TWI657102B - Polysiloxane copolymer and antistatic agent and resin composition containing the same - Google Patents

Polysiloxane copolymer and antistatic agent and resin composition containing the same Download PDF

Info

Publication number
TWI657102B
TWI657102B TW104111270A TW104111270A TWI657102B TW I657102 B TWI657102 B TW I657102B TW 104111270 A TW104111270 A TW 104111270A TW 104111270 A TW104111270 A TW 104111270A TW I657102 B TWI657102 B TW I657102B
Authority
TW
Taiwan
Prior art keywords
formula
bis
carbon atoms
trifluoromethanesulfonyl
polysiloxane copolymer
Prior art date
Application number
TW104111270A
Other languages
Chinese (zh)
Other versions
TW201605933A (en
Inventor
山田哲郎
吉川裕司
石井祐典
今泉暁
Original Assignee
日商信越化學工業股份有限公司
日商廣榮化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越化學工業股份有限公司, 日商廣榮化學工業股份有限公司 filed Critical 日商信越化學工業股份有限公司
Publication of TW201605933A publication Critical patent/TW201605933A/en
Application granted granted Critical
Publication of TWI657102B publication Critical patent/TWI657102B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/30Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen phosphorus-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L69/00Compositions of polycarbonates; Compositions of derivatives of polycarbonates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/16Anti-static materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)

Abstract

本發明係提供一種可對樹脂賦予高抗靜電性,具有可耐住對樹脂之熔融混練時的高溫之良好耐熱性,且可製造作為光學用黏著劑之具有實用性強度特性之矽氧樹脂的聚矽氧烷共聚物。 The present invention provides a silicone resin that can impart high antistatic properties to resins, has good heat resistance that can withstand high temperatures during melt-kneading of resins, and can be used as an optical adhesive with practical strength characteristics. Polysiloxane copolymer.

本發明係提供一種聚矽氧烷共聚物,其係共聚合式(1)所示之鎓鹽、與式(2)所示之三烷氧基矽烷、與作為任意成分之式(3)所示之二烷氧基矽烷而得到。 The present invention provides a polysiloxane copolymer which copolymerizes an onium salt represented by formula (1), a trialkoxysilane represented by formula (2), and a compound represented by formula (3) as an optional component. The obtained dialkoxysilane is obtained.

R5-Si(OR6)3 (2) R 5 -Si (OR 6 ) 3 (2)

Description

聚矽氧烷共聚物以及含有該共聚物之抗靜電劑及樹脂組成物 Polysiloxane copolymer and antistatic agent and resin composition containing the same

本發明係關於聚矽氧烷共聚物以及含有該共聚物之抗靜電劑及摻合此抗靜電劑之樹脂組成物。 The present invention relates to a polysiloxane copolymer, an antistatic agent containing the copolymer, and a resin composition incorporating the antistatic agent.

報告有陽離子為具有三烷氧基矽烷基烷基之銨或磷鎓,陰離子為全氟烷基磺醯基醯亞胺之鎓鹽,可作為氟樹脂用之低分子型抗靜電劑使用之要旨(參照專利文獻1:日本特開2010-248165號公報)。然而,本發明者們瞭解到將係前述鎓鹽的1種之1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺作為聚碳酸酯樹脂、丙烯酸樹脂及矽氧樹脂的抗靜電劑使用時,雖可對矽氧樹脂賦予抗靜電性能,無法對於聚碳酸酯樹脂及丙烯酸樹脂賦予實用性之抗靜電性能。進而,將抗靜電劑加熱熔融於聚碳酸酯樹脂進行混練時,要求抗靜電劑本身的耐熱性。然而,銨型之鎓鹽或包含其之聚矽氧烷共聚物,並未具有可耐得住熔融混練時之高溫的充分耐熱性。又,瞭解到相對於矽氧樹脂,無法充分進行矽氧樹脂 的硬化反應,得不到作為光學用黏著劑之實用性強度特性的矽氧樹脂組成物(參照後述之比較例)。 It is reported that the cation is ammonium or phosphonium having a trialkoxysilylalkyl group, and the anion is a perfluoroalkylsulfonylsulfoniumimine salt, which can be used as a low molecular antistatic agent for fluororesins. (Refer to Patent Document 1: Japanese Patent Application Laid-Open No. 2010-248165). However, the inventors have learned that 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethanesulfonium), which is one of the aforementioned onium salts, Base) When used as an antistatic agent for polycarbonate resins, acrylic resins, and silicone resins, although antistatic properties can be imparted to silicone resins, practical antistatic properties cannot be imparted to polycarbonate resins and acrylic resins. performance. Furthermore, when an antistatic agent is heated and melted in a polycarbonate resin for kneading, the heat resistance of the antistatic agent itself is required. However, the ammonium-type onium salt or a polysiloxane copolymer containing the same does not have sufficient heat resistance that can withstand the high temperature during melt-kneading. Moreover, it was understood that silicone resin cannot be sufficiently used for silicone resin. Silicone resin composition (see Comparative Example to be described later) cannot be obtained as a hardening reaction of the optical fiber as a practical strength characteristic.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Literature]

〔專利文獻1〕日本特開2010-248165號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2010-248165

據此,本發明係以提供可對於聚碳酸酯樹脂、丙烯酸樹脂及矽氧樹脂賦予高抗靜電性,尤其是作為抗靜電劑而加熱熔融於聚碳酸酯樹脂,進行混練時之耐熱性優異,且可製造作為光學用黏著劑而具有實用性強度特性之矽氧樹脂的聚矽氧烷共聚物及含有該聚矽氧烷共聚物之抗靜電劑作為目的。進而,以提供摻合此抗靜電劑之樹脂組成物作為另一目的。 Accordingly, the present invention is to provide a polycarbonate resin, an acrylic resin, and a silicone resin with high antistatic properties. In particular, the invention can be used as an antistatic agent to heat-melt a polycarbonate resin and provide excellent heat resistance during kneading. In addition, it is possible to produce a polysiloxane copolymer of a siloxane resin having practical strength characteristics as an optical adhesive and an antistatic agent containing the polysiloxane copolymer. Further, another object is to provide a resin composition incorporating the antistatic agent.

本發明者們為了解決上述目的,努力進行研討時,發現藉由共聚合式(1)所示之鎓鹽、與式(2)所示之三烷氧基矽烷、與作為任意成分之式(3)所示之二烷氧基矽烷而得到之聚矽氧烷共聚物的同時,發現將該聚矽氧烷共聚物作為抗靜電劑使用於聚碳酸酯樹脂、丙烯酸樹脂及矽氧樹脂時,可對於各種樹脂賦予高抗靜電性能。 進而,發現該聚矽氧烷共聚物,尤其是具有可耐得住對聚碳酸酯樹脂之熔融混練時的高溫之良好耐熱性。又,發現圓滑進行矽氧樹脂的硬化反應,可得到作為光學用黏著劑之具有實用性強度特性之矽氧樹脂組成物,而終至完成本發明。 In order to solve the above-mentioned object, the present inventors have conducted research and found that the onium salt represented by the formula (1), the trialkoxysilane represented by the formula (2), and the formula ( 3) At the same time as the polysiloxane copolymer obtained from the dialkoxysilane shown in the figure, when the polysiloxane copolymer was used as an antistatic agent in polycarbonate resin, acrylic resin, and silicone resin, Provides high antistatic properties to various resins. Furthermore, the polysiloxane copolymer was found to have good heat resistance which can withstand the high temperature during melt-kneading of the polycarbonate resin. In addition, it was found that the hardening reaction of the siloxane resin progresses smoothly, and a siloxane resin composition having practical strength characteristics can be obtained as an optical adhesive, and the present invention has been completed.

即,本發明係提供下述之聚矽氧烷共聚物、其製造方法、抗靜電劑、樹脂組成物。 That is, this invention provides the following polysiloxane copolymer, its manufacturing method, an antistatic agent, and a resin composition.

〔1〕 〔1〕

共聚合式(1)所示之鎓鹽、與式(2)所示之三烷氧基矽烷、與作為任意成分之式(3)所示之二烷氧基矽烷而得到之聚矽氧烷共聚物,式(1): (式中,Q+表示氮陽離子或磷陽離子;R1表示碳數1~3之烷基,R2~R4表示碳數1~8之烷基;R2與R3係於末端彼此鍵結,可形成咯啶環、哌啶環、吡啶環、膦烷環、磷雜環己烷環或三磷雜苯環;惟,R2與R3於末端彼此鍵結形成吡啶環或三磷雜苯環時,R4不存在;X-表示陰離子;n為0~3之整數);式(2):【化2】R5-Si(OR6)3 (2)(式中,R5表示碳數1~10之烷基、碳數6~10之芳基、 碳數7~10之芳烷基、或碳數2~8之烯基,R6表示碳數1~3之烷基);式(3): (式中,R7表示碳數1~10之烷基、碳數6~10之芳基、或碳數7~10之芳烷基,R8表示碳數1~3之烷基)。 A polysiloxane obtained by copolymerizing an onium salt represented by the formula (1), a trialkoxysilane represented by the formula (2), and a dialkoxysilane represented by the formula (3) as an optional component. Copolymer, formula (1): (In the formula, Q + represents a nitrogen cation or a phosphorus cation; R 1 represents an alkyl group having 1 to 3 carbon atoms; R 2 to R 4 represents an alkyl group having 1 to 8 carbon atoms; R 2 and R 3 are bonded to each other at the ends; Can form a pyridine ring, a piperidine ring, a pyridine ring, a phosphorane ring, a phosphocyclohexane ring, or a triphosphine ring; however, R 2 and R 3 are bonded to each other at the ends to form a pyridine ring or a triphosphorus ring In the heterobenzene ring, R 4 does not exist; X - represents an anion; n is an integer of 0 to 3); Formula (2): [Chem. 2] R 5 -Si (OR 6 ) 3 (2) (where, R 5 represents an alkyl group having 1 to 10 carbon atoms, aryl group having 6 to 10 carbon atoms, aralkyl group having 7 to 10 carbon atoms, or alkenyl group having 2 to 8 carbon atoms, and R 6 represents an alkyl group having 1 to 3 carbon atoms Base); formula (3): (In the formula, R 7 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 10 carbon atoms, and R 8 represents an alkyl group having 1 to 3 carbon atoms).

〔2〕 〔2〕

如〔1〕之聚矽氧烷共聚物,其中,前述式(1)中,Q+為磷陽離子。 The polysiloxane copolymer according to [1], wherein in the formula (1), Q + is a phosphorus cation.

〔3〕 [3]

如〔1〕或〔2〕之聚矽氧烷共聚物,其中,前述式(1)中,X-為鹵素陰離子或含氟陰離子。 The polysiloxane copolymer according to [1] or [2], wherein in the formula (1), X - is a halogen anion or a fluorine-containing anion.

〔4〕 [4]

如〔3〕之聚矽氧烷共聚物,其中,前述含氟陰離子為三氟甲烷磺酸陰離子、雙(三氟甲烷磺醯基)醯亞胺陰離子、四氟硼酸酯陰離子或六氟磷酸酯陰離子。 The polysiloxane copolymer according to [3], wherein the fluorine-containing anion is a trifluoromethanesulfonic acid anion, a bis (trifluoromethanesulfonyl) sulfonimide anion, a tetrafluoroborate anion, or hexafluorophosphate Ester anion.

〔5〕 [5]

如〔1〕~〔4〕中任一項之聚矽氧烷共聚物,其係相對於前述式(1)所示之鎓鹽1莫耳,共聚合前述式(2)所示之三烷氧基矽烷0.5~95莫耳與前述式(3)所示之二烷氧基矽烷0~49莫耳而得到。 The polysiloxane copolymer according to any one of [1] to [4], which copolymerizes a trioxane represented by the aforementioned formula (2) with respect to 1 mole of the onium salt represented by the aforementioned formula (1). It is obtained from 0.5 to 95 moles of oxysilane and 0 to 49 moles of the dialkoxysilane represented by the formula (3).

〔6〕 [6]

如〔1〕~〔4〕中任一項之聚矽氧烷共聚物,其係相對於前述式(1)所示之鎓鹽1莫耳,共聚合前述式(2)所示之三烷氧基矽烷0.5~95莫耳與前述式(3)所示之二烷氧基矽烷4~49莫耳而得到。 The polysiloxane copolymer according to any one of [1] to [4], which copolymerizes a trioxane represented by the aforementioned formula (2) with respect to 1 mole of the onium salt represented by the aforementioned formula (1). It is obtained from 0.5 to 95 moles of oxysilane and 4 to 49 moles of dialkoxysilane represented by the formula (3).

〔7〕 [7]

一種抗靜電劑,其係含有如〔1〕~〔6〕中任一項之聚矽氧烷共聚物。 An antistatic agent containing a polysiloxane copolymer according to any one of [1] to [6].

〔8〕 〔8〕

一種樹脂組成物,其係含有如〔7〕之抗靜電劑。 A resin composition containing an antistatic agent such as [7].

〔9〕 〔9〕

如〔8〕之樹脂組成物,其中,前述樹脂組成物為聚碳酸酯樹脂組成物、丙烯酸樹脂組成物或矽氧樹脂組成物。 The resin composition according to [8], wherein the resin composition is a polycarbonate resin composition, an acrylic resin composition, or a silicone resin composition.

〔10〕 [10]

一種如〔1〕~〔6〕中任一項之聚矽氧烷共聚物的製造方法,其特徵係於鹽酸存在下,共聚合前述式(1)所示之鎓鹽、與前述式(2)所示之三烷氧基矽烷、與作為任意成分之前述式(3)所示之二烷氧基矽烷。 A method for producing a polysiloxane copolymer according to any one of [1] to [6], which is characterized by copolymerizing an onium salt represented by the aforementioned formula (1) and the aforementioned formula (2) in the presence of hydrochloric acid. A trialkoxysilane represented by) and a dialkoxysilane represented by the aforementioned formula (3) as an optional component.

本發明之聚矽氧烷共聚物可作為抗靜電劑使用,藉由將該抗靜電劑用在聚碳酸酯樹脂、丙烯酸樹脂及矽氧樹脂,可製造具有高抗靜電性能之樹脂組成物,尤其是對聚碳酸酯樹脂的熔融混練時所必要之耐熱性亦優異, 又,使用本發明之聚矽氧烷共聚物時,可製造作為光學用黏著劑之具有實用性強度特性之矽氧樹脂組成物。 The polysiloxane copolymer of the present invention can be used as an antistatic agent. By using the antistatic agent in polycarbonate resin, acrylic resin, and silicone resin, a resin composition having high antistatic properties can be produced, especially It is excellent in heat resistance necessary for melt-kneading polycarbonate resins, In addition, when the polysiloxane copolymer of the present invention is used, a silicone resin composition having practical strength characteristics as an optical adhesive can be produced.

以下具體說明本發明。 The present invention will be specifically described below.

有關本發明之聚矽氧烷共聚物如上述,係藉由共聚合式(1)所示之鎓鹽(以下稱為鎓鹽(1))與式(2)所示之三烷氧基矽烷(以下稱為三烷氧基矽烷(2))與作為任意成分之式(3)所示之二烷氧基矽烷(以下稱為二烷氧基矽烷(3))而得到者。 As described above, the polysiloxane copolymer of the present invention is obtained by copolymerizing an onium salt represented by formula (1) (hereinafter referred to as an onium salt (1)) and a trialkoxysilane represented by formula (2). (Hereinafter referred to as trialkoxysilane (2)) and a dialkoxysilane (hereinafter referred to as dialkoxysilane (3)) represented by formula (3) as an optional component.

式(1): (式中,Q+表示氮陽離子或磷陽離子。R1表示碳數1~3之烷基,R2~R4表示碳數1~8之烷基。R2與R3係於末端彼此鍵結,可形成咯啶環、哌啶環、吡啶環、膦烷環、磷雜環己烷環或三磷雜苯環。惟,R2與R3於末端彼此鍵結形成吡啶環或三磷雜苯環時,R4不存在。X-表示陰離子。n為0~3之整數)。 Formula 1): (In the formula, Q + represents a nitrogen cation or a phosphorus cation. R 1 represents an alkyl group having 1 to 3 carbon atoms, and R 2 to R 4 represent an alkyl group having 1 to 8 carbon atoms. R 2 and R 3 are bonded to each other at the terminals. It can form a pyridine ring, a piperidine ring, a pyridine ring, a phosphorane ring, a phosphocyclohexane ring or a triphosphine ring. However, R 2 and R 3 are bonded to each other at the ends to form a pyridine ring or a triphosphorus ring. In the case of a heterobenzene ring, R 4 does not exist. X - represents an anion. N is an integer of 0 to 3).

式(2):【化5】R5-Si(OR6)3 (2)(式中,R5表示碳數1~10之烷基、碳數6~10之芳基、碳數7~10之芳烷基、或碳數2~8之烯基,R6表示碳數 1~3之烷基)。 Formula (2): [Chem 5] R 5 -Si (OR 6 ) 3 (2) (where R 5 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, and 7 to 10 carbon atoms) An aralkyl group of 10 or an alkenyl group of 2 to 8 carbons, and R 6 represents an alkyl group of 1 to 3 carbons).

式(3): (式中,R7表示碳數1~10之烷基、碳數6~10之芳基、或碳數7~10之芳烷基,R8表示碳數1~3之烷基)。 Equation (3): (In the formula, R 7 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 10 carbon atoms, and R 8 represents an alkyl group having 1 to 3 carbon atoms).

以下,對於上述成分進一步詳述時,本發明所使用之鎓鹽(1)可依日本特開2010-248165號公報所記載之方法製造。 Hereinafter, when the above-mentioned components are further described in detail, the onium salt (1) used in the present invention can be produced by a method described in Japanese Patent Application Laid-Open No. 2010-248165.

式(1)中,Q+表示氮陽離子或磷陽離子,較佳為磷陽離子。R1為碳數1~3之烷基,具體而言,可列舉甲基、乙基、丙基及異丙基,較佳為甲基及乙基,特佳為甲基。R2~R4表示碳數1~8之烷基,可為直鏈狀及分支鏈狀之任一種,較佳為直鏈狀之烷基。具體而言,例如可列舉甲基、乙基、丙基、丁基、己基、辛基等,較佳為甲基、乙基、丙基及丁基,特佳為丁基。R2與R3於末端彼此鍵結,可形成咯啶環、哌啶環、吡啶環、膦烷環、磷雜環己烷環或三磷雜苯環。惟,R2與R3於末端彼此鍵結形成吡啶環或三磷雜苯環時,R4不存在。X-表示陰離子。作為X-,可列舉鹵素陰離子或含氟陰離子,作為鹵素陰離子,較佳為氯陰離子、溴陰離子、碘陰離子,更佳為氯陰離子。作為含氟陰離子,較佳為三氟甲烷磺酸陰離子、雙(三氟甲烷磺醯基)醯亞胺陰離子、四氟硼酸酯陰 離子、六氟磷酸酯陰離子,更佳為雙(三氟甲烷磺醯基)醯亞胺陰離子。 In the formula (1), Q + represents a nitrogen cation or a phosphorus cation, and is preferably a phosphorus cation. R 1 is an alkyl group having 1 to 3 carbon atoms, and specifically, methyl, ethyl, propyl, and isopropyl are mentioned, methyl and ethyl are preferred, and methyl is particularly preferred. R 2 to R 4 represent an alkyl group having 1 to 8 carbon atoms, and may be any of a linear and branched chain, and a linear alkyl group is preferred. Specific examples include methyl, ethyl, propyl, butyl, hexyl, octyl, and the like, methyl, ethyl, propyl, and butyl are preferred, and butyl is particularly preferred. R 2 and R 3 are bonded to each other at the ends, and can form a pyridine ring, a piperidine ring, a pyridine ring, a phosphine ring, a phosphocyclohexane ring, or a triphosphine ring. However, when R 2 and R 3 are bonded to each other at the ends to form a pyridine ring or a triphosphine ring, R 4 does not exist. X - represents an anion. Examples of X include a halogen anion or a fluorine-containing anion. As the halogen anion, a chloride anion, a bromine anion, and an iodine anion are preferable, and a chloride anion is more preferable. As the fluorine-containing anion, a trifluoromethanesulfonic acid anion, a bis (trifluoromethanesulfonyl) fluorenimide anion, a tetrafluoroborate anion, and a hexafluorophosphate anion are preferable, and a bis (trifluoromethane) is more preferable. Sulfonyl) fluorenimide anion.

作為鎓鹽(1)的具體例,可列舉1,1,1-三甲基-1-〔(三甲氧基矽烷基)甲基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔2-(三甲氧基矽烷基)乙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔3-(三甲氧基矽烷基)丙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔4-(三甲氧基矽烷基)丁基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔(三甲氧基矽烷基)甲基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔2-(三甲氧基矽烷基)乙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔3-(三甲氧基矽烷基)丙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔4-(三甲氧基矽烷基)丁基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔(三甲氧基矽烷基)甲基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔2-(三甲氧基矽烷基)乙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔3-(三甲氧基矽烷基)丙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔4-(三甲氧基矽烷基)丁基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔(三甲氧基矽烷基)甲基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔2-(三甲氧基矽烷基)乙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔3-(三甲氧基矽烷基) 丙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔4-(三甲氧基矽烷基)丁基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔(三甲氧基矽烷基)甲基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔2-(三甲氧基矽烷基)乙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔3-(三甲氧基矽烷基)丙基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔4-(三甲氧基矽烷基)丁基〕銨=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔(三甲氧基矽烷基)甲基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔2-(三甲氧基矽烷基)乙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔3-(三甲氧基矽烷基)丙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三甲基-1-〔4-(三甲氧基矽烷基)丁基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔(三甲氧基矽烷基)甲基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔2-(三甲氧基矽烷基)乙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔3-(三甲氧基矽烷基)丙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三乙基-1-〔4-(三甲氧基矽烷基)丁基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔(三甲氧基矽烷基)甲基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔2-(三甲氧基矽烷基)乙基〕磷鎓=雙(三氟甲烷磺醯基) 醯亞胺、1,1,1-三丁基-1-〔3-(三甲氧基矽烷基)丙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三丁基-1-〔4-(三甲氧基矽烷基)丁基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔(三甲氧基矽烷基)甲基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔2-(三甲氧基矽烷基)乙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔3-(三甲氧基矽烷基)丙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三己基-1-〔4-(三甲氧基矽烷基)丁基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔(三甲氧基矽烷基)甲基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔2-(三甲氧基矽烷基)乙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔3-(三甲氧基矽烷基)丙基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1,1,1-三辛基-1-〔4-(三甲氧基矽烷基)丁基〕磷鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔(三甲氧基矽烷基)甲基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔(三甲氧基矽烷基)甲基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔(三甲氧基矽烷基)甲基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔(三甲氧基矽烷基)甲基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔(三甲氧基矽烷基)甲基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔(三甲氧基矽烷基)甲基〕吡咯 鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔2-(三甲氧基矽烷基)乙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔3-(三甲氧基矽烷基)丙基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔 4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔4-(三甲氧基矽烷基)丁基〕吡咯鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔(三甲氧基矽烷基)甲基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔2-(三甲氧基矽烷基)乙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔3-(三甲氧基矽烷基)丙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔3-(三甲氧基矽烷基)丙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔3-(三甲氧基矽烷基)丙基〕哌 啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔3-(三甲氧基矽烷基)丙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔3-(三甲氧基矽烷基)丙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔3-(三甲氧基矽烷基)丙基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-甲基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-乙基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丙基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-丁基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-己基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-辛基-1-〔4-(三甲氧基矽烷基)丁基〕哌啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔(三甲氧基矽烷基)甲基〕吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔2-(三甲氧基矽烷基)乙基〕吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔3-(三甲氧基矽烷基)丙基〕吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔4-(三甲氧基矽烷基)丁基〕吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔(三甲氧基矽烷基)甲基〕-2-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔2-(三甲氧基矽烷基)乙基〕-2-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔3-(三甲氧基矽烷基)丙基〕-2-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔4-(三 甲氧基矽烷基)丁基〕-2-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔(三甲氧基矽烷基)甲基〕-3-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔2-(三甲氧基矽烷基)乙基〕-3-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔3-(三甲氧基矽烷基)丙基〕-3-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔4-(三甲氧基矽烷基)丁基〕-3-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔(三甲氧基矽烷基)甲基〕-4-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔2-(三甲氧基矽烷基)乙基〕-4-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔3-(三甲氧基矽烷基)丙基〕-4-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺、1-〔4-(三甲氧基矽烷基)丁基〕-4-甲基吡啶鎓=雙(三氟甲烷磺醯基)醯亞胺等。 Specific examples of the onium salt (1) include 1,1,1-trimethyl-1-[(trimethoxysilyl) methyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trimethyl-1- [2- (trimethoxysilyl) ethyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trimethyl- 1- [3- (trimethoxysilyl) propyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trimethyl-1- [4- (trimethoxysilane ) Butyl) ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-triethyl-1-[(trimethoxysilyl) methyl] ammonium = bis (trifluoromethane Sulfonyl) fluorenimine, 1,1,1-triethyl-1- [2- (trimethoxysilyl) ethyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1, 1,1-triethyl-1- [3- (trimethoxysilyl) propyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-triethyl-1- [4- (trimethoxysilyl) butyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-tributyl-1-[(trimethoxysilyl) methyl ] Ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-tributyl-1- [2- (trimethoxysilyl) ethyl] ammonium = bis (trifluoromethanesulfonyl) Amidyl) imine 1,1,1-tributyl-1- [3- (trimethoxysilyl) propyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-tributyl -1- [4- (trimethoxysilyl) butyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1-[(trimethoxysilyl) Methyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1- [2- (trimethoxysilyl) ethyl] ammonium = bis (trifluoromethanesulfonyl) Fluorenyl) fluorenimine, 1,1,1-trihexyl-1- [3- (trimethoxysilyl) Propyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1- [4- (trimethoxysilyl) butyl] ammonium = bis (trifluoromethanesulfonyl) Fluorenyl) fluorenimine, 1,1,1-trioctyl-1-[(trimethoxysilyl) methyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1 -Trioctyl-1- [2- (trimethoxysilyl) ethyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trioctyl-1- [3- (Trimethoxysilyl) propyl] ammonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trioctyl-1- [4- (trimethoxysilyl) butyl] Ammonium = bis (trifluoromethanesulfonyl) phosphonium imine, 1,1,1-trimethyl-1-[(trimethoxysilyl) methyl] phosphonium = bis (trifluoromethanesulfonyl) Fluorenimine, 1,1,1-trimethyl-1- [2- (trimethoxysilyl) ethyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1 -Trimethyl-1- [3- (trimethoxysilyl) propyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trimethyl-1- [4 -(Trimethoxysilyl) butyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-triethyl-1-[(trimethoxysilyl) methyl] Phosphonium = double (three Methanesulfonyl) fluorenimine, 1,1,1-triethyl-1- [2- (trimethoxysilyl) ethyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-triethyl-1- [3- (trimethoxysilyl) propyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-triethyl -1- [4- (trimethoxysilyl) butyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-tributyl-1-[(trimethoxysilane (Methyl) methyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-tributyl-1- [2- (trimethoxysilyl) ethyl] phosphonium = bis (Trifluoromethanesulfonyl) Fluorenimine, 1,1,1-tributyl-1- [3- (trimethoxysilyl) propyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1 -Tributyl-1- [4- (trimethoxysilyl) butyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1-[(trimethyl Oxysilyl) methyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1- [2- (trimethoxysilyl) ethyl] phosphonium = Bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trihexyl-1- [3- (trimethoxysilyl) propyl] phosphonium = bis (trifluoromethanesulfonyl) Fluorenimine, 1,1,1-trihexyl-1- [4- (trimethoxysilyl) butyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1- Trioctyl-1-[(trimethoxysilyl) methyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trioctyl-1- [2- (trimethyl Oxysilyl) ethyl] phosphonium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trioctyl-1- [3- (trimethoxysilyl) propyl] phosphonium Onium = bis (trifluoromethanesulfonyl) fluorenimine, 1,1,1-trioctyl-1- [4- (trimethoxysilyl) butyl] phosphonium = bis (trifluoromethanesulfonyl) Base) Amine, 1-methyl-1-[(trimethoxysilyl) methyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-ethyl-1-[(trimethoxysilyl ) Methyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1-[(trimethoxysilyl) methyl] pyrrolium = bis (trifluoromethanesulfonyl) Fluorenimine, 1-butyl-1-[(trimethoxysilyl) methyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-hexyl-1-[(trimethoxysilane (Methyl) methyl] pyrrolidium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1-[(trimethoxysilyl) methyl] pyrrole Onium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [2- (trimethoxysilyl) ethyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimide 1-ethyl-1- [2- (trimethoxysilyl) ethyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1- [2- (trimethoxy Silyl) ethyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-butyl-1- [2- (trimethoxysilyl) ethyl] pyrrolium = bis (trifluoro Methanesulfonyl) fluorenimine, 1-hexyl-1- [2- (trimethoxysilyl) ethyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1 -[2- (trimethoxysilyl) ethyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [3- (trimethoxysilyl) propyl] Pyrrolidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-ethyl-1- [3- (trimethoxysilyl) propyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorene Amine, 1-propyl-1- [3- (trimethoxysilyl) propyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-butyl-1- [3- (trimethyl Oxysilyl) propyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine 1-hexyl-1- [3- (trimethoxysilyl) propyl] pyrrolidium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1- [3- (trimethoxysilane Propyl) propyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [4- (trimethoxysilyl) butyl] pyrrolium = bis (trifluoromethanesulfonyl) Fluorenyl) fluorenimine, 1-ethyl-1- [4- (trimethoxysilyl) butyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1- [4- (trimethoxysilyl) butyl] pyrrolidium = bis (trifluoromethanesulfonyl) fluorenimine, 1-butyl-1- [4- (trimethoxysilyl) butyl] pyrrole Onium = bis (trifluoromethanesulfonyl) fluorenimine, 1-hexyl-1- [ 4- (trimethoxysilyl) butyl] pyrrolium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1- [4- (trimethoxysilyl) butyl] pyrrolium = Bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1-[(trimethoxysilyl) methyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1 -Ethyl-1-[(trimethoxysilyl) methyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1-[(trimethoxysilyl) methyl Group] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-butyl-1-[(trimethoxysilyl) methyl] piperidinium = bis (trifluoromethanesulfonyl) Fluorenimine, 1-hexyl-1-[(trimethoxysilyl) methyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1-[(trimethoxy Silyl) methyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [2- (trimethoxysilyl) ethyl] piperidinium = bis (tri Fluoromethanesulfonyl) fluorenimine, 1-ethyl-1- [2- (trimethoxysilyl) ethyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propane Yl-1- [2- (trimethoxysilyl) ethyl] piperidinium = bis (tri Methanesulfonyl) fluorenimine, 1-butyl-1- [2- (trimethoxysilyl) ethyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-hexyl- 1- [2- (trimethoxysilyl) ethyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1- [2- (trimethoxysilyl) ethyl Yl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [3- (trimethoxysilyl) propyl] piperidinium = bis (trifluoromethanesulfonyl) Yl) fluorenimine, 1-ethyl-1- [3- (trimethoxysilyl) propyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1- [3- (trimethoxysilyl) propyl] piper Pyridinium = bis (trifluoromethanesulfonyl) fluorenimide, 1-butyl-1- [3- (trimethoxysilyl) propyl] piperidinium = bis (trifluoromethanesulfonyl) fluorene Imine, 1-hexyl-1- [3- (trimethoxysilyl) propyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-octyl-1- [3- ( Trimethoxysilyl) propyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-methyl-1- [4- (trimethoxysilyl) butyl] piperidinium = Bis (trifluoromethanesulfonyl) fluorenimine, 1-ethyl-1- [4- (trimethoxysilyl) butyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-propyl-1- [4- (trimethoxysilyl) butyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-butyl-1- [4- (trimethoxy Silyl) butyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-hexyl-1- [4- (trimethoxysilyl) butyl] piperidinium = bis (tri Fluoromethanesulfonyl) fluorenimine, 1-octyl-1- [4- (trimethoxysilyl) butyl] piperidinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [ (Trimethoxysilyl) methyl] pyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [2 -(Trimethoxysilyl) ethyl] pyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [3- (trimethoxysilyl) propyl] pyridinium = bis (trifluoromethane Sulfonyl) fluorenimine, 1- [4- (trimethoxysilyl) butyl] pyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-[(trimethoxysilyl) methyl Group] -2-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [2- (trimethoxysilyl) ethyl] -2-methylpyridinium = bis (trifluoro Methanesulfonyl) fluorenimine, 1- [3- (trimethoxysilyl) propyl] -2-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [4- (three Methoxysilyl) butyl] -2-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-[(trimethoxysilyl) methyl] -3-methylpyridinium = Bis (trifluoromethanesulfonyl) fluorenimine, 1- [2- (trimethoxysilyl) ethyl] -3-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [3- (trimethoxysilyl) propyl] -3-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [4- (trimethoxysilyl) butyl ] -3-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1-[(trimethoxysilyl) methyl] -4-methylpyridinium = bis (trifluoromethanesulfonyl) Yl) fluorenimine, 1- [2- (trimethoxysilyl) ethyl] -4-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [3- (trimethoxy Silyl) propyl] -4-methylpyridinium = bis (trifluoromethanesulfonyl) fluorenimine, 1- [4- (trimethoxysilyl) butyl] -4-methylpyridinium = Bis (trifluoromethanesulfonyl) fluorenimine and the like.

本發明所使用之鎓鹽(1)可依日本特開2010-248165號公報所記載之方法製造。將其代表性方法以下述之反應式1說明。尚,該反應式中,R1、R2、R3、R4、Q、X及n係與前述相同,Z表示鹵素原子,M表示鹼金屬。 The onium salt (1) used in the present invention can be produced by a method described in Japanese Patent Application Laid-Open No. 2010-248165. A typical method will be described by the following reaction formula 1. In this reaction formula, R 1 , R 2 , R 3 , R 4 , Q, X, and n are the same as described above, Z represents a halogen atom, and M represents an alkali metal.

使式(4)表示之胺類(以下稱為胺類(4a))或膦類(以下稱為膦類(4b)),與式(5)表示之烷基鹵化物類(以下稱為烷基鹵化物類(5))進行四級化反應,製造式(6)表示之鎓=鹵化物(以下稱為鎓=鹵化物類(6))。X-為鹵素陰離子時,可將鎓=鹵化物類(6)作為鎓鹽(1)使用。 An amine (hereinafter referred to as an amine (4a)) or a phosphine (hereinafter referred to as a phosphine (4b)) represented by the formula (4) and an alkyl halide (hereinafter referred to as an alkane) represented by the formula (5) Base halides (5)) are subjected to a quaternary reaction to produce onium = halides (hereinafter referred to as onium = halides (6)) represented by the formula (6). X - is a halogen anion time, may be an onium halides = (6) (1) is used as a salt.

其次,可藉由鎓=鹵化物類(6)、與式(7)表示之稱為烷基金屬鹽的離子交換反應,製造鎓鹽(1)。 Next, an onium salt (1) can be produced by an ion exchange reaction with an onium = halide (6) and an alkyl metal salt represented by the formula (7).

作為胺類(4a),可列舉三甲基胺、三乙基胺、三丙基胺、三丁基胺、三戊基胺、三己基胺、三庚基胺、三辛基胺、1-甲基吡咯啶、1-甲基哌啶、1-乙基吡咯啶、1-乙基哌啶、1-丙基吡咯啶、1-丙基哌啶、1-異丙基吡咯啶、1-異丙基哌啶、1-丁基吡咯啶、1-丁基哌啶、1-戊基 吡咯啶、1-戊基哌啶、1-己基吡咯啶、1-己基哌啶、1-甲基-2-甲基吡咯啶、1-甲基-2-甲基哌啶、1-甲基-3-甲基吡咯啶、1-甲基-3-甲基哌啶、1-甲基-4-甲基哌啶、1-甲基-2-乙基吡咯啶、1-甲基-2-丙基吡咯啶、1-甲基-2-異丙基吡咯啶、1-甲基-2-丁基吡咯啶、1-甲基-2-異丁基吡咯啶、1-甲基-2-sec-丁基吡咯啶、1-甲基-2-tert-丁基吡咯啶、吡啶、2-甲基吡啶、3-甲基吡啶、4-甲基吡啶、2-乙基吡啶、3-乙基吡啶、4-乙基吡啶、2-丙基吡啶、3-丙基吡啶、4-丙基吡啶、2-丙基吡啶、3-丙基吡啶、4-丙基吡啶、2-異丙基吡啶、3-異丙基吡啶、4-異丙基吡啶、2-丁基吡啶、3-丁基吡啶、4-丁基吡啶、2-異丁基吡啶、3-異丁基吡啶、4-異丁基吡啶、2-sec-丁基吡啶、3-sec-丁基吡啶、4-sec-丁基吡啶、2-tert-丁基吡啶、3-tert-丁基吡啶、4-tert-丁基吡啶等。 Examples of the amines (4a) include trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, triheptylamine, trioctylamine, 1- Methylpyrrolidine, 1-methylpiperidine, 1-ethylpyrrolidine, 1-ethylpiperidine, 1-propylpyrrolidine, 1-propylpiperidine, 1-isopropylpyrrolidine, 1- Isopropylpiperidine, 1-butylpyrrolidine, 1-butylpiperidine, 1-pentyl Pyrrolidine, 1-pentylpiperidine, 1-hexylpyridine, 1-hexylpiperidine, 1-methyl-2-methylpyridine, 1-methyl-2-methylpiperidine, 1-methyl -3-methylpyrrolidine, 1-methyl-3-methylpiperidine, 1-methyl-4-methylpiperidine, 1-methyl-2-ethylpyridine, 1-methyl-2 -Propylpyrrolidine, 1-methyl-2-isopropylpyrrolidine, 1-methyl-2-butylpyrrolidine, 1-methyl-2-isobutylpyrrolidine, 1-methyl-2 -sec-butyl pyrrolidine, 1-methyl-2-tert-butyl pyrrolidine, pyridine, 2-methylpyridine, 3-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 3- Ethylpyridine, 4-ethylpyridine, 2-propylpyridine, 3-propylpyridine, 4-propylpyridine, 2-propylpyridine, 3-propylpyridine, 4-propylpyridine, 2-isopropyl Pyridine, 3-isopropylpyridine, 4-isopropylpyridine, 2-butylpyridine, 3-butylpyridine, 4-butylpyridine, 2-isobutylpyridine, 3-isobutylpyridine, 4 -Isobutylpyridine, 2-sec-butylpyridine, 3-sec-butylpyridine, 4-sec-butylpyridine, 2-tert-butylpyridine, 3-tert-butylpyridine, 4-tert- Butyl pyridine and the like.

作為膦類(4b),可列舉三甲基膦、三乙基膦、三丙基膦、三丁基膦、三戊基膦、三己基膦、三庚基膦、三辛基膦、1-甲基膦烷、1-甲基磷雜環己烷(Phosphorinane)、1-乙基膦烷、1-乙基磷雜環己烷、1-丙基膦烷、1-丙基磷雜環己烷、1-異丙基膦烷、1-異丙基磷雜環己烷、1-丁基膦烷、1-丁基磷雜環己烷、1-戊基膦烷、1-戊基磷雜環己烷、1-己基膦烷、1-己基磷雜環己烷、1-甲基-2-甲基膦烷、1-甲基-2-甲基磷雜環己烷、1-甲基-3-甲基膦烷、1-甲基-3-甲基磷雜環己烷、1-甲基-4-甲 基磷雜環己烷、1-甲基-2-乙基膦烷、1-甲基-2-丙基膦烷、1-甲基-2-異丙基膦烷、1-甲基-2-丁基膦烷、1-甲基-2-異丁基膦烷、1-甲基-2-sec-丁基膦烷、1-甲基-2-tert-丁基膦烷、三磷雜苯(Phosphorine)、2-甲基三磷雜苯、3-甲基三磷雜苯、4-甲基三磷雜苯、2-乙基三磷雜苯、3-乙基三磷雜苯、4-乙基三磷雜苯、2-丙基三磷雜苯、3-丙基三磷雜苯、4-丙基三磷雜苯、2-丙基三磷雜苯、3-丙基三磷雜苯、4-丙基三磷雜苯、2-異丙基三磷雜苯、3-異丙基三磷雜苯、4-異丙基三磷雜苯、2-丁基三磷雜苯、3-丁基三磷雜苯、4-丁基三磷雜苯、2-異丁基三磷雜苯、3-異丁基三磷雜苯、4-異丁基三磷雜苯、2-sec-丁基三磷雜苯、3-sec-丁基三磷雜苯、4-sec-丁基三磷雜苯、2-tert-丁基三磷雜苯、3-tert-丁基三磷雜苯、4-tert-丁基三磷雜苯等。 Examples of the phosphines (4b) include trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, trioctylphosphine, 1- Methylphosphane, 1-methylphosphaline, 1-ethylphosphane, 1-ethylphosphane, 1-propylphosphane, 1-propylphosphone Alkanes, 1-isopropylphosphorane, 1-isopropylphosphorane, 1-butylphosphorane, 1-butylphosphorane, 1-pentylphosphorane, 1-pentylphosphorane Hexane, 1-hexylphosphane, 1-hexylphosphacyclohexane, 1-methyl-2-methylphosphane, 1-methyl-2-methylphosphacyclohexane, 1-methyl 3-methylphosphorane, 1-methyl-3-methylphosphane, 1-methyl-4-methyl Phosphocyclohexane, 1-methyl-2-ethylphosphane, 1-methyl-2-propylphosphane, 1-methyl-2-isopropylphosphorane, 1-methyl-2 -Butylphosphorane, 1-methyl-2-isobutylphosphorane, 1-methyl-2-sec-butylphosphorane, 1-methyl-2-tert-butylphosphorane, triphosphine Benzene (Phosphorine), 2-methyltriphosphazene, 3-methyltriphosphazene, 4-methyltriphosphazene, 2-ethyltriphosphazene, 3-ethyltriphosphazene, 4-ethyltriphosphazene, 2-propyltriphosphazene, 3-propyltriphosphazene, 4-propyltriphosphazene, 2-propyltriphosphazene, 3-propyltrisphazene Phosphabenzene, 4-propyltriphosphane, 2-isopropyltriphosphane, 3-isopropyltriphosphane, 4-isopropyltriphosphane, 2-butyltriphosphane Benzene, 3-butyltriphosphane, 4-butyltriphosphane, 2-isobutyltriphosphane, 3-isobutyltriphosphane, 4-isobutyltriphosphane, 2-sec-butyltriphosphane, 3-sec-butyltriphosphane, 4-sec-butyltriphosphane, 2-tert-butyltriphosphane, 3-tert-butyl Triphosphene, 4-tert-butyltriphosphane, etc.

作為烷基鹵化物類(5),例如可列舉氯甲基三甲氧基矽烷、2-氯乙基三甲氧基矽烷、3-氯丙基三甲氧基矽烷、4-氯丁基三甲氧基矽烷、氯甲基三乙氧基矽烷、2-氯乙基三乙氧基矽烷、3-氯丙基三乙氧基矽烷、4-氯丁基三乙氧基矽烷、氯甲基三丙氧基矽烷、2-氯乙基三丙氧基矽烷、3-氯丙基三丙氧基矽烷、4-氯丁基三丙氧基矽烷、氯甲基三丁氧基矽烷、2-氯乙基三丁氧基矽烷、3-氯丙基三丁氧基矽烷、4-氯丁基三丁氧基矽烷、溴甲基三甲氧基矽烷、2-溴乙基三甲氧基矽烷、3-溴丙基三甲氧基矽 烷、4-溴丁基三甲氧基矽烷、溴甲基三乙氧基矽烷、2-溴乙基三乙氧基矽烷、3-溴丙基三乙氧基矽烷、4-溴丁基三乙氧基矽烷、溴甲基三丙氧基矽烷、2-溴乙基三丙氧基矽烷、3-溴丙基三丙氧基矽烷、4-溴丁基三丙氧基矽烷、溴甲基三丁氧基矽烷、2-溴乙基三丁氧基矽烷、3-溴丙基三丁氧基矽烷、4-溴丁基三丁氧基矽烷、碘甲基三甲氧基矽烷、2-碘乙基三甲氧基矽烷、3-碘丙基三甲氧基矽烷、4-碘丁基三甲氧基矽烷、碘甲基三乙氧基矽烷、2-碘乙基三乙氧基矽烷、3-碘丙基三乙氧基矽烷、4-碘丁基三乙氧基矽烷、碘甲基三丙氧基矽烷、2-碘乙基三丙氧基矽烷、3-碘丙基三丙氧基矽烷、4-碘丁基三丙氧基矽烷、碘甲基三丁氧基矽烷、2-碘乙基三丁氧基矽烷、3-碘丙基三丁氧基矽烷、4-碘丁基三丁氧基矽烷等。 Examples of the alkyl halide (5) include chloromethyltrimethoxysilane, 2-chloroethyltrimethoxysilane, 3-chloropropyltrimethoxysilane, and 4-chlorobutyltrimethoxysilane. , Chloromethyltriethoxysilane, 2-chloroethyltriethoxysilane, 3-chloropropyltriethoxysilane, 4-chlorobutyltriethoxysilane, chloromethyltripropoxy Silane, 2-chloroethyltripropoxysilane, 3-chloropropyltripropoxysilane, 4-chlorobutyltripropoxysilane, chloromethyltributoxysilane, 2-chloroethyltrisiloxane Butoxysilane, 3-chloropropyltributoxysilane, 4-chlorobutyltributoxysilane, bromomethyltrimethoxysilane, 2-bromoethyltrimethoxysilane, 3-bromopropyl Trimethoxysilicon Alkane, 4-bromobutyltrimethoxysilane, bromomethyltriethoxysilane, 2-bromoethyltriethoxysilane, 3-bromopropyltriethoxysilane, 4-bromobutyltriethane Oxysilane, bromomethyltripropoxysilane, 2-bromoethyltripropoxysilane, 3-bromopropyltripropoxysilane, 4-bromobutyltripropoxysilane, bromomethyltrisilane Butoxysilane, 2-bromoethyltributoxysilane, 3-bromopropyltributoxysilane, 4-bromobutyltributoxysilane, iodomethyltrimethoxysilane, 2-iodoethyl Trimethoxysilane, 3-iodopropyltrimethoxysilane, 4-iodobutyltrimethoxysilane, iodomethyltriethoxysilane, 2-iodoethyltriethoxysilane, 3-iodopropane Triethoxysilane, 4-iodobutyltriethoxysilane, iodomethyltripropoxysilane, 2-iodoethyltripropoxysilane, 3-iodopropyltripropoxysilane, 4 -Iodobutyltripropoxysilane, iodomethyltributoxysilane, 2-iodoethyltributoxysilane, 3-iodopropyltributoxysilane, 4-iodobutyltributoxy Silane, etc.

式(4)表示之胺類或膦類、與烷基鹵化物類(5)的四級化反應亦可使用或不使用溶劑。作為使用溶劑時之溶劑,可列舉甲醇、乙醇、2-丙醇等之醇類、乙腈、乙酸乙酯、四氫呋喃、二甲基甲醯胺等。 The quaternary reaction of the amines or phosphines represented by the formula (4) and the alkyl halides (5) may be performed with or without a solvent. Examples of the solvent used in the solvent include alcohols such as methanol, ethanol, and 2-propanol, acetonitrile, ethyl acetate, tetrahydrofuran, and dimethylformamide.

烷基鹵化物類(5)的使用量,相對於式(4)表示之胺類或膦類1莫耳,只要為0.7莫耳以上即可,較佳為0.9~1.5莫耳。 The amount of the alkyl halide (5) to be used is 0.7 mol or more with respect to 1 mol of the amine or phosphine represented by the formula (4), and preferably 0.9 to 1.5 mol.

作為鹼金屬鹽(7),可列舉雙(三氟甲烷磺醯基)醯亞胺鋰、雙(三氟甲烷磺醯基)醯亞胺鈉、雙(三氟甲烷磺醯基)醯亞胺鉀、四氟硼酸酯鋰、四氟硼酸酯鈉、四氟硼酸酯鉀、六氟磷酸酯鋰、六氟磷酸酯鈉、六 氟磷酸酯鉀等之含氟陰離子的鹼金屬鹽。 Examples of the alkali metal salt (7) include lithium bis (trifluoromethanesulfonyl) fluorenimide, sodium bis (trifluoromethanesulfonyl) fluorenimide, and bis (trifluoromethanesulfonyl) fluorenimide. Potassium, lithium tetrafluoroborate, sodium tetrafluoroborate, potassium tetrafluoroborate, lithium hexafluorophosphate, sodium hexafluorophosphate, six An alkali metal salt of a fluorine-containing anion such as potassium fluorophosphate.

作為形成陰離子之逆向陽離子(Counter cation)的鹼金屬,可列舉鋰、鈉、鉀。 Examples of the alkali metal that forms a counter cation of the anion include lithium, sodium, and potassium.

在離子交換反應之鹼金屬鹽(5)的使用量,相對於鎓=鹵化物類(6)1莫耳,通常為0.8莫耳以上,較佳為0.9~1.2莫耳,更佳為1~1.05莫耳。 The amount of alkali metal salt (5) used in the ion exchange reaction is usually 0.8 mol or more, preferably 0.9 to 1.2 mol, and more preferably 1 to mol relative to 1 mol of onium = halide (6). 1.05 moles.

離子交換反應通常於溶劑中進行。作為溶劑,可列舉丙酮、甲基乙基酮等之酮類、甲醇、乙醇、2-丙醇等之醇類、乙腈、乙酸乙酯、四氫呋喃、二甲基甲醯胺等。使用量雖並未特別限制,但相對於鎓=鹵化物類(6)1質量份,通常為10質量份以下,較佳為1~10質量份,特佳為2~6質量份。 The ion exchange reaction is usually performed in a solvent. Examples of the solvent include ketones such as acetone and methyl ethyl ketone, alcohols such as methanol, ethanol, and 2-propanol, acetonitrile, ethyl acetate, tetrahydrofuran, and dimethylformamide. Although the amount used is not particularly limited, it is usually 10 parts by mass or less, preferably 1 to 10 parts by mass, and particularly preferably 2 to 6 parts by mass, based on 1 part by mass of onium = halide (6).

鎓=鹵化物類(6)、鹼金屬鹽(5)及溶劑的混合順序並未特別限定,可在混合鎓=鹵化物類(6)與溶劑後添加鹼金屬鹽(5),亦可在混合鹼金屬鹽(5)與溶劑後添加鎓=鹵化物類(6)。 The mixing order of onium = halide (6), alkali metal salt (5) and solvent is not particularly limited, and after the onium = halide (6) and solvent are mixed, the alkali metal salt (5) can be added, or After the alkali metal salt (5) and the solvent are mixed, onium = halides (6) are added.

在離子交換反應之反應溫度,通常為10℃以上,較佳為10~60℃,特佳為10~30℃。 The reaction temperature in the ion exchange reaction is usually 10 ° C or higher, preferably 10 to 60 ° C, and particularly preferably 10 to 30 ° C.

從反應結束後之反應液分離鎓鹽(1),係將溶劑及所生成之無機鹽從反應液去除。若能從所得之反應液中析出無機鹽,過濾反應液去除析出之無機鹽,其次適當組合濃縮、過濾、萃取等之單元操作,單離鎓鹽(1)。又,無法從所得之反應液中析出無機鹽時,濃縮反應液使無機鹽析出,以過濾去除無機鹽後,適當組合濃 縮、過濾、萃取等之單元操作,單離鎓鹽(1)。 The onium salt (1) is separated from the reaction liquid after the reaction is completed, and the solvent and the generated inorganic salt are removed from the reaction liquid. If an inorganic salt can be precipitated from the obtained reaction solution, the precipitated inorganic salt can be removed by filtering the reaction solution, and then unit operations such as concentration, filtration, and extraction are appropriately combined to separate the onium salt (1). When an inorganic salt cannot be precipitated from the obtained reaction solution, the reaction solution is concentrated to precipitate the inorganic salt, and the inorganic salt is removed by filtration. Unit operations such as shrinking, filtering, extraction, etc., separate the onium salt (1).

式(2)中,R5表示碳數1~10之烷基、碳數6~10之芳基、碳數7~10之芳烷基、或碳數2~8之烯基。作為R5,具體而言,可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、苯基、萘基、苄基、乙烯基、烯丙基、丁烯基、己烯基、辛烯基等,較佳為甲基、苯基及乙烯基,特佳為甲基及乙烯基。R6表示碳數1~3之烷基,具體而言,可列舉甲基、乙基、丙基等,較佳為甲基及乙基,特佳為甲基。 In formula (2), R 5 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an aralkyl group having 7 to 10 carbon atoms, or an alkenyl group having 2 to 8 carbon atoms. Specific examples of R 5 include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, phenyl, naphthyl, benzyl, and vinyl. , Allyl, butenyl, hexenyl, octenyl, etc., methyl, phenyl and vinyl are preferred, and methyl and vinyl are particularly preferred. R 6 represents an alkyl group having 1 to 3 carbon atoms, and specifically, methyl, ethyl, propyl, and the like are preferred, methyl and ethyl are preferred, and methyl is particularly preferred.

作為三烷氧基矽烷(2)的具體例,可列舉甲基三甲氧基矽烷、乙基三甲氧基矽烷、丙基三甲氧基矽烷、丁基三甲氧基矽烷、戊基三甲氧基矽烷、己基三甲氧基矽烷、庚基三甲氧基矽烷、辛基三甲氧基矽烷、壬基三甲氧基矽烷、癸基三甲氧基矽烷、苯基三甲氧基矽烷、萘基三甲氧基矽烷、苄基三甲氧基矽烷、乙烯基三甲氧基矽烷、烯丙基三甲氧基矽烷、丁烯基三甲氧基矽烷、己烯基三甲氧基矽烷、辛烯基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三乙氧基矽烷、丙基三乙氧基矽烷、丁基三乙氧基矽烷、戊基三乙氧基矽烷、己基三乙氧基矽烷、庚基三乙氧基矽烷、辛基三乙氧基矽烷、壬基三乙氧基矽烷、癸基三乙氧基矽烷、苯基三乙氧基矽烷、萘基三乙氧基矽烷、苄基三乙氧基矽烷、乙烯基三乙氧基矽烷、烯丙基三乙氧基矽烷、丁烯基三乙氧基矽烷、己烯基三乙氧基矽烷、辛烯基三乙氧基矽烷、甲基三丙氧基矽烷、乙基三丙 氧基矽烷、丙基三丙氧基矽烷、丁基三丙氧基矽烷、戊基三丙氧基矽烷、己基三丙氧基矽烷、庚基三丙氧基矽烷、辛基三丙氧基矽烷、壬基三丙氧基矽烷、癸基三丙氧基矽烷、苯基三丙氧基矽烷、萘基三丙氧基矽烷、苄基三丙氧基矽烷、乙烯基三丙氧基矽烷、烯丙基三丙氧基矽烷、丁烯基三丙氧基矽烷、己烯基三丙氧基矽烷、辛烯基三丙氧基矽烷等,較佳為甲基三甲氧基矽烷、乙烯基三甲氧基矽烷。 Specific examples of the trialkoxysilane (2) include methyltrimethoxysilane, ethyltrimethoxysilane, propyltrimethoxysilane, butyltrimethoxysilane, pentyltrimethoxysilane, Hexyltrimethoxysilane, heptyltrimethoxysilane, octyltrimethoxysilane, nonyltrimethoxysilane, decyltrimethoxysilane, phenyltrimethoxysilane, naphthyltrimethoxysilane, benzyl Trimethoxysilane, vinyltrimethoxysilane, allyltrimethoxysilane, butenyltrimethoxysilane, hexenyltrimethoxysilane, octenyltrimethoxysilane, methyltriethoxy Silane, ethyltriethoxysilane, propyltriethoxysilane, butyltriethoxysilane, pentyltriethoxysilane, hexyltriethoxysilane, heptyltriethoxysilane, octyl Triethoxysilane, nonyltriethoxysilane, decyltriethoxysilane, phenyltriethoxysilane, naphthyltriethoxysilane, benzyltriethoxysilane, vinyltriethoxysilane Ethoxysilane, allyltriethoxysilane, butenyltriethoxysilane, hexene Silane triethoxysilane, octenyl triethoxy Silane, methyl tripropoxy Silane, ethyl tripropoxy Oxysilane, propyltripropoxysilane, butyltripropoxysilane, pentyltripropoxysilane, hexyltripropoxysilane, heptyltripropoxysilane, octyltripropoxysilane , Nonyltripropoxysilane, decyltripropoxysilane, phenyltripropoxysilane, naphthyltripropoxysilane, benzyltripropoxysilane, vinyltripropoxysilane, olefin Propyltripropoxysilane, butenyltripropoxysilane, hexenyltripropoxysilane, octenyltripropoxysilane, etc., preferably methyltrimethoxysilane, vinyltrimethoxy Silane.

三烷氧基矽烷(2)可使用市售品,亦可使用由周知的製造方法所製造者。 As the trialkoxysilane (2), a commercially available product may be used, or a product produced by a known production method may be used.

式(3)中,R7表示碳數1~10之烷基、碳數6~10之芳基、或碳數7~10之芳烷基。R7可為相同或相異,作為R7,具體而言,可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、苯基、萘基、苄基等,較佳為甲基及苯基,特佳為甲基。R8表示碳數1~3之烷基,具體而言,可列舉甲基、乙基、丙基等,較佳為甲基及乙基,特佳為甲基。 In the formula (3), R 7 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 10 carbon atoms. R 7 may be the same or different. Specific examples of R 7 include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and phenyl. , Naphthyl, benzyl and the like, methyl and phenyl are preferred, and methyl is particularly preferred. R 8 represents an alkyl group having 1 to 3 carbon atoms. Specific examples thereof include methyl, ethyl, and propyl. Methyl and ethyl are preferred, and methyl is particularly preferred.

作為二烷氧基矽烷(3)的具體例,可列舉二甲基二甲氧基矽烷、二乙基二甲氧基矽烷、二丙基二甲氧基矽烷、甲基乙基二甲氧基矽烷、甲基丙基二甲氧基矽烷、甲基丁基二甲氧基矽烷、甲基戊基二甲氧基矽烷、甲基己基二甲氧基矽烷、甲基庚基二甲氧基矽烷、甲基辛基二甲氧基矽烷、甲基壬基二甲氧基矽烷、甲基癸基二甲氧基矽烷、甲基苯基二甲氧基矽烷、甲基萘基二甲氧基矽 烷、甲基苄基二甲氧基矽烷、二甲基二乙氧基矽烷、二乙基二乙氧基矽烷、二丙基二乙氧基矽烷、甲基乙基二乙氧基矽烷、甲基丙基二乙氧基矽烷、甲基丁基二乙氧基矽烷、甲基戊基二乙氧基矽烷、甲基己基二乙氧基矽烷、甲基庚基二乙氧基矽烷、甲基辛基二乙氧基矽烷、甲基壬基二乙氧基矽烷、甲基癸基二乙氧基矽烷、甲基苯基二乙氧基矽烷、甲基萘基二乙氧基矽烷、甲基苄基二乙氧基矽烷、二甲基二丙氧基矽烷、二乙基二丙氧基矽烷、二丙基二丙氧基矽烷、甲基乙基二丙氧基矽烷、甲基丙基二丙氧基矽烷、甲基丁基二丙氧基矽烷、甲基戊基二丙氧基矽烷、甲基己基二丙氧基矽烷、甲基庚基二丙氧基矽烷、甲基辛基二丙氧基矽烷、甲基壬基二丙氧基矽烷、甲基癸基二丙氧基矽烷、甲基苯基二丙氧基矽烷、甲基萘基二丙氧基矽烷、甲基苄基二丙氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙氧基矽烷、二苯基二丙氧基矽烷等,較佳為二甲基二甲氧基矽烷。 Specific examples of the dialkoxysilane (3) include dimethyldimethoxysilane, diethyldimethoxysilane, dipropyldimethoxysilane, and methylethyldimethoxy. Silane, methylpropyldimethoxysilane, methylbutyldimethoxysilane, methylpentyldimethoxysilane, methylhexyldimethoxysilane, methylheptyldimethoxysilane , Methyloctyldimethoxysilane, methylnonyldimethoxysilane, methyldecyldimethoxysilane, methylphenyldimethoxysilane, methylnaphthyldimethoxysilane Alkane, methylbenzyldimethoxysilane, dimethyldiethoxysilane, diethyldiethoxysilane, dipropyldiethoxysilane, methylethyldiethoxysilane, methyl Propyldiethoxysilane, methylbutyldiethoxysilane, methylpentyldiethoxysilane, methylhexyldiethoxysilane, methylheptyldiethoxysilane, methyl Octyldiethoxysilane, methylnonyldiethoxysilane, methyldecyldiethoxysilane, methylphenyldiethoxysilane, methylnaphthyldiethoxysilane, methyl Benzyldiethoxysilane, dimethyldipropoxysilane, diethyldipropoxysilane, dipropyldipropoxysilane, methylethyldipropoxysilane, methylpropyldisilane Propoxysilane, methylbutyldipropoxysilane, methylpentyldipropoxysilane, methylhexyldipropoxysilane, methylheptyldipropoxysilane, methyloctyldipropyl Oxysilane, methylnonyldipropoxysilane, methyldecyldipropoxysilane, methylphenyldipropoxysilane, methylnaphthyldipropoxysilane, methylbenzyldipropyl oxygen Silane, Silane diphenyl dimethoxysilane, diphenyl diethoxy Silane, diphenyl-dipropoxy Silane like, preferably dimethyl dimethoxysilane Silane.

二烷氧基矽烷(3)可使用市售品,亦可使用由周知的製造方法所製造者。 As the dialkoxysilane (3), a commercially available product may be used, or a product produced by a known production method may be used.

鎓鹽(1)與三烷氧基矽烷(2)與係任意成分之二烷氧基矽烷(3)的共聚合,通常係於鎓鹽(1)與三烷氧基矽烷(2)與係任意成分之二烷氧基矽烷(3)的混合物,添加在使用鎓鹽(1)、三烷氧基矽烷(2)及作為任意成分之二烷氧基矽烷(3)的情況下,為溶解二烷氧基矽烷(3)全部之有機溶劑(例如甲醇、乙醇、異丙 基醇、丙酮等)而成為溶液後,於該溶液滴下成為水解反應觸媒之酸(以下稱為酸(8))或鹼(以下稱為鹼(9))與水來進行。酸(8)或鹼(9)可以水溶液滴下。鎓鹽(1)與三烷氧基矽烷(2)與係任意成分之二烷氧基矽烷(3)的化學計量比,較佳係相對於鎓鹽(1)1莫耳,三烷氧基矽烷(2)0.5~95莫耳、二烷氧基矽烷(3)0~49莫耳,更佳係相對於鎓鹽(1)1莫耳,三烷氧基矽烷(2)0.5~10莫耳、二烷氧基矽烷(3)4~16莫耳,最佳係相對於鎓鹽(1)1莫耳,三烷氧基矽烷(2)0.5~4莫耳、二烷氧基矽烷(3)4~8莫耳。三烷氧基矽烷(2)的化學計量比未達上述範圍時,有損害所得之聚矽氧烷共聚物的耐熱性的情況,另外,三烷氧基矽烷(2)的化學計量比大於上述範圍時,降低該聚矽氧烷共聚物的表面遷移性,將該聚矽氧烷共聚物作為抗靜電劑使用時,恐有無法表現良好抗靜電性之虞。二烷氧基矽烷(3)的化學計量比大於上述範圍時,恐有降低所得之聚矽氧烷共聚物的耐熱性之虞。又,作為其他任意成分,於不損害表現抗靜電性及耐熱性之效果的範圍,可混合單烷氧基矽烷、四烷氧基矽烷進行共聚合。作為單烷氧基矽烷的具體例,可列舉三甲基甲氧基矽烷、乙烯基二甲基甲氧基矽烷、三甲基乙氧基矽烷、乙烯基二甲基乙氧基矽烷、三甲基丙氧基矽烷、乙烯基二甲基丙氧基矽烷等,作為四烷氧基矽烷的具體例,可列舉四甲氧基矽烷、四乙氧基矽烷、四丙氧基矽烷等。 The copolymerization of onium salt (1) with trialkoxysilane (2) and dialkoxysilane (3), which is an optional component, is usually based on onium salt (1) and trialkoxysilane (2) and A mixture of an optional alkoxysilane (3) is dissolved when an onium salt (1), trialkoxy silane (2), and an optional alkoxy silane (3) are added. Dialkoxysilane (3) all organic solvents (e.g. methanol, ethanol, isopropyl Alcohol, acetone, and the like) to form a solution, and an acid (hereinafter referred to as an acid (8)) or a base (hereinafter referred to as a base (9)) and water serving as a hydrolysis reaction catalyst are dropped into the solution and carried out. The acid (8) or base (9) can be dropped in an aqueous solution. The stoichiometric ratio of the onium salt (1) and the trialkoxysilane (2) to the dialkoxysilane (3), which is an optional component, is preferably 1 mol relative to the onium salt (1), and the trialkoxy Silane (2) 0.5 to 95 moles, dialkoxysilane (3) 0 to 49 moles, more preferably 0.5 to 10 moles relative to onium salt (1), and trialkoxysilane (2) Ear, dialkoxysilane (3) 4 to 16 moles, the best is 0.5 to 4 moles, trialkoxysilane (2) 0.5 to 4 moles, compared to onium salt (1), 3) 4 ~ 8 moles. When the stoichiometric ratio of trialkoxysilane (2) is less than the above range, the heat resistance of the obtained polysiloxane copolymer may be impaired. In addition, the stoichiometric ratio of trialkoxysilane (2) is larger than the above. In the range, the surface mobility of the polysiloxane copolymer is decreased, and when the polysiloxane copolymer is used as an antistatic agent, there is a possibility that good antistatic properties may not be exhibited. When the stoichiometric ratio of dialkoxysilane (3) is larger than the above range, there is a possibility that the heat resistance of the obtained polysiloxane copolymer may be lowered. Moreover, as another arbitrary component, a monoalkoxysilane and a tetraalkoxysilane can be mixed and copolymerized within the range which does not impair the effect which exhibits antistatic property and heat resistance. Specific examples of the monoalkoxysilane include trimethylmethoxysilane, vinyldimethylmethoxysilane, trimethylethoxysilane, vinyldimethylethoxysilane, and trimethyl Specific examples of the tetraalkoxysilane include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, and the like.

溶解鎓鹽(1)與三烷氧基矽烷(2)與係任意成分之二烷氧基矽烷(3)之有機溶劑的使用量雖並未特別限制,但通常相對於鎓鹽(1)1質量份,通常為20質量份以下,較佳為0.5~10質量份,特佳為1~5質量份。 Although the amount of the organic solvent used to dissolve the onium salt (1) and trialkoxysilane (2) and the dialkoxysilane (3) which is an optional component is not particularly limited, it is usually relative to the onium salt (1) The mass part is usually 20 parts by mass or less, preferably 0.5 to 10 parts by mass, and particularly preferably 1 to 5 parts by mass.

作為酸(8),例如可列舉鹽酸、硫酸、硝酸、乙酸、對甲苯磺酸一水合物等,特佳為鹽酸。酸(8)的使用量,通常相對於鎓鹽(1)1莫耳為0.001~1莫耳,較佳為0.01~0.2莫耳。 Examples of the acid (8) include hydrochloric acid, sulfuric acid, nitric acid, acetic acid, and p-toluenesulfonic acid monohydrate. Particularly preferred is hydrochloric acid. The amount of the acid (8) to be used is usually 0.001 to 1 mol, preferably 0.01 to 0.2 mol relative to 1 mol of the onium salt (1).

作為鹼(9),例如可列舉氫氧化鈉、氫氧化鉀、氫氧化鋰等。鹼(9)的使用量,通常相對於鎓鹽(1)1莫耳為0.001~1莫耳,較佳為0.01~0.2莫耳。 Examples of the base (9) include sodium hydroxide, potassium hydroxide, and lithium hydroxide. The amount of the base (9) to be used is usually 0.001 to 1 mol, preferably 0.01 to 0.2 mol relative to 1 mol of the onium salt (1).

用在共聚合之水的使用量,通常相對於鎓鹽(1)1莫耳為4~49莫耳。 The amount of water used for copolymerization is usually 4 to 49 moles relative to 1 mole of the onium salt (1).

鎓鹽(1)與三烷氧基矽烷(2)與係任意成分之二烷氧基矽烷(3)的共聚合之反應溫度雖並未特別限制,但通常為10~80℃,較佳為20~40℃。作為反應時間,通常為3小時以上,較佳為3~72小時。 Although the reaction temperature for the copolymerization of the onium salt (1) with trialkoxysilane (2) and the dialkoxysilane (3) which is an arbitrary component is not particularly limited, it is usually 10 to 80 ° C, preferably 20 ~ 40 ℃. The reaction time is usually 3 hours or more, and preferably 3 to 72 hours.

聚矽氧烷共聚物係藉由濃縮經由前述反應所得之反應混合物而得到,所得之聚矽氧烷共聚物如有必要可以未混和之有機溶劑(己烷、庚烷、苯、甲苯等)進行洗淨。 The polysiloxane copolymer is obtained by concentrating the reaction mixture obtained through the aforementioned reaction, and the obtained polysiloxane copolymer can be carried out with an unmixed organic solvent (hexane, heptane, benzene, toluene, etc.) if necessary. Wash.

反應混合物的濃縮溫度雖並未特別限制,但通常為10~120℃,較佳為60~80℃。 Although the concentration temperature of the reaction mixture is not particularly limited, it is usually 10 to 120 ° C, preferably 60 to 80 ° C.

如此進行所得之聚矽氧烷共聚物,藉由捏合於樹脂,可對樹脂賦予抗靜電性能。作為前述樹脂,例如可列舉聚碳酸酯樹脂、丙烯酸樹脂及矽氧樹脂。據此,本發明亦提供包含將上述聚矽氧烷共聚物添加(例如混練)於樹脂之步驟,對樹脂賦予抗靜電性能之方法。進而本發明亦提供上述聚矽氧烷共聚物之作為抗靜電劑,尤其是用以對樹脂賦予抗靜電性能之用。 The obtained polysiloxane copolymer is kneaded with a resin, and can provide antistatic performance to the resin. Examples of the resin include polycarbonate resin, acrylic resin, and silicone resin. Accordingly, the present invention also provides a method including adding (for example, kneading) the above-mentioned polysiloxane copolymer to a resin to impart antistatic properties to the resin. Furthermore, the present invention also provides the above-mentioned polysiloxane copolymer as an antistatic agent, especially for imparting antistatic properties to a resin.

又,將聚矽氧烷共聚物捏合於樹脂時,可加熱熔融來進行混練,或亦可藉由與適當之溶劑(例如二氯甲烷、乙酸乙酯、甲苯等)混合調製溶液後,塗佈該溶液,去除溶劑等之方法,來成型樹脂。光硬化性樹脂的情況,亦可塗佈包含聚矽氧烷共聚物之樹脂或其溶液後,將該塗佈面由紫外線照射使其硬化。 In addition, when the polysiloxane copolymer is kneaded to a resin, it may be heated and melted for kneading, or it may be prepared by mixing with a suitable solvent (for example, dichloromethane, ethyl acetate, toluene, etc.), and then applied. This solution is formed by removing a solvent and the like. In the case of a photocurable resin, a resin containing a polysiloxane copolymer or a solution thereof may be applied, and then the coated surface may be cured by irradiation with ultraviolet rays.

關於相對於聚矽氧烷共聚物之樹脂的添加量,雖並未特別限制,但相對於樹脂1質量份較佳為0.01~1質量%,特佳為0.05~0.5質量%。 Although the amount of the resin added to the polysiloxane copolymer is not particularly limited, it is preferably 0.01 to 1% by mass, and particularly preferably 0.05 to 0.5% by mass based on 1 part by mass of the resin.

〔實施例〕 [Example]

其次,雖將本發明根據實施例進行具體說明,但本發明並非被限定於任何一個者。 Next, although the present invention will be specifically described based on examples, the present invention is not limited to any one.

實施例中,表面電阻率係使用三菱化學股份有限公司製HirestaUP(MCP-HT450),於23±3℃、濕度45±5%的條件下測定。 In the examples, the surface resistivity was measured using HirestaUP (MCP-HT450) manufactured by Mitsubishi Chemical Corporation, under conditions of 23 ± 3 ° C and humidity 45 ± 5%.

又,關於耐熱性評價,使用Seiko Instruments股份有 限公司製TG/DTA 220,於氮氛圍下、10℃/分鐘之昇溫條件所測定之TG-DTA的測定結果中,將減少5%質量時之溫度作為分解溫度。分解溫度為300℃以上時,具有對聚碳酸酯樹脂的可熔融混練之耐熱性評價為「A」,分解溫度未達300℃時,耐熱性不夠充分評價為「C」。 For evaluation of heat resistance, Seiko Instruments Co., Ltd. has TG / DTA 220, manufactured by Tokushima Co., Ltd. In the measurement result of TG-DTA measured under a nitrogen atmosphere and a heating condition of 10 ° C / min, the temperature at which the mass was reduced by 5% was taken as the decomposition temperature. When the decomposition temperature is 300 ° C or higher, the heat resistance with melt-kneading of the polycarbonate resin is evaluated as "A", and when the decomposition temperature is less than 300 ° C, the heat resistance is insufficiently evaluated as "C".

〔製造例1〕 [Manufacturing example 1]

於具備攪拌裝置之500mL玻璃反應器,氮氛圍下,放入二甲基二甲氧基矽烷130.3g(1.1莫耳)、甲基三甲氧基矽烷42.20g(0.31莫耳)、異丙基醇136.3g及由日本特開2010-248165號公報所記載之方法所製造之1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺100.0g(0.15莫耳)。對於所得之混合物,將0.1規定鹽酸30.00g於室溫滴下後,進而,將於室溫攪拌16小時所得之反應混合物以旋轉蒸發儀於80℃下濃縮4小時。將所得之濃縮殘渣以n-己烷272.5g進行2次分液洗淨,進而藉由使用旋轉蒸發儀於80℃濃縮5小時,而得到白色懸濁液體之聚矽氧烷共聚物A120.2g。 In a 500 mL glass reactor equipped with a stirring device and under a nitrogen atmosphere, 130.3 g (1.1 mol) of dimethyldimethoxysilane, 42.20 g (0.31 mol) of methyltrimethoxysilane, and isopropyl alcohol were placed. 136.3 g and 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethane) manufactured by the method described in Japanese Patent Application Laid-Open No. 2010-248165 Sulfonyl) fluorenimine 100.0 g (0.15 mole). About 30.00 g of 0.1 predetermined hydrochloric acid was dripped at the obtained mixture at room temperature, and further, the reaction mixture obtained by stirring at room temperature for 16 hours was concentrated on a rotary evaporator at 80 ° C for 4 hours. The obtained concentrated residue was separated and washed twice with 272.5 g of n-hexane, and further concentrated at 80 ° C. for 5 hours by using a rotary evaporator to obtain a polysilicone copolymer A120.2 g of a white suspension liquid. .

〔製造例2〕 [Manufacture example 2]

除了使用45.90g(0.31莫耳)乙烯基三甲氧基矽烷取代甲基三甲氧基矽烷之外,其他與製造例1同樣進行,而得到白色懸濁液體之聚矽氧烷共聚物B123.10g。 The same procedure as in Production Example 1 was performed except that 45.90 g (0.31 mole) of vinyltrimethoxysilane was used in place of methyltrimethoxysilane to obtain a white suspension liquid polysiloxane copolymer B123.10 g.

〔製造例3〕 [Manufacture example 3]

於具備攪拌裝置之500mL玻璃反應器,氮氛圍下,放入甲基三甲氧基矽烷190.0g(1.40莫耳)、異丙基醇145.0g及由日本特開2010-248165號公報所記載之方法所製造之1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺100.0g(0.15莫耳)。對於所得之混合物,將0.1規定鹽酸39.20g於室溫滴下後,進而,將於室溫攪拌16小時所得之反應混合物以旋轉蒸發儀於80℃下濃縮4小時。將所得之濃縮殘渣以n-己烷290.0g進行2次分液洗淨,進而藉由使用旋轉蒸發儀於80℃濃縮5小時,而得到白色懸濁液體之聚矽氧烷共聚物C139.2g。 In a 500 mL glass reactor equipped with a stirring device, in a nitrogen atmosphere, 190.0 g (1.40 mol) of methyltrimethoxysilane, 145.0 g of isopropyl alcohol, and the method described in Japanese Patent Application Laid-Open No. 2010-248165 The produced 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = 100.0 g (0.15 mole) of bis (trifluoromethanesulfonyl) fluorenimide. About 39.20 g of 0.1 predetermined hydrochloric acid was dripped at the obtained mixture at room temperature, and then the reaction mixture obtained by stirring at room temperature for 16 hours was concentrated on a rotary evaporator at 80 ° C for 4 hours. The obtained concentrated residue was separated and washed twice with 290.0 g of n-hexane, and further concentrated at 80 ° C for 5 hours by using a rotary evaporator to obtain a polysilicone copolymer C139.2 g of a white suspension liquid. .

〔比較製造例1〕 [Comparative Manufacturing Example 1]

於具備攪拌裝置之500mL玻璃反應器,氮氛圍下,放入二甲基二甲氧基矽烷171.3g(1.4莫耳)、異丙基醇135.7g及N-{(3-三乙氧基矽烷基丙基)胺甲醯氧基(Carbamoyloxy)乙基}-N,N,N-三甲基銨=雙(三氟甲烷磺醯基)醯亞胺100.0g(0.16莫耳)。對於所得之混合物,將0.1規定鹽酸28.00g於室溫滴下後,進而,將於室溫攪拌16小時所得之反應混合物以旋轉蒸發儀於80℃下濃縮4小時。將所得之濃縮殘渣以n-己烷271.3g進行2次分液洗淨,進而藉由使用旋轉蒸發儀於80℃濃縮5小時,而得到淡黃色透明液體之聚矽氧烷共聚物D127.1g。 In a 500 mL glass reactor equipped with a stirring device, under a nitrogen atmosphere, 171.3 g (1.4 mol) of dimethyldimethoxysilane, 135.7 g of isopropyl alcohol, and N-{(3-triethoxysilane) Propyl) carbamoyloxyethyl} -N, N, N-trimethylammonium = bis (trifluoromethanesulfonyl) fluorenimine 100.0 g (0.16 mole). The resulting mixture was dropped at room temperature with 28.00 g of 0.1 prescribed hydrochloric acid, and then the reaction mixture obtained by stirring at room temperature for 16 hours was concentrated on a rotary evaporator at 80 ° C. for 4 hours. The obtained concentrated residue was separated and washed twice with 271.3 g of n-hexane, and further concentrated at 80 ° C. for 5 hours by using a rotary evaporator to obtain a polysilicone copolymer D127.1 g of a pale yellow transparent liquid. .

〔實施例1〕 [Example 1]

於50mL之樣品瓶加入聚碳酸酯樹脂(住友陶氏股份有限公司製、Caliber(註冊商標)200-13 NAT)3.2g與二氯甲烷20mL,使聚碳酸酯樹脂溶解以調製聚碳酸酯樹脂之二氯甲烷溶液。於該溶液添加作為抗靜電劑之於製造例1所得之聚矽氧烷共聚物A3.2mg,使其完全溶解後,澆注至模具(縱12cm×橫20cm×深度2cm),於室溫1小時、於40℃ 1小時使其乾燥,製作聚碳酸酯樹脂組成物的試驗片(膜厚0.1±0.02mm)。將所得之試驗片之表面電阻率的測定結果示於表1。 In a 50 mL sample bottle, 3.2 g of polycarbonate resin (made by Sumitomo Dow Co., Ltd., Caliber (registered trademark) 200-13 NAT) and 20 mL of dichloromethane were added to dissolve the polycarbonate resin to prepare the polycarbonate resin. Dichloromethane solution. To this solution, 3.2 mg of the polysiloxane copolymer A obtained in Production Example 1 as an antistatic agent was added to completely dissolve, and then poured into a mold (12 cm in height × 20 cm in width × 2 cm in depth), and the mixture was left at room temperature for 1 hour Then, it was made to dry at 40 degreeC for 1 hour, and the test piece (film thickness 0.1 ± 0.02 mm) of a polycarbonate resin composition was produced. Table 1 shows the measurement results of the surface resistivity of the obtained test pieces.

〔實施例2〕 [Example 2]

除了改使用16mg聚矽氧烷共聚物A之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was produced in the same manner as in Example 1 except that 16 mg of the polysiloxane copolymer A was used instead, and the surface resistivity was measured. The results are shown in Table 1.

〔實施例3〕 [Example 3]

除了改使用32mg聚矽氧烷共聚物A之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was prepared in the same manner as in Example 1 except that 32 mg of the polysiloxane copolymer A was used instead, and the surface resistivity was measured. The results are shown in Table 1.

〔實施例4〕 [Example 4]

除了改使用3.2mg於製造例2所得之聚矽氧烷共聚物 B之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 Instead of using 3.2 mg of the polysiloxane copolymer obtained in Manufacturing Example 2 Other than B, it carried out similarly to Example 1, and produced the test piece of the polycarbonate resin composition, and measured the surface resistivity. The results are shown in Table 1.

〔實施例5〕 [Example 5]

除了改使用16mg聚矽氧烷共聚物B之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was prepared in the same manner as in Example 1 except that 16 mg of the polysiloxane copolymer B was used instead, and the surface resistivity was measured. The results are shown in Table 1.

〔實施例6〕 [Example 6]

除了改使用32mg聚矽氧烷共聚物B之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was produced in the same manner as in Example 1 except that 32 mg of the polysiloxane copolymer B was used instead, and the surface resistivity was measured. The results are shown in Table 1.

〔實施例7〕 [Example 7]

除了改使用32mg於製造例3所得之聚矽氧烷共聚物C之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was produced in the same manner as in Example 1 except that 32 mg of the polysiloxane copolymer C obtained in Production Example 3 was used, and the surface resistivity was measured. The results are shown in Table 1.

〔比較例1〕 [Comparative Example 1]

除了未添加聚矽氧烷共聚物A、B或C之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test piece of a polycarbonate resin composition was produced in the same manner as in Example 1 except that the polysiloxane copolymer A, B, or C was not added, and the surface resistivity was measured. The results are shown in Table 1.

〔比較例2〕 [Comparative Example 2]

除了取代聚矽氧烷共聚物A、B或C,改使用1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 Instead of replacing polysiloxane copolymers A, B or C, use 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethanesulfonyl) A test piece of a polycarbonate resin composition was prepared in the same manner as in Example 1 except for fluoreneimine, and the surface resistivity was measured. The results are shown in Table 1.

〔比較例3〕 [Comparative Example 3]

除了取代聚矽氧烷共聚物A、B或C,改使用於比較製造例1所得之聚矽氧烷共聚物D之外,其他與實施例1同樣進行,製作聚碳酸酯樹脂組成物的試驗片,測定其表面電阻率。將其結果示於表1。 A test for producing a polycarbonate resin composition was performed in the same manner as in Example 1 except that the polysiloxane copolymer A, B, or C was used instead of the polysiloxane copolymer D obtained in Comparative Production Example 1. Sheet, and the surface resistivity was measured. The results are shown in Table 1.

〔實施例8〕 [Example 8]

混合雙季戊四醇六丙烯酸酯(A-DPH:新中村化學工業股份有限公司製)0.50g、季戊四醇三丙烯酸酯(A-TMN-3LM-N:新中村化學工業股份有限公司製)1.50g、三羥甲基丙烷三丙烯酸酯(A-TMPT:新中村化學工業股份有限公司製)0.50g、作為抗靜電劑之於製造例1所得之聚矽氧烷共聚物A0.54g、異丙基醇1.75g、膠態二氧化矽之IPA分散液(IPA-ST:二氧化矽固體含量30質量%、日產化學工業股份有限公司製)3.60g及作為光聚合起始劑之2-羥基-2-甲基苯丙酮0.15g。藉由使用棒塗佈機,以乾燥膜厚成為約5μm的方式,將所得之混合物塗佈於厚度100μm之聚對苯二甲酸乙二酯薄膜的單面後,以積算光量約400mJ/cm2之條件,照射高壓水銀UV燈(120W/cm2)之紫外線於塗膜側,使塗膜硬化,來製作以丙烯酸樹脂硬塗之試驗片。將所得之試驗片硬塗面之表面電阻率的測定結果示於表2。 Mixed dipentaerythritol hexaacrylate (A-DPH: manufactured by Shin Nakamura Chemical Industry Co., Ltd.) 0.50 g, pentaerythritol triacrylate (A-TMN-3LM-N: manufactured by Shin Nakamura Chemical Industry Co., Ltd.) 1.50 g, trihydroxy 0.50 g of methylpropane triacrylate (A-TMPT: manufactured by Shin Nakamura Chemical Industry Co., Ltd.), 0.54 g of polysiloxane copolymer A obtained in Production Example 1 as an antistatic agent, and 1.75 g of isopropyl alcohol 3.60 g of colloidal silica's IPA dispersion (IPA-ST: 30% by mass of silica solid content, manufactured by Nissan Chemical Industries, Ltd.) and 2-hydroxy-2-methyl as a photopolymerization initiator 0.15 g of phenylacetone. The obtained mixture was applied to one side of a polyethylene terephthalate film having a thickness of 100 μm by using a bar coater so that the dry film thickness was approximately 5 μm, and the total light amount was approximately 400 mJ / cm 2 Under the conditions, ultraviolet rays of a high-pressure mercury UV lamp (120 W / cm 2 ) were irradiated to the coating film side to harden the coating film, thereby preparing a test piece hard-coated with an acrylic resin. Table 2 shows the measurement results of the surface resistivity of the hard coated surface of the obtained test piece.

〔實施例9〕 [Example 9]

除了改使用0.54g於製造例2所得之聚矽氧烷共聚物B之外,其他與實施例8同樣進行,製作以丙烯酸樹脂硬塗之試驗片。將所得之試驗片硬塗面之表面電阻率的測定結果示於表2。 A test piece hard-coated with an acrylic resin was produced in the same manner as in Example 8 except that 0.54 g of the polysiloxane copolymer B obtained in Production Example 2 was used instead. Table 2 shows the measurement results of the surface resistivity of the hard coated surface of the obtained test piece.

〔實施例10〕 [Example 10]

除了改使用0.54g於製造例3所得之聚矽氧烷共聚物C之外,其他與實施例8同樣進行,製作以丙烯酸樹脂硬塗之試驗片。將所得之試驗片硬塗面之表面電阻率的測定結果示於表2。 A test piece hard-coated with an acrylic resin was produced in the same manner as in Example 8 except that 0.54 g of the polysiloxane copolymer C obtained in Production Example 3 was used instead. Table 2 shows the measurement results of the surface resistivity of the hard coated surface of the obtained test piece.

〔比較例4〕 [Comparative Example 4]

除了未添加聚矽氧烷共聚物A、B或C之外,其他與實施例8同樣進行,製作以丙烯酸樹脂硬塗之試驗片。將所得之試驗片硬塗面之表面電阻率的測定結果示於表2。 A test piece hard-coated with an acrylic resin was produced in the same manner as in Example 8 except that the polysiloxane copolymer A, B, or C was not added. Table 2 shows the measurement results of the surface resistivity of the hard coated surface of the obtained test piece.

〔比較例5〕 [Comparative Example 5]

除了取代聚矽氧烷共聚物A或B,改使用0.54g 1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺之外,其他與實施例8同樣進行,製作以丙烯酸樹脂硬塗之試驗片。將所得之試驗片硬塗面之表面電阻率的測定結果示於表2。 Instead of replacing polysiloxane copolymer A or B, use 0.54g of 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethanesulfonyl) Except for fluorene imine, the same procedure as in Example 8 was performed to prepare a test piece hard-coated with an acrylic resin. Table 2 shows the measurement results of the surface resistivity of the hard coated surface of the obtained test piece.

〔實施例11〕 [Example 11]

混合甲基丙烯酸甲酯5.00g、偶氮雙異丁腈0.20g及作為抗靜電劑之於製造例1所得之聚矽氧烷共聚物A5mg,將所得之混合物澆注至塑膠容器(內徑5cm×深度1.5cm之圓筒形),於50℃下使其硬化10小時,以製作厚度約2mm之聚甲基丙烯酸甲酯樹脂的試驗片。將所得之試驗片之表面電阻率的測定結果示於表3。 5.00 g of methyl methacrylate, 0.20 g of azobisisobutyronitrile, and 5 mg of the polysiloxane copolymer A obtained in Production Example 1 as an antistatic agent were mixed, and the resulting mixture was poured into a plastic container (inner diameter 5 cm × A cylindrical shape having a depth of 1.5 cm) was cured at 50 ° C. for 10 hours to prepare a test piece of polymethyl methacrylate resin having a thickness of about 2 mm. Table 3 shows the measurement results of the surface resistivity of the obtained test pieces.

〔比較例6〕 [Comparative Example 6]

除了未添加聚矽氧烷共聚物A、B或C之外,其他與實施例11同樣進行,製作聚甲基丙烯酸甲酯樹脂的試驗,測定其表面電阻率。將其結果示於表3。 A test was performed in the same manner as in Example 11 except that the polysiloxane copolymer A, B, or C was not added to prepare a polymethyl methacrylate resin, and the surface resistivity was measured. The results are shown in Table 3.

〔比較例7〕 [Comparative Example 7]

除了取代聚矽氧烷共聚物A、B或C,改使用5mg 1- (3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺之外,其他與實施例11同樣進行,製作聚甲基丙烯酸甲酯樹脂的試驗片,測定其表面電阻率。將其結果示於表3。 Instead of using polysiloxane copolymers A, B or C, use 5 mg 1- Except for (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethanesulfonyl) fluorenimine, the same procedure as in Example 11 was performed to prepare a polyformyl Based on a test piece of a methyl acrylate resin, the surface resistivity was measured. The results are shown in Table 3.

〔實施例12〕 [Example 12]

混合過氧化物硬化型矽氧黏著劑KR-101-10(固體含量60%、信越化學工業股份有限公司製)4.0g、硬化劑BPO0.08g(過氧化苯甲醯)、乙酸乙酯6.2g及作為抗靜電劑之於實施例1所得之聚矽氧烷共聚物A48mg,而得到矽氧樹脂黏著劑。藉由使用棒塗佈機,以乾燥膜厚成為約8μm的方式,將前述矽氧樹脂黏著劑塗佈於聚對苯二甲酸乙二酯薄膜(脫膜紙)的單面,於90℃ 3分鐘、160℃ 2分鐘使其加熱乾燥,來製作矽氧樹脂黏著劑層,測定其表面電阻率。將其結果示於表4。 Mixed peroxide hardened silicone adhesive KR-101-10 (60% solids, manufactured by Shin-Etsu Chemical Industry Co., Ltd.) 4.0 g, 0.08 g of hardener BPO (benzidine peroxide), and 6.2 g of ethyl acetate And as an antistatic agent, 48 mg of the polysiloxane copolymer A obtained in Example 1 was used to obtain a silicone resin adhesive. The above-mentioned silicone resin adhesive was applied to one side of a polyethylene terephthalate film (release film) by using a bar coater so that the dry film thickness became about 8 μm, at 90 ° C. 3 It was dried by heating at 160 ° C for 2 minutes for 2 minutes to prepare a silicone resin adhesive layer, and the surface resistivity was measured. The results are shown in Table 4.

於具有前述黏著劑層之面貼合三乙醯纖維素薄膜(TAC薄膜),以25℃、50%RH進行1小時老化來製作試驗用薄膜。從試驗用薄膜剝離脫膜紙時,將對脫膜紙之 黏著劑的附著狀態以目視進行評價。將其結果示於表4。 A triethyl cellulose cellulose film (TAC film) was laminated on the surface having the adhesive layer, and aged at 25 ° C and 50% RH for 1 hour to prepare a test film. When peeling the release paper from the test film, The adhesion state of the adhesive was evaluated visually. The results are shown in Table 4.

A:無法確認到對脫膜紙之黏著劑的附著。 A: Adhesion to the adhesive of the release paper cannot be confirmed.

B:可確認到對脫膜紙部分之黏著劑的附著。 B: Adhesion of the adhesive to the part of the release paper was confirmed.

C:可確認到對脫膜紙大部分之黏著劑的附著。 C: Adhesion to most of the adhesive of the release paper was confirmed.

〔比較例8〕 [Comparative Example 8]

除了未添加聚矽氧烷共聚物A、B或C之外,其他與實施例12同樣進行,製作矽氧樹脂黏著劑層及試驗用薄膜,測定其表面電阻率的同時,亦將對脫膜紙之黏著劑的附著狀態以目視進行評價。將其結果示於表4。 Except that no polysiloxane copolymer A, B, or C was added, it was performed in the same manner as in Example 12. A silicone resin adhesive layer and a test film were produced, and the surface resistivity was measured. The adhesion state of the paper adhesive was evaluated visually. The results are shown in Table 4.

〔比較例9〕 [Comparative Example 9]

除了取代聚矽氧烷共聚物A、B或C,改使用1-(3-三甲氧基矽烷基丙基)-1,1,1-三丁基磷鎓=雙(三氟甲烷磺醯基)醯亞胺之外,其他與實施例12同樣進行,製作矽氧樹脂黏著劑層及試驗用薄膜,測定其表面電阻率的同時,亦將對脫膜紙之黏著劑的附著狀態以目視進行評價。將其結果示於表4。 Instead of replacing polysiloxane copolymers A, B or C, use 1- (3-trimethoxysilylpropyl) -1,1,1-tributylphosphonium = bis (trifluoromethanesulfonyl) Except for fluorene imine, it was carried out in the same manner as in Example 12. A silicone resin adhesive layer and a test film were produced, and the surface resistivity was measured. At the same time, the state of adhesion to the release paper adhesive was visually checked. Evaluation. The results are shown in Table 4.

Claims (9)

一種聚矽氧烷共聚物,其係共聚合式(1)所示之鎓鹽、與式(2)所示之三烷氧基矽烷、與作為任意成分之式(3)所示之二烷氧基矽烷而得到,式(1):(式中,Q+表示氮陽離子或磷陽離子;R1表示碳數1~3之烷基,R2~R4表示碳數1~8之烷基;R2與R3係於末端彼此鍵結,可形成咯啶環、哌啶環、吡啶環、膦烷環、磷雜環己烷環或三磷雜苯環;惟,R2與R3於末端彼此鍵結形成吡啶環或三磷雜苯環時,R4不存在;X-表示含氟陰離子;n為0~3之整數);式(2):【化2】R5-Si(OR6)3 (2)(式中,R5表示碳數1~10之烷基、碳數6~10之芳基、碳數7~10之芳烷基、或碳數2~8之烯基,R6表示碳數1~3之烷基);式(3):(式中,R7表示碳數1~10之烷基、碳數6~10之芳基、或碳數7~10之芳烷基,R8表示碳數1~3之烷基)。A polysiloxane copolymer copolymerized with an onium salt represented by formula (1), a trialkoxysilane represented by formula (2), and a dioxane represented by formula (3) as an optional component Obtained from oxysilane, formula (1): (In the formula, Q + represents a nitrogen cation or a phosphorus cation; R 1 represents an alkyl group having 1 to 3 carbon atoms; R 2 to R 4 represents an alkyl group having 1 to 8 carbon atoms; R 2 and R 3 are bonded to each other at the ends; Can form a pyridine ring, a piperidine ring, a pyridine ring, a phosphorane ring, a phosphocyclohexane ring, or a triphosphine ring; however, R 2 and R 3 are bonded to each other at the ends to form a pyridine ring or a triphosphorus ring When a heterobenzene ring is present, R 4 does not exist; X - represents a fluorine-containing anion; n is an integer of 0 to 3); Formula (2): [Chem 2] R 5 -Si (OR 6 ) 3 (2) (wherein , R 5 represents an alkyl group having 1 to 10 carbon atoms, aryl group having 6 to 10 carbon atoms, aralkyl group having 7 to 10 carbon atoms, or alkenyl group having 2 to 8 carbon atoms, and R 6 represents 1 to 3 carbon atoms (Alkyl); formula (3): (In the formula, R 7 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 10 carbon atoms, and R 8 represents an alkyl group having 1 to 3 carbon atoms). 如請求項1之聚矽氧烷共聚物,其中,前述式(1)中,Q+為磷陽離子。The polysiloxane copolymer according to claim 1, wherein in the formula (1), Q + is a phosphorus cation. 如請求項1之聚矽氧烷共聚物,其中,前述含氟陰離子為三氟甲烷磺酸陰離子、雙(三氟甲烷磺醯基)醯亞胺陰離子、四氟硼酸酯陰離子或六氟磷酸酯陰離子。The polysiloxane copolymer according to claim 1, wherein the foregoing fluorine-containing anion is a trifluoromethanesulfonic acid anion, a bis (trifluoromethanesulfonyl) fluorenimide anion, a tetrafluoroborate anion, or hexafluorophosphate Ester anion. 如請求項1或2之聚矽氧烷共聚物,其係相對於前述式(1)所示之鎓鹽1莫耳,共聚合前述式(2)所示之三烷氧基矽烷0.5~95莫耳與前述式(3)所示之二烷氧基矽烷0~49莫耳而得到。The polysiloxane copolymer according to claim 1 or 2 copolymerizes 0.5 to 95 of the trialkoxysilane represented by the aforementioned formula (2) with respect to 1 mol of the onium salt represented by the aforementioned formula (1). Mohr is obtained from 0 to 49 moles of the dialkoxysilane represented by the formula (3). 如請求項1或2之聚矽氧烷共聚物,其係相對於前述式(1)所示之鎓鹽1莫耳,共聚合前述式(2)所示之三烷氧基矽烷0.5~95莫耳與前述式(3)所示之二烷氧基矽烷4~49莫耳而得到。The polysiloxane copolymer according to claim 1 or 2 copolymerizes 0.5 to 95 of the trialkoxysilane represented by the aforementioned formula (2) with respect to 1 mol of the onium salt represented by the aforementioned formula (1). Mohr is obtained from 4 to 49 moles of the dialkoxysilane represented by the formula (3). 一種抗靜電劑,其係含有如請求項1~5中任一項之聚矽氧烷共聚物。An antistatic agent comprising the polysiloxane copolymer according to any one of claims 1 to 5. 一種樹脂組成物,其係含有如請求項6之抗靜電劑。A resin composition containing the antistatic agent according to claim 6. 如請求項7之樹脂組成物,其中,前述樹脂組成物係聚碳酸酯樹脂組成物、丙烯酸樹脂組成物或矽氧樹脂組成物。The resin composition according to claim 7, wherein the resin composition is a polycarbonate resin composition, an acrylic resin composition, or a silicone resin composition. 一種如請求項1~5中任一項之聚矽氧烷共聚物的製造方法,其特徵為於鹽酸存在下,共聚合前述式(1)所示之鎓鹽、與前述式(2)所示之三烷氧基矽烷、與作為任意成分之前述式(3)所示之二烷氧基矽烷。A method for producing a polysiloxane copolymer according to any one of claims 1 to 5, which is characterized by copolymerizing an onium salt represented by the aforementioned formula (1) and the compound represented by the aforementioned formula (2) in the presence of hydrochloric acid. And a dialkoxysilane represented by the aforementioned formula (3) as optional components.
TW104111270A 2014-04-21 2015-04-08 Polysiloxane copolymer and antistatic agent and resin composition containing the same TWI657102B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-087134 2014-04-21
JP2014087134 2014-04-21

Publications (2)

Publication Number Publication Date
TW201605933A TW201605933A (en) 2016-02-16
TWI657102B true TWI657102B (en) 2019-04-21

Family

ID=54332211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111270A TWI657102B (en) 2014-04-21 2015-04-08 Polysiloxane copolymer and antistatic agent and resin composition containing the same

Country Status (5)

Country Link
JP (1) JP6179668B2 (en)
KR (1) KR102288085B1 (en)
CN (1) CN106062044B (en)
TW (1) TWI657102B (en)
WO (1) WO2015163040A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6253882B2 (en) * 2012-12-03 2017-12-27 広栄化学工業株式会社 Polysiloxane copolymer having quaternary salt structure and antistatic agent containing the same
WO2018056167A1 (en) * 2016-09-26 2018-03-29 日東電工株式会社 Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheet, and optical member
JP6994149B2 (en) * 2018-05-16 2022-01-14 株式会社スリーボンド Coating film forming composition
CN109438740B (en) * 2018-06-28 2022-10-21 浙江清华柔性电子技术研究院 Preparation method of antistatic silicone rubber
JP6958511B2 (en) * 2018-08-17 2021-11-02 信越化学工業株式会社 Organopolysiloxane compound, a method for producing the same, an antistatic agent containing the same, and a curable composition.
JP6988781B2 (en) * 2018-12-13 2022-01-05 信越化学工業株式会社 Antistatic silicone rubber composition and antistatic carrier plate
KR102378701B1 (en) 2019-04-22 2022-03-24 삼성에스디아이 주식회사 Silicone based adhesive protective film and optical member comprising the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004202925A (en) * 2002-12-26 2004-07-22 Takemoto Oil & Fat Co Ltd Coating liquid for glossy layer of ink jet recording medium, and ink jet recording medium

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1386876A (en) * 1971-10-04 1975-03-12 Dow Corning Bactericidal and fungicidal composition
JP2603291B2 (en) * 1988-04-19 1997-04-23 東芝シリコーン株式会社 Fine powder of silicone resin containing quaternary ammonium group
JP3254018B2 (en) * 1992-10-20 2002-02-04 昭和電工株式会社 Polyorganosilsesquioxane and method for producing the same
CN102124064B (en) * 2008-08-18 2014-09-03 日产化学工业株式会社 Composition for forming silicon-containing resist underlayer film with onium group
JP5628504B2 (en) 2009-03-24 2014-11-19 広栄化学工業株式会社 Onium salt having trialkoxysilylalkyl group
EP2516509B1 (en) * 2009-12-22 2013-10-16 Dow Corning Corporation Water-dispersible silicone resins
KR101137938B1 (en) * 2010-09-01 2012-05-09 (주)밀텍엔지니어링 Silicon-based abrasion coating compositions containing curing catalysts which have condensable functional groups
JP6190572B2 (en) * 2011-06-24 2017-08-30 広栄化学工業株式会社 Onium salt having trialkoxysilylalkyl group
KR102307204B1 (en) * 2012-07-30 2021-10-01 닛산 가가쿠 가부시키가이샤 Composition for forming underlayer film for silicon-containing euv resist and containing onium sulfonate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004202925A (en) * 2002-12-26 2004-07-22 Takemoto Oil & Fat Co Ltd Coating liquid for glossy layer of ink jet recording medium, and ink jet recording medium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARTHA MAJUMDAR et al., Combinatorial Materials Research Applied to the Development of New Surface Coatings XIII: An Investigation of Polysiloxane Antimicrobial Coatings Containing Tethered Quaternary Ammonium Salt Groups , J. Comb. Chem., 2009 , vol. 11(6), p.1115 – 1127。
PARTHA MAJUMDAR ET AL: "Combinatorial Materials Research Applied to the Development of New Surface Coatings XIII: An Investigation of Polysiloxane Antimicrobial Coatings Containing Tethered Quaternary Ammonium Salt Groups", J. COMB. CHEM, vol. 11, no. 6, 2009, pages 1115 - 1127, XP055232678, doi:10.1021/cc900114e *

Also Published As

Publication number Publication date
KR102288085B1 (en) 2021-08-11
WO2015163040A1 (en) 2015-10-29
JP6179668B2 (en) 2017-08-16
JPWO2015163040A1 (en) 2017-04-13
KR20160148513A (en) 2016-12-26
CN106062044A (en) 2016-10-26
TW201605933A (en) 2016-02-16
CN106062044B (en) 2019-11-26

Similar Documents

Publication Publication Date Title
TWI657102B (en) Polysiloxane copolymer and antistatic agent and resin composition containing the same
TWI684617B (en) Polysiloxane copolymer and antistatic agent containing it
CN107001583B (en) Light and hot curing resin composition, solidfied material and laminate
TWI530532B (en) A silicon-containing hardened composition and a hardened product thereof
CN105324407A (en) Active energy ray-curable composition
CN101616961B (en) Silicon-containing compound, curable composition and cured product
JP6016784B2 (en) Active energy ray-curable coating resin composition
JP2010116462A (en) Siloxane polymer, siloxane-based crosslinkable composition and silicone membrane
KR20140133446A (en) Low temperature curable coating composition and article having cured coating thereof
JP6443293B2 (en) Radiation curable silicone composition and method for producing antistatic release film using the same
EP1456251B1 (en) Photocurable organic polymer composition
WO2017057543A1 (en) Photosensitive resin composition, cured film, touch panel, and manufacturing method for touch panel
JP5620151B2 (en) Optical device
JP6042223B2 (en) Negative radiation sensitive resin composition
CN114008113B (en) Resin composition, method for producing same, and multicomponent curable resin composition
KR20150112710A (en) Polysiloxane copolymer and antistatic agent comprising said polysiloxane copolymer
JP2013155231A (en) Ladder-type polysilsesquioxane, method for producing the same, and cured resin-forming composition