WO2016093297A1 - Mandrin électrostatique et dispositif de traitement de plaquette - Google Patents

Mandrin électrostatique et dispositif de traitement de plaquette Download PDF

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Publication number
WO2016093297A1
WO2016093297A1 PCT/JP2015/084611 JP2015084611W WO2016093297A1 WO 2016093297 A1 WO2016093297 A1 WO 2016093297A1 JP 2015084611 W JP2015084611 W JP 2015084611W WO 2016093297 A1 WO2016093297 A1 WO 2016093297A1
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WO
WIPO (PCT)
Prior art keywords
heater
electrostatic chuck
main surface
hole
viewed
Prior art date
Application number
PCT/JP2015/084611
Other languages
English (en)
Japanese (ja)
Inventor
和輝 穴田
雄一 吉井
Original Assignee
Toto株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015238822A external-priority patent/JP5987966B2/ja
Application filed by Toto株式会社 filed Critical Toto株式会社
Priority to KR1020177012449A priority Critical patent/KR101826695B1/ko
Priority to CN202010630896.7A priority patent/CN111883473B/zh
Priority to US15/534,798 priority patent/US10373853B2/en
Priority to CN201580066345.XA priority patent/CN107004629B/zh
Publication of WO2016093297A1 publication Critical patent/WO2016093297A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/28—Chucks characterised by features relating primarily to remote control of the gripping means using electric or magnetic means in the chuck
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Definitions

  • An aspect of the present invention generally relates to an electrostatic chuck and a wafer processing apparatus.
  • an electrostatic chuck is used as means for adsorbing and holding a processing object such as a semiconductor wafer or a glass substrate.
  • An electrostatic chuck is manufactured by sandwiching an electrode between ceramic substrates such as alumina and firing.
  • the electrostatic chuck applies electrostatic attraction power to a built-in electrode and attracts a substrate such as a silicon wafer by electrostatic force.
  • the present invention has been made based on the recognition of such a problem, and an object thereof is to provide an electrostatic chuck and a wafer processing apparatus capable of improving the uniformity of the temperature distribution in the surface of the processing object. .
  • the present invention is a polycrystalline ceramic sintered body having a first main surface on which an object to be processed is placed and a second main surface opposite to the first main surface.
  • a ceramic dielectric substrate, an electrode layer provided on the ceramic dielectric substrate, a base plate provided on the second main surface side and supporting the ceramic dielectric substrate, and between the electrode layer and the base plate A heater provided, and the base plate has a through-hole penetrating the base plate and a communication path through which a medium for adjusting the temperature of the object to be processed passes, and the base plate is connected to the first main surface.
  • a chuck is provided.
  • FIG. 6A and FIG. 6B are schematic plan views showing the vicinity of other through holes of this embodiment.
  • FIG. 7A and FIG. 7B are schematic plan views showing the vicinity of other through holes of this embodiment. It is a graph which illustrates an example of the relationship between the ratio of circumference and a temperature fall rate.
  • FIG. 12A and FIG. 12B are schematic plan views showing the folded portion of the heater.
  • FIG. 13A and FIG. 13B are schematic enlarged views in which the folded portion of the heater is enlarged. It is a graph which illustrates an example of the relationship between the ratio of the closest distance with respect to the distance between round ends, and the temperature difference in the surface of a process target object.
  • FIGS. 16A to 16E are schematic views illustrating an example of the temperature distribution in the surface of the processing object.
  • FIG. 17A and FIG. 17B are schematic views illustrating another electrostatic chuck according to this embodiment. It is a graph which illustrates an example of the relationship between temperature variation and the gap width of a bypass electrode. It is a graph which illustrates an example of the relationship between temperature variation and the gap depth of a bypass electrode. It is typical sectional drawing which illustrates the wafer processing apparatus which concerns on other embodiment of this invention.
  • the 1st invention has a 1st main surface in which a process target object is mounted, and the 2nd main surface on the opposite side to the said 1st main surface,
  • the ceramic dielectric which is a polycrystalline ceramic sintered compact
  • a substrate an electrode layer provided on the ceramic dielectric substrate, a base plate provided on the second main surface side to support the ceramic dielectric substrate, and provided between the electrode layer and the base plate.
  • a heater wherein the base plate has a through hole that passes through the base plate, and a communication path through which a medium that adjusts the temperature of the object to be processed passes, and is perpendicular to the first main surface. When viewed, at least a part of the heater is present on the side of the through-hole as viewed from the first portion of the communication path closest to the through-hole. .
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • the area of the cool spot that is most difficult to heat and the area of the hot spot that is most difficult to cool are approximately the same, so that it is easy to balance heating and cooling, and the surface of the object to be processed The uniformity of the temperature distribution inside can be improved.
  • the distance between the first portion and the central axis of the through hole is the through hole.
  • An electrostatic chuck characterized in that it is larger than the distance between the second portion of the heater closest to the center and the central axis of the through hole.
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • any two of the first portion and the through-hole side of the communication path Between the center of the first virtual circle that passes through the portion and the center of the second virtual circle that passes through the second portion and any two portions on the through hole side of the heater.
  • the electrostatic chuck is characterized in that the distance is 0.2 mm or less.
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • any two of the first portion and the through hole side of the communication path overlaps the center of the second virtual circle that passes through the second portion and any two portions on the through hole side of the heater. It is an electrostatic chuck.
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • the width of the communication path in the first portion is the second
  • the electrostatic chuck is wider than the width of the heater in the portion.
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • the length of the portion where the second virtual circle intersects the heater when viewed in a direction perpendicular to the first main surface is the second length.
  • the electrostatic chuck is characterized in that it is 50 percent or more and 80 percent or less with respect to the circumference of the virtual circle.
  • the area where the temperature adjustment within the surface of the object to be processed cannot be controlled can be limited by making the most difficult part to be heated and the most difficult part to be cooled to be substantially the same. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the processing object in another region different from the through hole.
  • the heater has a first folded portion bent from a first direction to a second direction different from the first direction.
  • a first heater and a second heater having a second folded portion provided in the vicinity of the first heater and bent from a third direction to a fourth direction different from the third direction;
  • the closest distance between the first folded portion and the second folded portion is between the round end portion of the first folded portion and the round end portion of the second folded portion. It is an electrostatic chuck characterized by being 50 percent or more and less than 100 percent with respect to the distance.
  • the temperature control of the object to be processed is performed by defining the proximity distance between the plurality of heaters in order to define the density of the space at the location where the folded portions of the plurality of heaters are close to each other. And the uniformity of the temperature distribution in the surface of the object to be processed can be improved.
  • the ratio of the area of the heater to the area of the ceramic dielectric substrate when viewed in a direction perpendicular to the first main surface is:
  • the electrostatic chuck is characterized by being 20% or more and 80% or less.
  • this electrostatic chuck it is possible to improve the uniformity of the temperature distribution in the surface of the object to be processed by arranging the heaters at an appropriate density.
  • the ratio of the area of the communication path to the area of the ceramic dielectric substrate when viewed in a direction perpendicular to the first main surface is The electrostatic chuck is 20% or more and 80% or less.
  • this electrostatic chuck it is possible to improve the uniformity of the temperature distribution in the surface of the object to be processed by arranging the communication paths at an appropriate density.
  • the ratio of the area of the heater to the area of the communication path when viewed in a direction perpendicular to the first main surface is 60%.
  • the electrostatic chuck is characterized by being 180% or less.
  • this electrostatic chuck it is possible to improve the uniformity of the temperature distribution in the surface of the object to be processed by arranging both the communication path and the heater at an appropriate density.
  • An eleventh invention according to any one of the first to tenth inventions, further comprising a plurality of bypass electrodes provided between the electrode layer and the base plate and electrically connected to the heater.
  • the electrostatic chuck is characterized in that a distance between adjacent bypass electrodes among the bypass electrodes is 0.05 mm or more and 10 mm or less.
  • the degree of freedom in arranging the heater can be improved by providing the bypass electrode. Furthermore, by defining the gap width between the bypass electrodes, non-uniform heat conduction caused by the gap between the bypass electrodes is suppressed. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the length along the direction perpendicular to the first main surface of the region between the bypass electrodes adjacent to each other among the bypass electrodes is 0.01 mm or more and 1 mm or less. It is an electrostatic chuck.
  • the degree of freedom in arranging the heater can be improved by providing the bypass electrode. Furthermore, by defining the gap depth between the bypass electrodes, heat conduction non-uniformity caused by the gap between the bypass electrodes is suppressed. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the thirteenth invention is a wafer processing apparatus comprising the electrostatic chuck according to any one of the first to twelfth inventions.
  • FIG. 1 is a schematic cross-sectional view illustrating the configuration of an electrostatic chuck according to this embodiment.
  • the electrostatic chuck 100 according to the present embodiment includes a ceramic dielectric substrate 11, an electrode layer 12, a heater 131, and a base plate 50.
  • the ceramic dielectric substrate 11 is mounted on the base plate 50.
  • the ceramic dielectric substrate 11 is a flat substrate made of, for example, a polycrystalline ceramic sintered body, and is opposite to the first main surface 11a on which the processing object W such as a semiconductor wafer is placed, and the first main surface 11a. Second main surface 11b on the side.
  • Examples of the crystal material included in the ceramic dielectric substrate 11 include Al 2 O 3 , Y 2 O 3, and YAG. By using such a material, it is possible to improve infrared transmittance, insulation resistance, and plasma durability in the ceramic dielectric substrate 11.
  • the electrode layer 12 is interposed between the first main surface 11a and the second main surface 11b. That is, the electrode layer 12 is formed so as to be inserted into the ceramic dielectric substrate 11.
  • the electrode layer 12 is integrally sintered with the ceramic dielectric substrate 11.
  • the electrostatic chuck substrate 110 is a plate-like structure including a ceramic dielectric substrate 11 and an electrode layer 12 provided on the ceramic dielectric substrate 11.
  • the electrode layer 12 is not limited to be interposed between the first main surface 11a and the second main surface 11b, and may be attached to the second main surface 11b. Therefore, the electrode layer 12 is not limited to being integrally sintered with the ceramic dielectric substrate 11.
  • the electrostatic chuck 100 generates a charge on the first main surface 11a side of the electrode layer 12 by applying an adsorption holding voltage 80 to the electrode layer 12, and holds the processing target W by electrostatic force.
  • the heater 131 generates heat when the heater current 133 flows through the heater electrode current introduction portion 132, and can raise the temperature of the processing object W.
  • the ceramic dielectric substrate 11 includes a first dielectric layer 111 between the electrode layer 12 and the first major surface 11a, and a second dielectric layer 112 between the electrode layer 12 and the second major surface 11b.
  • the heater 131 is incorporated in the second dielectric layer 112, for example.
  • the installation form of the heater 131 is not limited to the built-in type, but a heater metal formed by bonding a recess in the first dielectric layer 111 or the second dielectric layer 112, or a dielectric with a built-in heater. May be bonded or laminated to the second dielectric layer 112.
  • the shape of the heater electrode current introducing portion 132 is not particularly limited, such as metal embedding or bonding.
  • the heater 131 is provided closer to the electrode layer 12 than the second main surface 11b.
  • the heater 131 may be provided at the same position as the second main surface 11b, or may be provided on the side opposite to the electrode layer 12 when viewed from the second main surface 11b.
  • the heater 131 is provided on the side of the electrode layer 12 from the second main surface 11b, for example, the electrode and the heater are printed on a green sheet, and the laminated green sheet is fired inside the sintered body. May be.
  • the heater 131 When the heater 131 is provided at the same position as the second main surface 11b, the heater 131 may be formed on the second main surface 11b by an appropriate method such as screen printing, or by thermal spraying, PVD (Physical IV Vapor). It may be formed by a method such as Deposition) or CVD (Chemical Vapor Deposition).
  • PVD Physical IV Vapor
  • CVD Chemical Vapor Deposition
  • the heater 131 may be used for controlling the in-plane temperature distribution of the processing target W, and the position and structure of the heater 131 are not particularly limited.
  • the heater 131 may be provided inside the ceramic dielectric substrate 11 or may be provided as a separate member from the ceramic dielectric substrate 11.
  • the heater 131 may be sandwiched between the base plate 50 and the ceramic dielectric substrate 11.
  • the heater 131 may be a conductor or an insulating plate, or a heater plate including a thermoelectric element.
  • the heater 131 may be built in the ceramic, or may be coated on the second main surface 11b side of the ceramic dielectric substrate 11.
  • the manufacturing method of the heater 131 is not particularly limited.
  • the direction connecting the first main surface 11a and the second main surface 11b is the Z direction
  • one of the directions orthogonal to the Z direction is the X direction
  • the Z direction and the X direction are orthogonal.
  • the direction to do is referred to as the Y direction.
  • the electrode layer 12 is provided along the first main surface 11a and the second main surface 11b.
  • the electrode layer 12 is an adsorption electrode for adsorbing and holding the processing object W.
  • the electrode layer 12 may be monopolar or bipolar. Further, the electrode layer 12 may be a tripolar type or other multipolar type. The number of electrode layers 12 and the arrangement of the electrode layers 12 are appropriately selected.
  • the electrode layer 12 shown in FIG. 1 is a bipolar type, and a bipolar electrode layer 12 is provided on the same surface.
  • the infrared spectral transmittance of at least the first dielectric layer 111 of the ceramic dielectric substrate 11 is preferably 20% or more.
  • the infrared spectral transmittance is a value in terms of a thickness of 1 mm.
  • the infrared spectral transmittance of at least the first dielectric layer 111 of the ceramic dielectric substrate 11 is 20% or more, infrared rays emitted from the heater 131 in a state where the processing object W is placed on the first main surface 11a.
  • the ceramic dielectric substrate 11 can be efficiently transmitted. Therefore, it becomes difficult for heat to accumulate in the processing object W, and the controllability of the temperature of the processing object W is improved.
  • the temperature of the processing object W is likely to increase as the plasma power increases.
  • the heat transmitted to the processing object W by the plasma power is efficiently transmitted to the ceramic dielectric substrate 11. Further, the heat transferred to the ceramic dielectric substrate 11 by the heater 131 is efficiently transferred to the processing object W. Therefore, it becomes easy to efficiently transfer the processing object W and maintain it at a desired temperature.
  • the infrared spectral transmittance of the second dielectric layer 112 in addition to the first dielectric layer 111 is 20% or more. Since the infrared spectral transmittance of the first dielectric layer 111 and the second dielectric layer 112 is 20% or more, the infrared rays emitted from the heater 131 are more efficiently transmitted through the ceramic dielectric substrate 11, and the object to be processed The temperature controllability of W can be improved.
  • the ceramic dielectric substrate 11 is mounted on the base plate 50.
  • a heat resistant resin such as silicone, indium bonding, brazing, or the like is used.
  • the adhesive material is appropriately selected from the viewpoint of the operating temperature zone and cost, but a material that easily transmits infrared rays is more preferable.
  • the base plate 50 is divided into, for example, an upper part 50a and a lower part 50b made of aluminum. Brazing, electron beam welding, diffusion bonding, or the like can be used to connect the upper portion 50a and the lower portion 50b.
  • the manufacturing method of the base plate 50 is not limited to the above.
  • a communication passage 55 is provided at a boundary portion between the upper part 50a and the lower part 50b. That is, the communication path 55 is provided inside the base plate 50. One end of the communication path 55 is connected to the input path 51. The other end of the communication path 55 is connected to the output path 52.
  • the base plate 50 serves to adjust the temperature of the ceramic dielectric substrate 11. For example, when cooling the ceramic dielectric substrate 11, the cooling medium flows into the communication path 55 through the input path 51, passes through the communication path 55, and flows out from the communication path 55 through the output path 52. Thereby, the heat of the base plate 50 is absorbed by the cooling medium, and the ceramic dielectric substrate 11 attached thereon can be cooled.
  • the heater 131 can be built in the base plate 50. As described above, when the temperature of the ceramic dielectric substrate 11 is adjusted by the base plate 50, the temperature of the processing object W attracted and held by the electrostatic chuck 100 can be easily adjusted.
  • the lateral dimension Dh (corresponding to a width D3 described later) of the communication path 55 is smaller than the vertical dimension Dv (length along the Z direction) of the communication path 55.
  • a convex portion 13 is provided on the first main surface 11a side of the ceramic dielectric substrate 11 as necessary.
  • a groove 14 is provided between the convex portions 13 adjacent to each other. The grooves 14 communicate with each other. A space is formed between the back surface of the processing object W mounted on the electrostatic chuck 100 and the groove 14.
  • the introduction path 53 that penetrates the base plate 50 and the ceramic dielectric substrate 11 is connected to the groove 14.
  • a transmission gas such as helium (He)
  • He helium
  • the base plate 50 is provided with through holes 57 such as lift pin holes and sensor holes.
  • the lift pin hole (through hole 57 on the right side of the introduction path 53 in FIG. 1) penetrates the base plate 50 and the ceramic dielectric substrate 11.
  • the sensor hole (the through hole 57 on the left side of the introduction path 53 in FIG. 1) passes through the base plate 50.
  • a sensor (not shown) for detecting the temperature of the ceramic dielectric substrate 11 is installed in the sensor hole. That is, the through hole 57 may penetrate the base plate 50 and the ceramic dielectric substrate 11, but may penetrate the base plate 50 and not the ceramic dielectric substrate 11.
  • the through hole 57 is not limited to a lift pin hole or a sensor hole.
  • a connecting portion 20 is provided on the second main surface 11 b and the second dielectric layer 112 of the ceramic dielectric substrate 11.
  • a contact electrode 61 is provided on the upper portion 50 a of the base plate 50 corresponding to the position of the connecting portion 20. Therefore, when the electrostatic chuck 100 is attached to the upper part 50 a of the base plate 50, the contact electrode 61 comes into contact with the connection part 20. As a result, the contact electrode 61 and the electrode layer 12 are electrically connected via the connection portion 20.
  • a movable probe is used for the contact electrode 61.
  • reliable contact between the contact electrode 61 and the connecting portion 20 can be realized.
  • damage to the connection portion 20 due to the contact electrode 61 coming into contact with the connection portion 20 can be suppressed to a minimum.
  • the contact electrode 61 is not limited to the above, and may have any form such as a configuration in which the contact electrode 61 is simply in contact with the connection electrode 20 or a connection electrode 20 that is connected to the connection part 20 by fitting or screwing. .
  • FIG. 2 is a schematic plan view showing the vicinity of the through hole of the present embodiment.
  • FIG. 2 is a schematic plan view of the electrostatic chuck 100 as viewed in the direction of the arrow A shown in FIG.
  • FIG. 2 is a schematic plan view when the electrostatic chuck 100 is viewed in a direction perpendicular to the first main surface 11a.
  • the heater 131 and the communication path 55 are represented by solid lines instead of broken lines.
  • the heater 131 when viewed in a direction perpendicular to the first main surface 11 a, at least a part of the heater 131 is a portion of the communication path 55 closest to the through hole 57 (first (Part) It exists in the through-hole 57 side seeing from 55a.
  • the “part closest to the through hole 57” means, for example, a part closest to the central axis 57a of the through hole 57 when viewed in a direction perpendicular to the first main surface 11a.
  • the portion closest to the through hole 57 is a portion 55a.
  • the distance D1 between the central axis 57a of the through hole 57 and the portion 55a of the communication passage 55 closest to the through hole 57 when viewed in a direction perpendicular to the first main surface 11a is the center of the through hole 57. It is longer than the distance D2 between the shaft 57a and the portion (second portion) 131a of the heater 131 closest to the through hole 57.
  • the width D 3 of the communication passage 55 in the portion 55 a of the communication passage 55 closest to the through hole 57 is the portion 131 a of the heater 131 closest to the through hole 57.
  • the heater 131 is wider than the width D4.
  • the width D3 is, for example, about 5 millimeters (mm) or more and 10 mm or less.
  • the width D4 is, for example, about 0.5 mm or more and 3 mm or less.
  • the diameter D7 (see FIG. 3) of the through hole 57 is, for example, 0.05 mm or more and 10 mm or less.
  • a part including the part 131a of the heater 131 and a part including the part 55a of the communication path 55 each have a shape surrounding the through hole 57. It is desirable to have.
  • the shape surrounding the through hole 57 refers to a convex shape on the outer side as viewed from the through hole 57, and a substantially arc shape centering on the through hole 57 is desirable.
  • a circle approximated by the diameter of the inside of the heater 131 is referred to as a second virtual circle C2.
  • a circle approximated by the diameter of the inside of the heater 131 is referred to as a second virtual circle C2.
  • the portion 131 a of the heater 131 closest to the through hole 57 and the side of the through hole 57 in the heater 131 is defined as a second virtual circle C2.
  • the length of the portion (the arc CA1 and the arc CA2 in FIG. 2) where the second virtual circle C2 intersects the heater 131 is 50 percent (%) with respect to the circumferential length of the second virtual circle C2. Above, it is below 80%.
  • the position of the communication path 55 and the position of the heater 131 are measured using, for example, X-ray CT (Computed Tomography). If it is only the position of the heater 131, it can measure, for example using an ultrasonic flaw detector. It is also possible to observe the position of the communication path 55 and the position of the heater 131 by destructive inspection such as cross-sectional observation using a microscope such as a scanning electron microscope (Scanning-Electron-Microscopy: SEM).
  • the range in which the temperature adjustment in the surface of the object to be processed cannot be controlled can be limited by making the portion that is most difficult to heat and the portion that is most difficult to cool to be substantially the same.
  • the most difficult part to be heated and the most difficult part to cool are the parts in the vicinity of the through hole 57. Thereby, it is possible to improve the uniformity of the temperature distribution in the surface of the object to be processed in another region different from the through hole 57. Further, even in the vicinity of the through hole 57, the region of the cool spot that is most difficult to heat and the region of the hot spot that is most difficult to cool are substantially the same, so that it becomes easy to balance heating and cooling, and The uniformity of the in-plane temperature distribution can be improved.
  • FIG. 3 is a schematic plan view showing the vicinity of the through hole of the present embodiment.
  • FIG. 4 is a schematic plan view showing the folded portion of the heater of the present embodiment.
  • FIG. 3 is a schematic plan view of the electrostatic chuck 100 as viewed in the direction of the arrow A shown in FIG. In other words, FIG. 3 is a schematic plan view when the electrostatic chuck 100 is viewed in a direction perpendicular to the first main surface 11a.
  • the heater 131 and the communication path 55 are represented by solid lines instead of broken lines.
  • a circle approximated by the diameter inside the communication path 55 (on the side of the through hole 57) is defined as the first virtual circle C1.
  • the portion 55 a of the communication path 55 closest to the through hole 57 and the through hole 57 of the communication path 55 is defined as a first virtual circle C 1.
  • the distance D5 between the center 55d of the first virtual circle C1 and the center 131d of the second virtual circle C2 is within 0.2 mm.
  • the dimension D6 of the outer (outer periphery) portion (round portion) of the folded portion 131e of the heater 131 is, for example, about 0.6 mm or more and 1 mm or less (R0.6 or more, R1 or less).
  • the distance between the center 55d of the first virtual circle C1 and the center 131d of the second virtual circle C2 is more preferably 0 mm. That is, it is more preferable that the center 55d of the first virtual circle C1 overlaps the center 131d of the second virtual circle C2.
  • FIG. 5 is a schematic plan view showing the vicinity of another through hole of the present embodiment. 5 is a schematic plan view when the electrostatic chuck 100 is viewed in the direction of the arrow A shown in FIG.
  • the arrangement pattern of the heater 131 in the vicinity of the through hole 57 shown in FIG. 5 is different from the arrangement pattern of the heater 131 in the vicinity of the through hole 57 shown in FIGS. In the vicinity of the through hole 57 shown in FIGS. 2 and 3, the upper heater 131 is continuous. On the other hand, the upper heater 131 is not continuous in the vicinity of the through hole 57 shown in FIG. In any of the examples shown in FIGS. 2, 3, and 5, the arrangement pattern of the heaters 131 passes through the central axis 57 a of the through hole 57 when viewed in a direction perpendicular to the first main surface 11 a. It is symmetrical with respect to an arbitrary straight line 57b. When the through hole 57 is a lift pin hole, the arrangement pattern of the heaters 131 is relatively symmetric as viewed from an arbitrary straight line 57 b passing through the central axis 57 a of the through hole 57.
  • the length of the portion where the second virtual circle C2 intersects with the heater 131 is 50% of the circumference of the second virtual circle C2 ( %) Or more and 80% or less.
  • the distance D1, the distance D2, the width D3, the width D4, the distance D5, and the dimension D6 are as described above with reference to FIGS.
  • FIG. 6A and FIG. 6B are schematic plan views showing the vicinity of other through holes of this embodiment.
  • 6A and 6B are schematic plan views when the electrostatic chuck 100 is viewed in the direction of the arrow A shown in FIG. 1, similarly to FIGS.
  • the curvature of the planar shape of the upper heater 131 is larger than the curvature of the planar shape of the upper heater 131 in the vicinity of the through hole 57 shown in FIGS.
  • a part of the upper heater 131 overlaps a part of the communication path 55 in the Z direction in the vicinity of the through hole 57.
  • the heater 131 is configured by a pattern extending linearly along the XY plane.
  • the distance D1, the distance D2, the width D3, the width D4, and the distance D5 are as described above with reference to FIGS. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • FIG. 7A and FIG. 7B are schematic plan views showing the vicinity of other through holes of the present embodiment.
  • FIG. 7A and FIG. 7B are schematic plan views showing the vicinity of other through holes of this embodiment.
  • 7A and 7B are schematic plan views when the electrostatic chuck 100 is viewed in the direction of the arrow A shown in FIG. 1, as in FIGS. 2 and 3.
  • the communication path 55 is branched into a main flow path 551 and a sub flow path 552 in the vicinity of the through hole 57.
  • the width D8a of the sub-channel 552 is narrower than the width D3 of the main channel 551.
  • the width D8b of the sub flow channel 552 is narrower than the width D3 of the main flow channel 551.
  • the width of the flow path is the length of the flow path along the direction substantially perpendicular to the direction in which the cooling medium flows when viewed in the direction perpendicular to the first main surface 11a.
  • the portion 55a of the communication path 55 closest to the through hole 57 means “the portion of the main flow path 551 closest to the through hole 57”.
  • the distance D1, the distance D2, the width D3, the width D4, and the distance D5 are as described above with reference to FIGS.
  • FIG. 8 is a graph illustrating an example of a relationship between the circumference ratio and the temperature decrease rate.
  • the horizontal axis of the graph shown in FIG. 8 is a ratio between the length of the portion where the second virtual circle C2 intersects the heater 131 and the circumference of the second virtual circle C2 (second virtual circle C2).
  • the vertical axis of the graph shown in FIG. 8 represents the temperature decrease rate (%) with respect to the average temperature.
  • the rate is low.
  • the rate of temperature decrease with respect to the average temperature is preferably 10% or less.
  • the temperature decrease rate with respect to the average temperature is higher than 10%, it becomes difficult to appropriately heat the region in the vicinity of the through hole 57.
  • the through hole 57 when the ratio between the length of the portion where the second virtual circle C2 intersects the heater 131 and the circumference of the second virtual circle C2 is less than about 50%, the through hole 57 The heater 131 in the vicinity is insufficient. Therefore, it becomes difficult to appropriately heat the region in the vicinity of the through hole 57. In other words, the area near the through hole 57 may be a cool spot.
  • the ratio between the length of the portion where the second virtual circle C2 intersects the heater 131 and the circumferential length of the second virtual circle C2 is 50% or more and 80% or less. Is preferred. Further, the ratio between the length of the portion where the second virtual circle C2 intersects the heater 131 and the circumferential length of the second virtual circle C2 is more preferably 70% or more and 80% or less. . In this case, it is possible to provide a relatively large number of heaters 131 in the vicinity of the through hole 57 while ensuring an insulation distance between the heaters 131.
  • FIG. 9 is a graph illustrating an example of the relationship between temperature variation and heater area ratio. 9
  • the horizontal axis of the graph shown in FIG. 9 represents the heater area ratio (%).
  • the heater area ratio is the ratio of the area of the heater 131 to the area of the ceramic dielectric substrate 11 when viewed in the direction perpendicular to the first main surface 11a.
  • the left vertical axis in FIG. 9 represents the temperature variation ⁇ T (° C.) of the processing object W (for example, a wafer) placed on the electrostatic chuck and controlled in temperature.
  • the temperature variation ⁇ T is a temperature difference between the highest temperature location and the lowest temperature location in the plane of the processing object W (in the XY plane).
  • the heater area ratio can be changed by changing the width of the heater 131 or arranging the heaters 131 densely. As shown in FIG. 9, when the heater area ratio is 20% or less, the temperature variation ⁇ T is 5 ° C. or more, and the ratio Rt is 10% or more. As the heater area ratio further decreases, the temperature variation ⁇ T and the ratio Rt increase sharply. This is considered to be because when the heater 131 is rough, the region away from the heater 131 is difficult to heat.
  • the temperature variation ⁇ T is 5 ° C. or more, and the ratio Rt is 10% or more.
  • the temperature variation ⁇ T and the ratio Rt increase sharply. This is considered to be because, for example, the region where the heaters 131 are densely arranged is easily heated, while the region where the heaters 131 are not arranged remains difficult to heat. For this reason, a temperature difference becomes remarkable.
  • the heater area ratio is limited by factors other than temperature variations.
  • the closest distance between the heaters 131 is preferably 0.2 mm or more and 5 mm or less, and the distance from the heater 131 to the outer periphery of the ceramic dielectric substrate 11 is 0.05 mm or more. It is desirable that it is 7 mm or less. For this reason, the heater area ratio is less than 100%.
  • the heater area ratio is 90% or more, the withstand voltage between the heater and the heater is insufficient, and when the heater area ratio is 85% or more, the withstand voltage between the heater and the outer periphery is insufficient. .
  • the heater area ratio is desirably 20% or more and 80% or less. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the heater area ratio is more preferably 40% or more and 60% or less.
  • temperature variation (DELTA) T can be 2 degrees C or less, and ratio Rt can be 4% or less.
  • FIG. 10 is a graph illustrating an example of the relationship between temperature variation and communication passage area ratio.
  • the horizontal axis of FIG. 10 represents the communication path area ratio (%).
  • the communication path area ratio is the ratio of the area of the communication path 55 to the area of the ceramic dielectric substrate 11 when viewed in a direction perpendicular to the first main surface 11a.
  • FIG. 10 represents a temperature variation ⁇ T (° C.) similar to the left vertical axis in FIG.
  • the right vertical axis in FIG. 10 represents the ratio Rt (%) of the temperature variation from the reference, similar to the right vertical axis in FIG.
  • the communication passage area ratio can be changed by changing the width of the communication passage 55 or arranging the communication passages 55 densely.
  • a cooling medium is passed through the communication path 55.
  • the temperature variation ⁇ T is 5 ° C. or more
  • the ratio Rt is 10% or more.
  • the temperature variation ⁇ T and the ratio Rt increase sharply. This is considered to be because, for example, when the communication path 55 is rough, a region away from the communication path 55 tends to be a hot spot.
  • the temperature variation ⁇ T is 5 ° C. or more, and the ratio Rt is 10% or more.
  • the temperature variation ⁇ T and the ratio Rt increase steeply. This is considered to be because, for example, the area where the communication path 55 is densely arranged is easily cooled, while the area where the communication path 55 is not arranged remains difficult to be cooled. For this reason, a temperature difference becomes remarkable.
  • the communication passage area ratio is also limited by factors other than temperature variations.
  • the closest distance between the communication paths 55 is preferably 0.3 mm or more and 15 mm or less, and the distance from the communication path 55 to the outer periphery of the base plate 50 (the outer periphery of the upper portion 50a) is It is desirable that it is 0.3 mm or more and 10 mm or less. For this reason, the communication passage area ratio is less than 100%.
  • the communication passage area ratio is desirably 20% or more and 80% or less. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the communication passage area ratio is more preferably 40% or more and 60% or less.
  • temperature variation (DELTA) T can be 2 degrees C or less, and ratio Rt can be 4% or less.
  • FIG. 11 is a graph illustrating an example of the relationship between temperature variation and the ratio of the heater area to the communication path area.
  • the horizontal axis in FIG. 11 represents the ratio of the heater area to the communication path area. This is calculated by (heater area) / (communication path area) (%).
  • the heater area is an area of the heater 131 when viewed in a direction perpendicular to the first main surface 11a.
  • the communication path area is an area of the communication path 55 when viewed in a direction perpendicular to the first main surface 11a.
  • FIG. 11 represents a temperature variation ⁇ T (° C.) similar to the left vertical axis in FIG.
  • the right vertical axis in FIG. 11 represents the ratio Rt (%) of the temperature variation from the reference, similar to the right vertical axis in FIG.
  • the width of the heater 131 and the width of the communication path 55 in the electrostatic chuck described with reference to FIG. 1, or by arranging the heater 131 and the communication path 55 densely the area of the heater with respect to the area of the communication path.
  • the ratio of can be changed.
  • the minimum value of the width of the heater 131 is 0.5 mm
  • the minimum value of the width of the communication path 55 is 1 mm.
  • a cooling medium is passed through the communication path 55.
  • the temperature of the processing object W is controlled by heating the heater 131 while flowing a cooling medium through the communication path 55.
  • the temperature variation ⁇ T is 5 ° C. or more
  • the ratio Rt is 10% or more.
  • the temperature variation ⁇ T and the ratio Rt increase sharply. This is considered because the density of the communication path 55 is high with respect to the heater 131 and a cool spot is likely to occur.
  • the temperature variation ⁇ T is 5 ° C. or more
  • the ratio Rt is 10% or more.
  • the temperature variation ⁇ T and the ratio Rt increase sharply. This is considered because the density of the heater 131 is high with respect to the communication path 55 and a hot spot is likely to occur.
  • both the heater 131 and the communication path 55 are appropriately dense.
  • the ratio of the heater area to the communication path area is preferably 60% or more and 180% or less. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the ratio of the heater area to the communication path area is more preferably 100% or more and 140% or less. Thereby, temperature variation (DELTA) T can be 2 degrees C or less, and ratio Rt can be 4% or less.
  • the heater area ratio in FIG. 9, the communication path area ratio in FIG. 10, and the ratio of the heater area to the communication path area in FIG. 11 may be calculated for the entire suction surface of the electrostatic chuck 100. Then, it may be calculated for a range surrounded by the outer periphery of the electrostatic chuck 100 or may be calculated in a range of about 50 mm ⁇ 50 mm in the electrostatic chuck 100.
  • average values of values calculated from a plurality of (about three) ranges of 50 mm ⁇ 50 mm may be used.
  • FIG. 12 is a schematic plan view showing the folded portion of the heater.
  • FIG. 13 is a schematic enlarged view in which the folded portion of the heater is enlarged.
  • FIG. 12A is a schematic plan view showing a folded portion of the heater of the present embodiment.
  • FIG. 12B is a schematic plan view showing the folded portion of the heater of the comparative example.
  • FIG. 13A is a schematic enlarged view in which the area AR1 shown in FIG.
  • FIG. 13B is a schematic enlarged view in which the area AR2 shown in FIG. 12B is enlarged.
  • FIG. 12A shows a state in which the folded portions 131e of the plurality of heaters 131 are close to each other.
  • the folded portion 131e of the heater 131 is a portion bent from the first direction to a second direction different from the first direction.
  • FIG. 12B shows a state in which the folded portions 134e of the plurality of heaters 134 are close to each other.
  • the folded portion 134e of the heater 134 is a portion bent from the third direction to a fourth direction different from the third direction.
  • the first heater 135 is close to the second heater 136.
  • the first heater 137 is close to the second heater 138.
  • the processing target The temperature controllability of the object W may be reduced, and it may be difficult to improve the uniformity of the temperature distribution in the surface of the processing object W.
  • the temperature control of the processing object W is performed. The uniformity of the temperature distribution in the surface of the processing object W can be improved.
  • the closest distance between the first heater 135 and the second heater 136 is represented as “D11”.
  • the distance between the round end portion 131f of the folded portion 131e of the first heater 135 and the round end portion 131f of the folded portion 131e of the second heater 136 is represented as “D12”.
  • the “round end portion” refers to the intersection of the round portion and the straight portion.
  • the closest distance between the first heater 137 and the second heater 138 is represented as “D13”.
  • the distance between the round end portion 134f of the folded portion 134e of the first heater 137 and the round end portion 134f of the folded portion 134e of the second heater 138 is represented as “D14”.
  • the ratio (D11 / D12) between the closest distance D11 and the distance D12 between the round end portions 131f is 50% or more and less than 100%. In other words, the closest distance D11 is 50% or more and less than 100% with respect to the distance D12 between the round ends 131f.
  • the ratio (D13 / D14) between the closest distance D13 and the distance D14 between the round ends 134f is less than 50%. In other words, the closest distance D13 is less than 50% with respect to the distance D14 between the round ends 134f.
  • the object to be processed is defined by defining the proximity distance between the plurality of heaters 131 in order to define the density of the space portion 141 at the location where the folded portions 131e of the plurality of heaters 131 are close to each other.
  • the temperature controllability of W can be improved, and the uniformity of the temperature distribution in the surface of the processing object W can be improved.
  • FIG. 14 is a graph illustrating an example of the relationship between the ratio of the closest distance to the distance between the round ends and the temperature difference in the surface of the processing object.
  • FIG. 15 is a table illustrating an example of the relationship between the ratio of the closest distance to the distance between the round ends and the in-plane temperature difference of the processing object.
  • FIG. 16 is a schematic view illustrating an example of an in-plane temperature distribution of the processing object.
  • the inventor examined the relationship between the ratio of the closest distance to the distance between the round ends (the closest distance / the distance between the round ends) and the temperature difference in the surface of the object to be processed. Went. As shown in the table shown in FIG. 15, the present inventor has the ratio of the closest distance to the distance between the round ends is 22% (Case 1), 26% (Case 2), 33% (Case 3), 50 In the cases of% (case 4), 67% (Case 5), and 80% (Case 6), the in-plane temperature difference of the processing object W was examined.
  • FIGS. 14 to 16 An example of the results of the study is as shown in FIGS. 14 to 16 (e). That is, as shown in FIGS. 14 and 15, when the ratio of the closest distance to the distance between the round ends increases, the temperature difference in the surface of the processing target W decreases. When the in-plane temperature difference of the processing object W is 1 ° C. or less, the ratio of the closest distance to the distance between the round ends needs to be 50% or more and less than 100%. As shown in FIGS. 16C to 16E, when the ratio of the closest distance to the distance between the round ends is 50% or more and less than 100%, the first heater 135 is used. The temperature drop in the space 141 between the folded portion 131e and the folded portion 131e of the second heater 136 is suppressed.
  • FIG. 17A and FIG. 17B are schematic views illustrating another electrostatic chuck according to this embodiment.
  • FIG. 17A is a schematic cross-sectional view of the electrostatic chuck 101 according to the embodiment.
  • FIG. 17A corresponds to a schematic cross-sectional view in which a part of the cross section shown in FIG. 1 is enlarged.
  • the electrostatic chuck 101 illustrated in FIG. 17A has a bypass electrode 139.
  • the same description as the electrostatic chuck 100 described with reference to FIG. 1 can be applied to the electrostatic chuck 101.
  • the example shown in FIG. 17A is a heater plate structure, but a heater and a bypass electrode may be built in the ceramic, and the structure and manufacturing method are not limited.
  • the bypass electrode 139 is provided between the base plate 50 and the electrode layer 12 in the Z direction.
  • the bypass electrode 139 is located between the base plate 50 and the heater 131 in the Z direction.
  • the position of the bypass electrode 139 is not limited to this.
  • the bypass electrode 139 may be positioned between the electrode layer 12 and the heater 131 in the Z direction.
  • bypass electrode 139 examples include metals including at least one of stainless steel, titanium, chromium, nickel, copper, and aluminum.
  • the bypass electrode 139 is electrically connected to the heater 131.
  • the bypass electrode 139 is electrically connected to the terminal 62.
  • a heater current 133 (see FIG. 1) can flow through the heater 131 via the terminal 62 and the bypass electrode 139.
  • FIG. 17B is a schematic plan view illustrating the bypass electrode of this embodiment.
  • the electrostatic chuck 101 is provided with a plurality of bypass electrodes 139.
  • the first main surface 11a is substantially circular, and the plurality of bypass electrodes 139 preferably overlap substantially the entire first main surface 11a.
  • eight bypass electrodes 139 are provided.
  • the planar shape of each bypass electrode 139 is, for example, a substantially fan shape. This sector shape is a shape surrounded by an arc along the outer periphery of the first main surface 11a and two radii of the arc.
  • the bypass electrode may have a substantially comb shape or a substantially circular shape, and the shape of the bypass electrode is not limited.
  • the electrostatic chuck 101 is provided with a gap G1.
  • the gap G1 is a region between two adjacent bypass electrodes 139 (for example, the first bypass electrode 139a and the second bypass electrode 139b).
  • FIG. 18 is a graph illustrating an example of the relationship between the temperature variation and the gap width of the bypass electrode.
  • the horizontal axis of FIG. 18 represents the gap width D15 of the bypass electrode 139.
  • the gap width D15 is the width of the gap G1 shown in FIG. In other words, the gap width D15 is a distance between two bypass electrodes 139 adjacent to each other in the circumferential direction of the electrostatic chuck 101.
  • the left vertical axis in FIG. 18 represents the temperature variation ⁇ T (° C.) similar to the left vertical axis in FIG.
  • the right vertical axis in FIG. 18 represents the ratio Rt (%) of the temperature variation from the reference, similar to the right vertical axis in FIG.
  • FIG. 18 illustrates characteristics of the electrostatic chuck 101 when a plurality of gap widths D15 are changed.
  • the gap width D15 is 10 mm or less
  • the temperature variation ⁇ T is 5 ° C. or less
  • the ratio Rt is 10% or less. This is considered because the gap G1 is likely to function like a heat insulating layer.
  • the gap width D15 is less than 0.05 mm, the withstand voltage between the bypass electrodes 139 may be reduced.
  • the gap width D15 is desirably 0.05 mm or more and 10 mm or less. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the gap width D15 is more preferably 0.05 mm or more and 7.5 mm or less, and still more preferably 0.05 mm or more and 2.0 mm or less.
  • FIG. 19 is a graph illustrating an example of the relationship between temperature variation and the gap depth of the bypass electrode.
  • the horizontal axis of FIG. 19 represents the gap depth D16 of the bypass electrode 139.
  • the gap depth D16 is the depth of the gap G1 shown in FIG. 17A (the length along the direction perpendicular to the first major surface 11a). In other words, the gap depth D16 corresponds to the thickness of the bypass electrode 139.
  • the left vertical axis in FIG. 19 represents the temperature variation ⁇ T (° C.) similar to the left vertical axis in FIG.
  • the right vertical axis in FIG. 19 represents the temperature variation ratio Rt (%) from the reference, similar to the right vertical axis in FIG.
  • FIG. 19 exemplifies characteristics when the gap depth D16 is changed in the electrostatic chuck 101.
  • the gap depth D16 when the gap depth D16 is 1 mm or less, the temperature variation ⁇ T is 5 ° C. or less, and the ratio Rt is 10% or less.
  • the gap depth D16 is preferably 0.01 mm or more and 1 mm or less. Thereby, the uniformity of the temperature distribution in the surface of the processing object can be improved.
  • the gap depth D16 is more preferably 0.01 mm or more and 0.8 mm or less, and further preferably 0.01 mm or more and 0.4 mm or less.
  • FIG. 20 is a schematic cross-sectional view illustrating a wafer processing apparatus according to another embodiment of the invention.
  • a wafer processing apparatus 500 includes a processing container 501, an upper electrode 510, and the electrostatic chuck (for example, the electrostatic chuck 100) described above with reference to FIGS.
  • a processing gas inlet 502 for introducing processing gas into the inside is provided on the ceiling of the processing container 501.
  • the bottom plate of the processing vessel 501 is provided with an exhaust port 503 for exhausting the inside under reduced pressure.
  • a high frequency power source 504 is connected to the upper electrode 510 and the electrostatic chuck 100 so that a pair of electrodes having the upper electrode 510 and the electrostatic chuck 10 face each other in parallel at a predetermined interval. Yes.
  • the processing object W is a semiconductor substrate (wafer).
  • the processing object W is not limited to a semiconductor substrate (wafer), and may be, for example, a glass substrate used in a liquid crystal display device.
  • the high frequency power source 504 is electrically connected to the base plate 50 of the electrostatic chuck 100.
  • a metal material such as aluminum is used for the base plate 50. That is, the base plate 50 has conductivity. Thereby, the high frequency voltage is applied between the upper electrode 510 and the base plate 50.
  • An apparatus having a configuration such as the wafer processing apparatus 500 is generally called a parallel plate RIE (Reactive Ion Etching) apparatus, but the electrostatic chuck 100 according to the present embodiment is not limited to application to this apparatus.
  • ECR Electro Cyclotron Resonance
  • etching apparatus dielectric coupled plasma processing apparatus, helicon wave plasma processing apparatus, plasma separation type plasma processing apparatus, surface wave plasma processing apparatus, so-called decompression processing apparatus such as plasma CVD (Chemical Vapor Deposition)
  • plasma CVD Chemical Vapor Deposition
  • the electrostatic chuck 100 according to the present embodiment can be widely applied to a substrate processing apparatus that performs processing and inspection under atmospheric pressure, such as an exposure apparatus and an inspection apparatus.
  • the electrostatic chuck 100 considering the high plasma resistance of the electrostatic chuck 100 according to the present embodiment, it is preferable to apply the electrostatic chuck 100 to the plasma processing apparatus.
  • the description is abbreviate
  • an electrostatic chuck and a wafer processing apparatus that can improve the uniformity of the temperature distribution in the surface of the processing object are provided.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne un mandrin électrostatique pourvu : d'un substrat diélectrique céramique comprenant une première surface principale sur laquelle un objet à traiter sera placé et une seconde surface principale à l'opposé de la première surface principale, le substrat diélectrique céramique étant un corps fritté en céramique polycristalline ; d'une couche d'électrode disposée sur le substrat diélectrique céramique ; d'une plaque de base disposée côté seconde surface principale et soutenant le substrat diélectrique céramique ; et d'un dispositif de chauffage disposé entre la couche d'électrode et la plaque de base. Le mandrin électrostatique est caractérisé en ce que la plaque de base comprend un trou traversant pénétrant dans la plaque de base et un passage de communication servant à faire circuler un milieu destiné à réguler la température de l'objet à traiter, et en ce que, d'un point de vue dans une direction perpendiculaire à la première surface principale, au moins une partie du dispositif de chauffage est présente sur le côté du côté trou traversant vu depuis une première partie du passage de communication qui est la plus proche du trou traversant.
PCT/JP2015/084611 2014-12-10 2015-12-10 Mandrin électrostatique et dispositif de traitement de plaquette WO2016093297A1 (fr)

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KR1020177012449A KR101826695B1 (ko) 2014-12-10 2015-12-10 정전 척 및 웨이퍼 처리장치
CN202010630896.7A CN111883473B (zh) 2014-12-10 2015-12-10 静电吸盘及晶片处理装置
US15/534,798 US10373853B2 (en) 2014-12-10 2015-12-10 Electrostatic chuck and wafer processing apparatus
CN201580066345.XA CN107004629B (zh) 2014-12-10 2015-12-10 静电吸盘及晶片处理装置

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JP2014249729 2014-12-10
JP2015-238822 2015-12-07
JP2015238822A JP5987966B2 (ja) 2014-12-10 2015-12-07 静電チャックおよびウェーハ処理装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019131115A1 (fr) * 2017-12-28 2019-07-04 住友大阪セメント株式会社 Dispositif de mandrin électrostatique

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WO2019131115A1 (fr) * 2017-12-28 2019-07-04 住友大阪セメント株式会社 Dispositif de mandrin électrostatique
CN111512428A (zh) * 2017-12-28 2020-08-07 住友大阪水泥股份有限公司 静电卡盘装置
JPWO2019131115A1 (ja) * 2017-12-28 2021-01-07 住友大阪セメント株式会社 静電チャック装置
US11348819B2 (en) 2017-12-28 2022-05-31 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP7259765B2 (ja) 2017-12-28 2023-04-18 住友大阪セメント株式会社 静電チャック装置

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