WO2017000500A1 - 一种mems压力传感元件 - Google Patents

一种mems压力传感元件 Download PDF

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Publication number
WO2017000500A1
WO2017000500A1 PCT/CN2015/096918 CN2015096918W WO2017000500A1 WO 2017000500 A1 WO2017000500 A1 WO 2017000500A1 CN 2015096918 W CN2015096918 W CN 2015096918W WO 2017000500 A1 WO2017000500 A1 WO 2017000500A1
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pressure sensitive
pressure
sensitive beam
center
groove
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French (fr)
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郑国光
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Goertek Inc
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Goertek Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/006—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of metallic strain gauges fixed to an element other than the pressure transmitting diaphragm
    • G01L9/0064—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of metallic strain gauges fixed to an element other than the pressure transmitting diaphragm the element and the diaphragm being in intimate contact
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L2009/0066—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means

Definitions

  • the utility model relates to the field of sensors, and more particularly to a MEMS pressure sensing element.
  • the pressure sensitive membrane is typically used as an electrical capacitive plate or resistor. Since it must be exposed to air and cannot be placed in a closed electrical cavity, external electromagnetic interference can affect the output of the MEMS pressure sensor.
  • a MEMS pressure sensing element comprising: a substrate provided with a groove; a pressure sensitive film disposed above the substrate, the pressure sensitive film sealing the groove Opening to form a sealed cavity; a pressure sensitive beam suspended in the sealed cavity parallel to the pressure sensitive membrane, the pressure sensitive beam being provided with a varistor; wherein the center of the pressure sensitive beam passes
  • the first anchor point is fixedly connected to the center of the pressure sensitive film, and the outer circumference of the pressure sensitive beam is fixedly connected with the bottom wall of the base groove, so that the pressure sensitive film drives the pressure sensitive beam to bend and deform under external pressure.
  • the outer circumference of the pressure sensitive beam is fixedly connected to the bottom wall of the base groove by an anchoring ring.
  • the pressure sensitive beam is in the shape of a cross, and one ends of the four sides of the pressure sensitive beam away from the center of the pressure sensitive beam are respectively fixedly connected to the bottom wall of the base groove by the anchor ring.
  • the pressure sensitive beam is in the shape of a cross, and one end of the four sides of the pressure sensitive beam away from the center of the pressure sensitive beam is fixedly connected to the bottom wall of the base groove by an anchor point.
  • the varistor is four, correspondingly disposed on four sides of the pressure sensitive beam; the four varistors constitute a Wheatstone bridge.
  • the sealing cavity is further provided with a limiting protrusion, and the limiting protrusion is disposed on the bottom wall of the base groove and below the center of the pressure sensitive beam.
  • the pressure sensitive film is made of single crystal silicon.
  • the pressure sensitive film has a thickness of 10 um to 30 um.
  • the MEMS pressure sensing element of the present invention when the pressure acts on the pressure sensitive membrane, the deformation of the pressure sensitive membrane will drive the pressure sensitive beam to move, thereby causing the bending of the pressure sensitive beam, and then causing pressure sensitivity on the pressure sensitive beam.
  • the change in the resistance of the resistor which not only completes the pressure-sensitive function, but also shields the external electromagnetic interference of the electrical part of the pressure sensing element.
  • the inventors of the present invention have found that in the prior art, there is no MEMS pressure sensing element capable of shielding external electromagnetic interference outside the electrical portion. Therefore, the technical task to be realized by the present invention or the technical problem to be solved is not thought of or unexpectedly expected by those skilled in the art, so the present invention is a new technical solution.
  • FIG. 1 is a schematic structural view of an embodiment of a MEMS pressure sensing element of the present invention.
  • Figure 2 is a plan view of the pressure sensitive beam of Figure 1.
  • 3-13 are schematic views showing a manufacturing process of a MEMS pressure sensing element according to an embodiment of the present invention.
  • a pressure sensitive beam 200 is disposed in the sealed cavity 700 parallel to the pressure sensitive film 100, and the pressure sensitive beam 200 is provided with a varistor 300.
  • the pressure sensitive beam 200 is in the shape of a cross, and the center of the pressure sensitive beam 200 is fixedly connected to the center of the pressure sensitive film 100 through the first anchor point 400, and the ends of the four sides of the pressure sensitive beam 200 away from the center of the pressure sensitive beam 200 respectively pass through the anchor.
  • the retaining ring 500 is fixedly coupled to the bottom wall of the groove of the substrate 1.
  • one end of the four sides of the pressure sensitive beam 200 remote from the center of the pressure sensitive beam 200 can be fixedly coupled to the bottom wall of the groove of the substrate 1 through an anchor point, respectively.
  • the pressure sensitive beam 200 can also have other shapes, and the outer circumference of the pressure sensitive beam 200 is fixedly coupled to the bottom wall of the groove of the substrate 1.
  • the varistor 300 is four, correspondingly disposed on four sides of the pressure sensitive beam 200, and the four varistor 300 constitute a Wheatstone bridge.
  • a limiting protrusion 600 is also disposed in the sealing cavity 700.
  • the limiting protrusion 600 is disposed on the bottom wall of the groove of the substrate 1 and below the center of the pressure sensitive beam 200.
  • Limiting projection 600 It is used to define the displacement of the pressure sensitive beam 200, and avoid the displacement of the pressure sensitive beam 200 to cause the failure of the pressure sensitive beam 200 to be damaged.
  • the first anchor point 400 and the anchoring ring 500 are preferably oxides.
  • the pressure sensitive film 100 is preferably made of single crystal silicon and has a thickness of preferably 10 um to 30 um.
  • the deformation of the pressure sensitive film 100 causes the pressure sensitive beam 200 to move, thereby causing the bending of the pressure sensitive beam 200, which in turn causes the resistance of the varistor 300 disposed on the pressure sensitive beam 200.
  • the change so that the pressure of the external pressure can be read inside the pressure sensing element. Connecting the pressure sensitive membrane to the ground potential not only detects the external pressure, but also shields the external electromagnetic interference from the electrical part to achieve the purpose of improving the accuracy of the MEMS pressure sensor.
  • a first wafer 11 is provided; as shown in FIG. 4, a first oxide layer 12 is deposited on the first wafer 11; the first oxide layer 12 is patterned and etched, and is etched by two steps.
  • the starting portion 600 is lower, the first annular connecting portion 500 and the first outer ring supporting portion 121 are higher; the first annular connecting portion 500 serves as an anchor point for fixing the outer circumference of the pressure sensitive beam to the base in the subsequent process.
  • a second wafer 13 is provided; as shown in FIG. 6, a second oxide layer 14 is deposited on the front surface of the second wafer 13; the second oxide layer 14 is patterned and etched to form a center
  • the second connecting portion 400 and the second outer ring supporting portion 141 surrounding the second connecting portion 400; the second connecting portion 400 serves as a fixed anchor point between the pressure sensitive beam and the pressure sensitive film in the subsequent process.
  • the second wafer 13 is etched by using the second connecting portion 400 and the second outer ring supporting portion 141 as a mask to form an annular groove 131 on the front surface of the second wafer 13 to avoid The pressure sensitive film and the pressure sensitive film are bonded together in the subsequent process.
  • the etching here may be DRIE (Deep Reactive Ion Etching);
  • a third wafer 15 is provided, and the third wafer 15 is bonded to the second connecting portion 400 and the second outer ring supporting portion 141;
  • the second wafer 13 is patterned and etched to form a cross-shaped pressure sensitive beam 200 and a third outer ring support portion 131 surrounding the pressure sensitive beam 200; the etching here may be a deep reaction Ion etching (DRIE, Deep Reactive Ion Etching);
  • DRIE deep Reactive Ion Etching
  • the pressure sensitive beam 200 is bonded to the first annular connecting portion 500, and the third outer ring supporting portion 131 and the first outer ring supporting portion 121 are bonded; after this step is completed, The first wafer 11, the third wafer 15, and the layers between the first wafer 11 and the third wafer 15 collectively enclose a sealed cavity 700 to encapsulate the pressure sensitive beam 200;
  • the third wafer 15 is thinned to form a pressure sensitive pressure sensitive film 100.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

一种MEMS压力传感元件，包括：设有凹槽的基底（1）；设置于基底（1）上方的压力敏感膜（100），压力敏感膜（100）密封凹槽的开口以形成密封腔体（700）；悬置于密封腔体（700）内的平行于压力敏感膜（100）的压力敏感梁（200），其上设置有压敏电阻（300）；压力敏感梁（200）的中心与压力敏感膜（100）的中心固定连接，外周与基底（1）凹槽的底壁固定连接，以使压力敏感膜（100）在外界压力作用下带动压力敏感梁（200）弯曲变形。还提供一种MEMS压力传感元件的制造方法。当压力作用在压力敏感膜（100）上时，压力敏感膜（100）带动压力敏感梁（200）运动引起压力敏感梁（200）的弯曲，继而引起压力敏感梁（200）上的压敏电阻（300）的阻值的变化，这样既完成压力敏感的功能，又屏蔽了外界对压力传感元件的电学部分的电磁干扰。

Description

一种MEMS压力传感元件 技术领域
本实用新型涉及传感器领域，更具体地，涉及一种MEMS压力传感元件。
背景技术
目前的MEMS压力传感器，无论是压阻式还是电容式的，都需要把压力敏感薄膜暴露在空气中，否则压力敏感膜无法对外界的气压做出敏感的反应。该压力敏感膜通常作为电学电容极板或电阻应用，由于其必须暴露在空气中而不能设置于在封闭的电学腔体中，外界的电磁干扰会对MEMS压力传感器的输出造成影响。
实用新型内容
本实用新型的目的是提供一种能够屏蔽外界对压力传感元件的电学部分的电磁干扰的MEMS压力传感元件。
根据本实用新型的第一方面，提出了一种MEMS压力传感元件，包括：设有凹槽的基底；设置于所述基底上方的压力敏感膜，所述压力敏感膜密封所述凹槽的开口以形成密封腔体；悬置于所述密封腔体内的平行于所述压力敏感膜的压力敏感梁，所述压力敏感梁上设置有压敏电阻；其中，所述压力敏感梁的中心通过第一锚点与压力敏感膜的中心固定连接，所述压力敏感梁的外周与基底凹槽的底壁固定连接，以使所述压力敏感膜在外界压力作用下带动所述压力敏感梁弯曲变形。
优选的，所述压力敏感梁的外周通过一锚定环与基底凹槽的底壁固定连接。
优选的，所述压力敏感梁为十字形，所述压力敏感梁的四条边的远离压力敏感梁的中心的一端分别通过所述锚定环与基底凹槽的底壁固定连接。
优选的，所述压力敏感梁为十字形，所述压力敏感梁的四条边的远离压力敏感梁的中心的一端分别通过锚点与基底凹槽的底壁固定连接。
优选的，所述压敏电阻为4个，对应设置在所述压力敏感梁的四条边上；所述4个压敏电阻构成惠斯通电桥。
优选的，所述密封腔体内还设置有限位凸起部，所述限位凸起部设置于基底凹槽的底壁并且位于所述压力敏感梁的中心的下方。
优选的，所述压力敏感膜为单晶硅材质。
优选的，所述压力敏感膜的厚度为10um-30um。
本实用新型的MEMS压力传感元件，压力作用在压力敏感膜上时，压力敏感膜发生形变会带动压力敏感梁运动，进而引起压力敏感梁的弯曲，继而引起设置在压力敏感梁上的压敏电阻的阻值的变化，这样既完成压力敏感的功能，又屏蔽了外界对压力传感元件的电学部分的电磁干扰。
本实用新型的发明人发现，在现有技术中，还没有一种能够将外界电磁干扰屏蔽在电学部分外部的MEMS压力传感元件。因此，本实用新型所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本实用新型是一种新的技术方案。
通过以下参照附图对本实用新型的示例性实施例的详细描述，本实用新型的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本实用新型的实施例，并且连同其说明一起用于解释本实用新型的原理。
图1是本实用新型MEMS压力传感元件实施例的结构示意图。
图2是图1中的压力敏感梁的平面示意图。
图3-13是本实用新型实施例的MEMS压力传感元件的制造过程示意图。
具体实施方式
现在将参照附图来详细描述本实用新型的各种示例性实施例。应注意 到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本实用新型的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本实用新型及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1-2介绍本实用新型MEMS压力传感元件的实施例，包括：
设有凹槽的基底1，设置于基底1上方的压力敏感膜100，压力敏感膜100密封凹槽的开口以形成密封腔体700。
悬置于密封腔体700内的平行于压力敏感膜100的压力敏感梁200，压力敏感梁200上设置有压敏电阻300。
压力敏感梁200为十字形，压力敏感梁200的中心通过第一锚点400与压力敏感膜100的中心固定连接，压力敏感梁200的四条边的远离压力敏感梁200的中心的一端分别通过锚定环500与基底1凹槽的底壁固定连接。
在另一个实施例中，可以令压力敏感梁200的四条边的远离压力敏感梁200的中心的一端分别通过锚点与基底1凹槽的底壁固定连接。在其它实施例中，压力敏感梁200还可以为其它形状，压力敏感梁200的外周与基底1凹槽的底壁固定连接。
本实施例中，压敏电阻300为4个，对应设置在压力敏感梁200的四条边上，4个压敏电阻300构成惠斯通电桥。
密封腔体700内还设置有限位凸起部600，限位凸起部600设置于基底1凹槽的底壁并且位于压力敏感梁200的中心的下方。限位凸起部600 用于限定压力敏感梁200的位移，避免压力敏感梁200位移过大造成压力敏感梁200损坏功能失效。
其中，第一锚点400和锚定环500优选为氧化物。压力敏感膜100优选为单晶硅材质，厚度优选为10um-30um。
压力作用在压力敏感膜100上时，压力敏感膜100发生形变会带动压力敏感梁200运动，进而引起压力敏感梁200的弯曲，继而引起设置在压力敏感梁200上的压敏电阻300的阻值的变化，从而在压力传感元件的内部就可以读到外界压力的变化。将压力敏感膜接到地电位，既实现了对外界压力的检测，又将外界电磁干扰屏蔽在电学部分之外，达到提高MEMS压力传感器精度的目的。
参考图3-13介绍上述实施例的MEMS压力传感元件的制造过程：
S101、参考图3所示，提供第一晶片11；参考图4所示，在第一晶片11上沉积第一氧化层12；对第一氧化层12进行构图和刻蚀，通过两步刻蚀后形成位于中心的限位凸起部600、环绕限位凸起部600的第一环状连接部500、以及环绕第一环状连接部500的第一外环支撑部121；其中限位凸起部600较低，第一环状连接部500和第一外环支撑部121较高；第一环状连接部500作为后续过程中压力敏感梁的外周固定在基底上的锚点。
S102、参考图5所示，提供第二晶片13；参考图6所示，在第二晶片13的正面沉积第二氧化层14；对第二氧化层14进行构图和刻蚀，以形成位于中心的第二连接部400和环绕第二连接部400的第二外环支撑部141；第二连接部400作为后续过程中压力敏感梁与压力敏感膜之间的固定锚点。
S103、参考图7所示，以第二连接部400和第二外环支撑部141为掩膜对第二晶片13进行刻蚀，以在第二晶片13的正面形成环状凹槽131，以免后续过程中压力敏感膜和压力敏感膜粘结在一起。这里的刻蚀可以是深反应离子刻蚀(DRIE，Deep Reactive Ion Etching)；
S104、参考图8所示，提供第三晶片15，将第三晶片15与第二连接部400和第二外环支撑部141键合；
S105、参考图9所示，翻转图8所示的结构，从第二晶片13的背面对第二晶片13进行减薄以提高后续生成的压力敏感梁的灵敏度；
S106、参考图10所示，从第二晶片13的背面进行离子注入，形成压敏电阻条300；
S107、参考图11所示，对第二晶片13进行构图和刻蚀，形成十字形的压力敏感梁200和环绕压力敏感梁200的第三外环支撑部131；这里的刻蚀可以是深反应离子刻蚀(DRIE，Deep Reactive Ion Etching)；
S108、参考图12所示，将压力敏感梁200和第一环状连接部500键合，以及将第三外环支撑部131和第一外环支撑部121键合；这一步键合完成后，第一晶片11、第三晶片15、以及第一晶片11和第三晶片15之间的各层共同围成密封腔体700，将压力敏感梁200板封装在内；
S109、参考图13所示，对第三晶片15进行减薄，以形成对压力敏感的压力敏感膜100。
已经通过例子对本实用新型的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本实用新型的范围。本领域的技术人员应该理解，可在不脱离本实用新型的范围和精神的情况下，对以上实施例进行修改。本实用新型的范围由所附权利要求来限定。

Claims (8)

  1. 一种MEMS压力传感元件，其特征在于，包括：
    设有凹槽的基底(1)；
    设置于所述基底(1)上方的压力敏感膜(100)，所述压力敏感膜(100)密封所述凹槽的开口以形成密封腔体(700)；
    悬置于所述密封腔体(700)内的平行于所述压力敏感膜(100)的压力敏感梁(200)，所述压力敏感梁(200)上设置有压敏电阻(300)；
    其中，所述压力敏感梁(200)的中心通过第一锚点(400)与压力敏感膜(100)的中心固定连接，所述压力敏感梁(200)的外周与基底(1)凹槽的底壁固定连接，以使所述压力敏感膜(100)在外界压力作用下带动所述压力敏感梁(200)弯曲变形。
  2. 根据权利要求1所述的元件，其特征在于，所述压力敏感梁(200)的外周通过一锚定环(500)与基底(1)凹槽的底壁固定连接。
  3. 根据权利要求2所述的元件，其特征在于，所述压力敏感梁(200)为十字形，所述压力敏感梁(200)的四条边的远离压力敏感梁(200)的中心的一端分别通过所述锚定环(500)与基底(1)凹槽的底壁固定连接。
  4. 根据权利要求1所述的元件，其特征在于，所述压力敏感梁(200)为十字形，所述压力敏感梁(200)的四条边的远离压力敏感梁(200)的中心的一端分别通过锚点与基底(1)凹槽的底壁固定连接。
  5. 根据权利要求3或4任一项所述的元件，其特征在于，所述压敏电阻(300)为4个，对应设置在所述压力敏感梁(200)的四条边上；所述4个压敏电阻(300)构成惠斯通电桥。
  6. 根据权利要求1所述的元件，其特征在于，所述密封腔体(700)内还设置有限位凸起部(600)，所述限位凸起部(600)设置于基底(1)凹槽的底壁并且位于所述压力敏感梁(200)的中心的下方。
  7. 根据权利要求1所述的元件，其特征在于，所述压力敏感膜(100)为单晶硅材质。
  8. 根据权利要求1所述的元件，其特征在于，所述压力敏感膜(100) 的厚度为10um-30um。
PCT/CN2015/096918 2015-06-29 2015-12-10 一种mems压力传感元件 Ceased WO2017000500A1 (zh)

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