WO2016084730A1 - Élément semi-conducteur organique et son procédé de production, composition semi-conductrice organique, film semi-conducteur organique, composé et oligomère ou polymère - Google Patents

Élément semi-conducteur organique et son procédé de production, composition semi-conductrice organique, film semi-conducteur organique, composé et oligomère ou polymère Download PDF

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WO2016084730A1
WO2016084730A1 PCT/JP2015/082667 JP2015082667W WO2016084730A1 WO 2016084730 A1 WO2016084730 A1 WO 2016084730A1 JP 2015082667 W JP2015082667 W JP 2015082667W WO 2016084730 A1 WO2016084730 A1 WO 2016084730A1
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formula
group
organic semiconductor
represented
divalent linking
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PCT/JP2015/082667
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English (en)
Japanese (ja)
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友樹 平井
健介 益居
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富士フイルム株式会社
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Priority to EP15862559.0A priority Critical patent/EP3208273B1/fr
Priority to JP2016561552A priority patent/JP6337141B2/ja
Publication of WO2016084730A1 publication Critical patent/WO2016084730A1/fr
Priority to US15/593,337 priority patent/US9954172B2/en

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    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Abstract

La présente invention concerne un élément semi-conducteur organique qui présente une excellente résistance à la chaleur et qui comprend une couche active semi-conductrice qui présente une excellente mobilité des porteurs de charge, une composition semi-conductrice organique qui comprend l'élément semi-conducteur organique doté de celle-ci, un film semi-conducteur organique qui utilise la composition, et un procédé de production d'élément semi-conducteur organique. La présente invention concerne également un composé qui peut être utilisé de manière appropriée dans l'élément semi-conducteur organique, dans la composition semi-conductrice organique, dans le film semi-conducteur organique et dans le procédé de production d'élément à semi-conducteur organique, et un oligomère ou un polymère. Cet élément semi-conducteur organique est caractérisé en ce qu'il comprend, dans sa couche active semi-conductrice, un composé qui est représenté par la formule 1. Dans la formule 1, X représente un atome de chalcogène, p et q représentent chacun indépendamment un nombre entier de 0 à 2, et R1 et R2 représentent chacun indépendamment un atome d'halogène ou un groupe représenté par la formule W. (W) -S-L-T.
PCT/JP2015/082667 2014-11-25 2015-11-20 Élément semi-conducteur organique et son procédé de production, composition semi-conductrice organique, film semi-conducteur organique, composé et oligomère ou polymère WO2016084730A1 (fr)

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EP15862559.0A EP3208273B1 (fr) 2014-11-25 2015-11-20 Élément semi-conducteur organique et son procédé de production, composition semi-conductrice organique, film semi-conducteur organique, composé et oligomère ou polymère
JP2016561552A JP6337141B2 (ja) 2014-11-25 2015-11-20 有機半導体素子及びその製造方法、有機半導体組成物、有機半導体膜、化合物、並びに、オリゴマー又はポリマー
US15/593,337 US9954172B2 (en) 2014-11-25 2017-05-12 Organic semiconductor element, manufacturing method thereof, organic semiconductor composition, organic semiconductor film, compound, and oligomer or polymer

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EP3208273A1 (fr) 2017-08-23
EP3208273B1 (fr) 2019-07-10
JPWO2016084730A1 (ja) 2017-07-06
US20170250345A1 (en) 2017-08-31
US9954172B2 (en) 2018-04-24
EP3208273A4 (fr) 2017-08-23

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