WO2015132380A1 - Composant optoélectronique et procédé de fabrication de celui-ci - Google Patents

Composant optoélectronique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2015132380A1
WO2015132380A1 PCT/EP2015/054710 EP2015054710W WO2015132380A1 WO 2015132380 A1 WO2015132380 A1 WO 2015132380A1 EP 2015054710 W EP2015054710 W EP 2015054710W WO 2015132380 A1 WO2015132380 A1 WO 2015132380A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead frame
semiconductor chip
optoelectronic
housing body
optoelectronic semiconductor
Prior art date
Application number
PCT/EP2015/054710
Other languages
German (de)
English (en)
Inventor
David Racz
Tobias Gebuhr
Michael Wittmann
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015132380A1 publication Critical patent/WO2015132380A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention relates to an optoelectronic component according to patent claim 1 and to a method for producing an optoelectronic component according to patent claim 11.
  • An object of the present invention is to provide an optoelectronic device. This object is achieved by an optoelectronic component having the features of claim 1.
  • Another object of the vorlie ⁇ constricting invention is to provide a method for producing an optoelectronic component. This object is achieved by a method having the features of claim 11.
  • the dependent claims specify various developments.
  • An optoelectronic component has a first conductor ⁇ frame section with an upper side, a secondêtrah- section with an upper side and an optoelectronic semiconductor chip.
  • the leadframe sections and the optoelectronic semiconductor chip are jointly embedded in a housing body with an upper side.
  • this optoelectronic component can be produced on a ⁇ ways and with a small number of
  • this opto electro ⁇ African component has a high mechanical stability because of the optoelectronic semiconductor chip is directly embedded in the housing body of the optoelectronic component. It can have small construction ⁇ part dimensions, the optoelectronic component, in particular a low Bauhö ⁇ hey.
  • the housing body of said optoelectronic component does not extend over a top surface of the optoelectronic semiconductor chip addition, can be brought very close to the optoelectronic semiconductor chip in this optoelekt ⁇ tronic device advantageously a light guide, whereby a coupling of electromagnetic radiation is made possible in the light guide with low Einkopplungs proofen.
  • the optoelectronic semiconductor chip on an upper surface which is flush with the upper surface of the housing body from ⁇ .
  • this is a coupling-out of radiation emitted by the optoelectronic semiconductor chip electromagnetic radiation of the optoelectronic component without much reflection and losses geometry made ⁇ light.
  • the flush termination between the upper side of the opto ⁇ electronic semiconductor chip and the top of the housing ⁇ body also advantageously allows to introduce a light guide very close to the optoelectronic semiconductor chip, which allows a simple coupling of emitted by the optoelectronic semiconductor chip electronic radiation in the light guide.
  • portions of the upper side of the first leadframe close Section and / or sections of the top of the second Lei ⁇ terrahmenabitess flush with the top of GeHousekör ⁇ pers from.
  • the embedded into the case body of the optoelectronic component lead frame portions thereby causing mechanical stabilization of the Ge ⁇ pliuse stressess of the optoelectronic component.
  • a cavity is formed ⁇ at the top of the housing body.
  • a top surface of the optoelectronic semiconductor ⁇ semiconductor chip is disposed on a base of the cavity.
  • ⁇ advantage adhesive enough can be a wall of the cavity as a reflector for by the optoelectronic semiconductor chip emitted elec- serve romagntician radiation.
  • the cavity can improve a decoupling of the electromagnetic radiation from the optoelectronic component and cause a bundling and direction of the electromagnetic radiation.
  • a covering layer is arranged on the upper side of the housing body.
  • the cover layer can cause protection of the exposed upper side of the optoelectronic semiconductor chip.
  • the cover layer may for example comprise a Si ⁇ Likon.
  • the covering layer is formed as a wavelength-converting layer.
  • the cover layer cause Konvertie ⁇ tion of a wavelength of a light emitted by the optoelectronic semiconductor chip electromagnetic radiation.
  • the covering layer can be provided to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip into the light of a wavelength from the blue or ultraviolet spectral range into white light.
  • the cover layer formed as a wavelength-converting layer may for example comprise from ⁇ embedded Kon ⁇ verterp motherboard.
  • the first lead frame portion and the second conductor ⁇ frame portion subpages have to be flush with a bottom ⁇ side of the housing body.
  • the undersides of the leadframe sections of the optoelectronic component can form electrical contact surfaces which serve for electrical contacting of the optoelectronic component from the outside.
  • the flush finish of the undersides of the lead frame portions with the underside of the device covers se emotionss the optoelectronic component can play as suitable as SMT component for surface mounting with ⁇ .
  • an etched recess is formed at the top of the first lead frame portion.
  • the optoelectronic ⁇ specific semiconductor chip in the recess is arranged at the top of the first lead frame portion.
  • the optoelectronic semiconductor chip is thereby partially surrounded by raised portions of the first leadframe section, resulting in a high mechanical stability of the housing body of the optoelectronic component.
  • the optoelectronic semiconductor chip is arranged on the first conductor frame section and on the second conductor frame section.
  • electrically conductive connections between the leadframe sections and electrical contact surfaces of the optoelectronic semiconductor chip can exist directly in the contact regions between the optoelectronic semiconductor chip and the leadframe sections.
  • the optoelectronic semiconductor chip may be formed in this embodiment, for example, as a flip chip, in particular, for example, as a sapphire flip-chip.
  • the optoelectronic semiconductor chip by a bonding wire ⁇ is connected to the second lead frame portion.
  • ⁇ geous enough can be made an electrically conductive connection between an electrode disposed on the top surface of the optoelectronic semiconductor chip electrical contact surface and the second lead frame portion by means of the bonding wire. This allows the optoelectronic semiconductor chip having on its underside, in this embodiment of the optoelectronic component, for example, a contact surface on its upper side and ei ⁇ ne contact surface.
  • the optoelectronic component has a third conductor frame section and a second optoelectronic semiconductor chip.
  • the optoelectronic half ⁇ conductor chip and the second optoelectronic semiconductor chip can be controlled independently.
  • the optoelectronic component can thereby have a high power with small spatial dimensions.
  • a method for producing an optoelectronic component comprises steps for providing a first leadframe section and a second leadframe section, for arranging an optoelectronic semiconductor chip on the first leadframe section, and for embedding the leadframe sections and the optoelectronic semiconductor chip in a housing body.
  • this method enables cost-effective production of an optoelectronic component.
  • the method advantageously has only a small number of individual process steps.
  • the obtainable by the process optoelectronic Bauele ⁇ ment may advantageously with low component dimensions, in particular with a low overall height can be formed. This allows a high packing density and thus a paralle ⁇ le production of a large number of optoelectronic devices simultaneously.
  • the method can advantageously be carried out inexpensively.
  • the process of embedding the lead frame portions and of the optoelectronic semiconductor ⁇ semiconductor chip into the housing body is made by a molding process, in particular by sheet-assisted transfer molding. Before ⁇ geous enough, it allows the method characterized to dispense ei ⁇ NEN process step for deburring (deflashing) or subsequent cleaning of the housing body. As a result, the method can advantageously be carried out simply and inexpensively.
  • an upper side of the optoelectronic semiconductor chip is covered with a foil during embedding. This advantageously ensures that the top of the optoelectronic
  • the method comprises a further step for connecting the optoelectronic semiconductor chip to the second lead frame portion by means of bonding wire ei ⁇ nes.
  • the second Lei ⁇ terrahmenabites obtainable by the process of the opto-electronic component ⁇ possible by an electrical contacting of the optoelectronic semiconductor chip of optoelekt ⁇ tronic device.
  • this comprises a further step for arranging a cover layer on an upper side of the housing body.
  • the cover layer can have a
  • a bonding wire arranged on the upper side of the housing body can also be embedded in the covering layer, as a result of which this bonding wire is also protected against damage by external mechanical influences.
  • the ab ⁇ cover layer can be formed additionally with embedded wavelength converting particles. In this Case can cause lung, the cover layer of the avai by the method ⁇ chen optoelectronic component advantageously has a conversion of a wavelength of a light emitted by the optoelectronic semiconductor chip electromagnetic radiation.
  • this comprises a further step for separating the optoelectronic component by dividing the housing body.
  • the method can thereby enable a parallel production of a large number of optoelectronic components in common operations.
  • the individual optoelectronic components are separated only after carrying out the common process steps. This advantageously reduces the production costs per individual opto ⁇ electronic component.
  • FIG. 1 shows leadframe sections of a first optoelectronic component
  • FIG. 2 shows the leadframe sections with an optoelectronic semiconductor chip arranged thereon
  • FIG. 3 shows a housing body in which the leadframe sections and the optoelectronic semiconductor chip have been embedded;
  • FIG. 4 shows the housing body with a bonding wire arranged above its upper side;
  • Fig. 5 the first optoelectronic component with the Gezzau ⁇ se emotions and, arranged on the housing body waste cap layer;
  • Fig. 6 lead frame portions of a second optoelectronic device ⁇ rule;
  • FIG. 8 shows a housing body in which the leadframe sections and the optoelectronic semiconductor chip are embedded
  • Fig. 10 lead frame portions and opto-electronic semi-conductor chips ⁇ a third optoelectronic component
  • FIG. 11 shows a housing body of a fourth optoelectronic component
  • FIG. 12 shows the housing body of the fourth optoelectronic component with a potting arranged in a cavity.
  • first leadframe section 110 and a second leadframe section 120 which are provided for producing a first optoelectronic component.
  • the first conductor frame portion 110 and the second Porterrahmenab ⁇ section 120 have an electrically conductive material respectively.
  • the first leadframe section 110 and the second leadframe section 120 preferably comprise a metal, for example copper.
  • the surfaces of the first leadframe portion 110 and / or the second leadframe portion 120 may additionally be partially or completely coated be, for example, with a coating that has silver.
  • the first conductor frame portion 110 and the second lead frame portion 120 may be formed as portions of a larger, sur fa ⁇ speaking lead frame, which is not completely shown in FIG. 1.
  • the first leadframe section 110 is in this case connected via connecting sections 116 to the remaining sections of the leadframe.
  • the second lead frame portion 120 is connected in this case via connec ⁇ tion sections 126 with the other sections of the lead frame.
  • the first leadframe section 110 and the second leadframe section 120 are also connected to one another via the further sections of the leadframe. However, in a later processing step, the first lead frame portion 110 and the second lead frame portion 120 are separated at the connection portions 116, 126 from the remaining lead frame portions. Thereafter, the first lead frame portion 110 and the second lead frame portion 120 are separated from each other and electrically isolated from each other.
  • the first conductor frame portion 110 and the second Porterrah ⁇ menabites 120 are substantially flat and laterally arranged side by side in a common plane.
  • the first leadframe section 110 has an upper side 111 and a lower side 112 opposite the upper side 111.
  • the second lead frame portion 120 has a Obersei ⁇ te 121 and the top surface 121 opposite Untersei- te 122.
  • a recess 113 is formed at the top 111 of the first leadframe portion 110.
  • the recess 113 may have been applied by etching, for example.
  • the top surface of the first conductor ⁇ frame portion 110 recessed top portions 115th Outside the recess 113 111, the top surface of the f th ⁇ lead frame portion 110 raised top portions 114, which are opposite the recessed top sections
  • the raised top portions 114 of the first lead frame portion 110 preferably at least partially surround the recessed top portions 115 on the top 111 of the first conductor frame portion 110 such that the raised top portions 114 form a frame about the recessed top portions 115.
  • the recess 113 forms an elongated channel at the top 111 of the first lead frame section 110, with the raised top sections 114 delimiting the recessed top sections 115 on both sides along the channel-shaped recess 113.
  • the top surface 121 of the second lead frame portion 120 includes top portions 124, which are arranged approximately in a common ⁇ ⁇ seed level with the raised top portions 114 at the top 111 of the first lead frame portion 110th
  • the first conductor frame portion 110 is in the illustrated case ⁇ play greater than the second lead frame portion 120.
  • first lead frame portion 110 and the second lead frame portion 120 equal in size, or make the second lead frame portion 120 larger as the first lead frame section 110.
  • Fig. 2 shows a schematic perspective view of the first lead frame portion 110 and the second conductor ⁇ frame portion 120 in one of the representation of FIG. 1 temporally succeeding processing status. On the top
  • the optoelectronic semiconductor chip 130 may include, for example Be LED chip (LED chip). However, the optoelectronic semiconductor chip 130 can also be, for example, a photodiode or an IR transmitter or receiver.
  • the optoelectronic semiconductor chip 130 is configured to see electromagnetic radiation, for example visible light, to absorb emittie ⁇ ren or at least partially. In operation of the optoelectronic semiconductor chip 130 emitted by the opto-electronic ⁇ semiconductor chip 130 electromagnetic ⁇ specific radiation on the upper side 131 is emitted, or
  • the optoelectronic semiconductor chip 130 irradiated by the optoelectronic semiconductor chip 130 absorbed electromagnetic radiation through its top side 131, a ⁇ .
  • the upper side 131 thus forms a radiation passage area of the optoelectronic semiconductor chip 130.
  • the optoelectronic semiconductor chip 130 is thus in the
  • the bottom 132 of the optoelekt ⁇ tronic semiconductor chip 130 may be connected to the frame section 110 for example via a glue joint, a solder joint or other chip bonding with the recessed upper side portions 115 in the recess 113 at the top 111 of the first conductor.
  • the top surface 131 of the optoelectronic semiconductor chip 130 is preferably substantially in a common plane with the erha ⁇ surrounded upper side portions 114 of the top 111 of the first lead frame portion 110.
  • the depth of the recess 113 at the top 111 of the first lead frame portion 110 is thus preferably on the thickness of the optoelectronic Half ⁇ conductor chips 130 between its top 131 and its Un ⁇ terseite 132 and an optionally added thickness of the connecting layer between the optoelectronic semiconductor chip 130 and the top 111 of the first lead frame portion 110 tuned.
  • the optoelectronic semiconductor chip 130 has an upper electrical contact surface 133 arranged on the upper side 131 and a lower electrical contact surface 134 arranged on the underside 132.
  • the lower electrical contact surface 134 is electrically conductively connected to the first leadframe section 110 via the chip bond connection between the lower side 132 of the optoelectronic semiconductor chip 130 and the upper side 111 of the first leadframe section 110. If the first lead frame portion 110 and the second Lei ⁇ terrahmenabites 120 are formed as portions of a larger, together ⁇ men technicalden lead frame, they will be disposed 110 of the lead frame before ⁇ Trains t terrahmenab mustarde in the recesses 113 of all first LEI during a joint working path optoelectronic semiconductor chip 130th
  • FIG. 3 shows a schematic perspective view of the first lead frame portion 110 of the secondnatiorah ⁇ menabitess 120 and the optoelectronic semiconductor chip 130 in one of the representation of FIG. 2 temporally succeeding processing status.
  • the first conductor frame portion 110, the second lead frame portion 120 and the optoelectronic ⁇ specific semiconductor chip 130 have been embedded together in a housing body 140th
  • the housing body 140 comprises an electrically insulating material.
  • the housing body 140 a synthetic ⁇ material on, for example, an epoxy resin or a Si ⁇ Likon.
  • the housing body 140 has an upper side 141 and an upper side 141 opposite the lower side 142. On the upper side 141 of the housing body 140, the upper side 131 of the optoelectronic semiconductor chip 130 is exposed. In addition, the top ⁇ side sections 124 of the top 121 of the second Porterrah ⁇ menabitess 120 are free at the top 141 of the housing body 140. Preferably, on the upper side 141 of the housing body 140 are also the raised Obertouchabschnit- te 114 of the top 111 of the first leadframe portion 110 free.
  • the upper side 131 of the optoelectronic semiconductor chip 130, the upper side sections 124 of the upper side 121 of the second leadframe section 120 and the raised upper side sections 114 of the upper side 111 of the first leadframe section 110 preferably terminate approximately flush with the upper side 141 of the housing body 140.
  • At the bottom 142 of the housing body 140 are at least parts of the bottom 112 of the first lead frame portion
  • the exposed portions of the bottom surfaces 112, 122 of the first lead frame portion 110 and the second lead frame portion 120 terminate approximately flush with the bottom surface 142 of the housing body 140.
  • the housing body 140 is preferably produced by a molding process.
  • the Ge ⁇ koruse stresses 140 by film-assisted molding is particularly preferably prepared.
  • the ers ⁇ te lead frame portion 110, the secondêtrahmenab ⁇ section 120 and the optoelectronic semiconductor chip 130 converts the material of the housing body 140th During the fo ⁇ lien-assisted transfer molding the top surface 131 of the optoelectronic semiconductor chip 130 by a cover film (release tape) covers and thereby ge ⁇ protects from contamination and a coverage by the material of the housing body 140th
  • the raised top portions 114 of the ERS ⁇ th lead frame portion 110 and the upper side portions 124 of the second lead frame portion 120 may be ⁇ covers during the film assisted transfer molding through the cover film.
  • first lead frame portion 110 and the second Lei ⁇ terrahmenabites 120 are formed by portions of an associated ⁇ , larger lead frame, they are preferably a plurality of first lead frame portions 110, a plurality of second Lead frame sections 120 and and correspondingly many arranged on the first lead frame sections 110 optoelectronic semiconductor chips 130 simultaneously embedded in a common housing body composite. Bund in this Genzomati Republic- the housing body 140 extending Be ⁇ ten lake connected along its extending between the top 141 and bottom 142 143 with additional housing bodies 140 contiguous. Only in a later processing step, the housing body composite and the lead frame embedded therein along the side surfaces 143 of the housing body 140 are divided to separate the housing body 140.
  • FIG. 4 shows a schematic perspective view of the housing body 140 in a processing state which follows the representation of FIG. The arranged on the Obersei ⁇ te 131 of the optoelectronic semiconductor chip 130 upper electrical contact area 133 of the optoelectronic semiconductor chip 130 by means of a bonding wire 135
  • the bonding wire 135 extending from the upper electrical contact surface 133 at the top 131 of the optoelectronic semiconductor chip 130 above the upper ⁇ page 141 of the housing body 140 for at the top 141 of the package body 140 exposed upper surface portion 124 of the top 121 of the second lead frame portion 120th
  • the first optoelectronic component 100 has been formed by further processing from the housing body 140 shown in FIG. 4.
  • the first opto-electronic device 100 may be playing, a light-emitting device (LED) device, a photodiode device or an IR transmitter or receiver at ⁇ .
  • LED light-emitting device
  • the cover layer 150 On the upper side 141 of the housing body 140, a cover layer 150 has been arranged.
  • the cover layer 150 has an upper side 151 and an upper side 151 opposite to each other. ing bottom 152 on.
  • the lower side 152 of the cover layer 150 is arranged on the upper side 141 of the housing body 140.
  • the covering layer 150 may be formed by, for example, a casting method, a compression molding, a lamination, or a spraying method.
  • the cover layer 150 covers the upper side 131 of the opto ⁇ electronic semiconductor chip 130 and thereby protects the optoelectronic semiconductor chip 130 from damage due to external influences.
  • the bonding wire 135 is embedded in the cover layer from ⁇ 150 and thus also protected from damage by external influences.
  • the cover layer 150 may, for example, a silicone engineerwei ⁇ sen.
  • the material of the covering layer 150 in ⁇ We sentlichen is transparent to light emitted, or by the optoelectronic semiconductor chip 130 absorbed electromagnetic radiation.
  • the cover layer 150 may be formed as a wavelength-converting layer, which is provided to a Wel lenanz ⁇ ren to konvertie- an emitted by the optoelectronic semiconductor chip 130 electromagnetic radiation.
  • 150 to be purchased ⁇ det the covering layer, light emitted by the optoelectronic semiconductor chip 130 to convert electromagnetic radiation having a wavelength from the blue or ultraviolet spectral range into white light.
  • the cover layer 150 may include one bedded wavelength-converting particles, which are adapted to absorb electromagnetic radiation having a first wavelength and emit electromagnetic then ⁇ magnetic radiation at a second, typically RESIZE ⁇ ßeren, wavelength.
  • the cover layer 150 was preferably still before dividing the housing ⁇ body composite arranged in the individual housing body 140 on the upper sides 141 of the housing body 140 of the contiguous housing body composite. Only then were the plurality of first optoelectronic components 100 produced in parallel in this way separated by dividing the housing body composite, the leadframe embedded therein, and the covering layer arranged thereon.
  • the first optoelectronic component 100 may be beispielswei ⁇ se provided as an SMD for surface mounting.
  • the free ⁇ lying at the bottom 142 of the housing body 140 portions of the bottom 112 of the first Porterrah- menabitess 110 and the bottom 122 of the second conductor ⁇ frame portion 120 form electrical contact surfaces of the first opto-electronic device 100.
  • the electrical contact surfaces of the first opto-electronic device 100 can, for example, be electrically contacted by reflow soldering (reflow soldering).
  • a method for producing a second optoelectronic component is explained below with reference to FIGS. 6 to 9.
  • the second optoelectronic component and the method for its production have great similarities with the first optoelectronic component 100 and with the method explained with reference to FIGS. 1 to 5 for its production.
  • the above description of the first opto electronic component 100 and the method for its production and the following description of the second optoelectronic component and the method for its production therefore apply accordingly for the respective other optoelectronic component and method, unless differences and deviations are expressly mentioned.
  • FIG. 6 shows a schematic perspective view of a first leadframe section 210 and a second
  • Lead frame section 220 which are provided for producing a second optoelectronic component.
  • the first conductor frame portion 210 and the second Porterrahmenab ⁇ section 220 may be formed by portions of a contiguous, larger lead frame.
  • the first conductor frame portion 210 and the secondêtrah ⁇ menabites 220 comprise an electrically conductive material, preferably a metal, such as copper.
  • the surfaces of the first leadframe section 210 and of the second leadframe section 220 may also be wholly or partially provided with a coating.
  • the first leadframe section 210 has an upper side 211 and a lower side 212 opposite the upper side 211.
  • a recess 213 is formed on the upper side 211 of the first leadframe portion 210.
  • the recess 213 is formed as an elongated channel ⁇ .
  • the recessed top portions 215 of the first lead frame portion 210 are bounded on both sides of the channel-shaped recess 213 by the raised top portions 214. Via connecting sections 216, the first
  • Lead frame portion 210 may be connected to other portions of a larger ⁇ ßeren, contiguous lead frame.
  • the second leadframe section 220 has an upper side 221 and an underside 222 opposite the upper side 221.
  • a recess 223 is formed, whereby the upper surface 221 of the second lead frame portion 220 un ⁇ is tert rushes into recessed top portions 225 and against the recessed top portions 225 raised top portions 224th
  • the recess 223 has an elongate channel ⁇ form, which is oriented substantially parallel and coaxial with the channel-shaped recess 213 of the first lead frame portion 210.
  • the raised top portions 224 of the second lead frame portion 220 defining the recessed top portions 225 along both sides of the channel-shaped recess 223 of the second lead frame portion 220 via connecting portions 226, the secondêtrahmenab ⁇ section 220 may be connected to further sections of a larger, coherent lead frame.
  • the recess 213 of the first lead frame portion 210 and the recess 223 of the second lead frame portion 220 may be applied by etching, for example.
  • the first conductor frame portion 210 and the second Porterrah ⁇ menabites 220 are arranged side by side laterally in a common plane.
  • the raised upper ⁇ side sections 214, 224, the recessed Obertouchabschnit ⁇ te 215, 225 and the lower sides 212, 222 of the first lead frame section 210 and the second lead frame section 220 are each approximately in common planes.
  • the first conductor frame portion 210 is formed in the exemplary illustration of FIG. 6 slightly larger than the second lead frame portion 220. However, it is also possible to both lead frame portions 210, form 220 having about the same size, or the second lead frame portion 220 RESIZE ⁇ SSER as the first Forming ladder frame section 210.
  • the first lead frame portion 210 of FIG. 6 may be formed from less than the ⁇ for the preparation of the first opto- Niche device 100 provided firstêtrahmenab ⁇ section 110 of FIG. 1.
  • Fig. 7 shows a schematic perspective view of the first lead frame portion 210 and the second conductor ⁇ frame portion 220 in one of the representation of FIG. 6 temporally subsequent processing status.
  • an opto ⁇ electronic semiconductor chip 230 On the upper sides 211, 221 of the leadframe sections 210, 220, an opto ⁇ electronic semiconductor chip 230 has been arranged.
  • the optoelectronic semiconductor chip 230 can be, for example, a light-emitting diode chip (LED chip) or a photodiode.
  • the optoelectronic semiconductor chip 230 is provided to emit electromagnetic radiation or to absorbie ⁇ ren.
  • the optoelectronic semiconductor chip 230 has an upper side
  • the upper side 231 forms a radiation passage flat of the optoelectronic semiconductor chip 230. Electromagnetic radiation emitted or absorbed by the optoelectronic semiconductor chip 230 passes through the upper side 231 of the optoelectronic semiconductor chip 230.
  • the optoelectronic semiconductor chip 230 is arranged in sections in the recess 213 of the first leadframe section 210 and the depression 223 of the second leadframe section 220.
  • the bottom 232 of the optoelectronic ⁇ rule semiconductor chip 230 is the recessed Oberfitabschnit ⁇ th 215, 225 of the tops 211, 221 of the Leiterrahmenab- sections 210, facing 220 and is connected via die bonding compounds having the recessed top portions 215, 225th
  • the upper side 231 of the optoelectronic semiconductor chip 230 preferably lies substantially in a common plane with the raised upper side sections 214, 224 of the upper sides 211, 221 of the leadframe sections 210, 220.
  • the optoelectronic semiconductor chip 230 has on its underside 232 a first lower electrical contact surface 233 and a second lower electrical contact surface 234.
  • the optoelectronic semiconductor chip 230 may be formed, for example, as a flip chip.
  • the first lower electrical Kon ⁇ clock area 233 is electrically connected via the chip bond between the underside 232 of the optoelectronic semiconductor chip 230 and the recessed upper surface portion 215 of the top 211 of the first lead frame portion 210 with the first lead frame portion 210th
  • the second lower electrical contact surface 234 of the optoelectronic semiconductor chip 230 is electrically conductively connected to the second leadframe section 220 via the die bond between the lower side 232 of the optoelectronic semiconductor chip 230 and the recessed upper side section 225 of the upper side 221 of the second leadframe section 220.
  • first lead frame portion 210 and the second Lei ⁇ terrahmenabites are formed 220 through portions of a contiguous, larger lead frame, so optoelectronic semiconductors chips 230 on each of the first and second Porterrahmenab be ⁇ cut 210 preferably in a common process step, arranged 220 of the lead frame.
  • FIG. 8 shows a schematic perspective view of the first leadframe section 210, of the second leadframe section 220 and of the optoelectronic semiconductor chip 230 in a processing state which follows in chronological order in FIG. 7.
  • the first conductor frame portion 210, the second lead frame portion 220 and the optoelectronic ⁇ specific semiconductor chip 230 have been embedded together in a housing body 240th
  • the housing body 240 comprises an electrically insulating material, preferably a plastic material, for example an epoxy resin.
  • the housing body 240 has been formed by a molding method in which the first lead frame portion 210, the second lead frame portion 220, and the first lead frame portion 210 are formed optoelectronic semiconductor chip 230 have been transformed by the material of the housing body 240.
  • the housing body 240 may have been formed by foil assisted transfer molding.
  • the housing body 240 has an upper side 241 and an upper side 241 opposite the upper side 241.
  • the erha ⁇ surrounded top portions 214 of the first Porterrahmenab ⁇ section 210, the raised top portions 224 of the second lead frame portion 220 and the top 231 of the optoelectronic semiconductor chip 230 are not covered by the material of the housing body 240 but are exposed on the upper surface 241 of the housing body 240th
  • the upper surface 231 of the opto-electronic semi- close the semiconductor chip 230, the raised top portions 214 of the first lead frame portion 210 and the raised Obersei ⁇ tenabexcellente 224 of the second lead frame portion 220 is approximately flush with the upper surface 241 of the housing body 240 from.
  • the housing body was formed by film-assisted spray ⁇ press 240
  • the upper surface 231 of the optoelectronic semiconductor chip 230, the raised top portions 214 of the first lead frame portion 210 and the raised top portions 224 of the second lead frame portion 220 during manufacture of the housing ⁇ body 240 may be prepared by a cover sheet (release tape) have been covered.
  • At the bottom 242 of the housing body 240 are at least parts of the bottom 212 of the first leadframe portion
  • first lead frame portion 210 and the second Lei ⁇ terrahmenabites are formed 220 through portions of a contiguous, larger lead frame, the whole lead frame in a common Genzouse stresses- is preferably embedded collar which each comprise a housing body 240 for each ⁇ of the pair of first lead frame portion 210 and a second lead frame portion 220 of the lead frame.
  • housing bodies 240 are integrally connected to each other along their side surfaces 243 extending between the upper side 241 and the underside 242 in the housing body assembly and are only separated from one another later in a later process step along these side surfaces 243, wherein the leadframe sections 210, 220 of the leadframe also their connection sections 216, 226 are separated.
  • FIG. 9 shows a schematic perspective view of a second optoelectronic component 200.
  • the second optoelectronic component 200 may be, for example, a light-emitting diode component (LED component), a photodiode component or an IR transmitter or receiver.
  • the second opto-electronic device 200 is formed by further Bear ⁇ processing from the shown in Fig. 8 housing sink 240.
  • a covering layer 250 On the upper side 241 of the housing body 240, a covering layer 250 has been arranged.
  • the cover layer 250 has a top surface 251 and one of the top 251 waivelie ⁇ constricting bottom 252.
  • the bottom 252 of the cover ⁇ layer 250 is in contact with the upper surface 241 of the housing body 240th
  • the cover layer 250 may be applied by, for example, a casting method. If the housing body 240 formed as part of a multiple housing ⁇ body 240 comprising housing body composite wor ⁇ is, the capping layer has been 240 preferably before the cutting of the casing body composite on the top surfaces 241 of the related housing body 240 is applied.
  • the cover layer 250 covers the upper side 231 of the opto ⁇ electronic semiconductor chip 230 and can serve a protection of the optoelectronic semiconductor chip 230 from damage by external influences.
  • the cover layer 250 is preferably substantially transpa rent ⁇ for electromagnetic radiation emitted or by the optoelectronic semiconductor chip 230 absorbed radiation.
  • the cover layer 250 may comprise, for example, a silicone.
  • the cover layer 250 may be formed as a wavelength-converting layer. Then, the covering ⁇ layer 250 may serve to convert a light emitted by the optoelectronic semiconductor chip 230 electromagnetic radiation into electromagnetic radiation of a different wavelength.
  • the cover layer 250 may comprise embedded wavelength-converting particles, which are formed from ⁇ to absorb electromagnetic radiation of a first Wel ⁇ lenate and then emit electromagnetic radiation of a second, typically larger wavelength.
  • the cover layer 250 can be completely eliminated.
  • a method for producing a third optoelectronic component 300 will be explained below with reference to FIG.
  • the third optoelectronic component 300 and the method for its production have great similarities with the second optoelectronic component 200 and with the method explained with reference to FIGS. 6 to 9 for its production. Therefore, the above description of the second optoelectronic component 200 and the process are to be ⁇ ner production and the following description of drit ⁇ th optoelectronic component 300 and the method for its production accordingly for the other opto-electronic device 200, 300 and United go ⁇ , unless differences and deviations are expressly mentioned. 10 shows the third optoelectronic component 300 in an unfinished state of processing.
  • the third opto-electronic device 300 includes a first lead frame portion 310, the substantially-section as the first Porterrahmenab ⁇ 210 is formed of the second optoelectronic component 200th
  • the first conductor frame portion 310 has an upper surface 311 and the top 311 disciplinelie ⁇ constricting bottom 312.
  • On the upper side 311 of the first lead frame portion 310 is a recess 313 easilybil ⁇ det, whereby the upper surface 311 is recessed in raised Oberoresab ⁇ sections 314 and opposite raised Oberpatiabschnit ⁇ 314 th top portions 315 divided.
  • the first leadframe section 310 may be connected to further sections of a larger, continuous leadframe.
  • Is formed further includes the third opto-electronic device 300 ei ⁇ NEN second lead frame portion 320, the surfaces in the essential as the second lead frame portion 220 of the second optoelectronic component 200th
  • the two ⁇ te lead frame portion 320 has an upper surface 321 and the top 321 ei ⁇ ne opposite bottom 322nd
  • a recess 323 on the upper side 321 of the second lead frame section 320 divides the upper side 321 of the second lead frame section 320 into raised upper side sections 324 and recessed upper side sections 325.
  • the secondêtrahmenab ⁇ section 320 may be connected to other sections of a larger ladder frame.
  • a first optoelectronic semiconductor chip 340 is disposed on the recessed upper side portions 315, 325 of the first lead frame section 310 and the second Porterrahmenab ⁇ section 320.
  • the first optoelectronic semiconductor chip 340 has a top surface 341 and one of the top 341 ge ⁇ genüberelle bottom 342.
  • the upper side 341 forms a radiation passage area of the optoelectronic half conductor chips 340. Electromagnetic radiation emitted or absorbed by the optoelectronic semiconductor chip 340 passes through the top surface 341 of the optoelectronic semiconductor chip 340.
  • the first optoelectronic semiconductor chip 340 has a first electrical contact surface 343 and a second electrical contact surface 344 to be ⁇ ner bottom 342nd
  • the first optoelectronic semiconductor chip 340 may be formed, for example, as a flip chip.
  • the first electricalticianflä ⁇ surface 343 is electrically connected to the firstêtrahmenab ⁇ section 310.
  • the second electrical contact surface 344 of the first optoelectronic semiconductor chip 340 is electrically conductively connected to the second conductor frame section 320.
  • the third optoelectronic component 300 additionally has a third leadframe section 330.
  • the third Lei ⁇ terrahmenabites 330 is substantially like the first leadframe portion 310 and the second lead frame portion
  • the thirdnatide 320 has a top surface 331 and one of the upper ⁇ side 331 opposite bottom 332. Through an opening formed on the upper surface 331 recess 333, the upper ⁇ page 331 of the third lead frame portion 330 in raised top portions 334 and recessed top portions 335 is divided. By connecting portions 336 of the drit ⁇ te lead frame portion 330 may be connected to further sections of a larger lead frame.
  • the third opto-electronic device 300 further comprises a second optoelectronic semiconductor chip 350.
  • the second optoelectronic semiconductor chip 350 may be formed as the ers ⁇ te optoelectronic semiconductor chip 340th
  • the second optoelectronic semiconductor chip 350 has an upper _,
  • a first electrical con ⁇ tact surface 353 and a second electrical contact surface 354 are formed on the underside 352 of the second optoelectronic ⁇ African semiconductor chip 350.
  • the second optoelectronic semiconductor chip 350 is arranged in sections from the recess 323 of the second leadframe section 320 and the depression 333 of the third leadframe section 330.
  • the first electrical contact ⁇ surface 353 of the second optoelectronic semiconductor chip 350 is electrically connected to the second lead frame portion 320th
  • the second electrical contact surface 354 of the second optoelectronic semiconductor chip 350 is electrically conductively connected to the third conductor frame section 330.
  • the first optoelectronic semiconductor chip 340 and the second optoelectronic semiconductor chip 350 of the third opto-electro ⁇ African device 300 can be controlled in the operation of the third opto ⁇ electronic device 300 independently.
  • the second lead frame portion 320 forms a common terminal of the two opto-electronic semiconductor chips 340, 350, while the first Porterrahmenab ⁇ section 310 and the third lead frame section form 330 getrenn ⁇ te terminals of the first optoelectronic semiconductor chip 340 and the second optoelectronic semiconductor chips 350th
  • first optoelectronic semiconductor chip 340 and the second optoelectronic semiconductor chip 350 such as the optoelectronic semiconductor chip 130 of the first optoelectronic component 100, each having an upper electrical contact area and a lower electrical contact area.
  • the first optoelectronic semiconductor chip 340 would be completely in the
  • the further method for producing the third optoelectronic component 300 is analogous to the method explained with reference to FIGS. 1 to 9 for producing the first optoelectronic component 100 and the second optoelectronic component 200.
  • a cover layer can be arranged on an upper side of the housing body.
  • the cover layer may be formed as a wavelength-converting layer.
  • a fourth optoelectronic component 400 and a method for its production are explained below with reference to FIGS. 11 and 12.
  • the fourth optoelectronic Bauele ⁇ element 400 and the process for its preparation have large similarities with the second opto-electronic device 200 and explained with reference to Figures 6 to 9.
  • a method for the production thereof The description of the second optoelectronic component 200 and the method for its production as well as the following description of the fourth optoelectronic component 400 and the method for its production therefore also apply correspondingly to the respective other optoelectronic component 200, 400 and method, if not differences and deviations are mentioned expressly ⁇ Lich.
  • the fourth optoelectronic device 400 includes a ⁇ ers th lead frame portion 410 and a second lead frame portion 420th
  • the first leadframe section 410 of the fourth optoelectronic component 400 is formed essentially like the first leadframe section 210 of the second optoelectronic component 200 and has an upper side 411 with raised upper side sections 414.
  • the second lead frame portion 420 of the fourth electro-opto ⁇ African device 400 is formed substantially like the second lead frame portion 220 of the second optoelectronic ⁇ construction elements 200 and has a top surface 421 having he ⁇ Exalted top portions 424.
  • the depressions formed on the upper sides 411, 421 of the leadframe sections 410, 420 of the fourth optoelectronic component 400 are not visible in FIGS. 11 and 12.
  • the fourth optoelectronic component 400 also has an optoelectronic semiconductor chip 430 with an upper side 431.
  • the optoelectronic semiconductor chip 430 of the fourth optoelectronic component 400 is formed in the Wesentli ⁇ chen as the optoelectronic semiconductor chip 230 of the second optoelectronic component 200th
  • the opto ⁇ electronic semiconductor chip 430 is arranged in the region of the depressions of the first lead frame portion 410 and the second lead frame portion 420 that electrical ⁇ specific contact areas of the optoelectronic semiconductor chip 430 are electrically conductively connected to the first lead frame portion 410 and the second lead frame portion 420th
  • the optoelectronic semiconductor chip 430 of the fourth optoelectronic component 400 such as the optoelectronic semiconductor chip 130 of the first optoelectronic component 100.
  • the first conductor frame portion 410, the second lead frame ⁇ portion 420 and the optoelectronic semiconductor chip 430 of the fourth optoelectronic component 400 are embedded in a housing body 440th
  • the housing body 440 of the fourth opto-electronic component 400 may, as prepared, the housing body 140 of the first opto-electronic component 100 through a molding process (molding process) ⁇ the, in particular by sheet-assisted transfer molding (foil assisted transfer molding).
  • the housing body 440 has a top surface 441, a top 441 of the opposite bottom side 442 and is perpendicular ⁇ right between the top 441 and bottom 442 extending side surfaces 443 on. At least parts of the lower sides of the first lead frame portion 410 and the second Porterrahmenab ⁇ section 420 are exposed at the bottom 442 of the GeHousekör- pers 440th
  • the housing body 440 of the fourth optoelectronic component 400 has a cavity 444 on its upper side 441.
  • the cavity extends as a depression on the upper side 441 into the housing body 440. Laterally, the cavity 444 will be adjacent ⁇ of a plane formed by the material of the housing body 440 wall 446th
  • the Obersei ⁇ te 431 of the optoelectronic semiconductor chip 430 of the fourth optoelectronic component 400 is exposed.
  • Parts of the erha ⁇ surrounded top portions 414, 424 of the first lead frame portion 410 and the second lead frame portion 420 of the fourth optoelectronic device 400 are on the base 445 of the cavity 444 of the housing body free 440th
  • the wall 446 of the cavity 444 of the housing body 440 of the fourth optoelectronic device 400 can serve as a reflector for light emitted by the optoelectronic semiconductor chip 430 of the fourth optoelectronic device 400 electromag netic radiation ⁇ . This allows the cavity 444 of the fourth optoelectronic component 400 a Lichtauskopp ⁇ ment from the fourth optoelectronic device 400 improve. In addition, the cavity 444 can thus cause bundling and beam shaping of the electromagnetic radiation emitted by the optoelectronic semiconductor chip 430 of the fourth optoelectronic component 400.
  • FIG. 12 shows a schematic perspective illustration of the fourth optoelectronic component 400 in a processing state which follows the representation of FIG. 11 over time.
  • a potting 450 has been arranged in the cavity 444 on the upper side 441 of the housing ⁇ body 440 of the fourth optoelectronic device 400.
  • the potting 450 may also be referred to as a cover layer.
  • the potting 450 may have the same material as the cover layer 150 of the first optoelectronic component 100.
  • the potting 450 may also be formed as a wavelength-converting layer.
  • the casting 450 may have been introduced, for example by dosing needle into the cavity 444 of the housing body 440 of the fourth optoelekt ⁇ tronic device 400th
  • a top surface 451 closes off the casting 450 is substantially flush with the upper surface 441 of the housing body 440 of the four ⁇ th optoelectronic component 400th

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant optoélectronique qui comprend une première partie de grille de connexion comportant un côté supérieur, une seconde partie de grille de connexion comportant un côté supérieur et une puce semi-conductrice optoélectronique. Les parties de grille de connexion et la puce semi-conductrice optoélectronique sont noyés conjointement dans un corps de boîtier comportant un côté supérieur.
PCT/EP2015/054710 2014-03-07 2015-03-06 Composant optoélectronique et procédé de fabrication de celui-ci WO2015132380A1 (fr)

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DE102014103034.6 2014-03-07
DE102014103034.6A DE102014103034A1 (de) 2014-03-07 2014-03-07 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung

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DE102014116133B4 (de) 2014-11-05 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements und Verfahren zum Herstellen einer optoelektronischen Anordnung
DE102015122641A1 (de) * 2015-12-22 2017-06-22 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
EP3451396B1 (fr) * 2017-09-05 2024-07-17 Suzhou Lekin Semiconductor Co., Ltd. Conditionnement de dispositif à semiconducteur
KR102641336B1 (ko) 2017-09-05 2024-02-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
DE102019220215A1 (de) * 2019-12-19 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement

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EP2477242A2 (fr) * 2011-01-17 2012-07-18 Samsung LED Co., Ltd. Conditionnement de dispositif électroluminescent et son procédé de fabrication
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DE102009036621B4 (de) * 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
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JP2002335020A (ja) * 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 発光装置
US20050151149A1 (en) * 2004-01-08 2005-07-14 Chia Chee W. Light emission device
WO2009072757A2 (fr) * 2007-12-03 2009-06-11 Seoul Semiconductor Co., Ltd. Boîtier del mince
EP2477242A2 (fr) * 2011-01-17 2012-07-18 Samsung LED Co., Ltd. Conditionnement de dispositif électroluminescent et son procédé de fabrication
EP2479810A2 (fr) * 2011-01-20 2012-07-25 Samsung LED Co., Ltd. Boîtier de dispositif électroluminescent et son procédé de fabrication
US20130256721A1 (en) * 2012-04-01 2013-10-03 Shenzhen China Star Optoelectronics Technology Co. Ltd. LED Light with Electrostatic Protection and Backlight Module Using the LED Light

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