WO2016165238A1 - Oled基板及其制备方法、显示装置 - Google Patents

Oled基板及其制备方法、显示装置 Download PDF

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Publication number
WO2016165238A1
WO2016165238A1 PCT/CN2015/085574 CN2015085574W WO2016165238A1 WO 2016165238 A1 WO2016165238 A1 WO 2016165238A1 CN 2015085574 W CN2015085574 W CN 2015085574W WO 2016165238 A1 WO2016165238 A1 WO 2016165238A1
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Prior art keywords
pattern
cathode
metal extension
layer
groove portion
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PCT/CN2015/085574
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English (en)
French (fr)
Inventor
宋莹莹
洪晓雯
洪豪志
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京东方科技集团股份有限公司
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Priority to EP15883650.2A priority Critical patent/EP3285308B1/en
Priority to US15/124,444 priority patent/US10403694B2/en
Publication of WO2016165238A1 publication Critical patent/WO2016165238A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to an OLED substrate, a preparation method thereof, and a display device.
  • OLED Organic Light-Emitting Device
  • an OLED substrate is taken as an example for description. 1 and 2, the OLED substrate includes a display area 1 and a peripheral area 2 surrounding the display area 1, and the peripheral area 2 includes a plurality of cathode contact areas 21.
  • a source/drain (SD) metal extending portion 11 is formed on the substrate 10 of the OLED substrate, and the source/drain metal extending portion 11 extends from the display region to the cathode contact region of the peripheral region; and is formed over the layer where the source/drain metal extending portion 11 is located.
  • SD source/drain
  • Passivation layer 12 PVX
  • Passivation layer 12 PVX
  • an anode of the OLED device and an anode metal extension are formed over the passivation layer 12, and the anode of the OLED device is located
  • the display area is disposed in the same layer as the anode metal extension 13 , and the anode metal extension 13 also extends from the display area to the cathode contact area of the peripheral area, and the anode metal extension 13 passes through the source and drain metal at the position of the contact area between the via and the cathode.
  • the extension 11 is connected; a pixel defining layer 14 is formed over the anode of the OLED device and the layer where the anode metal extension is located, the pixel defining layer 14 including a first opening in the display region and a second cathode contact region in the peripheral region Opening, each of the first openings is for accommodating the luminescent material of one OLED device, the width of the second opening is much larger than the width of the first opening, and the width of the second opening is greater than The width of the pole contact region is also larger; after forming the pixel defining layer 14, the organic electroluminescent material layer is formed over the entire OLED substrate 10 by continuous printing; since the peripheral region is not used for display, the peripheral region is required at this time.
  • the organic electroluminescent material at the location is cleaned; finally, the cathode and cathode metal extensions of the OLED device are formed, the cathode of the OLED device is located in the display region, and is connected to the anode metal extension 13, and the cathode metal extension extends from the display region to the periphery The cathode contact area of the area.
  • the inventors have found that at least the following problems exist in the prior art: due to the contact area in the cathode
  • the passivation layer 12 at the place has a plurality of via holes. Therefore, when the organic electroluminescent material is formed, the luminescent material falling into the via position Q is difficult to clean, wherein the first opening in the display region 1 can be approximately
  • the Q area shown in Figure 2 is accommodated 2-6, and is only schematically represented in Figure 1. Therefore, how to avoid the formation of an organic electroluminescent material at the location of the via hole is an urgent problem to be solved.
  • the technical problem to be solved by the present invention includes an OLED substrate which is easy to clean and can even omit the step of cleaning the luminescent material, a preparation method thereof, and a display device, in view of the above problems existing in the existing OLED substrate.
  • an OLED substrate is provided, the OLED substrate being divided into a display area and a peripheral area surrounding the display area, the peripheral area having a plurality of cathode contact areas, the OLED substrate comprising:
  • a source/drain metal extension disposed over the substrate, and the source/drain metal extension extends from the display region to a cathode contact region of the peripheral region;
  • a passivation layer disposed over the layer where the source and drain metal extensions are located, and the passivation layer has a plurality of vias at positions corresponding to the cathode contact regions;
  • An anode metal extension disposed over the passivation layer, and the anode metal extension extending from the display region to a cathode contact region of the peripheral region and electrically passing through the via and the source/drain metal extension connection;
  • a pixel defining layer disposed above the layer where the anode metal extension is located, and the pixel defining layer has a plurality of consecutively disposed first patterns at positions corresponding to the display area, each of the first patterns having a convex portion and a groove portion; the pixel defining layer has a plurality of consecutively disposed second patterns at positions corresponding to the cathode contact regions, each of the second patterns having a convex portion and a concave portion a groove portion; wherein a convex portion of the first pattern corresponds to a groove portion of the second pattern, and a groove portion of the first pattern corresponds to a convex portion of the second pattern.
  • the width of the convex portion of the first pattern is the same as the width of the groove portion of the second pattern, and the width of the groove portion of the first pattern and the protrusion of the second pattern The width of the part is the same.
  • the OLED substrate further includes a luminescent material layer; wherein the illuminating A material layer is disposed in the groove portion of the first pattern and disposed above the convex portion of the second pattern.
  • the OLED substrate further includes a cathode and a cathode metal extension connected to the cathode; wherein the cathode and cathode metal extensions are disposed above the luminescent material layer, and the cathode is disposed in the display area
  • the cathode metal extension extends from the display region to a cathode contact region of the peripheral region and is coupled to the anode metal extension through a groove portion of the second pattern.
  • the OLED substrate further includes an anode disposed in the display region, the anode being disposed in the same layer as the anode metal extension and disconnected from the anode metal extension.
  • a method of fabricating an OLED substrate comprising:
  • a pattern including a source/drain metal extension on the substrate by a patterning process; wherein the source/drain metal extension extends from the display region to a cathode contact region of the peripheral region;
  • the width of the convex portion of the first pattern is the same as the width of the groove portion of the second pattern, and the width of the groove portion of the first pattern and the protrusion of the second pattern The width of the part is the same.
  • the method further includes:
  • a luminescent material layer is formed, wherein the luminescent material layer is formed in the groove portion of the first pattern and above the convex portion of the second pattern.
  • the luminescent material layer is formed by continuous printing.
  • the method further includes:
  • a pattern including a cathode and a cathode metal extension connected to the cathode by a patterning process; wherein the cathode and cathode metal extensions are disposed over the layer of luminescent material, and the cathode is disposed in the display region, the cathode metal extension A cathode contact region extending from the display region to the peripheral region and connected to the anode metal extension through a groove portion of the second pattern.
  • an anode is formed while forming the anode metal extension; wherein the anode is disposed in the same layer as the anode metal extension and disconnected from the anode metal extension.
  • a display device comprising the above OLED substrate.
  • the pixel defining layer of the present invention has a plurality of consecutively disposed first patterns at positions corresponding to the display regions, a plurality of successively disposed second patterns are provided at positions corresponding to the cathode contact regions of the peripheral regions, and the first patterns are The convex portion corresponds to the groove portion of the second pattern, and the groove portion of the first pattern corresponds to the convex portion of the second pattern; or the first pattern and the second pattern are opposite patterns. Therefore, when the luminescent material is printed in the pixel defining layer in a continuous printing manner to form the luminescent material layer of the OLED device, the luminescent material is not printed into the groove portion of the second pattern, but remains in the convex portion of the second pattern. On the upper portion, the problem that it is difficult to clean the luminescent material caused by the luminescent material falling under the groove portion of the second pattern and the position corresponding to the via hole of the passivation layer is thereby avoided.
  • FIG. 1 is a schematic plan view of a conventional OLED substrate of Embodiment 1;
  • FIG. 2 is a schematic cross-sectional view of the cathode contact region A-A of FIG. 1 and a pixel defining layer of the display region;
  • FIG. 3 is a schematic diagram of comparison between a pixel defining layer of a cathode contact region of an OLED and a pixel defining layer of a display region according to Embodiment 1 of the present invention
  • Figure 4 is a schematic view showing the formation of a layer of luminescent material on the basis of Figure 3;
  • Figure 5 is a schematic view showing the formation of a cathode metal extension on the basis of Figure 4;
  • the reference numerals are: 1, the display area; 2, the peripheral area; 21, the cathode contact area; 10, the substrate; 11, the source and drain metal extension; 12, the passivation layer; 13, the anode metal extension; a limiting layer; 15, a layer of luminescent material; 16, a cathode metal extension; 100, a first pattern; 101, a groove portion of the first pattern; 102, a raised portion of the first pattern; 200, a second pattern; a groove portion of the second pattern; 202, a raised portion of the second pattern.
  • the present embodiment provides an OLED substrate, wherein the planar schematic view of the OLED substrate of the present embodiment is the same as that of the prior art, and thus is represented by FIG.
  • the OLED substrate is divided into a display region 1 and a peripheral region 2 surrounding the display region 1, wherein the peripheral region 2 has a plurality of cathode contact regions 21.
  • the OLED substrate of the present embodiment specifically includes: a substrate 10; a source/drain metal extension 11 disposed above the substrate 10, and the source/drain metal extension 11 extending from the display region 1 to the cathode of the peripheral region 2 a contact region 21; a passivation layer 12 disposed above the layer where the source/drain metal extension 11 is located, and the passivation layer 12 has a plurality of via holes at positions corresponding to the cathode contact regions 21; an anode metal extension portion 13.
  • the anode metal extension 13 extends from the display region 1 to the cathode contact region 21 of the peripheral region 2, and passes through the via and the source and drain metal
  • the extension portion 11 is electrically connected;
  • the pixel defining layer 14 is disposed above the layer where the anode metal extension portion 13 is located, and the pixel defining layer 14 has a plurality of consecutively disposed first positions at positions corresponding to the display region 1 a pattern 100, each of the first patterns 100 having a raised portion 102 and a groove portion 101 having a plurality of consecutive positions at positions corresponding to the cathode contact regions 21 of the peripheral region 2 Second pattern 200, each of said The pattern 200 has a convex portion 202 and a groove portion 201; wherein the convex portion 102 of the first pattern corresponds to the groove portion 201 of the second pattern, and the groove portion 101 of the first pattern Corresponding to the convex portion 202 of the second pattern.
  • the pixel defining layer 14 has a plurality of first patterns 100 arranged continuously at positions corresponding to the display region 1, the cathode contact regions 21 with the peripheral regions 2 are The position of the application has a plurality of second patterns 200 arranged in series, and the convex portion 102 of the first pattern corresponds to the groove portion 201 of the second pattern, and the groove portion 101 of the first pattern and the convex portion of the second pattern 202 corresponds; or it can be said that the first pattern 100 and the second pattern 200 are opposite patterns.
  • the luminescent material when the luminescent material is printed in a continuous printing manner to form the luminescent material layer 15 of the OLED device, the luminescent material is not printed into the groove portion 201 of the second pattern 200, but remains in the convex portion of the second pattern.
  • the continuous printing method means that printing is sequentially performed along the row direction or the column direction of the groove portion 101 of the first pattern.
  • the luminescent material can only be printed to the convex of the second pattern 200.
  • the groove portion 101 of the first pattern located in the display region 1 may correspond to, for example, a size of about 2-6 Q positions, and FIG. 3 is only a schematic representation.
  • each layer structure of the thin film transistor such as a gate layer, a gate insulating layer, an active layer, a source and a drain, etc., the source/drain metal extension portion 11 and the source and drain electrodes may be disposed on the substrate 10. It is set in the same layer.
  • the width of the convex portion 102 of the first pattern is the same as the width of the groove portion 201 of the second pattern, and the groove of the first pattern
  • the width of the portion 101 is the same as the width of the raised portion 202 of the second pattern. The reason for this is to avoid as much as possible the problem that the luminescent material falls into the groove portion 201 of the second pattern when the organic light-emitting material layer is formed, resulting in difficulty in cleaning.
  • the OLED substrate of the embodiment further includes a luminescent material layer 15; wherein the luminescent material layer 15 is disposed in the groove portion 101 of the first pattern, and is disposed in the Above the raised portion 202 of the second pattern. That is, when the luminescent material is continuously printed to form the luminescent material layer 15, in the display region 1, the luminescent material falls into the groove portion 101 of each of the first patterns to form the luminescent material layer 15 of each OLED light emitting unit; In the cathode contact region 21 of the peripheral region 2, the luminescent material falls on the convex portion 202 of the second pattern, so that the luminescent material can be held on the convex portion 202 of the second pattern without cleaning the luminescent material, improving Productivity.
  • the luminescent material on the convex portion 202 of the second pattern can also be cleaned, and the difficulty of the cleaning work at this time is greatly reduced compared with the existing OLED substrate structure.
  • the material of the pixel defining layer 14 can be sparse The water-based material, therefore, does not flow into the groove portion 201 of the second pattern when the luminescent material is printed onto the convex portion 202 of the second pattern.
  • the OLED substrate of the embodiment further includes a cathode, and a cathode metal extension 16 connected to the cathode; wherein the cathode and cathode metal extensions 16 are disposed above the luminescent material layer 15 And the cathode is disposed in the display region 1, the cathode metal extension 16 extending from the display region 1 to the cathode contact region 21 of the peripheral region 2, and passing through the groove portion 201 of the second pattern The anode metal extensions 13 are connected. At this time, the signal required for the cathode can be input at the position of the cathode contact region 21.
  • the OLED substrate of the embodiment further includes an anode disposed in the display region 1 , and the anode is disposed in the same layer as the anode metal extension 13 and disconnected from the anode metal extension 13 . It can be understood that each OLED light emitting unit formed on the OLED substrate has a single anode, and each anode is driven by a thin film transistor in the corresponding pixel unit.
  • the structure of the OLED substrate provided in this embodiment solves the problem that it is difficult to clean the luminescent material of the existing OLED substrate.
  • This embodiment provides a method for preparing an OLED substrate, which can be used to prepare the OLED substrate in Embodiment 1.
  • the preparation method specifically includes:
  • Step 1 On the substrate 10, a pattern including the source/drain metal extension portion 11 is formed by a patterning process; wherein the source/drain metal extension portion 11 extends from the display region 1 to the cathode contact region 21 of the peripheral region 2 .
  • the method may further include forming a layer structure of the thin film transistor on the substrate 10, wherein the source/drain metal extension 11 may be the source of the thin film transistor.
  • the pole and drain are formed in a single patterning process, which simplifies the process steps.
  • the substrate 10 may be made of a transparent material such as glass, resin, sapphire or quartz in this step, and is pre-cleaned. Thereafter, a source/drain metal film can be formed on the substrate 10 by sputtering, thermal evaporation or chemical vapor deposition (CVD), and the source/drain metal film is subjected to photoresist coating, exposure, and development. Etching, photoresist stripping, thereby forming a pattern including the source and drain metal extensions 11.
  • CVD chemical vapor deposition
  • the material of the source/drain metal film may be one of molybdenum (Mo), molybdenum-niobium alloy (MoNb), aluminum (Al), aluminum-niobium alloy (AlNd), titanium (Ti), and copper (Cu), or
  • the source/drain metal film may be a single layer or a multilayer composite laminate formed of a plurality of materials in the above materials, and optionally, it may be a single layer or a multilayer composite film composed of Mo, Al or an alloy containing Mo or Al. .
  • Step 2 On the substrate 10 on which the above steps are completed, a passivation layer 12 is formed, and a plurality of via holes are formed in the passivation layer 12 at positions corresponding to the cathode contact regions 21 by a patterning process.
  • the passivation layer 12 may be formed by a thermal growth, atmospheric pressure chemical vapor deposition, low pressure chemical vapor deposition, plasma assisted chemical vapor deposition or sputtering, etc.; 12 is coated with photoresist, exposed, developed, etched, and photoresist stripped to form a plurality of vias through the passivation layer 12.
  • the material of the passivation layer 12 may be silicon oxide (SiOx), silicon nitride (SiNx), germanium oxide (HfOx), silicon nitrogen oxide (SiON), aluminum oxide (AlOx).
  • the passivation layer 12 may be composed of a multilayer film of two or three of the above materials.
  • Step 3 On the substrate 10 that completes the above steps, a pattern including the anode metal extension 13 is formed by a patterning process; wherein the anode metal extension 13 extends from the display region 1 to the cathode contact of the peripheral region 2
  • the region 21 is electrically connected to the source/drain metal extension 11 through a via.
  • an anode is also formed in the display region 1, wherein the anode is disconnected from the anode metal extension 13.
  • the conductive film may be deposited by sputtering, thermal evaporation or chemical vapor deposition, and the anode and anode metal extensions 13 may be formed by a patterning process.
  • the anode is electrically connected to the drain of the thin film transistor, and the anode metal extension 13 is electrically connected to the source/drain metal extension 11 through the via.
  • the conductive film may be ITO (indium tin oxide) / Ag (silver) / ITO (indium tin oxide) or Ag (silver) / ITO (indium tin oxide) structure; or, the ITO in the above structure is replaced by IZO ( Indium zinc oxide), IGZO (indium gallium zinc oxide) or InGaSnO (indium gallium tin oxide).
  • ITO Indium zinc oxide
  • IGZO indium gallium zinc oxide
  • InGaSnO indium gallium tin oxide
  • the inorganic metal oxide includes indium tin oxide or zinc oxide
  • the organic conductive polymer includes PEDOT: SS, PANI, and the metal material includes gold, Copper, silver or platinum.
  • Step 4 forming a pixel defining layer 14 on the substrate 10 that completes the above steps, and forming a plurality of consecutively disposed first patterns 100 at a position corresponding to the display region 1 in the pixel defining layer 14 by patterning, each
  • the first pattern 100 has a convex portion 102 and a groove portion 101; a plurality of consecutively disposed second portions are formed in the pixel defining layer 14 at positions corresponding to the cathode contact regions 21 of the peripheral region 2 a pattern 200, each of the second patterns 200 having a convex portion 202 and a groove portion 201; wherein the convex portion 102 of the first pattern corresponds to the groove portion 201 of the second pattern, The groove portion 101 of the first pattern corresponds to the convex portion 202 of the second pattern.
  • the pixel defining layer 14 may be formed by a coating method; then, a plurality of first patterns 100 are formed in a position corresponding to the display region 1 in the pixel defining layer 14 by exposure, development, or the like; and in the pixel A plurality of second patterns 200 are formed at positions corresponding to the cathode contact regions 21 in the defining layer 14.
  • the material of the pixel defining layer 14 may be a lyophobic organic fluorine-containing material.
  • the width of the convex portion 102 of the first pattern may be, for example, the same as the width of the groove portion 201 of the second pattern, and the width of the groove portion 101 of the first pattern may be, for example, the same as the second pattern.
  • the width of the raised portion 202 is the same. The reason for this is to avoid as much as possible the problem that the luminescent material falls into the groove portion 201 of the second pattern when the organic light-emitting material layer is formed, resulting in difficulty in cleaning.
  • Step 5 forming a luminescent material layer 15 on the substrate 10 that completes the above steps; wherein the luminescent material layer is formed in the groove portion 101 of the first pattern and above the convex portion 202 of the second pattern .
  • the luminescent material layer 15 can be formed by continuous printing.
  • Step 6 On the substrate 10 that completes the above steps, a pattern including a cathode and a cathode metal extension 16 connected to the cathode is formed by a patterning process; wherein the cathode is formed in the display region 1, and the cathode metal extension 16 is The display region 1 extends to the cathode contact region 21 of the peripheral region 2 and is connected to the anode metal extension 13 by a groove portion 201 of the second pattern.
  • a cathode and a cathode metal extension 16 connected to the cathode may be formed by sputtering or evaporation.
  • the material of the cathode and cathode metal extensions 16 is a low work function metal material, such as: lithium, magnesium, calcium, barium, aluminum, indium, etc. or an alloy of the above metals with copper, gold, silver; or, cathode and cathode metal
  • the extension 16 may be made of a very thin buffer insulating layer (such as LiF, CsCO 3 , etc.) and the above metal or alloy.
  • the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the display device of the present embodiment includes the OLED substrate of Embodiment 1, its performance is better.
  • the display device of the embodiment may further include other conventional structures such as a power supply unit, a display driving unit, and the like.

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Abstract

一种OLED基板及其制备方法、显示装置，可解决现有的OLED基板在清理发光材料时清理困难的问题。所述OLED基板划分成显示区域（1）和周边区域（2），周边区域（2）具有多个阴极接触区（21），OLED基板包括：基底（10）；设置在基底（10）上的源漏金属延伸部（11）；钝化层（12），其在与阴极接触区（21）对应的位置具有多个过孔（Q）；阳极金属延伸部（13），其通过过孔（Q）与源漏金属延伸部（11）电连接；像素限定层（14），其在与显示区域（1）对应的位置具有多个第一图案（100），每个第一图案（100）具有一个凸起部（102）和一个凹槽部（101），其在与阴极接触区（21）对应的位置具有多个第二图案（200），每个第二图案（200）具有一个凸起部（202）和一个凹槽部（201），第一图案（100）的凸起部（102）与第二图案的凹槽部（201）对应，第一图案（100）的凹槽部（101）与第二图案的凸起部（202）对应。

Description

OLED基板及其制备方法、显示装置 技术领域
本发明属于显示技术领域，具体涉及一种OLED基板及其制备方法、显示装置。
背景技术
OLED(有机电致发光器件：Organic Light-Emitting Device，简称OLED)由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广等优点，因而有着广阔的应用前景。
OLED在显示器方面有着极其广泛的应用。具体的，以一OLED基板为例进行说明。结合图1和图2所示，该OLED基板包括显示区域1，以及将显示区域1包围的周边区域2，且周边区域2包括多个阴极接触区21。其中，在OLED基板的基底10上形成源漏(SD)金属延伸部11，该源漏金属延伸部11从显示区域延伸至周边区域的阴极接触区；在源漏金属延伸部11所在层上方形成钝化层12(PVX)，且在位于阴极接触区的钝化层12中形成有多个过孔；在钝化层12上方形成有OLED器件的阳极以及阳极金属延伸部，OLED器件的阳极位于显示区域，且与阳极金属延伸部13同层设置，阳极金属延伸部13同样从显示区域延伸至周边区域的阴极接触区，阳极金属延伸部13通过过孔与阴极接触区位置处的源漏金属延伸部11连接；在OLED器件的阳极以及阳极金属延伸部所在层上方形成有像素限定层14，该像素限定层14包括位于显示区域的第一开口，以及位于周边区域的阴极接触区的第二开口，每一个第一开口用于容纳一个OLED器件的发光材料，第二开口的宽度远大于第一开口的宽度，且第二开口的宽度比阴极接触区的宽度还要大一些；在形成像素限定层14之后，通过连续印刷的方式在整个OLED基底10上方形成有机电致发光材料层；由于周边区域不用于显示，此时需要将周边区域位置处的有机电致发光材料清洁干净；最后形成OLED器件的阴极和阴极金属延伸部，OLED器件的阴极位于显示区域，且与阳极金属延伸部13连接，阴极金属延伸部从显示区域延伸至周边区域的阴极接触区。
发明人发现，现有技术中至少存在如下问题：由于在阴极接触区 处的钝化层12具有多个过孔，因此，在形成有机电致发光材料时，落入过孔位置Q的发光材料是很难清理的，其中，显示区域1中的第一开口大约可以容纳2-6个图2中所示的Q区域，而在图1中只是示意性的表示。因此，如何避免在过孔所在位置形成有机电致发光材料是一个亟需解决的问题。
发明内容
本发明所要解决的技术问题包括，针对现有的OLED基板存在的上述问题，提供一种易于清洁、甚至可以省略清洁发光材料的步骤的OLED基板及其制备方法、显示装置。
根据本发明的一个方面，提供了一种OLED基板，所述OLED基板划分成显示区域和围绕显示区域的周边区域，所述周边区域具有多个阴极接触区，所述OLED基板包括：
基底；
源漏金属延伸部，其设置在基底上方，且所述源漏金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区；
钝化层，其设置在源漏金属延伸部所在层上方，且所述钝化层在与所述阴极接触区对应的位置具有多个过孔；
阳极金属延伸部，其设置在所述钝化层上方，且所述阳极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过过孔与所述源漏金属延伸部电连接；
像素限定层，其设置在所述阳极金属延伸部所在层上方，且所述像素限定层在与所述显示区域对应的位置具有多个连续设置的第一图案，每个所述第一图案具有一个凸起部和一个凹槽部；所述像素限定层在与所述阴极接触区对应的位置具有多个连续设置的第二图案，每个所述第二图案具有一个凸起部和一个凹槽部；其中，所述第一图案的凸起部与所述第二图案的凹槽部对应，所述第一图案的凹槽部与所述第二图案的凸起部对应。
可选的是，所述第一图案的凸起部的宽度与所述第二图案的凹槽部的宽度相同，所述第一图案的凹槽部的宽度与所述第二图案的凸起部的宽度相同。
可选的是，所述OLED基板还包括发光材料层；其中，所述发光 材料层设置在所述第一图案的凹槽部中以及设置在所述第二图案的凸起部上方。
进一步可选的是，所述OLED基板还包括阴极以及与阴极连接的阴极金属延伸部；其中，所述阴极和阴极金属延伸部设置在发光材料层上方，且所述阴极设置在显示区域，所述阴极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过第二图案的凹槽部与所述阳极金属延伸部连接。
可选的是，所述OLED基板还包括设置在显示区域的阳极，所述阳极与所述阳极金属延伸部同层设置且与所述阳极金属延伸部断开。
根据本发明的另一方面，提供了一种OLED基板的制备方法，包括：
在基底上，通过构图工艺形成包括源漏金属延伸部的图形；其中，所述源漏金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区；
在完成上述步骤的基底上形成钝化层，并通过构图工艺在所述钝化层中与所述阴极接触区对应的位置形成多个过孔；
在完成上述步骤的基底上，通过构图工艺形成包括阳极金属延伸部的图形；其中，所述阳极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过过孔与所述源漏金属延伸部电连接；
在完成上述步骤的基底上形成像素限定层，并通过构图工艺在所述像素限定层中与所述显示区域对应的位置形成多个连续设置的第一图案，每个所述第一图案具有一个凸起部和一个凹槽部，在所述像素限定层中与所述周边区域的阴极接触区对应的位置形成多个连续设置的第二图案，每个所述第二图案具有一个凸起部和一个凹槽部；其中，所述第一图案的凸起部与所述第二图案的凹槽部对应，所述第一图案的凹槽部与所述第二图案的凸起部对应。
可选的是，所述第一图案的凸起部的宽度与所述第二图案的凹槽部的宽度相同，所述第一图案的凹槽部的宽度与所述第二图案的凸起部的宽度相同。
可选的是，在所述形成像素限定层的步骤之后，所述方法还包括：
形成发光材料层，其中，所述发光材料层形成在所述第一图案的凹槽部中以及所述第二图案的凸起部上方。
进一步可选的是，所述发光材料层是采用连续打印的方式形成的。
进一步可选的是，在所述形成发光材料层的步骤之后，所述方法还包括：
通过构图工艺形成包括阴极以及与阴极连接的阴极金属延伸部的图形；其中，所述阴极和阴极金属延伸部设置在发光材料层上方，且所述阴极设置在显示区域，所述阴极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过第二图案的凹槽部与所述阳极金属延伸部连接。
可选的是，在形成所述阳极金属延伸部的同时还形成阳极；其中，所述阳极与所述阳极金属延伸部同层设置且与所述阳极金属延伸部断开。
根据本发明的又一方面，提供了一种显示装置，其包括上述的OLED基板。
本发明具有如下有益效果：
由于本发明的像素限定层在与显示区域对应的位置具有多个连续设置的第一图案，在与周边区域的阴极接触区对应的位置具有多个连续设置的第二图案，且第一图案的凸起部与第二图案的凹槽部对应，第一图案的凹槽部与第二图案的凸起部对应；或者说，第一图案和第二图案是相反的图案。因此，在采用连续打印的方式在像素限定层中印刷发光材料以形成OLED器件的发光材料层时，发光材料不会印刷至第二图案的凹槽部中，只是留在了第二图案的凸起部上，由此避免了发光材料落入第二图案的凹槽部下方与钝化层的过孔对应的位置而导致的难以清理发光材料的问题。
附图说明
图1为现有的和实施例1的OLED基板的平面示意图；
图2为图1的阴极接触区A-A剖面图与显示区域的像素限定层比较示意图；
图3为本发明实施例1的OLED阴极接触区的像素限定层与显示区域的像素限定层的比较示意图；
图4为在图3的基础上形成发光材料层的示意图；
图5为在图4的基础上形成阴极金属延伸部的示意图；
其中附图标记为：1、显示区域；2、周边区域；21、阴极接触区；10、基底；11、源漏金属延伸部；12、钝化层；13、阳极金属延伸部；14、像素限定层；15、发光材料层；16、阴极金属延伸部；100、第一图案；101、第一图案的凹槽部；102、第一图案的凸起部；200、第二图案；201、第二图案的凹槽部；202、第二图案的凸起部。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
结合图1、3所示，本实施例提供了一种OLED基板，其中，由于本实施例的OLED基板的平面示意图与现有技术相同，因此均用图1表示。将该OLED基板划分成显示区域1和围绕显示区域1的周边区域2，其中，周边区域2具有多个阴极接触区21。本实施例的OLED基板具体包括：基底10；源漏金属延伸部11，其设置在基底10上方，且所述源漏金属延伸部11从所述显示区域1延伸至所述周边区域2的阴极接触区21；钝化层12，其设置在源漏金属延伸部11所在层上方，且所述钝化层12在与所述阴极接触区21对应的位置具有多个过孔；阳极金属延伸部13，其设置在所述钝化层12上方，且所述阳极金属延伸部13从所述显示区域1延伸至所述周边区域2的阴极接触区21，并通过过孔与所述源漏金属延伸部11电连接；像素限定层14，其设置在所述阳极金属延伸部13所在层上方，且所述像素限定层14在与所述显示区域1对应的位置具有多个连续设置的第一图案100，每个所述第一图案100具有一个凸起部102和一个凹槽部101，所述像素限定层14在与所述周边区域2的阴极接触区21对应的位置具有多个连续设置的第二图案200，每个所述第二图案200具有一个凸起部202和一个凹槽部201；其中，所述第一图案的凸起部102与所述第二图案的凹槽部201对应，所述第一图案的凹槽部101与所述第二图案的凸起部202对应。
在本实施例中，由于像素限定层14在与显示区域1对应的位置具有多个连续设置的第一图案100，在与周边区域2的阴极接触区21对 应的位置具有多个连续设置的第二图案200，且第一图案的凸起部102与第二图案的凹槽部201对应，第一图案的凹槽部101与第二图案的凸起部202对应；或者也可以说，第一图案100和第二图案200是相反的图案。因此，在采用连续打印的方式印刷发光材料以形成OLED器件的发光材料层15时，发光材料不会印刷至第二图案200的凹槽部201中，只是留在了第二图案的凸起部202上，由此避免了发光材料落入第二图案的凹槽部201下方与钝化层12的过孔对应的位置Q而导致的难以清理发光材料的问题。需要说明的是，连续打印的方式是指，沿第一图案的凹槽部101所在行方向或者列方向逐次印刷。由于本实施例中第一图案100和第二图案200的凹槽部和凸起部位置恰恰相反，因此，当印刷到第二图案200时，发光材料只能被印刷至第二图案200的凸起部位置。需要说明的是，在图3中，位于显示区域1的第一图案的凹槽部101例如可以对应大约2-6个Q位置的大小，图3只是示意性的表示。
其中，在基底10上还可以设置有薄膜晶体管的各层结构，例如栅极层、栅极绝缘层、有源层、源极和漏极等，源漏金属延伸部11与源极和漏极是同层设置的。
可选的，在根据本发明实施例的OLED基板中，所述第一图案的凸起部102的宽度与所述第二图案的凹槽部201的宽度相同，所述第一图案的凹槽部101的宽度与所述第二图案的凸起部202的宽度相同。之所以如此设置，是为了尽可能避免在形成有机发光材料层时，发光材料落入第二图案的凹槽部201中而导致清洁困难的问题。
如图4所示，可选的，本实施例的OLED基板还包括发光材料层15；其中，所述发光材料层15设置在所述第一图案的凹槽部101中，以及设置在所述第二图案的凸起部202上方。也就是说，在连续打印发光材料以形成发光材料层15时，在显示区域1，发光材料落入每个第一图案的凹槽部101，以形成每一个OLED发光单元的发光材料层15；在周边区域2的阴极接触区21，发光材料落在第二图案的凸起部202上，从而使发光材料可以保持在第二图案的凸起部202上而无需对发光材料进行清洁，提高了生产效率。当然，也可以将第二图案的凸起部202上的发光材料清理干净，与现有的OLED基板结构相比，此时的清理工作的难度大大降低。而且，像素限定层14的材料可以为疏 水性材料，因此，发光材料被印刷至第二图案的凸起部202上时，也不会流入第二图案的凹槽部201中。
如图5所示，进一步可选的，本实施例的OLED基板还包括阴极，以及与阴极连接的阴极金属延伸部16；其中，所述阴极和阴极金属延伸部16设置在发光材料层15上方，且所述阴极设置在显示区域1，所述阴极金属延伸部16从所述显示区域1延伸至所述周边区域2的阴极接触区21，并通过第二图案的凹槽部201与所述阳极金属延伸部13连接。此时，可以在阴极接触区21的位置输入阴极所需要的信号。
可选的，本实施例的OLED基板还包括设置在显示区域1的阳极，所述阳极与所述阳极金属延伸部13同层设置且与所述阳极金属延伸部13断开。可以理解的是，OLED基板上所形成的每一个OLED发光单元均具有一个单独的阳极，每个阳极通过相应的像素单元中的薄膜晶体管进行驱动。
本实施例所提供的OLED基板的结构，解决了现有OLED基板的难以清理发光材料的问题。
实施例2：
本实施例提供了一种OLED基板的制备方法，其可用于制备实施例1中的OLED基板。该制备方法具体包括：
步骤一、在基底10上，通过构图工艺形成包括源漏金属延伸部11的图形；其中，所述源漏金属延伸部11从所述显示区域1延伸至所述周边区域2的阴极接触区21。
需要说明的是，在基底10上形成源漏金属延伸部11之前，所述方法还可以包括在基底10上形成薄膜晶体管的各层结构，其中，源漏金属延伸部11可以与薄膜晶体管的源极和漏极采用一次构图工艺形成，从而可以简化工艺步骤。
具体的，在该步骤中基底10例如可以采用玻璃、树脂、蓝宝石或石英等透明材料制成，且经过预先清洗。之后，可以在基底10上采用溅射方式、热蒸发方式或化学气相沉积(Chemical Vapor Deposition：简称CVD)方式形成源漏金属薄膜，对该源漏金属薄膜进行光刻胶涂覆、曝光、显影、刻蚀、光刻胶剥离，从而形成包括源漏金属延伸部11的图形。
其中，源漏金属薄膜的材料可以采用钼(Mo)、钼铌合金(MoNb)、铝(Al)、铝钕合金(AlNd)、钛(Ti)和铜(Cu)中的一种，或者，源漏金属薄膜可以是以上材料中的多种材料形成的单层或多层复合叠层，可选地，其可以为Mo、Al或含Mo、Al的合金组成的单层或多层复合膜。
步骤二、在完成上述步骤的基底10上，形成钝化层12，并通过构图工艺在所述钝化层12中与所述阴极接触区21对应的位置形成多个过孔。
具体的，在该步骤中，可以采用热生长、常压化学气相沉积、低压化学气相沉积、等离子辅助体化学气相淀积或溅射等制备方法，形成钝化层12；然后通过在钝化层12上涂覆光刻胶、曝光、显影、刻蚀、光刻胶剥离来形成贯穿钝化层12的多个过孔。
其中，钝化层12的材料可以为硅的氧化物(SiOx)、硅的氮化物(SiNx)、铪的氧化物(HfOx)、硅的氮氧化物(SiON)、铝的氧化物(AlOx)等，或者，钝化层12可以由上述材料中的两种或三种的多层膜组成。
步骤三、在完成上述步骤的基底10上，通过构图工艺形成包括阳极金属延伸部13的图形；其中，所述阳极金属延伸部13从所述显示区域1延伸至所述周边区域2的阴极接触区21，并通过过孔与所述源漏金属延伸部11电连接。
可选的，与此同时，在显示区域1还形成阳极，其中，阳极与阳极金属延伸部13断开设置。
具体的，在该步骤中，可以采用溅射方式、热蒸发方式或化学气相沉积方式沉积导电膜，并通过构图工艺形成阳极和阳极金属延伸部13。阳极与薄膜晶体管的漏极电连接，阳极金属延伸部13通过过孔与源漏金属延伸部11电连接。
其中，导电膜可以为ITO(氧化铟锡)/Ag(银)/ITO(氧化铟锡)或者Ag(银)/ITO(氧化铟锡)结构；或者，把上述结构中的ITO换成IZO(氧化铟锌)、IGZO(氧化铟镓锌)或InGaSnO(氧化铟镓锡)。当然，也可以采用具有导电性能及高功函数值的无机金属氧化物、有机导电聚合物或金属材料形成导电膜。无机金属氧化物包括氧化铟锡或氧化锌，有机导电聚合物包括PEDOT:SS、PANI，金属材料包括金、 铜、银或铂。
步骤四、在完成上述步骤的基底10上，形成像素限定层14，并通过构图在所述像素限定层14中与所述显示区域1对应的位置形成多个连续设置的第一图案100，每个所述第一图案100具有一个凸起部102和一个凹槽部101；在所述像素限定层14中与所述周边区域2的阴极接触区21对应的位置形成多个连续设置的第二图案200，每个所述第二图案200具有一个凸起部202和一个凹槽部201；其中，所述第一图案的凸起部102与所述第二图案的凹槽部201对应，所述第一图案的凹槽部101与所述第二图案的凸起部202对应。
具体的，在该步骤中，可以采用涂布方式形成像素限定层14；然后通过曝光、显影等，在像素限定层14中与显示区域1对应的位置形成多个第一图案100；并且在像素限定层14中与阴极接触区21对应的位置形成多个第二图案200。
其中，像素限定层14的材料可以为疏液的有机含氟材料。所述第一图案的凸起部102的宽度例如可以与所述第二图案的凹槽部201的宽度相同，所述第一图案的凹槽部101的宽度例如可以与所述第二图案的凸起部202的宽度相同。之所以如此设置，是为了尽可能避免在形成有机发光材料层时，发光材料落入第二图案的凹槽部201中而导致清洁困难的问题。
步骤五、在完成上述步骤的基底10上，形成发光材料层15；其中，所述发光材料层形成在所述第一图案的凹槽部101中以及所述第二图案的凸起部202上方。
具体的，在该步骤中，可以采用连续打印的方式形成发光材料层15。
步骤六、在完成上述步骤的基底10上，通过构图工艺形成包括阴极以及与阴极连接的阴极金属延伸部16的图形；其中，所述阴极形成在显示区域1，所述阴极金属延伸部16从所述显示区域1延伸至所述周边区域2的阴极接触区21并通过第二图案的凹槽部201与所述阳极金属延伸部13连接。
具体的，在该步骤中，可以采用溅射或蒸镀形成阴极以及与阴极连接的阴极金属延伸部16。
其中，阴极和阴极金属延伸部16的材料为低功函数金属材料，比 如：锂、镁、钙、锶、铝、铟等或上述金属与铜、金、银的合金；或者，阴极和阴极金属延伸部16可以采用一层很薄的缓冲绝缘层(如LiF、CsCO3等)和上述金属或合金制成。
至此，形成了OLED基板。
实施例3：
本实施例提供了一种显示装置，其包括上述OLED基板。该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
由于本实施例的显示装置包括了实施例1中的OLED基板，因此其性能更好。
当然，本实施例的显示装置还可以包括其他常规结构，如电源单元、显示驱动单元等。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种OLED基板，所述OLED基板划分成显示区域和围绕显示区域的周边区域，所述周边区域具有多个阴极接触区，
    其中，所述OLED基板包括：
    基底；
    源漏金属延伸部，其设置在基底上方，且所述源漏金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区；
    钝化层，其设置在源漏金属延伸部所在层上方，且所述钝化层在与所述阴极接触区对应的位置具有多个过孔；
    阳极金属延伸部，其设置在所述钝化层上方，且所述阳极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过过孔与所述源漏金属延伸部电连接；
    像素限定层，其设置在所述阳极金属延伸部所在层上方，且所述像素限定层在与所述显示区域对应的位置具有多个连续设置的第一图案，每个所述第一图案具有一个凸起部和一个凹槽部；所述像素限定层在与所述阴极接触区对应的位置具有多个连续设置的第二图案，每个所述第二图案具有一个凸起部和一个凹槽部；其中，所述第一图案的凸起部与所述第二图案的凹槽部对应，所述第一图案的凹槽部与所述第二图案的凸起部对应。
  2. 根据权利要求1所述的OLED基板，其中，所述第一图案的凸起部的宽度与所述第二图案的凹槽部的宽度相同，所述第一图案的凹槽部的宽度与所述第二图案的凸起部的宽度相同。
  3. 根据权利要求1所述的OLED基板，还包括发光材料层，其中，所述发光材料层设置在所述第一图案的凹槽部中以及设置在所述第二图案的凸起部上方。
  4. 根据权利要求3所述的OLED基板，还包括阴极以及与阴极连接的阴极金属延伸部，其中，所述阴极和阴极金属延伸部设置在发光材料层上方，且所述阴极设置在显示区域，所述阴极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过第二图案的凹槽部与所述阳极金属延伸部连接。
  5. 根据权利要求1-4中任一项所述的OLED基板，还包括设置在 显示区域的阳极，所述阳极与所述阳极金属延伸部同层设置且与所述阳极金属延伸部断开。
  6. 一种OLED基板的制备方法，包括：
    在基底上，通过构图工艺形成包括源漏金属延伸部的图形；其中，所述源漏金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区；
    在完成上述步骤的基底上形成钝化层，并通过构图工艺在所述钝化层中与所述阴极接触区对应的位置形成多个过孔；
    在完成上述步骤的基底上，通过构图工艺形成包括阳极金属延伸部的图形；其中，所述阳极金属延伸部从所述显示区域延伸至所述周边区域的阴极接触区并通过过孔与所述源漏金属延伸部电连接；
    在完成上述步骤的基底上形成像素限定层，并通过构图工艺在所述像素限定层中与所述显示区域对应的位置形成多个连续设置的第一图案，每个所述第一图案具有一个凸起部和一个凹槽部，在所述像素限定层中与所述周边区域的阴极接触区对应的位置形成多个连续设置的第二图案，每个所述第二图案具有一个凸起部和一个凹槽部；其中，所述第一图案的凸起部与所述第二图案的凹槽部对应，所述第一图案的凹槽部与所述第二图案的凸起部对应。
  7. 根据权利要求6所述的OLED基板的制备方法，其中，所述第一图案的凸起部的宽度与所述第二图案的凹槽部的宽度相同，所述第一图案的凹槽部的宽度与所述第二图案的凸起部的宽度相同。
  8. 根据权利要求6所述的OLED基板的制备方法，其中，在所述形成像素限定层的步骤之后，所述方法还包括：
    形成发光材料层，其中，所述发光材料层形成在所述第一图案的凹槽部中以及所述第二图案的凸起部上方。
  9. 根据权利要求8所述的OLED基板的制备方法，其中，所述发光材料层是采用连续打印的方式形成的。
  10. 根据权利要求9所述的OLED基板的制备方法，其中，在所述形成发光材料层的步骤之后，所述方法还包括：
    通过构图工艺形成包括阴极以及与阴极连接的阴极金属延伸部的图形；其中，所述阴极和阴极金属延伸部设置在发光材料层上方，且所述阴极设置在显示区域，所述阴极金属延伸部从所述显示区域延伸 至所述周边区域的阴极接触区并通过第二图案的凹槽部与所述阳极金属延伸部连接。
  11. 根据权利要求6所述的OLED基板的制备方法，其中，在形成所述阳极金属延伸部的同时还形成阳极；其中，所述阳极与所述阳极金属延伸部同层设置且与所述阳极金属延伸部断开。
  12. 一种显示装置，包括根据权利要求1-5中任意一项所述的OLED基板。
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