WO2016176892A1 - Oled背板结构 - Google Patents

Oled背板结构 Download PDF

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WO2016176892A1
WO2016176892A1 PCT/CN2015/081719 CN2015081719W WO2016176892A1 WO 2016176892 A1 WO2016176892 A1 WO 2016176892A1 CN 2015081719 W CN2015081719 W CN 2015081719W WO 2016176892 A1 WO2016176892 A1 WO 2016176892A1
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layer
electrode
auxiliary conductive
disposed
insulating layer
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French (fr)
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李文辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/771,203 priority Critical patent/US9601558B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED backplane structure.
  • OLED is an Organic Light-Emitting Diode, which has the characteristics of self-illumination, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, etc., and has received extensive attention as a new generation display mode. It has gradually replaced traditional LCD monitors and is widely used in mobile phone screens, computer monitors, and full-color TVs. OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light.
  • FIG. 1 is a schematic cross-sectional view of a conventional OLED backplane structure, including a substrate 100, a TFT layer 700 disposed on the substrate 100, and a first insulating layer 710 disposed on the TFT layer 700.
  • a first via hole 3110 is disposed on the pixel defining layer 830 corresponding to the first electrode 810, and a second pass is disposed on the first insulating layer 710 and the second insulating layer 720 corresponding to the TFT layer 700. Hole 3150.
  • the light emitting layer 900 is in contact with the first electrode 810 via the first via 3110, and the first electrode 810 is in contact with the TFT layer 700 via the second via 3150.
  • the first electrode 810 functions as a pixel electrode, that is, an anode of the OLED
  • the second electrode 820 functions as a cathode of the OLED
  • the thickness of the second electrode 820 is generally thin; especially in a top emission type.
  • a transparent cathode is required, so a thinner second electrode 820 is required.
  • the resistance is large, especially in a large-sized display, which may cause an in-plane voltage. Unevenness affects the uniformity of the display, causing problems such as uneven brightness (mura).
  • the object of the present invention is to provide an OLED back plate structure, the cathode has a small electrical resistance and is electrically conductive.
  • the ability is strong, the surface voltage is uniform, the uniformity of the OLED display can be improved, the cathode is thin, the light transmittance is good, and the production cost is low.
  • the present invention provides an OLED backplane structure, including a substrate, a TFT layer disposed on the substrate, a first insulating layer disposed on the TFT layer, and disposed on the first insulating layer. a second insulating layer, a first electrode disposed on the second insulating layer, a pixel defining layer disposed on the first electrode and the second insulating layer, disposed on the pixel defining layer and the first electrode a light-emitting layer, a photoresist spacer disposed on the pixel defining layer, and a second electrode disposed on the pixel defining layer, the photoresist spacer, and the light-emitting layer;
  • a plurality of auxiliary conductive layers spaced apart from the first electrode are disposed under the second electrode, and the second electrode is in contact with the auxiliary conductive layer.
  • a first via hole is disposed on the pixel defining layer corresponding to the first electrode, and a second via hole is disposed on the first insulating layer and the second insulating layer corresponding to the TFT layer; the light emitting layer Contacting the first electrode via the first via, the first electrode contacting the TFT layer via the second via;
  • the first electrode serves as a pixel electrode, ie, an anode of an OLED
  • the second electrode serves as a cathode of an OLED
  • An auxiliary conductive layer is disposed on the second insulating layer, and a third via is disposed on the pixel defining layer corresponding to the auxiliary conductive layer, and the second electrode and the auxiliary conductive via the third via The layers are in contact.
  • the auxiliary conductive layer is prepared by using the same photomask as the first electrode.
  • An auxiliary conductive layer is disposed on the first insulating layer, and a third via hole is disposed on the pixel defining layer and the second insulating layer corresponding to the auxiliary conductive layer, and the second electrode passes through the third via The holes are in contact with the auxiliary conductive layer.
  • the auxiliary conductive layer is fabricated separately or simultaneously with other conductive electrodes.
  • a first auxiliary conductive layer is disposed on the first insulating layer, a second auxiliary conductive layer is disposed on the second insulating layer, and a third pass is disposed on the pixel defining layer corresponding to the second auxiliary conductive layer.
  • a second via hole is disposed on the second insulating layer corresponding to the first auxiliary conductive layer; the second auxiliary conductive layer is in contact with the first auxiliary conductive layer via the fourth via hole, The second electrode is in contact with the second auxiliary conductive layer via the third via.
  • the material of the auxiliary conductive layer is ITO.
  • the auxiliary conductive layers are distributed in a continuous grid or are composed of a plurality of auxiliary conductive blocks arranged at intervals.
  • the layers of the auxiliary conductive layers are arranged in the same or different manner.
  • the present invention also provides an OLED backplane structure, including a substrate, and a TFT disposed on the substrate a first insulating layer disposed on the TFT layer, a second insulating layer disposed on the first insulating layer, and a first electrode disposed on the second insulating layer, disposed on the first a pixel defining layer on the electrode and the second insulating layer, a light emitting layer disposed on the pixel defining layer and the first electrode, and a photoresist spacer disposed on the pixel defining layer, disposed on the pixel defining layer, a photoresist spacer and a second electrode on the light emitting layer;
  • auxiliary conductive layers spaced apart from the first electrode are disposed under the second electrode, and the second electrode is in contact with the auxiliary conductive layer;
  • a first via hole is disposed on the pixel defining layer corresponding to the first electrode, and a second via hole is disposed on the first insulating layer and the second insulating layer corresponding to the TFT layer;
  • the light emitting layer is in contact with the first electrode via the first via, and the first electrode is in contact with the TFT layer via the second via;
  • the first electrode serves as a pixel electrode, that is, an anode of an OLED, and the second electrode serves as a cathode of the OLED;
  • An auxiliary conductive layer is disposed on the second insulating layer, and a third via is disposed on the pixel defining layer corresponding to the auxiliary conductive layer, and the second electrode is connected to the second via
  • the auxiliary conductive layers are in contact;
  • the auxiliary conductive layer and the first electrode are prepared by using the same photomask.
  • the invention has the beneficial effects that the OLED back plate structure of the invention has several layers of auxiliary conductive layers in contact with the cathode under the cathode of the OLED, thereby reducing the resistance of the cathode and enhancing the conductivity of the cathode, so that the in-plane
  • the voltage is uniform, the uniformity of the OLED display is improved, the uneven brightness of the display is avoided, the thickness of the cathode can be reduced, and the production cost is saved.
  • FIG. 1 is a schematic cross-sectional view showing a structure of a conventional OLED backplane
  • FIG. 2 is a cross-sectional view showing a first embodiment of an OLED backplane structure of the present invention
  • FIG. 3 is a cross-sectional view showing a second embodiment of the OLED backplane structure of the present invention.
  • FIG. 4 is a cross-sectional view showing a third embodiment of the OLED backplane structure of the present invention.
  • FIG. 5 is a top view of a distribution pattern of an auxiliary conductive layer of the OLED backplane structure of the present invention. schematic diagram;
  • FIG. 6 is a top plan view showing another distribution mode of the auxiliary conductive layer of the OLED backplane structure of the present invention.
  • the present invention provides an OLED backplane structure, including a substrate 1 , a TFT layer 70 disposed on the substrate 1 , and a first insulating layer 71 disposed on the TFT layer. a second insulating layer 72 on the first insulating layer 71, a first electrode 81 disposed on the second insulating layer 72, and a pixel definition provided on the first electrode 81 and the second insulating layer 72 a layer 83, a light-emitting layer 90 disposed on the pixel defining layer 83 and the first electrode 81, a photoresist spacer 84 disposed on the pixel defining layer 83, and the pixel defining layer 83 and the photoresist gap The object 84 and the second electrode 82 on the light-emitting layer 90.
  • a plurality of auxiliary conductive layers spaced apart from the first electrode 81 are disposed under the second electrode 82, and the second electrode 82 is in contact with the auxiliary conductive layer.
  • a first via 311 is disposed on the pixel defining layer 83 corresponding to the first electrode 81, and the first insulating layer 71 and the second insulating layer 72 are disposed above the TFT layer 70.
  • the second via 315 is disposed on the pixel defining layer 83 corresponding to the first electrode 81, and the first insulating layer 71 and the second insulating layer 72 are disposed above the TFT layer 70.
  • the second via 315 is disposed on the pixel defining layer 83 corresponding to the first electrode 81, and the first insulating layer 71 and the second insulating layer 72 are disposed above the TFT layer 70.
  • the light emitting layer 90 is in contact with the first electrode 81 via the first via 311, and the first electrode 81 is in contact with the TFT layer 70 via the second via 315.
  • the first electrode 81 serves as a pixel electrode, that is, an anode of an OLED
  • the second electrode 82 serves as a cathode of the OLED.
  • the material of the first electrode 81 is ITO (Indium Tin Oxide).
  • FIG. 2 is a cross-sectional view showing a first embodiment of an OLED backplane structure according to the present invention.
  • An auxiliary conductive layer 85 is disposed on the second insulating layer 72.
  • a third via 316 is disposed on the pixel defining layer 83 corresponding to the auxiliary conductive layer 85, and the second electrode 82 passes through the third through The hole 316 is in contact with the auxiliary conductive layer 85.
  • the auxiliary conductive layer 85 may be prepared by using the same photomask as the first electrode 81.
  • the material of the auxiliary conductive layer 85 may be ITO or other conductive material.
  • FIG. 3 is a cross-sectional view showing a second embodiment of the OLED backplane structure of the present invention.
  • An auxiliary conductive layer 85 ′ is disposed on the first insulating layer 71
  • a third via 316 ′ is disposed on the pixel defining layer 83 and the second insulating layer 72 corresponding to the auxiliary conductive layer 85 ′.
  • Second electric The pole 82 is in contact with the auxiliary conductive layer 85' via the third via 316'.
  • the auxiliary conductive layer 85' may be fabricated separately or may be fabricated simultaneously with other conductive electrodes such as source/drain electrodes of the TFT layer 70.
  • the material of the auxiliary conductive layer 85' may be ITO or other conductive material.
  • FIG. 4 is a cross-sectional view showing a third embodiment of the OLED backplane structure of the present invention.
  • a first auxiliary conductive layer 851 is disposed on the first insulating layer 71, and a second auxiliary conductive layer 852 is disposed on the second insulating layer 72.
  • the pixel defining layer 83 corresponds to the second auxiliary conductive layer 852.
  • a third via 316 ′ is disposed on the second insulating layer 72
  • a fourth via 317 is disposed on the second insulating layer 72 .
  • the second auxiliary conductive layer 852 passes through the fourth via
  • the hole 317 is in contact with the first auxiliary conductive layer 851, and the second electrode 82 is in contact with the second auxiliary conductive layer 852 via the third via 316".
  • the material of the first auxiliary conductive layer 851 and the second auxiliary conductive layer 852 may be ITO or other conductive materials.
  • the auxiliary conductive layers may be continuously distributed, distributed in a continuous grid shape as shown in FIG. 5, or continuously distributed in other shapes;
  • the layers may also be discontinuously distributed, as shown in Figure 6, the auxiliary conductive layer being composed of a plurality of spaced apart auxiliary conductive blocks.
  • the arrangement of the auxiliary conductive layers of the respective layers may be the same or different.
  • the OLED backplane structure of the present invention has a plurality of auxiliary conductive layers in contact with the cathode under the cathode of the OLED, thereby reducing the resistance of the cathode, enhancing the conductivity of the cathode, and making the in-plane voltage Uniformity improves the uniformity of the OLED display, avoids problems such as uneven display brightness, and can reduce the thickness of the cathode and save production costs.

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Abstract

一种OLED背板结构，在OLED的阴极下方设有与阴极相接触的数层辅助导电层（85），可减小阴极的电阻，增强阴极的导电能力，使面内电压均匀，改善OLED显示的均一性，避免显示亮度不均等问题，并可以减小阴极的厚度，节省生产成本。

Description

OLED背板结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED背板结构。
背景技术
OLED即有机发光二极管(Organic Light-Emitting Diode)，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统液晶显示器，被广泛应用在手机屏幕、电脑显示器、全彩电视等。OLED显示技术与传统的液晶显示技术不同，无需背光灯，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。
请参阅图1，为一种现有的OLED背板结构的剖面示意图，包括基板100、设于基板100上的TFT层700、设于所述TFT层700上的第一绝缘层710、设于所述第一绝缘层710上的第二绝缘层720、设于所述第二绝缘层720上的第一电极810、设于所述第一电极810与第二绝缘层720上的像素定义层830、设于所述像素定义层830与第一电极810上的发光层900、设于所述像素定义层830上的光阻间隙物840、设于所述像素定义层830、光阻间隙物840、及发光层900上的第二电极820。
所述像素定义层830上对应所述第一电极810上方设有第一过孔3110，所述第一绝缘层710、及第二绝缘层720上对应所述TFT层700上方设有第二过孔3150。所述发光层900经由所述第一过孔3110与所述第一电极810相接触，所述第一电极810经由所述第二过孔3150与所述TFT层700相接触。
在上述OLED背板结构中，所述第一电极810作为像素电极即OLED的阳极，第二电极820作为OLED的阴极，且所述第二电极820的厚度一般较薄；尤其是在顶发光型OLED背板结构中，需制作透明阴极，因此需要更薄的第二电极820，然而在第二电极820较薄的情况下，电阻较大，尤其在大尺寸显示器中，有可能造成面内电压不均，影响显示的均一性，造成亮度不均(mura)等问题。
发明内容
本发明的目的在于提供一种OLED背板结构，阴极的电阻较小，导电 能力强，面内电压均匀，可改善OLED显示的均一性，且阴极较薄，透光性较好，生产成本低。
为实现上述目的，本发明提供一种OLED背板结构，包括基板、设于所述基板上的TFT层、设于所述TFT层上的第一绝缘层、设于所述第一绝缘层上的第二绝缘层、设于所述第二绝缘层上的第一电极、设于所述第一电极与第二绝缘层上的像素定义层、设于所述像素定义层与第一电极上的发光层、设于所述像素定义层上的光阻间隙物、设于所述像素定义层、光阻间隙物、及发光层上的第二电极；
所述第二电极下方设有与所述第一电极相间隔的数层辅助导电层，所述第二电极与所述辅助导电层相接触。
所述像素定义层上对应所述第一电极上方设有第一过孔，所述第一绝缘层、及第二绝缘层上对应所述TFT层上方设有第二过孔；所述发光层经由所述第一过孔与所述第一电极相接触，所述第一电极经由所述第二过孔与所述TFT层相接触；
所述第一电极作为像素电极即OLED的阳极，所述第二电极作为OLED的阴极。
所述第二绝缘层上设有辅助导电层，所述像素定义层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触。
所述辅助导电层与所述第一电极采用同一道光罩制备。
所述第一绝缘层上设有辅助导电层，所述像素定义层、及第二绝缘层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触。
所述辅助导电层单独制作或与其他导电电极同时制作。
所述第一绝缘层上设有第一辅助导电层，所述第二绝缘层上设有第二辅助导电层，所述像素定义层上对应所述第二辅助导电层上方设有第三过孔，所述第二绝缘层上对应所述第一辅助导电层上方设有第四过孔；所述第二辅助导电层经由所述第四过孔与所述第一辅助导电层相接触，所述第二电极经由所述第三过孔与所述第二辅助导电层相接触。
所述辅助导电层的材料为ITO。
所述辅助导电层呈连续网格状分布，或者由数个间隔设置的辅助导电块组成。
各层辅助导电层的排布方式相同或不同。
本发明还提供一种OLED背板结构，包括基板、设于所述基板上的TFT 层、设于所述TFT层上的第一绝缘层、设于所述第一绝缘层上的第二绝缘层、设于所述第二绝缘层上的第一电极、设于所述第一电极与第二绝缘层上的像素定义层、设于所述像素定义层与第一电极上的发光层、设于所述像素定义层上的光阻间隙物、设于所述像素定义层、光阻间隙物、及发光层上的第二电极；
所述第二电极下方设有与所述第一电极相间隔的数层辅助导电层，所述第二电极与所述辅助导电层相接触；
其中，所述像素定义层上对应所述第一电极上方设有第一过孔，所述第一绝缘层、及第二绝缘层上对应所述TFT层上方设有第二过孔；所述发光层经由所述第一过孔与所述第一电极相接触，所述第一电极经由所述第二过孔与所述TFT层相接触；
所述第一电极作为像素电极即OLED的阳极，所述第二电极作为OLED的阴极；
其中，所述第二绝缘层上设有辅助导电层，所述像素定义层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触；
其中，所述辅助导电层与所述第一电极采用同一道光罩制备。
本发明的有益效果：本发明的OLED背板结构，在OLED的阴极下方设有与阴极相接触的数层辅助导电层，从而减小了阴极的电阻，增强了阴极的导电能力，使面内电压均匀，改善了OLED显示的均一性，避免了显示亮度不均等问题，并可以减小阴极的厚度，节省生产成本。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的OLED背板结构的剖面示意图；
图2为本发明的OLED背板结构的第一实施例的剖面示意图；
图3为本发明的OLED背板结构的第二实施例的剖面示意图；
图4为本发明的OLED背板结构的第三实施例的剖面示意图；
图5为本发明的OLED背板结构的辅助导电层的一种分布方式的俯视 示意图；
图6为本发明的OLED背板结构的辅助导电层的另一种分布方式的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图2至图4，本发明提供一种OLED背板结构，包括基板1、设于所述基板1上的TFT层70、设于所述TFT层上的第一绝缘层71、设于所述第一绝缘层71上的第二绝缘层72、设于所述第二绝缘层72上的第一电极81、设于所述第一电极81与第二绝缘层72上的像素定义层83、设于所述像素定义层83与第一电极81上的发光层90、设于所述像素定义层83上的光阻间隙物84、设于所述像素定义层83、光阻间隙物84、及发光层90上的第二电极82。
所述第二电极82下方设有与所述第一电极81相间隔的数层辅助导电层，所述第二电极82与所述辅助导电层相接触。
具体地，所述像素定义层83上对应所述第一电极81上方设有第一过孔311，所述第一绝缘层71、及第二绝缘层72上对应所述TFT层70上方设有第二过孔315。
所述发光层90经由所述第一过孔311与所述第一电极81相接触，所述第一电极81经由所述第二过孔315与所述TFT层70相接触。
其中，所述第一电极81作为像素电极即OLED的阳极，所述第二电极82作为OLED的阴极。
具体地，所述第一电极81的材料为ITO(氧化铟锡)。
请参阅图2，为本发明OLED背板结构第一实施例的剖面示意图。所述第二绝缘层72上设有辅助导电层85，所述像素定义层83上对应所述辅助导电层85上方设有第三过孔316，所述第二电极82经由所述第三过孔316与所述辅助导电层85相接触。
具体地，所述辅助导电层85可以与所述第一电极81采用同一道光罩制备。
具体地，所述辅助导电层85的材料可以是ITO或其他导电材料。
请参阅图3，为本发明OLED背板结构第二实施例的剖面示意图。所述第一绝缘层71上设有辅助导电层85’，所述像素定义层83、及第二绝缘层72上对应所述辅助导电层85’上方设有第三过孔316’，所述第二电 极82经由所述第三过孔316’与所述辅助导电层85’相接触。
具体地，所述辅助导电层85’可以单独制作，也可以与其他导电电极如TFT层70的源/漏电极同时制作。
具体地，所述辅助导电层85’的材料可以是ITO或其他导电材料。
请参阅图4，为本发明OLED背板结构第三实施例的剖面示意图。所述第一绝缘层71上设有第一辅助导电层851，所述第二绝缘层72上设有第二辅助导电层852，所述像素定义层83上对应所述第二辅助导电层852上方设有第三过孔316”，所述第二绝缘层72上对应所述第一辅助导电层851上方设有第四过孔317；所述第二辅助导电层852经由所述第四过孔317与所述第一辅助导电层851相接触，所述第二电极82经由所述第三过孔316”与所述第二辅助导电层852相接触。
具体地，所述第一辅助导电层851、及第二辅助导电层852的材料可以是ITO或其他导电材料。
值得一提的是，在上述第一至第三实施例中，所述辅助导电层可以呈连续分布，如图5所示呈连续网格状分布，或者以其他形状连续分布；所述辅助导电层也可以呈非连续分布，如图6所示，所述辅助导电层由数个间隔设置的辅助导电块组成。在上述第三实施例中，各层辅助导电层的排布方式可以相同，也可以不同。
综上所述，本发明的OLED背板结构，在OLED的阴极下方设有与阴极相接触的数层辅助导电层，从而减小了阴极的电阻，增强了阴极的导电能力，使面内电压均匀，改善了OLED显示的均一性，避免了显示亮度不均等问题，并可以减小阴极的厚度，节省生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED背板结构，包括基板、设于所述基板上的TFT层、设于所述TFT层上的第一绝缘层、设于所述第一绝缘层上的第二绝缘层、设于所述第二绝缘层上的第一电极、设于所述第一电极与第二绝缘层上的像素定义层、设于所述像素定义层与第一电极上的发光层、设于所述像素定义层上的光阻间隙物、设于所述像素定义层、光阻间隙物、及发光层上的第二电极；
    所述第二电极下方设有与所述第一电极相间隔的数层辅助导电层，所述第二电极与所述辅助导电层相接触。
  2. 如权利要求1所述的OLED背板结构，其中，所述像素定义层上对应所述第一电极上方设有第一过孔，所述第一绝缘层、及第二绝缘层上对应所述TFT层上方设有第二过孔；所述发光层经由所述第一过孔与所述第一电极相接触，所述第一电极经由所述第二过孔与所述TFT层相接触；
    所述第一电极作为像素电极即OLED的阳极，所述第二电极作为OLED的阴极。
  3. 如权利要求1所述的OLED背板结构，其中，所述第二绝缘层上设有辅助导电层，所述像素定义层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触。
  4. 如权利要求3所述的OLED背板结构，其中，所述辅助导电层与所述第一电极采用同一道光罩制备。
  5. 如权利要求1所述的OLED背板结构，其中，所述第一绝缘层上设有辅助导电层，所述像素定义层、及第二绝缘层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触。
  6. 如权利要求5所述的OLED背板结构，其中，所述辅助导电层单独制作或与其他导电电极同时制作。
  7. 如权利要求1所述的OLED背板结构，其中，所述第一绝缘层上设有第一辅助导电层，所述第二绝缘层上设有第二辅助导电层，所述像素定义层上对应所述第二辅助导电层上方设有第三过孔，所述第二绝缘层上对应所述第一辅助导电层上方设有第四过孔；所述第二辅助导电层经由所述第四过孔与所述第一辅助导电层相接触，所述第二电极经由所述第三过孔与所述第二辅助导电层相接触。
  8. 如权利要求1所述的OLED背板结构，其中，所述辅助导电层的材料为ITO。
  9. 如权利要求1所述的OLED背板结构，其中，所述辅助导电层呈连续网格状分布，或者由数个间隔设置的辅助导电块组成。
  10. 如权利要求1所述的OLED背板结构，其中，各层辅助导电层的排布方式相同或不同。
  11. 一种OLED背板结构，包括基板、设于所述基板上的TFT层、设于所述TFT层上的第一绝缘层、设于所述第一绝缘层上的第二绝缘层、设于所述第二绝缘层上的第一电极、设于所述第一电极与第二绝缘层上的像素定义层、设于所述像素定义层与第一电极上的发光层、设于所述像素定义层上的光阻间隙物、设于所述像素定义层、光阻间隙物、及发光层上的第二电极；
    所述第二电极下方设有与所述第一电极相间隔的数层辅助导电层，所述第二电极与所述辅助导电层相接触；
    其中，所述像素定义层上对应所述第一电极上方设有第一过孔，所述第一绝缘层、及第二绝缘层上对应所述TFT层上方设有第二过孔；所述发光层经由所述第一过孔与所述第一电极相接触，所述第一电极经由所述第二过孔与所述TFT层相接触；
    所述第一电极作为像素电极即OLED的阳极，所述第二电极作为OLED的阴极；
    其中，所述第二绝缘层上设有辅助导电层，所述像素定义层上对应所述辅助导电层上方设有第三过孔，所述第二电极经由所述第三过孔与所述辅助导电层相接触；
    其中，所述辅助导电层与所述第一电极采用同一道光罩制备。
  12. 如权利要求11所述的OLED背板结构，其中，所述辅助导电层的材料为ITO。
  13. 如权利要求11所述的OLED背板结构，其中，所述辅助导电层呈连续网格状分布，或者由数个间隔设置的辅助导电块组成。
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