WO2017012733A1 - Verfahren zum schmelzen von festem silizium - Google Patents

Verfahren zum schmelzen von festem silizium Download PDF

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Publication number
WO2017012733A1
WO2017012733A1 PCT/EP2016/061025 EP2016061025W WO2017012733A1 WO 2017012733 A1 WO2017012733 A1 WO 2017012733A1 EP 2016061025 W EP2016061025 W EP 2016061025W WO 2017012733 A1 WO2017012733 A1 WO 2017012733A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
solid silicon
silicon
melting
upper opening
Prior art date
Application number
PCT/EP2016/061025
Other languages
German (de)
English (en)
French (fr)
Inventor
Quoc Thai Do
Thomas Buschhardt
Dirk Zemke
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Priority to CN201680041964.8A priority Critical patent/CN107923064A/zh
Publication of WO2017012733A1 publication Critical patent/WO2017012733A1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
PCT/EP2016/061025 2015-07-17 2016-05-17 Verfahren zum schmelzen von festem silizium WO2017012733A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201680041964.8A CN107923064A (zh) 2015-07-17 2016-05-17 用于熔融固体硅的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015213474.1A DE102015213474A1 (de) 2015-07-17 2015-07-17 Verfahren zum Schmelzen von festem Silizium
DE102015213474.1 2015-07-17

Publications (1)

Publication Number Publication Date
WO2017012733A1 true WO2017012733A1 (de) 2017-01-26

Family

ID=54053857

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/061025 WO2017012733A1 (de) 2015-07-17 2016-05-17 Verfahren zum schmelzen von festem silizium

Country Status (4)

Country Link
CN (1) CN107923064A (zh)
DE (1) DE102015213474A1 (zh)
TW (1) TWI600807B (zh)
WO (1) WO2017012733A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022049034A1 (en) * 2020-09-01 2022-03-10 Globalwafers Co., Ltd. Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106546B (zh) * 2019-05-24 2021-04-27 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN113862772A (zh) * 2021-09-27 2021-12-31 云南北方光学科技有限公司 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
JP2012091942A (ja) * 2010-10-22 2012-05-17 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
WO2014051539A1 (en) 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Method for preparing molten silicon melt using high pressure meltdown
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
EP2893057B1 (en) * 2012-09-10 2017-12-20 Gtat Ip Holding Llc Continuous czochralski method and apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
JP2012091942A (ja) * 2010-10-22 2012-05-17 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
WO2014051539A1 (en) 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Method for preparing molten silicon melt using high pressure meltdown
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
US20150284876A1 (en) * 2014-04-03 2015-10-08 Globalwafers Co., Ltd. Crystal growth apparatus and thermal insulation cover of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022049034A1 (en) * 2020-09-01 2022-03-10 Globalwafers Co., Ltd. Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly

Also Published As

Publication number Publication date
CN107923064A (zh) 2018-04-17
TWI600807B (zh) 2017-10-01
TW201704558A (zh) 2017-02-01
DE102015213474A1 (de) 2015-09-24

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