WO2016148327A1 - Système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et procédé de fabrication de blindage de boîtier l'utilisant - Google Patents

Système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et procédé de fabrication de blindage de boîtier l'utilisant Download PDF

Info

Publication number
WO2016148327A1
WO2016148327A1 PCT/KR2015/003387 KR2015003387W WO2016148327A1 WO 2016148327 A1 WO2016148327 A1 WO 2016148327A1 KR 2015003387 W KR2015003387 W KR 2015003387W WO 2016148327 A1 WO2016148327 A1 WO 2016148327A1
Authority
WO
WIPO (PCT)
Prior art keywords
tray
package
holder
tray holder
chamber
Prior art date
Application number
PCT/KR2015/003387
Other languages
English (en)
Korean (ko)
Inventor
김창수
이민진
김봉석
채영복
Original Assignee
(주)씨앤아이테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)씨앤아이테크놀로지 filed Critical (주)씨앤아이테크놀로지
Publication of WO2016148327A1 publication Critical patent/WO2016148327A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the present invention relates to an inline sputtering system having a plurality of rotatable tray holders and a method for manufacturing a package shield using the same. More specifically, the outer shape has a batch shape. Shielding) It is configured to complete the sputtering process. By directly cooling the bottom surface of the tray, it is possible to cool the temperature rising during the shielding process of the semiconductor package in real time, so that high power can be continuously applied to the cathode and target consumption is reduced.
  • the present invention relates to an inline sputtering system having a plurality of rotary tray holders capable of minimizing production costs and a package shielding manufacturing method using the same.
  • Semiconductors are sensitive to high temperatures, and sputtering for semiconductor shielding requires a very thick film compared to the general semiconductor sputtering, so that sputtering for a long time may cause the package temperature to rise so as to cause a defect in the semiconductor package.
  • in-line sputtering uses the method of reciprocating scanning of cathodes or by depositing them far away from the cathode placement interval, so that the temperature of the package is increased by lowering the elevated temperature from the non-cathode area or away from the cathode and tray. It is being used while reducing the phenomenon.
  • the process chamber occupies is small, and several trays are placed in one batch sequentially, and the distance between the cathodes is disposed to reduce the temperature rise of the package, or to lower the power applied to the cathode.
  • the sputtering process is performed while the tray or cathode rotates several times or more during one batch of sputtering.
  • all trays in the chamber are sequentially removed, all new trays are sequentially inserted, high vacuum is formed, and sputtering starts.
  • the production yield is reduced due to the time loss of high vacuum formation.
  • a long process time is required due to unnecessary cathode consumption problems due to the arrangement of the cathodes and low sputtering power.
  • the present invention has been made in order to solve the above problems, the appearance is a batch (batch) shape, but as a device that can finish the shielding (Shielding) process in one rotation like the in-line method, the production yield is continuous production
  • the sputtering process chamber is long and large, occupies a large area, and the device price is low, and the economical efficiency of the inline sputtering process chamber can be solved. Its purpose is to.
  • An object of the present invention is to provide a system and a method of manufacturing a package shield using the same.
  • the tray can be continuously loaded and sputtered at the same time as the loading. The process is completed in one revolution, and the tray is immediately unloaded, thus minimizing the loss of loading and unloading time.
  • the purpose of the present invention is to provide an in-line sputtering system having a plurality of rotary tray holders and a package shielding manufacturing method using the same, which can solve a problem of batch sputtering, which is cylindrical and compact and compact, but cannot be continuously produced.
  • the present invention provides a docking station for receiving a tray from the outside, a first transport robot installed in the docking station for transporting the tray, the transfer and shielding process of the tray is completed, and the first Loader lock function to switch from atmospheric pressure to vacuum when the tray transported from the transfer robot is supplied, unloader lock function to switch from vacuum to atmospheric pressure when the tray with which the shielding process is completed is discharged by the first transfer robot, and the first transfer robot
  • a multi-functional chamber having a function of reducing outgases by heat-treating moisture and volatile substances on the surface of the package loaded by the upper surface of the tray, a plasma pre-treatment chamber for pre-treating the surface of the package heat-treated in the multi-functional chamber, and a shielding tunnel which is a process chamber Located in the multifunctional chamber, the plasma pretreatment chamber or tray A second transfer robot for loading or unloading the tray of the holder, and a tray holder on which the tray which loads the pre-treated package on the upper surface is mounted in a
  • the tray holder may be provided in plural, and the process may be performed after loading trays in each tray holder, and the process may be performed by loading and unloading trays one by one in a swapping manner of loading a new tray while unloading a completed tray.
  • the idler of the tray is stopped and the tray which is not completed is continuously rotated, and the tray which is completed is stopped and the sputtering is stopped or sputtered with low power. Can operate.
  • the tray holder revolving device a connecting portion for connecting the revolving shaft and each tray holder so as to radially install the plurality of tray holders around the revolving shaft, and is installed on the revolving shaft to the tray holder It may include a drive means for revolving around the idle axis.
  • the connecting portion is formed in a box shape
  • the drive means may be composed of a drive motor for rotating the idle shaft, and a gear box installed between the drive shaft and the idle shaft of the drive motor.
  • the individual tray holder rotating device is driven by a slip ring for supplying power to rotate each tray holder individually and the power supplied by the slip ring, and connects the idle shaft and each tray holder.
  • the connecting portion Is installed inside the connecting portion to include a separate drive means for rotating the tray holder individually, the individual drive means for driving the drive motor driven by the power supplied by the slip ring and the driving force of the drive motor by It may include a power transmission means for rotating the rotating shaft installed on the lower surface of the tray holder.
  • the cooling device is a cooling water inlet pipe installed in the idle shaft, a cooling water distribution device for communicating with each of the cooling water inlet pipe and the cooling water outlet pipe to distribute the cooling water to each tray holder, and the cooling water distribution
  • a connection pipe connected to the distribution pipe of the apparatus to provide cooling water to each tray holder, and a cooling water flow path formed on the lower surface of the tray holder to allow the cooling water introduced through the connection pipe to cool down the tray holder and then be discharged. can do.
  • the cooling water inlet pipe may be installed inside, and the cooling water inlet pipe may be formed in a double pipe shape installed outside.
  • the second transfer robot may be installed inside the shielding tunnel, which is the process chamber, or may be configured as a separate independent chamber, and the tray holder revolving device may be replaced when the second transfer robot loads or unloads the tray. Stops the process, and the individual trays that have not completed the process continue to rotate, and the individual tray holder rotating devices to stop the process to complete the rotation can be stopped.
  • the cathode unit may be installed so that the magnet module is inclined at a predetermined angle to adjust the sputtering angle.
  • an angle adjusting means for tilting the magnet module is further included, and the angle adjusting means includes an angle adjusting shaft installed in the longitudinal direction on the upper part of the magnet module, and an angle for coupling the angle adjusting shaft and the magnet module. It may include an adjusting block.
  • the cathode unit is disposed opposite the substrate to provide a target of the cathode to provide a deposition material toward the substrate, and a first extending along the longitudinal direction of the target to generate a magnetic field based on the magnetic force lines on the surface of the target;
  • the present invention may further include a dummy tray stocker for storing a dummy tray for preventing contamination of the tray holder, and a buffer stocker which is a temporary storage of the tray.
  • the docking station may be docked or undocked using a loading cassette for storing the tray before the process and an unloading cassette for storing the tray in which the shielding process is completed.
  • a liquid adhesive applicator for applying a liquid adhesive for detaching the semiconductor package on the upper surface of the tray, an adhesive pad remover for removing the adhesive pad on the upper surface of the tray after unloading the semiconductor package, and a semiconductor on the upper surface of the tray
  • a packaging loading device for loading a package, and a packaging unloading device for unloading the semiconductor package having completed the process may be further included.
  • a package shielding manufacturing method comprising the step of transferring to.
  • step (a) before and after the sputtering process, the dummy trays may be seated in the individual tray holders to prevent the tray holders from being contaminated.
  • the dummy tray may be cleaned at a predetermined period to prevent the tray holder from being contaminated.
  • the process can be carried out in a state in which a plurality of packages are loaded on the adhesive pad formed using a liquid adhesive on the upper surface of the tray supplied from the outside.
  • step (b) it may include a package loading device to form a pressure-sensitive adhesive pad by adding a liquid adhesive applicator, and to load a semiconductor package on the upper surface of the tray on which the pressure-sensitive adhesive pad is formed.
  • a vacuum pump may be installed in the multifunctional chamber to convert from atmospheric pressure to vacuum in order to perform multifunction, and a heater for package surface heat treatment may be added.
  • the plasma pretreatment chamber may be added with RF power to generate plasma and a high vacuum pump may be installed to maintain the vacuum in order to perform the pretreatment process.
  • a plurality of cathode units are disposed radially around the revolution axis of the tray holder, and the plurality of cathode units may be configured as cylindrical cathodes or planar cathodes. have.
  • the outer shape is arranged, but the shielding process is completed by one rotation like the in-line method to reduce the time loss of tray loading and unloading, high vacuum formation and unnecessary sputtering target Due to the consumption and low sputtering power, there is an effect that can solve the problem of a long process time.
  • the semiconductor package can be directly cooled in real time, and high deposition power can be applied to the cathode to improve deposition rate.
  • the tray can be continuously loaded and sputtered at the same time as the loading. The process is completed in one revolution, and the tray is immediately unloaded, thus minimizing the loss of loading and unloading time.
  • FIG. 1 is a plan view showing a first embodiment of an inline sputtering system according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of the inline sputtering system of FIG. 1.
  • FIG. 2 is a perspective view of the inline sputtering system of FIG. 1.
  • FIG. 3 is a perspective view illustrating an internal structure of FIG. 2.
  • FIG. 4 is a perspective view showing the tray holder revolving device of the present invention.
  • FIG. 5 is an exploded perspective view showing the individual tray holder rotating device of the present invention.
  • FIG. 6 is a cross-sectional view showing a cooling water distribution structure of the present invention.
  • FIG. 7 is a cross-sectional view showing the tray holder of the present invention.
  • FIG. 8 is an enlarged view of FIG. 7.
  • FIG. 9 is a cross-sectional view showing the internal structure of the rotary shaft of the tray holder of the present invention.
  • FIG. 12 is a cross-sectional view showing an embodiment of the cathode of the present invention.
  • FIG. 13 is a perspective view illustrating an angle adjusting means of the cathode in FIG. 12.
  • FIG. 14 is a sectional view showing another embodiment of the cathode of the present invention.
  • 15 is a plan view illustrating a second embodiment of an inline sputtering system according to an embodiment of the present invention.
  • 16 is a plan view illustrating a third embodiment of an inline sputtering system according to an embodiment of the present invention.
  • FIG. 1 is a plan view showing a first embodiment of an inline sputtering system according to an embodiment of the present invention
  • Figure 2 is a perspective view showing the inline sputtering system in Figure 1
  • the inline sputtering system of the present invention includes a docking station 10 receiving a tray from the outside, a plasma pretreatment chamber 20 for pretreating the surface of a semiconductor package, and a tray holder 310.
  • a shielding tunnel 100 which is a process chamber configured to complete a sputtering process by rotational revolution, and a multifunctional chamber 40 having a loader lock function and an unloader function.
  • the docking station 10 is provided with a first transfer robot 12 for transferring the tray is completed, the transfer and shielding process of the tray.
  • the first transfer robot 12 receives a tray from the outside and transfers the tray to the plasma pretreatment chamber 20 or transfers the tray to which the process is completed.
  • the shielding tunnel 100 is provided with a tray holder 310, which is mounted on the upper surface of the pre-treated package is mounted on the top surface, and the sputtering process is performed by one revolution of the tray holder 310 As a process chamber configured to be completed, the tray holder 310 is rotated about an axis of revolution while simultaneously rotating and individually rotating.
  • the multifunctional chamber 40 may be discharged by the first transport robot 12 when the tray transported from the first transport robot 12 is supplied, a loader lock function for switching from atmospheric pressure to vacuum, and a shielding process is completed.
  • the unloader lock function of switching from vacuum to atmospheric pressure and heat-treating moisture and volatile substances on the surface of the package loaded on the upper surface of the tray by the first transfer robot 12 to reduce the outgas.
  • the shielding tunnel 100 which is a process chamber
  • the second transfer robot 30 for loading or unloading the tray of the multi-functional chamber 40, the plasma pretreatment chamber 20 or the tray holder, and the shielding
  • the apparatus further includes a rotating device and a cooling device installed to cool the tray holder to lower the temperature of the package loaded on the tray.
  • the second transfer robot 30 is preferably composed of two robots can be configured to proceed with the loading and unloading of the tray at the same time.
  • the second transfer robot 30 may be configured as a three-axis transport robot having a degree of freedom in the Z, R direction.
  • the second transfer robot 30 is coupled to a robot end effector on which the tray is placed to transfer the tray to the plasma pretreatment chamber 20, the shielding tunnel 100, or the multifunctional chamber 40. Make sure to move to the correct position without shaking.
  • the second transfer robot 30 may be installed inside the shielding tunnel 100 or may be configured as a separate independent chamber.
  • the tray holder revolving device 300 stops the process, and individual trays in which the process is not completed continue to rotate, and the process is completed.
  • the individual tray holder rotating device to be swapped can stop rotation.
  • the tray holder 310 on which the tray T loaded with the semiconductor package is mounted is provided in a rotatable manner so that the sputtering process is completed by one rotation of the tray holder 310. It is characteristic to be composed.
  • the tray holder 310 is provided in plural, as shown in Figure 4, after loading the tray in each tray holder 310, the process proceeds, and loading a new tray while unloading the tray is completed
  • the process is continuously carried out by loading and unloading trays one by one in a swapping manner.When loading and unloading the trays, the tray stops idle, the tray which is not completed is rotated continuously, and the tray which is completed is rotated. You can stop the sputtering after stopping and operate in sputtering idle with low power.
  • the tray holder 310 is such that a plurality of tray holders 310 are radially installed around the idle shaft 320 so that the tray holders 310 rotate simultaneously by rotating the idle shaft 320. .
  • a tray holder revolving device 300 for rotating the tray holder 310 about the revolving shaft 320 is provided.
  • the tray holder revolving device 300 is connected to the revolving shaft 320 and each tray holder 310 so as to radially install the plurality of tray holders 310 about the revolving shaft 320. 330 and driving means installed on the idle shaft 320 to rotate the tray holder 310 about the idle shaft 320.
  • the driving means may include a drive motor 340 for rotating the idle shaft 320 and a gear box 350 installed between the drive shaft of the drive motor 340 and the idle shaft 320.
  • a well-known configuration can be applied.
  • the present invention further includes an individual tray holder rotating device which rotates the entire tray and simultaneously rotates the individual trays independently.
  • the individual tray holder rotating device is driven by a slip ring 360 for supplying power to rotate each tray holder 310, and a power supplied by the slip ring 360, and the tray holder 310. It includes a separate drive means for rotating the individually.
  • the individual drive means is installed inside the connection portion 330 connecting the idle shaft 320 and each tray holder 310.
  • connection part 330 is formed in a box shape including an inner space, and the individual driving means is installed inside the connection part 330.
  • connection part 330 is a box-shaped connection part main body 334 including an inner space and an open upper surface of the connection part main body 334.
  • the cover 332 is combined.
  • the individual driving means 400 may be installed in the connection unit body 334.
  • the individual driving means 400 may include a driving motor 410 driven by the power supplied by the slip ring 360, and the It may include a power transmission means for transmitting the driving force of the drive motor 410 to rotate the rotary shaft 420 installed on the lower surface of the tray holder 310.
  • the gear box for reducing the rotational speed of the drive motor 410 may be further installed, the pulley and the pulley rotated by the drive of the drive motor 410, the pulley and the rotary shaft ( It may be made of a belt connecting the 420.
  • the slip ring 360 is a rotatable connector that can be transmitted without twisting an electric wire when supplying power or a signal line to a rotating equipment, and thus, the inline sputtering system of the present invention uses the plurality of tray holders 310.
  • the tray holder 310 may be rotated individually by supplying power to the driving motor 410 at the same time as the overall rotation and the slip ring 360.
  • the sputtering process may be performed in an inline manner through the plurality of cathode units 200, and the tray holder 310 may also be individually. Because of the rotation, the thin film may be uniformly deposited regardless of the position of the semiconductor package seated on the upper surface of the tray T.
  • Such an in-line sputtering system of the present invention loads the trays T in each tray holder 310 and proceeds with the process, and the trays in a swapping manner of loading a new tray while unloading the completed tray T.
  • the process can be carried out continuously while loading and unloading one by one.
  • the idle of the tray is stopped and the tray which has not been completed is continuously rotated, and the tray having completed the process can be stopped and the sputtering can be operated by sputtering idle state with low power applied. have.
  • the cathode unit 200 of the present invention is disposed radially around the revolving shaft 320 of the tray holder 310. That is, since the cathode unit 200 is disposed radially concentrically with the tray holder 310 (rotation axis), the same process as inline can be performed.
  • the cathode unit 200 may be installed so that the magnet module 220 is inclined at a predetermined angle to adjust the sputtering angle.
  • the magnet module 220 of the target 210 is installed to be inclined at a predetermined angle, as shown in FIG.
  • the magnet module 220 of the target 210 may have an angle between the center line C and the vertical direction in a range of 0 ° to 90 °. That is, in the present invention, the magnet module 220 of the target 210 may be in the range of the inclination angle is a value of 0 ° to 90 ° range.
  • the sputtering angle of the target 210 can be adjusted by tilting the magnet bar 220. That is, the magnet module 220 installed inside the cylindrical target 210 is inclined at a predetermined angle so as to have a sputtering angle of the target 210.
  • the cathode unit 200 includes an angle adjusting means for adjusting the deposition angle of the thin film of the target 210.
  • the angle adjusting means includes an angle adjusting shaft 214 installed in the longitudinal direction on the upper side of the magnet module 220, and for coupling the angle adjusting shaft 214 and the magnet module 220 to each other.
  • An angle adjusting block 212 is included.
  • the angle adjusting shaft 214 is connected to a timing belt (not shown) connected to a driving motor (not shown) installed inside the cathode unit 200. When the driving motor is driven, the timing belt is connected to the angle adjusting shaft.
  • the magnet module 220 can be tilted or rotated.
  • angle adjustment shaft 214 is coupled to the magnet module 220 by the angle adjustment block 212, when the angle adjustment shaft 214 is fixed or rotated at a predetermined angle according to the angle Module 220 is also tilted or rotated to have the sputtering angle.
  • the magnet bar 220 may be fixed at a constant angle or continuously swinged. That is, by controlling the driving of the drive motor, the magnet module 220 can be fixed or rotated at a constant angle.
  • the cathode unit 200 may be formed in a cylindrical or rectangular type (rectangular cathode), may be installed in a form inclined while facing the tray at a predetermined angle and symmetrically facing each other.
  • the cathode unit 200 may include a plurality of magnet modules 230.
  • the cathode unit 200 of the present invention is configured such that a plurality of magnet modules 230 are installed in one target to greatly improve the deposition rate.
  • the deposition effective area is increased by increasing the deposition angle by adjusting the opposing angles of the center line of the magnet module 230 and the substrate to improve the deposition rate.
  • a cooling device for directly cooling the tray holder 310 is provided to lower the temperature of the semiconductor package.
  • Figure 6 is a cross-sectional view showing a cooling water distribution structure of the present invention
  • Figure 7 is a cross-sectional view showing a tray holder of the present invention
  • Figure 8 is an enlarged view in Figure 7
  • FIGS. 10 to 11 are enlarged views of FIG. 9.
  • the cooling device has a structure in which the coolant supplied from the outside is discharged to cool the tray holder through a flow path formed on the lower surface of each tray holder.
  • the present invention is provided with a double pipe installed through the idle shaft 320, slip ring 360.
  • the double pipe includes a coolant inlet pipe 510 for introducing coolant and a coolant outlet pipe 520 installed coaxially with the coolant inlet pipe 510.
  • the coolant inlet pipe 510 is installed inside, but the coolant outlet pipe 520 is provided in the form of a double pipe is installed on the outside, but may be installed on the contrary.
  • the coolant inlet pipe 510 and the coolant outlet pipe 520 have a structure in which the tray holder 310 rotates as a whole and continuously circulates the refrigerant, the slip ring 360, the gearbox 350, The idle shaft 320 and the like should be formed in a hollow shape, and the coolant inlet pipe 510 and the coolant outlet pipe 520 are installed in the hollow shape so that the coolant can be rotated at the same time as the tray holder 310 is rotated. It has a structure that can be circulated.
  • Cooling water inlet pipe 510 and the cooling water outlet pipe 520, the upper end of the cooling water distribution device 530 for distributing the cooling water to each tray holder 310 is installed.
  • the cooling water distribution device 530 is provided with a distribution pipe 532 for distributing the cooling water to each tray holder 310, the inside is in communication with the cooling water inlet pipe 510 and the cooling water outlet pipe 520, respectively Divided.
  • a plurality of distribution pipes 532 may be connected to each of the divided distribution devices 530 to distribute the cooling water to the tray holder 310.
  • a connecting pipe (shown by an arrow in the drawing) is connected to the distribution pipe 532 of the cooling water distribution device 530 to provide the cooling water to each tray holder 310, and the cooling water introduced through the connecting pipe is connected.
  • a cooling water flow path 540 is formed on the lower surface of the tray holder 310 to discharge the cooling after the tray holder 310.
  • the present invention may further include a dummy tray stocker 120 for storing a dummy tray for preventing contamination of the tray holder, and a buffer stocker 110 which is a temporary storage of the tray.
  • a tray and a tray cover may be bonded or separated.
  • the appearance is made of a batch type, and thus, the size of the entire equipment can be reduced and the device can be easily expanded.
  • the package may be loaded / unloaded using an adhesive pad for detaching the semiconductor package from the upper surface of the tray.
  • the present invention proposes three embodiments.
  • the process of coating and loading the adhesive material, removing the adhesive pad and unloading the package from the outside is performed.
  • a method of docking a tray loaded with a semiconductor package to the system of the present invention is proposed.
  • the docking station 10 docks or undockes the cassette 50b in which the trays loaded with the semiconductor package are stacked at a constant pitch, and the cassette 60b in which the plurality of trays where sputtering is completed are stacked at a constant pitch. (Undocking) to use.
  • the application of the adhesive material and the adhesive pad removal process may be carried out from the outside, it may be implemented by using a cassette for the in-line sputtering system of the present invention.
  • the cassette 50a in which the plurality of adhesive-coated trays are stacked at a constant pitch for loading the semiconductor package, and the cassette 60a in which the plurality of trays having been sputtered and completed until unloading the package are stacked at a constant pitch are described above. Docking or undocking to the docking station 10 is used.
  • the cassettes 50a and 60a are formed with openings for opening and closing the trays on one surface thereof, and a plurality of shelves are provided on both sides at regular intervals, so that the trays are stacked one by one on the shelves.
  • the cassettes 50a and 60a are docked to the docking station 10 through a cassette docking module, and the cassette docking module is provided on an open side of the cassettes 50a and 60a to provide a docking station 10. It can be fixed at the entrance.
  • a package loading unit 70 for loading a package into a tray to which the adhesive material is applied, and a package in which the process is completed are trays.
  • the package unloading unit 80 may be included.
  • a third embodiment of the present invention for the manufacture of the adhesive pad is a liquid adhesive applicator 50 for applying a liquid adhesive for detaching the semiconductor package on the upper surface of the tray, and the tray after unloading the semiconductor package And an adhesive pad remover 60 for removing the adhesive pad on the upper surface.
  • reference numeral 70 denotes a package loading unit for loading a package coated with an adhesive material
  • reference numeral 80 denotes a package unloading unit for unloading a package on which a process is completed.
  • the package loading unit 70 is a loading module for automatically loading semiconductor packages onto a tray
  • the package unloading unit 80 is an unloading module for automatically unloading a deposited semiconductor package.
  • 70 and the package unloading unit 80 may be included in the inline sputtering system of the present invention, or may be separated and operated independently of the inline sputtering system.
  • the third embodiment of the present invention includes the liquid adhesive applicator 50, the adhesive pad remover 60, the package loading unit 70, and the package unloading unit 80, thereby providing a semiconductor package on the upper surface of the tray.
  • the manufacturing and removal process of the adhesive pad for desorption is included in the inline sputtering system of the present invention, the present invention is not limited thereto, and the manufacturing and removal process of the adhesive pad may be performed externally.
  • the dummy tray loaded in the dummy tray stocker 120 is seated in an individual tray holder, and the tray is supplied from the outside.
  • the process may be performed on the upper surface of the tray supplied from the outside in a state in which a plurality of packages are loaded on a pressure-sensitive adhesive pad formed using a liquid pressure-sensitive adhesive, a pressure-sensitive adhesive applicator is formed to form a pressure-sensitive adhesive pad, and the pressure-sensitive adhesive pad is formed.
  • a package loading device for loading a semiconductor package on the upper surface of the tray may be used.
  • the tray of the heat-treated package is transferred to the plasma pretreatment chamber 20 by the first transfer robot 12 of the docking station 10. ) To pretreat the surface of the semiconductor package loaded on the upper surface of the tray.
  • a vacuum pump may be installed in the multifunctional chamber to convert from atmospheric pressure to vacuum to perform multifunction, and a heater for package surface heat treatment may be added.
  • the plasma pretreatment chamber may be equipped with RF (RF) power to generate a plasma and a high vacuum pump may be installed to maintain the vacuum in order to perform the pretreatment process.
  • RF RF
  • a tray swapping is performed to unload the tray of the pre-processed package, which is loaded or sputtered, into the tray holder of the shielding tunnel 100 in the plasma pretreatment chamber 20 by the second transfer robot 30.
  • the tray loaded in the tray holder rotates while rotating, and sputtering starts.
  • the present invention is provided with a plurality of cathode units disposed radially around the revolution axis of the tray holder, the plurality of cathode units may be composed of a cylindrical cathode or a planer cathode.
  • Tray swapping is performed to load the tray of the unloaded or pre-processed package from the tray holder of the shielding tunnel 100 which is a process chamber.
  • the unloaded tray is transferred to the multifunctional chamber 40, the vacuum is converted to atmospheric pressure in the multifunctional chamber 40, and the transferred tray is transferred to the outside.
  • the dummy trays may be seated on the individual tray holders to prevent the tray holders from being contaminated.
  • the dummy tray may prevent the tray holder from being contaminated by cleaning the surface at regular intervals.
  • the sputtering process is performed to complete the sputtering process in one rotation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et un procédé de fabrication de blindage de boîtier l'utilisant, et le système comprend : une station d'accueil recevant un bac en provenance de l'extérieur ; un premier robot de transfert disposé au niveau de la station d'accueil de façon à transférer le bac ; une chambre multifonction possédant une fonction sas de chargement pour passer de la pression atmosphérique au vide, une fonction sas de décharge pour passer du vide à la pression atmosphérique, et une fonction de réduction de dégazage ; une chambre de prétraitement par plasma pour pré-traiter la surface d'un boîtier, qui est soumis à un traitement thermique dans la chambre multifonction ; un second robot de transfert positionné dans un tunnel de blindage et chargeant ou déchargeant le bac ; le tunnel de blindage, qui est une chambre de traitement, est pourvu des supports de bac, sur lesquels le bac est placé, et est formé de manière qu'une étape de pulvérisation cathodique soit terminée par une révolution des supports de bac ; une pluralité d'unités de cathode disposées radialement par rapport à l'arbre de révolution des supports de bac ; un dispositif de révolution de supports de bac pour faire tourner les supports de bac par rapport à l'arbre de révolution ; des dispositifs de rotation de support de bac individuels pour faire tourner individuellement les supports de bac ; et un dispositif de refroidissement pour refroidir les supports de bac.
PCT/KR2015/003387 2015-03-13 2015-04-03 Système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et procédé de fabrication de blindage de boîtier l'utilisant WO2016148327A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0035075 2015-03-13
KR1020150035075A KR101689016B1 (ko) 2015-03-13 2015-03-13 복수의 회전형 트레이 홀더를 구비한 인라인 스퍼터링 시스템 및 이를 이용한 패키지 쉴딩 제조방법

Publications (1)

Publication Number Publication Date
WO2016148327A1 true WO2016148327A1 (fr) 2016-09-22

Family

ID=56919722

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/003387 WO2016148327A1 (fr) 2015-03-13 2015-04-03 Système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et procédé de fabrication de blindage de boîtier l'utilisant

Country Status (3)

Country Link
KR (1) KR101689016B1 (fr)
TW (1) TW201638368A (fr)
WO (1) WO2016148327A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378287A (zh) * 2018-11-15 2019-02-22 中芯长电半导体（江阴）有限公司 半导体封装装置
CN109763111A (zh) * 2019-02-26 2019-05-17 佛山市佛欣真空技术有限公司 内外双循环流水线
US20190181028A1 (en) * 2017-12-11 2019-06-13 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101977100B1 (ko) * 2018-11-15 2019-05-10 이지메카시스템(주) 렌즈 어셈블리 어닐링 시스템
KR102662419B1 (ko) * 2018-11-22 2024-04-30 세메스 주식회사 온도 조절 모듈 및 이를 포함하는 테스트 핸들러
JP7451436B2 (ja) * 2020-02-14 2024-03-18 芝浦メカトロニクス株式会社 成膜装置及び成膜装置の水分除去方法
CN112931761B (zh) * 2021-04-20 2023-06-02 山东大学 基于大气压冷等离子体的茶叶农残降解与消毒装置及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006161095A (ja) * 2004-12-07 2006-06-22 Matsushita Electric Ind Co Ltd 成膜装置及び成膜方法
KR20070121838A (ko) * 2005-04-14 2007-12-27 탱고 시스템즈 인코포레이티드 스퍼터링 시스템
KR101167947B1 (ko) * 2010-03-19 2012-07-23 (주) 엔피홀딩스 스퍼터링 시스템
US20130134036A1 (en) * 2011-11-29 2013-05-30 Chenming Mold Ind. Corp. Equipment for Making IC Shielding Coating Layer and Metal Shielding Layer of IC
KR101479251B1 (ko) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 반도체 패키지의 전자파 차폐를 위한 스퍼터링 장치 및 이를 포함한 인라인 스퍼터링 증착 시스템

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4453850B2 (ja) 1999-06-01 2010-04-21 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ膜形成方法
KR100586378B1 (ko) * 2004-08-16 2006-06-08 세메스 주식회사 고진공 챔버에 적합한 타겟 구동 장치 및 이를 이용한박막 증착 설비
KR100879380B1 (ko) * 2008-06-30 2009-01-20 정도화 뱃치 타입 진공증착장치 및 이를 이용한 증착 코팅방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006161095A (ja) * 2004-12-07 2006-06-22 Matsushita Electric Ind Co Ltd 成膜装置及び成膜方法
KR20070121838A (ko) * 2005-04-14 2007-12-27 탱고 시스템즈 인코포레이티드 스퍼터링 시스템
KR101167947B1 (ko) * 2010-03-19 2012-07-23 (주) 엔피홀딩스 스퍼터링 시스템
US20130134036A1 (en) * 2011-11-29 2013-05-30 Chenming Mold Ind. Corp. Equipment for Making IC Shielding Coating Layer and Metal Shielding Layer of IC
KR101479251B1 (ko) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 반도체 패키지의 전자파 차폐를 위한 스퍼터링 장치 및 이를 포함한 인라인 스퍼터링 증착 시스템

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190181028A1 (en) * 2017-12-11 2019-06-13 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
US11149345B2 (en) 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
CN109378287A (zh) * 2018-11-15 2019-02-22 中芯长电半导体（江阴）有限公司 半导体封装装置
CN109763111A (zh) * 2019-02-26 2019-05-17 佛山市佛欣真空技术有限公司 内外双循环流水线

Also Published As

Publication number Publication date
KR101689016B1 (ko) 2016-12-22
KR20160109876A (ko) 2016-09-21
TW201638368A (zh) 2016-11-01

Similar Documents

Publication Publication Date Title
WO2016148327A1 (fr) Système de pulvérisation cathodique en ligne comportant une pluralité de supports de bac rotatifs, et procédé de fabrication de blindage de boîtier l'utilisant
WO2016021759A1 (fr) Appareil de pulvérisation pour le blindage d'un boîtier de semiconducteur contre les ondes électromagnétiques et système de dépôt de pulvérisation en ligne comprenant celui-ci
US20090087932A1 (en) Substrate supporting apparatus, substrate supporting method, semiconductor manufacturing apparatus and storage medium
KR101276785B1 (ko) 웨이퍼상 물품의 반송장치 및 반송방법
WO2010024512A1 (fr) Appareil de traitement de substrat et procédé de transfert de substrat dans cet appareil
WO2010016650A1 (fr) Appareil de traitement de substrats et procédé de transfert de substrats dans celui-ci
WO2010024511A1 (fr) Procédé de réglage de la vitesse d’un organe de transfert, procédé de transfert de substrats l’utilisant et appareil de traitement de substrats
WO2015096820A1 (fr) Chambre de traitement et appareil de traitement de semi-conducteur
WO2010032910A1 (fr) Dispositif de transfert de substrat, appareil de traitement de substrat comprenant ce dispositif, et procédé permettant de transférer un substrat en utilisant le dispositif de transfert de substrat
WO2013147481A1 (fr) Appareil et équipement en amas pour croissance épitaxiale sélective
JP3571471B2 (ja) 処理方法，塗布現像処理システム及び処理システム
KR950704804A (ko) 웨이퍼 처리 방법 및 그 장치(Wafer processing machine vacuum front end method and apparatus)
JP2002324828A (ja) 基板両面処理装置
WO2007027436A2 (fr) Traitement de tranches fines
WO2010016649A1 (fr) Appareil de traitement de substrat et procédé de transfert de substrat dans celui-ci
JP2002203892A (ja) 基板処理装置、基板処理方法および半導体装置の製造方法
KR101932777B1 (ko) 기판 처리 장치 및 기판 처리 방법
US20140224414A1 (en) Joining method and joining system
TW201824343A (zh) 基板處理裝置及基板處理方法
WO2016080615A1 (fr) Appareil de fabrication de tampon adhésif permettant de former un film de protection contre les ondes électromagnétiques de boitier de semi-conducteur, et procédé de fabrication de tampon adhésif l'utilisant
WO2013122311A1 (fr) Module de traitement de substrat et appareil de traitement de substrat le comprenant
KR20110016644A (ko) 기판처리장치
WO2020004880A1 (fr) Dispositif et procédé de traitement de substrat
WO2014163366A1 (fr) Système de traitement thermique et procédé d'exécution d'un traitement thermique et procédé de fabrication d'une cellule solaire cigs utilisant ce système
JP2000049215A (ja) 処理システム

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15885630

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15885630

Country of ref document: EP

Kind code of ref document: A1