WO2017000501A1 - 一种mems压力传感元件 - Google Patents

一种mems压力传感元件 Download PDF

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Publication number
WO2017000501A1
WO2017000501A1 PCT/CN2015/096919 CN2015096919W WO2017000501A1 WO 2017000501 A1 WO2017000501 A1 WO 2017000501A1 CN 2015096919 W CN2015096919 W CN 2015096919W WO 2017000501 A1 WO2017000501 A1 WO 2017000501A1
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WO
WIPO (PCT)
Prior art keywords
pressure
elastic beam
rectangular frame
connecting arm
movable plate
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PCT/CN2015/096919
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English (en)
French (fr)
Inventor
郑国光
Original Assignee
歌尔声学股份有限公司
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Priority to US15/559,647 priority Critical patent/US10551263B2/en
Publication of WO2017000501A1 publication Critical patent/WO2017000501A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0029—Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/069—Protection against electromagnetic or electrostatic interferences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0145—Flexible holders
    • B81B2203/0172—Flexible holders not provided for in B81B2203/0154 - B81B2203/0163
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/053—Translation according to an axis perpendicular to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/05—Arrays
    • B81B2207/053—Arrays of movable structures

Definitions

  • the present invention relates to the field of sensors and, more particularly, to a MEMS pressure sensing element.
  • the pressure sensitive membrane is typically used as an electrical capacitive plate or resistor. Since it must be exposed to air and cannot be placed in a closed electrical cavity, external electromagnetic interference can affect the output of the MEMS pressure sensor.
  • the existing capacitive MEMS pressure sensor adopts a single-capacitance detection method: a pressure-sensitive membrane forms a sealed vacuum chamber with the substrate, and when the external air pressure changes, the pressure-sensitive membrane above the vacuum chamber bends, thereby causing pressure The capacitance formed by the sensitive film and the substrate changes, and the external pressure can be obtained by detecting the change in the capacitance.
  • the above capacitive MEMS pressure sensor detects the change of external pressure through a single capacitor.
  • the amount of capacitance change caused by the change of the external air pressure is small, and the error of detecting by using a single capacitor is large.
  • other interference signals will also cause changes in capacitance, such as stress, temperature and other common-mode signals, will affect the change in capacitance.
  • the single-capacitance detection cannot filter out the external interference signal, which will affect the noise level of the output signal and reduce the signal-to-noise ratio.
  • a MEMS pressure sensing element comprising: a substrate provided with a groove; a pressure sensitive film disposed above the substrate, the pressure sensitive film dense Sealing the opening of the groove to form a sealed cavity; a movable plate and a fixed plate constituting a capacitor structure in the sealed cavity; wherein the fixed plate is fixed to a bottom wall of the base groove, The movable plate is suspended above the fixed plate and opposite to the fixed plate; the pressure sensitive film is connected to the movable plate to drive the movable pole under external pressure Board movement.
  • the movable plate comprises a first torsion mass, a pressure transmission portion and a second torsion mass arranged in parallel, the first torsion mass and the second torsion mass being related to the pressure conduction Symmetrical;
  • the pressure transmitting portion is connected to the first torsion mass through a first elastic connecting portion, and is connected to the second torsional mass through a second elastic connecting portion;
  • a central portion of the pressure transmitting portion passes through
  • An anchor point is fixedly coupled to a central portion of the pressure sensitive membrane;
  • a central portion of the first torsion mass is fixedly coupled to a bottom wall of the base recess by a second anchor point;
  • the third anchor point is fixedly connected to the bottom wall of the base groove.
  • the first elastic connecting portion includes a first elastic beam, a first connecting arm, and a second connecting arm;
  • the second elastic connecting portion includes a second elastic beam, a third connecting arm, and a fourth connecting arm
  • the first elastic beam and the second elastic beam are parallel to the pressure conducting portion; two ends of the first elastic beam are respectively connected to the pressure conducting portion through a first connecting arm, the first elastic beam
  • the middle of the second elastic beam is connected to the first torsion mass by a second connecting arm; the two ends of the second elastic beam are respectively connected to the pressure conducting portion through a third connecting arm, and the middle of the second elastic beam passes through
  • a fourth connecting arm is coupled to the second torsion mass.
  • the first torsion mass comprises a first rectangular frame structure and a third elastic beam;
  • the first rectangular frame structure comprises a first movable plate and a second movable plate parallel to the pressure conducting portion, And a fifth connecting arm perpendicular to the pressure conducting portion;
  • the third elastic beam connecting the midpoints of the two connecting arms, the center of which is fixed by the second anchor point and the bottom wall of the base groove Connecting;
  • the second torsional mass comprises a second rectangular frame structure and a fourth elastic beam;
  • the second rectangular frame structure comprising a third movable plate and a fourth movable plate parallel to the pressure conducting portion, and Two sixth connecting arms perpendicular to the pressure conducting portion;
  • the fourth elastic beam connecting the midpoints of the two sixth connecting arms, the center of which is fixedly connected to the bottom wall of the base groove by the third anchor point
  • the fixed plate includes first, second, third, and fourth fixed plates, the first, second, The third and fourth fixed plates form a first, second, third, and fourth capacitor structures in
  • the first capacitor structure and the fourth capacitor structure are connected in parallel by metal leads to form a first group of capacitors; the second capacitor structure and the third capacitor structure are connected in parallel by metal leads to form a second group of capacitors; A set of capacitors and the second set of capacitors form a pair of differential capacitors.
  • the first torsion mass comprises a first rectangular frame structure, a third elastic beam, and a seventh connecting arm;
  • the first rectangular frame structure is provided with a first opening at an intermediate position away from one side of the pressure conducting portion;
  • the third elastic beam is located inside the first rectangular frame, and the two ends are respectively connected to the first rectangular frame structure perpendicular to the opposite side of the pressure conducting portion; one end of the seventh connecting arm is connected to the midpoint of the third elastic beam, and the other end is Extending from the first opening, the first rectangular frame is externally connected to the second anchor point; the upper end of the second anchor point is connected to the pressure sensitive film, and the lower end is connected to the bottom wall of the base groove;
  • the second torsion mass includes the first a second rectangular frame structure, a fourth elastic beam, and an eighth connecting arm;
  • the second rectangular frame structure is provided with a second opening at an intermediate position away from one side of the pressure conducting portion;
  • the fourth elastic beam is located inside the second rectangular frame The two ends are respectively connected to the second rectangular
  • the fixed plate comprises first, second, third and fourth fixed plates respectively located below the four corners of the first rectangular frame, the first and second fixed plates being relatively far from the pressure a conducting portion, the third and fourth fixed plates are relatively close to the pressure transmitting portion; the fixed plate further includes fifth, sixth, seventh, and eighth portions respectively located below the four corners of the second rectangular frame a fixed plate, the fifth and sixth fixed plates are relatively close to the pressure conducting portion, the seventh and eighth fixed plates are relatively far away from the pressure conducting portion; and the first to eighth fixed plates are twisted with the corresponding portion above
  • the mass forms first to eighth capacitor structures, wherein the first, second, seventh, and eighth capacitor structures are connected in parallel by wires to form a first group of capacitors, third, fourth, fifth, and sixth capacitor structures
  • a second set of capacitors is formed by paralleling the leads; the first set of capacitors and the second set of capacitors form a pair of differential capacitors.
  • the sealing cavity is further provided with a limiting protrusion, and the limiting protrusion is disposed on the bottom wall of the base groove and below the pressure conducting portion.
  • the pressure sensitive film is made of single crystal silicon.
  • the pressure sensitive film has a thickness of um-um.
  • the MEMS pressure sensing element of the present invention separates pressure sensitive and electrical detection, exposes the pressure sensitive membrane to air, and places the capacitor structure in a sealed cavity surrounded by the pressure sensitive membrane and the substrate, the movable pole of the capacitor structure
  • the plate is driven by a pressure sensitive membrane, which not only performs the pressure sensitive function, but also shields the external electromagnetic interference of the capacitor structure.
  • the inventors of the present invention have found that in the prior art, there is no MEMS pressure sensing element capable of shielding external electromagnetic interference from the outside of the capacitor. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • Figure 1 is a schematic view showing the structure of a first embodiment of a MEMS pressure sensing element of the present invention.
  • FIG. 2 is a plan view showing the capacitor structure of the first embodiment of the MEMS pressure sensing element of the present invention.
  • 3-4 are diagrams showing a state in which the MEMS pressure sensing element according to the first embodiment of the present invention is subjected to external pressure changes.
  • 5-18 are schematic views showing a manufacturing process of a MEMS pressure sensing element according to a first embodiment of the present invention.
  • Figure 19 is a plan view showing the capacitor structure of the second embodiment of the MEMS pressure sensing element of the present invention.
  • a first embodiment of a MEMS pressure sensing element of the present invention is described with reference to Figures 1-4, including:
  • a substrate 1 provided with a groove, a pressure sensitive film 5 disposed above the substrate 1, and a pressure sensitive film 5 sealing the opening of the groove to form a sealed cavity 500.
  • a movable plate and a fixed plate constituting a capacitor structure located in the sealed cavity 500; wherein the fixed plate is fixed to the bottom wall of the groove of the substrate 1, and the movable plate is suspended above the fixed plate and fixed The plates are opposite; the pressure sensitive film 5 is connected to the movable plate to drive the movable plate under the action of external pressure.
  • the fixed plate includes a first fixed electrode plate 601, a second fixed electrode plate 602, a third fixed electrode plate 603, and a fourth fixed electrode plate 604 which are sequentially arranged in parallel.
  • the movable plate includes a first torsion mass, a pressure transmitting portion 350, and a second torsion mass arranged in parallel, the first torsion mass and the second torsion mass being symmetric with respect to the pressure transmitting portion 350.
  • the pressure transmitting portion 350 is strip-shaped, and is fixedly connected to the central portion of the pressure sensitive film 5 through the first anchor point 100 at the central portion; the pressure transmitting portion 350 is connected to the first torsion mass through the first elastic connecting portion, and passes through the second elastic portion.
  • the connecting portion is connected to the second torsion mass; through the above arrangement, the movable plate is connected to the pressure sensitive film 5 through the first anchor point 100 at a central portion thereof, and can pass the first elastic connecting portion under the driving of the pressure sensitive film 5 And the second elastic connecting portion makes the first and second The torsional movement of the torsion mass occurs.
  • the first torsion mass includes a first rectangular frame structure and a third elastic beam 312;
  • the first rectangular frame structure includes a first movable plate 301 and a second movable plate 302 parallel to the pressure conducting portion 350, and two
  • the fifth connecting arm 311 is perpendicular to the pressure conducting portion 350;
  • the third elastic beam 312 connects the midpoints of the two fifth connecting arms 311, and the center thereof is fixedly connected to the bottom wall of the groove of the base 1 through the second anchor point 200.
  • the second torsional mass includes a second rectangular frame structure and a fourth elastic beam 322;
  • the second rectangular frame structure includes a third movable plate 303 and a fourth movable plate 304 parallel to the pressure conducting portion 350, and two
  • the sixth connecting arm 321 is perpendicular to the pressure transmitting portion 350;
  • the fourth elastic beam 322 connects the midpoints of the two sixth connecting arms 321 , and the center thereof is fixedly connected to the bottom wall of the groove of the base 1 through the third anchor point 300.
  • the first elastic connecting portion includes a first elastic beam 313, a first connecting arm 314, and a second connecting arm 315; the first elastic beam 313 is parallel to the pressure transmitting portion 350; the two ends of the first elastic beam 313 are respectively passed through a first
  • the connecting arm 314 is connected to the pressure transmitting portion 350, and the middle of the first elastic beam 313 is connected to the second movable plate 302 of the first torsion mass via the second connecting arm 315.
  • the second elastic connecting portion includes a second elastic beam 323, a third connecting arm 324, and a fourth connecting arm 325; the second elastic beam 323 is parallel to the pressure transmitting portion 350; the two ends of the second elastic beam 323 respectively pass a third
  • the connecting arm 324 is connected to the pressure transmitting portion 350, and the middle of the second elastic beam 323 is connected to the third movable plate 303 of the second torsion mass via the fourth connecting arm 325.
  • the first movable plate 301 and the first fixed plate 601 form a first capacitor structure C1-1
  • the second movable plate 302 and the second fixed plate 602 constitute a first capacitor structure C1-2
  • the electrode plate 303 and the third fixed electrode plate 603 constitute a third capacitor structure C2-1
  • the fourth movable electrode plate 304 and the fourth fixed electrode plate 604 constitute a first capacitor structure C2-2.
  • the first capacitor structure C1-1 and the fourth capacitor structure C2-2 are connected in parallel by metal leads to form a first group of capacitors C1; the second capacitor structure C1-2 and the third capacitor structure C2-1 are connected in parallel by metal leads to form a second The group capacitor C2; the first group capacitor C1 and the second group capacitor C2 form a pair of differential capacitors.
  • a limiting protrusion 122 is disposed in the sealing cavity 500.
  • the limiting protrusion 122 is disposed on the bottom wall of the groove of the substrate 1 and below the pressure conducting portion 350.
  • the limiting protrusion 122 is used to define the displacement of the pressure conducting portion 350, so as to avoid the element loss caused by the movable plate contacting the fixed plate. Bad function is invalid.
  • the first, second, and third anchor points 100, 200, and 300 are preferably oxides.
  • the pressure sensitive film 5 is preferably made of single crystal silicon and has a thickness of preferably 10 um to 30 um.
  • the pressure sensitive membrane 5 When the external pressure acts on the pressure sensitive membrane 5, the pressure sensitive membrane 5 will drive the movable plate to move, causing a change in the distance between the movable plate and the fixed electrode, thereby causing a change in capacitance, which can be realized by detecting a change in capacitance. Detection of external pressure. Connecting the pressure sensitive membrane 5 to the ground potential not only detects the external pressure, but also shields the external electromagnetic interference from the electrical part to achieve the purpose of improving the accuracy of the MEMS pressure sensor.
  • the pressure sensitive film 5 is convex, and the pressure transmitting portion 350 is moved upward, and the distance between the second movable plate 302 and the second fixed plate 602 is increased.
  • the distance between the movable plate 303 and the third fixed plate 603 increases, causing the second capacitive structure C1-2 and the third capacitive structure C2-1 to simultaneously decrease; the first movable plate 301 and the first fixed plate
  • the distance between the 601 decreases, and the distance between the fourth movable plate 304 and the fourth fixed plate 604 decreases, causing the first capacitive structure C1-1 and the fourth capacitive structure C2-2 to simultaneously increase.
  • the pressure sensitive film 5 is recessed, and the pressure transmitting portion 350 is moved downward, and the distance between the second movable plate 302 and the second fixed plate 602 is decreased.
  • the distance between the three movable plates 303 and the third fixed plate 603 is reduced, resulting in the simultaneous increase of the second capacitive structure C1-2 and the third capacitive structure C2-1; the first movable plate 301 and the first
  • the distance between the fixed plates 601 increases, and the distance between the fourth movable plate 304 and the fourth fixed plate 604 increases, causing the first capacitor structure C1-1 and the fourth capacitor structure C2-2 to be simultaneously reduced. small.
  • first capacitor structure C1-1 and the fourth capacitor structure C2-2 are simultaneously increased or decreased, and the second capacitor structure C1-2 and the third capacitor structure C2-1 are simultaneously reduced or increased.
  • the first capacitor structure C1-1 and the fourth capacitor structure C2-2 constitute a first group capacitor C1, and the second capacitor structure C1-2 and the third capacitor structure C2-1 form a second group capacitor C2, and the first group capacitor C1
  • the second group of capacitors C2 form a pair of differential capacitors, and the differential pressure detection circuit performs signal processing to test the external pressure.
  • a first wafer 11 is provided; as shown in FIG. 6, in the first crystal An oxide is deposited on the sheet 11 as the isolation layer 17; as shown in FIG. 7, a metal layer is deposited on the isolation layer 17; the metal layer is patterned and etched to form a fixed electrode;
  • an oxide is deposited as the first oxide layer 12 on the isolation layer 17 and the fixed electrode plate; as shown in FIG. 9, the first oxide layer 12 is patterned and etched to expose the fixed electrode plate. And forming a third outer ring support portion 121, bonding steps 200 and 300, and a limiting protrusion portion 122; the bonding steps 200 and 300 are respectively fixing the first torsion mass and the second torsion mass on the substrate Anchor point
  • a second wafer 13 is provided; as shown in FIG. 11, the second wafer 13 is patterned and etched to form a centrally located first connection portion 132 on the front surface of the second wafer 13, and First outer ring support portion 131;
  • a third wafer 15 is provided; as shown in FIG. 13, a second oxide layer 14 is deposited on the third wafer 15; as shown in FIG. 14, the second oxide layer 14 is patterned and etched.
  • a second connecting portion 100 located at the center, and a second outer ring supporting portion 141; the second connecting portion 100 is a fixed anchor point of the pressure transmitting portion on the pressure sensitive film 5;
  • the second wafer 13 is thinned to a design thickness, and the second wafer 13 is patterned and etched to form a movable plate corresponding to the fixed plate; the movable plate includes the first a torsion mass, a pressure conducting portion, and a second torsional mass; the etching herein may be Deep Reactive Ion Etching (DRIE);
  • DRIE Deep Reactive Ion Etching
  • the third outer ring supporting portion 121 is bonded to the back surface of the second wafer 13, so that the movable plate and the fixed plate are opposite to each other to form a capacitor structure; after the bonding is completed, the first chip is completed. 11.
  • the third wafer 15 and the layers between the first wafer 11 and the third wafer 15 collectively enclose a sealed cavity, enclosing the fixed plate and the movable plate;
  • the third wafer 15 is thinned to form the pressure sensitive film 5.
  • the first torsion mass includes a first rectangular frame structure, a third elastic beam 312, and a seventh connecting arm 3001;
  • a rectangular frame structure is disposed at an intermediate position away from one side of the pressure conducting portion 350;
  • the third elastic beam 312 is located inside the first rectangular frame, and the two ends are respectively connected
  • the first rectangular frame structure is perpendicular to the opposite side of the pressure transmitting portion 350;
  • one end of the seventh connecting arm 3001 is connected to the midpoint of the third elastic beam 312, and the other end is extended from the first opening to the first rectangular frame and connected to the second
  • the anchor point (200); the upper end of the second anchor point (200) is connected to the pressure sensitive film (5), and the lower end is connected to the bottom wall of the groove of the substrate (1).
  • the second torsion mass includes a second rectangular frame structure, a fourth elastic beam 322, and an eighth connecting arm 3002; the second rectangular frame structure is provided with a second opening at an intermediate position away from one side of the pressure conducting portion 350; the fourth elastic beam The 322 is located inside the second rectangular frame, and the two ends are respectively connected to the second rectangular frame structure perpendicular to the opposite sides of the pressure conducting portion 350; one end of the eighth connecting arm 3002 is connected to the midpoint of the fourth elastic beam 322, and the other end is connected from the second opening. Extending from the second rectangular frame to the third anchor point (300); the upper end of the third anchor point (300) is connected to the pressure sensitive film (5), and the lower end is connected to the bottom wall of the groove of the substrate (1).
  • the fixed plate includes first, second, third, and fourth fixed plates 601A, 602A, 603A, and 604A respectively located under the four corners of the first rectangular frame, and first and second fixed plates 601A and 602A. Relatively far from the pressure transmitting portion 350, the third and fourth fixed plates 603A, 604A are relatively close to the pressure transmitting portion 350.
  • the fixed plate further includes fifth, sixth, seventh, and eighth fixed plates 605A, 606A, 607A, and 608A respectively located under the four corners of the second rectangular frame, and fifth and sixth fixed plates 605A, The 606A is relatively close to the pressure transmitting portion 350, and the seventh and eighth fixed plates 607A, 608A are relatively far from the pressure transmitting portion 350.
  • the first to eighth fixed plates (601A-608A) form a first to eighth capacitive structure with the torsion mass of the corresponding portion above, wherein the first, second, seventh, and eighth capacitor structures are connected in parallel by wires
  • the first set of capacitors, the third, fourth, fifth, and sixth capacitor structures are connected in parallel by wires to form a second set of capacitors; the first set of capacitors and the second set of capacitors form a pair of differential capacitors.
  • the second embodiment pulls the support anchor points of the first torsion mass and the second torsion mass to the outside of the mass, and connects the two ends of the anchor point to the pressure sensitive film and the substrate respectively, so that the anchor point is in a non-suspended state,
  • the torsion mass is bonded to the substrate, the quality of the bonding and the bonding strength can be ensured, so that the second embodiment is easier in the process realization and does not affect the motion mode of the pressure sensitive film.
  • the invention makes a metal electrode on the substrate as a fixed electrode plate, and then etches the oxide layer protrusion to reserve a movement space for the bonding of the movable electrode plate layer.
  • the top layer of the component is a pressure sensitive membrane, external pressure The force causes the pressure sensitive membrane to move up and down.
  • Below the pressure sensitive membrane is a movable plate layer, and the middle portion of the movable plate and the middle portion of the pressure sensitive membrane are anchored together by bonding.
  • the pressure sensitive membrane will drive the movable plate to move, thereby causing a change in capacitance between the movable plate and the metal electrode on the substrate, thereby detecting the external pressure.

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Abstract

一种MEMS压力传感元件，包括：设有凹槽的基底（1）；设置于基底（1）上方的压力敏感膜（5），压力敏感膜（5）密封凹槽的开口以形成密封腔体（500）；位于密封腔体（500）内的构成电容结构（C1-1、C1-2、C2-1、C2-2）的可动极板（301、302、303、304）和固定极板（601、602、603、604）；其中，固定极板（601、602、603、604）固定于基底凹槽的底壁，可动极板（301、302、303、304）悬置于固定极板（601、602、603、604）的上方并且与固定极板（601、602、603、604）相对；压力敏感膜（5）与可动极板（301、302、303、304）连接，以在外界压力作用下带动可动极板（301、302、303、304）运动。该MEMS压力传感元件将压力敏感和电学检测分开，将压力敏感膜（5）暴露在空气中，将电容结构（C1-1、C1-2、C2-1、C2-2）设置在由压力敏感膜（5）和基底围成的密封腔中，电容结构（C1-1、C1-2、C2-1、C2-2）的可动极板（301、302、303、304）由压力敏感膜（5）带动，这样既完成压力敏感的功能，又屏蔽了外界对电容结构（C1-1、C1-2、C2-1、C2-2）的电磁干扰。

Description

一种MEMS压力传感元件 技术领域
本发明涉及传感器领域，更具体地，涉及一种MEMS压力传感元件。
背景技术
目前的MEMS压力传感器，无论是压阻式还是电容式的，都需要把压力敏感薄膜暴露在空气中，否则压力敏感膜无法对外界的气压做出敏感的反应。该压力敏感膜通常作为电学电容极板或电阻应用，由于其必须暴露在空气中而不能设置于在封闭的电学腔体中，外界的电磁干扰会对MEMS压力传感器的输出造成影响。
现有电容式MEMS压力传感器多采用单电容检测的方式：由压力敏感膜与衬底形成密封真空腔，当外界的气压变化时，处在真空腔上方的压力敏感膜会发生弯曲，从而导致压力敏感膜与衬底形成的电容会发生变化，检测该电容变化即可取得外界压力。
上述电容式MEMS压力传感器是通过单个电容来检测外界压力变化，一般来说，外界气压变化所引起的电容变化量都是很小的，采用单个电容进行检测的误差很大。另外，除了外界的压力变化会引起电容变化外，其它干扰信号也会引起电容的变化，如应力、温度及其它共模信号，都会影响电容的变化值。单电容检测对外界的干扰信号无法滤除，会影响输出信号的噪声水平，降低信噪比。
发明内容
本发明的目的是提供一种能够将外界电磁干扰屏蔽在电容外部的MEMS压力传感元件。
根据本发明的第一方面，提供了一种MEMS压力传感元件，包括：设有凹槽的基底；设置于所述基底上方的压力敏感膜，所述压力敏感膜密 封所述凹槽的开口以形成密封腔体；位于所述密封腔体内的构成电容结构的可动极板和固定极板；其中，所述固定极板固定于基底凹槽的底壁，所述可动极板悬置于所述固定极板的上方并且与所述固定极板相对；所述压力敏感膜与所述可动极板连接，以在外界压力作用下带动所述可动极板运动。
优选的，所述可动极板包括依次并列设置的第一扭转质量块、压力传导部以及第二扭转质量块，所述第一扭转质量块和所述第二扭转质量块关于所述压力传导部对称；所述压力传导部通过第一弹性连接部与所述第一扭转质量块连接，通过第二弹性连接部与所述第二扭转质量块连接；所述压力传导部的中心部分通过第一锚点与所述压力敏感膜的中心部分固定连接；所述第一扭转质量块的中心部分通过第二锚点与基底凹槽的底壁固定连接；所述第二扭转质量块的中心部分处通过第三锚点与基底凹槽的底壁固定连接。
优选的，所述第一弹性连接部包括第一弹性梁、第一连接臂、以及第二连接臂；所述第二弹性连接部包括第二弹性梁、第三连接臂、以及第四连接臂；所述第一弹性梁和第二弹性梁平行于所述压力传导部；所述第一弹性梁的两端分别通过一条第一连接臂与所述压力传导部连接，所述第一弹性梁的中间通过第二连接臂与所述第一扭转质量块连接；所述第二弹性梁的两端分别通过一条第三连接臂与所述压力传导部连接，所述第二弹性梁的中间通过第四连接臂与所述第二扭转质量块连接。
优选的，所述第一扭转质量块包括第一矩形框架结构和第三弹性梁；所述第一矩形框架结构包括平行于压力传导部的第一可动极板和第二可动极板，以及两条垂直于压力传导部的第五连接臂；所述第三弹性梁连接两条所述第五连接臂的中点，其中心通过所述第二锚点与基底凹槽的底壁固定连接；所述第二扭转质量块包括第二矩形框架结构和第四弹性梁；所述第二矩形框架结构包括平行于压力传导部的第三可动极板和第四可动极板，以及两条垂直于压力传导部的第六连接臂；所述第四弹性梁连接两条所述第六连接臂的中点，其中心通过所述第三锚点与基底凹槽的底壁固定连接；所述固定极板包括第一、第二、第三、第四固定极板，所述第一、第二、 第三、第四固定极板与所述第一、第二、第三、第四可动极板一一对应形成第一、第二、第三、第四电容结构。
优选的，所述第一电容结构和第四电容结构通过金属引线并联，构成第一组电容；所述第二电容结构和第三电容结构通过金属引线并联，构成第二组电容；所述第一组电容和所述第二组电容构成一对差分电容。
优选的，所述第一扭转质量块包括第一矩形框架结构、第三弹性梁、以及第七连接臂；所述第一矩形框架结构远离压力传导部的一边的中间位置设有第一开口；所述第三弹性梁位于第一矩形框架内部，两端分别连接第一矩形框架结构垂直于压力传导部的对边；所述第七连接臂的一端连接第三弹性梁的中点，另一端从第一开口处伸出第一矩形框架外连接至第二锚点；所述第二锚点的上端连接压力敏感膜，下端连接基底凹槽的底壁；所述第二扭转质量块包括第二矩形框架结构、第四弹性梁、以及第八连接臂；所述第二矩形框架结构远离压力传导部的一边的中间位置设有第二开口；所述第四弹性梁位于第二矩形框架内部，两端分别连接第二矩形框架结构垂直于压力传导部的对边；所述第八连接臂的一端连接第四弹性梁的中点，另一端从第二开口处伸出第二矩形框架外连接至第三锚点；所述第三锚点的上端连接压力敏感膜，下端连接基底凹槽的底壁。
优选的，所述固定极板包括分别位于第一矩形框架的四个角的下方的第一、第二、第三、第四固定极板，所述第一、第二固定极板相对远离压力传导部，所述第三、第四固定极板相对接近压力传导部；所述固定极板还包括分别位于第二矩形框架的四个角的下方的第五、第六、第七、第八固定极板，所述第五、第六固定极板相对接近压力传导部，所述第七、第八固定极板相对远离压力传导部；第一至第八固定极板与其上方对应部分的扭转质量块形成第一至第八电容结构，其中第一、第二、第七、和第八电容结构通过引线并联，构成第一组电容，第三、第四、第五、和第六电容结构通过引线并联，构成第二组电容；所述第一组电容和所述第二组电容构成一对差分电容。
优选的，所述密封腔体内还设置有限位凸起部，所述限位凸起部设置于基底凹槽的底壁并且位于所述压力传导部的下方。
优选的，所述压力敏感膜为单晶硅材质。
优选的，所述压力敏感膜的厚度为um-um。
本发明的MEMS压力传感元件，将压力敏感和电学检测分开，将压力敏感膜暴露在空气中，将电容结构设置在由压力敏感膜和基底围成的密封腔中，电容结构的可动极板由压力敏感膜带动，这样既完成压力敏感的功能，又屏蔽了外界对电容结构的电磁干扰。
本发明的发明人发现，在现有技术中，还没有一种能够将外界电磁干扰屏蔽在电容外部的MEMS压力传感元件。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明MEMS压力传感元件第一实施例的结构示意图。
图2是本发明MEMS压力传感元件第一实施例的电容结构的平面示意图。
图3-4是本发明第一实施例的MEMS压力传感元件受外界压力变化下的状态图。
图5-18是本发明第一实施例的MEMS压力传感元件的制造过程示意图。
图19是本发明MEMS压力传感元件第二实施例的电容结构的平面示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、 数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1-4介绍本发明MEMS压力传感元件的第一实施例，包括：
设有凹槽的基底1，设置于基底1上方的压力敏感膜5，压力敏感膜5密封凹槽的开口以形成密封腔体500。
位于密封腔体500内的构成电容结构的可动极板和固定极板；其中，固定极板固定于基底1凹槽的底壁，可动极板悬置于固定极板的上方并且与固定极板相对；压力敏感膜5与可动极板连接，以在外界压力作用下带动可动极板运动。
参考图1和2介绍本发明MEMS压力传感元件的电容结构：
固定极板包括依次并列排布的第一固定极板601、第二固定极板602、第三固定极板603、以及第四固定极板604。
可动极板包括依次并列排布的第一扭转质量块、压力传导部350以及第二扭转质量块，第一扭转质量块和第二扭转质量块关于压力传导部350对称。
压力传导部350为条状，在中心部分通过第一锚点100与压力敏感膜5的中心部分固定连接；压力传导部350通过第一弹性连接部与第一扭转质量块连接，通过第二弹性连接部与第二扭转质量块连接；经过以上设置，可动极板在其中心部分通过第一锚点100与压力敏感膜5连接，可以在压力敏感膜5的带动下通过第一弹性连接部和第二弹性连接部使第一、第二 扭转质量块发生扭转运动。
第一扭转质量块包括第一矩形框架结构和第三弹性梁312；第一矩形框架结构包括平行于压力传导部350的第一可动极板301和第二可动极板302，以及两条垂直于压力传导部350的第五连接臂311；第三弹性梁312连接两条第五连接臂311的中点，其中心通过第二锚点200与基底1凹槽的底壁固定连接。
第二扭转质量块包括第二矩形框架结构和第四弹性梁322；第二矩形框架结构包括平行于压力传导部350的第三可动极板303和第四可动极板304，以及两条垂直于压力传导部350的第六连接臂321；第四弹性梁322连接两条第六连接臂321的中点，其中心通过第三锚点300与基底1凹槽的底壁固定连接。
第一弹性连接部包括第一弹性梁313、第一连接臂314、以及第二连接臂315；第一弹性梁313平行于压力传导部350；第一弹性梁313的两端分别通过一条第一连接臂314与压力传导部350连接，第一弹性梁313的中间通过第二连接臂315与第一扭转质量块的第二可动极板302连接。
第二弹性连接部包括第二弹性梁323、第三连接臂324、以及第四连接臂325；第二弹性梁323平行于压力传导部350；第二弹性梁323的两端分别通过一条第三连接臂324与压力传导部350连接，第二弹性梁323的中间通过第四连接臂325与第二扭转质量块的第三可动极板303连接。
第一可动极板301与第一固定极板601构成第一电容结构C1-1，第二可动极板302与第二固定极板602构成第一电容结构C1-2，第三可动极板303与第三固定极板603构成第三电容结构C2-1，第四可动极板304与第四固定极板604构成第一电容结构C2-2。
第一电容结构C1-1和第四电容结构C2-2通过金属引线并联，构成第一组电容C1；第二电容结构C1-2和第三电容结构C2-1通过金属引线并联，构成第二组电容C2；第一组电容C1和第二组电容C2构成一对差分电容。
其中，密封腔体500内还设置有限位凸起部122，限位凸起部122设置于基底1凹槽的底壁并且位于压力传导部350的下方。限位凸起部122用于限定压力传导部350的位移，避免可动极板接触固定极板造成元件损 坏功能失效。
其中，第一、第二、第三锚点100、200、300优选为氧化物。压力敏感膜5优选为单晶硅材质，厚度优选为10um-30um。
外界压力作用在压力敏感膜5上时，压力敏感膜5会带动可动极板运动，引起可动极板与固定电极之间距离的变化，从而导致电容变化，通过检测电容的变化就可以实现对外界压力的检测。将压力敏感膜5接到地电位，既实现了对外界压力的检测，又将外界电磁干扰屏蔽在电学部分之外，达到提高MEMS压力传感器精度的目的。
参考图3和图4介绍本发明MEMS传感元件的差分检测原理：
参考图3所示，当外界压力减小时，压力敏感膜5上凸，带动压力传导部350向上运动，第二可动极板302和第二固定极板602之间的距离增加，第三可动极板303和第三固定极板603之间的距离增加，导致第二电容结构C1-2和第三容结构C2-1同时减小；第一可动极板301和第一固定极板601之间的距离减小，第四可动极板304和第四固定极板604之间的距离减小，导致第一电容结构C1-1和第四电容结构C2-2同时增大。
参考图4所示，当外界压力增加时，压力敏感膜5下凹，带动压力传导部350向下运动，第二可动极板302和第二固定极板602之间的距离减小，第三可动极板303和第三固定极板603之间的距离减小，导致第二电容结构C1-2和第三容结构C2-1同时增大；第一可动极板301和第一固定极板601之间的距离增大，第四可动极板304和第四固定极板604之间的距离增大，导致第一电容结构C1-1和第四电容结构C2-2同时减小。
可见第一电容结构C1-1和第四电容结构C2-2是同时增大或减小的，第二电容结构C1-2和第三容结构C2-1是同时减小或增大的，由第一电容结构C1-1和第四电容结构C2-2构成第一组电容C1，由第二电容结构C1-2和第三电容结构C2-1构成第二组电容C2，第一组电容C1和第二组电容C2组成一对差分电容，通过差分电容检测电路进行信号处理，就可以测试出外界压力。
参考图5-18介绍上述第一实施例的MEMS压力传感元件的制造过程：
S101、参考图5所示，提供第一晶片11；参考图6所示，在第一晶 片11上沉积氧化物作为隔离层17；参考图7所示，在隔离层17上沉积金属层；对金属层进行构图和刻蚀，以形成固定极板；
S102、参考图8所示，在隔离层17和固定极板上沉积氧化物作为第一氧化层12；参考图9所示，对第一氧化层12进行构图和刻蚀，以暴露固定极板，并形成第三外环支撑部121、键合台阶200和300、以及限位凸起部122；键合台阶200和300分别为第一扭转质量块和第二扭转质量块在基底上的固定锚点；
S103、参考图10所示，提供第二晶片13；参考图11所示，对第二晶片13进行构图和刻蚀，以在第二晶片13的正面形成位于中心的第一连接部132，以及第一外环支撑部131；
S104、参考图12所示，提供第三晶片15；参考图13所示，在第三晶片15上沉积第二氧化层14；参考图14所示，对第二氧化层14进行构图和刻蚀，以形成位于中心的第二连接部100，以及第二外环支撑部141；第二连接部100为压力传导部在压力敏感膜5上的固定锚点；
S105、参考图15所示，翻转第二晶片13，将第一连接部132与第二连接部100键合，以及将第一外环支撑部131和第二外环支撑部141键合；
S106、参考图16所示，将第二晶片13减薄至设计厚度，对第二晶片13进行构图和刻蚀，以形成对应于固定极板的可动极板；可动极板包括第一扭转质量块、压力传导部、以及第二扭转质量块；这里的刻蚀可以是深反应离子刻蚀(DRIE，Deep Reactive Ion Etching)；
S107、参考图17所示，将第三外环支撑部121与第二晶片13的背面键合，令可动极板和固定极板相对构成电容结构；这一步键合完成后，第一晶片11、第三晶片15，以及第一晶片11和第三晶片15之间的各层，共同围成密封腔体，将固定极板和可动极板封装在内；
S108、参考图18所示，对第三晶片15进行减薄以形成压力敏感膜5。
参考图19介绍本发明MEMS压力传感元件的第二实施例，从图中可以看出：第一扭转质量块包括第一矩形框架结构、第三弹性梁312、以及第七连接臂3001；第一矩形框架结构远离压力传导部350的一边的中间位置设有第一开口；第三弹性梁312位于第一矩形框架内部，两端分别连接 第一矩形框架结构垂直于压力传导部350的对边；第七连接臂3001的一端连接第三弹性梁312的中点，另一端从第一开口处伸出第一矩形框架外连接至第二锚点(200)；第二锚点(200)的上端连接压力敏感膜(5)，下端连接基底(1)凹槽的底壁。
第二扭转质量块包括第二矩形框架结构、第四弹性梁322、以及第八连接臂3002；第二矩形框架结构远离压力传导部350的一边的中间位置设有第二开口；第四弹性梁322位于第二矩形框架内部，两端分别连接第二矩形框架结构垂直于压力传导部350的对边；第八连接臂3002的一端连接第四弹性梁322的中点，另一端从第二开口处伸出第二矩形框架外连接至第三锚点(300)；第三锚点(300)的上端连接压力敏感膜(5)，下端连接基底(1)凹槽的底壁。
固定极板包括分别位于第一矩形框架的四个角的下方的第一、第二、第三、第四固定极板601A、602A、603A、604A，第一、第二固定极板601A、602A相对远离压力传导部350，第三、第四固定极板603A、604A相对接近压力传导部350。
固定极板还包括分别位于第二矩形框架的四个角的下方的第五、第六、第七、第八固定极板605A、606A、607A、608A，第五、第六固定极板605A、606A相对接近压力传导部350，第七、第八固定极板607A、608A相对远离压力传导部350。
第一至第八固定极板(601A-608A)与其上方对应部分的扭转质量块形成第一至第八电容结构，其中第一、第二、第七、和第八电容结构通过引线并联，构成第一组电容，第三、第四、第五、和第六电容结构通过引线并联，构成第二组电容；第一组电容和第二组电容构成一对差分电容。
第二实施例将第一扭转质量块和第二扭转质量块的支撑锚点拉到质量块外侧，并且使锚点的两端分别连接压力敏感膜和基底，使锚点为非悬浮状态，在扭转质量块与基底键合时可以保证键合的质量和连接强度，从而使第二实施例在工艺实现上更为容易，且不影响压力敏感膜的运动模式。
本发明在衬底上制作金属电极做为固定极板，再刻蚀氧化层凸起，为可动极板层的键合预留出运动空间。元件的顶层是压力敏感膜，外界的压 力会引起压力敏感膜上下的运动，压力敏感膜的下面为可动极板层，可动极板的中间部分与压力敏感膜的中间部分通过键合锚定在一起。当压力作用在压力敏感膜上时，压力敏感膜会带动可动极板运动，进而引起可动极板与衬底上的金属电极之间的电容变化，实现对外界压力的检测。
已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种MEMS压力传感元件，其特征在于，包括：
    设有凹槽的基底(1)；
    设置于所述基底(1)上方的压力敏感膜(5)，所述压力敏感膜(5)密封所述凹槽的开口以形成密封腔体(500)；
    位于所述密封腔体(500)内的构成电容结构的可动极板和固定极板；
    其中，所述固定极板固定于基底(1)凹槽的底壁，所述可动极板悬置于所述固定极板的上方并且与所述固定极板相对；所述压力敏感膜(5)与所述可动极板连接，以在外界压力作用下带动所述可动极板运动。
  2. 根据权利要求1所述的元件，其特征在于，
    所述可动极板包括依次并列设置的第一扭转质量块、压力传导部(350)以及第二扭转质量块，所述第一扭转质量块和所述第二扭转质量块关于所述压力传导部(350)对称；
    所述压力传导部(350)通过第一弹性连接部与所述第一扭转质量块连接，通过第二弹性连接部与所述第二扭转质量块连接；
    所述压力传导部(350)的中心部分通过第一锚点(100)与所述压力敏感膜(5)的中心部分固定连接；所述第一扭转质量块的中心部分通过第二锚点(200)与基底(1)凹槽的底壁固定连接；所述第二扭转质量块的中心部分处通过第三锚点(300)与基底(1)凹槽的底壁固定连接。
  3. 根据权利要求2所述的元件，其特征在于，
    所述第一弹性连接部包括第一弹性梁(313)、第一连接臂(314)、以及第二连接臂(315)；所述第二弹性连接部包括第二弹性梁(323)、第三连接臂(324)、以及第四连接臂(325)；所述第一弹性梁(313)和第二弹性梁(323)平行于所述压力传导部(350)；
    所述第一弹性梁(313)的两端分别通过一条第一连接臂(314)与所述压力传导部(350)连接，所述第一弹性梁(313)的中间通过第二连接臂(315)与所述第一扭转质量块连接；
    所述第二弹性梁(323)的两端分别通过一条第三连接臂(324)与所 述压力传导部(350)连接，所述第二弹性梁(323)的中间通过第四连接臂(325)与所述第二扭转质量块连接。
  4. 根据权利要求2所述的元件，其特征在于，
    所述第一扭转质量块包括第一矩形框架结构和第三弹性梁(312)；所述第一矩形框架结构包括平行于压力传导部(350)的第一可动极板(301)和第二可动极板(302)，以及两条垂直于压力传导部(350)的第五连接臂(311)；所述第三弹性梁(312)连接两条所述第五连接臂(311)的中点，其中心通过所述第二锚点(200)与基底(1)凹槽的底壁固定连接；
    所述第二扭转质量块包括第二矩形框架结构和第四弹性梁(322)；所述第二矩形框架结构包括平行于压力传导部(350)的第三可动极板(303)和第四可动极板(304)，以及两条垂直于压力传导部(350)的第六连接臂(321)；所述第四弹性梁(322)连接两条所述第六连接臂(321)的中点，其中心通过所述第三锚点(300)与基底(1)凹槽的底壁固定连接；
    所述固定极板包括第一、第二、第三、第四固定极板(601、602、603、604)，所述第一、第二、第三、第四固定极板(601、602、603、604)与所述第一、第二、第三、第四可动极板(301、302、303、304)一一对应形成第一、第二、第三、第四电容结构(C1-1、C1-2、C2-1、C2-2)。
  5. 根据权利要求4所述的元件，其特征在于，
    所述第一电容结构(C1-1)和第四电容结构(C2-2)通过引线并联，构成第一组电容(C1)；所述第二电容结构(C1-2)和第三电容结构(C2-1)通过引线并联，构成第二组电容(C2)；所述第一组电容(C1)和所述第二组电容(C2)构成一对差分电容。
  6. 根据权利要求2所述的元件，其特征在于，
    所述第一扭转质量块包括第一矩形框架结构、第三弹性梁(312)、以及第七连接臂(3001)；所述第一矩形框架结构远离压力传导部(350)的一边的中间位置设有第一开口；所述第三弹性梁(312)位于第一矩形框架内部，两端分别连接第一矩形框架结构垂直于压力传导部(350)的对边；所述第七连接臂(3001)的一端连接第三弹性梁(312)的中点，另一端从第一开口处伸出第一矩形框架外连接至第二锚点(200)；所述第二锚点(200) 的上端连接压力敏感膜(5)，下端连接基底(1)凹槽的底壁；
    所述第二扭转质量块包括第二矩形框架结构、第四弹性梁(322)、以及第八连接臂(3002)；所述第二矩形框架结构远离压力传导部(350)的一边的中间位置设有第二开口；所述第四弹性梁(322)位于第二矩形框架内部，两端分别连接第二矩形框架结构垂直于压力传导部(350)的对边；所述第八连接臂(3002)的一端连接第四弹性梁(322)的中点，另一端从第二开口处伸出第二矩形框架外连接至第三锚点(300)；所述第三锚点(300)的上端连接压力敏感膜(5)，下端连接基底(1)凹槽的底壁。
  7. 根据权利要求6所述的元件，其特征在于，
    所述固定极板包括分别位于第一矩形框架的四个角的下方的第一、第二、第三、第四固定极板(601A、602A、603A、604A)，所述第一、第二固定极板(601A、602A)相对远离压力传导部(350)，所述第三、第四固定极板(603A、604A)相对接近压力传导部(350)；
    所述固定极板还包括分别位于第二矩形框架的四个角的下方的第五、第六、第七、第八固定极板(605A、606A、607A、608A)，所述第五、第六固定极板(605A、606A)相对接近压力传导部(350)，所述第七、第八固定极板(607A、608A)相对远离压力传导部(350)；
    第一至第八固定极板与其上方对应部分的扭转质量块形成第一至第八电容结构，其中第一、第二、第七、和第八电容结构通过引线并联，构成第一组电容，第三、第四、第五、和第六电容结构通过引线并联，构成第二组电容；所述第一组电容和所述第二组电容构成一对差分电容。
  8. 根据权利要求1-7任一项所述的元件，其特征在于，所述密封腔体(500)内还设置有限位凸起部(122)，所述限位凸起部(122)设置于基底(1)凹槽的底壁并且位于所述压力传导部(350)的下方。
  9. 根据权利要求1-7任一项所述的元件，其特征在于，所述压力敏感膜(5)为单晶硅材质。
  10. 根据权利要求1-7任一项所述的元件，其特征在于，所述压力敏感膜(5)的厚度为10um-30um。
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104897334B (zh) * 2015-06-29 2017-07-21 歌尔股份有限公司 一种mems压力传感元件
CN105241584A (zh) * 2015-10-14 2016-01-13 华东光电集成器件研究所 一种电容式压力传感器
CN105333889B (zh) * 2015-11-30 2017-12-05 歌尔股份有限公司 一种电容式的环境传感器及其制造方法
CN105371878B (zh) * 2015-12-04 2017-08-25 歌尔股份有限公司 一种环境传感器及其制造方法
CN105890827B (zh) * 2016-01-18 2019-05-21 广东合微集成电路技术有限公司 一种电容式压力传感器及其制造方法
CN106092153B (zh) * 2016-07-28 2018-05-01 歌尔股份有限公司 一种环境传感器及其制造方法
CN109788403B (zh) * 2018-12-24 2020-07-24 歌尔股份有限公司 检测膜体、传感器及电子设备
DE102019205350A1 (de) * 2019-04-12 2020-10-15 Robert Bosch Gmbh Mikromechanisches Bauteil für eine kapazitive Sensor- oder Schaltervorrichtung
DE102019205346A1 (de) * 2019-04-12 2020-10-15 Robert Bosch Gmbh Sensoreinrichtung und Verfahren zum Herstellen einer Sensoreinrichtung
DE102019205348A1 (de) * 2019-04-12 2020-10-15 Robert Bosch Gmbh Mikromechanisches Bauteil für eine kapazitive Sensor- oder Schaltervorrichtung
DE102020206242A1 (de) * 2020-05-18 2021-11-18 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauteil für eine Sensor- oder Mikrofonvorrichtung
CN112357875B (zh) * 2020-11-06 2023-12-26 杭州士兰微电子股份有限公司 Mems传感器及其制备方法
CN112857628B (zh) * 2021-04-02 2022-05-17 厦门市敬微精密科技有限公司 一种mems电容式压力传感器芯片及其制造工艺
CN113603054B (zh) * 2021-07-26 2024-01-26 杭州士兰微电子股份有限公司 Mems传感器及其制备方法
CN114754904B (zh) * 2022-03-30 2023-09-29 青岛歌尔智能传感器有限公司 Mems电容传感器及制备方法
DE102022206287A1 (de) 2022-06-23 2023-12-28 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauteil für eine Sensor- und/oder Mikrofonvorrichtung
CN115235655A (zh) * 2022-08-02 2022-10-25 北京智芯传感科技有限公司 一种差分电容压力传感器
CN115452207A (zh) * 2022-08-26 2022-12-09 青岛歌尔智能传感器有限公司 一种差分电容式mems压力传感器及其制造方法
CN115931185B (zh) * 2023-01-03 2024-06-11 歌尔微电子股份有限公司 一种电容式微机电传感器

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2390194Y (zh) * 1999-06-22 2000-08-02 大连理工大学 自举差动电容传感器
US6604425B1 (en) * 2000-06-09 2003-08-12 Hrl Laboratories, Llc Microelectromechanical correlation device and method
TW578112B (en) * 2002-08-13 2004-03-01 Lightuning Tech Inc Capacitive pressure micro-sensing device and finger print reading chip structure using the same
US20080053236A1 (en) * 2006-08-31 2008-03-06 Evigia Systems, Inc. Capacitive pressure sensor and method therefor
CN102249177A (zh) * 2011-05-18 2011-11-23 上海丽恒光微电子科技有限公司 微机电传感器及其形成方法
CN102401706A (zh) * 2010-08-23 2012-04-04 飞思卡尔半导体公司 Mems压力传感器件及其制造方法
US20130234263A1 (en) * 2011-11-11 2013-09-12 Tamio Ikehashi Mems element
CN103733304A (zh) * 2011-06-29 2014-04-16 因文森斯公司 其中一部分暴露在环境下并且带有竖直集成电子器件的气密封mems设备
CN104655333A (zh) * 2013-11-21 2015-05-27 中芯国际集成电路制造(上海)有限公司 一种压力传感器及其制备方法
CN104897334A (zh) * 2015-06-29 2015-09-09 歌尔声学股份有限公司 一种mems压力传感元件
CN204881959U (zh) * 2015-06-29 2015-12-16 歌尔声学股份有限公司 一种mems压力传感元件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4741214A (en) * 1986-09-19 1988-05-03 Combustion Engineering, Inc. Capacitive transducer with static compensation
JP2896725B2 (ja) * 1991-12-26 1999-05-31 株式会社山武 静電容量式圧力センサ
EP0862051A4 (en) * 1996-09-19 1999-12-08 Hokuriku Elect Ind CAPACITIVE PRESSURE CONVERTER
KR100404904B1 (ko) * 2001-06-09 2003-11-07 전자부품연구원 차동 용량형 압력센서 및 그 제조방법
US8008835B2 (en) * 2004-02-27 2011-08-30 Georgia Tech Research Corporation Multiple element electrode cMUT devices and fabrication methods
DE102007019639A1 (de) * 2007-04-26 2008-10-30 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US7578190B2 (en) * 2007-08-03 2009-08-25 Freescale Semiconductor, Inc. Symmetrical differential capacitive sensor and method of making same
EP2520917A1 (en) * 2011-05-04 2012-11-07 Nxp B.V. MEMS Capacitive Pressure Sensor, Operating Method and Manufacturing Method
US9290067B2 (en) * 2012-08-30 2016-03-22 Freescale Semiconductor, Inc. Pressure sensor with differential capacitive output
US9829406B2 (en) * 2015-09-15 2017-11-28 Nxp Usa, Inc. Differential capacitive output pressure sensor and method

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2390194Y (zh) * 1999-06-22 2000-08-02 大连理工大学 自举差动电容传感器
US6604425B1 (en) * 2000-06-09 2003-08-12 Hrl Laboratories, Llc Microelectromechanical correlation device and method
TW578112B (en) * 2002-08-13 2004-03-01 Lightuning Tech Inc Capacitive pressure micro-sensing device and finger print reading chip structure using the same
US20080053236A1 (en) * 2006-08-31 2008-03-06 Evigia Systems, Inc. Capacitive pressure sensor and method therefor
CN102401706A (zh) * 2010-08-23 2012-04-04 飞思卡尔半导体公司 Mems压力传感器件及其制造方法
CN102249177A (zh) * 2011-05-18 2011-11-23 上海丽恒光微电子科技有限公司 微机电传感器及其形成方法
CN103733304A (zh) * 2011-06-29 2014-04-16 因文森斯公司 其中一部分暴露在环境下并且带有竖直集成电子器件的气密封mems设备
US20130234263A1 (en) * 2011-11-11 2013-09-12 Tamio Ikehashi Mems element
CN104655333A (zh) * 2013-11-21 2015-05-27 中芯国际集成电路制造(上海)有限公司 一种压力传感器及其制备方法
CN104897334A (zh) * 2015-06-29 2015-09-09 歌尔声学股份有限公司 一种mems压力传感元件
CN204881959U (zh) * 2015-06-29 2015-12-16 歌尔声学股份有限公司 一种mems压力传感元件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NIU, DEFANG ET AL.: "A Study on Micromechanical Differential Capacitive Pressure Sensor", INSTRUMENT TECHNIQUE AND SENSOR, 31 December 2000 (2000-12-31), pages 4, 5 and 19, ISSN: 1002-1841 *

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