WO2015184946A1 - 薄膜材料残余应力测试结构及方法 - Google Patents

薄膜材料残余应力测试结构及方法 Download PDF

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WO2015184946A1
WO2015184946A1 PCT/CN2015/078243 CN2015078243W WO2015184946A1 WO 2015184946 A1 WO2015184946 A1 WO 2015184946A1 CN 2015078243 W CN2015078243 W CN 2015078243W WO 2015184946 A1 WO2015184946 A1 WO 2015184946A1
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film material
structures
residual stress
test
deflection
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PCT/CN2015/078243
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English (en)
French (fr)
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李伟华
王雷
张璐
周再发
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李伟华
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Priority to US15/104,095 priority Critical patent/US10088375B2/en
Publication of WO2015184946A1 publication Critical patent/WO2015184946A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/08—Measuring force or stress, in general by the use of counterbalancing forces
    • G01L1/086—Measuring force or stress, in general by the use of counterbalancing forces using electrostatic or electromagnetic counterbalancing forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/0047—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to residual stresses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

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  • the present invention provides a test structure for residual stress of a film material. It belongs to the technical field of microelectromechanical system (MEMS) material parameter testing.
  • MEMS microelectromechanical system
  • the performance of MEMS is closely related to material parameters. Due to the influence of the processing process, some material parameters will change. These uncertainties caused by the processing technology will make the device design and performance prediction uncertain and unstable.
  • the purpose of the material parameter test is to be able to measure the material parameters of the MEMS device manufactured by the specific process in real time, monitor the stability of the process, and feed back the parameters to the designer to correct the design. Therefore, testing without leaving the processing environment and using common equipment becomes a necessary means of process monitoring.
  • the physical parameters of the mechanical properties of the material mainly include residual stress, Young's modulus, Poisson's ratio, and breaking strength.
  • Thin film materials are widely used in microelectromechanical device structures, especially in surface micromechanical structures, which are the main materials for structural materials.
  • most of the material parameter online test structures are for conductive materials, such as doped single crystal silicon, doped polysilicon, and metal.
  • conductive materials such as doped single crystal silicon, doped polysilicon, and metal.
  • insulating materials such as silicon nitride, silicon dioxide, and single crystal silicon or polysilicon coated with silicon dioxide, direct loading and electrical detection of test signals are difficult to achieve due to the insulating properties of these materials.
  • the present invention proposes a test structure for measuring the residual stress of a film material.
  • the test structure consists of two sets of structures: one for measuring the reference data, ie the amount of force applied when the structure produces a certain bending deflection; the other is for measuring the residual stress test unit after the same bending deflection.
  • the amount of force that needs to be applied The force applied twice is subtracted to obtain the force value actually received on the residual stress test structure, and the residual stress of the film material can be calculated according to the value and the bending deflection and according to the geometrical dimensions of the test structure.
  • the structure for actually testing the residual stress is a double-ended fixed beam made of the film material to be tested.
  • a force source is formed using an electrostatically driven polysilicon cantilever beam.
  • An asymmetric cross beam with an alignment structure made of a film material to be tested is used as a deflection measuring unit, the vertical short beam of the cross beam is used as a rotating shaft, and both ends of the vertical short beam are connected with the anchoring region, and the vertical short beam is connected.
  • An alignment structure is placed at the end of the longer long beam.
  • the center of the fixed beam and the shorter long beam end of the cross beam are simultaneously placed under the end of the polysilicon cantilever beam, and the electrostatic force generated by the application of the voltage pulls down the polysilicon cantilever beam, and at the same time makes the center of the fixed beam and the cross beam
  • the ends of the short beams move downwardly, and the drive ends when the alignment structures at the ends of the longer long beams in the cross beams are aligned.
  • the magnitude of the electrostatic force includes three parts of force: the force required to drive the polyhedral cantilever to bend down; the force required to twist the cross beam; the fixed beam is bent down The force required.
  • the electrostatic force measured twice is subtracted, and the difference in electrostatic force is the force required to drive the fixed beam to reach the set deflection.
  • the residual stress of the film material to be tested can be calculated from the magnitude and deflection of the force and the geometry of the fixed beam.
  • the present invention provides a test structure for measuring residual stress of a film material.
  • the test structure consists of two sets of structures, the first set of structures including an electrostatically driven polysilicon cantilever beam, an asymmetric cross beam with an alignment structure made of the film material to be tested, and a double-ended solid support made of the film material to be tested.
  • the second set of structures is the remaining structure of the first set of structures after removal of the fixed beams;
  • the polysilicon cantilever beam of the first group structure is formed by connecting a first anchor zone, an elongated beam, a wide beam as an upper electrode, and a short short beam from left to right.
  • the lower surface of the wide beam is a rectangular lower electrode, and the width is wide.
  • An air layer is disposed between the beam and the lower electrode; and a first bump and a second bump are respectively used as a point of application of the fixed beam and the cross beam on the lower surface of the thin short beam;
  • the fixed beam in the first set of structures is formed by connecting a second anchor zone, a third anchor zone and a long beam, the fixed beam is perpendicular to the polysilicon cantilever beam, and the center of the fixed beam is located at the first side of the polysilicon cantilever beam. Under the bump;
  • the cross beam in the first set of structures is composed of a fourth anchor zone, a fifth anchor zone, a first vertical short beam, two left long beams of different lengths, a right long beam, and an alignment structure;
  • the two ends of a vertical short beam are connected to the fourth anchor zone and the fifth anchor zone, and the left long beam and the right long beam are arranged on the left and right sides of the first vertical short beam center position, from the first vertical short
  • the length from the center of the beam to the second bump is L2
  • the length from the center of the vertical short beam to the side of the vertical beam B is L1, L1 is greater than L2
  • the right end of the right long beam is connected with an alignment structure, the alignment structure
  • the second vertical short beam, the third vertical short beam and the sixth anchor zone are formed, wherein the second vertical short beam is connected to the right end of the right long beam, in a vertical relationship, and the third vertical short beam has one end and a sixth
  • the anchoring areas are connected; the aligned side of the alignment structure is
  • the test method for the residual stress test structure of the film material of the present invention is: using the same principle that the same part of the second set of structures and the same part of the second set of structures are subjected to the same force under the same test deflection, and the need for extracting the center of the fixed beam to achieve the test deflection is extracted. Electrostatic force
  • the test deflection of the center of the fixed beam is controlled by the design distances ⁇ , L1, L2, and when the A and B are aligned, the second bump position of the center of the fixed beam
  • the electrostatic force F1 of the first set of structures under test deflection comprises three parts: the force required to drive the polysilicon cantilever beam to bend, the force required to twist the cross beam, and the force required to bend the fixed beam;
  • the electrostatic force F2 of the second set of structures under test deflection includes two parts: the force required to drive the polysilicon cantilever beam to bend; the force required to twist the cross beam;
  • Subtracting F1 from F2 is the net force required to drive the fixed beam alone to reach the test deflection.
  • the invention provides a test structure for residual stress of a film material, which can be used for residual stress testing of conductive film materials and insulating film materials.
  • the invention separates the load-driven part of the force from the residual stress test structure made of the film material to be tested, controls the bending deflection of the test structure through the geometric parameter design, and extracts the residual stress by the same principle of the same part of the two parts of the test structure.
  • the force to which the structure is subjected is measured, and the residual stress of the insulating film material is calculated by using force and deflection.
  • the test structure, measurement method and parameter extraction method of the invention are extremely simple and can be used for testing residual stress of various film materials such as conductors/insulators.
  • the greatest advantage of the present invention is that the residual stress test method of the film material is simple, the test equipment requirements are low, and the test process and test parameter values are stable. The process is synchronized with the MEMS device and there are no special processing requirements. Fully compliant with online testing requirements.
  • the calculation method is limited to simple mathematical formulas.
  • the test structure, the measurement method and the parameter extraction calculation method of the invention are extremely simple and have wide adaptability, and can be used for testing residual stress of conductive and insulating film materials.
  • Figure 1 is a first set of structures of the present invention.
  • Figure 2 is a second set of structures of the present invention.
  • the figure includes: polysilicon cantilever beam 101, cross beam 102, fixed beam 103;
  • first anchor region 101-1 an elongated beam 101-2, a wide beam 101-3, a thin short beam 101-4, a first bump 101-5, a second bump 101-6, a lower electrode 101-7;
  • the present invention provides a test structure for measuring the residual stress of a film material.
  • the test structure consists of two sets of structures, as shown in Figures 1 and 2, respectively.
  • the first set of structures shown in FIG. 1 includes an electrostatically driven polysilicon cantilever beam 101, an asymmetric cross beam 102 with an alignment structure made of a film material to be tested, and a double-ended fixed beam 103 made of a film material to be tested;
  • the second set of test structures is shown in FIG. 2 and includes a polysilicon cantilever beam 101 and a cross beam 102.
  • the second set of structures is the remaining structure after the first set of structures has been removed from the fixed beam 103.
  • the polysilicon cantilever beam 101 of the first group structure is formed by connecting the first anchor region 101-1, the elongated beam 101-2, the wide beam 101-3 as the upper electrode, and the short short beam 101-4 from left to right.
  • the lower surface of the wide beam 101-3 is a rectangular lower electrode 101-7, and between the wide beam 101-3 and the lower electrode 101-7 is an air layer; on the lower surface of the thin short beam 101-4, there is a first bump 101-5, the second bumps 101-6 serve as the point of application of the fixed beam 103 and the cross beam 102, respectively;
  • the fixed beam 103 in the first group structure is formed by connecting the second anchor zone 103-2, the third anchor zone 103-3 and the long beam 103-1.
  • the fixed beam 103 is perpendicular to the polysilicon cantilever beam 101, and is solid.
  • the center of the beam 103 is located below the first bump 101-5 on the left side of the polysilicon cantilever beam 101;
  • the cross beam 102 in the first set of structures is composed of a fourth anchor zone 102-2, a fifth anchor zone 102-3, a first vertical short beam 102-4, two left length long beams 102-1 of different lengths, The right long beam 102-5 and an alignment structure are formed; wherein the two ends of the first vertical short beam 102-4 are connected to the fourth anchor zone 102-2 and the fifth anchor zone 102-3, at the first
  • the left and right sides of the vertical short beam 102-4 are provided with a left long beam 102-1 and a right long beam 102-1, from the center of the first vertical short beam 102-4 to the length of the second bump 101-6.
  • the length from the center of the vertical short beam 102-4 to the side of the vertical beam 102-6B is L1, L1 is greater than L2; at the right end of the right long beam 102-5 is connected with an alignment structure, the alignment structure is Two vertical short beams 102-6, a third vertical short beam 102-8 and a sixth anchor region 102-7, wherein the second vertical short beam 102-6 is connected to the right end of the right long beam 102-5.
  • one end of the third vertical short beam 102-8 is connected to the sixth anchor zone 102-7; the aligned side of the alignment structure is the A side of the third vertical short beam 102-8 and the second vertical short beam On the B side of 102-6, there is a slight distance ⁇ on the sides A and B, the horizontal axis of the cross beam 102 and Crystal silicon cantilever beam 101 coincides with a horizontal axis.
  • the test method for the residual stress test structure of the film material is to extract the static required to drive the center of the fixed beam 103 to the test deflection by using the same principle of the same structure and the same portion of the second set of structures under the same test deflection. electric power;
  • the test deflection of the center of the fixed beam 103 is controlled by the design distances ⁇ , L1, L2.
  • the second bump 101-6 at the center of the fixed beam 103 is located.
  • the electrostatic force F1 of the first set of structures under test deflection includes three parts: the force required to drive the polysilicon cantilever 101 to bend, the force required to twist the cross beam 102, and the force required to bend the fixed beam 103;
  • the electrostatic force F2 of the second set of structures under test deflection includes two parts: the force required to drive the polysilicon cantilever beam 101 to bend; the force required to twist the cross beam 102;
  • Subtracting F1 from F2 is the net force required to drive the fixed beam 103 alone to reach the test deflection.
  • the second set of structures is the remaining structure after the fixed beam 103 is removed in the first set of structures, all of which have the same unit structure and dimensions as the first set of structural corresponding units.
  • the test principle of the residual stress of the film material is as follows:
  • the first set of structures is tested, and a gradually increasing voltage is applied between the upper and lower plate wide beams 101-3 and 101-7 of the polysilicon cantilever 101, and the electrostatic force generated by the voltage drives the right end of the polysilicon cantilever 101 downward.
  • Bending, while pressing the center of the fixed beam 103 and the left end of the cross beam 102 through the first bump 101-5, the second bump 101-6, and moving the cross beam 102 to the first vertical short beam 102- 4 is the shaft torsion, which causes the right long beam 102-5 to tilt upwards, the right long beam 102-5 has a shorter projection length, and the B side gradually approaches the A side.
  • the test deflections required for testing can be easily controlled by design values ⁇ , L1, L2.
  • the deflection (test deflection) of the center of the fixed beam 103 at the position of the second bump 101-6 is:
  • the electrostatic force F1 at this time can be calculated from the deflection and the applied voltage value V1.
  • F1 consists of three parts: the force required to bend the polysilicon cantilever beam 101; the force required to twist the cross beam 102; the required bending of the fixed beam 103 force.
  • the second set of structures is tested.
  • a gradually increasing voltage is applied through the upper and lower plate wide beams 101-3 and the lower electrodes 101-7 to bend the right end of the polysilicon cantilever beam 101 downward while pressing the left end of the cross beam 102 through the second bumps 101-6.
  • the right long beam 102-5 is tilted upward, and when the B side and the A side are aligned, the voltage increase is stopped and the voltage value V2 is recorded.
  • the electrostatic force F2 at this time can be calculated from the applied voltage value V2 and the moving distance (deflection).
  • F2 consists of two parts: the force required to drive the beam 101 to bend; the force required to twist the cross beam 102.
  • Subtracting F2 from F1 is the net force required to drive the fixed beam 103 alone to reach the set deflection.
  • the residual stress of the film material can be calculated from the value of the force and the deflection of the center of the fixed beam 103.

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Abstract

公开了一种薄膜材料残余应力的测试结构。该测试结构由两组结构组成。第一组结构包括静电驱动的多晶硅悬臂梁（101）、由待测薄膜材料制作的带有对准结构的非对称十字梁（102）、由待测薄膜材料制作的双端固支梁（103）。第二组结构是第一组结构去除固支梁（103）后的剩余结构。将力的加载驱动部分和待测薄膜材料制作的残余应力测试结构分开，通过几何参数设计控制测试结构的弯曲挠度，通过两组测试结构的相同部分受力相同的原理提取出残余应力测试结构所受到的力，利用力和挠度计算得到待测薄膜材料的残余应力。还公开了一种薄膜材料残余应力的测试方法。该测试结构、测试方法和参数提取的计算方法极其简单、适应性广，可以用于测试导电或绝缘薄膜材料的残余应力。

Description

薄膜材料残余应力测试结构及方法 技术领域
本发明提供了一种薄膜材料残余应力的测试结构。属于微机电系统(MEMS)材料参数测试技术领域。
背景技术
微机电系统的性能与材料参数有密切的关系。由于加工过程的影响，一些材料参数将产生变化，这些由加工工艺所导致的不确定因素，将使得器件设计与性能预测出现不确定和不稳定的情况。材料参数测试目的就在于能够实时地测量由具体工艺制造的微机电器件材料参数，对工艺的稳定性进行监控，并将参数反馈给设计者，以便对设计进行修正。因此，不离开加工环境并采用通用设备进行的测试成为工艺监控的必要手段。材料力学性能的物理参数主要包括残余应力、杨氏模量、泊松比、断裂强度等。
在微机电器件结构中广泛地使用薄膜材料，尤其是在表面微机械结构中，薄膜材料是结构材料的主要材料。目前大多数的材料参数在线测试结构都是针对导电材料，例如掺杂单晶硅、掺杂多晶硅以及金属等。对于绝缘材料，例如氮化硅、二氧化硅以及被二氧化硅所包裹的单晶硅或多晶硅，由于这些材料具有绝缘特性，不易实现测试信号的直接加载和电检测。
发明内容：
技术问题：测量材料的残余应力通常需要知道结构受力大小和结构受力所产生的形变或弯曲的挠度。本发明提出了一种测试结构，用于测量薄膜材料的残余应力。测试结构由两组结构组成：其中一组用于测量基准数据，即结构产生一定弯曲挠度时所施加力的大小；另一组用于测量在同样弯曲挠度条件下，加入残余应力测试单元后所需要施加的力的大小。将两次所施加的力相减，得到在残余应力测试结构上实际受到的力值，根据该值和弯曲挠度并根据测试结构的几何尺寸等即可计算得到该薄膜材料的残余应力。
技术方案：为实现上述目的，本发明采用的技术方案是：
实际测试残余应力的结构为一个由待测薄膜材料制作的双端固支梁。利用静电驱动的多晶硅悬臂梁形成作用力源。采用由待测薄膜材料制作的带对准结构的非对称十字梁作为挠度测量单元，该十字梁的竖直短梁作为转轴，竖直短梁的两端和锚区连接，在竖直短梁中心位置的左右两侧各有一根水平长梁，两根水平长梁的长度不同，目的是利用比例放大原理提高挠度测量精度。在较长的长梁末端设置一个对准结构。
将固支梁的中心和十字梁较短的长梁末端同时置于多晶硅悬臂梁末端之下，通过施加电压而产生的静电力下拉多晶硅悬臂梁，并同时使固支梁的中心和十字梁较短长梁的末端向下运动，当位于十字梁中较长的长梁末端的对准结构对准时驱动结束。此时，静电力的大小包括三部分力：驱动多晶硅悬臂梁下弯所需要的力；十字梁发生扭转所需要的力；固支梁下弯 的所需要的力。
去掉用于实际测量残余应力的固支梁，仅留下晶硅悬臂梁和十字梁形成另一组测试结构，采用同样的静电驱动方法使多晶硅悬臂梁达到同样的挠度，根据所施加的电压的大小和挠度的大小计算得到此时的静电力。
将两次测量的静电力相减，静电力的差即为驱动固支梁达到设定挠度所需要的力。由该力的大小和挠度以及固支梁几何尺寸等即可计算得到待测薄膜材料的残余应力。
根据上述技术方案，本发明提供了一种测量薄膜材料残余应力的测试结构。该测试结构由两组结构组成，第一组结构包括静电驱动的多晶硅悬臂梁、由待测薄膜材料制作的带有对准结构的非对称十字梁、由待测薄膜材料制作的双端固支梁；第二组结构是第一组结构去除固支梁后的剩余结构；
所述第一组结构的多晶硅悬臂梁由第一锚区、细长梁、作为上电极的宽梁、细短梁自左向右连接而成，在宽梁的下表面是矩形下电极，宽梁和下电极之间是空气层；在细短梁的下表面有第一凸点、第二凸点分别作为固支梁和十字梁的施力点；
所述第一组结构中的固支梁由第二锚区、第三锚区和长梁连接而成，固支梁与多晶硅悬臂梁垂直，固支梁的中心位于多晶硅悬臂梁左边的第一凸点之下；
所述第一组结构中的十字梁由第四锚区、第五锚区、第一竖直短梁、两根不同长度的左边长梁、右边长梁以及一个对准结构组成；其中，第一竖直短梁的两端分部与第四锚区、第五锚区相连，在第一竖直短梁中心位置的左右两边设有左边长梁和右边长梁，从第一竖直短梁的中心到第二凸点的长度为L2，从竖直短梁的中心到竖直梁B边的长度为L1，L1大于L2；在右边长梁的右端连接一个对准结构，对准结构由第二竖直短梁、第三竖直短梁和第六锚区构成，其中第二竖直短梁连接在右边长梁的右端，成垂直关系，第三竖直短梁一端与第六锚区相连；对准结构的对准边为第三竖直短梁的A边和第二竖直短梁的B边，A、B边有一个微小的距离△，十字梁的水平轴线和多晶硅悬臂梁的水平轴线重合。
本发明的薄膜材料残余应力测试结构的测试方法是：利用第一组结构和第二组结构相同部分在相同测试挠度下受力相同的原理，提取出驱动固支梁中心达到测试挠度时所需要的静电力；
所述的固支梁，其中心的测试挠度通过设计距离△、L1、L2进行控制，当A、B对准时，固支梁中心的第二凸点位置的
Figure PCTCN2015078243-appb-000001
所述第一组结构在测试挠度下的静电力F1包含了三部分：驱动多晶硅悬臂梁弯曲所需要的力、十字梁扭转所需要的力、固支梁弯曲所需要的力；
所述第二组结构在测试挠度下的静电力F2包括了两部分：驱动多晶硅悬臂梁弯曲所需要的力；十字梁扭转所需要的力；
将F1减去F2即为单独驱动固支梁到达测试挠度所需要的净力。
有益效果：与现有技术相比，本发明具有以下有益效果：
本发明提出了一种薄膜材料残余应力的测试结构，可以用于导电薄膜材料和绝缘薄膜材料的残余应力测试。本发明将力的加载驱动部分和由待测薄膜材料制作的残余应力测试结构分开，通过几何参数设计控制测试结构的弯曲挠度，通过两组测试分结构相同部分受力相同的原理提取出残余应力测试结构所受到的力，利用力和挠度计算得到绝缘薄膜材料的残余应力。本发明的测试结构、测量方法和参数提取的方法极其简单，可以用于导体/绝缘体等多种薄膜材料的残余应力的测试。
本发明的最大优点在于薄膜材料的残余应力测试方法简单，测试设备要求低，测试过程及测试参数值稳定。加工过程与微机电器件同步，没有特殊加工要求。完全符合在线测试的要求。计算方法仅限于简单数学公式。本发明的测试结构、测量方法和参数提取的计算方法极其简单，适应性广，可以用于测试导电和绝缘薄膜材料的残余应力。
附图说明
图1是本发明的第一组结构。
图2是本发明的第二组结构。
图中有：多晶硅悬臂梁101、十字梁102、固支梁103；
第一锚区101-1、细长梁101-2、宽梁101-3、细短梁101-4、第一凸点101-5、第二凸点101-6、下电极101-7；
长梁103-1、第二锚区103-2、第三锚区103-3；
左边长梁102-1、第四锚区102-2、第五锚区102-3、第一竖直短梁102-4、右边长梁102-5、第二竖直短梁102-6、第六锚区102-7、第三竖直短梁102-8。
具体实施方式
下面结合附图1和图2对本发明做更进一步的说明。
本发明提供了一种测量薄膜材料残余应力的测试结构。测试结构由两组结构构成，分别如图1和图2所示。图1所示的第一组结构包括静电驱动的多晶硅悬臂梁101、由待测薄膜材料制作的带对准结构的非对称十字梁102、由待测薄膜材料制作的双端固支梁103；第二组测试结构如图2所示，包括多晶硅悬臂梁101和十字梁102。第二组结构是第一组结构去掉了固支梁103后的剩余结构。
所述第一组结构的多晶硅悬臂梁101由第一锚区101-1、细长梁101-2、作为上电极的宽梁101-3、细短梁101-4自左向右连接而成，在宽梁101-3的下表面是矩形下电极101-7，宽梁101-3和下电极101-7之间是空气层；在细短梁101-4的下表面有第一凸点101-5、第二凸点101-6分别作为固支梁103和十字梁102的施力点；
所述第一组结构中的固支梁103由第二锚区103-2、第三锚区103-3和长梁103-1连接而成，固支梁103与多晶硅悬臂梁101垂直，固支梁103的中心位于多晶硅悬臂梁101左边的第一凸点101-5之下；
所述第一组结构中的十字梁102由第四锚区102-2、第五锚区102-3、第一竖直短梁102-4、两根不同长度的左边长梁102-1、右边长梁102-5以及一个对准结构组成；其中，第一竖直短梁102-4的两端分部与第四锚区102-2、第五锚区102-3相连，在第一竖直短梁102-4中心位置的左右两边设有左边长梁102-1和右边长梁102-1，从第一竖直短梁102-4的中心到第二凸点101-6的长度为L2，从竖直短梁102-4的中心到竖直梁102-6B边的长度为L1，L1大于L2；在右边长梁102-5的右端连接一个对准结构，对准结构由第二竖直短梁102-6、第三竖直短梁102-8和第六锚区102-7构成，其中第二竖直短梁102-6连接在右边长梁102-5的右端，成垂直关系，第三竖直短梁102-8一端与第六锚区102-7相连；对准结构的对准边为第三竖直短梁102-8的A边和第二竖直短梁102-6的B边，A、B边有一个微小的距离△，十字梁102的水平轴线和多晶硅悬臂梁101的水平轴线重合。
薄膜材料残余应力测试结构的测试方法是：利用第一组结构和第二组结构相同部分在相同测试挠度下受力相同的原理，提取出驱动固支梁103中心达到测试挠度时所需要的静电力；
所述的固支梁103，其中心的测试挠度通过设计距离△、L1、L2进行控制，当A、B对准时，固支梁103中心的第二凸点101-6位置的
Figure PCTCN2015078243-appb-000002
所述第一组结构在测试挠度下的静电力F1包含了三部分：驱动多晶硅悬臂梁101弯曲所需要的力、十字梁102扭转所需要的力、固支梁103弯曲所需要的力；
所述第二组结构在测试挠度下的静电力F2包括了两部分：驱动多晶硅悬臂梁101弯曲所需要的力；十字梁102扭转所需要的力；
将F1减去F2即为单独驱动固支梁103到达测试挠度所需要的净力。
所述第二组结构是在所述第一组结构中去掉了固支梁103之后的剩余结构，其所有单元结构和尺寸均与第一组结构对应单元相同。
薄膜材料残余应力的测试原理如下：
首先对第一组结构进行测试，在多晶硅悬臂梁101的上下极板宽梁101-3和101-7之间施加逐渐增加的电压，该电压产生的静电力驱动多晶硅悬臂梁101的右端向下弯曲，同时通过第一凸点101-5、第二凸点101-6压迫固支梁103的中心和十字梁102的左端向下移动，并使十字梁102以第一竖直短梁102-4为轴扭转，导致右边长梁102-5向上翘起，右边长梁102-5的投影长度缩短，B边逐渐逼近A边，当B边和A边对准时停止增加电压并记录电压值V1。通过设计值△、L1、L2可以简单地控制测试时需要达到的测试挠度。当A、B对准时，固支梁103中心在第二凸点101-6位置的挠度(测试挠度)为：
Figure PCTCN2015078243-appb-000003
由挠度和所施加的电压值V1可以计算得到此时的静电力F1。F1包括了三个部分：多晶硅悬臂梁101弯曲所需要的力；十字梁102扭转所需要的力；固支梁103弯曲所需要的 力。
接下来对第二组结构进行测试。同样地，通过上下极板宽梁101-3和下电极101-7施加逐渐增加的电压，使多晶硅悬臂梁101的右端向下弯曲，同时通过第二凸点101-6压迫十字梁102的左端向下移动，并使十字梁102以第一竖直短梁102-4为轴扭转，右边长梁102-5向上翘起，当B边和A边对准时停止增加电压并记录电压值V2。由所施加的电压值V2和移动距离(挠度)可以计算得到此时的静电力F2。F2包括了两个部分：驱动梁101弯曲所需要的力；十字梁102扭转所需要的力。
F1减去F2即为单独驱动固支梁103到达设定挠度所需要的净力。由该力的值和固支梁103中心的挠度可以计算得到薄膜材料的残余应力。
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (2)

  1. 一种薄膜材料残余应力测试结构，其特征在于该测试结构由两组结构组成，第一组结构包括静电驱动的多晶硅悬臂梁(101)、由待测薄膜材料制作的带有对准结构的非对称十字梁(102)、由待测薄膜材料制作的双端固支梁(103)；第二组结构是第一组结构去除固支梁(103)后的剩余结构；
    所述第一组结构的多晶硅悬臂梁(101)由第一锚区(101-1)、细长梁(101-2)、作为上电极的宽梁(101-3)、细短梁(101-4)自左向右连接而成，在宽梁(101-3)的下表面是矩形下电极(101-7)，宽梁(101-3)和下电极(101-7)之间是空气层；在细短梁(101-4)的下表面有第一凸点(101-5)、第二凸点(101-6)分别作为固支梁(103)和十字梁(102)的施力点；
    所述第一组结构中的固支梁(103)由第二锚区(103-2)、第三锚区(103-3)和长梁(103-1)连接而成，固支梁(103)与多晶硅悬臂梁(101)垂直，固支梁(103)的中心位于多晶硅悬臂梁(101)左边的第一凸点(101-5)之下；
    所述第一组结构中的十字梁(102)由第四锚区(102-2)、第五锚区(102-3)、第一竖直短梁(102-4)、两根不同长度的左边长梁(102-1)、右边长梁(102-5)以及一个对准结构组成；其中，第一竖直短梁(102-4)的两端分别与第四锚区(102-2)、第五锚区(102-3)相连，在第一竖直短梁(102-4)中心位置的左右两边设有左边长梁(102-1)和右边长梁(102-5)，从第一竖直短梁(102-4)的中心到第二凸点(101-6)的长度为L2，从竖直短梁(102-4)的中心到竖直梁(102-6)B边的长度为L1，L1大于L2；在右边长梁(102-5)的右端连接一个对准结构，对准结构由第二竖直短梁(102-6)、第三竖直短梁(102-8)和第六锚区(102-7)构成，其中第二竖直短梁(102-6)连接在右边长梁(102-5)的右端，成垂直关系，第三竖直短梁(102-8)一端与第六锚区(102-7)相连；对准结构的对准边为第三竖直短梁(102-8)的A边和第二竖直短梁(102-6)的B边，A、B边有一个微小的距离△，十字梁(102)的水平轴线和多晶硅悬臂梁(101)的水平轴线重合。
  2. 一种如权利要求1所述的薄膜材料残余应力测试结构的测试方法，其特征在于，利用第一组结构和第二组结构相同部分在相同测试挠度下受力相同的原理，提取出驱动固支梁(103)中心达到测试挠度时所需要的静电力；
    所述的固支梁(103)，其中心的测试挠度通过设计距离△、L1、L2进行控制，当A、B对准时，
    Figure PCTCN2015078243-appb-100001
    所述第一组结构在测试挠度下的静电力F1包含了三部分：驱动多晶硅悬臂梁(101)弯曲所需要的力、十字梁(102)扭转所需要的力、固支梁(103)弯曲所需要的力；
    所述第二组结构在测试挠度下的静电力F2包括了两部分：驱动多晶硅悬臂梁(101)弯曲所需要的力；十字梁(102)扭转所需要的力；
    将F1减去F2即为单独驱动固支梁(103)到达测试挠度所需要的净力。
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