WO2016006840A1 - Transparent electrode assembly - Google Patents

Transparent electrode assembly Download PDF

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Publication number
WO2016006840A1
WO2016006840A1 PCT/KR2015/006308 KR2015006308W WO2016006840A1 WO 2016006840 A1 WO2016006840 A1 WO 2016006840A1 KR 2015006308 W KR2015006308 W KR 2015006308W WO 2016006840 A1 WO2016006840 A1 WO 2016006840A1
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WIPO (PCT)
Prior art keywords
transparent electrode
polysiloxane
layer
based polymer
polymer layer
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PCT/KR2015/006308
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French (fr)
Korean (ko)
Inventor
이정열
배민영
이승준
변자훈
안민석
차영철
홍우성
박성연
정재훈
김동민
Original Assignee
주식회사 동진쎄미켐
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Priority to CN201580037095.7A priority Critical patent/CN106489182B/en
Publication of WO2016006840A1 publication Critical patent/WO2016006840A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Definitions

  • the present invention relates to a transparent electrode composite.
  • the transparent electrode film is defined as a thin film which is transparent to visible light and is electrically conductive, and is used in various fields such as a plasma display panel, a liquid crystal display device, a light emitting diode device, an organic light emitting device, a touch panel, and a solar cell. .
  • a method of manufacturing an electrode having a crystal pattern formed by covering a dry film solder resist on a substrate such as a PET film, and proceeding in the order of exposure, development, and etching is widely used.
  • dry film solder resist there was a limit that it is difficult to realize a line width of less than 40um. Accordingly, in order to remove the limitation on the implementation of the line width, a photoresist is applied on the conductive substrate, and the transparent electrode film is exposed and developed. The method of preparation was also used.
  • the transparent electrode film manufactured as described above forms a predetermined protective layer between the conductive substrate and the photoresist layer, and has a low resistance value while having a high bonding strength that the previously known protective layer has on the conductive substrate and the porter resist layer. It should also have low interfacial resistance between neighboring layers.
  • the present invention has a high bonding force between the layers, but also has a low sheet resistance and interfacial resistance, and has a high degree of integration through a simplified step, or It is to provide a transparent electrode composite that can form an ultra-fine pattern. [Measures of problem]
  • a transparent electrode composite may be provided.
  • a transparent electrode composite according to a specific embodiment of the present invention will be described in detail.
  • the present inventors experimented through the sol-gel reaction that the polysiloxane-based polymer layer formed on the transparent electrode layer has high hydrophobicity and can secure high coating property and adhesion even to the photosensitive resin layer without a separate post-treatment process. Confirmed through and completed the invention.
  • a sol-gel reaction solution containing a siloxane monomer on the transparent electrode and reacting or drying at a temperature of 50 ° C or more, or 1 CX C or more, it is possible to form a polysiloxane polymer with a hydrophobic surface,
  • a polysiloxane-based polymer layer may have a high coating property and adhesion to the photosensitive polymer resin composition. Accordingly, a finer pattern can be easily formed in the process of exposing and developing the photosensitive resin layer formed from the photosensitive polymer resin composition.
  • the polysiloxane-based polymer layer may have a contact angle with respect to water of 60 ° or more, or 65 ° to 90 ° .
  • the polysiloxane-based polymer layer is coated with a sol-gel reaction solution containing a siloxane monomer on the transparent electrode and 50 ° C or more, or ioo ° c or more, 5 (rc to 2 (xrc).
  • the polysiloxane-based polymer layer may be formed by reacting or drying at a temperature of the alkyloxy silane monomer, the amino silane monomer, the vinyl silane monomer, the epoxy silane monomer, the methacryloxy silane monomer, the isocyanate silane monomer, and the like. Consisting of fluorine silane monomer It may comprise one polymer or two or more copolymers selected from the group.
  • the polysiloxane-based polymer layer may be tetraethyloxysilane, vinyltrieoxysilane, vinyltrimethoxysilane, vinyltris ( ⁇ -methoxyethoxy) silane, methacryloxypropyltrimethoxysilane, ⁇ (3,4-epoxycyclonucleosilane) ethyltrimethoxysilane, glycidoxypropyltrimethoxysilane, mercaptopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ - ⁇ -(aminoethyl)- ⁇ -aminopropyltrimethoxysilane, ⁇ -euraidpropyltriethoxysilane, phenyltriethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, polyethylene oxide modified silane monomer, polymethylethoxysilane,
  • the polysiloxane-based polymer layer is 60 to 90 weight of tetraethyloxysilane and vinyl trieoxysilane, vinyl Trimethoxysilane, Vinyltris ( ⁇ -Methoxyethoxy) silane, ⁇ -methacryloxypropyltrimethicsilane, ⁇ - (3,4-epoxycyclonucleosilane) ethyltrimethoxysilane, VII-glycidoxy Propyl trimethoxysilane, mercaptopropyl trimethoxysilane, aminopropyl triethoxysilane, ⁇ - ⁇ -
  • the sheet resistance of the polysiloxane-based polymer layer may increase significantly.
  • the content of tetraethyloxysilane in the monomer used in the synthesis of the copolymer contained in the polysiloxane-based polymer layer is less than 60% by weight, the sheet resistance of the polysiloxane-based polymer layer may increase significantly.
  • the density of the polysiloxane-based polymer layer may be excessively high or surface cracking may occur, and moisture resistance may be greatly reduced.
  • the transparent electrode composite includes the above-mentioned polysiloxane-based polymer layer Therefore, high coating property and adhesion can be maintained without additional hydrophobic fixation before forming the photosensitive resin layer, and thus a finer pattern can be formed on the photosensitive resin layer.
  • the polysiloxane-based polymer layer may have a thickness of 0.050 to 0.300 zm, or 0.1 to 0.200.
  • the polysiloxane-based polymer layer may have a sheet resistance of 80 ⁇ / sq to 400 ⁇ / sq, or 150 ⁇ / sq to 280 ⁇ / sq.
  • the transparent electrode layer may include various materials known to be used for the transparent electrode, specifically, a conductive polymer, carbon nanotubes, graphene, silver nanowires (AgNw), copper nanoparticles, and indium tin oxide (Indium) Tin Oxide) and antimony tin oxide may include one or more compounds selected from the group consisting of.
  • a conductive polymer specifically, carbon nanotubes, graphene, silver nanowires (AgNw), copper nanoparticles, and indium tin oxide (Indium) Tin Oxide) and antimony tin oxide may include one or more compounds selected from the group consisting of.
  • the conductive polymer may be a polymer known to be used for a transparent electrode.
  • the conductive polymer may be a polyaniline-based polymer, a polypyrrole-based polymer, a polythiophene-based polymer, and derivatives thereof. It may include, and may specifically use PED0T: PSS [Poly (3, 4- et hy 1 ened i oxy thi ophene): Polystyrene sul fonate].
  • the transparent electrode layer may have a thickness of 0.20 // m to 3.00, or 0.30 ⁇ s to 1.0. If the thickness of the transparent electrode layer is too thin, the effective sheet resistance may also be greatly reduced, and the sheet resistance may be uneven. If the thickness of the transparent electrode layer is too thick, transparency or optical characteristics may be degraded.
  • the transparent electrode layer may have a sheet resistance of 80 ⁇ / sq to 400 ⁇ / sq, or 150 ⁇ / sq to 280 ⁇ / sq.
  • the photosensitive resin layer may be uniformly and firmly bonded on the polysiloxane-based polymer layer, thereby providing a finer pattern on the photosensitive resin layer. Can be formed.
  • the photosensitive resin layer may be used a photosensitive resin composition or photoresist composition commonly known, specifically, the photosensitive resin layer is a positive photoresist composition containing an alkali-soluble resin; Or including monomers or multimers and photoinitiators comprising one or more semi-active functional groups Negative photoresist composition; and preferably from positive photoresist composition.
  • the photosensitive resin layer is a positive photoresist composition containing an alkali-soluble resin; Or including monomers or multimers and photoinitiators comprising one or more semi-active functional groups Negative photoresist composition; and preferably from positive photoresist composition.
  • the photosensitive resin layer may have a thickness of 1 to zm, or 2 // m to 4 / zm. If the thickness of the photosensitive resin layer is too thin, staining or appearance damage may occur on the photosensitive resin layer and / or the polysilonic acid polymer layer during exposure, development, and etching, thereby causing a cloudy appearance. If the thickness of the photosensitive resin layer is too thick, exposure may not be easy and development may not occur sufficiently or mismatch of line width may occur.
  • the electrode film may further include a release film layer formed on the photosensitive resin layer.
  • the release film layer may be a polymer film or the like, which is commonly used in the transparent electrode film, and specifically, a silicone adhesive film, an acrylic adhesive film, a PE protective film, or the like may be used.
  • the electrode film may further include a base film layer formed on one surface of the transparent electrode layer to face the polysiloxane-based polymer layer.
  • the transparent electrode layer after the transparent electrode layer is formed on the base film layer, the transparent electrode layer, the polysiloxane-based polymer layer, and the photosensitive resin layer may be sequentially formed to form the transparent electrode composite.
  • the base film layer may be formed on the other surface of the transparent electrode layer to form the transparent electrode composite.
  • a conventionally known coating method or coating method may be used, and also commonly known pressing methods may be used.
  • a conventional coating method used in the art such as spray method, bar coating method, doctor blade method, coating method, dipping method may be applied.
  • a transparent electrode composite having high bonding force and low sheet resistance and interfacial resistance between each layer, and having a high integration degree or a micronized pattern can be formed through a simplified step can be provided.
  • the transparent electrode composite provides a transparent electrode structure including a photosensitive resin layer which is a photoactive layer, and serves as a buffer of the transparent electrode and the photosensitive resin layer.
  • a photosensitive resin layer which is a photoactive layer
  • Including a polysiloxane-based polymer layer can be exhibited its unique properties. In particular, high coating properties and adhesion can be maintained without additional hydrophobic fixation prior to coating of the photosensitive resin layer, thereby forming a finer pattern on the photosensitive resin layer.
  • FIG. 1 illustrates contact angles of water of the polysiloxane-based polymer layers obtained in Examples 1 and 2 and Comparative Example 1.
  • FIG. 1 illustrates contact angles of water of the polysiloxane-based polymer layers obtained in Examples 1 and 2 and Comparative Example 1.
  • Figure 2 shows the appearance of the pattern of Example 1 and Comparative Example 1 observed in Experimental Example 2.
  • PED0T PSS [Po 1 y (3, 4-et hy 1 ened i oxy thi ophene) Polystyrene sul fonate, solids wt%], IPA (isopropylene alcohol), MeOH (methane) and DMS0 (dimethylsulfoxide) was mixed at a weight ratio of 75: 15: 5: 5, and 500 parts of Dynol 607, a surface regulator, was added to the mixture and stirred.
  • the mixture was coated on a PET substrate using a bar coater, followed by hot air drying (110 ° C./60 seconds) to prepare an electrode layer having a thickness of 0.096.
  • the sheet resistance of the finally prepared electrode layer was 240Q / sq.
  • PED0T PSS [Po 1 (3, 4-et hy 1 ened i oxy thi ophene) Polystyrene sul fonate, solid content 0.35wt%], silver nanowire dispersion (lwt%, water), IPA (isopropylene alcohol) , DI water And EG (ethylene glycol) was mixed in a weight ratio of 28.5: 10: 10: 41.5: 10, and the surface control agent 3M FC-4330 was added to 500ppmw compared to the mixture and stirred.
  • TE0S tetraethyloxysilane
  • PTMS phenyltrimethoxysilane
  • 23.55 g of water, 54.95 g of IPA (isopropylene alcohol) and 1.4 g of acetic acid were mixed and reacted for 3 hours at 70 ° C.
  • 100 g of the gel reaction solution (solid content 7.8wt) was prepared and 500 g of the sol-gel reaction solution (solid content 1.56 wt3 ⁇ 4) was prepared by diluting the prepared sol-gel reaction solution and isopropylene alcohol at a weight ratio of 1: 4.
  • the sol-gel reaction solution (solid content 1.56 ⁇ %) was coated on the electrode layer obtained in Preparation Example 1 with a thickness of 11.4 kPa using a bar coater, and then dried for 10 minutes at 20 ° C.
  • a polysiloxane polymer layer (surface resistance: 260 Q / sq) having a thickness of mi was formed.
  • Dongjin Semicam photoresist (Posi tive Type) SJ-631 (10cP, solid content 23 ⁇ %) was applied to the polysiloxane-based polymer layer formed by using a bar coating, and dried at 120T for 1 minute to be about 2.62 thick The photosensitive resin layer was produced.
  • Example 2 Dongjin Semicam photoresist (Posi tive Type) SJ-631 (10cP, solid content 23 ⁇ %) was applied to the polysiloxane-based polymer layer formed by using a bar coating, and dried at 120T for 1 minute to be about 2.62 thick The photosensitive resin layer was produced.
  • the sol-gel reaction solution (solid content 1.44 ⁇ %) was coated on the electrode layer obtained in Preparation Example 1 with a thickness of 11.43 using a bar coater, and then hot air. After drying at 20 ° C. for 10 minutes under conditions, a polysiloxane-based polymer layer (surface resistance: 265Q / sq) having a thickness of 0.165 was formed.
  • Dongjin Semichem photoresist (Positive Type) SJ-631 (10cP, solid content 23 ⁇ ⁇ %) was applied to the polysiloxane-based polymer layer formed by using a bar coating, and dried at a temperature of 12 (C temperature for 1 minute to about 2.62 thick A photosensitive resin layer was prepared.
  • the polysiloxane sol-gel reaction solution (solid content 1.44 ⁇ %) prepared in Example 2 was coated on the electrode layer obtained in Preparation Example 2 to a thickness of 11.43 kPa using a bar coater, and then subjected to hot air conditions at 20 ° C. It dried for 10 minutes at and formed the polysiloxane-type polymer layer (surface resistance: 80Q / sq) of 0.165 thickness.
  • Dongjin Semichem photoresist (Positive Type) SJ-631 (10cP, solid content 23wt3 ⁇ 4) was applied to the polysiloxane-based polymer layer formed by using a bar coating, dried at 120 ° C for 1 minute to a thickness of about 2.62 / / ⁇ 1 The photosensitive resin layer was produced. Examples 4-6
  • the sol-gel reaction solution (solid content 1.4wt%) was coated on the electrode layer obtained in the preparation example using a bar coater at a thickness of 11.4 im, and then dried at a temperature of 20 ° C. for 10 minutes under hot air conditions.
  • a polysiloxane polymer layer (surface resistance: 256 Q / sq) having a thickness of 160 was formed.
  • Dongjin Semichem Photoresist (Posi tive Type) SJ-631 (10cP, solid content 23wt%) was applied to the polysiloxane-based polymer layer formed by using a bar coating, dried at 120 ° C for 1 minute to about 2.62 / zm
  • the photosensitive resin layer of thickness was produced.
  • the coating property and adhesion on the basis of whether or not the line width of the pattern is removed in the pattern formation process is represented by 0 when the pattern is maintained and X when removing the pattern shown in Table 1 below, It is described in Figure 2 below.
  • the electrode films of Examples 1 to 3 can be more easily and firmly combined with the photosensitive resin layer, including a polysiloxane-based polymer layer having a contact angle of 60 degrees or more, thereby improving coating properties and adhesion.
  • the castle can be secured.
  • the bonding force between the polysiloxane-based polymer layer and the photosensitive resin layer of the electrode film of Comparative Example 1 was not sufficient, so that the formed pattern did not adhere well or part of the shape was not maintained.

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Abstract

The present invention relates to a transparent electrode assembly comprising: a transparent electrode layer; a polysiloxane-based polymer layer formed on the transparent electrode layer and having a contact angle of 60° or greater with respect to water; and a photosensitive resin layer formed on the polysiloxane-based polymer layer.

Description

【명세서】  【Specification】
【발명의 명칭】  [Name of invention]
투명 전극 복합체  Transparent electrode composite
【관련 출원 (들)과의 상호 인용】  [Cross Citation with Related Application (s)]
본 출원은 2014— 07-08자 한국 특허 출원 게 10-2014-0085142호 에 기초한 우선권의 이익을 주장하며, 해당 한국 특허 출원의 문헌에 개시된 모든 내용은 본 명세서의 일부로서 포함된다.  This application claims the benefit of priority based on Korean Patent Application No. 10-2014-0085142 of 2014-07-08, and all contents disclosed in the literature of that Korean patent application are incorporated as part of this specification.
【기술분야】  Technical Field
본 발명은 투명 전극 복합체에 관한 것이다.  The present invention relates to a transparent electrode composite.
【발명의 배경이 되는 기술】  [Technique to become background of invention]
투명 전극 필름은 가시광선에 대해 투명하고 전기전도성이 있는 얇은 막으로 정의되며, 플라즈마 디스플레이패널, 액정 디스플레이소자, 발광다이오드소자, 유기전자발광소자, 터치패널, 태양전지 등과 같은 다양한 분야에 이용되고 있다.  The transparent electrode film is defined as a thin film which is transparent to visible light and is electrically conductive, and is used in various fields such as a plasma display panel, a liquid crystal display device, a light emitting diode device, an organic light emitting device, a touch panel, and a solar cell. .
이러한 투명 전극 필름의 제조에는, PET필름 등의 기재 상에 드라이 필름 솔더 레지스트를 을리고 노광, 현상 및 에칭의 순으로 공정을 진행하여 수정의 패턴이 형성된 전극을 제조하는 방법이 널리 사용되었다. 그러나, 드라이 필름 솔더 레지스를 사용하는 경우, 40um 이하의 선폭을 구현하기 힘든 한계가 있었으며, 이에 따라 선폭 구현에 제한을 해소하고자 전도성 기재 상에 포토 레지스트를 도포하고 노광 및 현상을 하여 투명 전극 필름을 제조하는 방법 또한 사용되었다.  In the production of such a transparent electrode film, a method of manufacturing an electrode having a crystal pattern formed by covering a dry film solder resist on a substrate such as a PET film, and proceeding in the order of exposure, development, and etching is widely used. However, in the case of using dry film solder resist, there was a limit that it is difficult to realize a line width of less than 40um. Accordingly, in order to remove the limitation on the implementation of the line width, a photoresist is applied on the conductive substrate, and the transparent electrode film is exposed and developed. The method of preparation was also used.
이와 같이 제조되는 투명 전극 필름은 상기 전도성 기재와 포토레지스트층 사이에 소정의 보호층을 형성하고 있는데, 이전에 알려진 보호층이 상기 전도성 기재 및 포터레지스트층에 대하여 갖는 결합력은 높으면서도 낮은 저항 값을 가져야 하며, 또한 이웃하는 층 간에서의 계면 저항 또한 낮은 수준이 될 수 있도록 해야 한다.  The transparent electrode film manufactured as described above forms a predetermined protective layer between the conductive substrate and the photoresist layer, and has a low resistance value while having a high bonding strength that the previously known protective layer has on the conductive substrate and the porter resist layer. It should also have low interfacial resistance between neighboring layers.
【발명의 내용】  [Content of invention]
【해결하고자 하는 과제】  Problem to be solved
본 발명은, 각 층간에 높은 결합력을 가지면서도 낮은 면저항 및 계면 저항을 가지며, 단순화된 단계를 통하여서도 높은 집적도를 갖거나 또는 극미세화된 패턴을 형성할 수 있는 투명 전극 복합체를 제공하기 위한 것이다. 【과제의 해결 수단】 The present invention has a high bonding force between the layers, but also has a low sheet resistance and interfacial resistance, and has a high degree of integration through a simplified step, or It is to provide a transparent electrode composite that can form an ultra-fine pattern. [Measures of problem]
본 명세서에서는, 전도성 고분자, 탄소 나노 튜브, 그래핀, 은 나노 와이어 (AgNw) , 구리 나노 입자, 산화 인듐 주석 ( Indium Tin Oxide) 및 산화 안티몬 주석 (Ant imony Tin oxide)으로 이루어진 군에서 선택된 1종 이상의 화합물을 포함하는 투명 전극층; 상기 투명 전극층 상에 형성되고, 물에 대한 접촉각이 60° 이상인 폴리실록산계 고분자층; 및 상기 폴리실록산계 고분자층 상에 형성된 감광성 수지충;을 포함하는, 투명 전극 복합체가 제공될 수 있다. 이하 발명의 구체적인 구현예에 따른 투명 전극 복합체에 관하여 보다 상세하게 설명하기로 한다. 본 발명자들은, 졸-겔 반웅을 통하여 투명 전극층 상에 형성되는 폴리실록산계 고분자층이 별도의 후처리 과정 없이도 높은 소수성을 가지며 감광성 수지층에 대해서도 높은 코팅성 및 부착성을 확보할 수 있다는 점을 실험을 통하여 확인하고 발명을 완성하였다. In the present specification, one kind selected from the group consisting of a conductive polymer, carbon nanotubes, graphene, silver nanowires (AgNw), copper nanoparticles, indium tin oxide, and antimony tin oxide Transparent electrode layer containing the above compound; A polysiloxane-based polymer layer formed on the transparent electrode layer and having a contact angle with respect to water of 60 ° or more; And a photosensitive resin layer formed on the polysiloxane-based polymer layer. A transparent electrode composite may be provided. Hereinafter, a transparent electrode composite according to a specific embodiment of the present invention will be described in detail. The present inventors experimented through the sol-gel reaction that the polysiloxane-based polymer layer formed on the transparent electrode layer has high hydrophobicity and can secure high coating property and adhesion even to the photosensitive resin layer without a separate post-treatment process. Confirmed through and completed the invention.
구체적으로, 상기 투명 전극 상에 실록산계 단량체를 포함한 졸-겔 반응용액을 도포하고 50°C이상, 또는 1CX C이상의 온도에서 반웅 또는 건조시킴으로서 소수성 표면을 갖는 폴리실록산계 고분자충을 형성할 수 있으며, 이러한 폴리실록산계 고분자층은 감광성 고분자 수지 조성물에 대하여 높은 코팅성 및 부착성을 가질 수 있다. 이에 따라, 상기 감광성 고분자 수지 조성물로부터 형성되는 감광성 수지층을 노광 및 현상하는 과정에서 보다 미세화된 패턴을 용이하게 형성할 수 있다. Specifically, by applying a sol-gel reaction solution containing a siloxane monomer on the transparent electrode and reacting or drying at a temperature of 50 ° C or more, or 1 CX C or more, it is possible to form a polysiloxane polymer with a hydrophobic surface, Such a polysiloxane-based polymer layer may have a high coating property and adhesion to the photosensitive polymer resin composition. Accordingly, a finer pattern can be easily formed in the process of exposing and developing the photosensitive resin layer formed from the photosensitive polymer resin composition.
구체적으로 상기 폴리실록산계 고분자층은 물에 대한 접촉각이 60° 이상, 또는 65° 내지 90° 일 수 있다. Specifically, the polysiloxane-based polymer layer may have a contact angle with respect to water of 60 ° or more, or 65 ° to 90 ° .
또한, 상술한 바와 같이, 상기 폴리실록산계 고분자층은 상기 투명 전극 상에 실록산계 단량체를 포함한 졸-겔 반응용액을 도포하고 50°C이상, 또는 ioo°c이상, 5(rc 내지 2(xrc 의 온도에서 반웅 또는 건조하여 형성될 수 있다. 상기 폴리실록산계 고분자층은 알킬옥시 실란계 단량체, 아미노 실란계 단량체, 비닐 실란계 단량체, 에폭시 실란계 단량체, 메타크릴옥시 실란계 단량체, 이소시아네이트 실란계 단량체 및 불소 실란계 단량체로 이루어진 군에서 선택된 1종의 중합체 또는 2종 이상의 공중합체를 포함할 수 있다. In addition, as described above, the polysiloxane-based polymer layer is coated with a sol-gel reaction solution containing a siloxane monomer on the transparent electrode and 50 ° C or more, or ioo ° c or more, 5 (rc to 2 (xrc The polysiloxane-based polymer layer may be formed by reacting or drying at a temperature of the alkyloxy silane monomer, the amino silane monomer, the vinyl silane monomer, the epoxy silane monomer, the methacryloxy silane monomer, the isocyanate silane monomer, and the like. Consisting of fluorine silane monomer It may comprise one polymer or two or more copolymers selected from the group.
구체적으로, 상기 폴리실록산계 고분자층은 테트라에틸옥시실란, 비닐트리에특시실란, 비닐트리메록시실란, 비닐트리스 ( β -메록시에톡시)실란, 메타크릴옥시프로필트리메록시실란, β -(3 , 4- 에폭시시클로핵실)에틸트리메록시실란, 글리시드옥시프로필트리메톡시실란, 머캅토프로필트리메록시실란, Υ -아미노프로필트리에톡시실란, Ν-β - (아미노에틸) - γ -아미노프로필트리메록시실란, γ -유레이드프로필트리에록시실란, 페닐트리에록시실란, 메틸트리에록시실란, 메틸트리메톡시실란, 폴리에틸렌옥사이드 변성 실란 단량체, 폴리메틸에록시실록산 및 핵사메틸디시라진으로 이루어진 군에서 선택된 1종의 중합체 또는 2종 이상의 공중합체를 포함할 수 있다. Specifically, the polysiloxane-based polymer layer may be tetraethyloxysilane, vinyltrieoxysilane, vinyltrimethoxysilane, vinyltris (β-methoxyethoxy) silane, methacryloxypropyltrimethoxysilane, β− (3,4-epoxycyclonucleosilane) ethyltrimethoxysilane, glycidoxypropyltrimethoxysilane, mercaptopropyltrimethoxysilane, Υ-aminopropyltriethoxysilane, Ν-β-(aminoethyl)- γ -aminopropyltrimethoxysilane, γ -euraidpropyltriethoxysilane, phenyltriethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, polyethylene oxide modified silane monomer, polymethylethoxysiloxane and nucleus yarn It may include one polymer or two or more copolymers selected from the group consisting of methyldisirazine.
상기 폴리실록산계 고분자층이 이웃하는 다른 층에 대하여 보다 높은 결합력 또는 접착력을 가지면서 낮은 면저항을 확보하기 위해서, 상기 폴리실록산계 고분자층은 테트라에틸옥시실란 60 내지 90중량 및 비닐트리에특시실란, 비닐트리메록시실란, 비닐트리스 ( β -메록시에록시)실란, Υ -메타크릴옥시프로필트리메특시실란, β -(3 , 4- 에폭시시클로핵실)에틸트리메특시실란, Υ -글리시드옥시프로필트리메특시실란, 머캅토프로필트리메특시실란, 아미노프로필트리에록시실란, Ν- β -In order to secure a low sheet resistance while the polysiloxane-based polymer layer has a higher bonding strength or adhesion to other neighboring layers, the polysiloxane-based polymer layer is 60 to 90 weight of tetraethyloxysilane and vinyl trieoxysilane, vinyl Trimethoxysilane, Vinyltris (β-Methoxyethoxy) silane, Υ -methacryloxypropyltrimethicsilane, β- (3,4-epoxycyclonucleosilane) ethyltrimethoxysilane, VII-glycidoxy Propyl trimethoxysilane, mercaptopropyl trimethoxysilane, aminopropyl triethoxysilane, Ν-β-
(아미노에틸) 아미노프로필트리메특시실란, 유레이드프로필트리에특시실란, 페닐트리에록시실란, 메틸트리에록시실란, 메틸트리메특시실란 폴리에틸렌옥사이드 변성 실란 단량체, 폴리메틸에톡시실록산 및 핵사메틸디시라진으로 이루어진 군에서 선택된 1종 이상의 화합물 10 내지(Aminoethyl) Aminopropyltrimethoxysilane, Euraid Propylene Trisilane, Phenyltriethoxysilane, Methyltriethoxysilane, Methyltrimethoxysilane Polyethyleneoxide Modified Silane Monomer, Polymethylethoxysiloxane and Nuclear Yarn 10 to 1 or more compounds selected from the group consisting of methyldisirazine
40중량 %; 간의 공중합체를 포함할 수 있다. 40 weight%; And hepatic copolymers.
상기 폴리실록산계 고분자층에 포함되는 공중합체의 합성에 사용되는 단량체 중 테트라에틸옥시실란의 함량이 60중량 %미만이면 상기 폴리실록산계 고분자층의 면저항이 크게 증가할 수 있다. 또한, 상기 폴리실록산계 고분자층에 포함되는 공중합체의 합성에 사용되는 단량체 중 테트라에틸옥시실란의 함량이 If the content of the tetraethyloxysilane in the monomer used in the synthesis of the copolymer included in the polysiloxane-based polymer layer is less than 60% by weight, the sheet resistance of the polysiloxane-based polymer layer may increase significantly. In addition, the content of tetraethyloxysilane in the monomer used in the synthesis of the copolymer contained in the polysiloxane-based polymer layer
90중량 %초과이면, 상기 폴리실록산계 고분자층의 밀도가 과다하게 높아지거나 표면의 깨지는 현상이 발생할 수 있고 내수분성이 크게 저하될 수 있다. If it exceeds 90% by weight, the density of the polysiloxane-based polymer layer may be excessively high or surface cracking may occur, and moisture resistance may be greatly reduced.
상기 투명 전극 복합체가 상술한 상기 폴리실록산계 고분자층을 포함함에 따라서, 상기 감광성 수지층 형성 전에 추가적인 소수성 부여 고정이 없이도 높은 코팅성 및 부착성을 유지할 수 있으며, 이에 따라 상기 감광성 수지층에 보다 미세화된 패턴을 형성할 수 있다. Wherein the transparent electrode composite includes the above-mentioned polysiloxane-based polymer layer Therefore, high coating property and adhesion can be maintained without additional hydrophobic fixation before forming the photosensitive resin layer, and thus a finer pattern can be formed on the photosensitive resin layer.
상기 폴리실록산계 고분자층은 0.050 내지 0.300 zm, 또는 0. 120 내지 0.200 의 두께를 가질 수 있다. 또한, 상기 폴리실록산계 고분자층은 80 Ω /sq 내지 400 Ω /sq , 또는 150 Ω /sq 내지 280 Ω /sq의 면저항을 가질 수 있다.  The polysiloxane-based polymer layer may have a thickness of 0.050 to 0.300 zm, or 0.1 to 0.200. In addition, the polysiloxane-based polymer layer may have a sheet resistance of 80 Ω / sq to 400 Ω / sq, or 150 Ω / sq to 280 Ω / sq.
한편, 상기 투명 전극층은 투명 전극에 사용될 수 있는 것으로 알려진 다양한 재료를 포함할 수 있는데, 구체적으로 전도성 고분자, 탄소 나노 튜브, 그래핀, 은 나노 와이어 (AgNw) , 구리 나노 입자, 산화 인듐 주석 ( Indium Tin Oxide) 및 산화 안티몬 주석 (Ant imony Tin oxide)으로 이루어진 군에서 선택된 1종 이상의 화합물을 포함할 수 있다.  Meanwhile, the transparent electrode layer may include various materials known to be used for the transparent electrode, specifically, a conductive polymer, carbon nanotubes, graphene, silver nanowires (AgNw), copper nanoparticles, and indium tin oxide (Indium) Tin Oxide) and antimony tin oxide may include one or more compounds selected from the group consisting of.
상기 전도성 고분자로는 투명 전극에 사용될 수 있는 것으로 알려진 고분자를 사용할 수 있으며, 구체적으로 상기 전도성 고분자는 폴리아닐린계 고분자, 폴리피롤계 고분자, 폴리티오펜계 고분자 및 이들의 유도체로 이루어진 군에서 선택된 1종 이상을 포함할 수 있고, 구체적으로 PED0T:PSS[Poly(3 , 4- e t hy 1 ened i oxy t h i ophene ) : Polystyrene sul fonate]을 사용할 수도 있다.  The conductive polymer may be a polymer known to be used for a transparent electrode. Specifically, the conductive polymer may be a polyaniline-based polymer, a polypyrrole-based polymer, a polythiophene-based polymer, and derivatives thereof. It may include, and may specifically use PED0T: PSS [Poly (3, 4- et hy 1 ened i oxy thi ophene): Polystyrene sul fonate].
상기 투명 전극층은 0.20//m 내지 3.00 , 또는 0.30卿 내지 1.0,의 두께를 가질 수 있다. 상기 투명 전극층의 두께가 너무 얇아지면 유효 면저항 또한 크게 저하되어 면저항이 불균일해질 수 있고, 상기 투명 전극층의 두께가 너무 두꺼워지면 투명도나 광학 특성이 저하될 수 있다.  The transparent electrode layer may have a thickness of 0.20 // m to 3.00, or 0.30 μs to 1.0. If the thickness of the transparent electrode layer is too thin, the effective sheet resistance may also be greatly reduced, and the sheet resistance may be uneven. If the thickness of the transparent electrode layer is too thick, transparency or optical characteristics may be degraded.
또한, 상기 투명 전극층은 80 Ω /sq 내지 400 Ω /sq, 또는 150 Ω /sq 내지 280 Ω /sq의 면저항을 가질 수 있다.  In addition, the transparent electrode layer may have a sheet resistance of 80 Ω / sq to 400 Ω / sq, or 150 Ω / sq to 280 Ω / sq.
상술한 바와 같이, 상기 폴리실록산계 고분자층의 고유의 특성에 따라서, 상기 감광성 수지층은 상기 폴리실록산계 고분자층 상에 균일하고 견고하게 결합될 수 있고, 이에 따라 상기 감광성 수지층에는 보다 미세화된 패턴을 형성할 수 있다.  As described above, according to the inherent characteristics of the polysiloxane-based polymer layer, the photosensitive resin layer may be uniformly and firmly bonded on the polysiloxane-based polymer layer, thereby providing a finer pattern on the photosensitive resin layer. Can be formed.
상기 감광성 수지층의 형성에는 통상적으로 알려진 감광성 수지 조성물 또는 포토레지스트 조성물을 사용할 수 있으며, 구체적으로 상기 감광성 수지층은 알카리 가용성 수지를 포함한 포지티브 포토레지스트 조성물; 또는 1이상의 반웅성 작용기를 포함한 단량체 또는 다량체 및 광개시제를 포함한 네가티브 포토레지스트 조성물;으로부터 형성될 수 있고, 바람직하게는 포지티브 포토레지스트 조성물로부터 형성될 수 있다. Formation of the photosensitive resin layer may be used a photosensitive resin composition or photoresist composition commonly known, specifically, the photosensitive resin layer is a positive photoresist composition containing an alkali-soluble resin; Or including monomers or multimers and photoinitiators comprising one or more semi-active functional groups Negative photoresist composition; and preferably from positive photoresist composition.
상기 감광성 수지층은 1 내지 zm , 또는 2//m 내지 4/zm의 두께를 가질 수 있다. 상기 감광성 수지층의 두께가 너무 얇으면, 노광, 현상 및 에칭 과정에서 상기 감광성 수지층 및 /또는 폴리실론산계 고분자층에 얼룩이나 외관 손상이 발생하여 백탁 현상이 나타날 수 있다. 상기 감광성 수지층의 두께가 너무 두꺼우면, 노광이 용이하지 않아서 현상이 충분히 일어나지 않거나 또는 선폭의 불일치가 발생할 수 있다.  The photosensitive resin layer may have a thickness of 1 to zm, or 2 // m to 4 / zm. If the thickness of the photosensitive resin layer is too thin, staining or appearance damage may occur on the photosensitive resin layer and / or the polysilonic acid polymer layer during exposure, development, and etching, thereby causing a cloudy appearance. If the thickness of the photosensitive resin layer is too thick, exposure may not be easy and development may not occur sufficiently or mismatch of line width may occur.
한편, 상기 전극 필름은 상기 감광성 수지층 상에 형성된 이형 필름층을 더 포함할 수 있다. 상기 이형 필름층은 투명 전극 필름에 통상적으로 사용되는 것으로 알려진 고분자 필름 등을 사용할 수 있으며, 구체적으로 실리콘 점착 필름, 아크릴 점착 필름 및 PE보호 필름 등을 사용할 수 있다.  On the other hand, the electrode film may further include a release film layer formed on the photosensitive resin layer. The release film layer may be a polymer film or the like, which is commonly used in the transparent electrode film, and specifically, a silicone adhesive film, an acrylic adhesive film, a PE protective film, or the like may be used.
한편, 상기 전극 필름은 상기 폴리실록산계 고분자층과 대향하도록 상기 투명 전극층의 일면에 형성된 기재 필름층을 더 포함할 수 있다.  On the other hand, the electrode film may further include a base film layer formed on one surface of the transparent electrode layer to face the polysiloxane-based polymer layer.
즉, 상기 기재 필름층에 상기 투명 전극층을 형성한 이후에 상기 투명 전극층, 폴리실록산계 고분자층 및 감광성 수지층을 순차적으로 형성하여 상기 투명 전극 복합체를 형성할 수 있다. 또한, 상기 투명 전극층 상에 폴리실록산계 고분자층 및 감광성 수지층을 순차적으로 형성한 이후에 상기 기재 필름층을 상기 투명 전극층의 다른 일면에 형성하여 상기 투명 전극 복합체를 형성할 수 있다.  That is, after the transparent electrode layer is formed on the base film layer, the transparent electrode layer, the polysiloxane-based polymer layer, and the photosensitive resin layer may be sequentially formed to form the transparent electrode composite. In addition, after the polysiloxane-based polymer layer and the photosensitive resin layer are sequentially formed on the transparent electrode layer, the base film layer may be formed on the other surface of the transparent electrode layer to form the transparent electrode composite.
상기 투명 전극 복합체의 제조 과정에서는 통상적으로 알려진 도포 방법 또는 코팅 방법이 사용될 수 있으며, 또한 통상적으로 알려진 압착 방법 등을 사용할 수 있다. 상기 코팅 방법으로는 스프레이법, 바 코팅법, 닥터 블레이드법, 를 코팅법, 디핑법 등 당 업계에서 사용되는 통상의 코팅 방법이 적용될 수 있다. 【발명의 효과】  In the manufacturing process of the transparent electrode composite, a conventionally known coating method or coating method may be used, and also commonly known pressing methods may be used. As the coating method, a conventional coating method used in the art, such as spray method, bar coating method, doctor blade method, coating method, dipping method may be applied. 【Effects of the Invention】
본 발명에 따르면, 각 층간에 높은 결합력을 가지면서도 낮은 면저항 및 계면 저항을 가지며, 단순화된 단계를 통하여서도 높은 집적도를 갖거나 또는 극미세화된 패턴을 형성할 수 있는 투명 전극 복합체가 제공될 수 있다.  According to the present invention, a transparent electrode composite having high bonding force and low sheet resistance and interfacial resistance between each layer, and having a high integration degree or a micronized pattern can be formed through a simplified step can be provided. .
상기 투명 전극 복합체는, 광활성층인 감광성 수지층을 포함하는 투명 전극 구조를 제공하며, 상기 투명 전극과 감광성 수지층 버퍼 역할을 하는 상기 폴리실록산계 고분자층을 포함하여 그 고유의 특성을 발휘할 수 있게 한다. 특히, 상기 감광성 수지층의 코팅 이전에 추가적인 소수성 부여 고정이 없이도 높은 코팅성 및 부착성을 유지할 수 있으며, 이에 따라 상기 감광성 수지층에 보다 미세화된 패턴을 형성할 수 있다. The transparent electrode composite provides a transparent electrode structure including a photosensitive resin layer which is a photoactive layer, and serves as a buffer of the transparent electrode and the photosensitive resin layer. Including a polysiloxane-based polymer layer can be exhibited its unique properties. In particular, high coating properties and adhesion can be maintained without additional hydrophobic fixation prior to coating of the photosensitive resin layer, thereby forming a finer pattern on the photosensitive resin layer.
【도면의 간단한 설명】  [Brief Description of Drawings]
도 1은 실시예 1 및 2와 비교예 1에 얻어진 폴리실록산계 고분자층의 물에 대한 접촉각을 나타낸 것이다.  1 illustrates contact angles of water of the polysiloxane-based polymer layers obtained in Examples 1 and 2 and Comparative Example 1. FIG.
도 2는 실험예 2에서 관찰한 실시예 1 및 비교예 1의 패턴의 외관을 나타낸 것이다.  Figure 2 shows the appearance of the pattern of Example 1 and Comparative Example 1 observed in Experimental Example 2.
【발명을 실시하기 위한 구체적인 내용】  [Specific contents to carry out invention]
발명을 하기의 실시예에서 보다 상세하게 설명한다. 단, 하기의 실시예는 본 발명을 예시하는 것일 뿐, 본 발명의 내용이 하기의 실시예에 의하여 한정되는 것은 아니다. [제조예 1: 전극층의 제조]  The invention is explained in more detail in the following examples. However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited by the following examples. Production Example 1: Preparation of Electrode Layer
PED0T: PSS [ Po 1 y ( 3 , 4-e t hy 1 ened i oxy t h i ophene ) Polystyrene sul fonate, 고형분 lwt%], IPA (이소프로필렌 알코올), MeOH (메탄을) 및 DMS0 (다이메틸설폭사이드)를 75:15:5:5의 중량비로 흔합하고, 표면 조절제인 Dynol 607을 상기 흔합물 대비 500pp隱을 넣고 교반하였다.  PED0T : PSS [Po 1 y (3, 4-et hy 1 ened i oxy thi ophene) Polystyrene sul fonate, solids wt%], IPA (isopropylene alcohol), MeOH (methane) and DMS0 (dimethylsulfoxide) Was mixed at a weight ratio of 75: 15: 5: 5, and 500 parts of Dynol 607, a surface regulator, was added to the mixture and stirred.
상기 교반이 완료된 이후, 상기 흔합물을 PET 기재에 바 코터를 이용하여 코팅한 후, 열풍 건조 (110°C/ 60초)를 진행하여 0.096 의 두께의 전극층을 제조하였다. 최종 제조된 전극층의 면저항은 240Q/sq이었다. After the stirring was completed, the mixture was coated on a PET substrate using a bar coater, followed by hot air drying (110 ° C./60 seconds) to prepare an electrode layer having a thickness of 0.096. The sheet resistance of the finally prepared electrode layer was 240Q / sq.
[제조예 2: 전극층의 제조] Production Example 2: Preparation of Electrode Layer
PED0T: PSS [ Po 1 ( 3 , 4-e t hy 1 ened i oxy t h i ophene ) Polystyrene sul fonate, 고형분 0.35wt%], 은 나노 와이어 분산액 (lwt%, water), IPA (이소프로필렌 알코올), D.I water및 EG (에틸렌 글리콜)를 28.5: 10: 10:41.5: 10의 중량비로 흔합하고, 표면 조절제인 3M FC-4330 을 상기 흔합물 대비 500ppmw을 넣고 교반하였다.  PED0T : PSS [Po 1 (3, 4-et hy 1 ened i oxy thi ophene) Polystyrene sul fonate, solid content 0.35wt%], silver nanowire dispersion (lwt%, water), IPA (isopropylene alcohol) , DI water And EG (ethylene glycol) was mixed in a weight ratio of 28.5: 10: 10: 41.5: 10, and the surface control agent 3M FC-4330 was added to 500ppmw compared to the mixture and stirred.
상기 교반이 완료된 이후, 상기 흔합물을 PET 기재에 바 코터를 이용하여 코팅한 후, 열풍 건조 (1 C/ 60초)를 진행하여 0.055 의 두께의 전극층을 제조하였다. 최종 제조된 전극층의 면저항은 60Q /sq이었다. After the stirring is completed, the mixture using a bar coater on the PET substrate After coating, hot air drying (1 C / 60 seconds) was performed to prepare an electrode layer having a thickness of 0.055. The sheet resistance of the finally prepared electrode layer was 60Q / sq.
[실시예 및 비교예 : 전극 필름의 제조] [Examples and Comparative Examples: Preparation of the electrode film]
실시예 1  Example 1
(1) 폴리실록산계 고분자층의 형성  (1) Formation of Polysiloxane-based Polymer Layer
TE0S (테트라에틸옥시실란) 16.08 g, PTMS (페닐트리메록시실란) 4.02 g, 물 23.55 g, IPA (아이소프로필렌 알코올) 54.95 g, 아세트산 1.4 g를 흔합하여 70°C에서 3시간 반웅시켜서 졸-겔 반웅 용액의 lOOg (고형분 7.8wt 을 제조하고, 제조된 졸-겔 반웅 용액과 아이소프로필렌 알코을을 1 : 4의 중량비로 희석하여 졸-겔 반응 용액의 500g (고형분 1.56wt¾ 을 제조하였다. 16.08 g of TE0S (tetraethyloxysilane), 4.02 g of PTMS (phenyltrimethoxysilane), 23.55 g of water, 54.95 g of IPA (isopropylene alcohol) and 1.4 g of acetic acid were mixed and reacted for 3 hours at 70 ° C. 100 g of the gel reaction solution (solid content 7.8wt) was prepared and 500 g of the sol-gel reaction solution (solid content 1.56 wt¾) was prepared by diluting the prepared sol-gel reaction solution and isopropylene alcohol at a weight ratio of 1: 4.
상기 졸-겔 반응 용액 (고형분 1.56^%)을 상기 제조예 1에서 얻어진 전극층 상에 바 코터를 이용하여 11.4 皿의 두께로 코팅한 다음, 열풍 조건에세 20°C 은도에서 10분간 건조하여 0.178 mi의 두께의 폴리실록산계 고분자층 (면저항: 260Q /sq)을 형성하였다. The sol-gel reaction solution (solid content 1.56 ^%) was coated on the electrode layer obtained in Preparation Example 1 with a thickness of 11.4 kPa using a bar coater, and then dried for 10 minutes at 20 ° C. A polysiloxane polymer layer (surface resistance: 260 Q / sq) having a thickness of mi was formed.
(2) 감광성 수지층의 형성 (2) Formation of Photosensitive Resin Layer
동진쎄미캠 포토레지스트 (Posi t ive Type) SJ-631(10cP, 고형분 23^%)를 상기 형성된 폴리실록산계 고분자층 상에 바 코팅을 이용하여 도포하고, 120T 온도에서 1분간 건조하여 약 2.62 두께의 감광성 수지층을 제조하였다. 실시예 2  Dongjin Semicam photoresist (Posi tive Type) SJ-631 (10cP, solid content 23 ^%) was applied to the polysiloxane-based polymer layer formed by using a bar coating, and dried at 120T for 1 minute to be about 2.62 thick The photosensitive resin layer was produced. Example 2
( 1) 폴리실록산계 고분자층의 형성  (1) Formation of Polysiloxane-based Polymer Layer
TE0S (테트라에틸옥시실란) 16.08 g, VTMS (비닐트리메록시실란) 4.02 g, 물 23.55 g, IPA (아이소프로필렌 알코올) 54.95 g 및 아세트산 1.4 g 를 흔합하고 70°C에서 3시간 반응하여 졸-겔 반웅 용액의 lOOg (고형분 7.2 %)을 제조하고, 제조된 졸-겔 반웅 용액과 아이소프로필렌 알코올을 1 :4의 중량비로 희석하여 졸-겔 반웅 용액의 500g (고형분 1.44^%)을 제조하였다. 16.08 g of TE0S (tetraethyloxysilane), 4.02 g of VTMS (vinyltrimethoxysilane), 23.55 g of water, 54.95 g of IPA (isopropylene alcohol) and 1.4 g of acetic acid were mixed and reacted for 3 hours at 70 ° C. 100 g of a gel reaction solution (solid content 7.2%) was prepared, and 500 g (solid content of 1.44%) of a sol-gel reaction solution was prepared by diluting the prepared sol-gel reaction solution with isopropylene alcohol at a weight ratio of 1: 4. .
상기 졸-겔 반응 용액 (고형분 1.44^%)을 상기 제조예 1에서 얻어진 전극층 상에 바 코터를 이용하여 11.43 의 두께로 코팅한 다음, 열풍 조건에세 20°C 온도에서 10분간 건조하여 0.165 의 두께의 폴리실록산계 고분자층 (면저항: 265Q/sq)을 형성하였다. The sol-gel reaction solution (solid content 1.44 ^%) was coated on the electrode layer obtained in Preparation Example 1 with a thickness of 11.43 using a bar coater, and then hot air. After drying at 20 ° C. for 10 minutes under conditions, a polysiloxane-based polymer layer (surface resistance: 265Q / sq) having a thickness of 0.165 was formed.
(2) 감광성 수지층의 형성 (2) Formation of Photosensitive Resin Layer
동진쎄미켐 포토레지스트 (Positive Type) SJ-631(10cP, 고형분 23\^%)를 상기 형성된 폴리실록산계 고분자층 상에 바 코팅을 이용하여 도포하고, 12( C 온도에서 1분간 건조하여 약 2.62 두께의 감광성 수지층을 제조하였다. 실시예 3  Dongjin Semichem photoresist (Positive Type) SJ-631 (10cP, solid content 23 \ ^%) was applied to the polysiloxane-based polymer layer formed by using a bar coating, and dried at a temperature of 12 (C temperature for 1 minute to about 2.62 thick A photosensitive resin layer was prepared.
(1) 폴리실록산계 고분자층의 형성  (1) Formation of Polysiloxane-based Polymer Layer
실시예 2에서 만들어진 폴리실록산계 졸-겔 반응 용액 (고형분 1.44^%)을 상기 제조예 2에서 얻어진 전극층 상에 바 코터를 이용하여 11.43卿의 두께로 코팅한 다음, 열풍 조건에세 20°C 온도에서 10분간 건조하여 0.165 의 두께의 폴리실록산계 고분자층 (면저항: 80Q/sq)을 형성하였다. The polysiloxane sol-gel reaction solution (solid content 1.44 ^%) prepared in Example 2 was coated on the electrode layer obtained in Preparation Example 2 to a thickness of 11.43 kPa using a bar coater, and then subjected to hot air conditions at 20 ° C. It dried for 10 minutes at and formed the polysiloxane-type polymer layer (surface resistance: 80Q / sq) of 0.165 thickness.
(2) 감광성 수지층의 형성 (2) Formation of Photosensitive Resin Layer
동진쎄미켐 포토레지스트 (Positive Type) SJ-631(10cP, 고형분 23wt¾)를 상기 형성된 폴리실록산계 고분자층 상에 바 코팅을 이용하여 도포하고, 120°C 온도에서 1분간 건조하여 약 2.62//Π1 두께의 감광성 수지층을 제조하였다. 실시예 4내지 6 Dongjin Semichem photoresist (Positive Type) SJ-631 (10cP, solid content 23wt¾) was applied to the polysiloxane-based polymer layer formed by using a bar coating, dried at 120 ° C for 1 minute to a thickness of about 2.62 / / Π1 The photosensitive resin layer was produced. Examples 4-6
상기 실시예 1, 2및 3에서 각각 형성된 전극층-폴리실록산계 고분자층- 감광성 수지층의 복합체 상에 점착제가 코팅된 PET원단 필름 (25 두께)을 상온에서 압력 0.45Mp를 가하여 상기 감광성 수지층의 외부면에 합지하였다 비교예 1  The pressure-sensitive adhesive PET film (25 thickness) on the composite of the electrode layer-polysiloxane-based polymer layer-photosensitive resin layer formed in Examples 1, 2, and 3, respectively, was applied at a temperature of 0.45 Mp to the outside of the photosensitive resin layer. It was laminated to cotton. Comparative Example 1
(1) 폴리실록산계 고분자층의 형성  (1) Formation of Polysiloxane-based Polymer Layer
TE0S (테트라에틸옥시실란) 20.01 g, 물 23.55 g, IPA (아이소프로필렌 알코을) 54.95 g 및 아세트산 1.4 g 를 흔합하고 70°C에서 3시간 반웅시켜서 졸- 겔 반웅 용액의 100g (고형분 7^%)을 제조하고, 제조된 졸-겔 반응 용액과 아이소프로필렌 알코을을 1 :4의 중량비로 희석하여 졸-겔 반웅 용액의 500g (고형분 1.4wt«을 제조하였다. 20 g of TE0S (tetraethyloxysilane), 23.55 g of water, 54.95 g of IPA (isopropylene alcohol) and 1.4 g of acetic acid were mixed and reacted at 70 ° C for 3 hours to give 100 g of the sol-gel reaction solution (solid content 7 ^%) To prepare the prepared sol-gel reaction solution Isopropylene alcohol was diluted to a weight ratio of 1: 4 to prepare 500 g of a sol-gel reaction solution (solid content 1.4 wt «).
상기 졸-겔 반웅 용액 (고형분 1.4wt%)을 상기 제조예에서 얻어진 전극층 상에 바 코터를 이용하여 11.4 im의 두께로 코팅한 다음, 열풍 조건에세 20°C 온도에서 10분간 건조하여 0. 160 의 두께의 폴리실록산계 고분자층 (면저항: 256 Q /sq)을 형성하였다. The sol-gel reaction solution (solid content 1.4wt%) was coated on the electrode layer obtained in the preparation example using a bar coater at a thickness of 11.4 im, and then dried at a temperature of 20 ° C. for 10 minutes under hot air conditions. A polysiloxane polymer layer (surface resistance: 256 Q / sq) having a thickness of 160 was formed.
(2) 감광성 수지층의 형성  (2) Formation of Photosensitive Resin Layer
동진쎄미켐 포토레지스트 (Posi t ive Type) SJ-631( 10cP, 고형분 23wt%)를 상기 형성된 폴리실록산계 고분자층 상에 바 코팅을 이용하여 도포하고, 120 °C 온도에서 1분간 건조하여 약 2.62/zm 두께의 감광성 수지층을 제조하였다. Dongjin Semichem Photoresist (Posi tive Type) SJ-631 (10cP, solid content 23wt%) was applied to the polysiloxane-based polymer layer formed by using a bar coating, dried at 120 ° C for 1 minute to about 2.62 / zm The photosensitive resin layer of thickness was produced.
[실험예: 전극필름의 물성 평가] Experimental Example: Evaluation of Physical Properties of Electrode Film
실험예 1 : 접촉각측정  Experimental Example 1 Contact Angle Measurement
상기 실시예 1 내지 3 및 비교예 1에서 얻어진 폴리실록산계 고분자층의 물에 대한 접촉각을 영상 디지털 접촉각 분석기 (SE0社 phoenix-10)를 이용하여 정접촉각 (stat i c contact angle method)을 측정하였다. 실험예 2: 코팅성 및 부착성 평가  The contact angle with respect to the water of the polysiloxane-based polymer layer obtained in Examples 1 to 3 and Comparative Example 1 was measured using the image digital contact angle analyzer (phoenix-10, SE0). Experimental Example 2: Evaluation of Coating and Adhesion
상기 실시예 1 내지 3 및 비교예 1에서 얻어진 감광성 수지층에 대하여 노광 장치 (MA-6)를 이용하여 50mJ의 자외선을 가해 주고, 현상액 DPD-200(동진 세미켐)을 이용하여 상온에서 35초간 현상하고, 스트립액 ST-09 동진 세미켐)을 이용하여 상온에서 50초간 스트립 (제거) 과정을 진행하였다.  50 mJ ultraviolet rays were applied to the photosensitive resin layers obtained in Examples 1 to 3 and Comparative Example 1 using an exposure apparatus (MA-6), and developed at room temperature for 35 seconds using a developer DPD-200 (Dongjin Semichem). Then, using strip liquid ST-09 Dongjin Semichem), the strip (removal) was performed for 50 seconds at room temperature.
이때, 상기 패턴 형성 과정에서 패턴의 선폭이 제거되는 여부를 기준으로 코팅성 및 부착성을 평가하여 패턴 유지시 0 및 패턴 제거시 X로 표현하여 하기 표 1에 기재하고, 실제 형성된 패턴의 외관은 하기 도 2에 기재하였다.  At this time, the coating property and adhesion on the basis of whether or not the line width of the pattern is removed in the pattern formation process is represented by 0 when the pattern is maintained and X when removing the pattern shown in Table 1 below, It is described in Figure 2 below.
【표 11
Figure imgf000010_0001
Figure imgf000011_0001
상기 표 1에 나타난 바와 같이, 실시예 1 내지 3의 전극 필름은 접촉각이 60도 이상인 폴리실록산계 고분자층을 포함하여 감광성 수지층과 보다 용이하고 견고하게 결합될 수 있으며, 이에 따라 향상된 코팅성 및 부착성을 확보할 수 있다. 이에 반하여 비교예 1의 전극 필름의 폴리실록산계 고분자층과 감광성 수지층 간의 결합력은 충분하지 아니하여 형성되는 패턴이 잘 부착되지 않거나 형태의 일부가 유지되지 못하는 것으로 확인되었다.
Table 11
Figure imgf000010_0001
Figure imgf000011_0001
As shown in Table 1, the electrode films of Examples 1 to 3 can be more easily and firmly combined with the photosensitive resin layer, including a polysiloxane-based polymer layer having a contact angle of 60 degrees or more, thereby improving coating properties and adhesion. The castle can be secured. On the contrary, it was confirmed that the bonding force between the polysiloxane-based polymer layer and the photosensitive resin layer of the electrode film of Comparative Example 1 was not sufficient, so that the formed pattern did not adhere well or part of the shape was not maintained.

Claims

【특허청구범위】 [Patent Claims]
【청구항 1】  [Claim 1]
전도성 고분자, 탄소 나노 튜브, 그래핀, 은 나노 와이어 (AgNW) , 구리 나노 입자, 산화 인듐 주석 ( Indium Tin Oxide) 및 산화 안티몬 주석 (Ant imony Tin oxide)으로 이루어진 군에서 선택된 1종 이상의 화합물을 포함하는 투명 전극층;  Contains at least one compound selected from the group consisting of conductive polymers, carbon nanotubes, graphene, silver nanowires (AgNW), copper nanoparticles, indium tin oxide and antimony tin oxide Transparent electrode layer;
상기 투명 전극층 상에 형성되고, 물에 대한 접촉각이 60° 이상인 폴리실록산계 고분자층; 및 A polysiloxane-based polymer layer formed on the transparent electrode layer and having a contact angle with respect to water of 60 ° or more; And
상기 폴리실록산계 고분자층 상에 형성된 감광성 수지층;을 포함하는, 투명 전극 복합체 .  A photosensitive resin layer formed on said polysiloxane-based polymer layer; Transparent electrode composite.
【청구항 2】 [Claim 2]
제 1항에 있어서,  The method of claim 1,
상기 폴리실록산계 고분자층은 테트라에틸옥시실란 60 내지 90중량 및 비닐트리에록시실란, 비닐트리메록시실란, 비닐트리스 ( β _메톡시에록시)실란, 메타크릴옥시프로필트리메특시실란, β -(3 , 4- 에폭시시클로핵실)에틸트리메록시실란, 글리시드옥시프로필트리메특시실란, 머캅토프로필트리메특시실란, Υ -아미노프로필트리에특시실란, Ν- β - (아미노에틸) - Υ -아미노프로필트리메특시실란, γᅳ유레이드프로필트리에특시실란 페닐트리에록시실란, 메틸트리에록시실란, 메틸트리메록시실란, 폴리에틸렌옥사이드 변성 실란 단량체, 폴리메틸에록시실록산 및 핵사메틸디시라진으로 이루어진 군에서 선택된 1종 이상의 화합물 10 내지The polysiloxane-based polymer layer is 60 to 90 weight of tetraethyloxysilane and vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (β_methoxyethoxy) silane, methacryloxypropyltrimethicsilane, β- (3,4-epoxycyclonucleosilane) ethyltrimethoxysilane, glycidoxypropyltrimethoxysilane, mercaptopropyltrimethoxysilane, Υ-aminopropyltrieoxysilane, Ν-β-(aminoethyl) Υ -aminopropyltrimethoxysilane, γ-urethane propyltriethylsilane, phenyltriethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, polyethylene oxide modified silane monomer, polymethylethoxysiloxane and nucleus yarn 10 to 1 or more compounds selected from the group consisting of methyldisirazine
40중량 %; 간의 공중합체를 포함하는, 투명 전극 복합체. 【청구항 3】 40 weight%; A transparent electrode composite, comprising a copolymer of the liver. [Claim 3]
제 1항에 있어서,  The method of claim 1,
상기 폴리실톡산계 고분자층의 물에 대한 접촉각이 65° 내지 90° 인, 투명 전극 복합체 . 【청구항 4】 제 1항에 있어서, The contact angle with respect to the water of the polysiloxane-based polymer layer is 65 ° to 90 ° , transparent electrode composite. [Claim 4] The method of claim 1,
상기 폴리실록산계 고분자층은 0.050 내지 0.300卿의 두께 및 80 Ω /sq 내지 400 Ω /sq의 면저항을 갖는, 투명 전극 복합체 . 【청구항 5】  The polysiloxane-based polymer layer has a thickness of 0.050 to 0.300 卿 and a sheet resistance of 80 Ω / sq to 400 Ω / sq. [Claim 5]
제 1항에 있어서,  The method of claim 1,
상기 투명 전극층은 0.20 내지 3.00 의 두께 및 80 Ω /sq 내지 400 Ω /sq의 면저항을 갖는, 투명 전극 복합체. 【청구항 6】  Wherein the transparent electrode layer has a thickness of 0.20 to 3.00 and a sheet resistance of 80 Ω / sq to 400 Ω / sq. [Claim 6]
제 1항에 있어서,  The method of claim 1,
상기 전도성 고분자는 폴리아닐린계 고분자, 폴리피롤계 고분자, 폴리티오펜계 고분자 및 이들의 유도체로 이루어진 군에서 선택된 1종 이상을 포함하는, 투명 전극 복합체 .  The conductive polymer comprises at least one selected from the group consisting of polyaniline-based polymers, polypyrrole-based polymers, polythiophene-based polymers and derivatives thereof, transparent electrode composite.
【청구항 7】 [Claim 7]
거 U항에 있어서,  In U,
상기 감광성 수지층은 1/ m 내지 5 의 두께를 갖는, 투명 전극 복합체 . 【청구항 8】  The photosensitive resin layer has a thickness of 1 / m to 5, transparent electrode composite. [Claim 8]
제 1항에 있어서, .  The method of claim 1, wherein.
상기 감광성 수지층은 알카리 가용성 수지를 포함한 포지티브 포토레지스트 조성물; 또는 1이상의 반웅성 작용기를 포함한 단량체 또는 다량체 및 광개시제를 포함한 네가티브 포토레지스트 조성물;으로부터 형성되는, 투명 전극 복합체 .  The photosensitive resin layer is a positive photoresist composition containing an alkali-soluble resin; Or a negative photoresist composition comprising a monomer or multimer comprising at least one semi-active functional group and a photoinitiator;
【청구항 9】 [Claim 9]
게 1항에 있어서,  According to claim 1,
상기 폴리실록산계 고분자층은 상기 투명 전극 상에 실록산계 단량체를 포함한 졸-겔 반응용액을 도포하고 5( C이상의 온도에서 건조하여 형성되는, 투명 전극 복합체 The polysiloxane-based polymer layer is formed by applying a sol-gel reaction solution containing a siloxane monomer on the transparent electrode and dried at a temperature of 5 (C or more, Transparent electrode composite
【청구항 9】 [Claim 9]
제 1항에 있어서,  The method of claim 1,
상기 감광성 수지층 상에 형성된 이형 필름층을 더 포함하는, 전극 필름.  An electrode film, further comprising a release film layer formed on the photosensitive resin layer.
【청구항 10】 [Claim 10]
제 1항에 있어서,  The method of claim 1,
상기 플리실록산계 고분자층과 대향하도록 상기 투명 전극층의 일면에 형성된 기재 필름층을 더 포함하는, 투명 전극 복합체.  The transparent electrode composite further comprises a base film layer formed on one surface of the transparent electrode layer to face the polysiloxane-based polymer layer.
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