WO2016158643A1 - Thermal print head and method for manufacturing thermal print head - Google Patents

Thermal print head and method for manufacturing thermal print head Download PDF

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Publication number
WO2016158643A1
WO2016158643A1 PCT/JP2016/059312 JP2016059312W WO2016158643A1 WO 2016158643 A1 WO2016158643 A1 WO 2016158643A1 JP 2016059312 W JP2016059312 W JP 2016059312W WO 2016158643 A1 WO2016158643 A1 WO 2016158643A1
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WO
WIPO (PCT)
Prior art keywords
print head
thermal print
layer
head according
scanning direction
Prior art date
Application number
PCT/JP2016/059312
Other languages
French (fr)
Japanese (ja)
Inventor
章治郎 大長
Original Assignee
ローム株式会社
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Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to JP2017509856A priority Critical patent/JP6654628B2/en
Publication of WO2016158643A1 publication Critical patent/WO2016158643A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads

Definitions

  • the present invention relates to a thermal print head and a method for manufacturing the thermal print head.
  • a conventionally known thermal print head includes a substrate, a glaze layer, a heating resistor, and an electrode.
  • a thermal print head is disclosed in Patent Document 1, for example.
  • the glaze layer is formed on the substrate.
  • the glaze layer plays a role of storing heat generated by the heating resistor.
  • the heating resistor is formed in the glaze layer.
  • the electrode has two parts spaced apart from each other. A heating part is formed in the heating resistor so as to straddle these two parts.
  • the thermal print head is built into the printer and is a basic module that determines the print quality of the printer. For this reason, the mounting accuracy of the thermal print head to the printer is important.
  • the present invention has been conceived under the circumstances described above, and its main problem is to provide a thermal print head and a method for manufacturing a thermal print head that can improve the accuracy of attachment to a printer. And
  • the thermal print head provided by the first aspect of the present invention includes a base material made of a semiconductor, a resistor layer that is supported by the base material and has a heat generating portion that generates heat when energized, and is formed on the base material.
  • An electrode layer electrically connected to the resistor layer and an insulating layer are provided, and a position confirmation mark made of the same material as that of the resistor layer supported by the base material is formed.
  • the electrode layer includes a first conductive portion and a second conductive portion that are separated from each other, and the heat generating portion is the first conductive portion in the thickness direction of the base material. And straddling the second conductive portion.
  • the insulating layer has a portion interposed between the electrode layer and the heat generating portion.
  • the insulating layer has a first interposed portion and a second interposed portion, and the first interposed portion is interposed between the first conductive portion and the heat generating portion.
  • the second interposed portion is interposed between the second conductive portion and the heat generating portion.
  • the insulating layer has an intermediate portion sandwiched between the first interposed portion and the second interposed portion in the thickness direction of the base material, and the intermediate portion Is connected to the first interposition part and the second interposition part.
  • the first interposition part has a first opening
  • the heat generating part has a first contact part that directly contacts a part of the first conductive part.
  • the first contact portion is located at a position overlapping the first opening when viewed in the thickness direction of the base material.
  • a part of the first conductive portion is formed in the first opening.
  • a second opening is formed in the second interposition part, and the heat generating part has a second contact part in direct contact with a part of the second conductive part.
  • the second contact portion is located at a position overlapping the second opening in the thickness direction of the base material.
  • a part of the second conductive portion is formed in the second opening.
  • the resistor layer has a first end surface facing a side opposite to a side where the second conductive portion is located, and the insulating layer is connected to the first interposed portion. And the part which covers the said 1st end surface is included.
  • the resistor layer has a second end surface facing a side opposite to a side where the first conductive portion is located, and the insulating layer is connected to the second interposed portion. And the part which covers the said 2nd end surface is included.
  • a heat storage layer interposed between the resistor layer and the position confirmation mark and the substrate is provided.
  • the resistor layer and the position confirmation mark are in direct contact with the heat storage layer.
  • the semiconductor device further includes a protective layer covering the resistor layer, the electrode layer, and the insulating layer, and the position confirmation mark is exposed from the protective layer.
  • the protective layer is opaque.
  • the protective layer is black.
  • the protective layer is made of at least one of SiAlON, SiC, and CSiC.
  • the position confirmation mark has a main scanning direction portion extending in the main scanning direction and a sub scanning direction portion extending in the sub scanning direction.
  • the main scanning direction portion and the sub scanning direction portion intersect each other.
  • the main scanning direction portion and the sub-scanning direction portion intersect each other at the center portion.
  • a test electrode layer conducting to the position confirmation mark is provided.
  • the test electrode layer is made of the same material as the electrode layer.
  • the test electrode layer includes a wiring portion connected to the position confirmation mark and a test pad portion connected to the wiring portion.
  • the wiring section is connected to both ends of the sub-scanning direction section in the sub-scanning direction.
  • the sub-scanning direction portion and the main scanning direction portion are separated from each other.
  • a wiring board, a plurality of wires, and a resin layer covering the wiring board, the plurality of wires, and the protective layer are further provided.
  • a through window is formed in the protective layer, and the electrode layer includes a bonding portion exposed from the through window, and the bonding portion includes the plurality of wires. One of them is bonded.
  • the resin layer is in direct contact with the protective layer.
  • the semiconductor device further includes a drive IC for passing a current through the electrode layer, and the drive IC is mounted on the wiring board.
  • the insulating layer is made of SiO2 or SiAlO2.
  • the resistor layer is made of at least one of polysilicon, TaSiO2, and TiON.
  • the electrode layer is made of at least one of Au, Ag, Cu, Cr, Al—Si, and Ti.
  • the electrode layer includes a barrier metal layer in direct contact with the heat generating portion.
  • the thermal printhead manufacturing method provided by the second aspect of the present invention is the thermal printhead manufacturing method provided by the first aspect of the present invention, wherein the resistor layer and the substrate are formed on the substrate.
  • the step of forming the resistor layer is performed by CVD or sputtering.
  • the resistor layer is made of at least one of polysilicon, TaSiO 2 , and TiON.
  • the step of forming the electrode layer is performed by CVD or sputtering.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
  • FIG. 2 is a partially enlarged plan view (partially omitted) of the thermal print head shown in FIG. 1.
  • FIG. 4 is a partially enlarged plan view of a region IV in FIG. 3. It is a top view which abbreviate
  • FIG. 4 is a partially enlarged sectional view taken along line VI-VI in FIG. 3.
  • FIG. 2 is an enlarged plan view of a principal part (partially omitted in configuration) showing a specific example of the thermal print head shown in FIG. 1.
  • FIG. 2 is an enlarged plan view of a main part showing a position confirmation mark of the thermal print head shown in FIG. 1.
  • FIG. 10 is a cross-sectional view of a main part taken along line XX in FIG. 9. It is sectional drawing which shows 1 process of the manufacturing process of the thermal print head shown in FIG.
  • FIG. 12 is a cross-sectional view showing a step subsequent to FIG. 11.
  • FIG. 13 is a cross-sectional view showing a step subsequent to FIG. 12.
  • FIG. 14 is a cross-sectional view showing a step subsequent to FIG. 13.
  • FIG. 15 is a cross-sectional view showing a step subsequent to FIG. 14.
  • FIG. 16 is a partially enlarged plan view when the step shown in FIG. 15 is performed.
  • FIG. 16 is a cross-sectional view showing a step subsequent to FIG. 15.
  • FIG. 18 is a cross-sectional view showing a step subsequent to FIG. 17. It is a partial enlarged plan view when the process shown in FIG. 18 is performed.
  • FIG. 19 is a cross-sectional view showing a step subsequent to FIG. 18. It is a partial enlarged plan view when the process shown in FIG. 20 is performed.
  • FIG. 21 is a cross-sectional view showing a step subsequent to FIG. 20. It is a partial enlarged plan view when the process shown in FIG. 22 is performed.
  • FIG. 24 is a partially enlarged plan view showing one process following FIG. 23.
  • FIG. 25 is a cross-sectional view showing a step subsequent to FIG. 24.
  • FIG. 26 is a cross-sectional view showing a step subsequent to FIG. 25.
  • (A)-(d) is an enlarged plan view of a main part showing a modification of the position confirmation mark. It is a principal part enlarged plan view which shows the thermal print head of 2nd Embodiment of this invention.
  • FIG. 29 is an essential part enlarged cross-sectional view along the line XXIX-XXIX in FIG. 28. It is a principal part enlarged plan view which shows the thermal print head of 3rd Embodiment of this invention.
  • FIG. 1 is a plan view of the thermal print head according to the first embodiment of the present invention.
  • FIG. 2 is a sectional view taken along line II-II in FIG.
  • the X direction is the sub-scanning direction
  • the Y direction is the main scanning direction.
  • the thermal print head 101 shown in these drawings includes a base material 11, a wiring board 12, a heat sink 13, a heat storage layer 2, an electrode layer 3, a resistor layer 4, a position confirmation mark 45, and an insulating layer. 5, a protective layer 6 (not shown in FIG. 1), a drive IC 7, a plurality of wires 81, a sealing resin 82, and a connector 83.
  • the thermal print head 101 is incorporated in a printer that performs printing on the print medium 801. Examples of such a print medium 801 include thermal paper for creating a barcode sheet or a receipt.
  • the heat sink 13 is made of a metal such as Al.
  • a base material 11 and a wiring board 12 are attached to the heat sink 13.
  • the substrate 11 has a plate shape.
  • the base material 11 is made of a semiconductor material.
  • the semiconductor material constituting the substrate 11 include Si, SiC, AlN, GaP, GaAs, InP, and GaN.
  • Si is mentioned as a material of the base material 11 preferable for the configuration described below.
  • the thickness of the substrate 11 is, for example, 0.625 to 0.720 mm.
  • the base material 11 has a flat plate shape extending in the direction Y.
  • the width of the base material 11 (the dimension in the direction X of the base material 11) is, for example, 3 to 20 mm.
  • the dimension in the direction Y of the base material 11 is, for example, 10 to 300 mm.
  • FIG. 3 is a partially enlarged plan view (partially omitted) schematically showing the thermal print head 101 shown in FIG. 6 is a partially enlarged cross-sectional view taken along the line VI-VI in FIG.
  • FIG. 7 is a partially enlarged plan view of the main part showing the shape of the components of the thermal print head 101 more faithfully.
  • the protective layer 6 and the sealing resin 82 are omitted.
  • the insulating layer 5, the protective layer 6, and the sealing resin 82 are omitted.
  • the substrate 11 has a substrate surface 111.
  • the substrate surface 111 has a planar shape extending in the direction X and the direction Y.
  • the substrate surface 111 extends in the longitudinal direction along the direction Y.
  • the base material surface 111 faces one side in the thickness direction Z of the base material 11 (hereinafter referred to as a direction Za, upward in FIG. 6). That is, the substrate surface 111 is a surface facing the side where the resistor layer 4 is located.
  • the heat storage layer 2 is formed on the base material 11.
  • the heat storage layer 2 covers the entire substrate surface 111 of the substrate 11.
  • the heat storage layer 2 is for storing heat generated in the heat generating portion 41 (described later).
  • the thickness of the heat storage layer 2 is, for example, 3 ⁇ m or more.
  • the heat storage layer 2 has a heat storage layer surface 21.
  • the heat storage layer surface 21 faces the direction Za. That is, the heat storage layer surface 21 is a surface facing the side where the resistor layer 4 is located. In this embodiment, the heat storage layer surface 21 is flat throughout. If the heat storage layer surface 21 is flat, the resistor layer 4 and the insulating layer 5 are easily formed by a semiconductor process.
  • the heat storage layer 2 includes a first layer 26 and a second layer 27.
  • the first layer 26 is located between the second layer 27 and the base material 11.
  • the first layer 26 is a layer made of a material obtained by oxidizing a semiconductor material constituting the base material 11.
  • the semiconductor material constituting the substrate 11 is Si
  • the first layer 26 is a layer made of SiO 2 .
  • the second layer 27 is a layer made of an insulating material.
  • the material which comprises the 2nd layer 27 is not specifically limited, In this embodiment, it consists of the same material as the material which comprises the 1st layer 26.
  • the heat storage layer 2 may have a single-layer structure instead of a two-layer structure.
  • the electrode layer 3 in FIGS. 3 and 7 is hatched for convenience of understanding.
  • the electrode layer 3 is laminated on the heat storage layer 2.
  • the electrode layer 3 is laminated on the resistor layer 4.
  • the resistor layer 4 is interposed between the electrode layer 3 and the heat storage layer 2.
  • the electrode layer 3 is electrically connected to the resistor layer 4.
  • the electrode layer 3 constitutes a path for energizing the resistor layer 4.
  • Examples of the material constituting the electrode layer 3 include Au, Ag, Cu, Cr, Al—Si, and Ti.
  • the electrode layer 3 may be interposed between the heat storage layer 2 and the resistor layer 4.
  • FIG. 4 is a partially enlarged plan view of region IV in FIG.
  • FIG. 5 is a plan view showing the electrode layer 3 omitted from FIG. 6 corresponds to a cross-sectional view taken along the line VI-VI in FIG.
  • the electrode layer 3 includes a first conductive portion 31 and a second conductive portion 32.
  • the first conductive portion 31 and the second conductive portion 32 are separated from each other.
  • the distance between the first conductive portion 31 and the second conductive portion 32 is, for example, 105 ⁇ m.
  • the electrode layer 3 includes a plurality of individual electrodes 33 (six are shown in the figure), one common electrode 35, and a plurality of relay electrodes 37 ( 6 are shown in the figure). More specifically, it is as follows.
  • Each individual electrode 33 includes an individual electrode strip portion 331, a bent portion 333, a direct portion 334, a skew portion 335, and a bonding portion 336.
  • each individual electrode strip 331 constitutes the first conductive portion 31 in the electrode layer 3 and has a strip shape extending along the direction X.
  • Each individual electrode strip 331 is stacked on the resistor layer 4.
  • the bent portion 333 is connected to the individual electrode strip portion 331 and is inclined with respect to both the direction Y and the direction X.
  • the straight portion 334 extends straight in parallel with the direction X.
  • the skew portion 335 extends in a direction inclined with respect to both the direction Y and the direction X.
  • the bonding part 336 is a part to which the wire 81 is bonded.
  • the width of the individual electrode strip portion 331, the bent portion 333, the direct portion 334, and the skew portion 335 is, for example, about 47.5 ⁇ m, and the width of the bonding portion 336 is, for example, about 80 ⁇ m.
  • the common electrode 35 is a portion that is electrically reverse in polarity with respect to the plurality of individual electrodes 33 when the printer in which the thermal print head 101 is incorporated is used.
  • the common electrode 35 includes a plurality of common electrode strip portions 351, a plurality of branch portions 353, a plurality of orthogonal portions 354, a plurality of oblique portions 355, a plurality of extending portions 356, and a basic portion 357.
  • Have Each common electrode strip 351 has a strip shape extending in the direction X. As shown in FIGS. 4 and 6, in each common electrode 35, the plurality of common electrode strips 351 form the first conductive portion 31 in the electrode layer 3, are separated from each other in the direction Y, and Conducted.
  • Each common electrode strip 351 is stacked on the resistor layer 4. Each common electrode strip 351 is separated from the individual electrode strip 331 in the direction Y. In this embodiment, two common electrode strips 351 adjacent to each other are sandwiched between two individual electrode strips 331. The plurality of common electrode strips 351 and the plurality of individual electrode strips 331 are arranged along the direction Y.
  • the branch part 353 is a part that connects the two common electrode strips 351 and one orthogonal part 354, and has a Y-shape.
  • the straight portion 354 extends straight in parallel with the direction X.
  • the skew portion 355 extends in a direction inclined with respect to both the direction Y and the direction X.
  • the extension portion 356 is connected to the skew portion 355 and extends along the direction X.
  • the trunk portion 357 has a strip shape extending in the direction Y, and a plurality of extending portions 356 are connected.
  • the widths of the common electrode strip portion 351, the direct portion 354, the oblique portion 355, and the extending portion 356 are, for example, about 47.5 ⁇ m.
  • Each of the plurality of relay electrodes 37 is electrically interposed between one of the plurality of individual electrodes 33 and the common electrode 35.
  • Each relay electrode 37 has two relay electrode strips 371 and a connecting part 373.
  • each relay electrode strip 371 constitutes the second conductive portion 32 in the electrode layer 3 and has a strip shape extending in the direction X.
  • the second conductive portion 32 and the first conductive portion 31 in the electrode layer 3 are separated from each other, and are separated from each other in the direction X in the present embodiment.
  • the plurality of relay electrode strips 371 are separated from each other in the direction Y.
  • Each relay electrode strip 371 is stacked on the resistor layer 4.
  • the plurality of relay electrode strips 371 are arranged on the resistor layer 4 on the side opposite to the plurality of strips 331 and 351 in the direction X.
  • One of the two relay electrode strips 371 in each relay electrode 37 is separated from one of the plurality of common electrode strips 351 in the direction X.
  • the other of the two relay electrode strips 371 in each relay electrode 37 is separated from one of the plurality of individual electrode strips 331 in the direction X.
  • Each of the plurality of connecting portions 373 extends along the direction Y.
  • Each connecting portion 373 is connected to two relay electrode strips 371 in each relay electrode 37. As a result, the two relay electrode strips 371 in each relay electrode 37 are electrically connected to each other.
  • the electrode layer 3 does not necessarily include the relay electrode 37, and may include, for example, a plurality of individual electrodes and a common electrode adjacent to these individual electrodes.
  • the resistor layer 4 shown in FIGS. 2 to 7 is formed on the base material 11.
  • the resistor layer 4 is formed directly on the heat storage layer 2.
  • the resistor layer 4 has a plurality of rectangular portions.
  • the resistor layer 4 generates heat at the portion where the current from the electrode layer 3 flows. Print dots are formed by generating heat in this way.
  • the resistor layer 4 is made of a material having a higher resistivity than the material constituting the electrode layer 3. Examples of the material constituting the resistor layer 4 include polysilicon, TaSiO 2 , and TiON.
  • the resistor layer 4 is doped with ions (for example, boron) in order to adjust the resistance value.
  • the thickness of the resistor layer 4 is, for example, 0.2 ⁇ m to 1 ⁇ m.
  • the resistor layer 4 has a first end face 416 and a second end face 417.
  • the first end surface 416 faces the side opposite to the side where the second conductive portion 32 (relay electrode strip portion 371) is located (that is, the right direction in FIG. 6).
  • the second end face 417 faces the side opposite to the side where the first conductive portion 31 (the individual electrode strip portion 331 or the common electrode strip portion 351) is located (that is, the left direction in FIG. 6).
  • the resistor layer 4 includes a heat generating portion 41 that generates heat when the thermal print head 101 is used. As shown in FIGS. 4 and 5, the heat generating portion 41 straddles the first conductive portion 31 and the second conductive portion 32 in the thickness direction of the base material 11. Each heat generating part 41 is laminated on the heat storage layer 2.
  • the heat generating part 41 includes a first contact part 411 and a second contact part 412.
  • the first contact portion 411 is in contact with the first conductive portion 31 in the electrode layer 3.
  • the second contact portion 412 is in contact with the second conductive portion 32 in the electrode layer 3.
  • the insulating layer 5 has a portion interposed between the heat generating portion 41 and the electrode layer 3.
  • Examples of the material constituting the insulating layer 5 include SiO 2 and SiAlO 2 .
  • the insulating layer 5 includes a first interposition part 51, a second interposition part 52, and an intermediate part 53.
  • the first interposition part 51 is a part interposed between the first conductive part 31 and the heat generating part 41.
  • the second interposed part 52 is interposed between the second conductive part 32 and the heat generating part 41.
  • the intermediate portion 53 is sandwiched between the first interposed portion 51 and the second interposed portion 52 in the thickness direction Z view of the base material 11.
  • the intermediate part 53 is connected to the first interposition part 51 and the second interposition part 52.
  • first openings 511 are formed in the first interposition part 51.
  • 4 and 5 show an example in which the first opening 511 has a circular shape, the shape of the first opening 511 is not limited to a circular shape.
  • the first opening 511 may be rectangular.
  • 4 and 5 show an example in which a plurality of first openings 511 are formed in the first interposition part 51, the number of the first openings 511 formed in the first interposition part 51 is one. It may be.
  • the first contact portion 411 in the heat generating portion 41 described above is located at a position overlapping with the first opening 511.
  • a part of the first conductive portion 31 is further formed in the first opening 511.
  • At least one or more second openings 521 are formed in the second interposition part 52.
  • 4 and 5 show an example in which the second opening 521 has a circular shape, the shape of the second opening 521 is not limited to a circular shape.
  • the second opening 521 may be rectangular.
  • 4 and 5 show an example in which a plurality of second openings 521 are formed in the second interposition part 52, the number of the second openings 521 formed in the second interposition part 52 is one. It may be.
  • the second contact portion 412 in the heat generating portion 41 described above is located at a position overlapping the second opening 521.
  • a part of the second conductive portion 32 is further formed in the second opening 521.
  • the insulating layer 5 includes portions 581 and 582.
  • the part 581 is a part connected to the first interposition part 51 and covering the first end face 416.
  • the part 582 is a part that is connected to the second interposition part 52 and covers the second end face 417.
  • the portions 581 and 582 are in direct contact with the heat storage layer 2. That is, the heat storage layer 2 has a portion that is in direct contact with the insulating layer 5.
  • the insulating layer 5 may not include the portions 581 and 582.
  • the protective layer 6 shown in FIGS. 2 and 6 covers the electrode layer 3, the resistor layer 4, and the insulating layer 5, and protects the electrode layer 3, the resistor layer 4, and the insulating layer 5. is there.
  • the protective layer 6 is made of an insulating material. Examples of the insulating material constituting the protective layer 6 include SiAlON, SiC, and CSiC.
  • the protective layer 6 is opaque and is typically black.
  • the base protective layer 60 is interposed between the protective layer 6 and the electrode layer 3, the resistor layer 4, the insulating layer 5, and the base material 11.
  • the base protective layer 60 is formed over almost the entire area of the substrate 11 in plan view.
  • the base protective layer 60 is a transparent layer made of glass or the like, for example.
  • openings are appropriately provided in the base protective layer 60 in places where conduction is to be achieved.
  • the base protective layer 60 is omitted for convenience of understanding, and the description is omitted as appropriate.
  • the dark hatched area indicates the protective layer 6, and the thin hatched area indicates the base protective layer 60.
  • the protective layer 6 exposes the position confirmation mark 45.
  • the base protective layer 60 covers the position confirmation mark 45.
  • the protective layer 6 has a plurality of through windows 61 (one shown in FIG. 2). A bonding portion 336 is exposed from each through window 61.
  • the position confirmation mark 45 is supported by the base 11 and is made of the same material as the resistor layer 4 such as polysilicon. In the present embodiment, the position confirmation mark 45 is formed on the heat storage layer 2 and is in direct contact with the heat storage layer 2. As shown in FIGS. 1 and 8, in this embodiment, two position confirmation marks 45 are provided near both ends of the base material 11 in the Y direction. When the protective layer 6 is opaque such as black, the position confirmation mark 45 is exposed from the protective layer 6. When the protective layer 6 is transparent, the position confirmation mark 45 may be covered with the protective layer 6.
  • the position confirmation mark 45 is used as a mark for specifying the relative position of the thermal print head 101 with respect to the printer when the thermal print head 101 is attached to the printer. For this reason, the position confirmation mark 45 has an appearance capable of producing contrast with respect to the base material 11 or the heat storage layer 2 so that visual observation by the naked eye or image analysis by the imaging unit is possible.
  • FIG. 9 is an enlarged plan view of a main part showing the position confirmation mark 45.
  • FIG. 10 is an enlarged cross-sectional view of a main part taken along line XX in FIG.
  • the position confirmation mark 45 has a main scanning direction portion 451 and a sub scanning direction portion 452.
  • the main scanning direction portion 451 extends in the Y direction, which is the main scanning direction.
  • the sub-scanning direction portion 452 extends in the X direction that is the sub-scanning direction.
  • the main scanning direction portion 451 and the sub scanning direction portion 452 are integrally formed.
  • the main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other. More specifically, the main scanning direction portion 451 and the sub-scanning direction portion 452 intersect at the center portion of each other.
  • the wiring board 12 shown in FIG. 2 is, for example, a printed wiring board.
  • the wiring board 12 has a structure in which a base material layer and a wiring layer (not shown) are laminated.
  • the base material layer is made of, for example, a glass epoxy resin.
  • the wiring layer is made of Cu, for example.
  • the drive IC 7 is mounted on the wiring board 12. As shown in FIG. 3, the drive IC 7 includes a plurality of pads 71.
  • the plurality of pads 71 are formed in, for example, two rows.
  • the plurality of pads 71 may be formed in three rows or four rows.
  • the wires 811 are bonded to the driving IC 7 and bonded to the electrode layer 3. More specifically, each wire 811 is bonded to the pad 71 in the driving IC 7 and bonded to the bonding portion 336. As a result, the driving IC 7 and each individual electrode 33 are electrically connected. As shown in FIG. 3, among the plurality of wires 81, the wires 812 are bonded to the pads 71 in the driving IC 7 and bonded to the wiring layer in the wiring substrate 12. As a result, the drive IC 7 and the connector 83 are electrically connected via the wiring layer.
  • the wire 813 is bonded to the trunk portion 357 of the common electrode 35 and is bonded to the wiring layer of the wiring substrate 12.
  • the common electrode 35 is electrically connected to the wiring layer.
  • the sealing resin 82 covers the drive IC 7, the plurality of wires 81, and the protective layer 6, and protects the drive IC 7 and the plurality of wires 81.
  • the sealing resin 82 is in direct contact with the protective layer 6.
  • the connector 83 is fixed to the wiring board 12. The connector 83 is for supplying power from the outside of the thermal print head 101 to the thermal print head 101 and controlling the drive IC 7.
  • the thermal print head 101 is used in a state incorporated in a printer. As shown in FIG. 2, each heat generating portion 41 of the thermal print head 101 faces the platen roller 802 in the printer. When the printer is used, the platen roller 802 rotates to feed the print medium 801 along the direction X between the platen roller 802 and each heat generating unit 41 at a constant speed. The print medium 801 is pressed against a portion of the protective layer 6 that covers each heat generating portion 41 by the platen roller 802. On the other hand, a potential is selectively applied to each individual electrode 33 shown in FIG. Thereby, a voltage is applied between the common electrode 35 and each of the plurality of individual electrodes 33. Then, current selectively flows through the plurality of heat generating portions 41 to generate heat.
  • each heat generating part 41 is transmitted to the print medium 801 through the protective layer 6. Then, a plurality of dots are printed in the first line region extending linearly in the direction Y on the print medium 801. Further, the heat generated in each heat generating part 41 is also transmitted to the heat storage layer 2 and stored in the heat storage layer 2.
  • the printing medium 801 is continuously fed along the direction X at a constant speed by the rotation of the platen roller 802. Then, similarly to the above-described printing on the first line area, printing is performed on the second line area adjacent to the first line area that extends linearly in the direction Y on the print medium 801.
  • the heat stored in the heat storage layer 2 during printing on the first line area is transmitted to the print medium 801. In this way, printing on the second line area is performed.
  • printing on the print medium 801 is performed by printing a plurality of dots for each line region extending linearly in the direction Y on the print medium 801.
  • thermal print head 101 Next, an example of a method for manufacturing the thermal print head 101 will be briefly described. In order to manufacture the thermal print head 101 in this embodiment, a semiconductor process is used.
  • a semiconductor substrate 19 is prepared.
  • the semiconductor substrate 19 is made of Si.
  • the surface of the semiconductor substrate 19 is thermally oxidized.
  • the base material 11 and the first layer 26 laminated on the base material 11 are formed.
  • the first layer 26 is made of SiO 2 .
  • a second layer 27 is formed on the first layer 26 by CVD or sputtering.
  • stacked on the base material 11 is formed.
  • illustration is omitted, an SiO 2 layer is also formed on the back surface of the substrate 11.
  • a resistor layer 4 ' is formed.
  • the resistor layer 4 ' is formed by, for example, CVD or sputtering.
  • the resistor layer 4 ′ is formed on the entire surface of the substrate 11.
  • the resistor layer 4 ′′ is formed by etching the resistor layer 4 ′. Etching of the resistor layer 4 'is performed by photolithography.
  • the resistor layer 4 ′′ has a strip-shaped portion extending in a strip shape along one direction and a cross shape disposed at positions corresponding to the vicinity of both ends of the base material 11 in the Y direction. And a portion.
  • the belt-like portion is a portion that becomes the resistor layer 4 including the plurality of heat generating portions 41.
  • the cross-shaped portion is a portion that becomes the position confirmation mark 45.
  • ions are implanted into the resistor layer 4 ′′ so that the resistor layer 4 has a desired resistance value (not shown). This ion implantation is performed not only on the belt-shaped portion but also on the cross-shaped portion.
  • an insulating layer 5 ' is formed.
  • the insulating layer 5 ' is formed by, for example, CVD or sputtering.
  • the insulating layer 5 ' is etched to form the insulating layer 5 described above. Through the step of etching the insulating layer 5 ′, the first opening 511 and the second opening 521 are formed.
  • an electrode layer 3 ' is formed.
  • the electrode layer 3 ' is formed by sputtering or CVD, for example.
  • the electrode layer 3 ' is etched to form the electrode layer 3 having the above-described shape. Etching of the electrode layer 3 'is performed by photolithography.
  • the resistor layer 4 '' is etched to form the resistor layer 4 having a plurality of rectangular portions. This is to prevent a current from flowing in the lateral direction of FIG. 24 in the resistor layer 4 when the thermal print head 101 is used.
  • the cross-shaped portion of the resistor material layer 4 ′′ is not processed.
  • the resistor layer 4 ′ is etched once without forming the strip-shaped resistor layer 4 ′′, so that the resistor layer 4 having a plurality of rectangular portions is formed. It may be formed.
  • the cross-shaped portion is not formed, but in the etching for obtaining the state shown in FIGS.
  • the mark 45 may be formed.
  • a protective layer 6 ' is formed.
  • the protective layer 6 ' is formed by, for example, CVD.
  • the plurality of through windows 61 are formed by etching the protective layer 6 '. Etching of the protective layer 6 'is performed by photolithography.
  • the base protective layer 60 described above is formed prior to the formation of the protective layer 6, the base protective layer 60 described above is formed.
  • the thickness of the base material 11 is reduced by polishing the back surface of the base material 11.
  • the product after dicing and the wiring board 12 are arranged on the heat radiation plate 13.
  • the driving IC 7 shown in FIG. 2 is mounted on the wiring board 12, and the wire 81 is bonded to a desired location to form the sealing resin 82.
  • the thermal print head 101 shown in FIG. 2 is manufactured through these steps.
  • the position confirmation mark 45 is formed on the base material 11.
  • the position confirmation mark 45 is made of the same material as the resistor layer 4 and is formed together with the resistor layer 4. For this reason, the positional relationship between the position confirmation mark 45 and the heat generating portion 41 of the resistor layer 4 is easily specified accurately.
  • the thermal print head 101 is attached to the printer, the relative position between the printer and the heat generating portion 41 of the resistor layer 4 can be set more accurately by using the position confirmation mark 45 as a reference for alignment. . Therefore, the mounting accuracy of the thermal print head 101 with respect to the printer can be improved.
  • the relative position between the resistor layer 4 and the position confirmation mark 45 can be set more accurately.
  • the protective layer 6 is made of at least one of SiAlON, SiC, and CSiC, the resistor layer 4 and the like can be more appropriately protected.
  • the hard protective layer 6 suitable for protecting the resistor layer 4 may be opaque or even black. In such a case, by exposing the position confirmation mark 45 from the protective layer 6, the position confirmation mark 45 can be clearly shown on the appearance of the thermal print head 101.
  • the position confirmation mark 45 has the main scanning direction part 451 and the sub-scanning direction part 452, each of the X direction position and the Y direction position of the position confirmation mark 45 can be grasped more accurately. By intersecting the main scanning direction portion 451 and the sub scanning direction portion 452, this intersection can be used as a positioning reference point.
  • the thermal print head 101 includes the insulating layer 5.
  • the insulating layer 5 has a portion interposed between the electrode layer 3 and the heat generating portion 41. According to such a structure, the area
  • the insulating layer 5 has a first interposition part 51 and a second interposition part 52.
  • the first interposition part 51 is interposed between the first conductive part 31 and the heat generating part 41. According to such a structure, it can suppress that the 1st electroconductive part 31 and the heat generating part 41 eutectic.
  • the second interposition part 52 is interposed between the second conductive part 32 and the heat generating part 41. According to such a structure, it can suppress that the 2nd electroconductive part 32 and the heat generating part 41 eutectic.
  • the electrode layer 3 and the heat generating portion 41 are eutectic.
  • the area can be reduced. Thereby, the malfunction that the resistance value of the thermal print head 101 changes at the time of use of the thermal print head 101 can be suppressed.
  • the heat generated in the heat generating portion 41 in the resistor layer 4 may escape to the electrode layer 3. is there.
  • the heat that has escaped to the electrode layer 3 does not contribute to heat transfer to the print medium 801.
  • the resistor layer 4 is interposed between the electrode layer 3 and the heat storage layer 2. According to such a configuration, even if the heat generated in the heat generating portion 41 in the resistor layer 4 is transferred to the electrode layer 3, the heat transferred to the electrode layer 3 can contribute to the heat transfer to the print medium 801. Therefore, the heat generated in the heat generating part 41 can be transmitted to the print medium 801 more efficiently. That is, the portion (protective layer 6) in contact with the print medium 801 in the thermal print head 101 can be heated to a higher temperature faster. Thereby, high-speed printing on the print medium 801 becomes possible.
  • the base material 11 is made of Si. Since Si has a high thermal conductivity, heat generated in the heat generating portion 41 can be transferred to the outside of the base material 11 (in the present embodiment, the heat radiating plate 13) more quickly. Therefore, the temperature of the heat generating part 41 that has become high can be reduced more quickly. This is suitable for speeding up printing on the print medium 801.
  • the through window 61 in the protective layer 6 is formed by etching the protective layer 6 '. Then, since the through window 61 can be formed at a desired site in the protective layer 6, a portion of the electrode layer 3 that is not covered with the protective layer 6 is separated from a resin layer (solder resist) different from the sealing resin 82. Layer). The fact that it is not necessary to form another resin layer (solder resist layer) is suitable for improving the manufacturing efficiency of the thermal print head 101.
  • FIG. 27 shows a modification of the position confirmation mark 45.
  • the position confirmation mark 45 has a main scanning direction portion 451 and a sub scanning direction portion 452, and the main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other. is doing. However, in this example, the central portion of the main scanning direction portion 451 and one end portion of the sub scanning direction portion 452 intersect each other.
  • the position confirmation mark 45 has two main scanning direction portions 451 and one sub scanning direction portion 452, and the two main scanning direction portions 451 and the sub scanning direction.
  • the portion 452 intersects with each other.
  • the center portion of the two main scanning direction portions 451 and the both end portions of the sub scanning direction portion 452 intersect each other.
  • the position confirmation mark 45 has two main scanning direction portions 451 and two sub scanning direction portions 452, and includes two main scanning direction portions 451 and two sub scanning direction portions 451.
  • the scanning direction portion 452 intersects with each other.
  • both end portions of the two main scanning direction portions 451 intersect with both end portions of the sub-scanning direction portion 452.
  • the position confirmation mark 45 of this example has a rectangular shape.
  • the position confirmation mark 45 has one main scanning direction portion 451 and two oblique sides, and has a triangular shape as a whole.
  • the position confirmation mark 45 is not particularly limited in shape as long as it can serve as a reference for relative positioning in mounting the thermal print head 101 to the printer. .
  • the main scanning direction portion 451 positioning in the sub scanning direction can be performed more accurately, and by having the sub scanning direction portion 452, positioning in the main scanning direction can be performed accurately.
  • the configuration is not limited to the configuration having the main scanning direction portion 451 and the sub scanning direction portion 452.
  • FIG. 28 is an enlarged plan view of a main part of the thermal print head according to the second embodiment of the present invention.
  • FIG. 29 is an enlarged cross-sectional view of a main part along the line XXIX-XIXX in FIG.
  • the thermal print head 102 shown in the figure further includes a test electrode layer 38.
  • the test electrode layer 38 is electrically connected to the position confirmation mark 45.
  • the test electrode layer 38 is made of the same material as the electrode layer 3, and is formed together with the electrode layer 3 in the above-described manufacturing method.
  • the test electrode layer 38 has two wiring portions 381 and two test pads 382.
  • the wiring portion 381 is a portion connected to the position confirmation mark 45, and has a strip shape in this embodiment.
  • the two wiring portions 381 are connected to both ends in the X direction of the sub-scanning direction portion 452 of the position confirmation mark 45.
  • the test pad 382 is connected to the end of the wiring portion 381 opposite to the end connected to the position confirmation mark 45.
  • the test pad 382 is a portion wider than the wiring portion 381.
  • the sub-scanning direction part 452 of the position confirmation mark 45 and the wiring part 381 of the test electrode layer 38 overlap each other, and the test part 55 is interposed therebetween.
  • the test part 55 is made of the same material as the insulating layer 5 described above, and is manufactured together with the insulating layer 5.
  • the test portion 55 is provided to accurately define which position of the sub-scanning direction portion 452 of the position confirmation mark 45 the wiring portion 381 of the test electrode layer 38 contacts with the position confirmation mark 45. In FIG. 28, the test unit 55 is omitted.
  • the test unit 55 has a plurality of openings 551.
  • the plurality of openings 551 are provided in a portion of the test portion 55 that overlaps the sub-scanning direction portion 452 of the position confirmation mark 45, and are arranged separately at both ends of the sub-scanning direction portion 452.
  • the opening 551 is filled with a part of the wiring portion 381 of the wiring portion 381. Thereby, the wiring portion 381 of the test electrode layer 38 is in contact with the sub-scanning direction portion 452 of the position confirmation mark 45 through the opening 551 of the test portion 55.
  • the position confirmation mark 45 it is possible to diagnose whether the resistance value of the resistor layer 4 is appropriate. For example, two resistance measurement probes (not shown) are brought into contact with two test pads 382, and a current is passed from these probes to the position confirmation mark 45. Thereby, the resistance value of the position confirmation mark 45 can be measured. Since the position confirmation mark 45 is formed together with the resistor layer 4, the material and thickness thereof are the same as those of the resistor layer 4. Further, the position confirmation mark 45 is patterned by etching using photolithography in the same manner as the resistor layer 4. For this reason, the planar view dimension of the position confirmation mark 45 is known. For this reason, it is possible to diagnose whether the measured resistance value of the position confirmation mark 45 is an appropriate value for the resistance value assumed from the material, thickness, and planar size of the position confirmation mark 45.
  • FIG. 30 is an enlarged plan view of the main part of the thermal print head according to the third embodiment of the present invention.
  • the thermal print head 103 shown in the figure has a position confirmation mark 45 and a test electrode layer 38 in the same manner as the thermal print head 102.
  • the main scanning direction portion 451 and the sub-scanning direction portion 452 of the position confirmation mark 45 are separated from each other and are disposed with a gap therebetween.
  • the main scanning direction portion 451 of the present embodiment is configured by two regions separated in the y direction.
  • the sub-scanning direction part 452 is composed of one area. According to the definition that the main scanning direction portion 451 is constituted by two regions, it can be said that the main scanning direction portion 451 and the sub scanning direction portion 452 also intersect each other in this embodiment. Further, it can be said that the main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other at the center portion.
  • the resistance value can be diagnosed using the position confirmation mark 45.
  • only the sub-scanning direction part 452 of the position confirmation mark 45 is electrically connected to the test electrode layer 38.
  • the sub-scanning direction portion 452 has a strip shape extending in the X direction. Therefore, the portion of the position confirmation mark 45 that is energized through the test electrode layer 38 has a simpler shape. This makes it easier to assume the resistance value of the position confirmation mark 45 (sub-scanning direction portion 452).
  • the shape of the sub-scanning direction portion 452 is similar to the shape of the heat generating portion 41 of the resistor layer 4. Therefore, the resistance value of the heat generating portion 41 can be estimated more accurately by measuring the resistance value of the position confirmation mark 45 (sub-scanning direction portion 452).
  • the present invention is not limited to the embodiment described above.
  • the specific configuration of each part of the present invention can be changed in various ways.

Abstract

This thermal print head 101 is provided with a base material 11 comprising a semiconductor, a resistor layer 4 supported on the base material 11 and having a heat-generating part 41 for generating heat by electrical conduction, an electrode layer 3 formed on the base material 11 and having electrical continuity with the resistor layer 4, and an insulating layer 5. A position confirmation mark 45 supported on the base material 11 is also formed, the position confirmation mark 45 comprising the same material as the resistor layer 4. The precision of attaching to the printer can thereby be improved.

Description

サーマルプリントヘッド、および、サーマルプリントヘッドの製造方法Thermal print head and method of manufacturing thermal print head
　本発明は、サーマルプリントヘッド、および、サーマルプリントヘッドの製造方法に関する。 The present invention relates to a thermal print head and a method for manufacturing the thermal print head.
　従来から知られているサーマルプリントヘッドは、基板と、グレーズ層と、発熱抵抗体と、電極と、を備える。このようなサーマルプリントヘッドは、たとえば特許文献１に開示されている。同文献に開示のサーマルプリントヘッドにおいて、グレーズ層は基板に形成されている。グレーズ層は、発熱抵抗体にて発生した熱を蓄熱する役割を果たす。発熱抵抗体は、グレーズ層に形成されている。電極は、互いに離間した２つの部分を有する。これらの２つの部分に跨るように、発熱抵抗体には、発熱部が形成されている。 A conventionally known thermal print head includes a substrate, a glaze layer, a heating resistor, and an electrode. Such a thermal print head is disclosed in Patent Document 1, for example. In the thermal print head disclosed in this document, the glaze layer is formed on the substrate. The glaze layer plays a role of storing heat generated by the heating resistor. The heating resistor is formed in the glaze layer. The electrode has two parts spaced apart from each other. A heating part is formed in the heating resistor so as to straddle these two parts.
　サーマルプリントヘッドは、プリンタに組み込まれるものであり、プリンタの印字品質を決定づける基幹モジュールである。このため、サーマルプリントヘッドのプリンタに対する取り付け精度が重要である。 The thermal print head is built into the printer and is a basic module that determines the print quality of the printer. For this reason, the mounting accuracy of the thermal print head to the printer is important.
特開２０１２－５１３１９号公報JP 2012-51319 A
　本発明は、上記した事情のもとで考え出されたものであって、プリンタへの取り付け精度を向上させることが可能なサーマルプリントヘッドおよびサーマルプリントヘッドの製造方法を提供することをその主たる課題とする。 SUMMARY OF THE INVENTION The present invention has been conceived under the circumstances described above, and its main problem is to provide a thermal print head and a method for manufacturing a thermal print head that can improve the accuracy of attachment to a printer. And
　本発明の第１の側面によって提供されるサーマルプリントヘッドは、半導体よりなる基材と、前記基材に支持され且つ通電によって発熱する発熱部を有する抵抗体層と、前記基材に形成され且つ前記抵抗体層と導通する電極層と、絶縁層と、を備え、前記基材に支持され且つ前記抵抗体層と同じ材質よりなる位置確認マークが形成されている。 The thermal print head provided by the first aspect of the present invention includes a base material made of a semiconductor, a resistor layer that is supported by the base material and has a heat generating portion that generates heat when energized, and is formed on the base material. An electrode layer electrically connected to the resistor layer and an insulating layer are provided, and a position confirmation mark made of the same material as that of the resistor layer supported by the base material is formed.
　本発明の好ましい実施の形態においては、前記電極層は、互いに離間する第１導電部および第２導電部を含み、前記発熱部は、前記基材の厚さ方向視において、前記第１導電部および前記第２導電部に跨っている。 In a preferred embodiment of the present invention, the electrode layer includes a first conductive portion and a second conductive portion that are separated from each other, and the heat generating portion is the first conductive portion in the thickness direction of the base material. And straddling the second conductive portion.
　本発明の好ましい実施の形態においては、前記絶縁層は、前記電極層および前記発熱部の間に介在している部分を有する。 In a preferred embodiment of the present invention, the insulating layer has a portion interposed between the electrode layer and the heat generating portion.
　本発明の好ましい実施の形態においては、前記絶縁層は、第１介在部と第２介在部とを有し、前記第１介在部は、前記第１導電部および前記発熱部の間に介在しており、前記第２介在部は、前記第２導電部および前記発熱部の間に介在している。 In a preferred embodiment of the present invention, the insulating layer has a first interposed portion and a second interposed portion, and the first interposed portion is interposed between the first conductive portion and the heat generating portion. The second interposed portion is interposed between the second conductive portion and the heat generating portion.
　本発明の好ましい実施の形態においては、前記絶縁層は、前記基材の厚さ方向視において、前記第１介在部と前記第２介在部とに挟まれた中間部を有し、前記中間部は、前記第１介在部および前記第２介在部につながっている。 In a preferred embodiment of the present invention, the insulating layer has an intermediate portion sandwiched between the first interposed portion and the second interposed portion in the thickness direction of the base material, and the intermediate portion Is connected to the first interposition part and the second interposition part.
　本発明の好ましい実施の形態においては、前記第１介在部には、第１開口が形成されており、前記発熱部は、前記第１導電部の一部に直接接する第１当接部を有し、前記第１当接部は、前記基材の厚さ方向視において、前記第１開口と重なる位置に位置している。 In a preferred embodiment of the present invention, the first interposition part has a first opening, and the heat generating part has a first contact part that directly contacts a part of the first conductive part. The first contact portion is located at a position overlapping the first opening when viewed in the thickness direction of the base material.
　本発明の好ましい実施の形態においては、前記第１導電部の一部は、前記第１開口内に形成されている。 In a preferred embodiment of the present invention, a part of the first conductive portion is formed in the first opening.
　本発明の好ましい実施の形態においては、前記第２介在部には、第２開口が形成されており、前記発熱部は、前記第２導電部の一部に直接接する第２当接部を有し、前記第２当接部は、前記基材の厚さ方向視において、前記第２開口と重なる位置に位置している。 In a preferred embodiment of the present invention, a second opening is formed in the second interposition part, and the heat generating part has a second contact part in direct contact with a part of the second conductive part. The second contact portion is located at a position overlapping the second opening in the thickness direction of the base material.
　本発明の好ましい実施の形態においては、前記第２導電部の一部は、前記第２開口内に形成されている。 In a preferred embodiment of the present invention, a part of the second conductive portion is formed in the second opening.
　本発明の好ましい実施の形態においては、前記抵抗体層は、前記第２導電部の位置する側とは反対側を向く第１端面を有し、前記絶縁層は、前記第１介在部につながり且つ前記第１端面を覆う部分を含む。 In a preferred embodiment of the present invention, the resistor layer has a first end surface facing a side opposite to a side where the second conductive portion is located, and the insulating layer is connected to the first interposed portion. And the part which covers the said 1st end surface is included.
　本発明の好ましい実施の形態においては、前記抵抗体層は、前記第１導電部の位置する側とは反対側を向く第２端面を有し、前記絶縁層は、前記第２介在部につながり且つ前記第２端面を覆う部分を含む。 In a preferred embodiment of the present invention, the resistor layer has a second end surface facing a side opposite to a side where the first conductive portion is located, and the insulating layer is connected to the second interposed portion. And the part which covers the said 2nd end surface is included.
　本発明の好ましい実施の形態においては、前記抵抗体層および前記位置確認マークと前記基板との間に介在する蓄熱層を備える。 In a preferred embodiment of the present invention, a heat storage layer interposed between the resistor layer and the position confirmation mark and the substrate is provided.
　本発明の好ましい実施の形態においては、前記抵抗体層および前記位置確認マークは、前記蓄熱層に直接接している。 In a preferred embodiment of the present invention, the resistor layer and the position confirmation mark are in direct contact with the heat storage layer.
　本発明の好ましい実施の形態においては、前記抵抗体層、前記電極層および前記絶縁層を覆う保護層を更に備えており、前記位置確認マークは、前記保護層から露出している。 In a preferred embodiment of the present invention, the semiconductor device further includes a protective layer covering the resistor layer, the electrode layer, and the insulating layer, and the position confirmation mark is exposed from the protective layer.
　本発明の好ましい実施の形態においては、前記保護層は、不透明である。 In a preferred embodiment of the present invention, the protective layer is opaque.
　本発明の好ましい実施の形態においては、前記保護層は、黒色である。 In a preferred embodiment of the present invention, the protective layer is black.
　本発明の好ましい実施の形態においては、前記保護層は、ＳｉＡｌＯＮ、ＳｉＣおよびＣＳｉＣの少なくともいずれかよりなる。 In a preferred embodiment of the present invention, the protective layer is made of at least one of SiAlON, SiC, and CSiC.
　本発明の好ましい実施の形態においては、前記位置確認マークは、主走査方向に延びる主走査方向部と、副走査方向に延びる副走査方向部と、を有する。 In a preferred embodiment of the present invention, the position confirmation mark has a main scanning direction portion extending in the main scanning direction and a sub scanning direction portion extending in the sub scanning direction.
　本発明の好ましい実施の形態においては、前記主走査方向部と前記副走査方向部とは、互いに交差している。 In a preferred embodiment of the present invention, the main scanning direction portion and the sub scanning direction portion intersect each other.
　本発明の好ましい実施の形態においては、前記主走査方向部と前記副走査方向部とは、互いの中央部分において交差している。 In a preferred embodiment of the present invention, the main scanning direction portion and the sub-scanning direction portion intersect each other at the center portion.
　本発明の好ましい実施の形態においては、前記位置確認マークに導通するテスト電極層を備える。 In a preferred embodiment of the present invention, a test electrode layer conducting to the position confirmation mark is provided.
　本発明の好ましい実施の形態においては、前記テスト電極層は、前記電極層と同じ材質よりなる。 In a preferred embodiment of the present invention, the test electrode layer is made of the same material as the electrode layer.
　本発明の好ましい実施の形態においては、前記テスト電極層は、前記位置確認マークに繋がる配線部と、この配線部に繋がるテスト用パッド部と、を含む。 In a preferred embodiment of the present invention, the test electrode layer includes a wiring portion connected to the position confirmation mark and a test pad portion connected to the wiring portion.
　本発明の好ましい実施の形態においては、前記配線部は、前記副走査方向部の副走査方向両端に繋がっている。 In a preferred embodiment of the present invention, the wiring section is connected to both ends of the sub-scanning direction section in the sub-scanning direction.
　本発明の好ましい実施の形態においては、前記副走査方向部と前記主走査方向部とは、互いに離間している。 In a preferred embodiment of the present invention, the sub-scanning direction portion and the main scanning direction portion are separated from each other.
　本発明の好ましい実施の形態においては、配線基板と、複数のワイヤと、前記配線基板、前記複数のワイヤ、および、前記保護層を覆う樹脂層と、を更に備える。 In a preferred embodiment of the present invention, a wiring board, a plurality of wires, and a resin layer covering the wiring board, the plurality of wires, and the protective layer are further provided.
　本発明の好ましい実施の形態においては、前記保護層には、貫通窓が形成されており、前記電極層は、前記貫通窓から露出するボンディング部を含み、前記ボンディング部には、前記複数のワイヤのいずれかがボンディングされている。 In a preferred embodiment of the present invention, a through window is formed in the protective layer, and the electrode layer includes a bonding portion exposed from the through window, and the bonding portion includes the plurality of wires. One of them is bonded.
　本発明の好ましい実施の形態においては、前記樹脂層は、前記保護層に直接接している。 In a preferred embodiment of the present invention, the resin layer is in direct contact with the protective layer.
　本発明の好ましい実施の形態においては、前記電極層に電流を流す駆動ＩＣを更に備え、前記駆動ＩＣは、前記配線基板に搭載されている。 In a preferred embodiment of the present invention, the semiconductor device further includes a drive IC for passing a current through the electrode layer, and the drive IC is mounted on the wiring board.
　本発明の好ましい実施の形態においては、前記絶縁層は、ＳｉＯ2またはＳｉＡｌＯ2よりなる。 In a preferred embodiment of the present invention, the insulating layer is made of SiO2 or SiAlO2.
　本発明の好ましい実施の形態においては、前記抵抗体層は、ポリシリコン、ＴａＳｉＯ2、および、ＴｉＯＮの少なくともいずれかよりなる。 In a preferred embodiment of the present invention, the resistor layer is made of at least one of polysilicon, TaSiO2, and TiON.
　本発明の好ましい実施の形態においては、前記電極層は、Ａｕ、Ａｇ、Ｃｕ、Ｃｒ、Ａｌ－Ｓｉ、および、Ｔｉの少なくともいずれかよりなる。 In a preferred embodiment of the present invention, the electrode layer is made of at least one of Au, Ag, Cu, Cr, Al—Si, and Ti.
　本発明の好ましい実施の形態においては、前記電極層は、前記発熱部に直接接するバリアメタル層を含む。 In a preferred embodiment of the present invention, the electrode layer includes a barrier metal layer in direct contact with the heat generating portion.
　本発明の第２の側面によって提供されるサーマルプリントヘッドの製造方法は、本発明の第１の側面によって提供されるサーマルプリントヘッドの製造方法であって、前記基材に前記抵抗体層と前記位置確認マークとを一括して形成する工程と、前記基材に前記電極層を形成する工程と、を備える。 The thermal printhead manufacturing method provided by the second aspect of the present invention is the thermal printhead manufacturing method provided by the first aspect of the present invention, wherein the resistor layer and the substrate are formed on the substrate. A step of collectively forming a position confirmation mark, and a step of forming the electrode layer on the substrate.
　本発明の好ましい実施の形態においては、前記抵抗体層を形成する工程は、ＣＶＤまたはスパッタにより行う。 In a preferred embodiment of the present invention, the step of forming the resistor layer is performed by CVD or sputtering.
　本発明の好ましい実施の形態においては、前記抵抗体層は、ポリシリコン、ＴａＳｉＯ2、および、ＴｉＯＮの少なくともいずれかよりなる。 In a preferred embodiment of the present invention, the resistor layer is made of at least one of polysilicon, TaSiO 2 , and TiON.
　本発明の好ましい実施の形態においては、前記電極層を形成する工程は、ＣＶＤまたはスパッタにより行う。 In a preferred embodiment of the present invention, the step of forming the electrode layer is performed by CVD or sputtering.
　本発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。 Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
本発明の第１実施形態のサーマルプリントヘッドの平面図である。It is a top view of the thermal print head of a 1st embodiment of the present invention. 図１のＩＩ－ＩＩ線に沿う断面図である。FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 図１に示したサーマルプリントヘッドの部分拡大平面図（一部構成省略）である。FIG. 2 is a partially enlarged plan view (partially omitted) of the thermal print head shown in FIG. 1. 図３の領域ＩＶの部分拡大平面図である。FIG. 4 is a partially enlarged plan view of a region IV in FIG. 3. 図３の領域ＩＶについて電極層を省略して示す平面図である。It is a top view which abbreviate | omits an electrode layer about the area | region IV of FIG. 図３のＶＩ－ＶＩ線に沿う部分拡大断面図である。FIG. 4 is a partially enlarged sectional view taken along line VI-VI in FIG. 3. 図１に示したサーマルプリントヘッドの具体的形態例を示す要部拡大平面図（一部構成省略）である。FIG. 2 is an enlarged plan view of a principal part (partially omitted in configuration) showing a specific example of the thermal print head shown in FIG. 1. 図１に示したサーマルプリントヘッドを示す要部平面図である。It is a principal part top view which shows the thermal print head shown in FIG. 図１に示したサーマルプリントヘッドの位置確認マークを示す要部拡大平面図である。FIG. 2 is an enlarged plan view of a main part showing a position confirmation mark of the thermal print head shown in FIG. 1. 図９のＸ－Ｘ線に沿う要部断面図である。FIG. 10 is a cross-sectional view of a main part taken along line XX in FIG. 9. 図１に示したサーマルプリントヘッドの製造工程の一工程を示す断面図である。It is sectional drawing which shows 1 process of the manufacturing process of the thermal print head shown in FIG. 図１１に続く一工程を示す断面図である。FIG. 12 is a cross-sectional view showing a step subsequent to FIG. 11. 図１２に続く一工程を示す断面図である。FIG. 13 is a cross-sectional view showing a step subsequent to FIG. 12. 図１３に続く一工程を示す断面図である。FIG. 14 is a cross-sectional view showing a step subsequent to FIG. 13. 図１４に続く一工程を示す断面図である。FIG. 15 is a cross-sectional view showing a step subsequent to FIG. 14. 図１５に示す工程を行ったときの部分拡大平面図である。FIG. 16 is a partially enlarged plan view when the step shown in FIG. 15 is performed. 図１５に続く一工程を示す断面図である。FIG. 16 is a cross-sectional view showing a step subsequent to FIG. 15. 図１７に続く一工程を示す断面図である。FIG. 18 is a cross-sectional view showing a step subsequent to FIG. 17. 図１８に示す工程を行ったときの部分拡大平面図である。It is a partial enlarged plan view when the process shown in FIG. 18 is performed. 図１８に続く一工程を示す断面図である。FIG. 19 is a cross-sectional view showing a step subsequent to FIG. 18. 図２０に示す工程を行ったときの部分拡大平面図である。It is a partial enlarged plan view when the process shown in FIG. 20 is performed. 図２０に続く一工程を示す断面図である。FIG. 21 is a cross-sectional view showing a step subsequent to FIG. 20. 図２２に示す工程を行ったときの部分拡大平面図である。It is a partial enlarged plan view when the process shown in FIG. 22 is performed. 図２３に続く一工程を示す部分拡大平面図である。FIG. 24 is a partially enlarged plan view showing one process following FIG. 23. 図２４に続く一工程を示す断面図である。FIG. 25 is a cross-sectional view showing a step subsequent to FIG. 24. 図２５に続く一工程を示す断面図である。FIG. 26 is a cross-sectional view showing a step subsequent to FIG. 25. （ａ）～（ｄ）は、位置確認マークの変形例を示す要部拡大平面図である。(A)-(d) is an enlarged plan view of a main part showing a modification of the position confirmation mark. 本発明の第２実施形態のサーマルプリントヘッドを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the thermal print head of 2nd Embodiment of this invention. 図２８のＸＸＩＸ－ＸＸＩＸ線に沿う要部拡大断面図である。FIG. 29 is an essential part enlarged cross-sectional view along the line XXIX-XXIX in FIG. 28. 本発明の第３実施形態のサーマルプリントヘッドを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the thermal print head of 3rd Embodiment of this invention.
　以下、本発明の実施の形態につき、図面を参照して具体的に説明する。 Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
＜第１実施形態＞
　図１～図２６を用いて、本発明の第１実施形態について説明する。 <First Embodiment>
A first embodiment of the present invention will be described with reference to FIGS.
　図１は、本発明の第１実施形態のサーマルプリントヘッドの平面図である。図２は、図１のＩＩ－ＩＩ線に沿う断面図である。なお、以降の説明において、Ｘ方向は、副走査方向であり、Ｙ方向は、主走査方向である。 FIG. 1 is a plan view of the thermal print head according to the first embodiment of the present invention. FIG. 2 is a sectional view taken along line II-II in FIG. In the following description, the X direction is the sub-scanning direction, and the Y direction is the main scanning direction.
　これらの図に示すサーマルプリントヘッド１０１は、基材１１と、配線基板１２と、放熱板１３と、蓄熱層２と、電極層３と、抵抗体層４と、位置確認マーク４５と、絶縁層５と、保護層６（図１では省略）と、駆動ＩＣ７と、複数のワイヤ８１と、封止樹脂８２と、コネクタ８３とを備える。サーマルプリントヘッド１０１は、印刷媒体８０１に印刷を施すプリンタに組み込まれるものである。このような印刷媒体８０１としては、たとえばバーコードシートやレシートを作成するための感熱紙が挙げられる。 The thermal print head 101 shown in these drawings includes a base material 11, a wiring board 12, a heat sink 13, a heat storage layer 2, an electrode layer 3, a resistor layer 4, a position confirmation mark 45, and an insulating layer. 5, a protective layer 6 (not shown in FIG. 1), a drive IC 7, a plurality of wires 81, a sealing resin 82, and a connector 83. The thermal print head 101 is incorporated in a printer that performs printing on the print medium 801. Examples of such a print medium 801 include thermal paper for creating a barcode sheet or a receipt.
　図２に示す放熱板１３は、基材１１からの熱を放散させるためのものである。放熱板１３は、たとえばＡｌなどの金属よりなる。放熱板１３には基材１１および配線基板１２が取り付けられている。 2 is for radiating the heat from the base material 11. The heat radiating plate 13 shown in FIG. The heat sink 13 is made of a metal such as Al. A base material 11 and a wiring board 12 are attached to the heat sink 13.
　基材１１は板状を呈している。本実施形態においては、基材１１は半導体材料よりなる。基材１１を構成する半導体材料としては、たとえば、Ｓｉ、ＳｉＣ、ＡｌＮ、ＧａＰ、ＧａＡｓ、ＩｎＰ、およびＧａＮが挙げられる。以下に述べる構成に好ましい基材１１の材質としては、Ｓｉが挙げられる。基材１１の厚さはたとえば０．６２５～０．７２０ｍｍである。図１に示すように、基材１１は、方向Ｙに長く延びる平板状である。基材１１の幅（基材１１の方向Ｘにおける寸法）は、たとえば、３～２０ｍｍである。基材１１の方向Ｙにおける寸法は、たとえば、１０～３００ｍｍである。 The substrate 11 has a plate shape. In the present embodiment, the base material 11 is made of a semiconductor material. Examples of the semiconductor material constituting the substrate 11 include Si, SiC, AlN, GaP, GaAs, InP, and GaN. Si is mentioned as a material of the base material 11 preferable for the configuration described below. The thickness of the substrate 11 is, for example, 0.625 to 0.720 mm. As shown in FIG. 1, the base material 11 has a flat plate shape extending in the direction Y. The width of the base material 11 (the dimension in the direction X of the base material 11) is, for example, 3 to 20 mm. The dimension in the direction Y of the base material 11 is, for example, 10 to 300 mm.
　図３は、図１に示したサーマルプリントヘッド１０１を模式的に表す部分拡大平面図（一部構成省略）である。図６は、図３のＶＩ－ＶＩ線に沿う部分拡大断面図である。図７は、サーマルプリントヘッド１０１の構成要素の形状をより忠実に表す部分拡大要部平面図である。図３では、保護層６、および、封止樹脂８２を省略している。図７では、絶縁層５、保護層６、および、封止樹脂８２を省略している。 FIG. 3 is a partially enlarged plan view (partially omitted) schematically showing the thermal print head 101 shown in FIG. 6 is a partially enlarged cross-sectional view taken along the line VI-VI in FIG. FIG. 7 is a partially enlarged plan view of the main part showing the shape of the components of the thermal print head 101 more faithfully. In FIG. 3, the protective layer 6 and the sealing resin 82 are omitted. In FIG. 7, the insulating layer 5, the protective layer 6, and the sealing resin 82 are omitted.
　図６に示すように、基材１１は基材表面１１１を有する。基材表面１１１は、方向Ｘと方向Ｙとに広がる平面状である。基材表面１１１は、方向Ｙに沿って長手状に延びる。基材表面１１１は、基材１１の厚さ方向Ｚの一方（以下、方向Ｚａと言う。図６では上方）を向く。すなわち、基材表面１１１は、抵抗体層４の位置する側を向く面である。 As shown in FIG. 6, the substrate 11 has a substrate surface 111. The substrate surface 111 has a planar shape extending in the direction X and the direction Y. The substrate surface 111 extends in the longitudinal direction along the direction Y. The base material surface 111 faces one side in the thickness direction Z of the base material 11 (hereinafter referred to as a direction Za, upward in FIG. 6). That is, the substrate surface 111 is a surface facing the side where the resistor layer 4 is located.
　図２、図６に示すように、蓄熱層２は基材１１に形成されている。蓄熱層２は、基材１１の基材表面１１１の全体を覆っている。蓄熱層２は、発熱部４１（後述）にて発生した熱を蓄えるためのものである。蓄熱層２の厚さは、たとえば、３μｍ以上である。図６に示すように、蓄熱層２は蓄熱層表面２１を有する。蓄熱層表面２１は方向Ｚａを向く。すなわち、蓄熱層表面２１は、抵抗体層４の位置する側を向く面である。本実施形態では、蓄熱層表面２１は全体にわたって平坦である。蓄熱層表面２１が平坦であると、半導体プロセスによって抵抗体層４や絶縁層５を形成しやすい。 2 and 6, the heat storage layer 2 is formed on the base material 11. The heat storage layer 2 covers the entire substrate surface 111 of the substrate 11. The heat storage layer 2 is for storing heat generated in the heat generating portion 41 (described later). The thickness of the heat storage layer 2 is, for example, 3 μm or more. As shown in FIG. 6, the heat storage layer 2 has a heat storage layer surface 21. The heat storage layer surface 21 faces the direction Za. That is, the heat storage layer surface 21 is a surface facing the side where the resistor layer 4 is located. In this embodiment, the heat storage layer surface 21 is flat throughout. If the heat storage layer surface 21 is flat, the resistor layer 4 and the insulating layer 5 are easily formed by a semiconductor process.
　図２、図６に示すように、本実施形態では、蓄熱層２は、第１層２６と第２層２７とを含む。第１層２６は、第２層２７と基材１１との間に位置している。第１層２６は、基材１１を構成する半導体材料を酸化した材料よりなる層である。たとえば、基材１１を構成する半導体材料がＳｉである場合には、第１層２６はＳｉＯ2よりなる層である。第２層
２７は絶縁材料よりなる層である。第２層２７を構成する材料は、特に限定されないが、本実施形態においては、第１層２６を構成する材料と同一の材料よりなる。本実施形態とは異なり、蓄熱層２が二層構造ではなく、一層構造であってもよい。 As shown in FIGS. 2 and 6, in the present embodiment, the heat storage layer 2 includes a first layer 26 and a second layer 27. The first layer 26 is located between the second layer 27 and the base material 11. The first layer 26 is a layer made of a material obtained by oxidizing a semiconductor material constituting the base material 11. For example, when the semiconductor material constituting the substrate 11 is Si, the first layer 26 is a layer made of SiO 2 . The second layer 27 is a layer made of an insulating material. Although the material which comprises the 2nd layer 27 is not specifically limited, In this embodiment, it consists of the same material as the material which comprises the 1st layer 26. Unlike the present embodiment, the heat storage layer 2 may have a single-layer structure instead of a two-layer structure.
　図２、図３、図６、図７に示す電極層３は基材１１に形成されている。図３および図７における電極層３には、理解の便宜上、ハッチを付している。具体的には、電極層３は蓄熱層２に積層されている。また、電極層３は抵抗体層４に積層されている。本実施形態においては、電極層３と蓄熱層２との間に、抵抗体層４が介在している。電極層３は、抵抗体層４に導通している。電極層３は、抵抗体層４に通電するための経路を構成している。電極層３を構成する材料としては、たとえば、Ａｕ、Ａｇ、Ｃｕ、Ｃｒ、Ａｌ－Ｓｉ、および、Ｔｉが挙げられる。本実施形態とは異なり、電極層３は、蓄熱層２と抵抗体層４との間に介在していてもよい。 The electrode layer 3 shown in FIG. 2, FIG. 3, FIG. 6, and FIG. The electrode layer 3 in FIGS. 3 and 7 is hatched for convenience of understanding. Specifically, the electrode layer 3 is laminated on the heat storage layer 2. The electrode layer 3 is laminated on the resistor layer 4. In the present embodiment, the resistor layer 4 is interposed between the electrode layer 3 and the heat storage layer 2. The electrode layer 3 is electrically connected to the resistor layer 4. The electrode layer 3 constitutes a path for energizing the resistor layer 4. Examples of the material constituting the electrode layer 3 include Au, Ag, Cu, Cr, Al—Si, and Ti. Unlike the present embodiment, the electrode layer 3 may be interposed between the heat storage layer 2 and the resistor layer 4.
　図４は、図３の領域ＩＶの部分拡大平面図である。図５は、図４から、電極層３を省略して示す平面図である。なお、図６は、図４のＶＩ－ＶＩ線に沿う断面図に相当する。 FIG. 4 is a partially enlarged plan view of region IV in FIG. FIG. 5 is a plan view showing the electrode layer 3 omitted from FIG. 6 corresponds to a cross-sectional view taken along the line VI-VI in FIG.
　図４、図６に示すように、電極層３は、第１導電部３１と第２導電部３２とを含む。第１導電部３１および第２導電部３２は、互いに離間している。第１導電部３１と第２導電部３２の離間寸法は、たとえば、１０５μｍである。 As shown in FIGS. 4 and 6, the electrode layer 3 includes a first conductive portion 31 and a second conductive portion 32. The first conductive portion 31 and the second conductive portion 32 are separated from each other. The distance between the first conductive portion 31 and the second conductive portion 32 is, for example, 105 μm.
　本実施形態においては、図３および図７に示すように、電極層３は、複数の個別電極３３（同図には６つ示す）と、一つの共通電極３５と、複数の中継電極３７（同図には６つ示す）とを含む。より具体的には、次のとおりである。 In this embodiment, as shown in FIGS. 3 and 7, the electrode layer 3 includes a plurality of individual electrodes 33 (six are shown in the figure), one common electrode 35, and a plurality of relay electrodes 37 ( 6 are shown in the figure). More specifically, it is as follows.
　複数の個別電極３３は、互いに導通していない。そのため、各個別電極３３には、サーマルプリントヘッド１０１の組み込まれたプリンタが使用される際に、個別に、互いに異なる電位が付与されうる。各個別電極３３は、個別電極帯状部３３１と、屈曲部３３３と、直行部３３４と、斜行部３３５と、ボンディング部３３６とを有する。図４、図６に示すように、各個別電極帯状部３３１は、電極層３における第１導電部３１を構成しており、方向Ｘに沿って延びる帯状である。各個別電極帯状部３３１は、抵抗体層４に積層されている。屈曲部３３３は、個別電極帯状部３３１につながり、方向Ｙおよび方向Ｘのいずれに対しても傾斜している。直行部３３４は、方向Ｘに平行にまっすぐ延びている。斜行部３３５は、方向Ｙおよび方向Ｘのいずれに対しても傾斜した方向に延びている。ボンディング部３３６は、ワイヤ８１がボンディングされる部分である。本実施形態においては、個別電極帯状部３３１、屈曲部３３３、直行部３３４、および斜行部３３５の幅が、たとえば４７．５μｍ程度であり、ボンディング部３３６の幅がたとえば８０μｍ程度である。 The plurality of individual electrodes 33 are not electrically connected to each other. Therefore, different electric potentials can be individually applied to the individual electrodes 33 when a printer incorporating the thermal print head 101 is used. Each individual electrode 33 includes an individual electrode strip portion 331, a bent portion 333, a direct portion 334, a skew portion 335, and a bonding portion 336. As shown in FIGS. 4 and 6, each individual electrode strip 331 constitutes the first conductive portion 31 in the electrode layer 3 and has a strip shape extending along the direction X. Each individual electrode strip 331 is stacked on the resistor layer 4. The bent portion 333 is connected to the individual electrode strip portion 331 and is inclined with respect to both the direction Y and the direction X. The straight portion 334 extends straight in parallel with the direction X. The skew portion 335 extends in a direction inclined with respect to both the direction Y and the direction X. The bonding part 336 is a part to which the wire 81 is bonded. In the present embodiment, the width of the individual electrode strip portion 331, the bent portion 333, the direct portion 334, and the skew portion 335 is, for example, about 47.5 μm, and the width of the bonding portion 336 is, for example, about 80 μm.
　共通電極３５は、サーマルプリントヘッド１０１の組み込まれたプリンタが使用される際に複数の個別電極３３に対して電気的に逆極性となる部位である。共通電極３５は、複数の共通電極帯状部３５１と、複数の分岐部３５３と、複数の直行部３５４と、複数の斜行部３５５と、複数の延出部３５６と、一つの基幹部３５７とを有する。各共通電極帯状部３５１は、方向Ｘに延びる帯状である。図４、図６に示すように、各共通電極３５において、複数の共通電極帯状部３５１は、電極層３における第１導電部３１を構成しており、方向Ｙに互いに離間し、且つ、互いに導通している。各共通電極帯状部３５１は、抵抗体層４に積層されている。各共通電極帯状部３５１は、個別電極帯状部３３１と方向Ｙに離間している。本実施形態においては、互いに隣接した２つずつの共通電極帯状部３５１が、２つの個別電極帯状部３３１に挟まれている。複数の共通電極帯状部３５１、および複数の個別電極帯状部３３１は、方向Ｙに沿って配列されている。分岐部３５３は、２つの共通電極帯状部３５１と１つの直行部３５４をつなぐ部分であり、Ｙ字状である。直行部３５４は、方向Ｘに平行にまっすぐ延びている。斜行部３５５は、方向Ｙおよび方向Ｘのいずれに対しても傾斜した方向に延びている。延出部３５６は、斜行部３５５につながり、方向Ｘに沿って延びている。基幹部３５７は、方向Ｙに延びる帯状であり、複数の延出部３５６がつながっている。本実施形態においては、共通電極帯状部３５１、直行部３５４、斜行部３５５、および延出部３５６の幅が、たとえば４７．５μｍ程度である。 The common electrode 35 is a portion that is electrically reverse in polarity with respect to the plurality of individual electrodes 33 when the printer in which the thermal print head 101 is incorporated is used. The common electrode 35 includes a plurality of common electrode strip portions 351, a plurality of branch portions 353, a plurality of orthogonal portions 354, a plurality of oblique portions 355, a plurality of extending portions 356, and a basic portion 357. Have Each common electrode strip 351 has a strip shape extending in the direction X. As shown in FIGS. 4 and 6, in each common electrode 35, the plurality of common electrode strips 351 form the first conductive portion 31 in the electrode layer 3, are separated from each other in the direction Y, and Conducted. Each common electrode strip 351 is stacked on the resistor layer 4. Each common electrode strip 351 is separated from the individual electrode strip 331 in the direction Y. In this embodiment, two common electrode strips 351 adjacent to each other are sandwiched between two individual electrode strips 331. The plurality of common electrode strips 351 and the plurality of individual electrode strips 331 are arranged along the direction Y. The branch part 353 is a part that connects the two common electrode strips 351 and one orthogonal part 354, and has a Y-shape. The straight portion 354 extends straight in parallel with the direction X. The skew portion 355 extends in a direction inclined with respect to both the direction Y and the direction X. The extension portion 356 is connected to the skew portion 355 and extends along the direction X. The trunk portion 357 has a strip shape extending in the direction Y, and a plurality of extending portions 356 are connected. In the present embodiment, the widths of the common electrode strip portion 351, the direct portion 354, the oblique portion 355, and the extending portion 356 are, for example, about 47.5 μm.
　複数の中継電極３７はそれぞれ、複数の個別電極３３のうちの一つと共通電極３５との間に電気的に介在する。各中継電極３７は、２つの中継電極帯状部３７１と連結部３７３とを有する。図４、図６に示すように、各中継電極帯状部３７１は、電極層３における第２導電部３２を構成しており、方向Ｘに延びる帯状である。すなわち、電極層３における第２導電部３２と第１導電部３１とは、互いに離間しており、本実施形態においては、方向Ｘに互いに離間している。複数の中継電極帯状部３７１は、方向Ｙに互いに離間している。各中継電極帯状部３７１は、抵抗体層４に積層されている。複数の中継電極帯状部３７１は、抵抗体層４上において、複数の帯状部３３１，３５１とは方向Ｘにおいて反対側に配置されている。各中継電極３７における２つの中継電極帯状部３７１の一方は、複数の共通電極帯状部３５１のいずれか一つと、方向Ｘに互いに離間している。各中継電極３７における２つの中継電極帯状部３７１の他方は、複数の個別電極帯状部３３１のいずれか一つと、方向Ｘに互いに離間している。複数の連結部３７３はそれぞれ、方向Ｙに沿って延びている。各連結部３７３は、各中継電極３７における２つの中継電極帯状部３７１につながる。これにより、各中継電極３７における２つの中継電極帯状部３７１どうしが互いに導通している。 Each of the plurality of relay electrodes 37 is electrically interposed between one of the plurality of individual electrodes 33 and the common electrode 35. Each relay electrode 37 has two relay electrode strips 371 and a connecting part 373. As shown in FIGS. 4 and 6, each relay electrode strip 371 constitutes the second conductive portion 32 in the electrode layer 3 and has a strip shape extending in the direction X. In other words, the second conductive portion 32 and the first conductive portion 31 in the electrode layer 3 are separated from each other, and are separated from each other in the direction X in the present embodiment. The plurality of relay electrode strips 371 are separated from each other in the direction Y. Each relay electrode strip 371 is stacked on the resistor layer 4. The plurality of relay electrode strips 371 are arranged on the resistor layer 4 on the side opposite to the plurality of strips 331 and 351 in the direction X. One of the two relay electrode strips 371 in each relay electrode 37 is separated from one of the plurality of common electrode strips 351 in the direction X. The other of the two relay electrode strips 371 in each relay electrode 37 is separated from one of the plurality of individual electrode strips 331 in the direction X. Each of the plurality of connecting portions 373 extends along the direction Y. Each connecting portion 373 is connected to two relay electrode strips 371 in each relay electrode 37. As a result, the two relay electrode strips 371 in each relay electrode 37 are electrically connected to each other.
　なお、電極層３は、必ずしも中継電極３７を含む必要はなく、たとえば、複数の個別電極と、これらの個別電極に隣接する共通電極と、を含むものであってもよい。 The electrode layer 3 does not necessarily include the relay electrode 37, and may include, for example, a plurality of individual electrodes and a common electrode adjacent to these individual electrodes.
　図２～図７に示す抵抗体層４は基材１１に形成されている。本実施形態では、抵抗体層４は、蓄熱層２に直接形成されている。本実施形態においては、抵抗体層４は、複数の矩形状の部分を有する。抵抗体層４は、電極層３からの電流が流れた部分が発熱する。このように発熱することによって印字ドットが形成される。抵抗体層４は、電極層３を構成する材料よりも抵抗率が高い材料よりなる。抵抗体層４を構成する材料としては、たとえば、ポリシリコン、ＴａＳｉＯ2、および、ＴｉＯＮが挙げられる。本実施形態においては、抵抗体層４には、抵抗値の調整のため、イオン（たとえば、ホウ素）がドーピングされている。抵抗体層４の厚さは、たとえば、０．２μｍ～１μｍである。 The resistor layer 4 shown in FIGS. 2 to 7 is formed on the base material 11. In the present embodiment, the resistor layer 4 is formed directly on the heat storage layer 2. In the present embodiment, the resistor layer 4 has a plurality of rectangular portions. The resistor layer 4 generates heat at the portion where the current from the electrode layer 3 flows. Print dots are formed by generating heat in this way. The resistor layer 4 is made of a material having a higher resistivity than the material constituting the electrode layer 3. Examples of the material constituting the resistor layer 4 include polysilicon, TaSiO 2 , and TiON. In the present embodiment, the resistor layer 4 is doped with ions (for example, boron) in order to adjust the resistance value. The thickness of the resistor layer 4 is, for example, 0.2 μm to 1 μm.
　図４～図６に示すように、抵抗体層４は、第１端面４１６と、第２端面４１７とを有する。 As shown in FIGS. 4 to 6, the resistor layer 4 has a first end face 416 and a second end face 417.
　図４～図６に示すように、第１端面４１６は、第２導電部３２（中継電極帯状部３７１）の位置する側とは反対側（すなわち、図６の右方向）を向いている。第２端面４１７は、第１導電部３１（個別電極帯状部３３１もしくは共通電極帯状部３５１）の位置する側とは反対側（すなわち、図６の左方向）を向いている。 As shown in FIGS. 4 to 6, the first end surface 416 faces the side opposite to the side where the second conductive portion 32 (relay electrode strip portion 371) is located (that is, the right direction in FIG. 6). The second end face 417 faces the side opposite to the side where the first conductive portion 31 (the individual electrode strip portion 331 or the common electrode strip portion 351) is located (that is, the left direction in FIG. 6).
　図６に示すように、抵抗体層４は、サーマルプリントヘッド１０１の使用時に発熱する発熱部４１を含む。図４、図５に示すように、発熱部４１は、基材１１の厚さ方向視において、第１導電部３１および第２導電部３２に跨っている。各発熱部４１は蓄熱層２に積層されている。 As shown in FIG. 6, the resistor layer 4 includes a heat generating portion 41 that generates heat when the thermal print head 101 is used. As shown in FIGS. 4 and 5, the heat generating portion 41 straddles the first conductive portion 31 and the second conductive portion 32 in the thickness direction of the base material 11. Each heat generating part 41 is laminated on the heat storage layer 2.
　図６に示すように、発熱部４１は、第１当接部４１１および第２当接部４１２を含んでいる。第１当接部４１１は、電極層３における第１導電部３１に当接している。第２当接部４１２は、電極層３における第２導電部３２に当接している。 As shown in FIG. 6, the heat generating part 41 includes a first contact part 411 and a second contact part 412. The first contact portion 411 is in contact with the first conductive portion 31 in the electrode layer 3. The second contact portion 412 is in contact with the second conductive portion 32 in the electrode layer 3.
　図６に示すように、絶縁層５は、発熱部４１および電極層３の間に介在している部分を有する。絶縁層５を構成する材料としては、たとえば、ＳｉＯ2、および、ＳｉＡｌＯ2が挙げられる。絶縁層５は、第１介在部５１と、第２介在部５２と、中間部５３とを含む。図４～図６に示すように、第１介在部５１は、第１導電部３１および発熱部４１の間に介在している部位である。第２介在部５２は、第２導電部３２および発熱部４１の間に介在している。中間部５３は、基材１１の厚さ方向Ｚ視において、第１介在部５１と第２介在部５２とに挟まれている。中間部５３は、第１介在部５１および第２介在部５２につながっている。 As shown in FIG. 6, the insulating layer 5 has a portion interposed between the heat generating portion 41 and the electrode layer 3. Examples of the material constituting the insulating layer 5 include SiO 2 and SiAlO 2 . The insulating layer 5 includes a first interposition part 51, a second interposition part 52, and an intermediate part 53. As shown in FIGS. 4 to 6, the first interposition part 51 is a part interposed between the first conductive part 31 and the heat generating part 41. The second interposed part 52 is interposed between the second conductive part 32 and the heat generating part 41. The intermediate portion 53 is sandwiched between the first interposed portion 51 and the second interposed portion 52 in the thickness direction Z view of the base material 11. The intermediate part 53 is connected to the first interposition part 51 and the second interposition part 52.
　図４～図６に示すように、本実施形態において、第１介在部５１には、少なくとも１以上の第１開口５１１が形成されている。図４、図５にて第１開口５１１は円形状である例を示しているが、第１開口５１１の形状は円形状に限られない。たとえば、第１開口５１１は矩形状であってもよい。図４、図５にて第１介在部５１に第１開口５１１が複数形成されている例を示しているが、第１介在部５１に形成されている第１開口５１１の個数は、１つであってもよい。第１開口５１１と重なる位置に、上述の発熱部４１における第１当接部４１１が位置している。図６に示すように、本実施形態においては更に、第１開口５１１内に、第１導電部３１の一部が形成されている。 As shown in FIGS. 4 to 6, in the present embodiment, at least one or more first openings 511 are formed in the first interposition part 51. 4 and 5 show an example in which the first opening 511 has a circular shape, the shape of the first opening 511 is not limited to a circular shape. For example, the first opening 511 may be rectangular. 4 and 5 show an example in which a plurality of first openings 511 are formed in the first interposition part 51, the number of the first openings 511 formed in the first interposition part 51 is one. It may be. The first contact portion 411 in the heat generating portion 41 described above is located at a position overlapping with the first opening 511. As shown in FIG. 6, in the present embodiment, a part of the first conductive portion 31 is further formed in the first opening 511.
　本実施形態において、第２介在部５２には、少なくとも１以上の第２開口５２１が形成されている。図４、図５にて第２開口５２１は円形状である例を示しているが、第２開口５２１の形状は円形状に限られない。たとえば、第２開口５２１は矩形状であってもよい。図４、図５にて第２介在部５２に第２開口５２１が複数形成されている例を示しているが、第２介在部５２に形成されている第２開口５２１の個数は、１つであってもよい。第２開口５２１と重なる位置に、上述の発熱部４１における第２当接部４１２が位置している。図６に示すように、本実施形態においては更に、第２開口５２１内に、第２導電部３２の一部が形成されている。 In the present embodiment, at least one or more second openings 521 are formed in the second interposition part 52. 4 and 5 show an example in which the second opening 521 has a circular shape, the shape of the second opening 521 is not limited to a circular shape. For example, the second opening 521 may be rectangular. 4 and 5 show an example in which a plurality of second openings 521 are formed in the second interposition part 52, the number of the second openings 521 formed in the second interposition part 52 is one. It may be. The second contact portion 412 in the heat generating portion 41 described above is located at a position overlapping the second opening 521. As shown in FIG. 6, in the present embodiment, a part of the second conductive portion 32 is further formed in the second opening 521.
　図４～図６に示すように、本実施形態においては、絶縁層５は、部分５８１，５８２を含む。部分５８１は、第１介在部５１につながり且つ第１端面４１６を覆う部分である。部分５８２は、第２介在部５２につながり且つ第２端面４１７を覆う部分である。部分５８１，５８２はそれぞれ、蓄熱層２に直接接している。すなわち、絶縁層５に直接接する部分を、蓄熱層２が有している。本実施形態とは異なり、絶縁層５が部分５８１，５８２を含んでいなくてもよい。 As shown in FIGS. 4 to 6, in the present embodiment, the insulating layer 5 includes portions 581 and 582. The part 581 is a part connected to the first interposition part 51 and covering the first end face 416. The part 582 is a part that is connected to the second interposition part 52 and covers the second end face 417. The portions 581 and 582 are in direct contact with the heat storage layer 2. That is, the heat storage layer 2 has a portion that is in direct contact with the insulating layer 5. Unlike the present embodiment, the insulating layer 5 may not include the portions 581 and 582.
　図２、図６に示す保護層６は、電極層３と抵抗体層４と絶縁層５とを覆っており、電極層３と抵抗体層４と絶縁層５とを保護するためのものである。保護層６は、絶縁材料よりなる。保護層６を構成する絶縁材料としては、たとえば、ＳｉＡｌＯＮ、ＳｉＣおよびＣＳｉＣが挙げられる。保護層６は、不透明であり、典型的には、黒色である。なお、本実施形態においては、保護層６と電極層３、抵抗体層４、絶縁層５および基材１１との間には、下地保護層６０が介在している。下地保護層６０は、平面視において基材１１のほぼ全域に形成されている。下地保護層６０は、たとえばガラス等からなる透明な層である。ただし、たとえば導通を図るべき箇所等においては、下地保護層６０に適宜開口が設けられている。また、図２および図８を除き、理解の便宜上、下地保護層６０を省略し、適宜説明を省略する。図８において、濃いハッチングが施された領域が、保護層６を示しており、薄いハッチングが施された領域が、下地保護層６０を示している。同図に示すように、保護層６は、位置確認マーク４５を露出させている。また、下地保護層６０は、位置確認マーク４５を覆っている。 The protective layer 6 shown in FIGS. 2 and 6 covers the electrode layer 3, the resistor layer 4, and the insulating layer 5, and protects the electrode layer 3, the resistor layer 4, and the insulating layer 5. is there. The protective layer 6 is made of an insulating material. Examples of the insulating material constituting the protective layer 6 include SiAlON, SiC, and CSiC. The protective layer 6 is opaque and is typically black. In the present embodiment, the base protective layer 60 is interposed between the protective layer 6 and the electrode layer 3, the resistor layer 4, the insulating layer 5, and the base material 11. The base protective layer 60 is formed over almost the entire area of the substrate 11 in plan view. The base protective layer 60 is a transparent layer made of glass or the like, for example. However, for example, openings are appropriately provided in the base protective layer 60 in places where conduction is to be achieved. Further, except for FIG. 2 and FIG. 8, the base protective layer 60 is omitted for convenience of understanding, and the description is omitted as appropriate. In FIG. 8, the dark hatched area indicates the protective layer 6, and the thin hatched area indicates the base protective layer 60. As shown in the figure, the protective layer 6 exposes the position confirmation mark 45. In addition, the base protective layer 60 covers the position confirmation mark 45.
　保護層６には、複数の貫通窓６１（図２には１つ示す）が形成されている。各貫通窓６１からは、ボンディング部３３６が露出している。 The protective layer 6 has a plurality of through windows 61 (one shown in FIG. 2). A bonding portion 336 is exposed from each through window 61.
　位置確認マーク４５は、基材１１に支持されており、たとえばポリシリコンなどの抵抗体層４と同じ材質からなる。本実施形態においては、位置確認マーク４５は、蓄熱層２上に形成されており、蓄熱層２に直接接している。図１および図８に示すように、本実施形態においては、２つの位置確認マーク４５が、基材１１のＹ方向両端付近に設けられている。保護層６が黒色などの不透明なものである場合、位置確認マーク４５は、保護層６から露出している。保護層６が透明である場合、位置確認マーク４５は保護層６に覆われていてもよい。位置確認マーク４５は、サーマルプリントヘッド１０１をプリンタに取り付ける際に、プリンタに対するサーマルプリントヘッド１０１の相対位置を特定するためのマークとして用いられる。このため、位置確認マーク４５は、肉眼による目視、あるいは撮像手段による画像解析が可能となるように、基材１１もしくは蓄熱層２に対してコントラストを生じうる外観を有する。 The position confirmation mark 45 is supported by the base 11 and is made of the same material as the resistor layer 4 such as polysilicon. In the present embodiment, the position confirmation mark 45 is formed on the heat storage layer 2 and is in direct contact with the heat storage layer 2. As shown in FIGS. 1 and 8, in this embodiment, two position confirmation marks 45 are provided near both ends of the base material 11 in the Y direction. When the protective layer 6 is opaque such as black, the position confirmation mark 45 is exposed from the protective layer 6. When the protective layer 6 is transparent, the position confirmation mark 45 may be covered with the protective layer 6. The position confirmation mark 45 is used as a mark for specifying the relative position of the thermal print head 101 with respect to the printer when the thermal print head 101 is attached to the printer. For this reason, the position confirmation mark 45 has an appearance capable of producing contrast with respect to the base material 11 or the heat storage layer 2 so that visual observation by the naked eye or image analysis by the imaging unit is possible.
　図９は、位置確認マーク４５を示す要部拡大平面図である。図１０は、図９のＸ－Ｘ線に沿う要部拡大断面図である。同図に示すように、位置確認マーク４５は、主走査方向部４５１および副走査方向部４５２を有している。主走査方向部４５１は、主走査方向であるＹ方向に延びている。副走査方向部４５２は、副走査方向であるＸ方向に延びている。主走査方向部４５１と副走査方向部４５２とは、一体的に形成されている。主走査方向部４５１と副走査方向部４５２とは、互いに交差している。より具体的には、主走査方向部４５１と副走査方向部４５２とは、互いの中央部分において交差している。 FIG. 9 is an enlarged plan view of a main part showing the position confirmation mark 45. FIG. 10 is an enlarged cross-sectional view of a main part taken along line XX in FIG. As shown in the figure, the position confirmation mark 45 has a main scanning direction portion 451 and a sub scanning direction portion 452. The main scanning direction portion 451 extends in the Y direction, which is the main scanning direction. The sub-scanning direction portion 452 extends in the X direction that is the sub-scanning direction. The main scanning direction portion 451 and the sub scanning direction portion 452 are integrally formed. The main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other. More specifically, the main scanning direction portion 451 and the sub-scanning direction portion 452 intersect at the center portion of each other.
　図２に示す配線基板１２は、たとえば、プリント配線基板である。配線基板１２は、基材層と図示しない配線層とが積層された構造を有する。基材層は、たとえばガラスエポキシ樹脂よりなる。配線層は、たとえばＣｕよりなる。 The wiring board 12 shown in FIG. 2 is, for example, a printed wiring board. The wiring board 12 has a structure in which a base material layer and a wiring layer (not shown) are laminated. The base material layer is made of, for example, a glass epoxy resin. The wiring layer is made of Cu, for example.
　図２、図３に示す駆動ＩＣ７は、各個別電極３３にそれぞれ電位を付与し、各発熱部４１に流す電流を制御するものである。各個別電極３３にそれぞれ電位が付与されることにより、共通電極３５と各個別電極３３との間に電圧が印加され、各発熱部４１に選択的に電流が流れる。駆動ＩＣ７は、配線基板１２に搭載されている。図３に示すように、駆動ＩＣ７は、複数のパッド７１を含む。複数のパッド７１は、たとえば、２列に形成されている。なお、複数のパッド７１は、３列あるいは４列に形成されていてもよい。 2 and FIG. 3 controls the current flowing through each heat generating portion 41 by applying a potential to each individual electrode 33. By applying a potential to each individual electrode 33, a voltage is applied between the common electrode 35 and each individual electrode 33, and a current flows selectively through each heat generating portion 41. The drive IC 7 is mounted on the wiring board 12. As shown in FIG. 3, the drive IC 7 includes a plurality of pads 71. The plurality of pads 71 are formed in, for example, two rows. The plurality of pads 71 may be formed in three rows or four rows.
　図２、図３に示す複数のワイヤ８１は、たとえば、Ａｕなどの導体よりなる。複数のワイヤ８１のうちワイヤ８１１はそれぞれ、駆動ＩＣ７にボンディングされ、且つ、電極層３にボンディングされている。より具体的には、各ワイヤ８１１は、駆動ＩＣ７におけるパッド７１にボンディングされ、且つ、ボンディング部３３６にボンディングされている。これにより、駆動ＩＣ７と各個別電極３３とが導通している。図３に示すように、複数のワイヤ８１のうちワイヤ８１２は、それぞれ、駆動ＩＣ７におけるパッド７１にボンディングされ、且つ、配線基板１２における配線層にボンディングされている。これにより、当該配線層を介して、駆動ＩＣ７とコネクタ８３とが導通している。同図に示すように、複数のワイヤ８１のうちワイヤ８１３は、共通電極３５における基幹部３５７にボンディングされ、且つ、配線基板１２における配線層にボンディングされている。これにより、共通電極３５と上記配線層とが導通している。 2 and 3 are made of, for example, a conductor such as Au. Of the plurality of wires 81, the wires 811 are bonded to the driving IC 7 and bonded to the electrode layer 3. More specifically, each wire 811 is bonded to the pad 71 in the driving IC 7 and bonded to the bonding portion 336. As a result, the driving IC 7 and each individual electrode 33 are electrically connected. As shown in FIG. 3, among the plurality of wires 81, the wires 812 are bonded to the pads 71 in the driving IC 7 and bonded to the wiring layer in the wiring substrate 12. As a result, the drive IC 7 and the connector 83 are electrically connected via the wiring layer. As shown in the figure, among the plurality of wires 81, the wire 813 is bonded to the trunk portion 357 of the common electrode 35 and is bonded to the wiring layer of the wiring substrate 12. As a result, the common electrode 35 is electrically connected to the wiring layer.
　図２に示す封止樹脂８２は、たとえば、黒色の樹脂よりなる。封止樹脂８２は、駆動ＩＣ７、複数のワイヤ８１、および、保護層６を覆っており、駆動ＩＣ７および複数のワイヤ８１を保護している。封止樹脂８２は保護層６に直接接する。コネクタ８３は、配線基板１２に固定されている。コネクタ８３は、サーマルプリントヘッド１０１の外部からサーマルプリントヘッド１０１へ電力を供給し、駆動ＩＣ７を制御するためのものである。 2 is made of, for example, a black resin. The sealing resin 82 covers the drive IC 7, the plurality of wires 81, and the protective layer 6, and protects the drive IC 7 and the plurality of wires 81. The sealing resin 82 is in direct contact with the protective layer 6. The connector 83 is fixed to the wiring board 12. The connector 83 is for supplying power from the outside of the thermal print head 101 to the thermal print head 101 and controlling the drive IC 7.
　次に、サーマルプリントヘッド１０１の使用方法の一例について簡単に説明する。 Next, an example of how to use the thermal print head 101 will be briefly described.
　サーマルプリントヘッド１０１は、プリンタに組み込まれた状態で使用される。図２に示したように、当該プリンタ内において、サーマルプリントヘッド１０１の各発熱部４１はプラテンローラ８０２に対向している。当該プリンタの使用時には、プラテンローラ８０２が回転することにより、印刷媒体８０１が、方向Ｘに沿ってプラテンローラ８０２と各発熱部４１との間に一定速度で送給される。印刷媒体８０１は、プラテンローラ８０２によって保護層６のうち各発熱部４１を覆う部分に押しあてられる。一方、図３に示した各個別電極３３には、駆動ＩＣ７によって選択的に電位が付与される。これにより、共通電極３５と複数の個別電極３３の各々との間に電圧が印加される。そして、複数の発熱部４１には選択的に電流が流れ、熱が発生する。そして、各発熱部４１にて発生した熱は、保護層６を介して印刷媒体８０１に伝わる。そして、印刷媒体８０１上の方向Ｙに線状に延びる第１ライン領域に、複数のドットが印刷される。また、各発熱部４１にて発生した熱は、蓄熱層２にも伝わり、蓄熱層２にて蓄えられる。 The thermal print head 101 is used in a state incorporated in a printer. As shown in FIG. 2, each heat generating portion 41 of the thermal print head 101 faces the platen roller 802 in the printer. When the printer is used, the platen roller 802 rotates to feed the print medium 801 along the direction X between the platen roller 802 and each heat generating unit 41 at a constant speed. The print medium 801 is pressed against a portion of the protective layer 6 that covers each heat generating portion 41 by the platen roller 802. On the other hand, a potential is selectively applied to each individual electrode 33 shown in FIG. Thereby, a voltage is applied between the common electrode 35 and each of the plurality of individual electrodes 33. Then, current selectively flows through the plurality of heat generating portions 41 to generate heat. Then, the heat generated in each heat generating part 41 is transmitted to the print medium 801 through the protective layer 6. Then, a plurality of dots are printed in the first line region extending linearly in the direction Y on the print medium 801. Further, the heat generated in each heat generating part 41 is also transmitted to the heat storage layer 2 and stored in the heat storage layer 2.
　更に、プラテンローラ８０２が回転することにより、印刷媒体８０１が、方向Ｘに沿って一定速度で引き続き送給される。そして、上述の第１ライン領域への印刷と同様に、印刷媒体８０１上の方向Ｙに線状に延びる、第１ライン領域に隣接する第２ライン領域への印刷が行われる。第２ライン領域への印刷の際、印刷媒体８０１には、各発熱部４１にて発生した熱に加え、第１ライン領域への印刷時に蓄熱層２にて蓄えられた熱が伝わる。このようにして、第２ライン領域への印刷が行われる。以上のように、印刷媒体８０１上の方向Ｙに線状に延びるライン領域ごとに、複数のドットを印刷することにより、印刷媒体８０１への印刷が行われる。 Further, the printing medium 801 is continuously fed along the direction X at a constant speed by the rotation of the platen roller 802. Then, similarly to the above-described printing on the first line area, printing is performed on the second line area adjacent to the first line area that extends linearly in the direction Y on the print medium 801. When printing on the second line area, in addition to the heat generated in each heat generating portion 41, the heat stored in the heat storage layer 2 during printing on the first line area is transmitted to the print medium 801. In this way, printing on the second line area is performed. As described above, printing on the print medium 801 is performed by printing a plurality of dots for each line region extending linearly in the direction Y on the print medium 801.
　次に、サーマルプリントヘッド１０１の製造方法の一例について簡単に説明する。本実施形態においてサーマルプリントヘッド１０１を製造するには、半導体プロセスを用いる。 Next, an example of a method for manufacturing the thermal print head 101 will be briefly described. In order to manufacture the thermal print head 101 in this embodiment, a semiconductor process is used.
　まず、図１１に示すように、半導体基板１９を用意する。本実施形態において半導体基板１９はＳｉよりなる。次に、図１２に示すように、半導体基板１９の表面を熱酸化する。これにより、基材１１と、基材１１に積層された第１層２６とが形成される。本実施形態においては、第１層２６は、ＳｉＯ2よりなる。次に、図１３に示すように、ＣＶＤもしくはスパッタによって、第１層２６上に第２層２７を形成する。これにより、基材１１に積層された蓄熱層２が形成される。図示することは省略するが、基材１１の裏面にもＳｉＯ2層が形成される。なお、本実施形態とは異なり、半導体基板１９の表面を熱酸化する必要は必ずしもなく、ＣＶＤもしくはスパッタによって、直接、蓄熱層２を形成してもよい。 First, as shown in FIG. 11, a semiconductor substrate 19 is prepared. In the present embodiment, the semiconductor substrate 19 is made of Si. Next, as shown in FIG. 12, the surface of the semiconductor substrate 19 is thermally oxidized. Thereby, the base material 11 and the first layer 26 laminated on the base material 11 are formed. In the present embodiment, the first layer 26 is made of SiO 2 . Next, as shown in FIG. 13, a second layer 27 is formed on the first layer 26 by CVD or sputtering. Thereby, the heat storage layer 2 laminated | stacked on the base material 11 is formed. Although illustration is omitted, an SiO 2 layer is also formed on the back surface of the substrate 11. Unlike the present embodiment, it is not always necessary to thermally oxidize the surface of the semiconductor substrate 19, and the heat storage layer 2 may be formed directly by CVD or sputtering.
　次に、図１４に示すように、抵抗体層４’を形成する。抵抗体層４’の形成は、たとえば、ＣＶＤもしくはスパッタにより行う。抵抗体層４’は、基材１１の表面の全面に形成する。次に、図１５、図１６に示すように、抵抗体層４’をエッチングすることにより、抵抗体層４’’を形成する。抵抗体層４’のエッチングは、フォトリソグラフィーにより行う。図１６に示すように、本実施形態では、抵抗体層４’’は、一方向に沿って帯状に延びる帯状部分と、基材１１のＹ方向両端付近に相当する位置に配置された十字状部分と、を有する。前記帯状部分は、複数の発熱部４１を含む抵抗体層４となる部位である。前記十字状部分は、位置確認マーク４５となる部位である。次に、抵抗体層４が所望の抵抗値になるように、抵抗体層４’’にイオンを打ち込む（図示略）。このイオンの打ち込みは、前記帯状部分だけでなく、十字状部分にも行う。 Next, as shown in FIG. 14, a resistor layer 4 'is formed. The resistor layer 4 'is formed by, for example, CVD or sputtering. The resistor layer 4 ′ is formed on the entire surface of the substrate 11. Next, as shown in FIGS. 15 and 16, the resistor layer 4 ″ is formed by etching the resistor layer 4 ′. Etching of the resistor layer 4 'is performed by photolithography. As shown in FIG. 16, in the present embodiment, the resistor layer 4 ″ has a strip-shaped portion extending in a strip shape along one direction and a cross shape disposed at positions corresponding to the vicinity of both ends of the base material 11 in the Y direction. And a portion. The belt-like portion is a portion that becomes the resistor layer 4 including the plurality of heat generating portions 41. The cross-shaped portion is a portion that becomes the position confirmation mark 45. Next, ions are implanted into the resistor layer 4 ″ so that the resistor layer 4 has a desired resistance value (not shown). This ion implantation is performed not only on the belt-shaped portion but also on the cross-shaped portion.
　次に、図１７に示すように、絶縁層５’を形成する。絶縁層５’の形成は、たとえば、ＣＶＤもしくはスパッタにより行う。次に、図１８、図１９に示すように、絶縁層５’をエッチングすることにより、上述の絶縁層５を形成する。絶縁層５’をエッチングする当該工程を経ることにより、上述の第１開口５１１および第２開口５２１が形成される。 Next, as shown in FIG. 17, an insulating layer 5 'is formed. The insulating layer 5 'is formed by, for example, CVD or sputtering. Next, as shown in FIGS. 18 and 19, the insulating layer 5 'is etched to form the insulating layer 5 described above. Through the step of etching the insulating layer 5 ′, the first opening 511 and the second opening 521 are formed.
　次に、図２０、図２１に示すように、電極層３’を形成する。電極層３’の形成は、たとえば、スパッタもしくはＣＶＤにより行う。次に、図２２、図２３に示すように、電極層３’をエッチングすることにより、上述の形状の電極層３を形成する。電極層３’のエッチングは、フォトリソグラフィーにより行う。 Next, as shown in FIGS. 20 and 21, an electrode layer 3 'is formed. The electrode layer 3 'is formed by sputtering or CVD, for example. Next, as shown in FIGS. 22 and 23, the electrode layer 3 'is etched to form the electrode layer 3 having the above-described shape. Etching of the electrode layer 3 'is performed by photolithography.
　次に、図２４に示すように、抵抗体層４’’をエッチングすることにより、複数の矩形状の部分を有する上述の抵抗体層４が形成される。これは、サーマルプリントヘッド１０１の使用時において、抵抗体層４内を図２４の横方向に電流が流れることを防止するためである。このエッチングにおいては、抵抗体材料層４’’の前記十字状部分は、処理がなされない。なお、本実施形態とは異なり、帯状の抵抗体層４’’を形成することなく、抵抗体層４’を一度エッチングすることにより、複数の矩形状の部分を有する上述の抵抗体層４を形成してもよい。また、抵抗体材料層４’’を形成するためのエッチングにおいては、前記十字状部分を形成せず、図２３から図２４に示す状態とするためのエッチングにおいて、前記十字状部分、すなわち位置確認マーク４５を形成してもよい。 Next, as shown in FIG. 24, the resistor layer 4 '' is etched to form the resistor layer 4 having a plurality of rectangular portions. This is to prevent a current from flowing in the lateral direction of FIG. 24 in the resistor layer 4 when the thermal print head 101 is used. In this etching, the cross-shaped portion of the resistor material layer 4 ″ is not processed. Unlike the present embodiment, the resistor layer 4 ′ is etched once without forming the strip-shaped resistor layer 4 ″, so that the resistor layer 4 having a plurality of rectangular portions is formed. It may be formed. Further, in the etching for forming the resistor material layer 4 ″, the cross-shaped portion is not formed, but in the etching for obtaining the state shown in FIGS. The mark 45 may be formed.
　次に、図２５に示すように、保護層６’を形成する。保護層６’の形成は、たとえば、ＣＶＤにより行う。次に、図２６に示すように、保護層６’をエッチングすることにより、複数の貫通窓６１を形成する。保護層６’のエッチングは、フォトリソグラフィーにより行う。なお、保護層６の形成に先立ち、上述した下地保護層６０を形成しておく。 Next, as shown in FIG. 25, a protective layer 6 'is formed. The protective layer 6 'is formed by, for example, CVD. Next, as shown in FIG. 26, the plurality of through windows 61 are formed by etching the protective layer 6 '. Etching of the protective layer 6 'is performed by photolithography. Prior to the formation of the protective layer 6, the base protective layer 60 described above is formed.
　次に、図示は省略するが、基材１１の裏面を研磨することにより、基材１１の厚みを低減させる。次に、抵抗体層４の抵抗値の測定、および、基材１１のダイシングを行ったのち、ダイシング後の製品と、配線基板１２とを放熱板１３に配置する。次に、図２に示した、駆動ＩＣ７を配線基板１２に搭載し、ワイヤ８１を所望の箇所にボンディングし、封止樹脂８２を形成する。これらの工程を経るなどして、図２に示したサーマルプリントヘッド１０１が製造される。 Next, although not shown, the thickness of the base material 11 is reduced by polishing the back surface of the base material 11. Next, after measuring the resistance value of the resistor layer 4 and dicing the base material 11, the product after dicing and the wiring board 12 are arranged on the heat radiation plate 13. Next, the driving IC 7 shown in FIG. 2 is mounted on the wiring board 12, and the wire 81 is bonded to a desired location to form the sealing resin 82. The thermal print head 101 shown in FIG. 2 is manufactured through these steps.
　次に、本実施形態の作用効果について説明する。 Next, the function and effect of this embodiment will be described.
　本実施形態においては、基材１１に位置確認マーク４５が形成されている。位置確認マーク４５は、抵抗体層４と同じ材質からなり、抵抗体層４とともに一括して形成される。このため、位置確認マーク４５と抵抗体層４の発熱部４１との位置関係が正確に特定されやすい。サーマルプリントヘッド１０１をプリンタに取り付ける際に、位置確認マーク４５を位置合わせの基準として用いることにより、プリンタと抵抗体層４の発熱部４１との相対位置をより正確に設定することが可能である。したがって、サーマルプリントヘッド１０１のプリンタに対する取り付け精度を向上させることができる。 In the present embodiment, the position confirmation mark 45 is formed on the base material 11. The position confirmation mark 45 is made of the same material as the resistor layer 4 and is formed together with the resistor layer 4. For this reason, the positional relationship between the position confirmation mark 45 and the heat generating portion 41 of the resistor layer 4 is easily specified accurately. When the thermal print head 101 is attached to the printer, the relative position between the printer and the heat generating portion 41 of the resistor layer 4 can be set more accurately by using the position confirmation mark 45 as a reference for alignment. . Therefore, the mounting accuracy of the thermal print head 101 with respect to the printer can be improved.
　抵抗体層４の形成と位置確認マーク４５の形成とを同一のフォトリソグラフィーを用いた工程によって行うことにより、抵抗体層４と位置確認マーク４５との相対位置をより正確に設定することができる。 By performing the formation of the resistor layer 4 and the formation of the position confirmation mark 45 through the same photolithography process, the relative position between the resistor layer 4 and the position confirmation mark 45 can be set more accurately. .
　保護層６が、ＳｉＡｌＯＮ、ＳｉＣおよびＣＳｉＣの少なくともいずれかよりなる場合、抵抗体層４等をより適切に保護することができる。抵抗体層４の保護に適した硬質な保護層６は、不透明、さらには黒色である場合がある。このような場合、位置確認マーク４５を保護層６から露出させることにより、位置確認マーク４５をサーマルプリントヘッド１０１の外観に明確に現出させることができる。 When the protective layer 6 is made of at least one of SiAlON, SiC, and CSiC, the resistor layer 4 and the like can be more appropriately protected. The hard protective layer 6 suitable for protecting the resistor layer 4 may be opaque or even black. In such a case, by exposing the position confirmation mark 45 from the protective layer 6, the position confirmation mark 45 can be clearly shown on the appearance of the thermal print head 101.
　位置確認マーク４５が、主走査方向部４５１と副走査方向部４５２とを有することにより、位置確認マーク４５のＸ方向位置とＹ方向位置とのそれぞれをより正確に把握することができる。主走査方向部４５１と副走査方向部４５２とを交差させることにより、この交差点を位置決めの基準点として用いることができる。 Since the position confirmation mark 45 has the main scanning direction part 451 and the sub-scanning direction part 452, each of the X direction position and the Y direction position of the position confirmation mark 45 can be grasped more accurately. By intersecting the main scanning direction portion 451 and the sub scanning direction portion 452, this intersection can be used as a positioning reference point.
　本実施形態においては、サーマルプリントヘッド１０１は絶縁層５を備える。絶縁層５は、電極層３および発熱部４１の間に介在している部分を有する。このような構成によると、電極層３と発熱部４１とが接触する領域を小さくすることができる。そうすると、発熱部４１に電流が流れて発熱した際に、電極層３と発熱部４１とが共晶してしまう領域を小さくすることができる。電極層３と発熱部４１とが共晶する領域を小さくできると、サーマルプリントヘッド１０１の使用時に、サーマルプリントヘッド１０１の抵抗値が変化してしまう不具合を抑制できる。 In the present embodiment, the thermal print head 101 includes the insulating layer 5. The insulating layer 5 has a portion interposed between the electrode layer 3 and the heat generating portion 41. According to such a structure, the area | region where the electrode layer 3 and the heat generating part 41 contact can be made small. If it does so, when an electric current will flow into the heat generating part 41 and it heat | fever-generates, the area | region where the electrode layer 3 and the heat generating part 41 eutectic can be made small. If the region where the electrode layer 3 and the heat generating portion 41 are eutectic can be reduced, it is possible to suppress a problem that the resistance value of the thermal print head 101 changes when the thermal print head 101 is used.
　本実施形態においては、絶縁層５は、第１介在部５１と第２介在部５２とを有する。第１介在部５１は、第１導電部３１および発熱部４１の間に介在している。このような構成によると、第１導電部３１と発熱部４１とが共晶することを、抑制できる。本実施形態においては、第２介在部５２は、第２導電部３２および発熱部４１の間に介在している。このような構成によると、第２導電部３２と発熱部４１とが共晶することを、抑制できる。第１導電部３１と発熱部４１とが共晶すること、または、第２導電部３２と発熱部４１とが共晶することを防止できると、電極層３と発熱部４１とが共晶する領域を小さくできる。これにより、サーマルプリントヘッド１０１の使用時に、サーマルプリントヘッド１０１の抵抗値が変化してしまう不具合を抑制できる。 In this embodiment, the insulating layer 5 has a first interposition part 51 and a second interposition part 52. The first interposition part 51 is interposed between the first conductive part 31 and the heat generating part 41. According to such a structure, it can suppress that the 1st electroconductive part 31 and the heat generating part 41 eutectic. In the present embodiment, the second interposition part 52 is interposed between the second conductive part 32 and the heat generating part 41. According to such a structure, it can suppress that the 2nd electroconductive part 32 and the heat generating part 41 eutectic. When the first conductive portion 31 and the heat generating portion 41 are eutectic, or the second conductive portion 32 and the heat generating portion 41 are prevented from eutectic, the electrode layer 3 and the heat generating portion 41 are eutectic. The area can be reduced. Thereby, the malfunction that the resistance value of the thermal print head 101 changes at the time of use of the thermal print head 101 can be suppressed.
　仮に、電極層３が抵抗体層４と蓄熱層２との間に介在している場合には、抵抗体層４における発熱部４１にて発生した熱は、電極層３に逃げてしまうおそれがある。電極層３に逃げてしまった熱は、印刷媒体８０１への伝熱には寄与しない。一方、本実施形態においては、抵抗体層４は、電極層３および蓄熱層２の間に介在している。このような構成によると、抵抗体層４における発熱部４１にて発生した熱が電極層３に伝わっても、電極層３に伝わった熱は、印刷媒体８０１への伝熱に寄与しうる。そのため、発熱部４１にて発生した熱をより効率的に、印刷媒体８０１に伝えることができる。すなわち、サーマルプリントヘッド１０１における印刷媒体８０１に接触する部位（保護層６）を、より速く、高温にすることが可能となる。これにより、印刷媒体８０１への高速印字が可能となる。 If the electrode layer 3 is interposed between the resistor layer 4 and the heat storage layer 2, the heat generated in the heat generating portion 41 in the resistor layer 4 may escape to the electrode layer 3. is there. The heat that has escaped to the electrode layer 3 does not contribute to heat transfer to the print medium 801. On the other hand, in the present embodiment, the resistor layer 4 is interposed between the electrode layer 3 and the heat storage layer 2. According to such a configuration, even if the heat generated in the heat generating portion 41 in the resistor layer 4 is transferred to the electrode layer 3, the heat transferred to the electrode layer 3 can contribute to the heat transfer to the print medium 801. Therefore, the heat generated in the heat generating part 41 can be transmitted to the print medium 801 more efficiently. That is, the portion (protective layer 6) in contact with the print medium 801 in the thermal print head 101 can be heated to a higher temperature faster. Thereby, high-speed printing on the print medium 801 becomes possible.
　本実施形態では、基材１１は、Ｓｉよりなる。Ｓｉは、熱伝導率が大きいため、発熱部４１にて発生した熱を、より速く基材１１の外部（本実施形態では放熱板１３）へと伝えることができる。そのため、高温になった発熱部４１の温度を、より速く、低下させることができる。このことは、印刷媒体８０１への印字の高速化に適する。 In the present embodiment, the base material 11 is made of Si. Since Si has a high thermal conductivity, heat generated in the heat generating portion 41 can be transferred to the outside of the base material 11 (in the present embodiment, the heat radiating plate 13) more quickly. Therefore, the temperature of the heat generating part 41 that has become high can be reduced more quickly. This is suitable for speeding up printing on the print medium 801.
　本実施形態では、保護層６における貫通窓６１は、保護層６’をエッチングすることにより形成される。そうすると、保護層６における所望の部位に貫通窓６１を形成することができるから、電極層３のうち保護層６に覆われていない部分を、封止樹脂８２とは別の樹脂層（ソルダーレジスト層）で覆う必要がない。別の樹脂層（ソルダーレジスト層）を形成する必要がないことは、サーマルプリントヘッド１０１の製造効率の向上を図るのに適する。 In the present embodiment, the through window 61 in the protective layer 6 is formed by etching the protective layer 6 '. Then, since the through window 61 can be formed at a desired site in the protective layer 6, a portion of the electrode layer 3 that is not covered with the protective layer 6 is separated from a resin layer (solder resist) different from the sealing resin 82. Layer). The fact that it is not necessary to form another resin layer (solder resist layer) is suitable for improving the manufacturing efficiency of the thermal print head 101.
　以下の説明では、上記と同一もしくは類似の構成については上記と同一の符号を付し、説明を適宜省略する。 In the following description, the same or similar components as those described above will be denoted by the same reference numerals as those described above, and description thereof will be omitted as appropriate.
　図２７は、位置確認マーク４５の変形例を示している。 FIG. 27 shows a modification of the position confirmation mark 45.
　図２７（ａ）に示す変形例においては、位置確認マーク４５は、主走査方向部４５１および副走査方向部４５２を有しており、主走査方向部４５１と副走査方向部４５２とは互いに交差している。ただし、本例においては、主走査方向部４５１の中央部分と、副走査方向部４５２の一端部分とが交差している。 In the modification shown in FIG. 27A, the position confirmation mark 45 has a main scanning direction portion 451 and a sub scanning direction portion 452, and the main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other. is doing. However, in this example, the central portion of the main scanning direction portion 451 and one end portion of the sub scanning direction portion 452 intersect each other.
　図２７（ｂ）に示す変形例においては、位置確認マーク４５は、２つの主走査方向部４５１および１つの副走査方向部４５２を有しており、２つの主走査方向部４５１と副走査方向部４５２とは互いに交差している。ただし、本例においては、２つの主走査方向部４５１の中央部分と、副走査方向部４５２の両端部分とが交差している。 In the modification shown in FIG. 27B, the position confirmation mark 45 has two main scanning direction portions 451 and one sub scanning direction portion 452, and the two main scanning direction portions 451 and the sub scanning direction. The portion 452 intersects with each other. However, in this example, the center portion of the two main scanning direction portions 451 and the both end portions of the sub scanning direction portion 452 intersect each other.
　図２７（ｃ）に示す変形例においては、位置確認マーク４５は、２つの主走査方向部４５１および２つの副走査方向部４５２を有しており、２つの主走査方向部４５１と２つの副走査方向部４５２とは互いに交差している。ただし、本例においては、２つの主走査方向部４５１の両端部分と、副走査方向部４５２の両端部分とが交差している。これにより、本例の位置確認マーク４５は、矩形状をなしている。 In the modification shown in FIG. 27C, the position confirmation mark 45 has two main scanning direction portions 451 and two sub scanning direction portions 452, and includes two main scanning direction portions 451 and two sub scanning direction portions 451. The scanning direction portion 452 intersects with each other. However, in this example, both end portions of the two main scanning direction portions 451 intersect with both end portions of the sub-scanning direction portion 452. Thereby, the position confirmation mark 45 of this example has a rectangular shape.
　図２７（ｄ）に示す変形例においては、位置確認マーク４５は、１つの主走査方向部４５１と、２つの斜辺部分とを有しており、全体として、三角形状とされている。 In the modification shown in FIG. 27 (d), the position confirmation mark 45 has one main scanning direction portion 451 and two oblique sides, and has a triangular shape as a whole.
　これらの変形例から理解されるように、位置確認マーク４５は、サーマルプリントヘッド１０１のプリンタへの取り付けにおいて、相対的な位置決めを行うための基準となりうるものであれば、その形状は特に限定されない。主走査方向部４５１を有することにより、副走査方向における位置決めをより正確に行うことが可能であり、副走査方向部４５２を有することにより、主走査方向における位置決めを正確に行うことが可能であるが、主走査方向部４５１および副走査方向部４５２を有する構成に限定されるものではない。 As can be understood from these modifications, the position confirmation mark 45 is not particularly limited in shape as long as it can serve as a reference for relative positioning in mounting the thermal print head 101 to the printer. . By having the main scanning direction portion 451, positioning in the sub scanning direction can be performed more accurately, and by having the sub scanning direction portion 452, positioning in the main scanning direction can be performed accurately. However, the configuration is not limited to the configuration having the main scanning direction portion 451 and the sub scanning direction portion 452.
＜第２実施形態＞
　図２８および図２９を用いて、本発明の第２実施形態について説明する。 Second Embodiment
A second embodiment of the present invention will be described with reference to FIGS.
　図２８は、本発明の第２実施形態のサーマルプリントヘッドの要部拡大平面図である。図２９は、図２８のＸＸＩＸ－ＸＩＸＸ線に沿う要部拡大断面図である。 FIG. 28 is an enlarged plan view of a main part of the thermal print head according to the second embodiment of the present invention. FIG. 29 is an enlarged cross-sectional view of a main part along the line XXIX-XIXX in FIG.
　同図に示すサーマルプリントヘッド１０２は、テスト電極層３８をさらに備えている。テスト電極層３８は、位置確認マーク４５に導通している。テスト電極層３８は、電極層３と同じ材質からなり、上述した製造方法において、電極層３と一括して形成される。 The thermal print head 102 shown in the figure further includes a test electrode layer 38. The test electrode layer 38 is electrically connected to the position confirmation mark 45. The test electrode layer 38 is made of the same material as the electrode layer 3, and is formed together with the electrode layer 3 in the above-described manufacturing method.
　テスト電極層３８は、２つの配線部３８１と２つのテスト用パッド３８２とを有する。配線部３８１は、位置確認マーク４５に繋がる部分であり、本実施形態においては、帯状の形状とされている。２つの配線部３８１は、位置確認マーク４５の副走査方向部４５２のＸ方向両端に繋がっている。テスト用パッド３８２は、配線部３８１のうち位置確認マーク４５に繋がる端部とは反対側の端部に繋がっている。テスト用パッド３８２は、配線部３８１より幅が広い部分である。 The test electrode layer 38 has two wiring portions 381 and two test pads 382. The wiring portion 381 is a portion connected to the position confirmation mark 45, and has a strip shape in this embodiment. The two wiring portions 381 are connected to both ends in the X direction of the sub-scanning direction portion 452 of the position confirmation mark 45. The test pad 382 is connected to the end of the wiring portion 381 opposite to the end connected to the position confirmation mark 45. The test pad 382 is a portion wider than the wiring portion 381.
　本実施形態においては、位置確認マーク４５の副走査方向部４５２とテスト電極層３８の配線部３８１とが互いに重なり合っており、これらの間にテスト部５５が介在している。テスト部５５は、上述した絶縁層５と同じ材質からなり、絶縁層５と一括して製造される。テスト部５５は、位置確認マーク４５に対してテスト電極層３８の配線部３８１が位置確認マーク４５の副走査方向部４５２のいずれの箇所に接するかを正確に規定するために設けられている。なお、図２８においては、テスト部５５を省略している。 In this embodiment, the sub-scanning direction part 452 of the position confirmation mark 45 and the wiring part 381 of the test electrode layer 38 overlap each other, and the test part 55 is interposed therebetween. The test part 55 is made of the same material as the insulating layer 5 described above, and is manufactured together with the insulating layer 5. The test portion 55 is provided to accurately define which position of the sub-scanning direction portion 452 of the position confirmation mark 45 the wiring portion 381 of the test electrode layer 38 contacts with the position confirmation mark 45. In FIG. 28, the test unit 55 is omitted.
　図２９に示すように、テスト部５５は、複数の開口５５１を有している。複数の開口５５１は、テスト部５５のうち位置確認マーク４５の副走査方向部４５２と重なる部分に設けられており、副走査方向部４５２の両端に分かれて配置されている。開口５５１内には、配線部３８１の配線部３８１の一部が充填された格好となっている。これにより、テスト電極層３８の配線部３８１は、テスト部５５の開口５５１を通して位置確認マーク４５の副走査方向部４５２に接している。 As shown in FIG. 29, the test unit 55 has a plurality of openings 551. The plurality of openings 551 are provided in a portion of the test portion 55 that overlaps the sub-scanning direction portion 452 of the position confirmation mark 45, and are arranged separately at both ends of the sub-scanning direction portion 452. The opening 551 is filled with a part of the wiring portion 381 of the wiring portion 381. Thereby, the wiring portion 381 of the test electrode layer 38 is in contact with the sub-scanning direction portion 452 of the position confirmation mark 45 through the opening 551 of the test portion 55.
　本実施形態によっても、サーマルプリントヘッド１０２のプリンタに対する取り付け精度を向上させることができる。また、位置確認マーク４５を用いた抵抗値測定を行うことにより、抵抗体層４の抵抗値が適正であるかの診断を行うことができる。たとえば、２つのテスト用パッド３８２に抵抗値測定用の２つのプローブ（図示略）を当接させ、これらのプローブから位置確認マーク４５に電流を流す。これにより、位置確認マーク４５の抵抗値を測定することができる。位置確認マーク４５は、抵抗体層４と一括して形成されているため、材質や厚さが抵抗体層４と同一である。また、位置確認マーク４５は、抵抗体層４と同様に、フォトリソグラフィーを用いたエッチングによってパターニングされている。このため、位置確認マーク４５の平面視寸法は、既知である。このため、測定された位置確認マーク４５の抵抗値が、位置確認マーク４５の材質、厚さおよび平面視寸法から想定される抵抗値に対して適正な値であるかを診断することができる。 Also according to this embodiment, it is possible to improve the mounting accuracy of the thermal print head 102 to the printer. Further, by measuring the resistance value using the position confirmation mark 45, it is possible to diagnose whether the resistance value of the resistor layer 4 is appropriate. For example, two resistance measurement probes (not shown) are brought into contact with two test pads 382, and a current is passed from these probes to the position confirmation mark 45. Thereby, the resistance value of the position confirmation mark 45 can be measured. Since the position confirmation mark 45 is formed together with the resistor layer 4, the material and thickness thereof are the same as those of the resistor layer 4. Further, the position confirmation mark 45 is patterned by etching using photolithography in the same manner as the resistor layer 4. For this reason, the planar view dimension of the position confirmation mark 45 is known. For this reason, it is possible to diagnose whether the measured resistance value of the position confirmation mark 45 is an appropriate value for the resistance value assumed from the material, thickness, and planar size of the position confirmation mark 45.
＜第３実施形態＞
　図３０を用いて、本発明の第３実施形態について説明する。 <Third Embodiment>
A third embodiment of the present invention will be described with reference to FIG.
　図３０は、本発明の第３実施形態のサーマルプリントヘッドの要部拡大平面図である。 FIG. 30 is an enlarged plan view of the main part of the thermal print head according to the third embodiment of the present invention.
　同図に示すサーマルプリントヘッド１０３は、サーマルプリントヘッド１０２と同様に位置確認マーク４５およびテスト電極層３８を有する。本実施形態においては、位置確認マーク４５の主走査方向部４５１と副走査方向部４５２とは、互いに離間しており、互いの間に隙間を隔てて配置されている。より具体的には、本実施形態の主走査方向部４５１は、ｙ方向に離間する２つの領域によって構成されている。副走査方向部４５２は、１つの領域によって構成されている。主走査方向部４５１が２つの領域によって構成されたものであるとの定義により、本実施形態においても、主走査方向部４５１と副走査方向部４５２とは、互いに交差しているといえる。また、主走査方向部４５１と副走査方向部４５２とは、互いの中央部分において交差しているといえる。 The thermal print head 103 shown in the figure has a position confirmation mark 45 and a test electrode layer 38 in the same manner as the thermal print head 102. In the present embodiment, the main scanning direction portion 451 and the sub-scanning direction portion 452 of the position confirmation mark 45 are separated from each other and are disposed with a gap therebetween. More specifically, the main scanning direction portion 451 of the present embodiment is configured by two regions separated in the y direction. The sub-scanning direction part 452 is composed of one area. According to the definition that the main scanning direction portion 451 is constituted by two regions, it can be said that the main scanning direction portion 451 and the sub scanning direction portion 452 also intersect each other in this embodiment. Further, it can be said that the main scanning direction portion 451 and the sub scanning direction portion 452 intersect each other at the center portion.
　本実施形態においても、サーマルプリントヘッド１０３のプリンタに対する取り付け精度を向上させることができる。また、位置確認マーク４５を用いた抵抗値の診断を行うことができる。さらに、本実施形態においては、位置確認マーク４５のうち副走査方向部４５２のみがテスト電極層３８に導通する。副走査方向部４５２は、Ｘ方向に延びる帯状である。このため、位置確認マーク４５のうちテスト電極層３８を介して通電させる部分が、より単純な形状となる。これにより、位置確認マーク４５（副走査方向部４５２）の抵抗値の想定がより容易となる。また、副走査方向部４５２の形状は、抵抗体層４の発熱部４１の形状と類似する。したがって、位置確認マーク４５（副走査方向部４５２）の抵抗値を測定することによって、発熱部４１の抵抗値をより正確に推定することができる。 Also in this embodiment, it is possible to improve the mounting accuracy of the thermal print head 103 to the printer. Further, the resistance value can be diagnosed using the position confirmation mark 45. Furthermore, in the present embodiment, only the sub-scanning direction part 452 of the position confirmation mark 45 is electrically connected to the test electrode layer 38. The sub-scanning direction portion 452 has a strip shape extending in the X direction. Therefore, the portion of the position confirmation mark 45 that is energized through the test electrode layer 38 has a simpler shape. This makes it easier to assume the resistance value of the position confirmation mark 45 (sub-scanning direction portion 452). Further, the shape of the sub-scanning direction portion 452 is similar to the shape of the heat generating portion 41 of the resistor layer 4. Therefore, the resistance value of the heat generating portion 41 can be estimated more accurately by measuring the resistance value of the position confirmation mark 45 (sub-scanning direction portion 452).
　本発明は、上述した実施形態に限定されるものではない。本発明の各部の具体的な構成は、種々に設計変更自在である。 The present invention is not limited to the embodiment described above. The specific configuration of each part of the present invention can be changed in various ways.

Claims (37)

  1. 　半導体よりなる基材と、
    　前記基材に支持され且つ通電によって発熱する発熱部を有する抵抗体層と、
    　前記基材に形成され且つ前記抵抗体層と導通する電極層と、
    　絶縁層と、を備え、
    　前記基材に支持され且つ前記抵抗体層と同じ材質よりなる位置確認マークが形成されている、サーマルプリントヘッド。     A base material made of semiconductor;
    A resistor layer supported by the substrate and having a heat generating portion that generates heat when energized;
    An electrode layer formed on the substrate and electrically connected to the resistor layer;
    An insulating layer;
    A thermal print head in which a position confirmation mark made of the same material as that of the resistor layer is supported by the substrate.
  2. 　前記電極層は、互いに離間する第１導電部および第２導電部を含み、
    　前記発熱部は、前記基材の厚さ方向視において、前記第１導電部および前記第２導電部に跨っている、請求項１に記載のサーマルプリントヘッド。     The electrode layer includes a first conductive portion and a second conductive portion that are separated from each other,
    2. The thermal print head according to claim 1, wherein the heat generating portion straddles the first conductive portion and the second conductive portion in a thickness direction view of the base material.
  3. 　前記絶縁層は、前記電極層および前記発熱部の間に介在している部分を有する、請求項２に記載のサーマルプリントヘッド。 The thermal print head according to claim 2, wherein the insulating layer has a portion interposed between the electrode layer and the heat generating portion.
  4. 　前記絶縁層は、第１介在部と第２介在部とを有し、
    　前記第１介在部は、前記第１導電部および前記発熱部の間に介在しており、
    　前記第２介在部は、前記第２導電部および前記発熱部の間に介在している、請求項３に記載のサーマルプリントヘッド。     The insulating layer has a first interposition part and a second interposition part,
    The first interposed portion is interposed between the first conductive portion and the heat generating portion,
    The thermal print head according to claim 3, wherein the second interposition part is interposed between the second conductive part and the heat generating part.
  5. 　前記絶縁層は、前記基材の厚さ方向視において、前記第１介在部と前記第２介在部とに挟まれた中間部を有し、
    　前記中間部は、前記第１介在部および前記第２介在部につながっている、請求項４に記載のサーマルプリントヘッド。     The insulating layer has an intermediate portion sandwiched between the first interposed portion and the second interposed portion in the thickness direction of the base material,
    The thermal print head according to claim 4, wherein the intermediate portion is connected to the first interposed portion and the second interposed portion.
  6. 　前記第１介在部には、第１開口が形成されており、
    　前記発熱部は、前記第１導電部の一部に直接接する第１当接部を有し、
    　前記第１当接部は、前記基材の厚さ方向視において、前記第１開口と重なる位置に位置している、請求項４または請求項５に記載のサーマルプリントヘッド。     A first opening is formed in the first interposition part,
    The heat generating portion has a first contact portion that is in direct contact with a part of the first conductive portion,
    6. The thermal print head according to claim 4, wherein the first contact portion is located at a position overlapping the first opening in the thickness direction of the base material.
  7. 　前記第１導電部の一部は、前記第１開口内に形成されている、請求項６に記載のサーマルプリントヘッド。 The thermal print head according to claim 6, wherein a part of the first conductive part is formed in the first opening.
  8. 　前記第２介在部には、第２開口が形成されており、
    　前記発熱部は、前記第２導電部の一部に直接接する第２当接部を有し、
    　前記第２当接部は、前記基材の厚さ方向視において、前記第２開口と重なる位置に位置している、請求項４ないし請求項７のいずれかに記載のサーマルプリントヘッド。     A second opening is formed in the second interposition part,
    The heat generating portion has a second contact portion that is in direct contact with a part of the second conductive portion,
    The thermal print head according to any one of claims 4 to 7, wherein the second contact portion is located at a position overlapping the second opening in the thickness direction of the base material.
  9. 　前記第２導電部の一部は、前記第２開口内に形成されている、請求項８に記載のサーマルプリントヘッド。 The thermal print head according to claim 8, wherein a part of the second conductive portion is formed in the second opening.
  10. 　前記抵抗体層は、前記第２導電部の位置する側とは反対側を向く第１端面を有し、
    　前記絶縁層は、前記第１介在部につながり且つ前記第１端面を覆う部分を含む、請求項４ないし請求項９のいずれかに記載のサーマルプリントヘッド。     The resistor layer has a first end surface facing a side opposite to a side where the second conductive portion is located,
    10. The thermal print head according to claim 4, wherein the insulating layer includes a portion connected to the first interposed portion and covering the first end surface.
  11. 　前記抵抗体層は、前記第１導電部の位置する側とは反対側を向く第２端面を有し、
    　前記絶縁層は、前記第２介在部につながり且つ前記第２端面を覆う部分を含む、請求項１０に記載のサーマルプリントヘッド。     The resistor layer has a second end surface facing a side opposite to a side where the first conductive portion is located,
    The thermal print head according to claim 10, wherein the insulating layer includes a portion connected to the second interposed portion and covering the second end surface.
  12. 　前記抵抗体層および前記位置確認マークと前記基板との間に介在する蓄熱層を備える、請求項１ないし１１のいずれかに記載のサーマルプリントヘッド。 The thermal print head according to any one of claims 1 to 11, further comprising a heat storage layer interposed between the resistor layer and the position confirmation mark and the substrate.
  13. 　前記抵抗体層および前記位置確認マークは、前記蓄熱層に直接接している、請求項１２に記載のサーマルプリントヘッド。 The thermal print head according to claim 12, wherein the resistor layer and the position confirmation mark are in direct contact with the heat storage layer.
  14. 　前記抵抗体層、前記電極層および前記絶縁層を覆う保護層を更に備えており、
    　前記位置確認マークは、前記保護層から露出している、請求項１ないし１３のいずれかに記載のサーマルプリントヘッド。     A protective layer covering the resistor layer, the electrode layer and the insulating layer;
    The thermal print head according to claim 1, wherein the position confirmation mark is exposed from the protective layer.
  15. 　前記保護層は、不透明である、請求項１４に記載のサーマルプリントヘッド。 The thermal print head according to claim 14, wherein the protective layer is opaque.
  16. 　前記保護層は、黒色である、請求項１５に記載のサーマルプリントヘッド。 The thermal print head according to claim 15, wherein the protective layer is black.
  17. 　前記保護層は、ＳｉＡｌＯＮ、ＳｉＣおよびＣＳｉＣの少なくともいずれかよりなる、請求項１６に記載のサーマルプリントヘッド。 The thermal print head according to claim 16, wherein the protective layer is made of at least one of SiAlON, SiC, and CSiC.
  18. 　前記位置確認マークは、主走査方向に延びる主走査方向部と、副走査方向に延びる副走査方向部と、を有する、請求項１ないし１７のいずれかに記載のサーマルプリントヘッド。 18. The thermal print head according to claim 1, wherein the position confirmation mark has a main scanning direction portion extending in the main scanning direction and a sub scanning direction portion extending in the sub scanning direction.
  19. 　前記主走査方向部と前記副走査方向部とは、互いに交差している、請求項１８に記載のサーマルプリントヘッド。 The thermal print head according to claim 18, wherein the main scanning direction portion and the sub scanning direction portion intersect each other.
  20. 　前記主走査方向部と前記副走査方向部とは、互いの中央部分において交差している、請求項１９に記載のサーマルプリントヘッド。 The thermal print head according to claim 19, wherein the main scanning direction portion and the sub-scanning direction portion intersect at a center portion of each other.
  21. 　前記位置確認マークに導通するテスト電極層を備える、請求項１８ないし２０のいずれかに記載のサーマルプリントヘッド。 The thermal print head according to any one of claims 18 to 20, further comprising a test electrode layer electrically connected to the position confirmation mark.
  22. 　前記テスト電極層は、前記電極層と同じ材質よりなる、請求項２１に記載のサーマルプリントヘッド。 The thermal print head according to claim 21, wherein the test electrode layer is made of the same material as the electrode layer.
  23. 　前記テスト電極層は、前記位置確認マークに繋がる配線部と、この配線部に繋がるテスト用パッド部と、を含む、請求項２２に記載のサーマルプリントヘッド。 The thermal print head according to claim 22, wherein the test electrode layer includes a wiring part connected to the position confirmation mark and a test pad part connected to the wiring part.
  24. 　前記配線部は、前記副走査方向部の副走査方向両端に繋がっている、請求項２３に記載のサーマルプリントヘッド。 The thermal print head according to claim 23, wherein the wiring portion is connected to both ends of the sub-scanning direction portion in the sub-scanning direction.
  25. 　前記副走査方向部と前記主走査方向部とは、互いに離間している、請求項２４に記載のサーマルプリントヘッド。 The thermal print head according to claim 24, wherein the sub-scanning direction portion and the main scanning direction portion are separated from each other.
  26. 　配線基板と、
    　複数のワイヤと、
    　前記配線基板、前記複数のワイヤ、および、前記保護層を覆う樹脂層と、を更に備える、請求項１ないし２５のいずれかに記載のサーマルプリントヘッド。     A wiring board;
    Multiple wires,
    26. The thermal print head according to claim 1, further comprising: a resin layer that covers the wiring board, the plurality of wires, and the protective layer.
  27. 　前記保護層には、貫通窓が形成されており、
    　前記電極層は、前記貫通窓から露出するボンディング部を含み、
    　前記ボンディング部には、前記複数のワイヤのいずれかがボンディングされている、請求項２６に記載のサーマルプリントヘッド。     In the protective layer, a through window is formed,
    The electrode layer includes a bonding portion exposed from the through window,
    27. The thermal print head according to claim 26, wherein any of the plurality of wires is bonded to the bonding portion.
  28. 　前記樹脂層は、前記保護層に直接接している、請求項２６または請求項２７に記載のサーマルプリントヘッド。 28. The thermal print head according to claim 26, wherein the resin layer is in direct contact with the protective layer.
  29. 　前記電極層に電流を流す駆動ＩＣを更に備え、前記駆動ＩＣは、前記配線基板に搭載されている、請求項２６ないし請求項２８のいずれかに記載のサーマルプリントヘッド。 The thermal print head according to any one of claims 26 to 28, further comprising a drive IC for passing a current to the electrode layer, wherein the drive IC is mounted on the wiring board.
  30. 　前記絶縁層は、ＳｉＯ2またはＳｉＡｌＯ2よりなる、請求項１ないし請求項２９のいずれかに記載のサーマルプリントヘッド。 30. The thermal print head according to claim 1, wherein the insulating layer is made of SiO 2 or SiAlO 2 .
  31. 　前記抵抗体層は、ポリシリコン、ＴａＳｉＯ2、および、ＴｉＯＮの少なくともいずれ
    かよりなる、請求項１ないし請求項３０のいずれかに記載のサーマルプリントヘッド。     It said resistor layer, polysilicon, TaSiO 2, and become more at least one of TiON, thermal print head according to any one of claims 1 to 30.
  32. 　前記電極層は、Ａｕ、Ａｇ、Ｃｕ、Ｃｒ、Ａｌ－Ｓｉ、および、Ｔｉの少なくともいずれかよりなる、請求項１ないし請求項３１のいずれかに記載のサーマルプリントヘッド。 32. The thermal print head according to claim 1, wherein the electrode layer is made of at least one of Au, Ag, Cu, Cr, Al—Si, and Ti.
  33. 　前記電極層は、前記発熱部に直接接するバリアメタル層を含む、請求項１ないし３２のいずれかに記載のサーマルプリントヘッド。 The thermal print head according to any one of claims 1 to 32, wherein the electrode layer includes a barrier metal layer in direct contact with the heat generating portion.
  34. 　請求項１ないし３３のいずれかに記載のサーマルプリントヘッドの製造方法であって、
    　前記基材に前記抵抗体層と前記位置確認マークとを一括して形成する工程と、
    　前記基材に前記電極層を形成する工程と、を備える、サーマルプリントヘッドの製造方法。     A method for manufacturing a thermal print head according to any one of claims 1 to 33, comprising:
    Forming the resistor layer and the position confirmation mark collectively on the substrate;
    And a step of forming the electrode layer on the substrate.
  35. 　前記抵抗体層を形成する工程は、ＣＶＤまたはスパッタにより行う、請求項３４に記載のサーマルプリントヘッドの製造方法。 The method of manufacturing a thermal print head according to claim 34, wherein the step of forming the resistor layer is performed by CVD or sputtering.
  36. 　前記抵抗体層は、ポリシリコン、ＴａＳｉＯ2、および、ＴｉＯＮの少なくともいずれかよりなる、請求項３４または３５に記載のサーマルプリントヘッドの製造方法。 36. The method of manufacturing a thermal print head according to claim 34, wherein the resistor layer is made of at least one of polysilicon, TaSiO 2 , and TiON.
  37. 　前記電極層を形成する工程は、ＣＶＤまたはスパッタにより行う、請求項３４ないし３６のいずれかに記載のサーマルプリントヘッドの製造方法。 37. The method of manufacturing a thermal print head according to claim 34, wherein the step of forming the electrode layer is performed by CVD or sputtering.
PCT/JP2016/059312 2015-03-27 2016-03-24 Thermal print head and method for manufacturing thermal print head WO2016158643A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000013907A1 (en) * 1998-09-09 2000-03-16 Rohm Co., Ltd. Thermal printhead
JP2001219590A (en) * 2000-02-14 2001-08-14 Rohm Co Ltd Thermal printing head and its manufacturing method
JP2012066461A (en) * 2010-09-22 2012-04-05 Seiko Instruments Inc Head unit, printer and method of manufacturing head unit
JP2013230581A (en) * 2012-04-27 2013-11-14 Rohm Co Ltd Thermal print head and method of manufacturing thermal print head

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000013907A1 (en) * 1998-09-09 2000-03-16 Rohm Co., Ltd. Thermal printhead
JP2001219590A (en) * 2000-02-14 2001-08-14 Rohm Co Ltd Thermal printing head and its manufacturing method
JP2012066461A (en) * 2010-09-22 2012-04-05 Seiko Instruments Inc Head unit, printer and method of manufacturing head unit
JP2013230581A (en) * 2012-04-27 2013-11-14 Rohm Co Ltd Thermal print head and method of manufacturing thermal print head

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