WO2016095600A1 - Détecteur de température en trois dimensions et son procédé de fabrication - Google Patents

Détecteur de température en trois dimensions et son procédé de fabrication Download PDF

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WO2016095600A1
WO2016095600A1 PCT/CN2015/091662 CN2015091662W WO2016095600A1 WO 2016095600 A1 WO2016095600 A1 WO 2016095600A1 CN 2015091662 W CN2015091662 W CN 2015091662W WO 2016095600 A1 WO2016095600 A1 WO 2016095600A1
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layer
thermopile
recess
dielectric layer
material structure
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PCT/CN2015/091662
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English (en)
Chinese (zh)
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费跃
王旭洪
张颖
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上海新微技术研发中心有限公司
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Publication of WO2016095600A1 publication Critical patent/WO2016095600A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

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  • the present application relates to the field of semiconductor technology, and in particular, to a stereoscopic temperature detector and a method of fabricating the same.
  • thermopile temperature sensor is widely studied because of its simple manufacturing process, low cost, convenient use and no 1/f noise.
  • thermopile temperature sensor The main working principle of the thermopile temperature sensor is the Seebeck effect.
  • thermopile temperature sensor has three types of closed membranes, cantilever beams and suspension structures according to its design. Among them, the cantilever beam and suspension structure process is difficult, and the yield is not high in large-scale production. Therefore, the prior art adopts a closed membrane structure for design and production.
  • thermopile temperature sensor needs to pass through the double as shown in FIG.
  • the back side of the surface process etches the silicon material 1 to form the recesses 6 or forms the cavity 8 by front opening wet etching or dry etching as shown in FIG.
  • Thermal short circuit on bottom 4 or 6a keeping the same temperature as ambient.
  • the inventors of the present application have found that, for the structure of FIG. 1, the double-sided process lithography alignment accuracy is not high, and the actual manufacturing process is easy to be biased, resulting in device failure or performance degradation; for the structure of FIG. 2, the front etch technology is Wet etching (such as KOH, TMAH etching, etc.) or dry etching (such as XeF 2 ) is difficult to accurately control the etching depth and width, thus affecting device performance.
  • Wet etching such as KOH, TMAH etching, etc.
  • dry etching such as XeF 2
  • the size of the sensor is limited in consideration of the device size and the yield of the sensor on the unit wafer, the size of the planar film is also limited, so the thermal conductivity between the hot junction and the cold junction is increased, the heat junction and The temperature difference of the cold junction is not large enough, and the sensitivity of the sensor to detect the temperature is not high.
  • the present application proposes a three-dimensional temperature detector and a manufacturing method thereof, and a cavity structure is formed by microfabrication sacrificial layer technology, and a hot junction and a cold junction are respectively disposed on the outer side of the top and bottom of the cavity structure, thereby Applied stereoscopic temperature detector and flat in the prior art
  • the length of the thermopile thermocouple pair and the thermopile insulation film can be increased, the thermal conductivity is lowered, and the temperature difference between the hot junction and the cold junction is increased, and the temperature is increased.
  • a method for manufacturing a stereoscopic temperature detector comprising:
  • thermopile material structure (12) Forming a first layer of thermopile material structure (12) on an upper surface and a sidewall of the sacrificial layer structure (11), the first layer of thermopile material structure (12) having an upper surface of the sacrificial layer structure a portion of the exposed first recess (13), and the first layer of thermopile material structure (12) further has a first extension (12b), the first extension (12b) covering the sacrificial layer structure (11) a portion of the first dielectric layer (10) on the outside of the bottom;
  • the second dielectric layer structure (14) Forming a second dielectric layer structure (14) to cover the surface of the first layer of thermopile material structure (12) and the exposed surface of the first dielectric layer (10), the second dielectric layer structure (14) having a second groove (14b), a third groove (15) and a fourth groove (16), wherein the second groove (14b) exposes the first groove (13), the third a recess (15) exposing a portion of the first extension (12b), the fourth recess (16) aligning the first layer of thermopile material structure outside the first recess (13) a part of (12) is exposed;
  • the second layer thermopile material structure (17) is connected to the first layer thermopile material structure (12) through the fourth groove (16), the second layer thermopile material structure (17) having a fifth groove (17b) and a second extension (17c), wherein the fifth groove (17b) exposes the first groove (13), the second extension ( 17c) a surface of the second dielectric layer structure (14) covering a portion of the first dielectric layer (10);
  • an infrared absorbing layer structure (20) filling the sixth recess (18b), the infrared absorbing layer structure (20) having an eighth recess exposing a portion of an upper surface of the sacrificial layer structure (11) (twenty one);
  • the sacrificial layer structure is removed via the eighth recess (21) to form a cavity (22).
  • the first layer of thermopile material structure (12) has adjacent at least two
  • the second layer of thermopile material structure (17) has adjacent at least two
  • the structure (17) is coupled to the adjacent first layer of thermopile material structures (12) via the third recess (15) to form a series of thermocouple pairs.
  • the material of the infrared absorbing layer is titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), gold black (black black), silicon black (silica black) and dielectric layer composite film. One or more of them.
  • the first layer thermopile material structure and the second layer thermopile material structure are doped polysilicon, bismuth (Sb) and its compound, bismuth (Bi) and its compound, titanium (Ti) and its compound, bismuth, respectively.
  • Sb bismuth
  • Bi bismuth
  • Ti titanium
  • Ti titanium
  • thermopile material structure and the second layer of thermopile material structure have different Seebeck coefficients.
  • the ratio of the lateral area of the eighth groove (21) to the lateral area of the infrared absorbing layer structure (20) is 1:10000-1:1000000.
  • the sacrificial layer structure (11) has a thickness of 0.1 um to 100 um.
  • the lateral area of the sixth groove (18b) is smaller than the lateral area of the first groove (13).
  • a stereoscopic temperature detector including:
  • the top of the cavity has a sixth recess (18b) and an infrared absorbing layer structure (20) filling the sixth recess (18b), the infrared absorbing layer structure (20) having the cavity (22)
  • the second dielectric layer structure (14) has a third recess (15) and a fourth recess (16), the fourth recess (16) being located at the top of the cavity (22) and located at the The outer side of the sixth recess (18b), the third recess (15) is located outside the bottom of the cavity (22), and the second layer of thermopile material structure (17) passes through the A four groove (16) is coupled to the first layer of thermopile material structure (12).
  • the utility model has the beneficial effects that the cavity structure is formed by the micro-machining sacrificial layer technology, and the hot junction and the cold junction are respectively disposed on the outer side of the top and bottom of the cavity structure, thereby increasing the temperature difference between the hot junction and the cold junction. Improve the sensitivity of the temperature detector and improve device performance and process stability.
  • thermopile temperature sensor manufactured by a double-sided process
  • thermopile temperature sensor manufactured by a front etching process
  • FIG. 3 is a schematic top plan view of a three-dimensional temperature detector according to an embodiment of the present application.
  • FIG. 4 is a schematic longitudinal sectional structural view of a three-dimensional temperature detector according to an embodiment of the present application.
  • FIG. 5 is a schematic side view showing the structure of a three-dimensional temperature detector according to an embodiment of the present application.
  • FIG. 6 is a schematic flow chart of a method for manufacturing a stereoscopic temperature detector according to an embodiment of the present application
  • FIG. 7A-7O are schematic structural views of devices corresponding to each step of the method for manufacturing a three-dimensional temperature detector according to an embodiment of the present application.
  • the surface on which the respective dielectric layers of the substrate are disposed is referred to as "upper surface”, and the surface of the substrate opposite to the “upper surface” is referred to as “lower surface”, whereby “ The “up” direction refers to the direction from the “lower surface” to the “upper surface”, the “lower” direction is opposite to the “upper” direction, and the “upper” direction and the “down” direction are collectively referred to as “longitudinal”.
  • the direction in which the "upper surface” of the semiconductor is parallel is referred to as "lateral”.
  • the "upper” and “lower” settings are relative, but for convenience of explanation, and do not represent the orientation when the stereoscopic temperature detector is specifically used or manufactured.
  • Embodiment 1 of the present application provides a method of manufacturing a stereoscopic temperature detector.
  • 6 is a schematic flow chart of the manufacturing method of the three-dimensional temperature detector
  • FIG. 7 is a schematic longitudinal cross-sectional view of the device structure corresponding to each step of the manufacturing method of the three-dimensional temperature detector.
  • a method of manufacturing the three-dimensional temperature probe of the present embodiment will be described with reference to Figs. 6 and 7.
  • Step S601 depositing a first dielectric layer 10 on the substrate 9, as shown in Fig. 7A.
  • the substrate may be a wafer commonly used in the semiconductor manufacturing field, such as a silicon wafer, a silicon-on-insulator (SOI) wafer, a silicon wafer, a germanium wafer, or Gallium Nitride (GaN) wafers and the like are not limited in this embodiment.
  • a silicon wafer a silicon-on-insulator (SOI) wafer
  • SOI silicon-on-insulator
  • GaN Gallium Nitride
  • a thin film deposition method commonly used in a semiconductor manufacturing process can be employed.
  • the first dielectric layer 10 is deposited on the substrate 9, and the first dielectric layer 10 is used to electrically insulate the substrate 9 from the thermopile structure.
  • Step S602 forming a sacrificial layer structure 11 on the first dielectric layer 10.
  • step S602 may include the following steps:
  • a sacrificial layer 11a is formed by spin coating on the surface of the first dielectric layer 10 and curing at a high temperature, as shown in Fig. 7B.
  • the sacrificial layer pattern is formed by reticle lithography, and the pattern is etched to form a sacrificial layer structure 11 for forming a cavity of a stereoscopic temperature detector to be described later, as shown in Fig. 7C.
  • the lateral width of the sacrificial layer structure 11 is similar to that of the thermopile recess formed by the conventional process, and determines the lateral width of the cavity; the thickness of the sacrificial layer structure 11 determines the sensitivity gain of the thermopile structure, that is, The thicker the thickness, the larger the gain, whereby the sensitivity of the temperature detector can be improved by modulating the thickness of the sacrificial layer structure 11.
  • the thickness of the sacrificial layer structure 11 may be 0.1 um - 100 um, and more specifically, may be, for example, 50 um.
  • Step S603 forming a first layer of thermopile material structure 12.
  • step S603 may include the following steps:
  • thermopile material 12a 1) Depositing a first layer of thermopile material 12a.
  • thermopile material 12a Depositing a layer of thermopile material 12a over the formed sacrificial layer structure 11 to cover the entire sacrificial layer structure, as shown in FIG. 7D; and, the first layer of thermopile material 12a may have a larger Seebeck coefficient To increase the overall sensitivity of the temperature detector.
  • thermopile material structure 12 Forming a first layer of thermopile material structure 12.
  • thermopile material pattern is formed by reticle lithography, and the pattern is etched to form a first layer of thermopile material structure 12.
  • the first layer of thermopile material structure 12 is formed on an upper surface and a sidewall of the sacrificial layer structure 11, and the first layer of thermopile material structure 12 has a structure of the sacrificial layer a portion of the upper surface of the first recess 13 is exposed, and the first layer of thermopile material structure 12 further has a first extension 12b covering a portion of the bottom of the bottom of the sacrificial layer structure 11.
  • the first groove 13 may be located at a center of the top of the sacrificial layer structure 11, thereby simplifying the process.
  • Step S604 Forming a second dielectric layer structure 14.
  • step S604 can include the following steps:
  • a second dielectric layer 14a is deposited to cover the first layer of thermopile material structure 12 and fill the first recess 13 as shown in Figure 7F.
  • the second dielectric layer 14a is used for electrical insulation of the first layer of thermopile material structure 12 and the second layer of thermopile material structure described later.
  • a second dielectric layer pattern is formed by reticle lithography, and the pattern is etched to form a second dielectric layer structure 14.
  • the second dielectric layer structure 14 covers the first a surface of the layer thermopile material structure 12 and the exposed surface of the first dielectric layer 10, the second dielectric layer structure 14 having a second recess 14b, a third recess 15 and a fourth recess 16, wherein The second groove 14b exposes the first groove 13, the third groove 15 exposes a portion of the first extension portion 12b, and the fourth groove 16 is located at the first groove 13 A portion of the outer first layer of thermopile material structure 12 is exposed; and, in a particular embodiment, the fourth groove 16 can be located at the edge of the top center of the sacrificial layer structure 11.
  • the third recess 15 and the fourth recess 16 respectively become hot junction recesses and cold junction recesses for the electrical connection of the first layer of thermopile material and the second layer of thermopile material in series.
  • Step S605 Forming a second layer of thermopile material structure 17.
  • step S605 can include the following steps:
  • thermopile material 17a 1) Depositing a second layer of thermopile material 17a.
  • thermopile material 17a is deposited to cover the second recess 14a-fourth recess 16 as shown in Fig. 7H.
  • thermopile material structure 17 Forming a second layer of thermopile material structure 17.
  • a second layer of thermopile material structure pattern is formed by reticle lithography, and the pattern is etched to form a second layer of thermopile material structure 17.
  • the second layer of thermopile material structure 17 covers the second dielectric layer structure 14, and the second layer of thermopile material structure 17 passes through the fourth recess 16 and the first layer of thermoelectricity.
  • the stack of material structures 12 are joined, and the second layer of thermopile material structure 17 has a fifth recess 17b and a second extension 17c, wherein the fifth recess 17b exposes the first recess 13
  • the second extension portion 17c is located on a portion of the second dielectric layer structure 14 covering the first dielectric layer 10. surface.
  • the second layer thermopile material structure 17 and the first layer thermopile material structure 12 together form a thermocouple pair of the thermopile, and a thermal junction to be described later can be formed at the fourth groove 16.
  • a cold junction can be formed at the other end of the pair of thermocouples.
  • the pair of thermocouples may be an open circuit, whereby a pair of thermocouple materials of a second layer of thermopile material structure 17 and a first layer of thermopile material structure 12 may be used.
  • first layer thermopile material structure (12) may be adjacent at least two
  • second layer thermopile material structure (17) may also be adjacent at least two
  • the second layer of thermopile material structure (17) is connected to the adjacent first layer of thermopile material structure (12) via the third groove (15) to form a series of thermocouple pairs, with respect to the series
  • FIG. 7L For the connection form of the thermocouple pair, reference can be made to FIG. 7L which will be described later.
  • the second layer of thermopile material 17 can also be used to fabricate the electrodes of the thermopile for subsequent packaging of leads and testing.
  • Step S606 Forming a third dielectric layer structure 18.
  • step S606 may include the following steps:
  • a third dielectric layer 18a is deposited to cover the entire thermopile device structure, as shown in Figure 7J.
  • a third dielectric layer structure pattern is formed by reticle lithography, and the pattern is etched to form a third dielectric layer structure 18.
  • the third dielectric layer structure 18 covers the second layer thermopile structure 17, and the third dielectric layer structure 18 has a sixth recess 18b exposing the first recess 13 And making a part of the second extension 17c The seventh recess 19 of the dew.
  • FIG. 7L is a plan view corresponding to FIG. 7K
  • FIG. 7K is a cross-sectional view of FIG. 7L along the BB direction.
  • the second layer thermopile structure 17 is divided into a heat junction portion 17d and a strip-like conduction.
  • thermocouples and the second dielectric layer structure 14 and the third dielectric layer structure 18 are distributed over the sidewalls and the upper surface of the sacrificial layer structure 11 to form a three-dimensional support film.
  • 23 shows a portion of the thermocouple pair at the top of the sacrificial layer structure 11
  • 24 shows a portion of the thermocouple pair on the side wall and the bottom outer side of the sacrificial layer structure 11.
  • the third dielectric layer structure 18 can be used for the passivation layer and the protective layer of the temperature detector; and the seventh recess 19 can serve as an electrode exposure recess of the temperature detector for Subsequent package leads and tests.
  • the lateral area of the sixth groove 18b is smaller than the lateral area of the first groove 13, so that a part of the first groove 13 is exposed,
  • the third dielectric layer structure 18 covers the sidewall of the sixth recess 18b to passivate and protect the sidewall of the sixth recess 18b.
  • Step S607 Forming the infrared absorbing layer structure 20.
  • step S607 may include the following steps:
  • the infrared absorbing layer 20a is deposited.
  • a layer of infrared absorbing layer 20a is deposited to cover the entire structure, as shown in Fig. 7M.
  • An infrared absorbing layer structure pattern is formed by reticle lithography, and the pattern is etched to form an infrared absorbing layer structure 20.
  • the infrared absorbing layer covering the seventh groove 19 is removed to expose a portion of the second extending portion 17c; the formed infrared absorbing layer structure 20 fills the sixth groove 18b for absorption.
  • Infrared radiation; and the infrared absorbing layer structure 20 has an eighth recess 21 exposing a portion of the upper surface of the sacrificial layer structure 11 for releasing the sacrificial layer structure 11, for example, the eighth recess 21 A center of the infrared absorbing layer structure 20 may be formed.
  • the ratio of the lateral area of the eighth recess 21 to the lateral area of the infrared absorbing layer structure 20 is very small, so the absorption of the infrared radiation of the temperature detector is not affected.
  • the ratio may be 1:10000-1:1000000, more specifically, for example, it may be 1:160000.
  • the infrared absorbing layer structure 20 can not only fill the sixth recess 18b, but also cover a portion of the upper surface of the third dielectric layer structure 18, for example, as shown in FIG. 7N.
  • the infrared absorbing layer structure 20 can also cover a portion of the third dielectric layer structure 18 corresponding to the fourth recess 16 , that is, a position corresponding to the thermal junction of the thermocouple pair, whereby the infrared absorbing layer structure 20 absorbs The heat can be quickly conducted to the hot junction, increasing the response speed of the stereoscopic temperature detector.
  • Step S608 removing the sacrificial layer structure 11 via the eighth recess 21 to form a cavity 22, as shown in FIG. 7O.
  • the material of the sacrificial layer structure 11 may be a semiconductor fabrication worker.
  • a sacrificial layer material commonly used in the art such as one or more of materials such as polyimide, amorphous silicon, polycrystalline silicon, silicon oxide, and photoresist.
  • the method for removing the sacrificial layer used in the step S608 is different, and the specific method may refer to the prior art, and details are not described in this embodiment.
  • the material of the infrared absorbing layer may be titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), gold black (black black), silicon black (Silicon black). And one or more of the dielectric layer composite film and the like.
  • the first layer thermopile material structure and the second layer thermopile material structure may be doped polysilicon, bismuth (Sb) and its compound, bismuth (Bi) and its compound, and titanium (Ti, respectively). And a compound thereof, one of tantalum (Ta) and a compound thereof, aluminum (Al), and gold (Au); and the first layer of thermopile material structure and the second layer of thermopile material structure There are different Seebeck coefficients, whereby both can form a thermocouple pair for temperature detection.
  • the manufacturing method of the present application compared with the conventional double-sided etching of the back surface groove, the manufacturing method of the present application produces a cavity by sacrificial layer spin coating, curing, photolithography etching, release, etc., and the alignment precision is far. It is higher than the double-sided process; compared with the conventional front etching technology, the manufacturing method of the present application can precisely control the etching width through the photoresist mask, and there is no over-etching phenomenon; therefore, the process of the manufacturing method of the present application High stability and guaranteed device performance.
  • the sacrificial layer structure 11 is made of polyimide (PI), the first dielectric layer 10 and the first
  • the three dielectric layer structure 18 is made of silicon nitride (Si 3 N 4 ), the second dielectric layer structure 14 is made of silicon oxide (SiO 2 ), the infrared absorption layer structure 20 is made of gold black, and the first layer of thermopile material structure is used.
  • 12 is made of boron-doped polysilicon (PolySi: B), the second layer of thermopile material structure 17 is made of aluminum (Al), and the substrate 9 may be a silicon wafer.
  • a silicon nitride film is deposited on the silicon wafer 9 by LPCVD or PECVD as the first dielectric layer 10 of the temperature detector.
  • thermopile material 12a depositing a polysilicon film by LPCVD or PECVD on the basis of the formed sacrificial layer structure 11, and doping a certain concentration of boron to form a boron-doped polysilicon film, that is, the first layer of thermopile material 12a, It covers the entire sacrificial layer structure 11.
  • the photoresist pattern on the first layer of thermopile material 12a is photolithographically patterned by reticle, and the pattern is etched by RIE or IBE to form a first layer of thermopile material structure 12.
  • the structure exposes a groove pattern on the upper surface of the sacrificial layer structure 11 as the first groove 13.
  • a silicon oxide film 14a by LPCVD or PECVD to cover the boron doped polysilicon film structure 12 and fill the exposed first recess 13.
  • the photoresist pattern on the silicon oxide film 14a is photolithographically coated by a reticle, and the pattern is etched by RIE or IBE to form a second dielectric layer structure 14.
  • the structure In addition to exposing the first recess 13, the structure also forms a recess 15 and a recess 16 at its junction with the first layer of thermopile material.
  • thermopile material structure 17a depositing a layer of aluminum film 17a by evaporation or sputtering to cover the above Three grooves 13, 15, 16.
  • the photoresist pattern on the aluminum thin film is photolithographically coated by a reticle, and the pattern is etched by RIE or IBE or wet etching to form a first layer of thermopile material structure 17, which is combined with a boron doped polysilicon film. 12 together form a pair of thermocouples and continue to expose the first recess 13.
  • a silicon nitride film 18a is deposited by LPCVD or PECVD to cover the entire thermopile device structure.
  • the dielectric layer 18a is used for the passivation layer and the protective layer of the temperature detector.
  • the photoresist pattern on the silicon nitride film 18a is photolithographically coated by a reticle, and the pattern is etched by RIE or IBE to form a third dielectric layer structure 18. The structure continues to expose the first recess 13 at the top. The groove 19 is exposed at the bottom.
  • a gold film 20a is deposited by evaporation under a low pressure atmosphere of nitrogen, for example, 100-300 Pa.
  • the gold film is deposited in a nitrogen atmosphere and is black under macroscopic conditions for absorbing infrared radiation.
  • the gold black film 20 covers the groove 13 and the groove 19.
  • the photoresist pattern on the gold black film 20a is photolithographically coated by a reticle, and the pattern is etched by wet or RIE or IBE to expose the electrode, and an infrared absorbing layer 20 is formed on top of the sacrificial layer 11. . Further, a minute groove 21 is formed in the center of the infrared absorbing layer for the release of the sacrificial layer structure 11.
  • the sacrificial layer structure 11 is released by radio frequency or microwave extraction by oxygen plasma ashing to form the cavity 22.
  • Embodiment 2 of the present application provides a stereoscopic temperature detector.
  • 3 is a schematic top plan view of the three-dimensional temperature detector
  • FIG. 4 is a longitudinal sectional structural view taken along line A-A of FIG. 3
  • FIG. 5 is a side view structural view of the three-dimensional temperature detector.
  • the stereoscopic temperature detector includes:
  • thermopile material structure 12 A first layer of thermopile material structure 12, a second dielectric layer structure 14, a second layer of thermopile material structure 17, and a third dielectric layer structure 18 stacked in this order from the bottom to the top of the first dielectric layer 10 And the first dielectric layer 10, the second dielectric layer structure 14, and the third dielectric layer structure 18 enclose a cavity 22;
  • the top of the cavity has a sixth recess 18b and an infrared absorbing layer structure 20 filling the sixth recess 18b, the infrared absorbing layer structure 20 having an eighth recess 21 for communicating the cavity 22 with the outside. ;
  • the second dielectric layer structure 14 has a third recess 15 and a fourth recess 16 at the top of the cavity 22 and outside the sixth recess 18b.
  • the third groove 15 is located outside the bottom of the cavity 22, and the second layer of thermopile material structure 17 is connected to the first layer of thermopile material structure 12 by the fourth groove 16.
  • the first dielectric layer 10 is responsible for the electrical insulation of the thermopile from the substrate 9, and the second dielectric layer structure 14 is responsible for the electrical insulation of the first layer of thermopile material structure 12 and the second layer of thermopile material structure 17,
  • the third dielectric layer structure 18 is responsible for the passivation and protection of the thermopile structure, and the infrared absorbing layer structure 20 and the first layer of the thermopile material structure 12 and the second layer of thermopile material structure 17 are electrically insulated; and the second dielectric layer structure 14 and the third dielectric layer structure 18 are distributed over the sidewalls and the upper surface of the entire cavity to form a three-dimensional support layer;
  • the structure 12 and the second layer of thermopile material structure 17 constitute a thermal junction and a cold junction of the thermopile for generating an electromotive force difference caused by the temperature difference;
  • the infrared absorption layer structure 20 is responsible for absorption from the outside through the optical system to the surface of the thermopile detector
  • first layer of thermopile material structure 12 may be adjacent at least two, and the second layer of thermopile material structure 17 may be adjacent at least two, wherein the second layer A thermopile material structure 17 is coupled to the adjacent first layer of thermopile material structure 12 via the third recess 15 to form a series of thermocouple pairs.
  • Embodiment 2 For a detailed description of the components of the stereoscopic temperature detector in Embodiment 2, reference may be made to Embodiment 1, and details are not described herein again.
  • thermocouple pair composed of a thermocouple double material
  • it is generally elongated and has a certain thickness
  • ⁇ thermal conductivity
  • S cross-sectional area
  • the closed membrane structure has an additional thermal conductivity, that is, the thermal conductivity of the support layer.
  • Different shapes of support layers have different thermal conductivity expressions.
  • a square infrared absorption region structure may be employed, wherein a and b are respectively the distance from the center of the sealing film to the hot junction region and the cold junction region, ⁇ mem is the thermal conductivity of the support layer, and t mem is the thickness thereof.
  • G men 8 ⁇ mem *t mem /Ln(b/a).
  • the distance from the center of the closed film to the hot junction is the same as that of the conventional method.
  • the distance to the cold junction region is increased to b + t PI due to its three-dimensional structure, where t PI refers to the thickness of the sacrificial layer. It can be seen from the above formula that the thermal conductivity value of the sealing film decreases as the length of the sealing film becomes longer.
  • ⁇ V is the potential difference generated by the Seebeck effect.
  • the two equations can be combined to obtain the relationship between the response rate and the thermal conductivity.
  • Rv ⁇ *t*N *( ⁇ 1- ⁇ 2)/G total .
  • the thermal conductivity decreases, the temperature difference generated by the thermopile increases, and the sensitivity or response rate of the detector increases accordingly.
  • the three-dimensional temperature detector of the present application increases the length of the support layer by forming a three-dimensional cavity, and the length of the film and the thermopile under the same size conditions as compared with the conventional thermopile.
  • the length of the dual material is increased, which in turn reduces the total thermal conductivity of the thermopile device and increases the sensitivity of the temperature detector to detect temperature.

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  • Radiation Pyrometers (AREA)

Abstract

L'invention concerne un détecteur de température en trois dimensions et son procédé de préparation, le détecteur de température vertical comprenant : un substrat (9) ; une première couche diélectrique (10) sur une surface du substrat ; une cavité (22) entourée par la première couche diélectrique (10), une première couche d'une structure de matériau de thermopile (12), une structure de deuxième couche diélectrique (14), une deuxième couche de la structure de matériau de thermopile (17), et une troisième couche de la structure de couche diélectrique ; un fond de la cavité (22) a une sixième rainure (18b) et une structure de couche d'absorption d'infrarouge (20) remplissant la sixième rainure (18b), la structure de couche d'absorption d'infrarouge (20) ayant une huitième rainure (21) ; la première couche de la structure de matériau de thermopile (12) est reliée à la deuxième couche de la structure de matériau de thermopile (17) par l'intermédiaire d'une quatrième rainure (16). Le détecteur de température vertical peut augmenter des paires de thermocouples de la thermopile et la longueur du film d'isolation thermique de thermopile, réduire la conductivité thermique, ce qui permet ainsi d'augmenter une différence de température entre la jonction de chaleur et la jonction de froid et d'améliorer la sensibilité du détecteur de température, en outre, d'améliorer la stabilité de traitement et les performances de dispositif dans le processus de fabrication.
PCT/CN2015/091662 2014-12-18 2015-10-10 Détecteur de température en trois dimensions et son procédé de fabrication WO2016095600A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110577188A (zh) * 2019-09-19 2019-12-17 中国科学院上海微系统与信息技术研究所 一种在衬底上制作悬浮红外热堆的方法
CN114242882A (zh) * 2021-12-07 2022-03-25 华东光电集成器件研究所 一种红外探测器芯片的制备方法

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* Cited by examiner, † Cited by third party
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CN104501970B (zh) * 2014-12-18 2017-05-03 上海新微技术研发中心有限公司 一种立体式温度探测器及其制造方法
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EP3947260A1 (fr) 2019-04-01 2022-02-09 Meridian Innovation Pte Ltd Intégration hétérogène de semi-conducteur à oxyde métallique complémentaire et de capteurs de mems
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CN111412996B (zh) * 2020-04-15 2021-10-01 无锡物联网创新中心有限公司 热电堆红外探测器及其热导通结构

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06117919A (ja) * 1992-10-05 1994-04-28 Nec Corp 赤外線センサ
JPH0743216A (ja) * 1993-07-26 1995-02-14 Nec Corp 赤外線センサおよびその製造方法
CN1433089A (zh) * 2002-01-18 2003-07-30 祥群科技股份有限公司 具有隐藏式热电偶支脚的热电堆红外线元件及其制造方法
JP2003282961A (ja) * 2002-03-25 2003-10-03 Ihi Aerospace Co Ltd 熱電対
CN202066597U (zh) * 2010-11-22 2011-12-07 烟台艾睿光电科技有限公司 一种微型桥式红外测温传感器
CN102947683A (zh) * 2010-04-26 2013-02-27 Hme有限公司 温度传感器及采用该温度传感器的辐射温度计、温度传感器的制造方法、采用光刻胶膜的多层薄膜热电堆及采用该热电堆的辐射温度计、以及多层薄膜热电堆的制造方法
JP2014048138A (ja) * 2012-08-31 2014-03-17 Mitsuteru Kimura 感光性ドライフイルムレジストを用いた多重層薄膜サーモパイルとこれを用いた放射温度計およびその多重層薄膜サーモパイルの製造方法
CN104501970A (zh) * 2014-12-18 2015-04-08 上海新微技术研发中心有限公司 一种立体式温度探测器及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3812411B2 (ja) * 2001-10-30 2006-08-23 株式会社デンソー メンブレンを有する半導体装置およびその製造方法
JP2005033075A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法
CN101665231B (zh) * 2009-09-18 2013-08-21 上海芯敏微系统技术有限公司 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法
CN102901567B (zh) * 2011-07-29 2015-05-13 江苏物联网研究发展中心 热电堆红外探测器、阵列及其制备方法
CN102583220B (zh) * 2012-03-29 2014-11-05 江苏物联网研究发展中心 一种晶圆级真空封装的红外探测器及其制作方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06117919A (ja) * 1992-10-05 1994-04-28 Nec Corp 赤外線センサ
JPH0743216A (ja) * 1993-07-26 1995-02-14 Nec Corp 赤外線センサおよびその製造方法
CN1433089A (zh) * 2002-01-18 2003-07-30 祥群科技股份有限公司 具有隐藏式热电偶支脚的热电堆红外线元件及其制造方法
JP2003282961A (ja) * 2002-03-25 2003-10-03 Ihi Aerospace Co Ltd 熱電対
CN102947683A (zh) * 2010-04-26 2013-02-27 Hme有限公司 温度传感器及采用该温度传感器的辐射温度计、温度传感器的制造方法、采用光刻胶膜的多层薄膜热电堆及采用该热电堆的辐射温度计、以及多层薄膜热电堆的制造方法
CN202066597U (zh) * 2010-11-22 2011-12-07 烟台艾睿光电科技有限公司 一种微型桥式红外测温传感器
JP2014048138A (ja) * 2012-08-31 2014-03-17 Mitsuteru Kimura 感光性ドライフイルムレジストを用いた多重層薄膜サーモパイルとこれを用いた放射温度計およびその多重層薄膜サーモパイルの製造方法
CN104501970A (zh) * 2014-12-18 2015-04-08 上海新微技术研发中心有限公司 一种立体式温度探测器及其制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110577188A (zh) * 2019-09-19 2019-12-17 中国科学院上海微系统与信息技术研究所 一种在衬底上制作悬浮红外热堆的方法
CN114242882A (zh) * 2021-12-07 2022-03-25 华东光电集成器件研究所 一种红外探测器芯片的制备方法
CN114242882B (zh) * 2021-12-07 2024-03-29 华东光电集成器件研究所 一种红外探测器芯片的制备方法

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