JP2020187339A - 光フィルタ構造 - Google Patents
光フィルタ構造 Download PDFInfo
- Publication number
- JP2020187339A JP2020187339A JP2019172851A JP2019172851A JP2020187339A JP 2020187339 A JP2020187339 A JP 2020187339A JP 2019172851 A JP2019172851 A JP 2019172851A JP 2019172851 A JP2019172851 A JP 2019172851A JP 2020187339 A JP2020187339 A JP 2020187339A
- Authority
- JP
- Japan
- Prior art keywords
- wedge
- shaped portion
- optical filter
- layer
- filter structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 67
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 8
- 239000000976 ink Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000012778 molding material Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WVMYSOZCZHQCSG-UHFFFAOYSA-N bis(sulfanylidene)zirconium Chemical compound S=[Zr]=S WVMYSOZCZHQCSG-UHFFFAOYSA-N 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
光フィルタ構造は、複数の光電変換素子を有する基板を含む。光フィルタ構造は、基板の上に配置された誘電体スタック層も含む。光フィルタ構造は、誘電体スタック層の上に配置された平坦化層を更に含む。誘電体スタック層は、くさび形状部、およびくさび形状部に隣接する平坦化部を有し、くさび形状部は、連続的または非連続的に変化する厚さを有し、平坦化部は実質的に一定の厚さを有する。
10 基板
10T 上面
12、12C、12P、12F 光電変換素子
20、22、24、26 誘電体スタック層
20−1、22−1、24−1、26−1 くさび形状部
20−2、22−2、24−2、26−2 くさび形状部
20−3、22−3、24−3、26−3 平坦化部
21 第1の誘電体層
23 第2の誘電体層
30 平坦化層
40 遮光層
41 第1の遮光層
41a 第1の開口
43 第2の遮光層
43a 第2の開口
D1 方向
L 光
W1 幅
W2 幅
α 入射角
Claims (11)
- 複数の光電変換素子を有する基板、
前記基板の上に配置された誘電体スタック層、および
前記誘電体スタック層の上に配置された平坦化層を含み、
前記誘電体スタック層は、くさび形状部、および前記くさび形状部に隣接する平坦化部を有し、前記くさび形状部は、連続的または非連続的に変化する厚さを有し、前記平坦化部は実質的に一定の厚さを有する光フィルタ構造。 - 前記誘電体スタック層は、交互に積層された複数の第1の誘電体層および複数の第2の誘電体層を含み、各前記第1の誘電体層の屈折率は、各前記第2の誘電体層の屈折率と異なり、前記くさび形状部の各前記第1の誘電体層は、連続的または非連続的に変化する厚さを有し、前記くさび形状部の各前記第2の誘電体層は、連続的または非連続的に変化する厚さを有する請求項1に記載の光フィルタ構造。
- 各前記第1の誘電体層の屈折率は、2から2.5の間であり、各前記第1の誘電体層の材料は、二酸化ジルコニウム(ZrO2)、五酸化タンタル(Ta2O5)、五酸化ニオブ(Nb2O5)、硫化亜鉛(ZnS)、二酸化チタン(TiO2)、酸化インジウム錫(ITO)、酸化錫(SnO2)、または酸化亜鉛(ZnO)を含む請求項2に記載の光フィルタ構造。
- 各前記第2の誘電体層の屈折率は1.2から1.8の間であり、各前記第2の誘電体層の材料はフッ化カルシウム(CaF2)、フッ化マグネシウム(MgF2)、三フッ化ランタン(LaF3)、二酸化ケイ素(SiO2)、酸化アルミニウム(Al2O3)、または二酸化ハフニウム(HfO2)を含む請求項2に記載の光フィルタ構造。
- 前記くさび形状部は前記平坦化部を囲み、前記くさび形状部は、前記平坦化部に近い側から前記平坦化部から遠い側に徐々に薄くなる請求項2に記載の光フィルタ構造。
- 前記くさび形状部は前記平坦化部を囲み、前記くさび形状部は、前記平坦化部に近い側から前記平坦化部から遠い側に徐々に厚くなる請求項2に記載の光フィルタ構造。
- 前記平坦化層の上に配置された第1の遮光層、および
平坦化層内、および誘電体スタック層の上に配置された少なくとも1つの第2の遮光層を更に含む請求項1に記載の光フィルタ構造。 - 前記第1の遮光層は、複数の第1の開口を含み、前記少なくとも1つの第2の遮光層は、前記複数の第1の開口に対応する複数の第2の開口を含み、各前記複数の第1の開口は、前記複数の光電変換素子の中の1つに対応し、各前記複数の第2の開口は、前記複数の光電変換素子の中の1つに対応する請求項7に記載の光フィルタ構造。
- 前記基板の上面と平行な方向にある各前記複数の第1の開口の幅は、1μmより大きく150μmより小さく、前記基板の上面と平行な方向にある各前記複数の第2の開口の幅は、1μmより大きく150μmより小さく、各前記複数の第1の開口の幅は、各前記複数の第2の開口の幅と異なり、前記複数の第1の開口および前記複数の第2の開口は、光の入射角を0〜10°に制限する請求項8に記載の光フィルタ構造。
- 前記複数の第1の開口は対称的なパターンを形成する請求項9に記載の光フィルタ構造。
- 前記複数の第1の開口は、同心円状に配置される請求項10に記載の光フィルタ構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/408823 | 2019-05-10 | ||
US16/408,823 US11081600B2 (en) | 2019-05-10 | 2019-05-10 | Light filter structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020187339A true JP2020187339A (ja) | 2020-11-19 |
JP6852134B2 JP6852134B2 (ja) | 2021-03-31 |
Family
ID=73046501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019172851A Active JP6852134B2 (ja) | 2019-05-10 | 2019-09-24 | 光フィルタ構造 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11081600B2 (ja) |
JP (1) | JP6852134B2 (ja) |
CN (1) | CN111916467A (ja) |
TW (1) | TWI757644B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI808414B (zh) * | 2021-03-03 | 2023-07-11 | 台灣積體電路製造股份有限公司 | 影像感測器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62267623A (ja) * | 1986-05-15 | 1987-11-20 | Minolta Camera Co Ltd | 分光測定センサ |
JP2005277404A (ja) * | 2004-02-24 | 2005-10-06 | Sanyo Electric Co Ltd | 固体撮像素子及び固体撮像素子の製造方法 |
JP2013044537A (ja) * | 2011-08-22 | 2013-03-04 | Seiko Epson Corp | 光学センサー及び電子機器 |
JP2015213144A (ja) * | 2014-05-01 | 2015-11-26 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | ソリッドステート撮像装置 |
WO2016088216A1 (ja) * | 2014-12-03 | 2016-06-09 | パイオニア株式会社 | 光学フィルターの製造方法 |
JP2018116150A (ja) * | 2017-01-18 | 2018-07-26 | 株式会社ニコン | 分光素子、固体撮像素子および分光素子の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551922B1 (en) * | 2002-03-06 | 2003-04-22 | Motorola, Inc. | Method for making a semiconductor device by variable chemical mechanical polish downforce |
US20070058055A1 (en) * | 2003-08-01 | 2007-03-15 | Takumi Yamaguchi | Solid-state imaging device, manufacturing method for solid-state imaging device, and camera using the same |
US8058125B1 (en) * | 2010-08-04 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Poly resistor on a semiconductor device |
WO2013062059A1 (ja) * | 2011-10-26 | 2013-05-02 | 大日本印刷株式会社 | 有機エレクトロルミネッセンス表示装置用カラーフィルタおよび有機エレクトロルミネッセンス表示装置 |
US9448346B2 (en) * | 2012-12-19 | 2016-09-20 | Viavi Solutions Inc. | Sensor device including one or more metal-dielectric optical filters |
JP6314451B2 (ja) * | 2012-12-27 | 2018-04-25 | 大日本印刷株式会社 | カラーフィルタ形成基板および有機el表示装置 |
TWI700518B (zh) | 2014-06-18 | 2020-08-01 | 美商唯亞威方案公司 | 金屬介電光學濾光器、感測器裝置及製造方法 |
US9818880B2 (en) * | 2015-02-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
JP2017168822A (ja) * | 2016-02-12 | 2017-09-21 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | センサデバイスの製造方法 |
-
2019
- 2019-05-10 US US16/408,823 patent/US11081600B2/en active Active
- 2019-09-24 JP JP2019172851A patent/JP6852134B2/ja active Active
- 2019-10-08 TW TW108136358A patent/TWI757644B/zh active
- 2019-10-25 CN CN201911022471.1A patent/CN111916467A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62267623A (ja) * | 1986-05-15 | 1987-11-20 | Minolta Camera Co Ltd | 分光測定センサ |
JP2005277404A (ja) * | 2004-02-24 | 2005-10-06 | Sanyo Electric Co Ltd | 固体撮像素子及び固体撮像素子の製造方法 |
JP2013044537A (ja) * | 2011-08-22 | 2013-03-04 | Seiko Epson Corp | 光学センサー及び電子機器 |
JP2015213144A (ja) * | 2014-05-01 | 2015-11-26 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | ソリッドステート撮像装置 |
WO2016088216A1 (ja) * | 2014-12-03 | 2016-06-09 | パイオニア株式会社 | 光学フィルターの製造方法 |
JP2018116150A (ja) * | 2017-01-18 | 2018-07-26 | 株式会社ニコン | 分光素子、固体撮像素子および分光素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20200357935A1 (en) | 2020-11-12 |
JP6852134B2 (ja) | 2021-03-31 |
CN111916467A (zh) | 2020-11-10 |
TW202042384A (zh) | 2020-11-16 |
TWI757644B (zh) | 2022-03-11 |
US11081600B2 (en) | 2021-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9117717B2 (en) | Solid-state image pickup device having a multilayer interference filter including an upper laminated structure, a control structure and lower laminated structure | |
TWI654749B (zh) | 具有一或多個金屬介電光學濾光器之感測器裝置 | |
US7768088B2 (en) | Solid-state imaging device that efficiently guides light to a light-receiving part | |
KR20200099832A (ko) | 다층 메타 렌즈 및 이를 포함하는 광학 장치 | |
US8461659B2 (en) | Solid state imaging apparatus | |
US8823123B2 (en) | Solid-state image sensor | |
JP2021015732A (ja) | 表示装置および表示システム | |
JP2007318002A (ja) | 固体撮像装置及びその製造方法 | |
US20190157332A1 (en) | Back-side Illumination CMOS Image Sensor and Forming Method Thereof | |
WO2020122032A1 (ja) | 固体撮像素子及び固体撮像素子の製造方法 | |
EP1620353A1 (en) | Anti-reflective sub-wavelengh structures for silicon wafers | |
JP6852134B2 (ja) | 光フィルタ構造 | |
US9583522B2 (en) | Image sensor and electronic device including the same | |
JP2006121065A (ja) | 固体撮像素子 | |
US20220155504A1 (en) | Optical structure | |
JP6895494B2 (ja) | 光フィルター構造 | |
JP2021077881A (ja) | イメージセンサー | |
JP2005026567A (ja) | 固体撮像装置およびその製造方法 | |
TWI840126B (zh) | 光學裝置 | |
EP4242702A1 (en) | Optical element, imaging element, and imaging device | |
US20240055455A1 (en) | Image sensor, and electronic device comprising the image sensor | |
JP2018005230A (ja) | 光学フィルタ、表示装置、撮像素子、および、光学フィルタの製造方法 | |
EP3686931B1 (en) | Image sensor and manufacturing method therefor | |
JP2022032676A (ja) | 固体撮像素子及び固体撮像素子の製造方法 | |
JP2006237362A (ja) | 固体撮像素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190924 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200918 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201020 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210302 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210310 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6852134 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |