WO2016008223A1 - 液晶面板及其制备方法 - Google Patents

液晶面板及其制备方法 Download PDF

Info

Publication number
WO2016008223A1
WO2016008223A1 PCT/CN2014/088816 CN2014088816W WO2016008223A1 WO 2016008223 A1 WO2016008223 A1 WO 2016008223A1 CN 2014088816 W CN2014088816 W CN 2014088816W WO 2016008223 A1 WO2016008223 A1 WO 2016008223A1
Authority
WO
WIPO (PCT)
Prior art keywords
test
liquid crystal
test pad
tft
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/088816
Other languages
English (en)
French (fr)
Inventor
付延峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/410,391 priority Critical patent/US9638943B2/en
Publication of WO2016008223A1 publication Critical patent/WO2016008223A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136254—Checking; Testing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12—Test circuits or failure detection circuits included in a display system, as permanent part thereof

Definitions

  • the present invention relates to the field of liquid crystal technology, and in particular, to a liquid crystal panel and a method for fabricating the same.
  • Thin film transistor on display panel (Thin Film The Transistor (TFT) is located on the array substrate and functions as a circuit switch when the display panel operates. They transmit the image signals to the corresponding pixels in order. Therefore, in general, the display quality and lifetime of a liquid crystal display panel can be largely evaluated by measuring the electrical properties of the TFT.
  • TFT Thin film transistor on display panel
  • the electrical characteristics of the current TFT can only be measured after the array substrate of the liquid crystal display panel is completed, and the TFT is actually operated in the liquid crystal cell formed by the pair of the array substrate and the color filter substrate.
  • the TFT electrical properties measured only on the array substrate do not fully represent the electrical properties of the TFT operating in the liquid crystal cell.
  • the object of the present invention is to provide a liquid crystal panel and a preparation method thereof, which are intended to measure the electrical properties of the measuring TFT in the liquid crystal cell, which is closer to the real state.
  • a liquid crystal panel comprising at least one set of test interfaces composed of a source test pad, a drain test pad, a gate test pad, a plurality of liquid crystal cells, and at least one test TFT unit disposed adjacent to the test interface
  • the test TFT unit comprises:
  • a TFT for setting a source, a drain, and a gate
  • One end is connected to the gate of the TFT, and the other end is connected to the gate test lead of the gate test pad through the sealant;
  • One end is connected to the source of the TFT, and the other end is connected to the source test lead of the source test pad through the sealant;
  • Liquid crystal molecules are disposed between the array substrate and the color filter substrate for simulating an environment within the liquid crystal cell.
  • the test TFT unit is grown together with the liquid crystal cell.
  • the source test pad, the drain test pad, and the gate test pad are all metal foils.
  • the embodiment of the present invention provides the following technical solutions:
  • a liquid crystal panel comprising a plurality of liquid crystal cells, a test TFT unit, and a source test pad, a drain test pad, and a gate test pad, wherein the array substrate is formed by a color filter substrate, wherein
  • the test TFT unit includes:
  • One end is connected to the gate of the TFT, and the other end is connected to the gate test lead of the gate test pad through the sealant;
  • One end is connected to the source of the TFT, and the other end is connected to the source test lead of the source test pad through the sealant;
  • One end is connected to the drain of the TFT, and the other end is connected to the drain test lead of the drain test pad through the sealant.
  • the test TFT unit is disposed on a side of the liquid crystal panel adjacent to the source test pad, the drain test pad, and the gate test pad.
  • the test TFT unit further includes liquid crystal molecules disposed between the array substrate and the color filter substrate for simulating an environment within the liquid crystal cell.
  • the test TFT unit is grown together with the liquid crystal cell.
  • the source test pad, the drain test pad, and the gate test pad are all metal foils.
  • the embodiment of the present invention provides the following technical solutions:
  • a method for preparing a liquid crystal panel comprising the following steps:
  • the array substrate includes: a TFT provided with a source, a drain, and a gate; and at least one set of test interfaces composed of a source test pad, a drain test pad, and a gate test pad; At least one TFT is used to form a test TFT unit, the test TFT unit includes: a gate test lead connected to the gate of the TFT at one end and a gate test pad connected at the other end; and a source connected to the TFT at one end, The other end is connected to the source test lead of the source test pad; one end is connected to the drain of the TFT, and the other end is connected to the drain test lead of the drain test pad;
  • the array substrate is aligned with the color filter substrate, and is bonded by a sealant to form an accommodating space formed by the array substrate, the color filter substrate and the sealant.
  • a liquid crystal injection hole is disposed on the plastic frame;
  • Attachment of the polarizer is performed on the surface of the array substrate and the color filter substrate to form a liquid crystal panel.
  • the TFT forming the test TFT unit is located on a side of the liquid crystal panel adjacent to the test interface.
  • the source test pad, the drain test pad, and the gate test pad are all metal foils.
  • the source test pad, the drain test pad, and the gate test pad are respectively prepared by: the source lead, the drain lead, and one end of the gate lead Each is connected to a metal foil.
  • the source test pad, the drain test pad and the gate test pad are connected to a test device, and the quality of the liquid crystal panel is evaluated according to the test result.
  • the liquid crystal panel of the present invention and the method for fabricating the same realize measurement of the electrical properties of the TFT in the liquid crystal cell by designing the test TFT unit.
  • Embodiment 1 is a schematic view of an array substrate of a liquid crystal panel in Embodiment 1 of the present invention.
  • Fig. 2 is a schematic cross-sectional view showing a test TFT unit of a liquid crystal panel in the first embodiment of the present invention.
  • Embodiment 3 is a schematic view showing a preparation method of a liquid crystal panel in Embodiment 2 of the present invention.
  • FIG. 1 is a schematic diagram of a liquid crystal panel according to an embodiment of the present invention.
  • the liquid crystal panel includes a plurality of liquid crystal cells 10, and at least one test thin film transistor (TFT) unit 20, and at least one set of test interfaces composed of a source test pad 31, a drain test pad 32, and a gate test pad 33. .
  • TFT test thin film transistor
  • the source test pad 31, the drain test pad 32, and the gate test pad 33 are all metal foils, and the test interface is configured to connect to a test device (not shown).
  • the liquid crystal cell 10 is formed by sealing an TFT and injecting a liquid crystal by an array substrate, a color filter substrate, and a sealant.
  • the TFT unit 20 is tested, including: a TFT provided with a source 26, a drain 27, and a gate 25; a sealant 24 surrounding the TFT and connecting the array substrate and the color filter substrate;
  • the gate 25 and the other end of the TFT are connected to the gate test lead 23 of the gate test pad 33 through the sealant 24; one end is connected to the source 26 of the TFT, and the other end is connected through the sealant 24
  • the source test lead 21 of the source test pad 31 one end is connected to the drain 27 of the TFT, and the other end is connected to the drain test lead 22 of the drain test pad 32 through the sealant 24.
  • test leads 21, 22, 23
  • the TFTs of the selected portion may be selected by selecting a row on the outer side of the array substrate or every predetermined threshold. As on the side close to the above test pads (31, 32, 33), one TFT as the test TFT unit 20 is selected every five.
  • the TFT is formed on the array substrate 1.
  • the metal of the gate 25 is sequentially covered with a gate insulating layer 251 (typically a silicon nitride layer), an amorphous silicon semiconductor layer 252 (a-Si: H), and a doped silicon semiconductor 253 (n+).
  • a-Si:H the source 26 metal and the drain 27 metal are disposed on the doped amorphous silicon semiconductor 253.
  • the source 26 and the drain 27 are usually made of SD metal, and are coated with insulating protective layers 261 and 271 (PV). SiNx).
  • the glue completes the sealing; it can be understood that the sealant 24 surrounds the periphery of the TFT, and the liquid crystal molecules 28 overflow around the TFT for simulating the environment inside the liquid crystal cell.
  • the TFT in the test TFT unit 20 is grown together with the TFT in the liquid crystal cell 10. Therefore, electrical measurement of the other liquid crystal cell 10 can be obtained by performing electrical measurement on the test TFT unit 20.
  • test TFT unit 20 is usually disposed on the side of the liquid crystal panel near the three-pole test pad (31, 32, 33) for measurement. Further, in order to reduce the size, the above-described measuring TFT unit 20 can also be cut off after the measurement is completed. Of course, reservations are also possible.
  • an array substrate is formed.
  • the array substrate includes: a plurality of thin film transistors (TFTs), and a source test pad, a drain test pad, and a gate test pad.
  • TFTs thin film transistors
  • At least one TFT is used to form the test TFT unit, that is, it is additionally required to connect three test leads on the gate, the drain, and the source of the TFT. They are: a gate test lead connected to the gate of the TFT at one end and a gate test pad connected at the other end; a source test lead connected to the source of the TFT at one end and the source test pad at the other end; One end is connected to the drain of the TFT, and the other end is connected to the drain test lead of the drain test pad.
  • step 302 a color film substrate is formed. Since this step is the same as the conventional process, it will not be described here.
  • the array substrate is aligned with the color filter substrate and bonded by a sealant to form an accommodation space formed by the array substrate, the color filter substrate, and the sealant.
  • a certain gap should be reserved to form a receiving space.
  • a liquid crystal injection hole is disposed on the plastic frame of the receiving space.
  • step S304 liquid crystal is injected into the accommodation space to form a plurality of liquid crystal cells and at least one of the test TFT units.
  • the method of injecting the liquid crystal into the accommodating space may be a liquid crystal injection port reserved by sealing, or may be injected after cutting the accommodating space.
  • the injection port should be sealed.
  • step S305 the color filter substrate of the outer edge of the test TFT unit is cut to expose the source test pad, the drain test pad, and the gate test pad for TFT test.
  • the source test pad, the drain test pad and the gate test pad are respectively connected to the test device, and the liquid crystal is tested according to the test result generated by the test device. The quality of the panels is evaluated.
  • step S306 the polarizer is attached to the surface of the array substrate and the color filter substrate to form a liquid crystal panel.
  • the conventional TFT electrical measurement is generally performed after the formation of the array substrate (ie, in step S301 in Embodiment 2), but in fact, after completing the process of the liquid crystal cell cartridge, the electrical properties or channel properties are affected. Therefore, the measurement made in this step is not accurate enough.
  • the invention adds a three-pole test lead by making a part of the liquid crystal cell in the array substrate, and can completely simulate the scene in the liquid crystal box to complete the measurement when the liquid crystal cell is completed, thereby ensuring the accuracy of the data.
  • liquid crystal panel and the preparation method thereof have the advantages of simple process, no increase in cost, and the like.
  • the test TFT unit can also be cut off after the test is completed.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)

Abstract

一种液晶面板，包括液晶盒（10）、测试TFT单元（20）、源极测试垫（31）、漏极测试垫（32）、栅极测试垫（33）。测试TFT单元（20）包括：一端连接于TFT的栅极(25)，另一端穿过框胶（24）连接于栅极测试垫（33）的栅极测试引线（23），一端连接于TFT的源极(26)，另一端穿过框胶（24）连接于源极测试垫（31）的源极测试引线（21），一端连接于TFT的漏极(27)，另一端穿过框胶（24）连接于漏极测试垫（32）的漏极测试引线（22）。还提供一种液晶面板的制备方法。通过测试TFT单元（20）的设计实现对液晶盒（10）在成盒后的电性测量。

Description

液晶面板及其制备方法 技术领域
本发明涉及液晶技术领域，尤其涉及一种液晶面板及其制备方法。
 背景技术
位于显示面板上的薄膜晶体管（Thin Film Transistor，TFT）位于阵列基板上，在显示面板工作时起电路开关作用，它们按照顺序把图像信号传输至对应的像素。因此，一般来说，液晶显示面板的显示质量与寿命，很大部分可以通过对其TFT电性的测量来进行评估。
然而，当前TFT的电性特征，只能在液晶显示面板的阵列基板完成制作后测量，而TFT实际是阵列基板与彩膜基板对组形成的液晶盒内进行工作。仅在阵列基板测量的TFT电性不能完全代表TFT在液晶盒内工作的电性。
因此，如何设计一种易于测试其液晶盒内电性的液晶面板及其制备方法，成为液晶显示设备的一大研发方向。
 技术问题
本发明的目的在于提供一种液晶面板及其制备方法，旨在可以实现测量液晶盒内测量TFT电性，更接近其真实的状况。
 技术解决方案
一种液晶面板，其中，包括至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口、多个液晶盒、以及设置于靠近所述测试接口的至少一个测试TFT单元、其中，所述测试TFT单元包括：
设置源极、漏极、栅极的TFT；
围绕TFT并连接阵列基板与彩膜基板的框胶；
一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线；
一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线；
一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线；以及
设置在所述阵列基板与所述彩膜基板之间液晶分子，用于模拟液晶盒内的环境。
优选地，所述测试TFT单元与所述液晶盒一同生长形成。
优选地，所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
为解决上述技术问题，本发明实施例提供以下技术方案：
一种液晶面板，由阵列基板与彩膜基板进行成盒形成，所述阵列基板上包括多个液晶盒、测试TFT单元、以及源极测试垫、漏极测试垫、栅极测试垫，其中，所述测试TFT单元包括：
设置有源极、漏极、栅极的TFT；
围绕TFT的框胶；
一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线；
一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线；
一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线。
优选地，所述测试TFT单元设置于所述液晶面板的靠近所述源极测试垫、漏极测试垫、栅极测试垫的一侧。
优选地，所述测试TFT单元还包括设置在所述阵列基板与所述彩膜基板之间液晶分子，用于模拟液晶盒内的环境。
优选地，所述测试TFT单元与所述液晶盒一同生长形成。
优选地，所述源极测试垫、漏极测试垫、栅极测试垫皆为金属薄片。
为解决上述技术问题，本发明实施例提供以下技术方案：
一种液晶面板的制备方法，包括如下步骤：
制备阵列基板，所述阵列基板上包括：设置有源极、漏极、栅极的TFT、以及至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口；其中，至少一个TFT用于形成测试TFT单元，所述测试TFT单元包括：一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线；一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线；一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线；
制备彩膜基板；
将所述阵列基板与所述彩膜基板对位，并通过框胶进行贴合，以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间，所述容纳空间的所述胶框上设置有一液晶注入孔；
通过所述液晶注入孔向所述容纳空间内注入液晶，并将所述液晶注入孔密封，以形成多个液晶盒及至少一个所述测试TFT单元；
对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割，以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫；以及
在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附，以形成液晶面板。
优选地，形成所述测试TFT单元的TFT，位于所述液晶面板的靠近所述测试接口的一侧。
优选地，所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
优选地，所述源极测试垫、所述漏极测试垫、所述栅极测试垫的制备步骤分别为：将所述源极引线、所述漏极引线、以及所述栅极引线的一端各连接一金属薄片。
优选地，将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫连接于测试设备，并根据测试结果对所述液晶面板的质量进行评估。
 有益效果
相对于现有技术，本发明的液晶面板及其制备方法，通过对测试TFT单元的设计，实现对TFT在液晶盒中的电性的测量。
 附图说明
图1是本发明中实施例一中液晶面板的阵列基板示意图。
图2是本发明中实施例一中液晶面板的测试TFT单元的截面示意图。
图3是本发明中实施例二中液晶面板的制备方法示意图。
 本发明的最佳实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
实施例一
请参阅图1，为本发明实施例提供的液晶面板的示意图。所述的液晶面板包括多个液晶盒10、以及至少一个测试薄膜晶体管（TFT）单元20、以及至少一组由源极测试垫31、漏极测试垫32、栅极测试垫33构成的测试接口。
其中，所述源极测试垫31、漏极测试垫32、栅极测试垫33皆为金属薄片，所构成的测试接口用于连接测试装置（未标示）。
液晶盒10，由阵列基板、彩膜基板、及框胶将TFT密封并注入液晶而形成。
请同时参阅图1与图2，测试TFT单元20，包括：设置源极26、漏极27、栅极25的TFT；围绕TFT并连接阵列基板与彩膜基板的框胶24；一端连接所述TFT的栅极25、另一端穿过所述框胶24连接所述栅极测试垫33的栅极测试引线23；一端连接所述TFT的源极26、另一端穿过所述框胶24连接所述源极测试垫31的源极测试引线21；一端连接所述TFT的漏极27、另一端穿过所述框胶24连接所述漏极测试垫32的漏极测试引线22。
可以理解的是，上述测试TFT单元20，相当于在在形成阵列基板1时，将部分的TFT的漏极、源极和栅极中分别引出三条测试引线（21、22、23），分别连接于漏极32与漏极测试垫27、源极31与源极测试垫26、栅极33与栅极测试垫25。
所述选择部分的TFT，可以是在阵列基板的外侧选择一排或每隔预设阈值进行TFT的选择。如在靠近上述测试垫（31、32、33）的一侧，每隔5个选择1个作为测试TFT单元20的TFT。
如图2所示的图1中A-A’向截面的示意图。其中，TFT生成于所述阵列基板1上。其中栅极25的金属上依次覆盖有栅极绝缘层251（一般采用氮化硅层）、非晶硅半导体层252（a-Si:H）和掺杂型硅半导体253（n+ a-Si:H），源极26金属和漏极27金属设置在掺杂型非晶硅半导体253上。源极26与漏极27通常采用SD金属，且其上涂布绝缘保护层261与271（PV SiNx）。
将所述阵列基板1与所述彩膜基板2之间保留预设的间隙，并通过框胶24进行密封固定并保留液晶流入口；通过所述液晶流入口注入液晶28，并通过所述框胶完成密封；可以理解的是，框胶24围绕在TFT外围，而液晶分子28充溢在TFT的周围，用于模拟液晶盒内的环境。
所述测试TFT单元20中的TFT与所述液晶盒10中的TFT一同生长形成。因此，对测试TFT单元20中进行电性测量，即可得到其他液晶盒10的电性测量值。
可以理解的是：在进行本实施例中的液晶面板的设计时，通常将所述测试TFT单元20设置于所述液晶面板靠近三极测试垫（31、32、33）的一侧便于测量。而且为了减小尺寸，也可以在完成测量后，将上述测量TFT单元20切割掉。当然，保留亦可。
实施例二
如图3所示，为一种易测量的液晶面板的生成过程。用于生成实施例1中的液晶面板。
在步骤S301中，形成阵列基板。其中，阵列基板上包括：包括多个薄膜晶体管（TFT）、以及源极测试垫、漏极测试垫、栅极测试垫。
其中，至少一个TFT用于形成测试TFT单元，即，额外需要在TFT的栅极、漏极、及源极上连出三根测试引线。分别是：一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线；一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线；一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线。
在步骤302中，形成彩膜基板。由于此步骤与传统工艺相同，此处不再赘述。在步骤303中，将所述阵列基板与所述彩膜基板对位，并通过框胶进行贴合，以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间。
可以理解的是：在将所述阵列基板与所述彩膜基板进行对位时，应预留一定的空隙以便形成容纳空间。此外，所述容纳空间的所述胶框上设置有一液晶注入孔。
在步骤S304中，向所述容纳空间内注入液晶，以形成多个液晶盒及至少一个所述测试TFT单元。
可以理解的是：向容纳空间注入液晶的方式，既可以是通过密封时预留的液晶注入口，也可以是将所述的容纳空间切断后再注入。此外，完成液晶的注入后，应将注入口进行密封。
在步骤S305中，对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割，以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫以便进行TFT测试。
可以理解的是：测试时，将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫分别连接于测试设备，并根据所述测试设备所产生的测试结果对所述液晶面板的质量进行评估。
在步骤S306中，在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附，以形成液晶面板。
传统的TFT电性测量，一般是在阵列基板形成之后（即实施例2中步骤S301中）进行的，但实际上在完成液晶盒盒工艺后，其电性或称沟道性能会受到影响，因此在这一步骤中进行测量不够准确。
而本发明通过将部分的液晶盒在阵列基板制成时，增加了三极的测试引线，可以在完成液晶盒时，完全模拟液晶盒内的场景进行测量，保证了数据的准确性。
此外，液晶面板及其制备方法，还具有工艺简单、不会增加成本等优点。为了节约面积，在完成测试后，还可以切除测试TFT单元。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通测试人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (13)

  1. 一种液晶面板，其中，包括至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口、多个液晶盒、以及设置于靠近所述测试接口的至少一个测试TFT单元、其中，所述测试TFT单元包括：
    设置源极、漏极、栅极的TFT；
    围绕TFT并连接阵列基板与彩膜基板的框胶；
    一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线；
    一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线；
    一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线；以及
    设置在所述阵列基板与所述彩膜基板之间液晶分子，用于模拟液晶盒内的环境。
  2. 根据权利要求1所述的液晶面板，其中，所述测试TFT单元与所述液晶盒一同生长形成。
  3. 根据权利要求1所述的液晶面板，其中，所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
  4. 一种液晶面板，其中，包括多个液晶盒、至少一个测试TFT单元、源极测试垫、漏极测试垫、以及栅极测试垫，其中，所述测试TFT单元包括：
    设置源极、漏极、栅极的TFT；
    围绕TFT并连接阵列基板与彩膜基板的框胶；
    一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线；
    一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线；以及
    一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线。
  5. 根据权利要求4所述的液晶面板，其中，所述测试TFT单元设置于所述液晶面板的靠近所述源极测试垫、漏极测试垫、栅极测试垫的一侧。
  6. 根据权利要求4所述的液晶面板，其中，所述测试TFT单元还包括设置在所述阵列基板与所述彩膜基板之间液晶分子，用于模拟液晶盒内的环境。
  7. 根据权利要求6所述的液晶面板，其中，所述测试TFT单元与所述液晶盒一同生长形成。
  8. 根据权利要求4所述的液晶面板，其中，所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
  9. 一种液晶面板的制备方法，其中，包括如下步骤：
    制备阵列基板，所述阵列基板上包括：设置源极、漏极、栅极的TFT、以及至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口；其中，至少一个TFT用于形成测试TFT单元，所述测试TFT单元包括：一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线；一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线；一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线；
    制备彩膜基板；
    将所述阵列基板与所述彩膜基板对位，并通过框胶进行贴合，以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间，所述容纳空间的所述胶框上设置有一液晶注入孔；
    通过所述液晶注入孔向所述容纳空间内注入液晶，并将所述液晶注入孔密封，以形成多个液晶盒及至少一个所述测试TFT单元；
    对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割，以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫；以及
    在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附，以形成液晶面板。
  10. 根据权利要求9所述的液晶面板的制备方法，其中，形成所述测试TFT单元的TFT，位于所述液晶面板的靠近所述测试接口的一侧。
  11. 根据权利要求9所述的液晶面板的制备方法，其中，所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
  12. 根据权利要求9所述液晶面板的制备方法，其中，所述源极测试垫、所述漏极测试垫、所述栅极测试垫的制备步骤分别为：将所述源极引线、所述漏极引线、以及所述栅极引线的一端各连接一金属薄片。
  13. 根据权利要求9所述液晶面板的制备方法，其中，将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫连接于测试设备，并根据所述测试设备所产生的测试结果对所述液晶面板的质量进行评估。
PCT/CN2014/088816 2014-07-16 2014-10-17 液晶面板及其制备方法 Ceased WO2016008223A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/410,391 US9638943B2 (en) 2014-07-16 2014-10-17 LCD panel and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410339205.2 2014-07-16
CN201410339205.2A CN104111549A (zh) 2014-07-16 2014-07-16 液晶面板及其制备方法

Publications (1)

Publication Number Publication Date
WO2016008223A1 true WO2016008223A1 (zh) 2016-01-21

Family

ID=51708389

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/088816 Ceased WO2016008223A1 (zh) 2014-07-16 2014-10-17 液晶面板及其制备方法

Country Status (3)

Country Link
US (1) US9638943B2 (zh)
CN (1) CN104111549A (zh)
WO (1) WO2016008223A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106125431B (zh) * 2016-08-26 2019-11-22 武汉华星光电技术有限公司 用于液晶面板的阵列基板、液晶面板及液晶显示器
CN106292005A (zh) * 2016-08-31 2017-01-04 深圳市华星光电技术有限公司 一种液晶盒的制作方法
CN107068024B (zh) * 2017-03-14 2021-01-22 惠科股份有限公司 一种显示装置的测试方法及一种显示装置
CN109239951A (zh) * 2018-10-08 2019-01-18 惠科股份有限公司 一种显示面板的制作方法及显示面板
CN117270245A (zh) * 2023-09-28 2023-12-22 京东方科技集团股份有限公司 显示基板、显示装置和测试设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235197A (ja) * 1999-02-16 2000-08-29 Matsushita Electric Ind Co Ltd 液晶表示装置用アクティブマトリクスアレイの検査方法、および液晶表示装置用アクティブマトリクスアレイの検査装置、ならびに液晶表示装置の製造方法
JP2002122882A (ja) * 2000-10-16 2002-04-26 Matsushita Electric Ind Co Ltd 薄膜トランジスタ液晶表示装置および画像表示装置
JP2009237587A (ja) * 1997-10-14 2009-10-15 Samsung Electronics Co Ltd 液晶表示装置用基板、液晶表示装置及びその製造方法
CN102487042A (zh) * 2010-12-03 2012-06-06 北京京东方光电科技有限公司 阵列基板及其制造方法和检测方法、液晶面板
CN103730384A (zh) * 2013-12-13 2014-04-16 深圳市华星光电技术有限公司 一种tft电性量测方法及装置
CN103761935A (zh) * 2014-01-21 2014-04-30 深圳市华星光电技术有限公司 显示面板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188453B1 (en) * 1997-09-30 2001-02-13 Sanyo Electric Co., Ltd. Display apparatus having test elements under or bounded by the sealant
TW457690B (en) * 1999-08-31 2001-10-01 Fujitsu Ltd Liquid crystal display
KR100769160B1 (ko) * 2000-12-29 2007-10-23 엘지.필립스 엘시디 주식회사 액정표시장치의 테스트 패드
KR100671640B1 (ko) * 2004-06-24 2007-01-18 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법
KR101448006B1 (ko) * 2008-02-14 2014-10-13 삼성디스플레이 주식회사 액정 표시 장치
CN101738770B (zh) * 2009-12-28 2012-04-25 友达光电（苏州）有限公司 一种液晶显示面板及其触控侦测方法
CN201780437U (zh) * 2010-09-20 2011-03-30 华映光电股份有限公司 主动组件数组基板以及液晶面板
CN103217840B (zh) * 2013-04-18 2015-09-16 合肥京东方光电科技有限公司 一种阵列基板、制备方法以及液晶显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009237587A (ja) * 1997-10-14 2009-10-15 Samsung Electronics Co Ltd 液晶表示装置用基板、液晶表示装置及びその製造方法
JP2000235197A (ja) * 1999-02-16 2000-08-29 Matsushita Electric Ind Co Ltd 液晶表示装置用アクティブマトリクスアレイの検査方法、および液晶表示装置用アクティブマトリクスアレイの検査装置、ならびに液晶表示装置の製造方法
JP2002122882A (ja) * 2000-10-16 2002-04-26 Matsushita Electric Ind Co Ltd 薄膜トランジスタ液晶表示装置および画像表示装置
CN102487042A (zh) * 2010-12-03 2012-06-06 北京京东方光电科技有限公司 阵列基板及其制造方法和检测方法、液晶面板
CN103730384A (zh) * 2013-12-13 2014-04-16 深圳市华星光电技术有限公司 一种tft电性量测方法及装置
CN103761935A (zh) * 2014-01-21 2014-04-30 深圳市华星光电技术有限公司 显示面板

Also Published As

Publication number Publication date
US20160252757A1 (en) 2016-09-01
US9638943B2 (en) 2017-05-02
CN104111549A (zh) 2014-10-22

Similar Documents

Publication Publication Date Title
WO2016008223A1 (zh) 液晶面板及其制备方法
WO2014201729A1 (zh) 一种显示面板、显示面板的检测线路及其检测方法
WO2014019248A1 (zh) 一种检测线路及液晶显示面板的制作方法
WO2013155757A1 (zh) 液晶显示面板配线区线路结构及液晶显示面板测试方法
WO2013004041A1 (zh) 一种适用于psva与阵列的测试电路
WO2013174046A1 (zh) 液晶显示面板
WO2018133134A1 (zh) Coa基板及液晶显示面板
WO2016070458A1 (zh) 液晶显示面板及其栅极驱动电路
WO2019085067A1 (zh) 液晶显示面板及其制备方法
WO2018006479A1 (zh) 阵列基板及其制作方法、以及液晶显示面板
WO2016109995A1 (zh) 扫描驱动电路及其或非门逻辑运算电路
WO2014112705A1 (en) Image sensor for x-ray and method of manufacturing the same
WO2016106802A1 (zh) 用于液晶显示装置的goa电路
WO2018176562A1 (zh) 液晶显示面板及液晶显示装置
WO2017041330A1 (zh) 液晶显示面板及其驱动电路、制造方法
WO2017071589A1 (zh) 电池均衡电路的测试装置及方法
WO2017118073A1 (zh) 阵列基板及其制备方法和显示装置
WO2020220531A1 (zh) 一种阵列基板行驱动电路及显示面板
CN102176215B (zh) 一种soi场效应晶体管spice模型系列的建模方法
WO2017088230A1 (zh) Coa基板、液晶显示面板及液晶显示装置
WO2016029517A1 (zh) 薄膜晶体管阵列基板及其像素暗点化处理方法
WO2018148997A1 (zh) 一种阵列基板及其制作方法
WO2016070401A1 (zh) 曲面显示面板及曲面显示装置
WO2018176565A1 (zh) 一种液晶显示面板及装置
WO2018152874A1 (zh) 一种阵列基板及阵列基板的制作方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14410391

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14897793

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14897793

Country of ref document: EP

Kind code of ref document: A1