WO2016065799A1 - 掩模板及其制造方法、利用掩模板构图的方法 - Google Patents

掩模板及其制造方法、利用掩模板构图的方法 Download PDF

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Publication number
WO2016065799A1
WO2016065799A1 PCT/CN2015/074301 CN2015074301W WO2016065799A1 WO 2016065799 A1 WO2016065799 A1 WO 2016065799A1 CN 2015074301 W CN2015074301 W CN 2015074301W WO 2016065799 A1 WO2016065799 A1 WO 2016065799A1
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Prior art keywords
mask pattern
substrate
mask
liquid crystal
transparent conductive
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PCT/CN2015/074301
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English (en)
French (fr)
Inventor
史大为
刘红亮
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to KR1020177010519A priority Critical patent/KR101978744B1/ko
Priority to US14/769,713 priority patent/US9488917B2/en
Priority to JP2017542238A priority patent/JP6567681B2/ja
Priority to KR1020157023445A priority patent/KR101729674B1/ko
Priority to EP15748156.5A priority patent/EP3214495B1/en
Publication of WO2016065799A1 publication Critical patent/WO2016065799A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
    • G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/62—Switchable arrangements whereby the element being usually not switchable

Definitions

  • Embodiments of the present invention relate to a mask sheet, a method of fabricating the same, and a method of patterning using a mask.
  • the mask pattern of the conventional mask has a difference in the linear density in each region, for example, the line density of the mask pattern corresponding to the fanout wiring (sector wiring) region of the scanning line (the wiring density with the fanout wiring region) Consistently) is generally relatively large (or the light-transmissive gap in the mask pattern is relatively small), while the line density of the mask pattern corresponding to the pixel region is relatively small (or in the mask pattern) The light transmission gap is relatively large).
  • the difference in line density causes a difference in the transmittance of light in different regions (for example, the transmittance of light in a densely patterned region). Lower), which makes the exposure dose required for the region with a large linear density larger, and thus the ideal size after exposure and development in different regions is difficult to ensure at the same time, which is disadvantageous for the simplification of the mask process.
  • Embodiments of the present invention provide a mask comprising: a first substrate and a second substrate disposed opposite to each other; a liquid crystal layer between the first substrate and the second substrate; formed on the first substrate a transparent conductive layer on the same side of the first substrate; and a mask pattern formed on the second substrate by an opaque conductive material, wherein the mask The pattern and the transparent electrode are configured to generate an electric field therebetween to drive deflection of liquid crystal molecules within the liquid crystal layer.
  • An embodiment of the present invention further provides a method of manufacturing a mask, comprising: forming a transparent conductive layer on a first substrate; forming a mask pattern on the second substrate, the forming material of the mask pattern including opacity a conductive material; aligning the first substrate with the second substrate into a box, and forming a liquid crystal layer between the first substrate and the second substrate, the transparent conductive layer being located with the liquid crystal layer The same side of the first substrate; forming an electrical connection between the pressure supply unit and the transparent conductive layer, and between the pressure supply unit and the mask pattern, the pressure supply unit being configured to face the cover
  • the mold pattern and the transparent conductive layer provide a predetermined voltage to generate an electric field to drive deflection of liquid crystal molecules within the liquid crystal layer.
  • Embodiments of the present invention further provide a method of patterning using a mask, wherein the mask is the mask described above, the method comprising: the transparent pattern is applied to the mask pattern by the voltage supply unit The layer provides a predetermined voltage to generate an electric field therebetween to drive deflection of liquid crystal molecules in the liquid crystal layer; illuminating the first substrate to sequentially pass a portion of the light through the first substrate, the transparent conductive layer, The liquid crystal layer and the second substrate are emitted from a region other than the mask pattern on the second substrate.
  • FIG. 1 is a schematic structural view of a mask in an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the working principle of a mask in an embodiment of the present invention.
  • the orientation or positional relationship of the terms “upper”, “lower” and the like is based on the orientation or positional relationship shown in the drawings, for convenience of description of the embodiments of the present invention and simplified description. It is not intended to be a limitation or limitation of the invention.
  • the terms “mounted,” “connected,” and “connected” are used in a broad sense, and may be, for example, a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, It can also be an electrical connection; it can be directly connected, or it can be connected indirectly through an intermediate medium, which can be the internal connection of two components.
  • Embodiments of the present invention provide a mask, a method for fabricating the same, and a method for patterning using a mask to solve the problem that the difference in exposure dose between different linear density regions is too large, and the size after exposure and development cannot be controlled.
  • FIG. 1 shows the structure of a mask in one embodiment of the present invention, wherein the upper half of FIG. 1 shows the cross-sectional structure of the mask, and the lower half of FIG. 1 shows the bottom view of the mask. a part of.
  • the mask includes:
  • first substrate 101 and second substrate 102 Oppositely disposed first substrate 101 and second substrate 102;
  • liquid crystal layer 103 between the first substrate 101 and the second substrate 102;
  • a transparent conductive layer 104 formed on the first substrate 101, the transparent conductive layer 104 and the liquid crystal layer 103 being located on the same side of the first substrate 101;
  • a mask pattern 105 formed on the second substrate 102 is formed of an opaque conductive material.
  • the mask pattern 105 and the transparent conductive layer 104 are configured to generate an electric field therebetween to drive liquid crystal molecules within the liquid crystal layer 103 to be deflected.
  • the mask pattern 105 shown by the black stripe pattern includes the first sub-mask pattern 105A in the A region and the second sub-mask pattern 105B in the B region.
  • the first sub-mask pattern 105A includes a plurality of first mask pattern portions separated from each other, for example, a plurality of parallel and equally spaced oblique mask stripes;
  • the second sub-mask pattern 105B also includes A plurality of mutually separated second mask pattern portions, for example, a plurality of parallel mask strips arranged in parallel and equally spaced (only two are shown in FIG. 1).
  • the first spacing between each adjacent two oblique mask strips in the A region is less than the second spacing between each adjacent two straight mask strips in the B region.
  • the mask further includes a voltage supply unit 106 connected to the transparent conductive layer 104 and the mask pattern 105 for supplying a preset voltage to the mask pattern 105 and the transparent conductive layer 104. This electric field is generated between them.
  • the portion closer to the mask pattern is stronger due to the electric field, corresponding to The liquid crystal deflection degree is more orderly, so the transmittance of the corresponding liquid crystal to the light is relatively larger, and the portion farther from the mask pattern, because the electric field is weaker, the corresponding liquid crystal deflection is disordered, so the corresponding liquid crystal is opposite to the light.
  • the transmission rate is relatively small.
  • the transmittance from the portion near the mask pattern to the light is relatively small, and the portion far from the mask pattern has a relatively high transmittance to the light.
  • the two phases cancel out, so that the light is transmitted through each of the light-transmissive gaps.
  • the rate tends to be uniform, so that the transmittance of light in the light-transmitting gaps of different sizes tends to be uniform. That is to say, in the embodiment of the present invention, the light intensity of the same intensity of light transmitted from the different linear density regions of the mask plate tends to be uniform, so that the difference in exposure dose between different linear density regions can be solved, and the size after exposure and development is solved. Uncontrollable problem.
  • the second sub-mask pattern 105B of the mode portion is a case where the shape and area division of the mask pattern 105 on the second substrate 102 are shown.
  • the mask pattern 105 described above may include a plurality of strip electrodes spaced apart from each other (such as the black stripe region in FIG. 1).
  • the mask pattern 105 is formed sub-regionally on the second substrate (such as the A region and the B region shown in FIG. 1), and all of the strip electrodes in each region have the same width. And the spacing between each two adjacent strip electrodes is equal (ie, the mask pattern is divided according to the width and spacing of the strip electrodes).
  • the strip electrodes can block the transmission of light to form, for example, a fanout wiring (sector wiring) region or a pixel (pixel) region wiring pattern in the array substrate.
  • the mask pattern 105 may be a pattern of other shapes (such as a pattern including one or more of a dot, a rectangular block, a long strip, and an arc), or may be divided according to other manners. This is not a limitation.
  • the mask pattern 105 is located on the outer side of the second substrate 102 (on the side different from the liquid crystal layer 103), and the mask pattern 105 may be located on the inner side of the second substrate 102 (on the same side as the liquid crystal layer 103). The embodiment of the invention does not limit this.
  • the first substrate 101 and the second substrate 102 are oppositely disposed, and the liquid crystal in the liquid crystal layer 103 is sealed between the two substrates; and the voltage supply unit 106 supplies voltage to the transparent conductive layer 104 and the mask pattern 105.
  • the liquid crystal in the liquid crystal layer 103 can be deflected by the electric field therebetween.
  • the above reticle of the embodiment can be regarded as a liquid crystal cell, wherein the transparent conductive layer 104 can be regarded as a common electrode or an upper electrode, and the mask pattern 105 can be regarded as a pixel electrode or a lower electrode, and the liquid crystal layer 103 is
  • the main influencing factors of the deflection of the liquid crystal are the shape of the mask pattern 105 and the level of voltage applied to the mask pattern 105.
  • the forming materials of the first substrate 101 and the second substrate 102 have transparent and non-conductive properties, and may specifically include glass, quartz or the like, plastic, rubber, glass fiber, transparent resin or other polymer materials.
  • the material for forming the transparent conductive layer 104 has a transparent and electrically conductive property, specifically Indium tin oxide (ITO), indium zinc oxide (IZO), transparent conductive resin or other transparent conductive materials are included.
  • ITO Indium tin oxide
  • IZO indium zinc oxide
  • transparent conductive resin transparent conductive resin
  • the material forming the mask pattern 105 has opaque and conductive properties, and specifically may include, for example, iron, copper, aluminum, nickel, molybdenum, chromium or other metals, or oxides or nitrides of metals, alloys, and metal layers.
  • the material for forming the mask pattern 105 includes metal chromium, which satisfies the requirements of the mask pattern 105 for various aspects including light blocking property, electrical conductivity, stability, and the like.
  • the above-described voltage supply unit 106 for supplying a predetermined voltage to the mask pattern 105 and the transparent conductive layer 104 may generally include a voltage source and a resistor or other electrical component for changing the magnitude of the output voltage.
  • An output electrode of the pressure supply unit 106 may be connected to the electrode lead-out position of the transparent conductive layer 104 at the surface or the side, and the other output electrode of the pressure supply unit 106 may be connected to the electrode lead-out position of the mask pattern 105 through the transparent conductive medium.
  • the pressure supply unit 106 of other structures may be used or other electrical connection manners may be used.
  • the transparent conductive layer 104 and the mask pattern 105 may be respectively connected to different pressure supply units, which is not limited in this embodiment of the present invention. .
  • the reticle shown in FIG. 2 is identical to the reticle structure shown in FIG.
  • the first sub-mask pattern 105A, the second sub-mask pattern 105B, and the transparent electrode layer 104 are supplied with a predetermined voltage by the voltage supply unit 106 to generate an electric field
  • the liquid crystal in the liquid crystal layer 103 is deflected by an electric field. A certain angle.
  • the liquid crystals are sequentially deflected in regions corresponding to the sub-mask patterns 105A, 105B (for example, regions immediately above the sub-mask patterns 105A, 105B) and in the vicinity thereof, and thus these
  • the transmittance of the liquid crystal layer 103 in the region is relatively high; and in the region of the farther ion mask patterns 105A, 105B, the liquid crystal deflection in the liquid crystal layer 103 is relatively disordered, and thus the transmittance of the liquid crystal layer 103 in these regions relatively low.
  • the liquid crystal in the liquid crystal layer 103 is generally more ordered in deflection, so that the transmittance of the liquid crystal layer in the A region is relatively large; and the linear density of the second mask pattern 105B in the B region is low. Therefore, the deflection of the liquid crystal in the liquid crystal layer 103 in a partial region is relatively disordered, and thus the transmittance of the liquid crystal layer in the B region is relatively small.
  • the transmittance of light in a low linear density region having a large transmittance is relatively reduced, and a high linear density region having a small transmittance is originally obtained.
  • the transmittance of the light in the domain is relatively increased (that is, the self-compensation of the light transmittance in different linear density regions), so the light intensity L2A emitted from the A region and the light L2B emitted from the B region tend to coincide with each other. It can solve the problem that the exposure dose difference in different linear density regions is too large and the size after exposure and development is uncontrollable.
  • each mask pattern portion may be respectively used with the pressure supply unit.
  • the output electrodes of 106 are connected in such a way that each mask pattern portion has a predetermined voltage.
  • the voltage supply unit 106 can supply a predetermined voltage of the same size to each mask pattern portion.
  • each mask pattern portion is connected to one electrode of a voltage source; alternatively, a predetermined voltage of a different magnitude may be provided to each mask pattern portion.
  • each mask pattern portion is connected to an electrode of a voltage source in the voltage supply unit 106.
  • the voltage level In the setting of the voltage level, it is relatively simple to provide the same voltage to all the mask pattern portions, or to provide different voltages to the mask pattern portions in different regions, or to provide finer adjustments to each mask.
  • the voltage of the pattern portion is used to achieve better light transmittance control effect.
  • connection pattern 107 as shown in FIG. 2 may be employed to electrically connect the mutually separated mask pattern portions to each other.
  • a transparent conductive material may be optionally used to form the above-described connection pattern 107.
  • the connection pattern 107 may be disposed under the mask pattern 105, that is, the connection pattern 107 is formed first to form the mask pattern 105; in another example, the mask pattern 105 may also be disposed on the mask pattern 105. That is, the mask pattern 105 is formed first to form the connection pattern 107, so that the mask pattern 105 is located on a plane parallel to the transparent conductive layer 104 while ensuring the uniformity of the electric field strength and electric field intensity of the mask pattern 105.
  • connection pattern is further used to electrically connect any two mutually separated mask pattern portions on the second substrate 102 to each other; and the voltage supply unit 106 is connected to the mask pattern 105 through the connection pattern. And including a voltage source for providing a predetermined voltage between the mask pattern 105 and the transparent conductive layer 104. That is, all of the partial mask patterns 105 separated from each other are electrically connected through the connection pattern, so that the entire mask pattern forms an integral electrode, and the voltages are the same everywhere. Further, the electrode extraction position of the mask pattern 105 is also included in the connection pattern so that the metal wire connected to the voltage supply unit 106 is not required to be disposed on the light transmission region.
  • the mask pattern 105 is formed sub-regionally on the second substrate 102, and the connection pattern is further used to make any two mutually separated mask pattern portions in the same region on the second substrate 102 from each other.
  • the voltage supply unit 106 is respectively connected to the mask pattern portion in the at least one region, and includes at least one voltage source for respectively applying the mask pattern portion and the transparent conductive layer 104 in the at least one region.
  • Provide a preset voltage That is, the mask pattern portion in each region is formed as a region electrode, and the voltage is supplied from the voltage supply unit 106 by a predetermined voltage, and the connection pattern includes the electrode extraction position of each of the region electrodes.
  • the design allows the voltages on the electrodes of each region to be separately controlled; even if the voltages are the same everywhere at a preset voltage, the design can be caused by the voltage drop caused by the material resistance. Further improve the uniformity of the voltage, which is suitable for the mask design under large size.
  • connection pattern includes, for example, a strip connection pattern that is not parallel to any strip mask pattern portion, as shown by the connection pattern 107 in FIG. 2, the strip connection pattern is not in accordance with any strip mask.
  • the pattern portions are parallel to each other, and thus are more easily intersected with the stripe mask patterns, functioning to form electrical connections between the mutually separated mask pattern portions, and are particularly suitable for mask patterns in which the mask pattern is stripe-shaped. design.
  • the strip connection pattern is not only easy to implement in the manufacturing process, but also applicable to mask patterns of different shapes, and has a wider application range.
  • connection pattern 107 may be formed, for example, in a non-transmissive region of the mask.
  • the mask pattern 105 and the liquid crystal layer 103 are not defined on the same side or different sides of the second substrate 102, because the mask pattern 105 can be made in the liquid crystal layer 103 regardless of the side.
  • the liquid crystal is controlled to deflect.
  • the liquid crystal layer 103 maintains the same thickness everywhere, facilitating other subsequent operations on the mask pattern 105.
  • the liquid crystal in the liquid crystal layer 103 can have a preset pretilt angle, for example, can be realized by a liquid crystal alignment technology in a liquid crystal forming process to further improve the optical performance of the liquid crystal layer 103 and improve light transmission.
  • the accuracy of rate regulation can be realized by a liquid crystal alignment technology in a liquid crystal forming process to further improve the optical performance of the liquid crystal layer 103 and improve light transmission.
  • An embodiment of the invention provides a method for manufacturing a mask, the method comprising:
  • Step 301 forming a pattern including a transparent conductive layer on the first substrate
  • Step 302 forming a mask pattern including at least two mask pattern portions separated from each other on a second substrate, the forming material of the mask pattern comprising an opaque conductive material;
  • Step 303 align the first substrate and the second substrate into a box, and form a liquid crystal layer between the first substrate and the second substrate, where the transparent conductive layer is located with the liquid crystal layer The same side of the first substrate;
  • Step 304 forming an electrical connection between the pressure supply unit and the transparent conductive layer, and between the pressure supply unit and the mask pattern, the pressure supply unit for using the mask pattern and the transparent A predetermined voltage is supplied between the conductive layers.
  • step 302a is further included: forming a connection pattern on the second substrate, the formation material of the connection pattern includes a transparent conductive material, and the connection pattern is used to separate at least The two mask pattern portions are electrically connected to each other.
  • a transparent conductive material such as indium tin oxide ITO is deposited as a transparent conductive layer on a quartz substrate (first substrate) having a thickness of about 10 mm.
  • a PI (Polyimide) solution is coated on the upper surface of the other glass substrate (second substrate) and the transparent conductive layer, and the liquid crystal is sealed at a certain pretilt angle by a process such as rubbing alignment and a box. There is between the two substrates, and the transparent conductive layer can be externally connected to the voltage.
  • An opaque conductive metal such as chromium is vapor-deposited on the lower surface of the glass substrate, and then a photoresist is applied, the mask pattern is formed according to a mask process, and then a material having high transmittance and good conductivity is deposited by evaporation.
  • a masking process such as glue, laser irradiation, etching, and peeling is performed to form the above-described connection pattern such that portions of the mask patterns separated from each other are connected by the material. Since the connection pattern is transparent, it does not affect the light transmission and does not leave an additional pattern on the substrate.
  • a voltage supply unit connected to the outside is provided to apply a voltage to the common electrode and the mask pattern.
  • An embodiment of a method of patterning using a mask is exemplified below.
  • An embodiment of the invention provides a method for patterning using a mask, the method comprising:
  • Step 401 providing a preset voltage to the mask pattern and the transparent conductive layer by the voltage supply unit to generate an electric field therebetween;
  • Step 402 illuminating the first substrate to sequentially pass a portion of the light through the first substrate, the transparent conductive layer, the liquid crystal layer, and the second substrate, and removing the mask from the second substrate It is emitted in an area other than the pattern.
  • the main process of patterning using a mask is to use the transmitted light to illuminate the mask.
  • Other structures perform operations such as photolithography, and the special features in the patterning method in the embodiment of the present invention mainly lie in the setting of the preset voltage (described above) and the transmittance of the light in the mask is relatively uniform. Since the mask patterning provided by the embodiment of the present invention has the corresponding technical features of the mask board, the same technical problem can be solved, and the same technical effect is produced.
  • a mask comprising:
  • a transparent conductive layer formed on the first substrate, the transparent conductive layer and the liquid crystal layer being located on the same side of the first substrate;
  • the mask pattern and the transparent electrode are configured to generate an electric field therebetween to drive deflection of liquid crystal molecules in the liquid crystal layer.
  • the mask pattern comprises a first sub-mask pattern located in a first region and a second sub-mask located in a second region different from the first region a pattern, the first sub-mask pattern including at least two first mask pattern portions separated by a first interval, the second sub-mask pattern including at least two second mask patterns separated by a second interval In part, the first interval is smaller than the second interval.
  • the mask according to (1) or (2) further comprising a pressure supply unit connected to the transparent conductive layer and the mask pattern, configured to be opposite to the mask pattern and the transparent conductive
  • the layer provides a preset voltage to generate the electric field.
  • a method of manufacturing a mask comprising:
  • the predetermined voltage generates an electric field to drive deflection of liquid crystal molecules within the liquid crystal layer.
  • connection pattern is formed on the second substrate, the formation material of the connection pattern includes a transparent conductive material, and the connection pattern is configured to electrically connect the mutually separated mask pattern portions to each other.

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Abstract

一种掩模板及其制造方法、利用掩模板构图的方法，该掩模板包括：相对设置的第一基板（101）和第二基板（102）；位于所述第一基板（101）与所述第二基板（102）之间的液晶层（103）；形成于所述第一基板（101）上的透明导电层（104），所述透明导电层（104）与所述液晶层（103）位于所述第一基板（101）的同一侧；以及以不透明导电材料形成于所述第二基板（102）上的掩模图案（105），其中，所述掩模图案（105）和所述透明电极层（104）构造为能够在其之间产生电场以驱动该液晶层（103）内的液晶分子偏转。

Description

掩模板及其制造方法、利用掩模板构图的方法 技术领域
本发明实施例涉及掩模板及其制造方法、利用掩模板构图的方法。
背景技术
常规的掩模板的掩模图案在各个区域内的线密度大小存在差异，例如对应于扫描线的fanout配线(扇形配线)区域的掩模图案的线密度(与fanout配线区域的布线密度一致)通常情况下相对很大(或者说掩模图案中的透光间隙相对很小)，而对应于pixel(像素)区域的掩模图案的线密度则相对很小(或者说掩模图案中的透光间隙相对很大)。在进行曝光时，虽然掩模板中不同区域接收到的曝光剂量是相同的，但是线密度的差异会导致光在不同区域内的透射率存在差异(例如图案较密集的区域内光线的透过率较低)，这使得线密度大的区域所需的曝光剂量也更大，因而不同区域内理想的曝光显影后尺寸难以同时保证，不利于掩模工艺的简化。
发明内容
本发明的实施例提供了一种掩模板，包括：相对设置的第一基板和第二基板；位于所述第一基板与所述第二基板之间的液晶层；形成于所述第一基板上的透明导电层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；以及以不透明导电材料形成于所述第二基板上的掩模图案，其中，所述掩模图案和所述透明电极构造为能够在其之间产生电场以驱动该液晶层内的液晶分子偏转。
本发明的实施例还提供了一种掩模板的制造方法，包括：在第一基板上形成包括透明导电层；在第二基板上形成包括掩模图案，所述掩模图案的形成材料包括不透明导电材料；将所述第一基板与所述第二基板对位成盒，并在所述第一基板与所述第二基板之间形成液晶层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；形成包括供压单元与所述透明导电层之间、以及供压单元与所述掩模图案之间的电连接，所述供压单元构造为向所述掩 模图案与所述透明导电层提供预设的电压以产生电场驱动该液晶层内的液晶分子偏转。
本发明的实施例进一步提供了一种利用掩模板构图的方法，其中，所述掩模板为上述的掩模板，该方法包括：通过所述供压单元向所述掩模图案与所述透明导电层提供预设的电压以在其之间产生电场以驱动该液晶层内的液晶分子偏转；照射所述第一基板，使部分光线依次透过所述第一基板、所述透明导电层、所述液晶层、所述第二基板，并从第二基板上除所述掩模图案以外的区域内出射。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，并非对本公开的限制。
图1是本发明一个实施例中一种掩模板的结构示意图；
图2是本发明一个实施例中一种掩模板的工作原理示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中需要说明的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明实施例和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况 理解上述术语在本发明实施例中的具体含义。
本发明实施例提供一种掩模板及其制造方法、利用掩模板构图的方法，以解决不同线密度区域曝光剂量差别过大、曝光显影后尺寸无法控制的问题。
图1示出了本发明一个实施例中的掩模板的结构，其中图1的上半部分示出了该掩模板的截面结构，而图1的下半部分示出了该掩模板的仰视图的一部分。如图1所示，该掩模板包括：
相对设置的第一基板101和第二基板102；
位于第一基板101与第二基板102之间的液晶层103；
形成于第一基板101上的透明导电层104，该透明导电层104与上述液晶层103位于第一基板101的同一侧；以及
以不透明导电材料形成于上述第二基板102上的掩模图案105。掩模图案105和透明导电层104构造为能够在其之间产生电场以驱动液晶层103内的液晶分子偏转。
如图1下部分所示，由黑色条纹状图案示出的掩模图案105，包括A区域内的第一子掩模图案105A和B区域内的第二子掩模图案105B。在图1中，第一子掩模图案105A包括多个相互分离的第一掩模图案部分，例如，多条平行且等间隔排布的斜掩模条纹；第二子掩模图案105B也包括多个相互分离的第二掩模图案部分，例如，多条平行且等间隔排布的直掩模条纹(图1中仅示出两条)。在A区域中每相邻两条斜掩模条纹之间的第一间隔小于B区域中每相邻两条直掩模条纹之间的第二间隔。
在本实施例中，该掩模板可选地包括与上述透明导电层104及上述掩模图案105相连的供压单元106，用于向掩模图案105与透明导电层104提供预设的电压以在其之间产生该电场。
对于该掩模板中的液晶层103而言，在平行于第二基板的横向方向(如图1和2中的箭头指示方向)上，离掩模图案较近的部分由于电场较强，对应的液晶偏转度较有序，因此对应的液晶对光线的透过率相对较大，而离掩模图案较远的部分，由于电场较弱，对应的液晶偏转较无序，因此对应的液晶对光线的透过率相对较小。而对于该掩模板的除液晶层103之外的结构而言，离掩模图案近的部分对光线的透过率相对较小而离掩模图案远的部分对光线的透过率相对较大，两相抵消，使得在每一个透光间隙内对光线的透过 率趋向均匀，进而使得不同大小尺寸的透光间隙内对光线的透过率也趋向一致。也就是说，本发明实施例可以使同样强度的光从掩模板不同线密度的区域内透过后的光强也趋于一致，因此可以解决不同线密度区域曝光剂量差别过大、曝光显影后尺寸无法控制的问题。
需要说明的是，图中仅以第二基板102上A区域内的包括多个斜条纹状的掩模图案部分的第一子掩模图案105A和B区域内的包括多个直条纹状的掩模图案部分的第二子掩模图案105B为例展示第二基板102上掩模图案105的形状和区域划分的情形。
上述掩模图案105可以包括多个彼此间隔开的条状电极(如图1中的黑色条纹区域)。图1中，上述掩模图案105分区域地形成于所述第二基板上(如图1所示出的A区域与B区域)，每一区域内的所有所述条状电极具有相同的宽度，且每两个相邻条状电极之间的间距相等(即掩模图案是按照条状电极的宽度和间距划分区域的)。上述条状电极可以通过阻挡光线的透过以形成例如阵列基板中的fanout配线(扇形配线)区域或pixel(像素)区域的布线图形。当然，掩模图案105可以是其他形状的图案(如包括圆点、矩形块、长条、弧线中一种或多种的图案)、也可以按照其他方式进行区域划分，本发明实施例对此不做限制。而且，图1中将掩模图案105位于第二基板102的外侧(与液晶层103不同侧)，而掩模图案105也可以位于第二基板102的内侧(与液晶层103同侧)，本发明实施例对此不做限制。
在本实施例中，第一基板101、第二基板102相对设置，并把液晶层103中的液晶封存在两基板之间；而供压单元106向透明导电层104与掩模图案105提供电压，使液晶层103中的液晶可以在其间电场的作用下偏转。也就是说，此实施例的上述掩模板可以视作一液晶盒，其中透明导电层104可视作公共电极或上电极、掩模图案105可视作像素电极或下电极，而液晶层103中液晶的偏转情况的主要影响因素为掩模图案105的形状及在掩模图案105上所加电压的高低。
上述第一基板101和第二基板102的形成材料具有透明、不导电的性质，具体来说可以包括玻璃、石英或类似物、塑胶、橡胶、玻璃纤维、透明树脂或其他高分子材料。
上述透明导电层104的形成材料具有透明、导电的性质，具体来说可以 包括铟锡氧化物(ITO)、铟锌氧化物(IZO)、透明导电树脂或者其他透明导电材料。
上述掩模图案105的形成材料具有不透明、导电的性质，具体来说可以包括如铁、铜、铝、镍、钼、铬或其他金属，或者金属的氧化物或氮化物、合金、包含金属层的多层膜、不透明导电树脂材料(如加入炭黑的树脂材料)等等。在一个示例中，上述掩模图案105的形成材料包括金属铬，可以满足掩模图案105对于包括遮光性、导电性、稳定性等多方面的要求。
用于向掩模图案105与透明导电层104提供预设的电压的上述供压单元106通常可以包括电压源和用于改变输出电压大小的电阻或其他电器元件。供压单元106的一输出电极可与透明导电层104在表面或侧面的电极引出位置相连，供压单元106另一输出电极可通过透明导电介质与掩模图案105的电极引出位置相连。当然，也可以采用其他结构的供压单元106或采用其他电连接方式，例如，透明导电层104和掩模图案105也可分别连接到不同的供压单元，本发明实施例对此不做限定。
具有上述结构的本发明实施例所提供的掩模板的工作原理如下：
参见图2所示出的掩模板的工作原理示意图，图2中所示掩模板与图1所示的掩模板结构一致。在利用供压单元106给第一子掩模图案105A、第二子掩模图案105B与透明电极层104提供预设的电压以产生电场后，液晶层103中的液晶就会在电场作用下偏转一定角度。对于第二基板102上方的液晶层103，在与子掩模图案105A、105B对应的区域(例如，子掩模图案105A、105B的正上方区域)及附近的区域内液晶有序偏转，因而这些区域内液晶层103的透过率相对较高；而在较远离子掩模图案105A、105B的区域内，液晶层103中的液晶偏转较无序，因而这些区域内液晶层103的透过率相对较低。因此，在同样强度的光L1A与L1B分别照射到第一基板101上与A区域与B区域对应的区域内时，由于A区域内的第一掩模图案105A的透光间隙较小(线密度较高)，因此液晶层103中的液晶总体来说偏转较为有序，因而A区域内液晶层的透过率相对较大；而B区域内的第二掩模图案105B的线密度较低，因此液晶层103中的液晶在部分区域内的偏转较为无序，因而B区域内液晶层的透过率相对较小。由于上述效应的存在，原本透光率较大的低线密度区域内光线的透过率相对减小，原本透光率较小的高线密度区 域内光线的透过率相对增大(即不同线密度区域对于透光率的自补偿)，所以从A区域出射的光线L2A与从B区域出射的光线L2B总体上的光强趋于一致，因此可以解决不同线密度区域曝光剂量差别过大、曝光显影后尺寸无法控制的问题。
在上述实施例中，若存在由于图形间断处或其他原因而彼此分离的掩模图案部分(例如图1中彼此分离的条状电极)，这些分离的掩模图案部分可以采用分别与供压单元106的输出电极连接的方式来使每一掩模图案部分均具有预设的电压。此时，供压单元106可以向每一掩模图案部分提供同样大小的预设的电压。在一个示例中，每一掩模图案部分均与电压源的一个电极相连；或者，也可以向每一掩模图案部分提供不同大小的预设的电压。例如，每一掩模图案部分均与供压单元106中的一个电压源的一电极相连。在电压大小的设定上，较为简便地可对所有掩模图案部分均提供同一电压，也可以对不同区域内的掩模图案部分分别提供不同电压，或者更精细地分别调整提供到每一掩模图案部分的电压以达到更佳的透光率调控效果。
然而，若采用与电压源电极直接连接的方式会引入很多冗余的布线，不利于提高空间与原料的利用率。对此，可以采用如图2中所示的连接图案107来使相互分离的掩模图案部分彼此电连接。为了不改变掩模图案的实际遮光区域，可选用透明导电材料来形成上述连接图案107。在一个示例中，连接图案107可以设置在掩模图案105之下，也就是先形成连接图案107再形成掩模图案105；在另一个示例中，也可以设置在掩模图案105之上，也就是先形成掩模图案105再形成连接图案107，这样，掩模图案105位于与透明导电层104平行的一平面上，同时保证了掩模图案105形成电场的强度和电场强度的均匀性。
在一种实施方式中，上述连接图案进一步用于使第二基板102上的任意两个相互分离的掩模图案部分彼此电连接；而供压单元106通过上述连接图案与掩模图案105相连，并包括一电压源，该电压源用于向掩模图案105与透明导电层104之间提供一预设的电压。即，将所有相互分离的部分掩模图案105通过连接图案电连接，从而使整个掩模图案形成一整体电极，电压处处相同。且上述掩模图案105的电极引出位置也包括在连接图案中，使透光区域上不需要设置与供压单元106相连的金属导线。
在另一种实施方式中，掩模图案105分区域地形成于第二基板102上，上述连接图案进一步用于使第二基板102上同一区域内的任意两个相互分离的掩模图案部分彼此电连接；供压单元106分别与至少一个区域内的掩模图案部分相连，并包括至少一个电压源，上述至少一个电压源用于分别向至少一个区域内的掩模图案部分以及透明导电层104提供预设的电压。即，使每一区域内的掩模图案部分形成一区域电极，并由供压单元106分别提供预设电压、且连接图案包括每一区域电极的电极引出位置。除上述有益效果之外，该设计使的每一区域电极上的电压可以分别控制；即使在预设电压时同样要使电压处处相同，该设计由于不存在材料电阻导致的电压压降，因而可以进一步提高电压的均匀性，适用于大尺寸下的掩模板设计。
可选地，上述连接图案例如包括不与任一条状掩模图案部分互相平行的条状连接图案，正如图2中的连接图案107所示，该条状连接图案由于不与任一条状掩模图案部分的互相平行，因而更容易与该些条状掩模图案相交，起到形成相互分离的掩模图案部分之间的电连接的作用，尤其适用于掩模图案为条纹状的掩模板的设计。而且，条状连接图案不仅在制作工艺上容易实现，而且可以适用于不同形状的掩模图案，适用范围更广。此外，连接图案107例如可形成在掩模板的一非透光区域内。
在上述任一实施例中，并未限定掩模图案105与所述液晶层103位于第二基板102的同一侧还是不同侧，因为无论在哪一侧掩模图案105都可以使液晶层103中的液晶受控偏转。在掩模图案105与液晶层103分别位于第二基板102的两侧的情况下，液晶层103在各处均保持同一厚度，便于对掩模图案105进行其他后续的操作。
在上述任一实施例中，可以使液晶层103中的液晶具有预设的预倾角，例如可以由液晶成盒工艺中的液晶取向技术实现，以进一步改善液晶层103的光学性能，提高透光率调控的准确度。
基于上述掩模板的结构，下面举出一种掩模板的制造方法的实施例。本发明的一实施例提供一种掩模板的制造方法，该方法包括：
步骤301：在第一基板上形成包括透明导电层的图形；
步骤302：在第二基板上形成包括相互分离的至少两个掩模图案部分的掩模图案，所述掩模图案的形成材料包括不透明导电材料；
步骤303：将所述第一基板与所述第二基板对位成盒，并在所述第一基板与所述第二基板之间形成液晶层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；
步骤304：形成包括供压单元与所述透明导电层之间、以及供压单元与所述掩模图案之间的电连接，所述供压单元用于向所述掩模图案与所述透明导电层之间提供预设的电压。
例如在步骤302之后且在步骤303之前，还包括步骤302a：在所述第二基板上形成连接图案，所述连接图案的形成材料包括透明导电材料，所述连接图案用于使相互分离的至少两个掩模图案部分彼此电连接。
下面提供一种掩模板的制造方法的实例：在10mm厚度左右的石英衬底(第一基板)上蒸镀氧化铟锡ITO等透明导电材料作为透明导电层。在另一的玻璃衬底(第二基板)的上表面及上述透明导电层上涂覆PI(Polyimide，聚酰亚胺)液，经过摩擦配向、对盒等工序将液晶以一定的预倾角封存在两个基板之间，并保证透明导电层可以外接电压。在玻璃衬底的下表面蒸镀铬等不透明导电金属，再涂覆光刻胶，按照掩模工艺形成上述掩模图案，然后再蒸镀一层透过率高、导电性好的材料，经过涂胶，激光照射，刻蚀，剥离等掩模工艺，形成上述连接图案使得上述掩模图案中彼此分离的部分用此材料连接起来。该连接图案由于是透明的，因而不影响透光，不会在基板上留下附加的图形。最后，设置连接外部的供压单元，使公共电极和掩模图案接外加电压。
由于本发明实施例提供的掩模板的制造方法与上述掩模板具有相应的技术特征，所以也能解决同样的技术问题，产生相同的技术效果。
基于上述掩模板的结构，下面举出一种利用掩模板构图的方法的实施例。本发明的一实施例提供一种利用掩模板构图的方法，该方法包括：
步骤401：通过所述供压单元向所述掩模图案与所述透明导电层提供预设的电压，以在其之间产生一电场；
步骤402：照射所述第一基板，使部分光线依次透过所述第一基板、所述透明导电层、所述液晶层、所述第二基板，并从第二基板上除所述掩模图案以外的区域内出射。
其中，利用掩模板构图的主要工艺即通过照射掩模板来利用透射光来对 其他结构进行光刻等操作，本发明实施例中的构图方法中的特殊之处主要在于预设电压的设定(上文已经说明过)及光线在上述掩模板中的透过率较为均匀。由于本发明实施例提供的利用掩模板构图与上述掩模板具有相应的技术特征，所以也能解决同样的技术问题，产生相同的技术效果。
根据上述描述，根据本公开的实施例至少可以提供以下结构和方法：
(1)一种掩模板，包括：
相对设置的第一基板和第二基板；
位于所述第一基板与所述第二基板之间的液晶层；
形成于所述第一基板上的透明导电层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；以及
以不透明导电材料形成于所述第二基板上的掩模图案，
其中，所述掩模图案和所述透明电极构造为能够在其之间产生电场以驱动该液晶层内的液晶分子偏转。
(2)根据(1)所述的掩模板，其中所述掩模图案包括位于第一区域内的第一子掩模图案以及位于不同于第一区域的第二区域内的第二子掩模图案，所述第一子掩模图案包括以第一间隔分离的至少两个第一掩模图案部分，所述第二子掩模图案包括以第二间隔分离的至少两个第二掩模图案部分，所述第一间隔小于第二间隔。
(3)根据(1)或(2)所述的掩模板，还包括与所述透明导电层及所述掩模图案相连的供压单元,构造为向所述掩模图案与所述透明导电层提供预设的电压以产生所述电场。
(4)根据(2)或(3)所述的掩模板，其中，全部的所述第一掩模图案部分以及全部的所述第二掩模图案部分彼此电连接。
(5)根据(4)所述的掩模板，其中，所述第二基板上还包括以透明导电材料形成的连接图案，全部的第一掩模图案部分以及全部的所述第二掩模图案部分通过所述连接图案彼此电连接。
(6)根据(2)或(3)所述的掩模板，其中，全部的所述第一掩模图案部分彼此电连接，全部的所述第二掩模图案部分彼此电连接，且任意所述第一掩模图案部分与任意所述第二掩模图案部分电性隔离。
(7)根据(1)至(6)中任意一项所述的掩模板，其中，所述第一掩模 图案部分包括条状电极，所述第二掩模图案部分包括条状电极。
(8)根据(1)至(7)中任意一项所述的掩模板，其中，所述掩模图案与所述液晶层分别位于所述第二基板的两侧。
(9)根据(1)至(8)中任意一项所述的掩模板，其中，所述液晶层中的液晶具有预倾角。
(10)根据(1)至(9)中任意一项所述的掩模板，其中，所述掩模图案的形成材料包括金属铬。
(11)一种掩模板的制造方法，包括：
在第一基板上形成包括透明导电层；
在第二基板上形成包括掩模图案，所述掩模图案的形成材料包括不透明导电材料；
将所述第一基板与所述第二基板对位成盒，并在所述第一基板与所述第二基板之间形成液晶层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；
形成包括供压单元与所述透明导电层之间、以及供压单元与所述掩模图案之间的电连接，所述供压单元构造为向所述掩模图案与所述透明导电层提供预设的电压以产生电场驱动该液晶层内的液晶分子偏转。
(12)根据(11)所述的方法，其中，在所述在第二基板上形成包括掩模图案之后，还包括：
在所述第二基板上形成连接图案，所述连接图案的形成材料包括透明导电材料，所述连接图案构造为使相互分离的掩模图案部分彼此电连接。
(13)一种利用掩模板构图的方法，其中，所述掩模板为(1)至(10)中任意一项所述的掩模板，该方法包括：
通过所述供压单元向所述掩模图案与所述透明导电层提供预设的电压以在其之间产生电场以驱动该液晶层内的液晶分子偏转；
照射所述第一基板，使部分光线依次透过所述第一基板、所述透明导电层、所述液晶层、所述第二基板，并从第二基板上除所述掩模图案以外的区域内出射。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示 这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
虽然上文中已经用一般性说明及具体实施方式，对本公开作了详尽的描述，但在本公开基础上，可以对之作一些修改或改进，这对本领域技术人员而言是显而易见的。因此，在不偏离本公开精神的基础上所做的这些修改或改进，均属于本公开要求保护的范围。
本申请要求于2014年10月28日递交的中国专利申请第201410589976.7号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种掩模板，包括：
    相对设置的第一基板和第二基板；
    位于所述第一基板与所述第二基板之间的液晶层；
    形成于所述第一基板上的透明导电层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；以及
    以不透明导电材料形成于所述第二基板上的掩模图案，
    其中，所述掩模图案和所述透明电极构造为能够在其之间产生电场以驱动该液晶层内的液晶分子偏转。
  2. 根据权利要求1所述的掩模板，其中所述掩模图案包括位于第一区域内的第一子掩模图案以及位于不同于第一区域的第二区域内的第二子掩模图案，所述第一子掩模图案包括以第一间隔分离的至少两个第一掩模图案部分，所述第二子掩模图案包括以第二间隔分离的至少两个第二掩模图案部分，所述第一间隔小于第二间隔。
  3. 根据权利要求1或2所述的掩模板，还包括与所述透明导电层及所述掩模图案相连的供压单元,构造为向所述掩模图案与所述透明导电层提供预设的电压以产生所述电场。
  4. 根据权利要求2或3所述的掩模板，其中，全部的所述第一掩模图案部分以及全部的所述第二掩模图案部分彼此电连接。
  5. 根据权利要求4所述的掩模板，其中，所述第二基板上还包括以透明导电材料形成的连接图案，全部的第一掩模图案部分以及全部的所述第二掩模图案部分通过所述连接图案彼此电连接。
  6. 根据权利要求2或3所述的掩模板，其中，全部的所述第一掩模图案部分彼此电连接，全部的所述第二掩模图案部分彼此电连接，且任意所述第一掩模图案部分与任意所述第二掩模图案部分电性隔离。
  7. 根据权利要求1至6中任意一项所述的掩模板，其中，所述第一掩模图案部分包括条状电极，所述第二掩模图案部分包括条状电极。
  8. 根据权利要求1至7中任意一项所述的掩模板，其中，所述掩模图案与所述液晶层分别位于所述第二基板的两侧。
  9. 根据权利要求1至8中任意一项所述的掩模板，其中，所述液晶层中的液晶具有预倾角。
  10. 根据权利要求1至9中任意一项所述的掩模板，其中，所述掩模图案的形成材料包括金属铬。
  11. 一种掩模板的制造方法，包括：
    在第一基板上形成包括透明导电层；
    在第二基板上形成包括掩模图案，所述掩模图案的形成材料包括不透明导电材料；
    将所述第一基板与所述第二基板对位成盒，并在所述第一基板与所述第二基板之间形成液晶层，所述透明导电层与所述液晶层位于所述第一基板的同一侧；
    形成包括供压单元与所述透明导电层之间、以及供压单元与所述掩模图案之间的电连接，所述供压单元构造为向所述掩模图案与所述透明导电层提供预设的电压以产生电场驱动该液晶层内的液晶分子偏转。
  12. 根据权利要求11所述的方法，其中，在所述在第二基板上形成包括掩模图案之后，还包括：
    在所述第二基板上形成连接图案，所述连接图案的形成材料包括透明导电材料，所述连接图案构造为使相互分离的掩模图案部分彼此电连接。
  13. 一种利用掩模板构图的方法，其中，所述掩模板为权利要求1至10中任意一项所述的掩模板，该方法包括：
    通过所述供压单元向所述掩模图案与所述透明导电层提供预设的电压以在其之间产生电场以驱动该液晶层内的液晶分子偏转；
    照射所述第一基板，使部分光线依次透过所述第一基板、所述透明导电层、所述液晶层、所述第二基板，并从第二基板上除所述掩模图案以外的区域内出射。
PCT/CN2015/074301 2014-10-28 2015-03-16 掩模板及其制造方法、利用掩模板构图的方法 WO2016065799A1 (zh)

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