WO2016194838A1 - Procédé permettant de former un motif inverse, composition pour une inversion d'image et procédé permettant de fabriquer un dispositif électronique - Google Patents

Procédé permettant de former un motif inverse, composition pour une inversion d'image et procédé permettant de fabriquer un dispositif électronique Download PDF

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Publication number
WO2016194838A1
WO2016194838A1 PCT/JP2016/065784 JP2016065784W WO2016194838A1 WO 2016194838 A1 WO2016194838 A1 WO 2016194838A1 JP 2016065784 W JP2016065784 W JP 2016065784W WO 2016194838 A1 WO2016194838 A1 WO 2016194838A1
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group
sensitive
resin
composition
pattern
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PCT/JP2016/065784
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English (en)
Japanese (ja)
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啓太 加藤
直紘 丹呉
研由 後藤
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富士フイルム株式会社
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C08F12/24—Phenols or alcohols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a reverse pattern forming method and an image reversal composition for use in the method. More specifically, the present invention relates to a reverse pattern forming method suitable for semiconductor manufacturing processes such as IC (Integrated Circuit), circuit boards such as liquid crystals and thermal heads, and other photofabrication lithography processes, and the method thereof. The present invention relates to an image reversal composition for use in the present invention. The present invention also relates to a method for manufacturing an electronic device including the reverse pattern forming method.
  • a pattern formation method using chemical amplification has been used to compensate for sensitivity reduction due to light absorption.
  • a photoacid generator contained in an exposed portion is decomposed by light irradiation to generate an acid.
  • the alkali-insoluble group contained in the actinic ray-sensitive or radiation-sensitive resin composition is changed to an alkali-soluble group by the catalytic action of the acid generated in the post-exposure baking (PEB) process.
  • PEB post-exposure baking
  • development is performed using, for example, an alkaline solution. Thereby, an exposed part is removed and a desired pattern is obtained.
  • TMAH tetramethylammonium hydroxide aqueous solution
  • the exposure light source has become shorter and the projection lens has a higher numerical aperture (high NA).
  • high NA numerical aperture
  • an exposure machine using an ArF excimer laser having a wavelength of 193 nm as a light source has been developed.
  • immersion liquid a liquid having a high refractive index
  • EUV lithography in which exposure is performed with ultraviolet light having a shorter wavelength (13.5 nm) has also been proposed.
  • the present invention can form a narrow inversion pattern such as a line pattern or a dot pattern without causing the problem of pattern collapse, and has excellent workability of a film to be processed when used as a mask. It is an object of the present invention to provide a reversal pattern forming method capable of forming a narrow reversal pattern. Another object of the present invention is to provide a composition for image reversal that can be suitably used in the reversal pattern forming method, and to provide a method for manufacturing an electronic device including the reversal pattern formation method.
  • the present invention is as follows. [1] (A) A resin whose polarity is changed by the action of an acid and whose solubility in an organic solvent is reduced, a compound which generates an acid upon irradiation with actinic rays or radiation, and an actinic ray-sensitive or radiation-sensitive resin composition containing the solvent Forming an actinic ray-sensitive or radiation-sensitive film using (B) a step of exposing the actinic ray-sensitive or radiation-sensitive film; (C) developing the exposed actinic ray-sensitive or radiation-sensitive film with a developer containing an organic solvent, thereby forming a negative pattern including a remaining film portion and a space portion; (D) applying an image reversal composition on the negative pattern and embedding the image reversal composition in the space; and (e) removing the residual film portion of the negative pattern by etching. And a reverse pattern forming method including a step of obtaining a reverse pattern, The image reversal composition contains a resin
  • the present invention it is possible to form a narrow inversion pattern such as a line pattern or a dot pattern without causing a problem of pattern collapse, and excellent workability of a film to be processed when used as a mask. It has become possible to provide a reversal pattern forming method capable of forming a narrow reversal pattern. Further, according to the present invention, it is possible to provide an image reversal composition that can be suitably used in the reversal pattern forming method, and further to provide a method for manufacturing an electronic device including the reversal pattern formation method.
  • the schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention The schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention.
  • the schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention The schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention.
  • the schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention The schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention.
  • the schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention The schematic sectional drawing for demonstrating 1 process of the inversion pattern formation method of this invention.
  • the notation that does not indicate substitution and non-substitution includes not only a substituent but also a substituent.
  • the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • active light beam or “radiation” in the present specification refers to, for example, an emission line spectrum of a mercury lamp, far ultraviolet rays represented by excimer laser, extreme ultraviolet (EUV) rays, X rays or electron rays ( Electron Beam (EB).
  • light means actinic rays or radiation.
  • exposure in the present specification is not limited to exposure with far-ultraviolet rays such as mercury lamps and excimer lasers, X-rays and EUV light, but also with particle beams such as electron beams and ion beams, unless otherwise specified. Drawing is also included in the exposure.
  • far-ultraviolet rays such as mercury lamps and excimer lasers, X-rays and EUV light
  • particle beams such as electron beams and ion beams
  • the reverse pattern forming method of the present invention includes (A) forming an actinic ray-sensitive or radiation-sensitive film using the actinic ray-sensitive or radiation-sensitive resin composition; (B) a step of exposing the actinic ray-sensitive or radiation-sensitive film; (C) developing the exposed actinic ray-sensitive or radiation-sensitive film with a developer containing an organic solvent, thereby forming a negative pattern including a remaining film portion and a space portion; (D) applying an image reversal composition on the negative pattern and embedding the image reversal composition in the space; and (e) removing the remaining film portion of the negative pattern by etching. And obtaining a reverse pattern.
  • the reversal pattern forming method of the present invention is a composition for image reversal that forms a negative pattern using an actinic ray-sensitive or radiation-sensitive resin composition and is embedded in the concave portion, and has a content of silicon atoms and metal atoms.
  • the first feature is that a composition containing a total of 0 to 20% by mass of a resin is used.
  • the present invention it is possible to form a reversal pattern such as a fine line pattern or a fine dot pattern without causing a problem of pattern collapse. Furthermore, this reversal pattern is not only fine but also a mask. As a result, the workability of the work layer is also excellent.
  • the reason why the reverse pattern obtained by the reverse pattern forming method of the present invention is excellent in workability of the layer to be processed when used as a mask is not necessarily clear, but as an image reversal composition, silicon atoms and metal atoms By using a composition containing a resin having a total content of 0 to 20% by mass, it is presumed that the etching selectivity with the layer to be processed containing silicon atoms is increased.
  • the reverse pattern forming method of the present invention is a step of forming an actinic ray-sensitive or radiation-sensitive film 30 on a layer to be processed 20 formed on a substrate 10 (hereinafter referred to as “step”). (A) ").
  • the actinic ray-sensitive or radiation-sensitive film is formed by dissolving the components to be described later of the actinic ray-sensitive or radiation-sensitive resin composition in a solvent, and if necessary filtered through a filter. It can apply
  • Application of the actinic ray-sensitive or radiation-sensitive resin composition onto the work layer 20 can be performed by an appropriate application method such as a spin coater.
  • the film thickness of the actinic ray-sensitive or radiation-sensitive film is not particularly limited, but is preferably adjusted in the range of 10 to 500 nm, more preferably in the range of 10 to 200 nm, and still more preferably in the range of 10 to 80 nm. To do.
  • the rotation speed is usually 500 to 3000 rpm, preferably 800 to 2000 rpm, more preferably 1000 to 1500 rpm.
  • a substrate eg, silicon or silicon dioxide coating
  • silicon or silicon dioxide coating used for manufacturing an integrated circuit element
  • the work layer 20 may be provided with an inorganic or organic antireflection film as required.
  • an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, and amorphous silicon
  • an organic film type made of a light absorber and a polymer material can be used.
  • commercially available organic antireflection films such as Brewer Science DUV30 series, DUV-40 series, Shipley AR-2, AR-3 and AR-5 may be used. it can.
  • the actinic ray-sensitive or radiation-sensitive film is preferably dried, and preferably heated (prebaked) (PB) at the drying stage.
  • the heating (PB) temperature is preferably 60 to 200 ° C., more preferably 80 to 150 ° C., and still more preferably 90 to 140 ° C.
  • the heating (PB) time is not particularly limited, but is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds. Heating (PB) can be performed by means provided in a normal exposure / developing machine, and may be performed using a hot plate or the like.
  • step (b) the step of exposing the actinic ray-sensitive or radiation-sensitive film 30 (hereinafter referred to as “step (b)”). including.
  • the wavelength of the light source used in the exposure apparatus is not limited, but infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultra violet (EUV) light, X-ray, electron beam (electron beam).
  • EB and the like, preferably far ultraviolet light having a wavelength of 250 nm or less, more preferably 220 nm or less, particularly preferably 1 to 200 nm, specifically KrF excimer laser (248 nm), ArF excimer laser ( 193 nm), F 2 excimer laser (157 nm), X-ray, EUV light (13 nm), electron beam (EB), etc., preferably KrF excimer laser, ArF excimer laser, X-ray, EUV light or electron beam. X-ray or EUV light is more preferable.
  • EUV extreme ultraviolet
  • EB electron beam
  • the actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to the present invention has a refractive index that is higher than that of air between the film and the lens when irradiated with actinic rays or radiation.
  • Exposure may be performed by filling a high liquid (immersion medium). Thereby, resolution can be improved.
  • immersion medium any liquid can be used as long as it has a higher refractive index than air, but pure water is preferred.
  • the immersion liquid used for immersion exposure will be described below.
  • the immersion liquid is preferably a liquid that is transparent to the exposure wavelength and has a refractive index temperature coefficient as small as possible so as to minimize distortion of the optical image projected onto the resist film.
  • a medium having a refractive index of 1.5 or more can be used in that the refractive index can be further improved.
  • This medium may be an aqueous solution or an organic solvent.
  • the additive is preferably an aliphatic alcohol having a refractive index substantially equal to that of water, and specifically includes methyl alcohol, ethyl alcohol, isopropyl alcohol and the like.
  • the electric resistance of water is desirably 18.3 M ⁇ cm or more, the TOC (Total Organic Carbon) concentration is desirably 20 ppb or less, and deaeration treatment is desirably performed.
  • topcoat An immersion liquid poorly soluble film (hereinafter also referred to as “topcoat”) may be provided between the film of the composition of the present invention and the immersion liquid so that the film does not directly contact the immersion liquid. Good.
  • the functions necessary for the top coat are suitability for application to the upper layer portion of the composition film and poor solubility of the immersion liquid. It is preferable that the top coat is not mixed with the composition film and can be uniformly applied to the upper layer of the composition film.
  • the top coat examples include hydrocarbon polymers, acrylic acid ester polymers, polymethacrylic acid, polyacrylic acid, polyvinyl ether, silicon-containing polymers, fluorine-containing polymers, and the like. From the viewpoint of contaminating the optical lens when impurities are eluted from the top coat into the immersion liquid, it is preferable that the residual monomer component of the polymer contained in the top coat is small.
  • a developer When removing the topcoat, a developer may be used, or a separate release agent may be used.
  • a release agent a solvent having low penetration into the film is preferable. From the viewpoint that the peeling step can be performed at the same time as the film development processing step, it is preferable that the peeling step can be performed with a developer containing an organic solvent.
  • the resolution is improved when there is no difference in refractive index between the top coat and the immersion liquid.
  • the top coat is preferably close to the refractive index of the immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, it is preferable to have fluorine atoms in the topcoat. A thin film is more preferable from the viewpoint of transparency and refractive index.
  • the top coat is not mixed with the film and further not mixed with the immersion liquid.
  • the solvent used for the top coat is preferably a water-insoluble medium that is hardly soluble in the solvent used for the composition of the present invention.
  • the topcoat may be water-soluble or water-insoluble.
  • ⁇ Bake process (2)> In the reverse pattern forming method of the present invention, it is preferable to perform post exposure bake (PEB) after the exposure step (b) described above and before the development step (c) described later.
  • the heating (PEB) temperature is preferably 60 to 150 ° C., more preferably 80 to 150 ° C., and still more preferably 90 to 140 ° C.
  • the heating (PEB) time is not particularly limited, but is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds. Heating (PEB) can be performed by means provided in a normal exposure / developing machine, and may be performed using a hot plate or the like. PEB promotes the reaction of the exposed area and improves the sensitivity and pattern profile.
  • step (c) the exposed actinic ray-sensitive or radiation-sensitive film 30 is developed using a developer containing an organic solvent (hereinafter referred to as “organic solvent development”). Step) (hereinafter referred to as “step (c)”). As shown in FIG. 1C by organic solvent development, a space portion (concave portion) 31a from which a part of the actinic ray-sensitive or radiation-sensitive film is removed, and a remaining film portion (convex portion) that is not removed by organic solvent development. A negative pattern 30a having 31b is formed.
  • the vapor pressure of the developer (the vapor pressure as a whole in the case of a mixed solvent) is preferably 5 kPa or less, more preferably 3 kPa or less, and particularly preferably 2 kPa or less at 20 ° C.
  • the vapor pressure of the organic solvent is preferably 5 kPa or less, more preferably 3 kPa or less, and particularly preferably 2 kPa or less at 20 ° C.
  • organic solvents are widely used as the organic solvent used in the developer.
  • solvents such as ester solvents, ketone solvents, alcohol solvents, amide solvents, ether solvents, hydrocarbon solvents, etc. Can be used.
  • the ester solvent is a solvent having an ester group in the molecule
  • the ketone solvent is a solvent having a ketone group in the molecule
  • the alcohol solvent is alcoholic in the molecule.
  • It is a solvent having a hydroxyl group
  • an amide solvent is a solvent having an amide group in the molecule
  • an ether solvent is a solvent having an ether bond in the molecule.
  • diethylene glycol monomethyl ether corresponds to both alcohol solvents and ether solvents in the above classification.
  • the hydrocarbon solvent is a hydrocarbon solvent having no substituent.
  • a developer containing at least one solvent selected from ketone solvents, ester solvents, alcohol solvents and ether solvents is preferable.
  • ester solvents include methyl acetate, ethyl acetate, butyl acetate, pentyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxyacetate, propylene glycol monomethyl ether acetate (PGMEA; also known as 1-methoxy- 2-acetoxypropane), ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, Diethylene glycol monophenyl ether Tate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether Tate
  • ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, Examples include phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetonyl alcohol, acetyl carbinol, acetophenone, methyl naphthyl ketone, isophorone, propylene carbonate, and ⁇ -butyrolactone.
  • the alcohol solvent examples include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, 2-hexyl alcohol, alcohols such as n-heptyl alcohol, n-octyl alcohol, n-decanol and 3-methoxy-1-butanol; glycol solvents such as ethylene glycol, diethylene glycol and triethylene glycol; ethylene glycol monomethyl ether and propylene glycol monomethyl ether (PGME; also known as 1-methoxy-2-propanol), diethylene glycol monomethyl ether, triethylene glycol monoethyl ether Contains hydroxyl groups such as methoxymethyl butanol, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol mono
  • ether solvents include glycol ether solvents that contain hydroxyl groups, glycol ether solvents that do not contain hydroxyl groups such as propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether, anisole, and phenetole.
  • aromatic ether solvents dioxane, tetrahydrofuran, tetrahydropyran, perfluoro-2-butyltetrahydrofuran, perfluorotetrahydrofuran, 1,4-dioxane and the like.
  • an glycol ether solvent or an aromatic ether solvent such as anisole is used.
  • amide solvents include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, hexamethylphosphoric triamide, 1,3-dimethyl-2-imidazolidinone and the like. Can be used.
  • hydrocarbon solvent examples include aliphatic hydrocarbon solvents such as pentane, hexane, octane, decane, 2,2,4-trimethylpentane, 2,2,3-trimethylhexane, perfluorohexane, and perfluoroheptane.
  • Aromatic hydrocarbon solvents such as toluene, xylene, ethylbenzene, propylbenzene, 1-methylpropylbenzene, 2-methylpropylbenzene, dimethylbenzene, diethylbenzene, ethylmethylbenzene, trimethylbenzene, ethyldimethylbenzene, dipropylbenzene, etc. Can be mentioned.
  • aromatic hydrocarbon solvents are preferable.
  • a plurality of the above solvents may be mixed, or may be used by mixing with a solvent other than the above or water.
  • the water content of the developer as a whole is preferably less than 10% by mass, and more preferably substantially free of moisture.
  • the concentration (content) of the organic solvent in the developer is preferably 50% by mass or more and 100% by mass or less, more preferably 70% by mass or more and 100% by mass with respect to the total amount of the developer. Hereinafter, it is more preferably 90% by mass or more and 100% by mass or less. Particularly preferred is a case consisting essentially of an organic solvent. In addition, the case where it consists only of an organic solvent includes the case where a trace amount surfactant, antioxidant, stabilizer, an antifoamer, etc. are contained.
  • solvents it is more preferable to contain one or more selected from the group consisting of butyl acetate, pentyl acetate, isopentyl acetate, propylene glycol monomethyl ether acetate, and anisole.
  • the water content of the developer is usually 10% by mass or less, preferably 5% by mass or less, more preferably 1% by mass or less, and most preferably contains no water. preferable.
  • a developer containing an organic solvent can contain an appropriate amount of a surfactant as required.
  • the same surfactants as those used in the actinic ray-sensitive or radiation-sensitive resin composition described later can be used.
  • the amount of the surfactant used is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and more preferably 0.01 to 0.5% by mass with respect to the total amount of the developer.
  • ⁇ Development method As a development method, for example, the substrate is immersed in a tank filled with a developer for a certain period of time (dip method), and the developer is developed on the surface of the substrate by surface tension and kept stationary for a certain period of time. Method (paddle method), Method of spraying developer on the substrate surface (spray method), Method of continuously discharging developer while scanning the developer discharge nozzle at a constant speed on a substrate rotating at a constant speed (dynamic Dispensing method) can be applied. Moreover, you may implement the process of stopping image development, after the process of developing, substituting with another solvent.
  • the development time is not particularly limited as long as the resin in the unexposed area is sufficiently dissolved, and is usually 10 seconds to 300 seconds. Preferably, it is 20 seconds to 120 seconds.
  • the temperature of the developer is preferably 0 ° C to 50 ° C, more preferably 15 ° C to 35 ° C.
  • cleaned using the rinse liquid containing an organic solvent may be included after the image development process (c).
  • -Rinse solution The vapor pressure of the rinse solution used after development (the vapor pressure as a whole in the case of a mixed solvent) is preferably 0.05 kPa or more and 5 kPa or less at 20 ° C, more preferably 0.1 kPa or more and 5 kPa or less. Preferably, it is 0.12 kPa or more and 3 kPa or less.
  • the vapor pressure of the rinse liquid By setting the vapor pressure of the rinse liquid to 0.05 kPa or more and 5 kPa or less, the temperature uniformity in the wafer surface is improved, and further, the swelling due to the penetration of the rinse solution is suppressed, and the dimensional uniformity in the wafer surface. Improves.
  • rinsing liquid various organic solvents are used. At least one organic solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents or It is preferable to use a rinse solution containing water.
  • a step of washing with a rinse solution containing at least one organic solvent selected from a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent or a hydrocarbon solvent is performed.
  • a rinse liquid containing at least one selected from the group of monohydric alcohols and hydrocarbon solvents is used.
  • examples of the monohydric alcohol used in the rinsing step after development include linear, branched, and cyclic monohydric alcohols, and specifically, 1-butanol, 2-butanol, 3-methyl- 1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol , 3-octanol, 4-octanol, 3-methyl-3-pentanol, cyclopentanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-2-butanol, 2-methyl-2-pentanol 2-methyl-3-pentanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, -Methyl-2-pentanol,
  • hydrocarbon solvent examples include aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as octane and decane.
  • the rinsing liquid preferably contains one or more selected from the group consisting of 1-hexanol, 4-methyl-2-pentanol, and decane.
  • a plurality of the above components may be mixed, or may be used by mixing with an organic solvent other than the above.
  • the solvent may be mixed with water, but the water content in the rinsing liquid is usually 60% by mass or less, preferably 30% by mass or less, more preferably 10% by mass or less, and most preferably 5% by mass or less. is there.
  • a favorable rinse characteristic can be acquired by making a moisture content into 60 mass% or less.
  • an appropriate amount of a surfactant can be contained and used.
  • the same surfactants used in the actinic ray-sensitive or radiation-sensitive resin composition described later can be used, and the amount used is usually 0 with respect to the total amount of the rinsing liquid. 0.001 to 5% by mass, preferably 0.005 to 2% by mass, more preferably 0.01 to 0.5% by mass.
  • the developed wafer is cleaned using the rinsing liquid containing the organic solvent.
  • the method of the cleaning process is not particularly limited.
  • a method of continuously discharging the rinse liquid onto the substrate rotating at a constant speed (rotary discharge method), or immersing the substrate in a tank filled with the rinse liquid for a certain period of time.
  • a method (dip method), a method of spraying a rinsing liquid onto the substrate surface (spray method), and the like can be applied.
  • a cleaning process is performed by a rotary discharge method, and after cleaning, the substrate is rotated at a speed of 2000 rpm to 4000 rpm. It is preferable to rotate and remove the rinse liquid from the substrate.
  • the rinse time is not particularly limited, but is usually 10 to 300 seconds.
  • the time is preferably 10 seconds to 180 seconds, and most preferably 20 seconds to 120 seconds.
  • the temperature of the rinse liquid is preferably 0 ° C. to 50 ° C., more preferably 15 ° C. to 35 ° C.
  • the heating temperature is not particularly limited as long as a good resist pattern can be obtained, and is usually 40 ° C. to 160 ° C.
  • the heating temperature is preferably 50 ° C. or higher and 150 ° C. or lower, and most preferably 50 ° C. or higher and 110 ° C. or lower.
  • the heating time is not particularly limited as long as a good resist pattern can be obtained, but is usually 15 seconds to 300 seconds, and preferably 15 to 180 seconds.
  • the reversal pattern forming method of the present invention preferably includes a heating step (Post Bake) after the development step (c) described above (after the rinsing step if a rinsing step is included).
  • the negative pattern can be insolubilized in the solvent contained in the image reversal composition applied in the next step by baking after development or rinsing.
  • the heating temperature is preferably 140 to 250 ° C, more preferably 160 to 230 ° C, and further preferably 180 to 210 ° C.
  • the heating time is not particularly limited, but is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds.
  • this heating step can remove the developer or rinse solution remaining between patterns and inside the patterns.
  • the image reversal composition is applied on the negative pattern obtained in the developing step (c) to form the image reversal film 40 shown in FIG. Process (d) "or" image reversal film forming process ").
  • the image reversal composition is embedded in the concave portions of the negative pattern.
  • Application method is not particularly limited, and application is performed by an appropriate application method such as a spin coater.
  • the film thickness of the image reversal film is not particularly limited, but is preferably adjusted in the range of 10 to 500 nm, more preferably in the range of 10 to 200 nm, and still more preferably in the range of 10 to 80 nm.
  • the film thickness of the image reversal film means the thickness from the bottom surface (surface of the layer 20 to be processed) of the space (recessed portion) 31a of the negative pattern 30a to the surface of the image reversal film 40.
  • the image reversal film is preferably dried, and is preferably heated in the drying stage.
  • the heating temperature is preferably 60 to 200 ° C, more preferably 80 to 180 ° C, and still more preferably 90 to 160 ° C.
  • the heating time is not particularly limited, but is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds. Heating can be performed using a hot plate or the like.
  • the reverse pattern forming method of the present invention is a process of obtaining a reverse pattern of a negative pattern by removing the remaining film portion (convex portion) of the negative pattern by etching (hereinafter referred to as “process (e)” or “image reverse process”. Process ”and the like).
  • the reversal pattern forming method of the present invention cuts the surface of the image reversal film 40 shown in FIG. 1D until the surface of the negative resist pattern 30a appears by etching back (not shown). Then, the inversion pattern 40a shown in FIG. 1E is obtained by removing the convex portions 31b of the negative pattern 30a by etching.
  • Etching back is performed until the negative resist pattern 30a appears on the surface by dry etching with fluorocarbon gas, chlorine gas, bromine gas, argon gas, oxygen gas, and nitrogen gas.
  • the etching back can be performed by dry etching, but can also be mechanically removed by CMP.
  • image reversal is performed by etching the remaining film portion (convex portion) of the negative pattern with oxygen gas, hydrogen gas, ammonia gas, argon gas, fluorocarbon gas, nitrogen gas, etc., and the reversal pattern 40a is used as a mask.
  • etching the processed layer 20 a pattern 20a shown in FIG. 1F is obtained.
  • the gas used for etching the layer to be processed 20 is not particularly limited.
  • the layer to be processed 20 contains silicon atoms, it is preferable to include a fluorocarbon-based gas.
  • the image reversal composition used in the reversal pattern forming method of the present invention contains a resin.
  • This resin (hereinafter referred to as “resin (R)”) has a total content of silicon atoms and metal atoms of 0 to 20 mass%. That is, the resin (R) does not contain or contains a silicon atom or a metal atom, and when it is contained, the total amount is 20% by mass or less.
  • the resin (R) has a total content of silicon atoms and metal atoms of preferably 0 to 15% by mass, more preferably 0 to 10% by mass, and more preferably 0 to 5% by mass. It is particularly preferred that
  • Resin (R) is preferably a resin containing an organic group.
  • the organic group means a group containing carbon, and may further contain hydrogen, nitrogen, oxygen, sulfur, fluorine or the like.
  • the resin (R) containing an organic group may be a homopolymer of a repeating unit containing an organic group or a copolymer.
  • the resin (R) containing a repeating unit containing an organic group is preferably a resin selected from vinyl resins, acrylic resins and novolac resins, and more preferably a resin selected from vinyl resins and acrylic resins.
  • the resin (R) preferably has an Onishi parameter of 4.0 or less, more preferably 3.5 or less, represented by the following formula (1), 3.0 or less. More preferably.
  • the Onishi parameter of the portion of the resin (A) (that is, the resin (A) after polarity conversion) remaining as a pattern after development of an actinic ray-sensitive or radiation-sensitive film, which will be described later, is generally 4.0-5. Since it is about 0.0, the Onishi parameter is preferably in the above range as the resin (R) used in the image reversal composition.
  • the resin (R) preferably has a group containing a ring structure in the side chain, and more preferably contains a repeating unit containing a ring structure.
  • the resin (R) preferably has a group containing an aromatic ring in the side chain, and particularly preferably contains a repeating unit derived from styrene.
  • repeating unit derived from styrene examples include a repeating unit represented by the following general formula (III).
  • Xa represents a hydrogen atom or a linear or branched alkyl group.
  • Rx represents a hydrogen atom or a group capable of decomposing and leaving by the action of an acid.
  • N represents an integer of 1 to 3.
  • linear or branched alkyl group for Xa a linear or branched alkyl group having 1 to 10 carbon atoms is preferable.
  • the group that is decomposed and eliminated by the action of the acid represented by Rx is included in the acid-decomposable group that the resin (A) contained in the actinic ray-sensitive or radiation-sensitive resin composition described later may have. Examples thereof are the same as the groups capable of leaving by the action of an acid.
  • the repeating unit represented by the general formula (III) may further have a substituent other than —ORx on the benzene ring.
  • the resin (R) preferably has a monocyclic or polycyclic cycloalkyl group in the side chain, and more preferably contains a repeating unit having a polycyclic cycloalkyl group.
  • resin (R) contains the repeating unit which has an acid-decomposable group which resin (A) contained in the actinic-ray-sensitive or radiation-sensitive resin composition mentioned later may have in one form. Also good.
  • the resin (R) also preferably has a group containing a ring structure in the main chain, more preferably a group containing an aromatic ring in the main chain, and particularly preferably contains a repeating unit derived from acenaphthylene. preferable.
  • the content of the repeating unit containing a ring structure in the resin (R) is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, based on all repeating units in the resin (R). .
  • the resin (R) preferably has a polystyrene-equivalent weight average molecular weight (Mw) of 1,000 to 500,000, more preferably 2,000 to 30,000.
  • Mw polystyrene-equivalent weight average molecular weight
  • the weight average molecular weight is preferably 500,000 or less from the viewpoint of embedding in the concave portion of the negative pattern, and the weight average molecular weight is preferably 1,000 or more from the viewpoint of etching resistance.
  • Ra and Rx each independently represent a hydrogen atom or an alkyl group which may be substituted with a fluorine atom having 1 to 4 carbon atoms, a represents an integer of 1 to 3, Me represents methyl Represents a group.
  • the resin (R) can be used alone or in combination of two or more.
  • the content of the resin (R) is preferably 70 to 100% by mass, more preferably 80 to 100% by mass, and more preferably 90 to 100% by mass based on the total solid content in the image reversal composition of the present invention. Particularly preferred.
  • the image reversal composition of the present invention may contain an additive.
  • the additive include a photoacid generator, a thermal acid generator, a photobase generator, a thermal base generator, and a surfactant. Is mentioned.
  • the image reversal composition of the present invention preferably contains a solvent.
  • a solvent the solvent similar to the solvent which can be contained in the actinic-ray sensitive or radiation sensitive resin composition mentioned later can be used.
  • a solvent can be used individually by 1 type or in combination of 2 or more types.
  • the solid content concentration in the image reversal composition of the present invention is preferably 1.0 to 10.0% by mass, more preferably 2.0 to 8.0% by mass.
  • the actinic ray-sensitive or radiation-sensitive resin composition used in the reversal pattern forming method of the present invention is negatively developed, that is, when exposed to light, its solubility in the developer decreases, and the exposed portion has It is used for development in which an unexposed portion remains as a pattern, and in the present invention, it is particularly used for organic solvent development using a developer containing an organic solvent.
  • the term “for organic solvent development” means an application that is used in a step of developing using a developer containing at least an organic solvent.
  • the actinic ray-sensitive or radiation-sensitive resin composition for forming a negative pattern in the present invention is typically a resist composition, since a particularly high effect can be obtained.
  • the actinic ray-sensitive or radiation-sensitive resin composition used in the present invention is typically a chemically amplified resist composition.
  • the actinic ray-sensitive or radiation-sensitive resin composition used in the present invention is a resin (hereinafter referred to as “resin (A)”), an activity whose polarity is changed by the action of an acid and whose solubility in an organic solvent is reduced. It contains a compound that generates an acid upon irradiation with light or radiation, and a solvent.
  • resin (A) a resin
  • the essential components and optional components contained in the actinic ray-sensitive or radiation-sensitive resin composition will be described below.
  • Resin (a) is a resin whose polarity is changed by the action of an acid and whose solubility in organic solvents is reduced, and has an acid-decomposable group It preferably has a repeating unit.
  • the repeating unit having an acid-decomposable group is, for example, a group that is decomposed by the action of an acid on the main chain or side chain of the resin, or both of the main chain and side chain (hereinafter also referred to as “acid-decomposable group”).
  • the group generated by the decomposition of the acid-decomposable group is preferably a polar group, since the affinity with a developer containing an organic solvent is lowered and insolubilization or insolubilization (negative conversion) proceeds.
  • the polar group is more preferably an acidic group.
  • the definition of the polar group is synonymous with the definition described in the section of the repeating unit (b) described later.
  • Examples of the polar group generated by the decomposition of the acid-decomposable group include an alcoholic hydroxyl group, an amino group, and an acidic group. Is mentioned.
  • the polar group generated by the decomposition of the acid-decomposable group is preferably an acidic group.
  • the acidic group is not particularly limited as long as it is a group that is insolubilized in a developer containing an organic solvent, but is preferably a phenolic hydroxyl group, a carboxylic acid group, a sulfonic acid group, a fluorinated alcohol group, a sulfonamide group, a sulfonyl group.
  • alkylsulfonyl alkylcarbonyl
  • alkylsulfonyl alkylcarbonyl
  • imide group bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (Alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) methylene group, more preferably carboxylic acid group, fluorinated alcohol group (preferably hexafluoroisopropanol), phenolic hydride Hexyl group, (used as a developer for conventional resist, a group dissociated in 2.38 mass% tetramethylammonium hydroxide aqueous solution) acidic group such as a sulfonic acid group include.
  • a preferable group as the acid-decomposable group is a group in which the hydrogen atom of these groups is substituted with a group capable of leaving by the action of an acid.
  • Examples of the group capable of leaving by the action of an acid include —C (R 36 ) (R 37 ) (R 38 ), —C (R 36 ) (R 37 ) (OR 39 ), —C (R 01) (R 02) (can be exemplified OR 39) or the like.
  • R 36 to R 39 each independently represents an alkyl group, a cycloalkyl group, a monovalent aromatic ring group, a group in which an alkylene group and a monovalent aromatic ring group are combined, or an alkenyl group.
  • R 36 and R 37 may be bonded to each other to form a ring.
  • R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a monovalent aromatic ring group, a group in which an alkylene group and a monovalent aromatic ring group are combined, or an alkenyl group.
  • the acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group.
  • repeating unit (a) a repeating unit represented by the following general formula (V) is more preferable.
  • R 51 , R 52 , and R 53 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group.
  • R 52 may be bonded to L 5 to form a ring, and R 52 in this case represents an alkylene group.
  • L 5 represents a single bond or a divalent linking group, and in the case of forming a ring with R 52 , represents a trivalent linking group.
  • R 54 represents an alkyl group
  • R 55 and R 56 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a monovalent aromatic ring group, or an aralkyl group.
  • R 55 and R 56 may combine with each other to form a ring.
  • no and R 55 and R 56 are hydrogen atoms at the same time.
  • the alkyl group of R 51 to R 53 in the general formula (V) is preferably a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, which may have a substituent, Examples thereof include alkyl groups having 20 or less carbon atoms such as hexyl group, 2-ethylhexyl group, octyl group and dodecyl group, more preferably alkyl groups having 8 or less carbon atoms, and particularly preferably alkyl groups having 3 or less carbon atoms.
  • the alkyl group contained in the alkoxycarbonyl group is preferably the same as the alkyl group in R 51 to R 53 described above.
  • the cycloalkyl group may be monocyclic or polycyclic.
  • a monocyclic cycloalkyl group having 3 to 8 carbon atoms such as a cyclopropyl group, a cyclopentyl group, and a cyclohexyl group which may have a substituent may be mentioned.
  • halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
  • Preferred substituents in each of the above groups include, for example, alkyl groups, cycloalkyl groups, aryl groups, amino groups, amide groups, ureido groups, urethane groups, hydroxyl groups, carboxyl groups, halogen atoms, alkoxy groups, thioether groups, acyls.
  • the alkylene group is preferably an alkylene group having 1 to 8 carbon atoms such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group or an octylene group. Groups. An alkylene group having 1 to 4 carbon atoms is more preferable, and an alkylene group having 1 to 2 carbon atoms is particularly preferable.
  • the ring formed by combining R 52 and L 5 is particularly preferably a 5- or 6-membered ring.
  • R 51 and R 53 in Formula (V) are more preferably a hydrogen atom, an alkyl group, or a halogen atom, and a hydrogen atom, a methyl group, an ethyl group, a trifluoromethyl group (—CF 3 ), a hydroxymethyl group (—CH 3 ).
  • 2- OH), a chloromethyl group (—CH 2 —Cl), and a fluorine atom (—F) are particularly preferred.
  • R 52 is more preferably a hydrogen atom, an alkyl group, a halogen atom or an alkylene group (forming a ring with L 5 ), a hydrogen atom, a methyl group, an ethyl group, a trifluoromethyl group (—CF 3 ), a hydroxymethyl group Particularly preferred are (—CH 2 —OH), chloromethyl group (—CH 2 —Cl), fluorine atom (—F), methylene group (forms a ring with L 5 ), and ethylene group (forms a ring with L 5 ). .
  • L 1 represents an alkylene group, a cycloalkylene group, a divalent aromatic ring group, or a group in which an alkylene group and a divalent aromatic ring group are combined.
  • L 5 is preferably a single bond, a group represented by —COO—L 1 —, or a divalent aromatic ring group.
  • L 1 is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a methylene or propylene group.
  • the divalent aromatic ring group a 1,4-phenylene group, a 1,3-phenylene group, a 1,2-phenylene group, and a 1,4-naphthylene group are preferable, and a 1,4-phenylene group is more preferable.
  • examples of the trivalent linking group represented by L 5 include groups formed by removing any hydrogen atom.
  • the alkyl group of R 54 to R 56 is preferably one having 1 to 20 carbon atoms, more preferably one having 1 to 10 carbon atoms, and includes a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group. Particularly preferred are those having 1 to 4 carbon atoms such as a group, isobutyl group and t-butyl group.
  • the cycloalkyl group represented by R 55 and R 56 is preferably one having 3 to 20 carbon atoms, and may be monocyclic such as cyclopentyl group, cyclohexyl group, norbornyl group, adamantyl group, Polycyclic ones such as a tetracyclodecanyl group and a tetracyclododecanyl group may be used.
  • the ring formed by combining R 55 and R 56 with each other preferably has 3 to 20 carbon atoms, and may be monocyclic such as a cyclopentyl group or a cyclohexyl group, or a norbornyl group.
  • a polycyclic group such as an adamantyl group, a tetracyclodecanyl group, or a tetracyclododecanyl group.
  • R 54 is preferably an alkyl group having 1 to 3 carbon atoms, more preferably a methyl group or an ethyl group.
  • the monovalent aromatic ring group represented by R 55 and R 56 is preferably one having 6 to 20 carbon atoms, and may be monocyclic or polycyclic and may have a substituent.
  • a phenyl group, 1-naphthyl group, 2-naphthyl group, 4-methylphenyl group, 4-methoxyphenyl group and the like can be mentioned.
  • one of R 55 and R 56 is a hydrogen atom, the other is preferably a monovalent aromatic ring group.
  • the aralkyl group represented by R 55 and R 56 may be monocyclic or polycyclic and may have a substituent. Preferably, it has 7 to 21 carbon atoms, and examples thereof include a benzyl group and a 1-naphthylmethyl group.
  • a general method for synthesizing a polymerizable group-containing ester can be applied and is not particularly limited.
  • repeating unit (a) represented by the general formula (V) are shown below, but the present invention is not limited thereto.
  • Rx and Xa 1 represent a hydrogen atom, CH 3 , CF 3 , or CH 2 OH.
  • Rxa and Rxb each independently represent an alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 18 carbon atoms, or an aralkyl group having 7 to 19 carbon atoms.
  • Z represents a substituent.
  • p represents 0 or a positive integer, preferably 0 to 2, and more preferably 0 or 1. When a plurality of Z are present, they may be the same as or different from each other.
  • Z is preferably a group consisting of only a hydrogen atom and a carbon atom from the viewpoint of increasing the dissolution contrast with respect to a developer containing an organic solvent before and after acid decomposition, for example, a linear or branched alkyl group, A cycloalkyl group is preferred.
  • the resin (A) may contain a repeating unit represented by the following general formula (VI) as the repeating unit (a).
  • R 61 , R 62 and R 63 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
  • R 62 may be bonded to Ar 6 to form a ring, and R 62 in this case represents a single bond or an alkylene group.
  • X 6 represents a single bond, —COO—, or —CONR 64 —.
  • R 64 represents a hydrogen atom or an alkyl group.
  • L 6 represents a single bond or an alkylene group.
  • Ar 6 represents an (n + 1) -valent aromatic ring group, and represents an (n + 2) -valent aromatic ring group when bonded to R 62 to form a ring.
  • Y 2 independently represents a hydrogen atom or a group capable of leaving by the action of an acid when n ⁇ 2. However, at least one of Y 2 represents a group capable of leaving by the action of an acid.
  • N represents an integer of 1 to 4.
  • the above repeating unit having an acid-decomposable group may be one type or a combination of two or more types.
  • the content of the repeating unit having an acid-decomposable group in the resin (A) (the total when there are a plurality of types) is 5 mol% or more and 80 mol% or less with respect to all the repeating units in the resin (A). It is preferably 5 mol% or more and 75 mol% or less, more preferably 10 mol% or more and 65 mol% or less.
  • (B) Repeating unit having a polar group The resin (A) preferably contains a repeating unit (b) having a polar group. By including the repeating unit (b), for example, the sensitivity of the composition containing a resin can be improved.
  • the repeating unit (b) is preferably a non-acid-decomposable repeating unit (that is, having no acid-decomposable group).
  • Examples of the “polar group” that can be contained in the repeating unit (b) include the following (1) to (4).
  • “electronegativity” means a value by Pauling.
  • Examples of such a polar group include a hydroxy group and the like.
  • Functional group including a structure in which two atoms having electronegativity different by 0.5 or more are bonded by a double bond or a triple bond.
  • X ⁇ represents a counter anion
  • the “polar group” that the repeating unit (b) may contain includes, for example, (I) hydroxy group, (II) cyano group, (III) lactone group, (IV) carboxylic acid group or sulfonic acid group, (V) amide group , A group corresponding to a sulfonamide group or a derivative thereof, (VI) an ammonium group or a sulfonium group, and at least one selected from the group consisting of a combination of two or more thereof.
  • the polar group is selected from a hydroxyl group, a cyano group, a lactone group, a carboxylic acid group, a sulfonic acid group, an amide group, a sulfonamide group, an ammonium group, a sulfonium group, and a group formed by combining two or more thereof.
  • a hydroxyl group, a cyano group, a lactone group, or a group containing a cyanolactone structure is particularly preferable.
  • the exposure latitude (EL) of the composition containing the resin can be further improved.
  • the sensitivity of the resin-containing composition can be further improved.
  • the resin further contains a repeating unit having a lactone group
  • the dissolution contrast with respect to a developer containing an organic solvent can be further improved.
  • this makes it possible to further improve the applicability of the resin-containing composition and the adhesion to the substrate.
  • the resin further contains a repeating unit having a group containing a lactone structure having a cyano group
  • the dissolution contrast with respect to the developer containing an organic solvent can be further improved.
  • this makes it possible to further improve the sensitivity, applicability, and adhesion to the substrate of the resin-containing composition.
  • this makes it possible for a single repeating unit to have a function attributable to each of the cyano group and the lactone group, thereby further increasing the degree of freedom in designing the resin.
  • the polar group which the repeating unit (b) has is an alcoholic hydroxy group or a cyano group
  • it is a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group as one embodiment of a preferable repeating unit. Is mentioned.
  • it is preferable not to have an acid-decomposable group.
  • the alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably an adamantyl group, a diamantyl group, or a norbornane group.
  • the alicyclic hydrocarbon structure substituted with a preferred hydroxyl group or cyano group partial structures represented by the following general formulas (VIIa) to (VIIc) are preferred. This improves the substrate adhesion and developer compatibility.
  • R 2 c to R 4 c each independently represents a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R 2 c to R 4 c represents a hydroxyl group. Preferably, one or two of R 2 c to R 4 c are a hydroxyl group and the remaining is a hydrogen atom. In the general formula (VIIa), more preferably, two of R 2 c to R 4 c are a hydroxyl group and the rest are hydrogen atoms.
  • Examples of the repeating unit having a partial structure represented by the general formulas (VIIa) to (VIIc) include the repeating units represented by the following general formulas (AIIa) to (AIIc).
  • R 1 c represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.
  • R 2 c ⁇ R 4 c is in the general formula (VIIa) ⁇ (VIIc), the same meanings as R 2 c ⁇ R 4 c.
  • the resin (A) may or may not contain a repeating unit having a hydroxyl group or a cyano group. However, when it is contained, the content of the repeating unit having a hydroxyl group or a cyano group is in the resin (A).
  • the amount is preferably 1 to 60 mol%, more preferably 3 to 50 mol%, still more preferably 5 to 40 mol%, based on all repeating units.
  • repeating unit having a hydroxyl group or a cyano group are listed below, but the present invention is not limited thereto.
  • the repeating unit (b) may be a repeating unit having a lactone structure as a polar group.
  • repeating unit having a lactone structure a repeating unit represented by the following general formula (AII) is more preferable.
  • Rb 0 represents a hydrogen atom, a halogen atom or an optionally substituted alkyl group (preferably having 1 to 4 carbon atoms).
  • the alkyl group of Rb 0 may have include a hydroxyl group and a halogen atom.
  • the halogen atom for Rb 0 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
  • Rb 0 is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, and particularly preferably a hydrogen atom or a methyl group.
  • Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic cycloalkyl structure, an ether bond, an ester bond, a carbonyl group, or a divalent linking group obtained by combining these.
  • Ab is preferably a single bond or a divalent linking group represented by —Ab 1 —CO 2 —.
  • Ab 1 is a linear or branched alkylene group, a monocyclic or polycyclic cycloalkylene group, and preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group, or a norbornylene group.
  • V represents a group having a lactone structure.
  • any group having a lactone structure can be used, but a 5- to 7-membered ring lactone structure is preferable, and a bicyclo structure or a spiro structure is added to the 5- to 7-membered ring lactone structure.
  • Those in which other ring structures are condensed in the form to be formed are preferred.
  • the lactone structure may be directly bonded to the main chain.
  • Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-8), (LC1-13), (LC1-14).
  • the lactone structure portion may or may not have a substituent (Rb 2 ).
  • Preferred examples of the substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a monovalent cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, and an alkoxycarbonyl group having 2 to 8 carbon atoms. , Carboxyl group, halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. More preferred are an alkyl group having 1 to 4 carbon atoms, a cyano group, and an acid-decomposable group.
  • n 2 represents an integer of 0 to 4. When n 2 is 2 or more, a plurality of substituents (Rb 2 ) may be the same or different, and a plurality of substituents (Rb 2 ) may be bonded to form a ring. .
  • the repeating unit having a lactone group usually has an optical isomer, but any optical isomer may be used.
  • One optical isomer may be used alone, or a plurality of optical isomers may be mixed and used.
  • the optical purity (ee) thereof is preferably 90% or more, more preferably 95% or more.
  • the resin (A) may or may not contain a repeating unit having a lactone structure, but when it contains a repeating unit having a lactone structure, the content of the repeating unit in the resin (A) is The range is preferably 1 to 70 mol%, more preferably 3 to 65 mol%, and still more preferably 5 to 60 mol% with respect to the repeating unit.
  • the polar group that the repeating unit (b) may have is an acidic group.
  • Preferred acidic groups include phenolic hydroxyl groups, carboxylic acid groups, sulfonic acid groups, fluorinated alcohol groups (eg hexafluoroisopropanol group), sulfonamide groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, Alkylsulfonyl) (alkylcarbonyl) imide group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, A tris (alkylsulfonyl) methylene group is mentioned.
  • the repeating unit (b) is more preferably a repeating unit having a carboxyl group.
  • the repeating unit having an acidic group includes a repeating unit in which an acidic group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or an acidic group in the main chain of the resin through a linking group. It is preferable to use a polymerization initiator or a chain transfer agent having a repeating unit bonded to each other, or an acidic group, at the time of polymerization and introduce it at the end of the polymer chain. Particularly preferred are repeating units of acrylic acid or methacrylic acid.
  • the acidic group that the repeating unit (b) may have may or may not contain an aromatic ring, but when it has an aromatic ring, it is preferably selected from acidic groups other than phenolic hydroxyl groups.
  • the content of the repeating unit having an acidic group is preferably 30 mol% or less, preferably 20 mol% or less, based on all repeating units in the resin (A). More preferably.
  • content of the repeating unit which has an acidic group in resin (A) is 1 mol% or more normally.
  • repeating unit having an acidic group As specific examples of the repeating unit having an acidic group, a specific example described in paragraph 0098 of JP-A-2014-106298 can be used, and the contents thereof are incorporated in the present specification.
  • the resin (A) of the present invention can have a non-acid-decomposable repeating unit (b) having a phenolic hydroxyl group.
  • a structure represented by the following general formula (I) is more preferable.
  • R 41 , R 42 and R 43 each independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
  • R 42 may form a ring with Ar 4, R 42 in this case represents a single bond or an alkylene group.
  • X 4 represents a single bond, —COO—, or —CONR 64 —, and R 64 represents a hydrogen atom or an alkyl group.
  • L 4 represents a single bond or an alkylene group.
  • Ar 4 represents an (n + 1) -valent aromatic ring group, and when bonded to R 42 to form a ring, represents an (n + 2) -valent aromatic ring group.
  • N represents an integer of 1 to 4.
  • R 51 , R 52 , and R 53 are the same as the specific examples described for the groups represented by R 51 , R 52 , and R 53 .
  • Ar 4 represents an (n + 1) -valent aromatic ring group.
  • the divalent aromatic ring group in the case where n is 1 may have a substituent, for example, an arylene group having 6 to 18 carbon atoms such as a phenylene group, a tolylene group, a naphthylene group, an anthracenylene group, or the like.
  • Examples of preferred aromatic ring groups include heterocycles such as thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole.
  • n + 1) -valent aromatic ring group in the case where n is an integer of 2 or more include (n-1) arbitrary hydrogen atoms removed from the above-described specific examples of the divalent aromatic ring group.
  • the group formed can be preferably mentioned.
  • the (n + 1) -valent aromatic ring group may further have a substituent.
  • Examples of the substituent that the above-described alkyl group, cycloalkyl group, alkoxycarbonyl group, alkylene group, and (n + 1) -valent aromatic ring group may have include the alkyl groups exemplified as R 51 to R 53 in formula (V), Examples thereof include alkoxy groups such as methoxy group, ethoxy group, hydroxyethoxy group, propoxy group, hydroxypropoxy group and butoxy group, and aryl groups such as phenyl group.
  • R 64 represents a hydrogen atom, an alkyl group
  • the alkyl group for R 64 in, the same as the alkyl group of R 61 ⁇ R 63.
  • X 4 is preferably a single bond, —COO— or —CONH—, and more preferably a single bond or —COO—.
  • the alkylene group for L 4 is preferably an alkylene group having 1 to 8 carbon atoms such as an optionally substituted methylene group, ethylene group, propylene group, butylene group, hexylene group and octylene group.
  • Ar 4 is more preferably an aromatic ring group having 6 to 18 carbon atoms which may have a substituent, and particularly preferably a benzene ring group, a naphthalene ring group or a biphenylene ring group.
  • the repeating unit (b) preferably has a hydroxystyrene structure. That is, Ar 4 is preferably a benzene ring group.
  • repeating unit (b) represented by the general formula (I) specific examples described in paragraphs 0107 to 0108 of JP-A-2014-106298 can be used, and the contents thereof are described in the present specification. Embedded in the book.
  • Resin (A) may contain two or more types of repeating units represented by general formula (I).
  • the resin (A) may contain a repeating unit having a group capable of generating an acid upon irradiation with actinic rays or radiation.
  • repeating unit having a group capable of generating an acid upon irradiation with actinic rays or radiation include, for example, repeating onium cations contained in resins P-65 to P-70 of specific examples of the resin (A) described later. Examples include units.
  • the content molar ratio of each repeating structural unit is the standard developing solution suitability of the resist, the substrate adhesion, the resist profile, and the resolving power that is a general necessary performance of the resist In order to adjust heat resistance, sensitivity, etc., it is set appropriately.
  • the form of the resin (A) of the present invention may be any of random type, block type, comb type, and star type.
  • Resin (A) can be synthesized, for example, by radical, cation, or anionic polymerization of unsaturated monomers corresponding to each structure. It is also possible to obtain the desired resin by conducting a polymer reaction after polymerization using an unsaturated monomer corresponding to the precursor of each structure.
  • an unsaturated monomer and a polymerization initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the unsaturated monomer and the polymerization initiator is added to the heating solvent for 1 to 10 hours.
  • the dropping polymerization method etc. which are dropped and added over are mentioned, and the dropping polymerization method is preferable.
  • Examples of the solvent used for the polymerization include a solvent that can be used in preparing the actinic ray-sensitive or radiation-sensitive resin composition described below, and more preferably the composition of the present invention. Polymerization is preferably carried out using the same solvent as used in the above. Thereby, generation
  • the polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon.
  • a polymerization initiator a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization.
  • azo initiator an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable.
  • Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2'-azobis (2-methylpropionate) and the like.
  • the polymerization may be performed in the presence of a chain transfer agent (for example, alkyl mercaptan).
  • the concentration of the reaction is 5 to 70% by mass, preferably 10 to 50% by mass.
  • the reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 40 ° C to 100 ° C.
  • the reaction time is usually 1 to 48 hours, preferably 1 to 24 hours, and more preferably 1 to 12 hours.
  • Purification can be accomplished by a liquid-liquid extraction method that removes residual monomers and oligomer components by combining water and an appropriate solvent, and a purification method in a solution state such as ultrafiltration that extracts and removes only those having a specific molecular weight or less.
  • Reprecipitation method that removes residual monomer by coagulating resin in poor solvent by dripping resin solution into poor solvent and purification in solid state such as washing filtered resin slurry with poor solvent
  • a normal method such as a method can be applied.
  • the resin is precipitated as a solid by contacting a solvent (poor solvent) in which the resin is hardly soluble or insoluble in a volume amount of 10 times or less, preferably 10 to 5 times that of the reaction solution.
  • the solvent (precipitation or reprecipitation solvent) used for the precipitation or reprecipitation operation from the polymer solution may be a poor solvent for the polymer, and depending on the type of polymer, hydrocarbon, halogenated hydrocarbon, nitro compound , Ethers, ketones, esters, carbonates, alcohols, carboxylic acids, water, mixed solvents containing these solvents, and the like.
  • a precipitation or reprecipitation solvent a solvent containing at least an alcohol (particularly methanol or the like) or water is preferable.
  • the amount of the precipitation or reprecipitation solvent used can be appropriately selected in consideration of efficiency, yield, and the like, but generally, 100 to 10,000 parts by mass, preferably 200 to 2000 parts by mass with respect to 100 parts by mass of the polymer solution, More preferably, it is 300 to 1000 parts by mass.
  • the temperature at the time of precipitation or reprecipitation can be appropriately selected in consideration of efficiency and operability, but is usually about 0 to 50 ° C., preferably around room temperature (for example, about 20 to 35 ° C.).
  • the precipitation or reprecipitation operation can be performed by a known method such as a batch method or a continuous method using a conventional mixing vessel such as a stirring tank.
  • Precipitated or re-precipitated polymer is usually subjected to conventional solid-liquid separation such as filtration and centrifugation, and dried before use. Filtration is performed using a solvent-resistant filter medium, preferably under pressure. Drying is performed at a temperature of about 30 to 100 ° C., preferably about 30 to 50 ° C. under normal pressure or reduced pressure (preferably under reduced pressure).
  • the resin may be dissolved again in a solvent and contacted with a solvent in which the resin is hardly soluble or insoluble. That is, after completion of the radical polymerization reaction, a solvent in which the polymer is hardly soluble or insoluble is contacted to precipitate the resin (step a), the resin is separated from the solution (step b), and the resin solution A is dissolved again in the solvent.
  • step c Preparation (step c), and then contacting the resin solution A with a solvent in which the resin is hardly soluble or insoluble in a volume amount less than 10 times that of the resin solution A (preferably 5 times or less volume) It may be a method including depositing a solid (step d) and separating the deposited resin (step e).
  • the polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon.
  • a polymerization initiator a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization.
  • azo initiator an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable.
  • Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2'-azobis (2-methylpropionate) and the like.
  • an initiator is added or added in portions, and after completion of the reaction, it is put into a solvent and a desired polymer is recovered by a method such as powder or solid recovery.
  • the concentration of the reaction is 5 to 50% by mass, preferably 10 to 30% by mass.
  • the reaction temperature is usually 10 ° C. to 150 ° C., preferably 30 ° C. to 120 ° C., more preferably 60 to 100 ° C.
  • the molecular weight of the resin (A) according to the present invention is not particularly limited, but the weight average molecular weight is preferably in the range of 1000 to 100,000, more preferably in the range of 1500 to 60000, and in the range of 2000 to 30000. It is particularly preferred. By setting the weight average molecular weight in the range of 1,000 to 100,000, it is possible to prevent deterioration of heat resistance and dry etching resistance, and also prevent deterioration of developability and film formation due to increased viscosity. be able to.
  • the weight average molecular weight of the resin indicates a polystyrene equivalent molecular weight measured by GPC (Gel Permeation Chromatography) (carrier: THF (Tetrahydrofuran) or N-methyl-2-pyrrolidone).
  • the dispersity (Mw / Mn) is preferably 1.00 to 5.00, more preferably 1.03 to 3.50, and still more preferably 1.05 to 2.50.
  • the resin (A) of the present invention can be used alone or in combination of two or more.
  • the content of the resin (A) is preferably 20 to 99% by mass, more preferably 30 to 89% by mass, based on the total solid content in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention. 40 to 79% by mass is particularly preferable.
  • composition of the present invention contains a compound that generates acid upon irradiation with actinic ray or radiation (hereinafter also referred to as “acid generator”).
  • the acid generator is not particularly limited as long as it is a publicly known acid generator, but upon irradiation with actinic rays or radiation, at least any of organic acids such as sulfonic acid, bis (alkylsulfonyl) imide, and tris (alkylsulfonyl) methide. Compounds that generate such are preferred.
  • R 201 , R 202 and R 203 each independently represents an organic group.
  • the organic group as R 201 , R 202 and R 203 generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.
  • R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group.
  • Examples of the group formed by combining two members out of R 201 to R 203 include an alkylene group (eg, butylene group, pentylene group).
  • Z ⁇ represents a non-nucleophilic anion (an anion having an extremely low ability to cause a nucleophilic reaction).
  • Non-nucleophilic anions include, for example, sulfonate anions (aliphatic sulfonate anions, aromatic sulfonate anions, camphor sulfonate anions, etc.), carboxylate anions (aliphatic carboxylate anions, aromatic carboxylate anions, aralkyls). Carboxylate anion, etc.), sulfonylimide anion, bis (alkylsulfonyl) imide anion, tris (alkylsulfonyl) methide anion and the like.
  • the aliphatic moiety in the aliphatic sulfonate anion and aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group, preferably a linear or branched alkyl group having 1 to 30 carbon atoms and a carbon number. Examples include 3 to 30 cycloalkyl groups.
  • the aromatic group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a tolyl group, and a naphthyl group.
  • the alkyl group, cycloalkyl group and aryl group mentioned above may have a substituent. Specific examples thereof include nitro groups, halogen atoms such as fluorine atoms, carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkoxy groups (preferably having 1 to 15 carbon atoms), cycloalkyl groups (preferably having 3 to 15 carbon atoms). ), An aryl group (preferably 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably 2 to 7 carbon atoms), an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 2 carbon atoms).
  • an alkylthio group preferably 1 to 15 carbon atoms
  • an alkylsulfonyl group preferably 1 to 15 carbon atoms
  • an alkyliminosulfonyl group preferably 2 to 15 carbon atoms
  • an aryloxysulfonyl group preferably a carbon atom Number 6 to 20
  • alkylaryloxysulfonyl group preferably having 7 to 20 carbon atoms
  • cycloalkylary Examples thereof include an oxysulfonyl group (preferably having 10 to 20 carbon atoms), an alkyloxyalkyloxy group (preferably having 5 to 20 carbon atoms), a cycloalkylalkyloxyalkyloxy group (preferably having 8 to 20 carbon atoms), and the like.
  • examples of the substituent further include an alkyl group (preferably having a carbon number of 1 to 15).
  • aralkyl group in the aralkyl carboxylate anion preferably an aralkyl group having 7 to 12 carbon atoms such as benzyl group, phenethyl group, naphthylmethyl group, naphthylethyl group, naphthylbutyl group and the like can be mentioned.
  • Examples of the sulfonylimide anion include saccharin anion.
  • the alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methide anion is preferably an alkyl group having 1 to 5 carbon atoms.
  • substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, cycloalkylaryloxysulfonyl groups, and the like.
  • a fluorine atom or an alkyl group substituted with a fluorine atom is preferred.
  • alkyl groups in the bis (alkylsulfonyl) imide anion may be bonded to each other to form a ring structure. This increases the acid strength.
  • non-nucleophilic anions examples include fluorinated phosphorus (eg, PF 6 ⁇ ), fluorinated boron (eg, BF 4 ⁇ ), fluorinated antimony (eg, SbF 6 ⁇ ), and the like. .
  • non-nucleophilic anion examples include an aliphatic sulfonate anion in which at least ⁇ -position of the sulfonic acid is substituted with a fluorine atom, an aromatic sulfonate anion substituted with a fluorine atom or a group having a fluorine atom, and an alkyl group having a fluorine atom And a tris (alkylsulfonyl) methide anion in which the alkyl group is substituted with a fluorine atom.
  • the non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (more preferably 4 to 8 carbon atoms), a benzenesulfonate anion having a fluorine atom, still more preferably a nonafluorobutanesulfonate anion, or perfluorooctane.
  • the pKa of the generated acid is preferably ⁇ 1 or less in order to improve sensitivity.
  • an anion represented by the following general formula (AN1) can be mentioned as a preferred embodiment.
  • Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
  • R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom or an alkyl group, and when there are a plurality of R 1 and R 2 , they may be the same or different.
  • L represents a divalent linking group, and when there are a plurality of L, L may be the same or different.
  • A represents a cyclic organic group.
  • X represents an integer of 1 to 20
  • y represents an integer of 0 to 10
  • z represents an integer of 0 to 10.
  • the alkyl group in the alkyl group substituted with a fluorine atom of Xf preferably has 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms.
  • the alkyl group substituted with a fluorine atom of Xf is preferably a perfluoroalkyl group.
  • Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms.
  • Specific examples of Xf include a fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , CH 2 CH 2 C 4 F 9 may be mentioned, among which a fluorine atom and CF 3 are preferable.
  • both Xf are fluorine atoms.
  • the alkyl group of R 1 and R 2 may have a substituent (preferably a fluorine atom), and preferably has 1 to 4 carbon atoms. More preferred is a perfluoroalkyl group having 1 to 4 carbon atoms. Specific examples of the alkyl group having a substituent for R 1 and R 2 include CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , and C 7 F 15.
  • C 8 F 17, CH 2 CF 3, CH 2 CH 2 CF 3, CH 2 C 2 F 5, CH 2 CH 2 C 2 F 5, CH 2 C 3 F 7, CH 2 CH 2 C 3 F 7, CH 2 C 4 F 9 and CH 2 CH 2 C 4 F 9 can be mentioned, among which CF 3 is preferable.
  • R 1 and R 2 are preferably a fluorine atom or CF 3 .
  • X is preferably 1 to 10, and more preferably 1 to 5.
  • Y is preferably 0 to 4, more preferably 0.
  • Z is preferably from 0 to 5, and more preferably from 0 to 3.
  • the divalent linking group of L is not particularly limited, and is —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO 2 —, an alkylene group, a cycloalkylene group, An alkenylene group or a linking group in which a plurality of these groups are linked can be exemplified, and a linking group having a total carbon number of 12 or less is preferred. Of these, —COO—, —OCO—, —CO—, and —O— are preferable, and —COO— and —OCO— are more preferable.
  • the cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and is not limited to alicyclic groups, aryl groups, and heterocyclic groups (not only those having aromaticity but also aromaticity). And the like).
  • the alicyclic group may be monocyclic or polycyclic, and may be a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, or a cyclooctyl group, a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, or a tetracyclododecane group.
  • a polycyclic cycloalkyl group such as a nyl group and an adamantyl group is preferred.
  • an alicyclic group having a bulky structure having 7 or more carbon atoms such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, an adamantyl group, or the like is present in the film in the post-exposure heating step. Diffusivity can be suppressed, which is preferable from the viewpoint of improving MEEF.
  • aryl group examples include a benzene ring, a naphthalene ring, a phenanthrene ring, and an anthracene ring.
  • heterocyclic group examples include those derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Of these, those derived from a furan ring, a thiophene ring and a pyridine ring are preferred.
  • examples of the cyclic organic group may include a lactone structure, and specific examples include those represented by the general formulas (LC1-1) to (LC1-17) that may be included in the resin (A). Can be mentioned.
  • the cyclic organic group may have a substituent, and examples of the substituent include an alkyl group (which may be linear, branched or cyclic, preferably having 1 to 12 carbon atoms), cyclo Alkyl group (which may be monocyclic, polycyclic or spiro ring, preferably having 3 to 20 carbon atoms), aryl group (preferably having 6 to 14 carbon atoms), hydroxy group, alkoxy group, ester group, amide Group, urethane group, ureido group, thioether group, sulfonamide group, sulfonic acid ester group and the like.
  • the carbon constituting the cyclic organic group (carbon contributing to ring formation) may be a carbonyl carbon.
  • Examples of the organic group for R 201 , R 202, and R 203 include an aryl group, an alkyl group, and a cycloalkyl group.
  • R 201 , R 202 and R 203 at least one is preferably an aryl group, more preferably all three are aryl groups.
  • aryl group in addition to a phenyl group, a naphthyl group, and the like, a heteroaryl group such as an indole residue and a pyrrole residue can be used.
  • Preferred examples of the alkyl group and cycloalkyl group represented by R 201 to R 203 include a linear or branched alkyl group having 1 to 10 carbon atoms and a cycloalkyl group having 3 to 10 carbon atoms.
  • alkyl group More preferable examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, and an n-butyl group. More preferable examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. These groups may further have a substituent.
  • substituents examples include nitro groups, halogen atoms such as fluorine atoms, carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkoxy groups (preferably having 1 to 15 carbon atoms), cycloalkyl groups (preferably having 3 to 15 carbon atoms). ), An aryl group (preferably 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably 2 to 7 carbon atoms), an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 2 carbon atoms). 7) and the like, but are not limited thereto.
  • halogen atoms such as fluorine atoms, carboxyl groups, hydroxyl groups, amino groups, cyano groups, alkoxy groups (preferably having 1 to 15 carbon atoms), cycloalkyl groups (preferably having 3 to 15 carbon atoms).
  • An aryl group preferably 6 to 14 carbon atoms
  • an alkoxycarbonyl group preferably 2
  • the acid generator can be used alone or in combination of two or more.
  • the content of the photoacid generator is preferably 0.1 to 50% by mass, more preferably 0.5 to 45%, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition. % By mass, more preferably 1 to 40% by mass.
  • solvent (coating solvent)
  • the solvent that can be used in preparing the composition is not particularly limited as long as it dissolves each component.
  • alkylene glycol monoalkyl ether carboxylate (Propylene Glycol Monomethyl Ether Acetate: PGMEA) Alias 1-methoxy-2-acetoxypropane), alkylene glycol monoalkyl ether (Propylene Glycol Monomethyl Ether: PGME; 1-methoxy-2-propanol), lactate alkyl ester (ethyl lactate, etc.); Methyl lactate, etc.), cyclic lactones ( ⁇ -butyrolactone, etc., preferably 4 to 10 carbon atoms), chain or cyclic ketones (2-heptanone, cyclohexanone, etc., preferably 4 to 10 carbon atoms), alkanes
  • Examples include xylene carbonate (ethylene carbonate, propylene carbonate, etc.), alkyl carboxylates (preferably alkyl
  • alkylene glycol monoalkyl ether carboxylate and alkylene glycol monoalkyl ether are preferred.
  • solvents may be used alone or in combination of two or more.
  • the mass ratio of the solvent having a hydroxyl group and the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 60/40.
  • the solvent having a hydroxyl group is preferably an alkylene glycol monoalkyl ether, and the solvent having no hydroxyl group is preferably an alkylene glycol monoalkyl ether carboxylate.
  • the actinic ray-sensitive or radiation-sensitive resin composition may further contain a basic compound.
  • the basic compound is preferably a compound having a stronger basicity than phenol.
  • this basic compound is preferably an organic basic compound, and more preferably a nitrogen-containing basic compound.
  • nitrogen-containing basic compound that can be used is not particularly limited, for example, compounds classified into the following (a) to (ki) can be used.
  • Each R independently represents a hydrogen atom or an organic group. However, at least one of the three Rs is an organic group. This organic group is a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an aryl group, or an aralkyl group.
  • the carbon number of the alkyl group as R is not particularly limited, but is usually 1 to 20, preferably 1 to 12.
  • the carbon number of the cycloalkyl group as R is not particularly limited, but is usually 3 to 20, and preferably 5 to 15.
  • the number of carbon atoms of the aryl group as R is not particularly limited, but is usually 6 to 20, and preferably 6 to 10. Specific examples include a phenyl group and a naphthyl group.
  • the carbon number of the aralkyl group as R is not particularly limited, but is usually 7 to 20, preferably 7 to 11. Specific examples include a benzyl group.
  • a hydrogen atom may be substituted with a substituent.
  • substituents include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, a hydroxy group, a carboxy group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group, and an alkyloxycarbonyl group.
  • Specific examples of the compound represented by the general formula (BS-1) include tri-n-butylamine, tri-n-pentylamine, tri-n-octylamine, tri-n-decylamine, triisodecylamine, dicyclohexyl.
  • preferred basic compounds represented by the general formula (BS-1) include those in which at least one R is an alkyl group substituted with a hydroxy group. Specific examples include triethanolamine and N, N-dihydroxyethylaniline.
  • the alkyl group as R may have an oxygen atom in the alkyl chain. That is, an oxyalkylene chain may be formed.
  • an oxyalkylene chain As the oxyalkylene chain, —CH 2 CH 2 O— is preferable.
  • tris (methoxyethoxyethyl) amine and compounds exemplified in the 60th and subsequent lines of column 3 of US6040112 can be mentioned.
  • Examples of the basic compound represented by the general formula (BS-1) include the following.
  • (A) Compound having nitrogen-containing heterocyclic structure This nitrogen-containing heterocyclic ring may have aromaticity or may not have aromaticity. Moreover, you may have two or more nitrogen atoms. Furthermore, you may contain hetero atoms other than nitrogen. Specifically, for example, compounds having an imidazole structure (2-phenylbenzimidazole, 2,4,5-triphenylimidazole, etc.), compounds having a piperidine structure [N-hydroxyethylpiperidine and bis (1,2,2) , 6,6-pentamethyl-4-piperidyl) sebacate], compounds having a pyridine structure (such as 4-dimethylaminopyridine), and compounds having an antipyrine structure (such as antipyrine and hydroxyantipyrine).
  • imidazole structure (2-phenylbenzimidazole, 2,4,5-triphenylimidazole, etc.
  • compounds having a piperidine structure [N-hydroxyethylpiperidine and bis (1,2,2) , 6,6-penta
  • a compound having two or more ring structures is also preferably used.
  • Specific examples include 1,5-diazabicyclo [4.3.0] non-5-ene and 1,8-diazabicyclo [5.4.0] -undec-7-ene.
  • An amine compound having a phenoxy group is a compound having a phenoxy group at the terminal opposite to the N atom of the alkyl group contained in the amine compound.
  • the phenoxy group is, for example, a substituent such as an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxy group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, an acyloxy group, and an aryloxy group. You may have.
  • This compound more preferably has at least one oxyalkylene chain between the phenoxy group and the nitrogen atom.
  • the number of oxyalkylene chains in one molecule is preferably 3 to 9, and more preferably 4 to 6.
  • —CH 2 CH 2 O— is particularly preferable.
  • the amine compound having a phenoxy group is prepared by reacting, for example, a primary or secondary amine having a phenoxy group with a haloalkyl ether, and adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide or tetraalkylammonium. And then extracted with an organic solvent such as ethyl acetate and chloroform.
  • the amine compound having a phenoxy group reacts by heating a primary or secondary amine and a haloalkyl ether having a phenoxy group at the terminal, and a strong base such as sodium hydroxide, potassium hydroxide or tetraalkylammonium. It can also be obtained by adding an aqueous solution and then extracting with an organic solvent such as ethyl acetate and chloroform.
  • ammonium salt As the basic compound, an ammonium salt can also be used as appropriate.
  • anion of the ammonium salt include halides, sulfonates, borates, and phosphates. Of these, halides and sulfonates are particularly preferred.
  • halide chloride, bromide and iodide are particularly preferable.
  • sulfonate an organic sulfonate having 1 to 20 carbon atoms is particularly preferable.
  • examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates.
  • the alkyl group contained in the alkyl sulfonate may have a substituent.
  • substituents include a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, an acyl group, and an aryl group.
  • alkyl sulfonate examples include methane sulfonate, ethane sulfonate, butane sulfonate, hexane sulfonate, octane sulfonate, benzyl sulfonate, trifluoromethane sulfonate, pentafluoroethane sulfonate, and nonafluorobutane sulfonate.
  • aryl group contained in the aryl sulfonate examples include a phenyl group, a naphthyl group, and an anthryl group. These aryl groups may have a substituent.
  • this substituent for example, a linear or branched alkyl group having 1 to 6 carbon atoms and a cycloalkyl group having 3 to 6 carbon atoms are preferable. Specifically, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl and cyclohexyl groups are preferred.
  • the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.
  • the ammonium salt may be hydroxide or carboxylate.
  • the ammonium salt is a tetraalkylammonium hydroxide having 1 to 8 carbon atoms (tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra- (n-butyl) ammonium hydroxide, etc.). It is particularly preferred.
  • Preferred basic compounds include, for example, guanidine, aminopyridine, aminoalkylpyridine, aminopyrrolidine, indazole, imidazole, pyrazole, pyrazine, pyrimidine, purine, imidazoline, pyrazoline, piperazine, aminomorpholine and aminoalkylmorpholine. . These may further have a substituent.
  • Preferred substituents include, for example, amino group, aminoalkyl group, alkylamino group, aminoaryl group, arylamino group, alkyl group, alkoxy group, acyl group, acyloxy group, aryl group, aryloxy group, nitro group, hydroxyl group And a cyano group.
  • Particularly preferable basic compounds include, for example, guanidine, 1,1-dimethylguanidine, 1,1,3,3-tetramethylguanidine, imidazole, 2-methylimidazole, 4-methylimidazole, N-methylimidazole, 2 -Phenylimidazole, 4,5-diphenylimidazole, 2,4,5-triphenylimidazole, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethylaminopyridine, 4-dimethylaminopyridine, 2- Diethylaminopyridine, 2- (aminomethyl) pyridine, 2-amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethyl Pyridine, 4-aminoethylpyridine, 3-a Nopyrrolidine, piperazine, N- (2-aminoethyl) piperazine,
  • a low molecular compound having a nitrogen atom and having a group capable of leaving by the action of an acid comprises a low molecular compound having a nitrogen atom and having a group capable of leaving by the action of an acid (hereinafter referred to as “low molecular compound”).
  • low molecular compound a low molecular compound having a nitrogen atom and having a group capable of leaving by the action of an acid
  • the low molecular compound (D) preferably has basicity after the group capable of leaving by the action of an acid is eliminated.
  • the group capable of leaving by the action of an acid is not particularly limited, but is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group, or a hemiaminal ether group, and a carbamate group or a hemiaminal ether group. It is particularly preferred.
  • the molecular weight of the low molecular compound (D) having a group capable of leaving by the action of an acid is preferably 100 to 1000, more preferably 100 to 700, and particularly preferably 100 to 500.
  • the compound (D) is preferably an amine derivative having a group on the nitrogen atom that is eliminated by the action of an acid.
  • Compound (D) may have a carbamate group having a protecting group on the nitrogen atom.
  • the protecting group constituting the carbamate group can be represented by the following general formula (d-1).
  • R ′ each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. R ′ may be bonded to each other to form a ring.
  • R ′ is preferably a linear or branched alkyl group, cycloalkyl group, or aryl group. More preferably, it is a linear or branched alkyl group or cycloalkyl group.
  • the compound (D) can also be constituted by arbitrarily combining the basic compound and the structure represented by the general formula (d-1).
  • the compound (D) has a structure represented by the following general formula (A).
  • the compound (D) may correspond to the above basic compound as long as it is a low molecular compound having a group capable of leaving by the action of an acid.
  • Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
  • n 2
  • the two Ras may be the same or different, and the two Ras are bonded to each other to form a divalent heterocyclic hydrocarbon group (preferably having 20 or less carbon atoms) or a derivative thereof. May be formed.
  • Rb each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkoxyalkyl group.
  • Rb when one or more Rb is a hydrogen atom, at least one of the remaining Rb is a cyclopropyl group, a 1-alkoxyalkyl group or an aryl group.
  • At least two Rb may combine to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof.
  • N represents an integer of 0 to 2
  • m represents an integer of 1 to 3
  • n + m 3.
  • the alkyl group, cycloalkyl group, aryl group and aralkyl group represented by Ra and Rb are functional groups such as hydroxyl group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group and oxo group. , An alkoxy group and a halogen atom may be substituted. The same applies to the alkoxyalkyl group represented by Rb.
  • the alkyl group, cycloalkyl group, aryl group, and aralkyl group of the Ra and / or Rb (these alkyl group, cycloalkyl group, aryl group, and aralkyl group are substituted with the functional group, alkoxy group, or halogen atom).
  • a group derived from a linear or branched alkane such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, etc.
  • a group derived from these alkanes for example, A group substituted with one or more cycloalkyl groups such as a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group
  • a group derived from a cycloalkane such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane, noradamantane, a group derived from these cycloalkanes, for example, a methyl group, an ethyl group, an cycloalkyl
  • Examples of the divalent heterocyclic hydrocarbon group (preferably having a carbon number of 1 to 20) or a derivative thereof formed by bonding of Ra to each other include pyrrolidine, piperidine, morpholine, 1, 4, 5 , 6-tetrahydropyrimidine, 1,2,3,4-tetrahydroquinoline, 1,2,3,6-tetrahydropyridine, homopiperazine, 4-azabenzimidazole, benzotriazole, 5-azabenzotriazole, 1H-1, 2,3-triazole, 1,4,7-triazacyclononane, tetrazole, 7-azaindole, indazole, benzimidazole, imidazo [1,2-a] pyridine, (1S, 4S)-(+)-2 , 5-diazabicyclo [2.2.1] heptane, 1,5,7-triazabicyclo [4.4.0] dec-5-e Derived from heterocyclic compounds such as, indole, indoline, 1,2,3,
  • the compound represented by the general formula (A) can be synthesized based on JP-A No. 2007-298569, JP-A No. 2009-199021 and the like.
  • the low molecular compound (D) can be used singly or in combination of two or more.
  • the composition of the present invention may or may not contain the low molecular compound (D), but when it is contained, the content of the compound (D) is the total solid of the composition combined with the basic compound described above.
  • the amount is usually 0.001 to 20% by mass, preferably 0.001 to 10% by mass, and more preferably 0.01 to 5% by mass, based on the minute.
  • the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment.
  • the acid generator / [compound (D) + basic compound] (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.
  • the nitrogen-containing basic compound has a proton acceptor functional group and is decomposed by irradiation with actinic rays or radiation, resulting in a decrease or disappearance of the proton acceptor, or an acid from the proton acceptor
  • Examples thereof include compounds that generate a compound that has changed to guanidine, or guanidine compounds.
  • the description in paragraphs 0201 to 0236 of JP-A-2014-106298 can be incorporated, and the contents thereof are incorporated herein.
  • examples of compounds that can be used in the composition according to the present invention include compounds synthesized in Examples of JP-A No. 2002-363146, compounds described in Paragraph 0108 of JP-A No. 2007-298569, and the like. It is done.
  • a photosensitive basic compound may be used as the basic compound.
  • the photosensitive basic compound include JP-T-2003-524799 and J. Photopolym. Sci & Tech. Vol. 8, P.I. 543-553 (1995) and the like can be used.
  • the molecular weight of the basic compound is usually 100 to 1500, preferably 150 to 1300, and more preferably 200 to 1000.
  • composition according to the present invention contains a basic compound
  • its content is preferably 0.01 to 8.0% by mass based on the total solid content of the composition, preferably 0.1 to The content is more preferably 5.0% by mass, and particularly preferably 0.2 to 4.0% by mass.
  • the molar ratio of the basic compound to the photoacid generator is preferably 0.01 to 10, more preferably 0.05 to 5, and still more preferably 0.1 to 3. If this molar ratio is excessively increased, sensitivity and / or resolution may be reduced. If this molar ratio is excessively small, there is a possibility that pattern thinning occurs between exposure and heating (post-bake). More preferably, it is 0.05-5, and still more preferably 0.1-3.
  • Hydrophobic resin (HR) The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may have a hydrophobic resin (HR) separately from the resin (A).
  • the hydrophobic resin (HR) preferably contains a group having a fluorine atom, a group having a silicon atom, or a hydrocarbon group having 5 or more carbon atoms in order to be unevenly distributed on the film surface. These groups may be present in the main chain of the resin or may be substituted on the side chain. Specific examples of the hydrophobic resin (HR) are shown below.
  • hydrophobic resin those described in JP 2011-248019 A, JP 2010-175859 A, and JP 2012-032544 A can also be preferably used. Hydrophobic resin can be used individually by 1 type or in combination of 2 or more types.
  • Surfactant The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention may further contain a surfactant. As this surfactant, fluorine-based and / or silicon-based surfactants are particularly preferable.
  • fluorine-based and / or silicon-based surfactant examples include Megafac F176 and Megafac R08 manufactured by Dainippon Ink and Chemicals, PF656 and PF6320 manufactured by OMNOVA, and Troisol S manufactured by Troy Chemical Co., Ltd. -366, Fluorard FC430 manufactured by Sumitomo 3M Limited, and polysiloxane polymer KP-341 manufactured by Shin-Etsu Chemical Co., Ltd.
  • Surfactants other than fluorine and / or silicon may be used.
  • examples of the surfactant include nonionic surfactants such as polyoxyethylene alkyl ethers and polyoxyethylene alkyl aryl ethers.
  • surfactants can be used as appropriate.
  • surfactant that can be used include surfactants described in [0273] and after in US 2008 / 0248425A1.
  • Surfactant may be used alone or in combination of two or more.
  • the actinic ray-sensitive or radiation-sensitive resin composition further contains a surfactant
  • the amount used is preferably 0.0001 to 2% by mass based on the total solid content of the composition, and more The amount is preferably 0.001 to 1% by mass.
  • the actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes carboxylic acid, carboxylic acid onium salt, Proceeding of SPIE, 2724, 355 (1996). Or the like, and a dissolution inhibiting compound having a molecular weight of 3000 or less, a dye, a plasticizer, a photosensitizer, a light absorber, an antioxidant, and the like can be appropriately contained.
  • carboxylic acid is preferably used for improving the performance.
  • aromatic carboxylic acids such as benzoic acid and naphthoic acid are preferable.
  • the content of the carboxylic acid is preferably 0.01 to 10% by mass, more preferably 0.01 to 5% by mass, and still more preferably 0.01 to 3% by mass in the total solid content of the composition.
  • the actinic ray-sensitive or radiation-sensitive resin composition in the present invention is preferably used in a film thickness of 10 to 250 nm, more preferably in a film thickness of 20 to 200 nm, from the viewpoint of improving resolution. Preferably, it is preferably used at 30 to 100 nm.
  • Such a film thickness can be obtained by setting the solid content concentration in the composition to an appropriate range to give an appropriate viscosity and improving the coating property and film forming property.
  • the solid content concentration of the actinic ray-sensitive or radiation-sensitive resin composition in the present invention is usually 1.0 to 10% by mass, preferably 2.0 to 5.7% by mass, more preferably 2.0. Is 5.3 mass%.
  • the resist solution can be uniformly applied on the substrate, and further, a resist pattern having excellent line width roughness can be formed.
  • the solid content concentration is 10% by mass or less, preferably 5.7% by mass or less, which suppresses aggregation of the material in the resist solution, particularly the photoacid generator. As a result, it is considered that a uniform resist film was formed.
  • the solid content concentration is a weight percentage of the weight of other resist components excluding the solvent with respect to the total weight of the actinic ray-sensitive or radiation-sensitive resin composition.
  • the above components are dissolved in a predetermined organic solvent, preferably the above mixed solvent, filtered, and then applied onto a predetermined support (substrate).
  • a predetermined organic solvent preferably the above mixed solvent
  • the pore size of the filter used for filter filtration is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, and still more preferably 0.03 ⁇ m or less made of polytetrafluoroethylene, polyethylene, or nylon.
  • filter filtration for example, as in JP-A-2002-62667, circulation filtration may be performed, or filtration may be performed by connecting a plurality of types of filters in series or in parallel.
  • the composition may be filtered multiple times. Furthermore, you may perform a deaeration process etc. with respect to a composition before and behind filter filtration.
  • Various materials used in the pattern forming method of the present invention preferably do not contain impurities such as metals.
  • the content of impurities contained in these materials is preferably 1 ppm or less, more preferably 10 ppb or less, still more preferably 100 ppt or less, particularly preferably 10 ppt or less, and substantially free (below the detection limit of the measuring device). Is most preferable.
  • Examples of the method for removing impurities such as metals from the various materials described above include filtration using a filter.
  • the pore size of the filter is preferably 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less.
  • a filter made of polytetrafluoroethylene, polyethylene, or nylon is preferable.
  • a filter that has been washed in advance with an organic solvent may be used.
  • a plurality of types of filters may be connected in series or in parallel. When a plurality of types of filters are used, filters having different pore diameters and / or materials may be used in combination.
  • various materials may be filtered a plurality of times, and the step of filtering a plurality of times may be a circulating filtration step.
  • a material having a low metal content is selected as a material constituting the various materials, and filter filtration is performed on the materials constituting the various materials.
  • the method include distillation under a condition in which contamination is suppressed as much as possible by lining the inside of the apparatus with Teflon (registered trademark).
  • Teflon registered trademark
  • the preferable conditions for filter filtration performed on the raw materials constituting the various materials are the same as those described above.
  • a method for improving the surface roughness of the pattern may be applied to the pattern formed by the method of the present invention.
  • a method for improving the surface roughness of the pattern for example, a method of treating a resist pattern with a plasma of a hydrogen-containing gas disclosed in International Publication Pamphlet 2014/002808 can be mentioned.
  • JP 2004-235468, US Published Patent Application 2010/0020297, JP 2009-19969, Proc. Of SPIE Vol. 8328 83280N-1 “EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement” may be applied.
  • the pattern forming method of the present invention can also be used for guide pattern formation in DSA (Directed Self-Assembly) (see, for example, ACS Nano Vol. 4 No. 8, Pages 4815-4823).
  • DSA Directed Self-Assembly
  • the resist pattern formed by the above method can be used as a core material (core) of a spacer process disclosed in, for example, Japanese Patent Application Laid-Open Nos. 3-270227 and 2013-164509.
  • the present invention also relates to an electronic device manufacturing method including the above-described reverse pattern forming method of the present invention.
  • the electronic device of the present invention is suitably mounted on electrical and electronic equipment (home appliances, OA (Office Appliance) / media related equipment, optical equipment, communication equipment, etc.).
  • electrical and electronic equipment home appliances, OA (Office Appliance) / media related equipment, optical equipment, communication equipment, etc.
  • the composition ratio (molar ratio; corresponding in order from the left) measured by 13 C-NMR was 40/60.
  • the weight average molecular weight, number average molecular weight, degree of dispersion, and composition ratio of the obtained resin were determined by the same method as the resin (R-1) described above.
  • the resin (A) the following resins A-2 to A-5 were synthesized by a known method.
  • the hydrophobic resin HR-1 shown in Table 4 is shown below. The following weight average molecular weight, number average molecular weight, degree of dispersion, and composition ratio were determined by the same method as for the resin (R-1) described above.
  • An organic antireflection film ARC29SR (manufactured by Nissan Chemical Industries, Ltd.) was applied onto the silicon wafer and baked at 205 ° C. for 60 seconds to form an antireflection film having a thickness of 95 nm.
  • a Si-containing base film (Nissan Chemical Co., Ltd.) to be processed was applied thereon and baked at 205 ° C. for 60 seconds to form a Si-containing base film having a thickness of 50 nm.
  • the resist composition prepared above was applied and baked at 90 ° C. for 60 seconds (Prebake: PB) to form a resist film having a thickness of 90 nm.
  • ArF excimer laser immersion exposure machine (XT1700i, NA1.20, Dipole, outer sigma 0.950; manufactured by ASML) through a 6% halftone mask with a line width of 45 nm and a 1: 1 line and space pattern. Were exposed using. Ultra pure water was used as the immersion liquid. Then, it heated at the temperature of Table 5 for 60 seconds (PEB).
  • the obtained wafer was developed with butyl acetate.
  • the wafer was heated at 200 ° C. for 60 seconds to form a line-and-space pattern with a space width of 35 nm and a line width of 60 nm.
  • the image reversal composition prepared above was applied onto the obtained line and space pattern and baked at 90 ° C. for 60 seconds.
  • This image reversal film was inverted by applying an etching process under the following etching conditions (1) to form a line pattern.
  • Comparative Example 1 described in Table 5 below the resist film is developed with a 2.38% TMAH (Tetramethylammonium hydroxide) developer, and rinsed with water to perform an inversion etching process. A line pattern was obtained, and the following evaluation was performed on this line pattern.
  • TMAH Tetramethylammonium hydroxide
  • the cross-sectional shape of the processed pattern was observed using a scanning electron microscope (S-4800) manufactured by Hitachi High-Tech, and the superiority or inferiority of the processing performance was judged. It was judged that the image reversal composition remained after the resist underlayer film was etched and the resist underlayer film was etched to a depth of 50 nm, and the image reversal composition did not remain.
  • S-4800 scanning electron microscope

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Abstract

La présente invention concerne un procédé permettant de former un motif inverse, ledit procédé comprenant : (a) une étape consistant à former un film sensible à un rayonnement ou sensible à une lumière active à l'aide d'une composition de résine sensible à un rayonnement ou sensible à une lumière active ; (b) une étape consistant à exposer à une lumière le film sensible à un rayonnement ou sensible à une lumière active ; (c) une étape consistant à former un motif négatif comportant une partie de film restante et une partie d'espace par développement du film exposé sensible à un rayonnement ou sensible à une lumière active au moyen d'un liquide révélateur contenant un solvant organique ; (d) une étape consistant à remplir la partie d'espace à l'aide d'une composition pour une inversion d'image par application de la composition pour une inversion d'image sur le motif négatif ; et (e) une étape consistant à obtenir un motif inverse par retrait de la partie de film restante du motif négatif par gravure. La composition pour une inversion d'image contient une résine et le rapport de teneur totale en atomes de silicium et en atomes métalliques dans cette résine varie entre 0 et 20 % en masse.
PCT/JP2016/065784 2015-05-29 2016-05-27 Procédé permettant de former un motif inverse, composition pour une inversion d'image et procédé permettant de fabriquer un dispositif électronique WO2016194838A1 (fr)

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KR20220034157A (ko) * 2019-08-29 2022-03-17 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및, 전자 디바이스의 제조 방법

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JP2014106298A (ja) * 2012-11-26 2014-06-09 Fujifilm Corp パターン形成方法、それにより形成されたレジストパターン、並びに、これらを用いる電子デバイスの製造方法、及び電子デバイス
JP2014157299A (ja) * 2013-02-18 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法及びパターン反転膜材料
JP2014157246A (ja) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法
JP2014157301A (ja) * 2013-02-18 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法
JP2015125387A (ja) * 2013-12-27 2015-07-06 東京応化工業株式会社 パターン形成方法

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JP2014106298A (ja) * 2012-11-26 2014-06-09 Fujifilm Corp パターン形成方法、それにより形成されたレジストパターン、並びに、これらを用いる電子デバイスの製造方法、及び電子デバイス
JP2014157246A (ja) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法
JP2014157299A (ja) * 2013-02-18 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法及びパターン反転膜材料
JP2014157301A (ja) * 2013-02-18 2014-08-28 Shin Etsu Chem Co Ltd パターン形成方法
JP2015125387A (ja) * 2013-12-27 2015-07-06 東京応化工業株式会社 パターン形成方法

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