WO2017020556A1 - 基板组件及其制备方法以及显示装置 - Google Patents

基板组件及其制备方法以及显示装置 Download PDF

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WO2017020556A1
WO2017020556A1 PCT/CN2016/070776 CN2016070776W WO2017020556A1 WO 2017020556 A1 WO2017020556 A1 WO 2017020556A1 CN 2016070776 W CN2016070776 W CN 2016070776W WO 2017020556 A1 WO2017020556 A1 WO 2017020556A1
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Prior art keywords
substrate
dam
substrate assembly
bank
grooves
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PCT/CN2016/070776
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English (en)
French (fr)
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宋莹莹
孙力
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京东方科技集团股份有限公司
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Priority to US15/107,876 priority Critical patent/US10079272B2/en
Publication of WO2017020556A1 publication Critical patent/WO2017020556A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the technical field of OLED manufacturing, and in particular to a substrate assembly suitable for an OLED and a method of fabricating the same.
  • OLED Organic light-emitting diode
  • LCD organic electroluminescence
  • PLOLED displays since the commercialization of PLOLED displays published by Pioneer in 1996, OLED displays seem to face great challenges in terms of large-scale and mass production.
  • the major challenges come from two main aspects.
  • the first is the active matrix TFT backplane, and the other is the manufacturing and packaging of organic materials.
  • In the process of organic materials there are mainly evaporation processes and solution processes.
  • vacuum thermal evaporation technology faces great drawbacks, such as the visor is highly susceptible to the high temperature environment in the process, and it is difficult to maintain a uniform deposition rate on the substrate.
  • Inkjet printing technology is used in the solution process. Among them, the inkjet printing technology can form a thin film layer by uniform deposition of liquid organic materials, and therefore, this technology can theoretically solve the problem of large size.
  • Inkjet printing is divided into continuous printing and discontinuous printing.
  • the continuous printing method belongs to a non-mask and non-contact type process, and has the advantages of successive printing. Because the caliber is relatively large, the ink can be continuously and stably ejected without clogging the nozzle, and the yield is high, and the enlargement is easy, and the Ink composition has a large degree of freedom. . However, in the process of continuous printing, it is necessary to perform ink ejection on a few rows of pixels in one printing cycle, and ink jetting on other rows of pixels in the next printing cycle, so that the printing is sequentially performed in a cycle to realize the entire substrate. Jet.
  • the present invention provides a substrate assembly and a method of fabricating the same.
  • a substrate assembly comprising: a substrate; an electrode on the substrate, a metal wiring, and a TFT; and a bank above the substrate, the bank surrounding the pixel region and exposing the electrode
  • the surface of the dam remote from the substrate includes one or more grooves adapted to collect ink drops remaining on the dam in a subsequent inkjet printing process.
  • the substrate assembly is adapted to be fabricated into an OLED display panel via a continuous inkjet printing process.
  • the dam is made of a hydrophobic material.
  • an insulating protective layer is also present between the bank and the metal wiring and the TFT layer.
  • the grooves are located on a dam having a size of 100 microns or more in the row or column direction of the substrate.
  • the groove is a frustum structure and the opening has an opening diameter of 20-100 microns at the surface of the dam.
  • the groove has a minimum dimension of at least 20 microns in the horizontal dimension at the surface of the dam.
  • the recess is located on a dam corresponding to the TFT and the metal wiring.
  • a method of fabricating a substrate assembly comprising: forming a metal wiring, a TFT, and an electrode on a substrate; forming a bank over the substrate, and the bank surrounding the pixel region and exposing the electrode; One or more grooves are formed on a surface of the dam remote from the substrate, wherein the grooves are used to collect ink drops remaining on the dam during subsequent inkjet printing.
  • the grooves are prepared using a mask of adjustable exposure.
  • the dam is formed via a coating and mask exposure development process, and the grooves are formed by exposure development using the same mask used to form the dam as the exposure develops.
  • the grooves are formed on a bank having a size of 100 microns or more in the row or column direction of the substrate.
  • the method further includes the steps of spraying the organic luminescent material solution over the substrate and performing a drying process, and further comprising forming another electrode And the steps to perform the encapsulation.
  • a display device comprising a substrate assembly as described above.
  • the invention has the beneficial effects that the grooves are prepared on the dam of the pixel TFT and the metal wiring area, so that the ink falling in the area during the continuous printing process is collected in the groove, thereby solving the conventional dam design due to the ink drop.
  • the residue here causes a change in the surface hydrophobic property, which further leads to more ink remaining in subsequent printing or further affecting the uniformity of the ink inside the pixel or causing cross-color phenomenon between pixels.
  • the preparation of the groove does not require an additional mask or an additional process, and is simple and easy to implement.
  • Figure 1 illustrates a schematic view of a prior art substrate assembly
  • FIG. 2 is a side cross-sectional view showing a schematic view of a prior art substrate assembly
  • FIG. 3 shows a schematic view of a substrate assembly in accordance with an embodiment of the present invention
  • FIG. 4 shows a schematic view of a substrate assembly in accordance with another embodiment of the present invention.
  • FIG. 5 illustrates a method of fabricating a substrate assembly in accordance with an embodiment of the present invention.
  • the portions, elements or layers of material formed or positioned "above” the surface are such that The word “above” may be used herein to mean that the portion, element or layer of material is positioned “directly on” the surface (eg, placed, formed, deposited, etc.), such as in direct contact therewith.
  • the word “above” as used in relation to a portion, element or layer of material formed or positioned “above” a surface may be used herein to mean that the portion, element or layer of material is positioned (eg, placed, formed, deposited, etc.) "Indirectly on” the surface implied, with one or more additional portions, elements or layers disposed between the suggested surface and the portion, element or layer of material.
  • Figure 1 illustrates a schematic of a prior art substrate assembly.
  • the substrate assembly can be used to fabricate OLED lighting devices.
  • Figure 1 shows elements of several exemplary pixel regions and perimeters on a substrate.
  • the prior art substrate assembly includes a pixel region 2, a TFT 3, and a metal wiring 4 formed on a substrate.
  • the electrode there is an electrode at each quasi-rectangular pixel region 2, which is typically an anode electrode (which will be ejected with an organic luminescent material in a subsequent process), the electrode typically being made of a hydrophilic conductive material, such as indium tin Made of oxide (ITO) or made of metal.
  • ITO indium tin Made of oxide
  • the thin film transistor (TFT) 3 and the metal wiring 4 and other necessary components are surrounded around the boundary region around the pixel region 2.
  • an insulating protective layer and a planarizing film are generally formed on the TFT 3 and the metal wiring 4, and the description of these conventional portions is omitted in the present application.
  • the shape of the pixel region is not limited to the shape shown in the drawing, and may be any shape suitable such as a circle, an ellipse or the like.
  • the above components are all well-known components of those skilled in the art, and the preparation thereof is also a process well known in the art, and a description of the specific preparation method thereof is omitted here.
  • a bank 6 made of a hydrophobic material is formed on the boundary region, which may also be referred to as a bank, a partition wall, a bank or the like.
  • the dam is used to surround the pixel region to form the well 2. This well 2 facilitates the accumulation of ink droplets into the well 2 during subsequent inkjet printing.
  • a schematic view of a portion of a prior art substrate assembly is shown in side cross-sectional view in FIG.
  • a side cross-sectional view of the bank 6 and the substrate 5 is shown with reference to the top view shown in FIG.
  • the dam 6 can be formed by depositing or coating a layer of a hydrophobic material on a substrate and then performing mask exposure development.
  • the hydrophobic material used in the dam 6 may be an organic fluoropolymer or other suitable material.
  • the surface of the dam 6 is hydrophobic so that during subsequent inkjet printing, the ink droplets are It does not remain on the dam 6, but accumulates in the well 2, the electrode.
  • some areas of a conventional dam may have a less flattening phenomenon, that is, after one inkjet printing, some ink droplets may remain on the dam 6 (as exemplarily shown by reference numeral 1 in Fig. 2).
  • the residual ink droplets 1 will affect the hydrophobic properties of the dam surface, so that in the next inkjet printing process (required successive printing in a continuous printing process), the residual ink droplets 1 will attract more ink droplets. And further affecting the distribution of the printing ink on the substrate, even causing cross-coloring between pixels of different colors. This affects the lighting effect of the display panel.
  • FIG. 3 shows a schematic diagram of a substrate assembly in accordance with an embodiment of the present invention.
  • a groove 7 of a certain depth is formed in the dam 6.
  • This groove 7 can be used to collect ink droplets remaining on the surface of the bank 6 during inkjet printing, so as not to affect subsequent further inkjet printing, and to maintain the hydrophobicity of the surface of the bank 6.
  • the groove is located in the middle of the dam 6.
  • the groove 7 is preferably formed on a bank having a size of 100 ⁇ m or more in the row or column direction of the substrate.
  • the grooves 7 on the dam can collect possible ink droplets.
  • the size in the row or column direction of the substrate herein is for the portion between the two pixel regions 2 (see FIG. 2).
  • the substrate row direction is also a continuous inkjet printing direction in an inkjet printing process such that ink droplets are more easily collected by the grooves on the dam during inkjet printing.
  • the dimension of the groove 7 in the horizontal dimension of the dam away from the surface of the substrate (i.e., the upper surface) is at least 20 microns, preferably 20-100 microns.
  • the size should be the diameter of the top of the frustum.
  • the above size parameters are only a few examples, and the respective dimensions of the groove can be flexibly determined according to the amount of ink of the inkjet printing to be able to collect the ink droplets remaining on the dam.
  • the depth of the groove 7 may substantially reach the bottom of the bank 6, provided that the TFT element on the substrate and the insulating protective layer on the metal wiring are not touched.
  • the depth of the groove may be approximately half the height of the dam, as shown in FIG.
  • the cross-sectional shape of the groove is shown as an inverted trapezoid in the drawing, the groove may be manufactured to have a shape such as a cube, a cylinder, a cone or a truncated cone.
  • the opening of the groove may have an elliptical, circular or approximately rectangular shape.
  • the present invention contemplates any shape of the groove that enables collection of ink drops.
  • One or more grooves may be formed on a single dam to further improve the effect of collecting ink drops.
  • the method includes providing a substrate in advance, which may be any standard substrate for display panel fabrication, such as a material such as plastic, glass, or the like.
  • step 1 elements such as metal wiring, TFT, and electrodes are formed on the substrate. These components constitute the driving circuit of the luminescent material of the OLED, and thus are necessary components for fabricating the OLED light-emitting panel. The formation process of these elements is not the focus of the present invention, so a description thereof will be omitted herein.
  • a dam made of a hydrophobic material is formed over the substrate, and the dam surrounds the electrode exposing the pixel region.
  • the dam may be formed using a process of deposition and mask exposure, or a process using a shadow mask. In the undesired situation, the surface of the dam may have unevenness.
  • one or more grooves are formed on the upper surface of the dam.
  • the grooves are used to collect ink drops remaining on the dam during inkjet printing.
  • the groove can be exposed and developed on the dam by using a mask having an adjustable exposure amount such as a half mask.
  • a mask with an adjustable exposure can be used to adjust the depth of the groove.
  • the mask used to expose the recess can be the same mask as the mask used to form the dam, so that no additional masking is required and no additional steps are required.
  • the substrate assembly according to the invention can thus be obtained with little additional cost relative to the prior art.
  • the substrate assembly made according to the foregoing steps is not the final display device.
  • the embodiment further provides a display device comprising any of the above substrate assemblies.
  • a final display device such as an Organic Light-Emitting Diode (OLED) display, a Polymer Light-Emitting Diode (PLED) display, etc.
  • OLED Organic Light-Emitting Diode
  • PLED Polymer Light-Emitting Diode
  • the luminescent material solution is inkjet printed, followed by a drying process to leave a layer of solid luminescent material and form a pixel, and then form a corresponding driving element such as a cathode, a package, and peripheral circuit driving on the pixel.
  • the substrate assembly of the present invention is particularly suitable for continuous printing printing processes, i.e., via multiple printing cycles to effect an ink jet process for the entire panel. Finally, there is usually a step of encapsulating the formed display panel. It will be understood by those skilled in the art that although the above method recites some necessary steps, this does not mean that there may be no other between these steps.
  • the external steps may have additional steps and processes between the various steps depending on the needs of the actual product and the different processes, for example, steps between forming steps 1 and 2 may be performed to form an insulating protective layer or the like.
  • the improvement of the present invention is mainly in the improvement of the dam, and those skilled in the art can easily think of incorporating this improvement into various manufacturing processes of the prior art OLED to solve the problem of the present invention. Solve the technical problems and achieve the corresponding technical effects.
  • the present invention seeks to protect the technical solutions of various manufacturing processes using the above-mentioned improvement points.

Abstract

一种基板组件及其制备方法和显示装置，基板组件包括：基板（5）；形成在基板上的电极、金属布线（4）和TFT（3）；以及形成在基板之上的堤坝（6），堤坝包围像素区域（2）并裸露出电极；其中，堤坝上远离基板的表面上一个或多个凹槽（7），凹槽适用于收集在后续喷墨打印工艺中残留在所述堤坝上的墨滴（1）。

Description

基板组件及其制备方法以及显示装置 技术领域
本发明涉及OLED制造的技术领域，并且特别涉及适用于OLED的基板组件及其制备方法。
背景技术
有机发光二极管(OLED，或称有机电致发光)技术一直被认为是最具有竞争力的下世代发光及显示技术之一。然而，在显示器的应用方面，从1996年Pioneer发表的PLOLED显示器商品化以来，OLED显示器似乎在大型化及量产化方面遭遇极强的挑战。重大挑战主要来自两方面，第一是主动矩阵的TFT背板，另一个就是有机材料的制程及封装问题。在有机材料制程方面，主要有蒸镀制程和溶液制程。在面对大型化基板时，真空热蒸镀技术面临极大缺陷，如遮光板极易受工艺流程中的高温环境影响而发生偏移，导致难以在基板上保持均匀的沉积率。溶液制程中采用了喷墨印刷技术。而其中喷墨印刷技术可以通过液态有机材料的均匀沉积形成薄膜层，因此，这种技术理论上可以更好地解决大尺寸的问题。
喷墨印刷分为连续印刷和非连续印刷。连续印刷方式属于无光罩、无接触式的制程，优点在于逐次印刷，因为口径比较大，可以连续稳定地喷出墨水而不易堵塞喷嘴，良率高，易于大型化的同时Ink组成自由度大。但是在连续印刷的过程中，需要在一次打印循环中对其中几行像素进行墨水喷射，而在下一次打印循环中对另外几行像素进行墨水喷射，如此循环往复进行逐次打印，以实现对整个基板的喷射。
而在连续打印过程中，像素之间的堤坝(bank)上也会有墨滴滴上，而现有技术的常规堤坝在金属走线和TFT区域会有不太平整的现象，导致墨滴残留在此区域，从而改变该区域的表面疏水特性，后续再打印其他膜层时，可能会残留更多的墨水以致进一步影响像素内部的均匀性或者导致相邻像素间的串色现象。
因此需要一种解决现有技术中的上述问题的改进的技术。
发明内容
为了解决以上技术问题，本发明提供一种基板组件及其制备方法。
根据一方面，提供了一种基板组件，包括：基板；在所述基板上的电极、金属布线和TFT；以及在所述基板之上的堤坝，所述堤坝包围像素区域并裸露出所述电极；其中，所述堤坝的远离基板的表面上包括一个或多个凹槽，所述凹槽适用于收集在后续喷墨打印工艺中残留在所述堤坝上的墨滴。
根据优选实施例，所述基板组件适用于经由连续喷墨打印工艺以制成OLED显示面板。
根据优选实施例，所述堤坝由疏水性材料制成。
根据优选实施例，在所述堤坝与所述金属布线和TFT层之间还存在绝缘保护层。
根据优选实施例，所述凹槽位于在基板行或列方向上的尺寸大于等于100微米的堤坝上。
根据优选实施例，所述凹槽为截锥体结构，并且所述凹槽在所述堤坝的所述表面处的开口直径为20-100微米。
根据优选实施例，所述凹槽在所述堤坝的所述表面处的水平维度最小尺寸至少为20微米。
根据优选实施例，所述凹槽位于与所述TFT和所述金属布线对应的堤坝上。
根据另一方面，提供一种基板组件的制备方法，包括：在基板上形成金属布线、TFT和电极；在所述基板之上形成堤坝，并且所述堤坝包围像素区域并且裸露出所述电极；在所述堤坝的远离所述基板的表面上形成一个或多个凹槽，其中所述凹槽用于收集在后续喷墨打印过程中残留在所述堤坝上的墨滴。
根据优选实施例，使用曝光量可调的掩模制备所述凹槽。
根据优选实施例，所述堤坝经由涂布和掩模曝光显影工艺形成，并且利用与曝光显影形成所述堤坝所使用的同一掩模来曝光显影形成所述凹槽。
根据优选实施例，在基板的行或列方向上的尺寸大于等于100微米的堤坝上形成所述凹槽。
为了制备完整的显示面板，该方法还包括在所述基板之上喷射有机发光材料溶液以及进行干燥处理的步骤，以及还包括形成另一电极 以及进行封装的步骤。
根据另一方面，提供了一种显示装置，包括如上文所述的基板组件。
本发明的有益效果是在像素TFT和金属走线区域处的堤坝上制备凹槽，使连续打印过程中落在此区域的墨水都被收集在凹槽内，从而解决常规堤坝设计中由于墨滴残留此处导致表面疏水特性改变，进一步导致后续打印中残留更多的墨水或者进一步影响墨水在像素内部的均匀性或者导致像素间串色现象等问题。另外此凹槽的制备不需要额外增加掩模或增加工序，简单易于实现。
附图说明
包括附图以提供对实施例的进一步理解并且附图被并入本说明书中并且构成本说明书的一部分。附图图示了实施例并且与描述一起用于解释实施例的原理。将容易认识到其它实施例和实施例的很多预期优点，因为通过引用以下详细描述，它们变得被更好地理解。附图的元件不一定是相互按照比例的。同样的参考数字指代对应的类似部件。
图1图示了现有技术中的基板组件的示意图；
图2以侧截面图示出了现有技术中的基板组件的示意图；
图3示出了根据本发明的一实施例的基板组件的示意图；
图4示出了根据本发明的另一实施例的基板组件的示意图。
图5示出了根据本发明的实施例的基板组件的制备方法。
具体实施方式
在以下详细描述中，参考附图，该附图形成详细描述的一部分，并且通过其中可实践本发明的说明性具体实施例来示出。对此，参考描述的图的取向来使用方向术语，例如“顶”、“底”、“左”、“右”、“上”、“下”等。因为实施例的部件可被定位于若干不同取向中，为了图示的目的使用方向术语并且方向术语绝非限制。应当理解的是，可以利用其他实施例或可以做出逻辑改变，而不背离本发明的范围。因此以下详细描述不应当在限制的意义上被采用，并且本发明的范围由所附权利要求来限定。
此外，关于形成或定位在表面“之上”的部分、元件或材料层使 用的词语“之上”可以在本文被用于表示该部分、元件或材料层“直接在”暗示的表面上定位(例如放置、形成、沉积等)，例如与其直接接触。关于形成或定位在表面“之上”的部分、元件或材料层使用的词语“之上”可以在本文被用于表示该部分、元件或材料层被定位(例如放置、形成、沉积等)为“间接在”所暗示的表面上，而具有被布置在所暗示的表面和该部分、元件或材料层之间的一个或多个附加部分、元件或层。
应当理解的是，本文描述的各个示例性实施例的特征可以相互组合，除非特别另外指出。
图1图示了现有技术中的基板组件的示意图。该基板组件可用于制造OLED发光设备。图1示出了位于基板上的几个示例性像素区域及周边的元件。其中从图1可看出，现有技术中的基板组件包括形成于基板上的像素区域2、TFT3和金属布线4。其中在各个准矩形的像素区域2处具有电极，其一般是阳极电极(在后续工艺中，其将被喷射有有机发光材料)，该电极通常由亲水性导电材料制成，例如由铟锡氧化物(ITO)制成，或者由金属制成。而围绕在像素区域2周围的边界区域上具有薄膜晶体管(TFT)3和金属布线4以及其他必要的部件。而本领域技术人员熟知的是，在TFT3和金属布线4上一般还形成有绝缘保护层和平坦化膜，本申请省略了对这些常规部分的描述。值得注意的是，该像素区域的形状并不限于图中所示出的形状，其可以是适当的任何形状，如圆形、椭圆形等。以上这些部件均为本领域技术人员熟知的部件，并且其制备方法也是本领域熟知的工艺，而在此省去对其的具体制备方法的描述。
另外，虽然在图1中未示出，在该边界区域上形成有由疏水性材料制成的堤坝(bank)6，其也可以称为堤形物、隔壁或围堰等。该堤坝用于包围所述像素区域，以形成阱2。该阱2有利于在后续的喷墨打印过程中使墨滴积聚到该阱2中。在图2中以侧截面图示出了现有技术中的基板组件的一部分的示意图。其中对照图1中所示的俯视图示出了堤坝6和基板5的侧视截面图。该堤坝6可通过先在基板上沉积或涂布一层疏水性材料层，然后进行掩模曝光显影来形成。该堤坝6所使用的疏水性材料可以是有机含氟聚合物或者其他适合的材料。在正常的情况下，该堤坝6的表面是疏水性的，从而在后续的喷墨打印的过程中，墨滴并 不会在堤坝6上残留，而是积聚在阱2中，即电极上。然而，常规的堤坝的有些区域会有不太平整的现象，即在一次喷墨打印之后，堤坝6上有可能残留一些墨滴(如图2中的附图标记1示例性所示那样)。而该残留的墨滴1将影响了堤坝表面的疏水特性，从而在下一次的喷墨打印过程中(在连续打印工艺中需要逐次打印)，该残留的墨滴1将吸引更多的墨滴残留，并且进一步影响打印墨水在基板上的分布，甚至引起不同颜色像素之间的串色。这影响了该显示面板的发光效果。
下面结合图3-5描述根据本发明的实施例。
图3示出了根据本发明的一实施例的基板组件的示意图。在图3中可看出，在堤坝6中形成了一定深度的凹槽7。该凹槽7可用于收集在喷墨打印过程中残留在堤坝6的表面上的墨滴，从而不影响后续进一步的喷墨打印，并且保持堤坝6的表面的疏水性。优选地，该凹槽位于堤坝6的中间。并且因为墨滴相对不容易残留在宽度小于100微米的堤坝上，所以该凹槽7优选在基板行或列方向上的尺寸大于等于100微米的堤坝上形成。如此当喷墨打印路径经过该堤坝上方时，该堤坝上的凹槽7便可以收集可能的墨滴残留。需要说明的是这里的基板行或列方向上的尺寸是针对两个像素区域2之间的部分而言的(参见图2)。一种实施方式中，该基板行方向同样也是喷墨打印工艺中的连续喷墨打印方向，如此在进行喷墨打印的过程中，墨滴更易被该堤坝上的凹槽收集。在优选的实施例中，该凹槽7在堤坝的远离基板的表面(即上表面)处的水平维度的尺寸(如附图标记L所指示的)至少为20微米，优选为20-100微米(在凹槽7的形状为截锥体的情况下，该尺寸应为截锥体的顶的直径)。当然，以上尺寸参数仅为一些示例，该凹槽的各个尺寸可以根据的喷墨打印的墨水量来灵活确定，以能够收集残留在堤坝上的墨滴为准。
另外，该凹槽7的深度可以基本上达到堤坝6的底部，条件是不触及基板上的TFT元件和金属布线上的绝缘保护层。在根据本发明的另一实施例中，该凹槽的深度可以大致为堤坝的高度的一半，如图4中所示的那样。尽管在图中示出了凹槽的截面形状为倒梯形，但是该凹槽可以被制造为具有立方体、圆柱体、圆锥体或截锥体等形状。而在堤坝的上表面处，该凹槽的开口可以具有椭圆、圆形或近似长方形的形状。本发明设想到了任何能够实现收集墨滴的凹槽形状。另外，根据需要， 在单个堤坝上可以形成一个或多个凹槽，以进一步改进收集墨滴的效果。
下面参考图5来描述根据本发明的基板组件的制备方法。该方法包括预先提供基板，该基板可以是用于显示面板制作的任何标准基板，例如由塑料、玻璃等材料制成。
在步骤1，在基板上形成金属布线、TFT和电极等元件。这些元件构成了OLED的发光材料的驱动电路，因此是制作OLED发光面板所必需的元件。这些元件的形成工艺并不是本发明的重点所在，所以在此省略对其的描述。
在步骤2，在所述基板之上形成由疏水性材料制成的堤坝，并且所述堤坝包围裸露出像素区域的所述电极。该堤坝可以使用沉积以及掩模曝光的工艺形成，或采用阴影掩模的工艺形成。而在非期望的情况下，该堤坝的表面可能存在不平整的现象。
在步骤3，在所述堤坝的上表面上形成一个或多个凹槽。所述凹槽用于收集在喷墨打印过程中残留在所述堤坝上的墨滴。在制备方式方面，可以利用曝光量可调的掩模(如半掩模half-mask)在堤坝上曝光显影出该凹槽。其中可利用曝光量可调的掩模来调节凹槽的深度。根据优选的实施例，曝光该凹槽所使用的掩模可以与形成堤坝所使用的掩模为同一掩模，从而不需要额外增加掩模并且也不需要增加工序。因而可以相对于现有技术，以很小的附加成本获得根据本发明的基板组件。
当然，根据前述步骤制成的基板组件并不是最终的显示装置。本实施例还提供了一种显示装置，包括上述任一项基板组件。为了制成最终的显示装置，例如有机电致发光(Organic Light-Emitting Diode，OLED)显示器，高分子发光二极管(Polymer Light-Emitting Diode，PLED)显示器等，还需要具有对所述基板组件进行例如喷墨打印发光材料溶液，随后进行干燥处理，以留下固体发光材料层并且形成像素，然后在像素上形成相应的阴极等必要的驱动元件，封装以及周边电路驱动等步骤。而本发明的基板组件尤其适合于连续打印的打印工艺，即经由多个打印循环以实现对整个面板的喷墨过程。最后通常会有对形成的显示面板进行封装的步骤。本领域技术人员理解的是，尽管上述方法记载了一些必要的步骤，但是这不代表这些步骤之间不可以具有另 外的步骤，相反根据实际产品的需要和不同工艺，各个步骤之间可以存在另外的步骤和工序，例如在步骤1和2之间可以具有形成绝缘保护层等的步骤。
另外，值得注意的是，本发明的改进点主要在于对堤坝的改进，而本领域技术人员可以容易想到将这一改进结合到现有技术的OLED的各种制作工艺中，以解决本发明要解决的技术问题，并且达到相应技术效果。而本发明寻求保护采用了上述改进点的各种制作工艺的技术方案。
以上描述了本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。
在本申请的描述中，需要理解的是，术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。尽管在方法权利要求中以一定顺序列出了各个步骤，但是这些步骤并不一定以所列出的步骤来执行，相反在不背离本发明的精神和主旨的情况下可以以相反或并行的方式执行。措词‘包括’并不排除在权利要求未列出的元件或步骤的存在。元件前面的措词‘一’或‘一个’并不排除多个这样的元件的存在。在相互不同从属权利要求中记载某些措施的简单事实不表明这些措施的组合不能被用于改进。在权利要求中的任何参考符号不应当被解释为限制范围。

Claims (15)

  1. 一种基板组件，包括：
    基板；
    在所述基板上的电极、金属布线和TFT；以及
    在所述基板之上的堤坝，所述堤坝包围像素区域并裸露出所述电极；
    其中，所述堤坝的远离基板的表面上包括一个或多个凹槽，所述凹槽适用于收集在后续喷墨打印工艺中残留在所述堤坝上的墨滴。
  2. 根据权利要求1所述的基板组件，其中所述基板组件适用于经由连续喷墨打印工艺以制成OLED显示面板。
  3. 根据权利要求1所述的基板组件，其中所述堤坝由疏水性材料制成。
  4. 根据权利要求1所述的基板组件，其中在所述堤坝与所述金属布线和TFT层之间还存在绝缘保护层。
  5. 根据权利要求1所述的基板组件，其中所述凹槽位于在基板的行或列方向上的尺寸大于等于100微米的堤坝上。
  6. 根据权利要求1所述的基板组件，其中所述凹槽为截锥体结构，并且所述凹槽在所述堤坝的所述表面处的开口直径为20-100微米。
  7. 根据权利要求1所述的基板组件，其中所述凹槽在所述堤坝的所述表面处的水平维度最小尺寸至少为20微米。
  8. 根据权利要求1所述的基板组件，其中所述凹槽位于与所述TFT和所述金属布线对应的堤坝上。
  9. 一种基板组件的制备方法，包括：
    在基板上形成金属布线、TFT和电极；
    在所述基板之上形成堤坝，并且所述堤坝包围像素区域并且裸露出所述电极；
    在所述堤坝的远离所述基板的表面上形成一个或多个凹槽，其中所述凹槽用于收集在后续喷墨打印过程中残留在所述堤坝上的墨滴。
  10. 根据权利要求9所述的制备方法，其中使用曝光量可调的掩模制备所述凹槽。
  11. 根据权利要求9所述的制备方法，其中所述堤坝经由涂布和掩 模曝光显影工艺形成，并且利用与曝光显影形成所述堤坝所使用的同一掩模来曝光显影形成所述凹槽。
  12. 根据权利要求9所述的制备方法，其中在基板行或列方向上的尺寸大于等于100微米的堤坝上形成所述凹槽。
  13. 根据权利要求9所述的制备方法，其中还包括在所述基板之上连续喷射有机发光材料溶液以及进行干燥处理的步骤。
  14. 根据权利要求13所述的制备方法，其中还包括形成另一电极以及进行封装的步骤。
  15. 一种显示装置，包括如权利要求1到8中任一项所述的基板组件。
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