WO2017000326A1 - 一种制作柔性oled显示器件的方法 - Google Patents

一种制作柔性oled显示器件的方法 Download PDF

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Publication number
WO2017000326A1
WO2017000326A1 PCT/CN2015/084284 CN2015084284W WO2017000326A1 WO 2017000326 A1 WO2017000326 A1 WO 2017000326A1 CN 2015084284 W CN2015084284 W CN 2015084284W WO 2017000326 A1 WO2017000326 A1 WO 2017000326A1
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Prior art keywords
display device
oled display
ferromagnetic material
flexible oled
bearing surface
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English (en)
French (fr)
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徐超
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/778,262 priority Critical patent/US9991476B2/en
Publication of WO2017000326A1 publication Critical patent/WO2017000326A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method of fabricating an OLED display device, and more particularly to a method of fabricating a flexible OLED display device.
  • OLED Organic Light-Emitting Diode
  • the flexible OLED display device is a flexible structure organic thin film electroluminescent device.
  • the flexible OLED display device includes a flexible substrate and an organic light emitting diode.
  • the flexible OLED display device is based on a flexible substrate, and the thin film-shaped organic light emitting diode is disposed on the flexible substrate.
  • the flexible substrate In the process of preparing a flexible OLED display device, since the flexible substrate is easily bent, it is necessary to adhere the flexible substrate to a flat glass substrate, and the glass substrate supports the flexible substrate. Thus, in the process of processing the organic light emitting diode on the flexible substrate, the flexible substrate can be kept flat at all times.
  • the flexible OLED display device After the flexible OLED display device is fabricated, it is necessary to peel off the flexible OLED display device from the glass substrate. Since the flexible substrate and the glass substrate are bonded by a superglue, the flexible OLED display device is difficult to peel off from the glass substrate. In addition, before the flexible OLED display device is peeled off from the glass substrate, it is also necessary to simultaneously cut the flexible OLED display device and the glass substrate to cut the flexible OLED display device into a specific size. Thus, each time a flexible OLED display device is produced, a glass substrate is consumed.
  • the technical problem to be solved by the present invention is the problem that the flexible substrate is difficult to fix and maintain straight during the process of fabricating the flexible OLED display device.
  • the present invention provides a method of fabricating a flexible OLED display device, which includes the following steps:
  • the ferromagnetic material layer is abutted against the flat bearing surface, and a gravitational magnetic force directed to the bearing surface is applied to the ferromagnetic material layer.
  • a magnet is placed on the side of the bearing surface facing away from the layer of ferromagnetic material, and the magnet applies a gravitational magnetic force to the layer of ferromagnetic material.
  • the magnet is an electromagnet.
  • the load bearing surface is the face of the cooling plate of the vacuum evaporation machine.
  • the thickness of the layer of ferromagnetic material is uniform.
  • the gravitational magnetic force is evenly distributed over the layer of ferromagnetic material.
  • the gravitational force is perpendicular to the bearing surface.
  • the method further includes forming an organic light emitting diode on another surface of the flexible substrate.
  • the flexible OLED display device is a bottom-emitting flexible OLED display device that removes the ferromagnetic material layer after forming the organic light-emitting diode.
  • the flexible OLED display device is a top emitting flexible OLED display device.
  • the ferromagnetic material layer interacts with the magnetic field and is subjected to a gravitational magnetic force directed to the bearing surface, which causes the ferromagnetic material layer to be adsorbed onto the bearing surface. After the ferromagnetic material layer abuts the flat bearing surface, the flexible substrate is flattened. In addition, the ferromagnetic material layer is brought into close contact with the bearing surface such that the two are relatively fixed, whereby the flexible substrate is fixed on the bearing surface. In addition, since the magnitude of the gravitational magnetic force is easy to control, it is also very convenient to remove the flexible substrate from the bearing surface.
  • FIG. 1 shows a flow chart of a method of fabricating a flexible OLED display device in one embodiment of the invention
  • Figure 2 is a schematic view showing the structure of a vacuum evaporation machine in one embodiment of the present invention
  • FIG. 3 shows a schematic structural view of a flexible OLED display device in one embodiment of the present invention.
  • a method of fabricating a flexible OLED display device 100 is described in the present embodiment, which includes the following steps:
  • S10 forming a first conductive layer on one surface of the flexible substrate 1, that is, on the first surface.
  • the first conductive layer is patterned to form a plurality of mutually parallel anode lines 31.
  • the flexible substrate 1 may be a resin substrate.
  • the first conductive layer may be formed on the first surface of the flexible substrate 1 by a physical vapor deposition method.
  • the physical vapor deposition method may be, for example, a sputtering deposition process or a vacuum evaporation process.
  • the first conductive layer is typically made of a transparent conductive material.
  • the first conductive layer may be, for example, an indium tin oxide film.
  • the first conductive layer may be photolithographically processed using a photolithography process to form a plurality of anode lines 31.
  • the plurality of anode wires 31 are parallel to each other.
  • the adjacent two anode wires 31 are spaced apart from each other.
  • the first conductive layer is typically used as an anode for the organic light emitting diode.
  • a surface treatment is also performed on the surface of the first conductive layer facing away from the flexible substrate 1 to improve the functional function of the first conductive layer.
  • This can reduce the injection barrier of holes.
  • the surface treatment method may be, for example, ultraviolet-ozone treatment or plasma treatment. These surface treatment methods can also reduce the surface roughness of the first conductive layer.
  • an organic thin film is formed by an evaporation process. It specifically includes S21, S22, S23, S24, and S25.
  • the ferromagnetic material layer 2 may be formed on the second plate surface of the flexible substrate 1 (ie, the plate surface opposite to the first plate surface).
  • the ferromagnetic material layer 2 may be formed on the second plate surface of the flexible substrate 1 by a physical vapor deposition method.
  • the material forming the ferromagnetic material layer 2 includes a ferromagnetic material.
  • the ferromagnetic material can be, for example, iron, cobalt or nickel.
  • the physical vapor deposition method may be, for example, a sputtering deposition process or a vacuum evaporation process.
  • the ferromagnetic material layer 2 is set to be very thin, the strength of the ferromagnetic material layer 2 is very small, and the strength change of the flexible substrate 1 to which the ferromagnetic material layer 2 is attached is small.
  • the thickness of the ferromagnetic material layer 2 is uniform.
  • a ferromagnetic material layer 2 may be formed on the second panel by a coating method.
  • the bearing surface is generally the bearing surface of the stage of the processing equipment.
  • the vacuum vapor deposition machine 10 includes a vacuum chamber 6 and a carrier plate 4, an electromagnet 5, and an evaporation source 7, both of which are disposed in the vacuum chamber 6.
  • the carrier plate 4 serves as a stage for the vacuum vapor deposition machine 10.
  • the carrier plate 4 is constructed in a substantially plate shape.
  • the carrier plate 4 is horizontally arranged.
  • the downward facing surface of the carrier plate 4 is the bearing surface 41.
  • the electromagnet 5 is disposed above the carrier plate 4.
  • the evaporation source 7 is disposed directly below the carrier plate 4.
  • the outlet of the evaporation source 7 faces upward.
  • the electromagnet 5 is activated, the second plate of the flexible substrate 1 is faced upward, and then the flexible substrate 1 is laid on the bearing surface 41.
  • the magnetic material layer is subjected to a gravitational magnetic force from the electromagnet 5, which is directed to the carrier plate 4.
  • the flexible substrate 1 is fixed to the bearing surface 41 of the carrier plate 4. Since the bearing surface 41 is flat, the flexible substrate 1 is flattened on the bearing surface 41 during the process of bonding the magnetic material layer to the bearing surface 41.
  • a permanent magnet in the magnet can be used here.
  • the permanent magnet is preferably a magnetic steel.
  • the electromagnet 5 is disposed directly above the ferromagnetic material layer 2 such that the above-mentioned gravitational magnetic force is perpendicular to the bearing surface 41.
  • the flexible substrate 1 can be more firmly fixed to the carrying surface 41.
  • the carrier plate 4 is a cooling plate of the vacuum evaporation machine 10.
  • the flexible substrate 1 transfers heat to the cooling plate, which can prevent the flexible substrate 1 from being thermally expanded or softened during the evaporation process.
  • the electromagnet 5 is provided in plurality, and the plurality of electromagnets 5 are evenly distributed above the carrier plate 4.
  • the gravitational magnetic force received by the ferromagnetic material layer 2 is uniformly distributed on the ferromagnetic material layer 2.
  • the flexible substrate 1 can be made flatter.
  • S23 forming a hole transport layer on the first conductive layer, and patterning the hole transport layer to form a plurality of hole transport blocks 32 covering the plurality of anode lines 31 and arranged in an array.
  • a hole transporting material is evaporated onto the first conductive layer to form a hole transporting layer.
  • a first evaporation mask 8 is disposed between the first conductive layer and the evaporation source 7.
  • the first evaporation mask 8 has a matrix array of meshes. The mesh is aligned with the anode line 31.
  • the vacuum chamber 6 is evacuated.
  • the evaporation source 7 is then activated and the evaporation source 7 heats the hole transport material to convert the air transport material to a gaseous state.
  • the gaseous air transport material is deposited on the anode line 31 through the mesh of the first evaporation mask 8, forming a hole transport block 32.
  • a plurality of hole transporting blocks 32 are formed on the plurality of anode wires 31.
  • the plurality of hole transporting blocks 32 are arranged in a matrix.
  • the hole transporting material may be m-MTDATA.
  • the luminescent material is evaporated onto the hole transport layer to form a luminescent layer.
  • a first evaporation mask 8 is provided between the hole transport layer and the evaporation source 7.
  • the mesh on the first evaporation mask 8 is aligned with the hole transport block 32.
  • the vacuum chamber 6 is evacuated.
  • the evaporation source 7 is then activated, and the evaporation source 7 heats the organic light-emitting material to convert the organic light-emitting material into a gaseous state.
  • the gaseous organic luminescent material is deposited on the hole transport block 32 through the mesh of the first evaporation mask 8, forming a plurality of light-emitting blocks 33.
  • a light-emitting block 33 is overlaid on a hole transport block 32.
  • the plurality of light-emitting blocks 33 are also arranged in a matrix.
  • the organic luminescent material may be an organometallic complex.
  • the organometallic complex may be, for example, 8-hydroxyquinoline aluminum (Alq3) or 8-hydroxyquinolate gallium (Gaq3).
  • S25 forming an electron transport layer on the light-emitting layer, and patterning the electron transport layer to form a plurality of electron transport blocks 34 covering the light-emitting blocks 33.
  • the electron transport block 34 is in one-to-one correspondence with the light-emitting blocks 33.
  • an electron transporting material is vapor-deposited onto the light-emitting layer to form an electron transport layer.
  • a first vapor deposition mask 8 is provided between the light-emitting layer and the evaporation source 7.
  • the mesh on the first evaporation mask 8 is aligned with the block of the light-emitting block 33.
  • the vacuum chamber 6 is evacuated.
  • the evaporation source 7 is then activated, and the evaporation source 7 heats the electron transport material to convert the electron transport material into a gaseous state.
  • the gaseous electron transport material is deposited on the light-emitting block 33 through the mesh of the first evaporation mask 8, forming an electron transport block 34.
  • the plurality of electron transport blocks 34 are also arranged in a matrix.
  • the electron transporting material may be a compound of 1,3,4-oxadiazole (OXD).
  • S30 forming a second conductive layer on the electron transport layer, and patterning the second conductive layer to form a plurality of cathode lines 35 parallel to each other and perpendicular to the anode line 31, each cathode line 35 covering a plurality of electron transports Block 34.
  • the adjacent two cathode lines 35 are spaced apart from each other.
  • the second evaporation mask 9 is disposed between the electron transport layer and the evaporation source 7.
  • the cathode line 35 mask and the flexible substrate 1 are parallel to each other.
  • a mesh pattern of the cathode line 35 is disposed on the mask of the cathode line 35.
  • step S30 When step S30 is completed, a plurality of organic light emitting diodes 3 arranged in a matrix are formed on the first plate surface of the flexible substrate 1. As shown in FIG. 3, a single organic light-emitting diode 3 includes an anode stacked in this order. Line 31, hole transport block 32, light-emitting block 33, electron transport block 34, and cathode line 35.
  • the magnetic material layer is attached to the bearing surface 41 by the gravitational magnetic force, and the worker can conveniently peel the flexible substrate 1 from the bearing surface 41. If the gravitational magnetic force is generated by the interaction of the magnetic material layer and the electromagnet 5, the electromagnet 5 can be turned off before the step S40 to eliminate the gravitational magnetic force, and the flexible substrate 1 can be removed more easily. Of course, it is also possible to increase the distance between the magnet and the ferromagnetic material layer 2 to weaken the gravitational magnetic force.
  • the ferromagnetic material layer 2 can be removed by etching the ferromagnetic material layer 2 with an etching solution.
  • the etching solution may be a strong acid such as dilute hydrochloric acid or dilute sulfuric acid.
  • the flexible OLED display device 100 is a bottom-emitting OLED display device, that is, when the light emitted from the organic light-emitting diode 3 needs to be emitted from the flexible substrate, it is generally necessary to remove the ferromagnetic material layer 2.
  • flexible OLED display device 100 is a top emitting OLED display device.
  • the light emitting direction of the top-emitting flexible OLED display device 100 is away from the ferromagnetic material layer 2, so step S50 may be omitted in the process of fabricating the top-emitting flexible OLED display device 100 using this method.
  • the method is particularly suitable for making a top emitting flexible OLED display device 100.
  • step S21 is performed first to form a ferromagnetic material layer 2 on one surface of the flexible substrate 1, and then step S10 is performed to form a first conductive layer on the other surface of the flexible substrate 1. .
  • the flexible substrate 1 is first flattened on the flat bearing surface by the gravitational magnetic force, and the ferromagnetic material layer 2 abuts against the bearing surface.
  • the first conductive layer is then sputtered or evaporated on the surface of the flexible substrate 1 facing away from the ferromagnetic material layer 2.
  • steps S23, S24, S25, S30 are processed on different devices. These devices may be multiple vacuum evaporation machines 10. Thus, the film layer formed in the subsequent step is not contaminated by the residual material in the apparatus after the film layer is formed in the previous step.
  • steps S23, S24, S25, and S30 are sequentially performed, and steps S40 and S22 are sequentially repeated between the two adjacent steps in steps S23, S24, S25, and S30.
  • steps S40 and S22 are sequentially repeated between the two adjacent steps in steps S23, S24, S25, and S30.
  • the flexible substrate 1 can be taken out from one device and fixed on another device. This process is simple in process and convenient in operation.

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  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种制作柔性OLED显示器件（100）的方法，其包括以下步骤：在柔性基板（1）的一个板面上形成铁磁性材料层（2）；将铁磁性材料层（2）抵接平整的承载面，并对铁磁性材料层（2）施加指向所述承载面的引力磁力。铁磁性材料层（2）在引力磁力的作用下与平整的承载面抵接，使得柔性基板（1）被展平。同时，柔性基板（1）被固定在承载面上。

Description

一种制作柔性OLED显示器件的方法
相关申请的交叉引用
本申请要求享有于2015年07月02日提交的名称为“一种制作柔性OLED显示器件的方法”的中国专利申请CN 201510383409.0的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及一种OLED显示器件的制作方法，特别涉及一种制作柔性OLED显示器件的方法。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示器件的主要优点包括自发光、全彩色显示、高亮度、高对比度、低电压、低功耗、轻薄、高发光效率、快速响应、宽视角、单片结构、加工工艺简单以及成本低等。
柔性OLED显示器件是一种柔性结构的有机薄膜电致发光器件。柔性OLED显示器件包括柔性基板和有机发光二极管。柔性OLED显示器件以柔性基板为基底，薄膜状的有机发光二极管设置在柔性基板上。
在制备柔性OLED显示器件的过程中，由于柔性基板容易弯折，需要将柔性基板粘贴在平板状的玻璃基板上，玻璃基板支撑起柔性基板。这样，在柔性基板上加工出有机发光二极管过程中，柔性基板能始终保持平整。
然而，柔性OLED显示器件制成后，需要将柔性OLED显示器件从玻璃基板上剥离下来。由于柔性基板与玻璃基板之间采用强力胶进行粘接，柔性OLED显示器件难以从玻璃基板上剥离下来。另外，在将柔性OLED显示器件从玻璃基板上剥离下来之前，还需要对柔性OLED显示器件和玻璃基板同时进行切割以将柔性OLED显示器件切割成特定尺寸。这样，每生产出一个柔性OLED显示器件，就会消耗一块玻璃基板。
发明内容
本发明所要解决的技术问题是制作柔性OLED显示器件的过程中，柔性基板难以固定和保持平直的问题。
针对上述技术问题本发明提出了一种制作柔性OLED显示器件的方法，其包括以下步骤：
在柔性基板的一个板面上形成铁磁性材料层；
将铁磁性材料层抵接平整的承载面，并对铁磁性材料层施加指向承载面的引力磁力。
在一个具体的实施例中，在承载面背离铁磁性材料层一侧设置磁铁，磁铁对铁磁性材料层施加引力磁力。
在一个具体的实施例中，磁铁为电磁铁。
在一个具体的实施例中，承载面为真空蒸镀机的冷却板的板面。
在一个具体的实施例中，铁磁性材料层的厚度均匀。
在一个具体的实施例中，引力磁力在铁磁性材料层上分布均匀。
在一个具体的实施例中，引力磁力垂直于承载面。
在一个具体的实施例中，方法还包括在柔性基板的另一板面形成有机发光二极管。
在一个具体的实施例中，柔性OLED显示器件为底发射的柔性OLED显示器件，在形成有机发光二级管后，除去铁磁性材料层。
在一个具体的实施例中，柔性OLED显示器件为顶发射的柔性OLED显示器件。
铁磁性材料层与磁场相互作用而受到指向承载面的引力磁力，这使得铁磁性材料层被吸附到承载面上。铁磁性材料层与平整的承载面抵接后，柔性基板被展平。另外，铁磁性材料层与承载面紧贴在一起而使得这两者相对固定，由此，该柔性基板被固定在承载面上。另外，由于引力磁力的大小便于控制，从承载面上取下柔性基板上也非常方便。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1显示了本发明的一个实施例中的一种制作柔性OLED显示器件的方法的流程图；
图2显示了本发明的一个实施例中的一种真空蒸镀机的结构示意图；
图3显示了本发明的一个实施例中的一种柔性OLED显示器件的结构示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例绘制。
具体实施方式
下面将结合附图对本发明作进一步说明。
如图1所示，在本实施方式中介绍了一种制作柔性OLED显示器件100的方法，其包括如下步骤：
S10：在柔性基板1的一个板面、即第一板面上形成第一导电层。对第一导电层进行图案化处理形成多根相互平行的阳极线31。
柔性基板1可以是树脂基板。通常可以采用物理气相沉积的方法在柔性基板1的第一板面上形成第一导电层。该物理气相沉积的方法例如可以是溅镀沉积工艺或真空蒸镀工艺。第一导电层通常由透明的导电材料制成。第一导电层例如可以是氧化铟锡膜。可以采用光刻工艺对第一导电层进行光刻，以形成多根阳极线31。多根阳极线31相互平行。相邻两根阳极线31之间相互分隔开。第一导电层通常作为有机发光二极管的为阳极。
优选地，在形成第一导电层后，还在第一导电层背离柔性基板1的表面进行表面处理，以提高第一导电层的功能函数。这样就可以减小空穴的注入势垒。表面处理的方法例如可以是紫外线—臭氧处理或等离子体处理等。这些表面处理的方法还可以使得第一导电层的表面粗糙度降低。
S20：在第一导电层上形成有机薄膜。在本实施中，采用蒸镀工艺形成有机薄膜。其具体包括S21、S22、S23、S24和S25。
S21：在柔性基板1的第二板面(即与第一板面相对的板面)上形成铁磁性材料层2。可以采用物理气相沉积的方法在柔性基板1的第二板面上形成铁磁性材料层2。形成铁磁性材料层2的材料包括铁磁性材料。铁磁性材料例如可以是铁、钴或镍。该物理气相沉积的方法例如可以是溅镀沉积工艺或真空蒸镀工艺。铁磁性材料层2设置得非常薄，这样的铁磁性材料层2的强度非常小，附着有铁磁性材料层2的柔性基板1的强度变化小。优选地，铁磁性材料层2的厚度均匀。另外还可以采用涂布的方法在第二面板上形成铁磁性材料层2。
S22：将柔性基板1平铺在平整的承载面上，柔性基板1的第二板面朝向承载面，对铁磁性材料层2施加指向承载面的引力磁力以使得柔性基板1平整地展平并与承载面相对固定。该承载面一般是加工设备的载台的承载面。
图2所示，真空蒸镀机10包括真空室6以及均设置在真空室6内的承载板4、电磁铁5和蒸发源7。承载板4作为真空蒸镀机10的载台。承载板4构造为大致的板状。承载板4水平设置。承载板4的朝下的表面为承载面41。电磁铁5设置在承载板4的上方。蒸发源7设置在承载板4的正下方。蒸发源7的出口朝上。
启动电磁铁5，将柔性基板1的第二板面朝上，然后将柔性基板1平铺在承载面41上。磁性材料层受到来自电磁铁5的引力磁力，这个引力磁力指向承载板4。这样，就将柔性基板1固定在承载板4的承载面41上。由于承载面41为平面，柔性基板1在磁性材料层与承载面41贴合的过程中在承载面41上展平。显然的，这里还可以采用磁铁中的永久磁铁来代替电磁铁5。该永磁磁铁优选为磁钢。
优选地，将电磁铁5设置在铁磁性材料层2的正上方，以使得上述引力磁力垂直于承载面41。由此，柔性基板1可以更牢固的固定在承载面41上。
优选地，承载板4为真空蒸镀机10的冷却板。柔性基板1将热量传递到冷却板，这样可以避免柔性基板1在蒸镀的过程中受热膨胀或受热变软。
优选地，电磁铁5设置有多个，多个电磁铁5均匀分布在承载板4的上方。这样，铁磁性材料层2所受到的引力磁力在铁磁性材料层2上均匀分布。由此，柔性基板1能更加平整。
S23：在第一导电层上形成空穴传输层，并对空穴传输层进行图案化处理以形成覆盖在多根阳极线31上的且呈阵列排布的多个空穴传输块32。
在本实施例中，将空穴传输材料蒸镀到第一导电层上形成空穴传输层。具体地，在第一导电层与蒸发源7之间设置第一蒸镀掩膜8。第一蒸镀掩膜8上具有矩阵式排列的网孔。网孔与阳极线31对应对齐。将空穴传输材料放置到蒸发源7内后，对真空室6抽真空。然后启动蒸发源7，蒸发源7对空穴传输材料加热，以将空气传输材料转变成气态。气态的空气传输材料穿过第一蒸镀掩膜8的网孔在阳极线31上沉积，形成空穴传输块32。这样就在多根阳极线31上形成了多个空穴传输块32。多个空穴传输块32呈矩阵排列。空穴传输材料可以是m-MTDATA。
S24：在空穴传输层上形成发光层，并对发光层进行图案化处理形成的多个覆盖在空穴传输块32上的发光块33，发光块33与空穴传输块32一一对应。
在本实施例中，将发光材料蒸镀到空穴传输层上形成发光层。具体地，在空穴传输层与蒸发源7之间设置第一蒸镀掩膜8。将第一蒸镀掩膜8上的网孔与空穴传输块32对应对齐。将有机发光材料放置到蒸发源7内后，对真空室6抽真空。然后启动蒸发源7，蒸发源7对有机发光材料加热，以将有机发光材料转变成气态。气态的有机发光材料穿过第一蒸镀掩膜8的网孔在空穴传输块32上沉积，形成多个发光块33。一个发光块33覆盖在一个空穴传输块32上。这样多个发光块33也呈矩阵排列。有机发光材料可以是有机金属配合物。该有机金属配合物例如可以是8-羟基喹啉铝(Alq3)或8-羟基喹啉镓(Gaq3)。
S25：在发光层上形成电子传输层，并对电子传输层进行图案化处理形成多个覆盖在发光块33上的电子传输块34，电子传输块34与发光块33一一对应。
在本实施例中，将电子传输材料蒸镀到发光层上形成电子传输层。具体地，在发光层与蒸发源7之间设置第一蒸镀掩膜8。将第一蒸镀掩膜8上的网孔与发光块33块对应对齐。将电子传输材料放置到蒸发源7内后，对真空室6抽真空。然后启动蒸发源7，蒸发源7对电子传输材料加热，以将电子传输材料转变成气态。气态的电子传输材料穿过第一蒸镀掩膜8的网孔在发光块33上沉积，形成电子传输块34。这样多个电子传输块34也呈矩阵排列。电子传输材料可以是噁二唑类(1，3，4-oxadiazole,OXD)化合物。
S30：在电子传输层上形成第二导电层，并对第二导电层进行图案化处理形成多根相互平行的且垂直于阳极线31的阴极线35，每根阴极线35覆盖多个电子传输块34。相邻两根阴极线35之间相互分隔开来。
将第二蒸镀掩膜9设置在电子传输层与蒸发源7之间。阴极线35掩膜与柔性基板1相互平行。阴极线35掩膜上设置有阴极线35图案的网孔。将金属材料放置到蒸发源7内后，对真空室6抽真空。然后启动蒸发源7，蒸发源7对金属材料加热，以将金属材料转变成气态。该金属材料例如是镁银合金。气态的金属材料穿过第二蒸镀掩膜9的网孔在电子传输层上沉积出阴极线35。阴极线35连接多个电子传输块34。
当完成第S30步以后，就在柔性基板1的第一板面上形成了多个呈矩阵排列的有机发光二极管3。如图3所示，单个有机发光二级管3包括依次层叠的阳极 线31、空穴传输块32、发光块33、电子传输块34以及阴极线35。
S40：将柔性基板1从承载面41上取下。
磁性材料层受到引力磁力而附着在承载面41上，工人可以很方便地将柔性基板1从承载面41上揭下来。该引力磁力如果是由磁性材料层与电磁铁5相互作用而产生的，还可以在步骤S40前先关闭电磁铁5以消除该引力磁力，进而更容易地将柔性基板1取下来。当然，还可以采用增大磁铁与铁磁性材料层2之间的距离来削弱引力磁力。
S50：除去铁磁性材料层2。
可以采用刻蚀液腐蚀铁磁性材料层2而将铁磁性材料层2去除。刻蚀液可以是强酸，例如可以是稀盐酸或稀硫酸。柔性OLED显示器件100为底发射OLED显示器件，即有机发光二极管3发出的光线需要从穿过柔性基板而射出时，一般需要将铁磁性材料层2除去。
在一个优选的实施例中，柔性OLED显示器件100是顶发射OLED显示器件。顶发射的柔性OLED显示器件100的发光方向为背向铁磁性材料层2，所以使用该方法制作顶发射的柔性OLED显示器件100的过程中可以省略步骤S50。由此，该方法特别适合制作顶发射的柔性OLED显示器件100。
在一个优选的实施例中，先进行步骤S21以在柔性基板1的一个板面上形成铁磁性材料层2，然后再进行步骤S10以在柔性基板1的另一个板面上形成第一导电层。
在进行步骤S10的过程中，先利用引力磁力将柔性基板1展平在平整的承载面上，并且该铁磁性材料层2抵接于该承载面。然后在柔性基板1背离所述铁磁性材料层2的板面上溅镀或蒸镀第一导电层。
在一个优选的实施例中，步骤S23、S24、S25、S30在不同的设备上进行加工。这些设备可以是多台真空蒸镀机10。这样，后续步骤中形成的膜层不会被在其前一步骤中形成膜层后在设备中残余的材料污染。
由于在不同的设备上进行加工，依次进行的步骤S23、S24、S25、S30时，在步骤S23、S24、S25、S30中相邻的两个步骤之间依次重复进行步骤S40、S22。这样，可以将柔性基板1从一台设备上取出而固定另一台设备上，这个过程工艺简单、操作方便。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的 情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (20)

  1. 一种制作柔性OLED显示器件的方法，包括以下步骤：
    在柔性基板的一个板面上形成铁磁性材料层；
    将铁磁性材料层抵接平整的承载面，并对铁磁性材料层施加指向所述承载面的引力磁力。
  2. 根据权利要求1所述的方法，其中，在所述承载面背离所述铁磁性材料层一侧设置磁铁，所述磁铁对所述铁磁性材料层施加所述引力磁力。
  3. 根据权利要求2所述的方法，其中，所述磁铁为电磁铁。
  4. 根据权利要求1所述的方法，其中，所述承载面为真空蒸镀机的冷却板的板面。
  5. 根据权利要求1所述的方法，其中，所述铁磁性材料层的厚度均匀。
  6. 根据权利要求1所述的方法，其中，所述引力磁力在所述铁磁性材料层上分布均匀。
  7. 根据权利要求2所述的方法，其中，所述引力磁力在所述铁磁性材料层上分布均匀。
  8. 根据权利要求3所述的方法，其中，所述引力磁力在所述铁磁性材料层上分布均匀。
  9. 根据权利要求1所述的方法，其中，所述引力磁力垂直于所述承载面。
  10. 根据权利要求2所述的方法，其中，所述引力磁力垂直于所述承载面。
  11. 根据权利要求3所述的方法，其中，所述引力磁力垂直于所述承载面。
  12. 根据权利要求1所述的方法，其中，所述方法还包括在所述柔性基板的另一板面形成有机发光二极管。
  13. 根据权利要求2所述的方法，其中，所述方法还包括在所述柔性基板的另一板面形成有机发光二极管。
  14. 根据权利要求3所述的方法，其中，所述方法还包括在所述柔性基板的另一板面形成有机发光二极管。
  15. 根据权利要求12所述的方法，其中，所述柔性OLED显示器件为底发射的柔性OLED显示器件，在形成所述有机发光二级管后，除去所述铁磁性材料层。
  16. 根据权利要求13所述的方法，其中，所述柔性OLED显示器件为底发射的柔性OLED显示器件，在形成所述有机发光二级管后，除去所述铁磁性材料层。
  17. 根据权利要求14所述的方法，其中，所述柔性OLED显示器件为底发射的柔性OLED显示器件，在形成所述有机发光二级管后，除去所述铁磁性材料层。
  18. 根据权利要求12所述的方法，其中，所述柔性OLED显示器件为顶发射的柔性OLED显示器件。
  19. 根据权利要求13所述的方法，其中，所述柔性OLED显示器件为顶发射的柔性OLED显示器件。
  20. 根据权利要求14所述的方法，其中，所述柔性OLED显示器件为顶发射的柔性OLED显示器件。
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