触控电极线13连接，触控电极线13连接至触控芯片(图中未示)，以将自电容式触控电极121所感应到的触控信号传输至触控芯片。多个自电容式触控电极121实现触控的原理是：当人体未触碰屏幕时，各自电容式触控电极121所感知的电容为一固定值，当人体触碰屏幕，例如手指在屏幕上操作时，手指触碰屏幕的位置所对应的自电容式触控电极感知的电容受人体的影响而发生变化，由此通过检测各自容式触控电极121的电容值变化即可判断出手指触摸的位置，从而实现触控功能。
其中，触控电极线13与驱动像素电极层11的薄膜晶体管的源漏极金属层不在同一层，也不与驱动像素电极层11的数据线同层设置，即不使用与源漏极金属层同一层的金属层作为触控电极线，以降低触控电极线13的阻抗。并且，触控电极线13与对应的自电容式触控电极121异层设置。
具体地，像素电极层11的朝向触控操作空间10一侧上依次形成有第一绝 缘层14和第二绝缘层15，触控电极层12形成于第二绝缘层15的朝向触控操作空间10的一侧。其中，多条触控电极线13形成于第一绝缘层14的朝向触控操作空间10一侧，多条触控电极线13位于触控电极层12的下层，以使得触控电极线13和对应的自电容式触控电极121异层设置。第二绝缘层15上设置有多个第一导通孔151，部分触控电极线13与对应的自电容式触控电极121直接接触，而另一部分触控电极线13则分别通过第一导通孔151与对应的自电容式触控电极121连接。
当然，在其他实施方式中，多条触控电极线13也可以形成于第一绝缘层14的背向触控操作空间10一侧，即与像素电极层11同层设置，此时可在第一绝缘层14和第二绝缘层15上设置导通孔，使触控电极线13依次通过第一绝缘层14和第二绝缘层15上的导通孔与对应的自电容式触控电极121连接。并且，像素电极层11和触控电极层12之间也可以仅设置第一绝缘层14或第二绝缘层15。
继续参阅图1和图2，本实施方式中，触控电极层12同时作为阵列基板的公共电极层。在显示阶段，多条触控电极线13输入显示所需的公共电极信号，以使得各自电容式触控电极121上具有公共电极信号，进而实现显示；在触摸扫描阶段，多条触控电极线13用作触控引线连接至触控芯片，以将来自各自电容式触控电极121的感应信号传输给触控芯片，进而实现触控功能。
其中，触控电极层12的材料可以是ITO(氧化铟锡)或石墨烯。
此外，本实施方式的阵列基板还包括依次形成于像素电极层11的背向触控操作空间10一侧的第三绝缘层16、源漏极金属层17、第四绝缘层18、栅极19、栅极绝缘层20以及有源层21。其中阵列基板还包括衬底22，用于承载上述各元件，如像素电极层11、有源层21、栅极绝缘层20等。源漏极金属层17包括漏极171和源极172，漏极171和源极172分别与有源层21接触。栅极19、漏极171以及源极172分别为驱动像素电极层11的薄膜晶体管的栅极、漏极和源极。
其中，第三绝缘层16用于间隔像素电极层11和源漏极金属层17。第三绝缘层16上设置有第二导通孔161，像素电极层11通过第二导通孔161与源漏极金属层17中的漏极171连接。
本实施方式中，通过采用自电容式触控电极121实现触控功能，只需要触控电极线13作为感应线即可，而不需要在面板上设置驱动线，可避免驱动线增加面板边框宽度，并且能够减少面板内的线路，有利于减少寄生电容，且能够 减小线路对面板开口率的影响。此外，通过将触控电极层12设置在像素电极层11的朝向触控操作空间10一侧，可提高触控灵敏度。
参阅图3，在本发明触摸面板一实施方式中，触摸面板为具有触控功能的液晶显示面板，包括阵列基板31、彩膜基板32以及位于阵列基板31和彩膜基板32之间的液晶层33。其中，阵列基板31为前述任一实施方式所述的阵列基板。
当然，在其他实施方式中，触摸面板还可以是具有触控功能的OLED显示面板或其他显示面板。
参阅图4，图4是本发明实施方式所提供的一种阵列基板的制造方法，本实施方式提供的制造方法用于制造图1所示实施方式提供的阵列基板，所述制造方法包括如下步骤：
步骤S401：提供衬底。
步骤S402：在衬底上形成像素电极层。
步骤S403：在像素电极层上形成触控电极层，以使得触控电极层位于像素电极层的朝向触控操作空间一侧，像素电极层和触控电极层相互绝缘。
本实施方式中，通过将触控电极层形成于像素电极层的朝向触控操作空间一侧，由此可使得触控电极层更靠近触控操作空间，从而更容易感应用户的触控操作，有利于提高触控的灵敏度。
进一步地，参阅图5，在本实施方式中，在像素电极层上形成触控电极层的步骤之前，包括：
步骤S501：在像素电极层上形成第一绝缘层，以使得第一绝缘层位于像素电极层的朝向触控操作空间一侧。
步骤S502：在第一绝缘层上形成多条相互绝缘的触控电极线。
步骤S503：在多条触控电极线上形成第二绝缘层，以使得第二绝缘层位于像素电极层的朝向触控操作空间一侧。
步骤S504：在第二绝缘层上形成多个第一导通孔。
其中，在像素电极层上形成触控电极层的步骤包括：在第二绝缘层上形成多个相互绝缘的自电容式触控电极，并使每个自电容式触控电极与对应的一条触控电极线连接。像素电极层和触控电极层之间间隔了第一绝缘层和第二绝缘层，以此实现两者的绝缘。并且，触控电极线形成于第一绝缘层上，而自电容式触控电极形成于第二绝缘层上，以使得触控电极线和自电容式触控电极异层设置。
其中，至少部分触控电极线分别通过第一导通孔与对应的自电容式触控电极连接，另一部分触控电极线可直接与自电容式触控电极连接。
在其他实施方式中，像素电极层和触控电极层之间也可以仅设置第一绝缘层或第二绝缘层，触控电极线也可以与像素电极层同层设置。
此外，在衬底上形成像素电极的步骤之前，还包括步骤：在衬底上依次形成有源层、栅极绝缘层、栅极、第四绝缘层、源漏极金属层以及第三绝缘层。其中，像素电极层形成于第三绝缘层上，以使得有源层、栅极绝缘层、栅极、第四绝缘层、源漏极金属层以及第三绝缘层均位于像素电极层的背向触控操作空间一侧。
其中，第三绝缘层上形成有第二导通孔，像素电极层通过第二导通孔与源漏极金属层连接。进一步地，源漏极金属层包括源极和漏极，源极和漏极分别与有源层连接，像素电极层通过第二导通孔与漏极连接。所形成的栅极、源极和漏极分别作为驱动像素电极层的薄膜晶体管的栅极、源极和漏极，以实现像素电极层的驱动。
其中，触控电极线和源漏极金属层之间间隔了第一绝缘层、像素电极层、第三绝缘层等，以使得触控电极线和源漏极金属层不在同一层，由此可降低触控电极线的阻抗。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (13)

  1. 一种应用于触摸面板的阵列基板，其中，包括多条相互绝缘的触控电极线、相互绝缘的像素电极层和触控电极层，所述触控电极层位于所述像素电极层的朝向触控操作空间一侧；
    其中，所述触控电极层包括多个相互绝缘的自电容式触控电极，每个所述自电容式触控电极与相应的一条所述触控电极线连接，所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层；
    所述触控电极层同时作为所述阵列基板的公共电极层。
  2. 根据权利要求1所述的阵列基板，其中，所述触控电极线与对应的所述自电容式触控电极异层设置。
  3. 根据权利要求2所述的阵列基板，其中，所述像素电极层的朝向触控操作空间一侧依次形成有第一绝缘层和第二绝缘层，所述触控电极层形成于所述第二绝缘层的朝向触控操作空间一侧；
    所述触控电极线形成于所述第一绝缘层的朝向触控操作空间一侧，所述第二绝缘层上设置有多个第一导通孔，至少部分所述触控电极线分别通过所述第一导通孔与对应的所述自电容式触控电极连接。
  4. 根据权利要求1所述的阵列基板，其中，还包括依次形成于所述像素电极层的背向触控操作空间一侧的第三绝缘层、源漏极金属层、第四绝缘层、栅极、栅极绝缘层以及有源层，所述第三绝缘层上设置有第二导通孔，所述像素电极层通过所述第二导通孔与所述源漏极金属层连接。
  5. 一种触摸面板，其中，包括阵列基板，所述阵列基板包括相互绝缘的像素电极层和触控电极层，所述触控电极层位于所述像素电极层的朝向触控操作空间一侧。
  6. 根据权利要求5所述的触摸面板，其中，还包括多条相互绝缘的触控电极线，所述触控电极层包括多个相互绝缘的自电容式触控电极，每个所述自电容式触控电极与相应的一条所述触控电极线连接，所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层。
  7. 根据权利要求6所述的触摸面板，其中，所述触控电极线与对应的所述自电容式触控电极异层设置。
  8. 根据权利要求7所述的触摸面板，其中，所述像素电极层的朝向触控操作空间一侧依次形成有第一绝缘层和第二绝缘层，所述触控电极层形成于所述第二绝缘层的朝向触控操作空间一侧；
    所述触控电极线形成于所述第一绝缘层的朝向触控操作空间一侧，所述第二绝缘层上设置有多个第一导通孔，至少部分所述触控电极线分别通过所述第一导通孔与对应的所述自电容式触控电极连接。
  9. 根据权利要求5所述的触摸面板，其中，所述触控电极层同时作为所述阵列基板的公共电极层。
  10. 根据权利要求5所述的触摸面板，其中，还包括依次形成于所述像素电极层的背向触控操作空间一侧的第三绝缘层、源漏极金属层、第四绝缘层、栅极、栅极绝缘层以及有源层，所述第三绝缘层上设置有第二导通孔，所述像素电极层通过所述第二导通孔与所述源漏极金属层连接。。
  11. 一种阵列基板的制造方法，其中，包括：
    提供衬底；
    在所述衬底上形成像素电极层；
    在所述像素电极层上形成触控电极层，以使得所述触控电极层位于所述像素电极层的朝向触控操作空间一侧，所述像素电极层和所述触控电极层相互绝缘。
  12. 根据权利要求11所述的方法，其中，在所述像素电极层上形成触控电极层的步骤之前，包括：在所述像素电极层上形成多条相互绝缘的触控电极线，多条所述触控电极线与所述像素电极层绝缘，且多条所述触控电极线与驱动所述像素电极层的薄膜晶体管的源漏极金属层不在同一层；
    在所述像素电极层上形成触控电极层的步骤包括：
    在所述像素电极层上形成多个相互绝缘的自电容式触控电极，并使每个所述自电容式触控电极与对应的一条所述触控电极线连接。
  13. 根据权利要求12所述的方法，其中，所述触控电极线与对应的所述自电容式触控电极异层设置；
    在所述像素电极层上形成多条相互绝缘的触控电极线的步骤之前，包括：在所述像素电极层上形成第一绝缘层，以使得所述第一绝缘层位于所述像素电极层的朝向触控操作空间一侧；
    在所述像素电极层上形成多条相互绝缘的触控电极线的步骤包括：
    在所述第一绝缘层上形成多条相互绝缘的触控电极线；
    在所述触控电极线上形成第二绝缘层，以使得所述第二绝缘层位于所述像素电极层的朝向触控操作空间一侧；
    在所述第二绝缘层上形成多个第一导通孔；
    所述在所述像素电极层上形成多个相互绝缘的自电容式触控电极的步骤包括：在所述第二绝缘层上形成多个相互绝缘的自电容式触控电极，并使至少部分触控电极线分别通过所述第一导通孔与对应的自电容式触控电极连接。
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