WO2016031965A1 - Laser à émission par la surface à cristaux photoniques bidimensionnels - Google Patents

Laser à émission par la surface à cristaux photoniques bidimensionnels Download PDF

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WO2016031965A1
WO2016031965A1 PCT/JP2015/074439 JP2015074439W WO2016031965A1 WO 2016031965 A1 WO2016031965 A1 WO 2016031965A1 JP 2015074439 W JP2015074439 W JP 2015074439W WO 2016031965 A1 WO2016031965 A1 WO 2016031965A1
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refractive index
index region
different refractive
photonic crystal
sub
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PCT/JP2015/074439
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English (en)
Japanese (ja)
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野田　進
北川　均
永 梁
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国立大学法人京都大学
ローム株式会社
浜松ホトニクス株式会社
三菱電機株式会社
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Publication of WO2016031965A1 publication Critical patent/WO2016031965A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Definitions

  • the present invention relates to a semiconductor laser, and more particularly to a two-dimensional photonic crystal surface emitting laser that amplifies light using a two-dimensional photonic crystal.
  • Semiconductor lasers have many advantages such as small size, low cost, low power consumption and long life, and are widely used in a wide range of fields such as light sources for optical recording, light sources for communication, laser displays, laser printers, laser pointers, and the like.
  • a laser whose optical output exceeds at least 1 W is required.
  • semiconductor lasers currently in practical use have not reached this output for the following reasons. Therefore, at present, in the field of laser processing, a gas laser such as a carbon dioxide laser is used instead of a semiconductor laser.
  • the reason why the light output in the semiconductor laser currently in practical use is small is as follows.
  • the cross-sectional area (emission area) of the laser beam emitted from the element is larger.
  • the cross-sectional area (spot area) of the laser beam applied to the workpiece is small. Therefore, ideally, it is desired that the laser beam emitted from the laser source reaches the workpiece as it is without spreading.
  • the larger the emission area the larger the spread angle of the laser beam, and the wavefront of the laser beam is disturbed.
  • Patent Document 1 describes a two-dimensional photonic crystal surface emitting laser, which is a kind of semiconductor laser.
  • the two-dimensional photonic crystal surface emitting laser has a two-dimensional photonic crystal in which a different refractive index region having a refractive index different from that of a plate-like base material is periodically arranged, and an active layer.
  • the different refractive index region is typically composed of holes formed in the base material.
  • only light having a predetermined wavelength corresponding to the period of the different refractive index region is amplified from the light generated in the active layer when current is injected into the active layer, and laser oscillation is performed.
  • the laser beam is emitted in a direction perpendicular to the two-dimensional photonic crystal.
  • the two-dimensional photonic crystal surface emitting laser emits light (surface emission) from within a certain range in the two-dimensional photonic crystal, the emission area is larger than that of the edge emitting semiconductor laser, and the light output is easily increased.
  • the divergence angle can also be reduced.
  • Two-dimensional photonic crystals in the two-dimensional photonic crystal surface emitting laser described in Patent Document 1 are known.
  • different refractive index regions in which a main different refractive index region (main vacancies) and a sub different refractive index region (sub vacancies) are spaced apart by a predetermined distance are arranged in a square lattice pattern.
  • such a different refractive index region composed of a main different refractive index region and a sub different refractive index region is referred to as a “different refractive index region pair”.
  • the light reflected by the main different refractive index region and the light reflected by the sub different refractive index region are weakened by interference. Since the reflectance of the light as a whole decreases, it is possible to prevent light from being localized in a partial region in the two-dimensional photonic crystal. Thereby, in the whole two-dimensional photonic crystal, the lights reflected by adjacent pairs of different refractive index regions are strengthened by interference, and the light output is increased.
  • a base material is prepared by using a deposition method such as a CVD method, and then, using a photolithography and an etching method, an empty space in a different refractive index region is formed.
  • a two-dimensional photonic crystal is produced by forming holes.
  • an adjacent layer is formed on the two-dimensional photonic crystal.
  • the two-dimensional photonic crystal is heated to a high temperature and the whole hole is deformed. There is. Therefore, many techniques for producing the adjacent layer by using a deposition method such as a CVD method are employed.
  • the material of the adjacent layer enters the vicinity of the adjacent layer in the pores.
  • the hole has a size that is almost the same as that formed by the etching method at a position far from the adjacent layer, whereas the plane shape becomes smaller in the vicinity of the adjacent layer. Therefore, the finally produced void has a three-dimensional shape that is so-called tapered toward the adjacent layer as a whole, and its volume is smaller than when it is formed by the etching method.
  • the filling factor which is the ratio of the volume of the different refractive index region (hole) in the two-dimensional photonic crystal, more precisely the volume occupied by the different refractive index region in the two-dimensional photonic crystal, is the surface emission of the two-dimensional photonic crystal. It is a parameter that affects the intensity of the laser light emitted from the laser. As described above, since the volume of the pores is reduced due to a problem during production, in order to produce the pores so that the filling factor is optimized, when forming the pores in the base material, The size needs to be larger than the optimum design value.
  • the problem to be solved by the present invention is to provide a two-dimensional photonic crystal surface emitting laser having a pair of different refractive index regions suitable for actual manufacturing and capable of obtaining a high light output.
  • the first aspect of the two-dimensional photonic crystal surface emitting laser according to the present invention is a plate-like base material having a main different refractive index different from that of the base material.
  • a two-dimensional photonic crystal in which a pair of different refractive index regions each comprising a region and a secondary different refractive index region having a planar shape smaller in area than the main different refractive index region are arranged on lattice points of a square lattice having a period length a;
  • a two-dimensional photonic crystal surface emitting laser having an active layer provided on one side of the base material, The distance between the center of gravity of the main different refractive index region and the center of gravity of the sub different refractive index region is 0.25a to 0.28a, When the sub-refractive index region is moved in parallel so that the center of gravity of the sub-refractive index region overlaps the center of gravity of the main different index of refraction region, 80% or more of the region is
  • the plate-like base material has a main different refractive index region having a refractive index different from that of the base material, and the main different refractive index region.
  • the two-dimensional photonic crystal surface emitting laser according to the present invention has a pair of different refractive index regions including a main different refractive index region and a sub different refractive index region.
  • the distance between the center of gravity of the main different refractive index region and the center of gravity of the sub different refractive index region is 0.25a to 0.28a. This is because light generated in the active layer attenuates light reflected in the main different refractive index region and light reflected in the sub different refractive index region in the two-dimensional photonic crystal due to interference, so that the light is reflected. This is to prevent localized in a part of the two-dimensional photonic crystal.
  • the sub-refractive index region is (virtually) translated so that the center of gravity of the sub-refractive index region overlaps the center of gravity of the main different refractive index region.
  • 80% or more of the sub-different refractive index regions have a shape overlapping the main different refractive index region.
  • overlapping region the region where the main different-refractive index region and the sub-refractive index region overlap
  • overlapping region the region where both do not overlap
  • non-overlapping region which is referred to as “non-overlapping region”
  • the non-overlapping region does not protrude greatly to the other side in either one of the main different refractive index region and the sub different refractive index region. Therefore, it becomes difficult to connect the main different refractive index region and the sub different refractive index region at the time of production.
  • the present invention even when the main different refractive index region and the sub different refractive index region have an asymmetric shape with respect to the thickness direction of the base material due to the above-described manufacturing problems, the volume of the different refractive index region is reduced. It is possible to prevent the main different refractive index region and the sub different refractive index region from being connected while setting an appropriate value.
  • the smaller the non-overlapping region the higher the effect of preventing localization by weakening the light reflected by the main different refractive index region and the light reflected by the sub different refractive index region by interference.
  • the smaller the non-overlapping region the easier it is to generate laser oscillation in the fundamental mode, and it is possible to suppress unnecessary laser oscillation in higher order modes.
  • the planar shape of the main different refractive index region and the second different refractive index region is a triangle whose maximum angle is larger than 60 °, that is, a triangle other than a regular triangle.
  • a main different refractive index region having a planar shape is used. This makes it possible to increase the intensity of the laser emitted to the outside of the two-dimensional photonic crystal surface emitting laser as compared with the case where a main different refractive index region such as a circle or equilateral triangle is used, and to generate a fundamental mode laser oscillation. Can easily occur, and useless laser oscillation in a higher mode can be suppressed.
  • the planar shapes of the main different refractive index region and the sub different refractive index region may be similar.
  • the sub-different refractive index regions are all overlapping regions.
  • the main different refractive index region and the sub different refractive index region have a non-similar planar shape. This makes it possible to increase the intensity of the laser emitted to the outside of the two-dimensional photonic crystal surface emitting laser as compared with the case where similar main refractive index regions and sub-different refractive index regions are used. Therefore, it is possible to suppress unnecessary laser oscillation of higher-order modes.
  • Non-patent Documents 1 and 2 A two-dimensional photonic crystal surface emitting laser using the prepared two-dimensional photonic crystal has been developed (Non-patent Documents 1 and 2). According to this two-dimensional photonic crystal surface emitting laser, high characteristics such as an optical output of 1.5 W and a beam divergence angle of 3 ° or less can be obtained.
  • each of the main different refractive index region and the sub different refractive index region has a maximum right angle and a rectangular side having a square lattice. It is desirable to adopt a configuration that is parallel to each other.
  • f 1 is the filling factor of the main different refractive index region
  • f 2 is the filling factor of the secondary different refractive index region
  • the filling factor of each different refractive index region (pair) is the different refractive index in the two-dimensional photonic crystal.
  • the ratio f 2 / f of the filling factor f 2 of the sub-refractive index region and the filling factor f of the pair of different refractive index regions is preferably 0.1 or more and less than 0.5.
  • the main different refractive index region and the sub different refractive index region are holes, it is difficult to avoid an asymmetric shape with respect to the thickness direction of the base material due to manufacturing problems.
  • a solid made of a material different from the base material is used for the main different refractive index region and the sub different refractive index region, the main different refractive index region and the second different refractive index region are symmetrical with respect to the thickness direction of the base material. It is relatively easy to form. That is, for a two-dimensional photonic crystal, a base material is first prepared, holes are formed in the base material at positions where the main different refractive index regions and the sub different refractive index regions are provided, and the holes are filled with the solid.
  • the material of the layer does not enter the main different refractive index region and the sub different refractive index region.
  • the symmetry of the main different refractive index region and the sub different refractive index region in the thickness direction can be maintained.
  • the main different refractive index region and the sub different refractive index region made of glassy SiO 2 can be suitably produced by the SOG (Spin on Glass) method.
  • the SOG method generally refers to a method in which a film of a solution in which a material is dissolved in a solvent is formed on a surface to be coated by spin coating and then heated to form a glass film made of the material.
  • a raw material solution containing the constituent atoms of the solid such as silanol (SiOH 4 ) is used as the vacancies. It is applied to the surface of the base material where it is formed and penetrates into the pores, then the raw material solution is removed from the surface of the base material while leaving the raw material solution in the pores, and then heated to open the pores.
  • a method of forming a glassy solid (SiO 2 or the like) from the raw material solution can be adopted.
  • the first layer which is a part of the base material, is produced by the MOCVD method, Forming holes corresponding to the main different refractive index region and the sub different refractive index region in the first layer;
  • the second layer which is the remaining part of the base material, can be manufactured on the first layer by a method including a step of manufacturing by MOCVD.
  • the two-dimensional photonic crystal surface emitting laser according to the present invention is Producing an etch stop layer made of a material having higher resistance to a predetermined etchant than the material of the base material; Producing the base material on the etch stop layer; It can also be manufactured by a method having a step of forming holes corresponding to the main different refractive index region and the sub different refractive index region in the base material by etching the base material using the etching agent. As a result, a two-dimensional photonic crystal surface emitting laser having a main different refractive index region and a sub different refractive index region composed of holes of the same depth is manufactured.
  • a two-dimensional photonic crystal surface having a pair of different refractive index regions which is suitable for actual manufacturing in that the main different refractive index region and the second different refractive index region are difficult to be connected, and can obtain high light output.
  • a light emitting laser is obtained.
  • the perspective view which shows the Example of the two-dimensional photonic crystal surface emitting laser which concerns on this invention.
  • (c) is a longitudinal sectional view of a two-dimensional photonic crystal.
  • the longitudinal cross-sectional view which shows the other example of a two-dimensional photonic crystal.
  • the figure for demonstrating the principle in which the light of a predetermined wavelength is amplified in the two-dimensional photonic crystal in the two-dimensional photonic crystal surface emitting laser of a present Example The graph which shows the result of having calculated the radiation coefficient (alpha) v about the some example from which the filling factor differs in the two-dimensional photonic crystal surface emitting laser of a present Example.
  • the graph which shows the result of having calculated the output of the laser beam in the two-dimensional photonic crystal surface emitting laser of a present Example The longitudinal cross-sectional view which shows two models from which the thickness of the main different refractive index area
  • a two-dimensional photonic crystal plane according to an embodiment of the present invention which is composed of a solid material different from the base material and has a main different refractive index region and a sub different refractive index region that are symmetrical with respect to the thickness direction of the base material.
  • the two-dimensional photonic crystal surface emitting laser 10 of this embodiment includes a first electrode 15, a first cladding layer 141, an active layer 11, a spacer layer 13, and a two-dimensional photonic crystal layer. 12, the second cladding layer 142, and the second electrode 16 are stacked in this order.
  • the order of the active layer 11 and the two-dimensional photonic crystal layer 12 may be opposite to the above.
  • the first electrode 15 is shown as the upper side and the second electrode 16 is shown as the lower side.
  • the orientation of the two-dimensional photonic crystal surface emitting laser 10 in use is shown in this figure. Is not limited.
  • the configuration of each layer and electrode will be described. In the following, the configuration other than the two-dimensional photonic crystal layer 12 will be described first, and then the configuration of the two-dimensional photonic crystal layer 12 will be described in detail.
  • the active layer 11 emits light having a predetermined wavelength band when charges are injected from the first electrode 15 and the second electrode 16.
  • the material of the active layer 11 is an InGaAs / AlGaAs multiple quantum well (emission wavelength band: 935 to 945 nm) in this embodiment, but is not limited to this material in the present invention.
  • the active layer 11 has a square shape with a thickness of about 2 ⁇ m, and one side of the square is the same as or slightly larger than the second electrode 16 or 16A described later. However, the active layer 11 is not limited to this size in the present invention, and may be other shapes such as a circular shape and a hexagonal shape.
  • the spacer layer 13 is not an essential component in the present invention, but is provided to connect the active layer 11 and the two-dimensional photonic crystal layer 12 of different materials.
  • the material of the spacer layer 13 is AlGaAs in the present embodiment, but is appropriately changed according to the materials of the active layer 11 and the two-dimensional photonic crystal layer 12.
  • the first cladding layer 141 and the second cladding layer 142 are not essential components in the present invention, but connect the first electrode 15 and the active layer 11, and the second electrode 16 and the two-dimensional photonic crystal layer 12. It has a role of facilitating injection of current from the first electrode 15 and the second electrode 16 into the active layer 11. In order to fulfill these roles, a p-type semiconductor is used as the material of the first cladding layer 141, and an n-type semiconductor is used as the material of the second cladding layer 142.
  • the first cladding layer 141 has a two-layer structure of a layer made of p-GaAs and a layer made of p-AlGaAs in order from the first electrode 15X side.
  • the second cladding layer 142 is formed on the second electrode 16 side.
  • the layers have a two-layer structure of a p-GaAs layer and a p-AlGaAs layer (both are not shown).
  • the first clad layer 141 and the second clad layer 142 are not limited to the above materials in the present invention.
  • the planar dimensions of the first cladding layer 141 and the second cladding layer 142 are the same as those of the base material 121 of the active layer 11 and the two-dimensional photonic crystal layer 12.
  • the thickness is 2 ⁇ m for the first cladding layer 141 and 200 ⁇ m for the second cladding layer 142.
  • the first electrode 15 has a square shape with a side length L of about 200 ⁇ m, and is smaller than the active layer 11 and a two-dimensional photonic crystal 123 described later.
  • a reflective layer (not shown) made of a metal opaque to the laser light is provided around the first electrode 15 with an insulator between the first electrode 15.
  • the reflection layer has a role of reflecting the laser beam generated by the two-dimensional photonic crystal surface emitting laser 10 together with the first electrode 15 and emitting the laser beam to the outside from the second electrode 16 side.
  • the second electrode 16 is an n-type semiconductor in this embodiment, and is formed of indium tin oxide (ITO), which is a material transparent to the laser beam.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the second electrode 16 has a square shape with a side of about 800 ⁇ m, and has a planar dimension that is the same as or slightly smaller than the base material 121 of the active layer 11 and the two-dimensional photonic crystal layer 12 described below. Yes.
  • a second electrode 16A shown in FIG. 1 (b) may be used instead of using the second electrode 16 made of the above-described transparent electrode.
  • FIG. 1B (a) is shown upside down.
  • the second electrode 16A has a configuration in which the center of a square plate member made of a metal that is opaque to laser light is cut out in a square shape.
  • the portion where the plate-like member is cut out is called a window portion 161A
  • the portion where the plate-like member is left is called a frame portion 162A.
  • the square of the plate-like member (outside the frame portion 162A) has a side of 800 ⁇ m
  • the square of the window portion 161A has a side of 600 ⁇ m.
  • the first electrode 15A has a square shape with a side of 200 ⁇ m, which is smaller than the plate-like member of the second electrode 16A.
  • the two-dimensional photonic crystal layer 12 is a plate-shaped base material 121 in which different refractive index region pairs 122 having different refractive indexes are arranged in a square lattice pattern.
  • the period length a of the square lattice is 287 nm corresponding to the wavelength in the emission wavelength band in the active layer 11 in consideration of the refractive index in the two-dimensional photonic crystal layer 12.
  • the material of the base material 121 is GaAs, the planar dimension is the same as that of the active layer 11 and the like, and the thickness is about 300 nm.
  • the material and dimensions of the base material 121 are not limited to this example.
  • the different refractive index region pair 122 includes a main different refractive index region 1221 and a sub different refractive index region 1222. Both the main different refractive index region 1221 and the sub different refractive index region 1222 are holes formed in the base material 121.
  • the planar shape of the main different refractive index region 1221 is a right isosceles triangle
  • the planar shape of the sub different refractive index region 1222 is a right isosceles triangle whose area is smaller than that of the main different refractive index region 1221.
  • the maximum angle in the planar shape of the main different refractive index region 1221 is a right angle 1221A
  • the maximum angle in the planar shape of the sub different refractive index region 1222 is a right angle 1222A.
  • the opposite side 1221B of the main different refractive index region 1221 at the right angle 1221A is disposed adjacent to the right angle 1222A of the sub different refractive index region 1222.
  • the first orthogonal side 1221C1 which is one of the two orthogonal sides of the main different refractive index region 1221, is parallel to the x direction (FIG.
  • the second orthogonal side 1221C2 is parallel to the y direction (the same figure) perpendicular to the x direction.
  • the first orthogonal side 1222C1 and the second orthogonal side 1222C2 of the sub-different refractive index region 1222 are also arranged in the same direction.
  • the center of gravity G 2 of the sub-different refractive index region 1222 is arranged at a position shifted from the center of gravity G 1 of the main different refractive index region 1221 by 0.25a in the x direction and 0.25a in the y direction (FIG. 2B). ). That is, the distance between the center of gravity G 2 of the center of gravity G 1 and the sub-modified refractive index region 1222 of the main modified refractive index area 1221 in this example is 0.25 ⁇ 2 1/2 a.
  • the secondary modified refractive index region 1222 in the x-direction -0.25A As the center of gravity G 1 of the center of gravity G 2 and the main modified refractive index area 1221 of the sub-modified refractive index region 1222 overlap, the secondary modified refractive index region 1222 in the x-direction -0.25A, only virtually -0.25A in y-direction When translated, the entire sub-refractive index region 1222 (100%) overlaps the main different refractive index region 1221.
  • the longitudinal cross-sectional shapes of the main different refractive index region 1221 and the sub different refractive index region 1222 have a depth different from that of the main different refractive index region 1221 in the depth from the second cladding layer 142 side.
  • the refractive index region 1222 is shallower. This is because the main different refractive index region is formed by photolithography and etching from the side on which the second clad layer 142 is to be formed in the stage after the base material 121 is formed and before the second clad layer 142 is formed.
  • the sub-refractive index region 1222 having a smaller area is less likely to allow the etchant to enter the holes, thereby reducing the etching depth. It depends.
  • the first layer which is a part of the base material 121 is formed and the holes are formed in the first layer.
  • a second layer that is the remaining part of the base material 121 may be formed on the first layer.
  • the depth of these holes is not limited to this example in the present invention.
  • a material having a high resistance to an etchant as the material of the spacer layer 13 and performing etching for a sufficiently long time when producing the main different refractive index region 1221 and the sub different refractive index region 1222.
  • the holes in the main different refractive index region 1221 and the sub different refractive index region 1222 can be made the same depth (FIG. 3A).
  • the spacer layer 13 when hydrogen iodide (HI) gas is used as an etchant, the above-described AlGaAs-based material is used as the material of the spacer layer 13, and when chlorine (Cl 2 ) gas is used as an etchant, the spacer The material of the layer 13 is preferably an InGaP material.
  • HI hydrogen iodide
  • Cl 2 chlorine
  • an etch stop layer 17 may be provided between the two-dimensional photonic crystal layer 12 and the spacer layer 13 as shown in FIG.
  • the material of the etch stop layer 17 may be an AlGaAs type material if the etching agent is HI gas, and an InGaP type material if the etching agent is Cl 2 gas. If the etch stop layer 17 is used, a material suitable for the combination with the active layer 11 and the two-dimensional photonic crystal layer 12 can be used for the spacer layer 13 without considering the influence of the etching agent.
  • the holes of the main different refractive index region 1221 and the sub different refractive index region 1222 of this embodiment have inner walls perpendicular to the plate-like base material 121 at positions close to the spacer layer 13, but close to the second cladding layer 142. In this position, it has a shape that tapers toward the second cladding layer 142 side. This is because when the second cladding layer 142 is formed by using the MOCVD method after the holes of the main different refractive index region 1221 and the sub different refractive index region 1222 are formed in the base material 121, This is because the adhering portion 142A formed by the material entering the pores and adhering to the inner wall is formed.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 are directed toward the first cladding layer 141 side. It has a tapered shape.
  • the volumes of the main different refractive index region 1221 and the sub different refractive index region 1222 are defined by the volume of holes excluding the adhesion portion 142A. This is because the difference in refractive index between the base material 121 and the attachment portion 142A (second clad layer 142) is sufficiently larger than the difference in refractive index between the base material 121 and the second clad layer 142 and holes (air or vacuum). This is because the adhesion portion 142A can be equated with the base material 121 in terms of refractive index because of its small refractive index.
  • the ratio f 1 (filling factor of the main different refractive index area 1221) occupied by the main different refractive index area 1221 in the two-dimensional photonic crystal is 0.10
  • the ratio f 2 (secondary refractive index area 1222 accounts).
  • the filling factor of the different refractive index region 1222) was 0.06. Accordingly, the filling factor (f 1 + f 2 ) of the different refractive index region pair 122 is 0.16.
  • the operation of the two-dimensional photonic crystal surface emitting laser 10 (or 10A) of the present embodiment will be described with reference to FIGS.
  • current is injected from both electrodes into the active layer 11.
  • the active layer 11 is narrower than the second electrode 16 and the first electrode 15 (15A).
  • Current (charge) is intensively injected into a range wider than one electrode 15 (current injection range 111) (FIGS. 4A and 4B). Thereby, light emission having a wavelength within a predetermined wavelength band is generated from the current injection range 111 of the active layer 11.
  • the generated light is selectively amplified as described later in the two-dimensional photonic crystal of the two-dimensional photonic crystal layer 12 and laser oscillation occurs.
  • the oscillated laser beam is emitted to the outside from the first electrode 15 side.
  • the laser light passes through the first electrode 15 which is a transparent electrode, and in the two-dimensional photonic crystal surface emitting laser 10A, the laser light passes through the window portion 161A. Note that laser light that travels toward the second electrode 16 is reflected by the second electrode 16 and finally exits from the first electrode 15 side to the outside as described above.
  • the light amplification in the two-dimensional photonic crystal in this embodiment will be described.
  • the light introduced into the two-dimensional photonic crystal layer 12 from the current injection range 111 of the active layer 11 propagates in a direction parallel to the two-dimensional photonic crystal layer 12 and is determined by the shape of the different refractive index region pair 122 and the like. Reflected in the direction of 180 ° by the different refractive index region pair 122 at a rate.
  • the light reflected by a certain pair of different refractive index regions 122 and the light reflected by an adjacent pair of different refractive index regions 122 have an optical path length difference of 2a (FIG. 5).
  • the light whose wavelength is a in the two-dimensional photonic crystal among the light emitted from the active layer 11 is intensified by interference. Then, this light interference repeatedly occurs in a wide area of the two-dimensional photonic crystal, so that laser oscillation occurs.
  • the reflectivity in the different refractive index region pair 122 is too high, light is localized in the two-dimensional photonic crystal. Therefore, by disposing the main different refractive index region 1221 and the sub different refractive index region 1222 by 0.25a in the x direction and the y direction, respectively, when light is reflected by each pair of different refractive index regions 122, The light reflected by the different refractive index region 1221 and the light reflected by the sub-different refractive index region 1222 are weakened by interference because the optical path length difference is 0.5a, which is a value corresponding to a half wavelength of light of wavelength a.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 have different volumes and have different reflection intensities, these two lights are not completely lost due to interference. Due to this interference, the reflectance of the entire different refractive index region pair 122 can be lowered. Therefore, amplification of light due to interference between lights reflected by the adjacent pair of different refractive index regions 122 can be generated in a wide region in the two-dimensional photonic crystal.
  • region described so far is the same as the effect
  • FIG. is there.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 are shifted by a distance of 0.25a in the x direction and the y direction, respectively, but the light reflected by the main different refractive index region 1221 and the sub different refractive index region 1222 are shifted. Therefore, these distances may deviate from 0.25a and may be values within a range greater than 0.25a and less than or equal to 0.28a.
  • the secondary different refractive index is such that the centroid G 2 of the secondary different refractive index region 1222 overlaps the centroid G 1 of the main different refractive index region 1221.
  • the region 1222 is translated, 80% or more of the secondary different refractive index regions 1222 have a shape overlapping the main different refractive index region 1221. Therefore, the primary different refractive index region 1221 and the secondary different refractive index have the same shape. Either one of the regions 1222 does not protrude greatly to the other side. Therefore, it becomes difficult to connect the main different refractive index region 1221 and the sub different refractive index region 1222 at the time of manufacturing.
  • the right angle 1222A of the sub-different refractive index regions 1222 is closest to the opposite side 1221B which is the longest side of the right triangle in the planar shape of the main different refractive index region 1221.
  • the refractive index region 1221 and the sub-different refractive index region 1222 are not easily connected.
  • the two are easily connected. The configuration of is useful.
  • the planar shape of the main different refractive index region 1221 and the sub different refractive index region 1222 is more beneficial because it needs to be larger.
  • the result of calculating the characteristic values in a plurality of examples having different filling factors for the two-dimensional photonic crystal surface emitting laser 10 (or 10A) of the present embodiment will be shown.
  • the calculation was performed in a plurality of examples in which the filling factor f of the different refractive index region pair 122 was fixed to 0.16 and the filling factor f 2 of the sub-different refractive index region 1222 was different.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 have the same depth, and both are perpendicular to the base material 121 from the spacer layer 13 side to a depth of 116 nm.
  • the depth of the second cladding layer 142 side was 119 nm, and the planar shape was reduced toward the second cladding layer 142.
  • the area of the planar shape at the end portion on the second cladding layer 142 side differs depending on the filling factor, but the main different refractive index region 1221 and the sub-different refractive index region with respect to the planar shape area at the end portion on the spacer layer 13 side. 12 was 1-2%.
  • the distance between the centers of gravity of the main different refractive index region 1221 and the sub different refractive index region 1222 was 0.25 ⁇ 2 1/2 a (0.25 a in the x direction and 0.25 a in the y direction).
  • the calculated value of the radiation coefficient ⁇ v obtained in this example is shown in the graph of FIG.
  • the emission coefficient ⁇ v has a value proportional to the intensity of the laser beam that can be emitted to the outside of the two-dimensional photonic crystal surface emitting laser.
  • the current density to be injected into the active layer 11 needs to be increased as the radiation coefficient ⁇ v increases, it is necessary to design the element in consideration of two factors, the intensity of the laser beam and the current density. .
  • the filling factor f 2 of the sub-different refractive index region 1222 is 0.04 or less, a high value of the radiation coefficient ⁇ v of 35 cm ⁇ 1 or more was obtained.
  • the coupling coefficient ⁇ 3 is a value indicating the easiness of occurrence of high-order mode laser oscillation. The smaller this value is, the higher the order mode is suppressed and the so-called single mode oscillation consisting only of the fundamental mode is obtained. .
  • the coupling factor ⁇ 3 decreases as the filling factor f 2 of the sub-different refractive index region 1222 increases, and the higher-order mode oscillation is suppressed.
  • the values of these coupling coefficients ⁇ 3 are all lower than 1500 cm ⁇ 1 when a different refractive index region composed of one right triangle is used.
  • a filling factor that is an upper limit value of the range may be employed.
  • the main different refractive index region 1221 and the sub different refractive index are obtained by using the main different refractive index region 1221 and the sub different refractive index region 1222 having the same three-dimensional shape as in the case where the filling factor f 2 in the above calculation example is 0.04.
  • the radiation coefficient ⁇ v (FIG. 8) and the coupling coefficient ⁇ 3 (FIG. 9) were calculated for a plurality of examples in which the distance d between the centers of gravity of the region 1222 is different.
  • the values indicated by broken lines in FIGS. 8 and 9 are values when a different refractive index region composed of one right triangle is used (values surrounded by broken circles in FIGS. 6 and 7).
  • the radiation coefficient ⁇ v is larger than that in the case of using a different refractive index region composed of one right triangle within a range of (d / (2 1/2 a)) of 0.25 to 0.4.
  • the coupling coefficient ⁇ 3 is smaller than that in the case of using a different refractive index region composed of one right triangle within the range of (d / (2 1/2 a)) of 0.25 to 0.33.
  • the radiation coefficient alpha v in the graph of FIG. 6 is below 35 cm -1, in the range of the filling factor f 2 sub modified refractive index region 1222 is 0.05-0.07, filling factor f of the modified refractive index area pairs 122 was changed from 0.16 to 0.157.
  • a plurality of different calculations were performed for the distance d between the centers of gravity of the main different refractive index region 1221 and the sub different refractive index region 1222 within the range of (d / (2 1/2 a)) of 0.25 to 0.29. The calculation results are shown in FIG.
  • the light output was calculated. The result is shown in FIG.
  • This output value is compared with the experimental value obtained with the two-dimensional photonic crystal surface emitting laser described in Non-Patent Documents 1 and 2 (although there is a difference between the calculated value and the experimental value). It is a high value of more than double.
  • the thickness on the side of the second cladding layer 142 having a tapered shape is set to the same 119 nm in the main different refractive index region 1221 and the sub different refractive index region 1222, and The thickness on the side of the spacer layer 13 that is perpendicular is 116 nm in the main different refractive index region 1221 and (116 ⁇ h 2u ) nm in the sub different refractive index region 1222.
  • the main different refractive index region 1221 reaches the boundary with the spacer layer 13, and the sub different refractive index region 1222 is h 2 ⁇ m away from the boundary between the spacer layer 13 and the base material 121.
  • the spacer layer 13 is sufficiently thinner than the main different refractive index region 1221 and the sub different refractive index region 1222. Therefore, the distance h 2u can be regarded as the distance between the sub-different refractive index region 1222 and the active layer 11.
  • FIG. 13 shows the calculation result of the radiation coefficient ⁇ v
  • FIG. 14 shows the calculation result of the coupling coefficient ⁇ 3 .
  • the larger the value of h 2u that is, the greater the difference in thickness between the main different refractive index region 1221 and the sub different refractive index region 1222, the larger the radiation coefficient ⁇ v and the larger the coupling coefficient ⁇ 3 . Therefore, a larger value of h 2u is desirable for increasing the output of the laser beam, and a smaller value is desirable in terms of laser oscillation in a single mode.
  • the coupling coefficient ⁇ 3 is desirably 600 cm ⁇ 1 or less, and for this purpose, the distance h 2u is desirably 20 nm or less.
  • the coupling coefficient according to the distance h 2u shown in this calculation is hardly affected by the thickness of the main different refractive index region 1221 and the sub different refractive index region 1222 or the size of the planar shape.
  • the thickness on the spacer layer 13 side perpendicular to the base material 121 is the same 116 nm in the main different refractive index region 1221 and the sub different refractive index region 1222, and the second cladding having a tapered shape is formed.
  • the same calculation was performed for an example in which the thickness on the layer 142 side was 119 nm in the main different refractive index region 1221 and (119 ⁇ h 2d ) nm in the sub different refractive index region 1222.
  • FIG. 15 shows the calculation result of the radiation coefficient ⁇ v
  • FIG. 16 shows the calculation result of the coupling coefficient ⁇ 3 .
  • the radiation coefficient ⁇ v and the coupling coefficient ⁇ 3 increase, but these values are smaller than those in FIGS. 13 and 14. .
  • FIG. 17 shows various examples where the planar shapes of the main different refractive index region and the sub different refractive index region are both triangular.
  • the opposite side of the maximum angle of the sub-different refractive index region 1222 is disposed adjacent to the maximum angle of the main different refractive index region 1221.
  • the main modified refractive index region 1221 and the shape and size of the sub-modified refractive index region 1222 is the same as in Example Therefore, the center of gravity G 1 of the center of gravity G 2 sub-modified refractive index area 1222 main modified refractive index area 1221
  • the secondary different refractive index region 1222 overlaps the main different refractive index region 1221 by 100%.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 are both triangles other than a right-angled isosceles triangle, and both are similar.
  • planar shapes of the main different refractive index region 1221 and the sub different refractive index region 1222 in each example are a right-angled isosceles triangle in (b), an obtuse triangle in (c), an acute triangle in (d), and a maximum angle. Greater than 60 °. In both cases, the main different refractive index region 1221 and the sub different refractive index region 1222 are similar in shape, and the sub different refractive index region 1222 has a smaller planar shape than the main different refractive index region 1221.
  • the sub-different refractive index region 1222 When the sub-different refractive index region 1222 is virtually moved so that the center of gravity G 2 of the region 1222 overlaps the center of gravity G 1 of the main different refractive index region 1221, the sub different refractive index region 1222 is 100%, and the main different refractive index region 1221 overlaps.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 are dissimilar.
  • the main different refractive index region 1221 and the sub different refractive index region 1222 are both a right-angled isosceles triangle in (e), and the latter is an obtuse triangle in (f).
  • the sub-different refractive index region 1222 is virtually moved so that the center of gravity G 2 of the sub-different refractive index region 1222 overlaps the center of gravity G 1 of the main different refractive index region 1221.
  • a part of the sub-refractive index region 1222 protrudes from the main different-refractive index region 1221, but 80% or more of the sub-different refractive index region 1222 is in the main different refractive index region 1221.
  • FIG. 18 shows an example in which the planar shape of the main different refractive index region and / or the sub different refractive index region is other than a triangle and is a non-similar shape.
  • the main different refractive index region 1221 is a right isosceles triangle, while the sub different refractive index region 1222 is a square.
  • the main different refractive index region 1221 is a square and the sub different refractive index region 1222 is a parallelogram.
  • the main different refractive index region 1221 is circular and the sub different refractive index region 1222 is square.
  • the main different refractive index region 1221 is a regular hexagon and the secondary different refractive index region 1222 is a square.
  • the sub-different refractive index region 1222 when the sub-different refractive index region 1222 is virtually moved so that the center of gravity G 2 of the sub-different refractive index region 1222 overlaps the center of gravity G 1 of the main different refractive index region 1221, Although part of the region 1222 (broken line portion in the drawing) protrudes from the main different refractive index region 1221, 80% or more of the sub different refractive index region 1222 is in the main different refractive index region 1221.
  • planar shape of the main different refractive index region and / or the sub different refractive index region is other than a triangle and is not similar is not limited to that shown in FIG.
  • the planar shape of the main different refractive index region or the sub different refractive index region may be a rectangle, a rhombus, or another general rectangle, or may be a polygon or an ellipse other than a triangle and a rectangle.
  • the main different refractive index region and / or the sub different refractive index region may have a planar shape other than a circle or an ellipse surrounded by a curve other than a straight line.
  • the sub-different refractive index region 1222 when the sub-different refractive index region 1222 is virtually moved so that the center of gravity G 2 of the sub-different refractive index region 1222 overlaps the center of gravity G 1 of the main different refractive index region 1221, 80% or more of the refractive index region 1222 is present in the main different refractive index region 1221.
  • the present invention is not limited to the above embodiments.
  • the filling factor f of the pair of different refractive index regions is not limited to that of the above embodiment, but is preferably in the range of 0.1 to 0.3.
  • Filling factor f 2 sub modified refractive index region is also not limited to the above embodiment, it the ratio f 2 / f of the filling factor f of the modified refractive index area pairs is less than 0.5 A 0.1 or more desirable.
  • both the main different refractive index region 1221 and the sub different refractive index region 1222 have a tapered three-dimensional shape, but have an inner wall perpendicular to the base material over the entire thickness direction. You may use the main different refractive index area
  • region which have a shape symmetrical about the thickness direction of a base material.
  • the main different refractive index region and the sub different refractive index region having a shape symmetric with respect to the thickness direction of the base material are made of a solid material different from the base material and can be manufactured by the following method (see FIG. 19). ).
  • a base material 121 is formed thereon by a conventional method such as MOCVD (a).
  • a raw material solution film 28 made of a solution in which silanol is dissolved in methanol is formed on the surface of the base material 121 by spin coating, and the solution is allowed to enter the hole pair 223 (c). Thereafter, the raw material solution film 28 is removed from the surface of the base material 121 while leaving the solution in the hole pair 223 (d). Furthermore, after evaporating methanol from the solution in the hole pair 223 by heating to 220 ° C., the solid is made of glassy SiO 2 in the hole pair 223 by heating to 420 ° C. ( e).
  • This solid constitutes a pair of different refractive index regions 222 including a main different refractive index region 2221 and a sub different refractive index region 2222 of the two-dimensional photonic crystal layer 22.
  • the spacer layer 13, the active layer 11, and the first cladding layer 141 are formed on the two-dimensional photonic crystal layer 22, and the first electrode 15 is formed on the surface of the first cladding layer 141.
  • Second electrodes 16 are respectively formed on the surface. Since the components other than the two-dimensional photonic crystal layer 22 can be manufactured by the same method as in the prior art, detailed description is omitted.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Engineering & Computer Science (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

L'invention fournit un laser à émission par la surface à cristaux photoniques bidimensionnels qui est adapté à la fabrication, et qui possède une paire de régions à indices de réfraction différents permettant d'obtenir une sortie optique élevée. Ce laser à émission par la surface à cristaux photoniques bidimensionnels (10) possède : des cristaux photoniques bidimensionnels dans lesquels la paire de régions à indices de réfraction différents (122) constituée d'une région à indice de réfraction différent principale (1221) dont l'indice de réfraction est différent de celui d'un matériau de base (121) en forme de plaque, et d'une région à indice de réfraction différent secondaire (1222) possédant une forme plane de plus petite surface que celle de la région à indice de réfraction différent principale (1221), est disposée sur un nœud d'un réseau orthogonale de longueur de période (a) ; et d'une couche active (11) agencée d'un côté du matériau de base (121). La distance entre le centre de gravité (G1) de la région à indice de réfraction différent principale (1221) et le centre de gravité (G2) de la région à indice de réfraction différent secondaire (1222), est comprise entre 0,25a et 0,28a. Lorsque la région à indice de réfraction différent secondaire (1222) est déplacée parallèlement de sorte que le centre de gravité (G2) de la région à indice de réfraction différent secondaire (1222) se superpose au centre de gravité (G1) de la région à indice de réfraction différent principale (1221), au moins 80% de la région possède une forme telle qu'elle se superpose à la région à indice de réfraction différent principale (1221). Cette région à indice de réfraction différent principale (1221) possède une forme plane triangulaire telle que son plus grand angle est supérieur à 60°,
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US10714897B2 (en) 2016-03-15 2020-07-14 Kabushiki Kaisha Toshiba Distributed feedback semiconductor laser
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US11646546B2 (en) 2017-03-27 2023-05-09 Hamamatsu Photonics K.K. Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
US11637409B2 (en) * 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
US20190312410A1 (en) * 2017-03-27 2019-10-10 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
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CN111448726A (zh) * 2017-12-08 2020-07-24 浜松光子学株式会社 发光装置及其制造方法
CN111448726B (zh) * 2017-12-08 2023-04-04 浜松光子学株式会社 发光装置及其制造方法
US11626709B2 (en) 2017-12-08 2023-04-11 Hamamatsu Photonics K.K. Light-emitting device and production method for same
US11258233B2 (en) 2017-12-27 2022-02-22 Kabushiki Kaisha Toshiba Quantum cascade laser
US20220037848A1 (en) * 2018-11-30 2022-02-03 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component having a refractive index modulation layer and method for producing the optoelectronic semiconductor component
CN114287089A (zh) * 2019-08-30 2022-04-05 国立大学法人京都大学 二维光子晶体面发光激光器
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