WO2016090752A1 - Oled显示装置及其制造方法 - Google Patents

Oled显示装置及其制造方法 Download PDF

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Publication number
WO2016090752A1
WO2016090752A1 PCT/CN2015/072506 CN2015072506W WO2016090752A1 WO 2016090752 A1 WO2016090752 A1 WO 2016090752A1 CN 2015072506 W CN2015072506 W CN 2015072506W WO 2016090752 A1 WO2016090752 A1 WO 2016090752A1
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Prior art keywords
layer
substrate
metal layer
display device
oled display
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French (fr)
Inventor
石龙强
王宜凡
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/424,965 priority Critical patent/US9893132B2/en
Publication of WO2016090752A1 publication Critical patent/WO2016090752A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275—Electrical connections of the two substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display device and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • An OLED display device generally includes a substrate, an anode disposed on the substrate, an organic light-emitting layer disposed on the anode, an electron transport layer disposed on the organic light-emitting layer, and a cathode disposed on the electron transport layer.
  • the holes from the anode and the electrons from the cathode are emitted to the organic light-emitting layer, and these electrons and holes are combined to generate an excited electron-hole pair, and the excited electron-hole pair is converted from the excited state to the ground state. Achieve light.
  • OLEDs can be classified into passive matrix OLED (PMOLED) and active matrix OLED (AMOLED) according to different types of driving.
  • PMOLEDs have high power consumption, which hinders applications in large-area display devices.
  • the aperture ratio is reduced in accordance with an increase in the number of wires. Therefore, PMOLED is generally used as a display device of a small size.
  • AMOLEDs are commonly used as high-definition large-size display devices due to their high luminous efficacy.
  • the AMOLED can be further divided into a bottom-emitting AMOLED display device and a top-emitting AMOLED display device.
  • FIG. 1 is a cross-sectional view of a bottom emission AMOLED display device of the prior art.
  • the AMOLED display device includes a first substrate 10 and a second substrate 20 which are spaced apart from each other and face each other.
  • a plurality of thin film transistors T and a plurality of first electrodes 31 are formed on an inner surface of the first substrate 10, wherein each of the first electrodes 11 is connected to a thin film transistor T, and an organic layer 32 is formed on the first electrode 31 and the thin film transistor T
  • the second electrode 33 is formed on the organic layer 32.
  • the organic layer 32 emits light of three colors in one pixel region P: red light R, green light G, and blue light B.
  • a desiccant 21 formed on the inner surface of the second substrate 20 for removing water and air that may penetrate into the space between the first and second substrates 10, 20.
  • the encapsulant 12 is formed between the first and second substrates 10, 20, surrounding the first and second electrode layers 31, 33, and the organic layer 32.
  • a thin film transistor T or the like for protecting the above components from external water and air.
  • the bottom-emitting AMOLED display device shown in FIG. 1 light is emitted through the bottom surface on which the thin film transistor T is formed, and has a reduced aperture ratio as compared with the top emission type AMOLED display device.
  • the top-emitting AMOLED has a higher aperture ratio, since the cathode is usually laid on the organic layer, the selection of materials for manufacturing the cathode is limited, thereby limiting the transmittance of light and reducing the display effect. .
  • Another object of the present invention is to provide a method of manufacturing an OLED display device which can improve yield and productivity.
  • the present invention firstly provides an OLED display device including a first substrate, a second substrate spaced apart from the first substrate and disposed opposite to each other, and a plurality of thin film transistors disposed on an inner surface of the first substrate. a transparent anode disposed on the inner surface of the second substrate, a plurality of partition walls disposed on the transparent anode, a transfer hole formed between the partition walls, an organic layer disposed on the transparent anode and located in the transfer hole, and being disposed in the organic layer a metal cathode on the layer and the partition, the metal cathode being electrically connected to the drain of the thin film transistor.
  • the thin film transistor includes: a gate, a source metal layer, and a drain metal layer, wherein the source metal layer has a thickness smaller than a thickness of the drain metal layer; the source metal layer, the drain metal layer, and the A passivation layer is further disposed on a substrate, the passivation layer includes a recessed region and a raised region adjacent to the recessed region, and a bottom surface of the recessed region is flush with an upper surface of the drain metal layer And above the upper surface of the source metal layer, exposing a portion of the drain metal layer, the metal cathode on the organic layer correspondingly engaging into the recessed region and conforming to the bottom of the recessed region, thereby A metal cathode is connected to the drain metal layer through the recessed region.
  • the material of the transparent anode is indium tin oxide.
  • the material of the metal cathode is one of calcium, aluminum and magnesium.
  • the organic layer includes a hole transport layer in contact with the transparent anode, an electron transport layer in contact with the metal cathode, and an emission layer between the hole transport layer and the electron transport layer.
  • the invention also provides a method for manufacturing an OLED display device, comprising:
  • Step 1 forming a thin film transistor on the first substrate, including a gate, a source metal layer, and a drain metal layer, wherein the source metal layer has a thickness smaller than a thickness of the drain metal layer;
  • Step 2 forming a passivation layer on the source metal layer, the drain metal layer and the first substrate, forming a recess region of the passivation layer and a bump region connected to the recess region by a molding process ;
  • the bottom surface of the recessed region is flush with the upper surface of the drain metal layer and higher than the upper surface of the source metal layer to expose a portion of the drain metal layer;
  • Step 3 forming a transparent anode on the second substrate
  • Step 4 forming a partition on the transparent anode, the partition having a plurality of transmission holes corresponding to each of the pixel regions;
  • Step 5 forming an organic layer in the transmission hole on the transparent anode
  • Step 6 forming a metal cathode on the partition and the organic layer
  • Step 7 Bonding the first substrate and the second substrate together, and the metal cathode on the organic layer is correspondingly engaged into the recessed area and conforms to the bottom of the recessed area, so that the metal cathode passes through the The recessed region is connected to the drain metal layer.
  • the groove region of the passivation layer is designed to correspond to the position of the metal cathode on the organic layer, and the area of the groove region is larger than Or equal to the area of the metal cathode on the organic layer, such that when the first substrate and the second substrate are paired, the metal cathode on the organic layer can be fully engaged into the recessed region of the passivation layer.
  • the material of the transparent anode in the step 3 is indium tin oxide.
  • the material of the metal cathode in the step 5 is one of calcium, aluminum and magnesium.
  • the organic layer in the step 56 includes forming a hole transport layer in contact with the transparent anode, an electron transport layer in contact with the metal cathode, and an emission layer between the hole transport layer and the electron transport layer.
  • the present invention further provides an OLED display device including a first substrate, a second substrate spaced apart from the first substrate and disposed opposite to each other, a plurality of thin film transistors disposed on an inner surface of the first substrate, and disposed in the second substrate a transparent anode on the surface, a plurality of partition walls disposed on the transparent anode, a transfer hole formed between the partition walls, an organic layer disposed on the transparent anode and located in the transfer hole, and a metal disposed on the organic layer and the partition wall a cathode, the metal cathode being electrically connected to a drain of the thin film transistor;
  • the thin film transistor includes: a gate, a source metal layer, and a drain metal layer, the source metal layer having a thickness smaller than a thickness of the drain metal layer; the source metal layer and the drain metal layer And a passivation layer is further disposed on the first substrate, the passivation layer includes a recessed region and a raised region adjacent to the recessed region, the bottom surface of the recessed region being flush with the drain metal layer An upper surface and higher than an upper surface of the source metal layer, exposing a portion of the drain metal layer, wherein the metal cathode on the organic layer is correspondingly engaged into the recessed region and conforms to the bottom of the recessed region, thereby The metal cathode is connected to the drain metal layer through the recess region;
  • the organic layer comprises a hole transport layer in contact with the transparent anode, an electron transport layer in contact with the metal cathode, and an emission layer between the hole transport layer and the electron transport layer.
  • the OLED display device and the method of manufacturing the same provided by the present invention Forming the thin film transistor on the first substrate, the organic layer and the transparent anode are formed on the second substrate, and since the transparent anode is disposed on the metal cathode and is transparent, does not affect the selection of the cathode material, the OLED display device has High transmission top emission mode with high aperture ratio.
  • the OLED display device manufacturing method provided by the present invention can manufacture an OLED display device having a high aperture ratio and a high transmittance and improve yield and productivity.
  • Figure 1 is a cross-sectional view of a conventional bottom-emitting AMOLED display device
  • FIG. 2 is a cross-sectional view of an OLED display device of the present invention
  • FIG. 3 is a flow chart of a method of manufacturing an OLED display device of the present invention.
  • FIG. 4 is a cross-sectional view showing a portion of a thin film transistor and a passivation layer of an OLED display device of the present invention.
  • the present invention provides an OLED display device including a first substrate 100 , a second substrate 200 spaced apart from the first substrate 100 and disposed on the inner surface of the first substrate 100 .
  • a plurality of thin film transistors 101 a transparent anode 201 disposed on an inner surface of the second substrate 200, a plurality of partition walls 202 disposed on the transparent anode 201, a transmission hole 203 formed between the partition walls 202, and a transparent anode
  • An organic layer 204 located in the transmission hole 203, a metal cathode 205 disposed on the organic layer 204 and the partition 202, the metal cathode 205 being electrically connected to the drain of the thin film transistor 101;
  • the thin film transistor 101 includes a gate electrode 101a, a source metal layer 101b, and a drain metal layer 101c.
  • the source metal layer 101b has a thickness smaller than a thickness of the drain metal layer 101c.
  • the source metal The passivation layer 103 is further disposed on the layer 101b and the drain metal layer 101c and the first substrate 100.
  • the passivation layer 103 includes a recessed region 101d and a raised region 101e adjacent to the recessed region 101d.
  • the bottom surface of the recessed region 101d is flush with the upper surface of the drain metal layer 101c and higher than the upper surface of the source metal layer 101b, exposing a portion of the drain metal layer 101c,
  • the metal cathode 205 on the organic layer 204 is correspondingly engaged into the recessed portion 101d and conforms to the bottom of the recessed portion 101d, so that the metal cathode 205 passes through the recessed region 101d and the drain metal layer 101c.
  • the exposed parts are connected.
  • the width of the partition 202 in contact with the transparent anode 201 is smaller than the width of the contact with the metal cathode 205.
  • the material of the transparent anode 201 is indium tin oxide.
  • the material of the metal cathode 205 is one of calcium, aluminum and magnesium.
  • the organic layer 204 includes a hole transport layer in contact with the transparent anode 201, an electron transport layer in contact with the metal cathode 205, and an emission layer between the hole transport layer and the electron transport layer.
  • the OLED display device of the present invention is a top emission type AMOLED display device having a specific high aperture ratio.
  • the present invention further provides a method for manufacturing an OLED display device, including:
  • Step 1 forming a thin film crystal 101 on the first substrate 100, including a gate electrode 101a, an active layer, a source 101b, and a drain 101c;
  • the specific step is: forming a polysilicon layer on the first substrate 100, the polycrystalline silicon layer includes: an active layer, a source region and a drain region on both sides of the active layer, and the polysilicon layer is covered with an insulating layer.
  • the insulating layer covers the entire active layer and a part of the source region and the drain region, and a gate electrode 101a is formed on the insulating layer of the active layer, and a metal layer is coated from a portion exposed from the source region and the drain region to form a metal layer.
  • a source metal layer 101b and a drain metal layer 101c are formed, the source metal layer 101b having a thickness smaller than a thickness of the drain metal layer 101c.
  • Step 2 forming a passivation layer 103 on the source metal layer 101b, the drain metal layer 101c, and the first substrate 100, forming a recess region 101d of the passivation layer 103 and the recess by a molding process a raised area 101e connected to the area 101d;
  • the bottom surface of the recessed region 101d is flush with the upper surface of the drain metal layer 101c and higher than the upper surface of the source metal layer 101b, exposing a portion of the drain metal layer 101c;
  • Step 3 forming a transparent anode 201 on the second substrate 200;
  • the material of the transparent anode 201 in the step 3 is indium tin oxide.
  • Step 4 forming a partition wall 202 on the transparent anode 201, the partition wall 202 has a plurality of transmission holes 203 corresponding to each pixel area;
  • the partition wall 202 is an organic material or an inorganic material, and may be formed such that a width of a bottom portion of the partition wall 202 in contact with the transparent anode 201 is larger than a width of a top portion in contact with the metal cathode 205.
  • Step 5 forming an organic layer 204 in the transmission hole 203 on the transparent anode 201;
  • the organic layer 204 in the step 5 includes a hole transport layer in contact with the transparent anode 201, an electron transport layer in contact with the metal cathode 205, and an emission layer between the hole transport layer and the electron transport layer.
  • the organic layer 204 can emit light of three colors of red, green, and blue.
  • the height of the organic layer 204 is lower than the height of the partition wall 202.
  • Step 6 forming a metal cathode 205 on the partition 202 and the organic layer 204;
  • the material of the metal cathode 205 in the step 6 is one of calcium, aluminum and magnesium;
  • Step 7 Bonding the first substrate 100 and the second substrate 200 together, the metal cathode 205 on the organic layer 204 is correspondingly engaged into the groove region 101d and conforms to the bottom of the groove region 101d, thereby The metal cathode 205 is connected to the drain metal layer 101c through the recess region 101d.
  • the recessed region 101d of the passivation layer 103 is designed to correspond to the position of the metal cathode 205 on the organic layer 204, and the recess
  • the area of the groove region 101d is greater than or equal to the area of the metal cathode 205 on the organic layer 204 such that when the first and second substrates are paired, the metal cathode 205 on the organic layer 204 can be fully engaged to the
  • the recessed layer 103 is in the recessed region 101d.
  • the OLED display device and the method of fabricating the same according to the present invention by forming a thin film transistor on a first substrate, an organic layer and a transparent anode are formed on the second substrate, since the transparent anode is disposed on the metal cathode and is transparent, does not affect The choice of cathode material, therefore the OLED display device is a top emission mode with high perspective, with a high aperture ratio.
  • the OLED display device manufacturing method provided by the present invention can manufacture an OLED display device having a high aperture ratio and a high transmittance and improve yield and productivity.

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Abstract

一种ＯＬＥＤ显示装置及其制造方法，所述ＯＬＥＤ显示装置包括第一基板（１００）、与所述第一基板（１００）间隔且正对设置的第二基板（２００）、设于第一基板（１００）内表面的多个薄膜晶体管（１０１）、设于第二基板（２００）内表面上的透明阳极（２０１）、设于透明阳极（２０１）上的多个间壁（２０２）、形成于所述间壁（２０２）之间的传输孔（２０３）、设于透明阳极（２０１）上且位于传输孔（２０３）内的有机层（２０４）、设于有机层（２０４）和间壁（２０２）上的金属阴极（２０５），所述金属阴极（２０５）与薄膜晶体管（１０１）的漏极电性连接。所述ＯＬＥＤ显示装置具有高孔径比和高透视率，所述ＯＬＥＤ显示装置的制造方法可以制造具有高孔径比和高透视率的ＯＬＥＤ显示装置，并提高成品率和生产率。

Description

OLED显示装置及其制造方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示装置及其制造方法。
背景技术
有机电致发光显示(Organic Light Emitting Display，OLED)是一种极具发展前景的显示技术，它不仅具有十分优异的显示性能，还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
OLED显示装置通常包括：基板、设于基板上的阳极、设于阳极上的有机发光层，设于有机发光层上的电子传输层、及设于电子传输层上的阴极。工作时向有机发光层发射来自阳极的空穴和来自阴极的电子，将这些电子和空穴组合产生激发性电子-空穴对，并将激发性电子-空穴对从受激态转换为基态实现发光。
OLED按照驱动类型的不同，可分为无源矩阵OLED(PMOLED)和有源矩阵OLED(AMOLED)。PMOLED具有高功耗，从而阻碍了在大面积显示装置中的应用。另外，在PMOLED中，孔径比根据电线数量的增大而减小。因此，PMOLED通常用作小尺寸的显示装置。而AMOLED因其高发光效能，通常用作高清晰度的大尺寸显示装置。
另一方面，根据从有机发光层发射的光的发射方向，AMOLED又可以分为底发光AMOLED显示装置和顶发光AMOLED显示装置。
请参阅图1，图1是现有技术的一种底发光AMOLED显示装置的剖面图。如图1所示，该AMOLED显示装置包括第一基板10和第二基板20，彼此隔开且相互面对。多个薄膜晶体管T和多个第一电极31形成在第一基板10的内表面上，其中每一第一电极11与一薄膜晶体管T相连，有机层32形成在第一电极31和薄膜晶体管T上，第二电极33形成在有机层32上。有机层32在一个像素区域P中发出三种颜色的光：红光R、绿光G、蓝光B。还包括：形成在第二基板20内表面上的干燥剂21，用于除去可能穿透到第一、第二基板10、20之间的间隔空间中的水和空气。密封剂12形成在第一、第二基板10、20之间，包围第一、二电极层31、33，有机层 32、薄膜晶体管T等元件，用于保护上述元件远离外来的水和空气。
图1所示的底发光AMOLED显示装置，光经过形成有薄膜晶体管T的底面发出，与顶发光型AMOLED显示装置相比具有降低的孔径比。另一方面，虽然顶发光型AMOLED具有较高的孔径比，但由于阴极通常铺设于有机层上，用于制造阴极的材料的选择受到了限制，因而限制了光的透射率，降低了显示效果。
发明内容
本发明的目的在于提供一种OLED显示装置，其具有高透射率的顶发射模式，且具有高孔径比。
本发明的另一目的在于提供一种OLED显示装置的制造方法，其可以提高成品率与生产率。
为实现上述目的，本发明首先提供了一种OLED显示装置，包括第一基板、与所述第一基板间隔且正对设置的第二基板、设于第一基板内表面的多个薄膜晶体管、设于第二基板内表面上的透明阳极、设于透明阳极上的多个间壁、形成于所述间壁之间的传输孔、设于透明阳极上且位于传输孔内的有机层、设于有机层和间壁上的金属阴极，所述金属阴极与薄膜晶体管的漏极电性连接。
所述薄膜晶体管包括：栅极、源极金属层、及漏极金属层，所述源极金属层厚度小于所述漏极金属层的厚度；所述源极金属层、漏极金属层及第一基板上还设有钝化层，所述钝化层包括凹槽区以及与所述凹槽区相邻的凸起区，所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连。
所述透明阳极的材料为铟锡氧化物。
所述金属阴极的材料为钙、铝和镁的其中之一。
所述有机层包括与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
本发明还提供一种OLED显示装置的制造方法，包括：
步骤1、在第一基板上形成薄膜晶体管，包括栅极、源极金属层、及漏极金属层，其中所述源极金属层厚度小于所述漏极金属层的厚度；
步骤2、在所述源极金属层、漏极金属层和第一基板上形成钝化层，通过成型工艺形成所述钝化层的凹槽区以及与所述凹槽区相连的凸起区；
其中所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分；
步骤3、在第二基板上形成透明阳极；
步骤4、在透明阳极上形成间壁，所述间壁具有对应于每个像素区域的多个传输孔；
步骤5、在透明阳极上形成位于传输孔内的有机层；
步骤6、在间壁和有机层上形成金属阴极；
步骤7、将第一基板和第二基板粘接在一起，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连。
在制作第一基板与第二基板上的各种元件时，设计所述钝化层的凹槽区与所述位于有机层上的金属阴极的位置相对应，并且所述凹槽区的面积大于或等于位于有机层上的金属阴极的面积，使得当第一基板与第二基板对组时，所述位于有机层上的金属阴极能够完全卡合到所述钝化层的凹槽区内。
所述步骤3中透明阳极的材料为铟锡氧化物。
所述步骤5中金属阴极的材料为钙、铝和镁的其中之一。
所述步骤56中有机层包括形成与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
本发明还提供一种OLED显示装置，包括第一基板、与所述第一基板间隔且正对设置的第二基板、设于第一基板内表面的多个薄膜晶体管、设于第二基板内表面上的透明阳极、设于透明阳极上的多个间壁、形成于所述间壁之间的传输孔、设于透明阳极上且位于传输孔内的有机层、设于有机层和间壁上的金属阴极，所述金属阴极与薄膜晶体管的漏极电性连接；
其中，所述薄膜晶体管包括：栅极、源极金属层、及漏极金属层，所述源极金属层厚度小于所述漏极金属层的厚度；所述源极金属层以及漏极金属层及第一基板上还设有钝化层，所述钝化层包括凹槽区以及与所述凹槽区相邻的凸起区，所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连；
其中，所述有机层包括与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
本发明的有益效果：本发明提供的OLED显示装置及其制造方法，通 过将薄膜晶体管形成在第一基板上，有机层和透明阳极形成在第二基板上，由于透明阳极设置在金属阴极上并且是透明的，不影响阴极材料的选择，因此该OLED显示装置是具有高透射率的顶发射模式，具有高孔径比。本发明提供的OLED显示装置制造方法可以制造具有高孔径比和高透视率的OLED显示装置并提高成品率和生产率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1现有的底发光AMOLED显示装置的剖面图；
图2为本发明OLED显示装置的剖面图；
图3为本发明OLED显示装置的制造方法流程图；
图4为本发明OLED显示装置的薄膜晶体管与钝化层部分的剖面图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2及图4，本发明提供了一种OLED显示装置，包括第一基板100、与所述第一基板100间隔且正对设置的第二基板200、设于第一基板100内表面的多个薄膜晶体管101、设于第二基板200内表面上的透明阳极201、设于透明阳极201上的多个间壁202、形成于所述间壁202之间的传输孔203、设于透明阳极201上且位于传输孔203内的有机层204、设于有机层204和间壁202上的金属阴极205，所述金属阴极205与薄膜晶体管101的漏极电性连接；
其中，所述薄膜晶体管101包括：栅极101a、源极金属层101b、及漏极金属层101c，所述源极金属层101b厚度小于所述漏极金属层101c的厚度；所述源极金属层101b以及漏极金属层101c及第一基板100上还设有钝化层103，所述钝化层103包括：凹槽区101d以及与所述凹槽区101d相邻的凸起区101e，所述凹槽区101d的底面平齐于漏极金属层101c的上表面且高于源极金属层101b的上表面，暴露出漏极金属层101c的一部分， 所述位于有机层204上的金属阴极205对应卡合到所述凹槽区101d内并贴合凹槽区101d底部，从而所述金属阴极205通过所述凹槽区101d与漏极金属层101c暴露出的部分相连。
具体的，所述间壁202与透明阳极201接触的宽度小于与金属阴极205接触的宽度。所述透明阳极201的材料为铟锡氧化物。所述金属阴极205的材料为钙、铝和镁的其中之一。所述有机层204包括与透明阳极201接触的空穴传输层、与金属阴极205接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。通过薄膜晶体管101接收的控制信号对透明阳极201和金属阴极205之间的电压进行控制使得有机层204发光，发出的光从透明阳极201射出，或经过金属阴极205反射后经过透明阳极201射出，因此本发明的OLED显示装置为一种具体高孔径比的顶发射型AMOLED显示装置。
请参阅图3及图4，本发明还提供了一种OLED显示装置的制造方法，包括：
步骤1、在第一基板100上形成薄膜晶体101，包括栅极101a、有源层、源极101b、及漏极101c；
具体步骤为：在第一基板100形成多晶硅层，所述多晶体硅层包括：有源层，有源层两侧的源极区域、漏极区域，所述多晶硅层上覆盖有绝缘层，所述绝缘层覆盖整个有源层和部分源极区域、漏极区域，在有源层的绝缘层上形成栅极101a，从源极区域和漏极区域露出的部分开始涂布金属层使得金属层成型，形成源极金属层101b和漏极金属层101c，所述源极金属层101b的厚度小于所述漏极金属层101c的厚度。
步骤2、在所述源极金属层101b、漏极金属层101c和第一基板100上形成钝化层103，通过成型工艺形成所述钝化层103的凹槽区101d以及与所述凹槽区101d相连的凸起区101e；
所述凹槽区101d的底面平齐于漏极金属层101c的上表面且高于源极金属层101b的上表面，暴露出漏极金属层101c的一部分；
步骤3、在第二基板200上形成透明阳极201；
所述步骤3中透明阳极201的材料为铟锡氧化物。
步骤4、在透明阳极201上形成间壁202，所述间壁202具有对应于每个像素区域的多个传输孔203；
所述间壁202为有机材料或无机材料，并且可以形成为：所述间壁202与透明阳极201接触的底部的宽度大于与金属阴极205接触的顶部的宽度。
步骤5、在透明阳极201上形成位于传输孔203内的有机层204；
所述步骤5中有机层204包括与透明阳极201接触的空穴传输层、与金属阴极205接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。有机层204可以发光红、绿、蓝三种颜色的光线。所述有机层204的高度低于间壁202的高度。
步骤6、在间壁202和有机层204上形成金属阴极205；
所述步骤6中金属阴极205的材料为钙、铝和镁的其中之一；
步骤7、将第一基板100和第二基板200粘接在一起，所述位于有机层204上的金属阴极205对应卡合到所述凹槽区101d内并贴合凹槽区101d底部，从而所述金属阴极205通过所述凹槽区101d与漏极金属层101c相连。
本发明在制作第一与第二基板上的各种元件时，设计所述钝化层103的凹槽区101d与所述位于有机层204上的金属阴极205的位置相对应，并且所述凹槽区101d的面积大于或等于位于有机层204上的金属阴极205的面积，使得当第一和第二基板对组时，所述位于有机层204上的金属阴极205能够完全卡合到所述钝化层103的凹槽区101d内。
本发明提供的OLED显示装置及其制造方法，通过将薄膜晶体管形成在第一基板上，有机层和透明阳极形成在第二基板上，由于透明阳极设置在金属阴极上并且是透明的，不影响阴极材料的选择，因此该OLED显示装置是具有高透视率的顶发射模式，具有高孔径比。本发明提供的OLED显示装置制造方法可以制造具有高孔径比和高透视率的OLED显示装置并提高成品率和生产率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED显示装置，包括第一基板、与所述第一基板间隔且正对设置的第二基板、设于第一基板内表面的多个薄膜晶体管、设于第二基板内表面上的透明阳极、设于透明阳极上的多个间壁、形成于所述间壁之间的传输孔、设于透明阳极上且位于传输孔内的有机层、设于有机层和间壁上的金属阴极，所述金属阴极与薄膜晶体管的漏极电性连接。
  2. 如权利要求1所述的OLED显示装置，其中，所述薄膜晶体管包括：栅极、源极金属层、及漏极金属层，所述源极金属层厚度小于所述漏极金属层的厚度；所述源极金属层以及漏极金属层及第一基板上还设有钝化层，所述钝化层包括凹槽区以及与所述凹槽区相邻的凸起区，所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连。
  3. 如权利要求1所述的OLED显示装置，其中，所述透明阳极的材料为铟锡氧化物。
  4. 如权利要求1所述的OLED显示装置，其中，所述金属阴极的材料为钙、铝和镁的其中之一。
  5. 如权利要求1所述的OLED显示装置，其中，所述有机层包括与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
  6. 一种OLED显示装置的制造方法，包括：
    步骤1、在第一基板上形成薄膜晶体管，包括栅极、源极金属层、及漏极金属层，其中所述源极金属层厚度小于所述漏极金属层的厚度；
    步骤2、在所述源极金属层、漏极金属层和第一基板上形成钝化层，通过成型工艺形成所述钝化层的凹槽区以及与所述凹槽区相连的凸起区；
    其中所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分；
    步骤3、在第二基板上形成透明阳极；
    步骤4、在透明阳极上形成间壁，所述间壁具有对应于每个像素区域的多个传输孔；
    步骤5、在透明阳极上形成位于传输孔内的有机层；
    步骤6、在间壁和有机层上形成金属阴极；
    步骤7、将第一基板和第二基板粘接在一起，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连。
  7. 如权利要求6所述的OLED显示装置的制造方法，其中，在制作第一基板与第二基板上的各种元件时，设计所述钝化层的凹槽区与所述位于有机层上的金属阴极的位置相对应，并且所述凹槽区的面积大于或等于位于有机层上的金属阴极的面积，使得当第一基板与第二基板对组时，所述位于有机层上的金属阴极能够完全卡合到所述钝化层的凹槽区内。
  8. 如权利要求6所述的OLED显示装置的制造方法，其中，所述步骤3中透明阳极的材料为铟锡氧化物。
  9. 如权利要求6所述的OLED显示装置的制造方法，其中，所述步骤5中金属阴极的材料为钙、铝和镁的其中之一。
  10. 如权利要求6所述的OLED显示装置的制造方法，其中，所述步骤6中有机层包括形成与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
  11. 一种OLED显示装置，包括第一基板、与所述第一基板间隔且正对设置的第二基板、设于第一基板内表面的多个薄膜晶体管、设于第二基板内表面上的透明阳极、设于透明阳极上的多个间壁、形成于所述间壁之间的传输孔、设于透明阳极上且位于传输孔内的有机层、设于有机层和间壁上的金属阴极，所述金属阴极与薄膜晶体管的漏极电性连接；
    其中，所述薄膜晶体管包括：栅极、源极金属层、及漏极金属层，所述源极金属层厚度小于所述漏极金属层的厚度；所述源极金属层以及漏极金属层及第一基板上还设有钝化层，所述钝化层包括凹槽区以及与所述凹槽区相邻的凸起区，所述凹槽区的底面平齐于漏极金属层的上表面且高于源极金属层的上表面，暴露出漏极金属层的一部分，所述位于有机层上的金属阴极对应卡合到所述凹槽区内并贴合凹槽区底部，从而所述金属阴极通过所述凹槽区与漏极金属层相连；
    其中，所述有机层包括与透明阳极接触的空穴传输层、与金属阴极接触的电子传输层、及位于空穴传输层和电子传输层之间的发射层。
  12. 如权利要求11所述的OLED显示装置，其中，所述透明阳极的材料为铟锡氧化物。
  13. 如权利要求11所述的OLED显示装置，其中，所述金属阴极的材料为钙、铝和镁的其中之一。
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CN108232031A (zh) * 2018-01-03 2018-06-29 深圳市华星光电技术有限公司 Oled显示器件及制备方法
CN108878486A (zh) * 2018-06-26 2018-11-23 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
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JP7574065B2 (ja) * 2020-11-26 2024-10-28 株式会社ジャパンディスプレイ 表示装置

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