WO2016033884A1 - 有机发光二极管显示装置及其制作方法 - Google Patents

有机发光二极管显示装置及其制作方法 Download PDF

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Publication number
WO2016033884A1
WO2016033884A1 PCT/CN2014/092767 CN2014092767W WO2016033884A1 WO 2016033884 A1 WO2016033884 A1 WO 2016033884A1 CN 2014092767 W CN2014092767 W CN 2014092767W WO 2016033884 A1 WO2016033884 A1 WO 2016033884A1
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Prior art keywords
layer
transport layer
array substrate
light
light emitting
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PCT/CN2014/092767
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English (en)
French (fr)
Chinese (zh)
Inventor
张金中
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to KR1020157022657A priority Critical patent/KR101728622B1/ko
Priority to JP2017531930A priority patent/JP6567670B2/ja
Priority to US14/769,080 priority patent/US9997577B2/en
Priority to EP14882173.9A priority patent/EP3190638B1/en
Publication of WO2016033884A1 publication Critical patent/WO2016033884A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an organic light-emitting diode (OLED) display device and a method of fabricating the same.
  • OLED organic light-emitting diode
  • OLED display devices have become the mainstream development trend of next-generation display devices due to their advantages such as thin size, high contrast, high color gamut, low power consumption, and flexible display.
  • the Active Matrix Organic Light Emission Display (AMOLED) in the OLED display device has a fast response speed and can meet the requirements of display devices of various sizes, and thus has attracted much attention of many enterprises.
  • the AMOLED display device generally includes an array substrate and a light-emitting device, wherein the light-emitting device is mainly implemented by a fine metal mask, and the implementation manner has become increasingly mature, and the AMOLED is mass-produced.
  • the OLED material is vapor-deposited onto the low-temperature polysilicon back plate according to a predetermined program by vapor deposition, and then the patterning process is performed on the pattern on the fine metal mask to form the light-emitting device.
  • the structure of the AMOLED display device generally includes an array substrate 101, an anode 102, a hole injection layer 103, a hole transport layer 104, an emission layer 105, an electron transport layer 106, an electron injection layer 107, and a cathode 108.
  • the light emitted by the light-emitting layer will be emitted upward and downward respectively when the light-emitting device emits light, and the light emitted upward needs to be transmitted through the electron transport layer, the electron injection layer and the cathode, and the light emitted downward. It needs to pass through the hole transport layer and the hole injection layer, and is transmitted to the anode, and then reflected by the anode to emit upward. After the reflection, the light passes through the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer. And the cathode can be transmitted.
  • the invention provides an OLED display device and a manufacturing method thereof for improving the external quantum efficiency of the light emitting device, thereby improving the light extraction efficiency of the OLED display device.
  • An OLED display device includes: an array substrate, the array substrate includes a plurality of pixel opening regions, and a light emitting device located on the array substrate and located in each of the pixel opening regions, the light emitting device comprising: a hole transport layer, a light emitting layer, and an electron transport layer; wherein a vertical projection of the light emitting layer on the array substrate defines the pixel opening region; the hole transport layer and the electron transport layer are respectively located in the Two sides of the light emitting layer, or the hole transport layer and the electron transport layer are located on the same side of the light emitting layer; a vertical projection of the hole transport layer on the array substrate and the electron transport layer are Vertical projections on the array substrate partially cover the pixel opening region, and a vertical projection of the hole transport layer on the array substrate and a vertical projection of the electron transport layer on the array substrate are mutually Do not overlap.
  • the light emitting device further includes: a hole injection layer located on a side of the hole transport layer facing away from the light emitting layer, and an electron injection layer located on a side of the electron transport layer facing away from the light emitting layer;
  • the hole injection layer completely overlaps the hole transport layer, and the electron injection layer completely overlaps the electron transport layer.
  • the light emitting device further includes: an anode located on a side of the hole injection layer facing away from the light emitting layer, and a cathode located on a side of the electron injection layer facing away from the light emitting layer.
  • the anode completely overlaps with the hole transport layer
  • the cathode completely overlaps the electron transport layer
  • the hole transport layer is located on a side of the light emitting layer facing the array substrate
  • the electron transport layer is located on a side of the light emitting layer facing away from the array substrate
  • the anode and the The light-emitting layer or the hole injection layer completely overlaps
  • the cathode completely overlaps the electron injection layer.
  • the hole transport layer is located on a side of the light emitting layer facing away from the array substrate, and the electron transport layer is located on a side of the light emitting layer facing the array substrate, the anode and the The hole injection layers completely overlap, and the cathode completely overlaps the electron injection layer or the light-emitting layer.
  • the light emitting device further includes: an electron blocking layer between the hole transport layer and the light emitting layer, and a hole blocking between the electron transport layer and the light emitting layer Floor.
  • the light emitting device further comprises: a protective layer covering the light emitting device.
  • the present invention also provides a method of fabricating an OLED display device, comprising: forming an array substrate, the array substrate comprising a plurality of pixel opening regions; forming a light emitting device in each pixel opening region on the array substrate, Forming a light emitting device includes forming a hole transport layer, a light emitting layer, and an electron transport layer; wherein a vertical projection of the light emitting layer on the array substrate defines the pixel opening region; the hole transport layer and the electron transport Layers are respectively located on both sides of the light-emitting layer, or the hole transport layer and the electron transport layer are located on the same side of the light-emitting layer; vertical projection and placement of the hole transport layer on the array substrate The vertical projection of the electron transport layer on the array substrate partially covers the pixel opening region, and the vertical projection of the hole transport layer on the array substrate and the electron transport layer on the array substrate The vertical projections on the top do not overlap each other.
  • the hole transport layer, the light emitting layer and the electron transport layer are formed by vapor deposition on the array substrate using a fine metal mask.
  • the vertical projection of the light-emitting layer of the light-emitting device on the array substrate defines a pixel opening region, the vertical projection of the hole transport layer on the array substrate, and the electron transport layer in the array
  • the vertical projections on the substrate partially cover the pixel opening area, and the two vertical projections do not overlap each other.
  • the number of layers in each region of the light-emitting device is reduced, so that the number of layers that pass through the light generated by the composite of the light-emitting layer in the emission direction to the outside of the device is reduced, thereby reducing the film layer to the light.
  • the absorption and scattering effects reduce the loss of light, improve the external quantum efficiency of the light-emitting device, and further improve the light-emitting efficiency of the OLED display device.
  • FIG. 1 is a structural view of an OLED display device in the prior art
  • FIG. 2 is a structure of a light emitting device of an OLED display device according to Embodiment 2 of the present invention.
  • FIG. 3 is another structural diagram of a light emitting device of an OLED display device according to Embodiment 2 of the present invention.
  • FIG. 4 is a structural diagram of a light emitting device of an OLED display device according to Embodiment 3 of the present invention.
  • FIG. 5 is another structural diagram of a light emitting device of an OLED display device according to Embodiment 3 of the present invention.
  • the embodiment provides an OLED display device, including: an array substrate, the array substrate includes a plurality of pixel opening regions; and a light emitting device located on the array substrate and located in each pixel opening region.
  • the light emitting device comprises: a hole transport layer, a light emitting layer and an electron transport layer; wherein a vertical projection of the light emitting layer on the array substrate defines a pixel opening region; the hole transport layer and the electron transport layer are respectively located on both sides of the light emitting layer Or the hole transport layer and the electron transport layer are located on the same side of the light-emitting layer; the vertical projection of the hole transport layer on the array substrate and the vertical projection of the electron transport layer on the array substrate partially cover the pixel opening region, and the cavity
  • the vertical projection of the transport layer on the array substrate and the vertical projection of the electron transport layer on the array substrate do not overlap each other.
  • pixel open area refers to a planar area defined by a vertical projection of the luminescent layer on the array substrate parallel to the array substrate.
  • the "pixel opening area” may also be simplified as a partial area of the array substrate covered by the vertical projection of the light emitting layer on the array substrate.
  • the embodiment further provides a method for fabricating an OLED display device, which is used to fabricate the OLED display device provided by the embodiment, comprising: forming an array substrate, the array substrate comprising a plurality of pixel opening regions ; in each pixel opening area on the array substrate The light emitting device described above is formed.
  • the vertical projection of the light-emitting layer of the light-emitting device on the array substrate defines a pixel opening region, the vertical projection of the hole transport layer on the array substrate, and the electron transport layer in the array
  • the vertical projection on the substrate partially covers the pixel opening area, and the two vertical projections do not overlap each other, and the number of layers of each region of the light emitting device in the emission direction is reduced.
  • the holes that enter the light-emitting layer through the hole transport layer and the electrons that enter the light-emitting layer through the electron transport layer recombine in the light-emitting layer, and the number of layers that pass through the light emitted in the emission direction to the outside of the device is reduced. It also reduces the absorption and scattering of light by the film layer, reduces the loss of light during transmission, improves the external quantum efficiency of the light-emitting device, and further improves the light-emitting efficiency of the OLED display device.
  • the OLED display device of the embodiment further includes: a hole injection layer on a side of the hole transport layer facing away from the light-emitting layer, and a light-emitting layer located away from the light-emitting layer
  • the electron injection layer on one side, the hole injection layer and the hole transport layer completely overlap, the electron injection layer completely overlaps with the electron transport layer; the anode located on the side of the hole injection layer facing away from the light emitting layer, and the electron injection layer located away from the light emitting layer
  • the light-emitting device can be classified into a light-emitting layer for recombining holes and electrons, a hole unit for transporting holes to the light-emitting layer, and an electron unit for transporting electrons to the light-emitting layer.
  • the hole transport layer, the hole injection layer, and the anode belong to a hole unit; the electron transport layer, the electron injection layer, and the cathode belong to an electron unit.
  • the individual film layers belonging to the hole unit are always on the same side of the light-emitting layer, and the film layers belonging to the electronic unit are always on the same side of the light-emitting layer.
  • the positions of the hole unit and the electron unit with respect to the light-emitting layer are not limited.
  • the hole unit and the electronic unit may be located on the same side of the light-emitting layer or on both sides of the light-emitting layer.
  • the hole transport layer 204 of the light emitting device may be located on a side of the light emitting layer 206 facing the array substrate 201, and the electron transport layer 208 is located on a side of the light emitting layer 206 facing away from the array substrate 201; Fully overlapping with the luminescent layer 206, the cathode 2010 completely overlaps the electron injecting layer 209.
  • the hole transport layer 204, the hole injection layer 203, and the anode 202 belonging to the hole unit are located on the lower side of the light-emitting layer 206; the electron transport layer 208, the electron injection layer 209, and the cathode 2010 belonging to the electron unit are located in the light-emitting layer The upper side of 206; and the vertical projection of the anode 202 on the array substrate 201 covers the pixel opening area, and the cathode 2010 is on the array substrate The vertical projection on 201 partially covers the pixel opening area.
  • the anode 202 completely covers each pixel opening region of the array substrate 201; the hole injection layer 203 is located at one end of the pixel opening region, partially covering the anode 202, that is, the hole injection layer 203 is on the array substrate 201.
  • the vertical projection partially covers the light-emitting layer 206; the hole transport layer 204 is located on the hole injection layer 203 and completely covers the hole injection layer 203; the light-emitting layer 206 covers the hole transport layer 204 and is not covered by the hole injection layer 203.
  • the anode 202; the electron transport layer 208 is located at the other end of the pixel opening region, partially covering the light emitting layer 206, and the vertical projection of the electron transport layer 208 on the array substrate 201 and the vertical projection of the hole injection layer 203 on the array substrate 201 are mutually
  • the electron injection layer 209 is located on the electron transport layer 208 and completely overlaps the electron transport layer 208; the cathode 2010 is located on the electron injection layer 209 and completely overlaps the electron injection layer 209.
  • the working principle of the above light-emitting device is as follows: as shown in FIG. 2, holes are injected from the anode 302, since the highest occupied orbital (HOMO) level of the anode 201 is generally higher than the HOMO level of the light-emitting layer 206, It is difficult to directly inject holes from the anode 202 to the light-emitting layer 206.
  • HOMO highest occupied orbital
  • holes are vertically entered into the light-emitting layer 206 through the hole injection layer 203 and the hole transport layer 204 laminated at one end of the pixel opening region; electrons are injected from the cathode 2010 through the electron injection layer 209 and the electron transport layer 208 due to the electron injection layer 209 and the electron transport layer 208 are laminated only at the other end of the pixel opening region opposite to the position where the hole injection layer 203 and the hole transport layer 204 are located, so that electrons enter the light emitting layer 206 perpendicularly from the other end opposite to the end where the holes enter.
  • the electrons and holes that have reached the light-emitting layer 206 move horizontally in the horizontal direction of the light-emitting layer 206, and then recombine to form excitons.
  • the excitons emit light from the excited state to the ground state. It can be seen that the display device provided by the embodiment provides a vertical flow of current flow from the original vertical flow only by arranging the hole unit and the electronic unit at both ends of the light-emitting layer 206, and then flows horizontally.
  • the OLED display device is of a top emission type
  • the light emitted from the light-emitting layer 206 is transmitted to the outside of the light-emitting device in the emission direction, and the vertical direction of the hole injection layer 203 and the electron injection layer 209 on the array substrate 201 in the light-emitting device.
  • the intermediate regions that do not overlap each other are projected, and the upwardly emitted light can be transmitted without passing through the electron transport layer 208, the electron injection layer 209, and the cathode 2010; the downwardly emitted light is transmitted to the anode 202, reflected by the anode 202, and the reflected light is reflected.
  • the light-emitting layer 206 is transported out without passing through the hole injection layer 203, the hole transport layer 204, the electron transport layer 208, the electron injection layer 209, and the cathode 2010. It can be seen that the number of layers required for the light emitted by the luminescent layer 206 in the embodiment to be transmitted outside the illuminating device is obtained by the prior art. It is greatly reduced, thereby reducing the absorption and scattering of light by the film layer, reducing the loss of light during transmission, improving the external quantum efficiency of the light-emitting device, and thereby improving the light-emitting efficiency of the OLED display device.
  • the light emitted by the light emitting layer 206 is transmitted outside the light emitting device in the emission direction without passing through the layers of the electronic unit; at the other end region where the electron injection layer 209 is located, The light emitted by the light-emitting layer 206 is transmitted outside the light-emitting device in the emission direction without passing through the layers of the hole unit. Therefore, the number of layers of light required to pass through at both ends is reduced, which is also helpful for improving the external quantum efficiency of the light-emitting device.
  • the light emitting device of the above OLED display device may further include: an electron blocking layer 205 between the hole transport layer 204 and the light emitting layer 206, and between the electron transport layer 208 and the light emitting layer 206.
  • the hole blocking layer 207 is used to block electrons from being transmitted from the light emitting layer 206 to the hole transport layer 204 and the anode 201
  • the hole blocking layer 207 is used to block holes from being transmitted from the light emitting layer 206 to the electron transport layer 208, thereby enabling light emission.
  • the electron and hole injection in the layer 206 is balanced, and the recombination probability of electrons and holes becomes large, the internal quantum efficiency of the light-emitting device is improved, and the light-emitting efficiency of the OLED display device is further improved.
  • the structure of the hole blocking layer and the electron blocking layer is different for the light emitting devices of different structures.
  • the electronic unit is located on the upper side of the light-emitting layer 206, and the vertical projection of the anode 202 on the array substrate 201 completely covers the light-emitting layer 206 on the array substrate 201.
  • the vertical projection of the electron blocking layer 205 on the array substrate 201 needs to completely cover the vertical projection of the luminescent layer 206 on the array substrate 201 to completely prevent electrons from entering the hole unit from the luminescent layer 206; the hole blocking layer
  • the vertical projection of 207 on the array substrate 201 only needs to partially cover the vertical projection of the luminescent layer 206 on the array substrate 201 (specifically, the vertical projection of the hole blocking layer 207 on the array substrate 201 and the electron transport layer 208 on the array substrate)
  • the vertical projection on 201 completely overlaps) to completely prevent holes from entering the electronic unit from the light-emitting layer 206; when the hole unit is located on the upper side of the light-emitting layer, the electronic unit is located on the lower side of the light-emitting layer, and the vertical projection of the cathode on the array substrate
  • the vertical projection of the hole blocking layer on the array substrate needs to completely cover the luminescent layer on the array substrate.
  • vertical projection to completely eliminate holes from the luminescent layer into the electronic unit vertical projection of the electron blocking layer on the array substrate only partially covers the vertical projection of the luminescent layer on the array substrate (specifically, the electron blocking layer is in the array
  • the vertical projection on the substrate completely overlaps with the vertical projection of the hole transport layer on the array substrate, so that electrons can be completely prevented from entering the hole unit from the light-emitting layer.
  • the OLED display device provided in this embodiment may further include: a protective layer 2011 covering the light emitting device to protect the light emitting device from corrosion and oxidation.
  • the embodiment further provides a method for fabricating the device.
  • the hole transport layer 204, the light emitting layer 206, and the electron transport layer 208 of the light emitting device are preferably formed by vapor deposition on the array substrate 201 using a fine metal mask.
  • the manufacturing method is as follows:
  • Step S1 The array substrate 201 is prepared as a control panel of the OLED display device.
  • the array substrate 201 prepared in this step may preferably be a low temperature polysilicon back sheet, and the prepared array substrate 201 may preferably include: a buffer layer, a polysilicon layer, a gate layer, a gate insulating layer, and an interlayer layer formed in sequence. Dielectric layer and source and drain electrode layers.
  • the array substrate 201 includes a plurality of pixels (ie, a plurality of pixel opening regions), and the structure of each pixel preferably includes six thin film transistors and two storage capacitors (ie, a 6T2C structure), in other embodiments of the present invention, A single pixel may also employ other pixel structures, such as 2T1C, 5T1C, 7T2C, and the like.
  • Step S2 forming an anode 202 of the light emitting device on the array substrate 201.
  • the step may specifically include depositing an anode material on the array substrate 201 to form an anode 202 that completely covers each pixel opening region on the array substrate 201.
  • the structure of the anode 202 may preferably be a film formed by sequentially laminating an indium tin oxide layer, a silver layer and an indium tin oxide layer; the thickness of the silver layer may preferably be 10 nm, silver. The thickness of the indium tin oxide layer on both sides of the layer may preferably be 50 nm. Among them, the silver layer is used to efficiently reflect light transmitted to the anode.
  • the structure of the anode can be designed correspondingly according to the type of light emitted.
  • the anode may not include a silver layer, and a reflective layer is disposed on the top of the light emitting device to reflect the upwardly transmitted light toward the array substrate.
  • Step S3 A hole injection layer 203 is formed on the anode 202.
  • the step may specifically include: placing the substrate in the high vacuum evaporation chamber, and depositing the hole injection layer material on the anode 202 by using a fine metal mask having a pattern of the hole injection layer 203 to form the hole injection layer 203.
  • the hole injection layer 203 partially covers the anode 202.
  • the material of the hole injection layer may preferably be copper phthalocyanine, PEDT (poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate)), PSS (sodium polystyrene sulfonate), and TNANA. Etc. to ensure that holes can be injected efficiently.
  • Step S4 A hole transport layer 204 is formed on the hole injection layer 203.
  • the substrate is placed in a high vacuum evaporation chamber, and a hole transport layer material is evaporated on the hole injection layer 203 by using a fine metal mask having a pattern of the hole transport layer 204; the hole transport layer 204 is completely The hole injection layer 203 is covered.
  • the hole transport layer material may preferably be NPB (N,N'-diphenyl-N,N'-bis(1-naphthyl)-1) and a biphenyldiamine derivative, etc., to ensure that the holes can Smooth transmission.
  • NPB N,N'-diphenyl-N,N'-bis(1-naphthyl)-1
  • biphenyldiamine derivative etc.
  • Step S5 An electron blocking layer 205 is formed on the hole transport layer 204 and the uncovered anode 202.
  • the step may specifically include: placing the substrate in the high vacuum evaporation chamber, and evaporating the electron blocking layer material on the hole transport layer 204 and the uncovered anode 202 by using a fine metal mask having a pattern of the electron blocking layer 205
  • the vertical projection of the electron blocking layer 205 on the array substrate 201 completely overlaps with the vertical projection of the light emitting layer 206 on the array substrate 201 to ensure that the electron blocking layer 205 can block electrons from being transmitted from the light emitting layer 206 to the hole transport layer 204 and
  • the anode 202 does not block the transport of holes.
  • Step S6 A light-emitting layer 206 is formed on the electron blocking layer 205.
  • the substrate is placed in a high vacuum evaporation chamber, and the light emitting layer material is evaporated on the electron blocking layer 205 by using a fine metal mask having a pattern of the light emitting layer 206; the light emitting layer 206 completely covers the electron blocking layer 205.
  • the luminescent color of the luminescent layer 206 is the same as the color of the sub-pixel; preferably, the luminescent layer may be a red luminescent layer, a green luminescent layer or a blue luminescent layer; the luminescent layer 206 may comprise a fluorescent luminescent layer and a phosphorescent luminescent layer.
  • the fluorescent light-emitting layer material may preferably be a DCJTB-like derivative, a star-shaped DCB derivative, a polycyclic aromatic hydrocarbon, a non-doped red fluorescent material containing a DA structure, or the like;
  • the luminescent layer may preferably be a quinacridone derivative, a coumarin derivative, a polycyclic aromatic hydrocarbon or the like; and for the blue luminescent layer, the fluorescent material may preferably be a diaryl fluorene derivative.
  • Phosphorescent luminescent host material of the phosphorescent luminescent layer of the red, green and blue luminescent layers may preferably be a carbazole-containing group and have electron transporting properties, such as -4-4'-diamine), DSA-Ph and IDE-102, etc.
  • the main illuminant material or the like, and the phosphorescent dopant material may preferably be a platinum complex, a ruthenium complex, a ruthenium complex, a ruthenium complex, and FIrpic.
  • Step S7 A hole blocking layer 207 is formed on the light emitting layer 206.
  • the step may specifically include: placing the substrate in the high vacuum evaporation chamber, and vapor-depositing the hole blocking layer material on the light emitting layer 206 by using a fine metal mask having a pattern of the hole blocking layer 207;
  • the hole blocking layer 207 partially covers the light emitting layer 206, and the vertical projection of the formed hole blocking layer 207 on the array substrate 201 and the vertical projection of the hole injection layer 203 on the array substrate 201 do not overlap each other.
  • the hole blocking layer material may preferably be BCP (block copolymer) or the like to ensure that the hole blocking layer 207 can block holes from being transmitted from the light emitting layer 206 to the electron transport layer 208 without blocking the electron transport. .
  • Step S8 An electron transport layer 208 is formed on the hole blocking layer 207.
  • the step may specifically include: placing the substrate in the high vacuum evaporation chamber, and evaporating the electron transport layer material on the hole blocking layer 207 by using a fine metal mask having a pattern of the electron transport layer 208; the electron transport layer 208 is completely The hole blocking layer 207 is covered.
  • the material of the above electron transport layer may preferably be a quinoline derivative, a diazonium derivative, a silicon-containing heterocyclic compound, a porphyrin derivative, a phenanthroline derivative or a perfluorinated oligomer, etc., to ensure smooth electronics. transmission.
  • Step S9 An electron injection layer 209 is formed on the electron transport layer 208.
  • the step may specifically include: placing the substrate in a high vacuum evaporation chamber, and depositing an electron injection layer material on the electron transport layer 208 by using a fine metal mask having a pattern of the electron injection layer 209; the electron injection layer 209 is completely covered Electron transport layer 208.
  • the electron injecting layer material may preferably be an alkali metal oxide such as lithium oxide, lithium metaborate, potassium silicate or cesium carbonate, an alkali metal acetate or an alkali metal fluoride to ensure efficient injection of electrons.
  • an alkali metal oxide such as lithium oxide, lithium metaborate, potassium silicate or cesium carbonate
  • an alkali metal acetate or an alkali metal fluoride to ensure efficient injection of electrons.
  • Step S10 A cathode 2010 is formed on the electron injection layer 209.
  • the substrate is placed in a high vacuum evaporation chamber, and an electron injection layer material is vapor deposited on the cathode 2010 using a fine metal mask having a cathode 2010 pattern; the cathode 2010 completely covers the electron injection layer 209.
  • the cathode material may preferably be an aluminum lithium alloy or a magnesium silver alloy.
  • Step S11 The protective layer 2011 is covered on the light emitting device formed through the step S10.
  • the protective layer 2011 may be formed by using an open mask.
  • the vertical projection of the protective layer 2011 on the array substrate 201 completely overlaps with the vertical projection of the luminescent layer 206 on the array substrate 201 to protect the entire illuminating device from external corrosion. And oxidation.
  • the OLED display device and the manufacturing method provided above are all illustrated by taking the device shown in FIG. 2 as an example. According to the structure and the manufacturing method of the display device provided by the embodiment, those skilled in the art may further obtain a hole transport layer having a hole transport layer on a side of the light-emitting layer facing the array substrate, and the electron transport layer is located away from the array substrate.
  • a hole transport layer having a hole transport layer on a side of the light-emitting layer facing the array substrate, and the electron transport layer is located away from the array substrate.
  • the vertical projections of the anode and cathode of the OLED display device on the array substrate partially cover the pixel opening region, and completely coincide with the vertical projections of the hole transport layer and the electron transport layer on the array substrate, respectively.
  • the light emitting device is of a top emission type
  • a reflective layer covering each pixel opening region may be formed between the array substrate and the light emitting device for reflecting the light emitted downward from the light emitting layer; the reflective layer material is preferably selectable.
  • Aluminum or silver; other structures can be set according to the type of OLED, so that part of the anode material and part of the electron blocking layer material can be saved.
  • the structure of the OLED display device may further be as follows: as shown in FIG. 3, the hole transport layer 304 is located on a side of the light emitting layer 306 facing away from the array substrate 301, and the electron transport layer 308 is located in the light emitting layer.
  • the layer 306 faces the side of the array substrate 301; the anode 302 completely overlaps the hole transport layer 304, and the vertical projection of the cathode 3010 and the light-emitting layer 306 on the array substrate 301 completely overlaps.
  • the hole unit including the hole transport layer 304, the hole injection layer 303, and the anode 302 is located on the upper side of the light-emitting layer 306; the electronic unit including the electron transport layer 308, the electron injection layer 309, and the cathode 3010 is located at the light-emitting layer 306.
  • the vertical projection of the electron blocking layer 305 between the light emitting layer 306 and the hole transport layer 304 on the light emitting layer 306 may partially cover the light emitting layer 306, and the electron blocking layer 305 completely overlaps with the hole transport layer 304;
  • the vertical projection of the hole blocking layer 307 between the electron transport layer 308 and the light emitting layer 306 on the array substrate 301 can completely cover the vertical projection on the array substrate 301 of the light emitting layer 306, and the hole blocking layer 307 and the light emitting layer 306 are completely Overlapping; the protective layer 3011 completely covers the light emitting device. Since the vertical projections of the hole cells and the electron cells on the light-emitting layer 306 do not overlap each other, the OLED display device can achieve the same advantageous effects as the device shown in FIG.
  • the hole transport layer and the electron transport layer are preferably located on the same side of the light-emitting layer (ie, the hole transport layer, the hole injection layer, and the anode belonging to the hole unit and the electron transport layer, the electron injection layer, and the cathode belonging to the electron unit)
  • the anode may be completely overlapped with the hole transport layer
  • the cathode may completely overlap with the electron transport layer (ie, the vertical projections of the anode and the cathode on the light-emitting layer partially cover the pixel opening region, respectively, and respectively With the hole transport layer and the electron transport layer The vertical projections on the luminescent layer are completely coincident).
  • an OLED display device in which both a hole unit and an electronic unit are located on the lower side of the light-emitting layer 406 is taken as an example.
  • the hole unit and the electronic unit are respectively located at two ends of the light-emitting layer 406, and both The vertical projections on the luminescent layer 406 partially cover the luminescent layer 406, ie, the two do not overlap each other; the anode 402, the hole injection layer 403, the hole transport layer 404, and the electron blocking layer 405 in the hole cells completely overlap.
  • the cathode 4010, the electron injection layer 409, the electron transport layer 408, and the hole blocking layer 407 are also completely overlapped in the electron unit; the light emitting layer 406 covers the surface of the hole unit, the electron unit, and the array substrate 401 not covered by the two; 4011 is overlaid on the light emitting device.
  • the structure and position of the reflective layer for reflecting light can be correspondingly designed according to the type of light emitted by the OLED display device, for example, for a top emission type display device, forming an array substrate and forming a hole unit and A reflective layer covering each pixel opening area is formed between the electronic units.
  • the number of layers required to pass the light generated by the light-emitting layer 406 of the OLED display device in the emission direction to the outside of the device is reduced, and the loss of light during transmission is reduced.
  • the light extraction efficiency is improved.
  • the present embodiment further provides a hole unit including a hole transport layer 504, a hole injection layer 503, and an anode 502, and an electronic unit including the electron transport layer 508, the electron injection layer 509, and the cathode 5010.
  • An OLED display device on the upper side of the light emitting layer 506. The layers in the hole cells completely overlap, and the layers in the electronic unit also completely overlap.
  • the light emitting layer 506 covers each pixel opening region; the electron blocking layer 505 is located between the light emitting layer 506 and the hole transport layer 504, completely overlaps with the hole transport layer 504, and the vertical projection on the light emitting layer 506 is partially Covering the vertical projection on the array substrate 501 of the light-emitting layer 506; the hole blocking layer 507 is located between the electron transport layer 508 and the light-emitting layer 506, completely overlapping the electron transport layer 508, and partially covering the vertical projection on the array substrate 501 The vertical projection on layer 506 of array substrate 501; protective layer 5011 overlying the light emitting device.
  • the number of layers required to pass the light generated by the light-emitting layer 506 of the display device to the outside of the device in the emission direction is reduced, the loss of light during the transmission is reduced, and the light-emitting efficiency is improved.

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CN104241330A (zh) 2014-12-24
JP2017535083A (ja) 2017-11-24
US20160254322A1 (en) 2016-09-01
JP6567670B2 (ja) 2019-08-28
KR101728622B1 (ko) 2017-04-19
KR20160041847A (ko) 2016-04-18
EP3190638B1 (en) 2021-09-15
EP3190638A4 (en) 2018-05-02
EP3190638A1 (en) 2017-07-12
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US9997577B2 (en) 2018-06-12

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