WO2017022596A1 - Substrat conducteur et procede de fabrication d'un substrat conducteur - Google Patents

Substrat conducteur et procede de fabrication d'un substrat conducteur Download PDF

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Publication number
WO2017022596A1
WO2017022596A1 PCT/JP2016/072055 JP2016072055W WO2017022596A1 WO 2017022596 A1 WO2017022596 A1 WO 2017022596A1 JP 2016072055 W JP2016072055 W JP 2016072055W WO 2017022596 A1 WO2017022596 A1 WO 2017022596A1
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WIPO (PCT)
Prior art keywords
layer
metal layer
metal
conductive substrate
adhesion
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Application number
PCT/JP2016/072055
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English (en)
Japanese (ja)
Inventor
志賀　大樹
宏樹 秦
芳英 西山
貴広 須田
裕洲 葉
宗和 葉
志明 胡
弘信 有馬
Original Assignee
住友金属鉱山株式会社
介面光電股▲ふん▼有限公司
ジェイタッチ・ジャパン株式会社
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Application filed by 住友金属鉱山株式会社, 介面光電股▲ふん▼有限公司, ジェイタッチ・ジャパン株式会社 filed Critical 住友金属鉱山株式会社
Priority to JP2017532529A priority Critical patent/JP6705455B2/ja
Publication of WO2017022596A1 publication Critical patent/WO2017022596A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Definitions

  • the present invention relates to a conductive substrate and a method for manufacturing a conductive substrate.
  • the capacitive touch panel converts information on the position of an adjacent object on the panel surface into an electrical signal by detecting a change in capacitance caused by the object adjacent to the panel surface. Since the conductive substrate used for the capacitive touch panel is installed on the surface of the display, the material of the conductive layer of the conductive substrate is required to have low reflectance and be difficult to be visually recognized.
  • Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium tin oxide) film is formed as a transparent conductive film on a polymer film.
  • a conductive substrate in which a black layer formed of a material capable of suppressing light reflection on the surface of the metal layer is formed on the upper surface of the metal layer together with a metal layer formed of a metal foil such as copper has been studied. .
  • the blackened layer is formed on the upper surface of the metal layer, the adhesion between the metal layer and the blackened layer is not sufficient, and the blackened layer may peel off when patterning the metal layer or the blackened layer. There was a problem.
  • an object of one aspect of the present invention is to provide a conductive substrate in which the blackened layer is prevented from peeling off.
  • a transparent substrate A metal layer formed on at least one surface of the transparent substrate; A protective layer formed on the metal layer and containing an organic compound containing a sulfur atom and / or a nitrogen atom; There is provided a conductive substrate having a blackening layer formed on the protective layer.
  • the explanatory schematic diagram of the mechanism in which the blackening layer peels in the conventional conductive substrate The explanatory schematic diagram of the mechanism in which the blackening layer peels in the conventional conductive substrate.
  • the structure explanatory view of the conductive substrate concerning the embodiment of the present invention The structure explanatory view of the conductive substrate concerning the embodiment of the present invention.
  • the conductive substrate of the present embodiment includes a transparent substrate, a metal layer formed on at least one surface of the transparent substrate, and an organic compound formed on the metal layer and containing sulfur atoms and / or nitrogen atoms. It can have a protective layer to be contained and a blackening layer formed on the protective layer.
  • the conductive substrate in the present embodiment is a substrate having a metal layer, a protective layer, and a blackened layer on the surface of the transparent base material before patterning the metal layer, and a substrate obtained by patterning the metal layer. That is, the wiring board is included. Since the conductive substrate after patterning the metal layer, the protective layer, and the blackening layer includes a region where the transparent base material is not covered with the metal layer or the like, it can transmit light and becomes a transparent conductive substrate. Yes.
  • the transparent substrate is not particularly limited, and a resin substrate (resin film) that transmits visible light, a glass substrate, or the like can be preferably used.
  • a resin such as a polyamide resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, a cycloolefin resin, a polyimide resin, or a polycarbonate resin can be preferably used.
  • PET polyethylene terephthalate
  • COP cycloolefin polymer
  • PEN polyethylene naphthalate
  • polyimide polycarbonate
  • the like can be more preferably used as the material for the resin substrate that transmits visible light.
  • the thickness of the transparent base material is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, and the like required for a conductive substrate.
  • the thickness of the transparent substrate can be, for example, 10 ⁇ m or more and 200 ⁇ m or less.
  • the thickness of the transparent substrate is preferably 20 ⁇ m or more and 120 ⁇ m or less, and more preferably 20 ⁇ m or more and 100 ⁇ m or less.
  • the thickness of the transparent substrate is preferably 20 ⁇ m or more and 50 ⁇ m or less.
  • the total light transmittance of the transparent substrate is preferably higher.
  • the total light transmittance is preferably 30% or more, and more preferably 60% or more.
  • the visibility of the display can be sufficiently ensured when used for, for example, a touch panel.
  • the total light transmittance of the transparent substrate can be evaluated by the method defined in JIS K 7361-1.
  • the transparent substrate can have a first main plane and a second main plane.
  • the main plane here refers to the plane part with the largest area among the surfaces contained in a transparent base material.
  • a 1st main plane and a 2nd main plane mean the surface arrange
  • the second main plane can also be referred to as a plane located on the opposite side of the first main plane in one transparent substrate.
  • the material which comprises a metal layer is not specifically limited, The material which has the electrical conductivity according to the application can be selected,
  • the material which comprises a metal layer is Cu, Ni, Mo, Ta, Ti, V, Cr , Fe, Mn, Co and W are preferably a copper alloy with at least one metal selected from the group consisting of copper, or a material containing copper.
  • the metal layer can be a copper layer made of copper.
  • the method for forming the metal layer on the transparent substrate is not particularly limited, it is preferable not to dispose an adhesive between the transparent substrate and the metal layer in order not to reduce the light transmittance. That is, the metal layer is preferably formed directly on at least one surface of the transparent substrate. In addition, when arrange
  • the metal layer In order to directly form the metal layer on the upper surface of the transparent substrate, the metal layer preferably has a metal thin film layer. Moreover, the metal layer may have a metal thin film layer and a metal plating layer.
  • a metal thin film layer can be formed on a transparent substrate by a dry plating method, and the metal thin film layer can be used as a metal layer. Thereby, a metal layer can be directly formed on the transparent substrate without using an adhesive.
  • the dry plating method will be described in detail later.
  • a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.
  • the metal thin film layer and the metal plating layer are formed by forming the metal plating layer by electroplating, which is a kind of wet plating method, using the metal thin film layer as a power feeding layer. It can also be a metal layer. Since the metal layer has the metal thin film layer and the metal plating layer, the metal layer can be directly formed on the transparent substrate without using an adhesive.
  • the thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it can be arbitrarily selected according to the magnitude of the current supplied to the wiring, the wiring width, and the like.
  • the thickness of the metal layer is preferably 5 ⁇ m or less, and more preferably 3 ⁇ m or less.
  • the metal layer preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and 150 nm. More preferably, it is the above.
  • a metal layer has a metal thin film layer and a metal plating layer as mentioned above, it is preferable that the sum total of the thickness of a metal thin film layer and the thickness of a metal plating layer is the said range.
  • the thickness of the metal thin film layer is not particularly limited.
  • the thickness is preferably 500 nm or more.
  • the metal layer can be used as a wiring by patterning it into a desired wiring pattern, for example. And since a metal layer can make an electrical resistance value lower than ITO conventionally used as a transparent conductive film, the electrical resistance value of an electroconductive board
  • substrate can be made small by providing a metal layer.
  • the conductive substrate of this embodiment by disposing a protective layer to be described later, it is possible to suppress the blackening layer from peeling off from the metal layer during patterning.
  • the surface roughness of the surface of the metal layer facing the protective layer can be further improved through the protective layer so that the adhesion between the metal layer and the blackened layer can be further increased and the blackened layer can be further prevented from peeling.
  • the thickness Ra is preferably 0.03 ⁇ m or more and 0.08 ⁇ m or less.
  • the surface roughness Ra here is defined in JIS B 0601 and can be evaluated by, for example, a stylus method or an optical method.
  • the method of setting the surface roughness Ra of the surface of the metal layer facing the protective layer within the above range is not particularly limited, and any method can be selected.
  • a method of forming a rough metal layer according to film forming conditions, or after forming a smooth metal layer, the surface of the metal layer facing the protective layer is roughened by sandblasting, micro roughening etching, or the like.
  • a desired surface roughness Ra can be obtained by the method.
  • the protective layer can be formed on the metal layer and can contain an organic compound containing a sulfur atom and / or a nitrogen atom.
  • the inventors of the present invention have studied the cause of peeling of the blackened layer when patterning the metal layer or blackened layer on a conventional conductive substrate.
  • the blackened layer 2 includes the fine holes 3 first. It was.
  • the etching solution is supplied to the surface of the blackening layer 2 for patterning, the etching solution penetrates from the fine holes 3 included in the blackening layer 2 to the surface of the metal layer 1 as shown in FIG. 1B. In some cases, the surface melts and a gap 4 is formed between the metal layer 1 and the blackened layer 2.
  • the contact area between the metal layer 1 and the blackening layer 2 is reduced, the adhesion between the metal layer 1 and the blackening layer 2 is significantly reduced, and the blackening layer 2 may be peeled off from the metal layer 1. It is thought that there was.
  • the protective layer is disposed between the metal layer and the blackened layer, thereby improving the adhesion between the metal layer and the blackened layer via the protective layer. It is considered that the height is higher than that of the conventional conductive substrate shown in FIGS. 1A and 1B. For this reason, it becomes possible to suppress that a blackening layer peels from a metal layer.
  • the material for the protective layer is not particularly limited, and any material can be used without particular limitation as long as it can prevent the blackened layer from peeling off from the metal layer during etching.
  • an organic compound containing a sulfur atom and / or a nitrogen atom can be preferably used.
  • the protective layer preferably contains an organic compound containing a sulfur atom and / or a nitrogen atom, and more preferably is composed of the above-described organic compound containing a sulfur atom and / or a nitrogen atom.
  • a benzotriazole type compound a mercaptobenzothiazole type compound, an imidazole type compound, amines etc. can be used preferably.
  • benzotriazole compounds include 1,2,3-benzotriazole (Chemical Formula 1), 1- [N, N-bis (2-ethylhexyl) aminomethyl] benzotriazole (Chemical Formula 2), carboxybenzotriazole (Chemical Formula) 3) 1- [N, N-bis (2-ethylhexyl) aminomethyl] methylbenzotriazole (Formula 4), 2,2 ′-[[(Methyl-1H-benzotriazol-1-yl) methyl] imino] Bisethanol (chemical formula 5), 1,2,3-benzotriazole sodium salt aqueous solution (chemical formula 6), tolyltriazole (5-methyl 1H-benzotriazole), tolyltriazole sodium salt and the like can be preferably used.
  • imidazole compound for example, alkylimidazole, benzimidazole, allylphenylimidazole, or the like can be preferably used.
  • a benzotriazole-based compound can be more preferably used as the organic compound containing a sulfur atom and / or a nitrogen atom. That is, it is more preferable that the protective layer contains a benzotriazole-based compound.
  • the blackened layer can be formed on the upper surface of the protective layer.
  • the material of the blackening layer is not particularly limited, and any material that can suppress the reflection of light on the surface of the metal layer can be suitably used.
  • the blackening layer preferably contains at least one metal selected from, for example, Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the blackening layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • the blackening layer can include a metal alloy containing at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. . Also in this case, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • a metal alloy containing at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn a Cu—Ti—Fe alloy is used.
  • a Cu—Ni—Fe alloy, Ni—Cu alloy, Ni—Zn alloy, Ni—Ti alloy, Ni—W alloy, Ni—Cr alloy, and Ni—Cu—Cr alloy can be preferably used.
  • the method for forming the blackened layer is not particularly limited, and can be formed by any method, for example, by a dry method or a wet method.
  • the specific method is not particularly limited, but for example, a dry plating method such as a sputtering method, an ion plating method or a vapor deposition method can be preferably used.
  • a dry plating method such as a sputtering method, an ion plating method or a vapor deposition method
  • the blackening layer is formed by a dry method, it is more preferable to use a sputtering method because the film thickness can be easily controlled.
  • one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the blackened layer, and in this case, the reactive sputtering method can be more preferably used.
  • a target containing a metal species constituting the blackened layer can be used as the target.
  • the blackened layer contains an alloy
  • a target may be used for each metal species contained in the blackened layer, and the alloy may be formed on the surface of the film-deposited body such as a substrate, and is included in the blackened layer in advance. It is also possible to use a target obtained by alloying a metal.
  • the blackened layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen
  • these are added to the atmosphere when the blackened layer is formed, so that the blackened layer Can be added inside.
  • carbon monoxide gas and / or carbon dioxide gas is used
  • oxygen, oxygen gas is used
  • hydrogen, hydrogen gas and / or water is used.
  • nitrogen gas can be added to the atmosphere during sputtering.
  • One or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the blackening layer by adding these gases to the inert gas when forming the blackening layer.
  • Argon can be preferably used as the inert gas.
  • the blackened layer When the blackened layer is formed by a wet method, it can be formed by, for example, an electroplating method using a plating solution corresponding to the material of the blackened layer.
  • the thickness of the blackening layer is not particularly limited, but is preferably 15 nm or more, for example, and more preferably 25 nm or more. This is because when the thickness of the blackened layer is thin, reflection of light on the surface of the metal layer may not be sufficiently suppressed. Therefore, the thickness of the blackened layer is set to 15 nm or more as described above. This is because it is preferable to configure so that reflection of light on the surface of the layer can be particularly suppressed.
  • the upper limit of the thickness of the blackening layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming the wiring are increased, resulting in an increase in cost. Will be invited.
  • the thickness of the blackened layer is preferably 70 nm or less, and more preferably 50 nm or less.
  • the reflection of light on the surface of the metal layer can be suppressed by arranging the blackened layer as described above. For this reason, when it uses for uses, such as a touch panel, for example, it becomes possible to suppress the fall of the visibility of a display.
  • the conductive substrate can be provided with any layer other than the above-mentioned transparent base material, metal layer, protective layer, and blackening layer.
  • an adhesion layer can be provided.
  • the metal layer can be formed on the transparent substrate, but when the metal layer is directly formed on the transparent substrate, the adhesion between the transparent substrate and the metal layer may not be sufficient. . For this reason, when a metal layer is directly formed on the upper surface of the transparent substrate, the metal layer may be peeled off from the transparent substrate during the production process or use.
  • an adhesion layer can be disposed on the transparent substrate in order to improve the adhesion between the transparent substrate and the metal layer.
  • the adhesion layer between the transparent substrate and the metal layer By disposing the adhesion layer between the transparent substrate and the metal layer, the adhesion between the transparent substrate and the metal layer can be improved, and the metal layer can be prevented from peeling from the transparent substrate.
  • the adhesion layer can function as a blackening layer. For this reason, it becomes possible to suppress the reflection of the light of the metal layer by the light from the lower surface side of the metal layer, that is, the transparent base material side.
  • the material constituting the adhesion layer is not particularly limited, the adhesion strength with the transparent base material and the metal layer, the degree of suppression of light reflection on the surface of the required metal layer, and the use of a conductive substrate It can be arbitrarily selected according to the degree of stability to the environment (for example, humidity and temperature).
  • the adhesion layer preferably contains at least one metal selected from, for example, Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn.
  • the adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • the adhesion layer can include a metal alloy including at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Also in this case, the adhesion layer can further include one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.
  • a metal alloy containing at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn a Cu—Ti—Fe alloy is used as a metal alloy containing at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn.
  • a Cu—Ti—Fe alloy is used as a metal alloy containing at least two kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn.
  • the method for forming the adhesion layer is not particularly limited, but it is preferable to form the film by a dry plating method.
  • a dry plating method for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used.
  • a sputtering method it is more preferable to use a sputtering method because the film thickness can be easily controlled.
  • one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the adhesion layer, and in this case, a reactive sputtering method can be more preferably used.
  • the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen
  • one or more elements selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the adhesion layer Can be added to the adhesion layer.
  • carbon monoxide gas and / or carbon dioxide gas when adding oxygen, oxygen gas, when adding hydrogen, hydrogen gas and / or water
  • nitrogen gas can be added to the atmosphere when dry plating is performed.
  • a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating.
  • an inert gas For example, argon can be used preferably.
  • the adhesion layer By forming the adhesion layer by the dry plating method as described above, the adhesion between the transparent substrate and the adhesion layer can be enhanced. And since an adhesion layer can contain a metal as a main component, for example, its adhesiveness with a metal layer is also high. For this reason, peeling of a metal layer can be suppressed by arrange
  • the thickness of the adhesion layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.
  • the thickness of the adhesion layer is preferably 3 nm or more as described above.
  • the upper limit value of the thickness of the adhesion layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming the wiring are increased, resulting in an increase in cost. Will be invited.
  • the thickness of the adhesion layer is preferably 50 nm or less as described above, more preferably 35 nm or less, and further preferably 33 nm or less.
  • the conductive substrate of the present embodiment includes a transparent base material, a metal layer, a protective layer, and a blackening layer, and the metal layer, the protective layer, and the blackening layer are provided on the transparent base material. It can be set as the structure laminated
  • FIGS. 2A and 2B show examples of cross-sectional views of the conductive substrate of the present embodiment on a plane parallel to the lamination direction of the transparent base material, the metal layer, and the blackening layer.
  • the metal layer 12, the protective layer 13, and the blackening layer 14 are laminated one by one on the first main plane 11a side of the transparent substrate 11. Can be configured. Further, like the conductive substrate 10B shown in FIG. 2B, the metal layers 12A and 12B and the protective layer 13A are respectively formed on the first main plane 11a side and the second main plane 11b side of the transparent base material 11. , 13B and the blackening layers 14A, 14B can be stacked one by one in that order.
  • the blackening layer 14 (14A, 14B) is disposed on the upper surface of the metal layer 12 (12A, 12B) via the protective layer 13 (13A, 13B). . For this reason, reflection of the light from the upper surface side of the metal layer 12 (12A, 12B) can be suppressed. Moreover, since the protective layer 13 (13A, 13B) is disposed, the blackening layer 14 (14A, 14B) can be prevented from peeling off.
  • an adhesion layer (not shown) can be provided between the transparent substrate 11 and the metal layer 12.
  • an adhesion layer can be provided between the transparent base material 11 and the metal layer 12A and / or between the transparent base material 11 and the metal layer 12B.
  • the adhesion layer By providing the adhesion layer, the adhesion between the transparent substrate 11 and the metal layer 12 (12A, 12B) can be improved, and the metal layer 12 (12A, 12B) is particularly prevented from peeling from the transparent substrate 11. can do.
  • it is preferable to provide an adhesion layer because the reflection of light can be suppressed even on the surface of the metal layer 12 (12A, 12B) where the blackening layer is not provided.
  • the conductive substrate of this embodiment can be used for various applications such as a touch panel. And when using for various uses, it is preferable that the metal layer, protective layer, and blackening layer which are contained in the electroconductive board
  • the metal layer, the protective layer, and the blackened layer can be patterned in accordance with, for example, a desired wiring pattern, and the metal layer, the protective layer, and the blackened layer are preferably patterned in the same shape.
  • the adhesion layer when the metal layer, the protective layer, and the blackening layer are patterned, the adhesion layer can be patterned in accordance with a desired wiring pattern. For this reason, when an adhesion layer is provided, it is preferable to pattern the adhesion layer, the metal layer, the protective layer, and the blackening layer in the same shape.
  • the metal layer or the like can be patterned into a desired shape, but the pattern to be formed at this time is not particularly limited, and can be an arbitrary shape.
  • the pattern is preferably formed so that the conductive substrate has mesh-like wiring.
  • the metal layer constituting the wiring can be patterned so as to constitute a desired mesh-like wiring, and the protective layer, the blackening layer, and the like can be patterned in the same shape.
  • the method for forming a conductive substrate having mesh-like wiring is not particularly limited.
  • a mesh-like wiring can be formed by stacking two conductive substrates to form a laminated conductive substrate.
  • a plurality of linear wiring patterns such as a linear shape or a zigzag shape can be formed so as to be separated from each other along one direction.
  • the wiring pattern formed on one conductive substrate and the wiring pattern formed on the other conductive substrate are stacked so as to intersect each other.
  • the laminated conductive substrate can be fixed with an adhesive or the like, for example.
  • the metal layer 12A formed on the first main plane 11a side and the metal layer 12B formed on the second main plane 11b side are respectively patterned into predetermined shapes, and mesh-like wiring is formed. It can also be formed. Also in this case, it is preferable to pattern the protective layers 13A and 13B, the blackening layers 14A and 14B, and in some cases, the adhesion layer in accordance with the shapes of the metal layers 12A and 12B.
  • the method for patterning the metal layer or the like is not particularly limited. For example, after a mask having a shape corresponding to the pattern to be formed is placed on the upper surface of the blackened layer 14 (14A, 14B), an etching process is performed. Can be patterned.
  • the etching solution to be used is not particularly limited, and can be arbitrarily selected according to the material constituting the layer to be etched.
  • the etching solution can be changed for each layer, and the metal layer and the blackening layer, and in some cases, the adhesion layer can be etched simultaneously with the same etching solution.
  • the degree of light reflection of the conductive substrate of the present embodiment is not particularly limited, for example, the regular reflectance (reflectance) of light having a wavelength of 400 nm to 700 nm is preferably 35% or less, More preferably, it is 30% or less.
  • the reflectance of light having a wavelength of 400 nm or more and 700 nm or less is 35% or less, for example, even when used as a conductive substrate for a touch panel, the display visibility is hardly lowered, which is preferable.
  • the reflectance can be measured by irradiating the blackened layer 14 (14A, 14B) with light.
  • the blackened layer 14 is irradiated with light.
  • it can measure by irradiating light from the surface 14a side of the blackened layer 14.
  • light having a wavelength of 400 nm to 700 nm is irradiated on the surface 14a of the blackened layer 14 of the conductive substrate at a wavelength of 1 nm, for example, as described above, and the regular reflectance is measured.
  • the regular reflectance of the conductive substrate can be the regular reflectance of the conductive substrate.
  • the value of lightness (L * ) in the L * a * b * color system is small. This is because the blackening layer 14 (14A, 14B), the protective layer 13 (13A, 13B), and the metal layer 12 (12A, 12B) become less conspicuous as the value of the lightness (L * ) decreases.
  • the lightness (L * ) of the surface of the blackened layer 14 (14A, 14B) is preferably 70 or less.
  • substrate can be made small.
  • the surface resistance is preferably less than 0.2 ⁇ / ⁇ , and more preferably less than 0.10 ⁇ / ⁇ .
  • the method for measuring the surface resistance is not particularly limited. For example, it can be measured by a four-probe method, and it is preferable to perform the measurement so that the probe contacts the surface of the conductive substrate, for example, the blackened layer surface. . (Method for producing conductive substrate) Next, a configuration example of the method for manufacturing the conductive substrate according to this embodiment will be described.
  • the manufacturing method of the conductive substrate of this embodiment can have the following processes.
  • substrate can be suitably manufactured with the manufacturing method of the electroconductive board
  • the transparent base material used for the metal layer forming step can be prepared in advance.
  • the kind of transparent base material to be used is not particularly limited, a resin substrate (resin film) that transmits visible light, a glass substrate, or the like can be preferably used as described above.
  • the transparent base material can be cut into an arbitrary size in advance if necessary.
  • the metal layer preferably has a metal thin film layer as described above.
  • the metal layer can also have a metal thin film layer and a metal plating layer.
  • a metal layer formation process can have a process of forming a metal thin film layer, for example by a dry-type plating method.
  • the metal layer forming step includes a step of forming a metal thin film layer by a dry plating method, a step of forming a metal plating layer by an electroplating method which is a kind of wet plating method, using the metal thin film layer as a power feeding layer, You may have.
  • the dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, an evaporation method, a sputtering method, an ion plating method, or the like can be used.
  • a vapor deposition method a vacuum vapor deposition method can be used preferably.
  • the dry plating method used in the step of forming the metal thin film layer it is more preferable to use the sputtering method because the film thickness is particularly easy to control.
  • the conditions in the step of forming the metal plating layer by the wet plating method that is, the conditions for the electroplating treatment are not particularly limited, and various conditions according to ordinary methods may be adopted.
  • a metal plating layer can be formed by supplying a base material on which a metal thin film layer is formed in a plating tank containing a metal plating solution and controlling the current density and the conveyance speed of the base material.
  • a protective layer can be formed on the metal layer.
  • the protective layer can suppress the peeling of the blackened layer from the metal layer when the metal layer, the blackened layer, or the like is patterned.
  • the method for forming the protective layer is not particularly limited.
  • the protective layer can be formed by applying a solution containing a material constituting the protective layer on the metal layer and drying it.
  • the method for applying the solution containing the material constituting the protective layer on the metal layer is not particularly limited, and can be applied by any method.
  • a solution containing a material constituting the protective layer can be applied on the metal layer by spraying or dipping.
  • the material for the protective layer is not particularly limited, and any material can be used without particular limitation as long as it can prevent the blackened layer from peeling off from the metal layer during etching.
  • an organic compound containing a sulfur atom and / or a nitrogen atom can be preferably used.
  • the protective layer preferably contains an organic compound containing a sulfur atom and / or a nitrogen atom, and more preferably is composed of the above-described organic compound containing a sulfur atom and / or a nitrogen atom.
  • a benzotriazole type compound, a mercaptobenzothiazole type compound, an imidazole type compound, amines etc. can be used preferably.
  • a benzotriazole-based compound can be more preferably used as the organic compound containing a sulfur atom and / or a nitrogen atom. That is, it is more preferable that the protective layer contains a benzotriazole-based compound. Description of benzotriazole compounds that can be suitably used in the protective layer is omitted because they have already been described.
  • the method for forming the blackened layer is not particularly limited, and can be formed by any method.
  • a dry plating method such as a sputtering method, an ion plating method or a vapor deposition method can be preferably used.
  • the sputtering method is more preferable because the film thickness can be easily controlled.
  • the blackened layer can be formed by a wet method such as an electroplating method.
  • an optional step can be further performed in addition to the above-described steps.
  • an adhesion layer forming step of forming an adhesion layer on the surface of the transparent substrate on which the metal layer is formed can be performed.
  • the metal layer forming step can be carried out after the adhesion layer forming step, and is transparent in this step with the substrate on which the metal thin film layer described in the metal layer forming step is formed.
  • the base material has an adhesion layer formed on the base material.
  • the adhesion layer can be formed, for example, on the first main plane 11a which is one main plane of the transparent substrate 11 in FIG. 2A.
  • an adhesion layer can be formed on the first main plane 11a and / or the second main plane 11b of the transparent substrate 11.
  • the adhesion layer may be formed simultaneously on both main planes.
  • the adhesion layer may be formed on the other main plane.
  • the material constituting the adhesion layer is not particularly limited, the adhesion strength with the transparent substrate and the metal layer, the degree of suppression of light reflection on the surface of the metal layer, and the environment in which the conductive substrate is used ( For example, it can be arbitrarily selected according to the degree of stability with respect to humidity and temperature. Since materials that can be suitably used as the material constituting the adhesion layer have already been described, description thereof is omitted here.
  • the adhesion layer can be formed by a dry plating method.
  • a dry plating method for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used.
  • a sputtering method it is more preferable to use a sputtering method because the film thickness can be easily controlled.
  • one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the adhesion layer, and in this case, a reactive sputtering method can be more preferably used.
  • the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen
  • one or more selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the adhesion layer By adding a gas containing these elements, it can be added to the adhesion layer.
  • a gas containing these elements it can be added to the adhesion layer.
  • carbon monoxide gas and / or carbon dioxide gas when adding oxygen, oxygen gas, when adding hydrogen, hydrogen gas and / or water
  • nitrogen gas can be added to the atmosphere when dry plating is performed.
  • a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating.
  • an inert gas For example, argon can be used preferably.
  • a target containing a metal species constituting the adhesion layer can be used as the target.
  • the adhesion layer contains an alloy
  • a target may be used for each metal species contained in the adhesion layer, and the alloy may be formed on the surface of the film-formed body such as a transparent substrate.
  • An alloyed target can also be used.
  • the adhesion layer By forming the adhesion layer by the dry plating method as described above, the adhesion between the transparent substrate and the adhesion layer can be enhanced. And since an adhesion layer can contain a metal as a main component, for example, its adhesiveness with a metal layer is also high. For this reason, peeling of a metal layer can be suppressed by arrange
  • the thickness of the adhesion layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.
  • a metal layer surface processing step for processing the surface of the metal layer so that the surface of the metal layer on which the protective layer is formed (the surface facing the protective layer of the metal layer) has a predetermined surface roughness Ra may be performed. it can.
  • the surface of the metal layer on which the protective layer is formed has a surface roughness Ra of 0.03 ⁇ m or more and 0.08 ⁇ m or less. Processing steps can be performed.
  • the method of setting the surface roughness Ra of the surface on which the protective layer of the metal layer is formed is not particularly limited, and any method can be selected.
  • a method of forming a rough metal layer according to film forming conditions, or after forming a smooth metal layer, the surface of the metal layer facing the protective layer is roughened by sandblasting, micro roughening etching, or the like.
  • the method can be preferably used.
  • any of the metal layer 12A and the metal layer 12B Only the surface of the surface on which the protective layer is formed may be the above-described surface roughness Ra. Moreover, it is good also considering the surface of the surface which forms protective layer 13A, 13B as above-mentioned surface roughness Ra about both metal layer 12A, 12B.
  • the conductive substrate obtained by the conductive substrate manufacturing method of the present embodiment can be used for various applications such as a touch panel. And when using for various uses, it is preferable that the metal layer, protective layer, and blackening layer which are contained in the electroconductive board
  • the metal layer, the protective layer, and the blackening layer, and in some cases, the adhesion layer can be patterned in accordance with, for example, a desired wiring pattern.
  • the layers are preferably patterned in the same shape.
  • the manufacturing method of the conductive substrate of the present embodiment can include a patterning step of patterning the metal layer, the protective layer, and the blackening layer.
  • the patterning step can be a step of patterning the adhesion layer, the metal layer, the protective layer, and the blackening layer.
  • the specific procedure of the patterning step is not particularly limited, and can be performed by an arbitrary procedure.
  • a mask having a desired pattern is first placed on the blackened layer 14.
  • a mask placement step can be performed.
  • an etching step of supplying an etching solution to the upper surface of the blackening layer 14, that is, the surface side where the mask is disposed can be performed.
  • the etching solution used in the etching step is not particularly limited, and can be arbitrarily selected depending on the material constituting the layer to be etched.
  • the etching solution can be changed for each layer, and the metal layer, the protective layer, and the blackening layer, and in some cases, the adhesion layer can be etched simultaneously with the same etching solution.
  • a patterning process for patterning 10B can also be performed.
  • a mask placement step of placing a mask having a desired pattern on the blackening layers 14A and 14B can be performed.
  • an etching step of supplying an etching solution to the upper surfaces of the blackening layers 14A and 14B, that is, the surface side where the mask is disposed can be performed.
  • the pattern formed in the etching process is not particularly limited and can be an arbitrary shape.
  • the metal layer 12, the protective layer 13, and the blackening layer 14 include a plurality of straight lines or jagged lines (zigzag straight lines). A pattern can be formed.
  • a pattern can be formed so that the metal layer 12A and the metal layer 12B form a mesh-like wiring.
  • the protective layer 13A and the blackened layer 14A may be patterned to have the same shape as the metal layer 12A, and the protective layer 13B and the blackened layer 14B may be patterned to have the same shape as the metal layer 12B. preferable.
  • a lamination step of laminating two or more patterned conductive substrates may be performed.
  • laminating for example, by laminating so that the pattern of the metal layer of each conductive substrate intersects, a laminated conductive substrate provided with mesh-like wiring can be obtained.
  • the method of fixing two or more laminated conductive substrates is not particularly limited, but can be fixed by, for example, an adhesive.
  • the protective layer is provided between the metal layer and the blackened layer, for example, when the metal layer and the blackened layer are patterned in the patterning step. It can suppress that a blackening layer peels.
  • the conductive substrate obtained by the method for manufacturing the conductive substrate of the present embodiment has a metal layer
  • the electrical resistance should be lower than that of a conventional conductive substrate using ITO for the wiring layer. Can do.
  • the blackening layer is disposed, it is possible to suppress the reflection of light on the surface of the metal layer, and to suppress the deterioration of the visibility of the display when used as a conductive substrate for a touch panel, for example. Become.
  • Regular reflection by irradiating light with a wavelength of 400 nm or more and 700 nm or less at an interval of 1 nm with an incident angle of 5 ° and a light receiving angle of 5 ° on the surface of the blackened layer of the conductive substrate prepared in the following examples and comparative examples The average value was measured as the regular reflectance of the conductive substrate. (brightness) With respect to the blackened layer surface of the conductive substrate prepared in the following examples and comparative examples, light with a wavelength of 400 nm or more and 700 nm or less was emitted at intervals of 1 nm with an ultraviolet-visible spectrophotometer (model: UV-2600 manufactured by Shimadzu Corporation). The brightness was measured by irradiation.
  • Surface roughness Ra was measured about the surface which forms a protective layer among metal layers after a metal layer formation process. In addition, when the metal layer surface processing step is performed, the surface roughness Ra is measured after the metal layer surface processing step is performed.
  • the surface roughness Ra was measured using a laser microscope (manufactured by Keyence Corporation: VK9500). (Peeling test for blackened layer) The manufactured conductive substrate was subjected to a test for confirming whether the blackened layer was peeled off when etching was performed. In the test, an etching solution was sprayed on the entire surface of the blackened layer surface of the produced conductive substrate, left standing for 10 seconds, and then washed to evaluate whether the blackened layer was peeled off.
  • a cupric chloride aqueous solution having a concentration of 0.5 mol / l was used as an etchant.
  • sample preparation conditions As examples and comparative examples, conductive substrates were produced under the conditions described below and evaluated by the above-described evaluation method.
  • Example 1 Adhesion layer forming process
  • An adhesion layer was formed on one main plane of a transparent substrate made of polyethylene terephthalate resin (PET) having a length of 500 mm ⁇ width of 500 mm and a thickness of 50 ⁇ m.
  • PET polyethylene terephthalate resin
  • the transparent base material made of polyethylene terephthalate resin used as the transparent base material was evaluated to have a total light transmittance of 97% when evaluated by the method defined in JIS K 7361-1.
  • a Ni—Cr alloy layer containing oxygen was formed as an adhesion layer using a sputtering apparatus equipped with a Ni-17 wt% Cr alloy target. The procedure for forming the adhesion layer will be described below.
  • the above-mentioned transparent base material which was previously heated to 60 ° C. to remove moisture, was placed in the chamber of the sputtering apparatus.
  • Metal layer forming process In the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step were performed.
  • a substrate in which the adhesion layer was formed on the transparent substrate in the adhesion layer forming step was used, and a copper thin film layer was formed as the metal thin film layer on the adhesion layer.
  • the metal thin film layer is a sputtering apparatus as in the case of the adhesion layer except that a copper target is used and the inside of the chamber in which the substrate is set is evacuated and then an argon gas is supplied to form an argon atmosphere. Was formed.
  • the copper thin film layer which is a metal thin film layer, was formed to a thickness of 150 nm.
  • a copper plating layer was formed as the metal plating layer.
  • the copper plating layer was formed by electroplating so that the thickness of the copper plating layer was 2.0 ⁇ m.
  • the protective layer forming step After finishing the metal layer forming step, that is, after forming the copper plating layer, when the surface roughness Ra was measured for the surface on which the protective layer was formed, it was confirmed to be 0.04 ⁇ m.
  • the protective layer forming step the protective layer was formed on the metal layer of the laminate in which the adhesion layer and the metal layer were formed on the transparent substrate.
  • the protective layer forming step first, the above laminate was immersed in a 1,2,3-benzotriazole solution for 8 seconds. And after removing the solution adhering except the upper surface (surface on the opposite side to the surface opposite to the contact
  • Blackening layer forming process In the blackening layer forming step, a Ni—Cu layer containing oxygen was formed as a blackening layer by sputtering on the protective layer formed in the protective layer forming step.
  • a Ni—Cu alloy layer containing oxygen was formed as a blackening layer by a sputtering apparatus equipped with a Ni-35 wt% Cu alloy target. The procedure for forming the blackened layer will be described below.
  • adherence layer, the metal layer, and the protective layer on the transparent base material was set in the chamber of the sputtering device.
  • a blackening layer is formed on the upper surface of the metal layer, that is, the surface opposite to the surface facing the adhesion layer of the metal layer via the protective layer, and the adhesion layer and the metal layer are formed on the transparent substrate.
  • a conductive substrate in which a protective layer and a blackening layer were laminated in that order was obtained.
  • Example 2 A conductive substrate was produced in the same manner as in Example 1 except that after the metal layer forming step and before the protective layer forming step, the surface of the metal layer was roughened as a metal layer surface processing step.
  • the metal layer surface processing step was performed after the metal layer forming step, and the metal layer surface was processed by micro roughening etching.
  • Example 2 Thereafter, in the same manner as in Example 1, a protective layer forming step and a blackening layer forming step were performed to produce a conductive substrate.
  • the obtained conductive substrate has a structure in which an adhesion layer, a metal layer, and a blackening layer are laminated in this order on a transparent base material.

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Abstract

L'invention concerne un substrat conducteur ayant : une base transparente; une couche métallique formée sur au moins une surface de la base transparente; une couche de protection formée sur la couche métallique, la couche de protection contenant un composé organique qui comprend des atomes de soufre et/ou des atomes d'azote; et une couche de noircissement formée sur la couche de protection.
PCT/JP2016/072055 2015-07-31 2016-07-27 Substrat conducteur et procede de fabrication d'un substrat conducteur WO2017022596A1 (fr)

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JP2013228986A (ja) * 2012-04-24 2013-11-07 Samsung Electro-Mechanics Co Ltd タッチパネル
JP2014219963A (ja) * 2013-04-12 2014-11-20 信越ポリマー株式会社 センサーシート作製用シート及びその製造方法、タッチパッド用センサーシート及びその製造方法

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CN106575172B (zh) * 2014-07-31 2022-04-29 住友金属矿山股份有限公司 触控面板用导电性基板、触控面板用导电性基板的制造方法
JP6384267B2 (ja) * 2014-10-24 2018-09-05 大同特殊鋼株式会社 積層体

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JP2013228986A (ja) * 2012-04-24 2013-11-07 Samsung Electro-Mechanics Co Ltd タッチパネル
JP2014219963A (ja) * 2013-04-12 2014-11-20 信越ポリマー株式会社 センサーシート作製用シート及びその製造方法、タッチパッド用センサーシート及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018193940A1 (fr) * 2017-04-17 2018-10-25 住友金属鉱山株式会社 Substrat conducteur
JPWO2018193940A1 (ja) * 2017-04-17 2020-02-27 住友金属鉱山株式会社 導電性基板

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TW201719363A (zh) 2017-06-01

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