WO2016102474A1 - Composant optoélectronique et procédé de fabrication de celui-ci - Google Patents

Composant optoélectronique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2016102474A1
WO2016102474A1 PCT/EP2015/080803 EP2015080803W WO2016102474A1 WO 2016102474 A1 WO2016102474 A1 WO 2016102474A1 EP 2015080803 W EP2015080803 W EP 2015080803W WO 2016102474 A1 WO2016102474 A1 WO 2016102474A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead frame
optoelectronic
semiconductor chip
optoelectronic component
frame portion
Prior art date
Application number
PCT/EP2015/080803
Other languages
German (de)
English (en)
Inventor
Matthias Sperl
Tobias Gebuhr
David Racz
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2016102474A1 publication Critical patent/WO2016102474A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the present invention relates to an optoelectronic component according to claim 1 and a method for producing an optoelectronic component according to patent claim 14.
  • Optoelectronic components such as light-emitting diode components
  • housing variants from the prior art.
  • known from the prior art housing having an embedded in a molding body lead frame For many applications it is desirable to form optoelectronic Bauele ⁇ ments with space-saving as possible housings.
  • An optoelectronic component comprises a first conductor frame section, a second conductor frame section and an optoelectronic semiconductor chip.
  • the first lead frame portion and the second lead frame portion each have ⁇ wells on a top.
  • the optoelectronic semiconductor ⁇ chip is on top of the first leadframe portion arranged.
  • the first conductor frame portion, the second Lei ⁇ terrahmenabêt and the optoelectronic semiconductor chip are jointly embedded in a molded article.
  • the Obersei ⁇ th of lead frame portions are seen by the optoelectronic semiconductor chip and the molding completely covered.
  • this optoelectronic component can have very compact external dimensions.
  • the optoelectronic component is advantageously very mechanically stable due to the embedding of the conductor frame sections and of the optoelectronic semiconductor chip in the common molded body.
  • the optoelectronic semiconductor chip of the optoelectronic component can be for example a light-emitting semi ⁇ conductor chip or a light-detecting semiconductor chip.
  • the optoelectronic semiconductor chip with ⁇ can play, be a light emitting diode chip (LED chip).
  • the optoelectronic component can prop ⁇ nen for example, for backlighting a liquid crystal display, such as a liquid crystal screen of a portable electronic device.
  • the optoelectronic semiconductor chip on a side facing the ers ⁇ th leadframe section underside, a first electrical contact surface which is electrically conductively connected to the first lead frame portion.
  • the optoelectronic semiconductor chip is also arranged on the upper side of the second conductor frame section.
  • the optoelectronic semiconductor chip extends in this
  • the opto-electronic device can thereby be formed with particularly com pact ⁇ dimensions.
  • the optoelectronic semiconductor chip has on its underside a second electrical contact surface which
  • the optoelectronic semiconductor chip on a second elekt ⁇ generic contact surface which is comparatively connected using a bonding wire electrically connected to the second lead frame portion.
  • the second electrical contact surface of the opto ⁇ electronic semiconductor chip may in this case, for example ⁇ be arranged on a side facing away from the lead frame sections top of the optoelectronic semiconductor chip.
  • an upper side of the optoelectronic semiconductor chip is at least partially not covered by the shaped body.
  • the top of the optoelectronic semiconductor chips can form into diesel sem case a radiation passage area of the optoelectronic semiconductor chips ⁇ rule, in particular for example ei ⁇ ne radiation emitting surface.
  • the opto-electronic semi-conductor chip ⁇ of the optoelectronic component is thereby able to emit radiation at its top or to detect radiation.
  • a wavelength-converting element is arranged on the upper side of the optoelectronic semiconductor chip.
  • the WEL lendorfnkonvert Schlierende element can be adapted by the optoelectronic semiconductor chip of the optoelectronic component to electromagnetic radiation emitted ⁇ least partially to convert electromagnetic radiation in a wavelength walls ⁇ ren.
  • the wavelength-converting element is embedded in the shaped body.
  • the optoelectronic component therefore does not have to be equipped with a further external wavelength-converting element.
  • the wavelength-converting element embedded in the shaped body can also form a recess in the shaped body, which serves as a reflector for bundling electromagnetic radiation emitted by the optoelectronic semiconductor chip. Furthermore, in the production of this optoelectronic component, the wavelength-converting element can serve as a spacer and cause protection of a bonding wire connected to the optoelectronic semiconductor chip.
  • the optoelectronic component are the tops of opposing lower surfaces of the lead frame portions on an underside of the optoelectronic device ⁇ rule at least partially exposed.
  • the uncovered on the underside of the optoelectronic component undersides of the leadframe sections can thereby form LötWallet ⁇ surfaces of the optoelectronic device and are used for electrical contacting of the optoelectronic device.
  • the optoelectronic component may be suitable for example as an SMD for surface mounting by the fact, for example, for surface mounting by How To ⁇ deraufschmelzlöten (reflow soldering).
  • the first leadframe section has a first contact recess on its underside.
  • the second Lei ⁇ terrahmenabrough on its underside on a second contact recess both adjoin a first edge of the underside of the optoelectronic component.
  • the adjacent to the first edge of the underside of the optoelectronic component contact recesses of the leadframe portions of this optoelectronic device can form LötWalletflä ⁇ surfaces of the optoelectronic device.
  • the opto-electronic component for mounting in a sidelooker arrangement in which the top surface of the optoelectronic semiconductor chip is oriented perpendicular to the mounting plane so that is emitted by the optoelectronic semiconductor chip emitted light in to the mounting plane parallel Rich ⁇ processing.
  • the solder contact ⁇ surfaces of the optoelectronic component as Griffinausneh- regulations they can form Lötkon ⁇ control structures that ermögli a visual inspection of correct assembly of the optoelectronic component ⁇ chen advantageously simultaneously.
  • the fact that the contact recesses of the optoelectronic component are arranged on the lower sides of the Porterrahmenab ⁇ sections , resulting in the assembly of the optoelectronic component assembly tolerances are advantageously reduced.
  • the first leadframe section has on its underside a first further contact recess.
  • the second conductor frame section has a second further contact recess on its underside.
  • Both the first further Maisaus ⁇ recess and the second further contact recess are adjacent to a second edge of the underside of the optoelectronic component.
  • this results in a symmetrical configuration of the optoelectronic component.
  • the symmetrical design of the opto electro ⁇ African component it is possible to arrange the optoelectronic component in two different orientations. As a result, the optoelectronic component can advantageously be used in a particularly versatile manner.
  • the contact recesses do not extend completely through the leadframe sections.
  • this allows a particularly simple electrical contacting of the optoelectronic component.
  • the optoelectronic component is at the bottom of the optoelectronic component a Protective chip arranged and electrically conductively connected to the first lead frame portion and the secondêtrahmenab ⁇ section .
  • the protective chip is thereby electrically connected in parallel to the optoelectronic semiconductor chip of the optoelectronic component.
  • the protection chip can ⁇ example, a protection of the optoelectronic semiconductor chips of the optoelectronic component from being damaged by electrostatic discharge serve.
  • a method of manufacturing an optoelectronic device comprises the steps of providing a lead frame having a first lead frame portion and a second Lei ⁇ terrahmenabites, each having a top surface for disposing an optoelectronic semiconductor chip on the first lead frame portion and for embedding the first lead frame portion, the second lead frame portion and of the optoelectronic semiconductor chip in the Common a ⁇ men molding.
  • the upper sides of the leadframe sections are completely covered by the optoelectronic semiconductor chip and the molded body.
  • the optoelectronic semiconductor chip can be, for example, a light-emitting semiconductor chip or a light-detecting semiconductor chip, in particular, for example, a light-emitting diode chip.
  • the obtainable by the process optoelectronic component can ⁇ example, for use as backlighting for liquid crystal screens in mobile electronic devices are suitable.
  • the method comprises the ready ⁇ provide the lead frame comprises a step of forming a first contact recess on an underside of the first lead frame portion and a second contact recess on an underside of the second lead frame portion.
  • the contact recesses can be provided before embedding the lead frame sections in the molding with a coating that improves the solderability of the contact recesses.
  • the contact recesses are suitable to the lower surfaces of the lead frame portions of the available by this method optoelectronic device, advantageously for USAGE ⁇ dung as solder pads for electrically contacting the available by the process of the optoelectronic component.
  • the contact recesses are applied as blind holes on the undersides of the leadframe sections.
  • the contact recesses in the optoelectronic component obtainable by the method thereby provide a large surface which can be wetted by solder, thereby enabling reliable electrical contacting of the optoelectronic component obtainable by the method.
  • the method comprises the ready ⁇ provide the lead frame comprises a step of disposing a coating on a surface of the lead frame.
  • the Be ⁇ coating may for example serve to improve the solderability of the lead frame portions of the lead frame, in particular the wettability of the electrical Kunststoff ⁇ orientation obtainable by the process of the optoelectronic component serving portions of the lead frame portions by solder.
  • the leadframe is provided with a plurality of further leadframe sections .
  • all leadframe portions of the lead frame ⁇ be embedded together in the molding.
  • the method comprises a further step for dividing the shaped body and the leadframe in order to separate the optoelectronic component.
  • the method thereby enables a parallel production of a plurality of optoelectronic components in common processing steps. hereby The cost of fabricating a single optoelectronic device and the time required to fabricate a single optoelectronic device are reduced.
  • the leadframe is split along a parting plane that extends through the first contact recess and through the second contact recess.
  • the contact recesses in which obtainable by the process opto-electronic components are element characterized opened to side surfaces of the optoelectronic component through, enabling mounting of the available by the procedural ⁇ ren optoelectronic component in an Si delooker arrangement.
  • the shaped body is formed by means of a molding process.
  • the shaped body can be formed by injection molding (tear molding) or by injection molding (injection molding).
  • the method thereby enables a simple, inexpensive and well reproducible production of the molding.
  • 1 is a perspective view of upper sides of Lei ⁇ terrahmenabroughen a lead frame.
  • FIG. 2 shows a perspective view of lower sides of the conductor frame sections
  • Fig. 3 is a sectional side view of the arrayed on a support foil ⁇ lead frame portions; 4 shows a sectional side view of theêtrahmenab ⁇ sections with an optoelectronic semiconductor chip arranged thereon; 5 is a perspective view of the Anthonyrahmenabschnit ⁇ te and arranged thereon optoelectronic semiconductor chip.
  • Fig. 6 is a sectional side view of thenatidomenab- sections and of the optoelectronic semiconductor chip according ih ⁇ rer embedding in a molded body;
  • Figure 7 is a sectional side view of one of the Formkör ⁇ per formed first optoelectronic component after the peeling of the carrier foil.
  • FIG. 8 is a perspective view of the first optoelectronic component ⁇ rule. 9 shows a perspective view of a component arrangement comprising the first opto ⁇ electronic component;
  • FIG. 10 shows a sectional side view of a second opto ⁇ electronic component.
  • 11 is a sectional side view of a third opto ⁇ electronic component.
  • FIG. 12 shows a sectional side view of a fourth optoelectronic component
  • FIG. 13 is a sectional side view of a fifth opto ⁇ electronic component.
  • 14 shows a sectional side view of conductor frame sections of a further leadframe arranged on a carrier foil;
  • Figure 15 is a sectional side view of Porterrahmenab ⁇ sections having disposed thereon another opto electro ⁇ African semiconductor chip.
  • 16 shows a sectional side view of theêtrahmenab ⁇ sections and the optoelectronic semiconductor chip in a subsequent processing state;
  • FIG. 17 shows a sectional side view of the lead frame sections and the optoelectronic semiconductor chip with a cover element arranged thereon;
  • Figure 18 is a sectional side view of Porterrahmenab ⁇ cuts, of the optoelectronic semiconductor chip and the de- ckelements to their embedding in a molded body.
  • FIG. 19 shows a sectional side view of a sixth optoelectronic component formed from the molded body after detachment of the carrier film
  • Fig. 20 is a sectional side view of a seventh opto ⁇ electronic device.
  • FIG. 1 shows a schematic perspective view of part of a lead frame 300.
  • Fig. 2 shows a specific ⁇ matic perspective view of the part of autismrah ⁇ mens 300 from a different viewing direction.
  • the lead frame 300 may also be referred to as a leadframe.
  • FIGS. 1 and 2 show a first leadframe section 100 and a second leadframe section 200 of the leadframe 300.
  • the lead frame 300 generally includes in Figures 1 and 2, not shown, further Porterrahmenab ⁇ sections, which are formed as the first lead frame portion 100 and the second lead frame portion 200.
  • a first lead frame portion 100 and a second Porterrah ⁇ menabexcellent 200 of the lead frame 300 form a sixteenge ⁇ hearing pair.
  • All leadframe sections of the leadframe 300 are integrally connected in one piece with the same material. connected to each other. In this case, however, the first leadframe sections 100 and second leadframe sections 200 forming a pair are not directly connected to one another, but only via the adjacent further leadframe sections. Also, the pair shown in Figures 1 and 2 of the first lead frame portion 100 and the second Porterrah ⁇ menabitess 200 is not directly connected.
  • the leadframe 300 is substantially flat and flat and can be made of sheet metal, for example. Openings arranged in the leadframe 300, which may have been applied by means of an etching process, for example, delimit the first leadframe section 100 and the second leadframe section 200 from one another.
  • the first leadframe section 100 has an upper side 101 and an underside 102 opposite the upper side 101.
  • the second leadframe section 200 has an upper side 201 and a lower side 202 opposite the upper side 201.
  • Fig. 1 the upper sides 101, 201 of the lead frame sections 100, 200 are visible. 2 shows the lower sides 102, 202 of the leadframe sections 100, 200.
  • the lead frame 300 comprises an electrically conductive material, preferably a metal.
  • the conductor frame 300 may comprise copper.
  • a coating 301 may be arranged, for example, a solderability and / or an opti ⁇ cal reflectivity of the lead frame 300 can improve.
  • the first leadframe section 100 of the leadframe 300 has on its underside 102 a first contact recess 110 and a first further contact recess 120.
  • the second leadframe section 200 has on its underside 202 a second contact recess 210 and a second further contact recess 220.
  • the contact recesses 110, 120, 210, 220 are respectively in edge regions of the lower sides 102, 202 of the lead frame portions 100, 200 Zvi ⁇ rule at the boundaries of the lead frame portions 100, 200 and other adjacent lead frame portions of the lead frame 300 is located.
  • the contact recesses 110, 120, 210, 220 may extend beyond the leadframe sections 100, 200 shown in FIG. 2 to the respectively adjacent leadframe sections of the leadframe 300.
  • the first contact recess 110 and the first further contact recess 120 of the first leadframe section 100 are arranged on opposite sides of the first leadframe section 100. Accordingly, the second contact recess 210 and the second further contact recess 220 are arranged on opposite sides of the second leadframe section 200.
  • the first contact recess 110 of the first leadframe section 100 and the second contact recess 210 of the second leadframe section 200 are arranged in the mutually opposite arrangement of the first leadframe section 100 and the second leadframe section 200 on a common first side.
  • the first further contact recess 120 of the ERS ⁇ th lead frame portion 100 and the second further Kon ⁇ taktaus constructiveung 220 of the second lead frame portion are arranged on a common second side.
  • the contact recesses 110, 120, 210, 220 are in each case embodied as recesses or blind holes, which extend incompletely through the leadframe sections 100, 200, on the undersides 102, 202 of the leadframe sections 100, 200.
  • the contact recesses 110, 120, 210, 220 may have been created at ⁇ example by means of an etching process.
  • the beyond the boundaries of the first lead frame portion 100 and the second lead frame portion 200 to Benach ⁇ disclosed lead frame portions extending Girausneh- rules 110, 120, 210, 220 approximately circular cross-sections may for example each have.
  • the lower sides 102, 202 of the first lead frame section 100 and the second lead frame section 200 may be attached.
  • arranged parts of the contact recesses 110, 120, 210, 220 each have semicircular cross sections.
  • the coating 301 of the leadframe 300 preferably also extends to the contact recesses 110, 120, 210, 220.
  • the first conductor frame portion 100 and the second Porterrah ⁇ menabites 200 of the lead frame 300 are formed in the example shown in Figures 1 and 2 example, mirror-symmetrical to each other. However, this is not mandatory. It is possible to form the first lead frame portion 100 and the second lead frame portion 200 with different Geo ⁇ geometries and / or different sizes.
  • Fig. 3 shows a schematic sectional side view of the first lead frame portion 100 and the secondêtrah ⁇ menabitess 200 of the lead frame 300 in one of depicting ⁇ development of Figures 1 and 2 in time subsequent processing status.
  • the lead frame 300 has been arranged on a carrier foil 310.
  • the lower sides 102, 202 of the leadframe sections 100, 200 face the carrier foil 310.
  • the Trä ⁇ gerfolie 310 may be for example a self-adhesive film adhered to the lower surfaces 102, 202 of the lead frame portions 100, 200 of the lead frame 100th
  • this carrier covers all raised portions of the lower sides 102, 202 of the first lead frame portion 100 and the second lead frame portion 200 in a sealing manner.
  • the carrier can be designed for this purpose, for example with a soft surface, making it possible ⁇ light, the lower surfaces 102, 202 of the lead frame portions 100, 200 of the lead frame 300 easily into the carrier designeddrü ⁇ CKEN.
  • FIG. 4 shows a schematic sectional side view of the leadframe sections arranged on the carrier foil 310 100, 200 of the lead frame 300 in a representation of FIG. 3 temporally subsequent processing status.
  • FIG. 5 shows a schematic perspective illustration of the leadframe sections 100, 200 arranged on the carrier foil 310 in the processing state shown in FIG. 4.
  • An optoelectronic semiconductor chip 400 has been arranged on the upper sides 101, 201 of the first leadframe section 100 and of the second leadframe section 200 facing away from the carrier foil 310.
  • the opto-electronic semi-conductor chip ⁇ 400 is the emission or detection of electromagnetic radiation, such as visible light, is formed.
  • the optoelectronic semiconductor chip 400 can be designed, for example, as a light-emitting diode chip (LED chip), as a laser chip or as a photodiode chip.
  • the optoelectronic semiconductor chip 400 has an upper side
  • the top surface 401 of the optoelectronic semiconductor chip 400 forms a radiation passage area of the opto ⁇ electronic semiconductor chip 400. If the optoelectronic semiconductor chip 400 is formed as a light-emitting semiconductor chip, the upper surface 401 forms a radiation ⁇ emitting surface to which the optoelectronic semiconductor chip emitted 400 electromagnetic radiation. If the opto-electronic ⁇ semiconductor chip 400 is designed to detect electromagnetic radiation ⁇ Tischer, the optoelectronic semiconductor chip 400 can detect incident light 401 on its top.
  • the optoelectronic semiconductor chip 400 is so arranged that the bottom 402 of the optoelectronic semiconductor chip 400 to the tops 101, 201 of the lead frame portions 100, 200 is supplied ⁇ Wandt and with the top surfaces 101 to the tops 101, 201 of the first lead frame portion 100 and the second lead frame portion 200 , 201 of theêtrahmenab ⁇ sections 100, 200 is in contact.
  • the optoelectronic semiconductor chip 400 extends bridge-shaped from the Top 101 of the first lead frame portion 100 to the upper ⁇ side 201 of the second lead frame portion 200th
  • the optoelectronic semiconductor chip 400 has, on its bottom side 402 to a first electrical contact surface 410 and ei ⁇ ne second electrical contact surface 420th By Anord ⁇ voltage of the optoelectronic semiconductor chip 400 to the tops 101, 201 of the first lead frame portion 100 and the second lead frame portion 200, the first electrical contact surface 410 is electrically connected to the first conductor ⁇ frame portion 100 and the second electrical contact surface 420 in an electrically conductive second with the Lead frame section 200 connected.
  • the electrically conductive connections can be made for example via solder joints, which are also used for mechanical attachment of the optoelectronic
  • FIG. 6 shows a schematic sectional side view of the leadframe sections 100, 200 of the leadframe 300 and of the optoelectronic semiconductor chip 400 in a processing state which follows the representation of FIGS. 4 and 5.
  • the first lead frame portion 100 of the second lead frame portion ⁇ 200 and the optoelectronic semiconductor chip 400 have been embedded together in a molding 500th
  • the molded body 500, the lead frame sections 100, 200 embedded in the molded body 500, and the molded body 500 embedded optoelectronic semiconductor chip 400 form ge ⁇ jointly a composite body 600th
  • the molded body 500 comprises an electrically insulating Formma- on TERIAL, for example a silicone and / or an epoxy resin ⁇ .
  • the molded body 500 may be formed, for example, by a molding method (molding method), for example, by transfer molding (transfer molding) or by
  • Injection molding injection molding
  • film-assisted molding film-assisted Trans ⁇ fer Molding
  • the lead frame portions 100, 200 and the optoelectronic semiconductor chip are preferably embedded 400 be ⁇ already during formation of the molded body 500 in the form ⁇ body 500 by the lead frame portions 100, 200 and the optoelectronic semiconductor chip 400 with the material of the molding 500 were transformed.
  • the molded body 500 has an upper side 501 and a lower side 502 opposite the upper side 501.
  • the underside 502 of the molded body 500 has been formed adjacent to the carrier film 310.
  • the upper side 401 of the opto ⁇ electronic semiconductor chip 400 has not been at least partially covered by the material of the molded body 500 and is at least partially exposed at the top 501 of the molding 500.
  • the upper side 401 of the optoelectronic semiconductor chip 400 preferably terminates approximately flush with the upper side 501 of the molded body 500. Together, the upper side 401 of the optoelectronic semiconductor chip 400 and the upper side 501 of the molded body 500 form an upper side 601 of the composite body 600.
  • the adjoining the carrier film 310 undersides 102, 202 of the first lead frame portion 100 and the second conductor ⁇ frame portion 200 are at least partially not covered by the material of the molding 500, and are thus at ⁇ least partially on the bottom 502 of the mold body 500 free.
  • the bottom 102 of the first Lei ⁇ terrahmenabitess 100, the bottom 202 of the second Lei ⁇ terrahmenabitess 200 and the bottom 502 of the close Formkör- pers 500 essentially flush with each other.
  • the lower surfaces 102, 202 of the lead frame portions 100, 200 and the bottom 502 form the molded body 500, a Un ⁇ underside 602 of the laminated body 600th
  • FIG. 7 shows a schematic sectional side view of the composite body 600 in a timing subsequent to FIG processing status. From the composite body 600, a first optoelectronic component 10 has been formed.
  • FIG. 8 shows a schematic perspective view of the first optoelectronic component 10.
  • the carrier film 310 has been detached from the Untersei ⁇ te 602 of the composite body 600.
  • the detachment of the carrier film 310 may be effected, for example, by mechanical removal of the carrier film 310.
  • first lead frame portion 100 and the second lead frame portion of the lead frame 300 shown in Figures 1 and 2 can, as already stated, comprise 200 additional lead frame portions, which as the first Aberrah ⁇ menabêt 100 and the second lead frame portion are formed 200th
  • the leadframe 300 is arranged on the carrier foil 310 with all the leadframe sections in the processing state shown in FIG.
  • an optoelectronic semiconductor chip 400 is disposed, as shown in FIG. 4. All leadframe sections 100, 200 of the Leadframe 300 and all optoelectronic semiconductor chips 400 are embedded together in the molding 500.
  • the molded body 500 and the lead frame 300 embedded in the molded body 500 are diced to singulate the plurality of first optoelectronic devices 10 thus formed.
  • each first optoelectronic component 10 formed by the dicing comprises a portion of Formkör ⁇ pers 500, in which a first lead frame portion 100, a second lead frame portion 200 and a optoelekt ⁇ ronischer semiconductor chip 400 embedded are.
  • the division of the molded body 500 and the body 500 of Embedded in the form of th lead frame 300 may, for example, by sawing ⁇ SUC gene.
  • each first opto-electronic component 10 is, inter alia, at a first
  • the first parting plane 610 extends through the first contact recess 110 on the lower side 102 of the first leadframe section 100 and through the second contact recess 210 on the lower side 202 of the second leadframe section 200.
  • the second parting plane 620 extends through the first further contact recess 120 on the lower side 102 of the first lead frame portion 100 and through the second further contact recess 220 at the bottom 202 of the second lead frame portion 200 having a first edge 611 of the Untersei ⁇ te 602 of the composite body 600 of the first opto-electronic component 10 is formed at the first partition plane 610th
  • a second edge 621 of the underside 602 of the composite body 600 of the first optoelectronic component 10 is formed.
  • the first contact recess 110 and the second contact recess 210 both adjoin the first edge 611 of the underside 602 of the composite body 600.
  • the first further contact The recess 120 and the second further contact recess 220 of the first optoelectronic component 10 both adjoin the second edge 621 of the underside 602 of the composite body 600.
  • the top surface 601 of the composite body 600 forms a Obersei ⁇ te of the first optoelectronic component 10.
  • the lower surface 602 of the composite body 600 forms a bottom of the first optoelectronic component 10th
  • Fig. 9 shows a schematic perspective view of a component arrangement 700.
  • the component arrangement 700 comprises a support 730 and the first optoelectronic construction ⁇ element 10.
  • the carrier 730 can be designed, for example, as a printed circuit board or as another circuit carrier.
  • the carrier has on its upper side electrical contact surfaces.
  • the first opto-electronic device 10 is disposed on the Obersei ⁇ te of the support 730th In this case, a side surface of the first opto ⁇ electronic component 10 formed on the first parting plane 610 faces the upper side of the support 730.
  • the upper side 401 of the optoelectronic semiconductor chip 400 is thus oriented perpendicular to the upper side of the carrier 730.
  • the first optoelectronic component 10 be ⁇ thus found in a sidelooker arrangement.
  • the optoelectronic semiconductor chip 400 of the first opto-electro ⁇ African component 10 is a light-emitting semiconductor chip 400 so light emitted by the optoelectronic semiconductor chip 730 is radiated in the direction parallel to the upper side of the carrier.
  • the first optoelectronic component 10 is connected via a first solder connection 710 and a second solder connection 720
  • the first solder connection 710 connects an electrical contact surface of the carrier 730 with the first contact recess 110 of the first conductor frame portion 100 of the first optoelectronic Bauele ⁇ ment 10.
  • the second solder joint 720 connects a further electrical contact surface of the carrier 730 electrically connected to the second contact recess 210 of the secondêtrah- menabitess 200 of the first optoelectronic component 10th
  • the contact recesses 110 can , 210 during the manufacture of the solder joints 710, 720 effect a self-alignment of the first optoelectronic component 10 relative to the support 730.
  • the first contact recess 110 and the second contact recess 210 may serve as solder control structures and allow optical control of the correct formation of the first solder connection 710 and the second solder connection 720.
  • the first optoelectronic component 10 can as an alternative to the embodiment shown in Fig. 9 arrangement, in which the side edge of the first optoelectronic component 10 formed on the first separation layer 610, the upper side of the carrier is supplied ⁇ Wandt 730, also arranged on the carrier 730 be that the formed on the second parting plane 620 side edge of the first optoelectronic device 10 facing the top of the support 730.
  • the first further contact recess 120 and the second further contact ⁇ recess 220 of the first optoelectronic component 10 for electrically contacting the first optoelectronic component 10 can be used.
  • the optoelectronic semiconductor chip 400 of the first optoelectronic component 10 is a light emitting semiconductor chip, electromagnetic radiation emitted by the optoelectronic semiconductor chip 400 is radiated in this direction in the direction perpendicular to the top of the carrier 730 Rich ⁇ direction.
  • the planar portions of the bottom side 102 of the first leadframe section 100 and the underside 202 of the second leadframe section 200 may serve to form the solder bonds 710, 720.
  • FIG. 10 shows a schematic sectional side view of a second optoelectronic component 20.
  • the second optoelectronic component 20 has great similarities with the first optoelectronic component 10 and can be produced using the method explained with reference to FIGS. 1 to 9.
  • Components of the second optoelectronic component 20 which correspond to components present in the first optoelectronic component 10 are provided with the same reference symbols in FIG. 10 as in FIG. 7.
  • the second optoelectronic component 20 differs from the first optoelectronic component 10 through a valve disposed on the top surface 601 of the composite body 600 waves ⁇ nostinkonvertierendes element 800.
  • the wellenauernkonvertie ⁇ Rende member 800 extends only over part of the upper surface 601 of the composite body 600. extends case the wavelength-converting element 800 via at least a ⁇ part of the upper side 401 of the optoelectronic semiconductor chip 400.
  • the wavelength-converting element 800 of the second opto-electronic component 20 is provided to convert at least a portion of electromagnetic radiation emitted by the optoelectronic semiconductor chip 400 into electromagnetic radiation of another wavelength.
  • the wavelength-converting element 800 may be configured to convert electromagnetic radiation having a wavelength from the blue or ultraviolet spectral range into electromagnetic radiation having a wavelength from the yellow or orange spectral range.
  • a mixture of unconverted and converted by the wavelength converting element 800 light may have a white color impression.
  • the wavelength converting element 800 may have been formed as platelets and, for example, by means of a Transferverfah ⁇ proceedings on the upper surface 601 of the composite body 600 of the second optoelectronic component 20.
  • the arrangement of the wavelength-converting element 800 on the top side 601 of the composite body 600 may be effected before or after a singulation of the composite body 600.
  • the wavelength-converting element 800 can also be arranged by a printing or spraying method using a mask on the upper side 601 of the composite body 600 of the second optoelectronic component 20. Also in this case the arrangement of the wavelength converting element 800 on the top 601 of the Verbundkör ⁇ pers can be carried 20,600 before or after the separation of the composite body 600 of the second optoelectronic component.
  • FIG. 11 shows a schematic sectional side view of a third optoelectronic component 30.
  • the third optoelectronic component 30 has great similarities with the first optoelectronic component 10 and with the second optoelectronic component 20 and can likewise be produced by the method described with reference to FIGS. 1 to 9 become.
  • Components of the third optoelectronic component 30 which correspond to components present in the second optoelectronic component 20 are provided with the same reference symbols in FIG. 11 as in FIG. 10.
  • the third optoelectronic component 30 differs from the second optoelectronic component 20 in that the wavelength converting element 800 of the third Optoelectronic component 30, the entire upper surface 601 of the composite body 600 of the third optoelectronic component 30 Bau ⁇ ⁇ covered.
  • the wavelength-converting element 800 thus extends over the complete upper side 401 of the optoelectronic semiconductor chip 400 and over the complete upper side 501 of the shaped body 500.
  • the wavelength-converting element 800 of the third opto ⁇ electronic component 30 may for example be arranged by means of a molding process (molding process) on the top 601 of the composite body 600, in particular in ⁇ example by compression molding (compression molding). It is also possible, for example, to spray or welleninkonvertie ⁇ Rende element 800 to stick in the form of a wavelength-genkonvertierenden film.
  • the wavelength converting element 800 is preferably before the club individually ⁇ of the molded body 600 of the third opto-electronic device 30 on the top surface 601 of the composite body 600 at ⁇ sorted.
  • FIG. 12 shows a schematic sectional side view of a fourth optoelectronic component 40.
  • the fourth optoelectronic component 40 has great similarities with the first optoelectronic component 10 and can be produced by the method described with reference to FIGS. 1 to 9. Components of the fourth optoelectronic component 40 which correspond to components present in the first optoelectronic component 10 are provided with the same reference symbols in FIG. 12 as in FIG. 7.
  • the fourth optoelectronic component 40 differs from the first optoelectronic component 10 by an optical element 810 arranged on the upper side 601 of the composite body 600 of the fourth opto ⁇ electronic component 40.
  • the optical element 810 extends over the entire upper surface 601 of the collar body Ver ⁇ 600. however, it is also possible to loading the optical element 810 to a portion of the top 601 of the Verbundkör ⁇ pers 600 of the fourth optoelectronic component 40 restrict, for example, on the top 401 of the opto ⁇ electronic semiconductor chip 400th
  • the optical element 810 causes a beam shaping by the optoelectronic semiconductor chip 400 of the fourth optoelectronic component 40 emitted electromagnetic radiation, or a bundling of the fourth optoelectrochemical ⁇ African device 40 apt electromagnetic radiation on the upper surface 401 of the optoelectronic semiconductor chip 400.
  • the optical element 810 in the example shown ge ⁇ as plano-convex optical lens formed in Fig. 12.
  • the optical element 810 comprises an optically transparent Ma ⁇ TERIAL, for example a silicone.
  • the optical element 810 may have been arranged 40 for example by a molding process on the upper surface 601 of the composite 600 of the fourth electro-opto ⁇ African component, in particular for example by molding.
  • the arrangement of the optical element 810 on the top side 601 of the composite body 600 may be effected before or after the singulation of the composite body 600 of the fourth optoelectronic component 40.
  • 13 shows a schematic sectional side view of a fifth optoelectronic component 50.
  • the fifth optoelectronic component 50 has great similarities with the first optoelectronic component 10, the second optoelectronic component 20 and the fourth optoelectronic component 40 and can be compared to that with reference to FIGS 1 to 9 described methods. Also in Fig.
  • the fifth optoelectronic component 50 has both a wavelength-converting element 800 and an opti ⁇ cal element 810.
  • the wellenexcellentnkonvertie ⁇ Rende element 800 is directly on the top 601 of the collar Ver ⁇ body 600 of the fifth optoelectronic component 50 arranged and covers at least a part of the upper ⁇ side 401 of the optoelectronic semiconductor chip 400 umfas ⁇ send ⁇ part of the top 601 of the composite body 600.
  • the op ⁇ table element 810 is disposed over the wavelength converting element 800 and extends in the illustrated
  • the wavelength-converting element 800 of the fifth opto ⁇ electronic component 50 is used, as the wavelength-converting element 800 of the second optoelectronic Bau ⁇ elements 20, for wavelength conversion of at least a portion of the emitted by the optoelectronic semiconductor chip 400 electromagnetic radiation.
  • the optical element 810 of the fifth optoelectronic component 50 like the optical element 810 of the fourth optoelectronic component 40, serves to beamform the converted and unconverted electromagnetic radiation.
  • the wavelength-converting element 800 of the fifth opto ⁇ electronic component 50 may be made as the wavelength-converting element 800 of the second optoelectronic component 20.
  • the optical element 810 of the fifth optoelectronic component 50 may have been produced in a subsequent processing step, such as the optical element 810 of the fourth optoelectronic component 40.
  • FIGS. 14 to 19 a method is shown for producing an optoelectronic component below which has strong similarities to that described with reference to Figu ⁇ ren 1 to 9 methods. Therefore, in FIGS. 14 to 19, the same reference numerals are used as in FIGS. 14 to 19, the same reference numerals are used as in FIGS. 14 to 19, the same reference numerals are used as in FIGS. 14 to 19, the same reference numerals are used as in FIGS. 14 to 19
  • FIG. 14 shows a schematic sectional side view of a leadframe 1300 arranged on a carrier foil 310.
  • the leadframe 1300 is designed like the leadframe 300 and comprises a first leadframe section 100, a second leadframe section 200 and a plurality of further leadframe sections, not shown in FIG as the first lead frame portion 100 are formed and the second Lei ⁇ terrahmenabites 200th
  • the first conductor ⁇ frame portion 100 and the second lead frame portion 200 of the lead frame 1300 are not mirror-symmetrical to each other.
  • the first ladder frame portion 100 of the lead frame 1300 has a larger area than the second lead frame portion 200 of the lead frame 1300.
  • the rest of the design of the lead frame portions 100, 200 of the lead frame 1300 corresponds to the lead frame portions 100, 200 of the lead frame 300.
  • the Lei ⁇ terrahmenabête 100, 200 of the lead frame 1300 at their bottoms 102, 202 are designed as blind holes con- taktaus fundamentalungen 110, 120 , 210, 220 on.
  • Fig. 15 shows the lead frame portions 100, 200 of the lead frame ⁇ 1300 in one of the representation of FIG. 14 temporally succeeding processing status.
  • an optoelectronic semiconductor chip 1400 On the upper side 101 of the first leadframe section 100, an optoelectronic semiconductor chip 1400 has been arranged.
  • the optoelectronic semiconductor chip 1400 is arranged completely on the upper side 101 of the first Porterrahmenab ⁇ section 100 and does not extend maschinenför- mig to the top 201 of the second leadframe portion 200th
  • the optoelectronic semiconductor chip 1400 may be a lichtemit ⁇ animals missing or a trained for detecting light optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip 1400 differs from the optoelectronic semiconductor chip 400 in that the second electrical contact surface 420 of the optoelectronic semiconductor chip 1400 is arranged on the upper side 401 of the optoelectronic semiconductor chip 1400.
  • the formed on the underside 402 of the optoelekt ⁇ tronic semiconductor chip 1400 first electrical contact area 410 is, for example, by means of a Lotver ⁇ bond, electrically conductively connected to the first lead frame portion 100 of the lead frame 1300th
  • FIG. 16 shows a schematic sectional side view of the leadframe 1300 and of the optoelectronic semiconductor chip 1400 in a processing state following the representation of FIG. 15.
  • the second electrical contact surface 420 of the optoelectronic semiconductor chip 1400 arranged on the upper side 401 of the optoelectronic semiconductor chip 1400 has been connected in an electrically conductive manner to the second conductor frame section 200 of the leadframe 1300 by means of a bonding wire 430.
  • the bonding wire 430 extends from the upper side 401 of the optoelectronic semiconductor chip 1400 to the upper side 201 of the second leadframe section 200.
  • both electrical contact surfaces of the optoelectronic semiconductor chip may be arranged at the top of the optoelectronic semiconductor ⁇ semiconductor chip.
  • the opto ⁇ electronic semiconductor chip is selectively on the top 101 of the first lead frame portion 100, on the top 201 of the second lead frame portion 200 or bridged so ⁇ well on the top 101 of the first lead frame portion 100 and on the top 201 of the second lead frame portion 200th arranged.
  • the further processing takes place as in the case of the method described with reference to FIGS. 14 to 19.
  • FIG. 17 shows a schematic sectional side view of the leadframe 1300 and of the optoelectronic semiconductor chip 1400 in a processing state which follows the representation of FIG.
  • a cover element 820 On the upper side 401 of the optoelectronic semiconductor chip 1400, a cover element 820 has been arranged.
  • the framed deck element 820 covers part of the upper surface 401 of the optoelekt ⁇ tronic semiconductor chip 1400.
  • the portion of the upper surface 401 of the optoelectronic semiconductor chip 1400 on which the bonding ⁇ wire is secured 430 is recessed from the coverage by the De ⁇ ckelement 820th
  • the cover element 820 has, in a direction perpendicular to the upper side 401 of the opto ⁇ electronic semiconductor chip 1400, a height which is dimensioned so large that the cover element 820 projects beyond the bonding wire 430 in a direction perpendicular to the upper side 401 of the optoelectronic semiconductor chip 1400.
  • the cover member 820 may, for example, be formed as optically transpa ⁇ rentes platelets.
  • the cover element 820 may comprise, for example, a glass or a silicone.
  • the formed as a transparent plate cover member 820 may have on one side, for example on the top surface 401 of the optoelectronic semiconductor chip 1400 facing side, a coating which forms a wellendorfnkonvertie ⁇ rendes member 800 and at least egg nes to convert part of the by the optoelectronic semiconductor chip 400 emitted electromagnetic radiation is used in electromagnetic radiation of a different wavelength.
  • the Deckele ⁇ ment 820 can also be completely constructed as a wavelength-element.
  • FIG. 18 shows a schematic sectional side view of the leadframe 1300, the optoelectronic semiconductor chip 1400 and the cover element 820 in a processing state following the illustration of FIG. 17.
  • the lead frame 1300, the optoelectronic semiconductor chip 1400, the cover element 820 and the bonding wire 430 have been embedded in a molding 500. Together, the molded article 500 and the components embedded in the molded article 500 form a composite body 600.
  • the molded body 500 is formed with the descriptions ⁇ NEN method with reference to FIGS. 6 and has the same material as the molded body 500 of FIG. 6.
  • the carrier film 310 facing the bottom 602 are the lower surfaces 102, 202 of the lead frame portions 100, 200 of the leadframe 1300 are at least partially exposed and, together with the underside 502 of the molded body 500, form the underside 602 of the composite body 600.
  • On the upper side 601 of the composite body 600 is an upper ⁇ side of the cover member 820 at least partially free and bil ⁇ det, together with the upper surface 501 of the mold body 500, the upper surface 601 of the composite body 600.
  • closing the top of the cover member 820 and the top 501 of the molded body 500 substantially flush with each other.
  • the upper side 401 of the optoelectronic semiconductor chip 1400 is completely covered by the cover element 820 and the molded body 500.
  • the molded body 500 covers all sections ⁇ From the top 401 of the optoelectronic semiconductor chip in 1400, which had be ⁇ covers not already by the cover element 820th
  • the upper sides 101, 201 of the leadframe sections 100, 200 of the leadframe 1300 are also completely covered by the opto ⁇ electronic semiconductor chip 1400 and by the molded body 500.
  • the molded body 500 covers al ⁇ le portions of the tops 101, 201 of Porterrahmenab ⁇ sections 100, 200 of the lead frame 1300, which is not already were covered by the optoelectronic semiconductor chip 1400.
  • the embedded in the mold body 500 cover member 820 has side edges, which extend from the exposed at the top 601 of the composite body 600 top of the cover member 820 to the upper side 401 of the optoelectronic semiconductor chip ⁇ 1400 facing bottom of the cover member 820. These side edges are covered by the material of the molding 500.
  • the adjacent to the side edges of the De ⁇ ckelements 820 surfaces of the molded body 500 form a reflector 510.
  • the reflector 510 may reflect light emitted by the optoelectronic semiconductor chip 1400 of light and thereby cause beam focusing of emitted by the optoelectronic semiconductor chip 1400 of electromagnetic radiation.
  • FIG. 19 shows a schematic sectional side view of the composite body 600 in a representation of FIG. 18 temporally subsequent processing state.
  • the carrier film 310 has been peeled from the underside 602 of the laminated body ⁇ 600th
  • the composite body has been cut 600 to the first lead frame portion 100, the second lead frame portion 200 and the optoelekt ⁇ tronic semiconductor chip containing portion 1400 of the shaped body to separate the 500th
  • a sixth optoelekt ⁇ ronisches component has been formed 60th
  • the sixth optoelectronic component 60 is also suitable for mounting in a sidelooker arrangement and in a toplooker arrangement.
  • FIG. 20 shows a schematic sectional side view of a seventh optoelectronic component 70.
  • the seventh optoelectronic component 70 has large correspondences with the first optoelectronic component 10.
  • Corresponding components are provided with the same sectorsszei ⁇ surfaces as shown in Fig in Fig. 20. 7.
  • the seventh optoelectronic component 70 can be made with reference to the figures 1 to 9 erläu ⁇ failed process.
  • the seventh optoelectronic component 70 differs from the first opto-electronic device 10 through a arranged on the bottom 602 of the composite body 600 of the seventh optoelectronic component 70 protection chip 900.
  • the protective chip 900 may be formed for example as a protective diode and is at the bottom 602 of the composite ⁇ body 600 electrically connected to the first Aberrahmenab ⁇ section 100 and connected to the second lead frame section 200. As a result, the protective chip 900 is electrically connected in parallel or connected in antiparallel with the optoelectronic semiconductor chip 400 of the seventh optoelectronic component 70.
  • the protection chip 900 may serve to protect the optoelectronic semiconductor chip 400 of the seventh optoelectronic component 70 from damage due to electrostatic discharges.
  • the arrangement of the protective chip 900 on the underside 602 of the composite body 600 of the seventh optoelectronic component 70 may be effected before or after the dividing of the composite body 600 for separating the optoelectronic component 70.
  • the seventh optoelectronic component 70 is suitable for mounting in a sidelooker arrangement.
  • the seventh optoelectronic component 70 can be mounted using the first contact recess 110 and the second contact recess 210 or using the first further contact recess 120 and the second further contact recess 220.
  • the protective chip 900 present in the seventh optoelectronic component 70 may also be provided in the second optoelectronic component 20, the third optoelectronic component 30, the fourth optoelectronic component 40, the fifth optoelectronic component 50 or the sixth optoelectronic component 60.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant optoélectronique (10, 20, 30, 40, 50, 60, 70) qui comprend une première partie de grille de connexion (100), une seconde partie de grille de connexion (200) et une puce à semi-conducteur optoélectronique (400, 1400). La première partie de grille de connexion et la seconde partie de grille de connexion présentent chacune un côté supérieur (101, 201). La puce à semi-conducteur optoélectronique est disposée sur le côté supérieur (101) de la première partie de grille de connexion. La première partie de grille de connexion, la seconde partie de grille de connexion et la puce à semi-conducteur optoélectronique sont noyées ensemble dans un corps moulé (500). Les côtés supérieurs des parties de grilles de connexion sont complètement recouverts par la puce à semi-conducteur optoélectronique et le corps moulé.
PCT/EP2015/080803 2014-12-22 2015-12-21 Composant optoélectronique et procédé de fabrication de celui-ci WO2016102474A1 (fr)

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DE102016114478A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines trägers für ein optoelektronisches bauelement
DE102016114483A1 (de) * 2016-08-04 2018-02-08 Ic-Haus Gmbh Optoelektronisches Bauelement
DE102018118762A1 (de) * 2018-08-02 2020-02-06 Osram Opto Semiconductors Gmbh Laserbauelement mit einem Laserchip
DE102018130540A1 (de) * 2018-11-30 2020-06-04 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements
DE102019119371A1 (de) * 2019-07-17 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauteil und verfahren zur herstellung eines bauteils
DE102019220215A1 (de) * 2019-12-19 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement

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DE102009023854A1 (de) * 2009-06-04 2010-12-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US20110186902A1 (en) * 2010-01-29 2011-08-04 Kabushiki Kaisha Toshiba Led package and method for manufacturing same
EP2613369A1 (fr) * 2010-09-03 2013-07-10 Nichia Corporation Dispositif électroluminescent et son procédé de fabrication
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JP6078948B2 (ja) * 2012-01-20 2017-02-15 日亜化学工業株式会社 発光装置用パッケージ成形体及びそれを用いた発光装置

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DE102009023854A1 (de) * 2009-06-04 2010-12-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US20110186902A1 (en) * 2010-01-29 2011-08-04 Kabushiki Kaisha Toshiba Led package and method for manufacturing same
EP2613369A1 (fr) * 2010-09-03 2013-07-10 Nichia Corporation Dispositif électroluminescent et son procédé de fabrication
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