Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
  • H01G9/052—Sintered electrodes
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
  • B22F3/10—Sintering only
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
  • B22F7/008—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression characterised by the composition
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F27—FURNACES; KILNS; OVENS; RETORTS
  • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
  • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
  • F27B7/20—Details, accessories or equipment specially adapted for rotary-drum furnaces
  • F27B7/32—Arrangement of devices for charging
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F27—FURNACES; KILNS; OVENS; RETORTS
  • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
  • F27D3/00—Charging; Discharging; Manipulation of charge
  • F27D3/0033—Charging; Discharging; Manipulation of charge charging of particulate material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/0029—Processes of manufacture
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
  • B22F2998/10—Processes characterised by the sequence of their steps
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/04—Electrodes or formation of dielectric layers thereon
  • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material

Definitions

• the invention relates to a charging device which comprises at least one region of Ta or a Ta alloy with a Ta content> 90% by mass, and to a process for the production thereof.
• Tantalum (Ta) is used, for example, in the field of chemical apparatus engineering and for high-temperature furnaces.
• Ta is used in so-called Ta electrolytic capacitors.
• a Ta electrolytic capacitor has an electrode body made of Ta, which is uniformly covered by anodic oxidation with a dielectric layer of tantalum pentoxide.
• Ta powder is mixed with a binder and then pressed around a Ta wire into a round or block-shaped block. This block is sintered at high temperatures.
• the powder particles are electrically connected. Sintering typically occurs at temperatures between 1,300 ° C and 2,000 ° C in charging devices such as Ta containers or plates.
• the container has a low wall height, it is referred to as a cup (for example batching cup or sintered cup).
• the charging device is made of Ta to avoid cross-contamination. Cross-contamination is understood in particular to be the diffusion of constituents of the charging device into the material to be annealed (for example in the Ta condenser). The sintering of Ta capacitors is for example in the
• a disadvantage of charging devices from Ta is the low high temperature or
• microallocated Ta for example with
• Yttrium (Y) or silicon (Si) the high temperature dimensional stability is not improved.
• the aim of the subject invention is therefore to provide a charging device which has both a high strength, in particular a high hot and creep resistance, and which further does not contaminate the Ta capacitor.
• Another object of the invention is to provide a method of manufacturing a charging device having the aforementioned characteristics.
• the charging device comprises at least one region A of Ta or a Ta alloy with a Ta content> 90 Ma%, preferably> 95 Ma% and at least one region B of molybdenum (Mo), a Mo alloy with Mo> 90 Ma %, preferably> 95 Ma%, tungsten (W), a W alloy with W> 90 Ma%, preferably> 95 Ma% or a Mo-W alloy with a sum content Mo + W> 90 Ma%, preferably> 95 Ma%.
• Mo molybdenum
• the charging device consists of at least one region A and at least one region B.
• the area B is as mentioned from Mo, a Mo alloy with
• Mo-W alloy produced with a sum Mo + W> 90 Ma%.
• Advantageous Mo alloys are, for example, Mo - 0.1 to 2% by mass of rare earth oxide.
• a particularly advantageous rare earth oxide is La 2 O 3 . After an annealing treatment or during use, these alloys form a coarse-grained, directional stacked crystal structure, which exhibits excellent creep resistance, especially at temperatures> 1300 ° C.
• Mo alloys are TZM and MHC.
• TZM is alloyed with titanium (Ti), zirconium (Zr) and carbon (C). Typical Ti values are about 0.3 to 0.7 Ma%, typical Zr values are 0.05 to 0.1 Ma% and typical C values are 0.01 to 0.04 Ma%.
• MHC is alloyed with hafnium (Hf) and C, with typical Hf values of 1 to 1, 4 Ma% and typical C values of 0.05 to 0.15 Ma%.
• advantageous tungsten alloys are AKS tungsten, which typically contains 0.004 to 0.01 Ma% potassium (K), W-La 2 O 3 with typically 1 to 2 Ma% La 2 O 3 and W-Ce 2 O 3
• Mo-W alloys can be used advantageously, in which case the Mo or W content can be advantageously selected between 5 and 95%.
• the region A is made of pure Ta or a Ta alloy with a
• Pure Ta in the context of this invention means Ta with a technical purity, the typical Ta content being about 99.5 to 99.995 Ma%.
• Ta alloys may advantageously contain from 0.001 to 10 mass% of one or more components selected from the group of oxides, carbides, nitrides, W, Mo and niobium (Nb). W, Mo and Nb are advantageously present not in dissolved form, but as discrete grains, which reduces the outdiffusion.
• the region A and the region B are positively and / or materially connected.
• Positive connections are characterized in that the connection partners also without or at interrupted
• the area A is positively connected to the area B (for example, by a mechanical
• the layers arranged on the outside consist of the region A and the center layer of the region B.
• the region A can be applied to the region B by a thermal spraying process.
• the thermal spraying processes include molten bath spraying, arc spraying, plasma spraying,
• Coating material is not melted and no process-related oxidation takes place.
• the grains of the layer are at least partially cold-formed and characterized by a comparatively high (compared to other thermal spraying) high hardness.
• the CGS applies powder particles with very high kinetic and low thermal energy to a substrate.
• a high-pressure process gas for example nitrogen (N 2 ), air, helium (He) or mixtures thereof, by means of a convergent-divergent nozzle (also called a supersonic nozzle), relaxes.
• a typical nozzle shape represents The Laval nozzle (also called the De Laval nozzle).
• gas velocities of, for example, 900 m / s at N 2 to 2,500 m / s at He can be achieved.
• the coating material pure Ta or a Ta alloy with a Ta content> 90% by mass
• the gas in front of the convergent divergent nozzle can be heated
• Ta alloys with a Ta content> 90 Ma% to dense, splatter well adhering layers The layer structure is carried out in layers from the individual Ta or Ta alloy particles.
• the composite material thus produced now has areas with different functional properties.
• the area B ensures a high
• the coating (area A) of Ta or the Ta alloy is advantageously applied where in use contact with the annealing or
• Sintered material for example, the Ta capacitors exists. This can be reliably avoided that the Ta capacitors are contaminated by elements of the charging device.
• the charging device according to the invention also remains at high
• the coating of Ta or the Ta alloy has a layer thickness of
• the Ta layer thickness can be set accurately and reliably. Thus, it is possible to provide the higher-stressed areas of the charging device with a thicker Ta layer.
• the charging device is designed as a container or plate.
• the container preferably has at least partially the region A on the inside. Since only the inside of the container with the Glühgut (for example Ta capacitors) comes into contact, contamination of the Glühguts can be reliably avoided.
• the outside of the container can advantageously be formed from region B, since this region is not in contact with the annealed material. The region B ensures a high dimensional stability of the container.
• the container at least partially on the outside and inside the area A. Between the A areas, the area B is at least partially arranged.
• the center position from area B in turn ensures the high dimensional stability of the container.
• the container is designed as a cup.
• Under cup is understood to mean a container in which the cylindrical side portion is designed with low height.
• the container or cup in the center region has a sleeve which serves as a charging support device.
• the charging device according to the invention can be used in a high-temperature furnace.
• Under high-temperature furnace is understood to mean a furnace which is operated at temperatures> 1000 ° C.
• the inventive task is also fulfilled by a method for producing a charging device.
• the method comprises at least the following steps: Provision of a base body comprising at least one region B of Mo, a Mo alloy with Mo> 90 Ma%, preferably> 95 Ma%, W, a W alloy with W> 90 Ma %, preferably> 95 Ma% or a Mo-W alloy having a sum content Mo + W> 90 Ma%, preferably> 95 Ma%,
• the process is preferably used for producing a charging device having at least one of the following properties:
• the area A and the area B are form-fitting and / or
• Area A and area B form a layer composite.
• the layer composite has the layer sequence area A / area B /
• the charging device is a container or a plate.
• the container consists on the inside at least partially from the area A.
• the container is on the outside at least partially from the area B and on the inside at least partially from the area A.
• the container is on the outside at least partially from the area B and on the inside at least partially from the area A.
• the container is on the outside and inside at least partially from the area A. Between the layers of the area A, a layer of area B is arranged.
• the container is designed as a cup.
• the area B consists of Mo, Mo - 0.1 to 2 Ma% La 2 03, TZM or MHC.
• the area A consists of pure Ta.
• the area A lies as a sprayed layer and the area B as
• the coating material is typically accelerated to a speed of 300 to 800 m / s.
• the process gas is heated in front of the convergent divergent nozzle, whereby upon expansion of the gas in the nozzle
• Particle velocity can be increased.
• Ta alloys which contain 0.001 to 10% by mass of one or more components selected from the group of oxides, carbides, nitrides, W, Mo and niobium (Nb) can preferably also be prepared on account of the low process temperatures.
• W, Mo and Nb are present as discrete grains in the Ta matrix after the injection process.
• the hard ceramic or metallic (for example W and Mo) constituents have a favorable effect on the layer density, since when the hard particles strike the already deposited layer constituents are further compressed. By storing these components can also warm or
• Creep resistance of the Ta layer can be increased. It is advantageous if the ceramic constituents have a melting point> 1300 ° C., more preferably> 1800 ° C.
• the spray distance in the CGS is preferably 20 to 60 mm, particularly preferably 30 to 50 mm.
• the desired layer thickness is set by an appropriate selection of the number of spraying passes.
• the region B advantageously consists of a deformed material, as a result, high hot and creep resistance can be achieved.
• the rolling is mentioned.
• the deformed material is therefore advantageously a rolled plate or a rolled sheet.
• the plate or the sheet is advantageously further processed by a horrsames process to a molding (for example, container or cup).
• the charging device is designed as a cup, which is used for a thermal treatment of cup-charged components (for example, Ta capacitors).
• the cup is made in one piece and has a cup bottom and a cup rim.
• a Mo sleeve is centrally connected to the cup bottom.
• the cup has an outer diameter of 178 mm and a rim height of 17 mm.
• a deformed (sheet-like starting material) Mo-0.7 Ma% La 2 0 3 alloy is used in the recrystallized state, which is further processed by a conventional molding process to the cup.
• the inside of the cup and the outside of the sleeve are coated with pure Ta by CGS and then joined together.
• the coating material is Ta powder with a mean laser-optically measured
• Particle diameter dso used by 26.4 pm.
• the following coating parameters are used:
• the sleeve After coating the sleeve outside and cups inside the sleeve is connected to the cup base. For this purpose, the sleeve is inserted into a central opening in the bottom of the cup and connected by a grain. The graining deforms the sleeve and the bottom of the cup so that a rivet-like connection is produced.
• the cup according to the invention is used in a sintering furnace for Ta capacitors. At the coming sintering temperature of 1,450 ° C can no
• Contamination of the Ta capacitors can be determined analytically by the material of the body. Even after repeated cycling, the charging device according to the invention has no deformation.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Mechanical Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• General Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Composite Materials (AREA)
• Chemical & Material Sciences (AREA)
• Powder Metallurgy (AREA)
• Furnace Charging Or Discharging (AREA)
• Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
• Other Surface Treatments For Metallic Materials (AREA)
• Electrostatic Charge, Transfer And Separation In Electrography (AREA)
• Silicon Compounds (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

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Citations (7)

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• 2015
  • 2015-11-18 MX MX2017006590A patent/MX389368B/es unknown
  • 2015-11-18 WO PCT/AT2015/000145 patent/WO2016077853A1/de not_active Ceased
  • 2015-11-18 EP EP15825902.8A patent/EP3221874B1/de active Active
  • 2015-11-18 JP JP2017527343A patent/JP6576449B2/ja active Active
• 2017
  • 2017-05-18 IL IL252376A patent/IL252376A0/en active IP Right Grant

Patent Citations (7)

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