WO2016042740A1 - Dispositif et procédé pour la fabrication d'eau avec un gaz dissous - Google Patents

Dispositif et procédé pour la fabrication d'eau avec un gaz dissous Download PDF

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Publication number
WO2016042740A1
WO2016042740A1 PCT/JP2015/004586 JP2015004586W WO2016042740A1 WO 2016042740 A1 WO2016042740 A1 WO 2016042740A1 JP 2015004586 W JP2015004586 W JP 2015004586W WO 2016042740 A1 WO2016042740 A1 WO 2016042740A1
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WO
WIPO (PCT)
Prior art keywords
gas
water
pressure
flow rate
ozone
Prior art date
Application number
PCT/JP2015/004586
Other languages
English (en)
Japanese (ja)
Inventor
卓 小澤
原田　稔
宗人 高橋
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2014240990A external-priority patent/JP2016064386A/ja
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to KR1020177007266A priority Critical patent/KR20170058928A/ko
Priority to SG11201702242PA priority patent/SG11201702242PA/en
Priority to EP15842759.1A priority patent/EP3195926A4/fr
Priority to CN201580050402.5A priority patent/CN106714954A/zh
Priority to US15/511,803 priority patent/US20170282132A1/en
Publication of WO2016042740A1 publication Critical patent/WO2016042740A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/717—Feed mechanisms characterised by the means for feeding the components to the mixer
    • B01F35/7176—Feed mechanisms characterised by the means for feeding the components to the mixer using pumps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F21/00—Dissolving
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/30—Injector mixers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/712—Feed mechanisms for feeding fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/80—Forming a predetermined ratio of the substances to be mixed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/10—Preparation of ozone
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/10—Preparation of ozone
    • C01B13/11—Preparation of ozone by electric discharge
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • a cleaning method in addition to the “batch processing method” in which a plurality of silicon wafers are dipped and cleaned at the same time, chemical cleaning and ultrapure water cleaning are performed for each wafer corresponding to products of low-volume production.
  • a “single wafer processing method” is used.
  • the single wafer processing method has a longer cleaning process time (takt time) per wafer than the batch processing method, and the amount of cleaning liquid used is increased. Therefore, it is required to shorten the tact time and reduce the amount of cleaning liquid used. It has been.
  • takt time cleaning process time
  • an advanced cleaning process is performed in which a plurality of functional waters and chemicals are used alone or simultaneously to switch the cleaning process in a short time. .
  • the conventional ozone water supply device is a circulation type that circulates ozone water (unused ozone water) to be reused, the temperature rise or contamination of ozone water due to the circulation of ozone water (unused ozone water) It was necessary to take measures against the outbreak. Therefore, it has been desired to develop a technology for producing ozone water as much as it is required at the point of use.
  • the gas-dissolved water production apparatus of the present invention includes a concentration measuring unit that measures the concentration of the gas-dissolved water, and an actual measured value of the concentration of the gas-dissolved water based on the concentration of the gas-dissolved water measured by the concentration measuring unit.
  • a control unit that controls the flow rate of the gas so as to reduce the deviation from the target value.
  • the flow rate of the gas is controlled based on the concentration of the dissolved gas water, and the deviation between the measured value of the dissolved gas water and the target value can be reduced (displaced). Therefore, even when the measured value of the dissolved gas concentration tends to be different from the target value, such as when the operation is restarted after not operating for a certain period (for example, several days), the dissolved gas concentration close to the target value is likely to occur. Can be manufactured.
  • the gas dissolved water generating unit may include a mixer that mixes gas and water using the Venturi effect.
  • the gas dissolved water production apparatus of the present invention includes an ozone gas generation unit that generates ozone gas
  • the ozone gas generation unit includes an electrode for discharge used for generating ozone gas
  • the holding member that holds the electrode is stainless steel. It may be made of steel and have a wall thickness of 10 mm or more.
  • the pressure of water is controlled and supplied to the gas-dissolved water generating unit so that the pressure of the gas-dissolved water supplied to the use point is constant, as in the above-described manufacturing apparatus. Since the gas flow rate is controlled according to the water flow rate, the gas-dissolved water is produced as much as required at the use point. For example, when a large amount of gas-dissolved water is required at the use point, the pressure of the gas-dissolved water supplied to the use point is fixed, so that a large amount of water is supplied to the gas-dissolved water generating unit. Thus, a large amount of gas is supplied to the gas-dissolved water generating unit according to the amount of the water. As a result, a large amount of gas-dissolved water is produced.
  • FIG. 2 is a plan view of the discharge body 70
  • FIG. 3 is a cross-sectional view of the discharge body 70.
  • the discharge body 70 of the ozone gas generation unit 7 is disposed between a pair of the low-voltage electrode 71 and the high-voltage electrode 72 having circular electrode surfaces facing each other and the electrode surfaces facing each other.
  • a dielectric 73 and a disc-shaped space 74 are provided.
  • the disk-shaped space 74 is a space where a gentle discharge occurs between the opposing electrode surfaces.
  • dielectric 73 When clean ozone gas such as that used in semiconductor manufacturing is required, the material of dielectric 73 is sapphire, which is a clean material. However, when high purity is not required, dielectric 73 is made of alumina ceramics. It can form with ceramic materials, such as.
  • the source gas is introduced into the disc-shaped space 74 through the inlet passage 77 and the outer peripheral space 78, and flows in the disc-shaped space 74 substantially inward in the radial direction, and a central space 79 provided at the center of the low-pressure electrode 71. And are guided radially outward through the guide passage 80.
  • the source gas may be flowed radially outward in the disk-shaped space 74 instead of being flowed substantially radially inward. In that case, the raw material gas is first supplied to the central space 79 through the guide passage 80, flows in the disk-shaped space 74 substantially outward in the radial direction, and is guided to the inlet passage 77 through the outer peripheral space 78.
  • a first gas (O2 gas) and a second gas (CO2 gas or N2 gas) as raw materials are supplied as sources. Supply from 2 and 3.
  • the flow rate of the gas (first gas and second gas) is controlled by the flow rate controllers 4 and 5.
  • water (ultra pure water) as a raw material is supplied from a supply source 9.
  • the flow rate of water is measured by the flow meter 12.
  • the flow rate controllers 4 and 5 control the flow rate of the gas according to the flow rate of water measured by the flow meter 12, as indicated by broken line arrows in FIG.
  • the concentration required for the use point 19 is constant ( (Constant pressure) ozone water can be supplied. Therefore, it is suitable for a multi-chamber type single wafer cleaning apparatus.
  • the ozone water manufacturing apparatus 1 of this Embodiment since it is not necessary to circulate ozone water, it is not necessary to take measures against the temperature rise of ozone water by a circulation and generation
  • gas and water can be efficiently mixed by utilizing the Venturi effect.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Hydrology & Water Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

　L'invention concerne un dispositif (1) pour la fabrication d'eau ozonée, muni de dispositifs de régulation du débit (4,5) pour réguler le débit du gaz utilisé comme matière première, un débitmètre (12) pour mesurer le débit de l'eau utilisée comme matière première, une pompe de surpression (13) pour réguler la pression de l'eau, une unité de génération d'eau ozonée (8) pour mélanger l'ozone gazeux et l'eau et produire de l'eau ozonée, et un capteur de pression (17) pour mesurer la pression de l'eau ozonée qui alimente un point d'utilisation (19). La pompe de surpression (13) régule la pression de l'eau de telle sorte que la pression de l'eau ozonée mesurée par le capteur de pression (17) est uniforme, et les dispositifs de régulation du débit (4,5) régulent le débit du gaz en fonction du débit de l'eau mesuré par le débitmètre (12).
PCT/JP2015/004586 2014-09-18 2015-09-09 Dispositif et procédé pour la fabrication d'eau avec un gaz dissous WO2016042740A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020177007266A KR20170058928A (ko) 2014-09-18 2015-09-09 가스 용해수 제조 장치 및 제조 방법
SG11201702242PA SG11201702242PA (en) 2014-09-18 2015-09-09 Gas-dissolved water production device and production method
EP15842759.1A EP3195926A4 (fr) 2014-09-18 2015-09-09 Dispositif et procédé pour la fabrication d'eau avec un gaz dissous
CN201580050402.5A CN106714954A (zh) 2014-09-18 2015-09-09 气体溶解水制造装置及制造方法
US15/511,803 US20170282132A1 (en) 2014-09-18 2015-09-09 Gas-dissolved water production device and production method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-189639 2014-09-18
JP2014189639 2014-09-18
JP2014-240990 2014-11-28
JP2014240990A JP2016064386A (ja) 2014-09-18 2014-11-28 ガス溶解水製造装置および製造方法

Publications (1)

Publication Number Publication Date
WO2016042740A1 true WO2016042740A1 (fr) 2016-03-24

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PCT/JP2015/004586 WO2016042740A1 (fr) 2014-09-18 2015-09-09 Dispositif et procédé pour la fabrication d'eau avec un gaz dissous

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Country Link
WO (1) WO2016042740A1 (fr)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09906A (ja) * 1995-06-21 1997-01-07 Ishikawajima Harima Heavy Ind Co Ltd オゾン水製造装置及びその製造方法
JP2000107509A (ja) * 1998-10-02 2000-04-18 Kurita Water Ind Ltd 加圧水の製造方法、及び加圧水の製造装置
JP2002020105A (ja) * 2000-06-29 2002-01-23 Ebara Corp オゾン発生装置
JP2003334433A (ja) * 2002-05-16 2003-11-25 Kurita Water Ind Ltd 連続溶解装置、連続溶解方法及び気体溶解水供給装置
JP2008012512A (ja) * 2006-06-08 2008-01-24 Sanyo Electric Co Ltd 水オゾン混合装置、水浄化装置、オゾン水生成装置、気液混合器および逆止弁
JP2009114003A (ja) * 2007-11-02 2009-05-28 Metawater Co Ltd オゾン発生装置
JP2010207724A (ja) * 2009-03-10 2010-09-24 Yamatake Corp 気体溶解システム、気体溶解方法、および気体溶解プログラム
JP2010234298A (ja) * 2009-03-31 2010-10-21 Kurita Water Ind Ltd ガス溶解水供給装置及びガス溶解水の製造方法
JP2012196589A (ja) * 2011-03-18 2012-10-18 Sharp Corp オゾン液生成器及びその生成方法
JP2013103205A (ja) * 2011-11-16 2013-05-30 Icst:Kk 高濃度酸素水生成装置、高濃度酸素水灌水装置および高濃度酸素水生成方法
JP2014166629A (ja) * 2013-02-04 2014-09-11 Matsumura Akiko 気液混合装置、ガス溶存液、オゾン水生成システム、水処理システム及び除染方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09906A (ja) * 1995-06-21 1997-01-07 Ishikawajima Harima Heavy Ind Co Ltd オゾン水製造装置及びその製造方法
JP2000107509A (ja) * 1998-10-02 2000-04-18 Kurita Water Ind Ltd 加圧水の製造方法、及び加圧水の製造装置
JP2002020105A (ja) * 2000-06-29 2002-01-23 Ebara Corp オゾン発生装置
JP2003334433A (ja) * 2002-05-16 2003-11-25 Kurita Water Ind Ltd 連続溶解装置、連続溶解方法及び気体溶解水供給装置
JP2008012512A (ja) * 2006-06-08 2008-01-24 Sanyo Electric Co Ltd 水オゾン混合装置、水浄化装置、オゾン水生成装置、気液混合器および逆止弁
JP2009114003A (ja) * 2007-11-02 2009-05-28 Metawater Co Ltd オゾン発生装置
JP2010207724A (ja) * 2009-03-10 2010-09-24 Yamatake Corp 気体溶解システム、気体溶解方法、および気体溶解プログラム
JP2010234298A (ja) * 2009-03-31 2010-10-21 Kurita Water Ind Ltd ガス溶解水供給装置及びガス溶解水の製造方法
JP2012196589A (ja) * 2011-03-18 2012-10-18 Sharp Corp オゾン液生成器及びその生成方法
JP2013103205A (ja) * 2011-11-16 2013-05-30 Icst:Kk 高濃度酸素水生成装置、高濃度酸素水灌水装置および高濃度酸素水生成方法
JP2014166629A (ja) * 2013-02-04 2014-09-11 Matsumura Akiko 気液混合装置、ガス溶存液、オゾン水生成システム、水処理システム及び除染方法

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