CN103325734A - Flexible substrate separation method and flexible substrate structure - Google Patents
Flexible substrate separation method and flexible substrate structure Download PDFInfo
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- CN103325734A CN103325734A CN2013102561839A CN201310256183A CN103325734A CN 103325734 A CN103325734 A CN 103325734A CN 2013102561839 A CN2013102561839 A CN 2013102561839A CN 201310256183 A CN201310256183 A CN 201310256183A CN 103325734 A CN103325734 A CN 103325734A
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Images
Abstract
A method for separating flexible substrate and its flexible substrate structure, the method is to form a release layer on a hard substrate, and the release layer is composed of surface modified nano particles or crystallized nano particles, then to form flexible substrate to cover the surface of release layer completely, and to separate the release layer on the flexible substrate, it can be easily taken down from the glass substrate without any other process steps or temperature limitation. The surface of the flexible substrate after separation is selectively provided with nanometer particles.
Description
[technical field]
The invention relates to a kind of flexible base plate separation method, and the method for particularly separating relevant for a kind of pliability display base plate.
[background technology]
Common flexible display process technique is to be transferred on the flexible base plate in display process technique of carrying out on glass known at present.Wherein for flexible base plate being fixed on the glass substrate, it is the setting of sticky material on the glass substrate, flexible base plate can be taken shape on the glass substrate smoothly, and in follow-up thin film transistor (TFT) array processing procedure, also can not come off, and high temperature that can anti-processing procedure and never degenerating.
But after processing procedure was finished, flexible base plate needed again and can separate on glass substrate easily, and can not injure the small circuit in the thin film transistor (TFT) array, allowed flexible display really be achieved soft flexible characteristics.Therefore in flexible base plate processing procedure now, the technology of how flexible base plate being taken off is important problem.
[summary of the invention]
Purpose of the present invention is exactly in the method that provides a kind of pliability display base plate to separate; the method is that (for example: glass) substrate forms a release layer at a hard; and release layer is comprised of nanoparticle or the crystal type nanoparticle of surfaction; (for example: macromolecule) substrate fully covers on the release layer surface to form pliability again; follow-up processing procedure is then made on flexible base plate; follow-up processing procedure comprises a kind of of following processing procedure at least, for example: the thin-film transistor processing procedure; the color filter layers processing procedure; self-emission device (for example: Organic Light Emitting Diode (OLED) etc.) processing procedure; wherein a kind of combination of processing procedure in photo-electric conversion element (for example: PN or PIN diode etc.) processing procedure or the aforementioned processing procedure.Separate processing procedure in flexible base plate, by nanoparticle or the crystal type nanoparticle of surfaction, so that this release layer directly separates easily from this hard substrate.
The nanoparticle diameter of surfaction is in fact less than 100 nanometers (nanometer), and can be inorganic material, comprise metal, alloy, metal oxide, metal nitride, metal oxynitride, alloyed oxide, alloy nitride, alloy nitrogen oxide or other suitable material, the present invention is take metal oxide as most preferred embodiment, for example silicon dioxide, titanium dioxide, aluminium oxide (Alumina), other suitable material or above-mentioned at least a combination, but be not limited to this.The release layer that the nanoparticle of surfaction forms forms surface adhesion force with hard substrate and flexible base plate respectively and forms weak the first interface and the second interface, the separation processing procedure is the surface characteristic according to unlike material, and the interface weak from adhesive force separates.After carrying out the pliability display base plate when separating processing procedure, cutting the zone of non-release layer, can need not to impose again other any fabrication steps or temperature limitings, can intactly take off from hard substrate.
Crystal type nanoparticle diameter is less than 100 nanometers (nanometer) but greater than 0, and can be inorganic material, comprise metal, alloy, metal oxide, metal nitride, metal oxynitride, alloyed oxide, alloy nitride, alloy nitrogen oxide or other suitable material, the present invention is take metal oxide as most preferred embodiment, for example high temperature crystallization type titanium dioxide (anatase or rutile phase), aluminium oxide (Alumina) or other high temperature crystallization type oxides.The release layer that the crystal type nanoparticle forms, it can form respectively the first interface and second interface of weak surface adhesion force with hard substrate and flexible base plate, and the separation processing procedure is the surface characteristic according to unlike material, and the interface weak from adhesive force separates.After carrying out the pliability display base plate when separating processing procedure, cutting the zone of non-release layer, can need not to impose again other any fabrication steps or temperature limitings, can intactly take off from hard substrate.
The present invention is because of the nanoparticle composition of proposition surfaction or the release layer of crystal type nanoparticle, can apply to follow-up high temperature film processing procedure, and thin film manufacture process is not limited to separate the front or rear making of processing procedure, does not also affect the advantage that its release layer can intactly directly separate.
For above and other purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
[description of drawings]
Fig. 1 illustrates and is the profile of this case in order to the pliability display base plate of testing contrast and developing.
Fig. 2 illustrates the profile into pliability display base plate of the present invention.
Fig. 3 illustrates and is pliability display base plate cutting schematic diagram of the present invention.
Fig. 4 A illustrates the profile that separates into pliability display base plate of the present invention.
Fig. 4 B illustrates the profile of the another kind of embodiment that separates into pliability display base plate of the present invention.
Fig. 4 C illustrates the profile of the another kind of embodiment that separates into pliability display base plate of the present invention.
Fig. 5 illustrates and is the profile after the pliability display base plate separation of the present invention.
[symbol description]
1,10: glass substrate (hard substrate or load substrate)
2,12: release layer
2 ': residual nanoparticle layer after separating
3,13: flexible base plate
4,14: the component structure layer
5: line of cut
F1: first surface adhesive force
F2: second surface adhesive force
[embodiment]
Analyze from experiment Comparative Examples shown in Figure 1, when (for example: glass substrate) release layer 12 materials of 10 surface formation are fluorine containing silane (the fluoroalkyl silanes of non-particle type at hard substrate, be called for short FAS) and when gathering dimethyl benzene (Parylene), because the material cost of FAS is high, and uncertain for spreadability and the reaction time of glass surface upgrading.Glass forms the bond of monofilm with glass behind the fluorine containing silane upgrading in addition, because of its low-surface-energy, so the surface is difficult for being coated with macromolecular material again.As for gathering dimethyl benzene (Parylene) in high temperature process, its organic material easily produces the problem of scission of link or volatilization, and causes the degree of difficulty of follow-up flexible base plate 13 and array architecture of thin film transistor layer 14 processing procedure.
For this reason, the separation method about a kind of flexible base plate proposed by the invention as shown in Figure 2, at first, forms release layer 2 at hard (such as glass, quartz or silicon substrate etc.) substrate 1, and release layer 2 is comprised of the nanoparticle behind the surfaction.In preferred embodiment of the present invention, nanoparticle can be by diameter in fact less than 100 nanometers (nanometer), but forms greater than 0 inorganic material, for example, silica nanoparticles is wherein carried out surfaction via medium with silica nanoparticles.
The course of reaction of surfaction can be silica surface hydrophily is originally changed over hydrophobicity, because the functional group of silica surface is (OH) as main take hydrophilic hydroxyl functional group, wish is hydrophobic functional group with this kind hydrophily functional group upgrading, can carry out functional group's displacement with collosol and gel (Sol Gel) method, and can be with reference to the works of C.J.Brinker in nineteen ninety about the sol-gel method detailed step " Sol Gel Science:the physics and chemistry of sol gel processing ".Solgel reaction can be divided into hydrolysis (hydrolysis) and condensation (condensation), is hydrolyzed the reaction equation shown in following (1), condensation following (2a) with (2b) shown in reaction equation:
If with trim,ethylchlorosilane (TriMethylChloroSilane, TMCS) be example, chemical mechanism in order to the upgrading nano silicon, shown in the following reaction equation (3), wherein, the physics of trim,ethylchlorosilane or chemical property can be checked MSD Sheets (material safety data sheet, MSDS)
(3)
The medium of surfaction comprises a pure oxygen functional group (alkoxy group) at least, halogen functional group (F, Cl, Br, I) or the silanes of amido (amine), such as trim,ethylchlorosilane (TMCS, TriMethylChloroSilane), dimethylchlorosilane (DMCS, DiMethylChloroSilane) hexamethyldisiloxane, (HMDS, Hexamethyldisilazane), dimethyl silicone polymer (PDMS, polydimethylsiloxane), dimethyldiethoxysilane (DMDES, dimethyldiethoxysilane) with trimethylethoxysilane TMES (trimethylethoxysilane) etc., wherein, the physics of above-mentioned upgrading material or chemical property, can check MSD Sheets (material safety data sheet, MSDS).Silanes and silica nanoparticles are dispersed in the condensation reaction that is hydrolyzed in liquid phase or the gas phase, its organic functional base is grafted on the silica nanoparticles, shown in above-mentioned reaction equation 3, and cause hydrophobic effect, the detailed step of this surfaction, can please refer to Proc.SPIE Sol-Gel Optics II, vol.1758, p396-538 (1992) or with reference to Fraunhofer ISC website
Www.isc.fraunhofer.deTherefore, do not give unnecessary details at this.Only, the dielectric material of surfaction is not limited to this.
Via coating fluid with the upgrading silica nanoparticles, cover on the glass substrate 1 with coating method, the selection of coating fluid be according to can with upgrading after silica nanoparticles compatible be main, coating fluid comprises: solvent (acetone for example, ethanol, isopropyl alcohol, alcohols, ethers, the mixed liquor of ester class or above-mentioned at least two kinds of solvents), if also can add other additive but obtain more stable coating fluid, for example: dispersant, wherein dispersant comprises macromolecule, organosilicon alkanes and interfacial agent (comprise anionic, cationic, nonionic and double ion type).Moreover the upgrading silica nanoparticles layer that coating is finished imposes approximately 350 ° of C and toasts to remove unnecessary medium and coating fluid to about 500 ° of C, so that release layer 2 finally is comprised of the upgrading silica nanoparticles.
Moreover, on release layer 2, forming flexible base plate 3 covers on the release layer 2, the material of described flexible base plate 3, it for example is the high-molecular organic material that possesses good pliability (flexibility), for example, polyimides (Polyimide, PI), polyethylene (Polyethylene, PE), polychlorostyrene ethene (PolyVinyl Chloride, PVC), polypropylene (Polypropylene, PP), polystyrene (Polystyrene, PS), poly-methyl propionyl acid methyl esters (Poly (methyl methacrylate), PMMA), Merlon (Polycarbonate, PC), poly-terephthaldehyde's diethylester (Polyethylene terephthalate, PET), PEN (Polyethylene naphthalate, PEN), polytetrafluoroethylene (Polytetrafluoroethylene, PTFE), Poly-s 179 (Polyethersulfone, PES), phenolic resins (Phenol formaldehyde resin, PF), unsaturated polyester (UP) (Unsaturated polyester resin, UP), Epoxy Resins, silicone resin (Silicone Resins), melamine tree (Melamine Resins), Lauxite (Urea formaldehyde), but be not subject to above material, if need withstand high temperatures processing procedure (approximately greater than 400 ° of C), then the present embodiment is take polyimides as most preferred embodiment.Wherein, the physics of flexible base plate 3 or chemical property can be checked MSD Sheets (material safety data sheet, MSDS).The processing procedure of follow-up component structure layer 4 then carries out on flexible base plate 3.And after finishing, carry out again separating of flexible base plate 3 and glass substrate 1.Generally speaking, the processing procedure of component structure layer 4 for example is wherein a kind of combination of processing procedure in thin-film transistor processing procedure, color filter producing process, black matrix" processing procedure, self-emission device (for example: Organic Light Emitting Diode (OLED), inorganic light-emitting diode etc.) processing procedure, photo-electric conversion element (for example: PN, PIN diode, light detection device (photo-sensor), solar cell etc.) processing procedure or the aforementioned processing procedure.For example: when the processing procedure of the component structure layer 4 that carries out was the thin-film transistor processing procedure, formed thin-film transistor can be described as active device array on the flexible base plate 3; When the component structure layer 4 that carries out was color filter producing process, formed colored filter can be described as colorful optical filter array on the flexible base plate 3.On the other hand, when the component structure layer 4 that carries out comprises thin-film transistor processing procedure and color filter producing process simultaneously, formed array then can be described as colored filter and is positioned at (COA on the thin-film transistor on the flexible base plate 3, color filter on array) array structure or thin-film transistor are positioned at the array structure of colored filter (AOC, array on color filter).A direction again, when the component structure layer 4 that carries out comprises black matrix" in thin-film transistor processing procedure and the color filter producing process simultaneously, formed array then can be described as black matrix" and is positioned at (BOA on the thin-film transistor on the flexible base plate 3, black on array) array structure or thin-film transistor are positioned at the array structure of (AOB, array on color filter) on the black matrix".Hold above-mentionedly, the thin-film transistor processing procedure for example is amorphous silicon membrane transistor processing procedure, polycrystalline SiTFT processing procedure, oxide semiconductor thin-film transistor processing procedure or organic semiconductor thin film transistor processing procedure.
In separation process, the silica nanoparticles surface behind upgrading has hydrophobic characteristic, and the silica nanoparticles behind the upgrading and glass substrate or flexible base plate bond power wherein one a little less than.Therefore, has first surface adhesive force F1 between the interface of its release layer 2 and glass substrate (or being called load substrate (carrier substrate)) 1, and having second surface adhesive force F2 between the interface of flexible base plate 3 and release layer 2, first surface adhesive force F1 is in fact greater than second surface adhesive force F2.Must should be noted, the adhesive force between the interface of flexible base plate and hard substrate (indicating) is much larger than above-mentioned first surface adhesive force F1 and second surface adhesive force F2 at this moment.Hereat, shown in figure three, when utilizing release layer 2 to carry out separating of flexible base plate 3 and glass substrate 1, after the zone excision of line of cut 5 with non-release layer 2, can need not to impose again other any fabrication steps or temperature limitings, flexible base plate 3 intactly can be taken off from glass substrate, and release layer 2 is stayed on the glass substrate 1, shown in Fig. 4 A.The separation profile that illustrates as for Fig. 4 B, then be as second surface adhesive force F2 between the interface of flexible base plate 3 and release layer 2 during in fact greater than the first surface adhesive force F1 between the interface of release layer 2 and glass substrate 1, after then separating, release layer 2 can be deposited on the surface of flexible base plate 3, and release layer 2 is not stayed on the glass substrate 1.In other embodiment, when second surface adhesive force F2 between the interface of flexible base plate 3 and release layer 2 is same as in fact first surface adhesive force F1 between the interface of release layer 2 and glass substrate 1, and when second surface adhesive force F2 is also in fact greater than the adhesive force between nanoparticle between the interface of flexible base plate 3 and release layer 2, release layer 2 parts can remain in glass substrate 1 and release layer 2 another part can remain on the surface of flexible base plate 3 after then separating, the separation profile that illustrates such as Fig. 4 C.Wherein, non-release zone refers to outside the tail end of release layer 2 or edge (edge), the overlay structure of flexible base plate 3 and glass substrate 1 is only arranged, and is not present in release layer 2; Release zone refers to, in the tail end of release layer 2 or the edge (edge), the overlay structure that has flexible base plate 3, glass substrate 1 and release layer 2, and the projected area of component structure layer 4 optionally identical in fact with the projected area of release layer 2 or less than.In addition, must it should be noted that, preferably, line of cut 5 is to aim to cut on the tail end or edge (edge) of release layer 2, but when cutting if the problem on the precision is arranged, line of cut 5 can be aimed at very near near release layer 2 tail ends or edge (edge), still flexible base plate 3 can be taken off.
With reference to figure 5, flexible base plate 3 is through behind the separation processing procedure shown in Fig. 4 B or Fig. 4 C, and the surface of the flexible base plate 3 of separation has the silica nanoparticles layer 2 ' that left behind in the release layer 2 and adheres to.The flexible base plate 3 of supposing to be attached with silica nanoparticles layer 2 ' is the substrates that apply to light-emitting display panel, and when can self luminous element being downward light-emitting component (failing among the figure to illustrate), then can adjust (the refractive index of adjustment material by thickness and the silica nanoparticles rete porosity of the silica nanoparticles 2 ' that is attached to the flexible base plate surface, n), make its light when penetrating flexible base plate, reduce light at boundary reflection, make luminous energy obtain more efficient use; If stick again afterwards diaphragm (not illustrating) in silica nanoparticles 2 ' again, also can cooperate the refractive index value (n value) of flexible base plate 3 and diaphragm to come more to adjust silica nanoparticles 2 ' thickness and its n value.
Further specify, in this embodiment, release layer 2 is comprised of the upgrading silica nanoparticles, and is coated on the glass substrate 1 in the wet type mode, and processing procedure is simple and save time.Moreover, the release layer 2 that is comprised of silica nanoparticles behind the upgrading is because of its organic moiety, for example: formed by Si-O, Si-C, the organic material that forms than general C-C has more the characteristic of high temperature resistant processing procedure, can overcome in follow-up high temperature process and to produce scission of link or volatilization and cause gas to disengage, and can't finish the shortcoming that thin-film transistor is made.
In another embodiment of the present invention, the nanoparticle that above-mentioned release layer 2 is used crystal type instead forms, for example high temperature crystallization type titanium dioxide (anatase or rutile phase) or aluminium oxide (Alumina), size is approximately less than 100 nanometers (nanometer) but greater than 0, and the titanium oxide nanoparticles of crystal type can be the product ST-01 of Ishihara Sanyo limited company supply.Only, product material is not as limit.
Coating method from impose baking and all do not have differently with the mode that is disclosed in the above embodiment of the present invention to remove coating fluid, therefore repeat no more, but this release layer 2 finally is comprised of titanium oxide nanoparticles of crystal type.Its material characteristic of the titanium oxide nanoparticles of crystal type has higher recrystallization temperature, even still do not produce melting with glass substrate 1 easily through the processing procedure of high temperature.And, a little less than the release layer 2 and the surface adhesion force between the flexible base plate 3 that the release layer 2 that the titanium oxide nanoparticles of crystal type forms and the titanium oxide nanoparticles of the comparable crystal type of surface adhesion force between the glass substrate 1 form.Must should be noted, this moment flexible base plate and hard substrate interface between adhesive force (indicating) much larger than the surface adhesion force between release layer 2 and the glass substrate 1 reach and flexible base plate 3 between surface adhesion force.
In sum; form in nanoparticle or the crystal type nanoparticle of release layer 2 of the present invention by upgrading; it can form respectively the first interface F1 or the second interface F2 of weak surface adhesion force with hard substrate or flexible base plate; can apply to follow-up high temperature film processing procedure; and thin film manufacture process is not limited to separate the front or rear making of processing procedure, does not also affect the advantage that its release layer can intactly directly separate.In addition, said elements structure sheaf 4 can be used for finishing various flexible display panel, (non-light-emitting display panel for example, for example: electrophoretic display panel, display panels, the aobvious profit of electricity display floater, the electrochromic display panel, or other suitable display floater, light-emitting display panel, for example: organic electroluminescence display panel, the inorganic light-emitting display floater, or other suitable display floater, also has other utilization, for example: stereo display panel, original screen panel, liquid crystal lens (liquid crystal lens), contact panel or other suitable utilization), the combination of solar panel or above-mentioned at least a panel.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (11)
1. the separation method of a flexible base plate, it comprises the following steps:
One hard substrate and a flexible base plate are provided;
Form a release layer between this hard substrate and this flexible base plate, the nanoparticle that this release layer includes a plurality of crystal type nanoparticles or has a surfaction forms, and form one first interface between this hard substrate, and form one second interface between this flexible base plate;
On this flexible base plate, form an element structure sheaf; And
This flexible base plate is carried out one separate processing procedure, cut the overlapping region of this hard substrate and this release layer and flexible base plate, and this flexible base plate is intactly directly intactly separated with this hard substrate from adhesive force weak this first interface or this second interface.
2. the separation method of flexible base plate as claimed in claim 1 is characterized in that, this nanoparticle diameter is less than 100 nanometers (nanometer) but greater than 0 nanometer.
3. the separation method of flexible base plate as claimed in claim 1 is characterized in that, this nanoparticle material is inorganic material.
4. the separation method of flexible base plate as claimed in claim 3, it is characterized in that, the nanoparticle of this inorganic comprises metal, alloy, metal oxide, metal nitride, metal oxynitride, alloyed oxide, alloy nitride, alloy nitrogen oxide or at least a combination of above-mentioned material.
5. the separation method of flexible base plate as claimed in claim 1, it is characterized in that, nanoparticle with surfaction, wherein, can make the medium of this nano-particle surface upgrading comprise hexamethyldisiloxane (HMDS, Hexamethyldisilazane), dimethyl silicone polymer (PDMS, polydimethylsiloxane), dimethyldiethoxysilane (DMDES, dimethyldiethoxysilane) with trimethylethoxysilane (TMES, trimethylethoxysilane).
6. the separation method of flexible base plate as claimed in claim 1 is characterized in that, this release layer is coated on this hard substrate in the wet type mode, and coating fluid comprises solvent, surfaction or crystal type nanoparticle and additive at least.
7. the separation method of flexible base plate as claimed in claim 6; it is characterized in that; the method that forms this release layer comprises: impose baking removing this coating fluid, so that this release layer finally is comprised of this crystal type nanoparticle or nanoparticle with surfaction.
8. the separation method of flexible base plate as claimed in claim 1 is characterized in that, this flexible base plate is a polymeric substrate.
9. the separation method of flexible base plate as claimed in claim 1, it is characterized in that, this component structure layer is by a thin-film transistor processing procedure, color filter producing process, black matrix" processing procedure, organic illuminating element processing procedure, photo-electric conversion element processing procedure or at least a combination of aforementioned processing procedure.
10. flexible base plate structure comprises:
One flexible base plate, it has a first surface and a second surface;
One nanoparticle layer is comprised of a plurality of crystal type nanoparticles or nanoparticle with surfaction, and this nanoparticle layer is attached to the first surface of this flexible base plate; And
One element structure sheaf is arranged on this flexible base plate second surface.
11. flexible base plate flexible base plate structure as claimed in claim 10 is characterized in that this component structure layer is by at least a combination of a thin-film transistor, colored filter, black matrix", organic illuminating element, photo-electric conversion element or aforementioned components.
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|---|---|
| TW201440599A (en) | 2014-10-16 |
| TWI468092B (en) | 2015-01-01 |
| CN103325734B (en) | 2016-04-20 |
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