WO2016150040A1 - 一种阵列基板及显示装置 - Google Patents

一种阵列基板及显示装置 Download PDF

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WO2016150040A1
WO2016150040A1 PCT/CN2015/084336 CN2015084336W WO2016150040A1 WO 2016150040 A1 WO2016150040 A1 WO 2016150040A1 CN 2015084336 W CN2015084336 W CN 2015084336W WO 2016150040 A1 WO2016150040 A1 WO 2016150040A1
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width
ratio
tft channel
pixel unit
length
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French (fr)
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刘旭
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to US14/913,328 priority Critical patent/US10018878B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134327—Segmented, e.g. alpha numeric display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/52—RGB geometrical arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Definitions

  • the present invention relates to the field of electronic technologies, and in particular, to an array substrate and a display device.
  • a liquid crystal display is mainly composed of a TFT (Thin Film Transistor) array substrate and a color filter substrate, wherein an R (red) pixel and a G are disposed on the liquid crystal display behind the box by the TFT array substrate and the color filter substrate.
  • (green) pixel and B (blue) pixel wherein, as shown in FIG. 1, the VT curve of the R pixel (ie, the driving voltage-light transmittance curve) is a; the VT curve of the G pixel is b; B The VT curve of the pixel is c.
  • the curve a and the curve b substantially coincide.
  • the curve a and the curve b reach the peak almost simultaneously, and the peak of the curve c is located at the peak of the curve a and the peak of the curve b. That is to say, under the same driving voltage, the light transmittance of the B pixel is larger than the light transmittance of the R pixel and the G pixel, so that the liquid crystal display panel is displayed at the same driving voltage. Since the light transmittance of the three pixels of RGB is different, the liquid crystal display generates a color shift phenomenon, which affects the image quality of the liquid crystal display.
  • Embodiments of the present invention provide an array substrate and a display device, which improve the problem of color shift phenomenon of the display device to a certain extent, and improve the image quality of the display device.
  • an embodiment of the present invention provides an array substrate, where the array substrate includes a first pixel unit, a second pixel unit, and a third pixel unit, which are divided by gate lines and data lines disposed at intersections.
  • the first pixel unit may correspond to a red color resist, and the first pixel unit includes a first TFT channel formed between a source and a drain of the first TFT;
  • the second pixel unit may correspond to a green color resist, and the second pixel unit includes a second TFT channel formed between a source and a drain of the second TFT;
  • the third pixel unit may correspond to a blue color resistance, and the third pixel unit includes a third TFT channel formed between a source and a drain of the third TFT;
  • the ratio of the width to the length of the third TFT channel is greater than the ratio of the width to the length of the second TFT channel; or the ratio of the width to the length of the third TFT channel is greater than the first The ratio of the width to the length of the TFT channel.
  • a ratio of a width to a length of the third TFT channel is greater than a ratio of a width to a length of the second TFT channel; and a width and a length of the third TFT channel The ratio is greater than the ratio of the width to the length of the first TFT channel.
  • a ratio of a width to a length of the third TFT channel is greater than a ratio of a width to a length of the first TFT channel; and a width of the first TFT channel is The ratio of the length is greater than the ratio of the width to the length of the second TFT channel.
  • the first pixel unit may further include at least two first strip electrodes having a first slit between the first strip electrodes; and the second pixel unit may further include at least two a second strip electrode having a second slit between the second strip electrodes; the third pixel unit further comprising at least two third strip electrodes, the third strip electrode having a first Three-seam
  • the ratio of the third slit width to the third strip electrode width may be greater than a ratio of the first slit width to the first strip electrode width, or the third slit width
  • the ratio of the width of the third strip electrode may be greater than the ratio of the second slit width to the second strip electrode width.
  • a ratio of the third slit width to the third strip electrode width is greater than a ratio of the first slit width to the first strip electrode width, and The ratio of the width of the three slits to the width of the third strip electrode is greater than the ratio of the width of the second slit to the width of the second strip electrode.
  • a ratio of the third slit width to the third strip electrode width is greater than a ratio of the first slit width to the first strip electrode width, and The ratio of the width of the slit to the width of the first strip electrode is greater than the ratio of the width of the second slit to the width of the second strip electrode.
  • each of the width of the first TFT channel, the width of the second TFT channel, and the width of the third TFT channel may be 5 ⁇ m to 35 ⁇ m;
  • the length of each of the first TFT channel, the length of the second TFT channel, and the length of the third TFT channel may be 2 ⁇ m to 8 ⁇ m;
  • each of the first strip electrode width, the second strip electrode width, and the third strip electrode width may range from 2 ⁇ m to 8 ⁇ m;
  • Each of the slit width, the second slit width, and the third slit width may be from 1 ⁇ m to 5 ⁇ m.
  • the array substrate further includes a fourth pixel unit, the fourth pixel unit may correspond to a white color resistance, and the fourth pixel unit includes a source and a drain of the fourth TFT. a fourth TFT channel formed therebetween; wherein a ratio of a width to a length of the fourth TFT channel may be greater than a ratio of a width to a length of the first TFT channel, and a width of the second TFT channel a ratio of the length, and a ratio of a width to a length of the third TFT channel.
  • the fourth pixel unit may further include at least two fourth strip electrodes, a fourth slit between the fourth strip electrodes; the fourth slit width and the a ratio of the width of the fourth strip electrode may be greater than a ratio of the first slit width to the width of the first strip electrode, a ratio of the second slit width to the width of the second strip electrode, Any one of a ratio of the third slit width to the third strip electrode width.
  • the present invention provides a display device, which can include an array substrate as described in any of the various possible embodiments described above.
  • Embodiments of the present invention provide an array substrate and a display device, wherein a first pixel unit in the array substrate may correspond to a red color resist, and the first pixel unit includes a source formed between a source and a drain of the first TFT.
  • a first TFT channel a second pixel unit may correspond to a green color resist
  • the second pixel unit includes a second TFT channel formed between a source and a drain of the second TFT
  • the third pixel unit may be blue
  • the third pixel unit includes a third TFT channel formed between the source and the drain of the third TFT; wherein a ratio of a width to a length of the third TFT channel is greater than the second a ratio of a width to a length of the TFT channel; or a ratio of a width to a length of the third TFT channel is greater than a ratio of a width to a length of the first TFT channel, such that at the same driving voltage Since the ratio of the width to the length of the third TFT channel corresponding to the blue color resistance (ie, the width to length ratio of the third TFT channel) is increased, the charge and discharge rate of the storage capacitor in the third TFT is increased, and the liquid crystal is accelerated.
  • Molecules in the third pixel unit Deflecting, thereby increasing the light transmittance of the third pixel unit corresponding to the blue color resistance at the driving voltage, so as to ensure that the three pixels of RGB achieve the same light transmittance as much as possible under the same driving voltage, thereby reducing
  • the color shift phenomenon improves the image quality of the display device.
  • 1 is a driving voltage-light transmittance curve of three pixels of RGB in the prior art
  • FIG. 2 is a schematic diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a TFT in an array substrate according to an embodiment of the present invention.
  • RGB 4 is a histogram of light transmittance of three color resistances of RGB
  • FIG. 5 is a graph showing driving voltage-light transmittance change curves of three pixels of RGB according to an embodiment of the present invention
  • FIG. 6 is a schematic diagram of an array substrate according to another embodiment of the present invention.
  • FIG. 7 is a schematic diagram of an array substrate according to another embodiment of the present invention.
  • first and second are used for descriptive purposes only, and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly. In the description of the present invention, "a plurality” means two or more unless otherwise stated.
  • An embodiment of the present invention provides an array substrate, as shown in FIG. 2, including a first pixel unit 21 and a second pixel sheet divided by gate lines 11 and data lines 12 disposed at intersections. Element 22 and third pixel unit 23.
  • the first pixel unit 21 may correspond to a red color resist
  • the first pixel unit 21 includes a first TFT channel 41 formed between a source and a drain of the first TFT 31
  • the second pixel unit 22 may be colored with a green color
  • the second pixel unit 22 includes a second TFT channel 42 formed between the source and the drain of the second TFT 32
  • the third pixel unit 23 may correspond to the blue color resistance
  • the third pixel unit 23 includes the third A third TFT channel 43 is formed between the source and the drain of the TFT 33.
  • the color resists referred to herein refer to materials that have a transmittance for light of a particular wavelength while blocking light of other wavelengths.
  • the red color resist can absorb visible light of other wavelengths only by the light of the red wavelength; the green color resist can absorb the visible light of other wavelengths only by the light of the green wavelength; the blue color resist can transmit only the light of the blue wavelength It absorbs visible light at other wavelengths.
  • FIG. 3 a schematic structural view of an arbitrary TFT (for example, the first TFT 31, the second TFT 32, or the third TFT 33 in FIG. 2) is shown, including a gate electrode 101, a source electrode 102, and a drain electrode 103.
  • a TFT channel for example, the first TFT channel 41, the second TFT channel 42 or the third TFT channel 43 in FIG. 2
  • TFT The width W of the channel may be the length of the opposite side of the source 102 and the drain 103.
  • the length L of the TFT channel may be the relative distance between the source 102 and the drain 103.
  • the aspect ratio of the TFT channel may be TFT.
  • the ratio of the width W of the channel to the length L of the TFT channel may be TFT.
  • the ratio of the width to the length of the third TFT channel 43 is greater than the ratio of the width to the length of the second TFT channel 42 (ie, W2/L2); or, the third The ratio of the width to the length of the TFT channel 43 is larger than the ratio of the width to the length of the first TFT channel 41 (ie, W1/L1), that is, W3/L3>W2/L2, or W3/L3>W1/L1.
  • the working principle of the array substrate is: controlling the opening and closing of each TFT through the gate line 11 and the data line 12, writing an image signal to the corresponding pixel unit, and driving the first pixel unit 21 and the second pixel unit 22 respectively.
  • the liquid crystal molecules in the third pixel unit 23 finally achieving display.
  • the first pixel unit 21, the second pixel unit 22, and the third pixel unit 23 respectively correspond to color resistances of three different colors of R (red), G (green), and B (blue) in the color filter substrate.
  • the color resistance of different colors is different under the same conditions. As shown in Figure 4, the blue color resistance is lower than the red color and green color resistance under the same color resistance value. Therefore, as shown in FIG.
  • W3/L3>W2/L2, or W3/L3>W1/L1 is set, so that the calculation formula of the on-state current is: Where Ion is the on-state current, ⁇ is the carrier mobility, C is the TFT gate capacitance, W is the width of the TFT channel, L is the length of the TFT channel, Vg is the TFT gate forward voltage, and Vt is TFT threshold voltage. It can be seen from the equation that, with other parameters unchanged, the on-state current increases as the width-to-length ratio (ie, W/L) of the TFT channel increases.
  • the embodiment of the present invention increases the third pixel unit 23 by setting the width-to-length ratio W3/L3 of the third TFT channel 43 corresponding to the blue color resist to be greater than W2/L2, or W3/L3 is greater than W1/L1.
  • the on-state current increases the charge and discharge rate of the storage capacitor in the third TFT 33, accelerates the deflection of the liquid crystal molecules in the third pixel unit 23, and further increases the blue pixel in the third pixel unit 23 at the driving voltage.
  • Light transmittance such that, as shown in FIG. 5, when three pixels of RGB are at the same driving voltage, the VT curve c' of the B pixel and the curve a and the pixel curve b of the R pixel substantially coincide, and three RGB are guaranteed.
  • the pixel simultaneously obtains the maximum light transmittance and reduces the color shift phenomenon.
  • the length L3 of the third TFT channel 43 is reduced such that L3 ⁇ L2, or L3 ⁇ L1.
  • the width W3 of the third TFT channel 43 is increased such that W3 > W2, or W3 > W1.
  • the pixel electrode (connected to the drain of the TFT in the pixel unit) may be included in the embodiment of the present invention. It is of course possible to further comprise a common electrode (connected to the common electrode line for forming an electric field for driving the liquid crystal with the pixel electrode). Both the pixel electrode and the common electrode may comprise at least two strip electrodes.
  • the strip electrode is used as a pixel electrode, for example.
  • the first pixel unit 21 may further include at least two first strip electrodes 202, and a first slit 201 disposed between the first strip electrodes 202;
  • the second pixel unit 22 The second strip electrode 212 may also include at least two second strip electrodes 212 and a second slit electrode 211 disposed between the second strip electrodes 212;
  • the third pixel unit 23 may further include at least two third strip electrodes 222, and A third slit 221 is disposed between the third strip electrodes 222.
  • first strip electrode 202, the second strip electrode 212, and the third strip electrode 222 may also be common electrodes, which are not limited in the present invention.
  • the ratio of the third slit width D3 to the third strip electrode width S3 may be greater than the ratio of the first slit width D1 to the first strip electrode width S1 (ie, D1/S1), or The ratio of the third slit width D3 to the third strip electrode width S3 (ie, D3/S3) may be greater than the ratio of the second slit width D2 to the second strip electrode width S2 (ie, D2/S2).
  • the VT curve of the B pixel in the third pixel unit 23 can be shifted to the left to obtain a curve c', so that the curve a, the curve b and the curve c' are close to coincide, also That is to say, the curve a, the curve b and the curve c' substantially reach the peak at the same driving voltage at the same driving voltage (that is, at the same driving voltage, the three pixels of RGB simultaneously obtain the maximum light transmittance).
  • the array substrate provided by the present invention can reduce the driving voltage corresponding to the driving voltage of the B pixel to obtain the maximum light transmittance and the driving voltage corresponding to the maximum light transmittance of the G pixel by setting D3/S3>D2/S2.
  • the absolute value of the difference, or by setting D3/S3>D1/S1 the driving voltage corresponding to the B pixel to obtain the maximum light transmittance and the driving corresponding to the maximum light transmittance of the R pixel can be reduced.
  • the three-seam width D3 is such that D3>D2, or D3>D1.
  • the third strip electrode width S3 is decreased such that S3 ⁇ S2, or S3 ⁇ S1.
  • first strip electrode 202, the second strip electrode 212, and the third strip electrode 222 shown in FIG. 6 are exemplarily illustrated as an example, specifically, the first strip The electrode 202, the second strip electrode 212, and the third strip electrode 222 may be parallel to each other, wherein the first strip electrode 202, the second strip electrode 212, and the third strip electrode 222 may both be parallel to the data line 12.
  • the ratio of the width to the length of the third TFT channel 43 may be greater than the ratio of the width to the length of the second TFT channel 42; and, the third TFT channel 43
  • the ratio of the width to the length is larger than the ratio of the width to the length of the first TFT channel 41, that is, W3/L3>W2/L2, and W3/L3>W1/L1.
  • the light transmittance of the blue color resist corresponding to the third pixel unit 23 is smaller than the light transmittance of the red color resist corresponding to the first pixel unit 21, and is smaller than the light transmittance of the green color resist corresponding to the second pixel unit 22. Rate, therefore, by setting W3/L3>W2/L2, and W3/L3>W1/L1, the light transmittance of the blue pixel is greater than the light transmittance of the red pixel, and the light transmittance of the blue pixel is The overshoot is also greater than the light transmittance of the green pixel, thereby further ensuring that at the same driving voltage, the three RGB pixels simultaneously obtain the maximum light transmittance.
  • the ratio of the third slit width D3 to the third strip electrode width S3 may be set to be larger than the ratio of the first slit width D1 to the first strip electrode width S1, and the third slit width D3 and the third The ratio of the strip electrode width S3 is greater than the ratio of the second slit width D2 to the second strip electrode width S2, that is, D3/S3>D1/S1, and D3/S3>D2/S2.
  • the light transmittance of the blue color resist corresponding to the third pixel unit 23 is smaller than the light transmittance of the red color resist corresponding to the first pixel unit 21, and the red color corresponding to the first pixel unit 21
  • the light transmittance of the resist is smaller than the light transmittance of the green color resist corresponding to the second pixel unit 22, and therefore, the ratio of the width to the length of the third TFT channel 43 can be set larger than the width of the first TFT channel 41.
  • the ratio of the width to the length of the first TFT channel 41 is greater than the ratio of the width to the length of the second TFT channel 42, that is, W3/L3>W1/L1>W2/L2, such that the blue pixel Light
  • the transmittance is greater than the light transmittance of the red pixel, and the light transmittance of the red pixel is greater than the light transmittance of the green pixel to further ensure that the maximum light transmittance of the three pixels of RGB is simultaneously obtained under the same driving voltage.
  • the ratio of the third slit width D3 to the third strip electrode width S3 may be set to be larger than the ratio of the first slit width D1 to the first strip electrode width S1, and the first slit width D1 and the first The ratio of the strip electrode width S1 is greater than the ratio of the second slit width D2 to the second strip electrode width S2, that is, D3/S3>D1/S1>D2/S2.
  • each of the width of the first TFT channel 41, the width of the second TFT channel 42 and the width of the third TFT channel 43 may range from 5 ⁇ m to 35 ⁇ m; the first TFT channel 41 The length, the length of the second TFT channel 42 and the length of the third TFT channel 43 may range from 2 ⁇ m to 8 ⁇ m.
  • the first strip electrode width, the second strip electrode width, and the third strip electrode width may range from 2 ⁇ m to 8 ⁇ m; the first slit width, the second slit width, and the third slit width may range from 1 ⁇ m to 5 ⁇ m.
  • the width to length ratio W3/L3 of the third TFT channel 43 is set to 14 um/5 um
  • the width to length ratio of the first TFT channel 41 is 12 um/5 um
  • the width to length ratio of the second TFT channel 42 is W2.
  • /L2 is 10 um/5 um, and it can be seen that since W3/L3>W1/L1>W2/L2, the charge and discharge rate of the storage capacitor in the third TFT 33 is increased, and the deflection of the liquid crystal molecules in the third pixel unit 23 is accelerated.
  • W3/L3>W1/L1>W2/L2 the charge and discharge rate of the storage capacitor in the third TFT 33 is increased, and the deflection of the liquid crystal molecules in the third pixel unit 23 is accelerated.
  • further increasing the light transmittance of the blue pixel in the third pixel unit 23 at the driving voltage such that, as shown in FIG.
  • the array substrate provided by the embodiment of the present invention may further include a fourth pixel unit 24, where the fourth pixel unit 24 may correspond to a white color resistance, and the fourth pixel unit 24 is It may further include at least two fourth strip electrodes 232, a fourth slit 231 between the fourth strip electrodes 232, and a fourth TFT channel 44 formed between the source and the drain of the fourth TFT 34. ;
  • the width of the fourth TFT channel 44 in the fourth pixel unit 24 can be set.
  • the ratio of the length (ie, W4/L4) is an arbitrary value
  • the ratio of the fourth slit width to the fourth strip electrode width is an arbitrary value.
  • the fourth TFT channel 44 is set to have a width ranging from 5 ⁇ m to 35 ⁇ m; the fourth TFT channel 44 has a length ranging from 2 ⁇ m to 8 ⁇ m; the fourth strip electrode has a width ranging from 2 ⁇ m to 8 ⁇ m; and the fourth slit width is in the range of 1 ⁇ m to 5 ⁇ m.
  • the ratio of the width to the length of the fourth TFT channel 44 may be set, which is greater than the ratio of the width to the length of the first TFT channel 41 (ie, W1/L1). And a ratio of a width to a length of the second TFT channel 42 (ie, W2/L2), and a ratio of a width to a length of the third TFT channel 43 (ie, W3/L3).
  • the characteristics of the TFT corresponding to the fourth pixel unit can be further optimized, which is advantageous for improving the charging efficiency of the pixel unit and further improving the transmittance of the white pixel.
  • a ratio of the fourth slit width to the fourth strip electrode width may be set, which is greater than the ratio of the first slit width and the first strip electrode width (ie, D1/S1), and the second Any one of a ratio of the slit width to the width of the second strip electrode (ie, D2/S2), a ratio of the third slit width to the width of the third strip electrode (ie, D3/S3).
  • the lateral electric field and the liquid crystal rotation efficiency driven by the electric field can be further optimized, which is advantageous for realizing a display screen with higher brightness, and thus, for the predetermined brightness of the display device, the brightness of the backlight can be reduced while still being reduced. Obtaining the predetermined brightness is advantageous for energy saving of the display device.
  • the embodiment of the invention further provides a display device comprising any one of the above array substrates.
  • the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any product or component having a display function.
  • Embodiments of the present invention provide an array substrate and a display device, wherein a first pixel unit in the array substrate can correspond to a red color resist, and the first pixel unit includes a source formed between a source and a drain of the first TFT.
  • the second pixel unit may correspond to a green color resist
  • the second pixel unit includes a second TFT channel formed between a source and a drain of the second TFT
  • the third pixel unit may be blue
  • the third pixel unit includes a third TFT channel formed between the source and the drain of the third TFT; wherein a ratio of a width to a length of the third TFT channel is greater than the second a ratio of a width of the TFT channel to the length; or a ratio of a width to a length of the third TFT channel is greater than a ratio of a width to a length of the first TFT channel, such that the phase Under the same driving voltage, the ratio of the width to the length of the third TFT channel corresponding to the blue color resistance (ie, the width to length ratio of the third TFT channel) is increased, so that the storage capacitor in the third TFT is charged and discharged.
  • the rate is increased to accelerate the deflection of the liquid crystal molecules in the third pixel unit, thereby increasing the light transmittance of the third pixel unit corresponding to the blue color resistance at the driving voltage, so as to ensure that the three pixels of RGB are under the same driving voltage. It is possible to achieve a similar light transmittance, thereby reducing the color shift phenomenon and improving the image quality of the display device.

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Abstract

一种阵列基板及显示装置，包括：第一像素单元（21）与红色色阻对应，第一像素单元（21）中包括第一TFT（31）的源极（102）与漏极（103）之间形成的第一TFT沟道（41）；第二像素单元（22）与绿色色阻对应，第二像素单元（22）中包括第二TFT（32）的源极（102）与漏极（103）之间形成的第二TFT沟道（42）；第三像素单元（23）与蓝色色阻对应，第三像素单元（23）中包括第三TFT（33）的源极（102）与漏极（103）之间形成的第三TFT沟道（43）；其中，第三TFT沟道（43）的宽度与长度的比值大于第二TFT沟道（42）的宽度与长度的比值；或者，第三TFT沟道（43）的宽度与长度的比值大于第一TFT沟道（41）的宽度与长度的比值。该阵列基板及显示装置一定程度减小了显示装置产生的色偏问题。

Description

一种阵列基板及显示装置 技术领域
本发明涉及电子技术领域，尤其涉及一种阵列基板及显示装置。
背景技术
液晶显示器(Liquid Crystal Display，LCD)主要由TFT(薄膜晶体管)阵列基板和彩膜基板构成，其中，由TFT阵列基板和彩膜基板对盒后的液晶显示器上设有R(红色)像素、G(绿色)像素和B(蓝色)像素，其中，如图1所示，即R像素的VT曲线(即驱动电压-光透过率变化曲线)为a；G像素的VT曲线为b；B像素的VT曲线为c。
可以看出，曲线a与曲线b基本重合，尤其的，在同一驱动电压下，曲线a、曲线b几乎同时达到波峰，而曲线c的波峰却位于曲线a的波峰和曲线b的波峰的右侧，也就是说，在同一驱动电压下，B像素的光透过率，与R像素和G像素的光透过率差距较大，如此，导致液晶显示面板在进行显示时，在同一驱动电压下，由于RGB三个像素的光透过率不同，导致液晶显示器产生色偏现象，影响液晶显示器的成像质量。
发明内容
本发明的实施例提供一种阵列基板及显示装置，一定程度改善了显示装置产生色偏现象的问题，提高了显示装置的成像质量。
为达到上述目的，本发明的实施例采用如下技术方案：
第一方面，本发明的实施例提供一种阵列基板，所述阵列基板包括由交叉设置的栅线和数据线划分出的第一像素单元、第二像素单元和第三像素单元，
所述第一像素单元可与红色色阻对应，所述第一像素单元包括第一TFT的源极与漏极之间形成的第一TFT沟道；
所述第二像素单元可与绿色色阻对应，所述第二像素单元包括第二TFT的源极与漏极之间形成的第二TFT沟道；
所述第三像素单元可与蓝色色阻对应，所述第三像素单元包括第三TFT的源极与漏极之间形成的第三TFT沟道；
其中，所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；或者，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值。
在一种可能的实现方式中，所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；并且，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值。
在另一种可能的实现方式中，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值；并且，所述第一TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值。
在实施例中，所述第一像素单元还可包括至少两条第一条状电极，所述第一条状电极之间具有第一刻缝；所述第二像素单元还可包括至少两条第二条状电极，所述第二条状电极之间具有第二刻缝；所述第三像素单元还可包括至少两条第三条状电极，所述第三条状电极之间具有第三刻缝；
其中，所述第三刻缝宽度与所述第三条状电极宽度的比值可以大于所述第一刻缝宽度与所述第一条状电极宽度的比值，或者，所述第三刻缝宽度与所述第三条状电极宽度的比值可以大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
在另一实施例中，所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值，并且，所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
在又一实施例中，所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值，并且，所述第一刻缝宽度与所述第一条状电极宽度的比值大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
根据本发明的一个实施例，所述第一TFT沟道的宽度、所述第二TFT沟道的宽度以及所述第三TFT沟道的宽度中的每个范围可以为5μm至35μm；所述第一TFT沟道的长度、所述第二TFT沟道的长度以及所述第三TFT沟道的长度中的每个的范围可以为2μ m至8μm；
根据本发明的一个实施例，所述第一条状电极宽度、所述第二条状电极宽度以及所述第三条状电极宽度中的每个的范围可以为2μm至8μm；所述第一刻缝宽度、所述第二刻缝宽度以及所述第三刻缝宽度中的每个范围可以为1μm至5μm。
根据本发明的又一实施例，所述阵列基板还包括第四像素单元，所述第四像素单元可以与白色色阻对应，所述第四像素单元包括第四TFT的源极与漏极之间形成的第四TFT沟道；其中，所述第四TFT沟道的宽度与长度的比值可以大于所述第一TFT沟道的宽度与长度的比值、所述第二TFT沟道的宽度与长度的比值，以及所述第三TFT沟道的宽度与长度的比值中的任一个。
在又一实施例中，所述第四像素单元还可包括至少两条第四条状电极、所述第四条状电极之间的第四刻缝；所述第四刻缝宽度与所述第四条状电极宽度的比值可以大于所述第一刻缝宽度与所述第一条状电极宽度的比值、所述第二刻缝宽度与所述第二条状电极宽度的比值、所述第三刻缝宽度与所述第三条状电极宽度的比值中的任一个。
第二方面，本发明提供一种显示装置，所述显示装置可包括如前述各种可能的实施例中的任一种可能的实现方式所述的阵列基板。
本发明的实施例提供一种阵列基板及显示装置，该阵列基板中的第一像素单元可以与红色色阻对应，所述第一像素单元包括第一TFT的源极与漏极之间形成的第一TFT沟道；第二像素单元可以与绿色色阻对应，所述第二像素单元包括第二TFT的源极与漏极之间形成的第二TFT沟道；第三像素单元可以与蓝色色阻对应，所述第三像素单元包括第三TFT的源极与漏极之间形成的第三TFT沟道；其中，所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；或者，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值，这样一来，在相同的驱动电压下，由于增加了与蓝色色阻对应的第三TFT沟道的宽度与长度的比值(即第三TFT沟道的宽长比)，使得第三TFT内的存储电容的充放电速率增加，加速液晶分子在第三像素单元的 偏转，进而提高蓝色色阻对应的第三像素单元在该驱动电压下的光透过率，以保证RGB三个像素在相同的驱动电压下，尽可能的达到相近的光透过率，进而减少色偏现象，提高了显示装置的成像质量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中RGB三个像素的驱动电压-光透过率变化曲线；
图2为本发明的一个实施例提供的阵列基板的示意图；
图3为本发明实施例提供的一种阵列基板中的TFT的示意图；
图4为RGB三种色阻的光透过率柱状图；
图5为本发明实施例中RGB三个像素的驱动电压-光透过率变化曲线；
图6为本发明另一实施例提供的阵列基板的示意图；
图7为本发明又一实施例提供的阵列基板的示意图。
具体实施方式
以下描述中，为了说明而不是为了限定，提出了诸如特定系统结构、接口、技术之类的具体细节，以便透彻理解本发明。然而，本领域的技术人员应当清楚，在没有这些具体细节的其它实施例中也可以实现本发明。在其它情况中，省略对众所周知的装置、电路以及方法的详细说明，以免不必要的细节妨碍本发明的描述。
另外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
本发明的实施例提供一种阵列基板，如图2所示，包括由交叉设置的栅线11和数据线12划分出的第一像素单元21、第二像素单 元22和第三像素单元23。
其中，第一像素单元21可与红色色阻对应，第一像素单元21包括第一TFT 31的源极与漏极之间形成的第一TFT沟道41；第二像素单元22可与绿色色阻对应，第二像素单元22包括第二TFT 32的源极与漏极之间形成的第二TFT沟道42；第三像素单元23可与蓝色色阻对应，第三像素单元23包括第三TFT 33的源极与漏极之间形成的第三TFT沟道43。本领域技术人员可以理解的是，本文提到的色阻指的是对特定波长的光有透过率而阻挡其它波长的光的材料。例如，红色色阻可以只透过红色波长的光而吸收其他波长的可见光；绿色色阻可以只透过绿色波长的光而吸收其他波长的可见光；蓝色色阻可以只透过蓝色波长的光而吸收其他波长的可见光。
具体的，如图3所示，示出了任意TFT(例如图2中的第一TFT31、第二TFT 32或第三TFT 33)的结构示意图，包括栅极101、源极102和漏极103。其中，被限制在源极102和漏极103之间的区域称为TFT沟道(例如图2中的第一TFT沟道41、第二TFT沟道42或第三TFT沟道43)，TFT沟道的宽度W可以为源极102和漏极103相对面的长度，TFT沟道的长度L可以为源极102和漏极103的相对距离，因此，TFT沟道的宽长比可以为TFT沟道的宽度W与TFT沟道的长度L的比值。需要说明的是，图3中的TFT仅作为示例进行说明，本申请中的TFT结构不限于此。
在本发明的实施例中，第三TFT沟道43的宽度与长度的比值(即W3/L3)大于第二TFT沟道42的宽度与长度的比值(即W2/L2)；或者，第三TFT沟道43的宽度与长度的比值大于第一TFT沟道41的宽度与长度的比值(即W1/L1)，即W3/L3＞W2/L2，或者，W3/L3＞W1/L1。
具体的，阵列基板的工作原理为：通过栅线11和数据线12控制每个TFT的开闭，向对应的像素单元中写入图像信号，分别驱动第一像素单元21、第二像素单元22以及第三像素单元23中的液晶分子，最终实现显示。其中，第一像素单元21、第二像素单元22以及第三像素单元23可分别对应彩膜基板中的R(红色)、G(绿色)、B(蓝色)三种不同颜色的色阻，而不同颜色的色阻在相同 条件下的光透过率是不同的，如图4所示，在相同的色阻阻值下，蓝色色阻的透过率低于红色色组和绿色色阻，因此，如图1所示，在同一驱动电压下，第一像素单元21、第二像素单元22以及第三像素单元23中的RGB三个像素无法同时获得最大光透过率，进而导致显示器产生色偏。而在本发明的实施例中，设置W3/L3＞W2/L2，或者，W3/L3＞W1/L1，这样一来，由于开态电流的计算公式为：
Figure PCTCN2015084336-appb-000001
其中，Ion为开态电流，μ为载流子迁移率，C为TFT栅极电容，W为TFT沟道的宽度，L为TFT沟道的长度，Vg为TFT栅极正向电压，Vt为TFT阈值电压。从式中可以看出，在其他参数不变的情况下，开态电流随着TFT沟道的宽长比(即W/L)的增大而增大。
可以看出，本发明的实施例通过设置蓝色色阻对应的第三TFT沟道43的宽长比W3/L3大于W2/L2，或者W3/L3大于W1/L1，增加了第三像素单元23中的开态电流，使得第三TFT33内的存储电容的充放电速率增加，加速液晶分子在第三像素单元23的偏转，进而提高第三像素单元23中的蓝色像素在该驱动电压下的光透过率，这样，如图5所示，当RGB三个像素在相同的驱动电压下，B像素的VT曲线c’与R像素的曲线a、G像素曲线b基本重合，保证RGB三个像素同时获得最大光透过率，减少色偏现象。
当然，设置W3/L3＞W2/L2，或者，W3/L3＞W1/L1的方法可以有多种，例如，如图2所示，可以在设置相同的TFT沟道的宽度时(即W1＝W2＝W3)，减小第三TFT沟道43的长度L3，使得L3＜L2，或者，L3＜L1。
又或者，在设置相同的TFT沟道的长度时(即L1＝L2＝L3)，增加第三TFT沟道43的宽度W3，使得W3＞W2，或者，W3＞W1。
进一步地，本发明实施例中阵列基板上的第一像素单元21、第二像素单元22和第三像素单元23中，均可包含有像素电极(与像素单元中的TFT的漏极相连)，当然还可以进一步包含公共电极(与公共电极线相连，用于与像素电极形成驱动液晶的电场)。无论是像素电极、还是公共电极都可以包含至少两条条状电极。
具体到本实施例中，如图6所示，以条状电极为像素电极举例， 在实施例提供的阵列基板中，第一像素单元21还可包括至少两条第一条状电极202，以及第一条状电极202之间设有的第一刻缝201；第二像素单元22还可包括至少两条第二条状电极212，以及第二条状电极212之间设有的第二刻缝211；第三像素单元23还可包括至少两条第三条状电极222，以及第三条状电极222之间设有的第三刻缝221。
需要说明的是，第一条状电极202、第二条状电极212以及第三条状电极222也可以为公共电极，本发明对此不作限制。
其中，第三刻缝宽度D3与第三条状电极宽度S3的比值(即D3/S3)可大于第一刻缝宽度D1与第一条状电极宽度S1的比值(即D1/S1)，或者，第三刻缝宽度D3与第三条状电极宽度S3的比值(即D3/S3)可大于第二刻缝宽度D2与第二条状电极宽度S2的比值(即D2/S2)。
仍如图5所示，当增大D3/S3时，可以使得第三像素单元23中B像素的VT曲线向左平移得到曲线c’，使得曲线a、曲线b和曲线c’接近重合，也就是说，曲线a、曲线b和曲线c’在同一驱动电压下基本同时达到波峰(即在同一驱动电压下，RGB三个像素同时获得最大光透过率)。
因此，本发明提供的阵列基板，通过设置D3/S3＞D2/S2，可以缩小B像素获得最大光透过率时所对应的驱动电压与G像素获得最大光透过率时所对应的驱动电压之间差值的绝对值，或者，通过设置D3/S3＞D1/S1，可以缩小B像素获得最大光透过率时所对应的驱动电压与R像素获得最大光透过率时所对应的驱动电压之间差值的绝对值，如此，在同一驱动电压下，R像素、G像素和B像素可以同时达到最大的光透过率，从而可以减少或消除液晶显示面板的色偏，并且不增加阵列基板的复杂程度，简化了工艺，提高了生产良率。
当然，设置D3/S3＞D2/S2，或者，D3/S3＞D1/S1的方法可以有多种，例如，在设置相同的条状电极宽度时(即S1＝S2＝S3)，增大第三刻缝宽度D3，使得D3＞D2，或者，D3＞D1。
又或者，在设置相同的刻缝宽度时(即D1＝D2＝D3)，减小第三条状电极宽度S3，使得S3＜S2，或者，S3＜S1。
另外，需要说明的是，图6中所示出的第一条状电极202、第二条状电极212和第三条状电极222的位置仅作为示例进行示例性说明，具体的，第一条状电极202、第二条状电极212和第三条状电极222可以互相平行，其中，第一条状电极202、第二条状电极212和第三条状电极222可以均与数据线12平行，或者，第一条状电极202、第二条状电极212和第三条状电极222可以均与栅线11平行，又或者，第一条状电极202、第二条状电极212和第三条状电极222所在的延长线可以均与栅线11和数据线12相交。
替代性地，本发明实施例提供的阵列基板上，可以设置第三TFT沟道43的宽度与长度的比值大于第二TFT沟道42的宽度与长度的比值；并且，第三TFT沟道43的宽度与长度的比值大于第一TFT沟道41的宽度与长度的比值，即W3/L3＞W2/L2，并且，W3/L3＞W1/L1。
由于第三像素单元23对应的蓝色色阻的光透过率既小于第一像素单元21对应的红色色阻的光透过率，也小于第二像素单元22对应的绿色色阻的光透过率，因此，通过设置W3/L3＞W2/L2，并且，W3/L3＞W1/L1，使得蓝色像素的光透过率大于红色像素的光透过率的同时，蓝色像素的光透过率也大于绿色像素的光透过率，从而进一步保证在同一驱动电压下，RGB三个像素同时获得最大光透过率。
相应的，可以设置第三刻缝宽度D3与第三条状电极宽度S3的比值大于第一刻缝宽度D1与第一条状电极宽度S1的比值，并且，第三刻缝宽度D3与第三条状电极宽度S3的比值大于第二刻缝宽度D2与第二条状电极宽度S2的比值，即D3/S3＞D1/S1，并且，D3/S3＞D2/S2。
在另一实施例中，由于第三像素单元23对应的蓝色色阻的光透过率小于第一像素单元21对应的红色色阻的光透过率，而第一像素单元21对应的红色色阻的光透过率又小于第二像素单元22对应的绿色色阻的光透过率，因此，可以设置第三TFT沟道43的宽度与长度的比值大于第一TFT沟道41的宽度与长度的比值；并且，第一TFT沟道41的宽度与长度的比值大于第二TFT沟道42的宽度与长度的比值，即W3/L3＞W1/L1＞W2/L2，使得蓝色像素的光 透过率大于红色像素的光透过率的，而且红色像素的光透过率大于绿色像素的光透过率，以进一步保证在同一驱动电压下，RGB三个像素同时获得最大光透过率。
相应的，可以设置第三刻缝宽度D3与第三条状电极宽度S3的比值大于第一刻缝宽度D1与第一条状电极宽度S1的比值，并且，第一刻缝宽度D1与第一条状电极宽度S1的比值大于第二刻缝宽度D2与第二条状电极宽度S2的比值，即D3/S3＞D1/S1＞D2/S2。
示例性的，上述第一TFT沟道41的宽度、第二TFT沟道42的宽度以及第三TFT沟道43的宽度中的每个的范围可以为5μm至35μm；第一TFT沟道41的长度、第二TFT沟道42的长度以及第三TFT沟道43的长度中的每个的范围可以为2μm至8μm。
上述第一条状电极宽度、第二条状电极宽度以及第三条状电极宽度范围可以为2μm至8μm；第一刻缝宽度、第二刻缝宽度以及第三刻缝宽度范围可以为1μm至5μm。
例如，设置第三TFT沟道43的宽长比W3/L3为14um/5um，第一TFT沟道41的宽长比W1/L1为12um/5um，第二TFT沟道42的宽长比W2/L2为10um/5um，可以看出，由于W3/L3＞W1/L1＞W2/L2，使得第三TFT 33内的存储电容的充放电速率增加，加速液晶分子在第三像素单元23的偏转，进而提高第三像素单元23中蓝色像素在该驱动电压下的光透过率，这样，如图5所示，当RGB三个像素在相同的驱动电压下，B像素的VT曲线c’与R像素的曲线a、G像素曲线b基本重合，保证RGB三个像素同时获得最大光透过率，减少色偏现象。
进一步地，如图7所示，本发明实施例提供的阵列基板中，还可以包括第四像素单元24，所述第四像素单元24可以与白色色阻对应，所述第四像素单元24中还可包括至少两条第四条状电极232，第四条状电极232之间具有的第四刻缝231、以及第四TFT 34的源极与漏极之间形成的第四TFT沟道44；
由于第四像素单元24对应的白色像素，在与RGB三个像素一起实现显示的过程中可用于增加显示画面的亮度，因此，可以设置第四像素单元24中第四TFT沟道44的宽度与长度的比值(即W4/L4)为任意值，第四刻缝宽度与第四条状电极宽度的比值(即 D4/S4)为任意值。例如，设置第四TFT沟道44的宽度范围为5μm至35μm；第四TFT沟道44的长度范围为2μm至8μm；第四条状电极宽度范围为2μm至8μm；第四刻缝宽度范围为1μm至5μm。
在一个实施例中，可以设置所述第四TFT沟道44的宽度与长度的比值(即W4/L4)，大于所述第一TFT沟道41的宽度与长度的比值(即W1/L1)、所述第二TFT沟道42的宽度与长度的比值(即W2/L2)，以及所述第三TFT沟道43的宽度与长度的比值(即W3/L3)中的任一个。通过这样的设置，可以进一步优化与第四像素单元对应的TFT的特性，有利于提高该像素单元的充电效率，进而提高白色像素的透过率。
相应的，可以设置第四刻缝宽度与第四条状电极宽度的比值(即D4/S4)，大于第一刻缝宽度的比值与第一条状电极宽度(即D1/S1)、第二刻缝宽度与第二条状电极宽度的比值(即D2/S2)、第三刻缝宽度与第三条状电极宽度的比值(即D3/S3)中的任一个。这样，可以进一步优化横向电场以及在电场驱动下的液晶旋光效率，有利于实现更高亮度的显示画面，因而，对于显示装置的预定的亮度，可以在背光源的亮度被降低的情况下仍能得到该预定的亮度，有利于显示装置的节能降耗。
本发明实施例还提供了一种显示装置，其包括上述任意一种阵列基板。其中，所述显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明的实施例提供一种阵列基板及显示装置，该阵列基板中的第一像素单元可与红色色阻对应，所述第一像素单元包括第一TFT的源极与漏极之间形成的第一TFT沟道；第二像素单元可与绿色色阻对应，所述第二像素单元包括第二TFT的源极与漏极之间形成的第二TFT沟道；第三像素单元可与蓝色色阻对应，所述第三像素单元包括第三TFT的源极与漏极之间形成的第三TFT沟道；其中，所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；或者，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值，这样一来，在相 同的驱动电压下，由于增加了与蓝色色阻对应的第三TFT沟道的宽度与长度的比值(即第三TFT沟道的宽长比)，使得第三TFT内的存储电容的充放电速率增加，加速液晶分子在第三像素单元的偏转，进而提高蓝色色阻对应的第三像素单元在该驱动电压下的光透过率，以保证RGB三个像素在相同的驱动电压下，尽可能的达到相近的光透过率，进而减少色偏现象，提高了显示装置的成像质量。
在本说明书的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (11)

  1. 一种阵列基板，其中所述阵列基板包括由交叉设置的栅线和数据线划分出的第一像素单元、第二像素单元和第三像素单元，
    所述第一像素单元与红色色阻对应，所述第一像素单元包括第一TFT的源极与漏极之间形成的第一TFT沟道；
    所述第二像素单元与绿色色阻对应，所述第二像素单元包括第二TFT的源极与漏极之间形成的第二TFT沟道；
    所述第三像素单元与蓝色色阻对应，所述第三像素单元包括第三TFT的源极与漏极之间形成的第三TFT沟道；
    其中，所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；或者，所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值。
  2. 根据权利要求1所述的阵列基板，其中，
    所述第三TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值；并且，
    所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值。
  3. 根据权利要求1所述的阵列基板，其中，
    所述第三TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值；并且，
    所述第一TFT沟道的宽度与长度的比值大于所述第二TFT沟道的宽度与长度的比值。
  4. 根据权利要求1至3中任一项所述的阵列基板，其中，
    所述第一像素单元还包括至少两条第一条状电极，所述第一条状电极之间具有第一刻缝；
    所述第二像素单元还包括至少两条第二条状电极，所述第二条状电极之间具有第二刻缝；
    所述第三像素单元还包括至少两条第三条状电极，所述第三条状电极之间具有第三刻缝；
    其中，所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值，或者，所述第 三刻缝宽度与所述第三条状电极宽度的比值大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
  5. 根据权利要求4所述的阵列基板，其中，
    所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值，并且，
    所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
  6. 根据权利要求4所述的阵列基板，其中，
    所述第三刻缝宽度与所述第三条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值，并且，
    所述第一刻缝宽度与所述第一条状电极宽度的比值大于所述第二刻缝宽度与所述第二条状电极宽度的比值。
  7. 根据权利要求1至3中任一项所述的阵列基板，其中，
    所述第一TFT沟道的宽度、所述第二TFT沟道的宽度以及所述第三TFT沟道的宽度中的每个的范围为5μm至35μm；
    所述第一TFT沟道的长度、所述第二TFT沟道的长度以及所述第三TFT沟道的长度中的每个的范围为2μm至8μm。
  8. 根据权利要求4中所述的阵列基板，其中，
    所述第一条状电极宽度、所述第二条状电极宽度以及所述第三条状电极宽度中的每个的范围为2μm至8μm；
    所述第一刻缝宽度、所述第二刻缝宽度以及所述第三刻缝宽度中的每个的范围为1μm至5μm。
  9. 根据权利要求1所述的阵列基板，其中，所述阵列基板还包括第四像素单元，
    所述第四像素单元与白色色阻对应，所述第四像素单元包括第四TFT的源极与漏极之间形成的第四TFT沟道；
    其中，所述第四TFT沟道的宽度与长度的比值大于所述第一TFT沟道的宽度与长度的比值、所述第二TFT沟道的宽度与长度的比值，以及所述第三TFT沟道的宽度与长度的比值中的任一个。
  10. 根据权利要求9所述的阵列基板，其中，
    所述第四像素单元还包括至少两条第四条状电极、所述第四条状电极之间的第四刻缝；
    所述第四刻缝宽度与所述第四条状电极宽度的比值大于所述第一刻缝宽度与所述第一条状电极宽度的比值、所述第二刻缝宽度与所述第二条状电极宽度的比值、所述第三刻缝宽度与所述第三条状电极宽度的比值中的任一个。
  11. 一种显示装置，其中，所述显示装置包括如权利要求1-10中任一项所述的阵列基板。
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