WO2016047053A1 - Dispositif de conversion d'énergie électrique et composant de dispositif - Google Patents

Dispositif de conversion d'énergie électrique et composant de dispositif Download PDF

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Publication number
WO2016047053A1
WO2016047053A1 PCT/JP2015/004493 JP2015004493W WO2016047053A1 WO 2016047053 A1 WO2016047053 A1 WO 2016047053A1 JP 2015004493 W JP2015004493 W JP 2015004493W WO 2016047053 A1 WO2016047053 A1 WO 2016047053A1
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Prior art keywords
inductance
value
current path
switch element
capacitance
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PCT/JP2015/004493
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English (en)
Japanese (ja)
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和弘 梅谷
啓祐 柳生
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株式会社デンソー
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Definitions

  • the present disclosure relates to a power conversion device and a device component including a switch element.
  • Non-Patent Document 1 As switching speed increases, as shown in Non-Patent Document 1, there is a possibility that a malfunction in which the potential difference between both ends of the switch element oscillates due to a noise voltage generated by switching continues for a long time. there were.
  • This disclosure is intended to provide a power conversion device and device parts that suppress self-excited vibration of a potential difference between both ends of a switch element.
  • the power conversion device includes a first switch element, a second switch element or a rectifier element, a capacitor, a main current path, and a sub current path.
  • the first switch element is electrically conductive between the pair of first and second energizing electrodes and the second energizing electrode according to the voltage or current applied to the control electrode, and is not electrically conducting. Switch to one of the non-conductive states.
  • the capacitor is connected in series with the first switch element.
  • the second switch element or the rectifier element is connected in series with the first switch element.
  • the AC component of the current between the first energizing electrode and the second energizing electrode is converted into the capacitor and the second switch element.
  • it is a current path that flows through the rectifying element.
  • the AC component of the current passes outside the first switch element between the control electrode and the second conductive electrode. This is the current path that flows.
  • the first divided value is between the second divided value and the third divided value.
  • the mutual inductance between the main current path and the sub current path is the first inductance
  • the difference between the self inductance and the first inductance of the main current path is the second inductance
  • the difference between the self inductance and the first inductance of the sub current path is Let the difference be the third inductance.
  • the capacitance between the control electrode and the first current-carrying electrode is a first capacitance
  • the capacitance between the control electrode and the second current-carrying electrode is a second capacitance
  • the first current-carrying electrode A capacitance between the first and second energizing electrodes is defined as a third capacitance.
  • a value obtained by dividing the first inductance by the first capacitance is a first divided value
  • a value obtained by dividing the second inductance by the second capacitance is a second divided value
  • the third inductance is the third electrostatic value.
  • the value divided by the capacity is the third division value.
  • the first parallel circuit controls the second energization electrode of the first switch element in the transient state in which the conduction state and the non-conduction state of the first switch element are switched.
  • the second parallel circuit is connected between the first energization electrode and the second energization electrode of the first switch element, and the third parallel circuit is connected to the control electrode of the first switch element and the first energization.
  • An equivalent circuit connected between the electrodes is formed (see FIG. 4).
  • the first parallel circuit, the second parallel circuit, and the third parallel circuit are configured by connecting a capacitor and an inductor in parallel with each other.
  • Barkhausen circuit is a typical model of circuit oscillation. In order for the Barkhausen circuit to operate stably without oscillation, the Barkhausen circuit must satisfy any one of the following first to fourth stable operation conditions.
  • the first stable operation condition is that the first impedance is inductive reactance (reactance is a positive value), and the second impedance is capacitive reactance (reactance is a negative value).
  • the second stable operation condition is that the first impedance is capacitive reactance (reactance is negative), and the second impedance is inductive reactance (reactance is positive).
  • the third stable operation condition is that both the first impedance and the third impedance are inductive reactances.
  • the fourth stable operation condition is that both the first impedance and the third impedance are capacitive reactances.
  • the first impedance, the second impedance, and the third impedance are determined to be inductive or capacitive in accordance with the frequency of the harmonic current. Specifically, it is inductive when the frequency is lower than the resonance frequency, and capacitive when it is higher than the resonance frequency.
  • the power converter device when the first switch element switches between the conductive state and the non-conductive state, the first divided value is between the second divided value and the third divided value. Therefore, any one of the first to fourth stable operating conditions is satisfied in the entire frequency band.
  • the power converter device concerning a 1st aspect can suppress the self-excited vibration of the electric potential difference between a pair of 1st electricity supply electrode in a 1st switch element, and a 2nd electricity supply electrode.
  • the device component includes the first switch element of the power conversion device according to the first aspect, and constitutes a part of the power conversion device according to the first aspect.
  • the apparatus component concerning a 2nd aspect is provided with a change apparatus.
  • the changing device includes a first inductance, a second inductance, a third inductance, a first capacitance, and a second electrostatic capacitance so that the first division value is a value between the second division value and the third division value. At least one value of the capacitance and the third capacitance is changed by an operation from the outside of the device component.
  • the device component according to the second aspect configured as described above causes the first divided value to be a value between the second divided value and the third divided value in the power conversion device according to the first aspect. Even if it is difficult to mount the device component so that the first divided value is a value between the second divided value and the third divided value in advance, the second aspect The effect similar to the power converter device concerning a 1st aspect can be acquired by changing the setting of the apparatus components concerning.
  • FIG. 1 It is a circuit diagram of a step-up chopper device. It is a figure which shows the equivalent circuit using a transformer. It is a figure which shows the equivalent circuit using a T-type equivalent circuit. It is a figure which shows the equivalent circuit to which Y-delta conversion is applied. It is a figure which shows the equivalent circuit expressed as a Barkhausen type circuit. It is a graph which shows the relationship between the resonant frequency and impedance in the case of fgs ⁇ fds ⁇ fgd.
  • the step-up chopper device 1 of the present embodiment includes a diode 11, a switch element 12, capacitors 13, 14, an inductor 15, DC power supplies 16, 17, a driver circuit (DRV) 18, an output terminal 19, and a ground.
  • a terminal 20 is provided.
  • the diode 11 has a cathode connected to the output terminal 19 and an anode connected to the drain 12D of the switch element 12.
  • the switch element 12 is an N-channel field effect transistor, the drain 12D is connected to the anode of the diode 11, and the source 12S is connected to the ground terminal 20.
  • the capacitor 13 has one end connected to a connection point between the capacitor 14 and the cathode of the diode 11, and the other end connected to the ground terminal 20.
  • the capacitor 14 has one end connected to the connection point between the output terminal 19 and the capacitor C1 and the other end connected to the ground terminal 20.
  • the capacitor 14 is an electrolytic capacitor having a large capacitance so that the power supply can be sufficiently smoothed.
  • the capacitor 13 is a surface mount capacitor having a smaller capacitance than the capacitor 14.
  • the inductor 15 has one end connected to the DC power supply 16 and the other end connected to a connection point between the diode 11 and the switch element 12.
  • the DC power supply 16 has a positive electrode connected to the inductor 15 and a negative electrode connected to the ground terminal 20.
  • the DC power supply 17 has a positive electrode connected to the power supply terminal of the driver circuit 18 and a negative electrode connected to the ground terminal 20.
  • the driver circuit 18 is in an on state in which the energization path between the positive electrode of the DC power supply 17 and the gate 12G of the switch element 12 is communicated, and the negative path of the DC power supply 17 and the gate 12G of the switch element 12 It is driven so as to be in any state of the off state communicating with the energization path between.
  • the step-up chopper device 1 configured as described above can generate a voltage higher than that of the DC power supply 16 at the output terminal 19 by turning on and off the switch element 12. That is, when the switch element 12 is first turned on, magnetic energy is accumulated in the inductor 15. Thereafter, when the switch element 12 is turned off, the magnetic energy accumulated in the inductor 15 increases the voltage at the connection point between the inductor 15 and the switch element 12, and charges are accumulated in the capacitor 14. By repeating this operation, the voltage at the output terminal 19 rises.
  • an inductance component that does not induce a voltage in the gate current path Rg (described later) is Ld.
  • an inductance component that induces a voltage in the gate current path Rg is Ls.
  • an inductance component that does not induce a voltage in the main current path Rm is Lg.
  • the capacitance between the gate 12G and the source 12S of the switch element 12 is Cgs
  • the capacitance between the drain 12D and the source 12S is Cds
  • the capacitance between the gate 12G and the drain 12D is Cgd.
  • the boost chopper device 1 is formed so that the following formula (1) or the following formula (2) is established.
  • the switch element 12 of the boost chopper device 1 When the switch element 12 of the boost chopper device 1 is turned on / off, the amount of current flowing through the drain 12D of the switch element 12 changes abruptly. For this reason, a large harmonic current is superimposed on the drain current at the moment of switching of the switch element 12.
  • the inductor current can be regarded as a constant current in a short time such as the moment of switching. For this reason, this harmonic current cannot flow through the inductor 15 but flows through the diode 11.
  • the harmonic current path forms a loop-shaped current path from the drain 12D of the switch element 12 through the diode 11 and the capacitor 13 to the source 12S of the switch element 12.
  • this current path is referred to as a main current path Rm.
  • this harmonic current passes through the driver circuit 18 from the gate 12G of the switch element 12, and from the positive electrode of the DC power supply 17 through the smoothing capacitor of the DC power supply 17, the source of the switch element 12 12S is reached.
  • the harmonic current path forms a loop-shaped current path from the gate 12G of the switch element 12 through the driver circuit 18 and the DC power source 17 to the source 12S of the switch element 12.
  • this current path is referred to as an on-time gate current path Rg1.
  • the switch element 12 When the switch element 12 is switched to the OFF state, it passes through the driver circuit 18 from the gate 12G of the switch element 12 and reaches the source 12S of the switch element 12.
  • the harmonic current path forms a loop-shaped current path from the gate 12G of the switch element 12 through the driver circuit 18 to the source 12S of the switch element 12.
  • this current path is referred to as an off-time gate current path Rg2.
  • the on-gate current path Rg1 and the off-gate current path Rg2 are collectively referred to as a gate current path Rg.
  • the gate current path Rg when simply referred to as the gate current path Rg, it refers to the on-time gate current path Rg1 when the switch element 12 switches to the on state, and refers to the off-time gate current path Rg2 when the switch element 12 switches to the off state. .
  • an equivalent circuit corresponding to the boost chopper device 1 is obtained for the above harmonic current. Since the smoothing capacitors of the main current path Rm and the gate current path Rg can be approximated to generally have a sufficient capacitance with respect to the harmonic current, it is possible to eliminate a short circuit. On the other hand, the main current path Rm and the gate current path Rg share a part of the current path near the source 12S of the switch element 12, and the magnetic coupling between the paths cannot be ignored. Therefore, in the step-up chopper device 1, as shown in FIG. 2, an equivalent circuit in which the main current path Rm and the gate current path Rg are regarded as a transformer 30 including an inductor 31 and an inductor 32 and having self-inductance and mutual inductance. Can be expressed as
  • a self-inductance Ld ′ and a self-inductance Lg ′ exist in the main current path Rm and the gate current path Rg, respectively. Therefore, the transformer 30 shown in FIG. 2 can be replaced with a T-type equivalent circuit 40 configured by connecting one ends of the inductors 41, 42, and 43 as shown in FIG.
  • the inductances of the inductors 41, 42, and 43 are expressed as Ls, Ld, and Lg, respectively
  • the inductances Ld and Lg of the inductors 42 and 43 are expressed by the following equations (4) and (5).
  • electrostatic capacitances parasitic between the terminals of the switch element 12 are shown as capacitors 51, 52, and 53.
  • the capacitances of the capacitors 51, 52, and 53 are denoted as Cgs, Cds, and Cgd, respectively.
  • the parasitic resistance of the wiring and the parasitic resistance of the driver circuit 18 and the smoothing capacitor are ignored.
  • inductances Lg, Ld, and Ls parasitic on the wiring are converted into the equivalent circuit shown in FIG. 4 by using Y- ⁇ conversion. Can be converted.
  • the equivalent circuit shown in FIG. 4 is configured such that a capacitor and an inductor connected in parallel with each other are connected between the terminals of the switch element 12 between the terminals of the switch element 12.
  • a parallel circuit 71 including a capacitor 51 and an inductor 61 connected in parallel to each other is connected between the gate 12G and the source 12S of the switch element 12.
  • a parallel circuit 72 including a capacitor 52 and an inductor 62 connected in parallel to each other is connected between the drain 12D and the source 12S of the switch element 12.
  • a parallel circuit 73 including a capacitor 53 and an inductor 63 connected in parallel to each other is connected between the gate 12G and the drain 12D of the switch element 12.
  • the inductances of the inductors 61, 62, and 63 are expressed as Lgs, Lds, and Lgd, respectively.
  • Barkhausen circuit is a typical model of circuit oscillation. In order for the Barkhausen circuit to operate stably without oscillation, the Barkhausen circuit must satisfy any one of the following first to fourth stable operation conditions.
  • the first stable operation condition is that the impedance Zgs is inductive reactance (reactance is a positive value), and the impedance Zds is capacitive reactance (reactance is a negative value).
  • the second stable operation condition is that the impedance Zgs is capacitive reactance (reactance is a negative value), and the impedance Zds is inductive reactance (reactance is a positive value).
  • the third stable operation condition is that both the impedance Zgs and the impedance Zgd are inductive reactances.
  • the fourth stable operation condition is that both impedance Zgs and impedance Zgd are capacitive reactances.
  • the impedances Zds, Zgd, and Zgs are impedances of the parallel circuits 71, 72, and 73, and therefore are determined to be inductive or capacitive according to the frequency of the harmonic current. Specifically, it is inductive when the frequency is lower than the resonance frequency, and capacitive when it is higher than the resonance frequency.
  • Resonance frequencies fgs, fds, and fgd are resonance frequencies of impedances Zgs, Zds, and Zgd, respectively.
  • the resonance frequency fgs is equal to or lower than the resonance frequency fds (fgs ⁇ fds)
  • stable operation is possible in the entire frequency band only when the relationship of fgs ⁇ fgd ⁇ fds is established.
  • the parasitic inductance of the gate current path Rg (that is, the on-time gate current path Rg1) when the switch element 12 is in the ON state is denoted as L′ g_on.
  • the parasitic inductance of the gate current path Rg (that is, the off-state gate current path Rg2) when the switch element 12 is in the OFF state is expressed as L′ g_off.
  • Lg_on and Lg_off are defined by the relational expressions shown in the following expressions (13) and (14).
  • the step-up chopper device 1 is mounted so that the following expression (15) and the following expression (16) are satisfied in order to satisfy the relations of the expressions (11) and (12).
  • the parasitic capacitances Cgs, Cds, and Cgd are generally not necessarily constant values and depend on voltage. For this reason, the parasitic capacitance is defined as follows. That is, the capacitance C ′ with respect to a minute AC current is a function of the DC voltage V applied to both ends.
  • the parasitic capacitance C is used to change the terminal voltage as shown in the following equation (17). What is necessary is just to define that the electric power input to the parasitic capacitance is divided by half the square of the amount of change in voltage.
  • the approach applied to the step-up chopper device 1 is based on the concept that since the switching noise is self-amplified, a chain malfunction may occur even if the switching noise is small, and the self-amplifying function needs to be removed. Yes.
  • the idea that noise is self-amplified by the operation of a semiconductor switch is a unique concept that is completely unprecedented in power electronics. This is because a semiconductor switch used in the power conversion technology is used in either an on state or an off state and does not have an analog amplification function in any state.
  • the semiconductor switch since the semiconductor switch is turned on or off, it does not have an amplification function. However, in the step-up chopper device 1, the semiconductor switch is in a state where it is neither on nor off at the transitional moment of switching, and the present application pays attention to the fact that it can operate as an analog circuit at this moment.
  • the step-up chopper device 1 configured as described above includes a switch element 12, a capacitor 13, a diode 11, a main current path Rm, and a gate current path Rg.
  • the switch element 12 is electrically connected between the pair of drains 12D and the source 12S in accordance with the voltage or current applied to the gate 12G, either in a conductive state or in a non-conductive state. Switch to either.
  • the capacitor 13 is connected in series with the switch element 12.
  • the diode 11 is connected in series with the switch element 12.
  • the main current path Rm is a current path in which an AC component of current flows through the diode 11 and the capacitor 13 between the drain 12D and the source 12S when the switch element 12 switches between the conductive state and the non-conductive state. It is.
  • the gate current path Rg is a current path in which an alternating current component flows between the gate 12G and the source 12S through the outside of the switch element 12 when the switch element 12 switches between the conductive state and the non-conductive state. It is.
  • the boost chopper device 1 is mounted so that the first division value is a value between the second division value and the third division value when the switch element 12 is switched to either the conductive state or the non-conductive state. Has been.
  • the mutual inductance between the main current path Rm and the gate current path Rg is the inductance Ls
  • the difference between the self inductance and the inductance Ls of the main current path Rm is the inductance Ld
  • the difference between the self inductance and the inductance Ls of the gate current path Rg is It is an inductance Lg.
  • the capacitance between the gate 12G and the drain 12D is the capacitance Cgd
  • the capacitance between the gate 12G and the source 12S is the capacitance Cgs
  • the capacitance between the drain 12D and the source 12S Is the capacitance Cds.
  • a value obtained by dividing the inductance Ls by the capacitance Cgd is a first divided value
  • a value obtained by dividing the inductance Ld by the capacitance Cgs is a second divided value
  • a value obtained by dividing the inductance Lg by the capacitance Cds is a third value. Divide value.
  • the boost chopper device 1 configured as described above is one of the first to fourth stable operation conditions of the Barkhausen circuit in the entire frequency band when the switch element 12 is switched to either the conductive state or the non-conductive state. Is established. Thereby, the boost chopper device 1 can suppress the self-excited oscillation of the voltage of the drain 12D of the switch element 12.
  • the boost chopper device 1 corresponds to a power converter
  • the switch element 12 corresponds to a first switch element
  • the diode 11 corresponds to a rectifier element
  • the gate current path Rg corresponds to a sub-current path.
  • the drain 12D is a first energizing electrode
  • the source 12S is a second energizing electrode
  • the gate 12G is a control electrode.
  • the inductance Ls corresponds to the first inductance
  • the inductance Ld corresponds to the second inductance
  • the inductance Lg corresponds to the third inductance
  • the capacitance Cgd corresponds to the first capacitance
  • the capacitance Cgs corresponds to the second capacitance
  • the capacitance Cds corresponds to the third capacitance
  • the boost chopper device 1 of the second embodiment is the same as that of the first embodiment except that a semiconductor package 90, capacitors 91 and 92, and jumpers 93 and 94 are added.
  • the semiconductor package 90 has the switch element 12, capacitors 91 and 92, and jumpers 93 and 94 sealed therein.
  • the semiconductor package 90 includes a drain terminal 96, a gate terminal 97, and a source terminal 98.
  • the drain terminal 96 is a terminal for connecting to the drain 12 ⁇ / b> D of the switch element 12.
  • the gate terminal 97 is a terminal for connecting to the gate 12G of the switch element 12.
  • the source terminal 98 is a terminal for connecting to the source 12S of the switch element 12.
  • the capacitors 91 and 92 have one end connected to the drain 12D of the switch element 12 and the other end connected to the gate 12G of the switch element 12.
  • the jumper 93 is provided in the energization path between the other end of the capacitor 91 and the gate 12G of the switch element 12, and interrupts the energization path.
  • the jumper 94 is provided in the energization path between the other end of the capacitor 92 and the gate 12G of the switch element 12, and interrupts the energization path.
  • the switch element 12, the capacitors 91 and 92, and the jumpers 93 and 94 are sealed in the semiconductor package 90.
  • jumpers 93 and 94 are provided so as to be exposed by a recess 99 formed on the surface of the semiconductor package 90 as shown in FIG.
  • the semiconductor package 90 configured as described above includes capacitors 91 and 92 connected between the drain 12D and the gate 12G, and determines whether or not the capacitors 91 and 92 are connected between the drain 12D and the gate 12G. By selecting with the jumpers 93 and 94, the value of the capacitance Cgd can be changed so that the first division value is between the second division value and the third division value.
  • the boost chopper device 1 when configuring the boost chopper device 1 using the semiconductor package 90, when the wiring cannot be freely arranged, the first division value is set to a value between the second division value and the third division value.
  • the value of the capacitance Cgd can be changed by an operation from the outside of the semiconductor package 90. For this reason, the step-up chopper device 1 configured using the semiconductor package 90 can suppress self-excited oscillation of the voltage of the drain terminal 96.
  • the capacitors 91 and 92 need only have a small capacitance, and as a result, the capacitors 91 and 92 can be small in size. As a result, an increase in the size of the semiconductor package 90 due to the addition of the capacitors 91 and 92 can be suppressed.
  • the semiconductor package 90 corresponds to a device part
  • the capacitors 91 and 92 and the jumpers 93 and 94 correspond to a change device
  • the capacitors 91 and 92 correspond to an interelectrode capacitor.
  • the step-up chopper device 1 according to the third embodiment is the same as the second embodiment except that short-circuit patterns 101 and 102 are added instead of the jumpers 93 and 94 as shown in FIG.
  • the short-circuit pattern 101 is provided in the energization path between the other end of the capacitor 91 and the gate 12G of the switch element 12, and communicates with the energization path.
  • the short-circuit pattern 102 is provided in the energization path between the other end of the capacitor 92 and the gate 12G of the switch element 12, and communicates with the energization path.
  • the capacitance of the capacitor 91 added between the gate 12G and the source 12S of the switch element 12 can be removed.
  • the electrostatic capacitance of the capacitor 92 added between the gate 12G and the source 12S of the switch element 12 can be removed by cutting the short-circuit pattern 102.
  • the semiconductor package 90 configured as described above includes capacitors 91 and 92 connected between the drain 12D and the gate 12G, and determines whether or not the capacitors 91 and 92 are connected between the drain 12D and the gate 12G. By selecting the short-circuit patterns 101 and 102, the value of the capacitance Cgd can be changed so that the first division value is a value between the second division value and the third division value.
  • the capacitors 91 and 92 need only have a small capacitance, and as a result, the capacitors 91 and 92 can be small in size. As a result, an increase in the size of the semiconductor package 90 due to the addition of the capacitors 91 and 92 can be suppressed.
  • the capacitors 91 and 92 and the short-circuit patterns 101 and 102 correspond to a changing device.
  • the boost chopper device 1 of the fourth embodiment is the same as that of the second embodiment except that switch elements 111 and 112 and selection terminals 116 and 117 are added instead of the jumpers 93 and 94. is there.
  • the switch element 111 is provided in an energization path between the other end of the capacitor 91 and the gate 12G of the switch element 12, and is either in an on state in which the energization path is communicated or in an off state in which the energization path is interrupted It is driven to become a state.
  • the switch element 112 is provided in an energization path between the other end of the capacitor 92 and the gate 12G of the switch element 12, and is either in an on state communicating with the energization path or in an off state interrupting the energization path. It is driven to become a state.
  • the selection terminal 116 is connected to the gate of the switch element 111.
  • the selection terminal 117 is connected to the gate of the switch element 112.
  • the semiconductor package 90 configured as described above includes capacitors 91 and 92 connected between the drain 12D and the gate 12G, and determines whether or not the capacitors 91 and 92 are connected between the drain 12D and the gate 12G. By selecting with the switch elements 111 and 112, the value of the capacitance Cgd can be changed so that the first division value is between the second division value and the third division value.
  • the capacitors 91 and 92 need only have a small capacitance, and as a result, the capacitors 91 and 92 can be small in size. As a result, an increase in the size of the semiconductor package 90 due to the addition of the capacitors 91 and 92 can be suppressed.
  • the capacitors 91 and 92 and the switch elements 111 and 112 correspond to a changing device.
  • the step-up chopper device 1 includes lead lines 121, 122, 123, 124 and lead terminals 126, 127, 128, 129 instead of capacitors 91, 92 and jumpers 93, 94. Except for the added points, the second embodiment is the same as the second embodiment.
  • connection points CP1, CP2, CP3, and CP4 are provided on the wiring W1 between the source terminal 98 and the source 12S of the switch element 12. Further, the connection points CP1, CP2, CP3, and CP4 are arranged such that the connection points CP1, CP2, CP3, and CP4 are arranged in order from the shortest distance to the source 12S of the switch element 12 along the wiring W1. Is placed on top.
  • the other ends of the lead lines 121, 122, 123, and 124 are connected to the lead terminals 126, 127, 128, and 129, respectively.
  • the semiconductor package 90 configured as described above selects any one of the lead lines 121, 122, 123, and 124, and changes the length of the wiring shared by the main current path Rm and the gate current path Rg. Thus, the value of the inductance Ls can be changed.
  • the boost chopper device 1 when configuring the boost chopper device 1 using the semiconductor package 90, when the wiring cannot be freely arranged, the first division value is set to a value between the second division value and the third division value.
  • the value of the inductance Ls can be changed by an operation from the outside of the semiconductor package 90. For this reason, the step-up chopper device 1 configured using the semiconductor package 90 can suppress self-excited oscillation of the voltage of the drain terminal 96.
  • the inductance Ls is small, the distance between the source 12S of the switch element 12 and the connection points CP1, CP2, CP3, CP4 can be shortened in order to adjust the inductance Ls.
  • the connection points CP1, CP2, CP3, and CP4 on the wiring W1 it is possible to prevent the wiring length of the wiring W1 from increasing and the physique of the semiconductor package 90 from increasing.
  • connection points CP1, CP2, CP3, and CP4 and the lead lines 121, 122, 123, and 124 correspond to changing devices.
  • the step-up chopper device 1 is the second except that lead lines 131 and 132 and lead terminals 136 and 137 are added instead of the capacitors 91 and 92 and the jumpers 93 and 94. This is the same as the embodiment.
  • connection point CP11 is provided on the wiring W1 between the source terminal 98 and the source 12S of the switch element 12.
  • lead wires 131 and 132 are connected to the lead terminals 136 and 137, respectively.
  • the lead-out line 131 is arranged so as to be close to the wiring W1 in a part of the wiring up to the connection point CP11 along the lead-out line 131.
  • the lead line 132 is arranged so as to extend in a direction opposite to the direction from the connection point CP11 to the source terminal 98 in a part of the wiring along the lead line 132 to the connection point CP11.
  • one of the lead lines 131 and 132 is selected, and the polarity of the magnetic coupling between the main current path Rm and the gate current path Rg is changed to thereby change the inductance.
  • the value of Ls can be changed.
  • the inductance Ls is small, the magnetic coupling for adjusting the inductance Ls is small, and as a result, the lead lines 131 and 132 can be shortened. Thereby, it is possible to suppress an increase in the size of the semiconductor package 90 due to the addition of the lead lines 131 and 132.
  • the lead lines 131 and 132 correspond to changing devices.
  • the step-up chopper device 1 of the seventh embodiment is the same as the first embodiment except that a loop wiring 141, a jumper 142, a drain terminal 143, and a source terminal 144 are added.
  • the switch element 12, the DC power supply 17, the driver circuit 18, the loop wiring 141, the jumper 142, the drain terminal 143, and the source terminal 144 constitute a semiconductor module 140.
  • the loop wiring 141 is a loop-shaped wiring, and is arranged along the off-gate current path Rg2 on the inner peripheral side of the off-gate current path Rg2.
  • the jumper 142 is provided on the loop wiring 141 and blocks the energization path of the loop wiring 141. Therefore, by short-circuiting the jumper 142, the loop wiring 141 forms a loop-shaped current path.
  • an induced current that generates a magnetic flux for canceling the magnetic flux generated in the off-state gate current path Rg2 flows through the current path of the loop wiring 141. For this reason, as the jumper 142 is short-circuited and opened, the value of the inductance Lg changes.
  • the drain terminal 143 is a terminal for connecting to the drain 12D of the switch element 12.
  • the source terminal 144 is a terminal for connecting to the source 12S of the switch element 12.
  • the semiconductor module 140 configured as described above uses the loop wiring 141 and the jumper 142 to select one of short-circuiting and opening of the loop-shaped wiring adjacent along the off-state gate current path Rg2.
  • the value of the inductance Lg can be changed so that the 1 division value becomes a value between the second division value and the third division value.
  • the boost chopper device 1 when configuring the boost chopper device 1 using the semiconductor module 140, when the wiring cannot be freely arranged, the first division value is set to a value between the second division value and the third division value. In addition, the value of the inductance Lg can be changed by an operation from the outside of the semiconductor module 140. For this reason, the boost chopper device 1 configured using the semiconductor module 140 can suppress the self-excited oscillation of the voltage of the drain terminal 143.
  • the semiconductor module 140 corresponds to an apparatus component
  • the loop wiring 141 and the jumper 142 correspond to a change device.
  • the step-up chopper device 1 includes jumpers 151, 152, 153, and 154 instead of the loop wiring 141 and the jumper 142, and includes the driver circuit 18 and the switch element 12.
  • the seventh embodiment is the same as the seventh embodiment except that the gate wiring with the gate 12G is changed.
  • the switch element 12, the DC power supply 17, the driver circuit 18, the drain terminal 143, the source terminal 144, and the jumpers 151, 152, 153, and 154 constitute a semiconductor module 140.
  • the gate wiring is composed of wiring W2 and wiring W3.
  • One end of the wiring W2 is connected to the gate 12G of the switch element 12, and the other end is not connected.
  • One end of the wiring W3 is connected to the driver circuit 18, and the other end is not connected.
  • Each of jumpers 151, 152, 153, and 154 has one end connected to connection points CP21, CP22, CP23, and CP24, and the other end connected to connection points CP26, CP27, CP28, and CP29.
  • connection points CP21, CP22, CP23, and CP24 are arranged on the wiring W2 so as to be the connection points CP21, CP22, CP23, and CP24 in order from the longest distance to the gate 12G of the switch element 12 along the wiring W2.
  • the connection points CP26, CP27, CP28, CP29 are arranged on the wiring W3 so as to be the connection points CP26, CP27, CP28, CP29 in order from the shortest distance to the driver circuit 18 along the wiring W3. Yes.
  • the first divided value is obtained by changing the length of the wiring configuring the gate current path Rg using the wirings W2 and W3 and the jumpers 151, 152, 153, and 154.
  • the value of the inductance Lg can be changed so as to be a value between the second divided value and the third divided value.
  • the wirings W2, W3 and the jumpers 151, 152, 153, 154 correspond to a changing device.
  • the step-up chopper device 1 of the ninth embodiment includes jumpers 161, 162, 163, 164, 165, a resistor 166, a gate terminal 167, a voltage input terminal 168, a voltage output terminal 169, and a ground terminal 170.
  • the second embodiment is the same as the first embodiment except that the added point and the wiring between the diode 11 and the capacitor 13 are changed.
  • the diode 11, the switch element 12, the capacitor 13, the jumpers 161, 162, 163, 164, 165, the resistor 166, the gate terminal 167, the voltage input terminal 168, the voltage output terminal 169, and the ground terminal 170 constitute the semiconductor module 160. ing.
  • the wiring between the diode 11 and the capacitor 13 is composed of a wiring W4 and a wiring W5.
  • One end of the wiring W4 is connected to the cathode of the diode 11, and the other end is not connected.
  • the wiring W5 has one end connected to the capacitor 13 and the other end not connected.
  • Each of the jumpers 161, 162, 163, 164, and 165 has one end connected to the connection points CP31, CP32, CP33, CP34, and CP35 and the other end connected to the connection points CP36, CP37, CP38, CP39, and CP40.
  • connection points CP31, CP32, CP33, CP34, and CP35 are arranged such that the connection points CP31, CP32, CP33, CP34, and CP35 are arranged in order from the shortest distance to the cathode of the diode 11 along the wiring W4. Is placed on top.
  • the connection points CP36, CP37, CP38, CP39, and CP40 are arranged on the wiring W5 so as to be the connection points CP36, CP37, CP38, CP39, and CP40 in order from the shortest distance to the capacitor 13 along the wiring W5. Has been placed.
  • the resistor 166 has one end connected to the connection point between the cathode of the diode 11 and the voltage output terminal 169, and the other end connected to the connection point CP31.
  • the gate terminal 167 is a terminal for connecting the driver circuit 18 and the gate 12G of the switch element 12.
  • the voltage input terminal 168 is a terminal for connecting the inductor 15 and the drain 12D of the switch element 12.
  • the voltage output terminal 169 and the ground terminal 170 are terminals for connection to one end and the other end of the capacitor 14, respectively.
  • the first division is performed by changing the length of the wiring configuring the main current path Rm using the wirings W4 and W5 and the jumpers 161, 162, 163, 164, and 165.
  • the value of the inductance Ld can be changed so that the value is between the second divided value and the third divided value.
  • the boost chopper device 1 when configuring the boost chopper device 1 using the semiconductor module 160, when the wiring cannot be freely arranged, the first division value is set to a value between the second division value and the third division value.
  • the value of the inductance Ld can be changed by an operation from the outside of the semiconductor module 160. For this reason, the step-up chopper device 1 configured using the semiconductor module 160 can suppress self-excited oscillation of the voltage of the drain 12D of the switch element 12.
  • the semiconductor module 160 corresponds to the device component
  • the wirings W4 and W5 and the jumpers 161, 162, 163, 164, and 165 correspond to the changing device.
  • this indication is not limited to the above-mentioned embodiment, and can take various forms, as long as it belongs to the technical scope of this indication.
  • the present disclosure is applied to a unidirectional boost chopper, but the present disclosure may be applied to a synchronous rectification boost chopper device.
  • the synchronous rectification step-up chopper device 201 is different from the diode 11 in that a switch element 211 is added and a DC power supply 212 and a driver circuit (DRV) 213 are newly added. This is the same as the step-up chopper device 1.
  • the switch element 211 is an N-channel field effect transistor, and has a drain connected to the output terminal 19 and a source connected to the drain 12D of the switch element 12.
  • the DC power supply 212 has a positive electrode connected to the gate of the switch element 211 via the driver circuit 213 and a negative electrode connected to the source of the switch element 211.
  • the driver circuit 213 is in an ON state in which an energization path between the positive electrode of the DC power supply 212 and the gate of the switch element 211 is communicated, and between the negative electrode of the DC power supply 212 and the gate of the switch element 211 by blocking the energization path It is driven so as to be in any state of an off state communicating with the energization path.
  • the on-time gate current path Rg1 and the off-time gate current path Rg2 for the switch element 12 and the on-time gate current path Rg11 and the off-time gate current for the switch element 211.
  • a route Rg12 is formed.
  • the synchronous rectification step-up chopper device 201 is mounted so that the equations (15) and (16) are established even between the on-gate current path Rg11, the off-gate current path Rg12, and the main current path Rm. It is good to do so.
  • the switch element 211 corresponds to a second switch element.
  • equations (15) and (16) are also established between the on-time gate current path Rg21, the off-time gate current path Rg22, and the main current path Rm. It is better to be implemented as follows.
  • the synchronous rectification step-down chopper device 401 is similar to the synchronous rectification step-up chopper device 201 in that the on-state gate current path Rg21 and the off-state gate current path Rg22 for one switch element and the other switch An on-time gate current path Rg31 and an off-time gate current path Rg32 for the element are formed.
  • the synchronous rectification step-down chopper device 401 is mounted so that the equations (15) and (16) are also established between the on-time gate current path Rg31, the off-time gate current path Rg32, and the main current path Rm. It is good to do so.
  • the switch element 12 is a field effect transistor.
  • the switch element may be a GaN-FET or any switching device such as IGBT, BJT, JFET, or GaN-HEMT.
  • the capacitance Cgd is changed.
  • the method for changing the capacitance shown in the second, third, and fourth embodiments is the capacitance Cgs.
  • the present invention is also applicable when changing the capacitance Cds.
  • the capacitors 91 and 92 sealed in the package are used as the capacitance.
  • the capacitor formed on the semiconductor chip or the parasitic capacitance due to PN reverse connection is used. Etc. may be used.
  • the value of the inductance Ls is changed by changing the polarity of the magnetic coupling.
  • the strength of the magnetic coupling may be changed.
  • the lead-out line 132 is disposed so as to be close to the wiring W1 in a part of the wiring up to the connection point CP11 along the lead-out line 132, and the wiring W1 is more than the lead-out line 131. And the close distance may be short.
  • the loop wiring 141 is arranged along the off-gate current path Rg2 on the inner peripheral side of the off-gate current path Rg2.
  • the loop wiring 141 may be arranged along the off-gate current path Rg2 on the outer peripheral side of the off-gate current path Rg2.
  • the loop wiring 141 may be arranged along the off-state gate current path Rg2 on the upper surface side or the lower surface side of the plane including the off-state gate current path Rg2.
  • the value of the inductance Lg is changed by arranging the loop wiring 141 along the off-state gate current path Rg2.
  • the value of the inductance Ld may be changed by arranging the loop wiring so as to be close to each other along the main current path Rm.
  • the functions of one component in the above embodiment may be distributed as a plurality of components, or the functions of a plurality of components may be integrated into one component.
  • a part of the configuration of the above embodiment may be omitted, or may be replaced with a known configuration having the same function.
  • at least a part of the configuration of the above embodiment may be added to or replaced with the configuration of the other embodiment.
  • all the aspects included in the technical idea specified only by the wording described in the claim are embodiment of this indication.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

　L'invention concerne un circuit de conversion d'énergie électrique. Un dispositif hacheur élévateur de tension (1) comprend un élément de commutation (12), un condensateur (13), une diode (11), un trajet de courant principal (Rm) et un trajet de courant de gâchette (Rg). Le trajet de courant principal est un trajet de courant dans lequel un courant circule à travers le condensateur entre le drain et la source de l'élément de commutation. Le trajet de courant de gâchette est un trajet de courant dans lequel un courant circule à travers l'extérieur de l'élément de commutation entre la gâchette et la source de l'élément de commutation. Le dispositif hacheur élévateur de tension est mis en œuvre de sorte que Ls/Cgd prend une valeur comprise entre Ld/Cgs et Lg/Cds. Ls désigne l'inductance mutuelle du trajet de courant principal et du trajet de courant de gâchette, Ld désigne la différence entre l'inductance propre du trajet de courant principal et Ls, Lg désigne la différence entre l'inductance propre du trajet de courant de gâchette et Ls, Cgd désigne la capacité statique entre la gâchette et le drain, Cgs désigne la capacité statique entre la gâchette et la source, et CDs désigne la capacité statique entre le drain et la source. La vibration auto-excitée d'une différence de potentiel entre les deux extrémités de l'élément de commutation peut ainsi être supprimée.
PCT/JP2015/004493 2014-09-22 2015-09-04 Dispositif de conversion d'énergie électrique et composant de dispositif WO2016047053A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-192967 2014-09-22
JP2014192967A JP6365172B2 (ja) 2014-09-22 2014-09-22 電力変換装置および装置部品

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Publication number Priority date Publication date Assignee Title
JP6238257B1 (ja) * 2016-06-28 2017-11-29 三菱電機株式会社 電力変換装置
JP6731993B2 (ja) * 2018-11-19 2020-07-29 三菱電機株式会社 電力変換装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147254A (ja) * 2008-12-18 2010-07-01 Renesas Electronics Corp 半導体装置
JP2013110269A (ja) * 2011-11-21 2013-06-06 Samsung Electro-Mechanics Co Ltd Ｃｍｏｓ集積回路及び増幅回路
JP2013223256A (ja) * 2012-04-12 2013-10-28 Denso Corp 回路基板及び回路基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147254A (ja) * 2008-12-18 2010-07-01 Renesas Electronics Corp 半導体装置
JP2013110269A (ja) * 2011-11-21 2013-06-06 Samsung Electro-Mechanics Co Ltd Ｃｍｏｓ集積回路及び増幅回路
JP2013223256A (ja) * 2012-04-12 2013-10-28 Denso Corp 回路基板及び回路基板の製造方法

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