WO2016088216A1 - Procédé de fabrication de filtre optique - Google Patents

Procédé de fabrication de filtre optique Download PDF

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Publication number
WO2016088216A1
WO2016088216A1 PCT/JP2014/081955 JP2014081955W WO2016088216A1 WO 2016088216 A1 WO2016088216 A1 WO 2016088216A1 JP 2014081955 W JP2014081955 W JP 2014081955W WO 2016088216 A1 WO2016088216 A1 WO 2016088216A1
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WO
WIPO (PCT)
Prior art keywords
mask
layer
openings
mask layer
forming
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Application number
PCT/JP2014/081955
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English (en)
Japanese (ja)
Inventor
甲二 埴原
松本　耕
Original Assignee
パイオニア株式会社
パイオニア・マイクロ・テクノロジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by パイオニア株式会社, パイオニア・マイクロ・テクノロジー株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2014/081955 priority Critical patent/WO2016088216A1/fr
Priority to JP2016562139A priority patent/JPWO2016088216A1/ja
Publication of WO2016088216A1 publication Critical patent/WO2016088216A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

Definitions

  • the present invention relates to a method for manufacturing an optical filter in which a plurality of filter portions having different transmission characteristics are integrally formed.
  • the conventional manufacturing method when the mask member is fixedly arranged on the light receiving element array, the position of each filter part to be formed is masked against the workpiece in order to avoid displacement from each light receiving part of the light receiving element array. It was necessary to align the members with high accuracy. However, in order to perform such mechanical alignment with high accuracy, an expensive special alignment mechanism is required. As a result, the conventional manufacturing method has a problem that the manufacturing cost of the optical filter increases.
  • the present invention provides a method of manufacturing an optical filter capable of easily and accurately aligning a sputter mask with respect to a workpiece and forming an optical filter constituting a plurality of filter portions easily and accurately. It is an issue.
  • the optical filter manufacturing method of the present invention is an optical filter manufacturing method for forming an optical filter constituting a plurality of filter portions on a workpiece, and a spacer layer film forming step for forming a spacer layer on the workpiece, A mask layer film forming step for forming a mask layer on the formed spacer layer, and opening formation for forming a plurality of openings corresponding to a plurality of filter portions and having different aperture ratios in the formed mask layer A step of removing a portion corresponding to the plurality of openings in the spacer layer formed, and a step of removing the filter layer on the workpiece through the mask layer formed with the plurality of openings. And performing a filter layer growth step for vapor phase growth.
  • the partial removal step it is preferable to perform an ashing process or a dry etching process on the spacer layer through a mask layer in which a plurality of openings are formed.
  • the spacer layer is an organic material such as a resist, an ashing process is performed.
  • each opening has the above-described opening ratio by alternately arranging a plurality of shielding portions and openings.
  • the opening width S of the openings in the side-by-side direction is preferably larger than the film thickness D formed unshielded in the filter layer growth step.
  • the “film thickness D deposited without shielding” is “film thickness deposited without a sputtering mask”.
  • the film thickness D is equivalent to the “film thickness formed on the mask layer in the filter layer growth step”.
  • the thickness T of the mask layer formed by the mask layer forming step is not less than one third of the film thickness D formed unshielded in the filter layer growing step, and the openings in the parallel direction are formed.
  • the opening width S or less is preferable.
  • the thickness H of the spacer layer formed by the spacer layer forming step is preferably not less than the formation pitch of openings in the juxtaposed direction and not more than 200 ⁇ m.
  • a hole forming process for forming a hole in the spacer layer, in which the mask layer material enters during the mask layer forming process and the alignment mark is recessed in the mask layer is further executed.
  • the plurality of openings are preferably formed with reference to the recessed alignment mark.
  • the opening forming step it is preferable to form a plurality of openings by a photolithography process.
  • the spectroscope 1 is a non-movable type analyzer that measures an intensity distribution (an electromagnetic wave spectrum of light) in 18 wavelength regions obtained by dividing a visible light region into 18 regions. That is, the light intensity distribution measuring device measures the intensity distribution of the wavelengths of the 18 colors in the incident light (inspection light).
  • the spectroscope 1 deflects incident light 11 having a light shielding structure that forms an incident port 11a, a diffusion plate 12 that diffuses incident light from the incident port 11a, and diffused incident light. Formed on the light guide plate 13, the collimator lens array 14 that converts the deflected incident light into parallel light, the light receiving element array 15 that forms 18 light receiving elements 25 that receive the parallel light, and the 18 light receiving elements 25. And a control unit 17 that measures the intensity distribution of each wavelength based on the output values (photocurrent values) of the 18 light receiving elements 25. .
  • Incident light from the entrance 11 a is diffused by the diffusion plate 12, deflected by the light guide plate 13, and guided to 18 light receiving elements 25 through the collimator lens array 14 and the transmission wavelength variable interference filter 16. .
  • the guided light is converted into a photocurrent value by the light receiving element 25, and the control unit 17 measures the intensity distribution of each wavelength based on each photocurrent value.
  • the light receiving element array 15 includes a photodiode array, and includes a P + substrate 21, a P-EPI layer 22 disposed on the P + substrate 21, and an N-EPI layer formed on the P-EPI layer 22. 23, and a plurality of N + layers 24 formed side by side on the N-EPI layer 23. Accordingly, the light receiving element array 15 constitutes 18 light receiving elements (light receiving portions) 25 for each N + layer 24.
  • Each light receiving element 25 is a photoelectric conversion element that converts received light to obtain a photocurrent value (output value).
  • the transmission wavelength variable interference filter 16 includes a dielectric multilayer film (filter layer) 16a in which a plurality of high refractive materials (for example, TiO 2 ) and low refractive materials (for example, SiO 2 ) are alternately stacked.
  • the dielectric multilayer film 16a is formed so as to increase in thickness in the direction in which the light receiving elements 25 are arranged.
  • the dielectric multilayer film 16a having a different thickness at each position integrally forms 18 filter portions 28 having different transmission peaks. That is, each portion having a different thickness of the dielectric multilayer film 16 a functions as 18 filter portions 28.
  • the 18 filter portions 28 correspond to the 18 light receiving elements 25, respectively, and are formed on the light receiving surfaces of the 18 light receiving elements 25, respectively.
  • the film thickness of the dielectric multilayer film 16 a is formed to be uniform for each filter unit 28, and the surface of each filter unit is parallel to the light receiving surface of each light receiving element 25. Is formed.
  • Each filter unit 28 interferes with light received by each corresponding light receiving element 25 and filters the light with each transmission characteristic. Accordingly, each light receiving element 25 is configured to receive the light filtered by each filter unit 28.
  • the transmission wavelength variable interference filter 16 is formed on the light receiving element array 15 by forming the dielectric multilayer film 16a on the light receiving element array 15 (work).
  • a mask formation step is performed (see FIG. 3B).
  • the sputter mask 30 is formed on the light receiving element array 15 by a fine processing process (semiconductor manufacturing process).
  • the sputter mask 30 includes a mask main body 31 serving as a shielding portion, and a spacer 32 that separates the mask main body 31 from the light receiving element array 15 by a predetermined separation distance.
  • the mask main body 31 includes each filter.
  • a plurality of apertures 33 having different aperture ratios (transmittances) are provided at positions corresponding to the portions 28 (each light receiving element 25). Details of the sputtering mask 30 and the mask forming process will be described later.
  • a multilayer film growth process (filter layer growth process) is performed (see FIG. 3C).
  • the dielectric multilayer film 16a is formed on the light receiving element array 15 by performing a sputtering process through the sputtering mask 30 formed in the mask formation step. That is, in the multilayer film growth step, the dielectric multilayer film 16a is vapor-phase grown on the light receiving element array through the sputtering mask 30 by a sputtering apparatus.
  • the aperture ratios of the openings 33 of the mask body 31 are different, vapor deposition materials are deposited on the light receiving elements 25 with different shielding rates.
  • vapor phase growth materials are formed on the respective light receiving elements 25 with different film thicknesses.
  • a step-like dielectric multilayer film 16a as shown in FIG. 2 is formed on the light receiving element array 15, and 18 filters are formed.
  • the transmission wavelength variable interference filter 16 constituting the unit 28 is formed.
  • a mask removal step is performed (see FIG. 3D).
  • the sputter mask 30 on the light receiving element array 15 is removed (lift-off) with a solution or the like. That is, a later-described mask layer 62 constituting the mask body 31 and a later-described spacer layer 61 constituting the spacer 32 are removed. This completes the manufacturing operation.
  • the sputter mask 30 formed in the mask forming step includes the mask main body 31 serving as a shielding portion and the spacer 32 that separates the mask main body 31 from the light receiving element array 15 by a predetermined distance. .
  • the mask body 31 is made of Si (silicon), and a plurality (18) of aperture ratios are different at positions corresponding to the respective filter portions 28 (each light receiving element 25).
  • the opening 33 is provided.
  • the aperture ratio of each opening becomes the shielding rate of the vapor phase growth material in the multilayer film growth process, thereby adjusting the accumulation amount of the vapor phase growth material at each position of the light receiving element array 15,
  • the film thickness of each filter part 28 is adjusted. With this film thickness control, the transmission characteristics of each filter section on each light receiving element are determined.
  • Each opening portion 33 has the above-described opening ratios by alternately arranging a plurality of shielding portions 41 and openings 42 in parallel.
  • the width L of each shielding part 41 in the juxtaposed direction is fixed at 10 ⁇ m.
  • the opening ratio is configured by adjusting (making different) the opening width S of each opening in the juxtaposed direction.
  • the opening width S of each opening 42 is set to be larger than the film thickness D formed without shielding in the multilayer growth process.
  • the thickness T of the mask body 31 is not less than one-third of the film thickness D formed unshielded in the multilayer film growth step, and not more than the opening width S of the opening 42. That is, the minimum opening width S is set to be equal to or smaller than the plurality of openings 33.
  • the thickness T of the mask body 31 is 1 ⁇ m or more and 10 ⁇ m or less.
  • the spacer 32 is made of a photoresist.
  • the height H of the spacer 32 is not less than the formation pitch (S + L) of the openings 42 in the parallel arrangement direction of the mask body 31 and not more than 200 ⁇ m. That is, the maximum formation pitch (S + L) or more in the plurality of openings 33 is set.
  • the height H of the spacer 32 is not less than 10 ⁇ m and not more than 100 ⁇ m.
  • the height H of the spacer 32 is the above-mentioned separation distance that separates the mask main body 31 from the light receiving element array 15.
  • a hole 51 for forming the alignment mark 34 in the mask body 31 is formed on the surface of the spacer 32.
  • the material of the mask layer 62 penetrates into the hole 51 when a mask layer 62 described later constituting the mask main body 31 is formed.
  • the alignment mark 34 is recessed in the mask layer 62, and the alignment mark 34 is formed in the mask body 31.
  • the spacer layer 61 is formed on the light receiving element array 15 by the exposure apparatus (spacer layer formation step). Specifically, the application of a 15 ⁇ m-thick photoresist (negative type) to the surface of the light receiving element array 15 and the entire exposure to the photoresist are repeated twice (see FIGS. 5B and 5C). ). Thereafter, in order to form the hole 51, a 15 ⁇ m-thick photoresist (negative type) is applied, and then the photoresist is exposed to light using a photomask for forming the hole 51, and then developed. Processing and baking are performed (hole forming step) (see FIG.
  • a spacer layer 61 having a thickness of 40 ⁇ m and a hole 51 is formed.
  • the exposure process using the photomask for forming the hole 51 is performed with reference to an alignment mark (not shown) formed on the light receiving element array 15.
  • the thickness of the spacer layer 61 formed here is the height H of the spacer 32, the thickness of the spacer layer 61 is set to be not less than the formation pitch (S + L) of the openings 42 and not more than 200 ⁇ m. ing.
  • a mask layer 62 is formed on the spacer layer 61 by a sputtering apparatus (mask layer forming step) (see FIG. 5E). That is, by performing a sputtering process on the spacer layer 61, Si is vapor-grown over the entire surface of the spacer layer 61, and a 2 ⁇ m-thick mask layer 62 made of Si is formed. At this time, the vapor phase growth material (Si) enters the hole 51, and the alignment mark 34 is recessed in the mask layer 62. Since the thickness of the mask layer 62 formed here is the thickness T of the mask main body 31, the thickness of the mask layer 62 is the film thickness D formed unshielded in the multilayer growth process. Is set to 1/3 or more and the opening width S or less.
  • the plurality of openings 33 are formed in the mask layer 62 by a photoresist process (opening forming step) (see FIG. 5F). Specifically, after applying a photoresist on the mask layer 62 by an exposure apparatus, an exposure process is performed through a photomask that forms a resist pattern for forming the plurality of openings 33, and then a development process is performed. Do. Thereby, a resist pattern for forming the plurality of openings 33 is formed. Then, after etching is performed through the formed resist pattern by deep reactive ion etching (Deep RIE) using an etching apparatus, the resist pattern is removed with a solution or the like.
  • Deep ion etching Deep reactive ion etching
  • a plurality of openings 33 are formed in the mask layer 62, and the mask body 31 is formed.
  • the exposure process through the photomask for forming the resist pattern is performed with reference to the alignment mark 34 provided in the mask layer 62 as a reference. That is, in this step, a plurality of openings 33 are formed in the mask layer 62 with the alignment mark 34 as a reference.
  • the spacer layer 61 is subjected to an ashing process for a long time (for example, 10 hours or more) through the mask body 31 (see FIG. 5G). .
  • ashing process portions of the spacer layer 61 corresponding to the plurality of openings 33 are removed (partial removal step).
  • a gap is formed between each opening 33 and the light receiving element array 15 (each light receiving element 25).
  • the spacer 32 is formed, and the sputter mask 30 including the mask main body 31 and the spacer 32 is formed.
  • the mask forming process is completed.
  • the dielectric multilayer film 16a is vapor-phase grown on the light receiving element array 15 through the sputter mask 30 thus formed, that is, through the mask layer 62 in which the plurality of openings 33 are formed.
  • a transmission wavelength variable interference filter 16 is formed on the array 15.
  • the manufacturing method according to the second embodiment uses a dry film resist to form the spacer layer 61 in the mask formation step.
  • a dry film resist (negative type) having a thickness of 40 ⁇ m is added on the surface of the light receiving element array 15 ( (Refer FIG.6 (b)). Then, after performing exposure processing using a photomask for forming the hole 51 for an exposure amount that is half the exposure amount for exposing the entire thickness, the entire surface exposure processing is performed for the remaining half exposure amount (FIG. 6). (See (c)). Thereafter, development processing and baking processing are performed (see FIG. 6D). Thereby, the spacer layer 61 in which the hole 51 is formed is formed.
  • the spacer layer film forming process for forming the spacer layer 61, the mask layer film forming process for forming the mask layer 62, and the plurality of openings 33 are formed in the mask layer 62. Since the sputter mask 30 is formed by performing the opening forming step to be performed and the partial removal step of removing the portions corresponding to the plurality of openings 33 of the spacer layer 61, a micro-fabrication process (semiconductor manufacturing) The sputtering mask 30 can be formed by the process. As a result, the sputter mask 30 can be aligned with the light receiving element array 15 in the microfabrication process.
  • the transmission wavelength variable interference filter 16 constituting the plurality of filter portions 28 can be easily and accurately formed.
  • the spacer layer 61 with a photoresist, the partial removal process and the mask removal process can be easily performed.
  • the partial removal process is realized by an ashing process through the mask body 31, thereby making the partial removal process easier. Can be done. That is, gaps between the plurality of openings 33 and the light receiving element array 15 (the plurality of light receiving elements 25) can be easily formed.
  • the dielectric multilayer film 16a can be vapor phase grown without any delay. That is, the film thickness formed unshielded in the multilayer film growth step is “D”, and the film thickness formed on the inner surface of each opening 42 with respect to the film thickness formed unshielded in the multilayer film growth step.
  • the ratio is “c”
  • the thickness of the mask main body 31 (mask layer 62) is set to one third or more of the film thickness D formed unshielded in the multilayer film growth step, and to the opening width S or less of the opening 42.
  • the mask main body 31 is not destroyed by the internal stress of the film formation, and the film thickness of the dielectric multilayer film 16a in each filter portion can be formed uniformly. That is, the height H of the spacer 32 is set to 30 ⁇ m, the opening width S of the opening 42 is set to 10 ⁇ m, the width L of the shielding portion 41 is set to 10 ⁇ m, and the film thickness distribution at the time of non-shielding in the multilayer film growth process is cos 5 ⁇ .
  • a simulation result of the film thickness distribution as shown in FIG. 7A was obtained.
  • the thickness T of the mask body 31 is 10 ⁇ m or less, that is, the opening width S or less of the opening 42, it can be seen that the film thickness of the dielectric multilayer film 16a can be formed uniformly.
  • the mask main body 31 is not destroyed by the internal stress of the film formation, and the film thickness D is not less than one third of the film thickness D formed unshielded in the multilayer film growth process.
  • the mask main body 31 is not destroyed by stress, and the film thickness of the dielectric multilayer film 16a in each filter portion 28 can be formed uniformly.
  • the thickness of the dielectric multilayer film 16a in each filter portion 28 can be made more uniform. Can be formed. That is, the simulation was performed assuming that the height H of the spacer 32 is 30 ⁇ m, the thickness T of the mask body 31 is 0 ⁇ m, and the film thickness distribution at the time of non-shielding in the multilayer film growth process is cos 5 ⁇ . The simulation results of the film thickness distribution as shown in (b) to (d) were obtained.
  • the film thickness of the dielectric multilayer film 16a can be formed uniformly. Therefore, by setting the height H of the spacer 32 to be equal to or greater than the formation pitch (S + L) of the openings 42, the thickness of the dielectric multilayer film 16a in each filter portion 28 can be formed more uniformly. Further, by setting the height H of the spacer 32 to 200 ⁇ m or less, the spacer layer 61 can be formed without any defect using, for example, a dry film resist, and the film thickness of the dielectric multilayer film 16a is formed more uniformly. be able to.
  • the resist pattern is removed when forming the plurality of openings 33, and the spacer layer 61 is partially removed (the part corresponding to the openings 33 is removed).
  • the structure which performs these by integral ashing processing may be sufficient.
  • the mask layer 62 and the spacer layer 61 are removed in the mask removal process. However, in the mask removal process, only the mask layer 62 out of the mask layer 62 and the spacer layer 61 is removed. The structure which removes and leaves the spacer layer 61 may be sufficient.
  • the dielectric multilayer film 16a is vapor-phase grown by sputtering in the multilayer film growth step.
  • the dielectric multilayer film 16a is vapor-grown by vapor deposition. It may be.
  • the spacer layer 61 is partially removed (removal of the portion corresponding to the opening 33) by ashing through the mask body 31.
  • a configuration in which the spacer layer 61 is partially removed by a dry etching process through the mask body 31 may be employed.
  • the dielectric multilayer film 16a is formed so as to increase in thickness in the direction in which the light receiving elements 25 are arranged. That is, the thickness of each filter portion 28 is increased in the arrangement order, but the thickness is not limited to this as long as the thickness of each filter portion 28 is uniform.
  • FIG. 8A a configuration may be adopted in which the order of arrangement is ignored and the film thickness of an arbitrary filter section 28 is set to an arbitrary thickness. That is, the filter part 28 of each desired transmission characteristic may be formed in random order.
  • the dielectric multilayer film 16a may be formed so as to gradually increase in thickness in the direction in which the light receiving elements 25 are arranged by the above manufacturing operation.
  • positions the several light receiving element 25 side by side it is not restricted to this.
  • positions the some light receiving element 25 in matrix form may be sufficient.
  • FIG. 9B a configuration in which a plurality of light receiving elements 25 are arranged in a ring shape may be employed.
  • the dielectric multilayer film 16a is formed in accordance with the arrangement of the plurality of light receiving elements 25. That is, the plurality of filter portions 28 are formed in a matrix or in a ring shape in accordance with the arrangement of the plurality of light receiving elements 25. Therefore, the plurality of openings 33 of the mask main body 31 are configured to be arranged in a matrix or an annular shape.
  • the light receiving element array 15 is used as a work, and the transmission wavelength variable interference filter 16 is formed on the light receiving element array 15.
  • the present invention is not limited to this.
  • work may be sufficient.
  • the present invention is applied to the method for manufacturing the transmission wavelength variable interference filter 16, but any method for manufacturing another optical filter can be used as long as it is a method for manufacturing an optical filter having a plurality of filter portions 28.
  • the present invention may be applied to.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Filters (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention vise à fournir un procédé de fabrication de filtre optique, par lequel un masque de pulvérisation peut être aligné facilement et précisément avec une pièce à usiner, et un filtre optique constituant une pluralité de sections de filtre peut être formé facilement et précisément. La présente invention est caractérisée par le fait de réaliser : une étape de formation de film de couche d'espacement pour la formation d'un film d'une couche d'espacement (61) sur une matrice d'éléments récepteurs de lumière (15) ; une étape de formation de film de couche de masque pour la formation d'un film d'une couche de masque (62) sur la couche d'espacement (61) ; une étape de formation d'ouverture consistant à former une pluralité d'ouvertures (33) dans la couche de masque (62) ; une étape de retrait de partie consistant à retirer des parties de couche d'espacement (61) correspondant aux ouvertures (33) ; et une étape de croissance de film multicouche pour la croissance en phase vapeur d'un film multicouche diélectrique (16a) sur la matrice d'éléments récepteurs de lumière (15) par l'intermédiaire de la couche de masque (62).
PCT/JP2014/081955 2014-12-03 2014-12-03 Procédé de fabrication de filtre optique WO2016088216A1 (fr)

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PCT/JP2014/081955 WO2016088216A1 (fr) 2014-12-03 2014-12-03 Procédé de fabrication de filtre optique
JP2016562139A JPWO2016088216A1 (ja) 2014-12-03 2014-12-03 光学フィルターの製造方法

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN111916467A (zh) * 2019-05-10 2020-11-10 采钰科技股份有限公司 滤光结构

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JP2005505928A (ja) * 2001-10-10 2005-02-24 ハネウェル・インターナショナル・インコーポレイテッド 肉厚漸変光学素子およびその製造方法
JP2007201499A (ja) * 2007-04-06 2007-08-09 Denso Corp 半導体基板およびその製造方法
JP2008053272A (ja) * 2006-08-22 2008-03-06 Nippon Telegr & Teleph Corp <Ntt> 薄膜素子の製造方法
JP2013110173A (ja) * 2011-11-18 2013-06-06 Dainippon Printing Co Ltd 反射型マスクブランクス、反射型マスク、および、それらの製造方法、並びに、反射型マスクブランクスの検査方法
WO2014033784A1 (fr) * 2012-08-30 2014-03-06 パイオニア株式会社 Procédé de fabrication de filtre optique

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005505928A (ja) * 2001-10-10 2005-02-24 ハネウェル・インターナショナル・インコーポレイテッド 肉厚漸変光学素子およびその製造方法
JP2008053272A (ja) * 2006-08-22 2008-03-06 Nippon Telegr & Teleph Corp <Ntt> 薄膜素子の製造方法
JP2007201499A (ja) * 2007-04-06 2007-08-09 Denso Corp 半導体基板およびその製造方法
JP2013110173A (ja) * 2011-11-18 2013-06-06 Dainippon Printing Co Ltd 反射型マスクブランクス、反射型マスク、および、それらの製造方法、並びに、反射型マスクブランクスの検査方法
WO2014033784A1 (fr) * 2012-08-30 2014-03-06 パイオニア株式会社 Procédé de fabrication de filtre optique

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916467A (zh) * 2019-05-10 2020-11-10 采钰科技股份有限公司 滤光结构
JP2020187339A (ja) * 2019-05-10 2020-11-19 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ 光フィルタ構造
US11081600B2 (en) 2019-05-10 2021-08-03 Visera Technologies Company Limited Light filter structure

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