WO2016017773A1 - Substrat conducteur pour écran tactile et procédé de fabrication d'un substrat conducteur pour écran tactile - Google Patents

Substrat conducteur pour écran tactile et procédé de fabrication d'un substrat conducteur pour écran tactile Download PDF

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Publication number
WO2016017773A1
WO2016017773A1 PCT/JP2015/071690 JP2015071690W WO2016017773A1 WO 2016017773 A1 WO2016017773 A1 WO 2016017773A1 JP 2015071690 W JP2015071690 W JP 2015071690W WO 2016017773 A1 WO2016017773 A1 WO 2016017773A1
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Prior art keywords
copper plating
layer
copper
plating film
touch panel
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PCT/JP2015/071690
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English (en)
Japanese (ja)
Inventor
永田　純一
Original Assignee
住友金属鉱山株式会社
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Application filed by 住友金属鉱山株式会社 filed Critical 住友金属鉱山株式会社
Priority to CN201580040634.2A priority Critical patent/CN106575172B/zh
Priority to KR1020177002679A priority patent/KR102344716B1/ko
Priority to JP2016538446A priority patent/JP6497391B2/ja
Publication of WO2016017773A1 publication Critical patent/WO2016017773A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/305—Polyamides or polyesteramides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a conductive substrate for a touch panel and a method for manufacturing a conductive substrate for a touch panel.
  • the capacitive touch panel converts information on the position of an adjacent object on the panel surface into an electrical signal by detecting a change in capacitance caused by the object adjacent to the panel surface. Since the conductive substrate for a touch panel used for a capacitive touch panel is installed on the surface of a display, the material of the conductive layer used for the conductive substrate for the touch panel is required to have low reflectance and be difficult to be visually recognized. .
  • Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium tin oxide) film is formed as a transparent conductive film on a polymer film.
  • Patent Documents 2 and 3 Patent Documents 2 and 3
  • the metal foil such as copper is used as the conductive layer included in the conductive substrate for the touch panel, the metal foil has a metallic luster, so that the visibility of the display is reduced due to reflection on the surface of the metal foil. There was a problem.
  • an object of one aspect of the present invention is to provide a conductive substrate for a touch panel that includes a conductive layer using a metal and suppresses reflection of light by the conductive layer.
  • An insulator substrate An underlying metal layer disposed on at least one surface of the insulator substrate and containing nickel; A copper thin film layer disposed on the base metal layer; A copper plating film disposed on the copper thin film layer and having one surface facing the copper thin film layer and another surface located on the opposite side of the one surface; In the range of depth from the surface of the other surface of the copper plating film to 0.3 ⁇ m, the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less, Provided is a conductive substrate for a touch panel, wherein the other surface of the copper plating film has a surface roughness (Ra) of 0.01 ⁇ m or more and 0.15 ⁇ m or less.
  • Ra surface roughness
  • a conductive substrate for a touch panel that includes a conductive layer using a metal and suppresses reflection of light by the conductive layer.
  • Sectional drawing of the conductive substrate for touchscreens concerning embodiment of this invention Sectional drawing of the conductive substrate for touchscreens concerning embodiment of this invention.
  • Sectional drawing of the conductive substrate for touchscreens concerning embodiment of this invention The structure explanatory view of the conductive substrate for touch panels patterned according to the embodiment of the present invention.
  • 2B is a cross-sectional view taken along the plane AA ′ of FIG. BRIEF DESCRIPTION OF THE DRAWINGS Structure explanatory drawing of the laminated conductive substrate for touchscreens provided with the mesh-shaped wiring which concerns on embodiment of this invention.
  • FIG. 3B is a cross-sectional view taken along the line BB ′ in FIG. 3A.
  • Sectional drawing of the conductive substrate for touchscreens provided with the mesh-shaped wiring which concerns on embodiment of this invention.
  • Explanatory drawing of the roll-to-roll sputtering apparatus which concerns on embodiment of this invention.
  • the conductive substrate for touch panel of this embodiment can have an insulator base material, a base metal layer, a copper thin film layer, and a copper plating film.
  • the base metal layer is disposed on at least one surface of the insulator base material and can contain nickel.
  • the copper thin film layer can be disposed on the underlying metal layer.
  • a copper plating film can be arrange
  • the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less
  • the surface roughness (Ra) of the other surface of the copper plating film is The thickness can be 0.01 ⁇ m or more and 0.15 ⁇ m or less.
  • the conductive substrate for touch panels of this embodiment is a base metal layer, a copper thin film layer, and a copper plating film on the surface of an insulator base material before patterning a base metal layer, a copper thin film layer, and a copper plating film. It may be a substrate having Further, the conductive substrate for a touch panel of the present embodiment may be a substrate obtained by patterning a base metal layer, a copper thin film layer, and a copper plating film, that is, a wiring substrate.
  • the conductive substrate for touch panel after patterning the base metal layer, the copper thin film layer, and the copper plating film is a region where the insulator base material is not covered by the base metal layer or the like, that is, a region where the insulator base material is exposed. Will be included.
  • the insulator base material is not particularly limited, and any material such as a glass substrate and various resin substrates can be used.
  • the insulator base material is preferably a resin substrate.
  • the resin substrate is preferably a resin film.
  • the insulator base material preferably has a high light transmittance.
  • the total light transmittance of an insulator base material is 30% or more, It is more preferable that it is 60% or more, It is further more preferable that it is 90% or more.
  • the total light transmittance of the insulator base material here means the total light transmittance of the insulator base material alone.
  • the total light transmittance of the insulating base material can be evaluated based on, for example, JIS K7361-1 (2011).
  • the shape of the insulator base material is not particularly limited, but preferably has a plate shape, for example.
  • the insulator base material can have one main plane and the other main plane opposite to the one main plane.
  • the main plane means the widest plane portion of the insulator base material.
  • the thickness of the insulator base material is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, and the like required when a conductive substrate for a touch panel is used.
  • the insulator base material is preferably a film, that is, an insulator film.
  • a thickness of an insulator base material it can be referred to as 10 micrometers or more and 200 micrometers or less, for example.
  • the thickness of the insulator base material is preferably 20 ⁇ m or more and 120 ⁇ m or less, and more preferably 20 ⁇ m or more and 100 ⁇ m or less.
  • the thickness of the transparent substrate is preferably 20 ⁇ m or more and 50 ⁇ m or less.
  • the adhesion between the insulator substrate and the copper layer can be increased, Or it can suppress more reliably that a copper layer peels from an insulator base material at the time of use.
  • the copper layer can have copper as a main component and has a metallic luster
  • the light incident from the insulator base material side is the copper layer. May be reflected by the surface of the surface.
  • positioned the copper layer directly on the insulator base material is arrange
  • the visibility of a display may fall.
  • the base metal layer is arranged between the insulator base material and the copper layer, reflection of light by the copper layer can be suppressed by the base metal layer, and even when arranged on the display, It can suppress that the visibility of a display falls.
  • the base metal layer can be formed on at least one main plane of the insulator base material. Moreover, it can also form on both main planes of one main plane of an insulator base material, and the other main plane so that it may mention later.
  • the material constituting the base metal layer is not particularly limited.
  • the adhesion between the insulator base and the copper layer, the degree of suppression of light reflection on the surface of the copper layer, and the conductive substrate for touch panel It can be arbitrarily selected according to the degree of stability to the environment (for example, humidity and temperature) to be used.
  • a material containing Ni can be preferably used from the viewpoint of enhancing the adhesion between the insulator base and the copper layer and suppressing the reflection of light on the surface of the copper layer.
  • a material containing Ni for example, it is preferable to contain Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn.
  • the base metal layer can further include one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • the base metal layer includes a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. You can also also in this case, the base metal layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, a Ni alloy is, for example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, Ni-Cu-Cr alloy can be preferably used.
  • the base metal layer can be formed on at least one main plane of the insulator base material, but does not reduce the light transmittance of the conductive substrate for the touch panel. It is preferable not to arrange an adhesive between the two. That is, the base metal layer is preferably formed directly on the upper surface of the insulator base material without using an adhesive.
  • the film formation method of the base metal layer is not particularly limited, but it is preferable to form the film by a dry plating method.
  • a dry plating method for example, a sputtering method, a vapor deposition method, an ion plate method, or the like can be preferably used.
  • the base metal layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen
  • 1 is selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the base metal layer.
  • a gas containing an element of at least a seed it can be added to the base metal layer.
  • carbon monoxide gas and / or carbon dioxide gas is used.
  • oxygen oxygen gas is used.
  • hydrogen hydrogen gas and / or water is used.
  • nitrogen nitrogen gas can be added to the atmosphere when dry plating is performed.
  • a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating.
  • an inert gas For example, argon can be used preferably.
  • the adhesion between the insulating base material and the base metal layer can be particularly enhanced.
  • a base metal layer can contain a metal as a main component, for example, its adhesiveness with a copper layer is also high. For this reason, especially the peeling of the copper layer from an insulator base material can be suppressed by arrange
  • the thickness of the base metal layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.
  • the underlying metal layer has a function of suppressing light reflection on the copper layer, but when the underlying metal layer is thin, reflection of light by the copper layer may not be sufficiently suppressed. Therefore, in order to more reliably suppress reflection on the copper layer, it is preferable that the thickness of the base metal layer be 3 nm or more as described above.
  • the upper limit of the thickness of the underlying metal layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming the wiring are increased, resulting in an increase in cost. Will be invited. Therefore, the thickness of the base metal layer is preferably 50 nm or less as described above, more preferably 35 nm or less, and even more preferably 33 nm or less.
  • the copper thin film layer can be formed on the base metal layer, it is preferable not to place an adhesive between the base metal layer and the copper thin film layer in order not to reduce the light transmittance of the conductive substrate for the touch panel. . That is, the copper thin film layer is preferably formed directly on the upper surface of the base metal layer without using an adhesive.
  • the method for forming the copper thin film layer is not particularly limited, but it is preferable to form the film by, for example, a dry plating method.
  • a dry plating method for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.
  • the copper thin film layer is formed by a dry plating method, it can be formed directly on the base metal layer without using an adhesive.
  • the thickness of the copper thin film layer is not particularly limited, but it also functions as a power feeding layer when forming a copper plating film, and is preferably 10 nm or more, and more preferably 50 nm or more.
  • the upper limit of the thickness of the copper thin film layer is not particularly limited, the copper thin film layer is formed by, for example, a dry plating method as described above, and is preferably 300 nm or less from the viewpoint of productivity, and is 200 nm or less. More preferably.
  • the copper plating film can be formed on the copper thin film layer.
  • the copper plating film is preferably formed directly on the upper surface of the copper thin film layer without using an adhesive.
  • the method for forming the copper plating film is not particularly limited, but it is preferable to form the film by, for example, a wet plating method.
  • a wet plating method an electroplating method is preferably used.
  • the copper plating film can have one surface facing the copper thin film layer and another surface located on the opposite side of the one surface.
  • the concentration of sulfur can be made 10 mass ppm or more and 150 mass ppm or less in a depth range from the surface of the other surface of the copper plating film to 0.3 ⁇ m.
  • the surface roughness (Ra) of the other surface of the copper plating film can be 0.01 ⁇ m or more and 0.15 ⁇ m or less.
  • the other surface of the copper plating film can be located on the outer surface side of the conductive substrate for a touch panel of the present embodiment, for example, as shown in FIG.
  • the main component of a copper plating film is copper, when it is set as the electroconductive board
  • the influence on the visibility can be suppressed by removing the gloss of the other surface of the copper plating film.
  • the surface roughness of the other surface of the copper plating film is more preferably 0.05 ⁇ m or more.
  • the upper limit of the surface roughness of the other surface of the copper plating film is not particularly limited, but if it becomes too large, for example, when the copper plating film or the like is etched, the adhesion between the mask and the copper plating film May become difficult to pattern into a desired shape.
  • the surface roughness of the other surface of the copper plating film is preferably 0.15 ⁇ m or less, and more preferably 0.1 ⁇ m or less.
  • the surface roughness (Ra) here is defined in JIS B 0601, and can be evaluated by, for example, a stylus method or an optical method.
  • a method of etching the other surface of the copper plating film As a method of setting the surface roughness of the other surface of the copper plating film to the above range, a method of etching the other surface of the copper plating film can be mentioned. And before the etching treatment, when the concentration of sulfur in the depth range from the other surface of the copper plating film to 0.3 ⁇ m is 10 mass ppm or more, by etching the other surface of the copper plating film, The surface roughness (Ra) of the other surface of the copper plating film can be in the above range.
  • the concentration of sulfur in the depth range of up to 0.3 ⁇ m on the other surface of the copper plating film exceeds 150 mass ppm, the copper plating film may become brittle, and the copper plating film may collapse, This is not preferable because it may be peeled off from the conductive substrate.
  • concentration of sulfur in the range of the depth to 0.3 micrometer from the other surface of a copper plating film is 10 mass ppm or more and 150 mass ppm or less.
  • the concentration of sulfur in the depth range from the other surface of the copper plating film to 0.3 ⁇ m is more preferably 50 mass ppm or more and 100 mass ppm or less.
  • the sulfur concentration in the depth range of 0.3 ⁇ m from the highest portion of the surface of the other surface of the copper plating film, that is, the portion remaining as a convex portion even after the etching treatment is within the above range. Is preferably satisfied.
  • the sulfur concentration of the portion exceeding 0.3 ⁇ m from the other surface of the copper plating film is not particularly limited, and for example, the sulfur concentration may be in the above range over the entire copper plating film.
  • the conditions of the electroplating treatment when forming the copper plating film are not particularly limited, and various conditions according to ordinary methods may be adopted.
  • the copper plating film containing sulfur can be formed using, for example, a copper plating solution containing sulfur.
  • a copper plating solution containing sulfur for example, a copper plating solution added with an organic compound containing a sulfur atom is used. Can be used.
  • the depth can be reduced to 0.3 ⁇ m from other surfaces.
  • a copper plating film having the sulfur concentration can be formed.
  • the conveyance speed here means the speed at which an object to be plated (base material) in which the base metal layer and the copper thin film layer are formed on the surface of the insulator base material is supplied to and conveyed to the plating tank.
  • the content of the organic compound containing a sulfur atom in the copper plating solution used when forming the copper plating film is not particularly limited, but is preferably, for example, 2 mass ppm or more and 25 mass ppm or less, More preferably, it is 5 mass ppm or more and 15 mass ppm or less. This is because the content of the organic compound containing sulfur atoms in the copper plating solution is 2 mass ppm or more and 25 mass ppm or less, so that the sulfur concentration in the range from the other surface of the copper plating film to a depth of 0.3 ⁇ m. It is because it becomes especially easy to make the above range.
  • organic compound containing a sulfur atom is not particularly limited, and examples thereof include 3- (benzothiazolyl-2-thio) propylsulfonic acid and its sodium salt, 3-mercaptopropane-1-sulfonic acid and Its sodium salt, ethylenedithiodipropylsulfonic acid and its sodium salt, bis (p-sulfophenyl) disulfide and its disodium salt, bis (4-sulfobutyl) disulfide and its disodium salt, bis (3-sulfo-2- Hydroxypropyl) disulfide and its disodium salt, bis (3-sulfopropyl) disulfide and its disodium salt, bis (2-sulfopropyl) disulfide and its disodium salt, methyl- (w-sulfopropyl) sulfide and its Disodium salt, meth -(W-sulfopropyl) -trisulfide and
  • the other surface of the copper plating film can be brought into the above range by etching the other surface of the copper plating film.
  • the method of etching the other surface of the copper plating film is not particularly limited, for example, it can be performed by using an etching solution.
  • the etching solution to be used is not particularly limited, and a soft etching solution for copper can be preferably used.
  • the film thickness of the copper layer composed of the copper thin film layer and the copper plating film formed on the base metal layer is not particularly limited, and the electrical resistance value required for the conductive substrate for touch panel and patterning are not limited. It can be arbitrarily selected according to the wiring width after the process.
  • the film thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 ⁇ m or more and 4.1 ⁇ m or less. Further, the thickness of the copper layer is more preferably 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the electrical resistance value of the conductive substrate for touch panel can be made sufficiently low by setting the film thickness of the copper layer to 0.5 ⁇ m or more, and when the copper layer is patterned, the wiring pattern is a desired wiring. This is because it is possible to suppress narrowing than the width or disconnection. And by making the film thickness of a copper layer into 4.1 micrometers or less, the area of a copper layer side part becomes small and reflection of the light by a copper layer side part can be suppressed. Furthermore, side etching can be suppressed when the copper layer is etched to form a wiring pattern.
  • an arbitrary layer can be further provided.
  • a blackening layer can be further provided on the copper plating film.
  • the surface roughness of the other surface of the copper plating film within the above range, specular reflection on the surface of the copper plating film is suppressed, and the gloss on the other surface of the copper plating film is erased to suppress the effect on visibility.
  • the influence which it has on the visibility of a copper plating film can be further suppressed by providing a blackening layer.
  • the blackened layer preferably contains nickel. That is, as the material constituting the blackened layer, a material containing Ni (nickel) can be preferably used. As a material containing Ni, for example, it is preferable to include Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. . Further, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • the material constituting the blackening layer includes Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Metal alloys can also be included. Also in this case, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, a Ni alloy is, for example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, Ni-Cu-Cr alloy can be preferably used.
  • the base metal layer and the blackened layer may be the same material or different materials.
  • the underlying metal layer, the copper layer, and the blackened layer can be patterned by etching as described later, the reactivity to the etching solution is the same for the underlying metal layer, the copper layer, and the blackened layer. It is preferable that the same is more preferable. For this reason, it is particularly preferable that the base metal layer and the blackening layer are made of the same material.
  • the method for forming the blackened layer is not particularly limited, and may be formed by a dry plating method as in the case of the base metal layer, or may be formed by a wet plating method.
  • the thickness of the blackening layer is not particularly limited, and can be arbitrarily selected according to the degree of reflectance (regular reflectance) required for the conductive substrate for touch panel.
  • the conductive substrate of the present embodiment includes an insulator base material, a base metal layer, a copper thin film layer, and a copper plating film, and the base metal layer and the copper thin film layer are provided on the insulator base material.
  • the copper plating film may be laminated in that order.
  • 1A and 1B show examples of cross-sectional views of the conductive substrate of the present embodiment on a plane parallel to the stacking direction of the insulator base material, the base metal layer, the copper thin film layer, and the copper plating film.
  • the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are further provided on the first main plane 11a side of the insulator base material 11. It can be set as the structure laminated
  • the copper plating film 14 has one surface 14a facing the copper thin film layer 13, and another surface 14b located on the opposite side of the one surface 14a.
  • the base metal layers 121 and 122 are respectively formed on the first main plane 11a side and the second main plane 11b side of the insulating base material 11.
  • the copper thin film layers 131 and 132 and the copper plating films 141 and 142 can be stacked one by one in that order.
  • the copper plating film 141 (142) is one surface 141a (142a) facing the copper thin film layer 131 (132) and the other surface located on the opposite side of the one surface 141a (142a).
  • 141b (142b) is one surface 141a (142a) facing the copper thin film layer 131 (132) and the other surface located on the opposite side of the one surface 141a (142a).
  • a blackening layer (not shown) can be provided as described above.
  • a blackening layer in the conductive substrate for touch panels of FIG. 1A, it can arrange
  • a blackened layer can be disposed on the other surface 141 b of the copper plating film 141 and / or on the other surface 142 b of the copper plating film 142.
  • the base metal layer 12 (121, 122) is disposed between the insulator base 11 and the copper thin film layer 13 (131, 132), whereby an insulator base is provided. Reflection of light incident from the material 11 side toward the copper thin film layer 13 (131, 132) can be suppressed.
  • the regular reflectance of the base metal layer 12 (121, 122) through the insulator base material 11 is not particularly limited.
  • the average regular reflectance in a wavelength range of 400 nm to 700 nm is 30. % Or less, and more preferably 25% or less.
  • the average specular reflectance of light having a wavelength of 400 nm or more and 700 nm or less through the insulator base 11 of the base metal layer 12 (121, 122) is 30% or less, for example, when used as a conductive substrate for a touch panel, Reflection of light from the display and light from the display can be sufficiently suppressed. For this reason, it is preferable because the visibility of the display is hardly lowered.
  • the measurement of the reflectance can be performed by irradiating the base metal layer 12 (121, 122) with light from the insulator base material 11 side.
  • the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the first main plane 11 a side of the insulator base 11 as shown in FIG. Can be measured by irradiating light from the second main plane 11b side of the insulator base material 11 so as to irradiate.
  • light having a wavelength of 400 nm or more and 700 nm or less is changed, for example, at an interval of 1 nm wavelength and irradiated to the base metal layer 12 (121, 122) through the insulating substrate 11, and an average value of the measured values is calculated.
  • the average regular reflectance of light in the wavelength range of 400 nm or more and 700 nm or less through the insulator base 11 of the base metal layer 12 (121, 122) can be obtained.
  • the regular reflectance in the surface of the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142) is not particularly limited, and the conductive film for touch panel is not limited. It can be arbitrarily selected according to the performance required for the conductive substrate.
  • the average regular reflectance of the other surface 14b (141b, 142b) surface of the copper plating film 14 (141, 142) in the wavelength range of 400 nm to 700 nm is preferably 30% or less, for example, 20% The following is more preferable.
  • the measurement of the reflectance can be performed by irradiating light to the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142).
  • the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the first main plane 11 a side of the insulator base 11 as shown in FIG.
  • the surface 14b can be irradiated with light and measured.
  • Measurement can be performed by irradiating the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142) by changing the light in the wavelength range of 400 nm to 700 nm, for example, at intervals of 1 nm. And let the average value of the value measured in this case be the average regular reflectance of the light of wavelength 400nm or more and 700nm or less in the other surface 14b (141b, 142b) surface of this copper plating film 14 (141, 142). it can.
  • a blackening layer can be formed on the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142).
  • the regular reflectance on the surface of the blackened layer is not particularly limited.
  • the average regular reflectance in the wavelength range of 400 nm to 700 nm is preferably 30% or less, and preferably 20% or less. More preferred.
  • the regular reflectance of light with a wavelength of 400 nm or more and 700 nm or less of the blackened layer is 30% or less, for example, when used as a conductive substrate for a touch panel, reflection of light from the outside and light from the display is sufficiently suppressed. it can. For this reason, it is preferable because the visibility of the display is hardly lowered.
  • the regular reflectance of the blackened layer can be measured by irradiating the blackened layer with light.
  • the surface of the blackening layer facing the copper plating film 14 can measure by irradiating the opposite surface with light.
  • light with a wavelength of 400 nm to 700 nm is irradiated to the blackened layer, for example, by changing the wavelength at 1 nm intervals, and the average value of the measured values is the light in the wavelength range of 400 nm to 700 nm on the blackened layer surface.
  • the average regular reflectance can be obtained.
  • the regular reflectance of light measured on the surface of the underlying metal layer or the blackened layer is preferably within the above range, and particularly the surface of the underlying metal layer and the blackened layer surface. It is more preferable that the regular reflectance of light satisfies the above range.
  • the conductive substrate for touch panels of this embodiment can be used for a touch panel, for example.
  • the base metal layer, the copper thin film layer, and the copper plating film which are contained in the conductive substrate for touchscreens of this embodiment are patterned.
  • the base metal layer, the copper thin film layer, and the copper plating film can be patterned in accordance with, for example, a desired wiring pattern, and the base metal layer, the copper thin film layer, and the copper plating film are patterned in the same shape. It is preferable.
  • the blackening layer is also patterned in the same shape as the base metal layer or the like.
  • the touch panel conductive substrate of the present embodiment has been described so far, but a plurality of such touch panel conductive substrates may be stacked to form a touch panel stacked conductive substrate.
  • the base metal layer, the copper thin film layer, and the copper plating film included in the conductive substrate for a touch panel are preferably patterned as described above.
  • the blackening layer is provided, it is preferable that the blackening layer is also patterned.
  • the conductive substrate for touch panel or the laminated conductive substrate for touch panel preferably has mesh wiring.
  • FIG. 2A shows the conductive substrate for touch panel 20 on the upper surface side, that is, the conductive substrate for touch panel of one of the two conductive substrates for touch panel constituting the laminated conductive substrate for touch panel having mesh-like wiring. It is the figure seen from the direction perpendicular
  • FIG. 2B shows a cross-sectional view taken along the line AA ′ of FIG. 2A.
  • the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 on the insulator base material 11 have the same shape. be able to.
  • the patterned copper plating film 24 has a plurality of linear patterns (copper plating film patterns 24A to 24G) shown in FIG. 2A, and the plurality of linear patterns are parallel to the Y axis in the figure. In addition, they can be arranged apart from each other in the X-axis direction in the drawing. At this time, as shown in FIG.
  • the copper plating film patterns are, for example, one side of the insulator base 11 and It can arrange
  • the insulating base layer is between the patterns.
  • the first main plane 11a of the material 11 is exposed.
  • the blackened layer when a blackened layer is disposed on the copper plating film 24, the blackened layer can also be patterned in the same shape as the base metal layer 22 and the like. The main plane 11a is exposed.
  • the pattern forming method of the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 shown in FIGS. 2A and 2B is not particularly limited.
  • a pattern can be formed by arranging and etching a mask having a shape corresponding to the pattern formed on the copper plating film 24.
  • the etching solution to be used is not particularly limited, and can be arbitrarily selected according to the materials constituting the base metal layer, the copper thin film layer, and the copper plating film.
  • the etching solution can be changed for each layer, and the base metal layer, the copper thin film layer, and the copper plating film can be simultaneously etched with the same etching solution. The same applies when a blackening layer is provided.
  • the laminated conductive substrate for touch panels can be formed by laminating the two conductive substrates for touch panel in which the above-mentioned base metal layer and the like are patterned.
  • a laminated conductive substrate for a touch panel will be described with reference to FIGS. 3A and 3B.
  • FIG. 3A shows a view of the laminated conductive substrate for touch panel 30 as viewed from the upper surface side, that is, the upper surface side along the lamination direction of the two conductive substrates for touch panel, and FIG. A cross-sectional view taken along the line -B 'is shown.
  • the touch panel laminated conductive substrate 30 can be obtained by laminating a touch panel conductive substrate 201 and a touch panel conductive substrate 202 as shown in FIG. 3B.
  • the touch-panel conductive substrates 201 and 202 are both patterned base metal layer 221 (222) and copper thin film layer 231 on the first main plane 111a (112a) of the insulator base 111 (112). (232) and a copper plating film 241 (242) may be laminated.
  • the patterned base metal layer 221 (222), the copper thin film layer 231 (232), and the copper plating film 241 (242) of the conductive substrates 201 and 202 for the touch panel are all the conductive substrate 20 for the touch panel described above. As in the case, it can be patterned to have a plurality of linear patterns.
  • the laminated conductive substrate for a touch panel shown in FIG. 3B includes the first main plane 111a of the insulator base 111 of one conductive substrate 201 for touch panel and the insulator base of the conductive substrate 202 for the other touch panel.
  • the material 112 is laminated so as to face the second main plane 112b.
  • the conductive substrate 201 for one touch panel is turned upside down, and the second main plane 111b of the insulator base 111 of the conductive substrate 201 for one touch panel is insulated from the conductive substrate 202 for the other touch panel.
  • the patterned copper plating film 241 of one conductive substrate 201 for touch panel and the conductive substrate 202 for other touch panel are provided.
  • the patterned copper plating film 242 can be laminated so as to intersect with each other.
  • the patterned copper plating film 241 of one conductive substrate 201 for touch panel can be arranged so that the length direction of the pattern is parallel to the X-axis direction in the drawing.
  • the patterned copper plating film 242 of the other conductive substrate 202 for touch panel can be arranged so that the length direction of the pattern is parallel to the Y-axis direction in the drawing.
  • FIG. 3A is a view seen along the stacking direction of the laminated conductive substrate 30 for the touch panel as described above, and therefore, the patterned copper plating disposed on the top of each of the conductive substrates 201 and 202 for the touch panel. Only the coatings 241 and 242 are shown.
  • the patterned base metal layers 221 and 222 and the copper thin film layers 231 and 232 have the same pattern as the patterned copper plating films 241 and 242. ing.
  • the patterned base metal layers 221 and 222 and the copper thin film layers 231 and 232 also have a mesh shape, similar to the patterned copper plating films 241 and 242.
  • the method for adhering the two laminated conductive substrates for the touch panel is not particularly limited, and can be adhered and fixed by, for example, an adhesive.
  • the laminated layer for a touch panel provided with a mesh-like wiring.
  • the conductive substrate 30 can be obtained.
  • 3A and 3B show an example in which a mesh-like wiring (wiring pattern) is formed by combining linear wirings, but the present invention is not limited to such a configuration, and a wiring pattern is configured.
  • the wiring can have any shape.
  • the shape of the wiring constituting the mesh-like wiring pattern can be changed to various shapes such as jagged lines (zigzag straight lines) so that moire (interference fringes) does not occur between the images on the display.
  • the method is not limited to such a form.
  • the base metal layers 121 and 122, the copper thin film layers 131 and 132, and the copper plating films 141 and 142 are stacked on the first main plane 11a and the second main plane 11b of the insulator base 11 shown in FIG. 1B.
  • a conductive substrate provided with mesh-like wiring can also be formed from the conductive substrate for touch panel 10B.
  • the base metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 are arranged in the Y-axis direction in FIG. Patterned into a plurality of linear patterns parallel to the vertical direction. Further, the base metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 have a plurality of linear shapes parallel to the X-axis direction in FIG. 1B. Pattern into patterns. Patterning can be performed, for example, by etching as described above.
  • the base metal layers 421 and 422 are also meshed like the copper thin film layers 431 and 432 and the copper plating films 441 and 442.
  • a blackening layer can be further arranged on the upper surface of the copper plating film. Then, it can be patterned into the same shape as the underlying metal layer.
  • the surface roughness of the other surface of the copper plating film can be in a predetermined range as described above. For this reason, the regular reflection of the light in the copper plating film surface can be suppressed.
  • the base metal layer is disposed between the copper thin film layer and the insulator base material, regular reflection of light incident through the insulator base material on the surface of the copper thin film layer can be suppressed. .
  • the (laminated) conductive substrate for touch panel of this embodiment has a copper layer composed of a copper thin film layer and a copper plating film, and the copper layer can function as a conductive layer.
  • the conductive substrate for touch panels of this embodiment can make an electrical resistance value low by including the conductive layer using a metal. (Manufacturing method of conductive substrate for touch panel, manufacturing method of laminated conductive substrate for touch panel) Next, the manufacturing method of the conductive substrate for touch panels of this embodiment and the structural example of the laminated conductive substrate for touch panels are demonstrated.
  • the manufacturing method of the conductive substrate for touch panels of this embodiment can have the following processes.
  • concentration of sulfur can be 10 mass ppm or more and 150 mass ppm or less in the depth range from the surface of the other surface of a copper plating film to 0.3 micrometer.
  • the surface roughness (Ra) of the other surface of the copper plating film can be set to 0.01 ⁇ m or more and 0.15 ⁇ m or less.
  • the manufacturing method of the conductive substrate for touchscreens of this embodiment and the manufacturing method of the laminated conductive substrate for touchscreens of this embodiment are demonstrated below, except the point demonstrated below, the above-mentioned conductive substrate for touchscreens and laminated conductive materials for touchscreens are demonstrated. Since it can be set as the structure similar to the case of a property board
  • the insulator base material used for the base metal layer forming step can be prepared in advance.
  • the kind of insulator base material to be used is not particularly limited, an arbitrary material such as a glass substrate or various resin substrates can be used as described above. Since materials that can be particularly preferably used have already been described, description thereof will be omitted.
  • the insulator base material can be cut into an arbitrary size in advance if necessary.
  • the base metal layer forming step is a step of forming a base metal layer containing nickel on the insulator base material.
  • the base metal layer can be formed on at least one main plane of the insulating base material 11, for example, the first main plane 11a.
  • base metal layers 121 and 122 can be formed on both the first main plane 11 a and the second main plane 11 b of the insulator base 11.
  • the base metal layer may be formed on both main planes simultaneously.
  • the base metal layer may be formed on the other main plane after the base metal layer is formed on one of the main planes.
  • the material constituting the base metal layer is not particularly limited, and the adhesion between the insulator base and the copper layer (copper thin film layer and copper plating film) and the suppression of light reflection on the surface of the copper layer are suppressed.
  • the degree of stability and the degree of stability with respect to the environment (for example, humidity and temperature) in which the conductive substrate for the touch panel is used can be arbitrarily selected. Since materials that can be suitably used as the material constituting the base metal layer have already been described, description thereof is omitted here.
  • the film formation method for the base metal layer is not particularly limited, and for example, as described above, the film can be formed by a dry plating method.
  • a dry plating method for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.
  • the base metal layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen
  • 1 is selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the base metal layer.
  • a gas containing an element of at least a seed it can be added to the base metal layer.
  • carbon monoxide gas and / or carbon dioxide gas is used.
  • oxygen oxygen gas is used.
  • hydrogen hydrogen gas and / or water is used.
  • nitrogen nitrogen gas can be added to the atmosphere when dry plating is performed.
  • a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating.
  • an inert gas For example, argon can be used preferably.
  • the base metal layer is formed by a sputtering method
  • a target containing a metal species constituting the base metal layer can be used as the target.
  • the target may be formed for each metal species contained in the base metal layer, and the alloy may be formed on the surface of the deposition target such as an insulator base material. It is also possible to use a target obtained by alloying the metal contained in.
  • the underlying metal layer can be suitably formed using, for example, the roll-to-roll sputtering apparatus 50 shown in FIG.
  • the base metal layer forming process will be described taking the case of using the roll-to-roll sputtering apparatus 50 as an example.
  • FIG. 5 shows a configuration example of the roll-to-roll sputtering apparatus 50.
  • the roll-to-roll sputtering apparatus 50 includes a casing 51 that houses most of the components.
  • the shape of the housing 51 is shown as a rectangular parallelepiped shape, but the shape of the housing 51 is not particularly limited, and may be any shape depending on the device accommodated therein, the installation location, the pressure resistance performance, and the like. It can be.
  • the shape of the housing 51 can be a cylindrical shape.
  • the inside of the casing 51 can be depressurized to 10 ⁇ 3 Pa or less, and more preferably 10 ⁇ 4 Pa or less. Note that it is not necessary that the entire interior of the casing 51 can be reduced to the above pressure, and it can be configured such that only the lower region in the figure in which a can roll 53 (to be described later) where sputtering is performed can be reduced to the above pressure. .
  • an unwinding roll 52 In the housing 51, an unwinding roll 52, a can roll 53, sputtering cathodes 54a to 54d, a front feed roll 55a, a rear feed roll 55b, tension rolls 56a and 56b, which supply a substrate for forming a base metal layer, A winding roll 57 can be arranged.
  • guide rolls 58a to 58h, a heater 61, and the like can be arbitrarily provided on the substrate conveyance path on which the base metal layer is formed.
  • the unwinding roll 52, the can roll 53, the front feed roll 55a, and the winding roll 57 can be provided with power by a servo motor.
  • the unwinding roll 52 and the winding roll 57 are configured so that the tension balance of the base material on which the base metal layer is formed is maintained by torque control using a powder clutch or the like.
  • the configuration of the can roll 53 is not particularly limited.
  • the surface of the can roll 53 is finished with hard chrome plating, and a coolant and a heating medium supplied from the outside of the casing 51 are circulated inside the can roll 53 so as to be adjusted to a substantially constant temperature. It is preferable to be configured to be able to.
  • the tension rolls 56a and 56b have, for example, a surface finished with hard chrome plating and provided with a tension sensor.
  • front feed roll 55a, the rear feed roll 55b, and the guide rolls 58a to 58h are preferably finished with hard chrome plating.
  • the sputtering cathodes 54a to 54d are preferably magnetron cathode type and are arranged to face the can roll 53.
  • the size of the sputtering cathodes 54a to 54d is not particularly limited, but the width direction dimension of the base material on which the base metal layer of the sputtering cathodes 54a to 54d is formed may be wider than the width of the base material on which the base metal layer is formed. preferable.
  • the base material on which the base metal layer is formed is transported through a roll-to-roll sputtering apparatus 50, which is a roll-to-roll vacuum film forming apparatus, and the base metal is formed by sputtering cathodes 54a to 54d facing the can roll 53. A layer is deposited.
  • a predetermined target is mounted on the sputtering cathodes 54a to 54d, and the base material on which the base metal layer is formed is set on the unwinding roll 52.
  • the inside of the apparatus is evacuated by vacuum pumps 60a and 60b.
  • a sputtering gas such as argon is introduced into the casing 51 by the gas supply means 59.
  • the flow rate of the sputtering gas and the opening of the pressure adjusting valve provided between the vacuum pump 60b and the casing 51 are adjusted to maintain the inside of the apparatus at, for example, 0.13 Pa or more and 13 Pa or less. It is preferred to carry out the membrane.
  • the gas supply means 59 can have a cylinder (not shown) for each gas type of the sputtering gas to be supplied, for example.
  • a gas flow controller (MFC) or a valve may be provided between the cylinder and the casing 51 as shown in the drawing for each gas type so that the flow rate of the supplied sputtering gas can be adjusted.
  • vacuum gauges 62 a and 62 b are installed in the casing 51, and the degree of vacuum in the casing 51 when the casing 51 is evacuated or when sputtering gas is supplied into the casing 51. Can be configured to adjust.
  • the adhesion between the insulator base material and the base metal layer can be particularly improved.
  • a base metal layer can contain a metal as a main component, for example, its adhesiveness with a copper layer is also high. For this reason, peeling of a copper layer can be suppressed especially by arrange
  • the thickness of the base metal layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.
  • the copper thin film layer can be formed on the base metal layer, and is preferably formed directly on the upper surface of the base metal layer without an adhesive.
  • the method of forming the copper thin film layer is not particularly limited, but it is preferable to form the film by, for example, a dry plating method.
  • a dry plating method it can be formed directly on the base metal layer without using an adhesive.
  • a sputtering method for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.
  • a sputtering method for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.
  • a copper target is attached to the sputtering cathodes 54a to 54d, and an insulating base material on which a base metal layer has been formed in advance is used as the unwinding roll 52.
  • the inside of the apparatus is evacuated by the vacuum pumps 60a and 60b.
  • sputtering gas is introduced into the casing 51 by the gas supply means 59.
  • the flow rate of the sputtering gas and the opening of the pressure adjusting valve provided between the vacuum pump 60b and the casing 51 are adjusted to maintain the inside of the apparatus at, for example, 0.13 Pa or more and 13 Pa or less. It is preferred to carry out the membrane.
  • the thickness of the copper thin film layer is not particularly limited, but it also functions as a power feeding layer when forming a copper plating film, and is preferably 10 nm or more, and more preferably 50 nm or more.
  • the upper limit of the thickness of the copper thin film layer is not particularly limited, the copper thin film layer is formed by, for example, a dry plating method as described above, and is preferably 300 nm or less from the viewpoint of productivity, and is 200 nm or less. More preferably.
  • the copper plating film can be formed on the copper thin film layer.
  • the copper plating film is also preferably formed directly on the upper surface of the copper thin film layer without using an adhesive.
  • the method for forming the copper plating film is not particularly limited, but it is preferable to form the film by, for example, a wet plating method.
  • the conditions in the step of forming the copper plating film by the wet plating method that is, the conditions for the electroplating treatment are not particularly limited, and various conditions according to ordinary methods may be adopted.
  • a copper plating film can be formed by supplying a base material on which a copper thin film layer is formed in a plating tank containing a copper plating solution and controlling the current density and the transport speed of the base material.
  • the copper plating film can have one surface facing the copper thin film layer and another surface located on the opposite side of the one surface.
  • concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less in the depth range from the other surface to 0.3 micrometer.
  • the method for forming the copper plating film so that the sulfur concentration in the copper plating film satisfies the above-mentioned regulations is not particularly limited.
  • a plating solution to be used is used.
  • the method of adding the organic compound containing a sulfur atom in the inside is mentioned.
  • an electroplating method can be preferably used as the wet plating method.
  • the electroplating conditions are not particularly limited, and various conditions according to ordinary methods may be employed. For example, by controlling the content and current density of a sulfur atom-containing organic compound in a copper plating solution, which is a plating solution, and the conveyance speed, the above-mentioned sulfur is spread over a range from another surface to a depth of 0.3 ⁇ m. A copper plating film having a concentration can be formed.
  • the content of the organic compound containing a sulfur atom in the copper plating solution used when forming the copper plating film is not particularly limited, but is preferably, for example, 2 mass ppm or more and 25 mass ppm or less, More preferably, it is 5 mass ppm or more and 15 mass ppm or less. This is because the content of the organic compound containing sulfur atoms in the copper plating solution is 2 mass ppm or more and 25 mass ppm or less, so that the sulfur concentration in the range from the other surface of the copper plating film to a depth of 0.3 ⁇ m. It is because it becomes especially easy to make the above range.
  • the sulfur concentration in the part exceeding 0.3 ⁇ m from the other surface of the copper plating film is not particularly limited, and for example, the sulfur concentration may be in the above range over the entire copper plating film.
  • the copper plating film preferably contains, for example, copper as a main component and further contains the above-mentioned concentration of sulfur, and the copper plating film is more preferably composed of copper and the above-described concentration of sulfur.
  • the copper plating film is composed of copper and sulfur, inevitable components derived from the plating solution, impurities, and the like may be included in the copper plating film.
  • containing copper as a main component means that the copper content is 90 wt% or more.
  • the surface roughness of the other surface of the copper plating film is preferably 0.01 ⁇ m or more and 0.15 ⁇ m or less. This can suppress specular reflection (regular reflection) on the surface of the copper plating film by setting the surface roughness of the other surface of the copper plating film to 0.01 ⁇ m or more and 0.15 ⁇ m or less. This is because the adhesiveness to the mask used when patterning the film or the like can be maintained.
  • the method for etching the other surface of the copper plating film is not particularly limited, but can be performed by using, for example, an etching solution.
  • the etching solution to be used is not particularly limited, and a soft etching solution for copper can be preferably used.
  • the film thickness of the copper layer composed of the copper thin film layer and the copper plating film formed on the base metal layer is not particularly limited, and the electrical resistance value required for the conductive substrate for touch panel and patterning are not limited. It can be arbitrarily selected according to the wiring width after the process.
  • the film thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 ⁇ m or more and 4.1 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the electrical resistance value of the conductive substrate for touch panel can be made sufficiently low by setting the film thickness of the copper layer to 0.5 ⁇ m or more, and when the copper layer is patterned, the wiring pattern is a desired wiring. This is because it is possible to suppress narrowing than the width or disconnection. And by making the film thickness of a copper layer into 4.1 micrometers or less, the area of a copper layer side part becomes small and reflection of the light by a copper layer side part can be suppressed. Furthermore, it is because it can suppress that side etching arises when etching a copper layer in order to form a wiring pattern.
  • a copper layer composed of a copper thin film layer and a copper plating film can function as a conductive layer in the conductive substrate for a touch panel of the present embodiment.
  • the conductive substrate for touch panels of this embodiment can make an electrical resistance value low by including the conductive layer using a metal.
  • a blackening layer can be disposed on the copper plating film. For this reason, it can further have the blackening layer formation process which forms the blackening layer which concerns.
  • the material constituting the blackened layer is not particularly limited, but the blackened layer preferably contains Ni (nickel). For this reason, a blackening layer formation process can be made into the process of forming the blackening layer containing nickel, for example on a copper plating film.
  • the method for forming the blackening layer is not particularly limited, and it may be formed by dry plating as in the case of the base metal layer, or may be formed by wet plating. it can.
  • the thickness of the blackened layer formed in the blackened layer forming step is not particularly limited, and may be arbitrarily selected according to the degree of reflectivity (regular reflectivity) required for the conductive substrate for touch panel. Can do.
  • the conductive substrate for a touch panel obtained by the method for manufacturing a conductive substrate for a touch panel of this embodiment is used for various applications such as a touch panel, a base metal layer, a copper thin film layer, and It is preferable that the copper plating film is patterned.
  • the base metal layer, the copper thin film layer, and the copper plating film can be patterned in accordance with, for example, a desired wiring pattern, and the base metal layer, the copper thin film layer, and the copper plating film are patterned in the same shape. It is preferable.
  • substrate of this embodiment can have the patterning process of patterning a base metal layer, a copper thin film layer, and a copper plating film.
  • the specific procedure of the patterning step is not particularly limited, and can be performed by an arbitrary procedure.
  • the conductive substrate 10A for a touch panel in which the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated on the insulator base material 11 as shown in FIG. 1A first, the other surface 14b of the copper plating film 14 is formed. A mask placement process is performed for placing a mask having a desired pattern thereon. Next, an etching step of supplying an etching solution to the other surface 14b of the copper plating film 14, that is, the surface side where the mask is disposed can be performed.
  • the etching solution used in the etching step is not particularly limited, and can be arbitrarily selected according to the materials constituting the base metal layer, the copper thin film layer, and the copper plating film.
  • the etching solution can be changed for each layer, and the base metal layer, the copper thin film layer, and the copper plating film can be simultaneously etched with the same etching solution.
  • the pattern formed in the etching process is not particularly limited.
  • the base metal layer, the copper thin film layer, and the copper plating film can be patterned to form a plurality of linear patterns.
  • the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 are parallel to each other and spaced apart from each other. Pattern.
  • the base metal layers 121 and 122, the copper thin film layers 131 and 132, and the copper plating films 141 and 142 are laminated on the first main plane 11a and the second main plane 11b of the insulator substrate 11.
  • a patterning process for patterning can also be performed on the conductive substrate for touch panel 10B.
  • a mask placement step of placing a mask having a desired pattern on the other surfaces 141b and 142b of the copper plating films 141 and 142 can be performed.
  • an etching step of supplying an etching solution to the other surfaces 141b and 142b of the copper plating films 141 and 142, that is, the surface side where the mask is disposed can be performed.
  • the base metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 are arranged in the Y-axis direction in FIG. Can be patterned into a plurality of linear patterns parallel to the direction perpendicular to the vertical direction.
  • the base metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 have a plurality of linear shapes parallel to the X-axis direction in FIG. 1B. Can be patterned into patterns. Thereby, as shown in FIG.
  • the patterned copper thin film layer 431 and the copper plating film 441 formed on the first main plane 11a side of the insulator base material with the insulator base material 11 interposed therebetween By the patterned copper thin film layer 432 and the copper plating film 442 formed on the second main plane 11b side, a conductive substrate for a touch panel provided with mesh-like wiring can be obtained.
  • the blackening layer was not provided so far
  • the mask was similarly arranged on the upper surface of the blackening layer, and the mask was arranged.
  • the blackened layer can also be patterned into a desired shape.
  • the manufacturing method of the laminated conductive substrate for touch panels can have a lamination process of laminating a plurality of conductive substrates obtained by the above-described conductive substrate manufacturing method.
  • a plurality of patterned conductive substrates for touch panel shown in FIGS. 2A and 2B can be laminated.
  • the first main plane 111a of the insulator base 111 of the one touch panel conductive substrate 201 and the insulator of the other touch panel conductive substrate 202 are provided. It can be implemented by laminating so that the second main plane 112b of the substrate 112 faces.
  • the two conductive substrates 201 and 202 for the touch panel can be fixed with an adhesive or the like, for example.
  • the conductive substrate 201 for one touch panel is turned upside down, and the second main plane 111b of the insulator base 111 of the conductive substrate 201 for one touch panel is insulated from the conductive substrate 202 for the other touch panel. You may laminate
  • a patterned copper thin film previously formed on one conductive substrate 201 for a touch panel The layer 231 and the copper plating film 241 can be laminated so that the patterned copper thin film layer 232 and the copper plating film 242 previously formed on the other touch panel conductive substrate 202 intersect.
  • 3A and 3B show an example in which a mesh-like wiring (wiring pattern) is formed by combining copper layers patterned in a linear shape, but the present invention is not limited to such a form.
  • the wiring constituting the wiring pattern that is, the shape of the patterned copper layer can be any shape.
  • the shape of the wiring constituting the mesh-like wiring pattern can be changed to various shapes such as jagged lines (zigzag straight lines) so that moire (interference fringes) does not occur between the images on the display.
  • the surface of the other surface of the copper plating film The roughness can be set within a predetermined range as described above. For this reason, the regular reflection of the light in the other surface of a copper plating film can be suppressed. Furthermore, since the base metal layer is disposed between the copper thin film layer and the insulator base material, regular reflection of the light incident through the insulator base material on the surface of the copper thin film layer can also be suppressed. Moreover, since it has a copper layer which consists of a copper thin film layer and a copper plating film and can function as a conductive layer, the electrical resistance value can be lowered.
  • the sulfur concentration in the copper plating film was measured by a secondary ion mass spectrometer (D-Dynamics-Secondary Ion Mass Spectroscopy: D-SIMS).
  • the measurement was carried out at a vacuum degree of the sample chamber: 8.0 ⁇ 10 ⁇ 8 Pa and a sputtering rate: about 22 liters / sec.
  • Sputtering was performed in advance under the same sputtering conditions as in actual analysis using a sample for sputtering rate measurement having a copper layer similar to the copper plating film, and the average sputtering rate was obtained. And when analyzing each sample, the depth was computed from sputtering time using this sputtering rate.
  • the sulfur concentration was measured after the copper plating film was formed and the other surface of the copper plating film was etched. A part of the prepared sample was cut out and used for measurement of sulfur concentration.
  • the surface roughness (Ra) was measured with an optical profiler (manufactured by Zygo, NewView 6200). The surface roughness (Ra) was measured by a method based on JIS B 0651 (2001).
  • the reflectance (regular reflectance) was measured by installing a reflectance measuring unit in an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2550).
  • the copper plating film surface of the conductive substrate for a touch panel produced in the following examples and comparative examples was irradiated with light having a wavelength of 400 nm or more and 700 nm or less at intervals of 1 nm with an incident angle of 5 ° and a light receiving angle of 5 °.
  • the reflectance was measured, and the average value was taken as the reflectance (regular reflectance).
  • the base metal layer was irradiated with light having a wavelength of 400 nm or more and 700 nm or less through the insulator base material under the same conditions, and the reflectance (regular reflectance) on the surface of the base metal layer was measured.
  • the shape of the wiring was observed with the laser microscope. When the wiring could be formed uniformly with a desired wiring width, it was evaluated as ⁇ . When a part of the formed wiring pattern includes a part different from the desired wiring width, it was evaluated as ⁇ .
  • Example preparation conditions As examples and comparative examples, conductive substrates were produced under the conditions described below and evaluated by the above-described evaluation method.
  • Example 1 Base metal layer formation process
  • An insulator base material which is a resin film made of polyethylene terephthalate resin (PET) having a width of 500 mm and a thickness of 100 ⁇ m, was set in the roll-to-roll sputtering apparatus 50 shown in FIG.
  • a base metal layer was formed on one main plane of the insulator base material.
  • a Ni—Cr alloy layer containing oxygen was formed as the base metal layer.
  • a Ni-17 wt% Cr alloy target was connected to the sputtering cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in FIG.
  • the heater 61 of the roll-to-roll sputtering apparatus 50 was heated to 60 ° C., and the insulator base material was heated to remove moisture contained in the insulator base material.
  • a copper target is connected to the sputtering cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in FIG. 5 to form a film, and the base material is insulated in the base metal layer forming step. What used the base metal layer as a film on the body base material was used.
  • the conditions for forming the metal thin film layer were the same as those in the base metal layer forming step except that the following two points and the target were changed as described above.
  • the point which formed the copper thin film layer so that film thickness might be set to 100 nm.
  • the copper plating film forming process In the copper plating film forming step, the copper plating film was formed to have a thickness of 1.0 ⁇ m by electroplating.
  • the copper plating solution used for forming the copper plating film is a copper sulfate solution having a temperature of 27 ° C. and a pH of 1 or less, and SPS (BiS (3-sulfopropyl) disulphide) 8 as an organic compound containing a sulfur atom. Mass ppm was contained.
  • etch CPE-750 Mitsubishi Gas Chemical Co., Ltd.
  • etching solution for copper is supplied to the entire other surface of the copper plating film, and the entire other surface of the copper plating film is etched for 10 seconds. Etching was performed while maintaining the contact state.
  • the obtained conductive substrate for touch panel includes a mask placement step of placing a mask on the upper surface of the copper plating film, and an etching step of performing etching by supplying an etchant to the upper surface of the copper plating film on which the mask is placed. A patterning step was performed. Thereby, as shown to FIG. 2A and FIG. 2B, the conductive substrate for touchscreens which has a linear wiring pattern was produced. When etching is performed, a cupric chloride aqueous solution is used as an etchant.
  • the above-described wiring shape evaluation was performed on the wiring pattern of the manufactured conductive substrate for a touch panel.
  • the base metal layer, the copper thin film layer, and the copper plating film are laminated on the insulator base material and patterned into the same shape as described above. Another sheet of conductive substrate was produced.
  • Example 2 In the copper plating film forming step, a conductive substrate for a touch panel was prepared in the same manner as in Example 1 except that etching was performed so that the entire other surface of the copper plating film was in contact with the etching solution for 15 seconds. Evaluation was performed. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 3 A conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the insulator substrate was a resin film made of cycloolefin polymer resin having a width of 500 mm and a thickness of 100 ⁇ m as the insulator substrate. Went. The evaluation results are shown in Table 1.
  • Example 4 In the copper plating film forming step, a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the SPS addition to the copper plating solution was 10 mass ppm and the film thickness of the copper plating film was 4 ⁇ m. Went. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 5 In the copper plating film forming step, a conductive substrate for a touch panel was prepared in the same manner as in Example 1 except that SPS addition to the copper plating solution was 5 ppm by mass and the film thickness of the copper plating film was 0.4 ⁇ m. And evaluated. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 6 In the copper plating film forming step, the conductive substrate for the touch panel is the same as in Example 1 except that the SPS addition to the copper plating solution is 5 ppm by mass and the film thickness of the formed copper plating film is 0.3 ⁇ m. Were prepared and evaluated. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 7 The conductive substrate for touch panel in the same manner as in Example 1 except that in the copper plating film forming step, SPS addition to the copper plating solution was 10 ppm by mass, and the film thickness of the formed copper plating film was 4.1 ⁇ m. Were prepared and evaluated. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 1 In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
  • a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the addition of SPS to the copper plating solution was 1 mass ppm. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • Example 2 In the copper plating film forming step, a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that SPS addition to the copper plating solution was 40 ppm by mass. The evaluation results are shown in Table 1.
  • the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 ⁇ m is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.
  • a touch panel laminated conductive substrate was also produced by laminating two touch panel conductive substrates produced under the same conditions.
  • the surface roughness Ra of the other surface of the copper plating film is 0.01 ⁇ m or more and 0.15 ⁇ m or less, and the reflectance on the other surface of the copper plating film is It was also confirmed that it was sufficiently low at 30% or less.
  • the evaluation of the wiring shape was also ⁇ , and it was confirmed that the desired wiring pattern could be obtained by the etching process.
  • Example 6 the film thickness of the copper plating film was 0.3 ⁇ m, and the film thickness of the copper layer was as thin as 0.4 ⁇ m. Therefore, there was a portion that was narrower than the desired wiring width in the obtained wiring pattern. It was. For this reason, the wiring shape evaluation was ⁇ .
  • Example 7 the thickness of the copper plating film was 4.1 ⁇ m and the thickness of the copper layer was 4.2 ⁇ m. Therefore, in the etching process in the patterning process, a part of the wiring pattern was side-etched. And a portion different from the desired wiring width was included. For this reason, the wiring shape evaluation was ⁇ .
  • the surface roughness Ra of the other surface of the copper plating film is as small as 0.009 ⁇ m, and the reflectance at the other surface of the copper plating film is as high as 31%.
  • the etching process in a patterning process since the reactivity with respect to the etching liquid of a copper plating film was low and the undissolved residue produced, evaluation of wiring shape was set to x.
  • the laminated conductive substrate for touch panel produced in Examples 1 to 7 contained a mesh-like wiring pattern as shown in FIGS. 3A and 3B.
  • Comparative Example 1 since the undissolved portion was generated in the wiring pattern as described above, it was not possible to obtain a laminated conductive substrate for a touch panel including a mesh-like wiring pattern.
  • Comparative Example 2 since the linearity of the wiring pattern was poor, it was not possible to obtain a laminated conductive substrate for a touch panel having a desired mesh-like wiring pattern.

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Abstract

Le problème à résoudre dans le cadre de la présente invention consiste à produire un substrat conducteur pour écrans tactiles. Ledit substrat contient : un matériau de base isolant ; une couche métallique de base disposée sur au moins une face du substrat isolant et contenant du nickel ; une fine couche de film de cuivre disposée sur la couche métallique de base ; et un film de placage de cuivre disposé sur la fine couche de film de cuivre et ayant une face orientée vers la fine couche de film de cuivre et une autre face positionnée sur le côté opposé à ladite première face. La concentration en soufre dans une région allant de la surface de l'autre face du film de placage de cuivre jusqu'à une profondeur de 0,3 µm est comprise entre 10 et 150 ppm en masse. La rugosité de surface (Ra) de l'autre face du film de placage de cuivre est comprise entre 0,01 et 0,15 µm.
PCT/JP2015/071690 2014-07-31 2015-07-30 Substrat conducteur pour écran tactile et procédé de fabrication d'un substrat conducteur pour écran tactile WO2016017773A1 (fr)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017185690A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 導電性基板、導電性基板の製造方法
JP2017185689A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 導電性基板
JP2017185671A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 硬化層を備えた基板を有する積層体フィルム
JP2017223831A (ja) * 2016-06-15 2017-12-21 住友金属鉱山株式会社 電極基板フィルム及びその製造方法
JP2018016827A (ja) * 2016-07-25 2018-02-01 住友金属鉱山株式会社 有機被膜の製造方法、導電性基板の製造方法、有機被膜製造装置
WO2018020940A1 (fr) * 2016-07-26 2018-02-01 パナソニックＩｐマネジメント株式会社 Stratifié pour électrodes transparentes, matériau d'électrode transparent, dispositif et procédé de production de stratifié pour électrodes transparentes
JPWO2017022596A1 (ja) * 2015-07-31 2018-09-20 住友金属鉱山株式会社 導電性基板、導電性基板の製造方法
KR20190030659A (ko) * 2016-07-12 2019-03-22 스미토모 긴조쿠 고잔 가부시키가이샤 적층체 기판, 도전성 기판, 적층체 기판 제조방법 및 도전성 기판 제조방법
JP2020097143A (ja) * 2018-12-17 2020-06-25 日東電工株式会社 保護フィルム付き導電性フィルム及び導電性フィルムの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7305342B2 (ja) * 2018-12-17 2023-07-10 日東電工株式会社 導電性フィルム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007039992A1 (fr) * 2005-10-05 2007-04-12 Nippon Mining & Metals Co., Ltd. Substrat bicouche flexible
WO2008126522A1 (fr) * 2007-03-15 2008-10-23 Nippon Mining & Metals Co., Ltd. Solution d'électrolyte de cuivre et substrat flexible à deux couches obtenu à l'aide de celle-ci
JP2014082320A (ja) * 2012-10-16 2014-05-08 Sumitomo Metal Mining Co Ltd ２層フレキシブル基板、並びに２層フレキシブル基板を基材としたプリント配線板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4086132B2 (ja) 2001-11-16 2008-05-14 株式会社ブリヂストン 透明導電性フィルムおよびタッチパネル
JP4700332B2 (ja) * 2003-12-05 2011-06-15 イビデン株式会社 多層プリント配線板
CN101917819B (zh) * 2005-06-13 2013-04-03 揖斐电株式会社 印刷线路板
KR101254407B1 (ko) * 2008-08-07 2013-04-15 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 무전해도금에 의해 구리 박막을 형성한 도금물
JP5361579B2 (ja) 2009-07-09 2013-12-04 信越ポリマー株式会社 大型ディスプレイ用のセンサパネル及びその製造方法
JP5267403B2 (ja) * 2009-09-29 2013-08-21 大日本印刷株式会社 タッチパネル用電極フィルム、該タッチパネル用電極フィルムの製造方法及びタッチパネル
JP5645581B2 (ja) * 2010-10-05 2014-12-24 富士フイルム株式会社 タッチパネル
JP2013069261A (ja) 2011-09-08 2013-04-18 Dainippon Printing Co Ltd タッチパネル用電極基材、及びタッチパネル、並びに画像表示装置
CN102637637B (zh) * 2012-04-28 2014-03-26 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板及其制作方法
JP5224203B1 (ja) * 2012-07-11 2013-07-03 大日本印刷株式会社 タッチパネルセンサ、タッチパネル装置および表示装置
EP2892056A4 (fr) * 2012-08-31 2016-04-06 Lg Chemical Ltd Structure conductrice et procédé de fabrication de cette dernière

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007039992A1 (fr) * 2005-10-05 2007-04-12 Nippon Mining & Metals Co., Ltd. Substrat bicouche flexible
WO2008126522A1 (fr) * 2007-03-15 2008-10-23 Nippon Mining & Metals Co., Ltd. Solution d'électrolyte de cuivre et substrat flexible à deux couches obtenu à l'aide de celle-ci
JP2014082320A (ja) * 2012-10-16 2014-05-08 Sumitomo Metal Mining Co Ltd ２層フレキシブル基板、並びに２層フレキシブル基板を基材としたプリント配線板

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017022596A1 (ja) * 2015-07-31 2018-09-20 住友金属鉱山株式会社 導電性基板、導電性基板の製造方法
JP2017185689A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 導電性基板
JP2017185671A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 硬化層を備えた基板を有する積層体フィルム
JP2017185690A (ja) * 2016-04-05 2017-10-12 住友金属鉱山株式会社 導電性基板、導電性基板の製造方法
JP2017223831A (ja) * 2016-06-15 2017-12-21 住友金属鉱山株式会社 電極基板フィルム及びその製造方法
KR20190030659A (ko) * 2016-07-12 2019-03-22 스미토모 긴조쿠 고잔 가부시키가이샤 적층체 기판, 도전성 기판, 적층체 기판 제조방법 및 도전성 기판 제조방법
KR102365980B1 (ko) * 2016-07-12 2022-02-22 스미토모 긴조쿠 고잔 가부시키가이샤 적층체 기판, 도전성 기판, 적층체 기판 제조방법 및 도전성 기판 제조방법
JP2018016827A (ja) * 2016-07-25 2018-02-01 住友金属鉱山株式会社 有機被膜の製造方法、導電性基板の製造方法、有機被膜製造装置
WO2018020940A1 (fr) * 2016-07-26 2018-02-01 パナソニックＩｐマネジメント株式会社 Stratifié pour électrodes transparentes, matériau d'électrode transparent, dispositif et procédé de production de stratifié pour électrodes transparentes
JPWO2018020940A1 (ja) * 2016-07-26 2019-06-27 パナソニックＩｐマネジメント株式会社 透視型電極用積層板、透視型電極素材、デバイス及び透視型電極用積層板の製造方法
US10691276B2 (en) 2016-07-26 2020-06-23 Panasonic Intellectual Property Management Co., Ltd. Laminate for see-through electrodes, see-through electrode material, device and method for producing laminate for see-through electrodes
JP2020097143A (ja) * 2018-12-17 2020-06-25 日東電工株式会社 保護フィルム付き導電性フィルム及び導電性フィルムの製造方法
JP7262218B2 (ja) 2018-12-17 2023-04-21 日東電工株式会社 保護フィルム付き導電性フィルム及び導電性フィルムの製造方法

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