WO2016037435A1 - 薄膜晶体管、阵列基板以及显示装置 - Google Patents
薄膜晶体管、阵列基板以及显示装置 Download PDFInfo
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- WO2016037435A1 WO2016037435A1 PCT/CN2014/094095 CN2014094095W WO2016037435A1 WO 2016037435 A1 WO2016037435 A1 WO 2016037435A1 CN 2014094095 W CN2014094095 W CN 2014094095W WO 2016037435 A1 WO2016037435 A1 WO 2016037435A1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Definitions
- Embodiments of the present invention relate to a thin film transistor, an array substrate, and a display device.
- the array substrate of the display device includes a base substrate, and a plurality of gate lines and data lines located inside the substrate substrate that intersect each other to define a plurality of pixel units.
- a TFT Thin Film Transistor
- a pixel electrode electrically connected to the TFT are disposed in each of the pixel units.
- the TFT of each pixel unit includes a gate on the substrate, an active layer on the gate, and are respectively located on both sides of the active layer and active with The layers partially overlap the source and drain.
- the active layer When an on-voltage is applied to the gate, the active layer is turned on, such that electrons of the source are transferred to the drain through the turned-on active layer, and the holes of the drain are made active after being turned on.
- the layer is transmitted to the source.
- a turn-off voltage is applied to the gate, the active layer is turned off, causing the transmission of electrons and holes between the source and the drain to be interrupted.
- the TFT In order to reduce the contact resistance between the source and the drain and the active layer to improve the performance of the TFT, the TFT generally further includes: a film layer located at the source and the drain and the active layer And a first ohmic contact portion located at an overlapping region of the source and the active layer and a second ohmic contact portion at an overlapping region of the drain and the active layer.
- the material of the active layer is generally an amorphous silicon semiconductor having a relatively low conductivity. Therefore, after an on-voltage is applied to the gate to turn on the active layer, the electrons of the source are poor due to the poor conductivity of the active layer.
- the mobility of the holes with the drain is relatively small, so that the on-state current of the TFT is relatively small. This makes the ratio of the on-state current of the TFT to the off-state current relatively small, resulting in the TFT not being able to efficiently drive a large-area display device, such as a large-area OLED (Organic Light-Emitting Diode).
- the material of the active layer is generally a semiconductor material having a relatively high conductivity such as a doped semiconductor, a crystallized semiconductor, or a metal oxide semiconductor.
- the conductivity of the active layer material is increased, the off-state current of the TFT is also increased while increasing the on-state current of the TFT, so that the ratio of the on-state current to the off-state current of the TFT is still relatively small. Further, the TFT is still unable to efficiently drive a large-area display device.
- the invention provides a thin film transistor, an array substrate and a display device for solving the problem that the ratio of the on-state current to the off-state current of the TFT is relatively small.
- a TFT provided by an embodiment of the present invention includes a gate, an active layer on the gate, and a source respectively located on both sides of the active layer and partially overlapping the active layer Pole and drain.
- the active layer includes: at least one first structural portion and at least one second structural portion, the material of the first structural portion is a semiconductor, and the material of the second structural portion is a set conductor, the set conductor
- the conductive property is superior to the conductive property of the semiconductor after conduction; when an on voltage is applied to the gate, the conductive path between the source and the drain includes the first structural portion And the second structural portion.
- the TFT may further include: a first ohmic contact between the film layer where the source and the drain are located and the active layer, and located at an overlapping region of the source and the active layer And a second ohmic contact portion located at an overlap region of the drain and the active layer; when the turn-on voltage is applied to the gate, the first ohmic contact is in contact with the second ohmic Between the portions, between the first ohmic contact portion and the drain electrode, and between the source electrode and the second ohmic contact portion, the first structure portion and the second structure portion .
- each of the second structural portions is embedded in one of the first structural portions; and each of the first structural portions is embedded with at least one of the second structural portions.
- the active layer may include a plurality of first structural portions and a plurality of second structural portions, and the dimensions of the first structural portion and the second structural portion are on the order of nanometers; each of the first One of the second structural portions is embedded in the structural portion.
- each of the first structural portions completely encases the second structural portion.
- the second structural portion is a nanosphere, and the second structural portion and the first structural portion completely covering the second structural portion constitute a spherical shape or a spheroidal shape; or the second structural portion is The nanorod, the second structural portion and the first structural portion completely covering the second structural portion constitute a rod shape.
- the dimensions of the first structural portion and the second structural portion may each be on the order of microns.
- the dimensions of the first structural portion are on the order of microns and the dimensions of the second structural portion are on the order of nanometers.
- the set conductor includes one of a metal, a metal composite, and an organic conductor.
- An embodiment of the present invention further provides an array substrate including any of the TFTs described above.
- the embodiment of the invention further provides a display device comprising any of the array substrates described above.
- FIG. 1a and FIG. 1b are schematic structural diagrams of a TFT according to an embodiment of the present invention.
- FIGS. 2a to 2f are schematic structural views of an active layer according to an embodiment of the present invention.
- FIG. 3 is a schematic structural view of a second structural portion completely embedded in a first structural portion according to an embodiment of the present invention
- FIG. 4 is a schematic structural view of a first structural portion completely covering a second structural portion according to an embodiment of the present invention.
- a TFT provided by an embodiment of the present invention includes a gate 1, an active layer 2 on the gate 1, and two sides of the active layer 2 and the active layer 2, respectively.
- Source 3 and drain 4 both partially overlapping;
- the active layer 2 includes: at least one first structural portion and at least one second structural portion, the first structure
- the material of the portion is a semiconductor
- the material of the second structural portion is a set conductor, and the conductive property of the set conductor is superior to the conductive property of the semiconductor after the turn-on;
- the conductive via between the source 3 and the drain 4 includes a first structure portion and a second structure portion.
- the conductive via between the source and the drain includes a first structure portion and a second structure portion, and electrons of the source are transmitted to the first structure portion and the second structure portion to The drain, the drain hole is transmitted to the source through the first structure portion and the second structure portion.
- a turn-off voltage is applied to the gate, each of the first structural portions transitions to a non-conducting state, causing the conductive paths between the source and the drain to be disconnected, thereby causing electrons and holes between the source and the drain. The transmission was interrupted.
- the off-state current of the TFT remains unchanged; the ratio of the on-state current of the TFT to the off-state current is increased, the performance of the TFT is optimized, and the possibility that the TFT can effectively drive the large-area display device is improved to some extent. .
- the structural features of the first structural portion and the second structural portion included in the active layer may be any suitable as long as the first structural portion and the second structural portion satisfying the following conditions are applicable to the present invention.
- Inventive embodiments When an on voltage is applied across the gate, the electrically conductive via between the source and the drain includes a first structural portion and a second structural portion.
- the first structural portion and the second structural portion are structurally characterized in that the source and the drain are in contact with only at least a portion of the first structural portion.
- the active layer includes: two first structural portions 21 and one second structural portion 22; the second structural portion 22 is not in contact with the source 3 and the drain 4, and both ends are One first structural portion 21 is in contact; one end of one first structural portion 21 is in contact with the second structural portion 22, the other end is in contact with the source 3, and one end of the other first structural portion 21 is in contact with the second structural portion 22, and One end is in contact with the drain 4.
- the second structural portion is not in contact with both the source and the drain, and a portion of the first structural portion is in contact with the source, and the remaining portion of the first structural portion is in contact with the drain. Since the source and drain holes are transported with a material having a better conductivity, the conductive path between the source and the drain necessarily includes the first when a turn-on voltage is applied to the gate. a structural portion and a second structural portion.
- the first structural portion and the second structural portion are structurally characterized in that the source is in contact only with at least a portion of the second structural portion, and the drain is in contact with only at least a portion of the first structural portion.
- the active layer includes: two first structural portions 21 and one second structural portion 22; one end of the second structural portion 22 is in contact with the source 3, and the other end is connected to one of the first structures.
- the other end of one of the first structural portions 21 is in contact with the other first structural portion 21; the other end of the other first structural portion 21 is in contact with the drain 4.
- the second structural portion is in contact with the source, and a portion of the first structural portion is in contact with the drain, and the remaining portion of the first structural portion is not in contact with the source and the drain; therefore, when When an on voltage is applied to the gate, the electrically conductive path between the source and the drain necessarily includes the first structural portion and the second structural portion.
- the first structural portion and the second structural portion are structurally characterized in that the source is in contact only with at least a portion of the first structural portion, and the drain is in contact with only at least a portion of the second structural portion.
- the active layer includes: two first structural portions 21 and one second structural portion 22; one end of the second structural portion 22 is in contact with the drain 4, and the other end is connected to one of the first structures.
- the other end of one of the first structural portions 21 is in contact with the other first structural portion 21; the other end of the other first structural portion 21 is in contact with the source 3.
- the second structural portion is in contact with the drain, and a portion of the first structural portion is in contact with the source, and the remaining portion of the first structural portion is not in contact with both the source and the drain. Therefore, when an on voltage is applied to the gate, the conductive path between the source and the drain necessarily includes the first structural portion and the second structural portion.
- the first structural portion and the second structural portion are structurally characterized in that the source and the drain are only in contact with at least a portion of the second structural portion, and when a turn-on voltage is applied to the gate, between the source and the drain
- the conductive path includes a first structural portion and a second structural portion.
- the active layer includes: a first structural portion 21 and two second structural portions 22; one end of one second structural portion 22 is in contact with the source 3, and the other of the second structural portion 22 is One The end is in contact with the drain 4, and both ends of the first structural portion 21 are in contact with the two second structural portions 22, respectively.
- a portion of the second structural portion is in contact with the source and another portion of the second structural portion is in contact with the drain, the first structural portion being in contact with the second structural portion. Therefore, when an on voltage is applied to the gate, the conductive via between the source and the drain includes the first structure portion and the second structure portion.
- the first structural portion and the second structural portion are structurally characterized in that each of the second structural portions is embedded in the first structural portion.
- the active layer includes: a first structural portion 21 and a second structural portion 22, wherein the second structural portion 22 is embedded in the first structural portion 21; the first structural portion 21 and the source Both the pole 3 and the drain 4 are in contact; the second structure portion 22 is not in contact with both the source 3 and the drain 4.
- each of the second structural portions is embedded in the first structural portion, and the source electrons and the drain holes are selected for transmission when the transmission is better; therefore, when the gate is When the turn-on voltage is applied to the pole, the conductive path between the source and the drain includes the first structural portion and the second structural portion.
- the TFT provided by the embodiment of the present invention further includes: a film layer between the source 3 and the drain 4 and the active layer 2, and is located at the overlap of the source 3 and the active layer 2.
- the conductive paths between the ohmic contacts 5b each include a first structural portion and a second structural portion.
- the conductive path between the source and the second ohmic contact portion includes a first structural portion and a second structural portion such that electrons of the source are transmitted to the drain through the first structural portion and the second structural portion, The holes of the drain are also transmitted to the source through the first structure portion and the second structure portion.
- each of the first structural portions When a turn-off voltage is applied to the gate, each of the first structural portions is transformed into a non-conductive state such that it is located between the source and the drain, between the first ohmic contact portion and the second ohmic contact portion, and is located at the first ohm
- the conductive path between the contact and the drain, and between the source and the second ohmic contact are both disconnected, thereby interrupting the transmission of electrons and holes between the source and the drain.
- the electrons of the source pass through the first structure and conduct
- the second structural portion of the semiconductor is better than the conductive portion, and the hole of the drain is transmitted to the source through the first structural portion and the second structural portion having better conductivity than the conductive semiconductor. Therefore, the mobility of the source and drain holes is increased, thereby increasing the on-state current of the TFT.
- the respective first structural portions are changed to the non-conductive state when a turn-off voltage is applied to the gate, electron and hole transport between the source and the drain is interrupted.
- the off-state current of the TFT remains unchanged; the ratio of the on-state current of the TFT to the off-state current is increased, the performance of the TFT is optimized, and the possibility that the TFT can effectively drive the large-area display device is improved to some extent. .
- the contact resistance between the source and drain electrodes and the active layer can be reduced, further improving the performance of the TFT.
- the TFT provided by the embodiment of the present invention further includes the first ohmic contact portion and the second ohmic contact portion
- the structural features of the first structural portion and the second structural portion included in the active layer are as long as the following conditions are met: Yes, any of the first structural portion and the second structural portion that can satisfy the following conditions are applicable to the embodiment of the present invention: when the turn-on voltage is applied to the gate, between the source and the drain, at the first ohm
- the conductive portion between the contact portion and the second ohmic contact portion, between the first ohmic contact portion and the drain, and between the source and the second ohmic contact portion each include a first structural portion and a second structural portion.
- the active layer includes the structural features of the first structural portion and the second structural portion, and the first ohm is not included.
- the TFTs of the contact portion and the second ohmic contact portion have similar implementations of the structural features of the first structural portion and the second structural portion of the active layer, and are not described herein again.
- the second structural portion may not be embedded in the first structural portion to solve the problem raised by the embodiment of the present invention.
- the second structure portion may be embedded in the first structure portion to solve the embodiment of the present invention.
- the proposed question is, for example, as shown in Figure 2e.
- each of the second structural portions is embedded in one of the first structural portions; and each of the first structural portions is embedded with at least one second structural portion.
- each of the second structural portions is embedded in the first structural portion
- the conductive path between the source and the drain includes the first structural portion and the second structural portion, thereby The ratio of the on-state current of the TFT to the off-state current can be increased;
- a TFT including a first ohmic contact portion and a second ohmic contact portion when an on voltage is applied to the gate, between the source and the drain, between the first ohmic contact portion and the second ohmic contact portion,
- the conductive paths between the first ohmic contact portion and the drain and between the source and the second ohmic contact portion each include a first structural portion and a second structural portion, so that the on-state current of the TFT can be increased The ratio of the state currents.
- the size of the first structural portion may be on the order of nanometers or micrometers; similar to the first structural portion, the size of the second structural portion may be on the order of nanometers or micrometers.
- the dimensions of the first structural portion and the second structural portion are all on the order of nanometers.
- the dimensions of the first structural portion and the second structural portion are all on the order of nanometers, and the active layer includes a plurality of first structural portions and a plurality of second structural portions;
- Each of the second structural portions is embedded in one first structural portion, and each of the first structural portions is embedded with a second structural portion.
- the spatial dimensions (eg, thickness, length, and width) of the active layer are on the order of micrometers, when the magnitudes of the sizes of the first structural portion and the second structural portion are on the order of nanometers, active
- the layer includes a plurality of first structural portions and a plurality of second structural portions.
- each of the second structural portions 22 is completely embedded in the first structural portion 21, and the first structural portion 21 is not a closed surface.
- first structural portion may also be a closed surface.
- first structural portions 21 is a closed surface that completely covers the second structural portion 22.
- the first structural portion and the second structural portion constitute core-shell particles in which the second structural portion is a core and the first structural portion is a shell.
- the gate When an on-voltage is applied to the gate, the case conducts, and the source and drain holes have a large mobility due to nuclear transfer, so that the on-state current of the TFT can be increased.
- a turn-off voltage is applied across the gate, the shell immediately changes from a conductive state to a non-conductive state. Therefore, source electron and drain hole transport are immediately interrupted. Therefore, the off-state current of the TFT can be kept unchanged; thereby increasing the on-state current of the TFT and closing The purpose of the ratio of the state currents.
- the shape of the first structural portion and the second structural portion may be a regular shape or an irregular shape.
- the second structural portion 22 is a nanosphere, and the second structural portion 22 and the first structural portion 21 completely covering the second structural portion 22 constitute a spherical shape or a spheroidal shape;
- the second structural portion 22 is a nanorod, and the second structural portion 22 and the first structural portion 21 that completely covers the second structural portion 22 constitute a rod shape.
- the dimensions of the first structural portion and the second structural portion are on the order of microns.
- the dimensions of the first structural portion and the second structural portion are on the order of micrometers; each second structural portion is embedded in one first structural portion, and each of the first structural portions is embedded with at least one second structure unit.
- the spatial dimensions (eg, thickness, length, and width) of the active layer are on the order of micrometers
- the size of the first structural portion and the second structural portion is on the order of micrometers
- active The layer includes at least one first structural portion and at least one second structural portion.
- the active layer 2 includes: a first structural portion 21 and a second structural portion 22, wherein The two structural portions 22 are embedded in the first structural portion 21.
- the shape of the first structural portion and the second structural portion may be a regular shape or an irregular shape.
- each of the first structural portion and the second structural portion embedded in the first structural portion is the same as the shape of a normal active layer.
- the size of the first structural portion is on the order of micrometers, and the size of the second structural portion is on the order of nanometers.
- the size of the first structural portion is on the order of micrometers, and the size of the second structural portion is on the order of nanometers; each second structural portion is embedded in one first structural portion, and each first structure At least one second structural portion is embedded in the portion.
- the active layer includes at least one first structural portion and at least one second structural portion.
- the active layer includes a first structural portion and a plurality of second structural portions. As shown in FIG. 2f, the active layer includes: a first structural portion 21 and four second structural portions 22, wherein each second Structural department 22 is embedded in the first structural portion 21.
- the shape of the first structural portion and the second structural portion may be a regular shape or an irregular shape.
- each of the first structural portion and the second structural portion embedded in the first structural portion is the same as the shape of the usual active layer.
- the conductor is set to have any conductivity that is superior to that of the conductor of the semiconductor after conduction.
- the set conductor includes one of a metal, a metal composite, and an organic conductor.
- the material of the first structural portion is any semiconductor; for example, an amorphous silicon semiconductor, a polycrystalline silicon semiconductor, a single crystal silicon semiconductor, a metal compound semiconductor, or an organic semiconductor.
- the material of the first structural portion is a metal compound semiconductor such as zinc oxide, zinc sulfide, or indium gallium zinc oxide.
- the structure in which the second structural portion is embedded in the first structural portion can be formed by any of a usual physical method, a chemical method, or a combination of a physical method and a chemical method.
- the size of the first structural portion and the second structural portion are on the order of nanometers, and the active layer includes a plurality of first structural portions and a plurality of second structural portions; each of the second structural portions is embedded in one A structural portion, and each of the first structural portions has a second structural portion embedded therein.
- Embodiments of a method for fabricating a core-shell particle having a nano-scale second structure portion as a core and a nano-scale first structure portion as a shell (ie, the nano-scale first structure portion completely coating the nano-scale second structure portion) Carry out a detailed introduction.
- the material of the second structural portion is a metal
- the usual template method, metal seed reduction method, sol-gel method, chemical reduction method, chemical reduction and sol-gel bonding method, microwave polyol method, One or more of a laser assisted synthesis method, a diafiltration method, a heat treatment method, and a photochemical method, and a core-shell particle in which the second structural portion is a core and the first structural portion is a shell is produced.
- a sol-gel method is used as an example to describe a core-shell particle in which the second structural portion is a core and the first structural portion is a shell.
- the second structural portion when the material of the second structural portion is metal, the second structural portion is made into a core, and the first structure
- the method for the core-shell particles of the shell comprises: synthesizing a second structural portion of the material by a chemical reduction method; using the second structural portion of the material as a seed, and passing the first structural portion on the surface of the seed
- the sol-gel reaction produces core-shell particles in which the second structural portion is a core and the first structural portion is a shell.
- the material of the second structural portion is any one of predetermined conductors
- a method of fabricating the core-shell particles in which the second structural portion is a core and the first structural portion is a shell is specifically described in the International Journal "Journal of the American Chemical Society”. (Journal of the American Chemical Society, Chem. Rev. 2012, 112, 2373-2333), which discloses a universal method of wrapping a first structural portion on the surface of a second structural portion.
- the size of the first structural portion and the second structural portion are on the order of micrometers, each second structural portion is embedded in one first structural portion, and each of the first structural portions is embedded with at least one second structure unit.
- a method of forming a structure in which a micro-scale second structural portion is embedded in a micro-scale first structural portion includes: forming a micro-scale second structural portion by a usual method; and wrapping the second structural portion in a molten state at a micron level When the outer surface of the second structural portion is wrapped with a second structural portion on the outer surface of the micron-sized second structural portion, the second structural portion in the molten state is cured.
- the size of the first structural portion is on the order of micrometers, and the size of the second structural portion is on the order of nanometers, each second structural portion is embedded in a first structural portion, and each first structure At least one second structural portion is embedded in the portion.
- a method similar to forming a structure in which the micro-scale second structural portion is embedded in the micro-scale first structural portion may be employed to form the nano-scale second structural portion embedded in the micro-scale The structure of a structural part.
- the method for fabricating a TFT in the embodiment of the present invention can be similar to the conventional method for fabricating a TFT; for example, the gate, and the source and the drain are formed by a conventional mature process; and the source and the drain are used by printing.
- the active layer is filled on the film layer; or, after the gate is formed by a conventional maturation process; an active layer is formed on the gate by coating and etching; and the source and the drain are formed according to a conventional mature process.
- forming a gate in a conventional mature process includes forming a gate by a screen printing method.
- forming a source and a drain in a conventional mature process includes forming a source and a drain by a screen printing method.
- the active layer is filled on the film layer where the source and the drain are located by printing, including: using IJP (Ink Jet Printer) printing, on the film layer where the source and the drain are located. Fill the active layer.
- IJP Ink Jet Printer
- the active layer includes a plurality of core portions 23 in which the second structure portion 22 is a core, and the first structure portion 21 is a shell.
- the shape of each core shell particle 23 is similar to a rod shape, for example,
- the second structural portion 22 i.e., the intermediate core
- the first structural portion 21 i.e., the outer coated shell
- the first structure portion 21 When the turn-on voltage is applied to the gate, the first structure portion 21 is changed from the off state to the on state, the source electrons can be transferred from the source to the drain, and since the second structure portion 22 is a metal having good conductivity When the source electrons are transmitted through the first structural portion 21, they are selectively transmitted through the second structural portion 22 having better conductivity.
- Embodiments of the drain holes are similar to the implementation of the source electrons. Therefore, compared with the conventional TFT, the on-state current of the TFT is increased due to the high mobility of a part of the conductive path (the channel through which the source and drain holes are transmitted).
- the first structural portion 21 When a turn-off voltage is applied to the gate, the first structural portion 21 is changed from the on state to the off state, and electron and hole transmission between the source and the drain is interrupted. Therefore, the off-state current of the TFT remains unchanged compared to the usual TFT. Thus, the ratio of the on-state current of the TFT to the off-state current is increased, thereby improving the performance of the TFT.
- An embodiment of the present invention further provides an array substrate including any of the TFTs described in the embodiments of the present invention.
- the array substrate including the TFT described in the embodiment of the present invention may also be applied to a large-area display device.
- the embodiment of the invention further provides a display device comprising the array substrate described in any embodiment of the invention.
- the array substrate described in the embodiment of the present invention may be applied to a large-area display device, so that the display device including the array substrate in the embodiment of the present invention has better working performance even if it is a large-area display device.
- the display device can be any display function of a liquid crystal panel, an electronic paper, an OLED (Organic Light Emitting Diode) panel, a mobile phone, a watch, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like. Product or part.
- OLED Organic Light Emitting Diode
- the TFT includes: a gate, an active layer on the gate, and a source respectively located on both sides of the active layer and partially overlapping the active layer; Drain
- the active layer includes: at least one first structural portion and at least one second structural portion, the material of the first structural portion is a semiconductor, the material of the second structural portion is a set conductor, and the conductive of the set conductor The performance is superior to the semiconductor after conduction; wherein, when an on voltage is applied to the gate, a conductive path between the source and the drain includes the first structure portion and the Second structural part.
- a conductive path between the source and the drain includes the first structure portion and the second structure portion, and electrons of the source pass through The first structural portion and the second structural portion are transferred to the drain, and holes of the drain are transmitted to the source through the first structural portion and the second structural portion.
- a turn-off voltage is applied to the gate, each of the first structural portions transitions to a non-conductive state such that a conductive path between the source and the drain is disconnected, thereby causing the source Electron and hole transport between the drain and the drain are interrupted.
- each of the first structural portions is transformed into a non-conductive state when a shutdown voltage is applied to the gate, electron and hole transport between the source and the drain are interrupted, and thus, the TFT The off-state current remains unchanged; the ratio of the on-state current of the TFT to the off-state current is increased, thereby making it possible for the TFT to efficiently drive a large-area display device.
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Abstract
一种薄膜晶体管、阵列基板以及显示装置，该薄膜晶体管，包括栅极（1），位于栅极（1）上的有源层（2），以及分别位于有源层（2）两侧，且与有源层（2）均部分交叠的源极（3）和漏极（4）；有源层（2）包括：至少一个第一结构部（21）和至少一个第二结构部（22），第一结构部（21）的材料为半导体，第二结构部（22）的材料为设定导体，设定导体的导电性能优于导通后的半导体的导电性能；当在栅极（1）上施加开启电压时，位于源极（3）和漏极（4）之间的导电通道包括第一结构部（21）和第二结构部（22）。TFT的开态电流与关态电流的比值增大了。
Description
本发明的实施例涉及一种薄膜晶体管、阵列基板以及显示装置。
显示装置的阵列基板包括衬底基板、以及位于衬底基板内侧的多条相互交叉以界定多个像素单元的栅线和数据线。每个像素单元中设置有TFT(Thin Film Transistor，薄膜晶体管)和与所述TFT电性连接的像素电极。
以底栅结构的TFT为例，每个像素单元的TFT包括位于衬底基板上的栅极、位于栅极上的有源层、以及分别位于所述有源层两侧且与所述有源层均部分交叠的源极和漏极。当在栅极上施加开启电压时，有源层导通，使得源极的电子通过导通后的有源层传输到所述漏极，以及使得漏极的空穴通过导通后的有源层传输到所述源极。而当在栅极上施加关闭电压时，有源层关断，使得源极和漏极之间的电子和空穴传输中断。
为了减小所述源极和漏极与所述有源层之间的接触电阻，以提高TFT的性能，TFT一般还包括：位于所述源极和漏极所在膜层与所述有源层之间，且位于所述源极与所述有源层的交叠区域的第一欧姆接触部以及位于所述漏极与所述有源层的交叠区域的第二欧姆接触部。
有源层的材料一般为导电率比较低的非晶硅半导体，因此在栅极上施加开启电压以导通有源层后，因所述有源层的导电性比较差，使得源极的电子和漏极的空穴的迁移率比较小，从而使得TFT的开态电流比较小。这使得TFT的开态电流与关态电流的比值比较小，导致TFT不能有效驱动大面积的显示装置，比如，大面积的OLED(有机发光二极管)。
通常，为了增大TFT的开态电流，有源层的材料一般为掺杂半导体、晶化半导体或者金属氧化物半导体等导电率比较高的半导体材料。然而，由于有源层材料的导电率提高了，在增大TFT的开态电流的同时，TFT的关态电流也增大了，使得TFT的开态电流与关态电流的比值仍然比较小。进一步地，使得TFT仍然不能有效驱动大面积的显示装置。
发明内容
本发明实施例提供的一种薄膜晶体管、阵列基板以及显示装置，用以解决TFT的开态电流与关态电流的比值比较小的问题。
本发明实施例提供的一种TFT，其包括栅极，位于所述栅极上的有源层，以及分别位于所述有源层两侧、且与所述有源层均部分交叠的源极和漏极。所述有源层包括：至少一个第一结构部和至少一个第二结构部，所述第一结构部的材料为半导体，所述第二结构部的材料为设定导体，所述设定导体的导电性能优于导通后的所述半导体的导电性能；当在所述栅极上施加开启电压时，位于所述源极和所述漏极之间的导电通道包括所述第一结构部和所述第二结构部。
例如，所述TFT还可包括：位于所述源极和漏极所在膜层与所述有源层之间，且位于所述源极与所述有源层的交叠区域的第一欧姆接触部、以及位于所述漏极与所述有源层的交叠区域的第二欧姆接触部；当在所述栅极上施加开启电压时，位于所述第一欧姆接触部与第二欧姆接触部之间、位于所述第一欧姆接触部与漏极之间、以及位于所述源极与第二欧姆接触部之间的导电通道均包括所述第一结构部和所述第二结构部。
例如，每个所述第二结构部内嵌于一个所述第一结构部；且每个所述第一结构部内嵌有至少一个所述第二结构部。
例如，所述有源层可包括多个第一结构部和多个第二结构部，且所述第一结构部和第二结构部的尺寸的量级为纳米级；每个所述第一结构部内嵌有一个所述第二结构部。
例如，每个所述第一结构部完全包覆所述第二结构部。
例如，所述第二结构部为纳米球，所述第二结构部和完全包覆所述第二结构部的所述第一结构部构成球形或者类球形；或者，所述第二结构部为纳米棒，所述第二结构部和完全包覆所述第二结构部的所述第一结构部构成棒形。
例如，所述第一结构部和第二结构部的尺寸的量级可均为微米级。
例如，所述第一结构部的尺寸的量级为微米级，且所述第二结构部的尺寸的量级为纳米级。
例如，所述设定导体包括金属、金属复合物和有机导体中的一种。
本发明实施例还提供一种阵列基板，其包括任一以上所述的TFT。
本发明实施例还提供的一种显示装置，其包括任一以上所述的阵列基板。
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1a和图1b为本发明实施例中TFT的结构示意图；
图2a～图2f为本发明实施例中有源层的结构示意图；
图3为本发明实施例中第二结构部完全内嵌于第一结构部的结构示意图；
图4为本发明实施例中第一结构部完全包覆第二结构部的结构示意图。
附图标记：
1-栅极；2-有源层；3-源极；4-漏极；5a-第一欧姆接触部；5b-第二欧姆接触部；21-第一结构部；22-第二结构部；23-核壳微粒。
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明的是，本发明实施例所提到的方向用语，如表示方向的“上”、“下”，仅是参考附图的方向以说明及理解本发明实施例，而不用于限制本发明实施例。而且，附图中各层膜层的厚度和形状不反映真实比例，目的只是示意说明本发明实施例的内容。
例如，如图1a所示，本发明实施例提供的一种TFT，包括栅极1，位于栅极1上的有源层2，以及分别位于有源层2两侧、且与有源层2均部分交叠的源极3和漏极4；
有源层2包括：至少一个第一结构部和至少一个第二结构部，第一结构
部的材料为半导体，第二结构部的材料为设定导体，设定导体的导电性能优于导通后的半导体的导电性能；
当在栅极1上施加开启电压时，位于源极3和漏极4之间的导电通道包括第一结构部和第二结构部。
例如，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部，源极的电子通过第一结构部和第二结构部传输到漏极，漏极的空穴通过第一结构部和第二结构部传输到源极。当在栅极上施加关闭电压时，各第一结构部转变为不导电状态，使得位于源极和漏极之间的导电通道断开，从而使得源极和漏极之间的电子和空穴传输中断。
由于当在栅极上施加开启电压时，源极的电子会通过第一结构部和导电性能优于导通后的半导体的第二结构部传输到漏极，以及漏极的空穴会通过第一结构部和导电性能优于导通后的半导体的第二结构部传输到源极，因此，提高了源极电子和漏极空穴的迁移率，从而增大了TFT的开态电流。而且，由于当在栅极上施加关闭电压时，各第一结构部转变为不导电状态，使得源极和漏极之间的电子和空穴传输中断。因此，TFT的关态电流保持不变；使得TFT的开态电流与关态电流的比值增大了，优化了TFT的性能，在一定程度上提高了TFT实现有效驱动大面积显示装置的可能性。
需要说明的是，有源层包括的第一结构部和第二结构部的结构特征只要满足如下条件即可，任一种可以满足如下条件的第一结构部和第二结构部均适用于本发明实施例：当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部。
需要说明的是，由于可以满足条件的第一结构部和第二结构部的结构特征的实施方式无法穷举，下面将仅对其中的几种进行介绍。
一、第一结构部和第二结构部的结构特征为：源极和漏极仅与至少部分第一结构部接触。
比如，如图2a所示，有源层包括：两个第一结构部21和一个第二结构部22；第二结构部22与源极3和漏极4均不接触，且两端各与一个第一结构部21接触；一个第一结构部21的一端与第二结构部22接触，另一端与源极3接触，另一个第一结构部21的一端与第二结构部22接触，另一端与漏极4接触。
在实施中，在图2a中，第二结构部与源极和漏极均不接触，而部分第一结构部与源极接触，其余的部分第一结构部与漏极接触。由于源极电子和漏极空穴在传输时会选择导电性能更好的材料进行传输，因此，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道必然包括第一结构部和第二结构部。
二、第一结构部和第二结构部的结构特征为：源极仅与至少部分第二结构部接触，而漏极仅与至少部分第一结构部接触。
比如，如图2b所示，有源层包括：两个第一结构部21和一个第二结构部22；第二结构部22的一端与源极3接触，且另一端与其中一个第一结构部21接触；该其中一个第一结构部21的另一端与另一个第一结构部21接触；该另一个第一结构部21的另一端与漏极4接触。
在实施中，在图2b中，第二结构部与源极接触，而部分第一结构部与漏极接触，其余的部分第一结构部与源极和漏极均不接触；因此，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道必然包括第一结构部和第二结构部。
三、第一结构部和第二结构部的结构特征为：源极仅与至少部分第一结构部接触，而漏极仅与至少部分第二结构部接触。
比如，如图2c所示，有源层包括：两个第一结构部21和一个第二结构部22；第二结构部22的一端与漏极4接触，且另一端与其中一个第一结构部21接触；该其中一个第一结构部21的另一端与另一个第一结构部21接触；该另一个第一结构部21的另一端与源极3接触。
在实施中，在图2c中，第二结构部与漏极接触，而部分第一结构部与源极接触，其余的部分第一结构部与源极和漏极均不接触。因此，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道必然包括第一结构部和第二结构部。
四、第一结构部和第二结构部的结构特征为：源极和漏极仅与至少部分第二结构部接触，且当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部。
比如，如图2d所示，有源层包括：一个第一结构部21和两个第二结构部22；一个第二结构部22的一端与源极3接触，另一个第二结构部22的一
端与漏极4接触，第一结构部21的两端分别与该两个第二结构部22接触。
在实施中，在图2d中，部分第二结构部与源极接触，另一部分第二结构部与漏极接触，第一结构部与第二结构部接触。因此，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部。
五、第一结构部和第二结构部的结构特征为：各第二结构部内嵌于第一结构部。
比如，如图2e所示，有源层包括：一个第一结构部21和一个第二结构部22，其中，第二结构部22内嵌于第一结构部21；第一结构部21与源极3和漏极4均接触；第二结构部22与源极3和漏极4均不接触。
在实施中，在图2e中，各第二结构部内嵌于第一结构部，由于源极电子和漏极空穴在传输时会选择导电性能更好的材料进行传输；因此，当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部。
例如，如图1b所示，本发明实施例提供的TFT还包括：位于源极3和漏极4所在膜层与有源层2之间，且位于源极3与有源层2的交叠区域的第一欧姆接触部5a、以及位于漏极4与有源层2的交叠区域的第二欧姆接触部5b。
当在栅极1上施加开启电压时，位于第一欧姆接触部5a与第二欧姆接触部5b之间、位于第一欧姆接触部5a与漏极4之间、以及位于源极3与第二欧姆接触部5b之间的导电通道均包括第一结构部和第二结构部。
在实施中，当在栅极上施加开启电压时，位于源极和漏极之间、位于第一欧姆接触部与第二欧姆接触部之间、位于第一欧姆接触部与漏极之间、以及位于源极与第二欧姆接触部之间的导电通道均包括第一结构部和第二结构部，从而使得源极的电子均会通过第一结构部和第二结构部传输到漏极，漏极的空穴也均会通过第一结构部和第二结构部传输到源极。当在栅极上施加关闭电压时，各第一结构部转变为不导电状态，使得位于源极和漏极之间、位于第一欧姆接触部与第二欧姆接触部之间、位于第一欧姆接触部与漏极之间、以及位于源极与第二欧姆接触部之间的导电通道均断开，从而使得源极和漏极之间的电子和空穴传输中断。
由于当在栅极上施加开启电压时，源极的电子会通过第一结构部和导电
性能优于导通后的半导体的第二结构部传输到漏极，以及漏极的空穴会通过第一结构部和导电性能优于导通后的半导体的第二结构部传输到源极，因此，提高了源极电子和漏极空穴的迁移率，从而增大了TFT的开态电流。而且，由于当在栅极上施加关闭电压时，各第一结构部转变为不导电状态，使得源极和漏极之间的电子和空穴传输中断。因此，TFT的关态电流保持不变；使得TFT的开态电流与关态电流的比值增大了，优化了TFT的性能，在一定程度上提高了TFT实现有效驱动大面积显示装置的可能性。
例如，通过设置第一欧姆接触部和第二欧姆接触部，可以减小源极和漏极与有源层之间的接触电阻，进一步提高TFT的性能。
需要说明的是，当本发明实施例提供的TFT还包括第一欧姆接触部与第二欧姆接触部时，有源层包括的第一结构部和第二结构部的结构特征只要满足如下条件即可，任一种可以满足如下条件的第一结构部和第二结构部均适用于本发明实施例：当在栅极上施加开启电压时，位于源极和漏极之间、位于第一欧姆接触部与第二欧姆接触部之间、位于第一欧姆接触部与漏极之间、以及位于源极与第二欧姆接触部之间的导电通道均包括第一结构部和第二结构部。
需要说明的是，对于包含第一欧姆接触部与第二欧姆接触部的TFT，其有源层包含的第一结构部和第二结构部的结构特征的实施方式，与对于不包含第一欧姆接触部与第二欧姆接触部的TFT，其有源层包含的第一结构部和第二结构部的结构特征的实施方式类似，在此不再赘述。
例如，从对本发明实施例的方案的描述可以看出，可以不将第二结构部内嵌于第一结构部，以解决本发明实施例提出的问题。比如，如图2a～图2d所示，为了尽可能增大TFT的开态电流与关态电流的比值，也可以将各第二结构部内嵌于第一结构部，以解决本发明实施例提出的问题，比如，如图2e所示。
下面将对本发明实施例中将各第二结构部内嵌于第一结构部，以解决本发明实施例提出的问题的方案进行详细介绍。
例如，每个第二结构部内嵌于一个第一结构部；且每个第一结构部内嵌有至少一个第二结构部。
例如，将各第二结构部内嵌于第一结构部，
对于不包含第一欧姆接触部与第二欧姆接触部的TFT：当在栅极上施加开启电压时，位于源极和漏极之间的导电通道包括第一结构部和第二结构部，从而可以增大TFT的开态电流与关态电流的比值；
对于包含第一欧姆接触部与第二欧姆接触部的TFT：当在栅极上施加开启电压时，位于源极和漏极之间、位于第一欧姆接触部与第二欧姆接触部之间、位于第一欧姆接触部与漏极之间、以及位于源极与第二欧姆接触部之间的导电通道均包括第一结构部和第二结构部，从而可以增大TFT的开态电流与关态电流的比值。
例如，第一结构部的尺寸的量级可以为纳米级，也可以为微米级；与第一结构部类似，第二结构部的尺寸的量级可以为纳米级，也可以为微米级。
下面以第一结构部和第二结构部的尺寸的量级为分类依据，对本发明实施例中各第二结构部内嵌于第一结构部的实施方式进行详细介绍。
一、第一结构部和第二结构部的尺寸的量级均为纳米级。
例如，第一结构部和第二结构部的尺寸的量级均为纳米级，且有源层包括多个第一结构部和多个第二结构部；
每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有一个第二结构部。
实施中，由于有源层的空间尺寸(比如，厚度、长度和宽度)的量级为微米级，因此，在第一结构部和第二结构部的尺寸的量级为纳米级时，有源层包括多个第一结构部和多个第二结构部。
例如，如图3所示，每个第二结构部22完全内嵌于第一结构部21，且第一结构部21不是一个封闭面。
例如，第一结构部也可以是一个封闭面，比如，如图4所示，每个第一结构部21为一个完全包覆第二结构部22的封闭面。
实施中，在每个第一结构部完全包覆第二结构部时，第一结构部和第二结构部构成第二结构部为核、且第一结构部为壳的核壳微粒。当在栅极上施加开启电压时，壳导电，源极电子和漏极空穴因通过核传输而具有较大的迁移率，从而可以增大TFT的开态电流。当在栅极上施加关闭电压时，壳立即由导电状态变为不导电状态。因此，源极电子和漏极空穴传输立即中断。从而可以使得TFT的关态电流保持不变；进而达到增大TFT的开态电流与关
态电流的比值的目的。
例如，第一结构部和第二结构部的形状可以为规则形状，也可以为不规则形状。
例如，如图3所示，第二结构部22为纳米球，第二结构部22和完全包覆第二结构部22的第一结构部21构成球形或者类球形；或者，
如图4所示，第二结构部22为纳米棒，第二结构部22和完全包覆第二结构部22的第一结构部21构成棒形。
二、第一结构部和第二结构部的尺寸的量级为微米级。
例如，第一结构部和第二结构部的尺寸的量级为微米级；每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有至少一个第二结构部。
实施中，由于有源层的空间尺寸(比如，厚度、长度和宽度)的量级为微米级，因此，在第一结构部和第二结构部的尺寸的量级为微米级时，有源层包括至少一个第一结构部和至少一个第二结构部。
比如，以有源层包括一个第一结构部和一个第二结构部为例，如图2e所示，有源层2包括：一个第一结构部21和一个第二结构部22，其中，第二结构部22内嵌于第一结构部21。
例如，第一结构部和第二结构部的形状可以为规则形状，也可以为不规则形状。
例如，各第一结构部和内嵌于第一结构部的第二结构部构成的形状与通常的有源层的形状相同。
三、第一结构部的尺寸的量级为微米级，且第二结构部的尺寸的量级为纳米级。
例如，第一结构部的尺寸的量级为微米级，且第二结构部的尺寸的量级为纳米级；每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有至少一个第二结构部。
例如，由于有源层的空间尺寸(比如，厚度、长度和宽度)的量级为微米级，因此，在第一结构部的尺寸的量级为微米级，且第二结构部的尺寸的量级为纳米级时，有源层包括至少一个第一结构部和至少一个第二结构部。
例如，有源层包括一个第一结构部和多个第二结构部，如图2f所示，有源层包括：一个第一结构部21和4个第二结构部22，其中，各第二结构部
22内嵌于第一结构部21。
例如，第一结构部和第二结构部的形状可以为规则形状，也可以为不规则形状。
例如，各第一结构部和内嵌于第一结构部的第二结构部构成的形状与通常有源层的形状相同。
例如，设定导体为任一种导电性能优于导通后的半导体的导体的导电性能。
例如，设定导体包括金属、金属复合物和有机导体中的一种。
例如，第一结构部的材料为任一种半导体；比如，非晶硅半导体、多晶硅半导体、单晶硅半导体、金属化合物半导体、或者有机半导体。
例如，第一结构部的材料为金属化合物半导体，比如，氧化锌、硫化锌、或者氧化铟镓锌。
例如，可以通过通常的任一种物理方法，化学方法，或者物理方法与化学方法的组合，形成第二结构部内嵌于第一结构部的结构。
下面将以第一结构部和第二结构部的尺寸的量级为分类依据，对本发明实施例中第二结构部内嵌于第一结构部的制作方法的实施方式进行详细介绍。
一、第一结构部和第二结构部的尺寸的量级为纳米级，且有源层包括多个第一结构部和多个第二结构部；每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有一个第二结构部。
下面对制作纳米级第二结构部为核、且纳米级第一结构部为壳的核壳微粒(即，纳米级第一结构部完全包覆纳米级第二结构部)的方法的实施方式进行详细介绍。
例如，在第二结构部的材料为金属时，可以通过通常的模板法、金属种子还原法、溶胶-凝胶法、化学还原法、化学还原和溶胶-凝胶结合法、微波多元醇法、激光辅助合成法、渗滤法、热处理法和光化学法等中的一种或多种方法，制作第二结构部为核、且第一结构部为壳的核壳微粒。
比如，以采用溶胶-凝胶法为例制作第二结构部为核、且第一结构部为壳的核壳微粒为例进行描述。
例如，第二结构部的材料为金属时，制作第二结构部为核、且第一结构
部为壳的核壳微粒的方法，包括：采用化学还原法合成出材料为金属的第二结构部；将该材料为金属的第二结构部作为种子，并通过第一结构部在种子表面的溶胶-凝胶反应制备出第二结构部为核、且第一结构部为壳的核壳微粒。
例如，在第二结构部的材料为任一种预设导体时，制作第二结构部为核、且第一结构部为壳的核壳微粒的方法具体参见国际杂志“Journal of the American Chemical Society(美国化学学会期刊，Chem.Rev.2012,112,2373–2433)”，其公开了一种将第一结构部包裹在第二结构部表面的普适方法。
二、第一结构部和第二结构部的尺寸的量级为微米级，每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有至少一个第二结构部。
例如，形成微米级第二结构部内嵌于微米级第一结构部的结构的方法，包括：采用通常的方法，形成微米级第二结构部；采用熔融态的第二结构部包裹在微米级第二结构部的外表面，并在微米级第二结构部的外表面均包裹有一层第二结构部时，对熔融态的第二结构部进行固化处理。
三、第一结构部的尺寸的量级为微米级，且第二结构部的尺寸的量级为纳米级，每个第二结构部内嵌于一个第一结构部，且每个第一结构部内嵌有至少一个第二结构部。
例如，在获取纳米级第二结构部后，可以采用类似于形成微米级第二结构部内嵌于微米级第一结构部的结构的方法，形成纳米级第二结构部内嵌于微米级第一结构部的结构。
例如，本发明实施例中制作TFT的方法可以与通常的制作TFT的方法类似；比如，栅极、以及源极和漏极按传统成熟工艺形成后；利用打印的方式在源极和漏极所在膜层上填充有源层；或者，栅极按传统成熟工艺形成后；采用涂覆和刻蚀的方式，在栅极上形成有源层；并按传统成熟工艺形成源极和漏极。
例如，按传统成熟工艺形成栅极，包括：通过丝网印刷方法，形成栅极。
例如，按传统成熟工艺形成源极和漏极，包括：通过丝网印刷方法，形成源极和漏极。
例如，利用打印的方式在源极和漏极所在膜层上填充有源层，包括：利用IJP(Ink Jet Printer，喷墨打印机)打印的方式，在源极和漏极所在膜层上
填充有源层。
实施例
如图4所示，有源层包括：多个第二结构部22为核、且第一结构部21为壳的核壳微粒23，各核壳微粒23的形状类似于棒形，例如，第二结构部22(即，中间核)可采用金属Zn(锌)，第一结构部21(即，上面包覆的壳)可采用半导体氧化锌、硫化锌、或者氧化铟镓锌。
当在栅极上施加开启电压时，第一结构部21由关断状态变为导通状态，源极电子能够由源极传递到漏极，而由于第二结构部22是导电性好的金属，源极电子在经第一结构部21传递时会选择经导电性更好的第二结构部22传递。漏极空穴的实施方式与源极电子的实施方式类似。因此，相比通常的TFT，由于部分导电通道(传输源极电子和漏极空穴的通道)的迁移率变高，使得TFT的开态电流增大。当在栅极上施加关闭电压时，第一结构部21由导通状态变为关断状态，源极和漏极之间的电子和空穴传输中断。因此，相比通常的TFT，TFT的关态电流保持不变。因而，使得TFT的开态电流与关态电流的比值增大，从而改善TFT的性能。
本发明实施例还提供一种阵列基板，其包括任一本发明实施例中所述的TFT。
由于本发明实施例中的TFT的开态电流与关态电流的比值增大了，使得包含本发明实施例中所述TFT的阵列基板也可能应用于大面积显示装置。
本发明实施例还提供一种显示装置，其包括任一本发明实施例中所述的阵列基板。
由于本发明实施例中所述的阵列基板可能应用于大面积显示装置，使得包含本发明实施例中所述阵列基板的显示装置即使为大面积显示装置，也具有较好的工作性能。
例如，显示装置可以为液晶面板、电子纸、OLED(Organic Light Emitting Diode，有机发光二极管)面板、手机、手表、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明实施例可至少实现如下的有益效果之一：
在本发明实施例中，TFT包括：栅极，位于所述栅极上的有源层，以及分别位于所述有源层两侧、且与所述有源层均部分交叠的源极和漏极；所述
有源层包括：至少一个第一结构部和至少一个第二结构部，所述第一结构部的材料为半导体，所述第二结构部的材料为设定导体，所述设定导体的导电性能优于导通后的所述半导体；其中，当在所述栅极上施加开启电压时，位于所述源极和所述漏极之间的导电通道包括所述第一结构部和所述第二结构部。
当在所述栅极上施加开启电压时，位于所述源极和所述漏极之间的导电通道包括所述第一结构部和所述第二结构部，所述源极的电子通过所述第一结构部和所述第二结构部传输到所述漏极，所述漏极的空穴通过所述第一结构部和所述第二结构部传输到所述源极。当在所述栅极上施加关闭电压时，各所述第一结构部转变为不导电状态，使得位于所述源极和所述漏极之间的导电通道断开，从而使得所述源极和漏极之间的电子和空穴传输中断。
由于当在所述栅极上施加开启电压时，所述源极的电子会通过所述第一结构部和导电性能优于导通后的半导体的所述第二结构部传输到所述漏极，以及所述漏极的空穴会通过所述第一结构部和导电性能优于导通后的半导体的所述第二结构部传输到所述源极，因此，提高了源极电子和漏极空穴的迁移率，从而增大了TFT的开态电流。而且，由于当在所述栅极上施加关闭电压时，各所述第一结构部转变为不导电状态，使得所述源极和漏极之间的电子和空穴传输中断，因此，TFT的关态电流保持不变；使得TFT的开态电流与关态电流的比值增大了，从而使得TFT可能有效的驱动大面积的显示装置。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本专利申请要求于2014年9月10日递交的中国专利申请第201410456916.8号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
Claims (11)
- 一种薄膜晶体管，其包括栅极，位于所述栅极上的有源层，以及分别位于所述有源层两侧、且与所述有源层均部分交叠的源极和漏极，其中，所述有源层包括至少一个第一结构部和至少一个第二结构部，所述第一结构部的材料为半导体，所述第二结构部的材料为设定导体，所述设定导体的导电性能优于导通后的所述半导体的导电性能；当在所述栅极上施加开启电压时，位于所述源极和所述漏极之间的导电通道包括所述第一结构部和所述第二结构部。
- 如权利要求1所述的薄膜晶体管，还包括：位于所述源极和漏极所在膜层与所述有源层之间，且位于所述源极与所述有源层的交叠区域的第一欧姆接触部、以及位于所述漏极与所述有源层的交叠区域的第二欧姆接触部；其中，当在所述栅极上施加开启电压时，位于所述第一欧姆接触部与第二欧姆接触部之间、位于所述第一欧姆接触部与漏极之间、以及位于所述源极与第二欧姆接触部之间的导电通道均包括所述第一结构部和所述第二结构部。
- 如权利要求1或2所述的薄膜晶体管，其中，每个所述第二结构部内嵌于一个所述第一结构部；且每个所述第一结构部内嵌有至少一个所述第二结构部。
- 如权利要求1-3任一项所述的薄膜晶体管，其中，所述有源层包括多个第一结构部和多个第二结构部，且所述第一结构部和第二结构部的尺寸的量级均为纳米级；每个所述第一结构部内嵌有一个所述第二结构部。
- 如权利要求3或4所述的薄膜晶体管，其中，每个所述第一结构部完全包覆所述第二结构部。
- 如权利要求3-5任一项所述的薄膜晶体管，其中，所述第二结构部为纳米球，所述第二结构部和完全包覆所述第二结构部的所述第一结构部构成球形或者类球形；或者，所述第二结构部为纳米棒，所述第二结构部和完全包覆所述第二结构部的所述第一结构部构成棒形。
- 如权利要求1-3任一项所述的薄膜晶体管，其中，所述第一结构部和第二结构部的尺寸的量级为微米级。
- 如权利要求1-3任一项所述的薄膜晶体管，其中，所述第一结构部的尺寸的量级为微米级，且所述第二结构部的尺寸的量级为纳米级。
- 如权利要求1-8任一项所述的薄膜晶体管，其中，所述设定导体包括金属、金属复合物和有机导体中的一种。
- 一种阵列基板，其包括如权利要求1-9任一项所述的薄膜晶体管。
- 一种显示装置，其包括如权利要求10所述的阵列基板。
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| US14/770,652 US9793361B2 (en) | 2014-09-10 | 2014-12-17 | Thin film transistor, array substrate and display device |
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| CN201410456916.8A CN104241395B (zh) | 2014-09-10 | 2014-09-10 | 一种薄膜晶体管、阵列基板、以及显示装置 |
| CN201410456916.8 | 2014-09-10 |
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| CN105493256B (zh) | 2015-09-15 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1452250A (zh) * | 2002-04-15 | 2003-10-29 | Lg.飞利浦Lcd有限公司 | 多晶硅薄膜晶体管及其制造方法 |
| CN1619392A (zh) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法 |
| US20100163863A1 (en) * | 2008-06-24 | 2010-07-01 | Fujifilm Corporation | Thin film field effect transistor and display |
| CN202405260U (zh) * | 2011-08-23 | 2012-08-29 | 广东中显科技有限公司 | 一种有源矩阵显示器 |
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| CN100337316C (zh) * | 2004-03-20 | 2007-09-12 | 鸿富锦精密工业（深圳）有限公司 | 薄膜晶体管及其制造方法 |
| KR20080023475A (ko) * | 2006-09-11 | 2008-03-14 | 엘지전자 주식회사 | 포토리소그래피를 이용한 유기 박막 트랜지스터 제조 방법 |
| CN103354218B (zh) * | 2013-06-28 | 2016-12-28 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1452250A (zh) * | 2002-04-15 | 2003-10-29 | Lg.飞利浦Lcd有限公司 | 多晶硅薄膜晶体管及其制造方法 |
| CN1619392A (zh) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法 |
| US20100163863A1 (en) * | 2008-06-24 | 2010-07-01 | Fujifilm Corporation | Thin film field effect transistor and display |
| CN202405260U (zh) * | 2011-08-23 | 2012-08-29 | 广东中显科技有限公司 | 一种有源矩阵显示器 |
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| CN104241395B (zh) | 2017-02-15 |
| CN104241395A (zh) | 2014-12-24 |
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