WO2017012733A1 - Procédé pour fondre du silicium solide - Google Patents

Procédé pour fondre du silicium solide Download PDF

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Publication number
WO2017012733A1
WO2017012733A1 PCT/EP2016/061025 EP2016061025W WO2017012733A1 WO 2017012733 A1 WO2017012733 A1 WO 2017012733A1 EP 2016061025 W EP2016061025 W EP 2016061025W WO 2017012733 A1 WO2017012733 A1 WO 2017012733A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
solid silicon
silicon
melting
upper opening
Prior art date
Application number
PCT/EP2016/061025
Other languages
German (de)
English (en)
Inventor
Quoc Thai Do
Thomas Buschhardt
Dirk Zemke
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Priority to CN201680041964.8A priority Critical patent/CN107923064A/zh
Publication of WO2017012733A1 publication Critical patent/WO2017012733A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the invention relates to a method for melting solid silicon for the purpose of providing a melt for the production of a single crystal of silicon according to the CZ method.
  • the CZ method is a crystal growth method using a crucible containing the melt, which is called a
  • Seed crystal to which the single crystal can grow, is brought into contact with the melt.
  • the diameter of the cross-sectional area is usually greater, the larger the volume of the melt, which is to contain the crucible and depending on the diameter of the single crystal.
  • Solid silicon with which the crucible is loaded, is usually polycrystalline. Regardless, the crucible can also be loaded with monocrystalline silicon, for example, with constituents of single crystals used for the production of
  • Polycrystalline silicon, in short polysilicon, is in particular in the form of chunks
  • gases such as hydrogen and chlorine
  • Melting can, for example, on a heat shield, the one growing monocrystal before laterally einstrahlender
  • the object of the present invention is to reliably reduce such problems.
  • the object is achieved by a method for melting solid silicon, comprising
  • the inventors have investigated the situation of melting granular polysilicon in the crucible and suggest that larger temperature differences in the melt and a native
  • Oxide layer surrounding granular polysilicon play a role.
  • the oxide layer has a heat-insulating effect, which is why
  • Grainy polysilicon can easily overheat, which is favored by the temperature differences in the melt.
  • the overheated state results in spontaneous melting of granular polysilicon, resulting in the sudden release of gases.
  • the upper opening of the crucible is covered with a lid, which is an obstacle to thermal radiation. After the solid silicon has melted, the lid is removed to access the
  • the lid is disposed over the solid silicon and
  • the lid preferably extends radially outwardly from an axis passing through the center of the crucible.
  • the lid covers the upper opening of the crucible over an area which is preferably not less than 35% of the cross-sectional area of the corresponds to the upper opening of the crucible.
  • the diameter of the lid is preferably not less than 85% of the inner diameter of the heat shield at its lower end, and is smaller than this inner diameter
  • the lid is preferably placed at a height above the crucible, with the height difference between the height of the lid and the height of the upper edge of the crucible being preferably greater than or equal to zero.
  • the shortest distance of the lid to the solid silicon is preferably not more than 150 mm.
  • the solid silicon with which the crucible is loaded comprises a proportion of granular polycrystalline silicon.
  • Weight fraction is preferably not less than 10%.
  • the solid silicon in the crucible can also be completely granular
  • the solid silicon with which the crucible is loaded consists of a mixture of chunks of silicon and granular polysilicon.
  • Atmosphere in the course of melting the solid silicon from an initial pressure to a final pressure is increased.
  • the increase of the pressure is preferably linear at unchanged
  • the initial pressure is preferably in a range of 1 kPa to 1.5 kPa
  • the final pressure is preferably in a range of 5 kPa to 6 kPa.
  • Fig.l shows a side view of the vertical section through a device for pulling a single crystal of silicon according to the CZ method before the melting of solid silicon in the crucible. Only features are shown, the explanation of the
  • the device comprises a
  • Reactor housing 1 with a gas inlet 2 and a gas outlet 3.
  • the atmosphere in the reactor housing 1 consists essentially of argon, which is introduced through the gas inlet 2 into the reactor housing 1 and discharged through the gas outlet 3 from the reactor housing 1.
  • the crucible 4 made of quartz rests, supported by a support crucible 5, on a liftable and rotatable shaft 6.
  • the crucible 4 is made of solid silicon in the form of
  • the apparatus shown includes two heaters, a side heater 9, and a bottom heater 10 that provide heat energy needed to melt the solid silicon.
  • the crucible 4 has a, from an upper edge eleventh
  • a heat shield 13 is arranged, which the later growing single crystal against
  • the heat shield 13 surrounds an axis extending in extension of the axis of rotation of the shaft 6 through the center of the crucible 4.
  • FIG. 2 shows the course of the temperature at the surface of the melt after the melting of the solid silicon in the event that during the melting of the solid silicon thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Procédé pour fondre du silicium solide, qui consiste à charger un creuset en silicium solide, au moins une partie de ce silicium étant du silicium polycristallin en grains ; à chauffer le creuset pour fondre le silicium solide contenu dans le creuset ; à empêcher la dissipation de rayonnement thermique par une ouverture supérieure du creuset pendant la fonte du silicium solide ; et à faciliter la dissipation du rayonnement thermique par l'ouverture supérieure du creuset une fois le silicium solide fondu.
PCT/EP2016/061025 2015-07-17 2016-05-17 Procédé pour fondre du silicium solide WO2017012733A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201680041964.8A CN107923064A (zh) 2015-07-17 2016-05-17 用于熔融固体硅的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015213474.1A DE102015213474A1 (de) 2015-07-17 2015-07-17 Verfahren zum Schmelzen von festem Silizium
DE102015213474.1 2015-07-17

Publications (1)

Publication Number Publication Date
WO2017012733A1 true WO2017012733A1 (fr) 2017-01-26

Family

ID=54053857

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/061025 WO2017012733A1 (fr) 2015-07-17 2016-05-17 Procédé pour fondre du silicium solide

Country Status (4)

Country Link
CN (1) CN107923064A (fr)
DE (1) DE102015213474A1 (fr)
TW (1) TWI600807B (fr)
WO (1) WO2017012733A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022049034A1 (fr) * 2020-09-01 2022-03-10 Globalwafers Co., Ltd. Systèmes de tirage de cristaux ayant un élément de couverture pour recouvrir la charge de silicium et procédés de croissance d'une masse fondue de silicium dans un ensemble formant creuset

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106546B (zh) * 2019-05-24 2021-04-27 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN113862772A (zh) * 2021-09-27 2021-12-31 云南北方光学科技有限公司 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
JP2012091942A (ja) * 2010-10-22 2012-05-17 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
WO2014051539A1 (fr) 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Procédé de préparation de fusion de silicium fondu à l'aide d'une fusion à haute pression
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
CN104685113A (zh) * 2012-09-10 2015-06-03 Gtatip控股有限责任公司 连续cz方法和设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
JP2012091942A (ja) * 2010-10-22 2012-05-17 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
WO2014051539A1 (fr) 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Procédé de préparation de fusion de silicium fondu à l'aide d'une fusion à haute pression
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
US20150284876A1 (en) * 2014-04-03 2015-10-08 Globalwafers Co., Ltd. Crystal growth apparatus and thermal insulation cover of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022049034A1 (fr) * 2020-09-01 2022-03-10 Globalwafers Co., Ltd. Systèmes de tirage de cristaux ayant un élément de couverture pour recouvrir la charge de silicium et procédés de croissance d'une masse fondue de silicium dans un ensemble formant creuset

Also Published As

Publication number Publication date
CN107923064A (zh) 2018-04-17
DE102015213474A1 (de) 2015-09-24
TWI600807B (zh) 2017-10-01
TW201704558A (zh) 2017-02-01

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