WO2015192649A1 - 集成触控功能的有机发光二极管显示装置及其制作方法 - Google Patents

集成触控功能的有机发光二极管显示装置及其制作方法 Download PDF

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WO2015192649A1
WO2015192649A1 PCT/CN2015/070023 CN2015070023W WO2015192649A1 WO 2015192649 A1 WO2015192649 A1 WO 2015192649A1 CN 2015070023 W CN2015070023 W CN 2015070023W WO 2015192649 A1 WO2015192649 A1 WO 2015192649A1
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organic light
layer
emitting diode
light emitting
infrared
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PCT/CN2015/070023
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English (en)
French (fr)
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谢志生
苏君海
黄亚清
李建华
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信利（惠州）智能显示有限公司
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Priority to US15/319,148 priority Critical patent/US10488962B2/en
Publication of WO2015192649A1 publication Critical patent/WO2015192649A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0428—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by sensing at the edges of the touch surface the interruption of optical paths, e.g. an illumination plane, parallel to the touch surface which may be virtual
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Definitions

  • the present invention relates to the field of touch display technology, and more particularly to an organic light emitting diode display device with integrated touch function and a method for fabricating the same.
  • touch screens are increasingly easy to use, robust, fast-responding, and space-saving, making system designers feel more and more comfortable using touch screens. Sex.
  • a common optical touch screen is an infrared touch screen.
  • the infrared touch screen uses an infrared matrix densely arranged in the X and Y directions to detect and position the user's touch position.
  • the existing infrared touch screen is provided with a circuit board outer frame on the front side of the display, and the circuit board arranges the infrared transmitting tube 11 and the infrared receiving tube 12 on the four sides of the screen, and the infrared transmitting tube 11 and the infrared receiving tube 12 are one by one.
  • the inventors have found that although infrared touch screen technology has been appearing for a long time, the infrared touch screen has a large volume and high production cost, which affects the development of infrared touch technology.
  • the present invention provides an organic light emitting diode display device in which an infrared light emitting unit and an infrared receiving unit are integrated in a display, and a manufacturing method thereof, to reduce the volume and production cost of the infrared touch screen.
  • the present invention provides the following technical solutions:
  • An organic light emitting diode display device with integrated touch function includes a plurality of pixel units, each of which includes:
  • the substrate being divided into a display area and a detection area
  • each of the organic light emitting diode elements including: a first transistor, a second transistor, a storage capacitor, a first electrode layer electrically connected to the second transistor, and a location An organic light-emitting layer on the first electrode layer, a second electrode layer on a surface of the organic light-emitting layer;
  • An infrared light detecting element located in the substrate detecting area includes: a third transistor, an infrared light detecting unit electrically connected to the third transistor, wherein the infrared light detecting unit includes infrared light detecting first An electrode, an infrared light sensing layer connected to the infrared light detecting first electrode, and an infrared light detecting second electrode connected to the infrared light sensing layer;
  • the plurality of organic light emitting diode elements include at least one of a red organic light emitting diode element and a blue organic light emitting diode element, an infrared light organic light emitting diode element, and a green light organic light emitting diode element.
  • the material system of the infrared sensing layer of the infrared light detecting unit is cadmium zinc cadmium mercury, aluminum gallium indium arsenic, indium gallium arsenide phosphorus, aluminum gallium indium phosphorus, indium gallium arsenide, aluminum gallium arsenide. Any of the tethered or silicon germanium systems.
  • the infrared light detecting unit is configured by any one of a PIN photodiode, a heterojunction phototransistor, an avalanche photodiode, a quantum well infrared detector, a quantum cascade infrared detector, and a superlattice infrared detector. .
  • the organic light-emitting layer material in the infrared light-emitting organic light-emitting diode element is a trivalent linear rare metal compound.
  • the organic light-emitting layer material in the infrared light-emitting organic light-emitting diode element is Ir(III) Compound.
  • each pixel unit includes a red organic light emitting diode element, a blue organic light emitting diode element, a green light organic light emitting diode element, and an infrared light organic light emitting diode element, and the red light organic light emitting diode element and the green organic light emitting element
  • the diode elements and the blue organic light emitting diode elements are arranged in an RGB strip arrangement.
  • each pixel unit includes a red organic light emitting diode element, a blue organic light emitting diode element, a green light organic light emitting diode element, and an infrared light organic light emitting diode element, and the red light organic light emitting diode element and the green organic light emitting element
  • the arrangement of the diode element and the blue organic light emitting diode element is RGB staggered.
  • the present invention also provides a method for manufacturing an organic light emitting diode display device with integrated touch function, including:
  • the substrate includes at least one pixel area, and each pixel area is divided into a display area and a detection area;
  • first conductive film Forming a first conductive film on the second transistor, patterning the first conductive film to form a first electrode layer of the organic light emitting diode element, the first electrode layer is located in the display area, and is connected to the first Two transistors
  • Forming an infrared light sensing film on the third transistor patterning the infrared light sensing film to form an infrared light sensing layer, the infrared light sensing layer is located in the detection area, and is connected to the third transistor;
  • the specific steps of forming the first transistor, the second transistor, and the third transistor are:
  • the protective layer is etched to form a plurality of second holes on the patterned source or drain conductive layer.
  • the organic light emitting layer comprises a red light emitting layer, a green light emitting layer, a blue light emitting layer and an infrared light emitting layer, and the forming the patterned organic light emitting layer on the first electrode layer is performed by evaporation Process or printing process.
  • the first conductive film is a transparent conductive film
  • the second conductive film is a metal conductive film
  • the first conductive film is a metal conductive film
  • the second conductive film is a transparent conductive film
  • the organic light emitting diode display device with integrated touch function integrates an infrared light emitting organic light emitting diode element for emitting infrared light and receiving infrared light in each pixel of the OLED display panel.
  • the infrared light detecting element when the pixel of the OLED display panel is normally displayed, the infrared light organic light emitting diode in the pixel also emits light at the same time, and when the finger or other object approaches the pixel, the infrared light emitted by the infrared light organic light emitting diode is reflected to On the infrared light detecting unit in the pixel, the infrared light detecting unit is turned on after receiving the infrared light, thereby determining the position of the touch and realizing the display and touch functions.
  • the infrared light-emitting organic light-emitting diode element and the infrared light detecting element in the organic light-emitting diode display device with integrated touch function provided in the present invention are both red light organic light emitting diode elements and green light emitting diode elements in the OLED display panel.
  • the blue OLED element is formed at the same time, that is, the infrared OLED element and the infrared ray detecting element are integrated inside the OLED display panel, and the circuit board is added outside the display in the prior art, and the infrared emitting tube and the infrared are further disposed.
  • the organic light emitting diode display device with integrated touch function provided by the present invention is smaller in size.
  • the present invention also provides a method for fabricating the above-mentioned integrated touch function OLED display device, which only needs to change lithography in the process of fabricating red photo sub-pixels, green photo sub-pixels and blue sub-pixels of the OLED display panel.
  • the pattern or the structure of the film layer can be increased without adding an external circuit board, a plurality of infrared transmitting tubes and a plurality of infrared receiving tubes, thereby saving the manufacturing cost of the infrared touch screen.
  • FIG. 1 is a diagram of a display device with an infrared touch function in the prior art
  • FIG. 2 is a schematic cross-sectional view of an OLED display device with integrated touch function provided by the present invention
  • FIG. 3 is a schematic diagram of an operation of an OLED display device with integrated touch function according to the present invention.
  • FIG. 4 is a sub-pixel arrangement diagram of a pixel unit of an OLED display device with integrated touch function according to the present invention
  • FIG. 5 is a sub-pixel arrangement diagram of another pixel unit of an OLED display device with integrated touch function according to the present invention.
  • FIG. 6 is a schematic diagram of a method for fabricating an OLED display device with integrated touch function according to the present invention.
  • FIG. 7 to FIG. 9 are partial process flowcharts of an integrated touch function OLED display device provided by the present invention.
  • the infrared touch screen of the prior art has a large volume and a high production cost, which seriously affects the development of the infrared touch technology.
  • the inventors have found that the above phenomenon occurs because the infrared touch screen of the prior art is formed by two independent systems of a display and an infrared touch, including a display and a display outside the display. a plurality of infrared transmitting tubes and a plurality of infrared receiving tubes, on the one hand, because the display is separated from the circuit board for realizing infrared touch, the infrared touch screen is bulky; on the other hand, the circuit board needs to be fixed on the periphery of the display. Devices such as infrared emission tubes and infrared receiving tubes cause high production costs.
  • an organic light emitting diode display device with integrated touch function includes a plurality of pixel units, and each pixel unit includes:
  • the substrate being divided into a display area and a detection area
  • each of the organic light emitting diode elements including: a first transistor, a second transistor, a storage capacitor, a first electrode layer electrically connected to the second transistor, and a location An organic light-emitting layer on the first electrode layer, a second electrode layer on a surface of the organic light-emitting layer;
  • An infrared light detecting element located in the substrate detecting area includes: a third transistor, an infrared light detecting unit electrically connected to the third transistor, wherein the infrared light detecting unit includes infrared light detecting first An electrode, an infrared light sensing layer connected to the infrared light detecting first electrode, and an infrared light detecting second electrode connected to the infrared light sensing layer;
  • the plurality of organic light emitting diode elements include at least one of a red organic light emitting diode element and a blue organic light emitting diode element, an infrared light organic light emitting diode element, and a green light organic light emitting diode element.
  • the OLED display device integrateds an organic light emitting diode element capable of emitting infrared light and an infrared light detecting unit capable of receiving infrared light, thereby replacing the infrared light emitting tube and the infrared light in the prior art.
  • the receiving tube enables the OLED display device to have an infrared touch function, and the infrared light organic light emitting diode element and the infrared light detecting unit are integrated in the OLED display device to occupy a small volume.
  • the organic light emitting diode display device with integrated touch function provided by the present invention and a manufacturing method thereof are specifically described below through several embodiments.
  • An embodiment of the present invention discloses an organic light emitting diode display device with integrated touch function, including a plurality of pixel units, and each of the pixel units includes: a substrate, the substrate is divided into a display area and a detection area; a plurality of organic light emitting diode elements in the substrate display region, each of the organic light emitting diode elements including: a first transistor, a second transistor, a storage capacitor, and a first electrode layer electrically connected to the second transistor, located at the An organic light-emitting layer on an electrode layer, a second electrode layer on a surface of the organic light-emitting layer; an infrared light detecting element located in the substrate detecting region, the infrared light detecting element comprising: a third transistor, and the first An infrared light detecting unit electrically connected to the three transistors, the infrared light detecting unit comprising an infrared light detecting first electrode, an infrared light sensing layer connected to the infrared light detecting first
  • an organic light emitting diode element and an infrared light detecting unit of one of the pixel units of the organic light emitting diode display device with integrated touch function provided by the embodiment are provided.
  • the organic light emitting diode element is disposed on the display area 101A on the substrate 101.
  • the organic light emitting diode element includes a first transistor T1, a second transistor T2, a storage capacitor C, and an organic light emitting diode structure 102.
  • the organic light emitting diode structure 102 further includes a first electrode layer 102a electrically connected to the second transistor T2, an organic light emitting layer 102b on the first electrode layer 102a, and a second electrode layer 102c on the surface of the organic light emitting layer 102b.
  • the OLED display device in this embodiment may be a top emission type OLED display device or a bottom emission type OLED display device, which is not limited in this embodiment.
  • the first electrode layer 102a is a metal conductive material having high reflectivity, and the material thereof may be platinum (Pt), palladium (Pd), iridium (Ir), gold. (Au), tungsten (W), nickel (Ni), silver (Ag) or aluminum (Al), and the second electrode layer is a transparent electrode, and the transparent electrode material may be indium tin oxide A thin film of a transparent conductive material such as ITO) or indium zinc oxide (IZO). At this time, light emitted from the light emitting layer of the OLED is emitted in the direction of the first electrode layer 102a toward the second electrode layer 102c.
  • the first electrode layer 102a is a transparent electrode layer
  • the second electrode layer 102c is a high-reflectivity metal conductive layer, so that the light emitted from the OLED light-emitting layer can be
  • the two electrode layer 102c is emitted toward the first electrode layer 102a to form a bottom emission type OLED.
  • the organic light emitting layer 102b in the organic light emitting diode structure 102 in this embodiment may be any one of a red organic light emitting layer, a green organic light emitting layer, a blue organic light emitting layer, and an infrared light organic light emitting layer.
  • the organic light-emitting layer emitting red, green, and blue light, the light-emitting layer material in this embodiment may be the same as the organic light-emitting layer material in the prior art.
  • a trivalent linear rare metal compound is preferable in the present embodiment, and an Ir(III) compound is more preferable.
  • the infrared light organic light emitting layer material is not limited to the above-mentioned trivalent linear rare metal compound, and may also be other substances capable of emitting infrared light, and is not performed here. Narration.
  • the first transistor T1 of the organic light emitting diode element functions as a switching transistor
  • the second transistor T2 functions as a driving transistor
  • the source of the first transistor T1 is connected to the data line, and the gate thereof is connected to the gate.
  • the drain line has a drain connected to one end of the capacitive element and a gate of the second transistor.
  • the source of the second transistor T2 is connected to the first electrode layer 102a of the OLED structure 102.
  • the first electrode layer 102a is an anode of the OLED structure.
  • the detection area of the OLED display device in this embodiment further includes an infrared light detecting unit 103, and the infrared light detecting unit is configured to detect infrared light.
  • the infrared light detecting unit includes The third transistor T3 is an infrared light detecting unit electrically connected to the third transistor T3, and the infrared light detecting unit includes an infrared light detecting first electrode 103a, an infrared light sensing layer 103b connected to the infrared light detecting first electrode 103a, and The infrared light connected to the infrared light sensing layer 103b detects the second electrode 103c.
  • the third transistor T3 is a read transistor.
  • the infrared light detecting unit When the infrared light is irradiated onto the infrared light detecting unit, the infrared light detecting unit is turned on to generate a detection signal, and is transmitted to the detecting signal line in the peripheral circuit by the third transistor T3. In turn, the OLED infrared light touch function is realized.
  • the material system of the infrared sensing layer in the infrared light detecting unit is cadmium zinc cadmium mercury, aluminum gallium indium arsenic, indium gallium arsenide phosphorus, aluminum gallium indium phosphorus, indium gallium arsenide, aluminum gallium arsenide Or any of the silicon germanium systems.
  • the structure of the infrared light detecting unit is any one of a PIN photodiode, a heterojunction phototransistor, an avalanche photodiode, a quantum well infrared detector, a quantum cascade infrared detector, and a superlattice infrared detector.
  • the working principle diagram of the OLED display device provided in the embodiment includes a red organic light emitting diode element 112, a green organic light emitting diode element 122, and a blue organic light emitting diode in the pixel unit in the OLED display device.
  • the component 132, the infrared light-emitting organic light-emitting diode component 142, and the infrared light detecting unit 143 when the infrared light-emitting diode structure is controlled by the peripheral circuit to emit infrared light, click a display screen with a finger or other object at a certain pixel unit position of the OLED display device.
  • the infrared light emitted by the infrared light-emitting organic light-emitting diode element 142 in the clicked pixel unit is reflected into the infrared light detecting unit 143 in the pixel, and the infrared light detecting unit 143 receives the infrared light and absorbs the infrared light of a specific wavelength.
  • the electrodes at both ends of the infrared light detecting unit 143 are turned on, thereby determining that the pixel has been touch-selected, thereby implementing an infrared light touch function.
  • the pixel units in the OLED display device in the embodiment include red, green and blue primary color sub-pixels, infrared photo sub-pixels and infrared light detecting units, that is, each pixel unit includes a red organic light emitting diode element. , a blue light organic light emitting diode element, a green light organic light emitting diode element, an infrared light organic light emitting diode element, and an infrared light detecting unit.
  • the arrangement of the red organic light emitting diode element, the green organic light emitting diode element, and the blue organic light emitting diode element, the red organic light emitting diode element, the green organic light emitting diode element, and the blue organic light emitting diode element are not limited.
  • the arrangement may be in the form of RGB strips or RGB staggered.
  • the relative positions of the infrared light organic light emitting diode element, the infrared light detecting unit, and the RGB three primary color organic light emitting diode elements are not limited, and the arrangement manner thereof may be As shown in FIG.
  • the infrared light emitting organic light emitting diode element and the infrared light detecting unit are located on one side of the red organic light emitting diode element, the blue organic light emitting diode element, and the green organic light emitting diode element, and may also be an infrared light organic light emitting diode.
  • the components and the infrared light detecting unit are respectively located on both sides of the three primary color organic light emitting diode elements, or other arrangement and combination, as shown in FIG. 4 and FIG. 5, which is not limited in this embodiment.
  • an OLED display device with integrated touch function includes a plurality of pixel units, and each pixel unit is divided into a display area and a detection area, and the display area of each pixel unit includes the existing
  • an infrared light organic light emitting diode element is further included, and the detection area includes an infrared light detecting unit.
  • the infrared light emitted by the infrared light organic light emitting diode element can be reflected to the infrared light detecting unit, and when the infrared light detecting unit receives the infrared light, the two electrodes thereof The conduction is performed to determine the position of the touch, and the infrared light touch function is realized.
  • the OLED display device integrateds an organic light emitting diode element capable of emitting infrared light and an infrared light detecting unit capable of receiving infrared light, thereby replacing the infrared light emitting tube and the infrared light receiving tube in the prior art.
  • the OLED display device has an infrared touch function, and the infrared light organic light emitting diode element and the infrared light detecting unit are integrated in the OLED display device to occupy a small volume.
  • Another embodiment of the present invention discloses a method for fabricating an organic light emitting diode display device with integrated touch function.
  • the manufacturing method of the manufacturing method is as shown in FIG. 6 and includes:
  • Step S101 providing a substrate
  • the substrate is a transparent substrate.
  • the substrate is a glass substrate, and the substrate includes at least one pixel area, and each pixel area is divided into a display area and a detection area.
  • a black matrix layer is also required to be formed on the substrate, and the black matrix layer is used to block opaque components in the OLED display device.
  • Step S102 forming a first transistor and a second transistor in a display region of each pixel region, and forming an infrared detecting first electrode and an infrared detecting second electrode of the third transistor and the detecting unit in the detecting region of each pixel region.
  • the first transistor, the second transistor, and the third transistor may each preferably be a thin film transistor, and the thin film transistor may be a polysilicon thin film transistor, an amorphous silicon thin film transistor, or an oxide film.
  • the transistor is not limited in this embodiment. In the present embodiment, a description will be given of a case where the first transistor, the second transistor, and the third transistor are both polysilicon thin film transistors.
  • a polysilicon layer is formed on the substrate 101, and patterned in a display region and a detection region on the substrate by a process such as masking or etching.
  • a polysilicon layer masking a portion of the polysilicon layer with a mask, doping the exposed portion, forming source and drain regions (source region S1 and drain region D1 of the first transistor T1, source region S2 and drain of the second transistor T2) a region D2, a source region S3 and a drain region D3) of the third transistor T3, and may also form one electrode 104a of the capacitor; deposit an insulating material to form a gate insulating layer 105 covering the patterned polysilicon layer and the substrate; And depositing a gate material on the gate insulating layer 105 to form a gate layer, and respectively forming a gate layer on the surface of the gate insulating layer above each polysilicon layer by a process such as masking or etching.
  • a gate electrode (G1, G2, G3 shown in the figure), and another electrode 104b forming a capacitor; an interlayer insulating layer 106 is formed on the formed gate electrode and the gate insulating layer 105; an etching layer Inter-insulating layer 106 and gate insulating layer 105, thereby forming a plurality of first holes on the plurality of source or drain regions; depositing a conductive layer on the interlayer insulating layer forming the first holes, through the mask, Etching, patterning the conductive layer to form a patterned source or drain conductive layer 107 on the plurality of first holes and a portion of the interlayer insulating layer, and detecting the first electrode by infrared light 103a and infrared light detecting second electrode 103c; finally forming a protective layer 108 on the patterned source or drain conductive layer and the interlayer insulating layer; etching the protective layer at the patterned source or A plurality of second holes 109 are formed on the drain conductive layer to electrically connect the
  • the infrared detecting first electrode and the infrared detecting second electrode of the infrared light detecting unit are formed simultaneously with the source conductive layer and the drain conductive layer, and are formed by processes such as deposition, masking and etching. It will not be detailed in the examples. Moreover, the material of the infrared detecting first electrode and the infrared detecting second electrode of the infrared light detecting unit may be the same as the material of the source/drain conductive layer, and may be different in other embodiments.
  • the capacitor element, the first thin film transistor, the second thin film transistor and the third thin film transistor can be formed together on the substrate, wherein the first thin film transistor and the second thin film transistor are located in the display area
  • the switch can be used as a switching thin film transistor (switch TFT) and a driving thin film transistor (drive TFT), respectively, and the third thin film transistor is located in the detection region and can be used as a readout TFT.
  • the first, second, and third thin film transistors of this embodiment are low temperature polycrystalline silicon (LTPS) thin film transistors, but the present invention is not limited thereto.
  • Step S103 forming a first conductive film on the second transistor, patterning the first conductive film to form a first electrode layer of the organic light emitting diode element, the first electrode layer is located in the display area, and is connected to The second transistor.
  • a first conductive film is formed on a protective layer on the source/drain conductive layer of the second transistor by a process such as masking, etching, or the like, and the first conductive film passes through the second hole in step S102. 109 is connected to the drain D2 of the second transistor. At the same time, the first conductive film is patterned to form the first electrode layer 102a of the organic light emitting diode element.
  • the first electrode layer may be a transparent conductive material or a metal material having high reflectivity, that is, the first conductive film is transparent conductive.
  • the film or the metal conductive film is not limited in this embodiment.
  • Step S104 forming an infrared light sensing film on the third transistor; patterning the infrared light sensing film to form an infrared light sensing layer, the infrared light sensing layer is located in the detection area, and is connected to the third transistor .
  • an infrared light sensing film is formed simultaneously with the first electrode layer of the organic light emitting diode element, and the infrared light sensing film is patterned by a process such as masking or etching to form infrared light.
  • the sensing layer 103b is electrically connected to the gate G3 of the third transistor through the infrared detecting first electrode 103a.
  • the material system of the infrared light sensing film is cadmium zinc cadmium mercury, aluminum gallium indium arsenic, indium gallium arsenide phosphorus, aluminum gallium indium phosphorus, indium gallium arsenide, aluminum gallium arsenide Or any of the silicon germanium systems.
  • Step S105 forming a dielectric layer on the area outside the first electrode layer of the display area and on the infrared light sensing layer of the detection area;
  • a dielectric layer is formed on a region outside the first electrode in the display region, that is, on a non-first electrode layer of the display region to protect other devices of the display region;
  • a dielectric layer is formed on the infrared light sensing layer of the region, and the dielectric layer covers the infrared light sensing layer to protect the infrared light sensing layer.
  • Step S106 forming a patterned organic light-emitting layer on the first electrode layer
  • the organic light emitting layer includes a red light emitting layer, a green light emitting layer, a blue light emitting layer, and an infrared light emitting layer, and the organic light emitting layer is formed by an evaporation process or a printing process.
  • the material of the organic light-emitting layer is different according to the light-emitting color of the sub-pixels in each pixel unit.
  • the material of the organic light-emitting layer is a trivalent linear rare metal compound.
  • the material of the organic light-emitting layer of the red organic light emitting diode element, the green organic light emitting diode element, and the blue organic light emitting diode element is not limited in this embodiment.
  • Step S107 forming a second conductive film on the patterned organic light-emitting layer and the dielectric layer, patterning the second conductive film to form a second electrode layer, and the second electrode layer is located in the patterned organic layer On the light emitting layer, the second electrode layer forms an organic light emitting diode structure with the organic light emitting layer and the first electrode layer.
  • a hole transport layer (or an electron transport layer) is further included between the first electrode layer and the organic light emitting layer, and an electron transport layer is further included between the second electrode layer and the organic light emitting layer.
  • the hole transport layer may be a layer of NPB (organic molecular material containing nitrogen element), which is not limited in this embodiment.
  • each of the pixel units includes a plurality of illuminating sub-pixels.
  • only one of the illuminating sub-pixels is taken as an example for description.
  • a plurality of illuminating sub-pixels in each pixel unit are simultaneously formed, and the same process manufacturing process will not be described in this embodiment.
  • a protective layer (not shown) may be formed to cover the second electrode layer and the dielectric layer, and the protective layer may be silicon oxide formed by deposition or spin coating and/or Silicon nitride layer.
  • the manufacturing method of the organic light emitting diode display device with integrated touch function provided in the embodiment in the process of fabricating the OLED display device in the prior art, due to the manufacturing process of the infrared light organic light emitting diode device and the three primary colors in the prior art
  • the fabrication process of the organic light emitting diode device is the same, and the fabrication of the infrared light detecting unit can also be compatible in the fabrication process of the OLED display device.
  • the OLED display device provided in this embodiment is fabricated, only the lithographic pattern or the film layer is changed.
  • the structure can be completed without adding an external circuit board, a plurality of infrared transmitting tubes and a plurality of infrared receiving tubes, thereby saving the manufacturing cost of the infrared touch screen.
  • the OLED display device provided in the embodiment integrates the infrared light emitting device and the infrared light receiving device without increasing the volume of the OLED display device, thereby realizing Infrared touch function.

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Abstract

提供了一种集成触控功能的有机发光二极管显示装置及其制作方法。显示装置包括多个像素单元，每个像素单元包括显示区域（101A）和探测区域（101B），位于显示区域（101A）的多个有机发光二极管元件和位于探测区域的红外光探测元件，其中多个有机发光二极管元件包括红光有机发光二极管元件和蓝光有机发光二极管元件中的至少一个、红外光有机发光二极管元件和绿光有机发光二极管元件。集成触控功能的有机发光二极管显示装置相对于现有技术中的红外触摸装置体积更小。

Description

集成触控功能的有机发光二极管显示装置及其制作方法
本申请要求于2014年06月16日提交中国专利局、申请号为201410268262.6、发明名称为“集成触控功能的有机发光二极管显示装置及其制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及触控显示技术领域，更具体的说是涉及集成触控功能的有机发光二极管显示装置及其制作方法。
背景技术
随着电脑、手机等移动终端作为信息来源的发展，触摸屏以其易于使用、坚固耐用、反应速度快、节省空间等优点，使得系统设计师们越来越多的感到使用触摸屏具有相当大的优越性。
随着电容式触摸屏的成功，人机交互已经离不开显示器的触控功能。为了更低成本和更方便的实现显示器的触摸，业界一直在寻求显示和触摸的最佳集成方案，随着电容式触摸屏技术发展日渐成熟，发展空间有限，光学触摸屏技术逐渐成为技术研究上的一大热点。
常见的光学触摸屏为红外触摸屏，红外触摸屏是利用X、Y方向上密布的红外线矩阵来检测并定位用户的触摸位置。如图1所示，现有的红外触摸屏在显示器的前面安装一个电路板外框，电路板在屏幕四边排布红外发射管11和红外接收管12，红外发射管11和红外接收管12一一对应形成横竖交叉的红外线矩阵。用户在触摸屏幕时，手指就会挡住经过触摸位置13的横竖两条红外线，此时可以判断出触摸点在屏幕上的位置，任何触摸物体都可改变触点上的红外线而实现触摸屏操作。
发明人发现，虽然红外触摸屏技术已经出现较长一段时间，但由于红外触摸屏体积较大，生产成本较高，影响了红外触摸技术的发展。
发明内容
有鉴于此，本发明提供一种将红外发光单元与红外接收单元集成在显示器内部的有机发光二极管显示装置及其制作方法，以降低红外触摸屏的体积及生产成本。
为实现上述目的，本发明提供如下技术方案：
一种集成触控功能的有机发光二极管显示装置，包括多个像素单元，每个像素单元包括：
基板，所述基板分为显示区域和探测区域；
位于所述基板显示区域的多个有机发光二极管元件，每个所述有机发光二极管元件包括：第一晶体管、第二晶体管、存储电容、电连接所述第二晶体管的第一电极层、位于所述第一电极层上的有机发光层、位于所述有机发光层表面的第二电极层；
位于所述基板探测区域的红外光探测元件，所述红外光探测元件包括：第三晶体管、与所述第三晶体管电连接的红外光探测单元，所述红外光探测单元包括红外光探测第一电极、与所述红外光探测第一电极相连的红外光感应层和与所述红外光感应层相连的红外光探测第二电极；
其中，多个有机发光二极管元件包括红光有机发光二极管元件和蓝光有机发光二极管元件中的至少一个、红外光有机发光二极管元件和绿光有机发光二极管元件。
优选地，所述红外光探测单元的红外感应层的材料体系为碲锌镉汞系、铝镓铟砷系、铟镓砷磷系、铝镓铟磷系、铟镓砷锑系、铝镓砷锑系或硅锗系中的任意一种。
优选地，所述红外光探测单元的结构为PIN光电二极管、异质结光电晶体管、雪崩光电二极管、量子阱红外探测器、量子级联红外探测器和超晶格红外探测器中的任意一种。
优选地，所述红外光有机发光二极管元件中的有机发光层材料为三价线态的稀有金属化合物。
优选地，所述红外光有机发光二极管元件中的有机发光层材料为Ir(III)化 合物。
优选地，每个像素单元中包括红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件和红外光有机发光二极管元件，且所述红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件的排列方式为RGB条状排列方式。
优选地，每个像素单元中包括红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件和红外光有机发光二极管元件，且所述红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件排列方式为RGB交错排列方式。
同时，本发明还提供一种集成触控功能的有机发光二极管显示装置的制作方法，包括：
提供基板，所述基板上包括至少一个像素区域，每个像素区域均分为显示区域和探测区域；
在每个像素区域的显示区域形成第一晶体管和第二晶体管，在每个像素区域的探测区域形成第三晶体管和探测单元的红外探测第一电极和红外探测第二电极；
在所述第二晶体管上形成第一导电膜，图案化所述第一导电膜形成有机发光二极管元件的第一电极层，所述第一电极层位于所述显示区域，并连接至所述第二晶体管；
在所述第三晶体管上形成红外光感应膜；图案化所述红外光感应膜形成红外光感应层，所述红外光感应层位于所述探测区域，并连接至所述第三晶体管；
在所述显示区域的第一电极层外的区域上和探测区域的红外光感应层上形成介电层；
在所述第一电极层上形成图案化有机发光层；
在所述图案化有机发光层和所述介电层上形成第二导电膜，图案化所述第二导电膜形成第二电极层，所述第二电极层位于所述图案化有机发光层上。
优选地，形成第一晶体管、第二晶体管和第三晶体管的具体步骤为：
在所述基板上的显示区域和探测区域中分别形成图案化的多晶硅层；
形成栅极绝缘层，覆盖所述图案化多晶硅层和所述基板；
在各个所述多晶硅层中形成多个源极或漏极区域；
在各个所述图案化多晶硅层的上方的所述栅极绝缘层表面上分别形成一个栅极；
在所述栅极和所述栅极绝缘层表面上形成层间绝缘层；
蚀刻所述层间绝缘层与所述栅极绝缘层，以在多个所述源极或漏极区域上形成多个第一孔洞；
在所述多个第一孔洞中与部分所述层间绝缘层上形成图案化的源极或漏极导电层；
在所述图案化源极或漏极导电层和所述层间绝缘层上形成保护层；
蚀刻所述保护层，在所述图案化源极或漏极导电层上形成多个第二孔洞。
优选地，所述有机发光层包括红光发光层、绿光发光层、蓝光发光层和红外光发光层，且所述在所述第一电极层上形成图案化有机发光层采用的是蒸镀工艺或打印工艺。
优选地，所述第一导电膜为透明导电膜，所述第二导电膜为金属导电膜。
优选地，所述第一导电膜为金属导电膜，所述第二导电膜为透明导电膜。
经由上述的技术方案可知，本发明提供的集成触控功能的有机发光二极管显示装置在OLED显示面板的每个像素内部集成用于发射红外光的红外光有机发光二极管元件和用于接收红外光线的红外光探测元件，在OLED显示面板的像素正常显示时，该像素内的红外光有机发光二极管也同时发光，当手指或者其他物体靠近该像素时，将红外光有机发光二极管发出的红外光反射到该像素内的红外光探测单元上，红外光探测单元接收红外光后导通，从而判断触摸的位置，实现显示和触摸功能。
由于本发明中提供的集成触控功能的有机发光二极管显示装置中的红外光有机发光二极管元件和红外光探测元件均与OLED显示面板内的红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件同时形成，即红外光有机发光二极管元件和红外光探测元件集成在所述OLED显示面板内部，相对于现有技术中在显示器的外部增设电路板，再设置红外发射管和红外接收管形成的红外触摸装置而言，本发明提供的集成触控功能的有机发光二极管显示装置的体积更小。
同时，本发明还提供了一种上述集成触控功能的有机发光二极管显示装置的制作方法，仅需在制作OLED显示面板的红光子像素、绿光子像素和蓝光子像素的过程中，改变光刻图案或增加膜层结构即可，无需增加外部电路板、多个红外发射管和多个红外接收管，从而能够节省红外触摸屏的制作成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为现有技术中带红外触控功能的显示装置图；
图2为本发明提供的集成触控功能的OLED显示装置剖面示意图；
图3为本发明提供的一种集成触控功能的OLED显示装置的工作原理图；
图4为本发明提供的一种集成触控功能的OLED显示装置像素单元的子像素排列图；
图5为本发明提供的另一种集成触控功能的OLED显示装置像素单元的子像素排列图；
图6为本发明提供的一种集成触控功能的OLED显示装置的制作方法步骤图；
图7至图9为本发明提供的集成触控功能OLED显示装置部分工艺流程图。
具体实施方式
正如背景技术部分所述，现有技术中的红外触摸屏的体积较大，生产成本较高，严重影响了红外触摸技术的发展。
发明人发现，出现上述现象的原因是，现有技术中的红外触摸屏是通过显示器和红外触控两个独立系统组建而成的，包括显示器和位于所述显示器外的 多个红外发射管和多个红外接收管，一方面由于所述显示器与实现红外触控的电路板为分离的结构，造成红外触摸屏体积较大；另一方面，由于需要在显示器外围固定电路板、红外发射管和红外接收管等装置，造成生产成本较高。
基于此，发明人经过研究发现提供一种集成触控功能的有机发光二极管显示装置，包括多个像素单元，每个像素单元包括：
基板，所述基板分为显示区域和探测区域；
位于所述基板显示区域的多个有机发光二极管元件，每个所述有机发光二极管元件包括：第一晶体管、第二晶体管、存储电容、电连接所述第二晶体管的第一电极层、位于所述第一电极层上的有机发光层、位于所述有机发光层表面的第二电极层；
位于所述基板探测区域的红外光探测元件，所述红外光探测元件包括：第三晶体管、与所述第三晶体管电连接的红外光探测单元，所述红外光探测单元包括红外光探测第一电极、与所述红外光探测第一电极相连的红外光感应层和与所述红外光感应层相连的红外光探测第二电极；
其中，多个有机发光二极管元件包括红光有机发光二极管元件和蓝光有机发光二极管元件中的至少一个、红外光有机发光二极管元件和绿光有机发光二极管元件。
由上述的技术方案可知，本发明提供的OLED显示装置集成有能够发射红外光的有机发光二极管元件和能够接收红外光的红外光探测单元，从而代替现有技术中的红外光发射管和红外光接收管，使得OLED显示装置具有红外触控功能，并且，红外光有机发光二极管元件和红外光探测单元集成在OLED显示装置中占用体积较小。
以上是本申请的核心思想，下面结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明 还可以采用其他不同于在此描述的方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
其次，本发明结合示意图进行详细描述，在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
下面通过几个实施例具体描述本发明提供的集成触控功能的有机发光二极管显示装置及其制作方法。
本发明的一个实施例公开了一种集成触控功能的有机发光二极管显示装置，包括多个像素单元，且每个像素单元均包括：基板，所述基板分为显示区域和探测区域；位于所述基板显示区域的多个有机发光二极管元件，每个所述有机发光二极管元件包括：第一晶体管、第二晶体管、存储电容、电连接所述第二晶体管的第一电极层、位于所述第一电极层上的有机发光层、位于所述有机发光层表面的第二电极层；位于所述基板探测区域的红外光探测元件，所述红外光探测元件包括：第三晶体管、与所述第三晶体管电连接的红外光探测单元，所述红外光探测单元包括红外光探测第一电极、与所述红外光探测第一电极相连的红外光感应层和与所述红外光感应层相连的红外光探测第二电极；其中，多个有机发光二极管元件包括红光有机发光二极管元件和蓝光有机发光二极管元件中的至少一个、红外光有机发光二极管元件和绿光有机发光二极管元件。
如图2所示，为本实施例提供的集成触控功能的有机发光二极管显示装置的其中一个像素单元中的一个有机发光二极管元件和一个红外光探测单元。
其中，所述有机发光二极管元件位于基板101上的显示区域101A，有机发光二极管元件包括第一晶体管T1、第二晶体管T2、存储电容C和有机发光二极管结构102。其中所述有机发光二极管结构102又包括电连接第二晶体管T2的第一电极层102a、位于第一电极层102a上的有机发光层102b、位于有机发光层102b表面的第二电极层102c。
需要说明的是，本实施例中所述OLED显示装置可以是顶发射型OLED显示装置，也可以是底发射型OLED显示装置，本实施例对此不做限定。当所述OLED显示装置为顶发射型OLED显示装置时，第一电极层102a为具有高反射率的金属导电材料，其材质可以是铂(Pt)、钯(Pd)、铱(Ir)、金(Au)、钨(W)、镍(Ni)、银(Ag)或铝(Al)，而所述第二电极层为透明电极，所述透明电极材料可以为包含氧化铟锡(indium tin oxide，ITO)或氧化铟锌(IZO)等透明导电材料的薄膜，此时，OLED的发光层发射的光沿第一电极层102a朝向第二电极层102c的方向出射。
当所述OLED显示装置为底发射型OLED显示装置时，第一电极层102a为透明电极层，第二电极层102c为高反射率的金属导电层，从而能够使OLED发光层出射的光沿第二电极层102c朝向第一电极层102a的方向出射，形成底发射型OLED。
另外，本实施例中所述有机发光二极管结构102中的有机发光层102b可以是红光有机发光层、绿光有机发光层、蓝光有机发光层和红外光有机发光层中的任意一种，对于发红光、绿光和蓝光的有机发光层，本实施例中的发光层材料可以与现有技术中的有机发光层材料相同。对于红外光有机发光层材料，本实施例中优选为三价线态的稀有金属化合物，更为优选的是Ir(III)化合物。需要说明的是，本实施例中并不限定所述红外光有机发光层材料仅为上面所说的三价线态稀有金属化合物，还可以为其他能够发射红外光的物质，此处不再进行赘述。
当OLED显示装置工作时，所述有机发光二极管元件中的第一晶体管T1作为开关晶体管，第二晶体管T2作为驱动晶体管，且第一晶体管T1的源极连接至数据线，其栅极连接至栅极线，其漏极连接至电容元件的一端和第二晶体管的栅极。第二晶体管T2的源极连接至有机发光二极管结构102的第一电极层102a，本实施例中以第一电极层102a为OLED结构的阳极。通过数据线和栅极线上的脉冲信号控制每个像素单元中的红光子像素、绿光子像素、蓝光子像素和红外光子像素的发光与关闭。
另外，本实施例中OLED显示装置的探测区域还包括红外光探测单元103，所述红外光探测单元用于探测红外光，如图2所示，所述红外光探测单元包括 第三晶体管T3、与第三晶体管T3电连接的红外光探测单元，所述红外光探测单元包括红外光探测第一电极103a、与红外光探测第一电极103a相连的红外光感应层103b和与红外光感应层103b相连的红外光探测第二电极103c。其中，第三晶体管T3为读取晶体管，当红外光照射到红外光探测单元上时，红外光探测单元导通，产生探测信号，借由第三晶体管T3传送到外围电路中的探测信号线上，进而实现OLED红外光触控功能。
所述红外光探测单元中的红外感应层的材料体系为碲锌镉汞系、铝镓铟砷系、铟镓砷磷系、铝镓铟磷系、铟镓砷锑系、铝镓砷锑系或硅锗系中的任意一种。且所述红外光探测单元的结构为PIN光电二极管、异质结光电晶体管、雪崩光电二极管、量子阱红外探测器、量子级联红外探测器和超晶格红外探测器中的任意一种。
如图3所示，为本实施例中提供的OLED显示装置的工作原理图，OLED显示装置中的像素单元中包括红光有机发光二极管元件112、绿光有机发光二极管元件122、蓝光有机发光二极管元件132、红外光有机发光二极管元件142和红外光探测单元143，当通过外围电路控制红外光发光二极管结构发射红外光时，用手指或其他物体在OLED显示装置的某一像素单元位置点击显示画面，被点击像素单元中的红外光有机发光二极管元件142发射的红外光被反射到该像素中的红外光探测单元143中，红外光探测单元143接收到红外光照射，吸收特定波长的红外光后，红外光探测单元143两端的电极导通，进而判断出该像素已被触摸选中，实现红外光触控功能。
需要说明的是，本实施例中所述OLED显示装置中的像素单元中均包括红绿蓝三原色子像素、红外光子像素和红外光探测单元，即每个像素单元中包括红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件、红外光有机发光二极管元件和红外光探测单元。本实施例中不限定所述红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件的排列方式，红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件的排列方式可以为RGB条状排列方式，也可以为RGB交错排列方式。同时，本实施例中也不限定所述红外光有机发光二极管元件、红外光探测单元与RGB三原色有机发光二极管元件的相对位置，其排列方式可 以如图3所示，红外光有机发光二极管元件与红外光探测单元位于红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件的一侧，也可以是红外光有机发光二极管元件与红外光探测单元分别位于三原色有机发光二极管元件的两侧，或其他排列组合方式，如图4和图5所示，本实施例中对此不做限定。
本实施例中提供一种集成触控功能的OLED显示装置，OLED显示装置的包括多个像素单元，每个像素单元分为显示区域和探测区域，每个像素单元的显示区域中除包括现有技术中的红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件之外，还包括红外光有机发光二极管元件，且所述探测区域中包括红外光探测单元。当手指或其他物体触摸到某个像素单元时，能够将所述红外光有机发光二极管元件发射的红外光反射到红外光探测单元上，当红外光探测单元接收到红外光后，其两个电极导通，从而判断出触摸的位置，实现了红外光触控功能。
即本实施例中提供的OLED显示装置集成有能够发射红外光的有机发光二极管元件和能够接收红外光的红外光探测单元，从而代替现有技术中的红外光发射管和红外光接收管，使得OLED显示装置具有红外触控功能，并且，红外光有机发光二极管元件和红外光探测单元集成在OLED显示装置中占用体积较小。
本发明的另一个实施例公开了一种集成触控功能的有机发光二极管显示装置的制作方法，该制作方法工艺步骤如图6所示，包括：
步骤S101：提供基板；
所述基板为透明基板，优选的，所述基板为玻璃基板，所述基板上包括至少一个像素区域，每个像素区域均分为显示区域和探测区域。需要说明的是，基板上还需要形成黑色矩阵层，所述黑色矩阵层用于遮挡OLED显示装置中不透明的元器件。
步骤S102：在每个像素区域的显示区域形成第一晶体管和第二晶体管，在每个像素区域的探测区域形成第三晶体管和探测单元的红外探测第一电极和红外探测第二电极。
所述第一晶体管、所述第二晶体管和所述第三晶体管可以均优选为薄膜晶体管，所述薄膜晶体管可以为多晶硅薄膜晶体管，也可以为非晶硅薄膜晶体管，或氧化物(oxide)薄膜晶体管，本实施例中对此不做限定。本实施例中以第一晶体管、第二晶体管和第三晶体管均为多晶硅薄膜晶体管为例进行说明。
参见图7所示，形成多晶硅薄膜晶体管的具体过程为：首先在基板101上形成多晶硅层，在通过掩膜、刻蚀等工艺，在所述基板上的显示区域和探测区域中分别形成图案化的多晶硅层；利用掩膜掩盖部分所述多晶硅层，对暴露的部分进行掺杂，形成源漏区域(第一晶体管T1的源区域S1和漏区域D1，第二晶体管T2的源区域S2和漏区域D2，第三晶体管T3的源区域S3和漏区域D3)，同时还可以形成电容的一个电极104a；沉积绝缘材料，形成栅极绝缘层105，覆盖所述图案化多晶硅层和所述基板；再在所述栅极绝缘层105上沉积一层栅极材料，形成栅极层，再次通过掩膜、刻蚀等工艺，在各个多晶硅层的上方的栅极绝缘层表面上对应地分别形成一个栅极(图中所示的G1、G2、G3)，同时形成电容的另一个电极104b；在形成的栅极以及栅极绝缘层105上面形成一层层间绝缘层106；蚀刻层间绝缘层106与栅极绝缘层105，从而在多个所述源极或漏极区域上形成多个第一孔洞；在形成第一孔洞的层间绝缘层上沉积导电层，通过掩膜、刻蚀工艺，图案化所述导电层，从而在所述多个第一孔洞中与部分所述层间绝缘层上形成图案化的源极或漏极导电层107，以及红外光探测第一电极103a和红外光探测第二电极103c；最后在所述图案化源极或漏极导电层和所述层间绝缘层上形成保护层108；蚀刻所述保护层，在所述图案化源极或漏极导电层上形成多个第二孔洞109，以便使第二晶体管和第三晶体管与后面形成的有机发光二极管结构形成电连接。
其中，红外光探测单元的红外探测第一电极和红外探测第二电极与所述源极导电层、漏极导电层同时形成，均是通过沉积、掩膜和刻蚀等工艺形成的，本实施例中不再详述。且，所述红外光探测单元的红外探测第一电极、红外探测第二电极的材料可以与源漏极导电层的材料相同，在其他实施例中，也可以不相同。
如此一来，可于基板上一并形成电容元件、第一薄膜晶体管、第二薄膜晶体管与第三薄膜晶体管，其中第一薄膜晶体管与第二薄膜晶体管位于显示区域 中，可分别作为开关薄膜晶体管(switch TFT)与驱动薄膜晶体管(drive TFT)，而第三薄膜晶体管位于探测区域中，可作为读取薄膜晶体管(readout TFT)。本实施例的第一、第二与第三薄膜晶体管为低温多晶硅(low temperature polycrystalline silicon,LTPS)薄膜晶体管，但本发明不限于此。
步骤S103：在所述第二晶体管上形成第一导电膜，图案化所述第一导电膜形成有机发光二极管元件的第一电极层，所述第一电极层位于所述显示区域，并连接至所述第二晶体管。
参见图8，在所述第二晶体管的源漏导电层上的保护层上，通过掩膜、刻蚀等工艺，形成第一导电膜，所述第一导电膜通过步骤S102中的第二孔洞109与第二晶体管的漏极D2相连。同时，图案化所述第一导电膜形成有机发光二极管元件的第一电极层102a，第一电极层可以为透明导电材料也可以为具有高反射率的金属材料，即第一导电膜为透明导电膜或金属导电膜，本实施例中对此不做限定。
步骤S104：在所述第三晶体管上形成红外光感应膜；图案化所述红外光感应膜形成红外光感应层，所述红外光感应层位于所述探测区域，并连接至所述第三晶体管。
如图9所示，与有机发光二极管元件的第一电极层同时形成的，还有红外光感应膜，并且通过掩膜、刻蚀等工艺，将所述红外光感应膜图案化，形成红外光感应层103b，所述红外光感应层通过红外探测第一电极103a电连接至所述第三晶体管的栅极G3。
本实施例中，所述红外光感应膜的材料体系为碲锌镉汞系、铝镓铟砷系、铟镓砷磷系、铝镓铟磷系、铟镓砷锑系、铝镓砷锑系或硅锗系中的任意一种。
步骤S105：在所述显示区域的第一电极层外的区域上和探测区域的红外光感应层上形成介电层；
在形成有机发光层的同时，在所述显示区域内第一电极外的区域上，也即在显示区域的非第一电极层上形成介电层，以保护显示区域的其他器件；同时在探测区域的红外光感应层上形成介电层，所述介电层覆盖所述红外光感应层，以保护所述红外光感应层。
步骤S106：在所述第一电极层上形成图案化有机发光层；
所述有机发光层包括红光发光层、绿光发光层、蓝光发光层和红外光发光层，且有机发光层采用的是蒸镀工艺或打印工艺。根据每个像素单元中子像素的发光颜色不同，所述有机发光层的材料各不相同，对于红外光有机发光二极管元件，所述有机发光层的材料为三价线态的稀有金属化合物。本实施例中对红光有机发光二极管元件、绿光有机发光二极管元件、蓝光有机发光二极管元件的有机发光层的材料不做限定。
步骤S107：在所述图案化有机发光层和所述介电层上形成第二导电膜，图案化所述第二导电膜形成第二电极层，所述第二电极层位于所述图案化有机发光层上，所述第二电极层与所述有机发光层、第一电极层形成有机发光二极管结构。
另外，所述有机发光二极管结构中，第一电极层与有机发光层之间还包括空穴传输层(或电子传输层)，同时第二电极层与有机发光层之间还包括电子传输层(或空穴传输层)。所述空穴传输层可以为NPB(含氮元素的有机分子材料)层，本实施例中对此不做限定。
需要说明的是，本实施例中在形成有机发光二极管显示装置的过程中，每个像素单元中均包括多个发光子像素，本实施例中仅以其中的一个发光子像素为例进行说明，在实际制作过程中，每个像素单元中的多个发光子像素均同时制作形成，本实施例中对相同的工艺制作过程不再进行赘述。
更进一步地，为了避免水气侵蚀元件，可再形成保护层(图未示)覆盖第二电极层和介电层，保护层可以为由沉积法或旋涂法所形成的氧化硅及/或氮化硅层。
本实施例中提供的集成触控功能的有机发光二极管显示装置的制作方法，在制作现有技术中的OLED显示装置过程中，由于红外光有机发光二极管元件的制作过程与现有技术中的三原色有机发光二极管元件的制作过程相同，且红外光探测单元的制作也可以兼容在OLED显示装置的制作过程中，在制作本实施例中提供的OLED显示装置时，仅改变光刻图案或增加膜层结构即可，无需增加外部电路板、多个红外发射管和多个红外接收管，从而能够节省红外触摸屏的制作成本。同时，本实施例中提供的OLED显示装置在不增加OLED显示装置的体积的情况下，集成了红外光发射装置与红外光接收装置，实现了 红外触控功能。
本说明书中各个部分采用递进的方式描述，每个部分重点说明的都是与其他部分的不同之处，各个部分之间相同相似部分互相参见即可。对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (12)

  1. 一种集成触控功能的有机发光二极管显示装置，其特征在于，包括多个像素单元，每个像素单元包括：
    基板，所述基板分为显示区域和探测区域；
    位于所述基板显示区域的多个有机发光二极管元件，每个所述有机发光二极管元件包括：第一晶体管、第二晶体管、存储电容、电连接所述第二晶体管的第一电极层、位于所述第一电极层上的有机发光层、位于所述有机发光层表面的第二电极层；
    位于所述基板探测区域的红外光探测元件，所述红外光探测元件包括：第三晶体管、与所述第三晶体管电连接的红外光探测单元，所述红外光探测单元包括红外光探测第一电极、与所述红外光探测第一电极相连的红外光感应层和与所述红外光感应层相连的红外光探测第二电极；
    其中，多个有机发光二极管元件包括红光有机发光二极管元件和蓝光有机发光二极管元件中的至少一个、红外光有机发光二极管元件和绿光有机发光二极管元件。
  2. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，所述红外光探测单元的红外感应层的材料体系为碲锌镉汞系、铝镓铟砷系、铟镓砷磷系、铝镓铟磷系、铟镓砷锑系、铝镓砷锑系或硅锗系中的任意一种。
  3. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，所述红外光探测单元的结构为PIN光电二极管、异质结光电晶体管、雪崩光电二极管、量子阱红外探测器、量子级联红外探测器和超晶格红外探测器中的任意一种。
  4. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，所述红外光有机发光二极管元件中的有机发光层材料为三价线态的稀有金属化合物。
  5. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，所述红外光有机发光二极管元件中的有机发光层材料为Ir(III)化合物。
  6. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，每个 像素单元中包括红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件和红外光有机发光二极管元件，且所述红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件的排列方式为RGB条状排列方式。
  7. 根据权利要求1所述的有机发光二极管显示装置，其特征在于，每个像素单元中包括红光有机发光二极管元件、蓝光有机发光二极管元件、绿光有机发光二极管元件和红外光有机发光二极管元件，且所述红光有机发光二极管元件、绿光有机发光二极管元件和蓝光有机发光二极管元件排列方式为RGB交错排列方式。
  8. 一种集成触控功能的有机发光二极管显示装置的制作方法，其特征在于，包括：
    提供基板，所述基板上包括至少一个像素区域，每个像素区域均分为显示区域和探测区域；
    在每个像素区域的显示区域形成第一晶体管和第二晶体管，在每个像素区域的探测区域形成第三晶体管和探测单元的红外探测第一电极和红外探测第二电极；
    在所述第二晶体管上形成第一导电膜，图案化所述第一导电膜形成有机发光二极管元件的第一电极层，所述第一电极层位于所述显示区域，并连接至所述第二晶体管；
    在所述第三晶体管上形成红外光感应膜；图案化所述红外光感应膜形成红外光感应层，所述红外光感应层位于所述探测区域，并连接至所述第三晶体管；
    在所述显示区域的第一电极层外的区域上和探测区域的红外光感应层上形成介电层；
    在所述第一电极层上形成图案化有机发光层；
    在所述图案化有机发光层和所述介电层上形成第二导电膜，图案化所述第二导电膜形成第二电极层，所述第二电极层位于所述图案化有机发光层上。
  9. 根据权利要求8所述的制作方法，其特征在于，形成第一晶体管、第二晶体管和第三晶体管的具体步骤为：
    在所述基板上的显示区域和探测区域中分别形成图案化的多晶硅层；
    形成栅极绝缘层，覆盖所述图案化多晶硅层和所述基板；
    在各个所述多晶硅层中形成多个源极或漏极区域；
    在各个所述图案化多晶硅层的上方的所述栅极绝缘层表面上分别形成一个栅极；
    在所述栅极和所述栅极绝缘层表面上形成层间绝缘层；
    蚀刻所述层间绝缘层与所述栅极绝缘层，以在多个所述源极或漏极区域上形成多个第一孔洞；
    在所述多个第一孔洞中与部分所述层间绝缘层上形成图案化的源极或漏极导电层；
    在所述图案化源极或漏极导电层和所述层间绝缘层上形成保护层；
    蚀刻所述保护层，在所述图案化源极或漏极导电层上形成多个第二孔洞。
  10. 根据权利要求8所述的制作方法，其特征在于，所述有机发光层包括红光发光层、绿光发光层、蓝光发光层和红外光发光层，且所述在所述第一电极层上形成图案化有机发光层采用的是蒸镀工艺或打印工艺。
  11. 根据权利要求8所述的制作方法，其特征在于，所述第一导电膜为透明导电膜，所述第二导电膜为金属导电膜。
  12. 根据权利要求8所述的制作方法，其特征在于，所述第一导电膜为金属导电膜，所述第二导电膜为透明导电膜。
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