WO2017043308A1 - 固体撮像素子、製造方法、および電子機器 - Google Patents
固体撮像素子、製造方法、および電子機器 Download PDFInfo
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- WO2017043308A1 WO2017043308A1 PCT/JP2016/074580 JP2016074580W WO2017043308A1 WO 2017043308 A1 WO2017043308 A1 WO 2017043308A1 JP 2016074580 W JP2016074580 W JP 2016074580W WO 2017043308 A1 WO2017043308 A1 WO 2017043308A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
Definitions
- the present disclosure relates to a solid-state imaging device, a manufacturing method, and an electronic device, and more particularly, to a solid-state imaging device, a manufacturing method, and an electronic device that can be improved in quality.
- a manufacturing method of a solid-state imaging device such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) image sensor
- a step of forming various films such as a planarization film on a semiconductor substrate.
- a spin coat method is used in which a thin film can be uniformly formed using a centrifugal force generated by rotating a semiconductor substrate at a high speed.
- Patent Document 1 discloses a solid-state imaging device that can improve image quality even when a spin coating method is used for film formation.
- the present disclosure has been made in view of such a situation, and is intended to further improve the quality.
- a solid-state imaging device includes a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array, a planarization film that is formed so as to fill a concave portion of the semiconductor substrate, and the pixel region Corresponding to the color filter layer formed in the recessed region formed in the planarizing film.
- a method for manufacturing a solid-state imaging device in which a planarization film is formed so as to fill a recess of a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array, and the solid-state imaging device corresponds to the pixel region. Forming a color filter layer in the recessed area formed in the planarizing film.
- An electronic device includes a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array, a planarization film formed so as to fill a concave portion of the semiconductor substrate, and the pixel region
- a solid-state imaging device having a color filter layer formed in a recessed region formed in the planarizing film is provided.
- a planarization film is formed so as to fill a concave portion of a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array, and is formed on the planarization film corresponding to the pixel region.
- a color filter layer is formed in the recessed region.
- quality can be further improved.
- FIG. 1 is a diagram illustrating a configuration example of an embodiment of a solid-state imaging device to which the present technology is applied.
- FIG. 1A shows a cross-sectional configuration example of the solid-state imaging device
- FIG. 1B shows a planar configuration in the color filter layer of the solid-state imaging device of FIG. .
- the solid-state imaging device 11 is configured by laminating a semiconductor substrate 12, a planarizing film 13, a color filter layer 14, and an on-chip lens layer 15.
- the semiconductor substrate 12 is, for example, a plate-like wafer obtained by thinly slicing single crystal silicon, and a pixel region 21 in which a plurality of pixels are arranged in an array is formed.
- the planarizing film 13 is formed by, for example, applying an organic or inorganic polymer material by a spin coating method so as to fill a recess (for example, a scribe line) formed in the semiconductor substrate 12. Make the surface flat.
- the color filter layer 14 is configured by arranging a filter that transmits light of colors (for example, three primary colors of red, blue, and green) received by each pixel for each of a plurality of pixels formed in the pixel region 21.
- the color filter layer 14 is formed in a recessed region (a recessed region 32 in FIG. 2 described later) formed by recessing the surface of the planarizing film 13. Formed to be embedded.
- the color filter layer 14 is formed so that the surface thereof is flat with the surface of the planarizing film 13.
- the on-chip lens layer 15 is configured by arranging a small lens having a pixel size so as to collect light for each of a plurality of pixels formed in the pixel region 21.
- the solid-state imaging device 11 configured in this manner can suppress coating unevenness that occurs when the color filter layer 14 is formed by embedding the color filter layer 14 in the recessed region of the planarization film 13. it can. Thereby, the thickness of the color filter layer 14 can be formed uniformly, and the quality of the solid-state imaging device 11 can be improved. Therefore, it is possible to avoid the occurrence of non-uniform brightness for each color of the image captured by the solid-state imaging device 11 (for each color filter of the color filter layer 14), and to improve the image quality. it can.
- the solid-state imaging device 11 is configured such that the surface of the planarizing film 13 and the color filter layer 14 is flat in a state where the color filter layer 14 is formed, thereby forming the on-chip lens layer 15 on the surface. It is possible to suppress coating unevenness that occurs at the time. Thereby, the lens of the on-chip lens layer 15 can be formed in a uniform shape, and the quality of the solid-state imaging device 11 can be improved. Therefore, it is possible to avoid the occurrence of brightness non-uniformity for each pixel of the image captured by the solid-state imaging device 11 (for each lens of the on-chip lens layer 15), and to improve the image quality. .
- an N-type impurity is ion-implanted into a P-type semiconductor substrate 12 to form a photodiode for each pixel.
- a pixel region 21 is formed on the semiconductor substrate 12.
- the peripheral region that is the periphery where the pixel region 21 of the semiconductor substrate 12 is formed for example, when the solid-state imaging device 11 is separated into a concave groove portion 22 used for an alignment mark or the like.
- a concave scribe line 23 is formed as a boundary. It should be noted that a plurality of solid-state imaging devices 11 can be manufactured simultaneously with a single semiconductor wafer and are separated into individual pieces in a later process.
- a material to be the planarizing film 13 is applied to the semiconductor substrate 12 by spin coating, so that the surface of the planarizing film 13 is in a flat state. To do. At this time, the planarizing film 13 is formed so as to fill the groove 22 and the scribe line 23.
- a photoresist 31 is applied on the planarizing film 13.
- the fourth step as shown in the fourth stage of FIG. 2, exposure and development processing is performed on the photoresist 31 to remove a part thereof, and this corresponds to a region where the color filter layer 14 is formed in the subsequent step.
- An opening that opens is formed in the photoresist 31. That is, the exposure and development processing is performed so that the photoresist 31 is left in a portion other than the region where the color filter layer 14 is formed.
- the planarizing film 13 is etched by a necessary amount (depth) using an etching apparatus, so that a part of the planarizing film 13 corresponding to the opening of the photoresist 31 is removed. To do. Thereafter, the photoresist 31 is removed so that the surface of the planarization film 13 is cut out and the color filter layer 14 is embedded corresponding to the pixel region 21 of the semiconductor substrate 12 as shown in the fifth row of FIG. The recessed area 32 is formed.
- the pattern of the green filter 14 ⁇ / b> G constituting the color filter layer 14 is formed in the recessed region 32 formed in the planarizing film 13.
- a green color filter resist generally a negative photosensitive resin
- spin coating the green color filter resist is applied by spin coating, and after the green color filter resist is dried, it is exposed using a mask that can be irradiated with ultraviolet rays.
- a pattern of the green filter 14G is formed using the developer.
- the pattern of the blue filter 14 ⁇ / b> B constituting the color filter layer 14 is formed in the recessed area 32 formed in the planarizing film 13.
- a blue color filter resist is applied by spin coating, and after the blue color filter resist is dried, it is exposed using a mask that can be irradiated with ultraviolet rays, and a pattern of the blue filter 14B is formed using a dedicated developer. Is done.
- the pattern of the red filter 14 ⁇ / b> R constituting the color filter layer 14 is formed in the recessed region 32 formed in the planarizing film 13.
- a red color filter resist is applied by a spin coating method, and after the red color filter resist is dried, exposure is performed using a mask capable of ultraviolet irradiation, and a pattern of the red filter 14R is formed using a dedicated developer. Is done.
- the color filter layer 14 including the green filter 14G, the blue filter 14B, and the red filter 14R is formed in the recessed region 32.
- a lens material 15a made of a transparent resin is applied to the surfaces of the planarizing film 13 and the color filter layer 14 by a spin coating method.
- an on-chip lens layer 15 is formed as shown in the fifth row of FIG. 3 by forming a lens pattern for each pixel on the lens material 15a.
- the wafer is cut along the scribe line 23 by using a dicing blade or the like, so that the solid-state image pickup device 11 that is separated into pieces is manufactured.
- the solid-state imaging device 11 manufactured by the above process forms the color filter layer 14 in the recessed region 32 formed in the planarizing film 13 according to the pixel region 21, and spin coats the color filter resist.
- the coating unevenness that occurs when coating can be suppressed.
- the on-chip lens layer 15 on the flat surface composed of the planarizing film 13 and the color filter layer 14, the application unevenness that occurs when the lens material 15a is applied by spin coating is suppressed. Can do.
- FIG. 4A shows a cross-sectional configuration example of a conventional solid-state imaging device 11A
- FIG. 4B shows a process of manufacturing the color filter layer 14 of the solid-state imaging device 11A.
- the surface of the planarizing film 13 is formed flat on the semiconductor substrate 12 on which the pixel region 21 is formed, and the color filter layer 14 is formed on the surface of the planarizing film 13, On-chip lens layer 15 is laminated thereon. That is, the solid-state imaging device 11 in FIG. 1 has a configuration in which the color filter layer 14 is formed so as to be embedded in the recessed region 32 (see FIG. 2) hollowed out in the planarization film 13, whereas the solid-state imaging device 11 11A has a configuration in which a color filter layer 14 is formed on the planarizing film 13. Due to the difference in configuration, in the solid-state imaging device 11A, when the color filter layer 14 is formed, coating unevenness may occur in the color filter resist.
- the green filter 14G and the blue filter 14B are formed on the planarizing film 13 so as to have a convex shape. ing. At this time, coating unevenness occurs in the red color filter resist due to the step formed so that the green filter 14G and the blue filter 14B protrude from the planarizing film 13.
- the green filter 14G formed in a convex shape on the planarizing film 13 causes uneven application to the blue color filter resist. appear.
- the semiconductor wafer 51 is rotated at a high speed around the center point of the semiconductor wafer 51 on which the plurality of solid-state imaging devices 11 ⁇ / b> A are formed, and a color is formed at the center of the semiconductor wafer 51.
- a filter resist photosensitive organic material
- the color filter resist is spread by the centrifugal force caused by the rotation, so that it is applied to the entire surface of the semiconductor wafer 51 with a uniform thickness.
- the high stepped portion causes the semiconductor wafer 51 to move outward from the center. As a result, coating unevenness as shown by broken lines occurs.
- the portion where the red filter 14R is formed is flat. It has a concave shape with respect to the chemical film 13. For this reason, unlike the situation in which the green filter 14G and the blue filter 14B are formed in a convex shape on the planarizing film 13, it is possible to suppress the influence of the step when the red color filter resist is formed.
- the portion where the blue filter 14 ⁇ / b> B is formed has a concave shape with respect to the planarizing film 13. The influence received by the step can be suppressed.
- the solid-state imaging device 11 can suppress coating unevenness generated in the color filter resist when the color filter layer 14 is formed due to the difference in structure from the solid-state imaging device 11A.
- the solid-state imaging device 11 can suppress coating unevenness that occurs when the lens material 15a of the on-chip lens layer 15 is applied.
- the solid-state imaging device 11 of FIG. 1 has a flat surface of the planarizing film 13 and the color filter layer 14, and therefore when the lens material 15 a is applied.
- the occurrence of coating unevenness can be suppressed. Accordingly, since the lens material 15a is formed with a uniform thickness, the lens of the on-chip lens layer 15 formed of the lens material 15a can be formed with a uniform shape with high accuracy.
- the pixel region 21 is formed in the semiconductor substrate 12 as in the first process (FIG. 2).
- a resin to be the first planarizing film 13-1 is applied to the semiconductor substrate 12 by spin coating, and the first planarizing film The surface of 13-1 is made flat.
- the first planarizing film 13-1 is formed so as to be thinner than the thickness of the planarizing film 13 of FIG. 1 and equal to the remaining thickness in which the recessed region 32 is formed in the planarizing film 13.
- a resin having no photosensitivity is used for the first planarization film 13-1.
- a resin to be the second planarizing film 13-2 is applied onto the first planarizing film 13-1 by spin coating. Then, the surface of the second planarizing film 13-2 is made flat. Here, the second planarizing film 13-2 is formed with a film thickness that is the height of the color filter layer.
- the second planarizing film 13-2 is made of a resin that has photosensitivity by adding a photosensitive material to a resin that is the same material as the first planarizing film 13-1.
- the 24th step as shown in the fourth stage of FIG. 7, exposure using a reticle is performed to cut out the second planarizing film 13-2 in accordance with the region where the color filter layer 14 is formed. Then, development is performed to remove a part of the second planarization film 13-2. As a result, the second planarization film 13-2 is formed outside the region corresponding to the pixel region 21, and the planarization including the first planarization film 13-1 and the second planarization film 13-2 is performed. A recessed region 32 is formed in the film 13.
- the color filter layer 14 and the on-chip lens layer 15 are formed by performing the same processes as those after the sixth process in FIG. 3, and the solid-state imaging device 11 is manufactured.
- the recessed region 32 in the planarizing film 13 By forming the recessed region 32 in the planarizing film 13 by such a manufacturing method, the coating unevenness generated when the color filter layer 14 and the on-chip lens layer 15 are formed is suppressed as in the above-described manufacturing method. be able to.
- FIG. 8A shows a cross-sectional configuration example in a state in which the recessed region 32 is formed in the planarizing film 13, as in the fifth stage of FIG.
- a step that is recessed toward the center is formed on the outer peripheral portion of the recessed region 32 of the planarizing film 13, such as a portion surrounded by a broken line.
- the recessed area 32 is formed on the outer periphery of the recessed area 32 so that the influence of the step of the recessed area 32 when the color filter layer 14 is formed is suppressed.
- the taper surface which inclines at a predetermined angle according to the height (depth) of is formed.
- an ineffective area is provided outside the effective area, which is an area where the function as the color filter layer 14 is effective, and the depression area 32 is formed so that the range in which the coating unevenness occurs in the color filter resist is within the ineffective area.
- the angle of the outer peripheral taper surface is set.
- the formation position of the color filter layer 14 is set at a predetermined interval from the outer peripheral portion of the recessed region 32 so that the end of the color filter layer 14 is disposed in the invalid region.
- the influence of the step of the dent region 32 when the color filter resist is applied is also suppressed by adjusting the formation position so that the color filter layer 14 is formed slightly inside the dent region 32. be able to.
- the solid-state imaging device 11 can form a tapered surface on the outer peripheral portion of the recessed region 32 by appropriately setting the process conditions when forming the recessed region 32, for example, and the color filter resist
- the range in which coating unevenness occurs can be limited to the ineffective area.
- the solid-state image sensor 11 can form the color filter layer 14 in an effective area
- the solid-state imaging device 11 includes various types such as an imaging system such as a digital still camera or a digital video camera, a mobile phone having an imaging function, or other equipment having an imaging function. It can be applied to other electronic devices.
- an imaging system such as a digital still camera or a digital video camera
- a mobile phone having an imaging function or other equipment having an imaging function. It can be applied to other electronic devices.
- FIG. 9 is a block diagram illustrating a configuration example of an imaging device mounted on an electronic device.
- the imaging apparatus 101 includes an optical system 102, an imaging element 103, a signal processing circuit 104, a monitor 105, and a memory 106, and can capture still images and moving images.
- the optical system 102 includes one or more lenses, guides image light (incident light) from a subject to the image sensor 103, and forms an image on a light receiving surface (sensor unit) of the image sensor 103.
- the solid-state image sensor 11 of the above-described embodiment is applied.
- the image sensor 103 electrons are accumulated for a certain period according to an image formed on the light receiving surface via the optical system 102. Then, a signal corresponding to the electrons accumulated in the image sensor 103 is supplied to the signal processing circuit 104.
- the signal processing circuit 104 performs various signal processing on the pixel signal output from the image sensor 103.
- An image (image data) obtained by performing signal processing by the signal processing circuit 104 is supplied to the monitor 105 and displayed, or supplied to the memory 106 and stored (recorded).
- the imaging apparatus 101 configured as described above, by applying the solid-state imaging device 11 of the above-described embodiment, for example, it is possible to capture an image with uniform brightness and good image quality.
- FIG. 10 is a diagram showing a usage example in which the above-described image sensor (solid-state imaging device 11) is used.
- the image sensor described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
- Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
- Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
- Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
- Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus
- this technique can also take the following structures.
- a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array;
- a planarization film formed so as to fill the recess of the semiconductor substrate;
- a solid-state imaging device comprising: a color filter layer formed in a recessed region formed in the planarizing film corresponding to the pixel region.
- the concave region is formed by forming the planarizing film and then hollowing out a region corresponding to the pixel region of the planarizing film according to the thickness of the color filter layer.
- a first planarizing film is formed flat with a predetermined thickness, and a second planarizing film is formed outside the area corresponding to the pixel area with respect to the first planarizing film.
- the solid-state imaging device according to (1) which is formed by forming a film.
- the taper surface is formed in the outer peripheral part of the said dent area
- the color filter layer is formed at a formation position where an end portion of the color filter layer is disposed in an ineffective region provided outside an effective region that is a region in which the function as the color filter layer is enabled.
- the solid-state imaging device according to any one of 1) to (5).
- a planarizing film is formed so as to fill a recess of a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array,
- a method of manufacturing a solid-state imaging device including a step of forming a color filter layer in a recessed region formed in the planarizing film corresponding to the pixel region.
- a semiconductor substrate having a pixel region in which a plurality of pixels are arranged in an array; A planarization film formed so as to fill the recess of the semiconductor substrate;
- An electronic apparatus comprising: a solid-state imaging device having a color filter layer formed in a recessed region formed in the planarization film corresponding to the pixel region.
- 11 solid-state imaging device 12 semiconductor substrate, 13 flattening film, 14 color filter layer, 14G green filter, 14B blue filter, 14R red filter, 15 on-chip lens layer, 21 pixel area, 22 groove, 23 scribe line, 31 photo Resist, 32 recessed area, 51 semiconductor wafer
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Abstract
Description
・自動停止等の安全運転や、運転者の状態の認識等のために、自動車の前方や後方、周囲、車内等を撮影する車載用センサ、走行車両や道路を監視する監視カメラ、車両間等の測距を行う測距センサ等の、交通の用に供される装置
・ユーザのジェスチャを撮影して、そのジェスチャに従った機器操作を行うために、TVや、冷蔵庫、エアーコンディショナ等の家電に供される装置
・内視鏡や、赤外光の受光による血管撮影を行う装置等の、医療やヘルスケアの用に供される装置
・防犯用途の監視カメラや、人物認証用途のカメラ等の、セキュリティの用に供される装置
・肌を撮影する肌測定器や、頭皮を撮影するマイクロスコープ等の、美容の用に供される装置
・スポーツ用途等向けのアクションカメラやウェアラブルカメラ等の、スポーツの用に供される装置
・畑や作物の状態を監視するためのカメラ等の、農業の用に供される装置
(1)
複数の画素がアレイ状に配置された画素領域を有する半導体基板と、
前記半導体基板の凹部を埋め込むように成膜される平坦化膜と、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内に形成されるカラーフィルタ層と
を備える固体撮像素子。
(2)
前記凹み領域は、前記平坦化膜を成膜した後、前記カラーフィルタ層の厚みに応じて前記平坦化膜の前記画素領域に対応する領域をくり抜くことにより形成される
上記(1)に記載の固体撮像素子。
(3)
前記凹み領域は、所定の厚みで平坦に第1の平坦化膜を成膜し、前記第1の平坦化膜に対して前記画素領域に対応する領域の外側に第2の平坦化膜を成膜することにより形成される
上記(1)に記載の固体撮像素子。
(4)
前記平坦化膜および前記カラーフィルタ層からなる平面上に形成されるオンチップレンズ層
をさらに備える上記(1)から(3)までのいずれかに記載の固体撮像素子。
(5)
前記凹み領域の外周部にテーパ面が形成される
上記(1)から(4)までのいずれかに記載の固体撮像素子。
(6)
前記カラーフィルタ層としての機能が有効とされる領域である有効領域の外側に設けられる無効領域に、前記カラーフィルタ層の端部が配置される形成位置で前記カラーフィルタ層が形成される
上記(1)から(5)までのいずれかに記載の固体撮像素子。
(7)
複数の画素がアレイ状に配置された画素領域を有する半導体基板の凹部を埋め込むように平坦化膜を成膜し、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内にカラーフィルタ層を形成する
工程を含む固体撮像素子の製造方法。
(8)
複数の画素がアレイ状に配置された画素領域を有する半導体基板と、
前記半導体基板の凹部を埋め込むように成膜される平坦化膜と、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内に形成されるカラーフィルタ層と
を有する固体撮像素子を備える電子機器。
Claims (8)
- 複数の画素がアレイ状に配置された画素領域を有する半導体基板と、
前記半導体基板の凹部を埋め込むように成膜される平坦化膜と、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内に形成されるカラーフィルタ層と
を備える固体撮像素子。 - 前記凹み領域は、前記平坦化膜を成膜した後、前記カラーフィルタ層の厚みに応じて前記平坦化膜の前記画素領域に対応する領域をくり抜くことにより形成される
請求項1に記載の固体撮像素子。 - 前記凹み領域は、所定の厚みで平坦に第1の平坦化膜を成膜し、前記第1の平坦化膜に対して前記画素領域に対応する領域の外側に第2の平坦化膜を成膜することにより形成される
請求項1に記載の固体撮像素子。 - 前記平坦化膜および前記カラーフィルタ層からなる平面上に形成されるオンチップレンズ層
をさらに備える請求項1に記載の固体撮像素子。 - 前記凹み領域の外周部にテーパ面が形成される
請求項1に記載の固体撮像素子。 - 前記カラーフィルタ層としての機能が有効とされる領域である有効領域の外側に設けられる無効領域に、前記カラーフィルタ層の端部が配置される形成位置で前記カラーフィルタ層が形成される
請求項1に記載の固体撮像素子。 - 複数の画素がアレイ状に配置された画素領域を有する半導体基板の凹部を埋め込むように平坦化膜を成膜し、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内にカラーフィルタ層を形成する
工程を含む固体撮像素子の製造方法。 - 複数の画素がアレイ状に配置された画素領域を有する半導体基板と、
前記半導体基板の凹部を埋め込むように成膜される平坦化膜と、
前記画素領域に対応して前記平坦化膜に形成される凹み領域内に形成されるカラーフィルタ層と
を有する固体撮像素子を備える電子機器。
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