WO2016169362A1 - 一种硅片台曝光区域六自由度位移测量方法 - Google Patents

一种硅片台曝光区域六自由度位移测量方法 Download PDF

Info

Publication number
WO2016169362A1
WO2016169362A1 PCT/CN2016/076395 CN2016076395W WO2016169362A1 WO 2016169362 A1 WO2016169362 A1 WO 2016169362A1 CN 2016076395 W CN2016076395 W CN 2016076395W WO 2016169362 A1 WO2016169362 A1 WO 2016169362A1
Authority
WO
WIPO (PCT)
Prior art keywords
degree
area
exposure region
measurement
freedom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/076395
Other languages
English (en)
French (fr)
Inventor
朱煜
张鸣
陈安林
成荣
杨开明
刘峰
宋玉晶
支凡
胡金春
徐登峰
穆海华
胡楚雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Beijing U Precision Tech Co Ltd
Original Assignee
Tsinghua University
Beijing U Precision Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University, Beijing U Precision Tech Co Ltd filed Critical Tsinghua University
Priority to US15/568,118 priority Critical patent/US9995569B2/en
Publication of WO2016169362A1 publication Critical patent/WO2016169362A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/36—Forming the light into pulses
    • G01D5/38—Forming the light into pulses by diffraction gratings

Definitions

  • the invention relates to a six-degree-of-freedom displacement measuring method for an exposure area of a silicon wafer stage.
  • the six-degree-of-freedom displacement measuring method of the silicon wafer stage exposure area is applied to a semiconductor lithography machine, and belongs to the technical field of semiconductor manufacturing equipment.
  • the silicon wafer is divided into a plurality of fields of view and exposed separately.
  • the exposed image is projected through the lens onto the silicon wafer to form an exposed area.
  • the wafer stage needs to be leveled and adjusted to adjust the horizontal position to ensure the relative position and angle between the exposed area and the lens, so the six-degree-of-freedom displacement measurement of the exposed area is especially important.
  • the wafer stage moves, causing the next field of view to move to the exposed area.
  • the position of the exposed area on the wafer is constantly changing throughout the exposure process.
  • the existing laser interferometer measurement method or plane grating measurement method mostly ignores the flexibility of the motion table, and regards it as a rigid body.
  • the six-degree-of-freedom displacement of the exposure area is solved, and the motion table is The error is large when the stiffness is low.
  • the prior art enables an integrated readhead to measure six degrees of freedom of the motion stage, but the readhead of the existing planar grating measurement system is placed on the motion stage. During the movement of the wafer stage, the measurement is fixed on the motion stage. The displacement of the point does not measure the six-degree-of-freedom displacement of the exposed area at all times.
  • there are measurement methods to measure the displacement of other positions on the motion stage and consider the flexible mode of the motion stage to solve the real-time solution to the exposure area. However, this method has low calculation accuracy and complicated algorithm.
  • the object of the present invention is to provide a six-degree-of-freedom displacement measurement method for an exposure area of a silicon wafer stage, which realizes measurement of a six-degree-of-freedom displacement of an exposure area at any time during the movement of the wafer stage motion table.
  • the measuring beam of the reading head is incident on the plane grating to form a measuring area, and the center B of the measuring area and the center A of the exposed area are on the same vertical line;
  • the six-degree-of-freedom pose (p x , p y , p z , ⁇ x , ⁇ y , ⁇ z ) of the measurement area is obtained by using the readhead and the plane grating, where (p x , p y ) , p z ) is the coordinate of the B point of the measurement area center, ⁇ x , ⁇ y , ⁇ z is the angle between the normal line of the plane of the measurement area along the positive Z direction and the coordinate axes X, Y and Z;
  • the invention Compared with the prior art solution, the invention has the following advantages and outstanding technical effects: the technical solution of the invention realizes the six-degree-of-freedom displacement measurement of the exposed area at any time during the movement of the silicon wafer table by the ingenious measurement scheme, which greatly Reduce measurement complexity and improve measurement accuracy, especially when the motion table is flexible, it can accurately measure the six-degree-of-freedom displacement of the exposed area at any time.
  • FIG. 1 is a schematic view showing an embodiment of a six-degree-of-freedom displacement measuring method for an exposed area of a wafer stage according to the present invention.
  • Fig. 2 is a schematic view of a measuring device in the embodiment.
  • Figure 3 is a schematic diagram of the pose calculation in the embodiment.
  • the silicon wafer stage includes a coil array 4 and a moving stage 3, and the coil array 4 is composed of coils arranged in a plane, this embodiment Square coils are used.
  • 2 is a schematic view of a measuring device in an embodiment, the moving table 3 includes a magnetic steel array 8 and a backing plate 7, the magnetic steel array 8 is bonded under the backing plate 7, and the magnetic steel array 8 is a two-dimensional permanent magnet array. In the example, a two-dimensional whatsoeverach permanent magnet array is used.
  • a plane grating 9 is fixed under the magnetic steel array 8, and the measuring surface faces the coil array 4.
  • the read head 5 is fixed in the gap of the coil array 4.
  • the gap may be a gap in the middle of the coil or a gap formed by the coil.
  • the middle reading head 5 is fixed in the gap of the coil.
  • the center line of the readhead 5 coincides with the center line of the lens 1, and the exposure beam 2 of the lens 1 is projected onto the motion stage 3 to form the exposure area 10.
  • the measuring beam 6 of the readhead 5 is incident on the planar grating 9 to form a measuring area 11, and the measuring area 11 and the exposed area 10 may be circular, square or rectangular, etc., which is represented by a square in this embodiment, and the exposed area 10
  • the center A and the center B of the measurement area 11 are on the same vertical line.
  • Figure 3 is a schematic diagram of the pose calculation in the embodiment.
  • the figure shows the portion of the motion stage covered by the exposure area 10.
  • the stationary coordinate system O-XYZ is fixed on the coil array 4, and the position vector of the origin O to the center B of the measurement area 11 is The position vector of the origin O to the center A of the exposure area 10 is The vector from point B to point A is
  • the six-degree-of-freedom pose of the measurement region 11 is obtained by using the read head 5 and the plane grating 9 as (p x , p y , p z , ⁇ x , ⁇ y , ⁇ z ), where (p x , p y , p z ) It is the coordinate of the center B point of the measurement area 11, and ⁇ x , ⁇ y , ⁇ z are the normal angles of the plane of the measurement area 11 along the positive direction of Z, and the coordinate axes X, Y and Z respectively.
  • p x ', p y ', p z ' represents the position of the center A point of the exposure region 10.
  • the portion of the moving stage covered by the exposed area 10 can be approximated as a rigid body.
  • the normal of the plane of the exposed area 10 along the positive direction of Z is respectively The angles formed by the coordinate axes X, Y, and Z ( ⁇ x ', ⁇ y ', ⁇ z ') and the normal of the plane of the measurement area 11 along the positive Z direction are respectively sandwiched by the coordinate axes X, Y, and Z.
  • the six-degree-of-freedom pose of the exposed area 10 is calculated from the six-degree-of-freedom pose of the measurement area 11, that is,
  • p x ',p y ',p z ' represents the position of the point A of the exposure area center
  • ⁇ x ', ⁇ y ', ⁇ z ' represents the normal of the plane of the exposure area along the positive Z direction and the coordinate axis X, respectively
  • the angle between Y and Z, (p x , p y , p z ) is the position of point B in the center of the measurement area
  • ⁇ x , ⁇ y , ⁇ z are the normals and coordinates of the plane along the positive direction of the measurement area
  • the angle formed by the axes X, Y and Z, and L is the distance between the two points A and B.
  • the six-degree-of-freedom pose of the exposure area is subtracted from the six-degree-of-freedom pose of the previous moment to obtain a six-degree-of-freedom displacement of the exposed area from the previous moment to the next moment.
  • the six-degree-of-freedom displacement signal of the exposed area obtained according to the present invention can be used for feedback control, controlling the leveling and horizontal movement of the exposed area; and can also be used for feedforward control to solve the current time by the obtained exposure area of six
  • the degree of freedom displacement error is compensated in advance to the next moment, and the leveling focus error and the horizontal motion error are reduced.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

一种硅片台曝光区域(10)六自由度位移测量方法，应用于硅片台曝光区域(10)的六自由度位移测量。硅片台包含线圈阵列(4)和运动台(3)，运动台(3)磁钢阵列(8)的下方固定平面光栅(9)，将读数头(5)固定在线圈阵列(4)的空隙中，读数头(5)中心线和透镜(1)的中心线重合；读数头(5)的测量光束(6)入射在平面光栅(9)上形成测量区域(11)，测量区域(11)的中心和曝光区域(2)的中心在同一竖直线上；将曝光区域(2)覆盖的那部分运动台近似为刚体，当运动台(3)运动或由于振动发生变形时，由读数头(5)测量得到测量区域的六自由度位移解算得到曝光区域(2)的六自由度位移。该方法实现了硅片台运动过程中任意时刻曝光区域(2)的六自由度位移测量，降低测量复杂性，提高测量精度，尤其在运动台(3)柔性较大时仍能精确测量任意时刻曝光区域(2)的六自由度位移。

Description

一种硅片台曝光区域六自由度位移测量方法 技术领域
本发明涉及一种硅片台曝光区域六自由度位移测量方法，该硅片台曝光区域六自由度位移测量方法应用于半导体光刻机中，属于半导体制造装备技术领域。
背景技术
光刻机在曝光过程中，硅片分为多个视场，分别进行曝光。在进行硅片上一个视场的曝光过程中，曝光图像通过透镜投影到硅片上形成曝光区域。为保证曝光精度，硅片台需要进行调平调焦和调整水平位置，保证曝光区域和透镜之间的相对位置和角度，所以曝光区域的六自由度位移测量尤其重要。当这一视场曝光完成后，硅片台运动，使下一视场运动到曝光区域。在整个曝光过程中，曝光区域在硅片上的位置不断变化。
现有的激光干涉仪测量方式或者平面光栅测量方式，大多忽略运动台的柔性，将其看做刚体，通过测量运动台其他位置的位移，解算至曝光区域的六自由度位移，在运动台刚度较低时误差较大。现有技术可实现一个集成的读数头测量运动台六个自由度，但是现有平面光栅测量系统的读数头多放置于运动台上，在硅片台运动过程中，测量的是运动台上固定点的位移，不能测量时刻变化着的曝光区域的六自由度位移。另外有测量方法通过测量运动台其他位置的位移，并考虑运动台的柔性模态，实时解算到曝光区域上，但此种方法解算精度低，算法复杂。
发明内容
本发明的目的在于提供一种硅片台曝光区域六自由度位移测量方法，实现硅片台运动台运动过程中任意时刻曝光区域六自由度位移的测量。
本发明的技术方案如下：
一种硅片台曝光区域六自由度位移测量方法，所述曝光区域为曝光光束投影到运动台上形成的区域，其特征在于所述方法包括如下步骤：
1)在运动台的磁钢阵列的下方固定平面光栅，平面光栅的测量面朝向线圈阵列，将读数头固定在线圈阵列的空隙中，读数头中心线和透镜的中心线重合；
2)读数头的测量光束入射在平面光栅上形成测量区域，测量区域的中心B和曝光区域的中心A在同一竖直线上；
3)在某一时刻，利用读数头和平面光栅测量得到测量区域的六自由度位姿(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域中心B点的坐标，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角；
4)将曝光区域覆盖的那部分运动台近似为刚体，根据测量区域的六自由度位姿，代入(px',py',pz',θx',θy',θz')＝(px+L cosθx,py+L cosθy,pz+L cosθz,θx,θy,θz)解算得到曝光区域的六自由度位姿，其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点的距离；
5)当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
本发明与现有技术方案相比，具有以下优点及突出性的技术效果：本发明的技术方案通过巧妙的测量方案实现了硅片台运动过程中任意时刻曝光区域的六自由度位移测量，大大降低测量复杂性，提高了测量精度，尤其在运动台柔性较大时仍能精确测量任意时刻曝光区域的六自由度位移。
附图说明
图1是本发明提供的硅片台曝光区域六自由度位移测量方法实施例示意图。
图2是实施例中测量装置示意图。
图3是实施例中位姿解算示意图。
图中：1-透镜，2-曝光光束，3-运动台，4-线圈阵列，5-读数头，6-测量光束，7-背板，8-磁钢阵列，9-平面光栅，10-曝光区域，11-测量区域。
具体实施方式
下面结合附图对本发明实施方式作进一步详细描述。
图1是本发明提供的硅片台曝光区域六自由度位移测量方法实施例示意图，硅片台包含线圈阵列4和运动台3，线圈阵列4由在平面内排布的线圈组成，本实施例中采用方形线圈。图2是实施例中测量装置示意图，运动台3包含磁钢阵列8和背板7，所述磁钢阵列8粘接在背板7下方，磁钢阵列8采用二维永磁阵列,本实施例中采用二维halbach型永磁阵列。磁钢阵列8的下方固定有平面光栅9，测量面朝向线圈阵列4，读数头5固定在线圈阵列4的空隙中，空隙可以是线圈中间的空隙或挖走线圈所形成的空隙，本实施例中读数头5固定在线圈的空隙中。读数头5的中心线和透镜1的中心线重合，透镜1的曝光光束2投影到运动台3上形成曝光区域10。如图2，读数头5的测量光束6入射在平面光栅9上形成测量区域11，测量区域11和曝光区域10可以是圆形、方形或矩形等，本实施例中用方形表示，曝光区域10的中心A和测量区域11的中心B在同一竖直线上。
图3是实施例中位姿解算示意图。图中所示为曝光区域10覆盖的那部分运动台,静止坐 标系O-XYZ固定在线圈阵列4上，原点O到测量区域11的中心B的位置向量为
Figure PCTCN2016076395-appb-000001
原点O到曝光区域10的中心A的位置向量为
Figure PCTCN2016076395-appb-000002
B点到A点的向量为
Figure PCTCN2016076395-appb-000003
利用读数头5和平面光栅9得到测量区域11的六自由度位姿为(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域11中心B点的坐标，θx,θy,θz是测量区域11所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，可参见Xinghui Li等在A six-degree-of-freedom surface encoder for precision positioning of a planar motion stage中提出的可以测量运动台六个自由度的读数头。设A、B两点距离为L，可得
Figure PCTCN2016076395-appb-000004
A点的位置向量
Figure PCTCN2016076395-appb-000005
可以用下式解算得到
Figure PCTCN2016076395-appb-000006
式中px',py',pz'代表曝光区域10中心A点的位置。
由于曝光区域10面积较小，可将曝光区域10覆盖的这部分运动台近似为刚体，当整个运动台3运动或由于振动发生变形时，曝光区域10所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角(θx',θy',θz')分别和测量区域11所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角相等，即(θx',θy',θz')＝(θx,θy,θz)。
这样就由测量区域11的六自由度位姿解算出曝光区域10的六自由度位姿，即
(px',py',pz',θx',θy',θz')＝(px+L cosθx,py+L cosθy,pz+L cosθz,θx,θy,θz)
其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，(px,py,pz)是测量区域中心B点的位置，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点距离。
当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
根据本发明解算得到的曝光区域的六自由度位移信号可用于反馈控制，控制曝光区域的调平调焦和水平运动；也可用于前馈控制，将当前时刻解算得到的曝光区域的六自由度位移误差提前补偿至下一时刻，减小调平调焦误差和水平运动误差。

Claims (1)

  1. 一种硅片台曝光区域六自由度位移测量方法，所述曝光区域(10)为曝光光束(2)投影到运动台(3)上形成的区域，其特征在于所述方法包括如下步骤：
    1)在运动台的磁钢阵列(8)的下方固定平面光栅(9)，平面光栅的测量面朝向线圈阵列(4)，将读数头(5)固定在线圈阵列的空隙中，读数头中心线和透镜(1)的中心线重合；
    2)读数头的测量光束(6)入射在平面光栅上形成测量区域(11)，测量区域的中心B和曝光区域(10)的中心A在同一竖直线上；
    3)在某一时刻，利用读数头和平面光栅测量得到测量区域的六自由度位姿(px,py,pz,θx,θy,θz)，其中(px,py,pz)是测量区域中心B点的坐标，θx,θy,θz是测量区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角；
    4)将曝光区域覆盖的那部分运动台近似为刚体，根据测量区域的六自由度位姿，代入(px',py',pz',θx',θy',θz')＝(px+L cosθx,py+L cosθy,pz+L cosθz,θx,θy,θz)解算得到曝光区域的六自由度位姿，其中px',py',pz'代表曝光区域中心A点的位置，θx',θy',θz'代表曝光区域所在平面沿Z正方向的法线分别与坐标轴X、Y和Z所成夹角，L是A、B两点的距离；
    5)当运动台运动到下一时刻，曝光区域的六自由度位姿减去上一时刻的六自由度位姿即得到曝光区域从上一时刻到下一时刻的六自由度位移。
PCT/CN2016/076395 2015-04-23 2016-03-15 一种硅片台曝光区域六自由度位移测量方法 Ceased WO2016169362A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/568,118 US9995569B2 (en) 2015-04-23 2016-03-15 Six-degree-of-freedom displacement measurement method for exposure region on silicon wafer stage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510197948.5 2015-04-23
CN201510197948.5A CN105045042B (zh) 2015-04-23 2015-04-23 一种硅片台曝光区域六自由度位移测量方法

Publications (1)

Publication Number Publication Date
WO2016169362A1 true WO2016169362A1 (zh) 2016-10-27

Family

ID=54451685

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/076395 Ceased WO2016169362A1 (zh) 2015-04-23 2016-03-15 一种硅片台曝光区域六自由度位移测量方法

Country Status (3)

Country Link
US (1) US9995569B2 (zh)
CN (1) CN105045042B (zh)
WO (1) WO2016169362A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109141225A (zh) * 2017-06-19 2019-01-04 河南科技大学 基于圆光栅的轴系五、六自由度误差测量方法及测量系统
CN118876633A (zh) * 2024-07-11 2024-11-01 哈尔滨工业大学 用于微纳阵列结构加工的超声压印装置及方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105045042B (zh) * 2015-04-23 2017-06-16 清华大学 一种硅片台曝光区域六自由度位移测量方法
CN106225685B (zh) * 2016-08-26 2018-11-30 清华大学 一种硅片台大行程三自由度位移测量系统
CN108508706B (zh) * 2017-02-28 2020-04-10 上海微电子装备（集团）股份有限公司 一种位移测量系统以及曝光设备
CN109405725B (zh) * 2018-09-30 2020-05-15 清华大学 一种基于磁场信息的平面二自由度位移测量方法
CN113758428B (zh) * 2021-09-27 2022-12-13 清华大学 光刻机掩模台六自由度位移测量系统
CN114279338B (zh) * 2021-12-24 2024-04-26 北京华卓精科科技股份有限公司 读数头安装工装及其集成方法、读数头安装方法
CN119164292B (zh) * 2024-10-09 2026-04-21 中国计量科学研究院 一种自溯源的二维位移测量装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6020964A (en) * 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
CN101482395A (zh) * 2009-02-10 2009-07-15 上海微电子装备有限公司 位置测量装置和位置测量方法
JP4756341B2 (ja) * 2005-11-25 2011-08-24 株式会社ニコン 位置検出装置及び露光装置
CN102221323A (zh) * 2011-06-03 2011-10-19 浙江大学 一种基于平面电容的六自由度位移测量方法
CN102721369A (zh) * 2012-06-01 2012-10-10 清华大学 一种利用激光干涉仪测量硅片台多自由度位移的装置
CN103019046A (zh) * 2012-12-19 2013-04-03 哈尔滨工业大学 一种基于多组独立驱动解耦控制的六自由度磁浮微动台
CN103105743A (zh) * 2013-02-06 2013-05-15 清华大学 带平面衍射光栅测量的具有六自由度粗动台的掩膜台系统
CN103454864A (zh) * 2013-08-30 2013-12-18 清华大学 一种粗精动一体的磁浮掩膜台系统
CN103543612A (zh) * 2013-09-25 2014-01-29 清华大学 一种带真空罩的动铁式无线缆六自由度磁浮运动平台
CN105045042A (zh) * 2015-04-23 2015-11-11 清华大学 一种硅片台曝光区域六自由度位移测量方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553679B2 (zh) * 1973-08-27 1980-01-26
US4506204A (en) * 1983-06-10 1985-03-19 The Perkin-Elmer Corporation Electro-magnetic apparatus
US5770864A (en) * 1996-12-31 1998-06-23 Pitney Bowes Inc. Apparatus and method for dimensional weighing utilizing a laser scanner or sensor
US7961909B2 (en) * 2006-03-08 2011-06-14 Electronic Scripting Products, Inc. Computer interface employing a manipulated object with absolute pose detection component and a display
JP4939765B2 (ja) * 2005-03-28 2012-05-30 株式会社日立製作所 変位計測方法とその装置
US7636165B2 (en) * 2006-03-21 2009-12-22 Asml Netherlands B.V. Displacement measurement systems lithographic apparatus and device manufacturing method
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
SG10201507256WA (en) * 2006-08-31 2015-10-29 Nikon Corp Movable Body Drive Method And Movable Body Drive System, Pattern Formation Method And Apparatus, Exposure Method And Apparatus, And Device Manufacturing Method
CN100507724C (zh) * 2007-06-29 2009-07-01 清华大学 一种6自由度微动工作台
KR101477833B1 (ko) * 2007-12-28 2014-12-30 가부시키가이샤 니콘 노광 장치, 이동체 구동 시스템, 패턴 형성 장치 및 노광 방법, 그리고 디바이스 제조 방법
ES2934103T3 (es) * 2011-01-31 2023-02-16 Global Filtration Systems Dba Gulf Filtration Systems Inc Aparato para fabricar objetos tridimensionales a partir de múltiples materiales solidificables
CN102661709B (zh) * 2012-04-23 2014-08-13 清华大学 一种大行程运动台位移测量方法
EP2672321B1 (en) * 2012-06-04 2015-03-18 MI-Partners BV Device for positioning a waferchuck
CN103066894B (zh) * 2012-12-12 2015-05-20 清华大学 一种六自由度磁悬浮工件台

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6020964A (en) * 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JP4756341B2 (ja) * 2005-11-25 2011-08-24 株式会社ニコン 位置検出装置及び露光装置
CN101482395A (zh) * 2009-02-10 2009-07-15 上海微电子装备有限公司 位置测量装置和位置测量方法
CN102221323A (zh) * 2011-06-03 2011-10-19 浙江大学 一种基于平面电容的六自由度位移测量方法
CN102721369A (zh) * 2012-06-01 2012-10-10 清华大学 一种利用激光干涉仪测量硅片台多自由度位移的装置
CN103019046A (zh) * 2012-12-19 2013-04-03 哈尔滨工业大学 一种基于多组独立驱动解耦控制的六自由度磁浮微动台
CN103105743A (zh) * 2013-02-06 2013-05-15 清华大学 带平面衍射光栅测量的具有六自由度粗动台的掩膜台系统
CN103454864A (zh) * 2013-08-30 2013-12-18 清华大学 一种粗精动一体的磁浮掩膜台系统
CN103543612A (zh) * 2013-09-25 2014-01-29 清华大学 一种带真空罩的动铁式无线缆六自由度磁浮运动平台
CN105045042A (zh) * 2015-04-23 2015-11-11 清华大学 一种硅片台曝光区域六自由度位移测量方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109141225A (zh) * 2017-06-19 2019-01-04 河南科技大学 基于圆光栅的轴系五、六自由度误差测量方法及测量系统
CN109141225B (zh) * 2017-06-19 2020-11-13 河南科技大学 基于圆光栅的轴系五、六自由度误差测量方法及测量系统
CN118876633A (zh) * 2024-07-11 2024-11-01 哈尔滨工业大学 用于微纳阵列结构加工的超声压印装置及方法

Also Published As

Publication number Publication date
CN105045042A (zh) 2015-11-11
CN105045042B (zh) 2017-06-16
US9995569B2 (en) 2018-06-12
US20180080757A1 (en) 2018-03-22

Similar Documents

Publication Publication Date Title
WO2016169362A1 (zh) 一种硅片台曝光区域六自由度位移测量方法
US10943807B2 (en) Method and device for alignment of substrates
TWI592764B (zh) 搬入方法、曝光方法、搬送系統及曝光裝置、以及元件製造方法
CN101334267B (zh) 数字影像测头矢量坐标变换标定与误差修正方法及其装置
US9207549B2 (en) Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
JP5260703B2 (ja) ３次元測定方法
CN107329379B (zh) 双层对准装置和双层对准方法
JP2015109459A5 (zh)
JP2015522950A (ja) 反射電子ビームリソグラフィのためのリニアステージ及び計測アーキテクチャ
TW201616214A (zh) 測試圖紙、採用該測試圖紙的攝像模組檢測方法及系統
WO2017167258A1 (zh) 一种投影曝光装置及方法
CN103389072A (zh) 一种基于直线拟合的像点定位精度评估方法
CN116592767B (zh) 一种直线移动机构定位误差检测方法和系统
CN110631477A (zh) 用于测量技术的光学成像单元和系统
CN106289086A (zh) 一种用于光学标识点间距离精确标定的双相机测量方法
CN115031626B (zh) 一种基片坐标测量方法
KR20190032475A (ko) 기판 정렬을 위한 머신 비전 시스템 및 정렬 장치
KR100532672B1 (ko) 본딩 장치에서의 옵셋 측정기구 및 본딩 장치에서의 옵셋측정방법
US10812695B2 (en) Three-dimensional positioning system using surface pattern recognition and interpolation
JP7130720B2 (ja) 基板を位置合わせする方法および装置
JP2012133122A (ja) 近接露光装置及びそのギャップ測定方法
CN119850732A (zh) 一种基于单目视觉的平面上目标定位方法
CN105841636B (zh) 基于直线运动部件误差补偿的光轴与物面垂直度检测方法
KR20160006683A (ko) 노광 장치
CN115236950A (zh) 运动台的定位系统及光刻设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16782510

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 15568118

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16782510

Country of ref document: EP

Kind code of ref document: A1