WO2015163535A1 - Masque photographique pour la fabrication d'un conducteur émetteur de lumière ayant un motif à nanostructures et son procédé de fabrication - Google Patents

Masque photographique pour la fabrication d'un conducteur émetteur de lumière ayant un motif à nanostructures et son procédé de fabrication Download PDF

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Publication number
WO2015163535A1
WO2015163535A1 PCT/KR2014/006136 KR2014006136W WO2015163535A1 WO 2015163535 A1 WO2015163535 A1 WO 2015163535A1 KR 2014006136 W KR2014006136 W KR 2014006136W WO 2015163535 A1 WO2015163535 A1 WO 2015163535A1
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Prior art keywords
substrate
light
nanostructure
photomask
light blocking
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PCT/KR2014/006136
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English (en)
Korean (ko)
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정경호
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인트리 주식회사
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Priority to JP2016559285A priority Critical patent/JP6342511B2/ja
Publication of WO2015163535A1 publication Critical patent/WO2015163535A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Definitions

  • the present invention relates to a photomask for manufacturing a transparent conductor and a method of manufacturing the same, and more particularly, to a photomask for manufacturing a transparent conductor having a pattern of nanostructures and a method of manufacturing the same.
  • the transparent conductor refers to a thin conductive film that transmits light in the visible light region and has electrical conductivity at the same time.
  • Light-transmitting conductors are widely used in a variety of electronic devices. For example, light-transmitting conductors are widely used as transparent electrodes in flat panel displays such as liquid crystal displays of flat-panel TVs and desktop PCs, touch panels of tablet PCs and smartphones, and electroluminescent devices.
  • Such light transmissive conductors can be manufactured by various methods.
  • a light-transmitting conductor is manufactured by using a metal oxide such as indium tin oxide in order to have high light transmittance and high conductivity, but the metal oxide has a problem of inferior conductivity as the light transmittance is increased. .
  • a method of dispersing nanostructures such as carbon nanotubes or silver nano-wires in a solution and then applying them to a substrate has been actively studied.
  • this method is limited in lowering the resistance value because the individual nanostructure units forming the transparent electrode are connected in contact with each other, there is a problem that the conductivity is inferior.
  • this method requires a process of dispersing and applying nanostructures every time a transparent conductor is manufactured, and the process is complicated.As the nanostructure pattern is different for each individual transparent conductive conductor, repetitive reproducibility is reduced and reliability is lowered. have.
  • a photomask having a pattern corresponding to the metal mesh pattern is used, and the pattern of the photomask is formed using a laser.
  • a krypton-ion laser or an Nd yag laser is usually used as the laser source.
  • the wavelength of the laser becomes 413 nm or 532 nm. Therefore, when the laser wavelength is used, there is a limit to precise pixel size of the pattern formed on the photomask.
  • the line width is larger than the wavelength because the laser patterns the inclined line by repetition of the vertical line and the horizontal line.
  • An object of the present invention is to provide a photomask and a method for manufacturing the light-transmitting conductor having a nanostructured pattern.
  • the invention according to claim 1 is a photomask, comprising: a light transmissive substrate; And a light shielding layer on the substrate, the light shielding layer comprising a light shielding material for preventing light incident from the outside from passing through the substrate, wherein the light shielding layer corresponds to a nanostructure network formed by arranging the nanostructures to cross each other. It includes a pattern to say.
  • the light shielding layer according to claim 1 has a substantially constant thickness.
  • the light shielding layer according to claim 1 is a single body formed as one unit.
  • the nanostructure according to claim 1 is one selected from the group consisting of nanotubes, nanowires, nanofibers, and mixtures thereof.
  • the pattern according to claim 1 is amorphous.
  • the pattern as set forth in claim 1 comprises: a plurality of body parts having a pattern corresponding to each nanostructure constituting the nanostructure network; A plurality of intersections in which the body portions cross each other; And an intervening portion between the main body portions.
  • the main body parts and the crossing parts according to claim 6 form at least one closed system which is connected to include an intervening part therein.
  • the main body parts and the intersection parts according to claim 6 form at least one open system connected to each other so that the inside and the outside are not distinguished.
  • the edge part of a main body part protrudes in the interposition part of Claim 6. It is characterized by the above-mentioned.
  • the width w of the main body portion according to claim 6 falls within a range of 1 ⁇ 10 2 nm ⁇ w ⁇ 2.5 ⁇ 10 3 nm.
  • intersection portion according to claim 6 has a thickness substantially the same as that of the main body.
  • the main body portion according to claim 6 is formed so that light incident on the substrate from outside does not pass through the substrate, and the interposition portion is formed so that light incident on the substrate from the outside passes through the substrate. do.
  • the main body portion according to claim 6 is formed so that light incident on the substrate passes through the substrate, and the interposition portion is formed so that light incident on the substrate from the outside does not pass through the substrate. It is done.
  • the invention according to claim 16 is a method of manufacturing a photomask, comprising the steps of: (1) applying a light-shielding material on a light transmissive substrate; (2) applying a photosensitive material on the light blocking material; (3) arranging the nanostructures to form a network arranged on the photosensitive material such that the nanostructures cross each other; (4) irradiating light through the nanostructure network to form a shape corresponding to the nanostructure network in the photosensitive material; And (5) forming a light blocking layer by forming a pattern corresponding to the nanostructure network on the light blocking material according to the shape of the photosensitive material.
  • the nanostructure of step (3) according to claim 16 is one selected from the group consisting of nanotubes, nanowires, and mixtures thereof.
  • the invention according to claim 18 is a method of manufacturing a photomask, comprising the steps of: (1) applying a light-shielding material on a light transmissive substrate; (2) arranging the nanostructures to form a network arranged on the light blocking material so that the nanostructures cross each other; And (3) contacting the caustic agent through the nanostructure network to form a pattern corresponding to the nanostructure network on the light shielding material to form a light shielding layer.
  • the nanostructure of step (2) according to claim 18 comprises a nanofiber.
  • the nanostructure of step (2) described in claim 20 includes a nanofiber.
  • the present invention can provide a photomask and a method for manufacturing the light-transmitting conductor having a nanostructured pattern.
  • FIG. 1 is a perspective view schematically showing a photomask as a first embodiment.
  • FIG. 2 is a plan view illustrating a pattern of a light blocking layer in the photomask of FIG. 1.
  • FIG. 3 is a diagram illustrating a part of the pattern of the light blocking layer of FIG. 2.
  • FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3.
  • FIG. 5 is a plan view illustrating a pattern of a light blocking layer in a photomask as Example 2;
  • FIG. 6 is a plan view showing a pattern of a light shielding layer in a photomask as Example 3;
  • FIG. 7 is a perspective view of a fourth mask in which a second light shielding layer is provided in a photomask.
  • Example 8 is a plan view showing a pattern of a light shielding layer in a photomask as Example 5;
  • FIG. 9 is a diagram illustrating a part of a pattern of the light blocking layer of FIG. 8.
  • FIG. 10 is a cross-sectional view taken along the line X-X of FIG. 9.
  • FIG. 11A to 11H illustrate a method of manufacturing a photomask as Example 6.
  • FIG. 11A to 11H illustrate a method of manufacturing a photomask as Example 6.
  • 12A to 12D are diagrams showing a method of manufacturing a photomask as a seventh embodiment.
  • FIG. 13A to 13C illustrate a method of manufacturing a photomask as an eighth embodiment.
  • the photomask 100 includes a substrate 110 and a light blocking layer 120.
  • the photomask 100 refers to the formation of a pattern corresponding to the fine electrode pattern in order to form the fine electrode pattern on the substrate by a photolithography process using an exposure system.
  • the photomask 100 is used to form a fine electrode pattern having a line width corresponding to the line width of the nanostructure.
  • the substrate 110 refers to a light shielding layer 120 coated or laminated thereon.
  • the substrate 110 may be rigid or flexible.
  • the substrate 110 is light transmissive.
  • the substrate 110 is formed of a material such as glass or quartz, but is not limited thereto.
  • the substrate 110 is light transmissive.
  • the substrate 110 may transmit 90% or more of the light irradiated by the exposure system.
  • the light shielding layer 120 is formed on the substrate 110 and refers to a layer that shields light from entering the substrate 110 from the outside so as not to pass through the substrate 110.
  • the light blocking layer 120 may have a substantially constant thickness. As a result, the light passing through the photomask 120 can be precisely controlled to form a precise fine electrode pattern.
  • the light blocking layer 120 preferably has a substantially constant thickness, but is not limited thereto.
  • the light blocking layer 120 may have any thickness.
  • the light shielding layer 120 may also be a unitary body formed as one body, but is not limited thereto.
  • the light shielding layer 120 may not be a unitary body as long as it forms a layer that blocks light.
  • the light blocking layer 120 includes a light blocking material.
  • the light blocking material forming the light blocking layer 120 may include a metal.
  • the light blocking layer 120 may be formed of a metal such as chromium, but is not limited thereto.
  • the light blocking material may be coated on the substrate 110 in various ways.
  • the light blocking material may be coated on the substrate 110 by deposition by sputtering.
  • the light blocking layer 120 may be formed of a chromium deposition film having a thickness of 50nm to 100nm.
  • the light blocking layer 120 includes a pattern corresponding to a network formed by arranging nanostructures to cross each other.
  • the nanostructures may be nanotubes, nanowires, nanofibers, or mixtures thereof. If the nanostructure is included in any material that is included therein.
  • carbon nanotubes, silver nanowires, carbon nanofibers, or the like may be used as the nanostructure.
  • the light blocking layer 120 since the light blocking layer 120 includes a pattern corresponding to the network formed by crossing the nanostructures, the width of the portion corresponding to each nanostructure forming the light blocking layer 120 can be formed to be highly narrow. As a result, it is possible to secure a light blocking property of a very fine nano unit size.
  • the light blocking layer 120 may be formed of a conductive material having high conductivity, and at the same time, may form a fine electrode pattern corresponding to a nanostructure network capable of securing high light transmittance.
  • the pattern corresponding to the network formed by arranging the nanostructures to intersect refers to the pattern formed to correspond to such a network, not the network itself formed by arranging the nanostructures to intersect.
  • This pattern has a plurality of body portions 121, a plurality of intersection portions 122, and interposition portions 123, as illustrated in FIG. 2.
  • the body parts 121 refer to portions corresponding to the nanostructures of the nanostructure network
  • the intersection portions 122 refer to portions where the body portions 121 intersect, and the intervening portion 123 is the body portion 121. Say the part between them.
  • the main body 121 and the intersection portion 122 are elements for preventing the light blocking layer 120 from entering the substrate 110 from the outside to pass through the substrate 110, and the intervening portion 123 may have a light blocking layer (
  • the light incident on the substrate 110 from the outside 120 is an element through which the substrate 110 is transmitted. Therefore, the light irradiated by the exposure system does not transmit the main body portion 121 and the intersection portion 122 of the light shielding layer 120, and the intervening portion 123 of the light shielding layer 120 transmits the light.
  • the photomask 100 having the 120 forms a fine electrode pattern having a pattern corresponding to the body portion 121 and the intersection portion 122 as the positive photomask 100.
  • the body parts 121a, 121b, 121c and 121d and the intersection parts 122a, 122b, 122c and 122d may form a closed system 125 that is connected to include the intervening part 123a therein. .
  • the main body parts 121 are overlapped with each other, thereby improving the reliability of the electrical connection between the micro electrode pattern parts corresponding to the main body part 121, thereby effectively preventing the disconnection of the electric electrode in the manufacturing process or use of the micro electrode pattern. You can do it.
  • the other body parts 121e, 121f, and 121g and the other intersection parts 122e and 122f may form an open system 126 connected to each other so that the inside and the outside are not distinguished from each other.
  • the intervening part 123 may be divided into a closed system intervening part 123a formed by the closed system 125 and an open system intervening part 123b formed by the open system 126.
  • the closed system 125 and the open system 126 may be located separately from each other or may be adjacent to each other.
  • the open system 126 may be located inside the closed system 125, or conversely, the closed system 125 may be located within the open system 126.
  • the body portion 121 formed using the network formed by such nanostructures may have an end portion 124.
  • the end 124 of the main body 121 may protrude to the closed system intervening part 123a or the open system intervening part 123b.
  • the width w 1 of the main body 121 may be variously formed according to what forms a network of nanostructures, as illustrated in FIG. 3.
  • the width w 1 of the body portion may mean an actual width of the body portion 121 or an average thereof.
  • the length w 1 of the body portion 121 may be formed differently according to the case of using a nanotube, nanowire, or nanofiber as a nanostructure constituting the nanostructure network. have.
  • the width w 1 of the main body portion 121 may be variously formed.
  • the body portion 121 width w 1 may be in a range of 1 ⁇ 10 2 nm ⁇ w 1 ⁇ 2.5 ⁇ 10 3 nm.
  • the thickness of the body portion 121 may be 50nm to 100nm.
  • the length d 1 of the main body 121 may be formed in various ways depending on what forms a network of nanostructures.
  • the length d 1 of the main body 121 may mean an actual length of the main body 121 or an average thereof.
  • the length d 1 of the main body portion 121 is the length of the main body portion 121 depending on the use of nanotubes, nanowires, or nanofibers as the nanostructures constituting the nanostructure network.
  • the length d 1 may be formed differently.
  • the length d 1 of the main body portion 121 may be variously formed.
  • the length d 1 of the body portion 121 may be related to the width w 1 of the body portion depending on what forms the network of nanostructures. For example, when the main body portion 121 is formed by forming a nanostructure network using nanowires, when the width of the main body portion 121 is w 1 and the length of the main body portion 121 is d 1 , 1 ⁇ 10 2 ⁇ d It may fall in the range of 1 / w 1 ⁇ 3x10 3 .
  • the nanostructure network is formed of nanofibers to form the body portion 121
  • the width of the body portion 121 is w 1 and the length of the body portion 121 is d 1 , 1 ⁇ 10 2 ⁇ d 1 / w 1 ⁇ 5x10 6 .
  • the relationship between the width and the length of the body portion 121 may be substantially determined by the aspect ratio A (ie, the ratio of the length of the nanostructure divided by the average diameter of the nanostructure) of the nanostructures constituting the nanostructure network.
  • the aspect ratio A of the nanostructure when using nanowires as a nanostructure constituting the nanostructure network, the aspect ratio A of the nanostructure may be 1x10 2 ⁇ A ⁇ 3x10 3 , and when using the nanofiber as the nanostructure, the aspect ratio A of the nanostructure is 1x10 2 ⁇ It may be A.
  • the relationship between the width and the length of the main body 121 is not limited thereto.
  • intersection portion 122 may have a thickness substantially the same as that of the main body portion 121, as exemplarily illustrated in FIGS. 3 and 4.
  • the pattern of the light shielding layer 120 may be formed as a single body, and the pattern of the microelectrode portion corresponding to the intersection portion 122 may be formed to have the same thickness as the pattern of the microelectrode portion corresponding to the body portion 121. In this way, it is possible to prevent an increase in resistance in the pattern of the fine electrode portion corresponding to the intersection portion 122.
  • the size and shape of the region of the intervening portion 123 may be variously formed.
  • the size and shape of the area of the intervening portion 123 may be determined by the distance between the main body portions 121.
  • the size of the region of the intervening portion 123 may be adjusted according to how the nanostructure network is configured, and the nanostructure network may be configured to correspond to the opening ratio of the fine electrode pattern to be formed by the photomask 100. have.
  • the pattern of the light blocking layer 120 may be amorphous. As described above, when the microelectrode pattern is formed using the light blocking layer 120 having the amorphous pattern, an amorphous microelectrode pattern may be formed, and thus a moire phenomenon in which stripes are visible due to repetition of the standardized microelectrode pattern is formed. Can be prevented.
  • the pattern of the light shielding layer is not limited to amorphous and may be any type as long as it includes a pattern corresponding to a network formed by crossing nanostructures.
  • the light blocking layer 220 formed on the substrate 210 of the photomask 200 may have a pattern corresponding to a network formed by crossing nanostructures. Although provided with a pattern including the main body portion 221 and the intersection portion 222, the main body portion 221 is continuously extended from one edge of the light shielding layer 220 to the other edge, so that the main body portion 221 in the pattern End) is not present.
  • the reliability of connection of the light shielding layer 220 by the main body 221 and the crossing portion 222 can be more surely ensured, and the disconnection part such as the end of the main body 221 does not exist. It is possible to ensure the reliability of the connection of the fine electrode pattern corresponding to 220 and to prevent the electrostatic phenomenon at the end.
  • the light shielding layer 220 pattern of this embodiment can be formed very easily by using nanofibers having a very high aspect ratio as a nanostructure.
  • the light blocking layer 320 formed on the substrate 310 of the photomask 300 has a pattern corresponding to a network formed by crossing nanostructures.
  • the main body portion 321, the crossing portion 322, and the end portion 324 of the main body portion 321 are provided, but the main body portion 321 extends continuously from one edge of the light shielding layer 320 to the other edge.
  • the body parts 321a, 321b, and 321c and the intersections 322a and 322b may form an open system 326 that is connected so that the inside and the outside are not distinguished, but intersect with the body parts 321.
  • the portions 322 are characterized in that they do not form a closed system that is connected to include the intervening portion 323 therein.
  • the light shielding layer 320 pattern of the present exemplary embodiment may be easily formed by using nanotubes or nanowires having a smaller aspect ratio than nanofibers as nanostructures.
  • a light shielding layer 430 is further provided.
  • the terminal part blocking layer 430 includes a light blocking material that prevents light incident from the outside into the substrate 410 from passing through the substrate 410 and includes a pattern corresponding to the terminal part pattern.
  • the photomask 400 may simultaneously form the fine electrode pattern formed by the light blocking layer 420 and the terminal part pattern formed by the terminal part light blocking layer 430.
  • the pattern of the terminal light blocking layer 430 includes a plurality of body parts 431 respectively connected to the plurality of light blocking parts 427 of the light blocking layer 420, and a second interposition part 433 therebetween.
  • the plurality of connection parts 432 are connected to the plurality of light blocking parts 427.
  • the light shielding layer formed on the substrate 510 of the photomask 500 may have a pattern corresponding to a network formed by crossing nanostructures. Equipped.
  • This pattern has a plurality of body portions 521, a plurality of intersections 522, and intervening portions 523.
  • the body portions 521 are portions corresponding to the nanostructures of the nanostructure network
  • the intersection portions 522 are portions where the body portions 521 intersect
  • the intervening portion 523 is between the body portions 521. Is part of.
  • the body portion 521 and the intersection portion 522 are formed so that light incident on the substrate 510 from the outside passes through the substrate 510, and the intervening portion 523 is incident on the substrate 510 from the outside.
  • the photomask 500 including the light blocking layer forms a fine electrode pattern having a pattern corresponding to the main body portion 521 and the intersection portion 522 as the negative photomask 500.
  • the body parts 521a, 521b, 521c, and 521d and the crossing parts 522a, 522b, 522c, and 522d may form a closed system 525 connected to include the intervening part 523a therein.
  • the other body parts 521e, 521f, and 521g and the other crossing parts 522e and 522f may form an open system 526 connected to each other so that the inside and the outside are not distinguished from each other.
  • the intervening part 523 may be divided into a closed system intervening part 523a formed by the closed system 525 and an open system intervening part 523b formed by the open system 526.
  • the closed system 525 and the open system 526 may be located separately from each other or may be adjacent to each other.
  • the open system 526 may be located inside the closed system 525, or conversely, the closed system 525 may be located within the open system 526.
  • the width w 2 of the body portion 521 may be variously formed according to what forms a network of nanostructures, as illustrated in FIG. 9.
  • the width w 2 of the body portion may mean an actual width of the body portion 521 or an average thereof.
  • the length w 2 of the body portion 521 may be formed differently depending on the case of using nanotubes, nanowires, or nanofibers as nanostructures constituting the nanostructure network. have.
  • the width w 2 of the body portion 521 may be variously formed.
  • the body portion 521 width w 2 may be in the range of 1 ⁇ 10 2 nm ⁇ w 2 ⁇ 2.5 ⁇ 10 3 nm.
  • the thickness of the body portion 521 may be 50 nm to 100 nm.
  • the length d 2 of the main body 521 may be formed in various ways depending on what forms a network of nanostructures.
  • the length d 2 of the main body 521 may mean an actual length of the main body 521 or an average thereof.
  • the length d 2 of the body portion 521 may be formed differently according to the case of using nanotubes, nanowires, or nanofibers as nanostructures constituting the nanostructure network. have.
  • the length d 2 of the body portion 521 may be variously formed.
  • the length d 2 of the body portion 521 may be related to the width w 2 of the body portion, depending on what forms the network of nanostructures.
  • the nanostructure network is formed by using nanowires to form the body portion 521
  • the width of the body portion 521 is w 2 and the length of the body portion 521 is d 2
  • 1 ⁇ 10 2 ⁇ d 2 / w 2 ⁇ 3x10 3 It can fall.
  • the nanostructure network is formed of nanofibers to form the main body portion 521
  • the width of the main body portion 521 is w 2 and the length of the main body portion 521 is d 2
  • 1 ⁇ 10 2 ⁇ d 2 / w 2 ⁇ 5x10 6 is 1 ⁇ 10 2 ⁇ d 2 / w 2 ⁇ 5x10 6 .
  • the relationship between the width and the length of the body portion 521 may be substantially determined by the aspect ratio A (ie, the ratio of the length of the nanostructure divided by the average diameter of the nanostructure) of the nanostructures constituting the nanostructure network.
  • the aspect ratio A of the nanostructure when using nanowires as a nanostructure constituting the nanostructure network, the aspect ratio A of the nanostructure may be 1x10 2 ⁇ A ⁇ 3x10 3 , and when using the nanofiber as the nanostructure, the aspect ratio A of the nanostructure is 1x10 2 ⁇ It may be A.
  • the relationship between the width and the length of the body portion 521 is not limited thereto.
  • a method of manufacturing a positive photomask using a photosensitive material is shown, as exemplarily shown in Figs. 11A to 11H.
  • the light-shielding material 620 is applied onto the light transmissive substrate 610 (FIG. 11A).
  • the light blocking material 620 may be a metal having good light blocking properties such as chromium. Coating the light blocking material 620 on the substrate 620 may be performed by various methods such as spin coating, plating, and deposition.
  • the photosensitive material 630 is coated on the light blocking material 620 (FIG. 11B).
  • the photosensitive material 630 may include various materials having photosensitivity including a photosensitive polymer. Coating the photosensitive material 630 on the light blocking material 620 may be performed by various methods such as a printing method.
  • the nanostructures are arranged to form a network 640 arranged on the top surface of the nanostructures to intersect (FIG. 11C).
  • the nanostructure nanotubes, nanowires, nanofibers, or mixtures thereof may be used.
  • the nanostructure network 640 is used to form a shape corresponding to the nanostructure network 640 in the photosensitive material 630 (FIG. 11D).
  • the photosensitive material 630 may be exposed to the light source 650 through the nanostructure network 640 to form a shape corresponding to the nanostructure network 640 in the photosensitive material 630.
  • the developer is sprayed into a device such as the nozzle 660 to develop the photosensitive material 630 to form a shape corresponding to the nanostructure network 640 (FIG. 11E).
  • a pattern corresponding to the nanostructure network 640 by spraying the etching solution onto a device such as a nozzle 670 above the photosensitive material 630 developed to have a shape corresponding to the nanostructure network 640. It is etched to have (FIG. 11F).
  • the pattern may be an amorphous pattern corresponding to the nanostructure network 640.
  • the photosensitive material 630 remaining on the top surface of the light blocking material 620 having a pattern corresponding to the nanostructure network 640 is peeled off using a device such as a nozzle 680 (FIG. 11G).
  • a device such as a nozzle 680
  • the photomask 600 having the light blocking layer 650 formed on the substrate 610 is completed (FIG. 11H).
  • the method may further include forming a terminal part light blocking layer (not shown) connected to the light blocking layer 650 on the substrate 610, for example, on the substrate 610 corresponding to the outside of the edge of the light blocking layer 650. can do.
  • the terminal blocking layer is a portion corresponding to the terminal portion pattern connected to the fine electrode pattern when the microelectrode pattern is formed using the photomask 600.
  • a method of manufacturing a positive photomask without using a photosensitive material is shown, as exemplarily shown in Figs. 12A to 12D.
  • a light blocking material 720 is coated on the light transmissive substrate 710 (12a).
  • the light blocking material 720 uses a material that can block light from the exposure system, such as chromium.
  • Application of the light blocking material 720 may be performed by various methods such as spin coating, printing, and deposition.
  • the nanostructures are arranged to form a network 730 arranged so that the nanostructures intersect on the light blocking material 720 (FIG. 12B).
  • the nanostructure any one of nanotubes, nanowires, nanofibers, or a mixture thereof is used. In consideration of not using a photosensitive material, it is preferable to use nanofibers as nanostructures.
  • the nanofibers When using nanofibers as nanostructures, the nanofibers may be subjected to a reflow process so that the nanofibers are stably arranged on the light blocking material 720. Thereafter, the caustic is contacted through the nanostructure network 730 to form a pattern corresponding to the nanostructure network 730 in the light blocking material 720 (FIG. 12C). The caustic is sprayed onto the substrate 710 over the nanostructure network 730 with the injector 770. After the pattern corresponding to the nanostructure network 730 is formed on the light blocking material 720, the light blocking layer 740 is formed by peeling the nanostructure network 730 to complete the positive photomask 700 (FIG. 12d).
  • a method of manufacturing a negative photomask without using a photosensitive material is shown, as exemplarily shown in Figs. 13A to 13C.
  • the nanostructures are arranged on the light transmissive substrate 810 so as to form a network 820 in which the nanostructures intersect each other (FIG. 13A).
  • the nanostructure any one of nanotubes, nanowires, nanofibers, or a mixture thereof is used. In consideration of not using a photosensitive material, it is preferable to use nanofibers as nanostructures.
  • the nanofibers may be subjected to a reflow process so that the nanofibers are stably arranged on the substrate 810.
  • a light blocking material 830 is coated on the substrate 810 to cover the nanostructure network 820 (FIG. 13B).
  • the light blocking material 830 uses a material that can block light from the exposure system, such as chromium. Application of the light blocking material 830 may be performed by various methods such as spin coating, printing, and deposition. Thereafter, the nanostructure network 820 is separated from the substrate 810 to form a pattern having an opening corresponding to the nanostructure network 820 to form the light blocking layer 840 (FIG. 13C). As a result, the negative photomask 800 is completed.
  • the present invention can be used in a field to which a photomask for manufacturing a light-transmissive conductor and a method of manufacturing the same are applied.

Abstract

La présente invention concerne un masque photographique et son procédé de fabrication. Le masque photographique comprend : un substrat émetteur de lumière ; et une couche faisant écran à la lumière sur le substrat. La couche faisant écran à la lumière comprend un matériau faisant écran à la lumière qui empêche la lumière qui est incidente sur le substrat à partir de l'extérieur de traverser le substrat et la couche faisant écran à la lumière comprend un motif correspondant à un réseau à nanostructures formé en disposant des nanostructures de sorte qu'elles s'entrecoupent les unes les autres.
PCT/KR2014/006136 2014-04-22 2014-07-09 Masque photographique pour la fabrication d'un conducteur émetteur de lumière ayant un motif à nanostructures et son procédé de fabrication WO2015163535A1 (fr)

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JP2016559285A JP6342511B2 (ja) 2014-04-22 2014-07-09 ナノ構造のパターンを備えた光透過性導電体を製造するためのフォトマスク及びその製造方法

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