JP6258977B2 - センサおよびその製造方法 - Google Patents
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- 239000012535 impurity Substances 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/30—Supports specially adapted for an instrument; Supports specially adapted for a set of instruments
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
上述の例では主部22をSOI基板を加工して形成したが、別体を接続して形成してもよい。その場合には、より密度の高い材料を用いることにより、同じ加速度でも生じる力を大きくし、それに伴い接続体30の撓み量を大きくすることができる。これにより、さらに感度の高いセンサを提供することができる。
次に、上述のセンサ100の製造方法について、図3〜図4を用いて説明する。
なお、図3において、(a)および(b)は図1のII−II線における断面に相当する断面図であり、(c)は上面図である。図4は、図1のII−II線における断面に相当する断面図である。
まず、図3(a)に示すように、基板50の上面に抵抗体膜51を形成する。
次に、気圧検出部Rp,加速度検出部Raが形成された基板50を加工することにより、圧力検出部Rpを有する重錘体20と、重錘体20を囲むような枠体10と、加速度検出部Raを有し、一方端が枠体10に他方端が重錘体20に連結される接続体30とを形成する。
上述の例では、抵抗体膜51を形成した後に、抵抗体膜51を所望の形状の気圧検出部Rpおよび加速度検出部Raとなるように加工した例を用いて説明したが、予め第1層50aの上面にレジスト膜を形成し、気圧検出部Rpおよび加速度検出部Raを形成する領域のレジスト膜を除去し、所望の位置(レジスト膜開口部)のみに不純物を拡散させることにより、気圧検出部Rpおよび加速度検出部Raを形成してもよい。この場合には、気圧検出部Rpおよび加速度検出部Raが基板50の上面と同一面となり、段差がなくなるので、気圧検出部Rpおよび加速度検出部Raに接続する配線の電気的接続が容易となる。
20 重錘体
21 第1蓋部
22 主部
22a 上面
22b 下面
22c 貫通孔
23 第2蓋部
24 取付部
25 密閉空間
30 接続体
50 基板
50a 第1層
50b 第2層
50c 第3層
100 センサ
Claims (5)
- 重錘体と、上面視して前記重錘体を囲むように位置する枠体と、前記重錘体と前記枠体との上面側をそれぞれ接続する可撓性を有する接続体と、圧力検出部と、加速度検出部とを有するセンサであって、
前記重錘体は、
上面から下面まで貫通する貫通孔を有する主部と、
前記主部の上面に前記貫通孔の外周を囲むように接続された取付部と、
前記取付部に前記貫通孔を塞ぐように接続された可撓性を有する第1蓋部と、
前記主部の下面に前記貫通孔を塞ぐように配置された、前記第1蓋部に比べて外部からの力に対して変形量が小さく、前記主部よりも質量が小さい第2蓋部とを含み、
前記圧力検出部は、前記第1蓋部に配置されて、前記主部、前記第1蓋部、前記第2蓋部および前記取付部で形成された密閉空間と外界との気圧差によって生じる前記第1蓋部の撓みを電気信号として検出し、
前記加速度検出部は、前記接続体に配置されて、前記重錘体に加えられた加速度によって生じる前記接続体の撓みを電気信号として検出する、センサ。 - 前記重錘体は、平面視で、その重心が前記貫通孔と重なり、前記取付部の内側に比べて前記取付部の外側が重くなるように偏った重量分布を有する、請求項1記載のセンサ。
- 前記第1蓋部は、前記接続体と一体的に形成されている、請求項1または2に記載のセンサ。
- 前記第2蓋部は、前記主部と一体的に形成されている、請求項1乃至3のいずれかに記載のセンサ。
- 基板の上面にそれぞれピエゾ抵抗からなる圧力検出部および加速度検出部を形成する検出部形成工程と、
前記基板を加工することにより、前記圧力検出部を有する重錘体、平面視で前記重錘体を囲む枠体、および前記加速度検出部を有し、一方端が前記枠体に他方端が前記重錘体に連結される接続体を形成する加工工程とを有し、
前記加工工程において、前記重錘体を形成する工程が、
前記基板の前記圧力検出部が形成された側と反対側の面に凹部を形成し、前記圧力検出部が形成された領域と重なる前記凹部の底面が可撓性を有するように前記基板の一部を薄層化して第1蓋部とする工程と、
前記第1蓋部から続く、前記凹部の側壁の一部を、前記第1蓋部に接続された取付部および前記取付部に接続された主部とする工程と、
内部に密閉空間が形成されるように前記凹部を塞ぐ、前記主部よりも質量が小さい第2蓋部を配置する工程とを含む、センサの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014013026 | 2014-01-28 | ||
JP2014013026 | 2014-01-28 | ||
PCT/JP2015/052022 WO2015115365A1 (ja) | 2014-01-28 | 2015-01-26 | センサおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2015115365A1 JPWO2015115365A1 (ja) | 2017-03-23 |
JP6258977B2 true JP6258977B2 (ja) | 2018-01-10 |
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JP2015559930A Active JP6258977B2 (ja) | 2014-01-28 | 2015-01-26 | センサおよびその製造方法 |
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US (1) | US20160341759A1 (ja) |
JP (1) | JP6258977B2 (ja) |
WO (1) | WO2015115365A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3368923B1 (en) | 2015-10-30 | 2023-12-27 | TGS-NOPEC Geophysical Company | Multi-axis, single mass accelerometer |
US11262256B2 (en) * | 2017-06-22 | 2022-03-01 | Ezmems Ltd. | Sensor elements on thin foil/films |
US10725202B2 (en) * | 2017-07-21 | 2020-07-28 | Baker Hughes, A Ge Company, Llc | Downhole electronics package having integrated components formed by layer deposition |
US11186481B2 (en) | 2017-11-30 | 2021-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensor device and manufacturing method thereof |
WO2020056216A1 (en) * | 2018-09-13 | 2020-03-19 | Ion Geophysical Corporation | Multi-axis, single mass accelerometer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4335545B2 (ja) * | 2003-02-17 | 2009-09-30 | 株式会社ワコー | 圧力と加速度との双方を検出するセンサおよびその製造方法 |
US7487681B1 (en) * | 2006-08-06 | 2009-02-10 | Silicon Microstructures Inc. | Pressure sensor adjustment using backside mask |
TWI414478B (zh) * | 2010-09-09 | 2013-11-11 | Domintech Co Ltd | 可同時量測加速度及壓力之微機電感測器 |
TWI518804B (zh) * | 2012-02-14 | 2016-01-21 | Asia Pacific Microsystems Inc | Monolithic compound sensor and its package |
JP5890712B2 (ja) * | 2012-03-16 | 2016-03-22 | ラピスセミコンダクタ株式会社 | 半導体圧力センサ及びその製造方法、並びに圧力検出装置 |
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2015
- 2015-01-26 WO PCT/JP2015/052022 patent/WO2015115365A1/ja active Application Filing
- 2015-01-26 JP JP2015559930A patent/JP6258977B2/ja active Active
- 2015-01-26 US US15/114,369 patent/US20160341759A1/en not_active Abandoned
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JPWO2015115365A1 (ja) | 2017-03-23 |
US20160341759A1 (en) | 2016-11-24 |
WO2015115365A1 (ja) | 2015-08-06 |
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