WO2017018596A1 - Puce optique intégrée à base de circuit optique planaire - Google Patents

Puce optique intégrée à base de circuit optique planaire Download PDF

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Publication number
WO2017018596A1
WO2017018596A1 PCT/KR2015/010527 KR2015010527W WO2017018596A1 WO 2017018596 A1 WO2017018596 A1 WO 2017018596A1 KR 2015010527 W KR2015010527 W KR 2015010527W WO 2017018596 A1 WO2017018596 A1 WO 2017018596A1
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WIPO (PCT)
Prior art keywords
optical
layer
core layer
optical chip
chip
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Application number
PCT/KR2015/010527
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English (en)
Korean (ko)
Inventor
김정원
김철
Original Assignee
한국과학기술원
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Priority claimed from KR1020150136577A external-priority patent/KR101788400B1/ko
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to US15/746,184 priority Critical patent/US10139562B2/en
Publication of WO2017018596A1 publication Critical patent/WO2017018596A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12126—Light absorber
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12159—Interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching

Definitions

  • It relates to integrated optical chips based on planar lightwave circuits, and more particularly to the integration of a plurality of optical components into one optical chip for mass production, for example by a dicing process.
  • Femtosecond laser technology has a relatively short history of commercialization and industrial use, and many research institutes around the world are actively researching femtosecond lasers and related applications.
  • Typical examples of femtosecond laser-based systems being used in industrial applications include fine precision machining, glass welding, direct laser writing, nanoparticle generation, lasers for medical procedures, and bio-imaging using nonlinear optical phenomena. There is this.
  • femtosecond lasers and other femtosecond lasers have femtosecond lasers because of their sub-picosecond pulse width, high peak power, wide light spectrum, low phase noise and low timing noise.
  • Related applications continue to expand.
  • an integrated optical chip is formed on a substrate, a plurality of optical components based on a planar lightwave circuit formed on one surface of the substrate, and formed on the one surface of the substrate, the plurality of optical components to each other It comprises a plurality of optical waveguides (connecting).
  • the plurality of optical components includes a saturable absorber having nonlinear loss characteristics.
  • the saturable absorber is formed on a core layer formed on the one surface of the substrate, an overcladding layer surrounding at least a portion of the core layer, and formed on at least a portion of the overcladding layer to guide at least a portion of the core layer. It may include a saturated absorbing layer disposed to interact with the attenuation field of the light.
  • the saturated absorber layer may include at least one of a carbon nanostructure or a topological insulator.
  • the plurality of optical components includes a wavelength division multiplexer.
  • the wavelength division multiplexer may include a core layer formed on the one surface of the substrate and including a plurality of separated optical waveguides, and an overcladding layer surrounding at least a portion of the core layer.
  • the plurality of optical components includes an output coupler.
  • the output coupler may include a core layer formed on the one surface of the substrate and including a plurality of separated optical waveguides, and an overcladding layer surrounding at least a portion of the core layer.
  • the substrate comprises a material having a lower refractive index than the plurality of optical waveguides.
  • the substrate further comprises an undercladding layer interposed between the substrate and the plurality of optical waveguides, wherein the undercladding layer includes a material having a lower refractive index than the plurality of optical waveguides.
  • the plurality of optical components and the plurality of optical waveguides are formed using at least one of a deposition process, a photolithography process, an etching process and an ion exchange process.
  • a pulsed laser device is formed on a substrate, a plurality of optical components based on a planar lightwave circuit formed on one surface of the substrate, and formed on the one surface of the substrate,
  • An integrated optical chip comprising a plurality of optical waveguides connected to each other, and at least one optical fiber array block connecting the optical waveguides of at least one end of the integrated optical chip and a core of the at least one optical fiber block; FAB).
  • a pulsed laser device is formed on a substrate, a plurality of optical components based on a planar lightwave circuit formed on one surface of the substrate, and formed on the one surface of the substrate, An integrated optical chip comprising a plurality of optical waveguides connected to each other, a first optical chip comprising a pumping light source module, and a second optical chip comprising a gain medium, the first optical chip comprising: An end is coupled with the first optical chip and the second end of the integrated optical chip is coupled with the second optical chip.
  • an integrated optical chip manufacturing method includes providing a wafer, forming an optical waveguide on the wafer, forming an overcladding layer on the wafer and the optical waveguide, and at least a portion of the overcladding layer. Removing a portion, and forming a saturated absorbing layer having a nonlinear loss characteristic on the overcladding layer, the saturated absorbing layer disposed to interact with an attenuation field of light guiding at least a portion of the optical waveguide.
  • the forming of the optical waveguide may include forming a core layer on the wafer, and forming an optical waveguide extending with a rectangular cross section by removing at least a portion of the core layer. Include.
  • the method of manufacturing an integrated optical chip further includes forming a mask layer on the core layer, and removing at least a portion of the mask layer using a photolithography process. In one embodiment, the method of manufacturing an integrated optical chip further includes cutting the wafer to separate the plurality of integrated optical chips.
  • the saturable absorber layer comprises at least one of carbon nanostructures or topological insulators.
  • the wafer comprises a material having a lower refractive index than the optical waveguide.
  • the method may further include forming an undercladding layer on the wafer, the undercladding layer including a material having a lower refractive index than the plurality of optical waveguides, and forming the core layer on the undercladding layer. Forming a core layer.
  • FIG. 1 is a block diagram illustrating a portion of a femtosecond laser according to one embodiment.
  • FIG. 2 is a block diagram illustrating a portion of a femtosecond laser according to one embodiment.
  • FIG. 3 is a block diagram illustrating a portion of a femtosecond laser according to one embodiment.
  • 4A is a graph illustrating an output of a femtosecond laser in a time domain according to an embodiment.
  • 4B is a graph illustrating an output of a femtosecond laser in a frequency domain according to an embodiment.
  • 4C is a graph illustrating the characteristics of a saturated absorber according to an embodiment.
  • 5A and 5B are block diagrams illustrating a portion of a femtosecond laser according to one embodiment.
  • 6A through 6D are plan and perspective views illustrating an integrated optical chip according to an embodiment.
  • FIG. 7 illustrates a production process of an integrated optical chip, according to one embodiment.
  • 8A-8M illustrate a production process of an integrated optical chip, according to one embodiment.
  • the femtosecond laser includes a pump light source 110, a wavelength division multiplexer 120, a gain medium 130, an optical isolator 140, and saturation. It may include a absorber (saturable absorber) 150, and an output coupler (160).
  • a femtosecond laser is an optical pulse train pulse train that uses an optical cavity with gain and saturation absorption functions, which is different from the conventional continuous wave lasers.
  • FIG. 4A the output of a femtosecond laser in accordance with one embodiment is shown in the time domain.
  • a femtosecond laser can generate a light pulse train with a constant pulse width 410 and a constant period 420.
  • 4B the output of a femtosecond laser according to one embodiment is shown in the frequency domain.
  • mode-locking may be implemented in which multiple frequency modes are oscillated simultaneously.
  • the wavelength division multiplexer 120, the gain medium 130, the light shield 140, the saturable absorber 150, and the output coupler 160 form part of the optical resonator of the femtosecond laser. can do.
  • the optical resonator may comprise a ring-type resonator.
  • the pump light source 110 of the femtosecond laser may provide pump light input into the optical resonator.
  • the pump light source 110 may include a laser diode.
  • Pump light provided by the pump light source 110 may be input to the optical resonator through the wavelength division multiplexer 120.
  • the wavelength division multiplexer 120 of the femtosecond laser may perform a function of guiding light of a specific wavelength in a desired path.
  • the wavelength division multiplexer 120 may guide the light of the pump light source such that the light input from the pump light source 110 is input to the gain medium 130 in the optical resonator.
  • the wavelength division multiplexer 120 may guide the signal light so that the signal light output from the gain medium 130 does not leave the optical resonator when passing through the wavelength division multiplexer 120.
  • the wavelength division multiplexer 120 may be implemented in the form of a directional coupler or a multimode interference coupler. Connection paths and implementations of the wavelength division multiplexer 120 may be selected to be suitable according to design needs in addition to those illustrated herein.
  • the femtosecond laser may implement the gain inside the optical resonator using the gain medium 130.
  • gain medium 130 may comprise an erbium (Er) doped medium or a ytterbium (Yb) doped medium.
  • the gain medium 130 may be implemented in the form of an optical fiber or a chip. Materials included in the gain medium 130 and implementations of the gain medium 130 may be selected to be suitable according to design needs in addition to those shown herein by way of example.
  • the femtosecond laser may induce a unidirectional resonance of light using the light shield 140.
  • the femtosecond laser may implement a saturation absorption function in the optical resonator using the saturable absorber 150 having nonlinear loss characteristics.
  • the nonlinear loss characteristic refers to a characteristic in which the loss ratio experienced by light decreases as the intensity of incident light increases.
  • 4C is a graph illustrating exemplary nonlinear loss characteristics.
  • the saturable absorber 150 may include carbon nanostructures or topological insulators having nonlinear loss characteristics. Materials and implementations included in the saturable absorber 150 may be selected to be suitable according to design needs in addition to those shown herein by way of example.
  • the femtosecond laser may output the mode locked optical pulse train generated by the optical resonator through the output coupler 160.
  • output coupler 160 may include a 10:90 optical coupler that outputs 10% of the light.
  • the output coupler 160 may be implemented in the form of a directional coupler, a multimode interference coupler, a Y-branch, or a loop mirror. The output ratio and implementation of the output coupler 160 may be selected to be suitable according to design needs in addition to the examples presented herein.
  • a femtosecond laser includes a pump light source 210, a wavelength division multiplexer 220, a gain medium 230, reflective mirrors 240, 270, an output coupler 250, and a saturable absorber 260. can do.
  • the pump light source 210, the wavelength division multiplexer 220, the gain medium 230, the reflection mirrors 240 and 270, the output coupler 250, and the saturable absorber 260 form part of the optical resonator of the femtosecond laser. can do.
  • the optical resonator may comprise a linear-type resonator.
  • the reflection mirrors 240 and 270 of the femtosecond laser may perform a function of reflecting all or part of incident light.
  • the femtosecond laser may select a resonator mode of a specific wavelength by interference of light inside the optical resonator using the reflection mirrors 240 and 270.
  • the femtosecond laser may include a pump light source 310, a wavelength division multiplexer 320, a gain medium 330, output couplers 340 and 350, and a light shield 360.
  • the pump light source 310, the wavelength division multiplexer 320, the gain medium 330, the output couplers 340 and 350, and the light shield 360 may form part of an optical resonator of a femtosecond laser.
  • the optical resonator may comprise a figure of 8 type resonator.
  • a femtosecond laser includes a plurality of optical components, and in addition to the types described above, there may be resonators having various types of structures.
  • resonators having various types of structures.
  • it may be disadvantageous in terms of the volume of the femtosecond laser and the complexity of the production process.
  • the femtosecond laser may include a pump light source 510, an integrated optical chip 520, a gain medium 530, and a light shield 540.
  • the femtosecond laser may include a pump light source 510, an integrated optical chip 520, a gain medium 530, and a reflective mirror 550.
  • the femtosecond laser of FIGS. 5A and 5B includes an integrated optical chip 520 formed by a plurality of optical components integrated in one chip.
  • a plurality of optical components based on planar lightwave circuits may be integrated within the integrated optical chip 520.
  • the plurality of optical components may include at least one of a wavelength division multiplexer, a saturated absorber, and an output coupler. That is, some of the wavelength division multiplexer, the saturable absorber, and the output coupler may be integrated into the integrated optical chip 520, and other optical components may be integrated into the integrated optical chip 520.
  • the integrated optical chip 520 may include a plurality of optical waveguides connecting the plurality of optical components to each other.
  • the production process can be greatly simplified since there is no need to connect the plurality of optical components to each other by fusion splicing or butt-coupling. .
  • the length of the optical fiber used can be reduced and the laser volume can be reduced compared to the case of using individual optical components.
  • the integrated optical chip 600 may include a plurality of optical components based on a planar lightwave circuit and a plurality of optical waveguides connecting the plurality of optical components to each other.
  • the plurality of optical components may include a wavelength division multiplexer 610, a saturated absorber 620, and an output coupler 630.
  • the wavelength division multiplexer 610 may include a plurality of separate optical waveguides extending in the same direction at regular intervals.
  • the plurality of separate optical waveguides may be formed as part of a core layer having a refractive index suitable for causing total reflection.
  • the wavelength division multiplexer 610 may include an overcladding layer surrounding at least a portion of the plurality of separate optical waveguides.
  • the wavelength division multiplexer 610 may be implemented in different forms at different positions than the illustrated example, and is not limited by the illustrated example.
  • the saturable absorber 620 may include an optical waveguide and a saturated absorbing layer that interacts with the attenuation field of light guiding at least a portion of the optical waveguide.
  • the optical waveguide may be formed as part of a core layer having a refractive index suitable for causing total reflection.
  • the saturated absorber layer may comprise carbon nanostructures or topological insulators having nonlinear loss characteristics.
  • the carbon nanostructures can include graphene or carbon nanotubes
  • the topological insulator can include one of Bi 2 Se 3 , Bi 2 Te 3, and Sb 2 Te 3 .
  • the saturated absorber 620 may include an overcladding layer surrounding at least a portion of the optical waveguide.
  • the saturable absorber 620 may be implemented in different forms at different positions than the illustrated example, and is not limited by the illustrated example.
  • the output coupler 630 may include a plurality of separate optical waveguides extending in the same direction at regular intervals.
  • the plurality of separate optical waveguides may be formed as part of a core layer having a refractive index suitable for causing total reflection.
  • the output coupler 630 may include an overcladding layer surrounding at least a portion of the plurality of separate optical waveguides.
  • the output coupler 630 may be implemented in different forms at different locations than the illustrated example, and is not limited by the illustrated example.
  • the plurality of optical waveguides 640 may connect a plurality of optical components (eg, wavelength division multiplexer 610, saturated absorber 620, and output coupler 630) to one another.
  • the plurality of optical waveguides 640 may connect between the plurality of optical components and at least one end of the integrated optical chip 600.
  • the plurality of optical waveguides 640 may be formed to have a rectangular cross section.
  • the plurality of optical waveguides 640 may be formed as part of a core layer having a refractive index suitable for causing total reflection.
  • the integrated optical chip 600 may be combined with one or more fiber array block (FAB) 650.
  • FAB fiber array block
  • both ends of the integrated optical chip 600 may be combined with the optical fiber array block 650.
  • the optical fiber array block 650 connects the optical waveguide 640 in the integrated optical chip 600 with the cores of one or more optical fibers 660.
  • the integrated optical chip 600 may be connected to an external optical component through the optical fiber array block 650.
  • the integrated optical chip 600 may include a substrate 601, an overcladding layer 602 formed on at least a portion of the substrate, and a saturated absorbing layer 603 formed on at least a portion of the over cladding layer. .
  • the integrated optical chip 600 may include a core layer formed on at least a portion of the substrate.
  • the core layer may constitute at least a portion of the wavelength division multiplexer 610, the saturable absorber 620, the output coupler 630, and the plurality of optical waveguides 640.
  • the core layer includes a material having a higher refractive index than the substrate 601 and the overcladding layer 602 to be suitable for causing total reflection.
  • the integrated optical chip 600 may further include an undercladding layer (not shown) formed between the substrate 670 and the core layer.
  • an undercladding layer having a lower refractive index than the core layer is formed between the substrate and the core layer so that the optical waveguide formed as part of the core layer causes total reflection.
  • An undercladding layer may be interposed therebetween.
  • FIG. 6C is a perspective view illustrating an integrated optical chip 600 according to an embodiment.
  • integrated optical chip 600 may be combined with one or more optical chips 670, 680.
  • both ends of the integrated optical chip 600 may include a first optical chip 670 including a pumping light source module 672 and a second optical chip 680 including an optical waveguide based gain medium 682.
  • the integrated optical chip 600 and one or more optical chips 670, 680 may be coupled via UV curing.
  • the integrated optical chip 600 may be connected to an external optical component through one or more optical chips 670 and 680.
  • FIG. 6D is a perspective view illustrating an integrated optical chip 600 according to an embodiment.
  • the integrated optical chip 600 may be combined with one or more optical fiber array blocks 650 and one or more optical chips 670.
  • both ends of the integrated optical chip 600 may be combined with an optical chip 670 that includes an optical fiber array block 650 and a pumping light source module.
  • the optical fiber array block 650 connects the optical waveguide in the integrated optical chip 600 with the cores of one or more optical fibers 660.
  • the integrated optical chip 600 may be connected to an external optical component through the optical fiber array block 650 and the optical chip.
  • FIG. 7 illustrates a production process of an integrated optical chip, according to one embodiment.
  • the process of fabricating the plurality of integrated optical chips 710 on the wafer 700 may include, for example, at least one of a deposition process, a photolithography process, an etching process, and an ion exchange process.
  • FIG. 8A-8J illustrate a production process of an integrated optical chip, according to one embodiment.
  • the core layer 820 may be deposited using chemical vapor deposition (CVD).
  • the wafer 810 may include silicon (Si) or silica (SiO 2 ), and the core layer 820 may include a material having a higher refractive index than the wafer 810.
  • the 8B illustrates a step in which a mask layer 830 is formed on the core layer 820.
  • the mask layer 830 may be deposited using sputtering.
  • the mask layer 830 may include chromium (Cr).
  • the photoresist layer 840 may be coated using spincoating.
  • the 8D illustrates a step in which a pattern is formed in the photoresist layer 840.
  • the pattern may be formed by exposure using a mask aligner.
  • FIG. 8E illustrates a step in which at least a portion of mask layer 830 has been removed.
  • the mask layer 830 may be etched using an etchant corresponding to the mask layer 830.
  • FIG. 8F illustrates the step where photoresist layer 840 has been removed.
  • the photoresist layer 840 may be removed using a photoresist stripper corresponding to the photoresist layer 840.
  • FIG. 8G illustrates a step in which a portion of core layer 820 has been removed.
  • the core layer 820 may be etched using inductively coupled plasma.
  • the mask layer 830 may be etched using a corrosion solution corresponding to the mask layer 830.
  • an overcladding layer 850 is formed on the wafer 810 and the core layer 820.
  • the overcladding layer 850 may be deposited using chemical vapor deposition.
  • a structure in which a saturated absorbent layer 860 is formed on the core layer 820 and the overcladding layer 850 after at least a portion of the overcladding layer 850 is selectively removed is illustrated.
  • the portion from which the overcladding layer 850 has been selectively removed may be part of the saturable absorber in the integrated optical chip.
  • removal of the overcladding layer 850 and formation of the saturated absorbing layer 860 are arranged such that the saturated absorbing layer 860 can interact with the attenuation field of light guiding at least a portion of the core layer 820.
  • an overcladding layer 850 and a saturated absorbing layer 860 are shown, which are implemented in various forms, respectively, according to one embodiment. Similar to the structure of FIG. 8J, the overcladding layer 850 and the saturated absorbing layer 860 are arranged such that the saturated absorbing layer 860 can interact with the attenuation field of light guiding at least a portion of the core layer 820.
  • the overcladding layer 850 and the saturated absorbent layer 860 may be implemented in different forms at different locations than the illustrated example, and are not limited by the illustrated example.
  • an integrated optical chip can be fabricated on a wafer using a deposition process, a photolithography process, an etching process, or the like.
  • a deposition process a photolithography process, an etching process, or the like.
  • a large number of integrated optical chips can be produced at one time through a dicing process. Therefore, compared to the conventional femtosecond laser production process, it is possible to obtain significantly improved productivity in terms of time and cost.
  • the embodiments have been described with reference to a femtosecond laser when the width of the mode locked pulse is in femtosecond units (ie, less than 1 picosecond), the advantages of the described embodiments have arbitrary pulse widths in addition to the femtosecond laser. Applicable to pulsed lasers. That is, the pulse width can be increased or decreased by adjusting the performance of the integrated optical chip as needed. Therefore, the advantages with embodiments should not be construed as being limited to femtosecond lasers.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne, dans un mode de réalisation, une puce optique intégrée comprenant : un substrat ; une pluralité de composants optiques à base de circuit optique planaire qui sont formés sur une surface du substrat ; et une pluralité de guides d'ondes optiques qui sont formés sur la surface du substrat et qui connectent la pluralité de composants optiques les uns aux autres. Dans le mode de réalisation, la pluralité de composants optiques comprennent un absorbeur saturable ayant des caractéristiques de perte non linéaires. L'absorbeur saturable peut comprendre : une couche d'âme qui est formée sur la surface du substrat ; une couche de surgainage qui s'enveloppe autour d'au moins une partie de la couche d'âme ; et une couche d'absorption saturable qui est formée sur au moins une partie de la couche de surgainage et qui est agencée de manière à interagir avec un champ évanescent de la lumière guidée à travers au moins une partie de la couche d'âme.
PCT/KR2015/010527 2015-07-24 2015-10-06 Puce optique intégrée à base de circuit optique planaire WO2017018596A1 (fr)

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US15/746,184 US10139562B2 (en) 2015-07-24 2015-10-06 Planar lightwave circuit-based integrated optical chip

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KR10-2015-0105081 2015-07-24
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KR1020150136577A KR101788400B1 (ko) 2015-07-24 2015-09-25 평면형 광파 회로 기반의 집적 광학 칩

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107230927A (zh) * 2017-06-29 2017-10-03 中国计量大学 基于SMF‑SIMF‑GIMF‑SMF光纤结构的2μm锁模光纤激光器

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